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JP2007018805A - Switch device - Google Patents

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JP2007018805A
JP2007018805A JP2005197501A JP2005197501A JP2007018805A JP 2007018805 A JP2007018805 A JP 2007018805A JP 2005197501 A JP2005197501 A JP 2005197501A JP 2005197501 A JP2005197501 A JP 2005197501A JP 2007018805 A JP2007018805 A JP 2007018805A
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magnetic
permanent magnet
detection element
magnetic field
moved
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JP4602855B2 (en
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Tatsuyuki Yamaguchi
達之 山口
Kinji Muraki
均至 村木
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Tokai Rika Co Ltd
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Tokai Rika Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a switch device capable of improving changeover accuracy between a non-detection state and a detection state of a magnetic detection element, and of appropriately protecting the magnetic detection element from influence of a disturbance magnetic field. <P>SOLUTION: When a permanent magnet 5 is moved to a slide hole 7 equivalent to a first position, a magnetic circuit B1 is formed by a frame-like magnetic body 3 and the permanent magnet 5, and the magnetic field of the permanent magnet 5 is intensively given to the frame-like magnetic body 3. When the permanent magnet 5 is moved to an opening 8 equivalent to a second position so as to be inserted therein, a magnetic circuit is formed by plate-like magnetic bodies 4a and 4b, a Hall element 2 and the permanent magnet 5, and the magnetic field of the permanent magnet 5 is intensively given to the Hall element 2. Since the Hall element 2 is surrounded by the frame-like magnetic body 3, it is protected by the frame-like magnetic body 3 even when a disturbance magnetic field is generated. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、磁気検出素子に対して永久磁石を離間および近接する方向へ移動させることにより磁気検出素子を非検出状態と検出状態とに切り替える構成のスイッチ装置に関する。   The present invention relates to a switch device configured to switch a magnetic detection element between a non-detection state and a detection state by moving a permanent magnet toward and away from the magnetic detection element.

この種のスイッチ装置は、例えば車載機器を制御するための制御基板上に固定状態に配置された磁気検出素子と、スイッチ装置の操作子の移動に連動して磁気検出素子に対して移動可能に設けられた永久磁石とを備えて構成されている。そして、操作子の操作に伴い永久磁石を磁気検出素子に対して離間および近接する方向へ移動させると、永久磁石から磁気検出素子に与えられる磁界の強さ(換言すれば、磁気検出素子が検出する磁界の強さ)が変化する。磁気検出素子は、与えられた磁界の強さが所定の閾値以下であれば非検出状態となり、一方、与えられた磁界の強さが所定の閾値以上であれば検出状態となるようになっていて、磁気検出素子が何れの状態になっているかに基づいて、スイッチ装置がスイッチ機能を果たすことができるように構成されている(例えば、特許文献1参照)。   This type of switch device is movable with respect to the magnetic detection element in conjunction with, for example, a magnetic detection element arranged in a fixed state on a control board for controlling an in-vehicle device, and an operation element of the switch device. And a permanent magnet provided. When the permanent magnet is moved away from or close to the magnetic detection element in accordance with the operation of the operation element, the strength of the magnetic field applied from the permanent magnet to the magnetic detection element (in other words, the magnetic detection element detects the magnetic field). The strength of the magnetic field to be changed). The magnetic detection element is in a non-detection state if the strength of the applied magnetic field is less than or equal to a predetermined threshold value, and is in a detection state if the strength of the applied magnetic field is greater than or equal to the predetermined threshold value. Thus, the switch device is configured to perform the switch function based on which state the magnetic detection element is in (see, for example, Patent Document 1).

上記した構成のスイッチ装置は、機械的な接点構造を有するスイッチ装置のように接点間の摩耗によりスイッチ機能が果たせなくなるようなことがなく優れた耐久性を有するので、特に耐久性が求められる車載機器用のスイッチ装置において利用されている。
また、このような構成のスイッチ装置では、スイッチ装置外部から発生する外乱磁界を磁気検出素子が検出して誤作動してしまうことを防止するために、磁気検出素子の周囲を磁性体で囲んで磁気検出素子を外乱磁界の影響から保護する構成とすることがある。
特開2003−115229号公報
Since the switch device having the above-described configuration has excellent durability without being able to perform the switch function due to wear between the contacts as in the switch device having a mechanical contact structure, the vehicle is particularly required to have durability. It is used in switch devices for equipment.
Further, in the switch device having such a configuration, the magnetic detection element is surrounded by a magnetic body in order to prevent the magnetic detection element from detecting a disturbance magnetic field generated from the outside of the switch device and malfunctioning. In some cases, the magnetic detection element is protected from the influence of a disturbance magnetic field.
JP 2003-115229 A

