JP2007194480A - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform depositing to a wafer beforehand without adding an excessive process, taking into account the deviance from the ideal planarization condition after a planarization process such as chemical mechanical polishing etc of the wafer. <P>SOLUTION: The chemical mechanical polishing is performed at step S120 using a dummy wafer. At step S130, the amount of polishing is measured by each measuring point within the dummy wafer plane, and the polishing characteristics is grasped by finding the deviance from the ideal planarization condition. At step S140, responding to the deviation from the ideal planarization condition, so as to attain the planarization after actual polish, for example, an ideal dimensional standard is assumed such as depositing thickly beforehand the part where the film thickness becomes thin. At step S150, in conformity to the assumed ideal dimensional standard, the optimization of the constraint factor in depositing is attained, at step S160 depositing is carried out on an actual product wafer, after that at step S170, the chemical mechanical polishing is carried out. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a manufacturing technique of a semiconductor device, and in particular, a portion where the film thickness becomes thin after chemical mechanical polishing or the like is formed in advance from the film formation stage so that the film thickness is flattened after chemical mechanical polishing or the like. This technology is effective when applied.

  The technology described below has been studied by the present inventors in researching and completing the present invention, and the outline thereof is as follows.

  In the semiconductor device manufacturing technique, a planarization technique by chemical mechanical polishing (CMP) is used when the wafer surface is planarized. It is often used in a multilayer wiring process such as an element isolation process and a damascene process, or a planarization process of an interlayer insulating film.

For example, in Patent Document 1, when polishing is performed by chemical mechanical polishing using a polishing cloth having high hardness, the outer peripheral portion of the polishing surface of the wafer is more convex than the central portion, and the polishing rate is reduced. A technique for polishing without any problems is disclosed.
JP 2003-273051 A

  However, the present inventor has found that the conventional chemical mechanical polishing techniques have the following problems.

  At present, a chemical mechanical polishing technique is introduced as a technique for solving the depth of focus problem related to the unevenness of the wafer surface, which occurs with the miniaturization of product patterns, multilayering of wiring, and the like. However, with this chemical mechanical polishing technique, it is not possible to set a polishing time for each wafer for a lot. For this reason, the film formation state that is a pre-process of chemical mechanical polishing, for example, the situation in which the variation in the film thickness within the wafer surface such as a P-TEOS (plasma-tetraethyl orthosilicate) film cannot be uniformly converged. It is.

  As a measure for converging such in-plane film thickness variation, the film thickness variation for each wafer is measured, and lot division is performed for each wafer having the same tendency in the measured film thickness variation. There has been proposed a method of performing polishing again by setting a polishing time corresponding to the variation. However, in such a handling method, the labor for dividing the lot for each wafer increases, so that the work efficiency is remarkably deteriorated.

  Although the above-mentioned decrease in work efficiency is attempted to be prevented by operational measures such as implementation of additional polishing, review of standards, change of the number of preceding sheets, etc., the current situation has not yet reached a fundamental solution.

  Regarding the variation in the film thickness within the wafer surface, the pad and the wafer are both rotated, which is considered to be caused by the difference in angular velocity between the wafer central portion and the wafer outer peripheral portion. In addition, since the slurry used as an abrasive is also flowed on the pad, a large amount flows into the peripheral portion of the wafer. As a result, the polishing rate on the peripheral side of the wafer is increased, and when the film thickness distribution in the wafer surface is measured macroscopically, the peripheral film thickness tends to be thin. Deviation occurs from an ideal flattening situation.

  The point that the peripheral film thickness of the wafer becomes thin is an important problem that should be improved from the viewpoint of the depth of focus. For this improvement, the present inventor should have formed a thicker film thickness, that is, a thicker film than the beginning, at the portion where the film thickness such as the peripheral film thickness is reduced from the beginning at the stage before polishing. Thought.

