JP2007258197A - Tape carrier for semiconductor device and manufacturing method thereof - Google Patents

Abstract

The present invention provides a tape carrier for a semiconductor device excellent in heat dissipation without impairing the original characteristics such as flexibility of the tape carrier, and a method for manufacturing the same.
A wiring layer 3 made of an electrolytic copper foil having a thickness of 25 μm is formed on a surface of a polyimide tape 1 having a thickness of 50 μm and a width of 35 mm with a wiring adhesive 2 interposed therebetween. The copper foil 4b is formed on the copper foil 4a through the copper foil adhesive 4a to form the protective layer 4.
[Selection] Figure 1

Description

  The present invention relates to a tape carrier for a semiconductor device excellent in heat dissipation without impairing the original properties such as flexibility of the tape carrier and a method for manufacturing the same.

  Semiconductor device tape carriers are indispensable as substrates on which semiconductor chips such as LCD driver ICs and printer ink control ICs are mounted.

  2A and 2B show the structure of a conventional tape carrier for a semiconductor device, where FIG. 2A is a plan view and FIG. 2B is a sectional view of a predetermined surface in the longitudinal direction of FIG.

In this tape carrier 20 for a semiconductor device, a wiring layer 3 made of copper is formed on the surface of an insulating resin polyimide tape 1 with a wiring adhesive 2 interposed therebetween. It has an inner lead portion 3a that enables mounting, an outer lead 3b that enables connection to an external electrode, and a wiring portion 3c. The wiring part 3c is covered with a solder resist 8 as a protective layer. In many cases, the solder resist 8 is formed by printing and applying an epoxy resin liquid solder resist material, followed by heat curing. Further, the copper surfaces of the inner lead portion 3a and the outer lead portion 3b are plated with Sn or Au (for example, see Patent Document 1).
JP 2000-332064 A

  However, in the configuration of the tape carrier 20 for a semiconductor device described above, the amount of heat generated from the chip and power supply wiring when the semiconductor device is driven increases as the density and integration of the semiconductor chip increase. There was a problem that the semiconductor device became high temperature due to heat generation, which hindered its original function.

  Accordingly, an object of the present invention is to provide a tape carrier for a semiconductor device excellent in heat dissipation and a manufacturing method thereof without impairing the original properties such as flexibility of the tape carrier.

  In order to achieve the above object, the tape carrier for a semiconductor device of the present invention forms a conductor wiring layer on at least one surface of an insulating resin film, and forms a semiconductor chip mounting portion at a predetermined position of the conductor wiring layer. In addition, in the tape carrier for a semiconductor device in which a predetermined portion of the conductor wiring layer is covered with a protective layer, a part of the protective layer is formed of metal.

  The protective layer may be a metal layer and an insulating adhesive, and the metal layer may be attached to the conductor wiring layer via an insulating adhesive.

  The thickness of the metal layer is preferably 30 μm or less.

  The said semiconductor chip mounting part shall have a device hole, and can be formed in the predetermined location of the said insulating resin film.

  The semiconductor chip mounting portion does not have a device hole, and can be formed at a predetermined location of the insulating resin film.

  The conductor wiring layer may be formed on both surfaces of the insulating resin film, and the protective layer may be covered on each conductor wiring layer.

  In order to achieve the above object, a method of manufacturing a tape carrier for a semiconductor device according to the present invention includes a step of forming a conductor wiring layer on at least one surface of an insulating resin film in which a semiconductor chip mounting portion is previously formed, and the insulation On the conductive resin film, the metal layer coated with the insulating adhesive is punched with a punching press with the insulating adhesive as the bottom surface, thereby continuing a punching operation to a predetermined portion of the conductor wiring layer. Adhering the metal layer by operation.

  Furthermore, it is preferable to include a step of curing the insulating adhesive by performing a heat treatment at a predetermined temperature and bonding the metal layer on the conductor wiring layer.

  ADVANTAGE OF THE INVENTION According to this invention, it becomes possible to provide the tape carrier for semiconductor devices excellent in heat dissipation, without impairing original characteristics, such as flexibility which a tape carrier has.

(Configuration of tape carrier)
1A and 1B show an embodiment of a tape carrier for a semiconductor device according to the present invention. FIG. 1A is a plan view and FIG. 1B is a cross-sectional view of a predetermined surface in the longitudinal direction of FIG.

  In this tape carrier 10 for a semiconductor device, a wiring layer 3 made of an electrolytic copper foil having a thickness of 25 μm is formed on the surface of a polyimide tape 1 having a thickness of 50 μm and a width of 35 mm via a wiring adhesive 2. The wiring layer 3 includes an inner lead portion 3a that enables mounting of the semiconductor chip 7, an outer lead 3b that enables connection to an external electrode, and a wiring portion 3c. A device hole 5 and a feed hole 6 for mounting the semiconductor chip 7 are provided at predetermined locations on the polyimide tape 1.

  Further, as a characteristic part of the tape carrier 10 for a semiconductor device, a protective layer 4 is formed on the wiring part 3c. As shown in FIG. 1B, the protective layer 4 has a structure in which a copper foil 4b is formed on the wiring layer 3 via a copper foil adhesive 4a. The thickness of the copper foil 4b is preferably 30 μm or less so as not to impair the flexibility of the semiconductor device tape carrier 10. As the copper foil adhesive 4a, for example, a thermosetting epoxy resin can be used, and in order to sufficiently cover the wiring layer 3, it is preferably formed thicker than the wiring layer 3.

  Further, the inner lead 3a and the outer lead 3b exposed from the protective layer 4 are formed with Ni plating having a thickness of 0.5 μm as a base for facilitating connection with the semiconductor chip 7 and external electrodes (not shown), respectively. A 0.5 μm thick Au plating is applied.

