JP2007070554A - Epoxy resin composition for encapsulation of optical semiconductor - Google Patents
Epoxy resin composition for encapsulation of optical semiconductor Download PDFInfo
- Publication number
- JP2007070554A JP2007070554A JP2005261576A JP2005261576A JP2007070554A JP 2007070554 A JP2007070554 A JP 2007070554A JP 2005261576 A JP2005261576 A JP 2005261576A JP 2005261576 A JP2005261576 A JP 2005261576A JP 2007070554 A JP2007070554 A JP 2007070554A
- Authority
- JP
- Japan
- Prior art keywords
- group
- epoxy resin
- carbon atoms
- epoxy
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 121
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 121
- 239000000203 mixture Substances 0.000 title claims abstract description 47
- 230000003287 optical effect Effects 0.000 title claims abstract description 45
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000005538 encapsulation Methods 0.000 title claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 32
- 125000003118 aryl group Chemical group 0.000 claims abstract description 19
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 17
- -1 glycidoxy group Chemical group 0.000 claims description 63
- 125000004432 carbon atom Chemical group C* 0.000 claims description 40
- 125000000217 alkyl group Chemical group 0.000 claims description 24
- 238000005984 hydrogenation reaction Methods 0.000 claims description 17
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 125000001424 substituent group Chemical group 0.000 claims description 10
- 239000004593 Epoxy Substances 0.000 claims description 7
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 4
- 125000005843 halogen group Chemical group 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 239000011342 resin composition Substances 0.000 claims description 3
- 125000000547 substituted alkyl group Chemical group 0.000 claims description 2
- 238000009833 condensation Methods 0.000 abstract description 6
- 230000005494 condensation Effects 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 2
- 239000004848 polyfunctional curative Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 26
- 238000006243 chemical reaction Methods 0.000 description 24
- 150000002989 phenols Chemical class 0.000 description 23
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 20
- 239000003054 catalyst Substances 0.000 description 19
- 229920003986 novolac Polymers 0.000 description 18
- 239000000047 product Substances 0.000 description 18
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 17
- 229920005989 resin Polymers 0.000 description 17
- 239000011347 resin Substances 0.000 description 17
- 239000002904 solvent Substances 0.000 description 15
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 13
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 12
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000000314 lubricant Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 239000007822 coupling agent Substances 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 150000004780 naphthols Chemical class 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 150000001896 cresols Chemical class 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical compound C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006482 condensation reaction Methods 0.000 description 4
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 4
- UKMSUNONTOPOIO-UHFFFAOYSA-N docosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCC(O)=O UKMSUNONTOPOIO-UHFFFAOYSA-N 0.000 description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 4
- 125000000623 heterocyclic group Chemical group 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- 150000004678 hydrides Chemical class 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- IXQGCWUGDFDQMF-UHFFFAOYSA-N 2-Ethylphenol Chemical class CCC1=CC=CC=C1O IXQGCWUGDFDQMF-UHFFFAOYSA-N 0.000 description 3
- GJYCVCVHRSWLNY-UHFFFAOYSA-N 2-butylphenol Chemical class CCCCC1=CC=CC=C1O GJYCVCVHRSWLNY-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000002723 alicyclic group Chemical group 0.000 description 3
- 239000004305 biphenyl Substances 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 3
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical class C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 3
- 238000006266 etherification reaction Methods 0.000 description 3
- 150000004665 fatty acids Chemical class 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 239000011256 inorganic filler Substances 0.000 description 3
- 229910003475 inorganic filler Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 235000013824 polyphenols Nutrition 0.000 description 3
- 238000010992 reflux Methods 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical group C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- QCBSYPYHCJMQGB-UHFFFAOYSA-N 2-ethyl-1,3,5-triazine Chemical compound CCC1=NC=NC=N1 QCBSYPYHCJMQGB-UHFFFAOYSA-N 0.000 description 2
- ZFEQSERZJMLTHK-UHFFFAOYSA-N 4-(4-hydroxyphenyl)-2,3,5,6-tetramethylphenol Chemical compound CC1=C(O)C(C)=C(C)C(C=2C=CC(O)=CC=2)=C1C ZFEQSERZJMLTHK-UHFFFAOYSA-N 0.000 description 2
- SOFILIHJTWSLCM-UHFFFAOYSA-N 4-[1-(4-hydroxyphenyl)fluoren-1-yl]phenol Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC3=CC=CC=C3C2=CC=C1 SOFILIHJTWSLCM-UHFFFAOYSA-N 0.000 description 2
- GCKIRZYWQROFEJ-UHFFFAOYSA-N 4-[2-[4-[1,1-bis(4-hydroxyphenyl)ethyl]phenyl]propyl]phenol Chemical compound C=1C=C(C(C)(C=2C=CC(O)=CC=2)C=2C=CC(O)=CC=2)C=CC=1C(C)CC1=CC=C(O)C=C1 GCKIRZYWQROFEJ-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 235000021357 Behenic acid Nutrition 0.000 description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 239000005639 Lauric acid Substances 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000004844 aliphatic epoxy resin Substances 0.000 description 2
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 2
- 150000008041 alkali metal carbonates Chemical class 0.000 description 2
- 125000003342 alkenyl group Chemical group 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229940116226 behenic acid Drugs 0.000 description 2
- XFUOBHWPTSIEOV-UHFFFAOYSA-N bis(oxiran-2-ylmethyl) cyclohexane-1,2-dicarboxylate Chemical compound C1CCCC(C(=O)OCC2OC2)C1C(=O)OCC1CO1 XFUOBHWPTSIEOV-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 150000001735 carboxylic acids Chemical class 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000004359 castor oil Substances 0.000 description 2
- 235000019438 castor oil Nutrition 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 2
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical class C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 2
- 239000003759 ester based solvent Substances 0.000 description 2
- 239000004210 ether based solvent Substances 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 2
- BXWNKGSJHAJOGX-UHFFFAOYSA-N hexadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCO BXWNKGSJHAJOGX-UHFFFAOYSA-N 0.000 description 2
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 2
- VKOBVWXKNCXXDE-UHFFFAOYSA-N icosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCC(O)=O VKOBVWXKNCXXDE-UHFFFAOYSA-N 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 150000007529 inorganic bases Chemical class 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000003094 microcapsule Substances 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- GLDOVTGHNKAZLK-UHFFFAOYSA-N octadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCCCO GLDOVTGHNKAZLK-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002798 polar solvent Substances 0.000 description 2
- 229920001451 polypropylene glycol Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- TUNFSRHWOTWDNC-HKGQFRNVSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCC[14C](O)=O TUNFSRHWOTWDNC-HKGQFRNVSA-N 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- LTVUCOSIZFEASK-MPXCPUAZSA-N (3ar,4s,7r,7as)-3a-methyl-3a,4,7,7a-tetrahydro-4,7-methano-2-benzofuran-1,3-dione Chemical compound C([C@H]1C=C2)[C@H]2[C@H]2[C@]1(C)C(=O)OC2=O LTVUCOSIZFEASK-MPXCPUAZSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- 125000006273 (C1-C3) alkyl group Chemical group 0.000 description 1
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- SSUJUUNLZQVZMO-UHFFFAOYSA-N 1,2,3,4,8,9,10,10a-octahydropyrimido[1,2-a]azepine Chemical compound C1CCC=CN2CCCNC21 SSUJUUNLZQVZMO-UHFFFAOYSA-N 0.000 description 1
- QMMJWQMCMRUYTG-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=C(Cl)C(Cl)=CC(Cl)=C1Cl QMMJWQMCMRUYTG-UHFFFAOYSA-N 0.000 description 1
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 1
- WNXJIVFYUVYPPR-UHFFFAOYSA-N 1,3-dioxolane Chemical compound C1COCO1 WNXJIVFYUVYPPR-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- XZKLXPPYISZJCV-UHFFFAOYSA-N 1-benzyl-2-phenylimidazole Chemical compound C1=CN=C(C=2C=CC=CC=2)N1CC1=CC=CC=C1 XZKLXPPYISZJCV-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical class C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- DPDQQGBQYIBXDX-UHFFFAOYSA-N 2,4,6-tris(aminomethyl)phenol Chemical compound NCC1=CC(CN)=C(O)C(CN)=C1 DPDQQGBQYIBXDX-UHFFFAOYSA-N 0.000 description 1
- JFGVTUJBHHZRAB-UHFFFAOYSA-N 2,6-Di-tert-butyl-1,4-benzenediol Chemical compound CC(C)(C)C1=CC(O)=CC(C(C)(C)C)=C1O JFGVTUJBHHZRAB-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- MFGOFGRYDNHJTA-UHFFFAOYSA-N 2-amino-1-(2-fluorophenyl)ethanol Chemical compound NCC(O)C1=CC=CC=C1F MFGOFGRYDNHJTA-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical compound CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- RFVNOJDQRGSOEL-UHFFFAOYSA-N 2-hydroxyethyl octadecanoate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCO RFVNOJDQRGSOEL-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QXSNXUCNBZLVFM-UHFFFAOYSA-N 2-methyl-1h-imidazole;1,3,5-triazinane-2,4,6-trione Chemical compound CC1=NC=CN1.O=C1NC(=O)NC(=O)N1 QXSNXUCNBZLVFM-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- RJIQELZAIWFNTQ-UHFFFAOYSA-N 2-phenyl-1h-imidazole;1,3,5-triazinane-2,4,6-trione Chemical compound O=C1NC(=O)NC(=O)N1.C1=CNC(C=2C=CC=CC=2)=N1 RJIQELZAIWFNTQ-UHFFFAOYSA-N 0.000 description 1
- PFANXOISJYKQRP-UHFFFAOYSA-N 2-tert-butyl-4-[1-(5-tert-butyl-4-hydroxy-2-methylphenyl)butyl]-5-methylphenol Chemical compound C=1C(C(C)(C)C)=C(O)C=C(C)C=1C(CCC)C1=CC(C(C)(C)C)=C(O)C=C1C PFANXOISJYKQRP-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- SESYNEDUKZDRJL-UHFFFAOYSA-N 3-(2-methylimidazol-1-yl)propanenitrile Chemical compound CC1=NC=CN1CCC#N SESYNEDUKZDRJL-UHFFFAOYSA-N 0.000 description 1
- BVYPJEBKDLFIDL-UHFFFAOYSA-N 3-(2-phenylimidazol-1-yl)propanenitrile Chemical compound N#CCCN1C=CN=C1C1=CC=CC=C1 BVYPJEBKDLFIDL-UHFFFAOYSA-N 0.000 description 1
- SZUPZARBRLCVCB-UHFFFAOYSA-N 3-(2-undecylimidazol-1-yl)propanenitrile Chemical compound CCCCCCCCCCCC1=NC=CN1CCC#N SZUPZARBRLCVCB-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- DOYKFSOCSXVQAN-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C(C)=C DOYKFSOCSXVQAN-UHFFFAOYSA-N 0.000 description 1
- UDWIZRDPCQAYRF-UHFFFAOYSA-N 3-[diethoxy(methyl)silyl]propyl prop-2-enoate Chemical compound CCO[Si](C)(OCC)CCCOC(=O)C=C UDWIZRDPCQAYRF-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- MCDBEBOBROAQSH-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl prop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C=C MCDBEBOBROAQSH-UHFFFAOYSA-N 0.000 description 1
- KNTKCYKJRSMRMZ-UHFFFAOYSA-N 3-chloropropyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCCl KNTKCYKJRSMRMZ-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- VESRBMGDECAMNH-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)propan-2-yl]-2,3,5,6-tetramethylphenol Chemical compound CC1=C(C(=C(C(=C1O)C)C)C(C)(C)C1=CC=C(C=C1)O)C VESRBMGDECAMNH-UHFFFAOYSA-N 0.000 description 1
- RPJFWRZEEKJTGN-UHFFFAOYSA-N 4-[2-(4-hydroxyphenyl)propan-2-yl]-2,6-dimethylphenol Chemical compound CC1=C(O)C(C)=CC(C(C)(C)C=2C=CC(O)=CC=2)=C1 RPJFWRZEEKJTGN-UHFFFAOYSA-N 0.000 description 1
