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JP2007271441A - Gas sensor - Google Patents

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JP2007271441A
JP2007271441A JP2006097061A JP2006097061A JP2007271441A JP 2007271441 A JP2007271441 A JP 2007271441A JP 2006097061 A JP2006097061 A JP 2006097061A JP 2006097061 A JP2006097061 A JP 2006097061A JP 2007271441 A JP2007271441 A JP 2007271441A
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resistance
hydrogen
methane
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JP4916205B2 (en
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Hisao Onishi
久男 大西
Katsumi Higaki
勝己 檜垣
Yasuharu Dangi
康晴 談議
Takeshi Hashimoto
橋本  猛
Soichi Tabata
総一 田畑
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Osaka Gas Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a gas sensor which enhances the discrimination properties with methane in the detection of hydrogen and enabling the detection of methane with high precision. <P>SOLUTION: The gas sensor includes a sensor part 3 equipped with a sensor element based on a metal oxide semiconductor and responding to methane and hydrogen, a heating control part 5 for controlling heating so as to periodically transiting the temperature of the sensor element between a high temperature state and a low temperature state, a resistance detection part 6a for detecting the sensor resistance of the sensor element and a gas decision part 6b for respectively deciding the presence of methane and hydrogen. The resistance detection part 6a detects not only first sensor resistance when the sensor element is set to the high temperature state but also second sensor resistance at an intermediate state wherein the sensor element is transited between the high temperature state and the low temperature state. The gas decision part 6b judges not only the presence of methane on the basis of the first sensor resistance but also the presence of hydrogen on the basis of the comparing result value of the second and first sensor resistances. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、金属酸化物半導体を主成分とするセンサ素子の電気抵抗の変化によりメタンを検知するガス検知装置に関し、より具体的には、水素等の雑ガスの干渉を排除することによるメタン検知精度の向上技術に関する。   The present invention relates to a gas detection device that detects methane by a change in electrical resistance of a sensor element mainly composed of a metal oxide semiconductor, and more specifically, methane detection by eliminating interference of miscellaneous gases such as hydrogen. It relates to accuracy improvement technology.

金属酸化物半導体を主成分とする1つのセンサ素子で、検知対象のメタンとメタン検知を干渉する雑ガスとなる水素を弁別して検知可能なガス検知装置として、例えば、下記の特許文献1〜5等に開示された装置がある。センサ素子は、例えば、図11に示すように、センサ素子21の温度調節用の加熱コイル22とセンサ出力用の電極23を金属酸化物半導体24中に埋め込んで加熱コイルと一体化した構成のものがある。加熱コイル22の一端を接地し、加熱コイル22の他端に印加する加熱電圧VHEATの電圧値を周期的に変化させ、センサ素子の温度が低温状態(約80℃)と高温状態(約400℃)の間を周期的に遷移するようにセンサ素子を加熱制御する。センサ素子21の電極23に負荷抵抗25を設けることで、電極23にはセンサ抵抗(電極23と加熱コイル22間の金属酸化物半導体の電気抵抗値)に応じた電圧がセンサ出力として出力される。センサ抵抗はセンサ出力の電圧値から換算可能である。図12に示すように、加熱電圧VHEATの周期的変化に追従してセンサ素子の温度が周期的に変化する。尚、負荷抵抗25の抵抗値は、センサ素子の温度状態に応じて最適値となるように切替制御される。 As a gas detector capable of discriminating and detecting hydrogen, which is a miscellaneous gas that interferes with detection of methane and methane detection, with one sensor element mainly composed of a metal oxide semiconductor, for example, the following patent documents 1 to 5 And the like. For example, as shown in FIG. 11, the sensor element has a structure in which a heating coil 22 for temperature adjustment of the sensor element 21 and an electrode 23 for sensor output are embedded in a metal oxide semiconductor 24 and integrated with the heating coil. There is. One end of the heating coil 22 is grounded, and the voltage value of the heating voltage V HEAT applied to the other end of the heating coil 22 is periodically changed so that the temperature of the sensor element is low (approximately 80 ° C.) and high (approximately 400). The sensor element is controlled to be heated so as to periodically transition between [C. By providing the load resistor 25 on the electrode 23 of the sensor element 21, a voltage corresponding to the sensor resistance (the electric resistance value of the metal oxide semiconductor between the electrode 23 and the heating coil 22) is output to the electrode 23 as a sensor output. . The sensor resistance can be converted from the voltage value of the sensor output. As shown in FIG. 12, the temperature of the sensor element periodically changes following the periodic change of the heating voltage V HEAT . The resistance value of the load resistor 25 is controlled to be an optimum value according to the temperature state of the sensor element.

従来のガス検知装置では、上記低温状態(図12中のC点)におけるセンサ出力より一酸化炭素を選択的に検出し、センサ抵抗に換算可能な高温状態(図12中のA点)におけるセンサ出力よりメタンを選択的に検出し、センサ抵抗に換算可能な高温状態から低温状態へ遷移する中間状態(図12中のB点)におけるセンサ出力より水素を検出する構成となっている。SnO等の金属酸化物半導体を主成分とするセンサ素子は、検知対象ガス種のメタンと一酸化炭素、及び、検知対象ガスの検知を干渉する雑ガスとなる水素に対して、図13に示すような感度特性を示す。図13では、センサ素子の感度つまり検知能は、清浄空気中でのセンサ抵抗と各ガス雰囲気でのセンサ抵抗の比(RAIR/RGAS)で表される。図13より明らかなように、メタンの検知能は高温状態で高く、逆に、一酸化炭素の検知能は低温状態で高く、水素の検知能は高温状態と低温状態の中間状態で高くなる。しかし、水素の検知能は低温及び高温状態でも一定の感度を有するため、メタン及び一酸化炭素の検知を干渉する雑ガスとして働き、水素雰囲気中においてメタン或いは一酸化炭素が存在すると誤検知する場合がある。従って、従来のガス検知装置では、上記中間状態におけるセンサ出力よりセンサ抵抗を求め、水素の存在を判定し、その判定結果に基づいてメタン及び一酸化炭素の感度を補正していた。例えば、メタン濃度3000ppm時の高温状態でのセンサ抵抗を閾値として高温状態でのセンサ抵抗を大小比較して3000ppmメタン濃度を検出して警報を出力する場合に、水素の存在を検知した場合には、同じメタン濃度3000ppmでもセンサ抵抗が下がるために、閾値を低めに補正することで、メタン濃度3000ppm未満の状態での誤警報を防止できる。 In the conventional gas detector, carbon monoxide is selectively detected from the sensor output in the low temperature state (point C in FIG. 12), and the sensor in the high temperature state (point A in FIG. 12) that can be converted into sensor resistance. Methane is selectively detected from the output, and hydrogen is detected from the sensor output in an intermediate state (point B in FIG. 12) where the sensor resistance is converted to a low temperature state. The sensor element mainly composed of a metal oxide semiconductor such as SnO 2 is shown in FIG. 13 for methane and carbon monoxide as detection target gas species and hydrogen as a miscellaneous gas that interferes with detection of the detection target gas. The sensitivity characteristics as shown are shown. In FIG. 13, the sensitivity of the sensor element, that is, the detection ability, is represented by a ratio (R AIR / R GAS ) between the sensor resistance in clean air and the sensor resistance in each gas atmosphere. As is clear from FIG. 13, the detection ability of methane is high in a high temperature state. Conversely, the detection ability of carbon monoxide is high in a low temperature state, and the detection ability of hydrogen is high in an intermediate state between the high temperature state and the low temperature state. However, because the hydrogen detection capability has a certain sensitivity even at low and high temperatures, it works as a miscellaneous gas that interferes with the detection of methane and carbon monoxide, and erroneously detects the presence of methane or carbon monoxide in a hydrogen atmosphere There is. Therefore, in the conventional gas detection device, the sensor resistance is obtained from the sensor output in the intermediate state, the presence of hydrogen is determined, and the sensitivity of methane and carbon monoxide is corrected based on the determination result. For example, if the sensor resistance in the high temperature state when the methane concentration is 3000 ppm is used as a threshold and the sensor resistance in the high temperature state is compared, the 3000 ppm methane concentration is detected and an alarm is output, and the presence of hydrogen is detected. Since the sensor resistance decreases even at the same methane concentration of 3000 ppm, a false alarm can be prevented in a state where the methane concentration is less than 3000 ppm by correcting the threshold value to be lower.

特開2003−185610号公報JP 2003-185610 A 特開2001−208711号公報JP 2001-208711 A 特開2002−82083号公報JP 2002-82083 A 特開平07−198644号公報Japanese Unexamined Patent Publication No. 07-198644 特開昭62−238452号公報JP 62-233842 A

しかしながら、従来のガス検知装置で行っていた中間状態でのセンサ抵抗による水素検知では、図13に示すように、中間状態においてもメタン感度が存在するため、メタン雰囲気中において水素を誤検知する虞があった。図14に、横軸に高温状態でのセンサ抵抗Rをメタン濃度3000ppm時の高温状態でのセンサ抵抗RH−CH4(定数)で正規化した高温正規化抵抗(R/RH−CH4)を取り、縦軸に中間状態でのセンサ抵抗Rをメタン濃度3000ppm時の高温状態でのセンサ抵抗RH−CH4(定数)で正規化した中間正規化抵抗(R/RH−CH4)を取った2次元直交座標空間内に、センサ素子の周囲温度及び相対湿度が20℃、65%時における、190個の測定サンプルに対するメタン濃度が1000ppm、3000ppm、6000ppm、10000ppm時の座標点、及び、水素濃度が500ppmと3000ppm時の座標点を夫々プロットしたものを示す。図14より、縦軸方向に水素の座標点とメタンの座標点が重複していることが分かる。つまり、水素の検知を中間状態でのセンサ抵抗Rで判断すると、メタン雰囲気を水素雰囲気と誤検知する可能性がある。また、メタン濃度3000ppm時にメタン検知の警報を出力するとすれば、図14の横軸の高温正規化抵抗(R/RH−CH4)が1以下の領域が警報出力領域となるが、当該領域内に水素の座標点が存在するため、正しく水素検知ができなければ、水素雰囲気をメタン雰囲気と誤検知する可能性がある。 However, in the hydrogen detection based on the sensor resistance in the intermediate state performed by the conventional gas detection device, as shown in FIG. 13, since methane sensitivity exists even in the intermediate state, there is a risk of erroneously detecting hydrogen in the methane atmosphere. was there. 14, the horizontal axis sensor resistance R H-CH4 (constant) normalized hot normalized resistance of the sensor resistance R H in a high temperature state when the methane concentration 3000ppm at high temperature (R H / R H-CH4 ), And the vertical axis represents the normal normalized resistance (R M / R H-CH4 ) obtained by normalizing the sensor resistance R M in the intermediate state with the sensor resistance R H-CH 4 (constant) in the high temperature state when the methane concentration is 3000 ppm. In the two-dimensional orthogonal coordinate space where the ambient temperature and relative humidity of the sensor element are 20 ° C. and 65%, the coordinate points when the methane concentration for the 190 measurement samples is 1000 ppm, 3000 ppm, 6000 ppm, and 10000 ppm, And the thing which plotted the coordinate point when hydrogen concentration is 500 ppm and 3000 ppm is shown, respectively. FIG. 14 shows that the coordinate point of hydrogen and the coordinate point of methane overlap in the vertical axis direction. That is, when it is determined detection hydrogen sensor resistance R M in the intermediate state, is likely to erroneously detected methane atmosphere with hydrogen atmosphere. If a methane detection alarm is output when the methane concentration is 3000 ppm, a region where the high temperature normalization resistance ( RH / RH-CH4 ) on the horizontal axis in FIG. Since there are hydrogen coordinate points inside, if hydrogen cannot be detected correctly, the hydrogen atmosphere may be erroneously detected as a methane atmosphere.

本発明は上記の問題点に鑑みてなされたものであり、その目的は、水素の検知におけるメタンとの弁別性の向上を図り、高精度なメタン検知を可能とするガス検知装置を提供する点にある。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a gas detection device that improves the discrimination from methane in hydrogen detection and enables highly accurate methane detection. It is in.

上記目的を達成するための本発明に係るガス検知装置は、金属酸化物半導体を主成分とする少なくともメタンと水素に感応して電気抵抗が変化するセンサ素子と、前記センサ素子の温度が高温状態と低温状態間を周期的に遷移するように加熱制御を行う加熱制御部と、前記センサ素子の電気抵抗値または当該電気抵抗値に換算可能な電気抵抗相当値で表されるセンサ抵抗を検出する抵抗検出部と、前記抵抗検出部の検出した前記センサ抵抗に基づいて、メタンと水素の存在を各別に判定するガス判定部と、を備えてなるガス検知装置であって、前記抵抗検出部が、前記加熱制御部による加熱制御により前記センサ素子が前記高温状態にあるときの前記センサ抵抗を第1センサ抵抗として検出し、前記加熱制御部による加熱制御により前記センサ素子が前記高温状態と前記低温状態の間を遷移している中間状態にあるときの前記センサ抵抗を第2センサ抵抗として検出し、前記ガス判定部が、前記第1センサ抵抗に基づいてメタンの存在判定を行い、前記第2センサ抵抗と前記第1センサ抵抗を比較した比較結果値に基づいて水素の存在判定を行うことを第1の特徴とする。   In order to achieve the above object, a gas detection device according to the present invention includes a sensor element whose main component is a metal oxide semiconductor and whose electrical resistance changes in response to at least methane and hydrogen, and the temperature of the sensor element is high. A heating control unit that performs heating control so as to periodically transition between a low temperature state and a sensor resistance represented by an electric resistance value of the sensor element or an electric resistance equivalent value that can be converted into the electric resistance value A gas detection device comprising: a resistance detection unit; and a gas determination unit that individually determines the presence of methane and hydrogen based on the sensor resistance detected by the resistance detection unit, wherein the resistance detection unit includes: The sensor resistance when the sensor element is in the high temperature state is detected as a first sensor resistance by heating control by the heating control unit, and the sensor is detected by heating control by the heating control unit. The sensor resistance when the element is in an intermediate state transitioning between the high temperature state and the low temperature state is detected as a second sensor resistance, and the gas determination unit is configured to detect methane based on the first sensor resistance. The first characteristic is that the presence determination is performed and the presence determination of hydrogen is performed based on a comparison result value obtained by comparing the second sensor resistance with the first sensor resistance.

