JP2007081365A - Heat treatment apparatus and heat treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To control a processing gas in a vertical thermal processing device to an appropriate temperature, and supply it to a substrate for good processing. <P>SOLUTION: A gas supply nozzle on which multiple gas supply holes are formed in a length direction is so provided, in a reaction vessel, as to stand up along a wafer boat. The gas supply nozzle comprises a double tube that contains, for example, an internal tube and external tube made of quartz. The space between the internal tube and the external tube acts as a supply path of processing gas. A preheating heater whose temperature is controlled independent of the heater of a thermal processing furnace is provided in the internal tube. When, for example, ozone gas is supplied, the temperature of the preheating heater is controlled so that an active species are formed when reaching the surface of the substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a heat treatment apparatus and a heat treatment method for carrying a plurality of substrates into a reaction vessel by a substrate holder and heat-treating, for example, film-forming the substrate with a processing gas supplied from a gas supply nozzle.

  A vertical heat treatment apparatus, which is one of semiconductor manufacturing apparatuses, holds a large number of substrates on a substrate holder in a shelf shape and carries them into a vertical reaction vessel. For example, the substrate gas is processed by a processing gas from a gas supply nozzle. Heat treatment is performed. In this type of heat treatment apparatus, for example, in order to supply the processing gas to the substrate at an appropriate temperature, to prevent the vaporized vapor from the liquefaction source from being reliquefied, or to react a part of the processing gas. For example, in order to generate a small amount of water vapor, a structure in which a processing gas is heated in advance outside the heat treatment furnace is known.

  On the other hand, when a silicon oxide film (SiO2 film) is formed as, for example, a gate insulating film or an interlayer insulating film, TEOS (tetraethyl orthosilicate) and ozone gas are alternately supplied into the reaction vessel, and TEOS is adsorbed on the substrate surface. Then, a technique for decomposing TEOS with active species of ozone gas to form a SiO2 molecular layer and laminating this molecular layer to form a silicon oxide film has been studied. According to this method, there is an advantage that satisfactory embedding can be performed even in a recess having a high aspect ratio, and the heat treatment temperature can be lowered, for example, 500 ° C. or lower.

  As an example of a method for carrying out this method, a gas supply nozzle is provided in the reaction vessel that extends along the substrate arrangement region and in which a large number of gas supply holes are formed at heights corresponding to the respective substrates. There is a method in which preheating means such as a tape heater is attached to a gas pipe outside the container and ozone gas heated in advance is supplied to the substrate via a gas supply nozzle. Here, in Patent Document 1, since ozone gas is completely decomposed in about 1 second at 300 ° C. or higher, if the ozone gas is preheated immediately before entering the treatment chamber, the ozone gas is efficiently decomposed into active species. It is described that the surface treatment speed is improved.

  By the way, activated species obtained by activating ozone gas are deactivated in a very short time (considered to be about 1 / tens of thousands of seconds), so if you want to increase the efficiency of the reaction, In order to generate active species on the substrate, it is necessary to determine parameters such as the gas flow rate and temperature so that the timing at which most active species are generated is on the substrate. In other words, if the timing of ozone gas activation (generation of active species) is too early or too late, an efficient process cannot be performed, so it is necessary to optimize the timing. What is necessary is just to adjust the temperature when ozone gas comes out from the gas supply hole of this to the optimal temperature.

  When trying to give the heating energy necessary for activation to the ozone gas, the energy involves the heating temperature and heating time of the gas, so the magnitude of the thermal energy given by the time the gas supply nozzle is exited. Depends on the gas flow rate. In the method in which the gas is preheated outside the reaction vessel, the gas is preheated outside and subsequently receives heat in the reaction vessel when the gas passes through the gas supply nozzle. Since it is determined according to the set temperature in the reaction vessel, it is extremely difficult to adjust the gas at the time of exiting the gas supply nozzle to an appropriate temperature, and cannot be optimized in practice.

  Also, the external preheating method as in Patent Document 1 is not a good solution from the viewpoint of worker safety because the preheating means is provided in the pipe located in the maintenance area and there is a high temperature part.

  Further, a gas obtained by vaporizing a material having a high boiling point such as a material in which a metal DPM complex is dissolved in a solvent or an organic metal material that becomes liquid at room temperature (hereinafter, referred to as a high boiling point raw material gas) is supplied into the reaction vessel. There is a case. However, the high boiling point raw material gas has a problem that it immediately liquefies and condenses at room temperature.

