JP2007073284A - LIGHT EMITTING DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting device capable of easily and surely preventing a positional deviation between an inorganic partition wall and an organic partition wall which partition a pixel region.
In the method for manufacturing a light emitting device 1, a step of forming a first electrode 23 on a substrate 20, a step of forming an inorganic insulating material layer 71 on the first electrode 23, and a step on the inorganic insulating material layer 71 are provided. Forming a first partition 74 made of an organic material at a predetermined position; etching the inorganic insulating material layer 71 using the first partition 74 as a mask to form a second partition 72; and exposing the first electrode 23; A step of forming an organic functional layer 60 on the first electrode 23 by disposing an organic functional material in a region surrounded by the first partition wall 74 and the second partition wall 72 by a droplet discharge method; Forming the second electrode 50.
[Selection] Figure 5

Description

  The present invention relates to a method for manufacturing a light emitting device and an electronic apparatus.

  In recent years, attention has been paid to an organic EL device including an organic electroluminescence (hereinafter referred to as organic EL) element. The organic EL element is configured to have an organic EL layer, that is, a light emitting layer between a pair of electrodes facing each other. In particular, when performing full color display, red (R), green (G), blue ( B) has a light emission wavelength band corresponding to each color, and thus includes a light emitting layer (organic EL layer) that emits light of each color.

As for the light emitting layer, a technique is known in which a predetermined amount of a polymer material is arranged at a desired position using a droplet discharge method. In the case where the polymer material is arranged by the droplet discharge method in this way, a method in which the pixel region for forming the light emitting layer is previously surrounded by a partition and the polymer material is favorably disposed in the partition. Has been done.
At this time, when the shape of the partition wall changes and the area in the pixel region surrounded by the partition wall changes, the film thickness of the functional layer including the light emitting layer formed in the partition wall varies. A difference arises in the light emission characteristic of each organic EL layer. As a result, the display quality of the organic EL device is impaired.
Therefore, as disclosed in Patent Document 1 and the like, there is a technique of preventing display quality deterioration of the organic EL device and improving display quality by suppressing variations in the dimensions of the partition walls.
JP 2005-11572 A

By the way, as a partition which divides the pixel area | region which forms a light emitting layer, there exists what forms by laminating | stacking the inorganic partition consisting of an inorganic insulating material, and the organic partition consisting of an organic material. In this case, even if the inorganic partition wall and the organic partition wall are formed in a uniform shape, if there is a shift in the arrangement position of the inorganic partition wall and the organic partition wall, the shape of each pixel region surrounded by the inorganic partition wall and the organic partition wall is biased. Will occur. If the shape of the pixel region is biased (asymmetrical), the functional layer is unevenly distributed and it is difficult to form a substantially uniform film thickness.
For this reason, even if it uses the technique mentioned above, the film thickness of the functional layer containing a light emitting layer becomes non-uniform | heterogenous, and there exists a problem that the deterioration of the light emission characteristic of an organic EL layer and the lifetime fall will be caused.

  The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a method for manufacturing a light-emitting device that can easily and reliably prevent displacement between an inorganic partition wall and an organic partition wall that partitions a pixel region. And

In the method for manufacturing a light emitting device and the electronic apparatus according to the present invention, the following means are employed in order to solve the above problems.
According to a first aspect of the present invention, in the method for manufacturing a light emitting device, a step of forming a first electrode on a substrate, a step of forming an inorganic insulating material layer on the first electrode, and a predetermined position on the inorganic insulating material layer Forming a first partition made of an organic material, etching the inorganic insulating material layer using the first partition as a mask to form a second partition and exposing the first electrode, and the first A step of forming an organic functional layer on the first electrode by disposing an organic functional material in a region surrounded by the partition and the second partition by a droplet discharge method; and forming a second electrode on the organic functional layer And a step of performing.
According to the present invention, since the first partition and the second partition are formed by self-alignment, the shape of the region surrounded by the first partition and the second partition is formed in a substantially target shape with no bias. Is done. As a result, the organic functional layer disposed in this region is formed with a substantially uniform film thickness without bias. Therefore, a light-emitting device having excellent light emission characteristics and a long lifetime can be obtained.