上記第1の特徴のガス検知装置によれば、ガス判定部が第2センサ抵抗と第1センサ抵抗を比較した比較結果値に基づいて水素の存在判定を行うため、従来の第2センサ抵抗、つまり中間状態での電気抵抗値(センサ抵抗)で水素の存在判定を行う場合(図14参照)に比べて、図15に示すように、メタンとの弁別性が向上し、より高精度に水素の存在判定を行うことができ、結果として高精度のメタンの存在判定が可能となる。これは、高温状態及び中間状態の何れにおいても、水素及びメタンの感度が存在することから、メタン感度が顕著な高温状態と水素感度が顕著な中間状態の各センサ抵抗を比較することで、水素とメタンの弁別性を向上できるという本願発明者の新知見によるものである。尚、図15は、図14に示す分布図の縦軸を、高温正規化抵抗(R/RH−CH4)から、第2センサ抵抗を第1センサ抵抗で除した比較結果値(R/R)に置き換えて表示し直した同じ実験サンプルに基づく分布図である。 According to the gas detector of the first feature, since the gas determination unit performs the presence determination of hydrogen based on the comparison result value obtained by comparing the second sensor resistance and the first sensor resistance, the conventional second sensor resistance, That is, as compared with the case where the presence of hydrogen is determined based on the electrical resistance value (sensor resistance) in the intermediate state (see FIG. 14), as shown in FIG. 15, the discrimination from methane is improved and the hydrogen is more accurately detected. As a result, it is possible to determine the presence of methane with high accuracy. This is because the sensitivity of hydrogen and methane exists in both high temperature and intermediate states. Therefore, by comparing the sensor resistances in the high temperature state where methane sensitivity is remarkable and the intermediate state where hydrogen sensitivity is remarkable, This is based on the inventor's new knowledge that the discrimination between methane and methane can be improved. In FIG. 15, the vertical axis of the distribution chart shown in FIG. 14 is a comparison result value (R M) obtained by dividing the second sensor resistance by the first sensor resistance from the high temperature normalized resistance (R H / R H —CH 4 ). / R H ) is a distribution map based on the same experimental sample re-displayed.

更に、本発明に係るガス検知装置は、上記第1の特徴に加えて、前記ガス判定部が、前記比較結果値に基づいて前記第1センサ抵抗または前記第1センサ抵抗に対する閾値判定に使用する閾値の補正を行い、前記メタンの存在判定を行うことを第2の特徴とする。   Furthermore, in the gas detection device according to the present invention, in addition to the first feature, the gas determination unit is used for determining the first sensor resistance or a threshold for the first sensor resistance based on the comparison result value. The second feature is that the presence of methane is determined by correcting the threshold.

上記第2の特徴のガス検知装置によれば、比較結果値によって水素とメタンの弁別性の向上が図られているため、水素雰囲気中においてメタン検知用の閾値を適正に補正することができ、水素雰囲気中におけるメタンの誤検知を防止できる。   According to the gas detector of the second feature, since the discrimination result between hydrogen and methane is improved by the comparison result value, the threshold for methane detection can be appropriately corrected in the hydrogen atmosphere, Prevents false detection of methane in a hydrogen atmosphere.

更に、本発明に係るガス検知装置は、上記第1または第2の特徴に加えて、前記ガス判定部が、前記比較結果値に基づいて水素がメタンと共存せずに単独で存在するか否かを判定し、当該判定結果に基づいて前記第1センサ抵抗または前記第1センサ抵抗に対する閾値判定に使用する閾値の補正を行い、前記メタンの存在判定を行うことを第3の特徴とする。   Furthermore, in the gas detection device according to the present invention, in addition to the first or second feature, the gas determination unit determines whether hydrogen exists alone without coexisting with methane based on the comparison result value. A third feature is that the determination of the presence of methane is performed by correcting the threshold value used for determining the first sensor resistance or the threshold value for the first sensor resistance based on the determination result.

上記第3の特徴のガス検知装置によれば、比較結果値によって水素とメタンの弁別性の向上が図られているため、水素とメタン混合水素の弁別性も向上することから水素の単独検知が可能となり、水素単独検知時とメタン混合水素検知時を区別した閾値のより適正な補正が可能となり、高精度なメタン検知が可能となる。   According to the gas detector of the third feature, since the discrimination result between hydrogen and methane is improved by the comparison result value, the discrimination between hydrogen and methane mixed hydrogen is also improved. This makes it possible to more appropriately correct the threshold value that distinguishes between when hydrogen alone is detected and when hydrogen is detected in methane, thereby enabling highly accurate methane detection.

更に、本発明に係るガス検知装置は、上記第2または第3の特徴に加えて、前記センサ素子の周囲温度を測定する温度センサを備え、前記ガス判定部が、前記第1センサ抵抗または前記第1センサ抵抗に対する前記閾値判定に使用する閾値を、前記温度センサで測定した前記周囲温度に基づいて補正することを第4の特徴とする。   Furthermore, in addition to the second or third feature, the gas detection device according to the present invention further includes a temperature sensor that measures an ambient temperature of the sensor element, and the gas determination unit includes the first sensor resistor or the A fourth feature is that a threshold value used for the threshold determination for the first sensor resistance is corrected based on the ambient temperature measured by the temperature sensor.

上記第4の特徴のガス検知装置によれば、第2センサ抵抗の周囲温度に対する温度特性により、同じ水素濃度であっても周囲温度により第2センサ抵抗が変化して、水素の存在判定に用いる比較結果値も周囲温度より変化するため、周囲温度に基づいて前記第1センサ抵抗または前記第1センサ抵抗に対する閾値判定に使用する閾値を補正することにより、第2センサ抵抗の周囲温度に対する温度特性を考慮した高精度なメタン検知が可能となる。   According to the gas detector of the fourth feature, the second sensor resistance changes depending on the ambient temperature even when the hydrogen concentration is the same due to the temperature characteristics of the second sensor resistor with respect to the ambient temperature, and is used for determining the presence of hydrogen. Since the comparison result value also changes from the ambient temperature, the temperature characteristic of the second sensor resistor with respect to the ambient temperature is corrected by correcting the threshold used for the threshold determination for the first sensor resistor or the first sensor resistor based on the ambient temperature. High-accuracy methane detection considering

更に、本発明に係るガス検知装置は、上記何れかの特徴に加えて、前記センサ素子の前記金属酸化物半導体が、更に、一酸化炭素に感応して電気抵抗が変化し、前記抵抗検出部が、前記加熱制御部による加熱制御により前記センサ素子が前記低温状態にあるときの前記センサ抵抗を第3センサ抵抗として検出し、前記ガス判定部が、前記第3センサ抵抗に基づいて一酸化炭素の存在判定を行う場合に、前記比較結果値に基づいて前記第3センサ抵抗または前記第3センサ抵抗に対する閾値判定に使用する閾値の補正を行うことを第5の特徴とする。   Furthermore, in addition to any one of the above features, the gas detection device according to the present invention further includes: the metal oxide semiconductor of the sensor element further changes its electric resistance in response to carbon monoxide, and the resistance detection unit However, the sensor resistance when the sensor element is in the low temperature state is detected as a third sensor resistance by heating control by the heating control unit, and the gas determination unit detects carbon monoxide based on the third sensor resistance. The fifth feature is that when the presence determination is performed, the third sensor resistance or a threshold value used for threshold determination for the third sensor resistance is corrected based on the comparison result value.

上記第5の特徴のガス検知装置によれば、水素が一酸化炭素の存在判定においても雑ガスとなるところ、比較結果値によって水素の検知精度が向上しているため、水素雰囲気中において一酸化炭素検知用の閾値を適正に補正することができ、水素雰囲気中における一酸化炭素の誤検知を防止できる。   According to the gas detector of the fifth feature, hydrogen becomes a miscellaneous gas even in the presence determination of carbon monoxide. However, since the hydrogen detection accuracy is improved by the comparison result value, monoxide is oxidized in a hydrogen atmosphere. The threshold value for detecting carbon can be corrected appropriately, and erroneous detection of carbon monoxide in a hydrogen atmosphere can be prevented.

更に、本発明に係るガス検知装置は、上記第5の特徴に加えて、前記センサ素子の周囲温度を測定する温度センサを備え、前記ガス判定部が、前記第3センサ抵抗または前記第3センサ抵抗に対する前記閾値判定に使用する閾値を、前記温度センサで測定した前記周囲温度に基づいて補正することを第6の特徴とする。   Furthermore, in addition to the fifth feature, the gas detection device according to the present invention further includes a temperature sensor that measures the ambient temperature of the sensor element, and the gas determination unit includes the third sensor resistor or the third sensor. A sixth feature is that a threshold value used for the threshold value determination for resistance is corrected based on the ambient temperature measured by the temperature sensor.

上記第6の特徴のガス検知装置によれば、第2センサ抵抗の周囲温度に対する温度特性により、同じ水素濃度であっても周囲温度により第2センサ抵抗が変化して、水素の存在判定に用いる比較結果値も周囲温度より変化するため、周囲温度に基づいて前記第3センサ抵抗または前記第3センサ抵抗に対する閾値判定に使用する閾値を補正することにより、第2センサ抵抗の周囲温度に対する温度特性を考慮した高精度な一酸化炭素検知が可能となる。   According to the gas detector of the sixth feature, the second sensor resistance changes depending on the ambient temperature even when the hydrogen concentration is the same due to the temperature characteristic of the second sensor resistor with respect to the ambient temperature, and is used for determining the presence of hydrogen. Since the comparison result value also changes from the ambient temperature, the temperature characteristic of the second sensor resistor with respect to the ambient temperature is corrected by correcting the third sensor resistor or the threshold used for the threshold determination for the third sensor resistor based on the ambient temperature. This makes it possible to detect carbon monoxide with high accuracy.

更に、本発明に係るガス検知装置は、上記何れかの特徴に加えて、前記ガス判定部が、前記第1センサ抵抗の増減方向と前記比較結果値の増減方向で規定される2次元直交座標空間内において、前記第1センサ抵抗と前記比較結果値で定まる座標点が当該2次元直交座標空間内の所定領域内に存在する場合に、水素の存在を判定することを第7の特徴とする。   Furthermore, in addition to any one of the above features, the gas detection device according to the present invention is a two-dimensional orthogonal coordinate in which the gas determination unit is defined by an increase / decrease direction of the first sensor resistance and an increase / decrease direction of the comparison result value. A seventh feature is that the presence of hydrogen is determined when a coordinate point determined by the first sensor resistance and the comparison result value exists in a predetermined region in the two-dimensional orthogonal coordinate space in the space. .

上記第7の特徴のガス検知装置によれば、水素に加えてエタノールやジメチルエーテル等の複数種の雑ガスを同時に検知することができる。この結果、メタン等の検知対象ガスの選択性が向上する。   According to the gas detector of the seventh feature, it is possible to simultaneously detect plural kinds of miscellaneous gases such as ethanol and dimethyl ether in addition to hydrogen. As a result, the selectivity of the detection target gas such as methane is improved.

以下、本発明に係るガス検知装置(以下、適宜「本発明装置」と略称する)の実施形態を図面に基づいて説明する。   Hereinafter, embodiments of a gas detection device according to the present invention (hereinafter, abbreviated as “the device of the present invention” as appropriate) will be described with reference to the drawings.

