JP2007119824A - Target assembly for rotary cylinder type magnetron sputtering cathode, sputtering cathode assembly, and sputtering system and thin film producing process using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a target assembly for a rotary cylinder type magnetron sputtering cathode which can be inexpensively and efficiently produced, and a sputtering cathode assembly and a rotary cylinder type magnetron sputtering system using the same. <P>SOLUTION: The target assembly A for the rotary cylinder type magnetron sputtering cathode is configured by respectively joining bulk-form rectangular target material pieces 2 to each outer side face 1a of 6 or more polygonal cylindrical support 1 and working the outer peripheral surfaces of the target material pieces 2 to a cylindrical form. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a rotating cylindrical magnetron sputtering cathode used for manufacturing an optical multilayer film and the like, and a sputtering apparatus and a film forming method using the cathode.

  Today, optical multilayer films are widely used not only as optical equipment but also as parts for optical communication devices, optical engines for displays, analysis equipment for medical dormitories, and so on. While required performances such as properties, high durability film quality, and cleanliness that does not include sub-micron level particles are increasing day by day, further cost reduction is required. For this reason, improvements of this type of film forming apparatus, related parts, and film forming techniques are constantly being made.

Conventionally, there are various methods for laminating an optical multilayer film or the like on a substrate, but recently, the sputtering method is gradually becoming common instead of the vacuum evaporation method. The shape of the target assembly used for the sputtering method is almost flat (see FIG. 10) or rectangular (see FIG. 11), and as a cathode assembly including a target, a magnetic circuit, a cooling water channel or an electric line, etc. The planar magnetron type is well known.
Satoshi Kanehara, “Sputtering Phenomenon: Fundamentals and Application to Thin Film / Coating Technology”, University of Tokyo Press, March 5, 1985 (2nd printing), p.161-163

As shown in FIG. 10 or FIG. 11, the target assembly in the planar magnetron type sputtering apparatus is made of a target material T such as a bulk metal or semiconductor, which is a metal support called a backing plate having good heat and electrical conductivity. It is made by joining mainly with indium metal to S, but when the target material itself has high rigidity, the self-supporting type that serves as the backing plate as it is without using the backing plate. It can also be used.
On the back side of the backing plate, a magnetron magnetic circuit formed by lining a magnetic closed circuit formed of a large number of permanent magnet pieces M with a yoke Y is arranged to maintain a high-density plasma for forming the erosion region E. It is a means.
Moreover, it is common to perform water cooling so that the target material does not reach a high temperature or the magnet is heated to prevent demagnetization.

Since the magnetron magnetic circuit is generally fixed with respect to the target, the erosion region created by the plasma enhanced by the magnetic circuit describes a closed loop pattern, so-called racetrack shape, fixed on the target. The erosion region is a clean material surface because it is constantly bombarded by ionized sputtering gas (a gas that acts as ions to bombard the target and play the role of sputtered particles, and in most cases Ar is used). However, the surface of the material in other regions is generally affected by recoil sputtered particles (particles once sputtered material particles are bounced back and deposited on the target surface again) and the reaction gas introduced. As a portion of the material undergoes a chemical reaction, the product compound is deposited on the target surface.
Since this region is not only clean but also has a surface with poor electrical conductivity, the deposition of ions causes abnormal discharge such as arcing, which adversely affects the system and film quality. In order to eliminate this adverse effect, a method of eliminating the non-erosion region by constantly swinging the magnetic circuit arranged on the back surface of the target has been proposed.

Alternatively, there is a method of forming a target assembly in a cylindrical shape, incorporating a magnetic circuit therein, and rotating the cylindrical target assembly with respect to the magnetic circuit to eliminate a non-erosion region. In this case, materials such as metals have no problem in processing due to their properties, but brittle materials such as Si are difficult to process directly into a cylindrical shape, and even if made, they are damaged by external forces such as thermal strain. There are many cases to do.
Therefore, at present, a method of depositing a material on a surface of a cylindrical support such as stainless steel by a method called a spraying method is used. This method is not only technically special but also thick, and it is difficult to dope boron, which is often used to provide electrical conductivity, even for heavily used Si. There is also.