  Therefore, in Patent Document 1, a method for preventing liquefaction and condensation of the high-boiling-point raw material gas by covering a gas pipe outside the reaction vessel with a panel heater or a tape heater from the outside is taken. Since the base end portion of the gas supply nozzle drawn out is relatively low temperature, when the high boiling point raw material gas passes through this portion, the raw material gas is solidified, and dust generation or film formation speed is reduced in the reaction vessel. Causes a drop. In addition, when adopting a structure in which the base end portion of the gas supply nozzle is passed through the lower flange portion of the reaction vessel, the through region is long, and this region is not heated by the tape heater on the gas pipe side. The gas is likely to condense.

JP-A-6-84843: paragraphs 0007, 0009

  The present invention has been made under such circumstances, and an object of the present invention is to provide a heat treatment apparatus and a heat treatment method capable of adjusting a processing gas to an appropriate temperature and supplying it to a substrate to perform good processing. There is to do.

The present invention comprises a reaction vessel, a substrate holder that holds a plurality of substrates arranged in the length direction of the reaction vessel, and a heating means provided around the reaction vessel, and the substrate holder In a heat treatment apparatus for carrying out heat treatment on a substrate by supplying a process gas into the reaction container and
A gas supply nozzle provided in the reaction vessel for supplying a processing gas to the substrate;
A preheating heater provided in the gas supply nozzle for preheating the gas in the gas supply nozzle is provided.

Specific embodiments of the present invention are listed below.
In the gas supply nozzle, for example, a large number of gas supply holes are arranged along the arrangement region of the substrate in the reaction vessel.

A temperature control unit for controlling the temperature of the preheating heater is provided independently of the heating means.
The gas supply nozzle is provided with a double pipe including an inner pipe and an outer pipe. The gas supply nozzle is configured as a process gas supply path between the inner pipe and the outer pipe, and a preheater heater is provided in the inner pipe.

  The double tube is made of quartz, and the inner tube passes through the wall of the outer tube inside the reaction vessel and is drawn out of the outer tube as a feeder line outlet tube. The outer tube and the feeder line outlet tube are formed in the reaction vessel, respectively. The gas supply port and the heater port are extended.

The gas supply nozzle includes a first portion extending in the length direction of the reaction vessel and a second portion extending in the radial direction of the reaction vessel from the base end side of the first portion and penetrating the reaction vessel.
The inner pipe is divided between a first part and a second part, and the feeder lead-out pipe provided in the first part is drawn out of the outer pipe on the base end side of the first part,
A preheater is also provided in the inner pipe in the second portion.

  The base end of the gas supply nozzle passes through the reaction vessel and is drawn out of the reaction vessel, and a preheater for preheating the portion of the base end passing through the reaction vessel is provided.

  A temperature detection unit for detecting the temperature in the gas supply nozzle and a temperature control unit for controlling the temperature of the preheating heater based on the temperature detection value detected by the temperature detection unit are provided.

  The processing gas is activated at least in the reaction vessel, and in this case, means for detecting the concentration of active species in the gas supply nozzle or the concentration of active species in the vicinity of the gas supply port of the gas supply nozzle, and detection of this means It is preferable to have a configuration including a temperature control unit that controls the temperature of the preheating heater based on the result. The processing gas may be a gas obtained by vaporizing a liquid material having a high boiling point (a boiling point of 290 ° C. (pressure 0.1 Torr or more)).

The heat treatment method of the present invention includes a step of carrying a substrate holder holding a plurality of substrates arranged in a reaction container,
Heating the inside of the reaction vessel by a heating means provided around the reaction vessel;
Supplying a processing gas into the reaction vessel from a gas supply nozzle provided in the reaction vessel;
And a step of heating a processing gas in the gas supply nozzle by a preheating heater provided in the gas supply nozzle.

  According to the present invention, since the preheating heater is provided in the gas supply nozzle, the temperature can be set independently of the temperature in the reaction vessel while the processing gas passes through the gas supply nozzle. Accordingly, the processing gas can be supplied to the processing atmosphere at an appropriate temperature. For example, when the processing gas is activated and the surface of the substrate is processed with the active species, the temperature of the preheating heater can be adjusted so that the active species can be generated at a timing suitable for the processing of the substrate. Can be processed. Further, for example, if a gas supply nozzle is formed by a double tube made of quartz, a preheating heater is accommodated in the inner tube, and the power supply line of the heater is drawn out through the inner tube, contamination from the heater components and the power supply line will occur. An object can be prevented from being mixed into the processing gas, and thus contamination of the substrate can be suppressed.