In addition, after forming the second barrier rib, the first barrier rib is etched to expose a part of the second barrier rib on the first electrode side. Since it is avoided to be formed in a covered state (overhang), it is possible to suppress the inconvenience that bubbles or the like are mixed in the organic functional layer.
In addition, in the case where the etching barrier layer is disposed on the first barrier rib before the first barrier rib is etched, the etching barrier layer prevents the upper surface of the first barrier rib from being etched. The thickness of one partition can be maintained substantially uniform. Thereby, the organic functional layer can be formed uniformly.

In the second invention, the electronic apparatus includes the light emitting device manufactured by the manufacturing method of the first invention.
According to the present invention, it is possible to obtain a high-quality electronic device including a display unit having excellent light emission characteristics and the like.

Embodiments of a method for manufacturing a light emitting device and an electronic apparatus according to the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic diagram showing a wiring structure of an organic EL device according to this embodiment.
An organic EL device (light emitting device) 1 is an active matrix organic EL device using a thin film transistor (hereinafter abbreviated as TFT) as a switching element. In each of the drawings shown below, the scale of each layer and each member is different in order to make each layer and each member recognizable on the drawing.

  The organic EL device 1 includes a plurality of scanning lines 101, a plurality of signal lines 102 extending in a direction perpendicular to each scanning line 101, and a plurality of power supply lines 103 extending in parallel to each signal line 102. In addition to having a wired configuration, a pixel region X is provided near each intersection of the scanning line 101 and the signal line 102.

A data line driving circuit 100 including a shift register, a level shifter, a video line, and an analog switch is connected to the signal line 102. Further, a scanning line driving circuit 80 including a shift register and a level shifter is connected to the scanning line 101.
Further, in each pixel region X, a switching TFT 112 to which a scanning signal is supplied to the gate electrode via the scanning line 101 and a pixel signal shared from the signal line 102 via the switching TFT 112 are held. A capacitor 113, a driving TFT 123 to which a pixel signal held by the holding capacitor 113 is supplied to the gate electrode, and a driving current from the power source line 103 when electrically connected to the power source line 103 via the driving TFT 123 The anode 23 into which the gas flows and the light emitting functional layer 60 sandwiched between the anode 23 and the cathode 50 are provided.
The light-emitting functional layer (organic functional layer) 110 corresponds to an organic electroluminescence element, and a light-emitting phenomenon occurs when holes and electrons injected from the anode 23 and the cathode 50 are combined. .

  According to the organic EL device 1, when the scanning line 101 is driven and the switching TFT 112 is turned on, the potential of the signal line 102 at that time is held in the holding capacitor 113, and according to the state of the holding capacitor 113. The on / off state of the driving TFT 123 is determined. Then, a current flows from the power supply line 103 to the anode 23 through the channel of the driving TFT 123, and further a current flows to the cathode 50 through the light emitting functional layer 60. The light emitting functional layer 60 emits light according to the amount of current flowing therethrough. Therefore, since light emission is controlled on and off for each anode 23, the anode 23 is a pixel electrode.

Next, specific modes of the organic EL device 1 of the present embodiment will be described with reference to FIGS.
2 is a plan view schematically showing the configuration of the organic EL device 1, FIG. 3 is a diagram corresponding to the cross section taken along line AB in FIG. 2, and FIG. 4 is a plan view showing the planar structure of the pixel X of the organic EL device 1. FIG.

  The organic EL device 1 has a configuration in which a substrate 20 having electrical insulation and a sealing substrate 30 having a size smaller than the substrate 20 are arranged to face each other. A sealing resin layer 40 (see FIG. 3) is disposed between the substrate 20 and the sealing substrate 30, and the substrates 20 and 30 are bonded and bonded together.

On the substrate 20, anodes 23 connected to switching TFTs (not shown) are arranged in a matrix on the substrate 20, and are arranged around the pixel electrode region. A power supply line 103 (see FIG. 1) connected to each anode 23 and a pixel portion 3 (inside the one-dot chain line in FIG. 2) located at least on the pixel electrode region in a plan view are formed.
The pixel unit 3 includes a display area 4 at the center (inside the two-dot chain line in FIG. 2) and a dummy area 5 (area between the one-dot chain line and the two-dot chain line) arranged around the display area 4. It is divided into.

