JP2007005661A - Bevel polishing method and bevel polisher - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a bevel polishing method and a bevel polisher, which keeps chemicals and slurries from contacting with any part of the device surface when polishing the edge, which reduces the move of a substrate under process to improve the processing efficiency, and also which can be achieved with a small size at low cost. <P>SOLUTION: The bevel polisher 1 comprises a turn table 2 for holding and turning a substrate W under processing, and a bevel polisher unit 11 for polishing the substrate W held on the turn table 2 while contacting with its edge including a bevel. The bevel polisher unit 11 comprises a pair of first and second arms 14, 18 opposed each other with a gap 21 provided for inserting part of the edge, and a polishing member 22 for polishing the edge mounted in the gap 21. At least one of the first and second arms 14, 18 has a feed hole 15 for feeding the polishing member 22 with a polishing liquid, and a suction hole 19 near the polishing member 22 for sucking and draining liquid drops fed to the substrate W and various materials such as polishing residues, etc. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a bevel polishing method and a bevel polishing apparatus for polishing various substrates such as a semiconductor wafer, and more particularly, a bevel polishing method and a bevel polishing for removing unnecessary film deposited on an edge portion of a semiconductor wafer by polishing. It relates to the device.

  Various semiconductor elements include a film forming process for forming various films on the surface of a semiconductor wafer (hereinafter simply referred to as a wafer), an etching process for removing unnecessary portions from the formed thin film, a cleaning process for cleaning the wafer surface, and drying. It is manufactured by repeating various processes such as a drying process to form a fine pattern on the wafer surface.

However, an unnecessary film such as an insulating film or a metal film is formed on the peripheral edge of the formed wafer, that is, the edge part, and the film formation on the edge end part or a part of the film is almost peeled off. It is in an unstable state such as being. If this state is left as it is, the end portion is chipped or peeled off during the transfer process to the next process, and the peeled pieces are scattered as dust. When such dust is scattered, it reattaches to the processed wafer and causes particles.
Therefore, in order to eliminate such dust generation, unnecessary processed films are removed from the edge portion by etching, polishing, or the like (see, for example, Patent Documents 1 to 3 below).

4A and 4B show a wafer edge polishing processing apparatus described in the following Patent Document 1, FIG. 4A is a process chart of edge polishing, and FIG. 4B is a schematic diagram of the polishing processing apparatus.
As shown in FIG. 4A, the edge polishing method using this wafer edge polishing processing apparatus includes a polishing step 30 for polishing the edge of the wafer, a first cleaning step 31 for cleaning the polished wafer with an acidic cleaning liquid, A second cleaning step 32 for cleaning with an alkaline cleaning liquid, and a drying step 33 for rotating the cleaned wafer at a high speed, spraying pure water to scatter the cleaning liquid and the pure water by centrifugal force, and drying.

Among these steps, the edge polishing apparatus that performs the polishing step 30 is disposed on a rotary table (not shown) that sandwiches and rotates the wafer and on the outer periphery of the rotary table, as shown in FIG. 4B. The polishing drums 40A to 40C are provided, and the polishing drums 40A to 40C are respectively bonded with flexible polishing pads 41A to 41C having compressibility on the surface thereof, and each polishing drum is attached to the wafer W. On the other hand, it is configured such that different portions of the wafer edge are polished by being pressed and contacted at different angles.
Specifically, the polishing drum 40A contacts the wafer W at 45 ° to polish the upper surface edge of the wafer, and the polishing drum 40B contacts the wafer W at 90 ° to polish the side edge of the wafer. 40C contacts the wafer W at 135 ° to polish the lower surface edge of the wafer. At the time of polishing, a polishing slurry is supplied between the polishing drums 40A to 40C and the wafer.

FIG. 5 is a top view schematically showing the peripheral unnecessary film removing apparatus described in Patent Document 2 below.
The unnecessary film removing apparatus 42 includes a chuck unit 43 that chucks the wafer W and rotates it around its axis, and a pair of bevel surface polishing members 44a that polish the upper and lower bevel surfaces of the wafer W held by the chuck unit. 44b, an end surface polishing member 45 that polishes the end surface of the wafer W, and a corner polishing member 46 that polishes these corner portions, and rotates the wafer W, and each polishing member is attached to the rotating wafer edge. By pressing and contacting, the wafer edge is polished to remove unnecessary films. Reference numerals 47 and 48 denote wafer transfer devices.

