JP2007115850A - Optical semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a small-sized optical semiconductor device which is complete in a package size. <P>SOLUTION: The optical semiconductor device comprises a first case 21 which has a first recess 11, and in which a semiconductor light emitting element 39 is mounted on the bottom of the first recess 11; and a second case 28 which has a second recess 22, and in which a semiconductor light emitting element 41 is mounted on the bottom of the second recess 22. The second case 28 is fixed to the first case 21 so that the semiconductor light emitting element 39 confronts the semiconductor light emitting element 41. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an optical semiconductor device.

An optical semiconductor device, in particular, a photocoupler in which a semiconductor light emitting element and a semiconductor light receiving element are combined, is widely used for electronically insulated signal transmission in electronic equipment.
Photorelays that combine semiconductor light-emitting elements, semiconductor light-receiving elements, and switching elements are widely used for the purpose of increasing the reliability of mechanical relays used in measuring equipment such as testers and modems. ing.

  In conventional photocouplers and photorelays, for example, a semiconductor light emitting element is mounted on a first lead frame, a semiconductor light receiving element and a switching element are mounted on a second lead frame, and then the semiconductor light emitting element and the semiconductor light receiving element are opposed to each other. The space between the element and the semiconductor light receiving element is primarily sealed with a light transmitting resin such as silicon, and the first and second lead frames, the semiconductor light emitting element, the semiconductor light receiving element, and the entire switching element are opaque with epoxy or the like. It was formed by secondary sealing with resin.

  In addition, after the semiconductor light emitting element and the semiconductor light receiving element are mounted on the same lead frame, the semiconductor light emitting element and the entire semiconductor light receiving element are primarily sealed with a translucent resin such as silicon, and the lead frame and the semiconductor are further sealed. The entire light emitting element and the semiconductor light receiving element are formed by secondary sealing with an opaque resin such as epoxy.

  In recent years, the packaging of photocouplers and photorelays has been reduced in order to improve the mounting density of electronic devices typified by mobile portable terminals and testers that use thousands of photorelays, and to reduce the size of the devices. Is required.

  However, in a package in which the lead frame is molded with resin, it is necessary to ensure that the distance between the lead frame and the package end surface and the translucent resin and the package end surface can be relaxed when the optical semiconductor device is soldered to the substrate. Therefore, there is a problem that it is difficult to downsize the package.

  In addition, there is a problem that a package having the dimensions as designed cannot be obtained because the resin shape variation occurs when molding.

  On the other hand, an optical semiconductor device having a package using a substrate on which wiring is formed without using a lead frame is known (see, for example, Patent Document 1).

  The optical semiconductor device disclosed in Patent Document 1 includes a laminated wiring board including a first wiring board having an opening and a second wiring board laminated on the first wiring board, and the second wiring A semiconductor light emitting element is placed on the surface of the substrate at a position corresponding to the opening.

  In addition, the switching element is electrically connected to the multilayer wiring board via ball bumps, the light receiving part is opposed to the opening of the first wiring board, and the semiconductor light receiving element is interposed via the ball bump so as to cover the opening. Are electrically connected.

  The semiconductor light-receiving element is provided with a solid first light-transmitting resin so as to cover the light-receiving portion, and the surface of the opening of the first wiring substrate is filled so as to be in contact with the first light-transmitting resin. A gel-like second translucent resin that can be deformed by pressing is provided.

  Further, an epoxy sealing resin is provided on the surface of the first wiring substrate so as to cover the first light-transmitting resin and the second light-transmitting resin.

However, in the optical semiconductor device disclosed in Patent Document 1, a sealing resin such as epoxy is applied to the surface of the first wiring board by a potting method, a printing method, or the like. There is a problem that the height of the package varies due to variations in the package.
JP 2004-63764 A

  The present invention provides a small optical semiconductor device having a uniform package size.

  An optical semiconductor device of one embodiment of the present invention has a first recess, a first housing on which a semiconductor light emitting element is placed on the bottom surface of the first recess, and a second recess. A second housing on which a semiconductor light receiving element is mounted on a bottom surface of the second recess, and the first housing is disposed on the first housing so that the semiconductor light receiving element faces the semiconductor light receiving element. It is characterized in that two cases are fixed.

  An optical semiconductor device according to another aspect of the present invention includes a first housing having a first recess, a semiconductor light emitting element and a semiconductor light receiving element juxtaposed on a bottom surface of the first recess, and a second recess. A second housing having a light reflecting surface formed in the second recess, the semiconductor light emitting element and the semiconductor light receiving element and the reflecting surface of the second recess facing each other. The second casing is fixed to the first casing.

  According to the present invention, a small optical semiconductor device with a uniform package size can be obtained.

  Embodiments of the present invention will be described below with reference to the drawings.

  1A and 1B are diagrams showing an optical semiconductor device according to a first embodiment of the present invention, in which FIG. 1A is a plan view seen through the inside, and FIG. 1B is a cross-sectional view taken along line A- of FIG. It is sectional drawing cut | disconnected along the A line and looked at the arrow direction.

  This embodiment is a case of a facing photorelay in which a semiconductor light emitting element, a semiconductor light receiving element, and a switching element are arranged to face each other.