In the display area 4, light emitting layers 64R, 64G, and 64B each having an anode 23 are disposed apart from each other. Further, scanning line driving circuits 80 are arranged on both sides of the display area 4 in the drawing. The scanning line driving circuit 80 is provided below the dummy area 5.
Further, an inspection circuit 90 is arranged on the upper side of the display area 4 in the drawing. The inspection circuit 90 is provided below the dummy area 5. This inspection circuit 90 is a circuit for inspecting the operating state of the organic EL device 1, and includes, for example, inspection information output means (not shown) for outputting the inspection result to the outside, and the quality of the apparatus is improved during manufacture or at the time of shipment. It is configured to be inspected.

As shown in FIG. 3, the organic EL device 1 is configured by bonding a substrate 20 and a sealing substrate 30 with a sealing resin layer 40.
A transparent substrate is employed as the substrate 20, and a metal substrate is employed as the sealing substrate 30. The organic EL device 1 is a so-called bottom emission type organic EL device in which the light emitting functional layer 60 emits light, and the light is transmitted through the substrate 20 and emitted.

  As the substrate 20, a glass substrate made of non-alkali glass is used. A driving TFT 123 is formed on the surface of the substrate 20 via a base insulating film (not shown), and an interlayer insulating layer 21 is formed on the driving TFT 123.

  The driving TFT 123 formed on the substrate 20 functions as a driving switching element for driving the anode 23. The driving TFT 123 is formed by using a known TFT manufacturing technique, and is a member in which a silicon film doped with impurities, a gate electrode, a gate insulating film, and the like are stacked. Further, the driving TFT 123 is provided corresponding to the position of the light emitting layers 64R, 64G, and 64B, and is connected to the anode 23 as described later.

The anode (first electrode) 23 is made of a transparent electrode material, and injects holes toward the hole transport layer 62 by an applied voltage, and has a high work function and conductivity. .
Examples of the material for forming the anode 23 include metal oxide. Indium tin oxide (ITO) or a material containing zinc (Zn) in the metal oxide, for example, indium oxide / oxide. A zinc-based amorphous transparent conductive film (Indium Zinc Oxide, IZO / IZET O: registered trademark) can be used.
In the case of the top emission type organic EL device, the material is not limited to the transparent electrode material, and it is not particularly necessary to adopt a material having optical transparency, and any suitable material may be used.
The anode 23 is connected to the driving TFT 123.

On the surface of the substrate on which the anode 23 is formed, an inorganic bank (second partition) 72 mainly composed of a lyophilic material such as SiO 2 and an organic bank (first partition) made of acrylic resin, polyimide resin, or the like. 74 is arranged. The inorganic bank 72 and the organic bank 74 are two-dimensionally arranged so as to surround the anode 23.
That is, as shown in FIG. 4, the organic bank 74 and the inorganic bank 72 have an opening 76 having a substantially rectangular shape in plan view corresponding to the formation region of the pixel electrode 23.

A light emitting functional layer 60 is formed on the anode 23. That is, the plurality of light emitting functional layers 60 are configured to be partitioned (partitioned) by the inorganic bank 72 and the organic bank 74.
The light emitting functional layer 60 formed on the upper layer of the anode 23 has a multilayer structure sandwiched between the anode 23 and the cathode 50, and a hole transport layer 62 and a light emitting layer 64 are sequentially formed from the anode 23 side. .

  The hole transport layer 62 is one of conductive polymer materials, and is for injecting holes from the anode 23 into the light emitting layer 64, and has a film thickness of 30 nm. As a material for forming such a hole transport layer 62, in particular, a 3,4-polyethylenedioxythiophene / polystyrene sulfonic acid (PEDOT / PSS) dispersion, that is, 3,4 in polystyrene sulfonic acid as a dispersion medium. -A dispersion in which polyethylenedioxythiophene is dispersed and further dispersed in water is preferably used. In addition, as a forming material of the positive hole transport layer 62, various things can be used, without being limited to the said thing. For example, those obtained by dispersing polystyrene, polypyrrole, polyaniline, polyacetylene or a derivative thereof in an appropriate dispersion medium such as the above-described polystyrene sulfonic acid can be used.

