JP2007281264A - Manufacturing method of semiconductor device - Google Patents

Abstract

A method for manufacturing a semiconductor device with improved productivity and reduced manufacturing cost is provided.
In batch flip chip bonding (FCB), a step of forming an adhesive layer 45 on a flat holding surface 43 of a plurality of mount heads 40 prepared, and a chip 10 temporarily fixed on the adhesive layer 45 of the holding surface 43 And a step of setting the supply unit of the flip chip bonder 30 so that the plurality of mount heads 40 can be sequentially supplied one by one. At the time of FCB, the mount head 40 is held by the holding rod 34 of the flip chip bonder. Then, the step of collectively connecting the electrodes of the chip 10 to the connection pads of each product forming portion of the wiring mother board, and the holding rod 34 is moved so that the mounting head 40 moves away from the wiring mother board and is attached to the mounting head 40. A step of peeling each chip 10 from the attached adhesive layer 45, and temporarily fixing the chip 10 to the mount head 40 Using the adhesive layer 45 of the printheads 40 is repeated to be.
[Selection] Figure 9

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly, in a method for manufacturing a semiconductor device that employs a batch molding method using a wiring mother board (wiring board), a semiconductor chip is bundled in each product formation portion of the wiring mother board. The present invention relates to a technique effective when applied to a flip-chip bonding technique.

  As a method for manufacturing a resin-encapsulated semiconductor device, a method for manufacturing a semiconductor device that employs a so-called batch molding method is known. This method uses a wiring mother board (wiring board) in which product forming portions on which one semiconductor device is formed are arranged vertically and horizontally. In manufacturing a semiconductor device, first, a semiconductor chip is fixed to each product forming portion of a wiring mother board, and electrodes and wirings of the semiconductor chip are electrically connected by a connecting means. Next, a resin layer made of an insulating resin is formed on one surface of the wiring motherboard to cover each semiconductor chip and wire. Next, external electrode terminals (bump electrodes) are formed on the back surface of the wiring mother board, and then the wiring mother board is cut vertically and horizontally together with the resin layer to manufacture a plurality of semiconductor devices (for example, Patent Document 1).

  Further, as a connection means for electrically connecting the electrode of the semiconductor chip and the wiring of the product forming portion, a means for connecting with a conductive wire (wire bonding), or a so-called connection of the electrode of the semiconductor chip directly to the wiring Flip chip connection means (flip chip bonding) is known (for example, Patent Document 2).

  Patent Document 2 discloses a technique for fixing a plurality of semiconductor chips together on a circuit board. This document describes the following. That is, the back surface of the semiconductor chip on which the solder bump electrodes are formed is temporarily fixed with adhesive (wax) at predetermined positions on the flat surface of the block. Thereafter, the block is positioned and overlapped on the circuit board, and each solder bump electrode of each semiconductor chip supported on the lower surface of the block is collectively connected to the pad of the circuit board by solder reflow. After the solder bump electrodes are fixed to the pads, the adhesive (wax) is removed by washing with an alcohol solvent to remove the block from the back surfaces of the plurality of semiconductor chips. In another semiconductor device mounting method, the block and the semiconductor chip are separated from each other by utilizing the fact that wax is foamed by heat at the time of solder reflow and the adhesive force is lost.

JP 2004-158539 A JP-A-6-163634

  In flip-chip bonding, it is difficult to shorten the time required for chip bonding because one semiconductor chip is usually held and bonded by one head.

  Therefore, the present inventor sequentially picks up semiconductor chips obtained by dicing a semiconductor wafer vertically and horizontally, positions and arranges them on a dedicated mount head with high precision, and then uses this mount head to form a wiring mother board (wiring board). The method of fixing the semiconductor chip to each product formation part of (1) was studied.

  At this time, attention was paid to the adhesive for temporarily fixing the semiconductor chip to the mount head. Work such as applying adhesive to the flat holding surface of the mount head every time the semiconductor chip is temporarily fixed, or removing the adhesive on the holding surface of the mount head after flip chip bonding increases man-hours. This will hinder the reduction of the manufacturing cost of the device.

