[go: up one dir, main page]

JP2007294261A - Organic electroluminescence device - Google Patents

Organic electroluminescence device Download PDF

Info

Publication number
JP2007294261A
JP2007294261A JP2006121328A JP2006121328A JP2007294261A JP 2007294261 A JP2007294261 A JP 2007294261A JP 2006121328 A JP2006121328 A JP 2006121328A JP 2006121328 A JP2006121328 A JP 2006121328A JP 2007294261 A JP2007294261 A JP 2007294261A
Authority
JP
Japan
Prior art keywords
light emitting
emitting layer
layer
anode
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006121328A
Other languages
Japanese (ja)
Other versions
JP4886352B2 (en
Inventor
Nobuhiro Ide
伸弘 井出
Takuya Komoda
卓哉 菰田
Junji Kido
淳二 城戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP2006121328A priority Critical patent/JP4886352B2/en
Publication of JP2007294261A publication Critical patent/JP2007294261A/en
Application granted granted Critical
Publication of JP4886352B2 publication Critical patent/JP4886352B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

【課題】発光層の膜厚を薄くして駆動電圧を低減させた場合にも、効率低下を抑制することのできる有機エレクトロルミネッセンス素子を提供する。
【解決手段】陽極1と陰極2の間に複数の発光層3を備えて形成される有機エレクトロルミネッセンス素子に関する。複数の材料の混合物で形成され、且つ主成分が異なる2つの隣り合う発光層3a,3bを備え、この隣り合う発光層3a,3bは、陽極1側に位置する発光層3aの電子移動度をホール移動度で除した値が、陰極2側に位置する発光層3bの電子移動度をホール移動度で除した値より大きい組み合わせからなる。
【選択図】図1
An organic electroluminescence element capable of suppressing a decrease in efficiency even when the driving voltage is reduced by reducing the thickness of a light emitting layer.
The present invention relates to an organic electroluminescence element formed with a plurality of light emitting layers 3 between an anode 1 and a cathode 2. Two adjacent light emitting layers 3a and 3b formed of a mixture of a plurality of materials and having different main components are provided, and the adjacent light emitting layers 3a and 3b have the electron mobility of the light emitting layer 3a located on the anode 1 side. The value divided by the hole mobility is a combination larger than the value obtained by dividing the electron mobility of the light emitting layer 3b located on the cathode 2 side by the hole mobility.
[Selection] Figure 1

Description

本発明は、フラットパネルディスプレイ、液晶表示機用バックライトや照明光源等に用いることのできる有機エレクトロルミネッセンス素子に関するものであり、詳しくは、複数の発光層を備え低電圧かつ高効率で発光する有機エレクトロルミネッセンス素子に関するものである。   The present invention relates to an organic electroluminescence element that can be used for a flat panel display, a backlight for a liquid crystal display, an illumination light source, and the like. Specifically, the organic electroluminescence element includes a plurality of light emitting layers and emits light with low voltage and high efficiency. The present invention relates to an electroluminescence element.

有機エレクトロルミネッセンス素子は、少なくとも一層の有機発光層を備えて形成されるものであり、素子への電流注入により有機発光層からの発光を得るようにしたものである。そして有機エレクトロルミネッセンス素子の効率は、一般に電力効率(lm/W)で議論されるが、それは発光効率(電流効率;cd/A)および電圧(V)の2つのパラメータに分割することができる。ここで発光効率(電流効率)は、通電した電流量に対する発光量を示す値であるため、電力効率が向上した、すなわち低消費電力の有機エレクトロルミネッセンス素子を得るための方法としては、発光効率を向上させる方法、および駆動電圧を低減する方法がある。   An organic electroluminescence element is formed with at least one organic light emitting layer, and emits light from the organic light emitting layer by injecting current into the element. The efficiency of the organic electroluminescence device is generally discussed in terms of power efficiency (lm / W), which can be divided into two parameters: light emission efficiency (current efficiency; cd / A) and voltage (V). Here, the light emission efficiency (current efficiency) is a value indicating the light emission amount with respect to the energized current amount. Therefore, as a method for obtaining an organic electroluminescence device with improved power efficiency, that is, low power consumption, the light emission efficiency is There are a method for improving and a method for reducing the driving voltage.

そして有機エレクトロルミネッセンス素子では、ホール輸送層、発光層、電子輸送層など、固有抵抗の高い材料群からなる層の膜厚を薄くし、かつ固有抵抗の小さなホール注入層、電子輸送層の割合を大きくすることで、駆動電圧が低減できることが知られている。しかしこの方法では、発光層を薄くするに伴って、駆動電圧は低減するが同時に発光効率が低下するトレードオフが起こる。これは、発光領域の広がりが発光層の膜厚み以上となり、発光領域が隣接する電子輸送材料、ホール輸送材料およびその他の領域にまで及び、発光効率の低い隣接層から低効率で発光もしくは消光してしまうことがその原因である。   In the organic electroluminescence device, the thickness of the layer made of a material group having a high specific resistance such as a hole transport layer, a light emitting layer, and an electron transport layer is made thin, and the ratio of the hole injection layer and the electron transport layer having a low specific resistance is reduced. It is known that the drive voltage can be reduced by increasing it. However, in this method, as the light emitting layer is made thinner, there is a trade-off in which the driving voltage is reduced but at the same time the light emission efficiency is lowered. This is because the light-emitting region extends beyond the thickness of the light-emitting layer, and the light-emitting region extends to the adjacent electron transport material, hole transport material, and other regions. The cause is that.

これを解決するために、発光層の陰極側にホールブロック層、および/または発光層の陽極側に電子ブロック層を挿入する(もしくはそれらの機能を併せて有する電子輸送層、ホール輸送層を設ける)方法が提案されている(例えば特許文献1等参照)。   In order to solve this problem, a hole blocking layer is inserted on the cathode side of the light emitting layer and / or an electron blocking layer is inserted on the anode side of the light emitting layer (or an electron transport layer and a hole transport layer having these functions are provided). ) Methods have been proposed (see, for example, Patent Document 1).

例えば、バソフェナントロリン誘導体等がホールブロック材料として、Ir(ppz)等が電子ブロック材料として知られている。しかし、ホールブロック層等を挿入することは素子の寿命特性に悪影響を及ぼすことが多い。これは、ホールブロック層等の挿入により、発光層とホールブロック層の界面近傍にホールが蓄積し、このために発光効率は一般に上昇するが、蓄積したキャリアは発光層のみならずホールブロック層にも侵入し、ホールブロック材料の酸化を同時に起こすためであると考えられる。過度の酸化は、有機エレクトロルミネッセンス素子を構成する材料にとって決して好ましいものではなく、結果として寿命特性に悪影響を与えることになるのである。
特開2002−260865号公報
For example, a bathophenanthroline derivative or the like is known as a hole block material, and Ir (ppz) 3 or the like is known as an electron block material. However, the insertion of a hole block layer or the like often adversely affects the lifetime characteristics of the device. This is because holes are accumulated near the interface between the light-emitting layer and the hole-blocking layer due to the insertion of the hole-blocking layer, etc., and the luminous efficiency generally increases, but the accumulated carriers are not only in the light-emitting layer but also in the hole-blocking layer. This is thought to be due to the intrusion and simultaneous oxidation of the hole block material. Excessive oxidation is never preferable for the material constituting the organic electroluminescence element, and as a result, the life characteristics are adversely affected.
JP 2002-260865 A

本発明は上記の点に鑑みてなされたものであり、発光層の膜厚を薄くして駆動電圧を低減させた場合にも、発光効率の低下を抑制することのできる有機エレクトロルミネッセンス素子を提供することを目的とするものである。   The present invention has been made in view of the above points, and provides an organic electroluminescence device capable of suppressing a decrease in luminous efficiency even when the driving voltage is reduced by reducing the thickness of the light emitting layer. It is intended to do.

本発明の請求項1に係る有機エレクトロルミネッセンス素子は、陽極と陰極の間に複数の発光層を備えて形成される有機エレクトロルミネッセンス素子において、複数の材料の混合物で形成され、且つ主成分が異なる2つの隣り合う発光層を備え、この隣り合う発光層は、陽極側に位置する発光層の電子移動度をホール移動度で除した値が、陰極側に位置する発光層の電子移動度をホール移動度で除した値より大きい組み合わせからなることを特徴とするものである。   The organic electroluminescent device according to claim 1 of the present invention is an organic electroluminescent device formed by providing a plurality of light emitting layers between an anode and a cathode, and is formed of a mixture of a plurality of materials and having different main components. Two adjacent light-emitting layers are provided. The value obtained by dividing the electron mobility of the light-emitting layer located on the anode side by the hole mobility represents the electron mobility of the light-emitting layer located on the cathode side as a hole. It is characterized by comprising a combination larger than the value divided by the mobility.

また請求項2の発明は、請求項1の、2つの隣り合う発光層において、陽極側に位置する発光層の電子移動度が、陰極側に位置する発光層の電子移動度より大きいことを特徴とするものである。   The invention of claim 2 is characterized in that, in two adjacent light emitting layers of claim 1, the electron mobility of the light emitting layer located on the anode side is larger than the electron mobility of the light emitting layer located on the cathode side. It is what.

また請求項3の発明は、請求項1又は2の、2つの隣り合う発光層において、陽極側に位置する発光層の膜厚が、陰極側に位置する発光層の膜厚より小さいことを特徴とするものである。   The invention of claim 3 is characterized in that, in two adjacent light emitting layers of claim 1 or 2, the thickness of the light emitting layer located on the anode side is smaller than the thickness of the light emitting layer located on the cathode side. It is what.