First, the package of the optical semiconductor device 10 of this embodiment will be described.
As shown in FIG. 1, the package of the optical semiconductor device 10 includes a first casing 21 having a first recess 11 and a second casing 28 having a second recess 22, and the first recess 11 and the second recess 22. Are integrated into a box shape.

  The first housing 21 includes a first base 12 having a first recess 11, a first pad 13, a second pad 14 (not shown) provided on the upper surface of the first base 12, and a first recess. 11, a first electrode lead 15 and a second electrode lead 16 provided in the bottom, a first external terminal 17, a second external terminal 18, a third external terminal 19, a fourth electrode provided on the first base 12. It has an external terminal 20 (not shown).

  The second housing 28 includes a second base 23 having a second recess 22 on the upper surface, a third pad 24 and a fourth pad 25 provided on the upper surface of the second base 23, and a bottom portion of the second recess 22. The third electrode lead 26 and the fourth electrode lead 27 are provided.

  The first recess 11 provided on the upper surface of the first base 12 has a square shape, and the first and second electrode leads 15 and 16 are provided on one side (left side in the drawing) of the first recess 11 in the bottom. Is provided.

  The first and second pads 13, 14 provided on the upper surface of the first base 12 are spaced apart from each other on the opposite side (the right side in the drawing) of the first recess 11.

  The first external terminal 17 is electrically connected to the first electrode lead 15 via the connection portion 29, and the second external terminal 18 is electrically connected to the second electrode lead 16 via the connection portion 30, The first and second electrode leads 15 and 16 are provided on the lower surface of the first base 12 so as to extend to one side.

  The third external terminal 19 is electrically connected to the first pad 13 via the connection portion 31, and the fourth external terminal 20 is electrically connected to the second pad 14 via the connection portion 32 (not shown). The first base 12 is provided on the lower surface.

  Similarly, the 2nd recessed part 22 provided in the upper surface of the 2nd base 23 is a square shape, and the 3rd and 4th is on the opposite side (right side of a figure) side of the 2nd recessed part 22 in the bottom part. Electrode leads 26 and 27 are provided.

  The third and fourth pads 24 and 25 provided on the upper surface of the second base 23 are disposed on the opposite side (the right side in the drawing) of the second recess 22 from each other.

  More specifically, the first base 12 includes a first substrate 33 and a second substrate 34 made of, for example, a ceramic member.

  The first substrate 33 is formed to have a thickness of, for example, 0.1 mm, the first and second electrode leads 15 and 16 are formed on the upper surface, and the first to fourth external terminals 17, 18 and 19 are formed on the lower surface. , 20 are formed, and connection portions 29, 30 for connecting the first and second electrode leads 15, 16 and the first and second external terminals 17, 18 are formed.

  The second substrate 34 is formed to have a thickness of 0.4 mm, for example, and a rectangular through hole 34 a having an opening width of 2.4 mm is formed.

  Further, on the inner wall on the side opposite to the one side of the through hole 34a, a connection part 31 for connecting the first pad 13 to the third external terminal 19 and a connection part 32 for connecting the second pad 14 to the fourth external terminal 20 ( (Not shown) is formed.

  Similarly, the second base 23 includes a third substrate 35 and a fourth substrate 36 made of, for example, a ceramic member.

The third substrate 35 is formed with a thickness of 0.1 mm, for example, and third and fourth electrode leads 26 and 27 are formed on the upper surface thereof.
The fourth substrate 36 is formed to have a thickness of 0.4 mm, for example, and a rectangular through hole 36a having an opening width of 2.4 mm is formed.

  Further, connecting portions 37 and 38 for connecting the third and fourth pads 24 and 25 and the third and fourth electrode leads 26 and 27, respectively, are formed on the inner wall on the opposite side to the one side of the through hole 36a.

  Here, the opening width of the first concave portion 11 of the first base 12 and the opening width of the second concave portion 22 of the second base 23 do not have to be equal, but it is desirable to set them substantially equal.

  The first electrode lead 15 is provided with a mount bed 15 a for mounting the semiconductor light emitting element on one end portion on the center side of the first recess 11.

Similarly, the third electrode lead 26 is provided with a mount bed 26a for mounting a switching element and a mount bed 26b for mounting a semiconductor light receiving element on one end of the second recess 22 on the center side. Yes.
Further, the fourth electrode lead 27 is provided with a mount bed 27a for placing a switching element at one end on the center side.

Next, the optical semiconductor device 10 using the package having the above structure will be described.
As shown in FIG. 1, the optical semiconductor device 10 includes a semiconductor light emitting element 39 placed on a mount bed 15 a provided in the first recess 11 of the first base 12, and a bottom electrode (not shown) and a first electrode. The first electrode lead 15 is electrically connected, and the upper electrode (not shown) of the semiconductor light emitting element 39 and the second electrode lead 16 are electrically connected via the bonding wire 40.

  A switching element 42a is mounted on a mount bed 26a provided in the second recess 22 of the second base 23, and the lower surface electrode D (not shown) and the third electrode lead 26 are electrically connected to mount. The switching element 42b is mounted on the bed 27a, and the lower surface electrode D (not shown) and the fourth electrode lead 27 are electrically connected.