(First embodiment)
An embodiment in which the heat treatment apparatus according to the present invention is applied to a vertical heat treatment apparatus will be described. This vertical heat treatment apparatus is an apparatus for carrying out the heat treatment method of the present invention. In FIG. 1, reference numeral 10 denotes a heat treatment furnace. The reaction tube 1 has a double tube structure made of, for example, transparent quartz, and includes an inner tube 1a having both ends open and an outer tube 1b having an upper end closed. 1 is provided with a heating means provided so as to surround 1, for example, a heater (main heater) 2 made of a resistance heating body. The heating amount of the heater 2 is controlled by controlling the supply power via the power supply unit 22 by the temperature controller 21. In an actual apparatus, the heater 2 is provided along the inner wall of the furnace body including a heat insulating material (not shown), and the heat treatment atmosphere in the reaction tube 1 is divided into a plurality of upper and lower parts, and each zone is independently set to each temperature controller. Although it is configured to be divided into a plurality of stages so that the heating can be controlled by the above, it is schematically illustrated in the figure.

  In FIG. 1, reference numeral 3 denotes a wafer boat which is a substrate holding unit that holds a plurality of semiconductor wafers (hereinafter referred to as wafers) W in a shelf shape along the length direction of the reaction tube 1. The wafer boat 3 is lifted by the boat elevator 31 and is carried into the heat treatment furnace 10.

  The lower side of the inner pipe 1a and the outer pipe 1b is supported by a cylindrical manifold 11, and the manifold 11 is a vacuum pump which is a vacuum exhaust means so as to exhaust from between the inner pipe 1a and the outer pipe 1b. An exhaust pipe 13 having one end connected to 12 is connected. In this example, a reaction vessel is constituted by the reaction tube 1 (the inner tube 1 a and the outer tube 1 b) and the manifold 11. The lower end opening of the manifold 11 is closed by a lid 32, and a rotating shaft 34 that is rotated by, for example, a drive unit 33 is provided between the lid 32 and the wafer boat 3. Yes. In this example, the rotating shaft 34 is surrounded by a cylindrical body 35 on the lid 32 to form a heat insulating region. Instead of such a heat insulating structure, a rotating table is provided on the lid 32, and A structure in which the heat insulating unit is mounted on the turntable and the wafer boat 3 is mounted thereon may be employed. Reference numeral 23 denotes a base plate, and a furnace body and a manifold 11 (not shown) are fixed to the base plate 23.

  A first gas supply nozzle 4 and a second gas supply nozzle 5 are inserted into the manifold 11. Specifically, the first gas supply nozzle 4 has a proximal end connected to a pipe 41 at a port (not shown) in the manifold 11, extends horizontally from the port, and opens at the distal end as a gas supply port. The pipe 41 is connected to a TEOS supply source 43 via a gas supply control device group 42 such as a valve and a flow meter. The TEOS supply source 43 includes a liquid source of TEOS that is an organic source, a vaporizer, and the like.

  The second gas supply nozzle 5 includes a horizontal portion and a vertical portion extending in the arrangement direction of the wafers W. The vertical portion includes an inner tube 61 and an outer tube 62 made of, for example, quartz as shown in FIG. A heavy pipe is provided, and the space between the inner pipe 61 and the outer pipe 62 is configured as a processing gas supply path. In the inner pipe 61, as shown in FIG. 3, the preheater 6 and the temperature detector 7 such as a thermocouple are provided. And are provided.

  In this example, the preheater 6 passes through the resistance heating wire 64 from the base end side to the tip end side in the cylindrical body 63 made of ceramics, for example, alumina, and the resistance heating wire 64 from the tip end side to the outer peripheral surface of the cylindrical body 63. Along the lower end side (base end side), it is configured. The inner tube 61 is bent in an L shape, and further penetrates the outer tube 62 and is drawn out as a feed line outlet tube 61a horizontally. A conducting wire continuing to the resistance heating wire 64 on the lower end side of the cylindrical body 63 is a heater power supply wire 64a, which is wired from the inner tube 61 to the inside of the power supply wire outlet tube 61a and connected to an external power supply terminal. Further, a temperature detection power supply line 71 for supplying power to the temperature detection unit 7 is also wired inside the power supply line lead-out pipe 61a and drawn out, but is not shown in FIG.