また請求項4の発明は、請求項1乃至3のいずれかの、2つの隣り合う発光層において、陽極側に位置する発光層の膜厚が100Å以下であることを特徴とするものである。   The invention of claim 4 is characterized in that, in any two adjacent light emitting layers of claims 1 to 3, the thickness of the light emitting layer located on the anode side is 100 mm or less.

また請求項5の発明は、請求項1乃至4のいずれかにおいて、発光層が3層以上であることを特徴とするものである。   A fifth aspect of the invention is characterized in that in any one of the first to fourth aspects, the light emitting layer has three or more layers.

また請求項6の発明は、請求項1乃至5のいずれかにおいて、複数の発光層が、補色関係にある2色の組み合わせで発光し、もしくはそれ以上の色数の組み合わせで発光し、得られる発光色が白色であることを特徴とするものである。   The invention of claim 6 is obtained in any one of claims 1 to 5, wherein the plurality of light emitting layers emit light by a combination of two colors having a complementary color relationship, or emit light by a combination of more colors. The emission color is white.

本発明によれば、陽極側に位置する発光層の電子移動度をホール移動度で除した値が、陰極側に位置する発光層の電子移動度をホール移動度で除した値より大きい組み合わせからなる2つの隣り合う発光層を備えることによって、発光層の膜厚を薄くして駆動電圧を低減させた場合にも、発光効率の低下を抑制することができるものである。   According to the present invention, the value obtained by dividing the electron mobility of the light emitting layer located on the anode side by the hole mobility is larger than the value obtained by dividing the electron mobility of the light emitting layer located on the cathode side by the hole mobility. By providing the two adjacent light emitting layers, even when the driving voltage is reduced by reducing the thickness of the light emitting layer, it is possible to suppress a decrease in light emission efficiency.

また、発光層の組み合わせを適切に行うことにより、単色発光素子もしくは白色発光素子のいずれにも適用可能な有機エレクトロルミネッセンス素子を提供することができるものである。   In addition, by appropriately combining the light emitting layers, it is possible to provide an organic electroluminescence element applicable to either a single color light emitting element or a white light emitting element.

以下、本発明を実施するための最良の形態を説明する。   Hereinafter, the best mode for carrying out the present invention will be described.

図1は陽極1と陰極2の間に有機発光層3を積層して形成される有機エレクトロルミネッセンス素子の構造の一例を示すものであり、透光性の基板4の表面に透明導電膜からなる陽極1を積層し、陽極1の上にホール注入層5及びホ−ル輸送層6を積層すると共に、その上に発光層3が積層してある。さらにこの発光層3の上に電子輸送層7及び電子注入層8を積層し、その上に陰極2が積層してある。以下、本構造を例として説明するが、この構造はあくまでも一例であり、例えば発光層3と電子輸送層7の間にホールブロック層を形成するなど、本発明の趣旨に反しない限り図1の構造に限定されるものではない。   FIG. 1 shows an example of the structure of an organic electroluminescence element formed by laminating an organic light emitting layer 3 between an anode 1 and a cathode 2, and a transparent conductive film is formed on the surface of a translucent substrate 4. The anode 1 is laminated, the hole injection layer 5 and the hole transport layer 6 are laminated on the anode 1, and the light emitting layer 3 is laminated thereon. Furthermore, the electron transport layer 7 and the electron injection layer 8 are laminated on the light emitting layer 3, and the cathode 2 is laminated thereon. Hereinafter, the present structure will be described as an example. However, this structure is merely an example. For example, a hole blocking layer is formed between the light emitting layer 3 and the electron transport layer 7, and the structure of FIG. The structure is not limited.

本発明では、この発光層3は複数層で形成してある。そして複数層の発光層3のうち、少なくとも一組の隣り合う発光層3a,3bは、複数の材料の混合物で形成してあり、且つこの2つの発光層3a,3bは主成分が異なるものである。例えば、隣り合うこの発光層3a,3bを、いわゆるホスト−ドーパントの混合物で形成する場合、各層のホスト材料が異なるが、ドーパント材料は同一である場合が挙げられる。また、各層を構成する複数の材料は、ホスト−ドーパントの2種のみでも良いし、その他補助的に機能する第三成分等を含んでもよい。さらに、いわゆるホスト−ドーパントの関係は、主成分のホスト材料が例えば80質量%以上と大部分を占める場合のみならず、主成分のホスト材料が50質量%強、副成分のドーパント材料が50質量%弱のように、ほぼ同程度の混合比でもかまわない。   In the present invention, the light emitting layer 3 is formed of a plurality of layers. Of the plurality of light emitting layers 3, at least one pair of adjacent light emitting layers 3a and 3b is formed of a mixture of a plurality of materials, and the two light emitting layers 3a and 3b have different main components. is there. For example, when the adjacent light emitting layers 3a and 3b are formed of a so-called host-dopant mixture, the host material of each layer is different, but the dopant material is the same. Further, the plurality of materials constituting each layer may include only two types of host-dopant, or may include a third component that functions in an auxiliary manner. Furthermore, the so-called host-dopant relationship is not limited to the case where the main component host material occupies most of, for example, 80% by mass or more, but the main component host material is more than 50% by mass, and the subcomponent dopant material is 50% by mass. The mixing ratio may be almost the same as a little less than%.

そして本発明の有機エレクトロルミネッセンス素子において、上記の隣り合う発光層3a,3bは、陽極1側に位置する発光層3aの電子移動度をホール移動度で除した値が、陰極2側に位置する発光層3bの電子移動度をホール移動度で除した値より,大きくなるようにした組み合わせで形成されるものである。隣り合う発光層3a,3bをこのような組み合わせで形成することによって、陽極1側の発光層3aと陰極2側の発光層3bとの界面近傍において、陽極1側から移動してきたホールと陰極2側から移動してきた電子とを効率よく再結合させることができるものであり、また両発光層3a,3bの界面近傍にキャリアが蓄積され難くなり、かつ発光領域が両発光層3a,3bの界面近傍にその分布の最大値を有するため、発光層3で再結合エネルギーを効率よく光に変換することができるものである。陽極1側に位置する発光層3aの電子移動度をホール移動度で除した値は、陰極2側に位置する発光層3bの電子移動度をホール移動度で除した値に対して、10%以上大きいことが望ましく、25%以上大きいことがより望ましい。   In the organic electroluminescence device of the present invention, the adjacent light emitting layers 3a and 3b are located on the cathode 2 side, which is obtained by dividing the electron mobility of the light emitting layer 3a located on the anode 1 side by the hole mobility. The light emitting layer 3b is formed in a combination that is larger than the value obtained by dividing the electron mobility by the hole mobility. By forming the adjacent light emitting layers 3a and 3b in such a combination, the hole and the cathode 2 that have moved from the anode 1 side in the vicinity of the interface between the light emitting layer 3a on the anode 1 side and the light emitting layer 3b on the cathode 2 side are formed. The electrons moving from the side can be efficiently recombined, carriers are not easily accumulated in the vicinity of the interface between the light emitting layers 3a and 3b, and the light emitting region is the interface between the light emitting layers 3a and 3b. Since it has the maximum value of the distribution in the vicinity, the recombination energy can be efficiently converted into light in the light emitting layer 3. The value obtained by dividing the electron mobility of the light emitting layer 3a located on the anode 1 side by the hole mobility is 10% of the value obtained by dividing the electron mobility of the light emitting layer 3b located on the cathode 2 side by the hole mobility. It is desirable to be larger than this, and it is more desirable to be larger than 25%.

ここで、発光層3の電子移動度やホール移動度とは、発光層3を構成する主成分の移動度よりもむしろ、複数の材料の混合物からなる層の移動度として定義される値であり、例えば混合物からなる層のタイムオブフライト測定、ダークインジェクション測定、電流−電圧特性からの計算等によって得られるものである。このため、一般にホール輸送性発光層を形成する材料を用いた場合にも、混合される副材料の影響によりその混合層の電子移動度が大きくなる場合もあり得る。尚、発光層3に於ける正負キャリアのバランスは、発光層3のホール移動度と電子移動度との両者の関係に依存するため、いずれかのキャリアの移動度の大小関係よりも、両者の比の大小によって概ね決定される。   Here, the electron mobility and hole mobility of the light emitting layer 3 are values defined as the mobility of a layer made of a mixture of a plurality of materials, rather than the mobility of the main component constituting the light emitting layer 3. For example, it is obtained by time-of-flight measurement, dark injection measurement, calculation from current-voltage characteristics, etc. of a layer made of a mixture. For this reason, even when a material for forming a hole transporting light emitting layer is used in general, the electron mobility of the mixed layer may increase due to the influence of the mixed auxiliary material. Note that the balance of positive and negative carriers in the light emitting layer 3 depends on the relationship between the hole mobility and the electron mobility of the light emitting layer 3, and therefore, the relationship between both of the carrier mobility is larger than the magnitude relationship of either carrier mobility. It is largely determined by the ratio.

