JP2007019193A - Charged particle beam apparatus, lens power adjustment method, and device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus in which a deflection center of a deflector and an intermediate image of an optical system are accurately matched.
A deflector that deflects a charged particle beam, a lens that converges the charged particle beam, and the charged particle beam in a plane perpendicular to an optical axis at a position conjugate with an intermediate image 103 formed by the lens. Position measuring means 113 for measuring the position of the lens, and lens power adjusting means 114 for adjusting the power of the lens based on the position information of the charged particle beam measured by the position measuring means.
[Selection] Figure 1

Description

  The present invention relates to a charged particle beam exposure apparatus such as an electron beam exposure apparatus or an ion beam exposure apparatus mainly used for exposure of a semiconductor integrated circuit, and an inspection apparatus for inspecting a pattern of a circuit or the like in the process of manufacturing a semiconductor integrated circuit. Is.

  A plurality of electron beams are irradiated onto the substrate to be exposed, the plurality of electron beams are deflected to scan the substrate, and the plurality of electron beams are individually turned on / off according to the pattern to be drawn to draw the pattern. A multi-beam type electron beam exposure apparatus is disclosed in, for example, Japanese Patent Laid-Open No. 9-330870 (Patent Document 1).

  In this example, it is required to match the deflection center of the blanking deflector with the position of the intermediate image of the optical system.

  A scanning electron microscope that inspects a pattern of a circuit or the like on a wafer using an electron beam is disclosed in, for example, Japanese Patent Application Laid-Open No. 2004-31976 (Patent Document 2).

Also in this example, it is required to match the deflection center of the blanking deflector with the position of the electron beam crossover.
JP-A-9-330870 Japanese Patent Laid-Open No. 2004-31976

  However, it is difficult to accurately match the deflection center of the deflector with the intermediate image (crossover image) of the optical system because the deflection center of the deflector cannot be accurately grasped. In the case of the electron beam exposure apparatus, unless the deflection center of the deflector and the intermediate image are accurately aligned, the deflection center of the deflector and the wafer or sample surface are not in a positional relationship conjugate to the optical system. Therefore, the image of the electron beam moves on the wafer or the sample surface, and as a result, the electron beam is blurred. In the case of a scanning electron microscope, the irradiation position of the electron beam on the sample changes during blanking, and the area adjacent to the irradiation area is charged.

  To avoid moving the electron beam image on the wafer or sample surface, it is possible to correct the stage by moving the stage up and down in the optical axis direction, but optically correct the electromagnetic lens, electrostatic lens, or deflector. It becomes necessary, and complicated procedures increase.

  An object of the present invention is to provide a charged particle beam apparatus that has no unintended irradiation position change, can avoid charging an area adjacent to the irradiation area, and has good drawing performance such as pattern dimension accuracy. It is.

  In order to achieve the above object, a charged particle beam apparatus according to the present invention includes a deflector that deflects a charged particle beam, a lens that converges the charged particle beam, and an imaging position of an intermediate image by the lens. A position measuring unit that measures the position of the charged particle beam in a plane perpendicular to the optical axis at a position, and a lens that adjusts the power of the lens based on the position information of the charged particle beam measured by the position measuring unit And a power adjustment means.

  For example, the lens power adjusting means may adjust the power of the lens so that the position of the charged particle beam during operation of the deflector matches the position of the charged particle beam during non-operation of the deflector. It is characterized by adjusting.

  The lens may be, for example, an electromagnetic lens or an electrostatic lens, and the lens may be arranged at an upper stage in the optical axis direction than the deflector. The charged particle beam apparatus may be an exposure apparatus, the charged particle beam apparatus may be a scanning electron microscope using an electron beam, and the exposure apparatus may include a plurality of exposure apparatuses. It can also be characterized by being a multi-beam exposure apparatus that exposes a desired pattern on a substrate to be exposed using a charged particle beam.

  The present invention may also be applied to a device manufacturing method comprising: a step of exposing the substrate to be exposed using the exposure apparatus; and a step of developing the exposed substrate to be exposed. The

  Further, the lens power adjustment method according to the present invention measures the position of the charged particle beam in a plane perpendicular to the optical axis at a position conjugate with the imaging position of the intermediate image by the lens that converges the charged particle beam, The power of the lens is adjusted based on the position information. The lens may be arranged in an upper stage in the optical axis direction than a deflector that deflects the charged particle beam.