The present invention has been made in view of the above-described conventional problems, and the object of the present invention is for a rotating cylindrical magnetron sputtering cathode that can be manufactured inexpensively and efficiently without using a thermal spraying method. It is to provide a target assembly.
It is another object of the present invention to provide a rotating cylindrical magnetron sputtering cathode assembly, a rotating cylindrical magnetron sputtering apparatus, and a thin film forming method using the target assembly according to the present invention.

  In order to achieve the above object, a target assembly for a rotating cylindrical magnetron sputtering cathode according to the present invention has a bulk strip target material piece attached to each outer surface of a multi-sided cylindrical support, respectively. It is configured by processing the outer peripheral surface into a cylindrical shape.

  In the target assembly according to the present invention, a plurality of pieces of the target material are joined to each outer surface directly or via a backing plate.

In the target assembly according to the present invention, the target material piece is preferably Si doped with aluminum in a range of 1 wt% to 5 wt%, Si doped with boron, preferably in a range of 1 ppma to 1000 ppma, and phosphorus. Is one of Si, ITO, Ta, Nb, Ti, TiO _{1.0 to} TiO _1.8 , Zr and Al doped in the range of 1 ppm to 500 ppm.

  In the target assembly according to the present invention, the target material piece has a shape in which both end portions are thicker than the center portion.

  Further, the rotating cylindrical magnetron sputtering cathode assembly according to the present invention has a plasma inside the multi-sided cylindrical support of any one of the target assemblies in order to form a racetrack-like erosion region on the side of the target. A magnetron magnetic circuit for reinforcing the target material, an electric line for energizing the target material, and a cooling water channel for cooling the target material are enclosed so as to be usable in a vacuum apparatus, and the magnetron magnetic circuit And a drive mechanism for rotating the target assembly.

  A rotating cylindrical magnetron sputtering cathode pair assembly according to the present invention is a pair of the above-mentioned rotating cylindrical magnetron sputtering cathode assemblies, and AC power in the range of 10 KHz to 100 KHz is preferably passed between the pair of cathode assemblies. It is configured to be able to.

  The rotating cylindrical magnetron sputtering cathode pair assembly according to the present invention is configured to be driven at the same rotational speed.

The metamode sputtering apparatus according to the present invention is a sputtering film forming apparatus provided with a substrate transfer means and a vacuum evacuation device inside, and is provided with at least one sputtering region and at least one reaction region. Wherein the cathode assembly or the cathode pair assembly is installed, the cathode assembly or the cathode pair assembly comprising Si, wherein the target material is preferably doped with aluminum in the range of 1 wt% to 5 wt%, Si doped with boron preferably in the range of 1 ppma to 1000 ppma, Si doped with phosphorus preferably in the range of 1 ppm to 500 ppm, ITO, Ta, Nb, Ti, TiO _1.0 to any one of TiO _1.8 , Zr and Al In the reaction region, plasma means, accelerated ion means, neutral active species means are used as means for causing the target material to react on the substrate. The sputtering area and the reaction area are physically separated from each other, and the substrate transfer means sequentially transfers the substrate to the sputtering area, the reaction area, and the adjacent area. By repeating this operation, the desired reactive compound thin film of the desired thickness of the target material can be deposited on the substrate.

  The multilayer metamode sputtering apparatus according to the present invention includes at least two sputter regions and at least one reaction region, and each of the sputter regions includes the cathode assembly or the cathode pair assembly. The reaction compound thin films can be alternately laminated.

  Further, the multi-mode metamode sputtering apparatus according to the present invention is capable of forming a desired alloy reaction compound thin film in a reaction region by simultaneously sputtering two sputtering materials into an alloy compound.

  Also, in the method for forming a thin film by metamode sputtering according to the present invention, at least two types of the cathode assembly or the cathode pair assembly are selected, and each of them is arranged in the first, second and other sputtering regions, and at least 1 Sputter film forming apparatus having two reaction regions installed at positions distant from the sputtering region, and having means capable of chemically reacting with the plasma means, ion means, neutral active species means or their mixing means as reaction means in the reaction area The process of evacuating with a vacuum evacuation apparatus, rotating the substrate transfer means, introducing Ar as a working gas, sputtering the first material in the first sputtering region, and then reacting in the reaction region is repeated. A thick film is formed, then the second material is sputtered in the second sputtering region, and then reacted in the reaction region. Perform deposition of the desired thickness Te, following repeat this process alternately, so as to form a multi-layered film on a substrate.

