JP2008050667A

JP2008050667A - Thin film forming equipment

Info

Publication number: JP2008050667A
Application number: JP2006229552A
Authority: JP
Inventors: Masao Izumo; 正雄出雲
Original assignee: Mitsubishi Electric Corp
Current assignee: Mitsubishi Electric Corp
Priority date: 2006-08-25
Filing date: 2006-08-25
Publication date: 2008-03-06

Abstract

【課題】従来の電子ビ−ム加熱方式を採用した薄膜形成装置は、単に金属試料に電子ビ−ムを照射するだけであったので、金属試料表面に照射した電子ビ−ムの多くが反射電子となってルツボ外に放射され、試料に対する過熱効率が低いものになっていた。
【解決手段】本発明の薄膜形成装置は、電子ビ−ムを照射する第１試料を収めた第１ルツボから放射される反射電子を第２ルツボ内に収めた第２試料に直接照射することにより、試料の過熱効率を改善したものである。
【選択図】図２
PROBLEM TO BE SOLVED: To irradiate most of an electron beam irradiated on a metal sample surface because a thin film forming apparatus adopting a conventional electron beam heating method merely irradiates a metal sample with an electron beam. The electrons were emitted outside the crucible, and the overheating efficiency of the sample was low.
A thin film forming apparatus of the present invention directly irradiates a second sample housed in a second crucible with reflected electrons radiated from a first crucible containing a first sample to be irradiated with an electron beam. This improves the overheating efficiency of the sample.
[Selection] Figure 2

Description

本発明は電子ビ−ム加熱方式を採用した薄膜形成装置に関するものである。 The present invention relates to a thin film forming apparatus employing an electron beam heating method.

電子ビ−ム加熱方式を採用した薄膜形成装置は、真空チャンバ−内に設けられる電子銃から放射する電子ビ−ムを試料ホルダ−内の試料に照射し、加熱気化した試料を前記試料ホルダ−と対向する位置に配置した基板上に蒸着し、薄膜形成するものである。 A thin film forming apparatus employing an electron beam heating method irradiates a sample in a sample holder with an electron beam radiated from an electron gun provided in a vacuum chamber, and heats and vaporizes the sample in the sample holder. Are deposited on a substrate disposed at a position opposite to, to form a thin film.

通常、金属試料に照射される電子ビ−ムの数割は、試料表面で反射され反射電子となって加熱に寄与することなく試料ホルダ−外に放出される。したがって、金属試料に照射される電子ビ−ムの一部（試料ホルダ−外に放出される反射電子）は試料加熱に寄与せず、薄膜形成装置のエネルギ−利用効率が低下する。 Usually, a few percent of the electron beams irradiated on the metal sample are reflected from the sample surface and become reflected electrons, which are emitted outside the sample holder without contributing to heating. Therefore, a part of the electron beam irradiated to the metal sample (reflected electrons emitted to the outside of the sample holder) does not contribute to the sample heating, and the energy utilization efficiency of the thin film forming apparatus decreases.

従来のエネルギ−効率を改善した薄膜形成装置においては、試料表面から試料ホルダ−外に放出される反射電子に対して、試料ホルダ−外に設けた凹面反射板を用いて集光し、再度試料ホルダ−内に収められる試料表面に向けて照射するようにしている（例えば、特許文献１）。 In a conventional thin film forming apparatus with improved energy efficiency, reflected electrons emitted from the sample surface to the outside of the sample holder are condensed using a concave reflecting plate provided outside the sample holder, and again the sample. Irradiation is performed toward the surface of the sample stored in the holder (for example, Patent Document 1).

特開平５−１２５５２４号公報（段落００１１、図１）Japanese Patent Laid-Open No. 5-125524 (paragraph 0011, FIG. 1)

従来のエネルギ−効率を改善した薄膜形成装置においては、凹面反射板に集光された反射電子の多くが凹面反射板自体に吸収され、残りの一部が再度試料ホルダ−内の試料に向けて反射されるため、反射電子の利用効率が必ずしも高く無かった。また、凹面反射板からの反射電子が再度試料に照射され、そこでさらに反射された反射電子が電子銃に向け照射されるため、電子銃に損傷を与えていた。 In the conventional thin film forming apparatus with improved energy efficiency, most of the reflected electrons collected on the concave reflecting plate are absorbed by the concave reflecting plate itself, and the remaining part is directed again to the sample in the sample holder. Since it is reflected, the utilization efficiency of the reflected electrons is not necessarily high. Further, the reflected electrons from the concave reflecting plate are irradiated again on the sample, and the reflected electrons reflected there are further irradiated toward the electron gun, so that the electron gun is damaged.

本発明は前記のような課題を解決し、試料表面からの反射電子の利用効率を上げることにより、エネルギ−効率の高い薄膜形成装置を得ることを目的とする。 An object of the present invention is to solve the above-mentioned problems and to obtain a thin film forming apparatus with high energy efficiency by increasing the utilization efficiency of reflected electrons from the sample surface.