  According to the present invention, it is possible to provide a charged particle beam apparatus with good drawing performance such as pattern dimension accuracy. Moreover, if a device is manufactured using this apparatus, a device with higher accuracy than before can be manufactured.

  Embodiments of the present invention will be described below with reference to the drawings. As examples of the charged particle beam apparatus, in the following embodiments, (1) an electron beam exposure apparatus that exposes an exposure substrate such as a wafer using one electron beam, and (2) a wafer such as a wafer that uses a plurality of electron beams. An example of an electron beam exposure apparatus that exposes an exposure substrate and (3) a scanning electron microscope that inspects a pattern of a circuit or the like on a wafer using an electron beam are shown. The above embodiments (1) and (2) can be similarly applied to an exposure apparatus using an ion beam as well as an electron beam. Further, the present invention can be similarly applied to an electron beam exposure apparatus that exposes a substrate to be exposed such as a wafer using a mask or an electron beam drawing apparatus having a photocathode.

  Embodiment 1 of the present invention relates to (1) an electron beam exposure apparatus that exposes a substrate to be exposed such as a wafer using one electron beam. FIG. 1 is a schematic diagram of a main part of an electron beam exposure apparatus according to Embodiment 1 of the present invention.

  The electron beam emitted from the electron source 101 forms an intermediate image 103 of the electron source 101 by the electromagnetic lens 102. The intermediate image 103 is projected onto the wafer 109 via an optical system including electromagnetic lenses 105 and 108 to form an image 110. At that time, the intermediate image 103 and the image 110 are in a positional relationship conjugate to the optical system.

  The blanker 104 is a deflector at the position of the intermediate image 103 and controls irradiation and shielding of the electron beam to the wafer 109. That is, when the electron beam is irradiated on the wafer 109, the electron beam is irradiated on the wafer 109 without using the blanker 104. On the other hand, when the electron beam is shielded from the wafer 109, the electron beam is deflected using the blanker 104, and the electron beam is shielded by the blanking aperture 106 positioned on the pupil of the optical system. The electron beam is scanned on the wafer by the electrostatic deflector 107.

  The wafer stage 111 is provided with a mark 112 for measuring the position of the image 110, and the reflected electron detector 113 detects reflected electrons from the mark 112. Based on the position information of the image 110 measured by the mark 112 and the backscattered electron detector 113, the electromagnetic lens power correction control circuit 114 determines the power of the electromagnetic lens 102 and feeds it back to the lens power.

  The position of the image in the vicinity of the wafer when the deflection center of the deflector and the surface of the wafer are in a conjugate positional relationship with the optical system will be described with reference to FIGS. First, the position of the image in the vicinity of the wafer when the deflection center of the deflector and the position of the intermediate image of the optical system coincide with each other will be described with reference to FIG.

  FIG. 2A is a schematic view showing that the deflection center 204 of the deflector 203 and the intermediate image 205 of a lens (not shown) coincide with each other. At this time, the optical axis 201 and the principal ray 202 of the electron beam coincide with each other. FIG. 2B is a schematic view showing the positions of the electron beam deflection center 206 and the electron beam image 207 in the vicinity of the wafer 208 in the state of FIG. The intermediate image 205 of the lens and the electron beam image 207 have a conjugate relationship, and the deflection center 204 of the deflector 203 and the intermediate image 205 of the lens coincide with each other, so that the deflection center of the electron beam in the vicinity of the wafer 208 is obtained. 206 and the electron beam image 207 coincide. As in FIG. 2A, the optical axis 201 and the principal ray 202 of the electron beam coincide.

  On the other hand, FIG. 2C is an overview diagram showing a state in which the deflector 203 is operated from the state of FIG. Since the deflection center 204 and the intermediate image 205 of the lens coincide with each other, the electron beam is deflected from the intermediate image 205 of the lens, that is, the deflection center 204. In FIG. 2D, the position of the electron beam deflection center 206 and the electron beam image 207 in the vicinity of the wafer 208 and the electron beam principal ray 202 in the state of FIG. 2C are tilted. FIG. The principal ray 202 of the electron beam is tilted with the deflection center 206 as a base point, and the electron beam image 207 is not shifted on the surface of the wafer 208.

  As described above with reference to FIGS. 2A to 2D, when the deflection center of the deflector and the position of the intermediate image of the optical system coincide with each other, the deflector 203 is operated when not operated. Sometimes, the position of the electron beam image 207 on the surface of the wafer 208 is not shifted. That is, when the position of the electron beam on the surface of the wafer 208 is measured while turning the deflector 203 on / off, the position does not move according to the turning on / off of the deflector 203.