  According to the present invention, it is possible to provide a target assembly for a rotating cylindrical magnetron sputtering cathode that has almost no non-erosion region and is highly efficient in use, at low cost and without requiring special technology. An efficient metamode sputtering apparatus can be provided. Further, according to the present invention, it is possible to provide a film forming method by metamode sputtering that can form a homogeneous multilayer laminated film at low cost.

  Hereinafter, embodiments of the present invention will be described based on illustrated examples. FIGS. 1 to 3 show different embodiments of a target assembly for a rotating cylindrical magnetron sputtering cathode according to the present invention, in which (a) is a perspective view showing a manufacturing process, and (b) is a perspective view showing a finished state. FIG.

  In FIG. 1, 1 is a multi-faced cylindrical support prepared in advance, 2 is a bulk-shaped strip-shaped target material piece having a predetermined thickness and an inner side face shape that matches each outer face 1a of the multi-faced tubular support 1 It is. This strip-shaped target material piece 2 is made of a single crystal or polycrystalline Si material doped with 500 ppma of boron, and as is apparent from the figure, the cross-sectional shape is trapezoidal, and each of the multi-faced cylindrical support 1 When bonded to the outer surface 1a, the size of the outer surface is selected so that the adjacent target material pieces 2 are in close contact with each other including the thickness surface, but the shape of the target material pieces 2 is limited to this. A structure in which a plurality of strip-shaped target material pieces 2 form a polyhedron, for example, a combination of a rectangular cross-sectional shape and a trapezoidal shape as shown in FIG. Also good.

  The strip-shaped target material pieces 2 thus prepared are directly bonded to the respective outer side surfaces 1a of the multi-faced cylindrical support 1 as shown in FIG. As shown in FIG. 2, the strip-shaped target material piece 2 is bonded to a copper-made backing plate 3 similarly prepared with indium or the like, and then the backing plate 3 is attached to each of the multi-sided cylindrical support 1. By making it fixed to the outer surface 1a, it is made into a multi-faced cylindrical body. In this case, the strip-shaped target material piece 2 bonded to one backing plate 3 may be divided into a plurality of pieces as shown in FIG.

  Next, the multifaceted cylindrical body thus prepared is processed into a cylindrical shape using a diamond wheel grinding machine or the like, as shown in FIGS. 1 (b), 2 (b) and 3 (b). A target assembly A for a rotating cylindrical magnetron sputtering cathode is obtained. In this case, it is preferable to form the target assembly A into a so-called dog bone shape by grinding both end portions of the multi-faced cylindrical body so as to be thicker than the center portion. The reason for this is that, in general, a cylindrical target has a uniform overall wear by processing both ends that are most consumed by erosion thickly, so that both ends show a racetrack-like erosion during use. This is because it is possible to increase the service life of the target.

  In addition, when using brittle Si etc. as the strip-shaped target material piece 2, it is convenient on grinding processing that the corner of the strip-shaped target material piece is rounded before attaching to the multi-faced cylindrical support 1. is there. In the embodiment, the target assembly A is configured as a 12-sided multi-sided cylindrical body, but is preferably configured as a multi-sided cylindrical body having 6 or more corners for convenience of assembly and grinding. In addition, since a magnetic circuit is incorporated inside the cylindrical body, the larger the number of faces of the multi-faced cylindrical body, the more uniform the thickness at each location of each piece. As a result, a certain thickness (usually (Thickness of about 3 mm to 10 mm is often used). When the target is made, it can be thinned on average, and as a result, the distance between the surface of the target material and the magnet is reduced, so that the target surface magnetic field strength is increased and the sputtering efficiency is increased. be able to.

  The manufacturing method of the target assembly A for the rotating cylindrical magnetron sputtering cathode according to the present invention has been described above. As described in connection with the embodiment of FIG. If the strip-shaped target material piece 2 to be attached is divided into a plurality of pieces, a longer cylindrical target assembly can be easily manufactured, and a large-scale sputtering apparatus for mass production does not use difficult techniques. This is convenient and can be produced.