  Further, the semiconductor light receiving element 41 is mounted on the mount bed 26b, and the upper surface electrodes G and S of the switching elements 42a and 42b and the upper surface electrodes A and K of the semiconductor light receiving element 41 are electrically connected via bonding wires 43, respectively. Connected.

  The first recess 11 of the first base 12 is filled until a first sealing resin 44 having translucency, for example, a silicon resin, reaches the upper surface in order to protect the semiconductor light emitting element 39 and the bonding wire 40 from the outside. Has been.

  Similarly, in the second recess 22 of the second base 23, a second light-transmitting element is provided to protect the semiconductor light receiving element 41, the first and second switching elements 42 a and 42 b and the bonding wire 43 from the outside. The sealing resin 45, for example, silicon resin is filled until reaching the upper surface.

  The first and second pads 13 and 14 and the third and fourth pads 24 and 25 are attached by attaching the second base 23 to the first base 12 so that the first concave portion 11 and the second concave portion 22 face each other. Are electrically connected via conductive bumps (not shown).

  The first base 12 and the second base 23 are fixed by an insulating adhesive 46, and the first casing 21 and the second casing 28 are integrated into a box shape.

  As a result, the first sealing resin 44 and the second sealing resin 45 are in close contact with each other and optically integrated, so that the light a emitted from the semiconductor light emitting element 39 is emitted from the first sealing resin 44 and the second sealing resin 44. The light enters the light receiving surface of the semiconductor light receiving element 41 without being scattered at the interface b of the sealing resin 45.

  The semiconductor light emitting element 39 is an infrared LED having, for example, GaAs or GaAlAs as a light emitting layer, and the semiconductor light receiving element 41 is, for example, a silicon photodiode array having light receiving sensitivity in the infrared region, and the first and second switching elements 42a. , 42b are, for example, low on-resistance vertical MOS transistors.

  In the optical semiconductor device 10, the first external terminal 17 and the second external terminal 18 are used as the first external terminal 17, for example, the cathode terminal of the semiconductor light emitting element 39, and the second external terminal 18 as the anode terminal of the semiconductor light emitting element 39. By connecting to a power source (not shown), infrared light is emitted from the semiconductor light emitting device 39.

  The third external terminal 19 is, for example, the drain terminal of the switching element 42a, and the fourth external terminal 20 is the drain terminal of the switching element 42b. A power source and a load (not shown) are connected between the third external terminal 19 and the fourth external terminal 20. 2), the switching elements 42a and 42b are switched according to the infrared light from the semiconductor light emitting element 39, and function as a nonpolar photorelay in which the input and output are electrically insulated.

  Next, a method for manufacturing the optical semiconductor device 10 using the package having the above structure will be described with reference to FIGS.

  2 is a plan view showing a substrate on which a plurality of first casings 21 are formed in a lump, FIG. 3 is a cross-sectional view showing the main part of the manufacturing process of the first casing 21, and FIG. 4 shows a plurality of second casings 23. FIG. 5 is a cross-sectional view showing the main part of the manufacturing process of the second housing 23, and FIG. 6 shows the first and second casings 21 and 23 formed together. FIG. 7 is a cross-sectional view sequentially illustrating the assembly process of the optical semiconductor device 10.

  As shown in FIG. 2, the first housing 21 is collectively formed on a sheet-like base 50 in which a plurality of first housings 21 are arranged in a grid.

  That is, the first and second pads 13 and 14 are formed on the upper surface of the first base 12 arranged in a lattice pattern, and the first and second electrode leads 15 and 16 are formed in the bottom of the first recess 11. First to fourth external terminals 17, 18, 19, and 20 are formed on the bottom surface of the first base 12, and connection portions 29, 30, 31, and 32 that penetrate the first base 12 are formed.

  More specifically, as shown in FIG. 3, the first base 12 is manufactured by laminating a first substrate 33 and a second substrate 34.

  First, for example, a first substrate 33 made of green ceramics having a thickness of 0.1 mm and having a rectangular through hole (not shown) is prepared, and a first electrode lead 15 having a mount bed 15a on the upper surface is prepared. The second electrode lead 16 is formed by nickel and gold plating, for example, and the first to fourth external terminals 17, 18, 19, and 20 are formed on the lower surface by nickel and gold plating, respectively.

  Next, the connection parts 29 and 30 which penetrate the 1st board | substrate 33 and the lower part of the connection parts 31 and 32 are formed in the inner wall of a through-hole, for example by silver plating. As a result, the first and second electrode leads 15 and 16 and the first and second external terminals 17 and 18 are electrically connected.

  Next, a non-sintered ceramic second substrate 34 having a thickness of 0.4 mm in which a square through hole 34a having an opening width of 2.4 mm, for example, is formed at the center is prepared. The upper portions of the connection portions 31 and 32 are formed on the inner walls of the two pads 13 and 14 and the through-hole 34a by, for example, nickel and gold plating.

  Next, after laminating the first substrate 33 and the second substrate 34 made of unsintered ceramics, pressurization and low-temperature sintering are performed so that a plurality of first casings 21 are arranged in a lattice shape to form a sheet-like base 50 is obtained.

