JP2007109818A - Solid-state imaging device, manufacturing method thereof, and electronic information device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress defects in a light receiving part of a solid-state imaging device and reduce white scratches on an imaging screen.
Solid-state imaging in which an N-type impurity diffusion region is formed in a P-type region on a semiconductor substrate, and a photodiode portion (light-receiving portion) is formed by a PN junction between the P-type region and the N-type impurity diffusion region. In the apparatus, at the time of ion implantation of the N-type impurity diffusion region 3A constituting the photodiode portion 4 which is a light receiving portion, arsenic (As) having an atomic radius close to that of silicon (Si) is used at a shallow location near the substrate surface. Uses phosphorus (P), which has a mass close to that of silicon (Si).
[Selection] Figure 1

Description

  In the present invention, an N-type impurity diffusion region is formed in a P-type region on a semiconductor substrate, and a photodiode portion (light-receiving portion) is formed by a PN junction between the P-type region and the N-type impurity diffusion region. Apparatus and manufacturing method thereof, and a digital camera such as a digital video camera and a digital still camera using the solid-state imaging device as an imaging unit, and an image input device such as an image input camera, a scanner, a facsimile, and a camera-equipped mobile phone device. Related to electronic information equipment.

  In this type of conventional solid-state imaging device, incident light (subject light) is irradiated onto a photodiode portion (light receiving portion) and photoelectrically converted into signal charges, and the photoelectrically converted signal charges are applied to the voltage to the readout gate electrode. A captured image signal can be obtained by reading out to the charge detection unit side under control and obtaining a potential corresponding to the read signal charge.

  FIG. 2 is a longitudinal sectional view showing a configuration example of a light receiving unit in a conventional general solid-state imaging device.

In FIG. 2, the light receiving portion of a conventional general solid-state imaging device has a P-type semiconductor substrate or an N-type impurity diffusion region 3 formed in a P-type impurity diffusion region 2 on the semiconductor substrate. Alternatively, the photodiode portion 4 (light receiving portion) is formed by a PN junction between the P-type impurity diffusion region 2 and the N-type impurity diffusion region 3. A surface P ⁺ region 5 is formed near the substrate surface on the photodiode portion 4 in order to prevent surface depletion. FIG. 3 shows a conventional solid-state imaging device using the photodiode unit 4 (light receiving unit).

  FIG. 3 is a longitudinal sectional view showing an example of a configuration of a main part of a conventional solid-state imaging device.

In FIG. 3, the conventional solid-state imaging device 20 has a P-type impurity diffusion region 2 (P-type well region) formed on an N-type silicon substrate 1, and N-type (N +) impurity diffusion in the P-type well region 2. Region 3 is formed. The PN junction between the P-type well region 2 and the N-type impurity diffusion region 3 forms a photodiode portion 4 that functions as a light-receiving portion that photoelectrically converts incident light into signal charges. A surface P ⁺ region 5 is formed near the substrate surface on the photodiode portion 4 in order to prevent surface depletion.

On the side adjacent to the photodiode unit 4 (left side), a vertical transfer unit 6 composed of an N-type (N ⁺ ) region is used to read out signal charges accumulated in the photodiode unit 4 and transfer them to a detection unit (not shown). And a P-type (P ⁺ ) region 7 is provided thereunder. Further, in order to separate the photodiode unit 4 and the vertical transfer unit 6 from the photodiode unit 4 and the vertical transfer unit 6 of the pixel unit adjacent in the left-right direction, a channel stop unit 8 composed of a P-type (P ⁺ ) region is used. Is provided.

On the other hand, an oxide film 9 made of SiO ₂ is covered on the entire surface of the substrate portion. A gate electrode 10 made of polysilicon is disposed on the oxide film 9 via a SiN film 11 and an SiO ₂ film 12 in order to apply a vertical transfer signal.

  Here, in the method for manufacturing the solid-state imaging device 20, the N-type impurity diffusion region 3 is formed by ion-implanting phosphorus (P) into the P-type well region 2.

  However, in this method, since the atomic radius of phosphorus (P) is larger than the atomic radius of silicon (Si), which is a constituent element of the semiconductor, defects are generated due to damage caused by ion implantation, and dark current is generated from that portion. There is a problem that white scratches are likely to occur on the imaging screen.