  In Patent Document 1, when a polishing cloth having high hardness is used, the wafer outer peripheral portion has a convex shape so that the polishing rate can be reduced while maintaining the polishing rate with respect to a decrease in the polishing rate at a thin film thickness. It has been proposed to

  In such a proposal, for example, the mask is left on the outer peripheral side of the wafer, or the mask material is purposely formed on the outer peripheral side of the wafer by etching, or the mask material is replaced with a tape. Is a technique to raise the wafer peripheral side with different materials. In other words, this technique is a technique in which another member is added to the material to be polished on the wafer outer peripheral side, or the material to be polished is formed after the wafer outer peripheral side is formed in a convex shape by another member. is there.

  In addition, a quantitative numerical value is unknown as to how much the peripheral portion side should be increased with respect to what polishing rate, and it is necessary to re-examine that area in the implementation. Further, only the height of the peripheral portion is considered as a problem, and there is no description about application to other than the peripheral portion side such as the central portion side in the wafer surface.

  Although the invention disclosed in Patent Document 1 is certainly an excellent invention, in order to form the outer peripheral portion of the wafer in a convex shape, it is assumed that the convex shape is made using a material different from the material to be polished. Need to form. For this reason, in terms of the process, an extra process is required, which is a technique that is difficult to adopt in terms of process efficiency.

  An object of the present invention is to form a material to be polished on a wafer in advance in consideration of a deviation from an ideal planarization state after a planarization process such as chemical mechanical polishing of a wafer without adding an extra step. Is to do.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  That is, at the time of film formation of the material to be polished, from the beginning, assuming a flattening tendency such as subsequent chemical mechanical polishing, the film thickness is increased from the beginning in accordance with the deviation from the ideal flattening situation, etc. deep.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  In the present invention, since the film forming state of the material to be polished is formed thicker from the beginning, for example, the peripheral part that tends to be thinned by chemical mechanical polishing, the planarization after chemical mechanical polishing is improved. The

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof may be omitted.

  The present invention considers the tendency of chemical mechanical polishing in the subsequent steps in the film forming step, and the film thickness after polishing is intentionally formed in a non-uniform manner according to the polishing tendency. The thickness is flattened. In other words, considering the deviation from the ideal flattening state of the film thickness within the wafer surface after polishing, the film thickness is made uneven according to the deviation so that the deviation from the ideal flattening state can be eliminated by polishing in advance. It is to be formed.

  In the film formation process, the film thickness is made non-uniform by appropriately changing the film formation conditions within the wafer surface. For the search of the film formation control factor and the optimization of the control factor upon the change, for example, Adopt Taguchi method to make it more efficient.

  It is not always necessary to use Taguchi method when narrowing down and optimizing the control factors in film formation. For example, it is possible to narrow down the control factors and optimize the conditions that are likely to become control factors during film formation. Needless to say, the process may be performed.

  In the following description, a case where chemical mechanical polishing is performed will be described as an example. However, the application of the present invention is not limited to chemical mechanical polishing, and the material to be polished after film formation is removed by etching or the like. This technique can be widely applied to flattening.

  In the chemical mechanical polishing, the polishing of the material to be polished formed on the wafer surface can be more easily polished on the wafer peripheral side than the wafer center side from the macro viewpoint. It was revealed by. That is, as a result of the chemical mechanical polishing, it was found that the wafer peripheral side tends to be thinner than the wafer center side with respect to the ideal planarization state as shown in FIG. Even if the film forming accuracy of the material to be polished before polishing is increased and the uniformity of the film thickness is accurately controlled, such a polishing tendency can be confirmed.

  This polishing tendency is attributed to the fact that the polishing rate on the wafer peripheral side becomes larger than that on the wafer center side. In addition, it was found that the tendency of the slurry of the abrasive used in the chemical mechanical polishing to become stronger by flowing to the wafer peripheral side. As a result, overcutting occurs on the wafer peripheral side, and when viewed as a whole, as shown in FIG. 1A, the peripheral side of the wafer W becomes lower than the wafer center side, and the flatness after polishing is improved. It gets worse.