  Similarly, as shown in FIG. 4, the second housing 28 is collectively formed on a sheet-like base 51 in which a plurality of second housings 28 are arranged in a lattice shape.

  That is, the third and fourth pads 24 and 25 are formed on the upper surface of the second base 23 arranged in a lattice pattern, and the third and fourth electrode leads 26 and 27 are formed in the bottom of the second recess 22. Connection portions 37 and 38 are formed along the inner wall surface of the second recess 22.

  More specifically, as shown in FIG. 5, the second base 23 is manufactured by laminating a third substrate 35 and a fourth substrate 36.

  As the second base 23, for example, a third substrate 35 made of unsintered ceramic having a thickness of 0.1 mm is prepared, and a third electrode lead 26 having mount beds 26a and 26b on the upper surface and a fourth electrode having a mount bed 27a. The electrode lead 27 is formed by nickel and gold plating, for example.

  Next, a fourth substrate 36 of non-sintered ceramics having a thickness of 0.4 mm, in which a square through hole 36a having an opening width of 2.4 mm, for example, is formed at the center is prepared, and third and The four pads 24 and 25 and the connecting portions 37 and 38 are formed by nickel and gold plating, for example.

  Next, after laminating the third substrate 35 and the fourth substrate 36 of non-sintered ceramic, pressurization and low-temperature sintering are performed, whereby a plurality of second casings 28 are arranged in a lattice shape to form a sheet-like base 51 is obtained.

Next, as shown to Fig.6 (a), the 1st housing 21 is obtained by dividing the sheet-like base 50 into each piece with the blade 52, for example.
Similarly, as illustrated in FIG. 6B, the second casing 28 is obtained by dividing the sheet-like base 51 into individual pieces by, for example, a blade 52.

Next, as shown in FIG. 7A, the semiconductor light-emitting element 39 is mounted on the mount bed 15a in the first recess 11 of the first base 12 with a conductive paste or eutectic, and the bottom electrode is attached to the first electrode. Connect to electrode lead 15.
Similarly, the semiconductor light receiving element 41 is mounted on the mount bed 26b in the second recess 22 of the second base 23, the switching element 42a is mounted on the mount bed 26a, and the switching element 42b is mounted on the mount bed 27a with conductive paste or eutectic. To do.

Next, as shown in FIG. 7B, after the upper electrode of the semiconductor light emitting element 39 and the second electrode lead 14 are electrically connected via the bonding wire 40, the first and second pads 13, 14 are connected. On the top, for example, Au balls 53 are formed as a bonding agent.
Similarly, the semiconductor light receiving element 41 and the switching elements 42 a and 42 b are electrically connected via the bonding wire 43.

Next, as shown in FIG. 7C, the dispenser 54 fills the first recess 11 of the first base 12 with silicon resin and seals with the first sealing resin 44.
Similarly, the second recess 22 of the second base 23 is filled with silicon resin and sealed with the second sealing resin 45.

  Next, as shown in FIG. 7D, an insulating adhesive 56, such as a non-connecting paste, is applied to the entire upper surface of the first base 12 by the dispenser 55.

  Next, as shown in FIG. 7 (e), the second housing 28 is placed on the hot plate 57 and sucked by the vacuum chuck 58 so that the second recess 22 faces the first recess 11 from above. After the first casing 21 is lowered and the second base 23 is crowned on the first base 12, it is fixed by applying heat or ultrasonic waves.

  Thus, the optical semiconductor device 10 in which the semiconductor light emitting element 39, the semiconductor light receiving element 41, and the switching elements 42a and 42b are mounted on the package in which the first casing 21 and the second casing 28 shown in FIG. 1 are integrated is manufactured. It is possible.

  As described above, in the optical semiconductor device 10 of the present embodiment, the first housing 21 and the second housing 28 that have been molded in advance are integrated, so that the variation in package size is prevented and the optical semiconductor device is manufactured. can do. As a result, small optical semiconductor devices with uniform sizes can be obtained.

Although the case where two switching elements 42a and 42b are used in the optical semiconductor device 10 has been described here, only one switching element may be used. In that case, it functions as a polar photorelay.
Further, there may be no switching element. In that case, the switching element functions as a so-called photocoupler.

  Moreover, although the case where the division | segmentation into each piece was performed with the braid | blade 52 was demonstrated, you may carry out with a wire saw. According to the wire saw, since the cutting allowance can be reduced, there is an advantage that material loss can be reduced.

  8A and 8B are diagrams showing an optical semiconductor device according to Embodiment 2 of the present invention. FIG. 8A is a plan view seen through the inside thereof, and FIG. 8B is a cross-sectional view taken along line B- in FIG. It is sectional drawing cut | disconnected along the B line and looked at the arrow direction.

  In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.

  The present embodiment is different from the first embodiment in that the third and fourth external terminals are provided on the second base.

  That is, as shown in FIG. 8, the package of the optical semiconductor device 60 of the present embodiment includes a first housing 21 having the first recess 11 and a second housing 28 having the second recess 22. 11 and the 2nd recessed part 22 are opposed, and it is integrated in the box shape.