素子構成は、発光層3が本発明に相当するものである限り、任意のものを用いることができる。また発光層3に使用できる材料としては、有機エレクトロルミネッセンス材料として知られる任意の材料が使用可能であるが、例えばアントラセン、ナフタレン、ピレン、テトラセン、コロネン、ペリレン、フタロペリレン、ナフタロペリレン、ジフェニルブタジエン、テトラフェニルブタジエン、クマリン、オキサジアゾール、ビスベンゾキサゾリン、ビススチリル、シクロペンタジエン、キノリン金属錯体、トリス(8−ヒドロキシキノリナート)アルミニウム錯体、トリス(4−メチル−8−キノリナート)アルミニウム錯体、トリス(5−フェニル−8−キノリナート)アルミニウム錯体、アミノキノリン金属錯体、ベンゾキノリン金属錯体、トリ−(p−ターフェニル−4−イル)アミン、1−アリール−2,5−ジ(2−チエニル)ピロール誘導体、ピラン、キナクリドン、ルブレン、ジスチリルベンゼン誘導体、ジスチリルアリーレン誘導体、ジスチリルアミン誘導体及び各種蛍光色素等が例としてあげられる。またこれらの化合物のうちから選択される発光材料を適宜混合して用いることも好ましい。また、前記化合物に代表される蛍光発光を生じる化合物のみならず、燐光発光を生じる燐光発光材料、およびそれらからなる部位を分子内の一部に有する化合物も好適に用いることができる。   Any element configuration may be used as long as the light emitting layer 3 corresponds to the present invention. As the material that can be used for the light emitting layer 3, any material known as an organic electroluminescence material can be used. For example, anthracene, naphthalene, pyrene, tetracene, coronene, perylene, phthaloperylene, naphthaloperylene, diphenylbutadiene, tetraphenyl Butadiene, coumarin, oxadiazole, bisbenzoxazoline, bisstyryl, cyclopentadiene, quinoline metal complex, tris (8-hydroxyquinolinato) aluminum complex, tris (4-methyl-8-quinolinato) aluminum complex, tris (5 -Phenyl-8-quinolinato) aluminum complex, aminoquinoline metal complex, benzoquinoline metal complex, tri- (p-terphenyl-4-yl) amine, 1-aryl-2,5-di (2-thieni ) Pyrrole derivatives, pyran, quinacridone, rubrene, distyrylbenzene derivatives, distyryl arylene derivatives, distyrylamine derivatives and various fluorescent pigments and the like as an example. Moreover, it is also preferable to mix and use the light emitting material selected from these compounds suitably. Moreover, not only the compound which produces | generates fluorescence emission represented by the said compound but the phosphorescence-emitting material which produces phosphorescence emission, and the compound which has the site | part which consists of them in one part in a molecule | numerator can also be used suitably.

また本発明の有機エレクトロルミネッセンス素子において、上記の隣り合う発光層3a,3bは、陽極1側に位置する発光層3aの電子移動度が、陰極2側に位置する発光層3bの電子移動度よりも大きいことが好ましい。このように陽極1側の発光層3aの電子移動度が大きいことによって、陽極1側に積極的に輸送が可能な素子構造とすることができ、陽極1側の発光層3aにおけるキャリアバランスをより向上させてこの発光層3aにおける発光の割合を高めることによって、有機エレクトロルミネッセンス素子全体の発光効率を向上させることが可能になるものである。陽極1側に位置する発光層3aの電子移動度は、陰極2側に位置する発光層3bの電子移動度よりも、2倍以上大きいことが好ましい。   Further, in the organic electroluminescence device of the present invention, the adjacent light emitting layers 3a and 3b have an electron mobility of the light emitting layer 3a located on the anode 1 side from the electron mobility of the light emitting layer 3b located on the cathode 2 side. Is also preferably large. As described above, since the electron mobility of the light emitting layer 3a on the anode 1 side is large, an element structure that can be positively transported to the anode 1 side can be obtained, and the carrier balance in the light emitting layer 3a on the anode 1 side is further improved. By improving the ratio of light emission in the light emitting layer 3a, it becomes possible to improve the light emission efficiency of the entire organic electroluminescence element. The electron mobility of the light emitting layer 3a located on the anode 1 side is preferably twice or more larger than the electron mobility of the light emitting layer 3b located on the cathode 2 side.

また本発明の有機エレクトロルミネッセンス素子において、上記の隣り合う発光層3a,3bは、陽極1側に位置する発光層3aの膜厚が、陰極2側に位置する発光層3bの膜厚より小さくなるように形成することが好ましい。このように陽極1側の発光層3aの膜厚を小さくすることにより、発光層3による駆動電圧の上昇を抑制することができ、また厚み方向に狭い範囲に発光領域を規定することによる効率の向上が見込まれるものである。陽極1側の発光層3aの厚みは、全発光層3に占める厚みの割合が約40%以下になるように設定するのが好ましい。   In the organic electroluminescence device of the present invention, in the adjacent light emitting layers 3a and 3b, the thickness of the light emitting layer 3a located on the anode 1 side is smaller than the film thickness of the light emitting layer 3b located on the cathode 2 side. It is preferable to form as follows. Thus, by reducing the film thickness of the light emitting layer 3a on the anode 1 side, it is possible to suppress an increase in driving voltage due to the light emitting layer 3, and to improve the efficiency by defining the light emitting region in a narrow range in the thickness direction. Improvement is expected. The thickness of the light emitting layer 3a on the anode 1 side is preferably set so that the ratio of the thickness to the total light emitting layer 3 is about 40% or less.

そしてさらに、この隣り合う発光層3a,3bのうち、陽極1側に位置する発光層3aの膜厚は100Å以下であることが好ましい。発光層3aの膜厚を100Å以下とすることにより、発光層3による駆動電圧の上昇を抑制することができ、また厚み方向に狭い範囲に発光領域を規定することによる効率の向上が見込まれるものである。発光層3aの膜厚の下限は特に限定されるものではないが、実用上10Å程度が膜厚の下限である。   Furthermore, the thickness of the light emitting layer 3a located on the anode 1 side among the adjacent light emitting layers 3a and 3b is preferably 100 mm or less. When the thickness of the light emitting layer 3a is 100 mm or less, an increase in driving voltage due to the light emitting layer 3 can be suppressed, and an improvement in efficiency can be expected by defining the light emitting region in a narrow range in the thickness direction. It is. The lower limit of the film thickness of the light emitting layer 3a is not particularly limited, but about 10 mm is practically the lower limit of the film thickness.

上記の各条件を満たすことにより、発光層3の厚みを小さくした際にも発光効率の低下を抑制することが可能になるものである。   By satisfying each of the above conditions, it is possible to suppress a decrease in luminous efficiency even when the thickness of the light emitting layer 3 is reduced.

本発明の有機エレクトロルミネッセンス素子の複数層からなる発光層3において、上記の組み合わせからなる態様の発光層3a,3bを少なくとも備えておればよく、この2つの隣り合う発光層3a,3bの他に、他の発光層3cが積層されていてもよい。   The light emitting layer 3 composed of a plurality of layers of the organic electroluminescence device of the present invention may be provided with at least the light emitting layers 3a and 3b having the above-described combination. In addition to the two adjacent light emitting layers 3a and 3b, Other light emitting layers 3c may be laminated.

すなわち、図2(a)(b)のように、上記の隣り合う2つの発光層3a,3bの陽極1側に、あるいは陰極2側に、さらに別の発光層3cを設けたり、図2(c)のように、陽極1側と陰極2側の両方に同一もしくは異なる組成からなる別の発光層3cを設けるようにしてもよい。具体的には、上記の組み合わせからなる隣り合う2つの発光層3a,3bを陽極1側から順に積層して青色発光層を形成し、さらにその陰極2側に橙色の発光層3cを形成する例(図2(a)の構成)や、陽極1側に橙色の発光層3cを形成し、さらにその陰極2側に上記の組み合わせからなる隣り合う2つの発光層3a,3bを積層して青色発光層を形成する例(図2(b)の構成)などを挙げることができる。また、本発明の組み合わせからなる隣り合う2つの発光層3a,3bを陽極1側から順に積層し、次いで陽極1側に位置する発光層3aと同じものをさらに積層して、合計3層からなる発光層3に形成することも例として挙げることができる。これらの例は、発光層3が全3層の場合であるが、発光層3の層数はそれ以上であってもよい。   That is, as shown in FIGS. 2A and 2B, another light emitting layer 3c may be provided on the anode 1 side or the cathode 2 side of the two adjacent light emitting layers 3a and 3b. As in c), another light emitting layer 3c having the same or different composition may be provided on both the anode 1 side and the cathode 2 side. Specifically, two adjacent light emitting layers 3a and 3b composed of the above combinations are sequentially stacked from the anode 1 side to form a blue light emitting layer, and further an orange light emitting layer 3c is formed on the cathode 2 side. (Structure of FIG. 2A) Or an orange light emitting layer 3c is formed on the anode 1 side, and two adjacent light emitting layers 3a and 3b made of the above combination are stacked on the cathode 2 side to emit blue light An example of forming a layer (configuration in FIG. 2B) can be given. Further, two adjacent light emitting layers 3a and 3b made of the combination of the present invention are laminated in order from the anode 1 side, and then the same light emitting layer 3a located on the anode 1 side is further laminated to form a total of three layers. Forming in the light emitting layer 3 can also be mentioned as an example. These examples are cases where the light emitting layer 3 has a total of three layers, but the number of layers of the light emitting layer 3 may be more than that.

また、本発明の有機エレクトロルミネッセンス素子は、発光層3の各層の発光色として補色関係にある2色を組み合わせたり、もしくは発光層3の各層をそれ以上の色数の組み合わせで発光させたりすることによって、有機エレクトロルミネッセンス素子から得られる発光色を白色にすることができるものである。   Moreover, the organic electroluminescent element of this invention combines two colors which are complementary colors as the luminescent color of each layer of the light emitting layer 3, or makes each layer of the light emitting layer 3 light-emit by the combination of the number of colors beyond it. Thus, the emission color obtained from the organic electroluminescence element can be made white.