The light emitting layer 64 is configured such that holes injected from the anode 23 through the hole transport layer 62 and electrons injected from the cathode 50 are combined to generate fluorescence.
As a material for forming such a light emitting layer 64, a known light emitting material capable of emitting fluorescence or phosphorescence can be used. Specifically, polyfluorene derivative (PF), (poly) paraphenylene vinylene derivative (PPV), polyphenylene derivative (PP), polyparaphenylene derivative (PPP), polyvinyl carbazole (PVK), polythiophene derivative, polymethylphenylsilane A polysilane such as (PMPS) is preferably used. In addition, these polymer materials include polymer materials such as perylene dyes, coumarin dyes, rhodamine dyes, such as rubrene, perylene, 9,10-diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, A material such as quinacridone can be doped.
In addition, the organic EL device 1 of the present embodiment is configured to perform color display. That is, the light emitting layers 64R, 64G, and 64B are formed corresponding to the three primary colors R, G, and B of light.

A configuration in which an electron injection / transport layer is provided between the light emitting layer 64 and the cathode 50 may be employed. The electron injecting / transporting layer plays a role of injecting electrons into the light emitting layer 64, and the forming material is not particularly limited, and includes oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and Examples thereof include naphthoquinone and derivatives thereof, anthraquinone and derivatives thereof, tetracyanoanthraquinodimethane and derivatives thereof, fluorenone derivatives, diphenyldicyanoethylene and derivatives thereof, diphenoquinone derivatives, metal complexes of 8-hydroxyquinoline and derivatives thereof, and the like. The
In addition, it is preferable that the electron injection / transport layer has a film thickness that allows light transmission. In this way, the emitted light reflected by the cathode 50 is not shielded, and a decrease in emission intensity can be prevented.

The cathode (second electrode) 50 has an area larger than the total area of the display region 4 and the dummy region 5 and is formed so as to cover each of them. The cathode 50 has a function of injecting electrons into the light emitting layer 64 as a counter electrode of the anode 23.
As a material for forming the cathode 50, for example, calcium metal or an alloy containing calcium as a main component is laminated on the light emitting layer 64 side to form the first cathode layer, and aluminum or an alloy containing aluminum as a main component is formed on the upper layer, or A laminate in which silver or a silver-magnesium alloy or the like is laminated to form the second cathode layer can be employed. The second cathode layer covers the first cathode layer and is provided to protect from a chemical reaction with oxygen, moisture, etc., and to increase the conductivity of the cathode 50. Therefore, the cathode 50 may have a single layer structure when the material is chemically stable, has a low work function, and has a low electric resistance, and is not limited to a metal material.

The sealing resin layer 40 and the sealing substrate 30 are disposed on the surface of the cathode 50.
The sealing resin layer 40 adheres and bonds the substrate 20 and the sealing substrate 30 together. In addition, the sealing resin layer 40 improves the function of preventing the entry of oxygen and moisture into the light emitting layer 64 and the like, and the adhesion at the interface between the inorganic material constituting the cathode 50 and the unstable organic bank 74. It also has a function of preventing the cathode 50 from peeling off.
As a specific material of the sealing resin layer 40, a polymer material having lipophilicity and low water absorption is suitably employed. For example, resin materials such as acrylic, epoxy, urethane, and polyolefin resins having thermosetting properties are employed. Moreover, you may employ | adopt the 2 component curable resin material which mixes and hardens | cures a hardening | curing agent and monomer / oligomer resin material.

  A metal substrate is used as the sealing substrate 30. Specifically, the sealing substrate 30 is made of an iron-nickel alloy or an iron-nickel-cobalt alloy, and preferably employs any one of Kovar, 42 nickel alloy, and 36 nickel alloy.

  In the organic EL device 1 having such a configuration, when a driving current flows from the power supply line 103 (see FIG. 1) into the anode 23 of the light emitting functional layer 60, a potential difference is generated between the anode 23 and the cathode 50, and the anode 23 Then, holes are injected into the light emitting layer 64 from the cathode 50 through the hole transport layer 62. As a result, the injected holes and electrons combine to emit light. The emitted light from the light emitting layer 64 passes through the substrate 20 and is emitted to the display region 4.

Next, an example of a method for manufacturing the organic EL device 1 according to this embodiment will be described with reference to FIGS.
Each of the cross-sectional views shown in FIGS. 5 and 6 corresponds to a cross section taken along line AB in FIG.