  The first housing 21 includes a first base 12 having a first recess 11 on the upper surface, a first electrode lead 15 and a second electrode lead 16 (not shown) provided in the bottom of the first recess 11. And a first external terminal 17 and a second external terminal 18 (not shown) provided on the first base 12.

  The second casing 28 includes a second base 23 having a second recess 22 on the upper surface, a third electrode lead 26 and a fourth electrode lead 27 provided in the bottom of the second recess 22, and the second base 23. The third external terminal 19 and the second external terminal 20 are provided.

  The first recess 11 provided on the upper surface of the first base 12 has a rectangular shape, and the first and second electrode leads 15 are disposed on the opposite side (the right side in the drawing) of the first recess 11 in the bottom. , 16 are provided.

  The first external terminal 17 is electrically connected to the first electrode lead 15 via the connection portion 29, and the second external terminal 18 is electrically connected to the second electrode lead 16 and the connection portion 30 (not shown). Are connected to each other, and are provided on the lower surface of the first base 12 so that the first and second electrode leads 15 and 16 extend outward.

  Similarly, the 2nd recessed part 22 provided in the upper surface of the 2nd base 23 is a square shape, and the 3rd and 4th is on the opposite side (right side of a figure) side of the 2nd recessed part 22 in the bottom part. Electrode leads 26 and 27 are provided.

  The third external terminal 19 is electrically connected to the third electrode lead 26 via the connection portion 31, and the fourth external terminal 20 is electrically connected to the fourth electrode lead 27 via the connection portion 32. The third and fourth electrode leads 26 and 27 are provided on the lower surface of the second base 23 so as to extend outward.

  As described above, in the optical semiconductor device 60 of the present embodiment, since the third and fourth external terminals 19 and 20 are provided on the second base 23, the third and fourth electrode leads 26 and 27 and the third electrode Further, there is an advantage that the electrical connection with the fourth external terminals 19 and 20 becomes easy.

  Here, the case where the first to fourth external connection terminals 17, 18, 19, and 20 are provided on the same side of the first base 21 and the second base 23 has been described, but it is shown in FIG. As such, they may be provided on opposite sides. Moreover, as shown in FIG.9 (b), you may provide in the center part of the same edge | side side.

  10A and 10B are views showing an optical semiconductor device according to Example 3 of the present invention. FIG. 10A is a plan view seen through the inside, and FIG. 10B is a cross-sectional view taken along line C- of FIG. It is sectional drawing cut | disconnected along the C line and looked at the arrow direction.

  In the present embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.

  The present embodiment is different from the first embodiment in that a reflection type photocoupler in which a semiconductor light emitting element and a semiconductor light receiving element are mounted on a first base.

  First, the package of the optical semiconductor device 70 of the present embodiment will be described. As shown in FIG. 10, the package of the optical semiconductor device 70 includes a first casing 21 having a first recess 11 and a second casing 75 having a second recess 73, and the first recess 11 and the second recess 73. Are integrated into a box shape.

  The first housing 21 includes a first base 12 having a first recess 11 on the upper surface, first to fourth electrode leads 15, 16, 71, 72 provided in the bottom of the first recess 11, The first casing 12 has first to fourth external terminals 17, 18, 19, 20, and the second casing 75 has only a second base 74 having a second recess 73 on the upper surface. ing.

The first recess 11 provided on the upper surface of the first base 12 has a square shape, and first to fourth electrode leads 15, 16, 71, 72 are provided in the bottom thereof.
Of these, the first and second electrode leads 15 and 16 are on one side of the first recess 11 (the left side in the figure), and the third and fourth electrode leads 71 and 72 are on the opposite side to one side of the first recess 71. They are arranged apart from each other (on the right side in the figure).

  The first to fourth external terminals 17, 18, 19, and 20 are electrically connected to the first to fourth electrode leads 15, 16, 71, and 72 through connection portions 29, 30, 31, and 32, respectively. The first to fourth electrode leads 15, 16, 71, 72 are provided on the lower surface of the first base 12 so as to extend outward.

  More specifically, the first base 12 includes a first substrate 33 and a second substrate 34 made of, for example, a ceramic member.

The first substrate 33 is formed, for example, to a thickness of 0.1 mm, and the first to fourth electrode leads 15, 16, 71, 72 are formed on the upper surface thereof, and the first to fourth external terminals 17 are formed on the lower surface thereof. 18, 19, 20 are formed, and the connection parts 29, 30, 31 for connecting the first to fourth electrode leads 15, 16, 71, 72 and the first to fourth external terminals 17, 18, 19, 20 respectively. , 32 are formed.
The second substrate 34 is formed to have a thickness of 0.4 mm, for example, and a rectangular through hole 34 a having an opening width of 2.4 mm is formed.

  On the other hand, the second base 74 is a single substrate made of a ceramic member formed to a thickness of 0.2 mm, for example, and the upper surface thereof has, for example, a circular shape with an opening diameter of 2.4 mm and a dome toward the bottom. A second recess 73 curved in a shape is formed.

  Here, the opening width of the first concave portion 11 having a square shape and the opening diameter of the second concave portion 73 having a circular shape do not have to be equal, but it is desirable that they are set to be approximately equal.