6A and 6B show a wafer cleaning apparatus described in Patent Document 3 below, in which FIG. 6A is a schematic perspective view, and FIG. 6B is a side view of a wafer supported by a support.
The wafer cleaning apparatus includes a plurality of rollers 49 that support and rotate the wafer W, and a roll 50 that contacts the wafer W rotated by the rollers and supplies a processing liquid. The structure is configured such that a chemical solution is supplied from a pipe 51 to the rotating roll 50 while being pressed against the back surface and cleaned. A sponge 52 is attached to the roller 49 in the groove, and a chemical solution is impregnated into the sponge in the roller using the surface tension of the chemical solution during the rotation of the wafer. Etching is performed.

Japanese Patent Laid-Open No. 2003-151925 (FIGS. 2, 3, and 6, paragraphs [0011] to [0013]) JP 2002-367939 A (FIGS. 1 and 2, paragraphs [0022] to [0025]) JP 2002-231676 A (FIG. 6, FIG. 7, paragraphs [0018] to [0022])

  According to the processing apparatuses described in Patent Documents 1 to 3, unnecessary film formation on the wafer edge portion can be removed. However, according to these polishing processing apparatuses, the region where the semiconductor element is formed on the wafer surface, Since the so-called device surface is also contaminated by the cleaning liquid, it may cause pattern defects. In addition, a cleaning and drying process is required in the next process, and it is essential to install a cleaning and drying apparatus to perform these processes. It has become.

  That is, the polishing apparatus described in Patent Document 1 includes a polishing process for polishing a wafer edge, a first cleaning process for cleaning the polished wafer with an acidic cleaning liquid, and then a second cleaning process for cleaning with an alkaline cleaning liquid. Further, each apparatus for performing a drying process for drying the cleaned wafer, that is, an edge polishing apparatus, a first cleaning apparatus, a second cleaning apparatus, and a drying apparatus, each of which is a partitioned processing chamber. The wafer is transferred to each processing chamber by an individual transfer device. According to this polishing apparatus, the first and second cleaning apparatuses, the drying apparatus, and a transfer device such as a robot arm for transferring the wafer between the apparatuses are required, and the polishing apparatus becomes large and expensive. In addition, since the processing apparatus described in Patent Document 2 has almost the same configuration, there is a similar problem.

  Further, in the processing apparatus described in Patent Document 3, a sponge is attached to a roller of a support that supports a wafer simultaneously with wafer backside processing, and a chemical solution is soaked into the sponge in the roller, and the sponge soaked with this chemical solution is used. The edge portion is etched by this. Since this apparatus also causes chemicals to adhere to the device surface of the wafer and the material peeled off from the edge or back surface may contaminate the device surface, a cleaning and drying device is separately provided in the same manner as the devices of Patent Documents 1 and 2 above. Necessary.

  The present invention has been made to solve such problems of the prior art, and the object of the present invention is to avoid the need for cleaning because the device surface does not come into contact with any chemical solution or slurry during edge polishing. An object of the present invention is to provide a bevel polishing method and a bevel polishing apparatus that can reduce the movement of the substrate, increase the processing efficiency, and can be realized in a small size at low cost.

In order to achieve the above object, the bevel polishing method according to claim 1 of the present application is a bevel polishing method using a bevel polishing means for polishing an edge portion including a bevel portion of a substrate to be processed.
A part of the edge portion is covered by the bevel polishing means, and the edge portion is polished by rotating the substrate to be processed one or more times in a state where the edge portion is covered, and the bevel polishing means Supply the cleaning liquid to the covered edge portion, and aspirate various substances such as debris released from the cleaning liquid and the substrate to be processed,
When the edge part polished by the bevel polishing means is pulled out of the bevel polishing means, the various substances are sucked to form a dry state.

In order to achieve the above object, the invention of a bevel polishing apparatus according to claim 2 of the present application holds a substrate to be processed and rotates the substrate to be processed and rotates the substrate to be processed. In a bevel polishing apparatus comprising: a bevel polishing unit that contacts an edge part including a bevel part of a substrate to be processed and polishes the edge part.
The bevel polishing part is mounted in the gap so that a part of the edge part of the substrate to be processed can be inserted and a gap is provided between the pair of first and second arm members. A polishing member that contacts and polishes the edge portion,
At least one of the first and second arm members is provided with a supply port for supplying a cleaning liquid to the polishing member, and in the vicinity of the polishing member, a droplet supplied to the substrate to be processed and the processing target A suction port for sucking and discharging various substances such as debris released from the substrate is provided.