- YKCCXOHQOVXCIG-UHFFFAOYSA-N 5-(1-cyanoethyl)-2-(2-phenylethoxymethyl)imidazole-1,4-dicarbonitrile Chemical compound C(#N)C(C)C=1N(C(=NC=1C#N)COCCC1=CC=CC=C1)C#N YKCCXOHQOVXCIG-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- FKBMTBAXDISZGN-UHFFFAOYSA-N 5-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1C(C)CCC2C(=O)OC(=O)C12 FKBMTBAXDISZGN-UHFFFAOYSA-N 0.000 description 1
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- WRAGBEWQGHCDDU-UHFFFAOYSA-M C([O-])([O-])=O.[NH4+].[Zr+] Chemical compound C([O-])([O-])=O.[NH4+].[Zr+] WRAGBEWQGHCDDU-UHFFFAOYSA-M 0.000 description 1
- QDZXJOMXPRWGFG-UHFFFAOYSA-N CCC1=NC=NC=N1.O=C1NC(=O)NC(=O)N1 Chemical compound CCC1=NC=NC=N1.O=C1NC(=O)NC(=O)N1 QDZXJOMXPRWGFG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 235000010469 Glycine max Nutrition 0.000 description 1
- 244000068988 Glycine max Species 0.000 description 1
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- BGNXCDMCOKJUMV-UHFFFAOYSA-N Tert-Butylhydroquinone Chemical compound CC(C)(C)C1=CC(O)=CC=C1O BGNXCDMCOKJUMV-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- ZFDXZGUFUMAREO-UHFFFAOYSA-N [1-(hydroxymethyl)-2-phenylimidazol-4-yl]methanol Chemical compound OCC1=CN(CO)C(C=2C=CC=CC=2)=N1 ZFDXZGUFUMAREO-UHFFFAOYSA-N 0.000 description 1
- XMUZQOKACOLCSS-UHFFFAOYSA-N [2-(hydroxymethyl)phenyl]methanol Chemical class OCC1=CC=CC=C1CO XMUZQOKACOLCSS-UHFFFAOYSA-N 0.000 description 1
- VYGUBTIWNBFFMQ-UHFFFAOYSA-N [N+](#[C-])N1C(=O)NC=2NC(=O)NC2C1=O Chemical group [N+](#[C-])N1C(=O)NC=2NC(=O)NC2C1=O VYGUBTIWNBFFMQ-UHFFFAOYSA-N 0.000 description 1
- AUNAPVYQLLNFOI-UHFFFAOYSA-L [Pb++].[Pb++].[Pb++].[O-]S([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Mo]([O-])(=O)=O Chemical compound [Pb++].[Pb++].[Pb++].[O-]S([O-])(=O)=O.[O-][Cr]([O-])(=O)=O.[O-][Mo]([O-])(=O)=O AUNAPVYQLLNFOI-UHFFFAOYSA-L 0.000 description 1
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000001299 aldehydes Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 description 1
- 235000020661 alpha-linolenic acid Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- IRERQBUNZFJFGC-UHFFFAOYSA-L azure blue Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Na+].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[Al+3].[S-]S[S-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] IRERQBUNZFJFGC-UHFFFAOYSA-L 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 235000013871 bee wax Nutrition 0.000 description 1
- 239000012166 beeswax Substances 0.000 description 1
- UHVCSNKHFBQKBO-UHFFFAOYSA-N benzyl-ethenyl-[2-(3-trimethoxysilylpropylamino)ethyl]azanium;chloride Chemical compound Cl.CO[Si](OC)(OC)CCCNCCN(C=C)CC1=CC=CC=C1 UHVCSNKHFBQKBO-UHFFFAOYSA-N 0.000 description 1
- KTPIWUHKYIJBCR-UHFFFAOYSA-N bis(oxiran-2-ylmethyl) cyclohex-4-ene-1,2-dicarboxylate Chemical compound C1C=CCC(C(=O)OCC2OC2)C1C(=O)OCC1CO1 KTPIWUHKYIJBCR-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000004204 candelilla wax Substances 0.000 description 1
- 235000013868 candelilla wax Nutrition 0.000 description 1
- 229940073532 candelilla wax Drugs 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 229960000541 cetyl alcohol Drugs 0.000 description 1
- 239000007809 chemical reaction catalyst Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000152 cobalt phosphate Inorganic materials 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- ASGKDLGXPOIMTM-UHFFFAOYSA-N diethoxy-methyl-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](C)(OCC)OCC)CCC2OC21 ASGKDLGXPOIMTM-UHFFFAOYSA-N 0.000 description 1
- FUXUUPOAQMPKOK-UHFFFAOYSA-N diethoxy-methyl-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](C)(OCC)CCOCC1CO1 FUXUUPOAQMPKOK-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- SLQTWNAJXFHMHM-UHFFFAOYSA-N dimethoxy-methyl-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](C)(OC)OC)CCC2OC21 SLQTWNAJXFHMHM-UHFFFAOYSA-N 0.000 description 1
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 150000005125 dioxazines Chemical class 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- JBTWLSYIZRCDFO-UHFFFAOYSA-N ethyl methyl carbonate Chemical compound CCOC(=O)OC JBTWLSYIZRCDFO-UHFFFAOYSA-N 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 235000019197 fats Nutrition 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 1
- 125000005417 glycidoxyalkyl group Chemical group 0.000 description 1
- 239000004845 glycidylamine epoxy resin Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000002357 guanidines Chemical class 0.000 description 1
- 229940083094 guanine derivative acting on arteriolar smooth muscle Drugs 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- IUJAMGNYPWYUPM-UHFFFAOYSA-N hentriacontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC IUJAMGNYPWYUPM-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical group O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- MOUPNEIJQCETIW-UHFFFAOYSA-N lead chromate Chemical compound [Pb+2].[O-][Cr]([O-])(=O)=O MOUPNEIJQCETIW-UHFFFAOYSA-N 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- 229960004488 linolenic acid Drugs 0.000 description 1
- KQQKGWQCNNTQJW-UHFFFAOYSA-N linolenic acid Natural products CC=CCCC=CCC=CCCCCCCCC(O)=O KQQKGWQCNNTQJW-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- OFUAIAKLWWIPTC-UHFFFAOYSA-L magnesium;naphthalene-2-carboxylate Chemical compound [Mg+2].C1=CC=CC2=CC(C(=O)[O-])=CC=C21.C1=CC=CC2=CC(C(=O)[O-])=CC=C21 OFUAIAKLWWIPTC-UHFFFAOYSA-L 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- QLPMKRZYJPNIRP-UHFFFAOYSA-M methyl(trioctyl)azanium;bromide Chemical compound [Br-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC QLPMKRZYJPNIRP-UHFFFAOYSA-M 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000004200 microcrystalline wax Substances 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- MQWFLKHKWJMCEN-UHFFFAOYSA-N n'-[3-[dimethoxy(methyl)silyl]propyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)CCCNCCN MQWFLKHKWJMCEN-UHFFFAOYSA-N 0.000 description 1
- IFZUFHWISBKFJP-UHFFFAOYSA-N n'-[4-[dimethoxy(methyl)silyl]oxybutyl]ethane-1,2-diamine Chemical compound CO[Si](C)(OC)OCCCCNCCN IFZUFHWISBKFJP-UHFFFAOYSA-N 0.000 description 1
- FTQWRYSLUYAIRQ-UHFFFAOYSA-N n-[(octadecanoylamino)methyl]octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)NCNC(=O)CCCCCCCCCCCCCCCCC FTQWRYSLUYAIRQ-UHFFFAOYSA-N 0.000 description 1
- RKISUIUJZGSLEV-UHFFFAOYSA-N n-[2-(octadecanoylamino)ethyl]octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)NCCNC(=O)CCCCCCCCCCCCCCCCC RKISUIUJZGSLEV-UHFFFAOYSA-N 0.000 description 1
- GOQYKNQRPGWPLP-UHFFFAOYSA-N n-heptadecyl alcohol Natural products CCCCCCCCCCCCCCCCCO GOQYKNQRPGWPLP-UHFFFAOYSA-N 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- NXPPAOGUKPJVDI-UHFFFAOYSA-N naphthalene-1,2-diol Chemical compound C1=CC=CC2=C(O)C(O)=CC=C21 NXPPAOGUKPJVDI-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- LYRFLYHAGKPMFH-UHFFFAOYSA-N octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(N)=O LYRFLYHAGKPMFH-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- FATBGEAMYMYZAF-KTKRTIGZSA-N oleamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(N)=O FATBGEAMYMYZAF-KTKRTIGZSA-N 0.000 description 1
- 229940113162 oleylamide Drugs 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- DYFXGORUJGZJCA-UHFFFAOYSA-N phenylmethanediamine Chemical class NC(N)C1=CC=CC=C1 DYFXGORUJGZJCA-UHFFFAOYSA-N 0.000 description 1
- PMOIAJVKYNVHQE-UHFFFAOYSA-N phosphanium;bromide Chemical group [PH4+].[Br-] PMOIAJVKYNVHQE-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000223 polyglycerol Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 229940086066 potassium hydrogencarbonate Drugs 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- WBHHMMIMDMUBKC-XLNAKTSKSA-N ricinelaidic acid Chemical compound CCCCCC[C@@H](O)C\C=C\CCCCCCCC(O)=O WBHHMMIMDMUBKC-XLNAKTSKSA-N 0.000 description 1
- 229960003656 ricinoleic acid Drugs 0.000 description 1
- FEUQNCSVHBHROZ-UHFFFAOYSA-N ricinoleic acid Natural products CCCCCCC(O[Si](C)(C)C)CC=CCCCCCCCC(=O)OC FEUQNCSVHBHROZ-UHFFFAOYSA-N 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- BRKFQVAOMSWFDU-UHFFFAOYSA-M tetraphenylphosphanium;bromide Chemical compound [Br-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 BRKFQVAOMSWFDU-UHFFFAOYSA-M 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- RWJUTPORTOUFDY-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)CCOCC1CO1 RWJUTPORTOUFDY-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 1
- ZNXDCSVNCSSUNB-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)CCOCC1CO1 ZNXDCSVNCSSUNB-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- NDKWCCLKSWNDBG-UHFFFAOYSA-N zinc;dioxido(dioxo)chromium Chemical compound [Zn+2].[O-][Cr]([O-])(=O)=O NDKWCCLKSWNDBG-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Silicon Polymers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
本発明は、透明性に優れた光半導体封止用エポキシ樹脂組成物及びその硬化物で封止された光半導体装置に関する。 The present invention relates to an epoxy resin composition for optical semiconductor sealing excellent in transparency and an optical semiconductor device sealed with a cured product thereof.
従来から、LED、CCD、フォトカプラ等の光半導体素子の封止材料として、エポキシ樹脂系の封止材料が性能と経済性のバランスの点で好ましいため広く用いられている。特に、従来の光半導体の封止材料には、ビスフェノールA型に代表される芳香族エポキシ樹脂が一般的に使用されてきた。
近年、LEDの分野においては白色LEDを実現するために紫外光を発するLED(紫外LED)の開発が進んでいるが、前記の芳香族エポキシ樹脂は、400nm付近の紫外光で劣化するという課題があった。この問題を解決するために、特許文献1には芳香族エポキシ樹脂の核水素化物を用いる方法が提案されているが、未だ十分とは言えない。
特許文献2にはエポキシ基を有するアルコキシケイ素化合物の縮合物が記載されているが、水素化エポキシ樹脂を含み光半導体封止材料に使用する組成物については記載されていない。
Conventionally, epoxy resin-based sealing materials have been widely used as sealing materials for optical semiconductor elements such as LEDs, CCDs, and photocouplers because they are preferable in terms of balance between performance and economy. In particular, aromatic epoxy resins typified by bisphenol A type have been generally used for conventional optical semiconductor sealing materials.
In recent years, in the field of LEDs, LEDs that emit ultraviolet light (ultraviolet LEDs) have been developed in order to realize white LEDs. However, the aromatic epoxy resin has a problem of being deteriorated by ultraviolet light near 400 nm. there were. In order to solve this problem, Patent Document 1 proposes a method using a nuclear hydride of an aromatic epoxy resin, but it is still not sufficient.
Patent Document 2 describes a condensate of an alkoxysilicon compound having an epoxy group, but does not describe a composition containing a hydrogenated epoxy resin and used for an optical semiconductor sealing material.
本発明は、紫外光においても劣化が少なく、光半導体を実装する際の耐ハンダリフロー性や光半導体装置の信頼性という観点から求められている耐湿性にも優れた光半導体封止用エポキシ樹脂組成物を提供することを目的とする。 The present invention is an epoxy resin for encapsulating an optical semiconductor that is less deteriorated even in ultraviolet light and has excellent moisture resistance required from the viewpoint of solder reflow resistance when mounting an optical semiconductor and the reliability of an optical semiconductor device. An object is to provide a composition.
本発明者らは前記課題を解決すべく鋭意研究を行った結果、本発明に至った。
すなわち本発明は以下の1)〜3)に関する。
1)一般式(1)で表されるアルコキシケイ素化合物同士を、又は一般式(1)で表されるアルコキシケイ素化合物と一般式(2)で表されるアルコキシケイ素化合物とを、共加水分解縮合させることにより得られるエポキシ樹脂(A)、
As a result of intensive studies to solve the above problems, the present inventors have reached the present invention.
That is, the present invention relates to the following 1) to 3).
1) Cohydrolytic condensation of alkoxysilicon compounds represented by general formula (1), or an alkoxysilicon compound represented by general formula (1) and an alkoxysilicon compound represented by general formula (2) Epoxy resin (A) obtained by
[化1]
XSi(R1)a(OR2)3−a (1)
(式中、Xはエポキシ基を含む置換基、R1は炭素数1〜14の置換若しくは非置換のアルキル基、炭素数6〜14のアリール基又は炭素数2〜5のアルケニルカルボキシ基を示し、R2は炭素数1〜4のアルキル基を示し、aは0〜2の整数を示し、R1が複数ある場合、複数のR1は互いに同一であっても異なっていてもよい。)
[Chemical 1]
XSi (R 1 ) a (OR 2 ) 3-a (1)
(In the formula, X represents a substituent containing an epoxy group, R 1 represents a substituted or unsubstituted alkyl group having 1 to 14 carbon atoms, an aryl group having 6 to 14 carbon atoms, or an alkenylcarboxy group having 2 to 5 carbon atoms. , R 2 represents an alkyl group having 1 to 4 carbon atoms, a is an integer of 0 to 2, when R 1 is a plurality, the plurality of R 1 may be the being the same or different.)