  In addition, when metals are used for target materials as well as brittle materials such as Si, it is impossible to directly form large or long cylindrical diameters directly into a cylindrical shape because it is a refractory metal. Although it is disadvantageous, the cylindrical target assembly can be produced economically and efficiently by joining the strip-shaped target material pieces as in the present invention.

  FIG. 5 shows an embodiment of a rotating cylindrical magnetron sputtering cathode assembly according to the present invention, and FIG. 6 shows another embodiment of the rotating cylindrical magnetron sputtering cathode assembly according to the present invention. ) Is a plan view, and (b) is a side view.

  In the embodiment shown in FIG. 5, a stainless steel 10-sided polyhedron is used as the polyhedral cylindrical support 1, and a polycrystalline Si material doped with boron at 500 ppma is used as the strip-shaped target material piece 2. In production, first, Ni is coated on each outer surface of each target material piece 2 and the multi-sided cylindrical support 1 as an indium diffusion prevention layer or adhesion layer, and each target material piece 2 is multifaceted with indium. It joined to each outer side surface of the cylindrical support body 1, and after that, it finished in the cylindrical shape of outer diameter 125mm (phi) with a diamond wheel, and obtained the target assembly A for rotating cylindrical magnetron sputtering cathodes. In addition, it is preferable to coat Cu after coating the Ni because the adhesion of the solder is improved.

  Next, a magnetron magnetic circuit 4 having a horizontal magnetic field component of 500 gauss on the target surface is arranged inside the support 1 of the assembly A, and a water cooling water channel (not shown) is installed to form a desired rotating cylinder. Type magnetron sputtering cathode assembly B was prepared. In this assembly B, the thickness of each target material piece 2 was 4 mm, the length was 800 mm, and the length of the support 1 was 1 m. In FIG. 5A, the three rows of magnets constituting the magnetron magnetic circuit 4 are arranged in parallel, but it is preferable to arrange these magnets radially.

  The cathode assembly B thus obtained was placed in a pair of vacuum vessels, Ar gas was introduced into the vessels, the assembly B was rotated at 15 rpm under a pressure of 0.5 Pa, and about 40 KHz · When sputtered by applying an alternating current of 20 KW, the life of each target material piece 2 is 7200 KWh or more, and the lifetime of a conventional planar magnetron target of 125 mm × 800 mm × 6 mmt is 6 times longer. It was.

  In the embodiment shown in FIG. 6, a stainless steel 10-sided polyhedron is used as the polyhedral cylindrical support 1, and a polycrystalline Si material doped with 500 ppma of boron is used as the strip-shaped target material piece 2. A copper material was used as 3. In the production process, first, each target material piece 2 is coated with Ni as an adhesion layer and a diffusion prevention layer, and 10 pieces are prepared by bonding them to the backing plate 3 with indium. After the entire target material piece is fixed on the support 1 by attaching the last one piece to the support 1 with the dovetail groove 5 and the attachment screw 6, the target material piece is fixed on the support 1 by the diamond wheel. A target assembly A for a rotating cylindrical magnetron sputtering cathode was obtained by finishing it into a cylindrical shape having an outer diameter of 125 mmφ. In FIG. 6A, the three rows of magnets constituting the magnetron magnetic circuit 4 are arranged in parallel, but these magnets are preferably arranged radially.

  Next, a magnetron magnetic circuit 4 having a horizontal magnetic field component of 800 gauss on the target surface is disposed inside the support 1 of the assembly A, and a water cooling water channel (not shown) is installed to form a desired rotating cylinder. Type magnetron sputtering cathode assembly B was prepared. In this assembly B, the thickness of each target material piece 2 was 6 mm, the length was 800 mm, and the length of the support 1 was 1 m.

  The cathode assembly B thus obtained was placed in a pair of vacuum vessels, Ar gas was introduced into the vessels, the assembly B was rotated at 15 rpm under a pressure of 0.5 Pa, and about 40 KHz · When sputtered by applying an alternating current of 20 KW, the life of each target material piece 2 is 7200 KWh or more, and the lifetime of a conventional planar magnetron target of 125 mm × 800 mm × 6 mmt is 6 times longer. It was.