  First, as shown in FIG. 5A, the driving TFT 123 is formed on the substrate 20, and a transparent conductive film to be the anode 23 is formed so as to cover the entire surface of the substrate 20. Then, by patterning this transparent conductive film, the anode 23 and the driving TFT 123 are made conductive.

Next, as shown in FIG. 5B, an inorganic insulating material layer 71 to be the inorganic bank 62 is formed so as to cover the entire surface of the substrate 20. The inorganic insulating material layer 71 functions as a hole movement shielding layer that prevents hole movement from the anode 23.
Further, as shown in FIG. 5C, an organic bank 74 made of an organic material is formed so as to cover the inorganic insulating material layer 71. As a specific method for forming the organic bank 74, for example, an organic material layer formed by applying a photosensitive acrylic resin or polyimide resin dissolved in a solvent by various coating methods such as a spin coating method or a dip coating method. Form. Further, the organic bank 74 is formed by patterning the organic material layer by a photolithography technique to form an opening 74a in the organic material layer.

Next, as shown in FIG. 5D, the inorganic insulating material layer 71 is etched using the organic bank 74 as a mask. That is, the inorganic insulating material layer 71 exposed in the opening 74a of the organic bank 74 is removed by etching.
The method of etching the inorganic insulating material layer 71 may be either wet etching using a hydrofluoric acid aqueous solution or dry etching using a fluorine gas.
Thus, an opening 72a corresponding to the opening 74a surrounded by the organic bank 74 is formed in the inorganic insulating material layer 71, and the anode 23 is exposed on the bottom surface of the opening 72a. The inorganic bank 72 is formed below the organic bank 74 by removing a part of the inorganic insulating material layer 71 (opening 72a is formed).
As described above, the inorganic bank 72 is formed by etching the inorganic insulating material layer 71 using the organic bank 74 as a mask. Therefore, the positions and shapes of the organic bank 74 and the inorganic bank 72 in the plane direction inevitably coincide with each other. . That is, the organic bank 74 and the inorganic bank 72 are formed by self-alignment, so that the shape of the opening 76 including the opening 72a of the inorganic bank 72 and the opening 74a of the organic bank 74 is formed without deviation (positional deviation). The

Next, as shown in FIG. 6A, the organic bank 74 is etched.
As described above, when the inorganic insulating material layer 71 is etched using the organic bank 74 as a mask, the inorganic insulating material layer 71 may be removed (overhang) to the inside of the organic bank 74. When the organic bank 74 is in an overhang state, it is difficult to form a hole transport layer with a uniform film thickness when bubbles are mixed in this space when a hole transport layer forming material is disposed in a later step. turn into.
Therefore, by etching a part of the organic bank 74, the inorganic bank 72 is exposed and the overhang state of the organic bank 74 is eliminated.

As a method of etching the organic bank 74, either a wet etching method or a dry etching method may be used, but a dry etching method is preferable in order to avoid adverse effects such as contamination on the anode 23. As a dry etching method, there are a method performed under reduced pressure and a method performed under atmospheric pressure, but it can be selected in consideration of throughput, running cost, apparatus cost, and the like.
In the case of dry etching the organic bank 74 made of acrylic or polyimide, oxygen gas is used, but it is preferable to add 5 to 10% CF4 or the like in order to prevent surface roughness and a decrease in etching rate.
In order to efficiently expose the inorganic bank 72, it is desirable to perform etching with plasma having low anisotropy (small difference between the etching rate in the vertical direction and the etching rate in the horizontal direction). In order to perform etching with low anisotropy, for example, when using plasma under reduced pressure, it is preferable to perform the etching at a relatively high pressure of about 5 to 20 Pa. The plasma is preferably excited by ICP (inductively coupled plasma) or microwave that can individually control the bias to the substrate and the excitation energy of the plasma. By using these plasmas and setting the substrate bias to 0 or to a low value, the organic bank 74 can be easily etched in the lateral direction, and the inorganic bank 72 can be efficiently exposed. In addition, since the etching is mainly performed by a chemical reaction, the etching can be performed with the surface of the organic bank 74 being smooth.