上記のように形成される有機エレクトロルミネッセンス素子において、ホール輸送層6、ホール注入層5を構成する材料としては、ホールを輸送する能力を有し、陽極1からのホール注入効果を有するとともに、有機発光層3に対して優れたホール注入効果を有し、また電子のホール輸送層6への移動を防止し、かつ薄膜形成能力の優れた化合物を挙げることができる。ホール輸送層6もしくはホール注入層5を構成する材料の具体例を、その一部のみを例示すると、例えば、フタロシアニン誘導体、ナフタロシアニン誘導体、ポルフィリン誘導体、N,N’−ビス(3−メチルフェニル)−(1,1’−ビフェニル)−4,4’−ジアミン(TPD)や4,4’−ビス[N−(ナフチル)−N−フェニル−アミノ]ビフェニル(α−NPD)等の芳香族ジアミン化合物およびそれらの多量体に相当する物質、スチルベン誘導体、4,4’,4”−トリス(N−(3−メチルフェニル)N−フェニルアミノ)トリフェニルアミン(m−MTDATA)を代表例とするスターバーストアミン系化合物、4,4’−N,N’−ジカルバゾールビフェニル(CBP)及びポリビニルカルバゾール、ポリシラン、ポリエチレンジオキサイドチオフェン(PEDOT)等の高分子材料を挙げることができる。   In the organic electroluminescence device formed as described above, the material constituting the hole transport layer 6 and the hole injection layer 5 has the ability to transport holes, has the effect of injecting holes from the anode 1, and is organic. Examples thereof include a compound that has an excellent hole injection effect for the light emitting layer 3, prevents movement of electrons to the hole transport layer 6, and has an excellent thin film forming ability. Specific examples of the material constituting the hole transport layer 6 or the hole injection layer 5 are only a part of them. For example, phthalocyanine derivatives, naphthalocyanine derivatives, porphyrin derivatives, N, N′-bis (3-methylphenyl) -Aromatic diamines such as (1,1′-biphenyl) -4,4′-diamine (TPD) and 4,4′-bis [N- (naphthyl) -N-phenyl-amino] biphenyl (α-NPD) Compounds and substances corresponding to those multimers, stilbene derivatives, 4,4 ′, 4 ″ -tris (N- (3-methylphenyl) N-phenylamino) triphenylamine (m-MTDATA) are representative examples. Starburst amine compounds, 4,4′-N, N′-dicarbazole biphenyl (CBP) and polyvinyl carbazole, polysilane, polyester It can be given a polymer material such as range oxide thiophene (PEDOT).

また、電子輸送層7や電子注入層8を構成する材料としては、電子を輸送する能力を有し、陰極2からの電子注入効果を有するとともに、有機発光層3に対して優れた電子注入効果を有し、さらにホールの電子輸送層7への移動を防止し、かつ薄膜形成能力の優れた化合物を挙げることができる。電子輸送層7や電子注入層8を構成する材料の具体例を例示すると、フルオレン、バソフェナントロリン、バソクプロイン、アントラキノジメタン、ジフェノキノン、オキサゾール、オキサジアゾール、トリアゾール、イミダゾール、アントラキノジメタン、4,4’−N,N’−ジカルバゾールビフェニル(CBP)等やそれらの化合物、誘導体および多量体、金属錯体化合物もしくは含窒素五員環誘導体を挙げることができる。   Moreover, as a material which comprises the electron carrying layer 7 and the electron injection layer 8, it has the capability to convey an electron, and has the electron injection effect from the cathode 2, and the outstanding electron injection effect with respect to the organic light emitting layer 3 In addition, a compound that prevents migration of holes to the electron transport layer 7 and has an excellent thin film forming ability can be given. Specific examples of materials constituting the electron transport layer 7 and the electron injection layer 8 include fluorene, bathophenanthroline, bathocuproine, anthraquinodimethane, diphenoquinone, oxazole, oxadiazole, triazole, imidazole, anthraquinodimethane, 4 , 4′-N, N′-dicarbazole biphenyl (CBP) and the like, and their compounds, derivatives and multimers, metal complex compounds or nitrogen-containing five-membered ring derivatives.

上記金属錯体化合物として、具体的には、トリス(8−ヒドロキシキノリナート)アルミニウム、トリ(2−メチル−8−ヒドロキシキノリナート)アルミニウム、トリス(8−ヒドロキシキノリナート)ガリウム、ビス(10−ヒドロキシベンゾ[h]キノリナート)ベリリウム、ビス(10−ヒドロキシベンゾ[h]キノリナート)亜鉛、ビス(2−メチル−8−キノリナート)(o−クレゾラート)ガリウム、ビス(2−メチル−8−キノリナート)(1−ナフトラート)アルミニウム等が挙げられる。   Specific examples of the metal complex compound include tris (8-hydroxyquinolinato) aluminum, tri (2-methyl-8-hydroxyquinolinato) aluminum, tris (8-hydroxyquinolinato) gallium, bis ( 10-hydroxybenzo [h] quinolinato) beryllium, bis (10-hydroxybenzo [h] quinolinato) zinc, bis (2-methyl-8-quinolinato) (o-cresolate) gallium, bis (2-methyl-8-quinolinato) ) (1-naphtholate) aluminum and the like.

また、上記含窒素五員環誘導体としては、オキサゾール、チアゾール、オキサジアゾール、チアジアゾールもしくはトリアゾール誘導体が好ましく、具体的には、2,5−ビス(1−フェニル)−1,3,4−オキサゾール、2,5−ビス(1−フェニル)−1,3,4−チアゾール、2,5−ビス(1−フェニル)−1,3,4−オキサジアゾール、2−(4’−tert−ブチルフェニル)−5−(4”−ビフェニル)1,3,4−オキサジアゾール、2,5−ビス(1−ナフチル)−1,3,4−オキサジアゾール、1,4−ビス[2−(5−フェニルチアジアゾリル)]ベンゼン、2,5−ビス(1−ナフチル)−1,3,4−トリアゾール、3−(4−ビフェニルイル)−4−フェニル−5−(4−t−ブチルフェニル)−1,2,4−トリアゾール等が挙げられるがこの限りではない。   The nitrogen-containing five-membered ring derivative is preferably an oxazole, thiazole, oxadiazole, thiadiazole or triazole derivative, specifically 2,5-bis (1-phenyl) -1,3,4-oxazole. 2,5-bis (1-phenyl) -1,3,4-thiazole, 2,5-bis (1-phenyl) -1,3,4-oxadiazole, 2- (4′-tert-butyl) Phenyl) -5- (4 ″ -biphenyl) 1,3,4-oxadiazole, 2,5-bis (1-naphthyl) -1,3,4-oxadiazole, 1,4-bis [2- (5-phenylthiadiazolyl)] benzene, 2,5-bis (1-naphthyl) -1,3,4-triazole, 3- (4-biphenylyl) -4-phenyl-5- (4-t- Butylphenyl) -1,2 4- triazole, etc. but not limited thereto.

さらに、アルカリ金属、アルカリ土類金属、希土類を電子輸送層7や電子注入層8にドープしても良い。例えば、セシウムをバソフェナントロリンにモル比1:1の割合でドープして形成したものなどが例として挙げられる。   Further, the electron transport layer 7 or the electron injection layer 8 may be doped with alkali metal, alkaline earth metal, or rare earth. For example, a material formed by doping cesium with bathophenanthroline at a molar ratio of 1: 1 is exemplified.

またその他、有機エレクトロルミネッセンス素子を構成する部材である、積層された素子を保持する基板4や、陽極1、陰極2等には、従来から使用されているものをそのまま使用することができる。   In addition, conventionally used materials can be used as they are for the substrate 4 holding the stacked elements, the anode 1, the cathode 2, and the like, which are members constituting the organic electroluminescence element.

基板4は、基板4を通して光が出射される場合には光透過性を有するものであり、無色透明の他に、多少着色されているものであっても、すりガラス状のものであってもよい。例えば、ソーダライムガラスや無アルカリガラスなどの透明ガラス板や、ポリエステル、ポリオレフィン、ポリアミド、エポキシ等の樹脂、フッ素系樹脂等から任意の方法によって作製されたプラスチックフィルムやプラスチック板などを用いることができる。さらに、基板4内に基板4を形成する母剤と屈折率の異なる粒子、粉体、泡等を含有し、あるいは表面に形状を付与することによって、光拡散効果を有するものも使用可能である。また、基板4を通さずに光を射出させる場合には、基板4は必ずしも光透過性を有するものでなくてもかまわず、素子の発光特性、寿命特性等を損なわない限り、任意の材料で形成することができる。特に、通電時の素子の発熱による温度上昇を軽減するために、熱伝導性の高い基板4を使うこともできる。   The substrate 4 is light transmissive when light is emitted through the substrate 4, and may be slightly colored or ground glass in addition to being colorless and transparent. . For example, a transparent glass plate such as soda lime glass or non-alkali glass, a plastic film or a plastic plate produced by an arbitrary method from a resin such as polyester, polyolefin, polyamide, or epoxy, or a fluorine resin can be used. . Further, a material that has a light diffusion effect by containing particles, powder, bubbles, etc. having a refractive index different from that of the base material forming the substrate 4 in the substrate 4 or imparting a shape to the surface can be used. . Further, when light is emitted without passing through the substrate 4, the substrate 4 does not necessarily have to be light transmissive, and may be made of any material as long as the light emission characteristics, life characteristics, etc. of the element are not impaired. Can be formed. In particular, the substrate 4 having high thermal conductivity can be used in order to reduce a temperature rise due to heat generation of the element during energization.

