JP2006339515A - Electronic component equipment and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide miniturized electronic component equipment in which a top surface side of an element region with a device element formed therein is necessary to be formed in a hollow construction. <P>SOLUTION: The present electronic component equipment 1 comprises a substrate 4 in which an FBAR element 2 of an electronic device element is formed, and an electrode pad 3 electrically connected to this FBAR element 2 is formed; a dam 5 formed on the top surface of the substrate 4 so that the FBAR element 2 may surround an element region formed on a substrate surface; and a sheet-like resin 6 arranged on a top surface of the dam 5, so that the hollow construction may be formed in the substrate surface for covering the element region. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to an electronic component device that requires a hollow structure on the upper surface side of an element region in which a device element is formed, and a method for manufacturing the electronic component device.

  In recent years, electronic devices such as filters and oscillators are often used for electronic devices such as portable devices using radio waves, and miniaturization and high reliability of the electronic devices themselves are required. Accordingly, electronic component devices used in these electronic devices are similarly required to be downsized and highly reliable. One example of such a filter is an FBAR (Film Bulk Acoustic Resonator (piezoelectric thin film resonator)) element. This FBAR element has a structure in which a thin piezoelectric film is sandwiched between electrodes on a silicon substrate, and resonates by generating a bulk wave in the thin piezoelectric film by applying an electric signal between the electrodes. is there.

  As a conventional technique for sealing the FBAR element, an insulating film is formed on the upper surface, and a first silicon substrate having a concave portion on which the FBAR element is placed at the center of the upper surface, and wiring for electrode terminals of the FBAR element There is one in which a second silicon substrate on which a contact hole is formed is attached and sealed. (For example, refer to Patent Document 1).

However, in the above conventional technique, the second silicon substrate for sealing is required to have a predetermined strength and needs to have a predetermined film thickness (for example, about 200 μm). As a result, when the FBAR element is mounted on the first silicon substrate and further sealed, the second silicon substrate is attached, predetermined wiring is applied, and resin molding is performed. Becomes thick (about 1 mm or more), and there has been a problem that the package cannot be sufficiently downsized.
JP-A-8-139339 (page 3-6, FIG. 1)

  The present invention provides an electronic component device capable of downsizing a package.

  An electronic component device according to an embodiment of one aspect of the present invention includes an electronic device element formed on an upper surface, a substrate on which an electrode pad connected to the electronic device element is formed, and the electronic device element. A dam portion formed on the upper surface of the substrate so as to surround an element region on the surface of the substrate, and a dam portion disposed on the upper surface of the dam portion so as to cover the element region, so as to form a hollow structure on the element region A sheet-like resin.

  According to another aspect of the present invention, there is provided a method of manufacturing an electronic component device comprising: forming an electronic device element on a substrate; forming the electronic device element; and applying a photosensitive resin on the substrate. The dam part is formed by patterning by exposing and developing so as to surround the element region where the electronic device element is formed on the substrate, and the dam part is cured, and a photosensitive surface is formed on the upper surface of the dam part. A sheet-like resin is attached, and the sheet-like resin is patterned by exposing and developing so that at least the element region is covered, the patterned sheet-like resin is cured, and the electron is formed on the substrate After wiring the electrode pad electrically connected to the device element and the mounting substrate for mounting the substrate, the mounting surface of the mounting substrate is sealed.

  According to the present invention, an electronic component device capable of downsizing a package is provided.

  Hereinafter, as an example, the case where the present invention is applied to an FBAR (Film Bulk Acoustic Resonator) element will be described. The present invention can be similarly applied to (Solid Mounted Resonator) elements and MEMS (Micro Electro Mechanical Systems) such as CCDs (Charge Coupled Devices).

  In the present embodiment, for example, the hollow structure on the element region (functional surface) of the FBAR element formed on the substrate surface of the electronic component device is formed of a resin that can be patterned by photolithography technology. It is possible to reduce the size. Hereinafter, an electronic component device according to Embodiment 1 of the present invention will be described with reference to the drawings.

  FIG. 1 is a perspective view showing an external appearance of a main configuration of an electronic component device according to an embodiment of the present invention. FIG. 2 is a perspective view showing an external appearance of a main part configuration of the electronic component device in which the sheet resin is omitted for explanation. FIG. 3 is a cross-sectional view showing a cross section of the electronic component device along line AA in FIG.