本発明の薄膜形成装置は、電子ビ−ムを第１試料ホルダ−内に照射する電子ビ−ム照射部、前記第１ホルダ−内から放出される前記電子ビ−ムの反射電子を第２試料ホルダ−内に照射する反射電子照射部とを備えた点を特徴とするものである。 The thin film forming apparatus of the present invention includes an electron beam irradiating unit that irradiates an electron beam into a first sample holder, and second reflected electrons of the electron beam emitted from the first holder. The present invention is characterized in that it includes a backscattered electron irradiation unit that irradiates the sample holder.

上記のように構成された本発明の薄膜形成装置によれば、電子ビ−ム照射部により第１試料ホルダ−内に収められた第１試料に電子ビ−ムが照射され、前記第１試料上で反射され、第１試料ホルダ−内から放出される前記電子ビ−ムの反射電子を反射電子照射部により、直接第２試料ホルダ−内に収められた第２試料に照射するので、反射電子のもつエネルギ−の利用効率が上がり、エネルギ−効率の高い薄膜形成装置が得られる。 According to the thin film forming apparatus of the present invention configured as described above, an electron beam is irradiated onto the first sample stored in the first sample holder by the electron beam irradiation unit, and the first sample is irradiated. Since the reflected electrons of the electron beam reflected from above and emitted from the first sample holder are directly irradiated to the second sample stored in the second sample holder by the reflected electron irradiation unit, reflection is performed. The use efficiency of energy of electrons is increased, and a thin film forming apparatus with high energy efficiency can be obtained.

実施の形態１．
以下、図面に基づいて本発明の実施の形態１について詳細に説明する。図１は本発明の薄膜形成装置の主たる構成を示す構成図、図２は本発明の薄膜形成装置のチャンバ−内に配置された試料ホルダ−の周辺と電子銃の位置関係について示す斜視図、図３は図２に対応する上面図である。なお、図１ないし図３中、同一部分ないし相当部分には同一符号を付与している。 Embodiment 1 FIG.
Hereinafter, Embodiment 1 of the present invention will be described in detail with reference to the drawings. FIG. 1 is a configuration diagram showing a main configuration of a thin film forming apparatus of the present invention, FIG. 2 is a perspective view showing a positional relationship between a periphery of a sample holder arranged in a chamber of the thin film forming apparatus of the present invention and an electron gun. FIG. 3 is a top view corresponding to FIG. 1 to 3, the same reference numerals are given to the same or corresponding parts.

図１に示すように、本発明の薄膜形成装置１は真空チャンバ−１０の内側に第１、第２、第３試料２１、２２、２３を収めることのできる例えばセラミック製のルツボ等からなる第１、第２、第３試料ホルダ−３１、３２、３３を備えた回転保持具である例えば回転保持盤４０と、各試料に第１電子ビ−ム１０１を照射できる第１電子銃５１と、薄膜形成を行う基板６０とを備え、さらに真空チャンバ−１０の外側に真空チャンバ−１０内のガスを真空排気するための真空ポンプ７０を備えた装置である。なお、本発明の薄膜形成装置１のチャンバ−内に配置する試料ホルダ−の数は、３個にする必要性はなく２個以上であればよい。また、試料ホルダ−は必ずしもセラミック製である必要性は無く、溶融した試料を保持できるものであればよい。つぎに真空ポンプ７０を駆動することにより真空チャンバ−１０内を真空にした後、各試料に対して第１電子銃５１から放射される第１電子ビ−ム１０１を用いて加熱する様子について説明する。 As shown in FIG. 1, a thin film forming apparatus 1 according to the present invention includes a first crucible made of, for example, ceramic that can contain first, second, and third samples 21, 22, and 23 inside a vacuum chamber 10. For example, a rotary holding plate 40 that is a rotary holder provided with the first, second, and third sample holders 31, 32, and 33, a first electron gun 51 that can irradiate each sample with the first electron beam 101, And a vacuum pump 70 for evacuating the gas in the vacuum chamber 10 outside the vacuum chamber 10. Note that the number of sample holders arranged in the chamber of the thin film forming apparatus 1 of the present invention does not need to be three, but may be two or more. Further, the sample holder is not necessarily made of ceramic and may be any one that can hold a molten sample. Next, after the vacuum chamber 10 is evacuated by driving the vacuum pump 70, each sample is heated using the first electron beam 101 emitted from the first electron gun 51. To do.