  The tendency that the wafer peripheral side becomes lower than the wafer center side side has a great influence on the depth of focus at the time of exposure within the wafer surface, for example. As shown in FIG. 1A, when the unevenness difference between the peripheral part and the central part is more than a certain level, the allowable depth of focus becomes small and the resolution of the pattern is lowered. As a result, the reliability of the exposure process is lowered, and the yield after the exposure process is lowered.

Therefore, the present inventor believes that the flatness after polishing may be improved by forming the film thickness of the material to be polished non-uniformly from the beginning in accordance with such a polishing tendency. Thought.
That is, it was considered that it is sufficient to deal with the film formation stage in advance in consideration of the actual post-polishing deviation with respect to the ideal planarization state.

  For example, when chemical mechanical polishing after film formation shows the polishing tendency shown in FIG. 1A, that is, the polishing characteristics, from the beginning, as shown in FIG. The film thickness on the part side is formed locally high. If formed in this way, the film thickness on the peripheral part side formed higher than the central part side and the tendency for the polishing rate on the peripheral part side during chemical mechanical polishing to be increased are mutually offset, As a result, as shown in FIG. 1C, it was thought that the flatness after polishing should be improved.

  In other words, the inventors have come up with the idea of forming a thick film from the beginning by thinly changing the film forming conditions in the film forming process.

  Until now, there was a case where the uniformity of the film thickness was required in the film formation stage, but there was no idea to intentionally form the film thickness unevenly. Even the method described in the above-mentioned Patent Document 1 is a technique in which the film thickness formed in the film formation stage is formed uniformly.

  In the present invention, such a film formation state is made uniform, but it is intentionally formed non-uniformly. Furthermore, in the non-uniform formation, the non-uniformity is offset with the polishing characteristics and is flattened in consideration of the polishing characteristics by chemical mechanical polishing after film formation in advance. For such non-uniform film formation, the control factor of the film thickness at the time of film formation is different from the conventional one, and it is necessary to make it partly different.

  Therefore, in the present invention, Taguchi method is used to narrow down and optimize the control factors in film formation, thereby improving the efficiency. However, without using such Taguchi method, it is possible to narrow down and optimize control factors by, for example, exhausting the conditions that are likely to become control factors during film formation.

  In the following description, for example, a semiconductor device used for driving a hard disk drive is taken as an example, and a case where a TEOS (tetraethyl orthosilicate) film is formed in advance in chemical mechanical polishing in the through-hole contact forming process will be described. .

  As shown in FIG. 2, the semiconductor device 10 is configured to drive a hard disk drive, for example. In the configuration, the semiconductor chip 11 is mounted on the island 12, and the mounted semiconductor chip 11 and the lead 13 are wire-bonded with a wire 14 such as a gold wire. The semiconductor chip 11 and the wire 14 having such a configuration are entirely sealed with a resin 15.

  In the semiconductor device 10 having such a configuration, a through-hole contact is formed in an interlayer insulating film between wirings in order to form a multilayer wiring structure. In forming such a through-hole contact, it is necessary to planarize an interlayer insulating film such as a TEOS film by chemical mechanical polishing. The flattening process by chemical mechanical polishing of the TEOS film which is an interlayer insulating film is shown as a flow chart in FIG.

  As shown in FIG. 3, first, in step S <b> 110, a film is formed on a dummy wafer prior to forming a product wafer. That is, a TEOS film that is an interlayer insulating film is formed on a dummy wafer. When forming the dummy wafer, the same film forming apparatus as that used for forming the product wafer is used. For example, a plasma CVD (chemical vapor deposition) apparatus is used as the film forming apparatus.

  A plasma CVD apparatus 20a as the film forming apparatus 20 is configured as shown in FIG. That is, for example, a wafer storage case such as a FOUP (Front Open Unified Pod) F that has two load lock chambers 21 (21a, 21b) and stores wafers in units of lots is connected to each load lock chamber 21. It is configured so that it can be set.