また陽極1は、素子中にホールを注入するための電極であり、仕事関数の大きい金属、合金、電気伝導性化合物、あるいはこれらの混合物からなる電極材料を用いることが好ましく、仕事関数が4eV以上のものを用いるのがよい。このような陽極1の材料としては、例えば、金などの金属、CuI、ITO(インジウム−スズ酸化物)、SnO、ZnO、IZO(インジウム−亜鉛酸化物)等の導電性透明材料が挙げられる。陽極1は、例えば、これらの電極材料を、基板4の表面に真空蒸着法やスパッタリング法等の方法により薄膜に形成することによって作製することができる。また、有機発光層3における発光を陽極1を透過させて外部に照射するためには、陽極1の光透過率を70%以上にすることが好ましい。さらに、陽極1のシート抵抗は数百Ω/□以下とすることが好ましく、特に好ましくは100Ω/□以下とするものである。ここで、陽極1の膜厚は、陽極1の光透過率、シート抵抗等の特性を上記のように制御するために、材料により異なるが、500nm以下、好ましくは10〜200nmの範囲に設定するのがよい。 The anode 1 is an electrode for injecting holes into the element, and it is preferable to use an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a large work function, and the work function is 4 eV or more. It is better to use one. As a material for such an anode 1, for example, metal such as gold, CuI, ITO (indium - tin oxide), SnO 2, ZnO, IZO (indium - zinc oxide) conductive transparent material, and the like . The anode 1 can be produced, for example, by forming these electrode materials into a thin film on the surface of the substrate 4 by a method such as vacuum deposition or sputtering. In order to transmit light emitted from the organic light emitting layer 3 through the anode 1 and irradiate the light to the outside, the light transmittance of the anode 1 is preferably set to 70% or more. Further, the sheet resistance of the anode 1 is preferably several hundred Ω / □ or less, and particularly preferably 100 Ω / □ or less. Here, the film thickness of the anode 1 varies depending on the material in order to control the light transmittance, sheet resistance, and other characteristics of the anode 1 as described above, but is set to a range of 500 nm or less, preferably 10 to 200 nm. It is good.

また、陰極2は、有機発光層3中に電子を注入するための電極であり、仕事関数の小さい金属、合金、電気伝導性化合物及びこれらの混合物からなる電極材料を用いることが好ましく、仕事関数が5eV以下のものであることが好ましい。このような陰極2の電極材料としては、アルカリ金属、アルカリ金属のハロゲン化物、アルカリ金属の酸化物、アルカリ土類金属等、およびこれらと他の金属との合金、例えばナトリウム、ナトリウム−カリウム合金、リチウム、マグネシウム、マグネシウム−銀混合物、マグネシウム−インジウム混合物、アルミニウム−リチウム合金、Al/LiF混合物を例として挙げることができる。また、アルミニウム、Al/Al混合物なども使用可能である。また、アルカリ金属の酸化物、アルカリ金属のハロゲン化物、あるいは金属酸化物を陰極2の下地として用い、さらに金属等の導電材料を1層以上積層して用いてもよい。例えば、アルカリ金属/Alの積層、アルカリ金属のハロゲン化物/アルカリ土類金属/Alの積層、アルカリ金属の酸化物/Alの積層などが例として挙げられる。また、ITO、IZOなどに代表される透明電極を用い、陰極2側から光を取り出す構成にしてもよい。さらに、陰極1界面の有機物層にリチウム、ナトリウム、セシウム、カルシウム等のアルカリ金属、アルカリ土類金属をドープしても良い。 Further, the cathode 2 is an electrode for injecting electrons into the organic light emitting layer 3, and it is preferable to use an electrode material made of a metal, an alloy, an electrically conductive compound and a mixture thereof having a small work function. Is preferably 5 eV or less. Examples of the electrode material for the cathode 2 include alkali metals, alkali metal halides, alkali metal oxides, alkaline earth metals and the like, and alloys thereof with other metals such as sodium, sodium-potassium alloys, Examples include lithium, magnesium, a magnesium-silver mixture, a magnesium-indium mixture, an aluminum-lithium alloy, and an Al / LiF mixture. Aluminum, Al / Al 2 O 3 mixture, etc. can also be used. Alternatively, an alkali metal oxide, an alkali metal halide, or a metal oxide may be used as the base of the cathode 2, and one or more conductive materials such as metals may be stacked and used. For example, an alkali metal / Al laminate, an alkali metal halide / alkaline earth metal / Al laminate, an alkali metal oxide / Al laminate, and the like can be given as examples. Further, a transparent electrode typified by ITO, IZO or the like may be used to extract light from the cathode 2 side. Furthermore, the organic layer at the interface of the cathode 1 may be doped with an alkali metal such as lithium, sodium, cesium, or calcium, or an alkaline earth metal.

この陰極2は、例えば、これらの電極材料を真空蒸着法やスパッタリング法等の方法により、薄膜に形成することによって作製することができる。有機発光層3における発光を陽極1側に照射するためには、陰極2の光透過率を10%以下にすることが好ましい。また逆に、陰極2を透明電極として陰極2側から発光を取り出す場合には、陰極2の光透過率を70%以上にすることが好ましい。この場合の陰極2の膜厚は、このように陰極2の光透過率等の特性を制御するために、材料により異なるが、通常500nm以下、好ましくは100〜200nmの範囲とするのがよい。   For example, the cathode 2 can be produced by forming these electrode materials into a thin film by a method such as a vacuum deposition method or a sputtering method. In order to irradiate the light emitted from the organic light emitting layer 3 to the anode 1 side, the light transmittance of the cathode 2 is preferably 10% or less. Conversely, when light emission is extracted from the cathode 2 side using the cathode 2 as a transparent electrode, the light transmittance of the cathode 2 is preferably 70% or more. In this case, the film thickness of the cathode 2 varies depending on the material in order to control the characteristics such as the light transmittance of the cathode 2 in this way, but it is usually 500 nm or less, preferably 100 to 200 nm.

尚、有機エレクトロルミネッセンス素子において、各部材、構造を本発明の趣旨を損ねない範囲で併用することが可能である。   In addition, in an organic electroluminescent element, it is possible to use together each member and structure in the range which does not impair the meaning of this invention.

次に、本発明を実施例によって具体的に説明する。   Next, the present invention will be specifically described with reference to examples.

(実施例1)
基板4として、厚み1100ÅのITOを成膜して陽極1が形成された、厚み0.7mmのガラス基板を用いた。ITOのシート抵抗は、約12Ω/□である。これを洗剤、イオン交換水、アセトンで各10分間超音波洗浄をした後、IPA(イソプロピルアルコール)で蒸気洗浄し、次いで乾燥した。
Example 1
As the substrate 4, a glass substrate having a thickness of 0.7 mm in which an anode 1 was formed by forming an ITO film having a thickness of 1100 mm was used. The sheet resistance of ITO is about 12Ω / □. This was subjected to ultrasonic cleaning with a detergent, ion-exchanged water and acetone for 10 minutes each, then steam cleaned with IPA (isopropyl alcohol), and then dried.

次に、この基板4を真空蒸着装置にセットし、1×10−4Pa以下の減圧雰囲気下で、陽極1の上に4,4’−ビス[N−(ナフチル)−N−フェニル−アミノ]ビフェニル(α−NPD)と酸化バナジウムの共蒸着体(モル比1:1)を600Åの厚みで蒸着してホール注入層5を形成した。次にこの上にα−NPDを200Åの厚みで蒸着してホール輸送層6を形成した。 Next, this substrate 4 was set in a vacuum deposition apparatus, and 4,4′-bis [N- (naphthyl) -N-phenyl-amino was deposited on the anode 1 under a reduced pressure atmosphere of 1 × 10 −4 Pa or less. The hole injection layer 5 was formed by vapor-depositing a biphenyl (α-NPD) and vanadium oxide co-evaporated body (molar ratio 1: 1) in a thickness of 600 mm. Next, α-NPD was deposited thereon to a thickness of 200 mm to form a hole transport layer 6.

次いで、ホール輸送層6の上に、陽極1側の発光層3aとしてDPYFL(式1)にsty−NPD(式2)を4%共蒸着した層を25Åの厚みで形成し、さらにこの上に陰極2側の発光層3bとしてTBADN(式3)にsty−NPDを4%共蒸着した層を175Åの厚みで形成し、2層の積層からなる発光層3を形成した。   Next, a layer in which 4% of sty-NPD (formula 2) is co-deposited on DPYFL (formula 1) is formed as a light emitting layer 3a on the anode 1 side on the hole transport layer 6 with a thickness of 25 mm, and further on this As the light-emitting layer 3b on the cathode 2 side, a layer in which 4% of sty-NPD was co-evaporated on TBADN (formula 3) was formed to a thickness of 175 mm to form a light-emitting layer 3 composed of two layers.

次に発光層3の上にバソフェナントロリン(BCP:株式会社同仁化学研究所製)を50Åの厚みで蒸着して電子輸送層7を形成し、さらにBCPとCs(セシウム)を、モル比1:1の割合で200Å厚に共蒸着して電子注入層8を形成した。   Next, bathophenanthroline (BCP: manufactured by Dojindo Laboratories Co., Ltd.) is deposited on the light emitting layer 3 to a thickness of 50 mm to form the electron transport layer 7, and BCP and Cs (cesium) are further added at a molar ratio of 1: The electron injection layer 8 was formed by co-evaporation at a rate of 1 to a thickness of 200 mm.