図２、図３に示すように真空チャンバ−１０内の回転保持盤４０には、第１、第２、第３試料２１、２２、２３をそれぞれ収めた第１、第２、第３試料ホルダ−３１、３２、３３が、回転保持盤４０の回転中心の周りに概ね１２０度ごとに配置されている。また、真空チャンバ−１０内には、第２反射電子１２１に対して概ね３０度の角度で反射電子を吸収し冷却するための第１水冷板８１が配置されている。回転保持盤４０を回転させることにより、第１電子銃５１、第１水冷板８１及び第１、第２試料ホルダ−３１、３２がそれぞれ同一の直線上に並ぶように配置させ、回転を停止する。なお、同一の直線上に第１電子銃５１と第１試料ホルダ−３１および第２試料ホルダ−３２を配置させたのは、後述の通り高速の第１電子ビ−ム１１１やビ−ム状・高速の第１反射電子１１１の進行方向を偏向により変え、第１試料ホルダ−３１内および第２試料ホルダ−３２内に容易に照射できるようにするためである。 As shown in FIGS. 2 and 3, the rotary holding plate 40 in the vacuum chamber 10 has first, second, and third sample holders containing the first, second, and third samples 21, 22, and 23, respectively. -31, 32, and 33 are arranged around the rotation center of the rotation holding plate 40 approximately every 120 degrees. A first water cooling plate 81 for absorbing and cooling the reflected electrons at an angle of approximately 30 degrees with respect to the second reflected electrons 121 is disposed in the vacuum chamber 10. By rotating the rotary holding plate 40, the first electron gun 51, the first water cooling plate 81, and the first and second sample holders 31 and 32 are arranged on the same straight line, and the rotation is stopped. . Note that the first electron gun 51, the first sample holder 31 and the second sample holder 32 are arranged on the same straight line, as described later. This is because the traveling direction of the high-speed first reflected electrons 111 is changed by deflection so that the first sample holder 31 and the second sample holder 32 can be easily irradiated.

電子ビ−ム照射部を構成する第１電子銃５１への通電により、第１電子銃５１から第１試料２１の表面に向けて第１電子ビ−ム１０１が照射され、第１試料２１を加熱する。なお、必要に応じて電子ビ−ム照射部には、さらに真空チャンバ−１０内に図示しないポ−ルピ−スを設け、そのポ−ルピ−スの電磁気力の制御により第１電子ビ−ム１０１を加速したり、偏向したり、集光したりできるようにしておいてもよい。第１試料２１の表面に照射された第１電子ビ−ム１０１は、試料に１００％吸収されることはなく、反射電子、２次電子、特性Ｘ線、オ−ジェ電子などを周辺に反射したり放出したりする。これらのうち、２次電子、特性Ｘ線、オ−ジェ電子などはエネルギ−的あるいは発生確率的に僅かなものであるため、その影響は無視できる。しかし、反射電子の数は多く、また、各反射電子の持つエネルギ−は照射時の各入射電子のもつエネルギ−と同等の高運動エネルギ−を有するため、試料ホルダ−外の周辺部の装置部位に照射されるとその部位を著しく熱し、装置故障の原因となったり、また、基板６０に形成される薄膜に対して不純物汚染したりする。特に試料が金（ＡＵ）のような原子番号の大きい材料の場合、高い運動エネルギ−を有した反射電子が照射される電子ビ−ムの４５〜５０％の量（加速電圧が１０〜数１０ＫＶの場合）にもなるため、試料ホルダ−周辺の部位に熱的損傷を与えやすい。ただし、本発明の薄膜形成装置１においては、上記の構成をとっているため、本発明における反射電子は、別の試料表面に導かれ、試料ホルダ−周辺の部位を著しく熱することはなく、専ら試料加熱に寄与するようになる。 When the first electron gun 51 constituting the electron beam irradiation unit is energized, the first electron beam 101 is irradiated from the first electron gun 51 toward the surface of the first sample 21. Heat. If necessary, the electron beam irradiation unit is further provided with a pole piece (not shown) in the vacuum chamber 10, and the first electron beam is controlled by controlling the electromagnetic force of the pole piece. 101 may be accelerated, deflected, or condensed. The first electron beam 101 irradiated on the surface of the first sample 21 is not absorbed by the sample 100% and reflects reflected electrons, secondary electrons, characteristic X-rays, Auger electrons, etc. to the periphery. And release. Among these, secondary electrons, characteristic X-rays, Auger electrons, etc. are negligible in terms of energy or occurrence probability, and therefore their influence can be ignored. However, the number of reflected electrons is large, and the energy of each reflected electron has a high kinetic energy equivalent to the energy of each incident electron at the time of irradiation. When this is irradiated, the portion is heated significantly, causing a failure of the apparatus, or contaminating the thin film formed on the substrate 60 with impurities. In particular, when the sample is a material having a large atomic number such as gold (AU), the amount is 45 to 50% of the electron beam irradiated with reflected electrons having high kinetic energy (acceleration voltage is 10 to several tens KV). In this case, the sample holder is likely to be thermally damaged around the sample holder. However, since the thin film forming apparatus 1 according to the present invention has the above-described configuration, the reflected electrons in the present invention are not guided to the surface of another sample, and the portion around the sample holder is not significantly heated. It contributes exclusively to sample heating.