  The set wafers are taken out from the load lock chamber 21 one by one by the transfer robot 22 provided in the center, and transferred to the chamber 23 (23a, 23b, 23c, 23d). Film treatment is performed. Four chambers 23 are provided, and film formation is performed in each chamber 23 in parallel. The wafers formed in each chamber 23 are sequentially sent to the cooling chamber 24 and then returned to the wafer storage case.

  As shown in FIG. 5, a parallel plate type electrode structure is provided in the chamber 23, and an upper electrode 31 and a lower electrode 32 are configured. The upper electrode 31 is connected to a high frequency power source 33. The upper electrode 31 is configured as a shower head that sends out a film forming gas, and is configured to discharge the film forming gas downward at a predetermined mixing ratio.

  Further, as shown in FIG. 5, the lower electrode 32 includes a cover plate 32a and a heater 34, and the wafer W can be placed on the cover plate 32a. The wafer W placed on the cover plate 32a is heated to a predetermined temperature by a heater 34 provided on the back side thereof. A high frequency is applied between the upper electrode 31 and the lower electrode 32, and plasma is formed in the mixed gas supplied from the upper electrode 31 side configured in the shower head toward the upper surface of the wafer W.

Examples of the supplied mixed gas include TEOS, O ₂ , and He. Further, an exhaust port connected to the dry pump 35 is provided in the chamber 23, and for example, the interior of the chamber 23 can be reduced to a predetermined pressure.

  Using the film forming apparatus 20 having the chamber 23 configured as described above, a TEOS film is formed on the dummy wafer in step S110, and then the dummy wafer after film formation is chemically mechanically polished in step S120. The chemical mechanical polishing apparatus used uses the same apparatus for chemical mechanical polishing a product wafer. Further, the polishing time may be set as appropriate before or after the time for polishing the product wafer according to the polishing state of the dummy wafer.

  The chemical mechanical polishing apparatus 40 is configured, for example, as shown in FIG. That is, the polishing pad 43 is provided on the surface plate 42 that is rotated by the motor 41. The polishing surface of the wafer W provided on the wafer carrier 45 rotated by the motor 44 via the carrier pad 46 is opposed to the surface of the polishing pad 43.

  In addition, a nozzle 47 is provided above the polishing pad 43 so that a required slurry 48 is supplied to the surface of the polishing pad 43. Using the slurry 48 supplied to the surface of the polishing pad 43 in this way, the wafer W is polished while rotating the polishing surfaces of the wafer W arranged facing the polishing pad 43 with respect to each other.

  In step S130, the polishing characteristics are grasped corresponding to the situation in which chemical mechanical polishing is performed in step S120. For grasping the polishing characteristics, for example, as shown in FIG. 7, measurement points are virtually set from 1 to 9 concentrically on the wafer W to be polished. The actual polishing amount is measured at the set nine points. The measured polishing amount is concentrically divided into, for example, four groups according to the environment of the measurement position in the plane.

  That is, a center group consisting of measurement points 1 is provided corresponding to the center position which is the center in the wafer surface. An intermediate group consisting of measurement points 2, 4, 6, and 8 is set from the center position in the wafer surface toward the peripheral side, corresponding to the middle position on the concentric circle in the middle. A peripheral group consisting of measurement points 3, 5, and 7 is set corresponding to the outer position on a concentric circle on the peripheral side in the wafer surface. Finally, an OF unit group consisting of measurement points 9 corresponding to the orientation flat of the wafer is set.

  In this way, the measurement points divided into groups of the central part, the intermediate part, the peripheral part, and the OF part are set, and the average value of the measured polishing amounts is obtained. From the polishing amount, the polishing tendency of the chemical mechanical polishing apparatus 40 when the dummy wafer is polished, that is, the polishing characteristic is grasped. For example, in the chemical mechanical polishing apparatus 40 in step S120, as shown in FIG. 8A, the center portion has a polishing characteristic such that the central portion protrudes from the peripheral portion side with respect to the TEOS film 16a of the interlayer insulating film 16. Is confirmed.

