JP2007324369A - Substrate peripheral processing equipment - Google Patents

Abstract

An object of the present invention is to efficiently prevent heat locally applied to an outer peripheral portion of a base material from being transmitted to an inner portion of the outer periphery of the base material.
A substrate 90 is brought into contact with and supported on a front support surface of a stage 10 and rotated. The outer peripheral part of the base material 90 is protruded from the stage 10, and the outer peripheral part is locally irradiated with radiant heat from the radiant heater 33. On the back surface 10b of the stage 10, heat radiating fins 60 are provided so as to extend from the outer periphery of the stage 10 toward the center.
[Selection] Figure 3

Description

  The present invention relates to an apparatus and a method for removing unnecessary materials such as an organic film provided on the outer periphery of a substrate such as a semiconductor wafer or a liquid crystal panel.

The structure and functions of semiconductor devices are becoming finer, higher integrated, and faster year by year. They are realized by the change of semiconductor materials and the accompanying progress of manufacturing equipment. In general, the wiring material is changed from Al to Cu, and the insulating film is changed from SiO ₂ (relative dielectric constant of about 4) to a so-called low-k material having a lower dielectric constant.

Conventionally, when a trench for a wiring pattern is chemically etched in an insulating film formed on a semiconductor wafer, a protective material component made of, for example, fluorocarbon is mixed in the etching gas in order to suppress isotropic etching. As a result, a protective film of fluorocarbon is coated on the inner wall of the groove formed gradually so that etching proceeds anisotropically only in the direction of the bottom surface of the groove. On the other hand, the fluorocarbon may wrap around from the outer end surface of the wafer to the back side, and may be deposited on the outer peripheral portion of the back surface of the wafer.
When the insulating layer is SiO ₂ , when the photoresist on the insulating layer is dry-ashed with oxygen plasma, the fluorocarbon film on the outer periphery of the back surface is removed by passing the oxygen plasma from the front surface to the back surface of the wafer. It was possible enough.
However, when the insulating layer is a low-k film, if the dry ashing is made too strong, the low-k film is damaged. Therefore, an attempt has been made to perform an ashing process at a low output, but in this case, the fluorocarbon film on the back surface of the wafer cannot be completely removed. If this is left as it is, particles may be generated when the substrate is transported, and the yield may be reduced.

  Thus, for example, in the device described in Patent Document 1, for example, ozone is locally sprayed as a reactive gas on the outer peripheral portion of the wafer, and the ozone spraying portion is locally irradiated and heated to promote the oxidation reaction. The unnecessary film on the outer periphery of the wafer is removed.

On the other hand, depending on the heating temperature of the outer peripheral portion of the wafer, the film on the front side surface of the wafer may be damaged. Therefore, in the above-described Patent Document 1, a cooling chamber is provided in a stage on which a wafer is placed, and a fluid such as water or air is introduced into the cooling chamber. The stage is slightly smaller in diameter than the wafer, and the outer periphery of the wafer protrudes from the stage. As a result, the inner portion of the wafer except the outer peripheral portion comes into contact with the stage. Heat from the outer periphery of the wafer can be conducted to the stage through this contact portion to absorb and cool the heat.
JP 2006-049869 A

  In general, there are cooling means using three phenomena of heat conduction, convection, and radiation. Among them, heat conduction is excellent because it can perform heat exchange most efficiently, but it is considered effective to use convection phenomena and radiation phenomena other than heat conduction to further increase the cooling efficiency.