第１試料２１表面に照射された第１電子ビ−ム１０１は、第１試料２１を加熱する。また、第１試料２１への第１電子ビ−ム１０１の照射に伴い発生する第１反射電子１１１は、やや広がりながらも概ねビ−ム状を維持しながら第１試料ホルダ−３１の外に放射される。同一の直線上に第１電子銃５１と第１試料ホルダ−３１および第２試料ホルダ−３２を設けたことにより、第１試料ホルダ−３１の外にビ−ム状で放射された第１反射電子１１１は第２試料ホルダ−３２の方向に向かう。より具体的に説明すると、前記第１反射電子１１１は反射電子照射部を構成する図示しない真空チャンバ−１０内の第１試料ホルダ−３１周縁部に設けられる電磁気力を備えたポ−ルピ−スの制御により、加速されたり、集光されたり、偏向されたりしながら、ビ−ム状で偏向され第２試料ホルダ−３２に保持された第２試料２２に向けて照射される。これにより第２試料２２は加熱されると同時に、その第１反射電子１１１の一部はさらに第２反射電子１２１となり、概ねビ−ム状を維持して第１水冷板８１の方向に向かって反射される。この第２反射電子１２１も同様に、図示しない真空チャンバ−１０内の第２試料ホルダ−３２周縁部に設けられるポ−ルピ−スの制御により、加速されたり、偏向されたり、集光されたりするようにしておいても良い。そのようにして第２反射電子１２１は、第１水冷板８１に向けて照射される。第１水冷板８１は第２反射電子１２１に対して上記のように概ね３０度の角度をもって配置されているので、反射される第３反射電子１３１は第３試料ホルダ−３３の方向に向かい、必要に応じて図示しないポ−ルピ−スにより集光や偏向がなされ第３試料ホルダ−３３内の第３試料２３を加熱する。 The first electron beam 101 irradiated on the surface of the first sample 21 heats the first sample 21. Further, the first reflected electrons 111 generated by the irradiation of the first electron beam 101 to the first sample 21 are outside the first sample holder 31 while maintaining a beam shape while slightly spreading. Radiated. By providing the first electron gun 51, the first sample holder 31 and the second sample holder 32 on the same straight line, the first reflection emitted in a beam shape outside the first sample holder 31. The electrons 111 are directed in the direction of the second sample holder -32. More specifically, the first reflected electron 111 is a pole piece having an electromagnetic force provided at the peripheral portion of the first sample holder 31 in the vacuum chamber 10 (not shown) constituting the reflected electron irradiation unit. The second sample 22 is deflected in the form of a beam and held on the second sample holder 32 while being accelerated, condensed, or deflected by the above control. As a result, the second sample 22 is heated, and at the same time, a part of the first reflected electrons 111 further becomes the second reflected electrons 121, and generally maintains a beam shape toward the first water-cooled plate 81. Reflected. Similarly, the second backscattered electrons 121 are accelerated, deflected, or condensed by controlling pole poles provided at the peripheral edge of the second sample holder 32 in the vacuum chamber 10 (not shown). You may do it. As such, the second reflected electrons 121 are irradiated toward the first water cooling plate 81. Since the first water cooling plate 81 is disposed at an angle of approximately 30 degrees with respect to the second reflected electrons 121 as described above, the reflected third reflected electrons 131 are directed toward the third sample holder 33, If necessary, light is condensed and deflected by a pole piece (not shown) to heat the third sample 23 in the third sample holder 33.

所定時間第１電子ビ−ム１０１を第１試料２１表面に照射した後、第１電子銃５１への通電を停止し、回転保持盤４０を再び回転させることにより、第１電子銃５１、第１水冷板８１及び第１、第２試料ホルダ−３１、３２がほぼ一直線上になるよう配置させ、回転を停止する。第１電子銃５１への通電を再開することにより、第１電子銃５１から第２試料ホルダ−３２内の第２試料２２表面に向けて第１電子ビ−ム１０１が照射され、第２試料２２を加熱する。第１電子ビ−ム１０１の一部は第３試料ホルダ−３３に向けて概ねビ−ム状の第１反射電子１１２として第２試料ホルダ−３２の外に反射される。前記第１反射電子１１２は必要に応じて第２試料ホルダ−３２周縁部に設けた図示しないポ−ルピ−スにより集光され、偏向された後、第３試料ホルダ−３３に保持された第３試料２３に向け照射され、これを加熱すると同時に、その一部は第３反射電子１２２として概ねビ−ム状を維持しながら第１水冷板８１の方向に反射される。第２反射電子は、必要に応じて第３試料ホルダ−３３周縁部に設けた図示しないポ−ルピ−スにより集光され、偏向された後、第１水冷板８１を照射し、その一部を第３反射電子１３２として、第１試料ホルダ−３１に向け反射され第１試料２１を加熱する。 After irradiating the surface of the first sample 21 with the first electron beam 101 for a predetermined time, the energization to the first electron gun 51 is stopped and the rotation holding plate 40 is rotated again, whereby the first electron gun 51, 1 The water cooling plate 81 and the first and second sample holders 31 and 32 are arranged so as to be substantially in a straight line, and the rotation is stopped. By resuming energization of the first electron gun 51, the first electron beam 101 is irradiated from the first electron gun 51 toward the surface of the second sample 22 in the second sample holder 32, and the second sample. 22 is heated. A part of the first electron beam 101 is reflected outside the second sample holder 32 as first reflected electrons 112 having a generally beam shape toward the third sample holder 33. The first reflected electrons 112 are collected and deflected by a pole piece (not shown) provided at the periphery of the second sample holder 32 as necessary, and then the first reflected electrons 112 are held by the third sample holder 33. The three samples 23 are irradiated and heated, and at the same time, a part thereof is reflected in the direction of the first water-cooled plate 81 while maintaining a substantially beam shape as the third reflected electrons 122. The second reflected electrons are collected and deflected by a pole piece (not shown) provided on the peripheral edge of the third sample holder 33 as necessary, and then irradiated to the first water-cooled plate 81 and a part thereof. Are reflected toward the first sample holder 31 as third reflected electrons 132 to heat the first sample 21.