When the organic bank 74 is etched, as shown in FIG. 6A, the opening 74a surrounding the anode 23 is enlarged, and a part of the inorganic bank 72 disposed below the organic bank 74 is exposed. That is, as shown in FIG. 4, the opening 76 is formed so that the anode 23 is surrounded by the opening 72 a of the inorganic bank 72 and the inorganic bank 72 is surrounded by the opening 74 a of the organic bank 74. Specifically, the inorganic bank 72 is exposed so as to protrude from the organic bank 74 by 0.5 μm or more.
Furthermore, when the organic bank is etched by the method as described above, it is desirable that the thickness of the organic bank is previously increased. For example, when the final film thickness of the organic bank is 2 μm, the film thickness is initially set to 5 μm. By etching the organic bank by 3 μm by the above method, an inorganic bank having a width of about 3 μm, which is almost the same as the etching amount, can be exposed.

Next, the organic bank 74 is stabilized by performing heat treatment. By controlling the conditions of this heat treatment, the organic bank 74 may be partially softened, and the cross-sectional shape may be controlled so that the side surface is inclined.
Furthermore, the surface of the organic bank 74 is rendered liquid repellent by performing plasma treatment in an atmosphere containing a fluorocarbon gas such as CF 4. Since the surface of the anode 23 is made lyophilic by oxygen plasma when the organic bank 72 is etched, the lyophilicity on the organic bank 74 and the anode 23 can be controlled.

Next, as shown in FIG. 6B, the hole transport layer 62 and the light emitting layer 64 are formed on the openings 76 of the inorganic bank 72 and the organic bank 74, that is, on the anode 23.
In the hole transport layer forming step, the hole transport layer material is applied onto the anode 23 by a droplet discharge method such as an ink jet method, and then a drying process and a heat treatment are performed to form the hole transport layer 62.
Similarly, in the light emitting layer forming step, the light emitting layer forming material is discharged onto the hole transport layer 62 by a droplet discharge method such as an ink jet method, and then the light emitting layer 64 is formed by performing a drying process and a heat treatment. .

As described above, the organic bank 74 and the inorganic bank 72 are self-aligned, so that the opening 74a of the organic bank 74 and the opening 72a of the inorganic bank 72 are formed without misalignment. Thereby, in the opening 76 (openings 72a and 74a) surrounded by the inorganic bank 72 and the organic bank 74, the width of the inorganic bank 72 protruding (exposed) from the lower layer of the organic bank 74 is substantially constant in any direction. The width of the exposed inorganic bank 72 greatly affects the wettability of the surface when a liquid material is disposed in the opening of the organic bank 74. For this reason, the liquid material arranged in the opening of the organic bank 74 can obtain wettability over the entire circumference of the organic bank, and can be arranged without any bias. Therefore, the hole transport layer 62 and the light emitting layer 64 obtained by drying the liquid material are formed in a substantially symmetric shape with a substantially uniform film thickness and no bias.
Further, as compared with the case where each of the organic bank 74 and the inorganic bank 72 is formed by photolithography, it is not necessary to provide a margin for absorbing the alignment variation in the exposure process, and the ratio of the region where the light emitting layer 64 is formed (Aperture ratio) can be improved.

  Next, as shown in FIG. 6C, the cathode 50 is formed. For example, a cathode forming material is formed by physical vapor deposition such as ion plating to form the cathode 50. At this time, the cathode 50 is formed so as to cover not only the upper surface of the light emitting layer 64 and the organic bank 74 but also the wall surface forming the outer portion of the organic bank 74.

Finally, the substrate 20 and the sealing substrate 30 are bonded together. Here, first, the sealing resin layer 40 is disposed on the surface of the cathode 50 formed on the substrate 20 so as to cover the cathode 50, and then the sealing substrate 30 is placed on the sealing resin layer 40 in a reduced pressure atmosphere. By placing and gluing.
By bonding in such a reduced pressure atmosphere, bubbles can be prevented from entering between the sealing resin layer 40 and the substrate 20 or between the sealing resin layer 40 and the sealing substrate 30. For this reason, it is prevented that oxygen and moisture enter the light emitting layer 64 through the bubbles, and the light emission characteristics and lifetime of the light emitting layer 64 can be suppressed from decreasing.
The sealing resin layer 40 is cured (adhered) by heating the substrate 20 to 60 ° C. with a hot plate.