〈第1実施形態〉
図1に、本発明装置1の回路構成を示す。図1に示すように、本発明装置1は、金属酸化物半導体を主成分とするメタンと一酸化炭素(CO)の2種類の検出対象ガス、及び、検出対象ガスの検知を干渉する水素等の雑ガスに感応して電気抵抗が変化するセンサ素子を備えて構成されるセンサ部3と、不揮発性記憶手段4と、センサ部3に対しセンサ素子の温度が高温状態と低温状態間を周期的に遷移するように加熱制御を行う加熱制御部5、センサ部3から出力されるセンサ出力に基づいて警報を出力するか否かを判定する判定部6、判定部6の警報出力判定に基づいて警報を出力する警報出力部7、本発明装置1の各部に所定の電力を供給する電源部8、及び、判定部6の警報出力判定処理における温度補正のための温度検出を行うサーミスタ等の温度センサ9を備えたガス警報器として構成される。また、後述するように、加熱制御部5の一部、判定部6、及び、警報出力部7の一部はマイクロプロセッサ2内に構成される。
<First Embodiment>
FIG. 1 shows a circuit configuration of the device 1 of the present invention. As shown in FIG. 1, the device 1 of the present invention includes two types of detection target gases, methane and carbon monoxide (CO), which are mainly composed of a metal oxide semiconductor, and hydrogen that interferes with detection of the detection target gas. The sensor unit 3 is configured to include a sensor element whose electric resistance changes in response to various gases, the nonvolatile storage means 4, and the temperature of the sensor element relative to the sensor unit 3 between the high temperature state and the low temperature state. Heating control unit 5 that performs heating control so as to make a transition, a determination unit 6 that determines whether or not to output an alarm based on a sensor output that is output from the sensor unit 3, and an alarm output determination of the determination unit 6 An alarm output unit 7 that outputs an alarm, a power supply unit 8 that supplies predetermined power to each unit of the device 1 of the present invention, and a thermistor that performs temperature detection for temperature correction in the alarm output determination process of the determination unit 6 Gas alarm with temperature sensor 9 Configured as. Further, as will be described later, a part of the heating control unit 5, a determination unit 6, and a part of the alarm output unit 7 are configured in the microprocessor 2.

センサ部3は、図2に示すように、メタンと一酸化炭素の2種類の検出対象ガスをヒータ(加熱コイル)10の駆動制御により選択的に検出可能な半導体式ガスセンサからなるセンサ素子11による検出対象ガスの検出状態を電気的信号として出力可能に構成され、より具体的には、ヒータ10と一体化して形成されたSiO等の金属酸化物半導体を主成分とする半導体式ガスセンサからなるセンサ素子11のセンサ出力端子12と電源電圧Vccとの間に2つの異なる負荷抵抗R1とR2を並列に設けて構成される。但し、負荷抵抗R2は、スイッチングトランジスタTと直列回路を形成して、センサ出力端子12と電源電圧Vccの間に設けられている。かかる構成により、スイッチングトランジスタTのオン・オフ操作により、検出対象ガスがメタンの場合と一酸化炭素の場合のヒータ10の温度制御の違いによる検出対象ガスの検出/非検出のセンサ出力の振幅を適正に調整することが可能となる。負荷抵抗R1とR2は、本実施形態では固定抵抗で、その抵抗値は、例えば、100kΩと10kΩ等が一例として使用される。尚、センサ出力端子12上に現れるセンサ出力は、ヒータ10の温度制御が100℃前後においては、一酸化炭素の有無によりセンサ出力端子12とヒータ10の接地端子側の間のセンサ素子11の電気抵抗が顕著に変化することで変化し、更に、ヒータ10の温度制御が400〜500℃においては、メタンの有無により上記電気抵抗が顕著に変化することで変化する。スイッチングトランジスタTは、後述するようにヒータ10の駆動制御のタイミングに合わせて本体部1の加熱制御部5からの制御信号によってオン・オフ制御される。 As shown in FIG. 2, the sensor unit 3 includes a sensor element 11 including a semiconductor gas sensor that can selectively detect two types of detection target gases, methane and carbon monoxide, by driving control of a heater (heating coil) 10. The detection state of the detection target gas is configured to be output as an electrical signal. More specifically, the detection target gas includes a semiconductor gas sensor mainly composed of a metal oxide semiconductor such as SiO 2 formed integrally with the heater 10. Two different load resistors R1 and R2 are provided in parallel between the sensor output terminal 12 of the sensor element 11 and the power supply voltage Vcc. However, the load resistor R2 forms a series circuit with the switching transistor T and is provided between the sensor output terminal 12 and the power supply voltage Vcc. With this configuration, the amplitude of the sensor output for detection / non-detection of the detection target gas due to the difference in temperature control of the heater 10 when the detection target gas is methane and carbon monoxide by the on / off operation of the switching transistor T. It becomes possible to adjust appropriately. The load resistors R1 and R2 are fixed resistors in this embodiment, and their resistance values are, for example, 100 kΩ and 10 kΩ, for example. It should be noted that the sensor output appearing on the sensor output terminal 12 is the electric power of the sensor element 11 between the sensor output terminal 12 and the ground terminal side of the heater 10 depending on the presence or absence of carbon monoxide when the temperature control of the heater 10 is around 100 ° C. The resistance changes when the resistance changes remarkably. Further, when the temperature control of the heater 10 is 400 to 500 ° C., the resistance changes depending on the presence or absence of methane. As will be described later, the switching transistor T is ON / OFF controlled by a control signal from the heating control unit 5 of the main body 1 in accordance with the drive control timing of the heater 10.

本実施形態では、センサ素子11のヒータ10の温度制御は、一定電圧(例えば3.3V)の電圧をPWM(パルス幅変調)制御で、つまり、ヒータ10に印加する電圧パルスのオン(電圧印加状態)とオフ(電圧非印加状態)の時間比(デューティー比)を制御して印加することで、実効的な印加電圧の調整を行い、センサ素子11に掛かる温度を制御する。ヒータ10のPWM制御による印加電圧波形と実効的な印加電圧波形の一例を図3に示す。図3に示す例では、実効的な印加電圧は、5秒間の高温駆動時に0.9V、10秒間の低温駆動時に0.2VとなるようにPWM制御される。また、図3に、当該印加電圧波形での加熱制御によるセンサ素子11に掛かる温度変化を印加電圧波形の下側に併記する。   In the present embodiment, the temperature control of the heater 10 of the sensor element 11 is performed by PWM (pulse width modulation) control of a constant voltage (for example, 3.3 V), that is, the voltage pulse applied to the heater 10 is turned on (voltage application). By controlling the time ratio (duty ratio) between the (state) and off (voltage non-applied state), the effective applied voltage is adjusted and the temperature applied to the sensor element 11 is controlled. An example of the applied voltage waveform by the PWM control of the heater 10 and an effective applied voltage waveform are shown in FIG. In the example shown in FIG. 3, the effective applied voltage is PWM controlled so as to be 0.9 V at a high temperature drive for 5 seconds and 0.2 V at a low temperature drive for 10 seconds. In FIG. 3, the temperature change applied to the sensor element 11 by the heating control with the applied voltage waveform is also shown below the applied voltage waveform.

不揮発性記憶手段4は、電気的に情報の読み出し・書き込み・消去が可能なEEPROM等の不揮発性半導体メモリからなり、本発明装置1に関する各種情報を記憶する。不揮発性記憶手段4に記憶される情報としては、例えば、本発明装置1の製造年月日、製造番号、メーカ名、製品コード、警報出力設定値、センサ部3の検出特性のバラツキを調整するための調整パラメータ、後述する水素等の雑ガス検知用の各種パラメータ、温度補正用のパラメータ、加熱制御部5がセンサ部3に対する加熱制御用の制御パラメータ、判定部6がセンサ部3から出力されるセンサ出力に基づいて警報出力判定を行う際の判定基準値等が挙げられる。   The non-volatile storage means 4 is composed of a non-volatile semiconductor memory such as an EEPROM that can electrically read, write, and erase information, and stores various information related to the device 1 of the present invention. As information stored in the non-volatile storage means 4, for example, the manufacturing date, manufacturing number, manufacturer name, product code, alarm output set value, and variation in detection characteristics of the sensor unit 3 are adjusted. Adjustment parameters, various parameters for detecting miscellaneous gases such as hydrogen, which will be described later, parameters for temperature correction, heating control unit 5 is a control parameter for heating control for sensor unit 3, and determination unit 6 is output from sensor unit 3. The determination reference value when the alarm output determination is performed based on the sensor output.

加熱制御部5は、センサ素子11のヒータ10に印加する電圧パルスを駆動するセンサ駆動部5aとセンサ駆動部5aが駆動する電圧パルスの駆動タイミングと電圧パルスのデューティー比を制御するパルス制御部5bとを備えて構成される。加熱制御部5のパルス制御部5bは、マイクロプロセッサ2内に構成され、制御パラメータを不揮発性記憶手段4から読み出し、当該制御パラメータの各電圧パルス印加の開始タイミング、終了タイミング、そのデューティー比で、対応する電圧パルスの駆動タイミングとデューティー比を制御し、当該制御に従って、センサ駆動部5aがセンサ部3内のヒータ10を、図3に示す温度制御パターンとなるように駆動する。マイクロプロセッサ2は、プログラム格納用のROMやRAMを内蔵したマイクロコンピュータを含み、当該ROMやRAMを内蔵するか外付けで備えるかは問わない。   The heating controller 5 includes a sensor driver 5a that drives a voltage pulse applied to the heater 10 of the sensor element 11, and a pulse controller 5b that controls the drive timing of the voltage pulse driven by the sensor driver 5a and the duty ratio of the voltage pulse. And is configured. The pulse control unit 5b of the heating control unit 5 is configured in the microprocessor 2, reads out the control parameter from the nonvolatile storage unit 4, and at the start timing, end timing, and duty ratio of each voltage pulse application of the control parameter, The drive timing and duty ratio of the corresponding voltage pulse are controlled, and according to the control, the sensor drive unit 5a drives the heater 10 in the sensor unit 3 so as to have the temperature control pattern shown in FIG. The microprocessor 2 includes a microcomputer incorporating a ROM and RAM for storing programs, and it does not matter whether the ROM or RAM is incorporated or provided externally.

判定部6は、抵抗検出部6aとガス判定部6bを備えて構成される。抵抗検出部6aは、不揮発性記憶手段4に記憶されている制御パラメータの内のメタン検出用のセンサ出力の検出タイミング(図3中のt点)と、水素検出用のセンサ出力の検出タイミング(図3中のt点)と、一酸化炭素検出用のセンサ出力の検出タイミング(図3中のt点)で、夫々のセンサ出力を読み込み、読み込まれた各センサ出力から、メタン検出タイミング(t)におけるセンサ抵抗を第1センサ抵抗Rとして、水素検出タイミング(t)におけるセンサ抵抗を第2センサ抵抗Rとして、CO検出タイミング(t)におけるセンサ抵抗を第3センサ抵抗Rとして、夫々算出する。図3に示すように、高温駆動開始後5秒時点のメタン検出タイミング(t)ではセンサ素子11の温度は高温状態にあり、高温駆動開始後5.6秒(低温駆動開始後0.6秒)時点の水素検出タイミング(t)ではセンサ素子11の温度は高温状態と低温状態の中間状態にあり、高温駆動開始後15秒(低温駆動開始後10秒)時点のCO検出タイミング(t)ではセンサ素子11の温度は低温状態にある。尚、各検出タイミング(t,t,t)におけるセンサ出力は、各検出タイミング(t,t,t)に至る手前から数m秒(例えば8m秒)間隔で所定回(例えば16回)読み込み、それらの平均値を算出して使用する。 The determination unit 6 includes a resistance detection unit 6a and a gas determination unit 6b. Resistance detection unit 6a includes a detection timing of the sensor output for methane detection of the control parameters stored in the nonvolatile storage unit 4 (t H point in Fig. 3), the detection timing of the sensor output for hydrogen detection and (t M point in FIG. 3), at the detection timing of the sensor output for carbon monoxide detector (t L point in FIG. 3), reads the sensor output of each, from the sensor output read, methane detection the sensor resistance at time (t H) as a first sensor resistance R H, the sensor resistance in the hydrogen detection timing (t M) as the second sensor resistance R M, the third sensor to sensor resistance in the CO detection timing (t L) It calculates as resistance RL , respectively. As shown in FIG. 3, at the methane detection timing (t H ) at 5 seconds after the start of the high temperature drive, the temperature of the sensor element 11 is in a high temperature state, and 5.6 seconds after the start of the high temperature drive (0.6 (Second) at the hydrogen detection timing (t M ), the temperature of the sensor element 11 is in an intermediate state between the high temperature state and the low temperature state, and the CO detection timing (t In L ), the temperature of the sensor element 11 is in a low temperature state. The sensor output at each detection timing (t H, t M, t L) , each detection timing (t H, t M, t L) number m seconds from the front leading to (e.g., 8m seconds) prescribed times intervals ( (For example, 16 times), and the average value is calculated and used.

ここで、センサ出力を適切な分解能が得られる電圧範囲内で読む込むために、負荷抵抗R1とR2の切替制御が加熱制御部5により行われる。加熱制御部5は、センサ素子11のスイッチングトランジスタTのオン・オフ制御を、図3に示す温度制御パターンの加熱制御に同期して行う。具体的には、高温駆動時の中間(開始後約2.5秒)から低温駆動時の中間(開始後約5秒)までのメタン検出タイミング(t)と水素検出タイミング(t)を含む期間中にスイッチングトランジスタTをオフし、低温駆動時の中間(開始後約5秒)から高温駆動時の中間(開始後約2.5秒)までのCO検出タイミング(t)含む期間中にスイッチングトランジスタTをオンさせる。つまり、メタン及び水素検出時の負荷抵抗RLHMはR1となり、一酸化炭素検出時の負荷抵抗RLはR3(=R1・R2/(R1+R2))となる。 Here, in order to read the sensor output within a voltage range where an appropriate resolution can be obtained, switching control of the load resistances R1 and R2 is performed by the heating control unit 5. The heating control unit 5 performs on / off control of the switching transistor T of the sensor element 11 in synchronization with the heating control of the temperature control pattern shown in FIG. Specifically, the methane detection timing (t H ) and the hydrogen detection timing (t M ) from the middle during high temperature driving (about 2.5 seconds after the start) to the middle during low temperature driving (about 5 seconds after the start) The switching transistor T is turned off during the period including the CO detection timing (t L ) from the middle during the low temperature driving (about 5 seconds after the start) to the middle during the high temperature driving (about 2.5 seconds after the start). The switching transistor T is turned on. That is, the load resistance RL HM when detecting methane and hydrogen is R1, and the load resistance RL L when detecting carbon monoxide is R3 (= R1 · R2 / (R1 + R2)).