ところで、近年では、スイッチ装置自体が小型化する傾向があり、従って、磁気検出素子に対する永久磁石の移動距離が短くなっていると共に、磁気検出素子とこれを保護する磁性体との間隔も狭くなっている。
しかしながら、このような構成では、以下のような欠点がある。
磁気検出素子に対する永久磁石の移動距離が短くなっていることから、永久磁石を移動させたとしても磁気検出素子に与えられる磁界の強さの変化量が小さくなっていて、磁気検出素子に対して所定の閾値以下または以上の磁界を適切に与えられないことがある。また、磁気検出素子と磁性体との間隔が狭くなっていることから、永久磁石の磁界が磁気検出素子側ではなく磁性体側に引き寄せられてしまい、磁気検出素子に十分な磁界が与えられないことがある。このようなことから、磁気検出素子の非検出状態と検出状態との切り替え精度が悪くなることがあった。
By the way, in recent years, there is a tendency for the switch device itself to be miniaturized, and accordingly, the moving distance of the permanent magnet with respect to the magnetic detection element is shortened, and the distance between the magnetic detection element and the magnetic material protecting it is also narrowed. ing.
However, such a configuration has the following drawbacks.
Since the moving distance of the permanent magnet with respect to the magnetic detection element is short, even if the permanent magnet is moved, the amount of change in the strength of the magnetic field applied to the magnetic detection element is small and There are cases where a magnetic field below or above a predetermined threshold cannot be properly applied. In addition, since the gap between the magnetic detection element and the magnetic body is narrow, the magnetic field of the permanent magnet is attracted not to the magnetic detection element side but to the magnetic body side, so that a sufficient magnetic field is not applied to the magnetic detection element. There is. For this reason, the switching accuracy between the non-detection state and the detection state of the magnetic detection element may be deteriorated.

本発明は、上記した事情に鑑みてなされたものであり、その目的は、磁気検出素子の非検出状態と検出状態との切り替え精度の向上を図ることができると共に、磁気検出素子を外乱磁界の影響から適切に保護することができるスイッチ装置を提供することにある。   The present invention has been made in view of the above circumstances, and an object of the present invention is to improve the switching accuracy between the non-detection state and the detection state of the magnetic detection element, and to prevent the magnetic detection element from being affected by a disturbance magnetic field. It is an object of the present invention to provide a switch device that can be appropriately protected from the influence.

上記した目的を達成するために、本発明のスイッチ装置は、永久磁石が磁気検出素子から離間した第1の位置に移動されると前記磁気検出素子が非検出状態となり、一方、前記永久磁石が前記磁気検出素子に近接した第2の位置に移動されると前記磁気検出素子が検出状態となる構成のスイッチ装置において、前記磁気検出素子を囲むようにして配置され、前記永久磁石が前記第1の位置に移動されたときに前記永久磁石と共に磁気回路を形成する第1の磁性体と、前記磁気検出素子を挟むようにして配置され、前記永久磁石が前記第2の位置に移動されたときに前記磁気検出素子と前記永久磁石と共に磁気回路を形成する第2の磁性体とを備えたことに特徴を有する。   In order to achieve the above-described object, the switch device according to the present invention is configured such that when the permanent magnet is moved to the first position separated from the magnetic detection element, the magnetic detection element is in a non-detection state, while the permanent magnet is In the switch device configured such that when the magnetic detection element is moved to the second position close to the magnetic detection element, the magnetic detection element is disposed so as to surround the magnetic detection element, and the permanent magnet is disposed in the first position. When the permanent magnet is moved to the second position, the first magnetic body that forms a magnetic circuit together with the permanent magnet and the magnetic detection element are disposed between the first magnetic body and the permanent magnet. It has the characteristics provided with the 2nd magnetic body which forms a magnetic circuit with an element and the said permanent magnet.