The present invention has been made based on the above consideration, and in an apparatus for heating and processing the outer peripheral portion of a substrate,
(A) a stage having a support surface that supports the base material in contact with a portion near the outer peripheral portion of the base material, and a back surface opposite to the support surface;
(B) a radiant heater that locally radiates radiant heat to the outer periphery of the substrate supported by the stage;
(C) a rotation mechanism for rotating the stage;
(D) a radiating fin provided on the back surface of the stage;
The first feature is that The heat radiating fins preferably extend in a direction intersecting with the circumferential direction of the back surface of the stage.
As a result, the heat locally applied to the outer periphery of the base material is transmitted to the stage through the contact surface between the base material and the stage, and this is radiated from the heat radiating fin, and around the heat radiating fin by the rotation of the stage. It can dissipate heat by causing forced convection of atmospheric gas. Thereby, it can prevent efficiently that heat is transmitted to the inner side from the outer peripheral part of a base material, and can protect an inner side part from the outer periphery of a base material.

It is preferable that the heat dissipating fins are inclined in the circumferential direction as approaching the central portion of the stage back surface.
Thereby, the flow of the atmospheric gas can be formed along the longitudinal direction of the radiating fin, and the heat radiation efficiency can be improved.

It is more preferable that the radiating fin is inclined to the opposite side to the rotation direction by the rotation mechanism as it approaches the center of the stage back surface.
Thereby, the flow of the atmospheric gas to the center side of the stage can be formed along the longitudinal direction of the fin, and the heat radiation efficiency can be improved.
The heat radiating fins may be linear as viewed from the direction orthogonal to the back surface of the stage (viewed from the back surface) or may be curved.

It is preferable to provide heat absorption means for absorbing heat on the stage. As the heat absorption means, for example, a refrigerant chamber may be formed in the stage, and the refrigerant may be fed into the refrigerant chamber from an external refrigerant source. On the other hand, it is necessary to provide a reciprocating path of the refrigerant between the refrigerant source that is a fixed system and the refrigerant chamber in the rotating stage. Therefore, it is necessary to ensure the communication and sealing performance at the part where the refrigerant reciprocating path crosses the fixed system and the rotating system, which not only complicates the structure but also applies a load due to the sealing pressure on the rotating mechanism, and the required power Becomes larger.
Therefore, it is preferable that the heat absorption means is completed by a rotating system including a stage and does not require connection to the outside of the rotating system. As such heat absorption means, it is preferable to use a heat pipe including an evaporating part for evaporating the working fluid and a condensing part for condensing the working fluid.
The present invention, in an apparatus for heating and processing the outer peripheral portion of the substrate,
(A) a stage having a support surface that supports the substrate in contact with at least the vicinity of the outer peripheral portion of the substrate, and a back surface opposite to the support surface;
(B) a radiant heater that locally radiates radiant heat to the outer periphery of the substrate supported by the stage;
(C) a rotation mechanism for rotating the stage;
(E) a heat pipe provided on the stage, including an evaporating part for evaporating the working fluid and a condensing part for condensing;
The second feature is that it is provided.
Thereby, the heat from the outer peripheral part of the base material can be sufficiently absorbed by the heat pipe, and the heat can be more reliably prevented from being transmitted to the inner part from the outer peripheral part of the base material. In addition, heat absorption and heat dissipation can be performed within the stage, and there is no need to move the refrigerant back and forth between the stationary system outside the stage and the rotating system including the stage, and the communication and sealing between the stationary system and the rotating system. The problem does not occur. Therefore, not only can the structure be simplified, but resistance due to seal pressure does not occur between the stationary system and the rotating system, and the required power of the rotating mechanism can be suppressed.

The heat pipe preferably extends in a direction intersecting the circumferential direction of the stage. It is preferable that the evaporation unit is disposed at an end portion of the heat pipe facing the outer peripheral side of the stage, and the condensing unit is disposed at an end portion of the heat pipe facing the center side of the stage.
This effectively absorbs heat on the side close to the heating location, can reliably prevent the heat from being transmitted to the inner portion from the outer peripheral portion of the base material, and can dissipate heat at the stage center side away from the heating location. it can.
More preferably, it is combined with the heat pipe and the radiation fin. In this case, the radiation fins may extend from the outer peripheral portion of the stage toward the central portion, or may extend in a direction orthogonal to the direction from the outer peripheral portion of the stage toward the central portion. A plurality of radiating fins, each radiating fin extending in a direction perpendicular to the direction from the outer peripheral portion of the stage toward the central portion, and the plurality of radiating fins toward each other from the outer peripheral portion of the stage toward the central portion May be arranged side by side. The plurality of radiating fins are preferably arranged closer to the condensing part than the evaporation part of the heat pipe.