ガス判定部6bは、抵抗検出部6aで検出された第1センサ抵抗Rに基づいてメタンの存在(濃度が検出規定濃度以上か否か)を判定し、抵抗検出部6aで検出された第3センサ抵抗Rに基づいて一酸化炭素の存在(濃度が検出規定濃度以上か否か)を判定する。また、ガス判定部6bは、温度センサ9が検出した周囲温度からメタン判定及び一酸化炭素判定に用いられる第1センサ抵抗Rと第3センサ抵抗Rに対する各温度補正係数を算出して温度補正を行う。更に、ガス判定部6bは、抵抗検出部6aで検出された第1センサ抵抗Rと第2センサ抵抗Rの後述する比較結果値に基づいて水素の存在を判定し、水素の存在が判定された場合は、第1センサ抵抗Rと第3センサ抵抗Rを夫々補正する。ガス判定部6bは、メタンの濃度がメタンの検出規定濃度以上の場合は、内蔵レジスタ内のメタン検知ビットを「1」にセットし、ガス漏れが発生していると判定してガス漏れ判定信号を出力する。また、ガス判定部6bは、一酸化炭素の濃度が検出規定濃度以上の場合は、内蔵レジスタ内のCO検知ビットを「1」にセットし、不完全燃焼状態であると判定して不完全燃焼判定信号を出力する。更に、ガス判定部6bは、比較結果値に基づいて水素の存在を判定すると、内蔵レジスタ内の水素検知ビットを「1」にセットし、水素検出信号を出力する。 The gas determining unit 6b determines the presence of methane (whether the concentration is equal to or higher than the detection specified concentration) based on the first sensor resistance RH detected by the resistance detecting unit 6a, and the gas detecting unit 6a detects the first detected by the resistance detecting unit 6a. The presence of carbon monoxide (whether the concentration is equal to or higher than the detection specified concentration) is determined based on the three-sensor resistance RL . In addition, the gas determination unit 6b calculates the temperature correction coefficient for each of the first sensor resistance RH and the third sensor resistance RL used for the methane determination and the carbon monoxide determination from the ambient temperature detected by the temperature sensor 9. Make corrections. Further, the gas determination unit 6b includes a first sensor resistance R H, which is detected by the resistance detection unit 6a on the basis of the comparison result value to be described later of the second sensor resistor R M to determine the presence of hydrogen, the presence of hydrogen determination If it has been corrected, the first sensor resistance RH and the third sensor resistance RL are corrected. The gas determination unit 6b sets the methane detection bit in the built-in register to “1” when the methane concentration is equal to or higher than the methane detection regulation concentration, determines that a gas leak has occurred, and determines a gas leak determination signal. Is output. In addition, when the concentration of carbon monoxide is equal to or higher than the detection specified concentration, the gas determination unit 6b sets the CO detection bit in the built-in register to “1”, determines that it is in an incomplete combustion state, and performs incomplete combustion. Outputs a judgment signal. Further, when the gas determination unit 6b determines the presence of hydrogen based on the comparison result value, it sets the hydrogen detection bit in the built-in register to “1” and outputs a hydrogen detection signal.

判定部6は、本体部1に設けられたマイクロプロセッサ2内に構成され、センサ出力(アナログ値)は、マイクロプロセッサ2の所定のアナログポートから入力され、マイクロプロセッサ2内のA/D変換部でサンプリングされ、ディジタル化される。この時のサンプリングタイミングが、制御パラメータの内の各検出対象ガスのセンサ出力の検出タイミングで規定される。また、温度センサ9の温度検出出力(アナログ値)もマイクロプロセッサ2の所定のアナログポートから入力され、マイクロプロセッサ2内のA/D変換部でサンプリングされ、ディジタル化される。   The determination unit 6 is configured in a microprocessor 2 provided in the main body unit 1, and a sensor output (analog value) is input from a predetermined analog port of the microprocessor 2, and an A / D conversion unit in the microprocessor 2. Sampled and digitized. The sampling timing at this time is defined by the detection timing of the sensor output of each detection target gas in the control parameters. Further, the temperature detection output (analog value) of the temperature sensor 9 is also input from a predetermined analog port of the microprocessor 2, sampled by the A / D converter in the microprocessor 2, and digitized.

警報出力部7は、3色(緑、赤、黄)のLED14aを有するLED表示回路からなる光警報出力部14、音声回路15aとスピーカ15bからなる音声警報出力部15、判定部6の警報出力判定情報を外部に電圧レベルによって出力する外部出力回路16、判定部6の警報出力判定に基づいて光警報出力部14、音声警報出力部15、及び、外部出力回路16に対して所定の制御信号を出力する警報出力制御部17を備えて構成される。ここで、警報出力制御部17は、本体部1に設けられたマイクロプロセッサ2内に構成される。警報出力制御部17は、判定部6の警報出力判定(ガス漏れ判定信号、不完全燃焼判定信号、水素検出信号)に基づいて、警報を出力すべき状態においては、光警報出力部14、音声警報出力部15、及び、外部出力回路16に対して所定の制御信号を出力し、光警報出力部14、音声警報出力部15、及び、外部出力回路16が所定の警報を出力できるように制御する。   The alarm output unit 7 includes an optical alarm output unit 14 including an LED display circuit having three color (green, red, and yellow) LEDs 14a, an audio alarm output unit 15 including an audio circuit 15a and a speaker 15b, and an alarm output of the determination unit 6. A predetermined control signal for the external output circuit 16 that outputs the determination information to the outside according to the voltage level, the light alarm output unit 14, the sound alarm output unit 15, and the external output circuit 16 based on the alarm output determination of the determination unit 6 The alarm output control part 17 which outputs is comprised. Here, the alarm output control unit 17 is configured in the microprocessor 2 provided in the main body unit 1. Based on the alarm output determination (gas leak determination signal, incomplete combustion determination signal, hydrogen detection signal) of the determination unit 6, the alarm output control unit 17 is configured to output the light alarm output unit 14, sound, A predetermined control signal is output to the alarm output unit 15 and the external output circuit 16, and the light alarm output unit 14, the audio alarm output unit 15, and the external output circuit 16 are controlled so as to output a predetermined alarm. To do.

電源部8は、電源トランス、平滑回路、及び、定電圧回路等を備えて構成され、例えば、家庭用の商用交流電圧100Vから直流低電圧(例えば、5V、3.3V)を生成する。   The power supply unit 8 includes a power transformer, a smoothing circuit, a constant voltage circuit, and the like, and generates a DC low voltage (for example, 5 V, 3.3 V) from a commercial AC voltage 100 V for home use, for example.

次に、図1に示す本発明装置1の判定部6のメタン検知処理、水素検知処理、及び、CO検知処理の各動作について、図4乃至図6に示すフローチャートに基づいて説明する。尚、加熱制御部5はセンサ素子11に対して上述の加熱制御及びスイッチングトランジスタTのオン・オフ制御を別途並行して実行している。尚、メタン検知処理、水素検知処理、及び、CO検知処理は、マイクロプロセッサ2内でCPUが各処理手順を記述したプログラムを実行することより実現される。   Next, each operation | movement of the methane detection process of the determination part 6 of this invention apparatus 1 shown in FIG. 1 and a hydrogen detection process, and CO detection process is demonstrated based on the flowchart shown in FIG. 4 thru | or FIG. The heating control unit 5 separately performs the above-described heating control and on / off control of the switching transistor T on the sensor element 11 in parallel. Note that the methane detection process, the hydrogen detection process, and the CO detection process are realized by the CPU executing a program describing each processing procedure in the microprocessor 2.

先ず、メタン検知処理(図4参照)を開始し、判定部6は前回までのメタン検知処理、及び、水素検知処理において判定した判定結果(メタン検知ビット、水素検知ビット)に基づいて、継続してガス漏れ判定信号及び水素検出信号を出力する(ステップ#1)。   First, methane detection processing (see FIG. 4) is started, and the determination unit 6 continues based on the determination results (methane detection bit, hydrogen detection bit) determined in the previous methane detection processing and hydrogen detection processing. The gas leak determination signal and the hydrogen detection signal are output (step # 1).

次に、抵抗検出部6aが、メタン検出タイミング(t)におけるセンサ出力Vと水素検出タイミング(t)におけるセンサ出力Vを読み込む(ステップ#2)。 Then, the resistance detection part 6a reads the sensor output V M at the sensor output V H and hydrogen detection timing in the methane detection timing (t H) (t M) ( Step # 2).

次に、ガス判定部6bは、メタン検出タイミング(t)直近の高温駆動時において、温度センサ9が検出した周囲温度を一定間隔(例えば0.1秒間隔)で所定回(例えば16回)読み込み、それらの平均値を算出して周囲温度Tとする(ステップ#3)。 Next, the gas determination unit 6b determines the ambient temperature detected by the temperature sensor 9 at predetermined intervals (for example, 16 seconds) at a predetermined time (for example, 16 times) at the time of high-temperature driving closest to the methane detection timing (t H ). The average value of these is read and the ambient temperature T is calculated (step # 3).

次に、抵抗検出部6aは、センサ出力Vとメタン検知時の負荷抵抗RLHM(=R1)と電源電圧Vccより、下記の数1に示す算出式より、第1センサ抵抗Rを算出する(ステップ#4)。 Then, the resistance detection section 6a, calculates the sensor output V H and methane detection time of the load resistor RL HM and (= R1) than the power supply voltage Vcc, from calculation formula shown in Formula 1 below, a first sensor resistance R H (Step # 4).

(数1)
=V×RLHM/(Vcc−V
(Equation 1)
R H = V H × RL HM / (Vcc−V H )

次に、ガス判定部6bは、周囲温度Tからメタン検知時の温度補正係数Kを算出する(ステップ#5)。具体的には、不揮発性記憶手段4に記憶されている周囲温度が−10℃、0℃、20℃、50℃における各温度補正係数Kを補間処理して周囲温度Tにおける温度補正係数Kを算出する。 Next, the gas determination unit 6b calculates a temperature correction coefficient K H when methane detection from ambient temperature T (step # 5). Specifically, the temperature correction coefficient K at the ambient temperature T is obtained by interpolating the temperature correction coefficients K H when the ambient temperature stored in the nonvolatile storage means 4 is −10 ° C., 0 ° C., 20 ° C., and 50 ° C. H is calculated.

次に、ガス判定部6bは、第1センサ抵抗Rとメタン濃度3000ppm時のメタン検出タイミング(t)におけるセンサ抵抗RH−CH4(定数)と温度補正係数Kより、メタン濃度が3000ppm以上か否かを、下記の数2に示す判定式により判定する(ステップ#6)。数2に示す判定式が成立するとメタン判定(メタン濃度が3000ppm以上)となる。 Next, the gas determination unit 6b from the sensor resistance R H-CH4 (constant) and the temperature correction coefficient K H of the first sensor resistor R H and methane detection timing at methane concentration 3000ppm (t H), the methane concentration 3000ppm Whether it is the above or not is determined by the determination formula shown in the following equation (step # 6). When the determination formula shown in Equation 2 is established, the methane determination (methane concentration is 3000 ppm or more) is made.

(数2)
/(RH−CH4×K)<1
(Equation 2)
R H / (R H—CH 4 × K H ) <1

ステップ#6においてメタン判定の場合(YES)は、水素検知処理(図5参照)に移行する。メタン判定でない場合(NO)は、水素検知処理(図5参照)に移行せずに、メタン検知ビットを「0」にリセットする(ステップ#7)。ここで、メタン検知ビットが「1」であった場合は、ガス漏れ警報が解除される。更に、ステップ#7に引き続き、水素検知処理を行わずに水素の非存在を仮定して、水素検知ビットを「0」にリセットして(ステップ#8)、CO検知処理(図6参照)に移行する。   In the case of methane determination in Step # 6 (YES), the process proceeds to the hydrogen detection process (see FIG. 5). If it is not methane determination (NO), the methane detection bit is reset to “0” without proceeding to the hydrogen detection process (see FIG. 5) (step # 7). Here, when the methane detection bit is “1”, the gas leak alarm is canceled. Further, following step # 7, assuming that hydrogen is not present without performing the hydrogen detection process, the hydrogen detection bit is reset to “0” (step # 8), and the CO detection process (see FIG. 6) is performed. Transition.

次に、水素検知処理(図5参照)について説明する。メタン検知処理(図4参照)のステップ#6においてメタン判定の場合(YES)、抵抗検出部6aは、センサ出力Vとメタン検知時の負荷抵抗RLHM(=R1)と電源電圧Vccより、下記の数3に示す算出式より、第2センサ抵抗Rを算出する(ステップ#11)。 Next, the hydrogen detection process (see FIG. 5) will be described. If at step # 6 of methane detection processing (see FIG. 4) of methane determination (YES), the resistance detection unit 6a, the sensor output V M and methane detection time of the load resistor RL HM and (= R1) than the power supply voltage Vcc, The second sensor resistance RM is calculated from the calculation formula shown in Equation 3 below (step # 11).