Next, the position of the image in the vicinity of the wafer when the deflection center of the deflector and the position of the intermediate image of the optical system do not match will be described with reference to FIG.
FIG. 3A is a schematic view showing that an intermediate image 305 of a lens (not shown) is present below the deflection center 304 of the deflector 303. At this time, the optical axis 301 and the principal ray 302 of the electron beam coincide. FIG. 3B is a schematic view showing the positions of the electron beam deflection center 306 and the electron beam image 307 in the vicinity of the wafer 308 in the state of FIG. Although the lens intermediate image 305 and the electron beam image 307 have a conjugate relationship, the deflection center 304 of the deflector 303 and the lens intermediate image 305 do not coincide with each other. The center 306 and the electron beam image 307 do not coincide. As in FIG. 3A, the optical axis 301 and the principal ray 302 of the electron beam coincide.

  On the other hand, FIG. 3C is an overview diagram showing a state in which the deflector 303 is operated from the state of FIG. Since the deflection center 304 and the intermediate image 305 of the lens do not coincide with each other, the electron beam is deflected with the deflection center 304 as a base point, not the intermediate image 305 of the lens. In FIG. 3D, the position of the electron beam deflection center 306 and the electron beam image 307 in the vicinity of the wafer 308 and the principal ray 302 of the electron beam in the state of FIG. FIG. Since the principal ray 302 of the electron beam is inclined with respect to the deflection center 306, the electron beam image 307 is shifted on the surface of the wafer 308.

As described above with reference to FIGS. 3A to 3D, when the deflection center of the deflector does not coincide with the position of the intermediate image of the optical system, the deflector 303 is not operated. The position of the electron beam image 307 on the surface of the wafer 308 is deviated from when it is operated. That is, when the position of the electron beam on the surface of the wafer 308 is measured while turning the deflector 303 ON / OFF, the position moves according to ON / OFF of the deflector 303. By adjusting the power of a lens (not shown) located above the deflector 303, the deflection center of the deflector and the position of the intermediate image of the optical system are matched, and the wafer when the deflector 303 is not operated and when it is operated The position of the electron beam image 307 on the surface 308 can be prevented from moving.
Further, the position where the position of the electron beam image 307 is measured may be a position conjugate with the intermediate image 305 in the optical axis direction instead of the surface of the wafer.

  The position of the electron beam on the wafer surface is measured from a two-dimensional image or one-dimensional profile obtained by scanning a mark at the same position as the wafer surface. The position measurement of the electron beam using a two-dimensional image is performed by a method in which the center of gravity of the image in an appropriate evaluation region is used as the electron beam position, or the shape of the electron beam is detected as a circle or an ellipse. There is a method in which the center of the focal point is the electron beam position. Electron beam position measurement using a one-dimensional profile includes a method in which a portion obtained by differentiating the rising and falling edges of the profile is detected as Gaussian, and the center of these two Gaussians is used as the electron beam position.

With reference to FIG. 4, the operation of matching the intermediate image of the optical system and the deflection center of the deflector in the electron beam exposure apparatus of the present embodiment will be described.
In (Step 41), a pulse signal having a predetermined voltage is applied to the deflector. At this time, the voltage to be applied is lower than the voltage shielded by the blanking aperture below the deflector. That is, while applying a pulse signal to the deflector, it is possible to always measure the position of the image of the electron beam by using the mark at the same position as the surface of the wafer. After applying a pulse signal to the deflector, the process proceeds to step 42.

  In step 42, the position of the electron beam image is measured using a mark at the same position as the wafer surface. After measuring the position of the electron beam image, the process proceeds to step 43.

  In step 43, it is determined whether the electron beam image is moving at a position equivalent to the wafer surface. If the electron beam image is moving, the process proceeds to step 44, and if the electron beam image is not moving, the process proceeds to step 45.

  In (Step 44), the power of the lens to be focused on the deflection center of the deflector is changed by a minute amount within a predetermined range. After changing the lens power by a minute amount, the process proceeds to step 42.

  In (Step 45), the pulse signal applied to the deflector is stopped. After stopping the pulse signal applied to the deflector, the process proceeds to the end of processing.

  Embodiment 2 of the present invention relates to (2) an electron beam exposure apparatus that exposes an exposed substrate such as a wafer using a plurality of electron beams. FIG. 5 is a schematic view of the essential portions of an electron beam exposure apparatus according to Embodiment 2 of the present invention.