  According to a third aspect of the present invention, in the bevel polishing apparatus according to the second aspect, the supply port is provided on the opposing surfaces of the first and second arm members, and the first The second arm member is located between the tip of the second arm member and the polishing member.

  Further, the invention according to claim 4 of the present application is the bevel polishing apparatus according to claim 2, wherein the suction port is provided at a position where a part of an edge portion of the substrate to be processed is inserted into the gap. It is provided in the position which opposes through a member, It is characterized by the above-mentioned.

  The invention according to claim 5 of the present application is the bevel polishing apparatus according to claim 2, wherein the polishing member is rotatably mounted on the first and second arm members and is connected to a rotation mechanism. It is characterized by being.

  The invention according to claim 6 of the present application is the bevel polishing apparatus according to claim 2, wherein the polishing member is a rotating grindstone, and the rotating grindstone is made of metal, metal oxide, metal nitride, metal carbide. And ceramics, synthetic resin, diamond, or a composite material thereof.

  The invention according to claim 7 of the present application is the bevel polishing apparatus according to claim 2, wherein the polishing member is one of a rigid body, a flexible member, a brush body, and a sponge body, or a composite material thereof. It is characterized by comprising.

  In the invention according to claim 8 of the present application, in the bevel polishing apparatus according to claim 6, the rotating grindstone is formed of a cylindrical body having a recess that contacts the edge of the substrate to be processed at the center. It is characterized by that.

  Further, the invention described in claim 9 of the present application is characterized in that the cleaning liquid supplied from the supply port of the bevel polishing apparatus according to claim 2 is pure water.

  Further, the invention according to claim 10 of the present application is the bevel polishing apparatus according to any one of claims 2 to 9, wherein a plurality of the bevel polishing portions are arranged along the outer periphery of the substrate to be processed. It is characterized by.

  By providing the above configuration, the present invention has the following excellent effects. That is, according to the first aspect of the present invention, when the edge portion of the substrate to be processed is polished by the bevel polishing means, the cleaning liquid is supplied, and polishing and cleaning are performed within the range of the bevel polishing means. Since all the substances that affect the substrate to be processed such as debris are sucked and dried, the edge part covered with the bevel polishing means of the substrate to be rotated is in a dry state when it comes out of this bevel polishing means. It has become. That is, the flat portion and the edge portion including the device surface not covered with the bevel polishing means are always kept in a dry state, and there is no splash of the spray from the bevel polishing means. A bevel polishing process can be performed.

  According to the invention of claim 2, the polishing of the edge portion of the substrate to be processed is processed in the bevel polishing portion and affects the device surface such as a droplet supplied by suction and a residue peeled off from the substrate. By discharging all such substances, the cleaning liquid or the like supplied to the polishing member is not scattered outside from the bevel polishing portion, and the device surface cleaning / drying process required in the prior art becomes unnecessary. As a result, a cleaning / drying apparatus and a conveying apparatus necessary for these processes are not required, the bevel polishing time can be greatly reduced, the apparatus can be easily downsized, and can be manufactured at low cost. In addition, when the edge portion polished in the bevel polishing portion exits the bevel polishing portion, all substances that affect the substrate to be processed such as the cleaning liquid and the polishing residue of the substrate to be processed are sucked by the suction port. Therefore, it is in a dry state. As a result, the cleaning liquid supplied to the edge portion in the bevel polishing portion does not reach the device surface of the substrate to be processed, and the entire surface of the substrate to be processed except the portion covered by the bevel polishing portion is in a dry state. Since the processing is performed while maintaining, a series of polishing processes can be performed without affecting the device surface or the like.

  According to the invention of claim 3, by providing the supply port at this position, the cleaning liquid can be efficiently supplied between the edge portion of the substrate to be processed and the polishing member.

  According to the invention of claim 4, by providing the suction port at this position, the used cleaning liquid and the polishing residue can be efficiently recovered without being scattered outside the edge portion of the substrate to be processed and discharged to the outside.

  According to the invention of claim 5, since the polishing member can be rotated and rotated by the rotating mechanism, the edge portion of the substrate to be processed can be efficiently polished.