As means for solving this problem, for example, in Patent Document 1, in order to form the N-type impurity diffusion region 3, arsenic (As) alone having an atomic radius closer to that of silicon (Si) than phosphorus (P) is ion-implanted. A method has been proposed.
JP 2004-47985 A

  However, the conventional method for manufacturing a solid-state imaging device disclosed in Patent Document 1 has the following problems.

  When arsenic (As) alone is ion-implanted with a high implantation energy of 1000 KeV or more into a region to be the photodiode portion 4 (light receiving portion), the lattice defect is caused because the mass of arsenic (As) is larger than that of silicon (Si). It occurs in the photodiode portion 4 (light receiving portion), and causes white scratches on the imaging screen.

  The present invention solves the above-described conventional problems. A solid-state imaging device capable of suppressing lattice defects in a photodiode portion (light-receiving portion) and reducing white flaws on an imaging screen, a manufacturing method thereof, and the solid-state imaging device are used. The purpose is to provide electronic information devices that have been used.

  In the solid-state imaging device of the present invention, one conductive type semiconductor substrate or the other conductive type region is formed in one conductive type region on the upper side of the semiconductor substrate, and is incident by a PN junction between the one conductive type region and the other conductive type region. In a solid-state imaging device in which a photodiode unit that functions as a light receiving unit that photoelectrically converts light into signal charge is formed for each pixel, the other conductivity type region has different ion species so as to suppress lattice defects due to ion implantation. Is formed by at least two ion implantations, whereby the above object is achieved.

  Preferably, in the solid-state imaging device according to the present invention, the different ion species are selected according to an ion implantation depth from the surface of the semiconductor substrate.

  Further preferably, in the solid-state imaging device of the present invention, among the different ion species, an ion species having a shallow ion implantation depth from the surface of the semiconductor substrate is an ion species having a deeper ion implantation depth. Rather than an ionic species whose atomic radius is closer to that of a semiconductor element.

  Further preferably, in the solid-state imaging device of the present invention, among the different ion species, an ion species having a deep ion implantation depth from the surface of the semiconductor substrate is an ion species having a shallow ion implantation depth. It is an ionic species with less atomic weight.

  Further preferably, in the other conductivity type region in the solid-state imaging device of the present invention, the planar view pattern of the impurity diffusion region having a deeper ion implantation depth from the surface of the semiconductor substrate is an ion from the surface of the semiconductor substrate. The impurity diffusion region having a smaller implantation depth is provided inside the outer periphery of the pattern in plan view.

  Further preferably, in the solid-state imaging device according to the present invention, the implanted ion species of the impurity diffusion region formed so that the ion implantation depth from the surface of the semiconductor substrate is shallow is arsenic (As).

  Further, preferably, in the other conductivity type region in the solid-state imaging device of the present invention, the depth at which the concentration of ion-implanted arsenic (As) peaks is 0.1 μm or more and 2.0 μm or less from the surface of the semiconductor substrate. Is the depth.

  Further preferably, in the solid-state imaging device according to the present invention, the implanted ion species of the impurity diffusion region formed in a deeper ion implantation depth from the surface of the semiconductor substrate is phosphorus (P).

  Further preferably, in the other conductivity type region in the solid-state imaging device of the present invention, the depth at which the concentration of ion-implanted phosphorus (P) peaks is 0.5 μm or more and 3.0 μm or less from the surface of the semiconductor substrate. Is the depth.

  Further preferably, in the solid-state imaging device of the present invention, a surface one conductivity type region is formed on a surface side of the semiconductor substrate on the other conductivity type region.

  Further preferably, in the solid-state imaging device of the present invention, the implanted ion species of the surface one conductivity type region is boron (B).

  Still preferably, in a solid-state imaging device according to the present invention, the semiconductor element in the semiconductor substrate is silicon (Si).