Next, a method for manufacturing the organic EL device 1 according to the second embodiment of the present invention will be described with reference to FIGS.
This embodiment is different from the first embodiment in the formation method of the inorganic bank 72 and the organic bank 74, and the other steps are the same as the above embodiment. For this reason, only the formation method of the inorganic bank 72 and the organic bank 74 is demonstrated.

First, as shown in FIG. 7A, after forming the anode 23, an inorganic insulating material layer 71 to be the inorganic bank 72 is formed. Further, a photosensitive organic material layer 73 a and an organic material layer 73 b are formed so as to cover the insulating material layer 71.
The organic material layer 73a becomes the organic bank 74, and is applied by dissolving a photosensitive acrylic resin or polyimide resin in a solvent using a spin coat method, a slit coat method, or the like. The applied material is heat-treated (pre-baked) to form a film.
Further, a material to be the organic material layer 73b is applied on the organic material layer 73a. The organic material layer 73b serves as an etching mask in an etching process that exposes the inorganic bank 72. The organic material layer 73b is formed by coating a resin different from the photosensitive organic material layer 73a in a solvent by using a spin coating method or a slit coating method. As the organic material layer 73b, a novolac resin or the like often used as a normal etching mask can be used, and the organic material layer 73a contains fluorine or has a lower temperature at which the film is stabilized than the organic material layer 73a. The one having a slower etching rate with oxygen plasma is used. A film is formed by pre-baking the applied material.

Next, as shown in FIG. 7B, the organic material layer 73a and the organic material layer 73b are exposed in a predetermined pattern and developed with an organic alkaline solution to form a pattern having an opening on the anode 23. .
Then, as shown in FIG. 7C, the inorganic insulating material layer 71 is etched using the organic material layer 73a and the organic material layer 73b as a mask to form an inorganic bank 72. This etching can be performed by wet etching or dry etching similar to the first embodiment.

Further, as shown in FIG. 7D, the organic material layer 73a and the organic material layer 73b are etched in order to expose a part of the inorganic bank 72. Etching under conditions with low anisotropy is performed using the same oxygen plasma as in the first embodiment. At this time, since the organic material layer 73a has a higher etching rate by oxygen plasma than the organic material layer 73b, the organic material layer 73a is largely etched in the lateral direction. For this reason, the opening of the organic material layer 73a can be widened compared to the thickness of etching the organic material layer 73b.
Then, as shown in FIG. 8, all the organic material layer 73 b is removed by etching, so that the pattern of the remaining organic material layer 73 a becomes the organic bank 74.

Since different materials are used for the organic material layer 73a and the organic material layer 73b, when the light emission of the plasma is observed during the etching, the light emission changes when the organic material layer 73b is completely etched. Therefore, the end point of etching of the organic material layer 73b can be detected, and etching with high reproducibility can be performed by controlling the etching based on the end point of the organic material layer 73b. Therefore, the organic bank 74 having a constant thickness can be formed even when the etching rate varies.
In addition, the width of the exposed portion of the inorganic bank 72 can be increased without extremely increasing the thickness of the organic material layer 73a and the organic material layer 73b. For example, if the organic material layer 73a is 2 μm, the film thickness of the organic material layer 73b is 2 μm, and the etching rate of the organic material layer 73b with respect to oxygen plasma is 1/3 of the organic material layer 73a, the inorganic bank 72 having a width of about 6 μm. Can be exposed. For this reason, it becomes possible to improve the dimensional accuracy of the patterns of the inorganic bank 72 and the organic bank 74.
Thereafter, the organic EL device 1 is formed using the same process as in the first embodiment.

In the above-described embodiment of the organic EL device 1, the bottom emission type has been described as an example. However, the present invention is not limited to this, and the top emission type is also a type of emitting emitted light on both sides. It can also be applied to things.
Further, although the active matrix type has been described as an example, the present invention is not limited to this and can also be applied to a passive matrix type.