  SUMMARY OF THE INVENTION An object of the present invention is to improve the productivity of a semiconductor device and reduce the manufacturing cost of the semiconductor device by reducing the number of steps in a semiconductor device manufacturing method adopting a batch flip chip bonding method.

  An object of the present invention is to improve the productivity of a semiconductor device and reduce the manufacturing cost of the semiconductor device by reducing the number of steps in a semiconductor device manufacturing method that adopts a batch flip-chip bonding method and a batch molding method. It is in.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  The following is a brief description of an outline of typical inventions disclosed in the present application.

1. (A) preparing a semiconductor chip having a first surface and a second surface opposite to the first surface, and having a plurality of electrodes on the first surface;
(B) A wiring having a predetermined pattern is provided on the first surface and a second surface opposite to the first surface, and a part of the wiring on the first and second surfaces is the first surface. Product forming portions connected by wiring penetrating between the surface and the second surface are formed vertically and horizontally,
The wiring on the first surface of the product forming portion has a connection pad formed corresponding to the electrode of the semiconductor chip;
A step of preparing a wiring mother board having a plurality of terminal forming pads for the wiring on the second surface of the product forming portion;
(C) a step of batch-flip-chip bonding the electrodes of the semiconductor chip to the connection pads of the product forming portions with a flip-chip bonder (batch flip-chip bonding method);
A method of manufacturing a semiconductor device comprising:
In the step (c),
in advance,
(1) A step of preparing a plurality of mount heads having a flat holding surface and forming an adhesive layer that can be repeatedly used for bonding on the holding surface of each mount head;
(2) The semiconductor chip is bonded onto the adhesive layer of the holding surface of the mount head via a second surface so that the semiconductor chips fixed to the wiring mother board are fixedly arranged. A temporary fixing step;
(3) including a step of setting the supply unit of the flip chip bonder so that the plurality of mount heads can be sequentially supplied one by one,
During flip chip bonding,
(4) The mounting head in the supply unit is held by a holding rod of the flip chip bonder, and the electrodes of the semiconductor chip are collectively connected to the connection pads of the product forming units of the wiring mother board. Process,
(5) a step of moving the holding rod so that the mount head moves away from the wiring mother board and peeling each semiconductor chip from the adhesive layer attached to the mount head;
The temporary fixing of the semiconductor chip to the mount head is repeatedly performed using the adhesive layer of the mount head.

  The adhesive layer is a tape having adhesiveness on both sides. In the supply unit, the mount head is supplied in a state where the semiconductor chip is a lower surface, and the holding rod holds the mount head on the lower surface of the holding rod by vacuum suction. Furthermore, the supply unit stores the mount heads in a stacked state, and stores and supplies the mount heads to a rack that has an open top surface and can be inserted and removed from the side.

2. In the above configuration 1, after the step (c),
(D) forming a resin layer made of an insulating resin that closes the gap between the wiring mother board and the semiconductor chips and covers the semiconductor chips on the wiring mother board (collective molding method);
(E) forming an external electrode terminal on each terminal forming pad of each product forming portion;
(F) The method includes a step of cutting the wiring mother board and the resin layer along a boundary line between the product forming portions to separate the product forming portions.

The effects obtained by the representative ones of the inventions disclosed in the present application will be briefly described as follows.
According to the first means, (a) in the collective flip chip bonding, the semiconductor chip temporarily fixed to the mounting surface of the mount head can be repeatedly used for bonding about 100 times formed on the mounting surface of the mount head. It is adhered on the adhesive layer. Therefore, it is not necessary to remove the adhesive layer from the mount head every batch flip-chip bonding, or to form an adhesive layer on the holding surface of the mount head before the collective flip-chip bonding, thereby reducing the work man-hours. Become. As a result, the productivity can be improved and the manufacturing cost of the semiconductor device can be reduced.