  The manufacturing method of the solid-state imaging device according to the present invention includes forming one conductive type region in one conductive type region on one conductive type semiconductor substrate or the semiconductor substrate, and forming the one conductive type semiconductor substrate or the one conductive type region and the one conductive type region. In a method for manufacturing a solid-state imaging device, including a photodiode portion forming step of forming a photodiode portion that functions as a light receiving portion that photoelectrically converts incident light into a signal charge by a PN junction with the other conductivity type region, In the photodiode part forming step, the other conductivity type region is formed by at least two ion implantations with different ion species so as to suppress lattice defects due to ion implantation, and thereby the above-described object is achieved. The

  Preferably, among the different ion species in the method for manufacturing a solid-state imaging device of the present invention, an ion species having a deeper ion implantation depth as an ion species having a smaller ion implantation depth from the surface of the semiconductor substrate. An ion species having an atomic radius closer to that of the semiconductor element than the species is used.

  Further preferably, among the different ion species in the method for manufacturing a solid-state imaging device of the present invention, an ion species having a shallow ion implantation depth as an ion species having a deep ion implantation depth from the surface of the semiconductor substrate. Use an ionic species with an atomic weight less than the species.

  Further preferably, in the other conductivity type region in the method for manufacturing a solid-state imaging device of the present invention, a pattern in plan view of the impurity diffusion region having a deeper ion implantation depth from the surface of the semiconductor substrate is represented by the surface of the semiconductor substrate. Is formed inside the outer periphery of the pattern in the plan view of the impurity diffusion region having a shallower ion implantation depth.

  Further preferably, in the method of manufacturing a solid-state imaging device according to the present invention, the depth at which the concentration of the ion species having a shallower ion implantation depth from the surface of the semiconductor substrate becomes a peak among the different ion species is a substrate. Ions are implanted so that the depth is 0.1 μm or more and 2.0 μm or less from the surface.

  Further preferably, in the method of manufacturing a solid-state imaging device according to the present invention, the depth at which the concentration of the ion species having a deeper ion implantation depth from the surface of the semiconductor substrate becomes a peak among the different ion species is a substrate. Ions are implanted so that the depth is 0.5 μm or more and 3.0 μm or less from the surface.

  Further preferably, in the method for manufacturing a solid-state imaging device according to the present invention, among the different ion species, an ion species having a shallow ion implantation depth from the surface of the semiconductor substrate is implanted with an energy of 100 KeV to 3000 KeV. Ions are implanted, and an ion species having a deeper ion implantation depth from the surface of the semiconductor substrate is implanted with an implantation energy of 300 KeV or more and 4000 KeV or less.

  Further preferably, in the method of manufacturing a solid-state imaging device according to the present invention, the surface-one-conductivity-type region formation for forming the surface-one-conductivity-type region on the substrate surface side on the other-conductivity-type region after the photodiode portion forming step. It further has a process.

  Furthermore, it is preferable that the method for manufacturing a solid-state imaging device of the present invention further includes a heat treatment step for performing a heat treatment for reducing lattice defects due to the ion implantation after the ion implantation.

  An electronic information device according to the present invention uses the solid-state imaging device according to the present invention for an imaging unit, thereby achieving the object.

  The operation of the present invention will be described below with the above configuration.

  In the present invention, for example, a P-type semiconductor substrate of one conductivity type or a P-type impurity diffusion region of a one-conductivity type region on the upper side of the semiconductor substrate, for example, a P-type region on the semiconductor substrate, An N-type impurity diffusion region is formed, and a photodiode unit that functions as a light-receiving unit that photoelectrically converts incident light into a signal charge by a PN junction between the P-type semiconductor substrate or the P-type impurity diffusion region and the N-type impurity diffusion region. In a solid-state imaging device in which a light receiving portion is formed for each pixel, at least two ion implantations with different ion species are performed on the N-type impurity diffusion region constituting the light receiving portion so as to suppress lattice defects due to ion implantation. Formed by.

  Of the different ion species that are ion-implanted into the region that becomes the N-type impurity diffusion region, the ion species that has a smaller implantation depth from the substrate surface has a higher ion species than the ion species that has a larger implantation depth from the semiconductor substrate surface. An ion species having an atomic radius close to that of a semiconductor element (for example, Si), for example, arsenic (As) is used. As the ion species having a deeper implantation depth from the semiconductor substrate surface, an ion species having a smaller atomic weight than the ion species having a smaller implantation depth from the semiconductor substrate surface, such as phosphorus (P), is used.