  On the other hand, the lower end portion (base end portion) of the outer tube 62 is bent horizontally as shown in FIGS. 2 and 4, and further bent toward the wall surface side of the manifold 11 to extend horizontally. That is, the outer pipe 62 and the feeder lead-out pipe 61a are arranged side by side in a substantially horizontal direction. As shown in FIGS. 4 and 5, the gas supply port 50 and the heater formed on the side wall of the manifold 11, respectively. It inserts in the port 60 for airtight through the seal member which is not illustrated. A pipe 51 is externally fitted and connected to the gas supply port 50, so that the gas supply path in the gas supply nozzle 5 communicates with the pipe 51. The pipe 51 is connected to an ozone gas (O3 gas) supply source 53 via a gas supply control device group 52 such as a valve and a flow meter. The gas supply nozzle 5 has a number of gas supply holes 54 at positions corresponding to the wafers W on the wafer boat 3 along the length of the tube wall of the outer tube 62 (along the region where the wafers W are arranged). A gas injector is formed by drilling (not visible in FIG. 2).

  Returning to FIG. 1, the heater power supply line 64 a of the preheating heater 6 is connected to a power supply unit 66 whose supply power is controlled by a temperature controller 65 that is a temperature control unit. The temperature detection power supply line 71 (see FIGS. 2 to 4) is connected to the temperature controller 65 to feed back the temperature detection value of the preheating heater 6. Therefore, the amount of heat generated in the preheating heater 6 is controlled by the temperature controller 65 based on the temperature detection value of the temperature detection unit 7 and the set temperature. That is, the preheating heater 6 provided in the second gas supply nozzle 5 is temperature-controlled by the temperature controller 65 independently of the heater 2 for heating the processing atmosphere in the reaction tube 1, for example, from 300 ° C. to 1000 ° C. The inside of the second gas supply nozzle 5 can be heated in the range of ° C.

  Although not shown in FIG. 1, the manifold 11 is provided with a nozzle for supplying an inert gas such as nitrogen gas in addition to the gas supply nozzles 4 and 5.

  Next, an example of a heat treatment method performed using the above-described vertical heat treatment apparatus will be described with reference to a case where an SiO 2 film is formed using, for example, TEOS and ozone gas which are organic sources as a film forming gas. First, a predetermined number of wafers W, which are substrates, are held in the wafer boat 3 and the boat elevator 33 is lifted to load (load) the reaction vessel 1 and the manifold 11 into the reaction vessel.

  After the wafer boat 3 is loaded and the lower end opening of the manifold 11 is closed by the lid 32, the temperature in the reaction vessel is raised to, for example, 500 ° C., and an exhaust valve (not shown) is opened to open the reaction vessel. The inside is evacuated to a predetermined degree of vacuum, for example, 666 Pa by the vacuum pump 12 through the exhaust pipe 13.

Then, for example, TEOS vapor and ozone gas are alternately supplied from the TEOS supply source 43 and the ozone gas supply source 53 into the reaction vessel at a predetermined flow rate. For example, TEOS is supplied into the reaction vessel through the first gas supply nozzle 4 for 1 second, then the supply of TEOS is stopped, and nitrogen gas that is an inert gas is purged from a gas supply nozzle (not shown). Subsequently, the purge of nitrogen gas is stopped, ozone gas is supplied into the reaction vessel through the second gas supply nozzle 5 for 1 second, then supply of ozone gas is stopped, and nitrogen gas is further purged.
The supply of ozone gas will be described in detail. The ozone gas flows from the ozone gas supply source 53 through the gas supply control device group 52 through the gas supply control device group 52 through the pipe 51 and is supplied through the gas supply port 50 of the manifold 11. After entering the extended portion of the outer tube 62 of the nozzle 5, it rises between the outer tube 62 and the inner tube 61. On the other hand, power is supplied from the power supply unit 66 to the preheating heater 6 (see FIG. 3) via the power supply line 64a, and the preheating heater 6 generates heat. Therefore, the ozone gas is preheated while rising in the gas supply nozzle 5, and is heated to the temperature set by the temperature controller 65 by temperature control based on the temperature detection value of the temperature detection unit 7 and the set temperature, and The gas is blown into the processing atmosphere from each gas supply hole 54 and supplied to the surface of the wafer W.