[化2]
Xk(R3)bSi(OR4)4−(k+b) (2)
(式中、Xはエポキシ基を含む置換基、R3は炭素数1〜14の置換若しくは非置換のアルキル基又は炭素数6〜14のアリール基を示し、R4は炭素数1〜4のアルキル基を示し、k及びbは0〜3の整数であり、k+bは0〜3であり、R3が複数ある場合、複数のR3は互いに同一であっても異なっていてもよい。);
[Chemical 2]
X k (R 3) b Si (OR 4) 4- (k + b) (2)
(In the formula, X represents a substituent containing an epoxy group, R 3 represents a substituted or unsubstituted alkyl group having 1 to 14 carbon atoms or an aryl group having 6 to 14 carbon atoms, and R 4 represents a group having 1 to 4 carbon atoms. an alkyl group, k and b are integer from 0 to 3, k + b is 0 to 3, when there are a plurality of R 3, a plurality of R 3 may be be the same or different from each other.) ;
一般式(3)で表されるエポキシ樹脂の芳香環を核水素化して得られる水素化エポキシ樹脂(B)、
(式中、R5は同一であっても異なっていてもよく水素原子、ハロゲン原子又は炭素数1〜4のアルキル基を示し、mは1〜4の整数、nは平均値で1〜6の正数を示す。);
硬化剤(C)及び硬化促進剤(D)を含有する光半導体封止用エポキシ樹脂組成物。
Wherein R 5 may be the same or different and each represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms, m is an integer of 1 to 4, and n is an average value of 1 to 6 Indicates a positive number.);
An epoxy resin composition for optical semiconductor encapsulation containing a curing agent (C) and a curing accelerator (D).
2)式(1)のXがグリシドキシ基で置換された炭素数1〜3のアルキル基又はエポキシ基を有する炭素数5〜8のシクロアルキル基で置換された炭素数1〜5のアルキル基であり、式(2)のR3が非置換若しくは(メタ)アクリロキシ基で置換された炭素数1〜6のアルキル基又は炭素数6〜14のアリール基である上記1)記載の光半導体封止用エポキシ樹脂組成物。 2) X in formula (1) is an alkyl group having 1 to 5 carbon atoms substituted with a cycloalkyl group having 5 to 8 carbon atoms or an alkyl group having 1 to 3 carbon atoms substituted with a glycidoxy group or an epoxy group. The optical semiconductor encapsulation according to 1), wherein R 3 in the formula (2) is an unsubstituted or substituted alkyl group having 1 to 6 carbon atoms or an aryl group having 6 to 14 carbon atoms substituted with a (meth) acryloxy group Epoxy resin composition.
3)上記1)又は2)に記載のエポキシ樹脂組成物の硬化物で封止された光半導体装置。 3) An optical semiconductor device sealed with a cured product of the epoxy resin composition described in 1) or 2) above.
本発明の光半導体封止材用樹脂組成物を硬化した硬化物は、紫外光による劣化が少ないため、例えば、LEDの明るさを低減させる透明性の経時的低下が小さく、又、耐湿性にも優れているため、光半導体装置に高い信頼性を与える。よって、本発明の光半導体封止用樹脂組成物は光半導体の封止材料として極めて有用である。 The cured product obtained by curing the resin composition for an optical semiconductor encapsulating material of the present invention is less deteriorated by ultraviolet light, so that, for example, the decrease in transparency over time that reduces the brightness of the LED is small, and the moisture resistance is improved. Therefore, high reliability is given to the optical semiconductor device. Therefore, the resin composition for sealing an optical semiconductor of the present invention is extremely useful as a sealing material for an optical semiconductor.
本発明の光半導体封止用エポキシ樹脂組成物は、上記一般式(1)(式中、Xはエポキシ基を含む置換基、R1は炭素数1〜14の置換若しくは非置換のアルキル基、炭素数6〜14のアリール基又は炭素数3〜5のアルケニルカルボキシ基を示し、R2は炭素数1〜4のアルキル基を示し、aは0〜2の整数を示し、R1が複数ある場合、複数のR1は互いに同一であっても異なっていてもよい。)で表されるアルコキシケイ素化合物同士を、又は一般式(1)で表されるアルコキシケイ素化合物と上記一般式(2)(式中、Xはエポキシ基を含む置換基、R3は炭素数1〜14の置換若しくは非置換のアルキル基又は炭素数6〜14のアリール基を示し、R4は炭素数1〜4のアルキル基を示し、k及びbは0〜3の整数であり、k+bは0〜3であり、R3が複数ある場合、複数のR3は互いに同一であっても異なっていてもよい。)で表されるアルコキシケイ素化合物とを、共加水分解縮合させることにより得られるエポキシ樹脂(A);上記一般式(3)(式中、R5は同一であっても異なっていてもよく水素原子、ハロゲン原子又は炭素数1〜4のアルキル基を示し、mは1〜4の整数、nは平均値で1〜6の正数を示す。)で表されるエポキシ樹脂の芳香環を核水素化して得られる水素化エポキシ樹脂(B);硬化剤(C)及び硬化促進剤(D)を含有する。 The epoxy resin composition for optical semiconductor encapsulation of the present invention has the general formula (1) (wherein X is a substituent containing an epoxy group, R 1 is a substituted or unsubstituted alkyl group having 1 to 14 carbon atoms, It shows an alkenyl carboxy group of an aryl group or a 3 to 5 carbon atoms having 6 to 14 carbon atoms, R 2 represents an alkyl group having 1 to 4 carbon atoms, a is an integer of 0 to 2, R 1 is more A plurality of R 1 s may be the same or different from each other.) Or an alkoxysilicon compound represented by the general formula (1) and the above general formula (2) (In the formula, X represents a substituent containing an epoxy group, R 3 represents a substituted or unsubstituted alkyl group having 1 to 14 carbon atoms or an aryl group having 6 to 14 carbon atoms, and R 4 represents a group having 1 to 4 carbon atoms. An alkyl group, k and b are integers from 0 to 3; b is 0 to 3, when there are a plurality of R 3, the alkoxy silicon compound represented by a plurality of R 3 may be be the same or different from each other.) By engaging cohydrolysis condensation The resulting epoxy resin (A); the above general formula (3) (wherein R 5 may be the same or different and each represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms; An integer of 1 to 4, n is an average value and represents a positive number of 1 to 6.) A hydrogenated epoxy resin (B) obtained by nuclear hydrogenation of an aromatic ring of an epoxy resin represented by: Curing agent (C) And a curing accelerator (D).
本発明の光半導体封止用エポキシ樹脂組成物に含まれるエポキシ樹脂(A)を製造するために使用する一般式(1)及び一般式(2)のアルコキシケイ素化合物中のエポキシ基を有する置換基としてはエポキシ基を有していれば特に制限されず、同一でも異なっていてもよく、例えば、β−グリシドキシエチル基、γ−グリシドキシプロピル基、γ−グリシドキシブチル基等のグリシドキシ基が結合した炭素数1〜4のアルキル基、β−(3,4−エポキシシクロヘキシル)エチル基、γ−(3,4−エポキシシクロヘキシル)プロピル基、β−(3,4−エポキシシクロヘプチル)エチル基、β−(3,4−エポキシシクロヘキシル)プロピル基、β−(3,4−エポキシシクロヘキシル)ブチル基、β−(3,4−エポキシシクロヘキシル)ペンチル基等のエポキシ基を持った炭素数5〜8のシクロアルキル基で置換された炭素数1〜5のアルキル基、グリシジル基等が挙げられる。 Substituents having an epoxy group in the alkoxysilicon compounds of the general formula (1) and the general formula (2) used for producing the epoxy resin (A) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention As long as it has an epoxy group, it may be the same or different, for example, β-glycidoxyethyl group, γ-glycidoxypropyl group, γ-glycidoxybutyl group, etc. C1-C4 alkyl group to which glycidoxy group is bonded, β- (3,4-epoxycyclohexyl) ethyl group, γ- (3,4-epoxycyclohexyl) propyl group, β- (3,4-epoxycycloheptyl) ) Ethyl group, β- (3,4-epoxycyclohexyl) propyl group, β- (3,4-epoxycyclohexyl) butyl group, β- (3,4-epoxycyclohexyl) pe Epoxy group with cycloalkyl group-substituted alkyl group of 1 to 5 carbon atoms having a carbon number of 5-8 such as methyl group, a glycidyl group, and the like.
これらの中で、一般式(1)におけるXとしてのエポキシ基を有する置換基としては、炭素数1〜3のアルキル基にグリシドキシ基が結合したグリシドキシアルキル基、エポキシ基を持った炭素数5〜8のシクロアルキル基で置換された炭素数1〜3のアルキル基が好ましく、具体的には例えば、β−グリシドキシエチル基、γ−グリシドキシプロピル基、β−(3,4−エポキシシクロヘキシル)エチル基が好ましい。 Among these, as the substituent having an epoxy group as X in the general formula (1), a glycidoxyalkyl group in which a glycidoxy group is bonded to an alkyl group having 1 to 3 carbon atoms, or a carbon number having an epoxy group A C1-C3 alkyl group substituted with a 5-8 cycloalkyl group is preferable, and specifically, for example, β-glycidoxyethyl group, γ-glycidoxypropyl group, β- (3,4 -Epoxycyclohexyl) ethyl group is preferred.
又、一般式(1)におけるR2、一般式(2)におけるR4としては、メチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、i−ブチル基、t−ブチル基等の炭素数1〜4のアルキル基が挙げられ、相溶性、反応性等の反応条件の観点から、メチル基又はエチル基が好ましい。 As the R 4 R 2, in the general formula (2) in the general formula (1), a methyl group, an ethyl group, n- propyl group, i- propyl, n- butyl group, i- butyl, t- C1-C4 alkyl groups, such as a butyl group, are mentioned, From a viewpoint of reaction conditions, such as compatibility and reactivity, a methyl group or an ethyl group is preferable.
本発明の光半導体封止用エポキシ樹脂組成物に含まれるエポキシ樹脂(A)を製造するために使用する一般式(1)で表される化合物におけるR1、一般式(2)で表される化合物におけるR3としては、メチル基、エチル基、n−プロピル基、i−プロピル基、n−ブチル基、t−ブチル基、n−ペンチル基、i−ペンチル基、n−へキシル基、n−オクチル基、2−エチルヘキシル基、n−ノニル基、n−デシル基、n−ドデシル基、n−テトラデシル基等の直鎖状又は分岐状の炭素数1〜14のアルキル基;後記の置換基を有する該アルキル基;フェニル基、ナフチル基等の炭素数6〜14のアリール基が挙げられる。
又、R1における炭素数3〜5のアルケニルカルボキシ基としては、例えば、アクリロキシ基、メタクリロキシ基等が挙げられる。
R 1 in the compound represented by the general formula (1) used for producing the epoxy resin (A) contained in the epoxy resin composition for sealing an optical semiconductor of the present invention, represented by the general formula (2) R 3 in the compound includes methyl group, ethyl group, n-propyl group, i-propyl group, n-butyl group, t-butyl group, n-pentyl group, i-pentyl group, n-hexyl group, n A linear or branched alkyl group having 1 to 14 carbon atoms such as an octyl group, a 2-ethylhexyl group, an n-nonyl group, an n-decyl group, an n-dodecyl group, and an n-tetradecyl group; An alkyl group having 6 to 14 carbon atoms such as a phenyl group and a naphthyl group.
As the alkenyl carboxy group of 3 to 5 carbon atoms in R 1, for example, acryloxy group, methacryloxy group, and the like.
置換基を有するアルキル基における置換基としては、ハロゲン原子(塩素原子、臭素原子等)、ビニル基、アミノ基、ニトロ基、メトキシ基、エトキシ基、(メタ)アクリロキシ基等が挙げられる。 Examples of the substituent in the alkyl group having a substituent include a halogen atom (chlorine atom, bromine atom, etc.), a vinyl group, an amino group, a nitro group, a methoxy group, an ethoxy group, and a (meth) acryloxy group.
置換位置による異性体が存在する場合はそれらすべての化合物が使用可能であり、1〜最大置換可能数までの置換基を有するすべての化合物を使用することができる。
これらの中で、非置換若しくはメタクリロキシ基で置換された炭素数1〜6のアルキル基、又はフェニル基が特に好ましい。
When there are isomers depending on the substitution position, all these compounds can be used, and all compounds having 1 to the maximum number of substitutable groups can be used.
Among these, an alkyl group having 1 to 6 carbon atoms which is unsubstituted or substituted with a methacryloxy group, or a phenyl group is particularly preferable.