(B) According to the present invention, since the flip chip bonding is performed collectively on each product forming portion of the wiring mother board without performing the flip chip bonding individually, man-hours can be reduced, so that productivity is improved. In addition, the manufacturing cost of the semiconductor device can be reduced.
The second means has the following effects in addition to the effects of the first means 1. In other words, since the resin layer is formed by molding all at once without forming the sealing body by individually molding each product forming portion of the wiring mother board, the wiring mother board can be miniaturized and the material can be reduced. Can be reduced. In addition, the mold has a simple structure, the capital investment amount is reduced, and the manufacturing cost of the semiconductor device can be reduced.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment of the invention, and the repetitive description thereof is omitted.

  In the first embodiment, an example in which the present invention is applied to a method of manufacturing a BGA (Ball Grid Array) type semiconductor device will be described. 1 to 15 are diagrams relating to a method of manufacturing a semiconductor device according to Embodiment 1 of the present invention.

  The semiconductor device 1 manufactured by the semiconductor device manufacturing method according to the first embodiment has an appearance and an internal structure as shown in FIGS. 1 is a plan view of the semiconductor device, FIG. 2 is a side view of the semiconductor device, FIG. 3 is a bottom view of the semiconductor device, FIG. 4 is an enlarged sectional view taken along the line AA in FIG. It is an expanded sectional view of a part.

  As shown in FIGS. 1 to 3, the semiconductor device 1 has a rectangular wiring board 2 in appearance and a rectangular board formed on the first surface 2 a (upper surface in FIG. 2) of the wiring board 2. The sealing body 3 includes a plurality of external electrode terminals 4 formed on a second surface 2b (the lower surface in FIG. 2) which is the opposite surface of the first surface 2a of the wiring board 2. As shown in FIG. 3, the external electrode terminals 4 are provided in two rows along each side of the rectangular wiring board 2.

  The wiring board 2 is made of, for example, a glass / epoxy resin wiring board having a thickness of 0.2 mm. As shown in FIGS. 4 and 5, the wiring 5 having a predetermined pattern is formed on the first surface 2a and the second surface 2b. 6. These wirings 5 and 6 are connected by a wiring 7 penetrating between the upper and lower surfaces of the wiring board 2 as shown in FIG. Further, the first and second surfaces 2 a and 2 b of the wiring substrate 2 are selectively covered with insulating films (solder resist films) 8 and 9. The wiring 7 is formed by plating on the inner peripheral wall surface of a through hole provided through the wiring substrate 2. For example, the solder resist films 8 and 9 have a thickness of 25 μm, and the wirings 5 and 6 are formed of a 16 μm copper layer.

  A rectangular semiconductor chip 10 is located inside the sealing body 3. The semiconductor chip 10 has a plurality of electrodes 11 on the first surface 10a. The electrodes 11 are not particularly limited, but are arranged in a line along each side in the vicinity of each side of the semiconductor chip 10. The second surface 10b, which is the opposite surface of the first surface 10a of the semiconductor chip 10, is a flat semiconductor surface. Although not shown, predetermined circuit elements are formed on the semiconductor chip 10. The semiconductor chip 10 is made of, for example, a silicon substrate having a thickness of 200 μm, and the electrode 11 is made of an Au bump electrode having a thickness of 50 μm. Further, the sealing body 3 is formed of, for example, an insulating epoxy resin having a thickness of 400 μm.

  On the first surface 2 a of the wiring substrate 2, a wiring portion exposed from the solder resist film 8 is formed corresponding to the electrode 11 of the semiconductor chip 10 and becomes a connection pad 15. A plating film 16 is formed on the surface of the connection pad 15. Further, on the second surface 2 b of the wiring substrate 2, the wiring portion exposed from the solder resist film 9 becomes a terminal formation pad 17 for forming the external electrode terminal 4. A plating film 18 is formed on the surface of the terminal formation pad 17. External electrode terminals 4 are formed on the surface of the plating film 18. The external electrode terminal 4 is composed of, for example, a bump electrode formed by a solder ball (PbSn ball) having a diameter of 300 μm. The plated film 16 and the plated film 18 are formed of, for example, a Ni layer having a thickness of 5 μm and an Au layer having a thickness of 0.5 μm formed on the Ni layer.