  The ozone gas is activated when predetermined heat energy is applied, and generates active oxygen, which is an active species. Therefore, the temperature controller 65 controls the ozone gas according to the flow rate of the ozone gas so that the generation of the active species occurs on the surface of the wafer W. Preheated at different temperatures. The optimum relationship between the flow rate of the ozone gas and the preheating temperature can be obtained from the evaluation result of the film forming process in which, for example, parameters are changed in advance to analyze the film quality and film thickness of the wafer W.

  Since the ozone gas is preheated at an appropriate temperature in this way, it is activated when it reaches the wafer W from the gas supply nozzle 5, and the TEOS already adsorbed on the wafer W is decomposed by active oxygen to generate SiO2. The molecular layer is formed, and this process is repeated to laminate the molecular layer and form a silicon oxide film.

  During these series of steps, the wafer boat 3 is rotated by the drive unit 33. After the film formation process, the inside of the reaction vessel 1 is evacuated, purge is started by supplying nitrogen gas as a purge gas, the pressure in the reaction vessel 1 is returned to atmospheric pressure, and the wafer boat 3 is unloaded from the reaction vessel. (Unload).

  According to the above-described embodiment, since the preheating heater 6 is provided in the second gas supply nozzle 5, the temperature of the ozone gas is independent of the temperature in the reaction vessel while passing through the gas supply nozzle 5. Can be set. Therefore, by adjusting the preheating temperature suitable for the flow rate immediately before the ozone gas is blown into the processing atmosphere, it is possible to give the ozone gas appropriate heat energy, so that the ozone gas can be activated at an appropriate timing. . When the ozone gas is preheated outside the reaction vessel as in Patent Document 1, the heat energy added in the reaction vessel is added in addition to the heat energy supplied by the external preheating unit, and the latter heat energy is Since it depends on the temperature in the reaction vessel, it is impossible to give appropriate heat energy to the ozone gas.

  On the other hand, according to the above-described embodiment, the activation of ozone gas can be performed on the surface of the wafer W, and this active species is formed even if the lifetime of the generated active species is extremely short. The film can be sufficiently utilized for film processing, whereby efficient and good film formation can be performed. And by using the active species obtained from ozone gas in this way, the temperature of the film forming process can be lowered.

  In addition, the gas supply nozzle 5 is formed by a double tube made of quartz, the preheater 6 is accommodated in the inner tube 61, the inner tube 61 is separated from the outer tube in the reaction vessel, and is continuous with the inner tube 61. The power supply line 64a of the preheating heater 6 and the temperature detection power supply line 71 are drawn out to the outside by the power supply line outlet pipe 61a. For this reason, the gas flow path is separated from the preheating heater 6 and the power supply lines 64a and 71, and contamination from the preheating heater 6 and the power supply lines 64a and 71 can be avoided. For this reason, the contamination of the substrate can be suppressed, and since the separation is performed in the reaction vessel, it is easy to ensure airtightness.

  Furthermore, by providing a preheating heater in the reaction vessel, it is not necessary to provide a high-temperature part in the maintenance area as compared with the case where it is arranged outside, so that there is an advantage that the safety of the operator can be ensured.

The present invention is not limited to the activation of ozone gas. NH2 ^* is obtained by activating ammonia or activating N2O and hydrogen, and a SiN film (silicon nitride film) is formed by this radical. This is an effective structure for cases. Further, even when the processing gas is supplied into the reaction vessel as it is without being activated, it is effective because the processing gas can be set at an appropriate temperature to react on the wafer.

    Further, with regard to the lower structure of the second gas supply nozzle 5, for example, as shown in FIG. 6, the position where the inner tube 61 is pulled out from the outer tube 62 is made higher than the bent position of the outer tube 62, and the drawn feeder line is derived You may comprise so that the pipe | tube 61a and the outer pipe | tube 62 may be located in a line with an up-down direction.

  Also, the structure of the preheating heater 6 is not limited to the above-described example. For example, a structure in which a single pipe is used and a heating element on a mesh is embedded in the pipe wall may be used.

  Further, as shown in FIG. 7, the second gas supply nozzle 5 is divided into a plurality of, for example, a short nozzle 5A, a middle nozzle 5B, and a long nozzle 5C. The supply of gas to the upper side, the center, and the lower side is shared, and the preheating temperature is controlled independently of each other by the temperature controllers 65A to 65C via the power supply units 66A to 66C. You may make it perform.