このように構成すると、永久磁石が第1の位置に移動されて第1の磁性体と共に磁気回路が形成された状態においては、永久磁石の磁界は、この磁気回路の一部を形成する第1の磁性体に集中的に与えられる。従って、この磁気回路の形成に関与しない磁気検出素子には、所定の閾値以上の磁界が与えられることはなく非検出状態となる。一方、永久磁石が第2の位置に移動されて第2の磁性体と磁気検出素子と共に磁気回路が形成された状態においては、永久磁石の磁界は、この磁気回路の一部を形成する磁気検出素子に集中的に与えられる。従って、磁気検出素子には、所定の閾値以上の磁界が適切に与えられ検出状態となる。   With this configuration, in the state where the permanent magnet is moved to the first position and the magnetic circuit is formed together with the first magnetic body, the magnetic field of the permanent magnet forms the first part of the magnetic circuit. Of magnetic material. Therefore, the magnetic detection elements not involved in the formation of the magnetic circuit are not applied with a magnetic field of a predetermined threshold value or more and are not detected. On the other hand, in the state where the permanent magnet is moved to the second position and the magnetic circuit is formed together with the second magnetic body and the magnetic detecting element, the magnetic field of the permanent magnet forms a part of the magnetic circuit. It is given intensively to the element. Therefore, the magnetic detection element is appropriately given a magnetic field equal to or greater than a predetermined threshold value to enter a detection state.

本発明のスイッチ装置によれば、永久磁石が第1の位置に移動された状態では、永久磁石の磁界は磁気検出素子には殆んど或いは全く作用せず、一方、永久磁石が第2の位置に移動された状態では、永久磁石の磁界が磁気検出素子に効率よく作用するようになる。これにより、磁気検出素子の非検出状態と検出状態との切り替え精度の向上を図ることができる。また、第1の磁性体が磁気検出素子を囲むようにして配置されているので、磁気検出素子を外乱磁界の影響から適切に保護することができる。   According to the switching device of the present invention, in the state where the permanent magnet is moved to the first position, the magnetic field of the permanent magnet has little or no effect on the magnetic detection element, while the permanent magnet is in the second position. When moved to the position, the magnetic field of the permanent magnet acts on the magnetic detection element efficiently. Thereby, the switching accuracy between the non-detection state and the detection state of the magnetic detection element can be improved. In addition, since the first magnetic body is arranged so as to surround the magnetic detection element, the magnetic detection element can be appropriately protected from the influence of the disturbance magnetic field.

以下、本発明の一実施形態について図面を参照して説明する。図1および図2において、本発明のスイッチ装置1は、ホール素子2(磁気検出素子に相当)、枠状磁性体3(第1の磁性体に相当)、一対の板状磁性体4a,4b(第2の磁性体に相当)および永久磁石5を備えて構成されている。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings. 1 and 2, the switch device 1 of the present invention includes a Hall element 2 (corresponding to a magnetic detection element), a frame-like magnetic body 3 (corresponding to a first magnetic body), and a pair of plate-like magnetic bodies 4a and 4b. (Corresponding to a second magnetic body) and a permanent magnet 5.

ホール素子2は、例えば車載機器を制御するための制御基板6上に固定状態に配置されていて、与えられた磁界の強さが所定の閾値以下であれば非検出状態となり、一方、与えられた磁界の強さが所定の閾値以上であれば検出状態となるようになっている。そして、このホール素子2が何れの状態になっているかに基づいて、スイッチ装置1がスイッチ機能を果たすことができるようになっている。
枠状磁性体3は、全体として矩形枠状の形状をしていて、上記したホール素子2を囲むようにして且つ上記した制御基板6上に固定状態に配置されている。また、枠状磁性体3の一端側(図面では右側)には、図面中矢印A1,A2方向に開口したスライド孔7が設けられている。尚、このスライド孔7は本発明でいう第1の位置に相当する。
板状磁性体4a,4bは、夫々が全体として矩形板状の形状をしていて、その一部(図面では左側の部分)が上記したホール素子2を挟むようにして且つ上記した制御基板6上に固定状態に配置されている。また、板状磁性体4a,4bの残りの部分(図面では右側の部分)がホール素子2より図面中矢印A2方向に突出していて上記したスライド孔7に対向する開口部8を形成している。尚、この開口部8は本発明でいう第2の位置に相当する。
The Hall element 2 is arranged in a fixed state on, for example, a control board 6 for controlling an in-vehicle device, and is in a non-detection state if the applied magnetic field strength is equal to or less than a predetermined threshold value. If the strength of the magnetic field is equal to or greater than a predetermined threshold value, the detection state is set. The switch device 1 can perform a switch function based on which state of the Hall element 2 is.
The frame-shaped magnetic body 3 has a rectangular frame shape as a whole, and is arranged in a fixed state on the control board 6 so as to surround the Hall element 2 described above. Further, a slide hole 7 opened in the direction of arrows A1 and A2 in the drawing is provided on one end side (right side in the drawing) of the frame-like magnetic body 3. The slide hole 7 corresponds to the first position in the present invention.
Each of the plate-like magnetic bodies 4a and 4b has a rectangular plate shape as a whole, and a part (the left portion in the drawing) sandwiches the above-described Hall element 2 and is on the control board 6 described above. Arranged in a fixed state. Further, the remaining part (the right part in the drawing) of the plate-like magnetic bodies 4a and 4b protrudes from the Hall element 2 in the direction of the arrow A2 in the drawing to form an opening 8 that faces the slide hole 7 described above. . The opening 8 corresponds to the second position in the present invention.