本発明の光半導体封止用エポキシ樹脂組成物に含まれるエポキシ樹脂(A)を製造するために使用する一般式(1)で表されるアルコキシケイ素化合物として好ましくは、β−グリシドキシエチルトリメトキシシラン、β−グリシドキシエチルトリエトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルトリエトキシシラン、γ−グリシドキシプロピルメチルジメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルトリエトキシシラン等が挙げられる。これら一般式(1)で表されるアルコキシケイ素化合物は、単独で用いても2種以上を用いてもよい。 The alkoxysilicon compound represented by the general formula (1) used for producing the epoxy resin (A) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention is preferably β-glycidoxyethyltri Methoxysilane, β-glycidoxyethyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyl Examples include diethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltriethoxysilane, and the like. These alkoxysilicon compounds represented by the general formula (1) may be used alone or in combination of two or more.
本発明の光半導体封止用エポキシ樹脂組成物に含まれるエポキシ樹脂(A)を製造するために使用する一般式(2)で表されるアルコキシケイ素化合物として好ましくは、β−グリシドキシエチルメチルジメトキシシラン、β−グリシドキシエチルメチルジエトキシシラン、γ−グリシドキシプロピルメチルジメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルメチルジメトキシシラン、β−(3,4−エポキシシクロヘキシル)エチルメチルジエトキシシラン等が挙げられる。 The alkoxy silicon compound represented by the general formula (2) used for producing the epoxy resin (A) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention is preferably β-glycidoxyethyl methyl. Dimethoxysilane, β-glycidoxyethylmethyldiethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethylmethyldimethoxysilane, β- (3,4-epoxycyclohexyl) ethylmethyldiethoxysilane and the like can be mentioned.
又、エポキシ基を有しない化合物を用いることもできる(kが0の場合)。このようなアルコキシケイ素化合物として好ましくは、メチルトリメトキシシラン、メチルトリエトキシシラン、ヘキシルトリメトキシシラン、ヘキシルトリエトキシシラン、オクチルトリエトキシシラン、デシルトリメトキシシラン、ジメチルジメトキシシラン、ジメチルジエトキシシラン、ヘキシルメチルジメトキシシラン、ジフェニルジメトキシシラン、ジフェニルジエトキシシラン、3−メタクリロキシプロピルメチルジメトキシシラン、3−メタクリロキシプロピルメチルジエトキシシラン、3−アクリロキシプロピルメチルジメトキシシラン、3−アクリロキシプロピルメチルジエトキシシラン等が挙げられる。これら一般式(2)で表されるアルコキシケイ素化合物は、単独で用いても2種以上を用いてもよい。 A compound having no epoxy group can also be used (when k is 0). As such an alkoxysilicon compound, methyltrimethoxysilane, methyltriethoxysilane, hexyltrimethoxysilane, hexyltriethoxysilane, octyltriethoxysilane, decyltrimethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, hexyl are preferable. Methyldimethoxysilane, diphenyldimethoxysilane, diphenyldiethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-acryloxypropylmethyldimethoxysilane, 3-acryloxypropylmethyldiethoxysilane Etc. These alkoxysilicon compounds represented by the general formula (2) may be used alone or in combination of two or more.
本発明の光半導体封止用エポキシ樹脂組成物に含有されるエポキシ樹脂(A)は、上記一般式(1)のアルコキシケイ素化合物同士、又は上記一般式(1)と上記一般式(2)で示されるアルコキシケイ素化合物とを、共加水分解縮合することにより得ることができる(以下、共加水分解縮合のことを単に縮合と記す。)。
該縮合反応における一般式(1)で示される化合物及び一般式(2)で示される化合物のそれぞれの使用割合は、所望する樹脂の物性やそれを含む組成物の硬化物性に応じて適宜決定すればよい。
又、該縮合反応に使用する水の量は、反応系全体のアルコキシ基1モルに対し通常0.1〜1.5モル程度、好ましくは0.2〜1.2モル程度である。
The epoxy resin (A) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention is an alkoxysilicon compound of the above general formula (1) or the above general formula (1) and the above general formula (2). The alkoxysilicon compound shown can be obtained by cohydrolytic condensation (hereinafter, the cohydrolytic condensation is simply referred to as condensation).
The ratio of each of the compound represented by the general formula (1) and the compound represented by the general formula (2) in the condensation reaction is appropriately determined according to the desired physical properties of the resin and the cured physical properties of the composition containing the resin. That's fine.
The amount of water used in the condensation reaction is usually about 0.1 to 1.5 mol, preferably about 0.2 to 1.2 mol, per 1 mol of alkoxy groups in the entire reaction system.
上記の縮合反応には通常触媒を使用し、該触媒としては水中で塩基性を示す化合物であれば特に限定されず、例えば、水酸化ナトリウム、水酸化カリウム、水酸化リチウム、水酸化セシウム等のアルカリ金属水酸化物、炭酸ナトリウム、炭酸カリウム、炭酸水素ナトリウム、炭酸水素カリウム等のアルカリ金属炭酸塩等の無機塩基;アンモニア;トリエチルアミン、ジエチレントリアミン、n−ブチルアミン、ジメチルアミノエタノール、トリエタノールアミン、水酸化テトラメチルアンモニウム等の有機塩基が挙げられる。中でも、特に生成物からの触媒除去が容易である点で無機塩基又はアンモニアが好ましい。
該触媒の添加量は、反応系中のアルコキシケイ素化合物の合計重量に対し、通常0.001〜7.5重量%、好ましくは0.01〜5重量%である。
In the above condensation reaction, a catalyst is usually used, and the catalyst is not particularly limited as long as it is a compound that shows basicity in water. For example, sodium hydroxide, potassium hydroxide, lithium hydroxide, cesium hydroxide, etc. Inorganic bases such as alkali metal carbonates, alkali metal carbonates such as sodium carbonate, potassium carbonate, sodium hydrogen carbonate, potassium hydrogen carbonate; ammonia; triethylamine, diethylenetriamine, n-butylamine, dimethylaminoethanol, triethanolamine, hydroxylated An organic base such as tetramethylammonium may be mentioned. Among these, an inorganic base or ammonia is preferable because the catalyst can be easily removed from the product.
The addition amount of the catalyst is usually 0.001 to 7.5% by weight, preferably 0.01 to 5% by weight, based on the total weight of the alkoxysilicon compound in the reaction system.
縮合反応は、無溶剤又は溶剤中で行うことができる。該溶剤としては、反応に使用するアルコキシケイ素化合物を溶解する溶剤であれば特に制限はなく、例えば、ジメチルホルムアミド、ジメチルアセトアミド、テトラヒドロフラン、メチルエチルケトン、メチルイソブチルケトンのような非プロトン性の極性溶媒、トルエン、キシレンのような芳香族炭化水素等が挙げられる。中でも非プロトン性の極性溶媒が好ましい。
溶剤を使用する場合、その使用量は反応が円滑に進行する範囲であれば特に制限はないが、一般式(1)と一般式(2)の化合物の合計重量100部に対して通常50〜900重量部程度である。
反応温度は触媒量にもよるが、通常20〜160℃、好ましくは40〜140℃である。又、反応時間は通常1〜12時間である。
The condensation reaction can be carried out without a solvent or in a solvent. The solvent is not particularly limited as long as it is a solvent that dissolves the alkoxysilicon compound used in the reaction. For example, aprotic polar solvents such as dimethylformamide, dimethylacetamide, tetrahydrofuran, methyl ethyl ketone, and methyl isobutyl ketone, toluene And aromatic hydrocarbons such as xylene. Of these, aprotic polar solvents are preferred.
When the solvent is used, the amount used is not particularly limited as long as the reaction proceeds smoothly, but usually 50 to 100 parts per 100 parts by weight of the total weight of the compounds of the general formula (1) and the general formula (2). About 900 parts by weight.
While the reaction temperature depends on the amount of catalyst, it is generally 20 to 160 ° C, preferably 40 to 140 ° C. The reaction time is usually 1 to 12 hours.
本発明の光半導体封止用エポキシ樹脂組成物に含有されるエポキシ樹脂(A)の分子量は、重量平均分子量で400〜50000のものが好ましく、750〜30000のものがより好ましい。重量平均分子量が400未満の場合は耐熱性の低下、50000より大きい場合は組成物の粘度の上昇といった組成物の物性が低下する場合がある。 The molecular weight of the epoxy resin (A) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention is preferably 400 to 50000 in weight average molecular weight, more preferably 750 to 30000. When the weight average molecular weight is less than 400, the physical properties of the composition may decrease, such as a decrease in heat resistance, and when it is greater than 50,000, the viscosity of the composition may increase.
本発明の光半導体封止用エポキシ樹脂組成物に含有される上記一般式(3)で表されるエポキシ樹脂の芳香環を核水素化して得られる水素化エポキシ樹脂(B)の製造に使用する一般式(3)で表されるエポキシ樹脂は、例えば、特開平5−117350号公報に記載されている方法又はそれに準じた方法により得ることができる。又、市販品(商品名NC−3000、日本化薬株式会社製)を入手することも可能である。 Used for producing a hydrogenated epoxy resin (B) obtained by nuclear hydrogenation of the aromatic ring of the epoxy resin represented by the general formula (3) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention. The epoxy resin represented by the general formula (3) can be obtained, for example, by a method described in JP-A-5-117350 or a method analogous thereto. It is also possible to obtain a commercial product (trade name NC-3000, manufactured by Nippon Kayaku Co., Ltd.).
上記一般式(3)で表されるエポキシ樹脂の核水素化は通常、水素添加触媒の存在下、一般式(3)で表されるエポキシ樹脂と水素ガスを接触させて行う。水素添加触媒としては、白金族元素を活性成分とする触媒を使用すればよい。白金族元素の中ではルテニウム又はロジウムが好ましい。又、炭素系担体に該活性成分を担持して成る触媒が好ましい。該炭素系担体としては、活性炭、グラファイト、カーボンブラック等が挙げられる。 The nuclear hydrogenation of the epoxy resin represented by the general formula (3) is usually performed by bringing the epoxy resin represented by the general formula (3) into contact with hydrogen gas in the presence of a hydrogenation catalyst. A catalyst having a platinum group element as an active component may be used as the hydrogenation catalyst. Of the platinum group elements, ruthenium or rhodium is preferred. Further, a catalyst obtained by supporting the active component on a carbon-based support is preferable. Examples of the carbon-based carrier include activated carbon, graphite, and carbon black.
これら上記の触媒は含浸法等の公知の方法で調製したものを使用しても、水素化反応用触媒として市販されているものを使用してもよい。市販品としては、「5%ルテニウム/カーボン触媒」、「5%ロジウム/カーボン触媒」(いずれもエヌイーケムキャット社製)等が挙げられる。触媒の使用量は特に限定されないが、触媒量が少ないと反応に長時間を要することになるため、通常は一般式(3)のエポキシ樹脂に対しルテニウム又はロジウム重量で0.05重量%以上が好ましく、0.1〜2重量%の範囲が更に好ましい。 As these catalysts, those prepared by a known method such as an impregnation method may be used, or those commercially available as hydrogenation reaction catalysts may be used. Examples of commercially available products include “5% ruthenium / carbon catalyst”, “5% rhodium / carbon catalyst” (both manufactured by NV Chemcat). The amount of the catalyst used is not particularly limited. However, since the reaction takes a long time if the amount of the catalyst is small, it is usually 0.05% by weight or more in terms of ruthenium or rhodium with respect to the epoxy resin of the general formula (3). The range of 0.1 to 2% by weight is more preferable.
水素添加反応は通常溶媒中で行う。該溶媒としては、水素化に対して安定で触媒に対し被毒性のないエーテル系溶媒、エステル系溶媒、アルコール系溶媒(例えば、メタノール、エタノール、イソプロパノール等)、パラフィン系溶媒(例えば、ヘキサン、ヘプタン、オクタン等)等が使用される。中でも、ジエチルエーテル、イソプロピルエーテル、メチル t−ブチル エーテル、エチレングリコール ジメチルエーテル、テトラヒドロフラン、ジオキサン、ジオキソラン等の鎖状又は環状のエーテル系溶媒、酢酸エチル、酢酸ブチル等のエステル系溶媒、あるいはエチレングリコールメチルエーテルアセテート等のエーテルエステル系溶媒等が好適に使用される。
これらの溶媒は、単独使用の他、併用することもできる。溶媒の使用量は特に限定されないが、通常は一般式(3)のエポキシ樹脂に対して溶媒10〜1000重量%、好ましくは20〜500重量%の範囲である。
The hydrogenation reaction is usually performed in a solvent. Examples of the solvent include ether solvents, ester solvents, alcohol solvents (for example, methanol, ethanol, isopropanol, etc.), paraffin solvents (for example, hexane, heptane, etc.) that are stable to hydrogenation and are not toxic to the catalyst. , Octane, etc.). Among them, linear or cyclic ether solvents such as diethyl ether, isopropyl ether, methyl t-butyl ether, ethylene glycol dimethyl ether, tetrahydrofuran, dioxane and dioxolane, ester solvents such as ethyl acetate and butyl acetate, or ethylene glycol methyl ether An ether ester solvent such as acetate is preferably used.
These solvents can be used alone or in combination. Although the usage-amount of a solvent is not specifically limited, Usually, the solvent is 10-1000 weight% with respect to the epoxy resin of General formula (3), Preferably it is the range of 20-500 weight%.