さらに所定時間第１電子ビ−ム１０１を第２試料２２表面に照射した後、第１電子銃５１への通電を停止し、回転保持盤４０を再び回転させることにより、同様に第１電子銃５１と第１水冷板８１の間に第３、第１試料ホルダ−３３、３１をほぼ一直線上に配置させ、回転を停止する。第１電子銃５１への通電の再開により、第１電子銃５１から第３試料ホルダ−３３内の第３試料２３表面に向けて第１電子ビ−ム１０１が照射され、第３試料２３を加熱すると共にその一部の第１反射電子１１３は概ねビ−ム状で第１試料ホルダ−３１の方向に向かって第３試料ホルダ−３３の外に反射される。前記第１反射電子１１３は必要に応じて第３試料ホルダ−３３周縁部に設けた図示しないポ−ルピ−スにより集光されたり、偏向されたりした後、第１試料ホルダ−３１に保持された第１試料２１に向け照射され、これを加熱する。また、これと同時にその一部は第２反射電子１２３として概ねビ−ム状を維持して第１水冷板８１の方向に向けて反射される。第２反射電子１２３は、必要に応じて第１試料ホルダ−３１周縁部に設けた図示しないポ−ルピ−スにより集光された後、第１水冷板８１を照射し同時に、その一部は第３反射電子１３２として、第２試料ホルダ−３２の方向に向かって反射され第２試料２２を加熱する。 Further, after irradiating the surface of the second sample 22 with the first electron beam 101 for a predetermined time, the energization to the first electron gun 51 is stopped, and the rotation holding plate 40 is rotated again to similarly turn the first electron gun. The third and first sample holders 33 and 31 are arranged substantially in a straight line between the first water cooling plate 51 and the first water cooling plate 81, and the rotation is stopped. By resuming energization of the first electron gun 51, the first electron beam 101 is irradiated from the first electron gun 51 toward the surface of the third sample 23 in the third sample holder 33, and the third sample 23 is irradiated. While being heated, a part of the first reflected electrons 113 is substantially beam-shaped and is reflected outside the third sample holder 33 toward the first sample holder 31. The first reflected electrons 113 are collected or deflected by a pole piece (not shown) provided at the periphery of the third sample holder 33 as necessary, and then held by the first sample holder 31. The first sample 21 is irradiated and heated. At the same time, a part of the second reflected electrons 123 is reflected in the direction of the first water cooling plate 81 while maintaining a generally beam shape. The second reflected electrons 123 are collected by a pole piece (not shown) provided on the periphery of the first sample holder 31 as necessary, and then irradiate the first water-cooled plate 81 and at the same time, a part thereof The third reflected electrons 132 are reflected toward the second sample holder 32 and heat the second sample 22.

上記のように順次、回転保持盤４０の回転と停止（位置決め）ならびに第１電子銃５１への所定時間の通電と停止を間欠して繰り返すことにより、第１、第２、第３試料２１、２２、２３を徐々に加熱する。これにより装置に対する熱的な損傷や基板に形成される薄膜への汚染を無くし、さらに反射電子の有効利用が果たせるという格別の効果が得られる。また、第２反射電子１２１の進行方向に対して概ね３０度の角度で第１水冷板８１を配置したので、先行文献１のように反射電子が電子銃側に照射されなくなる。なお、各々の試料がこのようにして加熱され気化温度に達すると、気化した各試料は各試料と対向する位置に配置された基板６０に向かって照射され、基板６０上で冷却されることにより不純物汚染されていない薄膜となる。 By sequentially repeating the rotation and stop (positioning) of the rotary holding plate 40 and the energization and stop of the first electron gun 51 for a predetermined time as described above, the first, second, and third samples 21, 22 and 23 are gradually heated. As a result, thermal damage to the device and contamination of the thin film formed on the substrate can be eliminated, and an extra advantage can be obtained that the reflected electrons can be effectively used. Further, since the first water-cooled plate 81 is disposed at an angle of approximately 30 degrees with respect to the traveling direction of the second reflected electrons 121, the reflected electrons are not irradiated on the electron gun side as in the prior art document 1. When each sample is heated in this way and reaches the vaporization temperature, each vaporized sample is irradiated toward the substrate 60 arranged at a position facing each sample, and cooled on the substrate 60. The thin film is not contaminated with impurities.