永久磁石5は、スイッチ装置1の操作子として機能するスライダ9の軸部9aの端部(図面では左側の端部)に固定状態に配置されている。そして、スライダ9が上記したスライド孔7に軸部9aを挿通した態様で図面中矢印A1,A2方向に往復移動されることに伴って、永久磁石5は、図1に示す第1の位置と図2に示す第2の位置との間で往復移動可能に設けられている。また、スライダ9の軸部9aに巻回されている圧縮コイルバネ10により、永久磁石5は、スライダ9と共に図面中矢印A2方向に付勢されている。尚、永久磁石5は、上記したスライダ9の移動方向に対して略直交する方向(図面では上下方向であり、この場合、上側がN極で下側がS極)に着磁されている。また、永久磁石5の着磁方向の幅aは、上記したスライド孔7の開口幅bおよび開口部8の開口幅cより若干小さく設定されている(図1参照)。   The permanent magnet 5 is disposed in a fixed state at the end portion (left end portion in the drawing) of the shaft portion 9a of the slider 9 that functions as an operator of the switch device 1. Then, as the slider 9 is reciprocated in the directions of arrows A1 and A2 in the drawing in a manner in which the shaft portion 9a is inserted into the slide hole 7 described above, the permanent magnet 5 has the first position shown in FIG. It is provided so as to be able to reciprocate between the second position shown in FIG. Further, the permanent magnet 5 is urged together with the slider 9 in the direction of the arrow A2 by the compression coil spring 10 wound around the shaft portion 9a of the slider 9. The permanent magnet 5 is magnetized in a direction substantially perpendicular to the moving direction of the slider 9 (the vertical direction in the drawing, in this case, the upper side is N pole and the lower side is S pole). The width a in the magnetization direction of the permanent magnet 5 is set slightly smaller than the opening width b of the slide hole 7 and the opening width c of the opening 8 (see FIG. 1).

次に、上記した構成の作用について説明する。
図1において、永久磁石5は、ホール素子2から離間した第1の位置に移動されている。この状態においては、永久磁石5の着磁方向の幅aがスライド孔7の開口幅bより若干小さく設定されていることから、枠状磁性体3と永久磁石5とが近接した状態となり、これによって、枠状磁性体3が永久磁石5と共に磁気回路B1を形成する。この磁気回路B1では、永久磁石5の磁界は、永久磁石5のN極→枠状磁性体3→永久磁石5のS極の順に還流する過程で、この磁気回路B1の一部を形成する枠状磁性体3に集中的に与えられる。従って、この磁気回路B1の形成に関与しないホール素子2には、所定の閾値以上の磁界が与えられることはなく非検出状態となる。
Next, the operation of the above configuration will be described.
In FIG. 1, the permanent magnet 5 is moved to a first position separated from the Hall element 2. In this state, the width a in the magnetization direction of the permanent magnet 5 is set slightly smaller than the opening width b of the slide hole 7, so that the frame-shaped magnetic body 3 and the permanent magnet 5 are in close proximity. Thus, the frame-shaped magnetic body 3 forms a magnetic circuit B1 together with the permanent magnet 5. In the magnetic circuit B1, the magnetic field of the permanent magnet 5 flows in the order of the N pole of the permanent magnet 5 → the frame-shaped magnetic body 3 → the S pole of the permanent magnet 5, and forms a part of the magnetic circuit B1. The concentrated magnetic body 3 is given intensively. Therefore, the Hall element 2 that is not involved in the formation of the magnetic circuit B1 is not applied with a magnetic field of a predetermined threshold value or more and is in a non-detected state.