  In the next step S140, an ideal shape at the time of film formation is assumed on the assumption of such polishing characteristics. That is, an ideal shape after film formation is assumed so that planarization after polishing can be realized according to the polishing characteristics in step S130 corresponding to the film formation state in step S110. For each of the four groups, as shown in FIG. 9, the deviation from the average value at the nine measurement points is obtained, and the distribution in the wafer plane is made the ideal shape. The distribution based on the deviation in the wafer plane, that is, the ideal shape is as shown in FIG. 8B and FIG.

  As shown in FIGS. 8B and 10, if the film thickness on the peripheral side of the wafer is higher than the initial film thickness, the film thickness on the peripheral side is high when polishing with the chemical mechanical polishing apparatus 40. And the magnitude of the polishing rate on the peripheral side at the time of chemical mechanical polishing cancels out, and the entire surface is polished flat.

  Here, the degree of the preferable film thickness on the peripheral side may be expressed quantitatively for each polishing characteristic and used as a guide for actual film formation. The ratio of the peripheral part film thickness to the wafer intermediate part film thickness is defined as a V ratio, and the quality of the peripheral part film thickness during film formation can be evaluated using this V ratio as a guide. As shown in FIG. 11, the V ratio can be calculated as a value obtained by dividing the increase in the film thickness at the wafer peripheral portion with respect to the film thickness at the wafer intermediate portion by the film thickness at the wafer intermediate portion.

  In this way, an apparatus for performing actual film formation and polishing of the product wafer is specified, a film is formed on the dummy wafer, and then chemical mechanical polishing is performed to grasp the polishing characteristics, and the polishing characteristics are formed from the polishing characteristics. Assume the ideal shape when filming. Strictly speaking, each chemical mechanical polishing apparatus should have polishing characteristics based on machine differences, and an ideal shape is assumed for each chemical mechanical polishing apparatus. Strictly speaking, when a plurality of polishing tables are juxtaposed in the same chemical mechanical polishing apparatus, an ideal shape should exist for each table.

  However, in consideration of the film forming accuracy for raising the actual peripheral side and the polishing accuracy required for flattening, the V rate can be defined for each film type based on the type of product wafer and evaluated accordingly. It seems to be. There seems to be little need to evaluate by defining the V rate for each table.

  In step S150, when the ideal shape at the time of film formation can be grasped in this way, a control factor for film formation of the ideal shape is selected and optimized. For the selection of the control factor, Taguchi method was used as the method, which can confirm the influence on the film formation state with the minimum number of experiments. Furthermore, the Taguchi method was used for the optimization.

  Based on the selected control factors, Taguchi method L18 orthogonal table capable of 7 factor × 3 level experiments was used. Control factors of seven factors include, for example, chamber pressure, high frequency output, heater temperature, distance between electrodes (see FIG. 5), TEOS gas flow rate, oxygen flow rate, helium flow rate when using plasma CVD. Good.

  In order to optimize such a control factor, a desired height of the film thickness at each measurement point is obtained from the ideal shape and set. For example, in this embodiment, the desired characteristics of the Taguchi method are set for the oxide film which is the interlayer insulating film 16 by setting the central part to 1600 nm, the intermediate part to 1624 nm, the peripheral part to 1686 nm, and the OF (oriental flat) part to 1671 nm. I went there. What is necessary is just to employ | adopt the value from which S / N becomes the maximum with respect to the some numerical value of a control factor as an optimal value.

  For example, the control factor, for example, reduces the pressure in the chamber by about 50% as compared with the case where the film thickness is formed uniformly. At the same time, the high frequency output is increased by about 20%, the heater temperature is increased by about 5%, the distance between electrodes is reduced by about 28%, the flow rate of TEOS gas is reduced by about 10%, and the flow rate of oxygen is reduced by about 8%. In addition, the flow rate of helium was set to about 19% increase for each uniform film thickness formation condition.