  Reference numerals 501 to 509 denote multi-source modules that form a plurality of electron source images and emit electron beams from the electron source images. In the case of FIG. 5, 25 multi-source modules are arranged in a two-dimensional array. ing. Reference numeral 501 denotes an electron source (crossover image) formed by the electron gun. The electron beam emitted from the electron source 501 is converted into a substantially parallel electron beam by the condenser lens 502. Reference numeral 503 denotes an aperture array in which apertures are two-dimensionally arranged, and reference numeral 504 denotes a lens array in which electrostatic lenses having the same optical power are two-dimensionally arranged. Reference numerals 505, 506, 507, and 508 denote multi-deflector arrays formed by two-dimensionally arraying electrostatic deflectors that can be individually driven, and 509 is a two-dimensional array of electrostatic blankers that can be individually driven. A blanker array formed as described above.

  Each function of the multi-source module will be described. The substantially parallel electron beam from the condenser lens 502 is divided into a plurality of electron beams by the aperture array 503. The divided electron beam forms an intermediate image 523 of the electron source 501 on the corresponding blanker of the blanker array 509 via the electrostatic lens of the corresponding lens array 504. At this time, the multi deflector arrays 505, 506, 507, and 508 individually adjust the position of the intermediate image 523 of the electron source formed on the blanker array 509 (the position in the plane orthogonal to the optical axis). Further, since the electron beam deflected by the blanker array 509 is blocked by the blanking aperture 510, the wafer 520 is not irradiated. On the other hand, since the electron beam that is not deflected by the blanker array 509 is not blocked by the blanking aperture 510, the wafer 520 is irradiated.

  A plurality of intermediate images of the electron source formed by the multi-source module are projected onto the wafer 520 through the reduction projection system of the magnetic lenses 515, 516, 517, and 518. At this time, when a plurality of intermediate images are projected onto the wafer 520, the focal position can be adjusted by dynamic focus lenses (electrostatic or magnetic field lenses) 511 and 512. Reference numerals 513 and 514 denote a main deflector and a sub deflector for deflecting each electron beam to a position to be exposed. Reference numeral 519 denotes a backscattered electron detector for measuring the position of each intermediate image of the electron source formed on the wafer 520. Reference numeral 521 denotes a stage for moving the wafer. Reference numeral 522 denotes a mark for detecting the position and beam shape of the electron beam. A lens array power correction control circuit 524 determines the power of the lens array 504 based on the position information of the image measured by the mark 522 and the backscattered electron detector 519.

  It is difficult to accurately align the deflection centers of the multi-deflector arrays 505 to 508 and the intermediate image 523 because the deflection centers of the multi-deflector arrays 505 to 508 cannot be accurately grasped. If the deflection centers of the multi-deflector arrays 505 to 508 and the intermediate image 523 are not precisely aligned, the electron beam image moves on the surface of the wafer 520 as described in the first embodiment. In particular, when the electron beam is turned on / off by operating the blanker array 509, the image of the electron beam moves on the surface of the wafer 520, and the electron beam is blurred. As a result, the dimensional accuracy of the drawn pattern deteriorates.

  Further, in order to avoid the movement of the image of the electron beam on the surface of the wafer 520, correction can be performed by moving the stage 521 up and down in the optical axis direction, but the magnification of the reduction projection system changes and reduction projection is performed. It is necessary to optically adjust the lens and deflector of the system.

  In order to accurately align the deflection centers of the multi-deflector arrays 505 to 508 and the intermediate image 523, an operation similar to the operation described in FIG. That is, a pulse signal is applied to the multi-deflector arrays 505 to 508, and the lens array 504 power is controlled by the lens array power correction control circuit 524 based on the position information of the image 525 measured by the mark 522 and the backscattered electron detector 519. And the center of deflection of the multi-deflector arrays 505 to 508 and the intermediate image 523 are accurately matched. As a result, when the electron beam is turned ON / OFF, the image of the electron beam can be prevented from moving on the surface of the wafer 520, and the dimensional accuracy of the drawing pattern can be improved.

  Embodiment 3 of the present invention relates to (3) a scanning electron microscope that inspects a pattern of a circuit or the like on a wafer using an electron beam. FIG. 6 is a schematic diagram of a main part of a scanning electron microscope according to the third embodiment of the present invention.