  FIG. 7 shows another implementation of a rotating cylindrical magnetron sputtering cathode assembly B with a rotating cylindrical magnetron sputtering cathode target assembly A fabricated using strip-shaped target material pieces made of Si doped with 500 ppma of boron. It is a longitudinal cross-sectional view of an example. In the figure, 5 is a mounting flange, 6 is an electrode, 7 is rotatably mounted on a mounting vacuum flange 5 via a bearing 8 for rotation, and the multi-sided cylindrical support 1 having a closed top is provided. A rotation gear 9 that is fixed and supported in a watertight manner, a cooling water introduction pipe 9 that is concentrically inserted through the insulating collar 10 so as to be watertightly fixed to the mounting flange 5, and concentrically inserted in the rotation gear 7 so as to be watertightly rotatable. Is a cooling water discharge pipe which is inserted into the cooling water introduction pipe 10 and whose upper end reaches the vicinity of the upper end of the magnetron magnetic circuit 4 installed in the multi-sided cylindrical support 1.

  The rotating cylindrical magnetron sputtering cathode assembly B configured as described above rotates the rotating gear 7 while circulating the cooling water in the multi-sided cylindrical support 1 through the cooling water introduction pipe 9 and the cooling water discharge pipe 10. Is rotated by a drive device (not shown) to rotate the target assembly A with respect to the magnetic circuit 4 for use.

  FIG. 8 is a longitudinal sectional view showing an embodiment of a rotating cylindrical magnetron sputtering cathode pair assembly. In this embodiment, two rotating cylindrical magnetron sputtering cathode assemblies B shown in FIG. 7 are combined, and an alternating current can be applied between them. Therefore, in the figure, substantially the same members as those in FIG. Reference numeral 12 denotes a drive motor in which the main shaft 12a is rotatably attached to the mounting flange 5 via an insulating collar 13. Reference numeral 14 denotes a drive gear which is fixed to the main shaft 12a and meshes with the pair of rotation gears 7, 7. It is a second attachment flange attached to the attachment flange 5 via an insulating flange 16.

  In this embodiment, the pair of target assemblies A rotate in the same direction due to the rotation of the drive motor 12, but when it is desired to rotate in the opposite direction, between the drive gear 14 and one of the rotation gears 7. An intermediate gear may be interposed. In this case, the alternating current is generally 40 kHz to 60 kHz, preferably around 50 kHz, and an alternating current of about 10 kHz to 100 kHz can be applied.

  FIG. 9 is a plan view showing a schematic configuration of an example of a metamode sputtering apparatus configured so that two types of target materials can be used. In the figure, 17 is a substantially cylindrical vacuum container having a substrate preparation chamber 18 for film formation, 19 is a pair of vacuum pumps for bringing the vacuum container 17 into a predetermined vacuum state, 20 is a reaction chamber, and 21 is a reaction chamber. An inductively coupled high-frequency power source, 22 is an oxygen reactive gas source, and B1 is a structure as shown in FIG. The first rotating cylindrical magnetron sputtering cathode pair assembly, 23 is an AC power supply for Si target used in the first cathode pair assembly B1, and B2 is a target using Ta metal for the above-mentioned strip-shaped target material piece, for example 8 is a second rotating cylindrical magnetron sputtering cathode pair assembly configured as shown in FIG. 8 using the assembly, and 24 is a Ta ter used in the second cathode pair assembly B2. Tsu preparative AC power source, 25 is a gas source for supplying a tartness data ring gas into vacuum chamber 17, 26 is a cylindrical substrate holder is rotated by a driving device (not shown).