  The first electrode lead 15 is provided with a mount bed 15a for mounting the semiconductor light emitting element at one end portion on the center side of the first recess 11, and the third electrode lead 71 is provided with a semiconductor on one end portion on the center side. A mount bed 71a for placing the light receiving element is provided.

  The first to fourth external terminals 17, 18, 19, and 20 are provided on the lower surface of the first substrate 33, respectively, and connect portions 29, 30, 31, and 32 formed through the first substrate 33. And electrically connected to the first to fourth electrode leads 15, 16, 71, 72.

  Next, an optical semiconductor device 70 using the package having the above structure will be described. As shown in FIG. 10, the optical semiconductor device 70 has a semiconductor light emitting element 39 mounted on a mount bed 15 a provided in the first recess 11 of the first base 12, and a bottom electrode (not shown) and a first electrode. The first electrode lead 15 is electrically connected, and the upper electrode (not shown) of the semiconductor light emitting element 39 and the second electrode lead 16 are electrically connected via a bonding wire (first connection conductor) 40. Yes.

  Further, the semiconductor light receiving element 33 is placed on the mount bed 71 a provided in the first recess 11 of the first base 12 to electrically connect the lower surface electrode (not shown) and the third electrode lead 71. The upper electrode (not shown) of the semiconductor light receiving element 33 and the fourth electrode lead 72 are electrically connected via the bonding wire 43.

  In order to protect the semiconductor light emitting element 39, the semiconductor light receiving element 41, and the bonding wires 40, 43 from the outside, a first sealing resin 44 having translucency is provided in the first recess 11 of the first base 12, for example, Silicon resin is filled, and the upper surface of the first sealing resin 44 is substantially flat.

  Similarly, the second recess 73 of the second base 74 is filled with a second sealing resin 45 having translucency, for example, a silicon resin, and the upper surface of the second sealing resin 45 is formed almost flat. ing.

  As a result, the first sealing resin 44 and the second sealing resin 45 are in close contact with each other and optically integrated, so that the light a emitted from the semiconductor light emitting element 39 is emitted from the first sealing resin 44 and the second sealing resin 44. The light c reflected by the dome-shaped curved surface of the second recess 73 of the second base 74 without being scattered at the interface b of the sealing resin 45 is incident on the light receiving surface of the semiconductor light receiving element 41.

  In the optical semiconductor device 70, the first external terminal 17 is used as, for example, the cathode terminal of the semiconductor light emitting element 39, and the second external terminal 18 is used as the anode terminal of the semiconductor light emitting element 39, for example. Infrared light is emitted from the semiconductor light emitting device 39 by connecting to the light source.

  Further, a load (not shown) is applied to the anode terminal 20 and the cathode terminal 19 using the third external terminal 19 as a cathode terminal of the semiconductor light receiving element 41 and the fourth external terminal 20 as an anode terminal of the semiconductor light receiving element 41, for example. By connecting, a photocurrent corresponding to the energy of the received infrared light is obtained, and the input signal functions as a photocoupler that is electrically insulated and transmitted to the load.

  Next, a method for manufacturing the optical semiconductor device 70 using the package having the above structure will be described with reference to FIGS.

  FIG. 11 is a plan view showing a substrate on which a plurality of first casings 21 are collectively formed, FIG. 12 is a cross-sectional view showing the main part of the manufacturing process of the first casing 21, and FIG. 13 shows a plurality of second casings 75. FIG. 12 is a cross-sectional view sequentially illustrating the assembly process of the optical semiconductor device 70. FIG.

  As shown in FIG. 11, the first housing 21 is collectively formed on a sheet-like base 78 in which a plurality of first housings 21 are arranged in a lattice pattern.

  That is, the first to fourth electrode leads 15, 16, 71, 72 are formed in the bottom of the first recess 11 on the upper surface of the first base 12 arranged in a lattice pattern, and the bottom of the first base 12 is formed. First to fourth external terminals 17 to 20 are formed, and connecting portions 29, 30, 31, and 32 are formed through the first base 12.

  More specifically, as shown in FIG. 12, the first base 12 is manufactured by laminating a first substrate 33 and a second substrate 34.

  First, for example, a first substrate 33 made of green ceramics having a thickness of 0.1 mm and having rectangular through holes (not shown) formed at four corners is prepared, and a first bed having a mount bed 15a on the upper surface is prepared. The electrode lead 15, the second electrode lead 16, and the third electrode lead 71 and the fourth electrode lead 72 having the mount bed 71a on the upper surface are formed by, for example, nickel and gold plating, and the first to fourth external terminals are formed on the lower surface. 17, 18, 19, and 20 are formed by nickel and gold plating, for example.

  Next, on the inner wall surface of the through hole, connection portions 29, 30, 31, 32 that penetrate the first substrate 33 are formed by silver plating, for example, and the first to fourth electrode leads 15, 16, 71, 72 and the first The first to fourth external terminals 17, 18, 19, and 20 are electrically connected.

  Next, a non-sintered ceramic second substrate 34 having a thickness of 0.4 mm in which, for example, a rectangular through hole 34 a having an opening width of 2.4 mm is formed at the center is prepared, and the connecting portion is connected to the through hole 34 a. 29, 30, 31, and 32 are stacked on the first substrate 33 so as to be inscribed therein.