Next, a method for manufacturing the semiconductor device 1 according to the first embodiment will be described with reference to FIGS.
6A to 6D are views showing manufactured products in each process manufactured by the method for manufacturing a semiconductor device according to the first embodiment. Moreover, in each figure of Fig.6 (a)-(d), although the figure is each displayed on the right and the left, the figure on the left is a front view of a manufactured product, and the figure on the right is a top view of a manufactured product.

  Each step of the semiconductor device manufacturing method will be described. As shown in FIG. 6A, a wiring mother board 20 is prepared. Recognition marks 21 are formed at the four corners of the wiring mother board 20, and are used as recognition marks for positioning in batch flip-chip connection. 6A, the semiconductor chips 10 are collectively flip-chip bonded to the first surface 20a of the wiring mother board 20 in an aligned state vertically and horizontally. As a result, as shown in the diagram on the right side of FIG. 6A, the semiconductor chip 10 is fixed to the first surface 20a of the wiring motherboard 20 in an aligned state vertically and horizontally.

  Next, as shown in the left side of FIG. 6B, a batch molding is performed on the first surface 20a of the wiring motherboard 20 so as to cover each semiconductor chip 10 with an insulating resin (for example, epoxy resin). This is done to form the resin layer 3a. The resin layer 3a is formed by, for example, a transfer molding apparatus. By the transfer molding, the resin layer 3a is formed on the entire surface excluding the peripheral portion of the wiring mother board 20, as shown in the diagram on the right side of FIG. The thickness of the resin layer 3a is constant, and is formed to a thickness of 400 μm, for example. The resin that forms the resin layer 3 a closes the gap between the wiring mother board 20 and the semiconductor chip 10.

  Next, as shown in the left side of FIG. 6C, a solder ball (PbSn ball) having a diameter of 300 μm is attached to the second surface 20b of the wiring mother board 20, and the external electrode terminal 4 is formed by reflowing. To do. The external electrode terminal 4 is formed of a solder bump electrode.

  Next, as shown in the diagram on the left side of FIG. 6D, a dicing tape 22 that can be peeled off is attached to the second surface 20 b side of the wiring mother board 20. The external electrode terminals 4 are bonded to the surface of the dicing tape 22 to fix the wiring mother board 20 to the dicing tape 22. Next, as shown in the right side of FIG. 6D, the wiring mother board 20 and the resin layer 3a are cut vertically and horizontally by a dicing blade (not shown). The dicing blade cuts the dicing tape 22 to a halfway depth as shown on the left side of FIG. Reference numeral 23 denotes a cutting groove. By this cutting, the wiring mother board 20 and the resin layer 3a are separated. By this cutting, the wiring mother board 20 becomes the wiring board 2, the resin layer 3 a becomes the sealing body 3, and a plurality of semiconductor devices 1 are manufactured. By peeling off each semiconductor device 1 from the dicing tape 22, the semiconductor device 1 shown in FIGS.

  The manufactured semiconductor device 1 is housed and stored in each housing recess of the tray 25, for example, as shown in FIG. The housing recess has a size slightly larger than that of the semiconductor device 1, but is omitted in the drawing.

  Next, collective flip chip bonding will be described. The collective flip chip bonding is performed by a flip chip bonder 30 shown in FIG. The flip chip bonder 30 includes a machine base 31, a main body 32 protruding from the upper surface side of the machine base 31, an arm 33 protruding from one side of the main body 32, a holding rod 34 attached to the tip of the arm 33, It has a table 35 on which a work is placed, a supply unit (loader unit), a carry-out unit (unloader unit), and the like.

  The main body 32 is controlled to move up and down along the Z-axis direction and can be rotated. Further, the arm 33 can be controlled to extend and contract in the extending direction of the arm. As a result, the holding rod 34 can be controlled in a three-dimensional position. The holding rod 34 has a cylindrical structure, and a lower surface having an open vacuum suction hole is a clamp surface by vacuum suction. In the embodiment, the plate-like mount head 40 is held by vacuum suction on the clamp surface. A pipe 41 connected to a vacuum mechanism (not shown) is connected to the upper end of the mount head 40. Although not shown in the drawing, the holding rod 34 is vacuum-sucked and released by turning on and off an open / close valve provided in the middle of the pipe 41. A cartridge heater is built in the holding rod 34 so that the lower portion of the holding rod 34 is heated to a predetermined temperature. This is for heating the mount head 40 to a predetermined temperature when the mount head 40 is clamped. Further, a cartridge heater is also built in the table 35 in order to heat the mount head 40 to a predetermined temperature. The mechanism that holds the mount head 40 may be a mechanical mechanism other than the vacuum suction mechanism.