次に、この状態から、スライダ9を圧縮コイルバネ10の付勢力に抗しながら押圧して図1中矢印A1方向に移動させると、永久磁石5は、このスライダ9の移動に連動して開口部8内に挿入され、ホール素子2に近接した第2の位置に移動される(図2参照)。この状態においては、永久磁石5の着磁方向の幅aが開口部8の開口幅cより若干小さく設定されていることから、板状磁性体4a,4bと永久磁石5とが近接した状態となり、これによって、板状磁性体4a,4bがホール素子2と永久磁石5と共に磁気回路B2を形成する。この磁気回路B2では、永久磁石5の磁界は、永久磁石5のN極→板状磁性体4a→ホール素子2→板状磁性体4b→永久磁石5のS極の順に還流する過程で、この磁気回路B2の一部を形成するホール素子2に集中的に与えられる。従って、ホール素子2には、所定の閾値以上の磁界が適切に与えられ検出状態となる。   Next, when the slider 9 is pressed against the urging force of the compression coil spring 10 and moved in the direction of the arrow A1 in FIG. 1 from this state, the permanent magnet 5 is opened in conjunction with the movement of the slider 9. 8 and is moved to a second position close to the Hall element 2 (see FIG. 2). In this state, since the width a in the magnetization direction of the permanent magnet 5 is set slightly smaller than the opening width c of the opening 8, the plate-like magnetic bodies 4 a and 4 b and the permanent magnet 5 are in close proximity. Thereby, the plate-like magnetic bodies 4 a and 4 b together with the Hall element 2 and the permanent magnet 5 form a magnetic circuit B 2. In the magnetic circuit B2, the magnetic field of the permanent magnet 5 is recirculated in the order of the N pole of the permanent magnet 5 → the plate-like magnetic body 4a → the Hall element 2 → the plate-like magnetic body 4b → the S pole of the permanent magnet 5. It is given intensively to the Hall element 2 that forms part of the magnetic circuit B2. Therefore, the Hall element 2 is appropriately detected with a magnetic field equal to or greater than a predetermined threshold.

以上に説明したように本実施形態によれば、永久磁石5がホール素子2から離間した第1の位置に移動された状態では、永久磁石5の磁界はホール素子2には殆んど或いは全く作用せず、一方、永久磁石5がホール素子2に近接した第2の位置に移動された状態では、永久磁石5の磁界がホール素子2に効率よく作用するようになる。これにより、ホール素子2の非検出状態と検出状態との切り替え精度の向上を図ることができる。また、枠状磁性体3がホール素子2を囲むようにして配置されているので、ホール素子2を外乱磁界の影響から適切に保護することができる。   As described above, according to the present embodiment, when the permanent magnet 5 is moved to the first position separated from the Hall element 2, the magnetic field of the permanent magnet 5 is little or not at the Hall element 2. On the other hand, when the permanent magnet 5 is moved to the second position close to the Hall element 2, the magnetic field of the permanent magnet 5 efficiently acts on the Hall element 2. Thereby, the switching accuracy between the non-detection state and the detection state of the Hall element 2 can be improved. In addition, since the frame-shaped magnetic body 3 is disposed so as to surround the Hall element 2, the Hall element 2 can be appropriately protected from the influence of the disturbance magnetic field.

尚、本発明は、上記した実施形態にのみ限定されるものではなく、以下のように変形または拡張することができる。
磁気検出素子としては、上記したホール素子2に限られず、例えば、MR(磁気抵抗効果)素子、GMR(巨大磁気抵抗効果)素子やリードスイッチなどのように磁界が与えられることによって動作するものであれば良い。
第1の磁性体および第2の磁性体としては、例えば、鉄、ニッケル、コバルト、フェライト、アモルファス磁性体などのように磁場の中で磁化される性質を有するもので構成すれば良い。また、形状としても、上記した枠状や板状のものに限られず、第1の位置および第2の位置で磁気回路を形成することが可能な形状であれば良い。
In addition, this invention is not limited only to above-described embodiment, It can deform | transform or expand as follows.
The magnetic detection element is not limited to the Hall element 2 described above, and operates by applying a magnetic field such as an MR (magnetoresistive effect) element, a GMR (giant magnetoresistive effect) element, or a reed switch. I just need it.
What is necessary is just to comprise as a 1st magnetic body and a 2nd magnetic body by what has the property magnetized in a magnetic field like iron, nickel, cobalt, a ferrite, an amorphous magnetic body, etc., for example. Further, the shape is not limited to the above-described frame shape or plate shape, and may be any shape that can form the magnetic circuit at the first position and the second position.