  In the present invention, when the processing gas is activated and supplied to the substrate, active species detection means may be provided, and preliminary heating control may be performed based on the detection result. For example, the concentration of active species in the gas supply nozzle that supplies the processing gas to be activated may be detected, or the concentration of active species in or near the gas supply port of the gas supply nozzle may be detected. . Depending on the concentration detection value of the active species, for example, temperature control may be performed such that the preheating temperature is increased when the concentration is low, and conversely, the preheating temperature is decreased when the concentration is high. There can be many active species. Note that such control is merely an example, and in practice, the control method is determined in consideration of the lifetime of the active species.

  For example, when the ozone gas is activated as in the above-described embodiment, the active oxygen is deactivated in an extremely short time, so that it is necessary to activate the substrate on or just before the substrate. For this reason, generation of active oxygen in the gas supply nozzle or in the vicinity of the gas supply port must be avoided. For this purpose, it is preferable to employ the configuration shown in FIG. 8, for example.

  In FIG. 8, 8 is a platinum wire corresponding to a means for detecting active species, and is wired along the gas supply nozzle 5 in the vicinity of the gas supply port 54 of the gas supply nozzle 5. The vicinity of the gas supply port 54 is, for example, between the gas supply port 54 and a position that is outside the wafer boat 3 and does not hinder the elevation of the wafer boat 3. The platinum wire 8 is connected to the current detection unit 81 outside the reaction vessel, and the control unit 82, which is a host computer, controls the preheating temperature controller 65 based on the detection result of the current detection unit 81. Send.

As a specific control method, since the current flows when the active oxygen touches the platinum wire, the control unit 82 instructs the temperature controller 65 to lower the set temperature. The range of decrease in the set temperature may be determined in advance according to, for example, the detected current value, but may be decreased by a predetermined temperature regardless of the detected value based on the detection of the current. The control unit 82 may adjust the flow rate of ozone gas based on the current detection result. In this case, when an electric current is detected, control is performed so as to increase the flow rate of ozone gas. Note that the conductive path member for detecting the active species is not limited to the platinum wire, and any material can be used as long as the current flows when the active species contacts.
(Second Embodiment)
Further, another embodiment of the present invention will be described. In this embodiment, a material obtained by dissolving, for example, a metal DPM (dipiva royal methanato) complex in a solvent as a processing gas in the reaction vessel 1 or an organic metal material that becomes liquid at room temperature, for example, tetrakisdimethylamide hafnium (Hf [N A gas (raw material gas) obtained by vaporizing a high boiling point raw material such as (CH ₃ ) ₂ ] ₄ ) is supplied. In the following, parts having the same configurations as those of the previous embodiment are denoted by the same reference numerals, and description thereof is omitted. In addition, a high boiling point raw material is a raw material with a boiling point of 190 degreeC (normal pressure) or more, for example.

  9 in FIG. 9 is a gas supply nozzle for supplying the source gas into the reaction vessel 1. The gas supply nozzle 9 is formed in an L shape including a vertical portion (first portion) and a horizontal portion (second portion), and the vertical portion includes, for example, an inner tube 91 and an outer tube 92 made of quartz. It has a double pipe. Between the inner pipe 91 and the outer pipe 92 is configured as a raw material gas supply path, and the inner pipe 91 is provided with a preheater 6 and a temperature detector 7 such as a thermocouple as shown in FIG. A gas supply port 93 is formed on the upper end side of 92.

  The inner pipe 91 penetrates the outer pipe 92 from the base end portion of the vertical portion, extends in the horizontal direction, and is drawn out through the heater port 60 as a feed line outlet pipe 91a. Further, a heater power supply line 64a and a temperature detection electric wire 71 provided in the inner pipe 91 are wired and drawn out in the power supply line lead-out pipe 91a.

  On the other hand, the lower end side of the outer tube 92 is bent horizontally, and further bent to the wall surface side of the manifold 11 to extend horizontally. That is, the outer tube 92 and the feeder lead-out tube 91a are arranged side by side in the horizontal direction, and are inserted into the gas supply port 50 formed on the side wall of the manifold 11 in an airtight manner via a seal member (not shown). Has been.

  A pipe 41 is screwed into the gas supply port 50 from the outside. The distal end portion of the pipe 41 and the distal end portion on the lower end side of the outer tube 92 are fitted or abutted in the gas supply port 50. The pipe 41 is connected to a liquid source supply source 101 via a gas supply control device group 100 such as a valve, a flow meter, and a vaporizer 102. The proximal end side of the pipe 41 is bent in an L shape.