  A plurality of mount heads 40 are prepared. As shown in FIG. 10, the mount head 40 is composed of a square plate having a clamp surface 42 clamped by the holding rod 34 and a flat holding surface 43 that is the opposite surface of the clamp surface 42. The mount head 40 is not particularly limited, but has the same outer dimensions as the wiring mother board 20. Further, as shown in FIG. 11, recognition marks 44 are formed at the four corners of the mount head 40. The recognition marks 44 correspond to the recognition marks 21 at the four corners of the wiring mother board 20 shown in FIG. 12, and are used together with the recognition marks 21 as positioning recognition marks for batch flip-chip connection.

  Since the mount head 40 is exposed to a temperature of about 250 ° C., for example, at the time of flip-chip connection, any material may be used as long as it does not deteriorate or deform. In the embodiment, the mount head 40 is formed of a super steel material having a thickness of 15 mm.

  As shown in FIGS. 10 and 11, an adhesive layer 45 that can be repeatedly used for adhesion is formed on the holding surface 43 of the mount head 40. The adhesive layer 45 is formed of a tape having adhesiveness on both sides. This tape is made of, for example, an ACF (Anisotropic Conductive Film) having adhesiveness on both sides. Note that the adhesive layer 45 may be formed of NCP (Non Conductive Resin Paste) having adhesiveness. The adhesive layer 45 is indicated by a thick black line drawn on one surface of the mount head 40 in FIG.

  The semiconductor chip 10 is temporarily fixed to the adhesive layer 45 on the holding surface 43 of the mount head 40 so that the semiconductor chips 10 to be fixed to the wiring motherboard 20 are fixedly arranged. As a result of temporarily fixing the semiconductor chip 10 to the adhesive layer 45 of the holding surface 43 via the second surface 10b, the electrode 11 is exposed as shown in FIG. In FIG. 11, the electrodes 11 are displayed on some of the semiconductor chips 10 and are omitted from the other semiconductor chips 10. Temporary fixing is performed by a general chip bonder for flip-chip bonding one common semiconductor chip.

  The plurality of mount heads 40 are set in the supply section of the flip chip bonder 30 so that they can be sequentially supplied one by one. As shown in FIG. 9, in the supply part of the flip chip bonder 30, the mount head 40 is accommodated in a stacked state, and the mount head 40 is accommodated in a rack 50 whose upper surface is open and the mount head 40 can be entered and exited from the side. To supply. The semiconductor chip 10 temporarily fixed to the mount head 40 is accommodated in the rack 50 in a state of being positioned on the lower surface of the mount head 40. As shown in FIG. 9, the rack 50 includes a pair of facing side plates 51, 52, a bottom plate 53 fixed to the lower ends of the side plates 51, 52, a guide 54 fixed to the inner wall surface of the side plates 51, 52, 55. A plurality of guides 54, 55 are provided facing the inner wall surfaces of the side plates 51, 52 so that the mount heads 40 can be stacked with a predetermined separation.

  Since the box-shaped rack 50 formed by the facing side plates 51 and 52 and the bottom plate 53 is open at the upper surface and the facing side, the mount head 40 can be moved in and out so as to slide from the side. The mount head 40 can be accommodated in the rack 50 by placing the opposite side portions of the mount head 40 on the guides 54 and 55. Since the top surface of the rack 50 is open, as shown in FIG. 9, the holding rod 34 is moved into the rack 50 from the opening on the top surface of the rack 50 by operating the main body 32 and the arm 33 of the flip chip bonder 30. Can be moved. Therefore, the uppermost mounting head 40 is vacuum-sucked and held on the lower surface of the holding rod 34, and the holding rod 34 is moved to one side where the rack 50 is opened and taken out from the rack 50. Thereafter, the holding rod 34 is transferred to the table 35 and batch flip chip bonding is performed.