  According to the sixth aspect of the present invention, since the rotating grindstone made of various materials is used as the polishing member, the material of the polishing member can be changed according to the state of the substrate to be processed, the polishing process, and the like. be able to.

  According to the invention of claim 7, the polishing member is polished according to the state of the edge portion by using not only a rigid body but also a flexible member made of a resin material, a buff or the like, a brush body, a sponge body or the like. Will be able to.

  According to the eighth aspect of the present invention, the polishing surface of the rotating grindstone can be formed in a shape that matches the oblique upper surface, the oblique lower surface, and the edge side surface of the edge portion of the substrate to be processed, and polishing can be performed efficiently and accurately.

  According to the ninth aspect of the present invention, it is possible to polish the edge portion without using a chemical solution as the cleaning solution. Therefore, the substrate can be processed without using an expensive chemical solution.

  According to the tenth aspect of the present invention, since a plurality of bevel polishing portions are disposed on the outer periphery of the substrate to be processed, the edge portion of the substrate to be processed can be efficiently polished and the processing speed can be increased. Moreover, it can grind | polish efficiently according to the state of an edge part by using a different grinding | polishing member with one apparatus.

  Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the embodiment shown below exemplifies a bevel polishing method and a bevel polishing apparatus for embodying the technical idea of the present invention, and the present invention is specified to the bevel polishing method and the bevel polishing apparatus. And other embodiments within the scope of the claims are equally applicable.

  1 is a schematic cross-sectional view showing a bevel polishing apparatus according to an embodiment of the present invention, FIG. 2 is a plan view showing the relationship between a bevel polishing unit and a wafer, FIG. 3 shows a bevel polishing unit, and FIG. A longitudinal sectional view and FIG. 3 (b) are plan views. The bevel polishing apparatus of FIG. 1 shows a state in which a part of the bevel polishing apparatus is cut at a position where a wafer rotating unit 4 connected to a rotation driving mechanism 5 described later is provided so that the structure can be easily understood. .

As shown in FIG. 1, the bevel polishing apparatus 1 includes a rotary table 2 that holds and rotates a wafer W substantially horizontally, and a bevel polishing unit that polishes an edge portion located at a part of the outer peripheral edge of the wafer W. 11, and the rotary table 2 and the bevel polishing unit 11 are accommodated in the processing cup 6.
As shown in FIG. 2, the bevel polishing unit 11 includes a support arm 12 having a predetermined length and a polishing head 13 coupled to one end of the support arm 12, and the other end of the support arm 12 is a support base (not shown). ) Is rotatably fixed. The support arm 12 is rotated by a driving mechanism (not shown) to bring the polishing head 13 into contact with the edge portion of the wafer W by pressing it with a predetermined pressure.

  The turntable 2 includes a holding table 3 on which the wafer W is placed, a rotating shaft 4 connected to the holding table 3, a rotation driving mechanism 5 connected to the rotating shaft 4 and rotated together with the holding table 3, have. As shown in FIG. 2, the holding table 3 has a disk shape smaller than the wafer W, and fixes the wafer W placed coaxially on the holding table 3 with a vacuum chuck.

The polishing head 13 includes a pair of first and second arm members 14, 18 that are extended from the support arm 12 and are opposed to each other in the vertical direction, and a horizontal direction is provided between the arm members 14, 18. A U-shaped groove 21 is formed in which a part of the edge portion of the wafer W is inserted, and a rotating grindstone 22 that is rotatably mounted is provided at the back of the U-shaped groove 21. Yes. Note that a plurality of streak-like irregularities may be provided on one surface of the first and second arm members 14 and 18 facing each other in order to rectify the air flow generated in the U-shaped groove 21.
The first arm member 14 and the second arm member 18 are respectively provided with supply ports 15, 15 through which the cleaning liquid is supplied, and further on the inner side of the rotating grindstone 22, A suction port 19 is provided so as to cover a part of the side wall surface. Note that the supply ports 15 and 15 provided in the first arm member 14 and the second arm member 18 are not necessarily located at positions facing each other with the wafer W interposed therebetween as shown in FIG. Is appropriately disposed at a position where it can be easily supplied.