  As described above, by using the ion species for forming the N-type impurity diffusion region depending on the peak depth of the ion-implanted concentration, white scratches corresponding to lattice defects in the photodiode portion (light receiving portion) are reduced. It becomes possible to do.

  The N-type impurity diffusion region has an impurity diffusion pattern in which a planar view pattern of an impurity diffusion region formed in a deeper depth from the substrate surface is formed in a shallower depth from the substrate surface for pixel separation. It forms so that it may not protrude outside the outer periphery of the planar view pattern of an area | region.

Furthermore, depletion of the surface can be prevented by forming a surface one conductivity type region (surface P ⁺ region) by ion implantation of, for example, boron (B) on the substrate surface side on the N-type impurity diffusion region. It becomes.

  Furthermore, if heat treatment (annealing) is performed after ion implantation, defects due to ion implantation can be further reduced.

  As described above, according to the present invention, for example, an N-type impurity diffusion region as the other conductivity type region is formed in the P-type semiconductor substrate or the P-type impurity diffusion region as the one conductivity type region, and the P-type impurity diffusion is formed. In a solid-state imaging device in which a photodiode portion (light-receiving portion) is formed by a PN junction between a region and an N-type impurity diffusion region, an N-type impurity diffusion region constituting the photodiode portion (light-receiving portion) is a lattice defect caused by ion implantation. In order to suppress the defects in the photodiode part (light receiving part), it is formed by at least two ion implantations with different ion species, and the ion species is selectively used according to the peak depth of the concentration of the ion implantation. Thus, white scratches on the imaging screen can be reduced.

  Hereinafter, embodiments of a solid-state imaging device and a manufacturing method thereof according to the present invention will be described in detail with reference to the drawings.

  FIG. 1 is a longitudinal cross-sectional view illustrating an exemplary configuration of a main part of a solid-state imaging device according to an embodiment of the present invention.

  In FIG. 1, a solid-state imaging device 20A of the present embodiment has a P-type impurity diffusion region (P-type well region) 2 as one conductivity type region formed on the other conductivity type (N-type) silicon substrate 1, and this In the P-type well region 2, an N-type (N +) impurity diffusion region 3A is formed as the other conductivity type region formed by two ion implantations with different ion species so as to suppress lattice defects due to ion implantation. Has been. By the PN junction between the P-type well region 2 and the N-type impurity diffusion region 3A, a photodiode portion 4A that functions as a light receiving portion that photoelectrically converts incident light into signal charges is formed for each pixel. This different ion species is selected depending on the ion implantation depth from the surface of the N-type silicon substrate 1.

In this embodiment, the N-type impurity diffusion region 3A constituting the photodiode portion 4A includes an N-type impurity diffusion region 3a having a shallower depth from the substrate surface and an N-type impurity region having a deeper depth from the substrate surface. It consists of two regions above and below the impurity diffusion region 3b. In the vicinity of the substrate surface (substrate surface side) on the photodiode portion 4A, a surface P ⁺ region 5 as a surface one conductivity type region is formed in order to prevent depletion of the surface.

A vertical transfer unit composed of an N-type (N ⁺ ) region is provided on the side (left side) adjacent to the photodiode unit 4A in order to read out the signal charges accumulated in the photodiode unit 4A and transfer them to a signal detection unit (not shown). 6 is provided, and a P-type (P ⁺ ) region 7 is provided thereunder. Further, in order to separate the photodiode unit 4A and the vertical transfer unit 6 from the photodiode unit 4A and the vertical transfer unit 6 of the pixel unit adjacent in the left-right direction, a channel stop unit 8 composed of a P-type (P ⁺ ) region. Is provided.

  The upper and lower N-type impurity diffusion regions 3a and 3b have a plan view pattern of the N-type impurity diffusion region 3b formed deeper from the surface of the N-type silicon substrate 1 for pixel separation. The N-type impurity diffusion region 3a formed in a shallower depth from the surface of the substrate 1 is formed so as not to protrude outside the outer periphery of the plan view pattern (formed within the outer periphery).

On the other hand, the entire surface of the substrate is covered with an oxide film 9 made of SiO ₂ , and a gate electrode 10 made of polysilicon is formed on the oxide film 9 to apply a vertical transfer signal to an SiN film 11 and further an SiO ₂ film. 12 is arranged.