  FIG. 12 is a plan view of the wiring motherboard 20, that is, a diagram showing the first surface 20 a of the wiring motherboard 20. The wiring mother board 20 is partitioned, and product forming portions 60 are aligned in the vertical and horizontal directions. The product forming unit 60 is a quadrangular region indicated by a dotted line. The product forming part 60 has a size larger than that of the semiconductor chip 10. The wiring mother board 20 is finally cut into a wiring board 2 vertically and horizontally by a dicing blade. A region between adjacent product forming portions 60 is a cutting region that is cut by a dicing blade.

  FIG. 8 is an enlarged cross-sectional view showing the product forming portion 60. The portions indicated by the alternate long and short dash lines on both sides are the portions cut by the dicing blade. Accordingly, the product forming portion 60 is formed between adjacent one-dot chain lines. Wiring 5 and connection pads 15 are formed on the first surface 20 a of the wiring mother board 20, strictly speaking, the first surface 60 a of the product forming unit 60, and wiring is formed on the second surface 60 b of the product forming unit 60. 6 and the terminal formation pad 17 are provided. Since the structure of the product forming unit 60 is the same as the structure of the wiring board 2, description of other parts is omitted.

  When performing flip-chip bonding, after preparing the wiring mother board 20, the wiring mother board 20 is positioned and placed on the table 35 as shown in FIGS.

  Next, as shown in FIG. 9, the flip chip bonder 30 is operated to hold the uppermost mount head 40 accommodated in the rack 50 by the holding rod 34. As shown in FIG. The mount head 40 is transferred.

  Next, the recognition mark 21 of the wiring mother board 20 and the recognition mark 44 of the mount head 40 are detected by an alignment mechanism (not shown) to control the position of the holding rod 34, and the mount head 40 is positioned with respect to the wiring mother board 20. To do. As a result, as shown in FIG. 13, the electrode 11 on the first surface 10 a serving as the lower surface of the semiconductor chip 10 is positioned directly above each connection pad 15 of each product forming unit 60.

Next, the holding rod 34 is lowered, and each semiconductor chip 10 located on the lower surface of the mount head 40 is pressed against the product forming portion 60 as shown in FIG. By this pressing, each electrode 11 of each semiconductor chip 10 is pressed against the connection pad 15 of each product forming unit 60. Since the wiring mother board 20 is heated to a predetermined temperature by the table 35 and the semiconductor chip 10 is heated to a predetermined temperature by the holding rod 34, the plating film 16 provided on the surface of the connection pad 15 is formed. The Au layer and the electrode 11 made of an Au bump electrode are melted and connected. This flip-chip connection is performed, for example, by applying a pressing load of about 10 kg / cm ² at a temperature of 250 ° C. for about 5 seconds.

  Next, as shown in FIGS. 9 and 15, each semiconductor chip is moved from the adhesive layer 45 attached to the mount head 40 by moving (raising) the holding rod 34 so that the mount head 40 moves away from the wiring mother board 20. 10 is peeled off. The mount head 40 from which the semiconductor chip 10 has been peeled is transferred to an unloader section (not shown). The semiconductor chip 10 is temporarily fixed to the used mount head 40 again. Thus, the temporary fixing of the semiconductor chip 10 to the mount head 40 is repeatedly performed using the adhesive layer 45 of the mount head 40.

  For the wiring mother board 20 on which the collective flip-chip bonding has been performed, as already described with reference to FIGS. 6B to 6D, the formation of the resin layer 3a, the formation of the external electrode terminals 4, and the individual Each process of singulation is performed. As a result, a plurality of semiconductor devices 1 shown in FIGS. 1 to 3 are manufactured.