水素添加反応の条件も一般に芳香環の核水素化に使用する条件でよく、反応温度及び反応圧力は水素添加反応が完結できる条件であれば特に限定されない。実用的な条件としては、反応温度が10〜200℃、好ましくは30〜150℃の範囲であり、反応圧力が0.5〜30MPa、好ましくは1.5〜15MPaの範囲である。 The conditions for the hydrogenation reaction may generally be those used for nuclear hydrogenation of the aromatic ring, and the reaction temperature and reaction pressure are not particularly limited as long as the hydrogenation reaction can be completed. Practical conditions include a reaction temperature in the range of 10 to 200 ° C., preferably 30 to 150 ° C., and a reaction pressure in the range of 0.5 to 30 MPa, preferably 1.5 to 15 MPa.
反応時間は、触媒の使用量や上記の反応条件によっても異なるが、通常は0.5〜20時間である。又、水素添加反応の反応形式は、回分式に限定されるものではなく、ルテニウム又はロジウム担持触媒を適当な形状に成型して固定床反応器に充填し、流通式で行うこともできる。 The reaction time varies depending on the amount of catalyst used and the above reaction conditions, but is usually 0.5 to 20 hours. Further, the reaction mode of the hydrogenation reaction is not limited to a batch type, and it can be carried out by a flow type by forming a ruthenium or rhodium supported catalyst into an appropriate shape and filling it in a fixed bed reactor.
反応終了後、反応液から適当な手段により触媒を分離し、次いで通常の蒸留等の手段により溶媒を留去すれば、そのまま目的とする水素化エポキシ樹脂(B)を得ることができる。
水素化エポキシ樹脂(B)における核水素化率は40〜100%、好ましくは60〜100%である。
After completion of the reaction, the target hydrogenated epoxy resin (B) can be obtained as it is by separating the catalyst from the reaction solution by an appropriate means and then distilling off the solvent by an ordinary means such as distillation.
The nuclear hydrogenation rate in the hydrogenated epoxy resin (B) is 40 to 100%, preferably 60 to 100%.
本発明の光半導体封止用エポキシ樹脂組成物に含有されるエポキシ樹脂(A)とエポキシ樹脂(B)の重量比は、90/10〜10/90の範囲が好ましい。この範囲を外れると併用する効果が少ない。 The weight ratio of the epoxy resin (A) and the epoxy resin (B) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention is preferably in the range of 90/10 to 10/90. When outside this range, the combined effect is small.
又、本発明の光半導体封止用エポキシ樹脂組成物には物性の妨げにならない範囲内でエポキシ樹脂(A)及びエポキシ樹脂(B)以外の他のエポキシ樹脂(E)を併用することができる。他のエポキシ樹脂(E)を併用する場合、エポキシ樹脂(A)とエポキシ樹脂(B)の合計量は、光半導体封止用エポキシ樹脂組成物に含有されるエポキシ樹脂の総量中に占める割合が20〜95重量%とすることが好ましく、30〜95重量%が特に好ましい。 In addition, the epoxy resin composition for optical semiconductor encapsulation of the present invention can be used in combination with an epoxy resin (E) other than the epoxy resin (A) and the epoxy resin (B) within a range that does not hinder physical properties. . When other epoxy resins (E) are used in combination, the total amount of the epoxy resin (A) and the epoxy resin (B) is a proportion of the total amount of the epoxy resin contained in the epoxy resin composition for optical semiconductor encapsulation. It is preferable to set it as 20 to 95 weight%, and 30 to 95 weight% is especially preferable.
他のエポキシ樹脂(E)の具体例としては、ポリフェノール化合物のグリシジルエーテル化物である多官能エポキシ樹脂、各種ノボラック樹脂のグリシジルエーテル化物である多官能エポキシ樹脂、芳香族エポキシ樹脂の核水素化物、脂環式エポキシ樹脂、脂肪族系エポキシ樹脂、複素環式エポキシ樹脂、グリシジルエステル系エポキシ樹脂、グリシジルアミン系エポキシ樹脂、ハロゲン化フェノール類をグリシジル化したエポキシ樹脂等が挙げられる。
ポリフェノール化合物のグリシジルエーテル化物である多官能エポキシ樹脂としては、ビスフェノールA、ビスフェノールF、ビスフェノールS、4,4’−ビフェノール、テトラメチルビスフェノールA、ジメチルビスフェノールA、テトラメチルビスフェノールF、ジメチルビスフェノールF、テトラメチルビスフェノールS、ジメチルビスフェノールS、テトラメチル−4,4’−ビフェノール、ジメチル−4,4’−ビフェニルフェノール、1−(4−ヒドロキシフェニル)−2−[4−(1,1−ビス−(4−ヒドロキシフェニル)エチル)フェニル]プロパン、2,2’−メチレン−ビス(4−メチル−6−t−ブチルフェノール)、4,4’−ブチリデン−ビス(3−メチル−6−t−ブチルフェノール)、トリスヒドロキシフェニルメタン、レゾルシノール、ハイドロキノン、2,6−ジ−t−ブチルハイドロキノン、ピロガロール、ジイソプロピリデン骨格を有するフェノール類、1,1−ジ(4−ヒドロキシフェニル)フルオレン等のフルオレン骨格を有するフェノール類、フェノール化ポリブタジエン等のポリフェノール化合物のグリシジルエーテル化物である多官能エポキシ樹脂が挙げられる。
Specific examples of other epoxy resins (E) include polyfunctional epoxy resins that are glycidyl etherified products of polyphenol compounds, polyfunctional epoxy resins that are glycidyl etherified products of various novolak resins, nuclear hydrides of aromatic epoxy resins, and fats. Examples thereof include cyclic epoxy resins, aliphatic epoxy resins, heterocyclic epoxy resins, glycidyl ester epoxy resins, glycidyl amine epoxy resins, epoxy resins obtained by glycidylation of halogenated phenols, and the like.
Polyfunctional epoxy resins that are glycidyl etherification products of polyphenol compounds include bisphenol A, bisphenol F, bisphenol S, 4,4′-biphenol, tetramethylbisphenol A, dimethyl bisphenol A, tetramethyl bisphenol F, dimethyl bisphenol F, tetra Methyl bisphenol S, dimethyl bisphenol S, tetramethyl-4,4′-biphenol, dimethyl-4,4′-biphenylphenol, 1- (4-hydroxyphenyl) -2- [4- (1,1-bis- ( 4-hydroxyphenyl) ethyl) phenyl] propane, 2,2′-methylene-bis (4-methyl-6-tert-butylphenol), 4,4′-butylidene-bis (3-methyl-6-tert-butylphenol) , Trishydroxypheny Methane, resorcinol, hydroquinone, 2,6-di-t-butylhydroquinone, pyrogallol, phenols having a diisopropylidene skeleton, phenols having a fluorene skeleton such as 1,1-di (4-hydroxyphenyl) fluorene, phenol The polyfunctional epoxy resin which is the glycidyl etherification product of polyphenol compounds, such as chlorinated polybutadiene, is mentioned.
各種ノボラック樹脂のグリシジルエーテル化物である多官能エポキシ樹脂としては、フェノール、クレゾール類、エチルフェノール類、ブチルフェノール類、オクチルフェノール類、ビスフェノールA、ビスフェノールF、ビスフェノールS、ナフトール類等の各種フェノールを原料とするノボラック樹脂、キシリレン骨格含有フェノールノボラック樹脂、ジシクロペンタジエン骨格含有フェノールノボラック樹脂、ビフェニル骨格含有フェノールノボラック樹脂、フルオレン骨格含有フェノールノボラック樹脂等の各種ノボラック樹脂のグリシジルエーテル化物が挙げられる。
エポキシ樹脂(B)以外の芳香族エポキシ樹脂の核水素化物としてはフェノール化合物(例えば、ビスフェノールA、ビスフェノールF、ビスフェノールS、4,4’−ビフェノール等)のグリシジルエーテル化物又は各種フェノール(例えば、フェノール、クレゾール類、エチルフェノール類、ブチルフェノール類、オクチルフェノール類、ビスフェノールA、ビスフェノールF、ビスフェノールS、ナフトール類等)を原料とするノボラック樹脂のグリシジルエーテル化物の核水素化物が挙げられる。
Polyfunctional epoxy resins that are glycidyl etherified products of various novolak resins are phenols, cresols, ethylphenols, butylphenols, octylphenols, bisphenol A, bisphenol F, bisphenol S, naphthols and other various phenols. Examples thereof include glycidyl ethers of various novolak resins such as novolak resins, xylylene skeleton-containing phenol novolak resins, dicyclopentadiene skeleton-containing phenol novolak resins, biphenyl skeleton-containing phenol novolak resins, and fluorene skeleton-containing phenol novolak resins.
Examples of the nuclear hydride of the aromatic epoxy resin other than the epoxy resin (B) include glycidyl etherified products of phenol compounds (for example, bisphenol A, bisphenol F, bisphenol S, 4,4′-biphenol) or various phenols (for example, phenol). , Cresols, ethylphenols, butylphenols, octylphenols, bisphenol A, bisphenol F, bisphenol S, naphthols, etc.) as a raw material.
脂環式エポキシ樹脂としては、3,4−エポキシシクロヘキシルメチル 3’,4’−エポキシシクロヘキシルカルボキシレート等のシクロヘキサン等の環状脂肪族骨格を有する脂環式エポキシ樹脂が挙げられる。
脂肪族系エポキシ樹脂としては、1,4−ブタンジオール、1,6−ヘキサンジオール、ポリエチレングリコール、ポリプロピレングリコール、ペンタエリスリトール、キシリレングリコール誘導体等の多価アルコールのグリシジルエーテル類が挙げられる。
Examples of the alicyclic epoxy resin include alicyclic epoxy resins having a cyclic aliphatic skeleton such as cyclohexane such as 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexylcarboxylate.
Examples of the aliphatic epoxy resin include glycidyl ethers of polyhydric alcohols such as 1,4-butanediol, 1,6-hexanediol, polyethylene glycol, polypropylene glycol, pentaerythritol, and xylylene glycol derivatives.
複素環式エポキシ樹脂としては、イソシアヌル環、ヒダントイン環等の複素環を有する複素環式エポキシ樹脂が挙げられる。
グリシジルエステル系エポキシ樹脂としては、ヘキサヒドロフタル酸ジグリシジルエステル、テトラヒドロフタル酸ジグリシジルエステル等のカルボン酸類からなるエポキシ樹脂が挙げられる。
Examples of the heterocyclic epoxy resin include heterocyclic epoxy resins having a heterocyclic ring such as an isocyanuric ring and a hydantoin ring.
Examples of the glycidyl ester epoxy resin include epoxy resins made of carboxylic acids such as hexahydrophthalic acid diglycidyl ester and tetrahydrophthalic acid diglycidyl ester.
グリシジルアミン系エポキシ樹脂としては、アニリン、トルイジン、p−フェニレンジアミン、m−フェニレンジアミン、ジアミノジフェニルメタン誘導体、ジアミノメチルベンゼン誘導体等のアミン類をグリシジル化したエポキシ樹脂が挙げられる。
ハロゲン化フェノール類をグリシジル化したエポキシ樹脂としては、ブロム化ビスフェノールA、ブロム化ビスフェノールF、ブロム化ビスフェノールS、ブロム化フェノールノボラック、ブロム化クレゾールノボラック、クロル化ビスフェノールS、クロル化ビスフェノールA等のハロゲン化フェノール類をグリシジルエーテル化したエポキシ樹脂が挙げられる。
Examples of the glycidylamine-based epoxy resin include epoxy resins obtained by glycidylating amines such as aniline, toluidine, p-phenylenediamine, m-phenylenediamine, diaminodiphenylmethane derivative, and diaminomethylbenzene derivative.
Examples of epoxy resins obtained by glycidylation of halogenated phenols include halogens such as brominated bisphenol A, brominated bisphenol F, brominated bisphenol S, brominated phenol novolac, brominated cresol novolac, chlorinated bisphenol S, and chlorinated bisphenol A. An epoxy resin obtained by glycidyl etherification of a fluorinated phenol is exemplified.