  As shown in FIGS. 1 to 3, an electronic component device 1 according to an embodiment of the present invention has an FBAR element 2 that is an electronic device element, and is electrically connected to the FBAR element 2 by a wiring 3a. The semiconductor silicon substrate 4 on which the electrode pads 3 are formed, the dam portion 5 formed on the upper surface of the substrate 4 so as to surround the element region on the substrate surface on which the FBAR element 2 is formed, and the element region are covered. And a sheet-like resin 6 disposed on the upper surface of the dam portion 5 for forming a hollow structure on the element region.

  The FBAR element 2 includes, for example, a piezoelectric film made of AlN, ZnO or the like (not shown), an upper electrode mainly composed of aluminum, for example, disposed on the upper surface of the piezoelectric film, and a lower surface of the piezoelectric film. And a lower electrode disposed on the substrate. The FBAR element 2 has a thickness of about 1 μm. By connecting a plurality of the FBAR elements 2 on the substrate, desired performance as a filter, an oscillator, or the like can be obtained. Further, as shown in FIG. 3, a cavity 7 for freely vibrating the piezoelectric film is formed in the substrate 4 on the lower surface side of each FBAR element 2.

  The electrode pad 3 is connected to, for example, a mounting substrate (not shown) to be mounted on a portable device or the like by a bonding wire, and a predetermined electrical signal is input / output.

  The frame-shaped dam portion 5 has a thickness of about 5 μm, for example, in order to obtain a required height inside the hollow structure in consideration of the thickness of the FBAR element 2, oscillation, and the like. The dam portion 5 has a width of, for example, about 100 μm in order to obtain sufficient adhesion with the sheet-like resin 6 disposed on the upper surface. The dam portion 5 having this thickness and width is disposed adjacent to the FBAR element 2 so as to surround the element region, thereby removing, for example, noise caused by a reflected wave of the FBAR element 2 and external vibration. That is, the sound absorbing effect is produced. For the material of the dam portion 5, for example, a photosensitive resin such as a photosensitive polyimide resin is selected so that it can be formed by patterning using a photolithography technique in a semiconductor manufacturing process. Further, the dam portion 5 further includes a thermosetting resin such as an epoxy resin so that it can be appropriately cured after patterning by the photolithography technique.

  The sheet-like resin 6 has, for example, a thickness of about 50 μm so that sufficient strength can be obtained even for a resin mold or the like in a subsequent process. The sheet-like resin 6 has such a size that the element region is covered at least in a state where it is attached to the upper surface of the frame-like dam portion 5. As the material of the sheet-like resin 6, for example, a resin having photosensitivity such as a photosensitive polyimide resin is selected so that it can be formed by patterning using a photolithography technique in a semiconductor manufacturing process, like the dam portion 5. Thereby, even if it is a case where an element area | region has a fine shape, the sheet-like resin 6 can be patterned appropriately and each element area | region can be covered. Further, like the dam portion 5, the sheet-like resin 6 includes, for example, an epoxy resin that is a thermosetting resin so that it can be appropriately cured after patterning by a photolithography technique.

  Here, in the electronic component device 1, the height of the hollow structure including the dam portion 5 and the sheet-like resin 6 is about 55 μm (for example, the height of the dam portion 5 is about 5 μm, and the thickness of the sheet-like resin 6 is about 50 μm. Therefore, the thickness is reduced as compared with a conventional hollow structure using a silicon substrate (for example, the film thickness of the silicon substrate is required to be approximately 200 μm). Therefore, the electronic component device 1 can be downsized (thinned).

  The substrate 4 is placed on a mounting substrate (not shown), and the electrode pad 3 and the mounting substrate are wired with bonding wires and resin-molded as described above to constitute the electronic component device 1. The electronic component apparatus 1 can be reduced in size (thinned) by being mounted on a portable device (not shown).

  A method for manufacturing the electronic component device 1 having the above-described configuration will be described with reference to FIGS. 4A to 4E and 5A to 5C. FIG. 4 is a cross-sectional view illustrating a cross section of the electronic component device in each manufacturing process of the electronic component device according to the present embodiment. FIG. 5 is a cross-sectional view showing a cross section of the electronic component device in each mounting process of the electronic component device according to the present embodiment.

  First, the FBAR element 2 which is an electronic device element is formed on the upper surface of the substrate 4 which is a semiconductor wafer (FIG. 4A). The cavity 7 is formed by anisotropic etching, deep reactive anisotropic etching (Deep-RIE), or the like for realizing deep trenching of Si.