The method for manufacturing a semiconductor device according to the first embodiment has the following effects.
(1) In the collective flip chip bonding, the semiconductor chip 10 temporarily fixed to the holding surface 43 of the mount head 40 is bonded onto the adhesive layer 45 that is formed on the holding surface 43 of the mount head 40 and can be used repeatedly. Is done. Accordingly, it is not necessary to remove the adhesive layer from the mount head 40 every batch flip-chip bonding or to form an adhesive layer on the holding surface 43 of the mount head 40 before the batch flip-chip bonding, thereby reducing the number of work steps. Is possible. As a result, the productivity can be improved and the manufacturing cost of the semiconductor device 1 can be reduced.

  (2) Since the flip chip bonding is performed collectively on each product forming portion 60 of the wiring mother board 20 without performing the flip chip bonding individually, man-hours can be reduced, so that the productivity is improved and the semiconductor device 1 The manufacturing cost can be reduced.

  (3) Since each product forming part 60 of the wiring mother board 20 is individually molded to form the resin layer 3a without forming a sealing body, the size of the wiring mother board 20 is reduced. The material can be reduced and the material can be reduced. In addition, the mold has a simple structure with a single cavity, the amount of capital investment is reduced, and the manufacturing cost of the semiconductor device 1 can be reduced.

  The invention made by the present inventor has been specifically described based on the embodiments. However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Nor.

It is a top view of the semiconductor device manufactured by the manufacturing method of the semiconductor device which is Example 1 of this invention. 1 is a side view of a semiconductor device according to Example 1. FIG. 1 is a bottom view of a semiconductor device according to Example 1. FIG. It is an expanded sectional view which follows the AA line of FIG. FIG. 5 is a partial enlarged cross-sectional view of FIG. 4. It is a figure which shows the manufactured goods in each process manufactured by the manufacturing method of the semiconductor device of Example 1. FIG. FIG. 3 is a plan view showing a state where the semiconductor device manufactured according to Example 1 is housed in a tray. FIG. 6 is an enlarged cross-sectional view showing a product formation portion of a wiring mother board used in the method for manufacturing a semiconductor device of Example 1. FIG. 6 is a schematic diagram illustrating a semiconductor chip batch fixing method in the method for manufacturing a semiconductor device according to the first embodiment. It is a schematic diagram showing a holding rod of a flip chip bonder for performing the semiconductor chip batch fixing and a mount head held by this holding rod. It is a schematic diagram which shows the semiconductor chip temporarily fixed to the holding surface of the said mount head. It is a top view of the said wiring mother board. It is an expanded sectional view showing the mount head which descends on the wiring mother board. It is an expanded sectional view showing the state where the semiconductor chip temporarily fixed to the mount head is connected to the wiring mother board. FIG. 4 is an enlarged cross-sectional view showing a state in which a mount head is separated from a semiconductor chip fixed to the wiring motherboard.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor device, 2 ... Wiring board, 2a ... 1st surface, 2b ... 2nd surface, 3 ... Sealing body, 3a ... Resin layer, 4 ... External electrode terminal, 5, 6, 7 ... Wiring, 8 , 9 ... Solder resist film, 10 ... Semiconductor chip, 10a ... First surface, 10b ... Second surface, 11 ... Electrode, 15 ... Connection pad, 16 ... Plating film, 17 ... Terminal formation pad, 18 ... Plating film 20 ... wiring mother board, 20a ... first surface, 20b ... second surface, 21 ... recognition mark, 22 ... dicing tape, 23 ... cutting groove, 25 ... tray, 30 ... flip chip bonder, 31 ... machine base 32 ... Main body, 33 ... Arm, 34 ... Holding rod, 35 ... Table, 40 ... Mount head, 41 ... Pipe, 42 ... Clamp surface, 43 ... Holding surface, 44 ... Recognition mark, 45 ... Adhesive layer, 50 ... Rack , 51, 52 ... side plate, 53 ... bottom plate, 54 55 ... guide, 60 ... product forming section, 60a ... first face, 60b ... second surface.