Since the present embodiment is configured as described above, the film-forming substrates prepared in the substrate preparation chamber 18 are sequentially transported by the substrate holder 26 that rotates in the direction of the arrow, and then by the first cathode pair assembly B1. In the first sputtering region to be formed, Si or a partially oxidized unreacted compound Si is formed on the surface, and then an oxidation reaction region (in this region, a high frequency is used to cause an oxidation reaction). The antenna transmits the energy through the quartz window into the reaction region and generates oxygen plasma.) A desired reactive compound (in this case, SiO ₂ ) thin film is generated by passing through the plasma. By repeating this process, a SiO ₂ film having a predetermined thickness can be obtained. After the SiO ₂ film having a predetermined thickness is obtained in the first sputtering region in this way, the second cathode pair assembly B2 is now put into operation, and the second sputtering region formed thereby is used. Then, a Ta ₂ O ₅ thin film is formed on the SiO ₂ film, and this is repeated to form a Ta ₂ O ₅ film having a predetermined thickness. In this manner, a desired optical thin film can be obtained by alternately stacking a desired number of SiO ₂ films and Ta ₂ O ₅ films.

  In the above case, the first cathode pair assembly B1 and the second cathode pair assembly B2 are operated alternately to obtain a laminated film, but these are operated simultaneously to form an alloy thin film, and the reaction It is also possible to form a film as an alloy compound. Moreover, in the said Example, although 2 types of target materials were used, it cannot be overemphasized that 3 or more types of target materials can also be used. That is, if necessary, three or more cathode pair assemblies can be used. Further, instead of using a cylindrical substrate holder, a circular flat plate type substrate holder may be used for transporting the substrate. Further, the cathode assembly B described above may be used instead of the first and second cathode pair assemblies B1 and B2.

  As mentioned above, although demonstrated based on various Examples, this invention is not limited to these Examples, A various deformation | transformation and correction are possible, and they all belong to the scope of the present invention.

1 shows an embodiment of a target assembly for a rotating cylindrical magnetron sputtering cathode according to the present invention, (a) is a perspective view showing a manufacturing process, and (b) is a perspective view showing a finished state. FIG. 6 shows another embodiment of the target assembly for a rotating cylindrical magnetron sputtering cathode according to the present invention, (a) is a perspective view showing a manufacturing process, and (b) is a perspective view showing a finished state. FIG. 5 shows still another embodiment of the target assembly for a rotating cylindrical magnetron sputtering cathode according to the present invention, (a) is a perspective view showing a manufacturing process, and (b) is a perspective view showing a finished state. It is a fragmentary top view of the target assembly at the time of combining the strip-shaped target material piece from which a cross-sectional shape differs. 1 shows an embodiment of a rotating cylindrical magnetron sputtering cathode assembly according to the present invention, where (a) is a plan view and (b) is a side view. The other Example of the rotation cylindrical magnetron sputtering cathode assembly which concerns on this invention is shown, respectively, (a) is a top view, (b) is a side view. FIG. 6 is a longitudinal sectional view of still another embodiment of a rotating cylindrical magnetron sputtering cathode assembly according to the present invention. 1 is a longitudinal sectional view of an embodiment of a rotating cylindrical magnetron sputtering cathode pair assembly according to the present invention. It is a top view which shows schematic structure of one Example of the metamode sputtering apparatus which concerns on this invention. It is a perspective view of an example of the conventional target assembly, (a) is a target material, (b) is a magnetron magnetic circuit. It is a perspective view of the other example of the conventional target assembly, (a) is target material, (b) is a magnetron magnetic circuit.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Polyhedral cylindrical support body 1a Outer side surface 2 Strip-shaped target material piece 3 Backing plate 4 Magnetron magnetic circuit 5 Mounting flange 6 Electrode 7 Rotating gear 8 Rotating bearing 9 Cooling water introduction pipe 10, 13 Insulating collar 11 Cooling water discharge pipe DESCRIPTION OF SYMBOLS 12 Drive motor 12a Main shaft 14 Drive gear 15 Second mounting flange 16 Insulating flange 17 Vacuum container 18 Substrate preparation chamber 19 Turbo vacuum pump 20 Oxidation reaction chamber 21 Inductive coupling type high frequency power source 22 Oxygen reaction gas source 23 Ta target AC power source 24 AC power supply for Si target 25 Sputtering gas source 26 Rotating cylindrical substrate holder A Rotating cylindrical magnetron sputtering
Sword target assembly B Rotating cylindrical magnetron sputtering machine
Sword assembly B1 First rotating cylindrical magnetron sputtering
Cathode pair assembly B2 Second rotating cylindrical magnetron sputtering
Cathode pair assembly E erosion region M permanent magnet piece S support T target material Y yoke