実施の形態２．
以下、図面に基づいて本発明の実施の形態２について詳細に説明する。図４は本発明の薄膜形成装置のチャンバ−内に配置された試料ホルダ−の周辺と電子銃の位置関係について示す上面図である。なお、図４の各部位において図１ないし図３中と同一部分ないし相当部分には同一符号を付与している。 Embodiment 2. FIG.
Hereinafter, a second embodiment of the present invention will be described in detail with reference to the drawings. FIG. 4 is a top view showing the positional relationship between the periphery of the sample holder arranged in the chamber of the thin film forming apparatus of the present invention and the electron gun. 4 that are the same as or equivalent to those in FIGS. 1 to 3 are assigned the same reference numerals.

図４に示すように本発明の実施の形態２の薄膜形成装置２は、実施の形態１に示した薄膜形成装置１の回転保持盤４０を固定保持盤４１と交換し、新たに第２、第３電子銃５２、５３および第２、第３水冷板８２、８３を設け、それ以外の部分は下記のなお書きの点を除いて実施の形態１と全く同じ構成にしたものである。なお、第１電子銃５１、第１水冷板８１及び第１、第２試料ホルダ−３１、３２ならびに、第２電子銃５２、第２水冷板８２及び第２、第３試料ホルダ−３２、３３ならびに、第３電子銃５３、第３水冷板８３及び第３、第１試料ホルダ−３３、３１のそれぞれの位置関係は、ほぼ一直線上に並ぶような関係にあり、さらに、第１、第２、第３水冷板８１、８２、８３が第２反射電子１２１、１２２、１２３の照射される方向に対して概ね０度に配置されている。 As shown in FIG. 4, the thin film forming apparatus 2 according to the second embodiment of the present invention replaces the rotary holding disk 40 of the thin film forming apparatus 1 shown in the first embodiment with a fixed holding disk 41, and newly adds second, Third electron guns 52 and 53 and second and third water cooling plates 82 and 83 are provided, and the other parts are the same as those in the first embodiment except for the following remarks. The first electron gun 51, the first water cooling plate 81 and the first and second sample holders 31 and 32, and the second electron gun 52, the second water cooling plate 82 and the second and third sample holders 32 and 33, respectively. In addition, the positional relationship between the third electron gun 53, the third water cooling plate 83, and the third and first sample holders 33, 31 is such that they are arranged in a substantially straight line. The third water cooling plates 81, 82, 83 are arranged at approximately 0 degrees with respect to the direction in which the second reflected electrons 121, 122, 123 are irradiated.

本発明の実施の形態２の薄膜形成装置においては、第１、第２、第３電子銃５１、５２、５３を設けたことにより、それぞれの電子銃を同時に稼動させる事が可能となっている。各電子銃から放射される第１、第２、第３電子ビ−ム１０１、１０２、１０３はそれぞれの対応する試料上において、実施の形態１の薄膜形成装置と同様に第１反射電子１１１、１１２、１１３を生成し、必要に応じて図示しないポ−ルピ−スの制御により集光されたり、偏向されたりし、順次対応する試料ホルダ−内の試料上に照射される。また、実施の形態２の薄膜形成装置と同様に第２反射電子１２１、１２２、１２３、第３反射電子１３１、１３２、１３３が生成され、それぞれ対応する試料ホルダ−内の試料の加熱に供される。 In the thin film forming apparatus according to Embodiment 2 of the present invention, the first, second, and third electron guns 51, 52, and 53 are provided, so that each electron gun can be operated simultaneously. . The first, second, and third electron beams 101, 102, and 103 radiated from each electron gun are respectively reflected on the corresponding samples by the first reflected electrons 111, as in the thin film forming apparatus of the first embodiment. 112 and 113 are generated, condensed or deflected as required by control of a pole piece (not shown), and sequentially irradiated onto the sample in the corresponding sample holder. Similarly to the thin film forming apparatus of the second embodiment, second reflected electrons 121, 122, 123 and third reflected electrons 131, 132, 133 are generated and used for heating the sample in the corresponding sample holder. The

第１、第２、第３電子銃５１、５２、５３を同時に稼動させる場合、第１、第２、第３試料２１、２２、２３を同時に加熱できるため、本発明の実施の形態２の薄膜形成装置は短時間によって各試料を加熱できるようになる。また、電子銃を同時に稼動させずに異なるタイミングや異なる通電時間での実施により、それぞれ時間差を設けてパルス状として各試料ホルダ−内の各試料に第１、第２、第３電子ビ−ム１０１、１０２、１０３を順次照射することも可能となり、その結果、特に互いの電子銃から放射される電子ビ−ムと各反射電子との間の干渉を無くすことができ、ポ−ルピ−スの持つ電磁気力による各反射電子の集光性の改善や偏向等の制御が容易となり、より加熱効率の良い薄膜形成装置を得ることができるという格別の効果が得られる。なお、各水冷板の表面から反射される図示しない第３反射電子のもつ総エネルギ−は、第１電子ビ−ムのもつ総エネルギ−に比べて、反射を複数回繰り返しているので、その反射電子の量が減っているため、充分に小さくなっている。従って、先行文献１のように第３反射電子が電子銃側に照射されているにも関わらず、電子銃側にはあまり影響しないという格別の効果を達成する。 When the first, second, and third electron guns 51, 52, and 53 are operated at the same time, the first, second, and third samples 21, 22, and 23 can be heated at the same time. Therefore, the thin film according to the second embodiment of the present invention. The forming apparatus can heat each sample in a short time. In addition, the first, second, and third electron beams can be applied to each sample in each sample holder in the form of a pulse by providing a time difference by operating at different timings and different energization times without simultaneously operating the electron gun. It is also possible to sequentially irradiate 101, 102, and 103. As a result, interference between the electron beam emitted from each electron gun and each reflected electron can be eliminated, and the pole piece can be eliminated. This makes it possible to easily improve the light condensing property of each reflected electron by the electromagnetic force possessed and to control the deflection and the like, and to obtain a special effect that a thin film forming apparatus with higher heating efficiency can be obtained. The total energy of the third reflected electrons (not shown) reflected from the surface of each water-cooled plate is reflected a plurality of times as compared with the total energy of the first electron beam. Since the amount of electrons is decreasing, it is sufficiently small. Therefore, even if the third backscattered electron is irradiated on the electron gun side as in the prior art document 1, it achieves a special effect that the electron gun side is not significantly affected.