  This scanning electron microscope is configured by including an electron gun 601, an electron source 602, an extraction electrode 603, and an acceleration electrode 604. An extraction voltage V 1 is applied between the electron source 602 and the extraction electrode 603, whereby the electron beam 605 is extracted from the electron source 602. The acceleration electrode 604 is maintained at the ground potential, and the acceleration voltage Vacc is applied between the acceleration electrode 604 and the electron source 602, whereby the electron beam 605 is accelerated. The accelerated electron beam 605 is converged by the electromagnetic lens 606 so that a crossover 608 is generated, and further converged by the electromagnetic lens 610 on the surface of the sample 612 such as a wafer on the sample stage 613.

  When the image 615 of the electron beam 605 focused on the surface of the sample 612 scans the surface of the sample 612, secondary electrons and reflected electrons are generated from the sample 612. The generated secondary electrons are detected by the electron detector 614 and converted into an electric signal.

  An aperture 607 is disposed between the electromagnetic lens 606 and the crossover 608, and the aperture angle of the electron beam 605 is determined by the aperture 607. Further, an electron beam scanning deflector 611 is disposed between the crossover 608 and the electromagnetic lens 610 or in the electromagnetic lens 610, and the electron beam scanning deflector 611 scans the sample 612 with the image 615. Has a function of deflecting the electron beam 605. In the case of the present embodiment, the electron beam scanning deflector 611 is provided in the electromagnetic lens 610, and the deflection center of the electron beam scanning deflector 611 and the lens center of the electromagnetic lens 610 are made to coincide with each other. The structure reduces the deflection distortion. By scanning the sample 612 with the image 615, secondary electrons generated from various parts of the sample 612 are detected by the electron detector 614, and a pattern such as a circuit on the sample 612 is inspected based on the detected information.

  The blanking deflector 609 is disposed between the aperture 607 and the electron beam scanning deflector 611, and deflects and blanks the electron beam 605 at a position where the crossover 608 is formed. If the point other than the crossover 608 is deflected to blank the electron beam 605, the irradiation position of the electron beam 605 moves on the surface of the sample 612 during the deflection as described in the first embodiment. . If blanking is performed when the electron beam 605 has a certain area, an electron beam that cannot be shielded by the aperture 607 exists during blanking, and an adjacent region that is not desired to be irradiated is irradiated. There is.

  In order to accurately match the deflection center of the blanking deflector 609 and the crossover 608, the same operation as that described in FIG. 4 of the first embodiment is performed here. That is, a pulse signal is applied to the blanking deflector 609, and the power of the electromagnetic lens 606 is determined by the electromagnetic lens power correction control circuit 616 based on position information of a pattern such as a circuit measured by the electron detector 614. Thus, the deflection center of the blanking deflector 609 and the crossover 608 are accurately aligned. As a result, it is possible to avoid irradiating adjacent areas that are not desired to be irradiated during blanking.

  Next, as a fourth embodiment of the present invention, an example of a device production method using the electron beam exposure apparatus described in the first or second embodiment will be described.

FIG. 7 shows a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 71 (circuit design), a semiconductor device circuit is designed. In step 72 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern. On the other hand, in step 73 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 74 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the exposure control data prepared in step 72 is input. The next step 75 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 74, and is a process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including. In step 76 (inspection), the semiconductor device manufactured in step 75 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, a semiconductor device is completed and shipped (step 77).
FIG. 8 shows a detailed flow of the wafer process. In step 81 (oxidation), the wafer surface is oxidized. In step 82 (CVD), an insulating film is formed on the wafer surface. In step 83 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 84 (ion implantation), ions are implanted into the wafer. In step 85 (resist process), a photosensitive agent is applied to the wafer. In step 86 (exposure), the circuit pattern is printed onto the wafer by exposure using the exposure apparatus described above. In step 87 (development), the exposed wafer is developed. In step 88 (etching), portions other than the developed resist image are removed. In step 89 (resist stripping), unnecessary resist after etching is removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.
By using the manufacturing method of this embodiment, a highly integrated semiconductor device can be manufactured with high pattern dimension accuracy.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram for explaining an outline of a main part of an electron beam exposure apparatus that exposes a substrate to be exposed such as a wafer using one electron beam according to Embodiment 1 of the present invention. FIG. 6 is a diagram for explaining the position of the image in the vicinity of the wafer when the deflection center of the deflector and the position of the intermediate image of the optical system coincide with each other in the first embodiment of the present invention. FIG. 6 is a diagram for explaining the position of the image in the vicinity of the wafer when the deflection center of the deflector and the position of the intermediate image of the optical system do not match according to the first embodiment of the present invention. FIG. 6 is a diagram for explaining a flow according to the first embodiment of the present invention in which the intermediate image of the optical system and the deflection center of the deflector are matched. It is a figure for demonstrating the principal part outline of the electron beam exposure apparatus which concerns on Example 2 of this invention and exposes to-be-exposed substrates, such as a wafer, using a several electron beam. FIG. 10 is a diagram for explaining an outline of a main part of a scanning electron microscope according to a third embodiment of the present invention, which inspects a pattern such as a circuit on a wafer using an electron beam. It is a figure for demonstrating the manufacturing flow of a microdevice. It is a figure for demonstrating a wafer process.