永久磁石5の着磁方向としては、スライダ9の移動方向に対して略直交する方向に限られず、第1の位置および第2の位置で磁気回路を形成することが可能な方向に着磁したものであれば良い。
本発明のスイッチ装置1は、制御基板6の種類やスライダ9の形状などを適宜変更することにより、例えば、バックルスイッチ、カーテシスイッチ、ストップランプスイッチ、プッシュスタートスイッチ、ニュートラルポジションスイッチなどの様々なスイッチ装置に適用することができる。
The magnetization direction of the permanent magnet 5 is not limited to the direction substantially orthogonal to the moving direction of the slider 9, but is magnetized in a direction in which a magnetic circuit can be formed at the first position and the second position. Anything is fine.
The switch device 1 according to the present invention can be used in various switches such as a buckle switch, a courtesy switch, a stop lamp switch, a push start switch, and a neutral position switch by appropriately changing the type of the control board 6 and the shape of the slider 9. It can be applied to the device.

本発明の一実施形態を示すものであって、永久磁石が第1の位置に移動された状態を示す断面図Sectional drawing which shows one Embodiment of this invention and shows the state by which the permanent magnet was moved to the 1st position 永久磁石が第2の位置に移動された状態を示す断面図Sectional drawing which shows the state by which the permanent magnet was moved to the 2nd position

符号の説明Explanation of symbols

図面中、1はスイッチ装置、2はホール素子(磁気検出素子)、3は枠状磁性体(第1の磁性体)、4a,4bは板状磁性体(第2の磁性体)、5は永久磁石を示す。   In the drawings, 1 is a switching device, 2 is a Hall element (magnetic detection element), 3 is a frame-like magnetic body (first magnetic body), 4a and 4b are plate-like magnetic bodies (second magnetic body), 5 is A permanent magnet is shown.

Claims (1)

永久磁石が磁気検出素子から離間した第1の位置に移動されると前記磁気検出素子が非検出状態となり、一方、前記永久磁石が前記磁気検出素子に近接した第2の位置に移動されると前記磁気検出素子が検出状態となる構成のスイッチ装置において、
前記磁気検出素子を囲むようにして配置され、前記永久磁石が前記第1の位置に移動されたときに前記永久磁石と共に磁気回路を形成する第1の磁性体と、
前記磁気検出素子を挟むようにして配置され、前記永久磁石が前記第2の位置に移動されたときに前記磁気検出素子と前記永久磁石と共に磁気回路を形成する第2の磁性体とを備えたことを特徴とするスイッチ装置。


When the permanent magnet is moved to a first position separated from the magnetic detection element, the magnetic detection element is in a non-detection state, while when the permanent magnet is moved to a second position close to the magnetic detection element. In the switch device configured so that the magnetic detection element is in a detection state,
A first magnetic body disposed surrounding the magnetic detection element and forming a magnetic circuit with the permanent magnet when the permanent magnet is moved to the first position;
The magnetic detection element is disposed so as to sandwich the magnetic detection element, and includes the second magnetic body that forms a magnetic circuit together with the magnetic detection element and the permanent magnet when the permanent magnet is moved to the second position. A switch device characterized.


JP2005197501A 2005-07-06 2005-07-06 Switch device Expired - Fee Related JP4602855B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013043590A (en) * 2011-08-25 2013-03-04 Nippon Lift Kk Under-floor housing type elevating device
WO2014046123A1 (en) * 2012-09-18 2014-03-27 株式会社フジクラ Seat device
CN116633338A (en) * 2023-05-30 2023-08-22 科都电气股份有限公司 A Hall speed regulating signal switch

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS488669U (en) * 1971-06-10 1973-01-31
JPS50139265U (en) * 1974-04-30 1975-11-17
JPS5564226U (en) * 1978-10-27 1980-05-01
JPH10327578A (en) * 1997-05-23 1998-12-08 Nhk Spring Co Ltd Dc voltage boosting circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS488669U (en) * 1971-06-10 1973-01-31
JPS50139265U (en) * 1974-04-30 1975-11-17
JPS5564226U (en) * 1978-10-27 1980-05-01
JPH10327578A (en) * 1997-05-23 1998-12-08 Nhk Spring Co Ltd Dc voltage boosting circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013043590A (en) * 2011-08-25 2013-03-04 Nippon Lift Kk Under-floor housing type elevating device
WO2014046123A1 (en) * 2012-09-18 2014-03-27 株式会社フジクラ Seat device
CN116633338A (en) * 2023-05-30 2023-08-22 科都电气股份有限公司 A Hall speed regulating signal switch

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