なお、上記実施の形態２の薄膜形成装置においては、第１電子銃５１、第１水冷板８１及び第１、第２試料ホルダ−３１、３２がほぼ一直線上に並ぶように配置させたが、必ずしも一直線上に配置させる必要性は無く、多少複雑な配置関係になるが、図示しないポ−ルピ−スの電磁気力により、電子ビ−ムや反射電子を適宜高精度に制御することにより、それぞれ対応する試料ホルダ−内の試料表面に電子を供給できるようにしても良く、同様に加熱効率の良い薄膜形成装置を得ることができる。また、同様の理由で、第２試料から照射される第２反射電子を、第１冷却板に送ることなく、第３試料に照射することも可能である。この場合、第１冷却板によるエネルギ−損失が無いので、さらに高い加熱効率が得られる。 In the thin film forming apparatus of the second embodiment, the first electron gun 51, the first water cooling plate 81, and the first and second sample holders 31 and 32 are arranged so as to be substantially aligned. Although it is not always necessary to arrange them in a straight line, it becomes a somewhat complicated arrangement relationship, but by controlling the electron beam and the reflected electrons with high precision appropriately by the electromagnetic force of a pole piece not shown, Electrons can be supplied to the sample surface in the corresponding sample holder, and a thin film forming apparatus with high heating efficiency can be obtained in the same manner. For the same reason, it is also possible to irradiate the third sample without sending the second reflected electrons irradiated from the second sample to the first cooling plate. In this case, since there is no energy loss due to the first cooling plate, higher heating efficiency can be obtained.

実施の形態３．
以下、本発明の実施の形態３について詳細に説明する。本発明の実施の形態３は第１、第２、第３試料２１、２２、２３として、鉄、クロム、ニッケルを用い、ＦＥ−ＣＲ−ＮＩ合金薄膜を作成するものである。これらの金属の融点は、鉄において１８００℃、クロムにおいて約１９００℃、ニッケルにおいて約１７００℃であり、それぞれの蒸発温度は１２００℃〜１４００℃程度である。各々の蒸発温度に合わせて必要なエネルギ−照射の条件を選択することにより、任意の膜組成や膜構成を持った薄膜形成が可能となり、高いエネルギ−利用率でのＦＥ−ＣＲ−ＮＩ合金薄膜が形成できる。 Embodiment 3 FIG.
Hereinafter, Embodiment 3 of the present invention will be described in detail. In the third embodiment of the present invention, as the first, second, and third samples 21, 22, and 23, iron, chromium, and nickel are used to form an FE-CR-NI alloy thin film. The melting points of these metals are 1800 ° C. for iron, about 1900 ° C. for chromium, and about 1700 ° C. for nickel, and the respective evaporation temperatures are about 1200 ° C. to 1400 ° C. By selecting the necessary energy irradiation conditions according to each evaporation temperature, it becomes possible to form a thin film having an arbitrary film composition and film structure, and an FE-CR-NI alloy thin film with a high energy utilization rate. Can be formed.

具体的なＦＥ−ＣＲ−ＮＩ合金の成薄膜条件の一例としては、鉄、クロム、ニッケルそれぞれに投入するエネルギ−の割合を１６：１１：９とすればよく、その場合の各々の材料の反射電子生成率は約３０％（加速電圧１０〜数１０ＫＶにおいて）程度になるため、第１電子ビ−ムの加速電圧を２０ＫＶ、第２電子ビ−ムの加速電圧を１０ＫＶ、第３電子ビ−ムＥＢの加速電圧を１０ＫＶとすればよい。これにより、高いエネルギ−利用率でのＦＥ−ＣＲ−ＮＩ合金薄膜が形成できる。なお、ここではＦＥ−ＣＲ−ＮＩの３元系について説明したが、他の金属の組み合わせでも同様に実施可能であるのは言うまでも無い。 As an example of a specific thin film condition of the FE-CR-NI alloy, the ratio of energy input to each of iron, chromium, and nickel may be 16: 11: 9, and the reflection of each material in that case Since the electron generation rate is about 30% (acceleration voltage 10 to several tens of KV), the acceleration voltage of the first electron beam is 20 KV, the acceleration voltage of the second electron beam is 10 KV, and the third electron beam is about 30%. The acceleration voltage of the EB may be 10 KV. Thereby, the FE-CR-NI alloy thin film with a high energy utilization factor can be formed. Although the FE-CR-NI ternary system has been described here, it is needless to say that other combinations of metals can be similarly implemented.