  Here, FIG. 4A shows only one chip corresponding to one electronic component device 1, and a plurality of chips are arranged on one surface of the semiconductor wafer substrate. In addition, hereinafter, until the process shown in FIG. 4E, a process for forming a hollow structure on the element region is performed in a state where each chip is mounted on the semiconductor wafer.

  Next, a photosensitive resin 8 to be the dam portion 5 is applied by spin coating on the surface of the substrate on which a plurality of FBAR elements 2 as electronic device elements are formed (FIG. 4B).

  Next, a frame-shaped dam portion 5 is formed by a photolithography technique so as to surround the element region where the FBAR element 2 is formed (FIG. 4C). When a negative photosensitive resin such as a polyimide resin is used as the material of the dam part 5, for example, the part to be the dam part 5 is exposed, developed, and patterned. After this patterning, the dam portion is cured by heat treatment in order to obtain a predetermined strength.

  Next, a photosensitive sheet-like resin 9 for covering the element region is attached to the upper surface of the dam portion 5 which is a frame body in the atmosphere (FIG. 4D). The sheet-like resin 9 has a thickness of about 50 μm, for example.

  Next, the sheet-like resin 9 is patterned to the same size as the dam portion 5 of the frame body so that each frame-like dam portion 5 surrounding the element region is covered (FIG. 4E). . That is, exposure and development are performed and patterning is performed so that at least the element region is covered by a photolithography technique. After this patterning, the sheet-like resin 6 is cured by performing a heat treatment in order to obtain a predetermined strength.

  Next, the substrate 4 which is in a wafer state is diced by a dicing apparatus (not shown), and is singulated for each element region of the FBAR element 2 in which the hollow structure is formed.

  And the board | substrate 4 (chip | chip) obtained by individualizing for every element area | region in the above manufacturing process is mounted in the mounting board | substrate 10 for mounting a board | substrate, and it adhere | attaches using the die-bonding resin 11 (FIG. 5 ( A)). The mounting substrate 10 is formed on the upper surface side of the mounting substrate 10, and is electrically connected to the electrode pad 12 for wiring with the substrate 4 by the electrode pad 12 and the internal wiring 13 and at the lower surface side of the mounting substrate 10. And an electrode pad 14 for wiring with a portable device (not shown). A plurality of the above-described individual substrates 4 (chips) are mounted on the mounting substrate 10.

  Next, the electrode pad 3 of the substrate 4 (chip) and the electrode pad 12 of the mounting substrate 10 are connected by the bonding wire 15 using a wire bonding apparatus (not shown) (FIG. 5B).

  After wiring with the bonding wires 15, the mounting surface of the mounting substrate 10 on which the substrate 4 is mounted is sealed with the mold resin 16 (FIG. 5C). Thereafter, one electronic component device 1 is obtained by dividing the mounting substrate 10 into pieces using a dicing device (not shown).

  As described above, according to the electronic component device according to the present embodiment, the dam part surrounding the element region of the FBAR element formed by the photolithography technique and the sheet-like resin disposed on the upper surface of the dam part. Since the constructed low-profile hollow structure is provided, it is possible to reduce the size of an electronic component device that requires a hollow structure on the upper surface of the element region.

  In the first embodiment, the configuration in which the hollow structure is formed on the element region by the dam portion surrounding the element region of the FBAR element on the substrate and the sheet-like resin disposed on the upper surface of the dam portion has been described. In the present embodiment, a configuration for preventing the sheet-like resin constituting the hollow structure from being bent will be described.

  FIG. 6 is a perspective view showing an external appearance of a main part configuration of the electronic component device according to the embodiment of the present invention. FIG. 7 is a perspective view showing an external appearance of a main part configuration of the electronic component device in which the sheet resin is omitted for explanation. FIG. 8 is a cross-sectional view showing a cross section of the electronic component device along the line BB in FIG.

  As shown in FIGS. 6 to 8, the electronic component device 1 a according to the present embodiment is disposed on the substrate surface surrounded by the dam portion 17 and supports the sheet-like resin so as not to bend. 18 is further provided. Other configurations are the same as those in the first embodiment.

  As shown in FIG. 7, the support portion 18 is formed in a lattice shape on the substrate so as to surround each FBAR element 2. As described above, since the support portion 18 is disposed adjacent to each FBAR element 2, it has a higher sound absorption effect than the configuration of the first embodiment.

  Further, the extension portion 19 is formed so as to extend from the dam portion 17 to the side where the electrode pad 3 is formed (outside the element region). Thereby, the peripheral part of the sheet-like resin 6 arranged on the upper surface of the dam part 17 can be prevented from dripping onto the electrode pad 3 or the wiring 3a, for example.