In the first and second features, it is preferable that an outer peripheral portion of the base material protrudes from the stage.
An annular convex portion is provided on the outer peripheral portion of the stage. It is preferable that the top surface of the annular convex portion is the support surface.
Thereby, the contact area of a stage and a base material can be made small, and generation | occurrence | production of the particle by contact can be reduced. Moreover, the heat which is going to be transmitted inside from the outer peripheral part of a base material can be transmitted to the annular convex part of a stage in the immediate vicinity of an outer peripheral part, and an inner part can be reliably protected from the outer peripheral part of a base material.

In the first and second features, it is preferable to further include a reactive gas blowing section that blows a reactive gas to a location where the radiation heater is locally heated.
Thereby, a base-material outer peripheral part can be processed efficiently.

  According to the present invention, the heat locally applied to the outer peripheral portion of the base material is transferred to the stage through the contact surface between the base material and the stage to absorb the heat, which is radiated from the radiation fin, and the rotation of the stage. Thus, forced convection of the atmospheric gas can be caused around the radiating fins to radiate heat. Thereby, heat can be efficiently prevented from being transmitted from the outer peripheral portion of the base material to the inside, and the inner portion can be protected from the outer periphery of the base material.

  Hereinafter, a first embodiment of the present invention will be described. As shown in phantom lines in FIG. 1, the processing target base material of this embodiment is a semiconductor wafer 90 made of silicon, for example. The silicon wafer 90 has a circular thin plate shape. As shown in FIG. 2, an insulating layer 91 made of a low-k material is formed on the front side surface of the wafer 90 as a required layer that constitutes the semiconductor device. A wiring pattern groove 91 a is formed in the insulating layer 91. A wiring pattern 94 made of Cu or the like is provided in the wiring pattern groove 91a.

  A fluorocarbon film 93 is coated on the outer peripheral portion of the back surface of the silicon wafer 90. The fluorocarbon film 93 extends over the entire circumference of the wafer 90 and has a width along the radial direction (a direction perpendicular to the circumferential direction). The fluorocarbon film 93 is a film in which the fluorocarbon mixed in the etching gas is deposited around the back side of the wafer when the insulating layer 91 is coated with a photoresist and the wiring pattern groove 91a is formed by etching. . The fluorocarbon serves as a protective material for ensuring etching anisotropy by allowing etching to proceed only in the depth direction. Most of the fluorocarbon is removed together with the photoresist in the subsequent ashing process, but the portion that wraps around the back side of the wafer 90 cannot be completely removed and remains as a film 93.

The substrate outer periphery processing apparatus 1 according to this embodiment removes the fluorocarbon film 93 on the outer periphery of the back surface of the wafer 90 as an unnecessary material.
As shown in FIGS. 1 and 2, the substrate outer periphery processing apparatus 1 includes a stage 10 on which a wafer 90 is placed and a processing head 20 disposed on a side portion of the stage 10.

  As shown in FIG. 1, the stage 10 is made of a material having good heat conduction (for example, a metal such as aluminum) and has a horizontal disk shape. In the case of the aluminum stage 10, the surface thereof is subjected to hard anodizing. The thickness of the stage 10 is about 30 mm or so, for example.

  As shown in FIG. 2, a rotation mechanism 50 is connected to the vertical central axis 11 of the stage 10. The stage 10 is rotated around the central axis 11 by the rotation mechanism 50. The rotational speed of the stage 10 is appropriately set according to the input energy from the laser irradiation unit 33 described later. For example, when the input energy is about 200 W, the rotation speed of the stage 10 is preferably about 50 rpm, and when the input energy is about 140 W, the rotation speed is preferably about 25 rpm.

