JP2008053679A - Substrate cleaning device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate cleaning apparatus with improved productivity.
SOLUTION: A gas and a chemical liquid are mixed to form a mist, and an injection nozzle that injects the mist onto a substrate, a chemical liquid supply part that supplies the chemical liquid to the injection nozzle, a gas supply part that supplies a gas to the injection nozzle, and a gas supply A substrate cleaning apparatus including a heating unit that is connected to the unit and raises the temperature of the gas.
[Selection] Figure 3

Description

  The present invention relates to a substrate cleaning apparatus, and more particularly to a substrate cleaning apparatus with improved productivity.

  A wafer used as a substrate of a semiconductor memory element, a flat plate substrate used as a liquid crystal display, or a plasma display panel is manufactured as a memory element or a display element through various processes for forming a thin film and a metal film. Each of these processes is performed in a process chamber that provides an environment isolated from the outside. That is, in the process chamber, a coating process, an exposure process, a development process, an etching process, a cleaning process, a strip process, and the like for manufacturing a memory element and a display element may proceed.

  The cleaning process is a process of removing contaminants adsorbed on the surface of ELD, LCD, PDP and FPD after treating various chemicals (chemical solutions), etc., and the removal of contaminants supplies water or cleaning liquid, The process can proceed by removing contaminants adsorbed on the substrate surface using a brush or the like.

  FIG. 1 is a schematic view showing a conventional substrate cleaning apparatus, and FIG. 2 is a schematic view showing a part of the conventional substrate cleaning apparatus.

  Referring to FIGS. 1 and 2, the substrate cleaning apparatus includes an injection nozzle 110, a chemical solution supply unit 120, and a gas supply unit 130.

  The injection nozzle 110 mixes a gas and a chemical solution to form a mist, and injects the mist onto the substrate P. The chemical supply unit 120 supplies a chemical solution to the injection nozzle 110, and the gas supply unit 130 supplies a gas to the injection nozzle 110.

  At this time, the chemical solution is heated by the heating unit 140 and supplied to the injection nozzle 110 via the chemical solution supply line 150. That is, the spray nozzle 110 is supplied with and mixed with a high-temperature chemical solution and a normal-temperature gas to form mist. The mist thus formed is supplied onto the substrate P to clean the surface of the substrate P.

  In order to supply a high-temperature chemical solution, the chemical solution is heated by the heating unit 140. At this time, a large amount of energy is consumed to heat the liquid chemical solution, and a long time is required. That is, a large amount of energy is consumed to heat the chemical solution, and a lot of time is consumed, thereby reducing productivity.

  An object of the present invention is to provide a substrate cleaning apparatus with improved productivity.

  The present invention is not limited to the above-mentioned objects, and further objects not mentioned can be clearly understood by those skilled in the art from the following.

  In order to solve the above problems, a substrate cleaning apparatus according to an embodiment of the present invention forms a mist by mixing a gas and a chemical solution, and injects the mist onto the substrate P, and supplies the chemical solution to the injection nozzle. And a heating unit that is connected to the gas supply unit and raises the temperature of the gas.

  The substrate cleaning apparatus according to the embodiment of the present invention has one or more of the following effects.

  First, by forming a high temperature mist in a short time using a small amount of energy, the cost can be reduced and the productivity can be improved.

  Second, the cleaning power of the substrate can be enhanced by forming the high-temperature mist and cleaning the substrate.

  In addition, the specific matter of embodiment is contained in detailed description and drawing.

  Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and can be embodied in various different forms. The present embodiments merely complete the disclosure of the present invention, and are ordinary in the technical field to which the present invention belongs. It is provided to provide those skilled in the art with a full understanding of the scope of the invention and is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

  Also, as used herein, “and / or” includes each and every combination of one or more of the items mentioned.

  The terminology used herein is for the purpose of describing embodiments and is not intended to limit the invention. In this specification, the singular includes the plural unless specifically stated otherwise. Also, as used herein, “comprises” and / or “comprising” means that the referenced component, stage, operation, and / or element is one or more other component, stage, operation, and / or Elements can be added.

  Hereinafter, a substrate cleaning apparatus according to an embodiment of the present invention will be described in more detail with reference to FIGS. 3 and 4.

  FIG. 3 schematically illustrates a substrate cleaning apparatus according to an embodiment of the present invention, and FIG. 4 schematically illustrates a part of the substrate cleaning apparatus according to an embodiment of the present invention.

  Referring to FIGS. 3 and 4, the substrate cleaning apparatus according to an exemplary embodiment of the present invention includes an injection nozzle 210, a chemical solution supply unit 220, a gas supply unit 230, and a heating unit 240.

  The injection nozzle 210 mixes a gas and a chemical solution to form a mist, and injects the mist onto the substrate P. The injection nozzle 210 may include a gas supply port to which gas is supplied, a chemical solution supply port to which a chemical solution is supplied, and an injection port to inject mist formed therein.

  The chemical liquid supply unit 220 may supply the chemical liquid to the injection nozzle 210 and may be connected to a high pressure pump to supply the chemical liquid to the injection nozzle 210 at a high pressure. At this time, the chemical solution may be pure water (DI), for example.