  The support portion 18 and the extension portion 19 have a thickness of about 5 μm, similarly to the dam portion 17, in consideration of the thickness of the FBAR element 2, oscillation, and the like. The support portion 18 and the extension portion 19 have a width of about 100 μm, like the dam portion 17, in order to obtain sufficient adhesion with the sheet-like resin 6 disposed on the upper surface. For the material of the support portion 18 and the extension portion 19, for example, a photosensitive resin such as a photosensitive polyimide resin is selected so that it can be formed by patterning using a photolithography technique in a semiconductor manufacturing process. Further, the support portion 18 and the extension portion 19 include, for example, a thermosetting resin such as an epoxy resin so that the support portion 18 and the extension portion 19 can be appropriately cured after patterning by the photolithography technique.

  Here, the configuration for supporting the sheet-like resin 6 is not limited to the support portion 18 and the extension portion 19, and may be a different configuration in a columnar shape or a stripe shape. Hereinafter, an example in which another support portion and an extension portion are applied to the electronic component device will be described.

  9 to 12 are plan views illustrating other examples of the electronic component device including the support portion and the extension portion. As shown in FIG. 9, the electronic component device 1 b further includes an extension portion 19 a that extends from the dam portion 17 and is formed on the substrate 4 on which the electrode pad 3 is not formed. In addition, the other structure is the same as that of the said electronic component apparatus 1a. The extension 19a and the extension 19 can sufficiently prevent the periphery of the sheet-like resin 6 from drooping.

  Further, as in the electronic component device 1c shown in FIG. 10, only the lattice-like support portions 18 are formed to prevent the sheet-like resin 6 from being bent, and the extension portions may not be formed.

  Moreover, like the electronic component device 1d shown in FIG. 11, the support part 20 formed in the stripe form based on arrangement | positioning etc. of the FBAR element 2 may be provided.

  Moreover, the column-shaped support part 21 may be provided like the electronic component apparatus 1e shown in FIG.

  As an example of the electronic component device having the support portion and the extension portion as described above, a method for manufacturing the electronic component device 1a will be described with reference to FIGS. 13A to 13E and FIGS. 14A to 14C. FIG. 13: is sectional drawing which shows the cross section of the electronic component apparatus in each manufacturing process of the electronic component apparatus which concerns on a present Example. FIG. 14 is a cross-sectional view showing a cross section of the electronic component device in each mounting step of the electronic component device according to the present embodiment.

  First, the FBAR element 2 is formed on the upper surface of the substrate 4 which is a semiconductor wafer (FIG. 13A).

  Next, a photosensitive resin 8 to be the dam portion 5 is applied by spin coating on the surface of the substrate on which a plurality of FBAR elements 2 which are electronic device elements are formed (FIG. 13B).

  Next, a frame-shaped dam portion 17 and a support portion 18 are formed by a photolithography technique so as to surround the element region where the FBAR element 2 is formed (FIG. 13C). For example, when a negative photosensitive resin such as polyimide resin is used as the material of the dam part 17 and the support part 18, the parts to be the dam part 17 and the support part 18 are exposed and developed and patterned. After this patterning, the dam portion is cured by heat treatment in order to obtain a predetermined strength. Although not shown here, the extension 19 is formed in the same manner.

  Next, a photosensitive sheet-like resin 9 for forming a hollow structure on the element region is affixed to the upper surfaces of the dam portion 17 and the support portion 18 which are frame bodies in the atmosphere (FIG. 13D).

  Next, in the same manner as in Example 1, the sheet-like resin 9 is approximately the same size as the dam portion 17 of the frame body by photolithography so as to cover each of the frame-like dam portions 17 surrounding the element region. And then cured by heat treatment (FIG. 13E).

  Next, as in the first embodiment, the substrate 4 in the wafer state is diced, and the substrate 4 (chip) obtained by singulation for each element region is placed on the mounting substrate 10 for mounting the substrate. Then, bonding is performed using the die bond resin 11 (FIG. 14A).

  Next, using a wire bonding apparatus (not shown), the electrode pad 3 of the substrate 4 (chip) and the electrode pad 12 of the mounting substrate 10 are connected by the bonding wire 15 (FIG. 14B).

  After wiring with the bonding wires 15, the mounting surface of the mounting substrate 10 on which the substrate 4 is mounted is sealed with a mold resin 16 (FIG. 14C). Thereafter, by using a dicing apparatus (not shown) to separate the mounting substrate 10, one electronic component device 1 a is obtained.