(数3)
=V×RLHM/(Vcc−V
(Equation 3)
R M = V M × RL HM / (Vcc−V M )

次に、ガス判定部6bは、周囲温度Tから水素検知時における閾値Sの温度補正係数Kを算出する(ステップ#12)。具体的には、不揮発性記憶手段4に記憶されている周囲温度が−10℃、0℃、20℃、50℃における各温度補正係数Kを補間処理して周囲温度Tにおける温度補正係数Kを算出する。 Next, the gas determination unit 6b calculates a temperature correction coefficient K S of the threshold value S when hydrogen is detected from the ambient temperature T (step # 12). Specifically, the temperature correction coefficient K at the ambient temperature T is obtained by interpolating each temperature correction coefficient K S when the ambient temperature stored in the nonvolatile storage means 4 is −10 ° C., 0 ° C., 20 ° C., and 50 ° C. S is calculated.

次に、ガス判定部6bは、第2センサ抵抗Rを第1センサ抵抗Rで除した比較結果値と閾値Sに温度補正係数Kを乗じた温度補正後の閾値(S×K)を、下記の数4に示す判定式により大小比較して、水素単独雰囲気または水素含有メタン雰囲気であるか否かを判定する(ステップ#13)。数4に示す判定式が成立すると水素判定(水素単独雰囲気または水素含有メタン雰囲気)となる。 Next, the gas determination unit 6b, a second sensor resistance R M of the first sensor resistance R H in dividing the comparison result value and the threshold value S of the temperature correction coefficient K S a multiplying temperature corrected threshold (S × K S ) In accordance with the determination formula shown in the following equation 4, it is determined whether the atmosphere is a hydrogen-only atmosphere or a hydrogen-containing methane atmosphere (step # 13). When the determination formula shown in Equation 4 is satisfied, a hydrogen determination (hydrogen alone atmosphere or hydrogen-containing methane atmosphere) is made.

(数4)
/R<S×K
(Equation 4)
R M / R H <S × K S

尚、数4に示す判定式での閾値Sは、所定の基準温度及び基準相対湿度(例えば、20℃、65%)における水素を含まない各種メタン濃度におけるメタン雰囲気中で複数のサンプルから求めた複数のR/Rの分布範囲の下限値より僅かに低めに設定される。例えば、図7に示すように、各種メタン濃度におけるメタン雰囲気に対して水素が1000ppm含有されると、R/Rの分布範囲は下に移動することが分かる。これより、数4に示す判定式により、水素単独雰囲気または水素含有メタン雰囲気を検知できることが分かる。 The threshold value S in the determination formula shown in Equation 4 was obtained from a plurality of samples in a methane atmosphere at various methane concentrations not containing hydrogen at a predetermined reference temperature and reference relative humidity (for example, 20 ° C., 65%). It is set slightly lower than the lower limit value of the distribution range of the plurality of R M / RH . For example, as shown in FIG. 7, when 1000 ppm of hydrogen is contained in the methane atmosphere at various methane concentrations, it can be seen that the distribution range of R M / RH moves downward. From this, it can be seen that the hydrogen alone atmosphere or the hydrogen-containing methane atmosphere can be detected by the judgment formula shown in Equation 4.

ステップ#13において水素判定でない場合(NO)は、メタン検知ビットを「1」にセットして、ガス漏れ判定信号を出力し(ステップ#14)、水素検知ビットを「0」にリセットして、CO検知処理(図6参照)に移行する(ステップ#15)。   If it is not a hydrogen determination in step # 13 (NO), the methane detection bit is set to “1”, a gas leak determination signal is output (step # 14), the hydrogen detection bit is reset to “0”, The process proceeds to the CO detection process (see FIG. 6) (step # 15).

ステップ#13において水素判定の場合(YES)は、水素検知ビットを「1」にセットして、水素検知信号を出力する(ステップ#16)。   In the case of hydrogen determination in step # 13 (YES), the hydrogen detection bit is set to “1” and a hydrogen detection signal is output (step # 16).

引き続き、メタン検知処理のステップ#6で行ったメタン判定を補正するために、ガス判定部6bは、周囲温度Tから第1センサ抵抗Rに対する水素検知時における補正係数Fの温度補正係数Kを算出する(ステップ#17)。具体的には、不揮発性記憶手段4に記憶されている周囲温度が−10℃、0℃、20℃、50℃における各温度補正係数Kを補間処理して周囲温度Tにおける温度補正係数Kを算出する。尚、補正係数Fは不揮発性記憶手段4に記憶されている値を読み出して使用する。 Subsequently, in order to correct the methane determination performed in step # 6 of the methane detection process, the gas determination unit 6b performs the temperature correction coefficient K F of the correction coefficient F during hydrogen detection from the ambient temperature T to the first sensor resistance RH . Is calculated (step # 17). More specifically, the temperature correction coefficient K at the ambient temperature T is obtained by interpolating the temperature correction coefficients K F when the ambient temperature stored in the nonvolatile storage means 4 is −10 ° C., 0 ° C., 20 ° C., and 50 ° C. F is calculated. As the correction coefficient F, a value stored in the nonvolatile storage means 4 is read and used.

次に、ガス判定部6bは、第1センサ抵抗Rとメタン濃度3000ppm時のメタン検出タイミング(t)におけるセンサ抵抗RH−CH4(定数)、温度補正係数K、補正係数F、及び、温度補正係数Kより、水素検知時においてメタン濃度が3000ppm以上か否かを、下記の数5に示す判定式により判定する(ステップ#18)。数5に示す判定式が成立するとメタン判定(メタン濃度が3000ppm以上)となる。 Next, the gas determination unit 6b includes the first sensor resistance RH and the sensor resistance RH-CH4 (constant) at the methane detection timing (t H ) when the methane concentration is 3000 ppm, the temperature correction coefficient K H , the correction coefficient F, and , the temperature correction coefficient K F, the methane concentration at the time of hydrogen detecting whether or 3000 ppm, determined by the determination formula shown in equation 5 below (step # 18). When the determination formula shown in Equation 5 is satisfied, the methane determination (methane concentration is 3000 ppm or more) is made.

(数5)
/(RH−CH4×K×F×K)<1
(Equation 5)
R H / (R H —CH 4 × K H × F × K F ) <1

図7に示すように、水素含有メタン雰囲気では、同じメタン濃度であっても、R/RH−CH4が僅かに低めにシフトすることから、補正係数Fと温度補正係数Kによる水素検知時の補正がない場合は、メタン濃度が3000ppm未満でも、メタン濃度3000ppm以上と誤判定される虞がある。補正係数Fと温度補正係数Kは当該R/RH−CH4の水素含有によるシフトを補正するものである。 As shown in FIG. 7, in the hydrogen-containing methane atmosphere, even when the methane concentration is the same, R H / R H —CH 4 shifts slightly lower, so that hydrogen detection using the correction coefficient F and the temperature correction coefficient K F If there is no correction for time, there is a possibility that a methane concentration of 3000 ppm or higher is erroneously determined even if the methane concentration is less than 3000 ppm. The correction coefficient F and the temperature correction coefficient K F are used to correct the shift due to the hydrogen content of the R H / R H —CH 4 .

ステップ#16においてメタン判定の場合(YES)は、メタン検知ビットを「1」にセットして、ガス漏れ判定信号を出力し、CO検知処理(図6参照)に移行する(ステップ#19)。メタン判定でない場合(NO)は、メタン検知ビットを「0」にリセットして、CO検知処理(図6参照)に移行する(ステップ#20)。ここで、メタン検知ビットが「1」であった場合は、ガス漏れ警報が解除される。   In the case of methane determination in step # 16 (YES), the methane detection bit is set to “1”, a gas leak determination signal is output, and the routine proceeds to CO detection processing (see FIG. 6) (step # 19). If it is not methane determination (NO), the methane detection bit is reset to “0”, and the process proceeds to the CO detection process (see FIG. 6) (step # 20). Here, when the methane detection bit is “1”, the gas leak alarm is canceled.

次に、CO検知処理(図6参照)について説明する。メタン検知処理(図4参照)または水素検知処理(図5参照)からCO検知処理に移行すると、先ず、判定部6は前回までのCO検知処理において判定した判定結果(CO検知ビット、水素検知ビット)に基づいて、継続して不完全燃焼判定信号及び水素検出信号を出力する(ステップ#21)。   Next, the CO detection process (see FIG. 6) will be described. When shifting from the methane detection process (see FIG. 4) or the hydrogen detection process (see FIG. 5) to the CO detection process, the determination unit 6 first determines the determination results (CO detection bit, hydrogen detection bit) determined in the previous CO detection process. ), The incomplete combustion determination signal and the hydrogen detection signal are continuously output (step # 21).

次に、抵抗検出部6aが、CO検出タイミング(t)におけるセンサ出力Vを読み込む(ステップ#22)。 Next, the resistance detection unit 6a reads the sensor output V L at the CO detection timing (t L ) (step # 22).

次に、ガス判定部6bは、CO検出タイミング(t)直近の低温駆動時において、温度センサ9が検出した周囲温度を一定間隔(例えば0.1秒間隔)で所定回(例えば16回)読み込み、それらの平均値を算出して周囲温度Tとする(ステップ#23)。 Next, the gas determination unit 6b determines the ambient temperature detected by the temperature sensor 9 at a predetermined interval (for example, an interval of 0.1 seconds) a predetermined number of times (for example, 16 times) at the time of low temperature driving closest to the CO detection timing (t L ) The average value is read and set as the ambient temperature T (step # 23).

次に、抵抗検出部6aは、センサ出力Vと一酸化炭素検知時の負荷抵抗RL(=R3)と電源電圧Vccより、下記の数6に示す算出式より、第3センサ抵抗Rを算出する(ステップ#24)。 Next, the resistance detector 6a calculates the third sensor resistance R L from the sensor output V L , the load resistance RL L (= R3) at the time of detecting carbon monoxide, and the power supply voltage Vcc according to the calculation formula shown below. Is calculated (step # 24).

(数6)
=V×RL/(Vcc−V
(Equation 6)
R L = V L × RL L / (Vcc−V L )

次に、ガス判定部6bは、周囲温度Tから一酸化炭素検知時の温度補正係数Kを算出する(ステップ#25)。具体的には、不揮発性記憶手段4に記憶されている周囲温度が−10℃、0℃、20℃、50℃における各温度補正係数Kを補間処理して周囲温度Tにおける温度補正係数Kを算出する。 Next, the gas determination unit 6b calculates a temperature correction coefficient K L during the carbon monoxide sensing from the ambient temperature T (step # 25). Specifically, the ambient temperature which is stored in the nonvolatile storage means 4 -10 ° C., 0 ° C., 20 ° C., the temperature correction coefficient K in the ambient temperature T by interpolation processing each temperature correction coefficient K L at 50 ° C. L is calculated.

次に、水素検知ビットが「1」の場合に、ガス判定部6bは、周囲温度Tから第3センサ抵抗Rに対する水素検知時における補正係数Gの温度補正係数Kを算出する(ステップ#26)。具体的には、不揮発性記憶手段4に記憶されている周囲温度が−10℃、0℃、20℃、50℃における各温度補正係数Kを補間処理して周囲温度Tにおける温度補正係数Kを算出する。尚、補正係数Gは不揮発性記憶手段4に記憶されている値を読み出して使用する。水素検知ビットが「0」の場合は、ステップ#26は実行せず次ステップ(ステップ#27)に移行する。 Next, when the hydrogen-detection bit is "1", the gas determination unit 6b calculates a temperature correction coefficient K G of the correction coefficient G during hydrogen detection for the third sensor resistance R L from ambient temperature T (step # 26). Specifically, -10 ° C. ambient temperature which is stored in the nonvolatile storage means 4, 0 ℃, 20 ℃, the temperature correction coefficient K in the ambient temperature T by interpolation processing each temperature correction coefficient K G at 50 ° C. G is calculated. As the correction coefficient G, a value stored in the nonvolatile storage means 4 is read and used. If the hydrogen detection bit is “0”, step # 26 is not executed and the process proceeds to the next step (step # 27).

次に、ガス判定部6bは、水素検知ビットが「0」の場合は、第3センサ抵抗Rと一酸化炭素濃度300ppm時のCO検出タイミング(t)におけるセンサ抵抗RL−CO(定数)と温度補正係数Kより、一酸化炭素濃度が300ppm以上か否かを、下記の数7に示す判定式により判定する(ステップ#27)。水素検知ビットが「1」の場合は、水素の存在によって第3センサ抵抗Rが干渉を受けるため、温度補正係数Kによる補正に加えて、補正係数Gによる補正も行う。従って、水素検知時において一酸化炭素濃度が300ppm以上か否かを、第3センサ抵抗R、センサ抵抗RL−CO(定数)、温度補正係数K、補正係数G、及び、温度補正係数Kに基づき、下記の数8に示す判定式により判定する(ステップ#27)。数7または数8に示す判定式が成立するとCO判定(一酸化炭素濃度が300ppm以上)となる。 Next, when the hydrogen detection bit is “0”, the gas determination unit 6b detects the sensor resistance R L-CO (constant at the third sensor resistance R L and the CO detection timing (t H ) when the carbon monoxide concentration is 300 ppm. ) and the temperature correction coefficient K L, determines the concentration of carbon monoxide is whether or 300 ppm, by determination formula shown in equation 7 below (step # 27). If hydrogen detection bit is "1", the third sensor resistance R L by the presence of hydrogen is subjected to interference, in addition to the correction by the temperature correction coefficient K L, also performs correction by the correction coefficient G. Therefore, the third sensor resistance R L , sensor resistance R L-CO (constant), temperature correction coefficient K L , correction coefficient G, and temperature correction coefficient are determined as to whether or not the carbon monoxide concentration is 300 ppm or higher when hydrogen is detected. based on K G, it determines the judgment formula shown in formula 8 below (step # 27). When the judgment formula shown in Formula 7 or Formula 8 is established, the CO judgment (the carbon monoxide concentration is 300 ppm or more) is made.