  Here, a manufacturing method of the solid-state imaging device 20A of the present embodiment will be described. Except for the step of forming the N-type impurity diffusion region 3A, the manufacturing method is the same as that of the conventional solid-state imaging device 20. Therefore, the description thereof is omitted here and the step of forming the N-type impurity diffusion region 3A is described.

  In the present embodiment, in order to form the N-type impurity diffusion region 3a having a shallower depth from the substrate surface, arsenic (As) is applied at a shallow position up to 2.0 μm from the substrate surface side to 100 KeV or more and 3000 KeV or less. Ions are implanted with implantation energy.

  The atomic radius of the silicon (Si) crystal constituting the substrate is 1.18 angstroms, and the atomic radius of arsenic (As) 1.20 angstroms is more silicon (Si) than the atomic radius 1.10 angstroms of phosphorus (P). ) Near the atomic radius. Thus, lattice defects caused by ion implantation can be suppressed by implanting arsenic (As).

  Thus, in the region that becomes the N-type impurity diffusion region 3a, among the different ion species, as the ion species having a shallower ion implantation depth from the surface of the N-type silicon substrate 1 (here, As), the ion implantation depth is used. An ion species having an atomic radius closer to that of the semiconductor element (Si) than the deeper ion species (here, P) is ion-implanted.

  Next, in order to form the N-type impurity diffusion region 3b having a deeper depth from the substrate surface, phosphorus (P) is implanted at a deep position of 0.5 μm or more from the substrate surface with an implantation energy of 300 KeV or more and 4000 KeV or less. Ion implantation.

  Although the atomic radii of silicon (Si) and arsenic (As) are close, but the mass of arsenic (As) is heavier than that of silicon (Si), arsenic (As) is placed at a deep position on the substrate with high energy of 1 MeV or more. Implantation causes defects due to damage during ion implantation. Compared to the atomic weight 75 of arsenic (As), the atomic weight 31 of phosphorus (P) is closer to the atomic weight 28 of silicon (Si) constituting the substrate. Thus, defects can be suppressed by ion implantation of phosphorus (P) when forming the N-type impurity diffusion region 3A having a deeper depth from the substrate surface.

  Thus, in the region that becomes the N-type impurity diffusion region 3b, among the different ion species, as the ion species (P) having a deeper ion implantation depth from the surface of the N-type silicon substrate 1, the ion implantation depth is larger. An ion species having an atomic weight smaller than that of the shallower ion species (As) is ion-implanted.

Thereafter, a surface P ⁺ region 5 is formed on the surface side of the N-type silicon substrate 1 on the N-type impurity diffusion region 3a. In this case, the implanted ion species is boron (B). In this manner, boron (B) is ion-implanted near the substrate surface from the N-type impurity diffusion region 3A to form the surface P ⁺ region 5, thereby preventing surface depletion.

  Further, after the ion implantation process, a heat treatment (annealing) for reducing lattice defects due to the ion implantation is performed. This heat treatment step is performed once or more after the pixel portion is formed by a plurality of ion implantations.

  As described above, according to the present embodiment, at the time of ion implantation for forming the N-type impurity diffusion region 3A constituting the photodiode portion 4A, arsenic (As) is shallow from the substrate surface and deep from the substrate surface. By using phosphorus (P) and properly using ion species, defects in the light receiving portion can be suppressed. Thereby, white scratches on the imaging screen can be reduced.

In this embodiment, the N-type impurity diffusion region 3A is formed in the P-type well region 2 formed above the N-type silicon substrate 1. However, the present invention is not limited to this, and the N-type impurity diffusion region 3A is formed above the P-type silicon substrate 1. A type impurity diffusion region 3A may be formed. Further, the surface P ⁺ region 5 formed near the substrate surface may be omitted. In short, the present invention is applicable to all solid-state imaging devices in which the N-type impurity diffusion region 3A is formed on the P-type region and the photodiode portion 4A is formed by these PN junctions. Further, the P type and the N type may be reversed.

  That is, the one conductivity type semiconductor substrate or the other conductivity type region is formed in one conductivity type region on the top of the semiconductor substrate, and incident light is photoelectrically converted into a signal charge by a PN junction between the one conductivity type region and the other conductivity type region. If the photodiode unit 4A functioning as a light receiving unit is a solid-state imaging device formed for each pixel, the N-type impurity diffusion region 3A of the present invention can be applied.