The supply port 15 is connected to the cleaning liquid supply source 17a via the valve 16a in the middle of the supply path 16. For example, pure water is used as the cleaning liquid supplied from the cleaning liquid supply source 17a. In addition, ion water (functional water), ozone water, chemical liquid, etc. may be used as the cleaning liquid. The suction port 19 is connected to the suction / discharge facility 17b via the valve 20a in the middle of the suction path 20. The suction is adjusted by the valve 20a using the factory exhaust pressure. At this time, an auxiliary pump may be provided in the middle of the suction path 20.
Since this polishing head 13 has a predetermined width, when a part of the outer peripheral edge of the wafer W is inserted into the U-shaped groove 21, the upper and lower surfaces of the wafer edge are covered within a predetermined range. Since the polishing, cleaning, used cleaning liquid, and the like are sucked and discharged at the broken portion and returned to the dry state, the cleaning liquid can be prevented from jumping out to the device surface of the wafer W.

  Further, as shown in FIG. 3A, the opening width of the U-shaped groove 21 is between the upper surface or the lower surface of the wafer W and the first arm member 14 or the second arm member 18 when the wafer W is inserted. The gap D is set to 0.1 mm to 5.0 mm. Within this range, the device surface of the wafer W is not contaminated during polishing, and clogging due to polishing residue does not occur in the groove. Moreover, when confirmed by experiment, the said clearance gap D has preferable 0.5 mm-1.5 mm, and the result with the best around 1.0 mm was especially obtained also in this range.

  The rotating grindstone 22 has a conical shape with a constricted central portion, and a through hole is formed in the axial center direction of the rotating grindstone 22. The constricted portion 22 a of the rotating grindstone 22 has a curved shape so that the bevel portion and the edge side surface of the oblique upper surface and the oblique lower surface of the wafer W can be polished. The rotary grindstone 22 is fixed to the through hole by rotating the support shaft 22b, and both ends of the support shaft 22b are rotatably coupled to the first and second arm members 14 and 18. Further, one end of the support shaft 22b is connected to a rotation mechanism 24, and the rotation mechanism 24 is preferably a rotation mechanism that is rotated by air. The air rotation mechanism 24 is connected to an air supply source (not shown) via a pipe 25. Although not shown, the structure is designed so that the device surface is not affected by the discharge of air. Further, a suction port 19 whose tip is enlarged in diameter so as to cover the side wall surface of the rotating grindstone 22 is disposed on the surface opposite to the surface of the rotating grindstone 22 in contact with the wafer. The droplets and polishing residue adhering to the edge portions of the wafer 22 and the wafer W are sucked. Note that the shape of the suction port 19 is not limited to that shown in FIG. 3B. For example, the suction port 19 may have a shape with high suction efficiency, such as the center portion thereof being curved so as to be close to the constricted portion 22a of the rotating grindstone 22. It can be changed appropriately.

  As shown in FIG. 3B, the bevel polishing apparatus 1 is first placed on the holding table 3 of the rotary table 2 so that the center of the wafer W is positioned on the extension line of the axis of the rotary shaft 4. The wafer W is fixed by evacuating the mounting surface. Then, the wafer W is rotated counterclockwise by the rotation drive mechanism 5 connected to the rotation shaft 4. Next, the driving arm of the bevel polishing unit 11 rotates the support arm 12 to bring the polishing head 13 into contact with the edge portion of the wafer W.

  Subsequently, the rotating mechanism 24 is operated to rotate the rotating grindstone 22 counterclockwise, and at the same time, the cleaning liquid is supplied from the supply port 15, and the edge portion of the wafer is polished by the rotating grindstone 22 and used from the suction port 19. Aspirate the used cleaning liquid and polishing residue. By this suction, the spraying of the cleaning liquid, the cleaning of the edge part, and the drying process are performed in the contact polishing part between the wafer edge part and the rotating grindstone, and the cleaning liquid or the like is not scattered from the polishing head. If the drying is insufficient, one or more suction ports dedicated to drying are provided in the first and second arm members 14 and 18 and the wafer passes through the polishing head 13 in a completely dry state. You may make it come out. As described above, the bevel polishing apparatus of the present invention is characterized in that the wafer enters the polishing head in a dry state, wet polishes, and comes out in the dry state, that is, dry-in / dry-out.