また、上記実施の形態１ないし実施の形態３の薄膜形成装置においては、各試料ホルダ−内の各試料に向けて電子ビ−ムや反射電子を照射する構成にしていたが、電子ビ−ムの照射位置を各試料に代えて各試料ホルダ−に照射し、各試料ホルダ−の加熱により、同様に各試料を溶解し蒸発させることも可能である。その際、それぞれ対応する電子ビ−ムの照射強度に合わせた冷却容量の冷却機構を試料ホルダ−に設けることにより、合金組成の制御性を良くした成膜が可能となる。さらに、各電子銃を固定した場合について説明したが、電子銃は必ずしも固定しておく必要は無い。例えば、装置構成は複雑になるものの電子ビ−ムを走査させることにより、複数の試料ホルダ−に収められた試料に照射できるようにすることも可能である。このような構成とすることにより、目的に合わせて電子銃の数を適宜最適化できるという効果が得られる。また、電子ビ−ム発生源に電子銃を用いて説明したが、必ずしも電子銃を用いる必要はなく、電子ビ−ムを発生できるものであればいかなる装置であっても良く、上記実施の形態１ないし実施の形態３の薄膜形成装置と同様の効果が得られる。 In the thin film forming apparatus according to the first to third embodiments, the electron beam or the reflected electron is irradiated to each sample in each sample holder. It is also possible to irradiate each sample holder in place of the respective irradiation positions and to dissolve and evaporate each sample in the same manner by heating each sample holder. At that time, by providing the sample holder with a cooling mechanism having a cooling capacity corresponding to the irradiation intensity of the corresponding electron beam, film formation with improved controllability of the alloy composition becomes possible. Furthermore, although the case where each electron gun was fixed was demonstrated, the electron gun does not necessarily need to be fixed. For example, although the apparatus configuration is complicated, it is also possible to irradiate a sample stored in a plurality of sample holders by scanning an electron beam. By adopting such a configuration, there is an effect that the number of electron guns can be appropriately optimized according to the purpose. Further, although the electron gun is used as the electron beam generation source, it is not always necessary to use an electron gun, and any device that can generate an electron beam may be used. The same effects as those of the thin film forming apparatus according to the first to third embodiments can be obtained.

本発明の薄膜形成装置を示す構成図である。It is a block diagram which shows the thin film forming apparatus of this invention. 実施の形態１の試料ホルダ−と電子銃の配置を示す斜視図である。FIG. 3 is a perspective view showing an arrangement of a sample holder and an electron gun according to the first embodiment. 実施の形態１の試料ホルダ−と電子銃の配置を示す上面図である。FIG. 3 is a top view showing the arrangement of the sample holder and the electron gun according to the first embodiment. 実施の形態２の試料ホルダ−と電子銃の配置を示す上面図である。FIG. 10 is a top view showing the arrangement of a sample holder and an electron gun according to a second embodiment.

Explanation of symbols

３１第１試料ホルダ− ３２第２試料ホルダ−
４０回転保持盤４１固定保持盤
５１第１電子銃５２第２電子銃
１０１第１電子ビ−ム１０２第２電子ビ−ム
１１１第１反射電子１２１第２反射電子 31 First Sample Holder 32 Second Sample Holder
40 Rotation holding board 41 Fixed holding board 51 First electron gun 52 Second electron gun
101 1st electron beam 102 2nd electron beam 111 1st reflected electron 121 2nd reflected electron

Claims

An electron beam irradiating section for irradiating the electron beam into the first sample holder, and a reflection for irradiating the second sample holder with the reflected electrons of the electron beam emitted from the first holder. A thin film forming apparatus comprising an electron irradiation unit.

2. The thin film according to claim 1, wherein the electron beam generation source is an electron gun, and the electron gun, the first sample holder, and the second sample holder can be arranged on the same straight line. Forming equipment.

3. The reflected light emitted from the inside of the first holder is controlled by the electromagnetic force of the pole piece so as to irradiate the inside of the second sample holder. Thin film forming equipment.

At least a first sample holder and a second sample holder are provided around the rotation center of the rotating holder, and the electron beams emitted from the same electron beam generation source are contained in the first sample holder or the first sample holder. The thin film forming apparatus according to any one of claims 1 to 3, further comprising an electron beam irradiation unit for intermittently irradiating the two sample holders.

A first electron beam irradiating unit for intermittently irradiating at least the first electron beam into the first sample holder, and a second electron beam for irradiating the second electron beam into the second sample holder. 4. The apparatus according to claim 1, further comprising a beam irradiation unit, wherein the irradiation time of the first electron beam and the irradiation time of the second electron beam are different from each other. The thin film forming apparatus according to any one of the above.