  Although not specifically described in the above embodiment, a digital camera such as a digital video camera or a digital still camera using the solid-state imaging device 20A of the above embodiment as an imaging unit, an image input camera, a scanner, a facsimile, An electronic information apparatus having an image input device such as a camera-equipped mobile phone device will be described. The electronic information device of the present invention is a memory such as a recording medium for recording data after performing predetermined signal processing for high-quality image data obtained by using the solid-state imaging device 20A of the above-described embodiment of the present invention as an imaging unit. A display means such as a liquid crystal display device for displaying the image data on a display screen such as a liquid crystal display screen after the image data is subjected to predetermined signal processing for display; and after the image data is subjected to predetermined signal processing for communication It has at least one of communication means such as a transmission / reception device for performing communication processing and image output means for printing (printing) and outputting (printing out) the image data.

  As mentioned above, although this invention has been illustrated using preferable embodiment of this invention, this invention should not be limited and limited to this embodiment. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  In the present invention, an N-type impurity diffusion region is formed in a P-type region on a semiconductor substrate, and a photodiode portion (light-receiving portion) is formed by a PN junction between the P-type region and the N-type impurity diffusion region. Apparatus and manufacturing method thereof, and a digital camera such as a digital video camera and a digital still camera using the solid-state imaging device as an imaging unit, and an image input device such as an image input camera, a scanner, a facsimile, and a camera-equipped mobile phone device. In the field of electronic information equipment, an N-type impurity diffusion region that constitutes a photodiode portion (light receiving portion) is formed by at least two ion implantations using different ion species, and ions are ionized depending on the peak depth of the ion-implanted concentration. By properly using the seeds, defects in the photodiode part (light receiving part) are suppressed, and the imaging screen is displayed. It is possible to reduce the definitive white flaws.

It is a longitudinal cross-sectional view which shows the principal part structural example of the solid-state imaging device which concerns on embodiment of this invention. It is a longitudinal cross-sectional view which shows the structural example of the photodiode part (light-receiving part) in the conventional general solid-state imaging device. It is a longitudinal cross-sectional view which shows the example of a principal part structure of the conventional solid-state imaging device.

Explanation of symbols

1 N-type silicon substrate 2 P-type well region 3A N-type impurity diffusion region 3a N-type impurity diffusion region with a shallow depth from the substrate surface 3b N-type impurity diffusion region with a deep depth from the substrate surface 4A Photodiode section (light reception) Part)
5 surface ^{P +} region consisting of 6 vertical transfer unit 7 vertical transfer P-type region 8 channel stop portion 9 SiO ₂ men oxide film 10 transfer gate electrode 11 SiN film 12 SiO ₂ film 20A solid state imaging device

Claims (22)