Claims (5)

(A) preparing a semiconductor chip having a first surface and a second surface opposite to the first surface, and having a plurality of electrodes on the first surface;
(B) A wiring having a predetermined pattern is provided on the first surface and a second surface opposite to the first surface, and a part of the wiring on the first and second surfaces is the first surface. Product forming portions connected by wiring penetrating between the surface and the second surface are formed vertically and horizontally,
The wiring on the first surface of the product forming portion has a connection pad formed corresponding to the electrode of the semiconductor chip;
A step of preparing a wiring mother board having a plurality of terminal forming pads for the wiring on the second surface of the product forming portion;
(C) a step of performing flip-chip bonding of the electrodes of the semiconductor chip to the connection pads of the product forming portions with a flip-chip bonder;
A method of manufacturing a semiconductor device comprising:
In the step (c),
in advance,
(1) A step of preparing a plurality of mount heads having a flat holding surface and forming an adhesive layer that can be repeatedly used for bonding on the holding surface of each mount head;
(2) The semiconductor chip is bonded onto the adhesive layer of the holding surface of the mount head via a second surface so that the semiconductor chips fixed to the wiring mother board are fixedly arranged. A temporary fixing step;
(3) including a step of setting the supply unit of the flip chip bonder so that the plurality of mount heads can be sequentially supplied one by one,
During flip chip bonding,
(4) The mounting head in the supply unit is held by a holding rod of the flip chip bonder, and the electrodes of the semiconductor chip are collectively connected to the connection pads of the product forming units of the wiring mother board. Process,
(5) a step of moving the holding rod so that the mount head moves away from the wiring mother board and peeling each semiconductor chip from the adhesive layer attached to the mount head;
The semiconductor device manufacturing method, wherein the semiconductor chip is temporarily fixed to the mount head repeatedly using the adhesive layer of the mount head. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the adhesive layer is a tape having adhesiveness on both sides. 2. The supply unit according to claim 1, wherein the mount head is supplied in a state where the semiconductor chip is a lower surface, and the holding rod holds the mount head on the lower surface of the holding rod by vacuum suction. A method for manufacturing a semiconductor device. 2. The supply unit stores and mounts the mount heads in a stacked state, and stores and mounts the mount heads in a rack that has an open top surface and that can be inserted and removed from the side. The manufacturing method of the semiconductor device as described in any one of Claims 1-3. (A) preparing a semiconductor chip having a first surface and a second surface opposite to the first surface, and having a plurality of electrodes on the first surface;
(B) A wiring having a predetermined pattern is provided on the first surface and a second surface opposite to the first surface, and a part of the wiring on the first and second surfaces is the first surface. Product forming portions connected by wiring penetrating between the surface and the second surface are formed vertically and horizontally,
The wiring on the first surface of the product forming portion has a connection pad formed corresponding to the electrode of the semiconductor chip;
A step of preparing a wiring mother board having a plurality of terminal forming pads for the wiring on the second surface of the product forming portion;
(C) a step of performing flip-chip bonding of the electrodes of the semiconductor chip to the connection pads of the product forming portions with a flip-chip bonder;
(D) forming a resin layer made of an insulating resin on the wiring mother board that closes a gap between the wiring mother board and the semiconductor chips and covers the semiconductor chips;
(E) forming an external electrode terminal on each terminal forming pad of each product forming portion;
(F) cutting the wiring mother board and the resin layer at a boundary line between the product forming parts to separate the product forming parts;
In the step (c),
in advance,
(1) A step of preparing a plurality of mount heads having a flat holding surface and forming an adhesive layer that can be repeatedly used for bonding on the holding surface of each mount head;
(2) The semiconductor chip is bonded onto the adhesive layer of the holding surface of the mount head via a second surface so that the semiconductor chips fixed to the wiring mother board are fixedly arranged. A temporary fixing step;
(3) setting the supply unit of the flip chip bonder so that the plurality of mount heads can be sequentially supplied one by one;
During flip chip bonding,
(4) The mounting head in the supply unit is held by a holding rod of the flip chip bonder, and the electrodes of the semiconductor chip are collectively connected to the connection pads of the product forming units of the wiring mother board. Process,
(5) a step of moving the holding rod so that the mount head moves away from the wiring mother board and peeling each semiconductor chip from the adhesive layer attached to the mount head;
The semiconductor device manufacturing method, wherein the semiconductor chip is temporarily fixed to the mount head repeatedly using the adhesive layer of the mount head.

Images