Claims (11)

  A target assembly for a rotating cylindrical magnetron sputtering cathode, in which a bulk strip target material piece is attached to each outer surface of a multi-sided cylindrical support, and the outer peripheral surface of the target material piece is processed into a cylindrical shape.   2. The target assembly for a rotating cylindrical magnetron sputtering cathode according to claim 1, wherein a plurality of pieces of the target material are bonded to each outer surface directly or via a backing plate. The target material piece is any one of Si doped with aluminum, Si doped with boron, Si doped with phosphorus, ITO, Ta, Nb, Ti, TiO _{1.0 to} TiO _1.8 , Zr and Al. 2. A target assembly for a rotating cylindrical magnetron sputtering cathode according to 2.   4. The target assembly for a rotating cylindrical magnetron sputtering cathode according to claim 1, wherein each of the target material pieces has a shape in which both end portions are thicker than the center portion. 5.   A magnetron magnet for enhancing plasma inside the multi-sided cylindrical support of the target assembly according to any one of claims 1 to 4, in order to form a racetrack-like erosion region on a target side surface. A circuit, an electrical line for energizing the target material, and a cooling water channel for cooling the target material are enclosed so as to be usable in a vacuum apparatus, and the target assembly with respect to the magnetron magnetic circuit A rotating cylindrical magnetron sputtering cathode assembly having a drive mechanism for rotating the magnet.   6. A rotating cylindrical magnetron sputtering cathode pair assembly configured such that two rotating cylindrical magnetron sputtering cathode assemblies according to claim 5 are paired and AC power can be passed between the pair of cathode assemblies.   A rotating cylindrical magnetron sputtering cathode pair assembly configured to drive the rotating cylindrical magnetron sputtering cathode pair assembly according to claim 6 at the same rotational speed. The cathode film assembly according to claim 5, wherein the sputtering film forming apparatus is provided with a substrate transfer means and a vacuum evacuation device therein, and is provided with at least one sputtering region and at least one reaction region. Alternatively, the cathode pair assembly according to claim 6 or 7 is installed, and the cathode assembly or the cathode pair assembly has a target material doped with Si doped with aluminum, Si doped with boron, or doped with phosphorus. Si, ITO, Ta, Nb, Ti, TiO _{1.0 to} TiO _1.8 , Zr and Al. In the reaction region, plasma means, accelerated ion means, and medium are used as means for causing the target material to react on the substrate. The active species means or a mixing means thereof, the sputtering region and the reaction region are installed in a physically separated position, the substrate transport means is A metamode sputtering apparatus that allows a substrate to pass through a sputter region, a reaction region, and a region adjacent to the substrate sequentially, and repeats this operation to deposit a desired reaction compound thin film of a target material having a desired thickness on the substrate. .   8. The method according to claim 8, comprising at least two sputter regions and at least one reaction region, wherein each sputter region comprises the cathode assembly according to claim 5 or the cathode pair assembly according to claim 6 or 7. A meta-mode sputtering apparatus for multilayer films, in which reactive compound thin films of these materials can be alternately laminated.   The metamode sputtering apparatus according to claim 8 or 9, wherein two sputter materials are sputtered simultaneously to form an alloy compound, and a desired alloy reaction compound thin film can be formed in a reaction region.   6. At least two types of cathode assemblies according to claim 5 or cathode pair assemblies according to claim 6 or 7 are selected, each disposed in a first, second and other sputter region, and at least one reaction. In a sputter deposition apparatus having a region located away from the sputter region, and having a means capable of chemically reacting with the plasma means, ion means, neutral active species means, or a mixing means thereof as the reaction means in the reaction area, Exhaust with a vacuum exhaust device, rotate the substrate transfer means, introduce Ar as working gas, sputter the first material in the first sputtering region, and then react in the reaction region to repeat the desired thickness Perform film formation, then sputter the second material in the second sputtering region, then react in the reaction region to form the desired thickness, Repeat steps alternately, thin film deposition method according meth mode sputtering to form a multilayer laminated film on the substrate.

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