これらエポキシ樹脂(E)の内、透明性の観点から着色性の少ないものがより好ましく、具体的には、ビスフェノールA、ビスフェノールF、ビスフェノールS、4,4’−ビフェノール、テトラメチル−4,4’−ビフェノール、1−(4−ヒドロキシフェニル)−2−[4−(1,1−ビス−(4−ヒドロキシフェニル)エチル)フェニル]プロパン、トリスヒドロキシフェニルメタン、レゾルシノール、2,6−ジ−t−ブチルハイドロキノン、ジイソプロピリデン骨格を有するフェノール類、1,1−ジ(4−ヒドロキシフェニル)フルオレン等のフルオレン骨格を有するフェノール類のグリシジルエーテル化物である多官能エポキシ樹脂;フェノール、クレゾール類、ビスフェノールA、ビスフェノールS、ナフトール類等の各種フェノールを原料とするノボラック樹脂、ジシクロペンタジエン骨格含有フェノールノボラック樹脂、ビフェニル骨格含有フェノールノボラック樹脂、フルオレン骨格含有フェノールノボラック樹脂等の各種ノボラック樹脂のグリシジルエーテル化物;フェノール化合物(ビスフェノールA、ビスフェノールF、ビスフェノールS、4,4’−ビフェノール等)のグリシジルエーテル化物又は各種フェノール(フェノール、クレゾール類、エチルフェノール類、ブチルフェノール類、オクチルフェノール類、ビスフェノールA、ビスフェノールF、ビスフェノールS、ナフトール類等)を原料とするノボラック樹脂のグリシジルエーテル化物の核水素化物;3,4−エポキシシクロヘキシルメチル 3’,4’−エポキシシクロヘキシルカルボキシレート等のシクロヘキサン骨格を有する脂環式エポキシ樹脂;1,6−ヘキサンジオール、ポリエチレングリコール、ポリプロピレングリコールのグリシジルエーテル化物類;トリグリシジルイソシアヌレート;ヘキサヒドロフタル酸ジグリシジルエステルが好ましい。
更に、これらエポキシ樹脂は耐熱性付与等の必要に応じ1種又は2種以上の混合物として使用することができる。
Among these epoxy resins (E), those having less colorability are more preferable from the viewpoint of transparency. Specifically, bisphenol A, bisphenol F, bisphenol S, 4,4′-biphenol, tetramethyl-4,4 '-Biphenol, 1- (4-hydroxyphenyl) -2- [4- (1,1-bis- (4-hydroxyphenyl) ethyl) phenyl] propane, trishydroxyphenylmethane, resorcinol, 2,6-di- polyfunctional epoxy resins that are glycidyl etherified products of phenols having a fluorene skeleton such as t-butylhydroquinone, phenols having a diisopropylidene skeleton, 1,1-di (4-hydroxyphenyl) fluorene; phenols, cresols, Various types of bisphenol A, bisphenol S, naphthols, etc. Glycidyl etherified products of various novolak resins such as novolak resin using diol, dicyclopentadiene skeleton-containing phenol novolak resin, biphenyl skeleton-containing phenol novolak resin, fluorene skeleton-containing phenol novolak resin; phenol compounds (bisphenol A, bisphenol F, bisphenol S, 4,4'-biphenol, etc.) or various phenols (phenol, cresols, ethylphenols, butylphenols, octylphenols, bisphenol A, bisphenol F, bisphenol S, naphthols, etc.) Nuclear hydride of glycidyl etherified product of novolak resin; 3,4-epoxycyclohexylmethyl 3 ′, 4′-epoxycyclohexylcarboxylate Alicyclic epoxy resin having a cyclohexane skeleton of bets like; 1,6-hexanediol, polyethylene glycol, glycidyl ethers such as polypropylene glycol; triglycidyl isocyanurate; hexahydrophthalic acid diglycidyl ester.
Furthermore, these epoxy resins can be used as one kind or a mixture of two or more kinds as required for imparting heat resistance.
本発明の光半導体封止用エポキシ樹脂組成物に含有される硬化剤(C)としては、通常、エポキシ樹脂の硬化剤として使用されているアミン系化合物、アミド系化合物、酸無水物系化合物、フェノール系化合物等を特に制限無く使用できる。
具体的には例えば、ジアミノジフェニルメタン、ジエチレントリアミン、トリエチレンテトラミン、ジアミノジフェニルスルホン、イソホロンジアミン、ジシアンジアミド、テトラエチレンペンタミン、ジメチルベンジルアミン、ケチミン化合物等のアミン系化合物、リノレン酸の2量体とエチレンジアミンより合成されるポリアミド樹脂等のアミド系化合物、無水フタル酸、無水トリメリット酸、無水ピロメリット酸、無水マレイン酸、テトラヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸、無水メチルナジック酸、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸等の酸無水物系化合物、ビスフェノール類若しくはフェノール類(フェノール、アルキル置換フェノール、ナフトール、アルキル置換ナフトール、ジヒドロキシベンゼン、ジヒドロキシナフタレン等)と各種アルデヒドとの重縮合物等、フェノール類と各種ジエン化合物との重合物、フェノール類と芳香族ジメチロールとの重縮合物、ビスメトキシメチルビフェニルとナフトール類若しくはフェノール類との縮合物、ビフェノール類及びこれらの変性物等のフェノール系化合物、イミダゾール類、三フッ化硼素−アミン錯体、グアニジン誘導体等が挙げられる。
As the curing agent (C) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention, an amine compound, an amide compound, an acid anhydride compound, ordinarily used as a curing agent for an epoxy resin, Phenol compounds can be used without particular limitation.
Specifically, for example, an amine compound such as diaminodiphenylmethane, diethylenetriamine, triethylenetetramine, diaminodiphenylsulfone, isophoronediamine, dicyandiamide, tetraethylenepentamine, dimethylbenzylamine, ketimine compound, a dimer of linolenic acid and ethylenediamine Amide compounds such as polyamide resin to be synthesized, phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methyl nadic anhydride, hexahydrophthalic anhydride, Acid anhydride compounds such as methylhexahydrophthalic anhydride, bisphenols or phenols (phenol, alkyl-substituted phenol, naphthol, alkyl-substituted naphthol, dihydr Roxybenzene, dihydroxynaphthalene, etc.) and polycondensates of various aldehydes, polymers of phenols and various diene compounds, polycondensates of phenols and aromatic dimethylol, bismethoxymethylbiphenyl and naphthols or phenols Condensates, phenols such as biphenols and modified products thereof, imidazoles, boron trifluoride-amine complexes, guanidine derivatives and the like.
該硬化剤(C)の使用量は、光半導体封止用エポキシ樹脂組成物中のエポキシ基1当量に対して0.2〜1.5当量が好ましく、0.3〜1.2当量が特に好ましい。
又、硬化剤(C)としてベンジルジメチルアミン等の3級アミンを使用する場合、その使用量は、光半導体封止用エポキシ樹脂組成物に含有されるエポキシ樹脂の総量に対して0.3〜20重量%程度が好ましく、0.5〜10重量%程度が特に好ましい。
The amount of the curing agent (C) used is preferably 0.2 to 1.5 equivalents, particularly 0.3 to 1.2 equivalents, based on 1 equivalent of epoxy groups in the epoxy resin composition for optical semiconductor encapsulation. preferable.
Moreover, when using tertiary amines, such as benzyldimethylamine, as a hardening | curing agent (C), the usage-amount is 0.3- with respect to the total amount of the epoxy resin contained in the epoxy resin composition for optical semiconductor sealing. About 20% by weight is preferable, and about 0.5 to 10% by weight is particularly preferable.
本発明の光半導体封止用エポキシ樹脂組成物に含有される硬化促進剤(D)としては、例えば、2−メチルイミダゾール、2−フェニルイミダゾール、2−ウンデシルイミダゾール、2−ヘプタデシルイミダゾール、2−フェニル−4−メチルイミダゾール、1−ベンジル−2−フェニルイミダゾール、1−ベンジル−2−メチルイミダゾール、1−シアノエチル−2−メチルイミダゾール、1−シアノエチル−2−フェニルイミダゾール、1−シアノエチル−2−ウンデシルイミダゾール、2,4−ジアミノ−6(2’−メチルイミダゾール(1’))エチル−s−トリアジン、2,4−ジアミノ−6(2’−ウンデシルイミダゾール(1’))エチル−s−トリアジン、2,4−ジアミノ−6(2’−エチル−4−メチルイミダゾール(1’))エチル−s−トリアジン、2,4−ジアミノ−6(2’−メチルイミダゾール(1’))エチル−s−トリアジン・イソシアヌル酸付加物、2−メチルイミダゾールイソシアヌル酸の2:3付加物、2−フェニルイミダゾールイソシアヌル酸付加物、2−フェニル−3,5−ジヒドロキシメチルイミダゾール、2−フェニル−4−ヒドロキシメチル−5−メチルイミダゾール、1−シアノエチル−2−フェニル−3,5−ジシアノエトキシメチルイミダゾールの各種イミダゾール類;それらイミダゾール類とフタル酸、イソフタル酸、テレフタル酸、トリメリット酸、ピロメリット酸、ナフタレンジカルボン酸、マレイン酸、蓚酸等の多価カルボン酸との塩類;ジシアンジアミド等のアミド類;1,8−ジアザビシクロ[5.4.0]ウンデセン−7等のジアザ化合物;それらのテトラフェニルホウ酸、フェノールノボラック等、前記多価カルボン酸類若しくはホスフィン酸類との塩類;臭化テトラブチルアンモニウム、臭化セチルトリメチルアンモニウム、臭化トリオクチルメチルアンモニウム等のアンモニウム塩;トリフェニルホスフィン、トリ(トルイル)ホスフィン、臭化テトラフェニルホスホニウム、テトラフェニルホスホニウムテトラフェニルボレート等のホスフィン類やホスホニウム化合物;2,4,6−トリスアミノメチルフェノール等のフェノール類;アミンアダクトが挙げられ、これらの化合物をマイクロカプセルにしたマイクロカプセル型硬化促進剤等も使用可能である。これらの硬化促進剤のどれを用いるかは、例えば、透明性、硬化速度、作業条件といった得られる透明光半導体封止用エポキシ樹脂組成物に要求される特性によって適宜選択される。
該硬化促進剤(D)は、光半導体封止用エポキシ樹脂固形分中、通常0.01〜15重量%程度の範囲で使用される。
Examples of the curing accelerator (D) contained in the epoxy resin composition for optical semiconductor encapsulation of the present invention include 2-methylimidazole, 2-phenylimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2 -Phenyl-4-methylimidazole, 1-benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2- Undecylimidazole, 2,4-diamino-6 (2′-methylimidazole (1 ′)) ethyl-s-triazine, 2,4-diamino-6 (2′-undecylimidazole (1 ′)) ethyl-s -Triazine, 2,4-diamino-6 (2'-ethyl-4-methylimidazole (1 ')) Til-s-triazine, 2,4-diamino-6 (2'-methylimidazole (1 ')) ethyl-s-triazine isocyanuric acid adduct, 2-methylimidazole isocyanuric acid 2: 3 adduct, 2- Of phenylimidazole isocyanuric acid adduct, 2-phenyl-3,5-dihydroxymethylimidazole, 2-phenyl-4-hydroxymethyl-5-methylimidazole, 1-cyanoethyl-2-phenyl-3,5-dicyanoethoxymethylimidazole Various imidazoles; salts of these imidazoles with polyvalent carboxylic acids such as phthalic acid, isophthalic acid, terephthalic acid, trimellitic acid, pyromellitic acid, naphthalenedicarboxylic acid, maleic acid and oxalic acid; amides such as dicyandiamide; 1 , 8-Diazabicyclo [5.4.0] undecene Diaza compounds such as -7; their tetraphenylboric acid, phenol novolac, etc., salts with the above-mentioned polycarboxylic acids or phosphinic acids; tetrabutylammonium bromide, cetyltrimethylammonium bromide, trioctylmethylammonium bromide, etc. Ammonium salts; phosphines and phosphonium compounds such as triphenylphosphine, tri (toluyl) phosphine, tetraphenylphosphonium bromide, tetraphenylphosphonium tetraphenylborate; phenols such as 2,4,6-trisaminomethylphenol; amine adducts It is also possible to use a microcapsule type curing accelerator in which these compounds are made into microcapsules. Which of these curing accelerators is used is appropriately selected depending on the characteristics required for the obtained epoxy resin composition for encapsulating a transparent optical semiconductor, such as transparency, curing speed, and working conditions.
The curing accelerator (D) is usually used in the range of about 0.01 to 15% by weight in the solid content of the epoxy resin for sealing an optical semiconductor.
本発明の光半導体封止用エポキシ樹脂組成物には、目的に応じ無機質充填剤、着色剤、カップリング剤、レベリング剤、滑剤等を適宜添加することができる。
無機質充填剤としては、例えば、結晶性あるいは非結晶性シリカ、タルク、窒化ケイ素、ボロンナイトライド、アルミナ、シリカ・チタニア混融体等が挙げられる。
An inorganic filler, a colorant, a coupling agent, a leveling agent, a lubricant and the like can be appropriately added to the epoxy resin composition for optical semiconductor encapsulation of the present invention depending on the purpose.
Examples of the inorganic filler include crystalline or amorphous silica, talc, silicon nitride, boron nitride, alumina, silica / titania mixed melt, and the like.
着色剤としては、例えば、フタロシアニン系、アゾ系、ジスアゾ系、キナクリドン系、アントラキノン系、フラバントロン系、ペリノン系、ペリレン系、ジオキサジン系、縮合アゾ系、アゾメチン系の各種有機系色素、酸化チタン、硫酸鉛、クロムエロー、ジンクエロー、クロムバーミリオン、弁殻、コバルト紫、紺青、群青、カーボンブラック、クロムグリーン、酸化クロム、コバルトグリーン等の無機顔料が挙げられる。 Examples of the colorant include phthalocyanine series, azo series, disazo series, quinacridone series, anthraquinone series, flavantron series, perinone series, perylene series, dioxazine series, condensed azo series, various azomethine series organic dyes, titanium oxide, Inorganic pigments such as lead sulfate, chrome yellow, zinc yellow, chrome vermilion, valve shell, cobalt violet, bitumen, ultramarine, carbon black, chrome green, chrome oxide, cobalt green and the like can be mentioned.