  Further, as shown in FIG. 9, an inner tube 91b is provided inside the lower end side (horizontal portion) of the outer tube 92 to form a double structure, and there is a gap between the inner tube 91b and the outer tube 92. The inner pipe 91b is provided with a preheater 6 and a temperature detector 7, such as a thermocouple, as shown in FIG. 3 described above. The inner pipe 91b penetrates the wall of the pipe 41 and is drawn out horizontally as a feed line lead-out pipe 91c. Inside the feed line lead-out pipe 91c, a heater feed line 64a provided in the inner pipe 91b and a temperature detection are provided. The electric wire 71 is wired and pulled out.

  The two heater power supply lines 64a shown in FIG. 9 are connected to a power supply unit 66 whose supply power is controlled by, for example, separate temperature controllers 65 shown in FIG. Further, the two temperature detection power supply lines 71 shown in FIG. 9 are connected to, for example, separate temperature controllers 65 to feed back the temperature detection value of the preheating heater 6. Therefore, the preheater 6 is controlled in the amount of heat generated by each temperature controller 65 based on the temperature detection value of the temperature detector 7 and the temperature setting value assigned to each heater. That is, the preheating heater 6 provided in the vertical portion and the horizontal portion of the gas supply nozzle 9 is temperature-controlled by each temperature controller 65 independently of the heater 2 that heats the processing atmosphere in the reaction vessel 1, for example, The vertical part and horizontal part of the gas supply nozzle 9 can be heated in the range of room temperature to 350 ° C.

  Here, the supply of the raw material gas will be described in detail. The liquid raw material is vaporized from the supply source 101 by the vaporizer 102 in the gas supply device group 100 to become a gas, and flows in the pipe 41 at a preset flow rate. And between the inner pipe 91b. Then, the gas supply nozzle 9 enters between the outer tube 92 and the inner tube 91 b in the horizontal portion, and rises between the outer tube 92 and the inner tube 91 in the vertical portion of the gas supply nozzle 9. On the other hand, electric power is supplied from the power supply unit 66 to the preheating heaters 6 provided in the vertical and horizontal portions of the gas supply nozzle 9 via the power supply line 64a, and the preheating heater 6 generates heat. For this reason, since the source gas is preheated while flowing through the horizontal portion and the vertical portion of the gas supply nozzle 9, the gas is supplied into the reaction vessel 1 from the gas supply port 93 without condensing.

  As described above, since the preheater 6 is provided in the vertical portion and the horizontal portion of the gas supply nozzle 9, the raw material gas is reliquefied while being discharged from the gas supply port 93 through the gas supply nozzle 9. There is no fear. In particular, since the gas is heated by the preheater 6 also in the gas supply port 50 and the flange portion of the reaction vessel 1, there is no fear that a part of the raw material gas is solidified. Accordingly, it is possible to suppress the generation of dust and the film formation rate in the reaction vessel 1. Further, in the L-shaped outer tube 92, the inner tube 91 is drawn out from the base end (lower end) of the vertical portion, and the inner tube 91b is separately provided for the horizontal portion, so that glass processing is easy to perform. It has become.

  Further, in addition to the gas supply nozzle 9 described with reference to FIG. 9, as shown in FIG. 10, the horizontal portion of the inner pipe 91b is connected to a power supply line lead-out pipe 91a drawn out from the vertical portion, thereby supplying the power supply line. You may make it pull out an electric power feeding line etc. collectively through the derivation | leading-out pipe | tube 91a.

It is a longitudinal cross-sectional view which shows the vertical heat processing apparatus which is embodiment of this invention. It is a schematic perspective view which shows the gas supply nozzle provided in said vertical heat processing apparatus. It is a schematic perspective view which shows the preheating heater provided in the gas supply nozzle. It is a schematic perspective view which shows the structure which attaches a gas supply nozzle to a manifold. It is sectional drawing which shows the structure which joined the outer tube | pipe of the gas supply nozzle to the gas supply port of the manifold. It is a schematic perspective view which shows the other structural example of a gas supply nozzle. It is a longitudinal cross-sectional view which shows the vertical heat processing apparatus which is other embodiment of this invention. It is a schematic perspective view which shows the principal part of other embodiment of this invention. It is a schematic perspective view which shows the principal part of other embodiment of this invention. It is a schematic perspective view which shows the principal part of other embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Reaction tube 13 Exhaust tube 2 Heater 21 Temperature controller 3 Wafer boat W Wafer 4 1st gas supply nozzle 5, 5A-5C 2nd gas supply nozzle 54 Gas supply hole 6 Preheating heater 61 Inner tube 61a Feeding line extraction tube 62 Outer tube 63 Tubular body 64 Resistance heating wire 64a Feeding wire 65, 65A to 65C Temperature controller 7 Temperature detector 8 Platinum wire 81 Current detector