  In this embodiment, a rotating grindstone is used as the polishing member. However, this grindstone is appropriately made of metal, metal oxide, metal nitride, metal carbide, ceramics, synthetic resin, diamond, or a composite material thereof. You can select and use. Moreover, although the case where the rotating grindstone which consists of a column-shaped rigid body with which the center part was narrowed as a polishing member was demonstrated here, as this polishing member, comparatively flexible flexible members, such as resin and a buff, a brush, Polishing may be performed using a sponge or a composite material thereof, and such a polishing member may be selected according to the state of the wafer edge. Further, the embodiment has been described in which one bevel polishing unit 11 is provided on the outer periphery of the wafer as shown in FIG. 2, but two or more as shown in FIG. 2 are provided. Also good. By arranging a plurality of bevel polishing portions 11, it becomes possible to increase the processing efficiency.

FIG. 1 is a schematic sectional view showing a bevel polishing apparatus according to an embodiment of the present invention. FIG. 2 is a plan view showing the relationship between the bevel polishing unit and the wafer, 3 shows a bevel polishing portion, FIG. 3 (a) is a longitudinal sectional view, FIG. 3 (b) is a plan view, 4 shows a conventional edge polishing method and polishing apparatus, FIG. 4 (a) is a process diagram of an edge polishing process, FIG. 4 (b) is a schematic diagram of the polishing apparatus, FIG. 5 is a top view schematically showing another peripheral unnecessary film removing apparatus of the prior art, FIG. 6 is a cross-sectional view of a wafer supported by a support tool showing still another conventional wafer cleaning apparatus.

Explanation of symbols

1 Bevel polisher 2 Rotary table (Processed substrate rotating part)
DESCRIPTION OF SYMBOLS 3 Holding stand 4 Rotating shaft 5 Rotation drive mechanism 6 Processing cup 11 Bevel grinding | polishing part 14 1st arm member 15 Supply port 16 Supply path 18 2nd arm member 19 Suction port 20 Suction path 21 U-shaped groove 22 Rotating grindstone (polishing member) )
W wafer (substrate to be processed)

Claims (10)

In the bevel polishing method using the bevel polishing means for polishing the edge portion including the bevel portion of the substrate to be processed,
A part of the edge portion is covered by the bevel polishing means, and the edge portion is polished by rotating the substrate to be processed one or more times in a state where the edge portion is covered, and the bevel polishing means Supply the cleaning liquid to the covered edge portion, and aspirate various substances such as debris released from the cleaning liquid and the substrate to be processed,
A bevel polishing method characterized in that when the edge portion polished by the bevel polishing means is pulled out of the bevel polishing means, the various substances are sucked to be in a dry state. A processed substrate rotating unit that holds and rotates the substrate to be processed, and a bevel polishing unit that contacts the edge portion including the beveled portion of the processed substrate held by the processed substrate rotating unit and polishes the edge portion. In a bevel polishing apparatus comprising:
The bevel polishing part is mounted in the gap so that a part of the edge part of the substrate to be processed can be inserted and a gap is provided between the pair of first and second arm members. A polishing member that contacts and polishes the edge portion,
At least one of the first and second arm members is provided with a supply port for supplying a cleaning liquid to the polishing member, and in the vicinity of the polishing member, a droplet supplied to the substrate to be processed and the processing target A bevel polishing apparatus, comprising a suction port for sucking and discharging various substances such as debris released from a substrate.   The supply port is provided on the opposing surface of the first and second arm members, and is located between the tip of the first and second arm members and the polishing member. The bevel polishing apparatus according to claim 2.   3. The bevel according to claim 2, wherein the suction port is provided at a position opposed to the position where a part of the edge portion of the substrate to be processed in the gap is inserted via the polishing member. Polishing equipment.   The bevel polishing apparatus according to claim 2, wherein the polishing member is rotatably attached to the first and second arm members and is connected to a rotation mechanism.   The polishing member is made of a rotating whetstone, and the rotating whetstone is made of metal, metal oxide, metal nitride, metal carbide, ceramics, synthetic resin, diamond, or a composite material thereof. Bevel polishing equipment.   The bevel polishing apparatus according to claim 2, wherein the polishing member is made of one of a rigid body, a flexible member, a brush body, and a sponge body, or a composite material thereof.   The bevel polishing apparatus according to claim 6, wherein the rotating grindstone is formed of a cylindrical body having a depression that comes into contact with an edge of a substrate to be processed in a central portion.   The bevel polishing apparatus according to claim 2, wherein the cleaning liquid supplied from the supply port is pure water.   The bevel polishing apparatus according to any one of claims 2 to 9, wherein a plurality of the bevel polishing units are arranged along the outer periphery of the substrate to be processed.

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