(Production method)
In order to manufacture the tape carrier 10 for a semiconductor device, first, a device hole 5 and a feed hole 6 for mounting the semiconductor chip 7 are previously formed in a predetermined portion of the polyimide tape 1 having a thickness of 50 μm and a width of 35 mm. An electrolytic copper foil having a thickness of 25 μm is bonded to the surface of the polyimide tape 1 via a wiring adhesive 2.

  Next, the electrolytic copper foil is etched to form the wiring layer 3 having a predetermined pattern having the inner lead portion 3a, the outer lead portion 3b, and the wiring portion 3c.

  Further, a protective layer 4 in which a 40 μm thick thermosetting epoxy resin adhesive 4a is applied to one side of a 9 μm thick copper foil 4b is punched into a predetermined shape by a punching press with the adhesive 4a as the bottom surface. Then, it adheres to the portion of the wiring layer 3c other than the inner lead portion 3a and the outer lead portion 3b by a continuous operation.

  Finally, the protective layer 4 is heated at 180 ° C. to cure the adhesive 4 a, thereby bonding the wiring layer 3 so as to cover it.

(Effect of this embodiment)
According to the tape carrier 10 for a semiconductor device of the present embodiment, the surface of the protective layer 4 formed on the surface of the wiring portion 3c is composed of the copper foil 4b. Compared with the protective layer that is configured, the heat dissipation of the heat generated from the semiconductor chip 7 and the conductor wiring is improved, and a highly reliable semiconductor device can be provided.

  That is, it is generally preferred that the semiconductor chip has a temperature of 100 ° C. or lower when driven. Here, when an LCD driver IC is mounted on a tape carrier 20 for a semiconductor device using a solder resist 8 of a thermosetting epoxy resin as a protective layer as shown in FIG. The temperature will be 120 ° C. On the other hand, when the LCD driver IC is mounted on a tape carrier having the copper foil 4b on the surface of the protective layer 4 as in the semiconductor device tape carrier 10 of the present embodiment, the semiconductor chip itself arrives. It became possible to make the maximum temperature 100 ° C.

  Moreover, in the tape carrier 10 for semiconductor devices of this embodiment, since the thickness of the copper foil 4b is 30 micrometers or less, the flexibility which a tape carrier has is not impaired.

  Further, according to the manufacturing method of the present embodiment, the protective layer 4 is formed by punching a film-like raw material with a press. . For this reason, the manufacturing process can be simplified.

[Other Embodiments]
In the said embodiment, although the surface of the protective layer 4 was comprised with the copper foil 4b, you may use metal foil with favorable heat conductivity, such as Al, besides.

  Moreover, although the example which formed the wiring layer 3 only in the single side | surface of the polyimide tape 1 which is an insulating resin film was shown in the said embodiment, the wiring layer 3 can also be formed in both surfaces of the polyimide tape 1. FIG. In this case, it is preferable to form the protective layer 4 on the wiring layers 3 on both sides.

  Moreover, although the example which formed the device hole 5 as a semiconductor chip mounting part was shown in the said embodiment, the device hole 5 can also be abbreviate | omitted according to the structure of the semiconductor device applied.

BRIEF DESCRIPTION OF THE DRAWINGS One Embodiment of the tape carrier for semiconductor devices of this invention is shown, (a) is a top view, (b) is sectional drawing of the longitudinal direction predetermined surface of (a). The structure of the conventional tape carrier for semiconductor devices is shown, (a) is a top view, (b) is sectional drawing of the longitudinal direction predetermined surface of (a).

Explanation of symbols

1 Polyimide tape (insulating resin film)
2 Wiring adhesive 3 Wiring layer 3a Inner lead 3b Outer lead 3c Wiring 4 Protective layer 4a Copper foil adhesive (insulating adhesive)
4b Copper foil (metal layer)
5 Device hole (semiconductor chip mounting part)
6 Feed hole 7 Semiconductor chip 8 Solder resist

Claims (8)

A semiconductor in which a conductor wiring layer is formed on at least one surface of an insulating resin film, a semiconductor chip mounting portion is formed at a predetermined portion of the conductor wiring layer, and a protective layer is coated on a predetermined portion of the conductor wiring layer In the tape carrier for equipment,
A tape carrier for a semiconductor device, wherein a part of the protective layer is made of metal.   2. The semiconductor device according to claim 1, wherein the protective layer includes a metal layer and an insulating adhesive, and the metal layer is attached to the conductor wiring layer via an insulating adhesive. Tape carrier.   The tape carrier for a semiconductor device according to claim 2, wherein the metal layer has a thickness of 30 μm or less.   2. The tape carrier for a semiconductor device according to claim 1, wherein the semiconductor chip mounting portion has a device hole and is formed at a predetermined location of the insulating resin film.   2. The tape carrier for a semiconductor device according to claim 1, wherein the semiconductor chip mounting portion is formed at a predetermined location of the insulating resin film without having a device hole.   2. The tape carrier for a semiconductor device according to claim 1, wherein the conductor wiring layer is formed on both surfaces of the insulating resin film, and the protective layer is coated on each conductor wiring layer. Forming a conductive wiring layer on at least one surface of the insulating resin film in which the semiconductor chip mounting portion is formed in advance;
On the insulating resin film, a punching operation is performed on a predetermined portion of the conductor wiring layer by punching a metal layer coated with an insulating adhesive with a punching press with the insulating adhesive as a lower surface. Bonding the metal layer in a continuous motion;
A method for producing a tape carrier for a semiconductor device.   8. The tape for a semiconductor device according to claim 7, further comprising a step of curing the insulating adhesive by performing a heat treatment at a predetermined temperature and bonding the metal layer onto the conductor wiring layer. Carrier manufacturing method.

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