Claims (16)

A reaction vessel, a substrate holder for arranging and holding a plurality of substrates along the length of the reaction vessel, and heating means provided around the reaction vessel, and the substrate holder is placed in the reaction vessel In a heat treatment apparatus for carrying in heat treatment on a substrate by supplying a processing gas into a reaction vessel and
A gas supply nozzle provided in the reaction vessel for supplying a processing gas to the substrate;
A heat treatment apparatus, comprising: a preheater provided in the gas supply nozzle for preheating the gas in the gas supply nozzle.   The heat treatment apparatus according to claim 1, wherein the gas supply nozzle has a large number of gas supply holes arranged along a substrate arrangement region in the reaction vessel.   The heat treatment apparatus according to claim 1, further comprising a temperature control unit that controls the temperature of the preheater independently of the heating unit.   The gas supply nozzle is provided with a double pipe including an inner pipe and an outer pipe, and is configured as a processing gas supply path between the inner pipe and the outer pipe, and a preheating heater is provided in the inner pipe. The heat treatment apparatus according to any one of claims 1 to 3.   The double tube is made of quartz, and the inner tube passes through the wall of the outer tube inside the reaction vessel and is drawn out of the outer tube as a feeder line outlet tube. The outer tube and the feeder line outlet tube are formed in the reaction vessel, respectively. 5. The heat treatment apparatus according to claim 4, wherein the heat treatment apparatus extends to the gas supply port and the heater port. The gas supply nozzle includes a first portion extending in the length direction of the reaction vessel and a second portion extending in the radial direction of the reaction vessel from the base end side of the first portion and penetrating the reaction vessel.
The inner pipe is divided between a first part and a second part, and the feeder lead-out pipe provided in the first part is drawn out of the outer pipe on the base end side of the first part,
The heat treatment apparatus according to claim 5, wherein a preheater is also provided in the inner pipe in the second portion.   The gas supply nozzle has a base end portion that passes through the reaction vessel and is drawn to the outside, and a preheating heater that preheats a portion of the base end portion that passes through the reaction vessel is provided. The heat treatment apparatus according to any one of claims 1 to 5.   2. A temperature detection means for detecting the temperature in the gas supply nozzle, and a temperature control section for controlling the temperature of the preheating heater based on the temperature detection value detected by the temperature detection means. The heat processing apparatus as described in any one of thru | or 7.   The heat treatment apparatus according to claim 1, wherein the processing gas is activated at least in the reaction vessel.   A means for detecting the concentration of the active species in the gas supply nozzle or the concentration of the active species in the vicinity of the gas supply port of the gas supply nozzle, and a temperature control unit for controlling the temperature of the preheating heater based on the detection result of the means are provided. The heat treatment apparatus according to claim 9.   The heat treatment apparatus according to any one of claims 1 to 8, wherein the processing gas is obtained by vaporizing a liquid raw material. Carrying a substrate holder holding a plurality of substrates arranged in a reaction container;
Heating the inside of the reaction vessel by a heating means provided around the reaction vessel;
Supplying a processing gas into the reaction vessel from a gas supply nozzle provided in the reaction vessel;
And a step of heating a processing gas in the gas supply nozzle by a preheater provided in the gas supply nozzle.   13. The heat treatment method according to claim 12, wherein the processing gas in the gas supply nozzle is supplied to the processing atmosphere from a number of gas supply holes formed along the substrate arrangement region in the reaction vessel.   The process gas is preheated by a preheater provided in the inner pipe while flowing between the inner pipe and the outer pipe constituting the gas supply nozzle. The heat treatment method as described.   The heat treatment method according to claim 12, wherein the processing gas is activated and supplied to the substrate. The heat treatment method according to any one of claims 12 to 14, wherein the treatment gas is a vaporized liquid raw material.

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