One conductivity type semiconductor substrate or the other conductivity type region is formed in one conductivity type region on the semiconductor substrate, and incident light is photoelectrically converted into signal charges by a PN junction between the one conductivity type region and the other conductivity type region. In a solid-state imaging device in which a photodiode portion that functions as a light receiving portion is formed for each pixel,
A solid-state imaging device in which the other conductivity type region is formed by at least two ion implantations with different ion species so as to suppress lattice defects caused by ion implantation.   The solid-state imaging device according to claim 1, wherein the different ion species are selected according to an ion implantation depth from a surface of the semiconductor substrate.   Among the different ion species, an ion species having a shallow ion implantation depth from the surface of the semiconductor substrate is an ion species having an atomic radius closer to the semiconductor element than an ion species having a deep ion implantation depth. The solid-state imaging device according to claim 2.   3. The ion species having a deeper ion implantation depth from the surface of the semiconductor substrate among the different ion species is an ion species having a smaller atomic weight than an ion species having a smaller ion implantation depth. 3. The solid-state imaging device according to 3.   In the other conductivity type region, the plan view pattern of the impurity diffusion region with the deeper ion implantation depth from the surface of the semiconductor substrate is the pattern of the impurity diffusion region with the shallower ion implantation depth from the surface of the semiconductor substrate. The solid-state imaging device according to claim 2, wherein the solid-state imaging device is provided inside the outer periphery of the planar view pattern.   3. The solid-state imaging device according to claim 2, wherein an implanted ion species of an impurity diffusion region formed so that an ion implantation depth from a surface of the semiconductor substrate is shallower is arsenic (As).   6. The solid according to claim 5, wherein in the other conductivity type region, the depth at which the concentration of ion-implanted arsenic (As) reaches a peak is a depth of 0.1 μm or more and 2.0 μm or less from the surface of the semiconductor substrate. Imaging device.   The solid-state imaging device according to claim 2 or 6, wherein an implanted ion species of an impurity diffusion region formed in a deeper ion implantation depth from the surface of the semiconductor substrate is phosphorus (P).   9. The solid according to claim 8, wherein in the other conductivity type region, the depth at which the concentration of ion-implanted phosphorus (P) reaches a peak is a depth of 0.5 μm to 3.0 μm from the surface of the semiconductor substrate. Imaging device.   The solid-state imaging device according to claim 1, wherein a surface one conductivity type region is formed on a surface side of the semiconductor substrate on the other conductivity type region.   The solid-state imaging device according to claim 10, wherein an implanted ion species of the one surface conductivity type region is boron (B).   The solid-state imaging device according to claim 1, wherein the semiconductor element in the semiconductor substrate is silicon (Si). One conductive type semiconductor substrate or the other conductive type region is formed in one conductive type region on the semiconductor substrate, and the one conductive type semiconductor substrate or the one conductive type region and the other conductive type region are incident by a PN junction. In a method for manufacturing a solid-state imaging device having a photodiode part forming step of forming a photodiode part that functions as a light receiving part that photoelectrically converts light into a signal charge for each pixel,
The method for forming a solid-state imaging device, wherein the photodiode part forming step forms the other conductivity type region by at least two ion implantations using different ion species so as to suppress lattice defects due to ion implantation.   Among the different ion species, as an ion species having a shallow ion implantation depth from the surface of the semiconductor substrate, an ion species having an atomic radius closer to the semiconductor element than an ion species having a deep ion implantation depth. The manufacturing method of the solid-state imaging device according to claim 13 to be used.   The ion species having a smaller atomic weight than the ion species having a smaller ion implantation depth is used as the ion species having a larger ion implantation depth from the surface of the semiconductor substrate among the different ion species. The manufacturing method of the solid-state imaging device of description.   In the other conductivity type region, a plan view pattern of the impurity diffusion region having a larger ion implantation depth from the surface of the semiconductor substrate is shown in a plan view pattern of the impurity diffusion region having a smaller ion implantation depth from the surface of the semiconductor substrate. The manufacturing method of the solid-state imaging device according to claim 13, wherein the solid-state imaging device is formed on the inner side of the outer periphery of the plan view pattern.   Among the different ion species, the depth at which the concentration of the ion species having the shallower ion implantation depth from the surface of the semiconductor substrate reaches a peak is 0.1 μm or more and 2.0 μm or less from the substrate surface. The method for manufacturing a solid-state imaging device according to claim 13, wherein ion implantation is performed.   Among the different ion species, the depth at which the concentration of the ion species having a deeper ion implantation depth from the surface of the semiconductor substrate reaches a peak is a depth of 0.5 μm or more and 3.0 μm or less from the substrate surface. The method for manufacturing a solid-state imaging device according to claim 13, wherein ion implantation is performed. Among the different ion species, an ion species having a shallow ion implantation depth from the surface of the semiconductor substrate is implanted with an implantation energy of 100 KeV or more and 3000 KeV or less,
19. The method of manufacturing a solid-state imaging device according to claim 17, wherein an ion species having a deeper ion implantation depth from the surface of the semiconductor substrate is ion-implanted with an implantation energy of 300 KeV or more and 4000 KeV or less.   14. The method of manufacturing a solid-state imaging device according to claim 13, further comprising a surface one conductivity type region forming step of forming a surface one conductivity type region on a substrate surface side on the other conductivity type region after the photodiode part forming step. .   The method for manufacturing a solid-state imaging device according to claim 13, further comprising a heat treatment step of performing a heat treatment for reducing lattice defects due to the ion implantation after the ion implantation.   An electronic information device using the solid-state imaging device according to claim 1 for an imaging unit.

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