  As shown in FIGS. 1 and 2, an annular convex portion 12 is formed on the outer peripheral portion of the upper surface of the stage 10 over the entire circumference. The wafer 90 is set horizontally on the upper surface 12a (base material support surface) of the annular convex portion 12 with its center aligned. Although illustration is omitted, an adsorption groove is formed on the upper surface 12a of the annular convex portion 12, and by sucking the adsorption groove, the wafer 90 is adsorbed and supported on the upper surface 12a of the annular convex portion 12. Yes. A portion inside the annular convex portion 12 on the upper surface of the stage 10 is a concave portion and is not in contact with the wafer 90. Therefore, only the upper surface 12 a of the annular convex portion 12 is in contact with the wafer 90. Thereby, the contact area of the stage 10 and the wafer 90 can be made small, and generation | occurrence | production of the particle by contact can be reduced.

  The diameter of the stage 10 (the outer diameter of the annular protrusion 12) is slightly smaller than the diameter of the wafer 90. For example, the diameter of the stage 10 is about 260 mm while the diameter of the wafer 90 is about 300 mm. Therefore, the outer peripheral portion of the wafer 90 is slightly protruded from the outer edge of the stage 10. As a result, the entire fluorocarbon film 93 on the outer periphery of the back surface of the wafer 90 is exposed.

The processing head 20 includes a container-shaped head main body 21 that opens to the stage 10 side, a laser irradiation unit 33 (radiation heater) provided in the head main body 21, and a reactive gas nozzle 43 (reactive gas blowing section). And a suction nozzle 44.
Although not shown, a position adjusting mechanism is connected to the processing head main body 21. The position of the processing head 20 is adjusted in the radial direction of the stage 10 by this position adjusting mechanism.

  The laser irradiation unit 33 in the processing head 20 is connected to a laser light source 31 (radiant heat light source) via an optical fiber cable 32 (heat beam transmission means). The laser light source 31 emits, for example, an LD (semiconductor) laser beam having an emission wavelength of 808 nm to 940 nm as a radiant heat processing medium. The laser light source 31 is not limited to the LD, and various types such as YAG and excimer may be used.

As shown in FIG. 1, the irradiation unit 33 is disposed on the lower side and the radially outer side of the wafer 90, and is directed obliquely upward so as to face the outer peripheral portion of the wafer 90.
The irradiation unit 33 may be disposed directly below the outer peripheral portion of the wafer 90 while facing the outer peripheral portion of the wafer 90, may be disposed at the same height as the wafer 90, or may be disposed above the wafer 90. .

  Although not shown, the irradiation unit 33 accommodates a condensing optical system including optical elements such as a convex lens and a cylindrical lens. The tip of the optical fiber cable 32 is optically connected to the condensing optical system. The condensing optical system converges and irradiates the laser L transmitted through the optical fiber cable 32 obliquely upward toward the outer peripheral portion of the wafer 90. The irradiation unit 33 is provided with a focus adjusting mechanism for adjusting the condensing diameter of the laser L by shifting the condensing optical system along the laser optical axis.

As shown in FIG. 1, a gas supply path 42 extends from the reactive gas source 41. The tip of the gas supply path 42 is connected to the reactive gas nozzle 43 in the processing head 20. As the reactive gas source 41, an ozonizer that generates ozone (O ₃ ) is used. Ozone is a reactive gas suitable for removing an organic film such as the fluorocarbon film 93. An atmospheric pressure plasma discharge device is used instead of the ozonizer 41 as a reactive gas source, and oxygen is introduced into the plasma discharge space between the electrodes of the atmospheric pressure plasma discharge device to obtain an oxygen-based reactive gas such as an oxygen radical. It may be.
Oxygen (O ₂ ) as a reactive gas may be supplied as it is to the reactive gas nozzle 43 and blown out.
As the reactive gas, a fluorine-based gas such as CF ₄ may be used instead of the oxygen-based gas.