  Next, the laminated first ceramic substrate 33 and the second substrate 34 are pressed and sintered at a low temperature to thereby form a sheet-like base 78 in which a plurality of first casings 21 are arranged in a lattice pattern. Is obtained.

  Similarly, as shown in FIG. 13, the second casing 75 is collectively formed on a sheet-like base 79 in which a plurality of second housings 75 are arranged in a grid.

  That is, as the second base 74, for example, a non-sintered ceramic substrate having a thickness of 0.2 mm is prepared, and after forming the circular dome-shaped second concave portion 73 curved toward the bottom in a lattice shape, By performing low-temperature sintering, a sheet-like base 79 in which the second casings 75 are arranged in a lattice shape is obtained.

  Next, the first and second casings 21 and 75 are obtained by dividing the sheet-like bases 78 and 79 into individual pieces with, for example, a blade.

Next, as shown in FIG. 14A, the semiconductor light emitting device 39 is mounted on the mount bed 15a in the first recess 11 of the first base 12 with a conductive paste or eutectic, and the lower surface electrode is attached to the first electrode. Connect to electrode lead 15.
Similarly, the semiconductor light receiving element 41 is mounted on the mount bed 61 a with a conductive paste or eutectic, and the lower surface electrode is connected to the third electrode lead 71.

  Next, as shown in FIG. 14B, the upper surface electrode of the semiconductor light emitting element 39 and the second electrode lead 16 are electrically connected via the bonding wire 40, and the upper surface electrode of the semiconductor light receiving element 41 and the fourth electrode are connected. The electrode lead 72 is electrically connected via the bonding wire 43.

Next, as shown in FIG. 14C, the dispenser 54 fills the first recess 11 of the first base 12 with silicon resin and seals with the first sealing resin 44.
Similarly, the second recess 73 of the second base 74 is filled with silicon resin and sealed with the second sealing resin 45.

  Next, as shown in FIG. 14D, the adhesive 56 is applied to the entire upper surface of the first base 12 by the dispenser 55.

  Next, as shown in FIG. 14 (e), the second base 74 is placed on the hot plate 57 and sucked by the vacuum chuck 58 so that the second recess 73 faces the first recess 11 from above. After the first casing 21 is lowered and the second base 74 is attached to the first base 12, it is fixed by heating or applying ultrasonic waves.

  Thus, it is possible to manufacture the optical semiconductor device 70 in which the semiconductor light emitting element 39 and the semiconductor light receiving element 41 are mounted in a package in which the first casing 21 and the second casing 75 shown in FIG. 10 are integrated. .

  As described above, in the optical semiconductor device 70 of the present embodiment, the semiconductor light emitting element 39 and the semiconductor light receiving element 41 are housed in the first housing 12 that has been molded in advance, and the second recess 73 of the second housing 74 is optically transmitted. Since it is a reflective surface, there is an advantage that the height of the package can be reduced.

  Although the case where the semiconductor light emitting element 39 and the semiconductor light receiving element 41 are accommodated in the first housing 12 has been described here, a switching element may be accommodated to operate as a photo relay.

  FIG. 15 is a sectional view showing a second housing of the optical semiconductor device according to the fourth embodiment of the present invention. In the present embodiment, the same components as those in the third embodiment are denoted by the same reference numerals, description thereof will be omitted, and different portions will be described.

  The present embodiment is different from the third embodiment in that a light reflecting film is formed in the second recess 73 of the second base 74.

  That is, as shown in FIG. 15, a light reflecting film 80 is formed in the second recess 73 of the second base 74 by plating or vapor-depositing a metal film such as gold, silver, or aluminum.

  The light reflecting film 80 can improve the optical coupling efficiency between the semiconductor light emitting element 39 and the semiconductor light receiving element 41.

  As described above, since the light reflecting film 80 is formed in the second recess 73 of the second base 74 in the second housing 74 of the optical semiconductor device of this embodiment, the light receiving sensitivity of the semiconductor light receiving element 41 is improved. In addition, there is an advantage that the reliability of the optical semiconductor device 70 is improved.

  Further, in the case where the light receiving sensitivity of the semiconductor light receiving element 41 is constant, the driving current of the semiconductor light emitting element 39 can be reduced.

  In the embodiment described above, the case where the optical semiconductor device 10 is assembled after the sheet-like bases 50 and 51 are divided to form the first housing 21 and the second housing 28 has been described. The semiconductor light emitting device 39, the semiconductor light receiving device 41, and the switching devices 42a and 42b are placed on the bases 50 and 51 and sealed with the first and second resins 44 and 45, and then the sheet base 50, The optical semiconductor device 10 may be obtained after the 51 is fixed and separated into individual pieces.

  Moreover, although the case where the 1st thru | or 4th external terminal 17, 18, 19, 20 was formed by plating was demonstrated, you may use printing methods, such as an electrically conductive paste.

  Furthermore, although the case where the first base 12 and the second base 23 are insulators has been described, a part or all of the first base 12 and the second base 23 may be conductors.

  In that case, it is necessary to insulate the electrode lead, the external connection terminal, and the connection portion from the conductive base, respectively, but the heat dissipation of the semiconductor light emitting element 39, the semiconductor light receiving element 41, the switching elements 42a, 42b, etc. is improved. There are advantages.