レベリング剤としては、例えば、エチルアクリレート、ブチルアクリレート、2−エチルヘキシルアクリレート等のアクリレート類からなるオリゴマー類、エポキシ化大豆脂肪酸、エポキシ化アビエチルアルコール、水添ひまし油、チタン系カップリング剤等が挙げられる。 Examples of the leveling agent include oligomers composed of acrylates such as ethyl acrylate, butyl acrylate, and 2-ethylhexyl acrylate, epoxidized soybean fatty acid, epoxidized abiethyl alcohol, hydrogenated castor oil, and titanium-based coupling agents. .
滑剤としては、例えば、パラフィンワックス、マイクロワックス、ポリエチレンワックス等の炭化水素系滑剤、ラウリン酸、ミリスチン酸、パルミチン酸、ステアリン酸、アラキジン酸、ベヘン酸等の高級脂肪酸系滑剤、ステアリルアミド、パルミチルアミド、オレイルアミド、メチレンビスステアロアミド、エチレンビスステアロアミド等の高級脂肪酸アミド系滑剤、硬化ひまし油、ブチルステアレート、エチレングリコールモノステアレート、ペンタエリスリトール(モノ−,ジ−,トリ−,又はテトラ−)ステアレート等の高級脂肪酸エステル系滑剤、セチルアルコール、ステアリルアルコール、ポリエチレングリコール、ポリグリセロール等のアルコール系滑剤、ラウリン酸、ミリスチン酸、パルミチン酸、ステアリン酸、アラキジン酸、ベヘン酸、リシノール酸、ナフテン酸等のマグネシウム、カルシウム、カドミウム、バリウム、亜鉛、鉛等の金属塩である金属石鹸類、カルナウバロウ、カンデリラロウ、密ロウ、モンタンロウ等の天然ワックス類が挙げられる。 Examples of the lubricant include hydrocarbon lubricants such as paraffin wax, microwax and polyethylene wax, higher fatty acid lubricants such as lauric acid, myristic acid, palmitic acid, stearic acid, arachidic acid, and behenic acid, stearylamide, palmityl Higher fatty acid amide type lubricants such as amide, oleylamide, methylene bisstearamide, ethylene bisstearamide, hydrogenated castor oil, butyl stearate, ethylene glycol monostearate, pentaerythritol (mono-, di-, tri-, or Higher fatty acid ester lubricants such as tetra-) stearate, alcohol lubricants such as cetyl alcohol, stearyl alcohol, polyethylene glycol, polyglycerol, lauric acid, myristic acid, palmitic acid, stearic acid, arachizi Acid, behenic acid, ricinoleic acid, such as magnesium naphthenate, calcium, cadmium, barium, zinc, metallic soaps are metal salts such as lead, carnauba wax, candelilla wax, beeswax, and natural waxes such as montan wax.
カップリング剤としては、例えば、3−グリシドキシプロピルトリメトキシシラン、3−グリシドキシプロピルメチルジメトキシシラン、3−グリシドキシプロピルメチルジメトキシシラン、2−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン、N−(2−アミノエチル)3−アミノプロピルメチルジメトキシシラン、N−(2−アミノエチル)3−アミノプロピルメチルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、3−メルカプトプロピルトリメトキシシラン、ビニルトリメトキシシラン、N−(2−(ビニルベンジルアミノ)エチル)3−アミノプロピルトリメトキシシラン塩酸塩、3−メタクリロキシプロピルトリメトキシシラン、3−クロロプロピルメチルジメトキシシラン、3−クロロプロピルトリメトキシシラン等のシラン系カップリング剤、イソプロピル(N−エチルアミノエチルアミノ)チタネート、イソプロピルトリイソステアロイルチタネート、チタニウムジ(ジオクチルピロホスフェート)オキシアセテート、テトライソプロピルジ(ジオクチルホスファイト)チタネート、ネオアルコキシトリ(p−N−(β−アミノエチル)アミノフェニル)チタネート等のチタン系カップリング剤、Zr−アセチルアセトネート、Zr−メタクリレート、Zr−プロピオネート、ネオアルコキシジルコネート、ネオアルコキシトリスネオデカノイルジルコネート、ネオアルコキシトリス(ドデカノイル)ベンゼンスルホニルジルコネート、ネオアルコキシトリス(エチレンジアミノエチル)ジルコネート、ネオアルコキシトリス(m−アミノフェニル)ジルコネート、アンモニウムジルコニウムカーボネート、Al−アセチルアセトネート、Al−メタクリレート、Al−プロピオネート等のジルコニウム或いはアルミニウム系カップリング剤が挙げられる。 Examples of the coupling agent include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltri Methoxysilane, N- (2-aminoethyl) 3-aminopropylmethyldimethoxysilane, N- (2-aminoethyl) 3-aminopropylmethyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-mercaptopropyltrimethoxy Silane, vinyltrimethoxysilane, N- (2- (vinylbenzylamino) ethyl) 3-aminopropyltrimethoxysilane hydrochloride, 3-methacryloxypropyltrimethoxysilane, 3-chloropropylmethyldimethoxysilane, 3-chloropropi Silane coupling agents such as trimethoxysilane, isopropyl (N-ethylaminoethylamino) titanate, isopropyl triisostearoyl titanate, titanium di (dioctyl pyrophosphate) oxyacetate, tetraisopropyl di (dioctyl phosphite) titanate, neoalkoxy Titanium coupling agents such as tri (p-N- (β-aminoethyl) aminophenyl) titanate, Zr-acetylacetonate, Zr-methacrylate, Zr-propionate, neoalkoxyzirconate, neoalkoxytrisneodecanoylzirco , Neoalkoxytris (dodecanoyl) benzenesulfonyl zirconate, neoalkoxytris (ethylenediaminoethyl) zirconate, neoalkoxytris (m -Aminophenyl) zirconate, ammonium zirconium carbonate, Al-acetylacetonate, Al-methacrylate, Al-propionate and other zirconium or aluminum coupling agents.
本発明の光半導体封止用エポキシ樹脂組成物は、エポキシ樹脂(A)、エポキシ樹脂(B)、硬化剤(C)及び硬化促進剤(D)、必要によりエポキシ樹脂(E)、並びに任意成分としての無機質充填剤、カップリング剤、着色剤及びレベリング剤等の配合成分を、配合成分が固形の場合はヘンシェルミキサー、ナウターミキサー等の配合機を用いて混合後、ニーダー、エクストルーダー、加熱ロールを用いて80〜120℃で混練し、冷却後に粉砕して粉末状として得ることができる。一方、配合成分が液状の場合はプラネタリーミキサー等を用いて均一に分散して本発明の光半導体封止用エポキシ樹脂組成物とする。 The epoxy resin composition for optical semiconductor encapsulation of the present invention comprises an epoxy resin (A), an epoxy resin (B), a curing agent (C) and a curing accelerator (D), an epoxy resin (E) as necessary, and an optional component. Ingredients such as inorganic filler, coupling agent, colorant and leveling agent are mixed using a blender such as Henschel mixer and Nauter mixer if the compounding ingredients are solid, then kneader, extruder, heating It can knead | mix at 80-120 degreeC using a roll, can grind | pulverize after cooling, and can be obtained as a powder form. On the other hand, when the compounding component is liquid, it is uniformly dispersed using a planetary mixer or the like to obtain the epoxy resin composition for optical semiconductor encapsulation of the present invention.
LD、フォトセンサー、トランシーバー等に用いるためのこうして得られた光半導体封止用エポキシ樹脂組成物により封止して得られる光半導体装置も本発明に含まれる、該光半導体装置を得るには、トランスファーモールド、コンプレッションモールド、インジェクションモールド、印刷法等の従来の成型方法で成形すればよい。 In order to obtain the optical semiconductor device included in the present invention, the optical semiconductor device obtained by sealing with the epoxy resin composition for optical semiconductor sealing thus obtained for use in LDs, photosensors, transceivers, etc. What is necessary is just to shape | mold by the conventional shaping | molding methods, such as a transfer mold, a compression mold, an injection mold, and a printing method.
以下、本発明を実施例により更に詳細に説明する。尚、本発明はこれら実施例に限定されるものではない。又、実施例中特に断りがない限り、部は重量部を示す。
実施例中の各物性値は以下の方法で測定した。
(1)重量平均分子量:ゲルパーミエーションクロマトグラフィー(GPC)法により測定。
(2)エポキシ当量:JIS K−7236に記載の方法で測定。
(3)核水素化率:分光光度計で測定。分光光度計:UV−2500PC(島津製作所製)
(4)粘度:E型粘度計:VISCONIC EHD(東京計器製)で測定。
Hereinafter, the present invention will be described in more detail with reference to examples. The present invention is not limited to these examples. Moreover, unless otherwise indicated in an Example, a part shows a weight part.
Each physical property value in the examples was measured by the following method.
(1) Weight average molecular weight: Measured by gel permeation chromatography (GPC) method.
(2) Epoxy equivalent: measured by the method described in JIS K-7236.
(3) Nuclear hydrogenation rate: measured with a spectrophotometer. Spectrophotometer: UV-2500PC (manufactured by Shimadzu Corporation)
(4) Viscosity: E-type viscometer: Measured with VISCONIC EHD (manufactured by Tokyo Keiki).
合成例1
γ−グリシドキシプロピルトリメトキシシラン94.4部、メチルイソブチルケトン94.4部を反応容器に仕込み、80℃に昇温した。昇温後、0.1重量%水酸化カリウム水溶液10.8部を30分間かけて連続的に滴下した。滴下終了後、還流下80℃にて5時間反応させた。反応終了後、洗浄液が中性になるまで水洗を繰り返した。次いで減圧下で溶媒を除去することによりエポキシ樹脂(A−1)66部を得た。得られたエポキシ樹脂のエポキシ当量は171g/eq、重量平均分子量は2200であった。
Synthesis example 1
A reaction vessel was charged with 94.4 parts of γ-glycidoxypropyltrimethoxysilane and 94.4 parts of methyl isobutyl ketone, and the temperature was raised to 80 ° C. After the temperature increase, 10.8 parts of a 0.1 wt% aqueous potassium hydroxide solution was continuously added dropwise over 30 minutes. After completion of the dropwise addition, the mixture was reacted at 80 ° C. under reflux for 5 hours. After completion of the reaction, washing with water was repeated until the washing solution became neutral. Subsequently, 66 parts of epoxy resins (A-1) were obtained by removing a solvent under reduced pressure. The epoxy equivalent of the obtained epoxy resin was 171 g / eq, and the weight average molecular weight was 2200.
合成例2
β−(3,4−エポキシシクロヘキシル)エチルトリメトキシシラン100部、メチルイソブチルケトン100部を反応容器に仕込み、80℃に昇温した。昇温後、0.1重量%水酸化カリウム水溶液11部を30分間かけて連続的に滴下した。滴下終了後、還流下80℃にて5時間反応させた。反応終了後、洗浄液が中性になるまで水洗を繰り返した。次いで減圧下で溶媒を除去することによりエポキシ樹脂(A−2)69部を得た。得られた化合物のエポキシ当量は184g/eq、重量平均分子量は2500であった。
Synthesis example 2
100 parts of β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane and 100 parts of methyl isobutyl ketone were charged into a reaction vessel and heated to 80 ° C. After the temperature rise, 11 parts of a 0.1 wt% aqueous potassium hydroxide solution was continuously added dropwise over 30 minutes. After completion of the dropwise addition, the mixture was reacted at 80 ° C. under reflux for 5 hours. After completion of the reaction, washing with water was repeated until the washing solution became neutral. Subsequently, 69 parts of epoxy resins (A-2) were obtained by removing a solvent under reduced pressure. The epoxy equivalent of the obtained compound was 184 g / eq, and the weight average molecular weight was 2500.
合成例3
γ−グリシドキシプロピルトリメトキシシラン47.3部、ジメチルジメトキシシラン24部、メチルイソブチルケトン285.2部を反応容器に仕込み、80℃に昇温した。昇温後、0.1重量%水酸化カリウム水溶液10.8部を30分間かけて連続的に滴下した。滴下終了後、還流下80℃にて5時間反応させた。反応終了後、洗浄液が中性になるまで水洗を繰り返した。次いで減圧下で溶媒を除去することによりエポキシ樹脂(A−3)46部を得た。得られた化合物のエポキシ当量は240g/eq、重量平均分子量は1400、粘度は370mPa・sであった。
Synthesis example 3
A reaction vessel was charged with 47.3 parts of γ-glycidoxypropyltrimethoxysilane, 24 parts of dimethyldimethoxysilane, and 285.2 parts of methyl isobutyl ketone, and the temperature was raised to 80 ° C. After the temperature increase, 10.8 parts of a 0.1 wt% aqueous potassium hydroxide solution was continuously added dropwise over 30 minutes. After completion of the dropwise addition, the mixture was reacted at 80 ° C. under reflux for 5 hours. After completion of the reaction, washing with water was repeated until the washing solution became neutral. Subsequently, 46 parts of epoxy resins (A-3) were obtained by removing a solvent under reduced pressure. The obtained compound had an epoxy equivalent of 240 g / eq, a weight average molecular weight of 1400, and a viscosity of 370 mPa · s.