  In step S160, the product wafer is actually formed using the same plasma CVD apparatus 20a as that used to actually form the dummy wafer with the optimum value of the control factor obtained in step S150. Thereafter, in step S170, the TEOS film formed in step S160 is polished using the chemical mechanical polishing apparatus 40 whose polishing characteristics have been grasped in step S130. In this way, the TEOS film that is an interlayer insulating film is planarized by chemical mechanical polishing.

  Although seven factors are selected as the control factors as described above, fewer control factors may be set. A part of the L18 orthogonal table employed in the Taguchi method may be handled as a blank. Alternatively, more control factors than seven factors may be selected.

  Until now, it has been a strict command that both the film thickness of a film to be polished such as an interlayer insulating film and the polishing rate by chemical mechanical polishing are uniform within the wafer surface. Therefore, high-precision management has been required for management of film thickness uniformity during film formation, management of polishing rate uniformity during chemical mechanical polishing, and the like. In some cases, there was a case where it was unavoidable to set a limit management standard, and there was a case that a considerable problem occurred in apparatus management.

  However, in the present invention, as described above, it is not necessary to pay attention to the uniformity of the film thickness management during film formation and the uniformity of the polishing rate management during polishing. Flattening after polishing is realized by accepting the current polishing characteristics as they are, and forming an ideal shape with a non-uniform film thickness distribution that assumes the polishing characteristics as an ideal film formation state.

  In the above description, as shown in FIG. 8 (a), the case where the peripheral side has a polishing characteristic that tends to be thinner than the central part has been described as an example. It is possible to effectively treat the characteristics. For example, as shown in FIG. 12, even in the case of polishing characteristics (shown by broken lines in the figure) that tend to be thin on the center side and the peripheral side within the wafer surface, the ideal shape (see FIG. Medium line display) can be formed.

  In addition, in order to suppress the influence of machine difference between apparatuses as much as possible, not only the same apparatus is used, but also a plurality of chambers in the same apparatus are divided into two groups, for example, and a film is formed in half. Is more preferable.

  In the present invention, as described above, for example, the film thickness of the P-TEOS film is formed non-uniformly at the film forming stage. The polishing characteristics by polishing were taken into consideration. Such polishing characteristics may be a complex factor including irregularities when forming a coating oxide film by, for example, SOG (spin on glass) in the process before the P-TEOS film. In the present invention, it is possible to achieve total flatness in consideration of the occurrence of such irregularities. However, for example, in the configuration for maintaining the polishing rate constant as disclosed in Patent Document 1, it is difficult to cope with such a point, and there is no description about the countermeasure for this point.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  In the above embodiment, the case of polishing by chemical mechanical polishing after film formation has been described as an example, but the present invention can be applied to other cases. For example, when dry etching is performed after film formation, when the etching apparatus used for the etching has specific etching characteristics like a chemical mechanical polishing apparatus, for example, the bottoms of a plurality of grooves formed by etching are It can be applied to flattening so as to be aligned at the same level.

  Further, in the present invention, the case where the film thickness is increased by adding the film thickness to the position where the polishing rate is increased by the chemical mechanical polishing has been described, but conversely, the film is difficult to be removed by grasping the polishing characteristics. By forming a thin film from the beginning, the entire film may be formed in a shape having a high peripheral portion or the like.

  Although the case where the peripheral portion is raised has been described in the above-described embodiment, depending on the polishing characteristics, for example, the intermediate portion or the central portion may be formed higher than the peripheral portion.

  In the above embodiment, the example of the semiconductor device for driving the hard disk drive has been described. However, the application of the present invention can be widely applied to planarization of other semiconductor devices in chemical mechanical polishing. Furthermore, the present invention can be applied to the manufacture of electronic parts that may use chemical mechanical polishing widely including liquid crystals.