  The reactive gas nozzle 43 is made of a translucent material and has a tubular shape. As the light-transmitting material, glass, acrylic, transparent resin, or the like can be used. As the glass, quartz, borosilicate glass, alkali soda glass, or the like can be used. As the transparent resin, transparent polytetrafluoroethylene (PTFE), transparent tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), transparent polycarbonate, transparent vinyl chloride, or the like can be used.

  The reactive gas nozzle 43 is disposed on the lower side of the wafer 90 and is inclined obliquely upward so that the front end portion faces the irradiation spot of the laser irradiation unit 33. As shown in FIG. 1, the blowing direction of the reactive gas nozzle 43 is substantially along the circumferential direction (tangential direction) of the wafer 90 in plan view.

The suction nozzle 44 is made of a light-transmitting material similar to that of the reactive gas nozzle 43 and has a larger diameter than the reactive gas nozzle 43. As shown in FIG. 1, the suction nozzle 44 is disposed so as to face the reactive gas nozzle 43 along the circumferential direction (tangential direction) of the wafer 90 in plan view. An irradiation spot of the laser irradiation unit 33 is arranged between the tip portions of the nozzles 43 and 44. The suction nozzle 44 is disposed downstream of the reactive gas nozzle 43 in the rotation direction of the stage 10 (for example, counterclockwise in plan view).
The orientation of the nozzles 43 and 22 and the arrangement relationship between them can be set as appropriate.
An exhaust passage 45 extends from the suction nozzle 44 and is connected to an exhaust means 46 such as an exhaust pump.

The most characteristic configuration of the present invention will be described.
As shown in FIGS. 2 and 3, the stage 10 b is provided with a plurality of (for example, eight) radiating fins 60. The heat radiating fins 60 are made of a material having good heat conduction (for example, aluminum). Each radiating fin 60 has a flat plate shape that is orthogonal to the stage back surface 10 b and extends in the radial direction (direction intersecting the circumferential direction) of the stage back surface 10 b, and protrudes downward from the back surface 10 b of the stage 10. The plurality of radiating fins 60 are arranged radially at equal intervals in the circumferential direction of the stage 10.
The radiating fins 60 may be formed integrally with the stage back surface 10b, or may be configured separately and fixed to the stage back surface 10b.

The base-material outer periphery processing apparatus 1 of the said structure is used as follows.
The wafer 90 is aligned and placed on the stage 10, and the outer peripheral portion including the fluorocarbon film 93 of the wafer 90 is projected outward in the radial direction of the stage 10. Then, the laser light L from the laser light source 31 is emitted from the condensing unit 33 and condensed on one place of the fluorocarbon film 93 on the outer periphery of the back surface of the wafer 90. As a result, the fluorocarbon film 93 is locally and instantaneously heated at a high temperature. At the same time, ozone from the ozonizer 41 is blown out from the reactive gas nozzle 43 along the tangential direction of the wafer 90 in a plan view, and is applied to the locally heated portion of the fluorocarbon film 93. As a result, the fluorocarbon film 93 at that location reacts with ozone and is removed. The treated ozone and reaction by-products are sucked into the suction nozzle 44 and discharged from the exhaust means 46. Furthermore, the fluorocarbon film 93 can be removed over the entire circumference by rotating the stage 10 and thus the wafer 90 around the central axis by the rotation mechanism 50. Further, the entire fluorocarbon film 93 can be removed by sequentially shifting the processing head 20 in the radial direction of the stage 10, that is, in the width direction of the fluorocarbon film 93.