合成例4
オートクレーブに、フェノール・ビフェニルノボラック型のエポキシ樹脂(商品名;NC−3000、日本化薬社製;エポキシ当量276g/eq)50部、テトラヒドロフラン50部、ルテニウム/カーボン触媒6部(エヌイーケムキャット社製;ルテニウム担持量5重量%、含水品)を仕込み、オートクレーブ内を窒素置換した後、水素ガスで置換した。その後、内容物を攪拌しながら水素圧8MPa、反応温度110℃で12時間反応させた。反応終了後、反応液にテトラヒドロフラン50部を加えた後、ろ紙を用いて吸引ろ過し、ろ液を更にロータリーエバポレーターにより減圧乾燥し、不揮発分として透明なエポキシ樹脂(B−1)を得た。得られたエポキシ樹脂のエポキシ当量は388g/eqであった。又、核水素化率は89%であった。
Synthesis example 4
In an autoclave, phenol / biphenyl novolac type epoxy resin (trade name: NC-3000, manufactured by Nippon Kayaku Co., Ltd .; epoxy equivalent 276 g / eq) 50 parts, tetrahydrofuran 50 parts, ruthenium / carbon catalyst 6 parts (manufactured by N Chemcat Corporation) A ruthenium carrying amount of 5% by weight, a water-containing product) was charged, and the inside of the autoclave was purged with nitrogen and then purged with hydrogen gas. Thereafter, the contents were reacted at a hydrogen pressure of 8 MPa and a reaction temperature of 110 ° C. for 12 hours while stirring. After completion of the reaction, 50 parts of tetrahydrofuran was added to the reaction solution, followed by suction filtration using filter paper, and the filtrate was further dried under reduced pressure by a rotary evaporator to obtain a transparent epoxy resin (B-1) as a nonvolatile content. The epoxy equivalent of the obtained epoxy resin was 388 g / eq. The nuclear hydrogenation rate was 89%.
実施例1〜3、比較例1
上記エポキシ樹脂と下記に示す原料を表1の「配合物の組成」に示す重量割合で混合し、エポキシ樹脂組成物を得た。
硬化剤:4−メチルヘキサヒドロフタル酸無水物(新日本理化社製「MH−700G」)
硬化促進剤:第4級ホスホニウムブロマイド(サンアプロ社製「U−CAT 5003」)
Examples 1-3, Comparative Example 1
The said epoxy resin and the raw material shown below were mixed by the weight ratio shown to the "composition of a compound" of Table 1, and the epoxy resin composition was obtained.
Curing agent: 4-methylhexahydrophthalic anhydride (“MH-700G” manufactured by Shin Nippon Rika Co., Ltd.)
Curing accelerator: Quaternary phosphonium bromide ("U-CAT 5003" manufactured by Sun Apro)
表1 配合物の組成
実施例1 実施例2 実施例3 比較例1
エポキシ樹脂A−1 50 100
エポキシ樹脂A−2 50
エポキシ樹脂A−3 50
エポキシ樹脂B−1 50 50 50
硬化剤 69 65 55 95
硬化促進剤 3 3 3 3
Table 1 Composition of the formulation
Example 1 Example 2 Example 3 Comparative Example 1
Epoxy resin A-1 50 100
Epoxy resin A-2 50
Epoxy resin A-3 50
Epoxy resin B-1 50 50 50
Curing agent 69 65 55 95
Curing accelerator 3 3 3 3
試験例1 透過性試験
実施例1〜3及び比較例1で得られたエポキシ樹脂組成物につき、下記に示す透過性試験を行い、その結果を表2に示した。
透過性試験:得られたエポキシ樹脂組成物を注型(120℃×2時間の硬化条件)により、厚み1mm、20mm×15mmの試験片を得た。これらの試験片を用い、7時間の紫外線照射前後における透過率(測定波長:400nm)を分光光度計により測定した。
紫外線照射条件は以下の通りである。
紫外線照射機:アイ スーパー UVテスター SUV−W11
温度:60℃
照射エネルギー:65mW/cm2
照射時間:7時間
Test Example 1 Permeability Test For the epoxy resin compositions obtained in Examples 1 to 3 and Comparative Example 1, the permeability test shown below was performed, and the results are shown in Table 2.
Permeability test: A test piece having a thickness of 1 mm and 20 mm × 15 mm was obtained by casting the obtained epoxy resin composition (curing conditions at 120 ° C. × 2 hours). Using these test pieces, the transmittance (measurement wavelength: 400 nm) before and after ultraviolet irradiation for 7 hours was measured with a spectrophotometer.
The ultraviolet irradiation conditions are as follows.
Ultraviolet irradiation machine: Eye super UV tester SUV-W11
Temperature: 60 ° C
Irradiation energy: 65 mW / cm 2
Irradiation time: 7 hours
表2
紫外線照射前の透過率(%) 紫外線照射(7時間)後の透過率(%)
実施例1 91 86
実施例2 92 86
実施例3 92 87
比較例1 91 88
Table 2
Transmittance before UV irradiation (%) Transmittance after UV irradiation (7 hours) (%)
Example 1 91 86
Example 2 92 86
Example 3 92 87
Comparative Example 1 91 88
試験例2 吸水率
上記で得られたエポキシ樹脂組成物を用いて注型(硬化条件:120℃×2時間)により、樹脂成形体を調製した。このようにして得られた硬化物の吸水率を測定した結果を表3に示す。尚、測定は以下の方法で行った。
吸水率:直径5cm×厚み4mmの円盤状の試験片を100℃の水中で24時間煮沸した後の重量増加率(%)
Test Example 2 Water Absorption Rate A resin molded body was prepared by casting (curing conditions: 120 ° C. × 2 hours) using the epoxy resin composition obtained above. The results of measuring the water absorption rate of the cured product thus obtained are shown in Table 3. The measurement was performed by the following method.
Water absorption: weight increase rate (%) after boiling a disk-shaped test piece having a diameter of 5 cm and a thickness of 4 mm in water at 100 ° C. for 24 hours
表3
実施例1 実施例2 実施例3 比較例1
吸水率(%) 1.8 2.1 2.0 3.0
Table 3
Example 1 Example 2 Example 3 Comparative Example 1
Water absorption rate (%) 1.8 2.1 2.0 3.0
表2及び表3の結果より、本発明の光半導体封止用エポキシ樹脂組成物は、紫外光に対する劣化が少なく且つ耐湿性に優れる硬化物を与えることが示された。
From the results of Tables 2 and 3, it was shown that the epoxy resin composition for encapsulating an optical semiconductor of the present invention gives a cured product with little deterioration against ultraviolet light and excellent in moisture resistance.
Claims (3)
[化1]
XSi(R1)a(OR2)3−a (1)
(式中、Xはエポキシ基を含む置換基、R1は炭素数1〜14の置換若しくは非置換のアルキル基、炭素数6〜14のアリール基又は炭素数3〜5のアルケニルカルボキシ基を示し、R2は炭素数1〜4のアルキル基を示し、aは0〜2の整数を示し、R1が複数ある場合、複数のR1は互いに同一であっても異なっていてもよい。)
[化2]
Xk(R3)bSi(OR4)4−(k+b) (2)
(式中、Xはエポキシ基を含む置換基、R3は炭素数1〜14の置換若しくは非置換のアルキル基又は炭素数6〜14のアリール基を示し、R4は炭素数1〜4のアルキル基を示し、k及びbは0〜3の整数であり、k+bは0〜3であり、R3が複数ある場合、複数のR3は互いに同一であっても異なっていてもよい。);
一般式(3)で表されるエポキシ樹脂の芳香環を核水素化して得られる水素化エポキシ樹脂(B)、
硬化剤(C)及び硬化促進剤(D)を含有する光半導体封止用エポキシ樹脂組成物。 Co-hydrolyzing and condensing the alkoxysilicon compounds represented by the general formula (1) or the alkoxysilicon compound represented by the general formula (1) and the alkoxysilicon compound represented by the general formula (2). Epoxy resin (A) obtained by
[Chemical 1]
XSi (R 1 ) a (OR 2 ) 3-a (1)
(In the formula, X represents a substituent containing an epoxy group, R 1 represents a substituted or unsubstituted alkyl group having 1 to 14 carbon atoms, an aryl group having 6 to 14 carbon atoms, or an alkenylcarboxy group having 3 to 5 carbon atoms. , R 2 represents an alkyl group having 1 to 4 carbon atoms, a is an integer of 0 to 2, when R 1 is a plurality, the plurality of R 1 may be the being the same or different.)
[Chemical 2]
X k (R 3) b Si (OR 4) 4- (k + b) (2)
(In the formula, X represents a substituent containing an epoxy group, R 3 represents a substituted or unsubstituted alkyl group having 1 to 14 carbon atoms or an aryl group having 6 to 14 carbon atoms, and R 4 represents a group having 1 to 4 carbon atoms. an alkyl group, k and b are integer from 0 to 3, k + b is 0 to 3, when there are a plurality of R 3, a plurality of R 3 may be be the same or different from each other.) ;
A hydrogenated epoxy resin (B) obtained by nuclear hydrogenation of the aromatic ring of the epoxy resin represented by the general formula (3),
An epoxy resin composition for optical semiconductor encapsulation containing a curing agent (C) and a curing accelerator (D).
An optical semiconductor device sealed with a cured product of the epoxy resin composition according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005261576A JP2007070554A (en) | 2005-09-09 | 2005-09-09 | Epoxy resin composition for encapsulation of optical semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005261576A JP2007070554A (en) | 2005-09-09 | 2005-09-09 | Epoxy resin composition for encapsulation of optical semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2007070554A true JP2007070554A (en) | 2007-03-22 |
Family
ID=37932295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005261576A Pending JP2007070554A (en) | 2005-09-09 | 2005-09-09 | Epoxy resin composition for encapsulation of optical semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007070554A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008019422A (en) * | 2006-06-16 | 2008-01-31 | Shin Etsu Chem Co Ltd | Epoxy / silicone hybrid resin composition and light emitting semiconductor device |
| JP2009013335A (en) * | 2007-07-06 | 2009-01-22 | Showa Highpolymer Co Ltd | Modified organopolysiloxane, process for producing the same, composition containing the same, and composition for encapsulating light emitting diode |
| JP2012136614A (en) * | 2010-12-27 | 2012-07-19 | Three Bond Co Ltd | Gas-barrier photosetting resin composition |
| JP2013089578A (en) * | 2011-10-24 | 2013-05-13 | Three Bond Co Ltd | Sealant composition for photoelectric conversion element |
| KR101390087B1 (en) | 2006-06-16 | 2014-04-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Epoxy-silicone hybrid resin compositions and light-emitting semiconductor devices |
-
2005
- 2005-09-09 JP JP2005261576A patent/JP2007070554A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008019422A (en) * | 2006-06-16 | 2008-01-31 | Shin Etsu Chem Co Ltd | Epoxy / silicone hybrid resin composition and light emitting semiconductor device |
| KR101390087B1 (en) | 2006-06-16 | 2014-04-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Epoxy-silicone hybrid resin compositions and light-emitting semiconductor devices |
| JP2009013335A (en) * | 2007-07-06 | 2009-01-22 | Showa Highpolymer Co Ltd | Modified organopolysiloxane, process for producing the same, composition containing the same, and composition for encapsulating light emitting diode |
| JP2012136614A (en) * | 2010-12-27 | 2012-07-19 | Three Bond Co Ltd | Gas-barrier photosetting resin composition |
| JP2013089578A (en) * | 2011-10-24 | 2013-05-13 | Three Bond Co Ltd | Sealant composition for photoelectric conversion element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5684364B2 (en) | Siloxane compound and curable resin composition | |
| TWI625357B (en) | Curable resin composition and cured product thereof | |
| TW200948846A (en) | Epoxy-silicon mixed resin composition for sealing of light semiconductor element and transfer molding plate formed thereof | |
| JP4088697B2 (en) | Modified polysiloxane and curable resin composition using the same | |
| CN101031602B (en) | Epoxy resin composition for sealing optical semiconductor | |
| JP6004581B2 (en) | Epoxy group-containing silicone resin, epoxy group-containing silicone resin composition, and cured product thereof | |
| JP2006104249A (en) | Epoxy resin composition for sealing optical semiconductor | |
| JP2007070554A (en) | Epoxy resin composition for encapsulation of optical semiconductor | |
| JP2007070560A (en) | Epoxy resin composition for encapsulation of optical semiconductor | |
| TWI454497B (en) | Optical semiconductor encapsulating epoxy resin composition | |
| JP4623499B2 (en) | Hydrogenated epoxy resin | |
| JP6521448B2 (en) | Epoxy resin having bisphenol fluorene skeleton | |
| JP5160487B2 (en) | Optical lens | |
| JP4841529B2 (en) | Modified polysiloxane | |
| JP4434363B2 (en) | Epoxy resin composition for optical semiconductor encapsulation | |
| JP5328442B2 (en) | Insulating resin composition, semiconductor device using the same, and method for producing insulating resin composition | |
| JP4861783B2 (en) | Method for producing epoxy group-containing organopolysiloxane | |
| JP2001019653A (en) | Allylphenol-based compound, curing agent for epoxy resin and hardenable epoxy resin composition | |
| JP5248359B2 (en) | Method for producing resin composition | |
| JP2004315683A (en) | Optically transparent epoxy resin composition | |
| JP2001031742A (en) | Epoxy resin composition for sealing optical semiconductor |