  The method for manufacturing a semiconductor device according to the present invention can be effectively used for flattening such as chemical mechanical polishing after film formation.

(A) is sectional drawing which shows typically the polishing condition of the film thickness after chemical mechanical polishing, (b) is sectional drawing which shows typically the film-forming condition at the time of applying this invention, (c) is a cross-sectional view schematically showing a case where the film formation state shown in (b) is chemically mechanically polished. It is sectional drawing which shows typically the structure of an example of the semiconductor device of one embodiment of this invention. It is a flowchart which shows an example of the manufacturing method of the semiconductor device of one embodiment of this invention. It is a top view which shows typically the schematic structure of the film-forming apparatus used when manufacturing the semiconductor device of one embodiment of this invention. It is sectional drawing which shows typically the structure in the chamber of the film-forming apparatus used when manufacturing the semiconductor device of one embodiment of this invention. It is a front view which shows typically the structure of the chemical mechanical polishing apparatus used when manufacturing the semiconductor device of one embodiment of this invention. It is a top view which shows typically a mode that the measurement point of a film thickness is set in a wafer surface. (A) is sectional drawing which shows a mode that the grinding | polishing characteristic of the chemical mechanical polishing apparatus was illustrated, (b) is sectional drawing which shows typically the ideal shape of the film-forming state assumed based on it. It is a table | surface which shows the grinding | polishing amount grasped | ascertained for every measurement point, and the deviation from the average value for every measurement point. It is explanatory drawing which shows the condition which contrasted the grinding | polishing characteristic and the ideal shape typically with the curve. It is sectional explanatory drawing which shows typically the definition of V rate used by one embodiment of this invention. It is sectional drawing which shows typically the grinding | polishing characteristic which can apply this invention, and the ideal shape corresponding to it.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor device 11 Semiconductor chip 12 Island 13 Lead 14 Wire 15 Resin 16 Interlayer insulation film 16a TEOS film 20 Film-forming apparatus 20a Plasma CVD apparatus 21 Load lock chamber 21a Load lock chamber 21b Load lock chamber 22 Transfer robot 23 Chamber 23a Chamber 23b Chamber 23c chamber 23d chamber 24 cooling chamber 31 upper electrode 32 lower electrode 32a cover plate 33 high frequency power supply 34 heater 35 dry pump 40 chemical mechanical polishing apparatus 41 motor 42 surface plate 43 polishing pad 44 motor 45 wafer carrier 46 carrier pad 47 nozzle 48 slurry F Hoop W Wafer

Claims (5)

A method for manufacturing a semiconductor device comprising a step of planarizing the material to be polished by removing the material to be polished,
A method for manufacturing a semiconductor device, wherein film formation of the material to be polished is performed in consideration of deviation from an ideal flattening state of a film thickness distribution after removal of the material to be polished. A method for manufacturing a semiconductor device comprising a step of planarizing a material to be polished by chemical mechanical polishing,
A method of manufacturing a semiconductor device, characterized in that a portion where the film thickness becomes thinner than an ideal planarization state after chemical mechanical polishing of the material to be polished is formed in advance by a film forming process. A method for manufacturing a semiconductor device comprising a step of planarizing a material to be polished on a wafer by chemical mechanical polishing,
The method for manufacturing a semiconductor device is characterized in that the material to be polished is formed in advance in accordance with the polishing characteristics of the chemical mechanical polishing with different film forming conditions in the wafer surface in the same film forming process. . A method for manufacturing a semiconductor device comprising a step of planarizing a material to be polished by chemical mechanical polishing,
The method of manufacturing a semiconductor device, wherein the material to be polished is formed in advance in a film forming step so that the film thickness of the portion where the polishing rate becomes faster than the other during the chemical mechanical polishing is formed. A method for manufacturing a semiconductor device comprising a step of planarizing a material to be polished on a wafer by chemical mechanical polishing,
The method of manufacturing a semiconductor device, wherein the material to be polished is formed thick in a film forming step on a wafer peripheral portion side.

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