The gas supply unit 230 supplies gas to the injection nozzle 210, and the gas supplied at this time may be N ₂ , for example. When supplying gas to the injection nozzle 210, the gas is heated to a high temperature by passing through the heating unit 240, and the high temperature gas is supplied. For example, the gas can be heated to a high temperature while passing the gas supply line 250 through the heating unit 240. Further, the gas supplied to the injection nozzle 210 can be compressed and supplied at a high pressure. The temperature of the gas supplied at this time can be controlled by the control unit 260 in consideration of the temperature of the mist formed by mixing with the chemical solution.

  Here, as the heat generating means of the heating unit 240, for example, Joule heat generated by passing a current through a resistance wire or the like can be directly used, or heat generated by visible light or infrared light can be used. Alternatively, arc heat generated by discharge can be used, or a high-frequency electromagnetic field can be used. The temperature can also be raised while compressing the gas supplied from the gas supply unit 230 to a high pressure.

  Hereinafter, the cleaning process of the substrate cleaning apparatus according to the embodiment of the present invention will be described with reference to FIGS.

  The substrate P is loaded in the process chamber, and preparations are made to proceed with the cleaning process. Next, the chemical solution and the gas are supplied from the chemical solution supply unit 220 and the gas supply unit 230 to the injection nozzle 210. At this time, the flow rate of the chemical solution and gas supplied to the injection nozzle 210 can be controlled by the control unit 260. Further, the chemical solution can be supplied at a high pressure via a high-pressure pump, and the gas can be supplied after being compressed to a high pressure.

  On the other hand, the gas is heated and supplied at a high temperature by the heating unit 240, but the heating unit 240 directly uses Joule heat generated by passing a current through a resistance wire or the like, or generates heat by visible light or infrared rays. Can do. Alternatively, arc heat generated by discharge can be used, or a high-frequency electromagnetic field can be used. On the other hand, the temperature can be raised while compressing the gas supplied from the gas supply unit 230 to a high pressure.

  When the high temperature gas and the chemical liquid are supplied to the injection nozzle 210, the injection nozzle 210 mixes the high temperature gas and the chemical liquid to form a mist and injects it onto the substrate P. At this time, the spray nozzle 210 can adjust the mist to a desired size. The temperature of the mist formed by mixing the high temperature gas and the chemical solution at the injection nozzle 210 is higher than the normal temperature.

  The high temperature mist supplied from the injection nozzle 210 comes into contact with the substrate P, and the surface of the substrate P is physically cleaned by the striking force of the mist. At this time, since the mist maintains a temperature higher than normal temperature, a higher cleaning effect appears than that for supplying mist at normal temperature.

  According to the substrate cleaning apparatus according to the embodiment of the present invention, a high temperature mist is formed by supplying a normal temperature chemical solution and a high temperature gas. At this time, since the gas is heated and supplied, less energy is consumed than when the chemical is heated and supplied at a high temperature. Further, the time taken to heat the gas is less than the time taken to heat the chemical solution. Therefore, high temperature mist can be formed using less time with less energy. Thereby, cost can be reduced and productivity can be improved. Further, by cleaning the substrate P by forming a high temperature mist, the cleaning power of the substrate P can be increased as compared with the case where the normal temperature mist is used.

  As described above, the embodiments of the present invention have been described with reference to the accompanying drawings. However, those who have ordinary knowledge in the technical field to which the present invention pertains do not change the technical idea or essential features of the present invention. It can be understood that it can be implemented in other specific forms. Accordingly, it should be understood that the above-described embodiments are illustrative in all aspects and not limiting.

1 is a diagram schematically illustrating a conventional substrate cleaning apparatus. 1 is a schematic view illustrating a part of a conventional substrate cleaning apparatus. 1 is a schematic view illustrating a substrate cleaning apparatus according to an embodiment of the present invention. 1 is a schematic view illustrating a part of a substrate cleaning apparatus according to an embodiment of the present invention.

Explanation of symbols

P substrate 210 injection nozzle 220 chemical supply unit 230 gas supply unit 240 heating unit 250 gas supply line 260 control unit

Claims (6)

An injection nozzle that mixes a gas and a chemical solution to form a mist and injects the mist onto a substrate;
A chemical supply section for supplying a chemical to the spray nozzle;
A gas supply unit for supplying gas to the injection nozzle;
And a heating unit that is connected to the gas supply unit and raises the temperature of the gas.   The substrate cleaning apparatus according to claim 1, further comprising a temperature control unit that controls a temperature of the heating unit.   The substrate cleaning apparatus according to claim 1, further comprising a high-pressure pump that is connected to the chemical solution supply unit and supplies the chemical solution to the injection nozzle at a high pressure.   The substrate cleaning apparatus according to claim 1, wherein the spray nozzle mixes a chemical solution and a high-temperature gas.   The substrate cleaning apparatus according to claim 1, wherein the chemical solution is pure water (DI). The substrate cleaning apparatus according to claim 1, wherein the gas is N ₂ .

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