続いて、電子注入層8の上にアルミニウムを4Å/sの蒸着速度で800Å厚に蒸着して陰極2形成し、図1の構成の有機エレクトロルミネッセンス素子を得た。   Subsequently, aluminum was vapor-deposited on the electron injection layer 8 at a vapor deposition rate of 4 mm / s to a thickness of 800 mm to form the cathode 2, thereby obtaining an organic electroluminescence device having the configuration shown in FIG. 1.

尚、ホール移動度および電子移動度をタイムオブフライト法や電流−電圧特性からの計算により算出したところ、陽極1側の発光層3aを形成するDPYFL:sty−NPDは、ホール移動度が2×10−4cm/Vs、電子移動度が1×10−3cm/Vsであり、この発光層3aの電子移動度をホール移動度で除した値は5であった。また陰極2側の発光層3bを形成するTBADN:sty−NPDは、ホール移動度が8×10−5cm/Vs、電子移動度が1×10−4cm/Vsであり、この発光層3bの電子移動度をホール移動度で除した値は1.25であった。 The hole mobility and electron mobility were calculated by a time-of-flight method or calculation from current-voltage characteristics. As a result, DPYFL: sty-NPD forming the light emitting layer 3a on the anode 1 side has a hole mobility of 2 ×. 10 −4 cm 2 / Vs, the electron mobility was 1 × 10 −3 cm 2 / Vs, and the value obtained by dividing the electron mobility of the light emitting layer 3 a by the hole mobility was 5. TBADN: sty-NPD forming the light emitting layer 3b on the cathode 2 side has a hole mobility of 8 × 10 −5 cm 2 / Vs and an electron mobility of 1 × 10 −4 cm 2 / Vs. The value obtained by dividing the electron mobility of the layer 3b by the hole mobility was 1.25.

Figure 2007294261
Figure 2007294261

(実施例2)
陽極1側の発光層3aを厚み175Åで形成し、陰極2側の発光層3bを厚み25Åで形成し、2層の積層からなる発光層3を形成するようにした他は、実施例1と同様にして、図1の構成の有機エレクトロルミネッセンス素子を得た。
(Example 2)
Except that the light-emitting layer 3a on the anode 1 side is formed with a thickness of 175 mm, the light-emitting layer 3b on the cathode 2 side is formed with a thickness of 25 mm, and the light-emitting layer 3 composed of two layers is formed. Similarly, an organic electroluminescence element having the configuration of FIG. 1 was obtained.

(比較例1)
発光層3を、TBADNにsty−NPDを4%共蒸着した厚み200Åの1層で形成するようにした他は、実施例1と同様にして、有機エレクトロルミネッセンス素子を得た。
(Comparative Example 1)
An organic electroluminescence device was obtained in the same manner as in Example 1 except that the light emitting layer 3 was formed as a single layer having a thickness of 200 mm in which 4% of sty-NPD was co-deposited on TBADN.

(比較例2)
陽極1側の発光層3aを、TBADNにsty−NPDを4%共蒸着した厚み175Åの層で形成し、陰極2側の発光層3bを、DPYFLにsty−NPDを4%共蒸着した厚み25Åの層で形成するようにした他は、実施例1と同様にして、有機エレクトロルミネッセンス素子を得た。
(Comparative Example 2)
The light emitting layer 3a on the anode 1 side is formed as a layer having a thickness of 175 mm by co-depositing 4% sty-NPD on TBADN, and the light emitting layer 3b on the cathode 2 side is formed by co-depositing 4% sty-NPD on DPYFL with a thickness of 25 mm. An organic electroluminescent device was obtained in the same manner as in Example 1 except that the above layer was formed.

(比較例3)
発光層3を、TBADNにsty−NPDを4%共蒸着した厚み500Åの1層で形成するようにした他は、実施例1と同様にして、有機エレクトロルミネッセンス素子を得た。
(Comparative Example 3)
An organic electroluminescence device was obtained in the same manner as in Example 1 except that the light emitting layer 3 was formed as one layer having a thickness of 500 mm in which 4% of sty-NPD was co-deposited on TBADN.

(実施例3)
ホール輸送層6の上に、黄色の発光層3cとして、TBADNにルブレンを0.5%ドープした層を50Åの厚みで形成した。そしてこの黄色発光層3cの上に、陽極1側の発光層3aとしてDPYFLにsty−NPDを4%共蒸着した層を25Å厚で形成し、さらに陰極2側の発光層3bとしてTBADNにsty−NPDを4%共蒸着した層を175Åの厚みで形成し、合計3層の積層からなる発光層3を形成した。これら以外は実施例1と同様にして、図2(b)の構成の有機エレクトロルミネッセンス素子を得た。
(Example 3)
On the hole transport layer 6, as a yellow light emitting layer 3c, a layer in which 0.5% of rubrene was doped into TBADN was formed to a thickness of 50 mm. On the yellow light emitting layer 3c, a layer of 4% co-deposited sty-NPD on DPYFL is formed as a light emitting layer 3a on the anode 1 side with a thickness of 25 mm. Further, a light emitting layer 3b on the cathode 2 side is formed on TBADN with a sty- A layer in which 4% of NPD was co-evaporated was formed to a thickness of 175 mm, and the light emitting layer 3 consisting of a total of three layers was formed. Except these, it carried out similarly to Example 1, and obtained the organic electroluminescent element of the structure of FIG.2 (b).

(比較例4)
ホール輸送層6の上に、黄色の発光層3cとして、TBADNにルブレンを0.5%ドープした層を50Åの厚みで形成した。そしてこの黄色発光層3cの上に、発光層3bとしてTBADNにsty−NPDを4%共蒸着して200Å厚の発光層3bを形成し、2層の積層からなる発光層3を形成した。これら以外は実施例1と同様にして、有機エレクトロルミネッセンス素子を得た。
(Comparative Example 4)
On the hole transport layer 6, as a yellow light emitting layer 3c, a layer in which 0.5% of rubrene was doped into TBADN was formed to a thickness of 50 mm. Then, 4% of sty-NPD was co-evaporated on TBADN as a light emitting layer 3b on this yellow light emitting layer 3c to form a 200 mm thick light emitting layer 3b, and a light emitting layer 3 consisting of two layers was formed. Except these, it carried out similarly to Example 1, and obtained the organic electroluminescent element.

(実施例4)
陽極1側の発光層3aを、TBADNにTBP(式4)を4%共蒸着した厚み50Åの層で形成し、陰極2側の発光層3bを、CBP(式5)にTBPを4%共蒸着した厚み150Åの層で形成し、2層の積層からなる発光層3を形成するようにした他は、実施例1と同様にして、図1の構成の有機エレクトロルミネッセンス素子を得た。
Example 4
The light emitting layer 3a on the anode 1 side is formed as a 50 mm thick layer obtained by co-evaporating 4% of TBP (Formula 4) on TBADN, and the light emitting layer 3b on the cathode 2 side is formed of 4% TBP on CBP (Formula 5). An organic electroluminescent device having the structure shown in FIG. 1 was obtained in the same manner as in Example 1 except that the light-emitting layer 3 formed of a two-layered laminate was formed with a deposited layer having a thickness of 150 mm.

尚、ホール移動度および電子移動度をタイムオブフライト法や電流−電圧特性からの計算により算出したところ、陽極1側の発光層3aを形成するTBADNにTBPは、ホール移動度が9×10−5cm/Vs、電子移動度が1×10−4cm/Vsであり、この発光層3aの電子移動度をホール移動度で除した値は1.1であった。また陰極2側の発光層3bを形成するCBP:TBPは、ホール移動度が2×10−3cm/Vs、電子移動度が3×10−4cm/Vsであり、この発光層3bの電子移動度をホール移動度で除した値は0.15であった。 The hole mobility and the electron mobility were calculated by a time-of-flight method or calculation from current-voltage characteristics. As a result, TBP has a hole mobility of 9 × 10 in TBADN forming the light emitting layer 3a on the anode 1 side. The value was 5 cm 2 / Vs, the electron mobility was 1 × 10 −4 cm 2 / Vs, and the value obtained by dividing the electron mobility of the light emitting layer 3a by the hole mobility was 1.1. CBP: TBP forming the light emitting layer 3b on the cathode 2 side has a hole mobility of 2 × 10 −3 cm 2 / Vs and an electron mobility of 3 × 10 −4 cm 2 / Vs, and this light emitting layer 3b The value obtained by dividing the electron mobility by the hole mobility was 0.15.

Figure 2007294261
Figure 2007294261

(比較例5)
陽極1側の発光層3aを、CBPにTBPを4%共蒸着した厚み50Åの層で形成し、陰極2側の発光層3bを、TBANDにTBPを4%共蒸着した厚み150Åの層で形成するようにした他は、実施例1と同様にして、有機エレクトロルミネッセンス素子を得た。
(Comparative Example 5)
The light emitting layer 3a on the anode 1 side is formed as a 50 mm thick layer of 4% TBP co-deposited on CBP, and the light emitting layer 3b on the cathode 2 side is formed as a 150 mm thick layer co-deposited with 4% TBP on TBAND. An organic electroluminescence device was obtained in the same manner as in Example 1 except that this was done.

上記のように実施例1〜4及び比較例1〜5で得られた有機エレクトロルミネッセンス素子を電源(KEYTHLEY2400)に接続し、10mA/cmで定電流駆動した際の輝度・電圧値を測定した。なお、輝度評価にはトプコン株式会社製「BM−9」を使用した。結果を表1に示す。 As described above, the organic electroluminescence elements obtained in Examples 1 to 4 and Comparative Examples 1 to 5 were connected to a power source (KEYTHLEY 2400), and the luminance and voltage values were measured when driven at a constant current of 10 mA / cm 2 . . For luminance evaluation, “BM-9” manufactured by Topcon Corporation was used. The results are shown in Table 1.