(数7)
/(RL−CO×K)<1
(Equation 7)
R L / (R L-CO × K L ) <1

(数8)
/(RL−CO×K×G×K)<1
(Equation 8)
R L / (R L-CO × K L × G × K G ) <1

ステップ#27においてCO判定の場合(YES)は、CO検知ビットを「1」にセットして、不完全燃焼判定信号を出力し、メタン検知処理(図4参照)に戻る(ステップ#28)。CO判定でない場合(NO)は、CO検知ビットを「0」にリセットして、メタン検知処理(図4参照)に戻る(ステップ#29)。ここで、CO検知ビットが「1」であった場合は、不完全燃焼警報が解除される。   In the case of CO determination in step # 27 (YES), the CO detection bit is set to “1”, an incomplete combustion determination signal is output, and the process returns to the methane detection process (see FIG. 4) (step # 28). If it is not the CO determination (NO), the CO detection bit is reset to “0” and the process returns to the methane detection process (see FIG. 4) (step # 29). Here, when the CO detection bit is “1”, the incomplete combustion alarm is canceled.

〈第2実施形態〉
次に、本発明装置1の別実施形態(第2実施形態)について、図面に基づいて説明する。
Second Embodiment
Next, another embodiment (second embodiment) of the device 1 of the present invention will be described with reference to the drawings.

第2実施形態に係る本発明装置1の回路構成は、第1実施形態の場合と全く同じである。第2実施形態に係る本発明装置1は、判定部6のガス判定部6bによる水素検知処理の処理アルゴリズムにおいて、第1実施形態と相違し、他の構成要素及び判定部6によるメタン検知処理及びCO検知処理の処理手順は第1実施形態と同じである。従って、第1実施形態と重複する説明は割愛し、第2実施形態における水素検知処理について説明する。   The circuit configuration of the inventive device 1 according to the second embodiment is exactly the same as that of the first embodiment. The device 1 of the present invention according to the second embodiment is different from the first embodiment in the processing algorithm of the hydrogen detection process by the gas determination unit 6b of the determination unit 6, and the methane detection process by the other components and the determination unit 6 and The processing procedure of the CO detection processing is the same as that in the first embodiment. Therefore, the description which overlaps with 1st Embodiment is omitted, and the hydrogen detection process in 2nd Embodiment is demonstrated.

第2実施形態では、水素以外のジメチルエーテル(DME)やエタノール等もメタン及び一酸化炭素の検知において雑ガスとなることから、水素以外の雑ガスの影響も排除して正確なメタン検知処理及びCO検知処理を行うために、DME及びエタノールの検知も水素検知処理で同時に実行する。   In the second embodiment, dimethyl ether (DME) other than hydrogen, ethanol, and the like also become miscellaneous gases in the detection of methane and carbon monoxide. In order to perform the detection process, detection of DME and ethanol is also performed simultaneously with the hydrogen detection process.

図8に、横軸に第1センサ抵抗をメタン濃度3000ppm時の高温状態でのセンサ抵抗RH−CH4(定数)で正規化した高温正規化抵抗(R/RH−CH4)を取り、縦軸に第2センサ抵抗Rと第1センサ抵抗Rの比較結果値(R/R)を取った2次元直交座標空間内に、センサ素子の周囲温度及び相対湿度が20℃、65%時における、190個の測定サンプルに対するメタン濃度が1000ppm、3000ppm、6000ppm、10000ppm時の座標点、水素濃度が500ppmと3000ppm時の座標点、DME濃度が1000ppm時の座標点、及び、エタノール濃度が1000ppm時の座標点を夫々プロットしたものを示す。 In FIG. 8, the horizontal axis represents the high-temperature normalized resistance (R H / R H-CH4 ) obtained by normalizing the first sensor resistance with the sensor resistance R H-CH 4 (constant) in a high temperature state when the methane concentration is 3000 ppm, In the two-dimensional orthogonal coordinate space in which the vertical axis represents the comparison result value (R M / R H ) between the second sensor resistance RM and the first sensor resistance RH , the ambient temperature and relative humidity of the sensor element are 20 ° C., Coordinate points when the methane concentration is 1000 ppm, 3000 ppm, 6000 ppm, and 10000 ppm, the coordinate points when the hydrogen concentrations are 500 ppm and 3000 ppm, the coordinate points when the DME concentration is 1000 ppm, and the ethanol concentration for 190 measurement samples at 65% Indicates a plot of coordinate points at 1000 ppm.

第1実施形態では、水素検知処理(図5参照)のステップ#13において、数4に示す判定式を用いることで、水素単独雰囲気または水素含有メタン雰囲気を検知できた。しかし、図8に示すように、第2センサ抵抗Rと第1センサ抵抗Rの比較結果値(R/R)は、メタン雰囲気と水素雰囲気でその分布範囲が有意に分離するが、DME及びエタノールについては、メタン雰囲気と分布範囲が重複するため、数4に示す判定式では、DME及びエタノールの存在をメタンと区別して検知できない。 In the first embodiment, in step # 13 of the hydrogen detection process (see FIG. 5), the hydrogen alone atmosphere or the hydrogen-containing methane atmosphere can be detected by using the determination formula shown in Equation 4. However, as shown in FIG. 8, the comparison result value (R M / R H ) between the second sensor resistance RM and the first sensor resistance RH is significantly separated in the distribution range between the methane atmosphere and the hydrogen atmosphere. For DME and ethanol, since the methane atmosphere and the distribution range overlap, the determination formula shown in Equation 4 cannot detect the presence of DME and ethanol separately from methane.

従って、第2実施形態では、水素検知処理(図5参照)のステップ#13で使用した数4に示す判定式を用いずに、高温正規化抵抗(R/RH−CH4)の増減方向と比較結果値(R/R)の増減方向規定される2次元直交座標空間内において、高温正規化抵抗(R/RH−CH4)と比較結果値(R/R)で定まる水素検知用座標点が当該2次元直交座標空間内の所定領域内に存在するか否かによって、水素、DME及びエタノールの雑ガスの検知を行う。以下、第2実施形態において、「水素検知」は「雑ガス検知」と同義である。 Therefore, in the second embodiment, the increase / decrease direction of the high-temperature normalization resistance (R H / R H-CH 4 ) without using the determination formula shown in Equation 4 used in Step # 13 of the hydrogen detection process (see FIG. 5). compared in result value two-dimensional orthogonal coordinate space is increased or decreased the direction defined in (R M / R H), at an elevated temperature normalized resistance (R H / R H-CH4 ) and the comparison result value (R M / R H) and Detection of miscellaneous gases such as hydrogen, DME, and ethanol is performed depending on whether or not the determined hydrogen detection coordinate points are present in a predetermined region in the two-dimensional orthogonal coordinate space. Hereinafter, in the second embodiment, “hydrogen detection” is synonymous with “miscellaneous gas detection”.

具体的には、図9に示すように、上記2次元直交座標空間内を数点の基準座標点(例えば、A,B,C,Dの4点)を通る折れ線(境界線)Lで2つの領域に区分して、折れ線Lの右側及び下側に水素、DME及びエタノールの座標点が収まるように、基準座標点の座標(R/RH−CH4,R/R)を規定する。尚、折れ線Lは、基準座標点Aから基準座標点Bと反対側には縦軸に平行に下側に延伸し、基準座標点Dから基準座標点Cと反対側には横軸に平行に右側に延伸するように規定される。従って、折れ線Lは2次元直交座標空間を雑ガス判定領域と雑ガス非判定領域に区分する境界線となる。基準座標点の座標値は、予め異なる周囲温度、例えば、−10℃、0℃、20℃、50℃で設定しておき、不揮発性記憶手段4に記憶する。水素検知用座標点が折れ線Lの右側及び下側に位置する場合は、水素等の雑ガスが存在すると判定(水素判定)され、水素検知ビットを「1」にセットして、水素検知信号を出力する。 Specifically, as shown in FIG. 9, 2 broken lines (boundary lines) L passing through several reference coordinate points (for example, four points A, B, C, and D) in the two-dimensional orthogonal coordinate space. The coordinates of the reference coordinate points (R H / R H -CH 4 , R M / R H ) are specified so that the coordinate points of hydrogen, DME, and ethanol fit on the right side and the lower side of the polygonal line L. To do. The broken line L extends from the reference coordinate point A to the opposite side to the reference coordinate point B in parallel to the vertical axis, and extends downward from the reference coordinate point D to the opposite side to the reference coordinate point C in parallel to the horizontal axis. It is defined to extend to the right. Therefore, the broken line L is a boundary line that divides the two-dimensional orthogonal coordinate space into a miscellaneous gas determination region and a miscellaneous gas non-determination region. The coordinate values of the reference coordinate points are set in advance at different ambient temperatures, for example, −10 ° C., 0 ° C., 20 ° C., and 50 ° C., and stored in the nonvolatile storage means 4. When the hydrogen detection coordinate points are located on the right side and the lower side of the polygonal line L, it is determined that there is a miscellaneous gas such as hydrogen (hydrogen determination), the hydrogen detection bit is set to “1”, and the hydrogen detection signal is Output.

以下、図10を参照して、第2実施形態における水素検知処理の処理手順を説明する。メタン検知処理(図4参照)のステップ#6においてメタン判定の場合(YES)、抵抗検出部6aは、センサ出力Vとメタン検知時の負荷抵抗RLHM(=R1)と電源電圧Vccより、上記の数3に示す算出式より、第2センサ抵抗Rを算出する(ステップ#31)。 Hereinafter, with reference to FIG. 10, the process sequence of the hydrogen detection process in 2nd Embodiment is demonstrated. If at step # 6 of methane detection processing (see FIG. 4) of methane determination (YES), the resistance detection unit 6a, the sensor output V M and methane detection time of the load resistor RL HM and (= R1) than the power supply voltage Vcc, The second sensor resistance RM is calculated from the calculation formula shown in Equation 3 (step # 31).

次に、ガス判定部6bは、周囲温度Tから、2次元直交座標空間内の折れ線Lを規定する基準座標点A〜Dの各座標値を算出する(ステップ#32)。具体的には、周囲温度が−10℃、0℃、20℃、50℃における基準座標点A〜Dの各座標値を基に補間処理を行い、周囲温度Tでの基準座標点A〜Dの各座標値(Xi,Yi)(i=A〜D)を算出する。例えば、周囲温度Tが30℃の場合は、周囲温度が20℃と50℃における基準座標点A〜Dの各座標値を基に補間処理を行う。ここで、X座標は横軸の高温正規化抵抗(R/RH−CH4)とし、Y座標は縦軸の比較結果値(R/R)とする。 Next, the gas determination unit 6b calculates the coordinate values of the reference coordinate points A to D that define the polygonal line L in the two-dimensional orthogonal coordinate space from the ambient temperature T (step # 32). Specifically, interpolation processing is performed based on the coordinate values of the reference coordinate points A to D when the ambient temperature is −10 ° C., 0 ° C., 20 ° C., and 50 ° C., and the reference coordinate points A to D at the ambient temperature T are detected. Each coordinate value (Xi, Yi) (i = A to D) is calculated. For example, when the ambient temperature T is 30 ° C., interpolation processing is performed based on the coordinate values of the reference coordinate points A to D at the ambient temperature of 20 ° C. and 50 ° C. Here, the X coordinate is the high-temperature normalized resistance (R H / R H —CH 4 ) on the horizontal axis, and the Y coordinate is the comparison result value (R M / R H ) on the vertical axis.

次に、ガス判定部6bは、ステップ#31で算出した第2センサ抵抗Rと、メタン検知処理(図4参照)のステップ#4で算出した第1センサ抵抗Rから、水素検知用座標点の座標値(X0,Y0)を求める(ステップ#33)。 Next, the gas determination unit 6b, a second sensor resistance R M calculated in step # 31, the methane detection processing from the first sensor resistance R H calculated in step # 4 (see FIG. 4), the hydrogen detecting coordinates The coordinate value (X0, Y0) of the point is obtained (step # 33).