  The heat locally applied to one place on the outer periphery of the wafer 90 by the laser irradiation unit 33 diffuses from the heated place to the periphery. Among them, the heat that is to be transmitted toward the inside in the radial direction of the wafer 90 is transferred into the stage 10 through the contact portion with the annular convex portion 12 of the stage 10 in the immediate vicinity of the heating portion. As a result, it is possible to prevent the temperature inside the outer peripheral portion of the wafer 90 from becoming high temperature and to prevent the required films 91 and 94 on the front side surface from being damaged.

  The heat transmitted to the stage 10 can be removed by radiation from the radiation fins 60. This heat is radiated while being conducted from the outer peripheral end of the radiating fin 60 toward the central end. In addition, forced convection of atmospheric gas (air, nitrogen, etc.) occurs around the radiating fin 60 due to the rotation of the stage 10. Since the radiating fin 60 extends in the radial direction of the stage 10 and is orthogonal to the direction of rotation, a pressure difference can be formed in the ambient gas around it, and the flow rate of the ambient gas flow can be increased. Thereby, the heat dissipation efficiency from the fin 60 can be improved. As a result, heat that is to be transferred from the outer peripheral portion of the wafer 90 to the inside in the radial direction can be efficiently transferred to the stage 10. As a result, damage to the required films 91 and 94 on the front side surface of the wafer 90 can be prevented more reliably.

Next, another embodiment of the present invention will be described.
The longitudinal direction of the radiating fin 60 is not limited to being straight along the radial direction of the stage 10, but may be inclined in the circumferential direction with respect to the radial direction as shown in FIG. 4. In this case, it is preferable that the radiating fin 60 is inclined to the opposite side to the rotation direction of the stage 10 as it approaches the center of the stage back surface 10b. The inclination angle of the radiation fin 60 with respect to the radial direction of the stage 10 is preferably about 30 °, for example. The inclination angles of the plurality of fins 60 are preferably equal to each other and are rotationally symmetric.

  According to this inclined fin structure, as shown by the arrow row in FIG. 4, it is possible to form an atmospheric gas flow from the outer peripheral side toward the central side along the surface of each radiating fin 60 on the rotational traveling direction side. Thereby, the heat transmitted to the outer peripheral end of the radiating fin 60 can be efficiently released and removed.

  An endothermic means may be provided inside the stage 10. As the heat absorption means, for example, a refrigerant chamber may be formed in the stage, and the refrigerant may be sent into the refrigerant chamber. On the other hand, it is necessary to provide a refrigerant forward path from an external refrigerant source through the rotary shaft 11 to the refrigerant chamber in the stage, and a refrigerant return path from the refrigerant chamber to the outside through the rotary shaft 11. Therefore, it is necessary to ensure the communication and sealing performance of the refrigerant reciprocation path between the stationary system including the refrigerant source and the rotating system including the stage 10, and not only the structure becomes complicated, but also the stationary system and the rotating system The load due to the seal pressure is applied to the rotation mechanism 50, and the required power increases.

Therefore, in the embodiment shown in FIGS. 5 and 6, the heat pipe 70 is used as the heat absorbing means.
As shown in FIG. 6, the heat pipe 70 includes a pipe body 71 whose both ends are closed, a large number of fine wire-like wicks 72 accommodated in the pipe body 71, and the wick 72 connected to the inner wall of the pipe body 71. And a coiled member 73 to be attached. The pipe body 71 is made of a material having good thermal conductivity such as aluminum or copper. The pipe body 71 is embedded in the stage 10 so as to extend along the radial direction of the stage 10. An end portion on the outer peripheral side of the pipe main body 71 is bent upward and enters the inside of the annular convex portion 12.

  A working fluid is sealed inside the pipe body 71. The working fluid is composed of water or chlorofluorocarbon, for example.