Figure 2007294261
Figure 2007294261

表1にみられるように、各実施例の素子は、発光輝度すなわち電流効率が高く、同時に駆動電圧が低いものであった。一方、比較例の素子は、電圧は低いものの効率も低い結果(特に発光層の膜厚が薄い比較例5)となり、また効率は高いものの電圧も高い結果(特に発光層の膜厚が厚い比較例3)となり、実施例の素子の特性に対して悪い特性であった。   As can be seen from Table 1, the elements of each example had high light emission luminance, that is, current efficiency, and at the same time low driving voltage. On the other hand, the device of the comparative example resulted in low voltage but low efficiency (particularly comparative example 5 in which the light emitting layer was thin), and high efficiency but also high voltage (particularly in comparison with the thick light emitting layer). Example 3), which is a bad characteristic with respect to the characteristics of the device of the example.

本発明の有機エレクロトルミネッセンス素子の層構成の一例を示す概略図である。It is the schematic which shows an example of the layer structure of the organic electroluminescent element of this invention. (a)(b)(c)は同上の層構成の他例を示す概略図である。(A) (b) (c) is the schematic which shows the other example of a layer structure same as the above.

符号の説明Explanation of symbols

1 陽極
2 陰極
3 発光層
1 Anode 2 Cathode 3 Light emitting layer

Claims (6)

陽極と陰極の間に複数層の発光層を備えて形成される有機エレクトロルミネッセンス素子において、複数の材料の混合物で形成され、且つ主成分が異なる2つの隣り合う発光層を備え、この隣り合う発光層は、陽極側に位置する発光層の電子移動度をホール移動度で除した値が、陰極側に位置する発光層の電子移動度をホール移動度で除した値より大きい組み合わせからなることを特徴とする有機エレクトロルミネッセンス素子。   In an organic electroluminescence device formed with a plurality of light emitting layers between an anode and a cathode, the light emitting device has two adjacent light emitting layers formed of a mixture of a plurality of materials and having different main components. The layer has a combination in which the value obtained by dividing the electron mobility of the light emitting layer located on the anode side by the hole mobility is larger than the value obtained by dividing the electron mobility of the light emitting layer located on the cathode side by the hole mobility. An organic electroluminescence device characterized. 上記の2つの隣り合う発光層において、陽極側に位置する発光層の電子移動度が、陰極側に位置する発光層の電子移動度より大きいことを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子。   2. The organic electroluminescence according to claim 1, wherein, in the two adjacent light emitting layers, the electron mobility of the light emitting layer located on the anode side is larger than the electron mobility of the light emitting layer located on the cathode side. element. 上記の2つの隣り合う発光層において、陽極側に位置する発光層の膜厚が、陰極側に位置する発光層の膜厚より小さいことを特徴とする請求項1又は2に記載の有機エレクトロルミネッセンス素子。   3. The organic electroluminescence according to claim 1, wherein in the two adjacent light emitting layers, the thickness of the light emitting layer located on the anode side is smaller than the thickness of the light emitting layer located on the cathode side. element. 上記の2つの隣り合う発光層において、陽極側に位置する発光層の膜厚が100Å以下であることを特徴とする請求項1乃至3のいずれかに記載の有機エレクトロルミネッセンス素子。   4. The organic electroluminescent element according to claim 1, wherein in the two adjacent light emitting layers, the thickness of the light emitting layer located on the anode side is 100 mm or less. 5. 発光層が3層以上であることを特徴とする請求項1乃至4のいずれかに記載の有機エレクトロルミネッセンス素子。   The organic electroluminescent element according to claim 1, wherein the light emitting layer has three or more layers. 複数の発光層が、補色関係にある2色の組み合わせで発光し、もしくはそれ以上の色数の組み合わせで発光し、得られる発光色が白色であることを特徴とする請求項1乃至5のいずれかに記載の有機エレクトロルミネッセンス素子。   6. The light emitting layer according to claim 1, wherein the plurality of light emitting layers emit light in a combination of two colors having a complementary color relationship, or emit light in a combination of more colors, and the obtained emission color is white. An organic electroluminescence device according to any one of the above.
JP2006121328A 2006-04-25 2006-04-25 Organic electroluminescence device Active JP4886352B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006121328A JP4886352B2 (en) 2006-04-25 2006-04-25 Organic electroluminescence device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006121328A JP4886352B2 (en) 2006-04-25 2006-04-25 Organic electroluminescence device

Publications (2)

Publication Number Publication Date
JP2007294261A true JP2007294261A (en) 2007-11-08
JP4886352B2 JP4886352B2 (en) 2012-02-29

Family

ID=38764669

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006121328A Active JP4886352B2 (en) 2006-04-25 2006-04-25 Organic electroluminescence device

Country Status (1)

Country Link
JP (1) JP4886352B2 (en)

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009069740A1 (en) * 2007-11-30 2009-06-04 Tokyo Electron Limited Film forming device control method, film forming method, film forming device, organic el electronic device, and recording medium storing its control program
WO2010110034A1 (en) * 2009-03-25 2010-09-30 日本精機株式会社 Organic el element
WO2010137733A1 (en) 2009-05-29 2010-12-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and method for manufacturing the same
WO2011027653A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and method for manufacturing the same
WO2011052645A1 (en) * 2009-10-27 2011-05-05 大日本印刷株式会社 Nanoparticle containing transition metal compound, method for producing same, ink for hole injection/transport layer, device having hole injection/transport layer, and method for producing same
WO2011052648A1 (en) * 2009-10-27 2011-05-05 大日本印刷株式会社 Device having hole injection/transport layer, method for producing same, and ink for forming hole injection/transport layer
WO2012070330A1 (en) * 2010-11-25 2012-05-31 日本精機株式会社 Organic el element
JP2013509710A (en) * 2009-10-28 2013-03-14 ルナレック アクチエボラグ Luminescent electrochemical device, system including the device, and use of the device
US8486543B2 (en) 2009-12-01 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
JP2015201496A (en) * 2014-04-04 2015-11-12 セイコーエプソン株式会社 Light-emitting element, light-emitting device, display device and electronic apparatus
CN110010773A (en) * 2018-01-05 2019-07-12 固安鼎材科技有限公司 A kind of luminescent layer and organic electroluminescence device adjusting carrier mobility
KR20220099948A (en) 2019-11-08 2022-07-14 이데미쓰 고산 가부시키가이샤 Organic electroluminescent devices and electronic devices
WO2022191299A1 (en) * 2021-03-10 2022-09-15 出光興産株式会社 Organic electroluminescent element and electronic device
KR20220141780A (en) 2020-02-14 2022-10-20 이데미쓰 고산 가부시키가이샤 Organic electroluminescent devices and electronic devices
US11489128B1 (en) 2019-11-08 2022-11-01 Idemitsu Kosan Co., Ltd. Organic electroluminescent element emitting light at high luminous effiency and electronic device
WO2022230843A1 (en) * 2021-04-26 2022-11-03 出光興産株式会社 Organic electroluminescent element, organic electroluminescent display apparatus, and electronic device
US11575087B1 (en) 2020-12-25 2023-02-07 Idemitsu Kosan Co., Ltd. Organic electroluminescence device, light emitting device, organic electroluminescence display device and electronic device
KR20230027191A (en) 2020-06-19 2023-02-27 이데미쓰 고산 가부시키가이샤 Organic electroluminescent elements and electronic devices
KR20230117384A (en) 2020-12-02 2023-08-08 이데미쓰 고산 가부시키가이샤 Organic electroluminescent elements and electronic devices
KR20230125260A (en) 2020-12-25 2023-08-29 이데미쓰 고산 가부시키가이샤 Organic electroluminescent elements and electronic devices
KR20230134557A (en) 2021-01-21 2023-09-21 이데미쓰 고산 가부시키가이샤 Organic electroluminescent devices and electronic devices
KR20240001701A (en) 2021-04-26 2024-01-03 이데미쓰 고산 가부시키가이샤 Organic electroluminescent devices, organic electroluminescent display devices and electronic devices
EP4395515A1 (en) * 2022-12-29 2024-07-03 LG Display Co., Ltd. Organic light emitting diode and organic light emitting device including the same
US12369490B2 (en) 2021-01-13 2025-07-22 Idemitsu Kosan Co., Ltd. Organic electroluminescent element, organic electroluminescent display device, and electronic device
WO2025231863A1 (en) * 2024-05-10 2025-11-13 京东方科技集团股份有限公司 Display panel and display device
US12538638B2 (en) 2020-12-25 2026-01-27 Idemitsu Kosan Co., Ltd. Organic electroluminescent element and electronic device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005038763A (en) * 2003-07-17 2005-02-10 Nippon Seiki Co Ltd Organic el panel
JP2005150084A (en) * 2003-10-24 2005-06-09 Pentax Corp White organic electroluminescence device
WO2005091684A1 (en) * 2004-03-19 2005-09-29 Idemitsu Kosan Co., Ltd. Organic electroluminescent device
WO2005099313A1 (en) * 2004-04-02 2005-10-20 Idemitsu Kosan Co., Ltd. Organic electroluminescence element having two electroluminescent layers through electron barrier layer
JP2006013295A (en) * 2004-06-29 2006-01-12 Nippon Seiki Co Ltd Organic el element
WO2006015567A1 (en) * 2004-08-13 2006-02-16 Novaled Ag Layer arrangement for a light-emitting component