  As described above, according to the electronic component device according to the present embodiment, the dam part surrounding the element region of the FBAR element formed by the photolithography technique and the sheet-like resin disposed on the upper surface of the dam part. In addition to having a low-profile hollow structure that is configured, and further including a support part and an extension part for supporting the sheet-like resin, it is possible to reduce the size and sealing strength of an electronic component device that requires a hollow structure on the upper surface of the element region. Improvements can be made.

  In each of the embodiments described above, the case where the FBAR element is formed as the electronic device element on the substrate of the electronic component apparatus has been described. However, as described above, the SMR element of the electronic component apparatus or the MEMS such as the CCD is used. Needless to say, the same effect can be obtained when an electronic device element is formed.

It is a perspective view which shows the external appearance of the principal part structure of the electronic component apparatus which concerns on Example 1 which is 1 aspect of this invention. It is a perspective view which shows the external appearance of the principal part structure of the electronic component apparatus which concerns on Example 1 which is 1 aspect of this invention. It is sectional drawing which shows the cross section of the electronic component apparatus along the AA line of FIG. It is sectional drawing which shows the cross section in each manufacturing process of the electronic component apparatus which concerns on Example 1 which is 1 aspect of this invention. It is sectional drawing which shows the cross section in each manufacturing process of the electronic component apparatus which concerns on Example 1 which is 1 aspect of this invention. It is a perspective view which shows the external appearance of the principal part structure of the electronic component apparatus which concerns on Example 2 which is 1 aspect of this invention. It is a perspective view which shows the external appearance of the principal part structure of the electronic component apparatus which concerns on Example 2 which is 1 aspect of this invention. It is sectional drawing which shows the cross section of the electronic component apparatus along the BB line of FIG. It is a top view which shows the structure of the principal part of the electronic component apparatus which concerns on Example 2 which is 1 aspect of this invention. It is a top view which shows the structure of the principal part of the electronic component apparatus which concerns on Example 2 which is 1 aspect of this invention. It is a top view which shows the structure of the principal part of the electronic component apparatus which concerns on Example 2 which is 1 aspect of this invention. It is a top view which shows the structure of the principal part of the electronic component apparatus which concerns on Example 2 which is 1 aspect of this invention. It is sectional drawing which shows the cross section in each manufacturing process of the electronic component apparatus which concerns on Example 2 which is 1 aspect of this invention. It is sectional drawing which shows the cross section in each manufacturing process of the electronic component apparatus which concerns on Example 2 which is 1 aspect of this invention.

Explanation of symbols

1, 1a, 1b, 1c, 1d, 1e Electronic component device 2 FBAR element 3 Electrode pad 4 Substrate 5 Dam portion 6 Sheet resin 7 Cavity 8 Photosensitive resin 9 Sheet resin 10 Mounting substrate 11 Die bond resin 12 Electrode pad 13 Internal wiring 14 Electrode pad 15 Bonding wire 16 Mold resin 17 Dam part 18 Support part 19, 19a Extension part 20 Support part 21 Support part

Claims (5)

An electronic device element is formed on the upper surface, and a substrate on which an electrode pad connected to the electronic device element is formed;
A dam portion formed on the upper surface of the substrate so as to surround an element region of the substrate surface on which the electronic device element is formed;
A sheet-like resin that is disposed on the upper surface of the dam portion so as to cover the element region, and forms a hollow structure on the element region;
An electronic component device comprising:   The electronic component device according to claim 1, further comprising a support portion that is disposed on the substrate surface surrounded by the dam portion and supports the sheet-shaped resin so as not to bend.   The electronic component device according to claim 1, wherein the dam portion is a photosensitive resin.   The electronic component device according to claim 1, wherein the sheet-like resin has photosensitivity. Forming an electronic device element on the substrate;
After forming the electronic device element, a photosensitive resin is applied on the substrate, and the dam portion is patterned by exposing and developing so as to surround an element region on the substrate where the electronic device element is formed. Form the
Curing the dam part,
A photosensitive sheet-like resin is attached to the upper surface of the dam part, and this sheet-like resin is exposed and developed so that at least the element region is covered, and patterned,
Curing the patterned sheet resin,
After wiring an electrode pad formed on the substrate and electrically connected to the electronic device element, and a mounting substrate for mounting the substrate, the mounting surface of the mounting substrate is sealed. A method for manufacturing an electronic component device.

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