The outer peripheral end of the heat pipe 70 constitutes an evaporating part 75 where the working fluid evaporates, and the central end constitutes a condensing part 76 where the working fluid condenses.
The inside of the coil-shaped member 73 is a passage through which the working fluid (gas phase) evaporated by the evaporator 75 is directed to the condenser 76.
The wick 72 constitutes a capillary that sends the working fluid (liquid phase) of the condensing unit 76 to the evaporating unit 75.

  A plurality of (for example, eight) heat pipes 70 are arranged radially at equal intervals in the circumferential direction of the stage 10. The heat pipes 70 of this embodiment are provided in the same number as the heat radiation fins 60 so as to correspond to the heat radiation fins 60 on a one-to-one basis. There may be less or more.

Further, in this embodiment, the radiating fins 60 are inclined with respect to the radial direction of the stage 10, and thus the radiating fins 60 and the heat pipes 70 intersect with each other as viewed from the rear side. The radiating fins 60 and the heat pipes 70 may overlap in the radial direction when viewed from the back. Alternatively, the heat radiating fins 60 and the heat pipe 70 may overlap with each other when viewed from the back side by inclining the heat pipe 70 with respect to the radial direction of the stage 10. The radiating fins 60 and the heat pipes 70 may be arranged so as to be shifted in the circumferential direction of the stage 70 instead of overlapping in the rear view. The heat pipe 70 may be curved in the rear view.
The radiating fins 60 may be arranged so as to be orthogonal to the heat pipe 70. In that case, a plurality of radiating fins 60 may be arranged side by side in the extending direction of the heat pipe 70, and more preferably. The heat dissipating fins 60 are arranged so as to be biased toward the condensation part 76 of the heat pipe 70.

According to this heat pipe built-in structure, the heat from the outer peripheral portion of the wafer 90 is transmitted to the working fluid of the evaporation portion 75 of the heat pipe 70 through the annular convex portion 12 of the stage 10. The liquid phase working fluid evaporates into a gas phase. As a result, heat from the outer peripheral portion of the wafer 90 can be sufficiently absorbed as latent heat, and it is possible to more reliably prevent heat from being transmitted to the inner portion of the wafer 90 from the outer peripheral portion.
The gas-phase working fluid generated in the evaporation unit 75 passes through the inside of the coiled member 73 and is sent to the condensing unit 76 where it is condensed and releases heat.
The working fluid condensed into a liquid phase in the condensing unit 76 is transmitted through the wick 72 by a capillary phenomenon and sent to the evaporating unit 75.

  In this way, the working fluid only circulates inside the heat pipe 70 and does not go back and forth between the stationary system and the rotating system. Therefore, the flow path structure is not complicated and there is no risk of liquid leakage. Further, resistance due to the seal pressure does not occur between the fixed system and the rotating system, the load on the rotating mechanism 50 can be reduced, and the required power can be reduced.

The present invention is not limited to the above embodiment, and various modifications can be made.
For example, the radiating fins 60 are not limited to a flat plate shape orthogonal to the stage back surface 10b, but may be inclined with respect to the stage back surface 10b, and the inclination angle with respect to the stage back surface 10b is a position in the radial direction of the stage 10. It may be a curved plate shape that changes according to the angle, may be a curved plate shape whose inclination increases or decreases as it moves downward from the stage back surface 10b, or from the outer peripheral side of the stage back surface 10b in the back view. Instead of extending linearly toward the center side, it may extend from the outer peripheral side of the stage back surface 10b toward the center side while drawing a curve.
The internal structure of the heat pipe 70 may be any as long as it can send a gas-phase working fluid from the evaporator 75 to the condenser 76 and can send a liquid-phase working fluid from the condenser 76 to the evaporator 75. The structure having the wick 72 and the coil-shaped member 73 is not limited, and various known heat pipe structures can be applied.
The unnecessary object 93 to be removed may be provided not on the outer periphery of the back surface of the wafer 90 but on the outer end surface of the wafer 90, or on the outer periphery of the back surface of the wafer 90, not only on the outer periphery of the back surface of the wafer 90. It may be provided across.
Unnecessary objects to be removed are not limited to fluorocarbon, but may be other organic substances or inorganic substances.
The state of the unnecessary material is not limited to the film, and may be a powder or the like.
In the case where the outer peripheral portion of the substrate can be treated only by heating, for example, unnecessary substances are removed only by heating, the reactive gas blowing portion is unnecessary.
The substrate is not limited to a wafer, and may be a substrate for a flat panel display such as a liquid crystal television or a plasma television.
The stage is not limited to a circle but may be a polygon such as a quadrangle.