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005038763A (en) * 2003-07-17 2005-02-10 Nippon Seiki Co Ltd Organic el panel
JP2005150084A (en) * 2003-10-24 2005-06-09 Pentax Corp White organic electroluminescence device
WO2005091684A1 (en) * 2004-03-19 2005-09-29 Idemitsu Kosan Co., Ltd. Organic electroluminescent device
WO2005099313A1 (en) * 2004-04-02 2005-10-20 Idemitsu Kosan Co., Ltd. Organic electroluminescence element having two electroluminescent layers through electron barrier layer
JP2006013295A (en) * 2004-06-29 2006-01-12 Nippon Seiki Co Ltd Organic el element
WO2006015567A1 (en) * 2004-08-13 2006-02-16 Novaled Ag Layer arrangement for a light-emitting component
JP2008509565A (en) * 2004-08-13 2008-03-27 ノヴァレッド・アクチエンゲゼルシャフト Laminate for luminescent component

Cited By (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009132977A (en) * 2007-11-30 2009-06-18 Tokyo Electron Ltd Film forming apparatus control method, film forming method, film forming apparatus, organic EL electronic device, and storage medium storing control program thereof
WO2009069740A1 (en) * 2007-11-30 2009-06-04 Tokyo Electron Limited Film forming device control method, film forming method, film forming device, organic el electronic device, and recording medium storing its control program
KR101231656B1 (en) * 2007-11-30 2013-02-08 도쿄엘렉트론가부시키가이샤 Film forming device control method, film forming method, film forming device, organic el electronic device, and recording medium storing its control program
WO2010110034A1 (en) * 2009-03-25 2010-09-30 日本精機株式会社 Organic el element
WO2010137733A1 (en) 2009-05-29 2010-12-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and method for manufacturing the same
JP2011009205A (en) * 2009-05-29 2011-01-13 Semiconductor Energy Lab Co Ltd Light emitting element, light emitting device, and method of manufacturing the same
US9741955B2 (en) 2009-05-29 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and method for manufacturing the same
EP2436234A4 (en) * 2009-05-29 2013-06-19 Semiconductor Energy Lab Light-emitting element, light-emitting device, and method for manufacturing the same
CN102484923A (en) * 2009-09-04 2012-05-30 株式会社半导体能源研究所 Light-emitting element, light-emitting device, and method for manufacturing the same
WO2011027653A1 (en) 2009-09-04 2011-03-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and method for manufacturing the same
JP2011077032A (en) * 2009-09-04 2011-04-14 Semiconductor Energy Lab Co Ltd Light-emitting element, light-emitting device, and method of manufacturing the same
US9209415B2 (en) 2009-09-04 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element with multiple light-emitting layers having controlled carrier mobility and lighting device and electronic device using the same
US9391277B2 (en) 2009-10-27 2016-07-12 Dai Nippon Printing Co., Ltd. Device comprising positive hole injection transport layer, method for producing the same and ink for forming positive hole injection transport layer
WO2011052648A1 (en) * 2009-10-27 2011-05-05 大日本印刷株式会社 Device having hole injection/transport layer, method for producing same, and ink for forming hole injection/transport layer
CN102484210A (en) * 2009-10-27 2012-05-30 大日本印刷株式会社 Nanoparticles containing transition metal compound, method for producing same, ink for hole injection transport layer, device with hole injection transport layer, and method for producing the same
WO2011052645A1 (en) * 2009-10-27 2011-05-05 大日本印刷株式会社 Nanoparticle containing transition metal compound, method for producing same, ink for hole injection/transport layer, device having hole injection/transport layer, and method for producing same
JP2011119681A (en) * 2009-10-27 2011-06-16 Dainippon Printing Co Ltd Nanoparticle containing transition metal compound, method for producing the same, ink for hole injection/transport layer, device having hole injection/transport layer, and method for producing the same
JP2011096733A (en) * 2009-10-27 2011-05-12 Dainippon Printing Co Ltd Device having hole injection/transport layer, method for manufacturing the device, and ink for forming hole injection/transport layer
US8927099B2 (en) 2009-10-27 2015-01-06 Dai Nippon Printing Co., Ltd. Transition metal compound-containing nanoparticle and method for producing the same, ink for positive hole injection transport layer, device comprising positive hole injection transport layer and method for producing the same
US9159943B2 (en) 2009-10-28 2015-10-13 Lunalec Ab Light-emitting electrochemical device, a system comprising such a device and use of such a device
JP2013509710A (en) * 2009-10-28 2013-03-14 ルナレック アクチエボラグ Luminescent electrochemical device, system including the device, and use of the device
US8486543B2 (en) 2009-12-01 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US9698354B2 (en) 2009-12-01 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US12484439B2 (en) 2009-12-01 2025-11-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
US10756287B2 (en) 2009-12-01 2020-08-25 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
WO2012070330A1 (en) * 2010-11-25 2012-05-31 日本精機株式会社 Organic el element
JP2015201496A (en) * 2014-04-04 2015-11-12 セイコーエプソン株式会社 Light-emitting element, light-emitting device, display device and electronic apparatus
CN110010773B (en) * 2018-01-05 2023-08-18 固安鼎材科技有限公司 Luminous layer for adjusting carrier mobility and organic electroluminescent device
CN110010773A (en) * 2018-01-05 2019-07-12 固安鼎材科技有限公司 A kind of luminescent layer and organic electroluminescence device adjusting carrier mobility
KR20220099948A (en) 2019-11-08 2022-07-14 이데미쓰 고산 가부시키가이샤 Organic electroluminescent devices and electronic devices
US11489121B1 (en) 2019-11-08 2022-11-01 Idemitsu Kosan Co., Ltd. Organic electroluminescent device configured to emit light with high luminous efficiency
US11489128B1 (en) 2019-11-08 2022-11-01 Idemitsu Kosan Co., Ltd. Organic electroluminescent element emitting light at high luminous effiency and electronic device
US11552259B1 (en) 2020-02-14 2023-01-10 Idemitsu Kosan Co., Ltd. Organic electroluminescent element and electronic device
KR20220141780A (en) 2020-02-14 2022-10-20 이데미쓰 고산 가부시키가이샤 Organic electroluminescent devices and electronic devices
KR20230027191A (en) 2020-06-19 2023-02-27 이데미쓰 고산 가부시키가이샤 Organic electroluminescent elements and electronic devices
KR20230117384A (en) 2020-12-02 2023-08-08 이데미쓰 고산 가부시키가이샤 Organic electroluminescent elements and electronic devices
US11575087B1 (en) 2020-12-25 2023-02-07 Idemitsu Kosan Co., Ltd. Organic electroluminescence device, light emitting device, organic electroluminescence display device and electronic device
KR20230125260A (en) 2020-12-25 2023-08-29 이데미쓰 고산 가부시키가이샤 Organic electroluminescent elements and electronic devices
US12538638B2 (en) 2020-12-25 2026-01-27 Idemitsu Kosan Co., Ltd. Organic electroluminescent element and electronic device
US12369490B2 (en) 2021-01-13 2025-07-22 Idemitsu Kosan Co., Ltd. Organic electroluminescent element, organic electroluminescent display device, and electronic device
KR20230134557A (en) 2021-01-21 2023-09-21 이데미쓰 고산 가부시키가이샤 Organic electroluminescent devices and electronic devices
WO2022191299A1 (en) * 2021-03-10 2022-09-15 出光興産株式会社 Organic electroluminescent element and electronic device
WO2022230843A1 (en) * 2021-04-26 2022-11-03 出光興産株式会社 Organic electroluminescent element, organic electroluminescent display apparatus, and electronic device
KR20240001701A (en) 2021-04-26 2024-01-03 이데미쓰 고산 가부시키가이샤 Organic electroluminescent devices, organic electroluminescent display devices and electronic devices
EP4395515A1 (en) * 2022-12-29 2024-07-03 LG Display Co., Ltd. Organic light emitting diode and organic light emitting device including the same
WO2025231863A1 (en) * 2024-05-10 2025-11-13 京东方科技集团股份有限公司 Display panel and display device

Also Published As

Publication number Publication date
JP4886352B2 (en) 2012-02-29

Similar Documents

Publication Publication Date Title
JP4886352B2 (en) Organic electroluminescence device
JP5476061B2 (en) Organic electroluminescence device and method for manufacturing the same
JP6157865B2 (en) Multilayer organic light emitting device
JP6089280B2 (en) Organic electroluminescence device
KR101453874B1 (en) White organic light emitting device
JP4584506B2 (en) Organic electroluminescence device
JP4915650B2 (en) Organic electroluminescence device
JP4966176B2 (en) Organic electroluminescence device
KR100886426B1 (en) Organic electroluminescent element
JPWO2011074633A1 (en) Organic electroluminescence device
JP2011054668A (en) Organic electroluminescence device
JP2010092741A (en) Organic electroluminescent element
JP2003303691A (en) Organic electronic light emitting device
JP3967946B2 (en) Organic electroluminescence device
JP2010034042A (en) Organic electroluminescent element
JP2003282265A (en) Organic electroluminescent element
JP4915651B2 (en) Organic electroluminescence device
JP2010033973A (en) Organic electroluminescent element
JP5102522B2 (en) Organic electroluminescence device
JP2004111080A (en) Organic el element
JP4915652B2 (en) Organic electroluminescence device
JP2011040437A (en) Organic electroluminescence element
JP2003282267A (en) Light emitting device
JP2008218320A (en) Organic electroluminescent element
JP2010108652A (en) Manufacturing method of organic electroluminescent element

Legal Events

Date Code Title Description
A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20070801

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090119

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100810

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111129

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111209

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141216

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4886352

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250