As described above, according to the present invention, the inorganic bank 72 and the organic bank 74 can be formed without misalignment. Specifically, the opening 76 formed of the opening 72a of the inorganic bank 72 and the opening 74a of the organic bank 74 is formed in a target shape that is not biased.
That is, when the organic bank 74 having the opening is formed after the inorganic bank 72 having the opening is formed as in the prior art, it is difficult to eliminate the positional deviation between the inorganic bank 72 and the organic bank 74. Met. Since the inorganic bank 72 has a film thickness of about 20 to 200 nm, the organic bank 74 cannot be arranged with reference to the inorganic bank 72 (visually). For example, the metal pattern of the same layer as the signal line 101 is used as a reference. Indirect alignment was performed. For this reason, a positional shift occurs between the opening of the inorganic bank 72 and the opening of the organic bank 74, and a biased opening is formed. Therefore, the light emitting layer 64 and the like formed in the opening are formed with a nonuniform thickness.
However, according to the present invention, since the light emitting layer 64 and the like are formed with a substantially uniform film thickness, the organic EL device 1 with good light emission characteristics and long life can be obtained.

Next, an electronic apparatus having the above-described organic EL device 1 as a display unit will be described with reference to FIG.
FIG. 9A is a perspective view showing an example of a mobile phone. In FIG. 9A, the mobile phone 1000 includes a display unit 1001 using the organic EL device 1 described above.
FIG. 9B is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 9B, a timepiece 1100 includes a display unit 1101 using the organic EL device 1 described above.
FIG. 9C is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 9C, the information processing apparatus 1200 includes an input unit 1202 such as a keyboard, an information processing apparatus main body (housing) 1204, and a display unit 1206 using the organic EL device 1 described above.
FIG. 9D is a perspective view showing an example of a thin large-screen television. In FIG. 9D, the thin large-screen TV 1300 includes a thin large-screen TV main body (housing) 1302, an audio output unit 1304 such as a speaker, and a display unit 1306 including the organic EL device 1.

  As described above, since the electronic devices 1000, 1100, 1200, and 1300 shown in FIG. 9 include the organic EL device (light-emitting device) 1, the display units 1001, 1101, 1206, and 1306 have higher quality and longer life. It will be the one that was made.

  The organic EL device 1 is not limited to being provided as a display unit, and may be an electronic device provided as a light emitting unit. For example, a page printer (image forming apparatus) including the organic EL device 1 as an exposure head (line head) may be used.

It is a schematic diagram which shows the wiring structure of the organic electroluminescent apparatus 1 which concerns on this embodiment. 1 is a schematic diagram showing a configuration of an organic EL device 1. FIG. It is sectional drawing which follows the AB line | wire of FIG. It is a figure which shows the planar shape of a pixel typically. It is a figure which shows the manufacturing method of the organic electroluminescent apparatus 1 in order of a process. FIG. 6 is a diagram showing a step following FIG. 5. It is a figure which shows 2nd Embodiment of the manufacturing method of the organic electroluminescent apparatus 1 in process order. FIG. 8 is a diagram showing a step following FIG. 7. It is a figure which shows the electronic device which concerns on this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Organic EL device (light emitting device), 20 ... Substrate, 23 ... Pixel electrode, anode (first electrode), 50 ... Cathode (second electrode), 60 ... Light emitting functional layer (organic functional layer), 64 ... Light emitting layer 71 ... Inorganic insulating material layer, 72 ... Inorganic bank (second partition), 72a ... Opening, 74 ... Organic bank (first partition), 74a ... Opening, 76 ... Opening, 1000, 1100, 1200, 1300 ... Electronic equipment , 1001, 1101, 1202, 1306... Display unit (light emitting device)

Claims (4)

Forming a first electrode on a substrate;
Forming an inorganic insulating material layer on the first electrode;
Forming a first partition made of an organic material at a predetermined position on the inorganic insulating material layer;
Etching the inorganic insulating material layer using the first partition as a mask to form a second partition and exposing the first electrode;
Forming an organic functional layer on the first electrode by disposing an organic functional material in a region surrounded by the first and second partitions by a droplet discharge method;
Forming a second electrode on the organic functional layer;
A method for manufacturing a light-emitting device, comprising:   2. The light emitting device according to claim 1, further comprising: a step of etching the first partition after forming the second partition to expose a part of the second partition on the first electrode side. Manufacturing method.   3. The method of manufacturing a light emitting device according to claim 2, further comprising a step of disposing an etching resistant layer on a part of the first partition prior to etching the first partition. An electronic apparatus comprising the light emitting device manufactured by the manufacturing method according to any one of claims 1 to 3.

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