次に、ガス判定部6bは、水素検知用座標点の座標値(X0,Y0)が、ステップ#32で算出した基準座標点A〜Dの各座標値(Xi,Yi)(i=A〜D)で規定される折れ線Lの雑ガス領域側(右側及び下側)に存在するか否かを判定する(ステップ#34)。具体的には、水素検知用座標点のX座標X0と、基準座標点A〜Dの各X座標との大小比較、及び、水素検知用座標点のY座標Y0と、基準座標点A〜Dの各Y座標との大小比較により、水素検知用座標点が基準座標点A〜Dに対して横軸方向及び縦軸方向のどの位置にあるかを判定する。   Next, the gas determination unit 6b determines that the coordinate values (X0, Y0) of the hydrogen detection coordinate points are the coordinate values (Xi, Yi) (i = A˜) of the reference coordinate points A to D calculated in step # 32. It is determined whether or not it exists on the miscellaneous gas region side (right side and lower side) of the broken line L defined in D) (step # 34). Specifically, the X coordinate X0 of the hydrogen detection coordinate point and the X coordinate of each of the reference coordinate points A to D are compared, and the Y coordinate Y0 of the hydrogen detection coordinate point and the reference coordinate points A to D are compared. The hydrogen detection coordinate point is located in the horizontal axis direction or the vertical axis direction with respect to the reference coordinate points A to D by comparison with the respective Y coordinates.

水素検知用座標点が基準座標点Aの左側(X0<XA)にあれば、水素判定されない。また、水素検知用座標点が基準座標点Aの上側(Y0>YD)にあれば、水素判定されない。それ以外の場合は、以下の要領で判定を行う。   If the hydrogen detection coordinate point is on the left side (X0 <XA) of the reference coordinate point A, the hydrogen determination is not performed. Further, if the hydrogen detection coordinate point is above the reference coordinate point A (Y0> YD), the hydrogen determination is not performed. In other cases, the determination is made as follows.

水素検知用座標点が基準座標点AとBの中間(XA≦X0<XB)にある場合は、水素検知用座標点のY座標Y0が、基準座標点AとBを結ぶ線分上のX座標がX0におけるY座標YAB(X0)より下側(Y0≦YAB(X0))にあれば、水素判定となる。水素検知用座標点が基準座標点BとCの中間(XB≦X0<XC)にある場合は、水素検知用座標点のY座標Y0が、基準座標点BとCを結ぶ線分上のX座標がX0におけるY座標YBC(X0)より下側(Y0≦YBC(X0))にあれば、水素判定となる。水素検知用座標点が基準座標点CとDの中間(XC≦X0<XD)にある場合は、水素検知用座標点のY座標Y0が、基準座標点CとDを結ぶ線分上のX座標がX0におけるY座標YCD(X0)より下側(Y0≦YCD(X0))にあれば、水素判定となる。水素検知用座標点が基準座標点Dより右側(XD≦X0)にある場合は、水素検知用座標点のY座標Y0が、基準座標点DのY座標YDより下側(Y0≦YD)にあれば、水素判定となる。 When the hydrogen detection coordinate point is in the middle of the reference coordinate points A and B (XA ≦ X0 <XB), the Y coordinate Y0 of the hydrogen detection coordinate point is X on the line segment connecting the reference coordinate points A and B. If the coordinates are below the Y coordinate Y AB (X0) in X0 (Y0 ≦ Y AB (X0)), the hydrogen determination is made. If the hydrogen detection coordinate point is in the middle of the reference coordinate points B and C (XB ≦ X0 <XC), the Y coordinate Y0 of the hydrogen detection coordinate point is X on the line segment connecting the reference coordinate points B and C. If the coordinate is below the Y coordinate Y BC (X0) in X0 (Y0 ≦ Y BC (X0)), the hydrogen determination is made. When the hydrogen detection coordinate point is in the middle of the reference coordinate points C and D (XC ≦ X0 <XD), the Y coordinate Y0 of the hydrogen detection coordinate point is X on the line segment connecting the reference coordinate points C and D. If the coordinate is below the Y coordinate Y CD (X0) in X0 (Y0 ≦ Y CD (X0)), the hydrogen determination is made. When the hydrogen detection coordinate point is on the right side (XD ≦ X0) of the reference coordinate point D, the Y coordinate Y0 of the hydrogen detection coordinate point is below the Y coordinate YD of the reference coordinate point D (Y0 ≦ YD). If there is, the hydrogen determination is made.

ステップ#34において水素判定でない場合(NO)は、メタン検知ビットを「1」にセットして、ガス漏れ判定信号を出力し(ステップ#35)、水素検知ビットを「0」にリセットして、CO検知処理(図6参照)に移行する(ステップ#36)。また、ステップ#34において水素判定の場合は、ステップ#37以降の各処理を行う。尚、ステップ#37以降の各処理は、第1実施形態における水素検知処理(図5参照)のステップ#16以降の処理と同じであるので、重複する説明は省略する。   If it is not hydrogen determination in step # 34 (NO), the methane detection bit is set to “1”, a gas leak determination signal is output (step # 35), the hydrogen detection bit is reset to “0”, The process proceeds to the CO detection process (see FIG. 6) (step # 36). In the case of hydrogen determination in step # 34, each process after step # 37 is performed. Since each process after step # 37 is the same as the process after step # 16 of the hydrogen detection process (see FIG. 5) in the first embodiment, a duplicate description is omitted.

次に、本発明装置の別実施形態について説明する。   Next, another embodiment of the device of the present invention will be described.

〈1〉上記第1実施形態の水素検知処理(図5参照)において、数4に示す判定式により、水素単独雰囲気または水素含有メタン雰囲気であるか否かを判定する(ステップ#13)場合を説明したが、閾値Sを2通り用意することにより、水素含有メタン雰囲気ではなく、水素単独雰囲気だけを選択的に判定することも可能である。従って、ステップ#13において水素判定となる場合に、更に、閾値Sより小さい第2の閾値S’を用いて水素単独雰囲気の検知を行い、水素単独雰囲気である場合には、ステップ#18でのメタン濃度が3000ppm以上か否かの判定において、水素検知時における補正係数Fと温度補正係数Kに代えて第2の補正係数F’とその温度補正係数KF’を使用するようにしても構わない。補正係数Fは1より小さい正数であるが、第2の補正係数F’は1以下で補正係数Fより大きい値とする。第2の補正係数F’及び温度補正係数Kが1の場合は、数5に示す判定式は、数2に示す判定式と同じになる。つまり、水素単独雰囲気の場合には、水素検知時における補正を行わないか、或いは、その補正の程度を弱くする。これにより、メタン検知感度が緩和されず、メタン判定となり易くなる。 <1> In the hydrogen detection process of the first embodiment (see FIG. 5), the determination formula (4) is used to determine whether the atmosphere is a hydrogen-only atmosphere or a hydrogen-containing methane atmosphere (step # 13). As described above, by preparing two threshold values S, it is possible to selectively determine not only the hydrogen-containing methane atmosphere but only the hydrogen-only atmosphere. Accordingly, when the hydrogen determination is made in step # 13, the hydrogen alone atmosphere is further detected using the second threshold value S ′ smaller than the threshold value S. In determining whether the methane concentration is 3000 ppm or more, the second correction coefficient F ′ and the temperature correction coefficient K F ′ may be used instead of the correction coefficient F and the temperature correction coefficient K F at the time of hydrogen detection. I do not care. The correction coefficient F is a positive number smaller than 1, but the second correction coefficient F ′ is 1 or less and larger than the correction coefficient F. When the second correction coefficient F ′ and the temperature correction coefficient K F are 1, the determination formula shown in Formula 5 is the same as the determination formula shown in Formula 2. That is, in the case of the hydrogen alone atmosphere, the correction at the time of hydrogen detection is not performed or the degree of the correction is weakened. Thereby, the methane detection sensitivity is not relaxed, and it becomes easy to make methane determination.

同様に、水素単独雰囲気である場合には、CO検知処理(図6参照)のステップ#27における一酸化炭素濃度が300ppm以上か否かの判定において、水素検知時における補正係数Gと温度補正係数Kに代えて第2の補正係数G’とその温度補正係数KG’を使用するようにしても構わない。 Similarly, when the atmosphere is hydrogen alone, the correction coefficient G and the temperature correction coefficient at the time of hydrogen detection are determined in step # 27 in the CO detection process (see FIG. 6) when the carbon monoxide concentration is 300 ppm or more. instead of K G 'and temperature correction coefficient K G' second correction factor G may be employed.

〈2〉上記各実施形態において、水素検知処理に使用する第2センサ抵抗Rと第1センサ抵抗Rを比較した比較結果値として、第2センサ抵抗Rを第1センサ抵抗Rで除した比較結果値を使用したが、当該比較結果値として、例えば、第2センサ抵抗Rと第1センサ抵抗Rの差をメタン濃度3000ppm時のメタン検出タイミング(t)におけるセンサ抵抗RH−CH4(定数)で除して正規化した値を使用しても構わない。上記各実施形態と同様に、水素検知時のメタンとの弁別性が向上し、より高精度に水素の存在判定を行うことができる。 <2> In the above embodiments, as the comparison result value obtained by comparing the second sensor resistor R M and the first sensor resistance R H for use in hydrogen detection process, a second sensor resistance R M in the first sensor resistance R H As the comparison result value, for example, the difference between the second sensor resistance RM and the first sensor resistance RH is the sensor resistance R at the methane detection timing (t H ) when the methane concentration is 3000 ppm. A value normalized by dividing by H-CH4 (constant) may be used. As in the above embodiments, the discrimination from methane at the time of hydrogen detection is improved, and the presence determination of hydrogen can be performed with higher accuracy.

〈3〉上記各実施形態において、第1センサ抵抗R、第2センサ抵抗R、第3センサ抵抗Rとして、夫々、数1、数3及び数6に示す算出式によりセンサ素子の電気抵抗値として算出したが、各センサ抵抗は、必ずしも電気抵抗値として算出されなくても構わない。各センサ抵抗は、例えば、夫々の電気抵抗値と比例関係にあって、当該電気抵抗値に一義的に換算可能な値であっても構わない。例えば、夫々の電気抵抗値を清浄空気雰囲気中での電気抵抗値(定数)で正規化したもの(電気抵抗相当値)であっても構わない。 <3> In each of the embodiments described above, the first sensor resistance R H , the second sensor resistance R M , and the third sensor resistance R L are calculated by the calculation formulas shown in Formulas 1, 3 and 6, respectively. Although calculated as a resistance value, each sensor resistance does not necessarily have to be calculated as an electrical resistance value. Each sensor resistance may be, for example, a value proportional to each electric resistance value and uniquely convertible to the electric resistance value. For example, each electric resistance value may be normalized by an electric resistance value (constant) in a clean air atmosphere (electric resistance equivalent value).

〈4〉上記各実施形態におけるメタン検知処理、水素検知処理、及び、CO検知処理は、上記各実施形態に例示した処理手順に限定されるものではない。本発明の趣旨に沿って適宜変更可能である。例えば、上記第1実施形態では、メタン検知処理後に、水素検知処理を行ったが、水素検知処理の水素の存在を判定するまでの処理をメタン検知処理の前に行っても構わない。   <4> The methane detection process, the hydrogen detection process, and the CO detection process in each of the above embodiments are not limited to the processing procedures exemplified in the above embodiments. It can change suitably according to the meaning of the present invention. For example, in the first embodiment, the hydrogen detection process is performed after the methane detection process, but the process up to determining the presence of hydrogen in the hydrogen detection process may be performed before the methane detection process.

〈5〉上記各実施形態では、メタンと一酸化炭素の2種類の検知対象ガスを1つのセンサ素子を用いて検知する場合を説明したが、検知対象ガスはメタンだけあっても構わない。   <5> In each of the above embodiments, a case has been described in which two types of detection target gases, methane and carbon monoxide, are detected using one sensor element, but the detection target gas may be only methane.

〈6〉上記各実施形態では、センサ素子11のヒータ10の温度制御の一例として、ヒータ10に一定電圧をPWM制御により印加する場合を説明したが、ヒータ10に直接、5秒間の高温駆動時に0.9V、10秒間の低温駆動時に0.2Vの電圧を印加するようにしても構わない。   <6> In each of the above embodiments, the case where a constant voltage is applied to the heater 10 by PWM control is described as an example of the temperature control of the heater 10 of the sensor element 11. You may make it apply the voltage of 0.2V at the time of low temperature drive of 0.9V and 10 seconds.

〈7〉上記各実施形態において例示した各電圧値やタイミング、或いは、ガス濃度等は、一例であり上記各実施形態において例示した値に限定されるものではなく、適宜変更可能である。   <7> Each voltage value, timing, gas concentration, and the like exemplified in the above embodiments are examples, and are not limited to the values exemplified in the above embodiments, and can be changed as appropriate.

本発明に係るガス検知装置は、ガス漏れや不完全燃焼を検知するガス警報器等のガス検知装置に利用可能である。   The gas detection device according to the present invention can be used for a gas detection device such as a gas alarm that detects gas leakage or incomplete combustion.