  The present invention can be applied, for example, to remove unnecessary materials on the outer periphery of a substrate in the manufacture of a semiconductor substrate or a liquid crystal substrate.

It is a top view which shows schematic structure of the base-material outer periphery processing apparatus which concerns on 1st Embodiment of this invention. It is front sectional drawing which exaggerates the thickness of a wafer and a film | membrane of the said base material outer periphery processing apparatus. It is a bottom view of the said substrate outer periphery processing apparatus. It is a bottom view which shows the modification of the radiation fin of the stage back surface of a base-material outer periphery processing apparatus. It is a bottom view which shows embodiment of the base-material outer periphery processing apparatus provided with the heat pipe. It is front sectional drawing of the stage provided with the said heat pipe.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate outer periphery processing apparatus 10 Stage 10b Stage back surface 11 Central axis 12 Annular convex part 12a The upper surface (support surface) of an annular convex part
20 Processing head 21 Head body 31 Laser light source (radiant heat light source)
32 Optical fiber cable (heat ray transmission means)
33 Laser irradiation unit (radiant heater)
41 Reactive gas source 42 Gas supply path 43 Reactive gas nozzle (reactive gas outlet)
44 Suction nozzle 45 Exhaust path 46 Exhaust means 50 Rotating mechanism 60 Radiating fin 70 Heat pipe 71 Pipe body 72 Wick 73 Coiled member 75 Evaporating part 76 Condensing part 90 Silicon wafer 91 Insulating layer 91a Wiring pattern groove 93 Fluorocarbon film (unnecessary)
94 Wiring pattern

Claims (7)

In an apparatus for heating and processing the outer periphery of the substrate,
(A) a stage having a support surface that supports the base material in contact with a portion near the outer peripheral portion of the base material, and a back surface opposite to the support surface;
(B) a radiant heater that locally radiates radiant heat to the outer periphery of the substrate supported by the stage;
(C) a rotation mechanism for rotating the stage;
(D) radiating fins provided on the back surface of the stage so as to extend in a direction intersecting the circumferential direction of the back surface;
A substrate outer periphery processing apparatus comprising:   The base material outer periphery processing apparatus according to claim 1, wherein the heat dissipating fins are inclined in the circumferential direction as approaching a central portion of the back surface.   The base material outer periphery processing apparatus according to claim 2, wherein the radiating fin is inclined to a side opposite to a rotation direction by the rotation mechanism as it approaches a center portion of the back surface.   The substrate outer periphery processing apparatus according to any one of claims 1 to 3, further comprising a heat pipe provided on the stage including an evaporating unit for evaporating the working fluid and a condensing unit for condensing the working fluid. The heat pipe extends in a direction intersecting the circumferential direction of the stage;
The evaporator is disposed at an end of the heat pipe facing the outer peripheral side of the stage, and the condensing unit is disposed at an end of the heat pipe facing the center of the stage. The base-material outer periphery processing apparatus of Claim 4.   An annular convex portion is provided on the outer peripheral portion of the stage. The base material outer periphery processing apparatus according to claim 1, wherein a top surface of the annular convex portion serves as the support surface.   The base-material outer periphery processing apparatus in any one of Claims 1-6 further equipped with the reactive gas blowing part which sprays reactive gas to the local heating location by the said radiation heater.

Images