Furthermore, although the case where the first concave portion 11 and the second concave portions 22 and 73 are filled with a translucent resin has been described, a predetermined optical coupling efficiency is obtained between the semiconductor light emitting element 39 and the semiconductor light receiving element 41, As long as the mechanical strength of the bonding wires 40 and 43 can be maintained, the first and second sealing resins 44 and 45 may be omitted.
In that case, it is desirable to fill the first recess 11 and the second recesses 22 and 73 with a dry inert gas.

1A and 1B are diagrams illustrating an optical semiconductor device according to a first embodiment of the present invention, in which FIG. 1A is a plan view seen through the inside, and FIG. 1B is a line AA in FIG. Sectional drawing cut | disconnected along and looked at the direction of the arrow. 1 is a plan view showing a substrate on which a first housing of an optical semiconductor device according to Embodiment 1 of the present invention is formed in a lump. FIG. The figure which shows the principal part of the manufacturing process of the 1st housing | casing which concerns on Example 1 of this invention. 1 is a plan view showing a substrate on which a second housing of an optical semiconductor device according to Embodiment 1 of the present invention is formed in a lump. FIG. The figure which shows the principal part of the manufacturing process of the 2nd housing | casing which concerns on Example 1 of this invention. Sectional drawing which shows the isolation | separation process of the 1st and 2nd housing | casing from the board | substrate which concerns on Example 1 of this invention. Sectional drawing which shows the assembly process of the optical semiconductor device which concerns on Example 1 of this invention in order. 8A and 8B are diagrams illustrating an optical semiconductor device according to a second embodiment of the present invention, in which FIG. 8A is a plan view seen through the inside, and FIG. 8B is a line BB in FIG. Sectional drawing cut | disconnected along and looked at the direction of the arrow. FIG. 6 is an external view showing another optical semiconductor device according to Embodiment 2 of the present invention. 10A and 10B are diagrams showing an optical semiconductor device according to Example 3 of the present invention, in which FIG. 10A is a plan view seen through the inside, and FIG. 10B is a CC line in FIG. Sectional drawing cut | disconnected along and looked at the direction of the arrow. The top view which shows the board | substrate with which the 1st housing | casing of the optical semiconductor device which concerns on Example 3 of this invention was formed collectively. The figure which shows the principal part of the manufacturing process of the 1st housing | casing which concerns on Example 3 of this invention. The top view which shows the board | substrate with which the 2nd housing | casing of the optical semiconductor device which concerns on Example 3 of this invention was formed collectively. Sectional drawing which shows the assembly process of the optical semiconductor device which concerns on Example 3 of this invention in order. Sectional drawing which shows the 2nd housing | casing of the optical semiconductor device which concerns on Example 4 of this invention.

Explanation of symbols

10, 60, 70 Optical semiconductor device 11 First recess 12 First base 13 First pad 14 Second pad 15 First electrode leads 15a, 26a, 26b, 27a Mount bed 16 Second electrode lead 17 First external terminal 18 2nd external terminal 19 3rd external terminal 20 4th external terminal 21 1st housing 22, 73 2nd recessed part 23 2nd base 24 3rd pad 25 4th pad 26, 71 3rd electrode lead 27, 72 4th electrode Lead 28, 75 Second housing 29, 30, 31, 32, 37, 38 Connection part 33, 34, 35, 36 Substrate 34a, 36a Through hole 39 Optical semiconductor element 40, 43 Bonding wire 41 Semiconductor light receiving element 42a, 42b Switching Element 44 First sealing resin 45 Second sealing resin 46, 56 Adhesives 50, 51, 78, 79 Sheet-shaped base 52 Dicing blade 3 Au ball 55 dispenser 57 hot plate 58 vacuum chucks 80 light reflective film

Claims (5)

A first housing having a first recess, and a semiconductor light emitting element placed on the bottom surface of the first recess;
A second housing having a second recess, and a semiconductor light receiving element placed on the bottom surface of the second recess;
With
The optical semiconductor device, wherein the second housing is fixed to the first housing so that the semiconductor light emitting element and the semiconductor light receiving element face each other. A first housing having a first recess, wherein the semiconductor light emitting element and the semiconductor light receiving element are juxtaposed on the bottom surface of the first recess;
A second housing having a second recess and having a light reflecting surface formed in the second recess;
With
The second casing is fixed to the first casing such that the semiconductor light emitting element and the semiconductor light receiving element are opposed to the light reflecting surface of the second recess. Optical semiconductor device.   3. The electrode terminal for electrically connecting the semiconductor light emitting element and the semiconductor light receiving element to the outside is provided on one side surface of the first housing. 4. Optical semiconductor device.   3. The optical semiconductor device according to claim 2, wherein a metal film of aluminum, gold, or silver is formed on the light reflecting surface of the second recess.   An electrode terminal for electrically connecting the semiconductor light emitting element to the outside is provided on one side surface of the first housing, and the side surface of the second housing facing the one side surface of the first housing. The optical semiconductor device according to claim 1, further comprising an electrode terminal for electrically connecting the semiconductor light receiving element to the outside.

Images