本発明に係るガス検知装置の回路構成例を示す回路ブロック図The circuit block diagram which shows the circuit structural example of the gas detection apparatus which concerns on this invention 本発明に係るガス検知装置におけるメタンと一酸化炭素の2種類の検出対象ガスに対する検出能を有するセンサ部の回路構成例を示す回路図The circuit diagram which shows the circuit structural example of the sensor part which has the detection ability with respect to two types of detection object gas of methane and carbon monoxide in the gas detection apparatus which concerns on this invention 図2に示すセンサ部のヒータを加熱制御する場合の印加電圧波形、実効的な印加電圧、温度変化、及び、センサ出力の検出タイミングを示すタイミング波形図Timing waveform diagram showing applied voltage waveform, effective applied voltage, temperature change, and sensor output detection timing when controlling the heater of the sensor unit shown in FIG. 本発明に係るガス検知装置によるメタン検知処理の処理手順の一例を示すフローチャートThe flowchart which shows an example of the process sequence of the methane detection process by the gas detection apparatus which concerns on this invention 本発明に係るガス検知装置による水素検知処理の処理手順の一例を示すフローチャートThe flowchart which shows an example of the process sequence of the hydrogen detection process by the gas detection apparatus which concerns on this invention 本発明に係るガス検知装置によるCO検知処理の処理手順の一例を示すフローチャートThe flowchart which shows an example of the process sequence of CO detection processing by the gas detection apparatus which concerns on this invention 横軸を高温正規化抵抗(R/RH−CH4)とし、縦軸を比較結果値(R/R)とする2次元直交座標空間内に、各種メタン濃度のメタン雰囲気と各種メタン濃度と水素濃度1000ppmの水素含有メタン雰囲気の座標点をプロットした分布図Methane atmospheres and various methanes with various methane concentrations in a two-dimensional orthogonal coordinate space with the horizontal axis representing the high-temperature normalized resistance (R H / R H-CH 4 ) and the vertical axis representing the comparison result value (R M / R H ) Distribution chart plotting coordinate points of methane atmosphere with hydrogen concentration and hydrogen concentration of 1000ppm 横軸を高温正規化抵抗(R/RH−CH4)とし、縦軸を比較結果値(R/R)とする2次元直交座標空間内に、メタン濃度が1000ppm、3000ppm、6000ppm、10000ppm時の座標点、水素濃度が500ppmと3000ppm時の座標点、DME濃度が1000ppm時の座標点、及び、エタノール濃度が1000ppm時の座標点を夫々プロットした分布図The methane concentration is 1000 ppm, 3000 ppm, 6000 ppm in a two-dimensional orthogonal coordinate space where the horizontal axis is the high temperature normalized resistance (R H / R H —CH 4 ) and the vertical axis is the comparison result value (R M / R H ). Distribution chart plotting coordinate points at 10,000 ppm, coordinate points at 500 ppm and 3000 ppm for hydrogen concentration, coordinate points at 1000 ppm DME concentration, and coordinate points at 1000 ppm ethanol concentration 図8に示す分布図上に雑ガス判定用の折れ線(境界線)とそれを規定する基準座標点を示す図The figure which shows the broken line (boundary line) for miscellaneous gas determination on the distribution map shown in FIG. 8, and the reference | standard coordinate point which prescribes | regulates it 本発明に係るガス検知装置による水素検知処理の処理手順の他の一例を示すフローチャートThe flowchart which shows another example of the process sequence of the hydrogen detection process by the gas detection apparatus which concerns on this invention. 金属酸化物半導体を主成分とするセンサ素子の一構成例を示す図The figure which shows one structural example of the sensor element which has a metal oxide semiconductor as a main component 図11に示すセンサ素子に印加する加熱電圧波形と温度変化を示すタイミング波形図Timing waveform diagram showing heating voltage waveform and temperature change applied to sensor element shown in FIG. 図11に示すセンサ素子のメタンと一酸化炭素と水素に対する感度特性を模式的に示す感度特性図FIG. 11 is a sensitivity characteristic diagram schematically showing sensitivity characteristics of the sensor element shown in FIG. 11 with respect to methane, carbon monoxide and hydrogen. 横軸を高温正規化抵抗(R/RH−CH4)とし、縦軸を中間正規化抵抗(R/RH−CH4)とする2次元直交座標空間内に、センサ素子の周囲温度及び相対湿度が20℃、65%時おける、メタン濃度が1000ppm、3000ppm、6000ppm、10000ppm時の座標点、及び、水素濃度が500ppmと3000ppm時の座標点を夫々プロットした分布図The ambient temperature of the sensor element and the ambient temperature of the sensor element in a two-dimensional orthogonal coordinate space with the horizontal axis as the high temperature normalized resistance (R H / R H —CH 4 ) and the vertical axis as the intermediate normalized resistance (R M / R H —CH 4 ) Distribution diagram plotting coordinate points when methane concentration is 1000ppm, 3000ppm, 6000ppm, 10000ppm, and when hydrogen concentration is 500ppm and 3000ppm at relative humidity of 20 ° C and 65%, respectively. 横軸を高温正規化抵抗(R/RH−CH4)とし、縦軸を比較結果値(R/R)とする2次元直交座標空間内に、センサ素子の周囲温度及び相対湿度が20℃、65%時おける、メタン濃度が1000ppm、3000ppm、6000ppm、10000ppm時の座標点、及び、水素濃度が500ppmと3000ppm時の座標点を夫々プロットした分布図The ambient temperature and relative humidity of the sensor element are within a two-dimensional orthogonal coordinate space with the horizontal axis representing the high-temperature normalized resistance (R H / R H-CH 4 ) and the vertical axis representing the comparison result value (R M / R H ). Distribution chart plotting coordinate points at methane concentration of 1000 ppm, 3000 ppm, 6000 ppm, and 10000 ppm at 20 ° C. and 65%, and coordinate points at hydrogen concentrations of 500 ppm and 3000 ppm, respectively.

符号の説明Explanation of symbols

1: 本発明に係るガス検知装置
2: マイクロプロセッサ
3: センサ部
4: 不揮発性記憶手段
5: 加熱制御部
5a: センサ駆動部
5b: パルス制御部
6: 判定部
6a: 抵抗検出部
6b: ガス判定部
7: 警報出力部
8: 電源部
9: 温度センサ
10: ヒータ(加熱コイル)
11: センサ素子
12: センサ出力端子
13: 電源プラグ
14: 光警報出力部(光報知信号出力部)
14a: LED
15: 音声警報出力部
15a: 音声回路
15b: スピーカ
16: 外部出力回路
17: 警報出力制御部
18: 光報知信号制御部
21: センサ素子
22: 加熱コイル
23: 電極
24: 金属酸化物半導体
25: 負荷抵抗
R1,R2: 負荷抵抗
T: スイッチングトランジスタ
Vcc: 電源電圧
1: Gas detection device according to the present invention 2: Microprocessor 3: Sensor unit 4: Non-volatile storage means 5: Heating control unit 5a: Sensor driving unit 5b: Pulse control unit 6: Determination unit 6a: Resistance detection unit 6b: Gas Judgment part 7: Alarm output part 8: Power supply part 9: Temperature sensor 10: Heater (heating coil)
11: Sensor element 12: Sensor output terminal 13: Power plug 14: Light alarm output unit (light notification signal output unit)
14a: LED
15: Audio alarm output unit 15a: Audio circuit 15b: Speaker 16: External output circuit 17: Alarm output control unit 18: Light notification signal control unit 21: Sensor element 22: Heating coil 23: Electrode 24: Metal oxide semiconductor 25: Load resistance R1, R2: Load resistance T: Switching transistor Vcc: Power supply voltage

Claims (7)

金属酸化物半導体を主成分とする少なくともメタンと水素に感応して電気抵抗が変化するセンサ素子と、
前記センサ素子の温度が高温状態と低温状態間を周期的に遷移するように加熱制御を行う加熱制御部と、
前記センサ素子の電気抵抗値または当該電気抵抗値に換算可能な電気抵抗相当値で表されるセンサ抵抗を検出する抵抗検出部と、
前記抵抗検出部の検出した前記センサ抵抗に基づいて、メタンと水素の存在を各別に判定するガス判定部と、を備えてなるガス検知装置であって、
前記抵抗検出部は、前記加熱制御部による加熱制御により前記センサ素子が前記高温状態にあるときの前記センサ抵抗を第1センサ抵抗として検出し、前記加熱制御部による加熱制御により前記センサ素子が前記高温状態と前記低温状態の間を遷移している中間状態にあるときの前記センサ抵抗を第2センサ抵抗として検出し、
前記ガス判定部は、前記第1センサ抵抗に基づいてメタンの存在判定を行い、前記第2センサ抵抗と前記第1センサ抵抗を比較した比較結果値に基づいて水素の存在判定を行うことを特徴とするガス検知装置。
A sensor element whose electrical resistance changes in response to at least methane and hydrogen, the main component of which is a metal oxide semiconductor;
A heating control unit that performs heating control so that the temperature of the sensor element periodically transitions between a high temperature state and a low temperature state;
A resistance detector that detects a sensor resistance represented by an electrical resistance value of the sensor element or an electrical resistance equivalent value that can be converted into the electrical resistance value;
A gas determination device comprising: a gas determination unit that determines presence of methane and hydrogen separately based on the sensor resistance detected by the resistance detection unit;
The resistance detection unit detects the sensor resistance when the sensor element is in the high temperature state by heating control by the heating control unit as a first sensor resistance, and the sensor element is detected by heating control by the heating control unit. Detecting the sensor resistance when in an intermediate state transitioning between a high temperature state and the low temperature state as a second sensor resistance;
The gas determination unit determines the presence of methane based on the first sensor resistance, and determines the presence of hydrogen based on a comparison result value obtained by comparing the second sensor resistance and the first sensor resistance. Gas detection device.
前記ガス判定部は、前記比較結果値に基づいて前記第1センサ抵抗または前記第1センサ抵抗に対する閾値判定に使用する閾値の補正を行い、前記メタンの存在判定を行うことを特徴とする請求項1に記載のガス検知装置。   The said gas determination part correct | amends the threshold value used for the threshold determination with respect to the said 1st sensor resistance or the said 1st sensor resistance based on the said comparison result value, The said methane presence determination is performed. The gas detection device according to 1. 前記ガス判定部は、前記比較結果値に基づいて水素がメタンと共存せずに単独で存在するか否かを判定し、当該判定結果に基づいて前記第1センサ抵抗または前記第1センサ抵抗に対する閾値判定に使用する閾値の補正を行い、前記メタンの存在判定を行うことを特徴とする請求項1または2に記載のガス検知装置。   The gas determination unit determines whether hydrogen exists alone without coexisting with methane based on the comparison result value, and the first sensor resistance or the first sensor resistance is determined based on the determination result. The gas detection device according to claim 1 or 2, wherein the presence of the methane is determined by correcting a threshold used for threshold determination. 前記センサ素子の周囲温度を測定する温度センサを備え、
前記ガス判定部は、前記第1センサ抵抗または前記第1センサ抵抗に対する前記閾値判定に使用する閾値を、前記温度センサで測定した前記周囲温度に基づいて補正することを特徴とする請求項2または3に記載のガス検知装置。
A temperature sensor for measuring the ambient temperature of the sensor element;
The said gas determination part correct | amends the threshold value used for the said threshold value determination with respect to the said 1st sensor resistance or the said 1st sensor resistance based on the said ambient temperature measured with the said temperature sensor, or 3. The gas detection device according to 3.
前記センサ素子の前記金属酸化物半導体は、更に、一酸化炭素に感応して電気抵抗が変化し、
前記抵抗検出部は、前記加熱制御部による加熱制御により前記センサ素子が前記低温状態にあるときの前記センサ抵抗を第3センサ抵抗として検出し、
前記ガス判定部は、前記第3センサ抵抗に基づいて一酸化炭素の存在判定を行う場合に、前記比較結果値に基づいて前記第3センサ抵抗または前記第3センサ抵抗に対する閾値判定に使用する閾値の補正を行うことを特徴とする請求項1〜4の何れか1項に記載のガス検知装置。
The metal oxide semiconductor of the sensor element further changes its electrical resistance in response to carbon monoxide,
The resistance detection unit detects the sensor resistance when the sensor element is in the low temperature state by the heating control by the heating control unit as a third sensor resistance,
The gas determination unit is configured to determine the third sensor resistance or a threshold value for the third sensor resistance based on the comparison result value when determining the presence of carbon monoxide based on the third sensor resistance. The gas detection device according to any one of claims 1 to 4, wherein the correction is performed.
前記センサ素子の周囲温度を測定する温度センサを備え、
前記ガス判定部は、前記第3センサ抵抗または前記第3センサ抵抗に対する前記閾値判定に使用する閾値を、前記温度センサで測定した前記周囲温度に基づいて補正することを特徴とする請求項5に記載のガス検知装置。
A temperature sensor for measuring the ambient temperature of the sensor element;
The said gas determination part correct | amends the threshold value used for the said threshold value determination with respect to the said 3rd sensor resistance or the said 3rd sensor resistance based on the said ambient temperature measured with the said temperature sensor. The gas detector described.
前記ガス判定部は、前記第1センサ抵抗の増減方向と前記比較結果値の増減方向で規定される2次元直交座標空間内において、前記第1センサ抵抗と前記比較結果値で定まる座標点が当該2次元直交座標空間内の所定領域内に存在する場合に、水素の存在を判定することを特徴とする請求項1〜6の何れか1項に記載のガス検知装置。   In the two-dimensional orthogonal coordinate space defined by the increase / decrease direction of the first sensor resistance and the increase / decrease direction of the comparison result value, the gas determination unit is configured to determine a coordinate point determined by the first sensor resistance and the comparison result value. The gas detection device according to any one of claims 1 to 6, wherein the presence of hydrogen is determined when it exists in a predetermined region in a two-dimensional orthogonal coordinate space.
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