Explanation of symbols

  101: Electron source, 102: Electromagnetic lens, 103: Intermediate image, 104: Blanker, 105: Electromagnetic lens, 106: Blanking aperture, 107: Electrostatic deflector, 108: Electromagnetic lens, 109: Wafer, 110: Image, 111: Wafer stage, 112: Position detection mark, 113: Reflected electron detector, 114: Lens power correction control circuit, 201: Optical axis, 202: Main beam of electron beam, 203: Deflector, 204: Deflector Deflection center, 205: Intermediate image, 206: Deflection center near wafer, 207: Image, 208: Wafer, 301: Optical axis, 302: Main ray of electron beam, 303: Deflector, 304: Deflection center of deflector 305: Intermediate image, 306: Center of deflection near wafer, 307: Image, 308: Wafer, 501: Electron source (crossover image), 502: Co Denser lens, 503: Aperture array, 504: Lens array, 505: Multi deflector array, 506: Multi deflector array, 507: Multi deflector array, 508: Multi deflector array, 509: Blanker array, 510: Blanking Aperture, 511: Dynamic focus lens, 512: Dynamic focus lens, 513: Main deflector, 514: Sub deflector, 515: Magnetic lens, 516: Magnetic lens, 517: Magnetic lens, 518: Magnetic lens, 519: Reflected electron Detector 520: Wafer 521: Stage 522: Mark 523: Intermediate image 524: Lens array power correction control circuit 525: Image, 601: Electron gun, 602: Electron source, 603: Extraction electrode, 604: Accelerating electrode, 605: electron beam, 606: Magnetic lens, 607: Aperture, 608: Crossover, 609: Blanking deflector, 610: Electromagnetic lens, 611: Electron beam scanning deflector, 612: Sample, 613: Sample stage, 614: Electron detector, 615 : Image, 616: Electromagnetic lens power correction control circuit.

Claims (10)

A deflector for deflecting a charged particle beam;
A lens that converges the charged particle beam;
A position measuring means for measuring the position of the charged particle beam in a plane perpendicular to the optical axis at a position conjugate with the imaging position of the intermediate image by the lens;
A charged particle beam apparatus comprising: lens power adjusting means for adjusting power of the lens based on position information of the charged particle beam measured by the position measuring means.   The lens power adjusting means adjusts the power of the lens so that the position of the charged particle beam when the deflector is operating matches the position of the charged particle beam when the deflector is not operating. The charged particle beam apparatus according to claim 1, wherein:   The charged particle beam device according to claim 1, wherein the lens is an electromagnetic lens or an electrostatic lens. 4. The charged particle beam apparatus according to claim 1, wherein the lens is arranged at an upper stage in the optical axis direction than the deflector. 5.   The charged particle beam apparatus according to claim 1, wherein the charged particle beam apparatus is an exposure apparatus.   The charged particle beam apparatus according to claim 1, wherein the charged particle beam apparatus is a scanning electron microscope using an electron beam.   6. The charged particle beam apparatus according to claim 5, wherein the exposure apparatus is a multi-beam exposure apparatus that exposes a desired pattern on a substrate to be exposed using a plurality of charged particle beams.   Measure the position of the charged particle beam in a plane perpendicular to the optical axis at a position conjugate with the image formation position of the intermediate image by the lens that converges the charged particle beam, and adjust the power of the lens based on the position information And a lens power adjusting method. The lens power adjustment method according to claim 8, wherein the lens is arranged in an upper stage in an optical axis direction with respect to a deflector that deflects the charged particle beam.   A device manufacturing method comprising: exposing the exposed substrate using the exposure apparatus according to claim 5; and developing the exposed substrate to be exposed.

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