JP2006222384A - Integrated thin film solar cell and manufacturing method thereof - Google Patents

Abstract

An object of the present invention is to provide an integrated thin-film solar cell and a method of manufacturing the same, in which leakage current is reduced at a portion where semiconductor films are stacked when a module is manufactured with a series connection structure.
A first electrode film (11) includes a first electrode film (11), a semiconductor film (12), and a second electrode film (13) sequentially stacked on an insulating substrate (10). Dividing into stripes so that the substrate is exposed (13p), stacking the semiconductor film and dividing into stripes so that the surface of the first electrode film is exposed adjacent to and parallel to the dividing groove of the first electrode film (12p), and the first electrode film (11) and the second electrode film (13) are electrically separated by laminating the second electrode film on and adjacent to and parallel to the dividing groove of the semiconductor film. The resistivity ρ1 of the semiconductor film that is connected in series and stacked on at least the dividing groove (13p) of the first electrode film is the resistance of the semiconductor film stacked in contact with the first electrode film on the unit cell (14). It is made larger than the rate ρ2.
[Selection] Figure 1

Description

  The present invention relates to a solar cell, for example, an integrated series-connected solar cell in which a semiconductor layer is a thin light absorption layer and a method for manufacturing the same.

  In the case of solar cells made of thin films, a thin film is conventionally laminated on an insulating substrate such as a glass substrate, divided into strips and connected in series, and high voltage integrated solar cells have been produced. . The first electrode film is divided into stripes, a semiconductor film is stacked thereon and divided adjacent to the groove of the first electrode film, and the second electrode film is further stacked and the semiconductor film is divided into grooves. Are adjacent to each other and are connected in series by contact between the electrode films (Patent Document 1).

Regarding the structure and manufacturing method of a conventional integrated series-connected solar cell, CuInSe ₂ (CIS), which is a compound semiconductor thin film (chalcopyrite structure semiconductor thin film) composed of Ib group, IIIb and VIb group elements, or Cu in which Ga is dissolved ( An example in the case of using In, Ga) Se ₂ (CIGS) or CuInS ₂ for the light absorption layer will be described with reference to FIGS. 4A to 4E. As shown in FIG. 4A, after a Mo film or the like to be the first electrode film 2 is formed on the insulating substrate 1 by sputtering, the strip-shaped first electrode film 2 is formed by patterning on the Mo film or the like. To do. After patterning, as shown in FIG. 4B, from a laminated film of a p-type Cu (In, Ga) Se ₂ thin film and a compound thin film containing an n-type II group and VI group by vapor deposition, sputtering, chemical deposition, or the like. A semiconductor film 3 is formed. Thereafter, as shown in FIG. 4C, the semiconductor film 3 is patterned in the same stripe shape adjacent to the dividing groove of the first electrode film. Thereafter, as shown in FIG. 4D, a transparent conductive film such as a ZnO film or an ITO film is formed as the second electrode film 4. Then, as shown in FIG. 4E, the second electrode film 4 is divided into strips by patterning adjacent to the dividing grooves of the semiconductor film. In the integrated thin film solar cell of FIG. 4E, each unit cell 5 is connected in series by connecting the second electrode film 4 of each unit cell 5 to the first electrode film 2 of the adjacent unit cell 5. Yes. 4A, 4C, and 4E, thin film patterning is performed by laser beam irradiation or mechanical patterning with a cutter knife or needle. When the semiconductor film 3 is an amorphous silicon film, the first electrode film 2 is a transparent conductive film, and the second electrode film 4 is a metal electrode film.
Japanese Patent Publication No. 4-72392

  In the above prior art, when a module is manufactured in a series connection structure, a semiconductor film is stacked in a groove obtained by dividing the first electrode film, so that a leakage current is generated in a portion where the semiconductor film is stacked, and a complete cell is used. A lot of leakage current flows. Since the direct connection portion is a non-power generation region that does not contribute to power generation, it is required to be as small as possible. However, the width of the first electrode film dividing groove is reduced below a certain width in order to reduce leakage current. could not.

  In order to solve the above-described conventional problems, the present invention reduces the leakage current flowing through the semiconductor film stacked in the groove obtained by dividing the first electrode film, and further narrows the groove width of the first electrode film. The solar cell which reduced the non-power generation area | region and improved the conversion efficiency, and its manufacturing method are provided.

The integrated thin film solar cell of the present invention is an integrated thin film solar cell in which two or more unit cells connected in series are formed on an insulating substrate. The first electrode film and the semiconductor sequentially stacked on the insulating substrate Including a film and a second electrode film, and is divided into stripes so as to expose the substrate to the first electrode film, and a semiconductor film is laminated to be adjacent to and parallel to the dividing groove of the first electrode film. The first electrode film and the second electrode are divided into stripes so as to expose the surface of the first electrode film, the second electrode film is laminated, and the first electrode film and the second electrode are divided in parallel and adjacent to the dividing groove of the semiconductor film. Electrically connect the membrane in series,
The resistivity ρ1 of the semiconductor film stacked at least on the dividing groove of the first electrode film is larger than the resistivity ρ2 of the semiconductor film stacked in contact with the first electrode film on the unit cell.

  The method for manufacturing an integrated thin film solar cell according to the present invention is the method for manufacturing an integrated thin film solar cell in which two or more unit cells connected in series are formed on an insulating substrate, wherein the first electrode film is formed on the insulating substrate. After forming the first electrode film, a part of the first electrode film is striped to divide the first electrode film into strips, and a pn junction is formed on the first electrode film. A second step of dividing the semiconductor film into strips by removing a part of the semiconductor film after forming a semiconductor film including the semiconductor film, and removing the semiconductor film on the semiconductor film and exposing the semiconductor film Forming a second electrode film on the first electrode film, and then removing a part of the second electrode film in a stripe shape to divide the second electrode film into a strip shape; Including a step, and laminated on the dividing groove of the first electrode film. A semiconductor film, characterized by high resistance prior to dividing the semiconductor film into strips.

Another method of manufacturing an integrated thin film solar cell according to the present invention is an integrated thin film solar cell in which two or more unit cells connected in series are formed on an insulating substrate, wherein the first electrode film is formed on the insulating substrate. After forming, a first step of removing a part of the first electrode film in a stripe shape to divide the first electrode film into a strip shape, and including a pn junction on the first electrode film After forming the semiconductor film, a second step of dividing the semiconductor film into strips by removing a part of the semiconductor film in stripes, and the semiconductor film and the semiconductor film are removed and exposed A third step of dividing the second electrode film into strips by forming a second electrode film on the first electrode film and then removing a part of the second electrode film in a stripe shape. And is laminated on the dividing groove of the first electrode film Membrane, forming an oxide by applying oxygen gas (O ₂₎ at the same time when the division is irradiated with a laser beam a semiconductor film into strips, characterized by high resistance.

  According to the present invention, since the resistance of the semiconductor film in the portion where the first electrode film is laminated in the divided grooves is increased, the leakage current flowing in the semiconductor film between the first electrode grooves can be reduced. Furthermore, since the leakage current can be reduced, the groove width of the first electrode groove can be reduced, so that the non-power generation region is reduced and the generated current increases. These two effects improve the conversion efficiency of the module.

  In the solar cell of the present invention, in the case where a plurality of semiconductor films are stacked, the semiconductor film a formed in contact with the first electrode film is stacked on the dividing groove of the first electrode film. The resistivity ρ1 of the formed semiconductor film a is larger than the resistivity ρ2 of the semiconductor film a stacked in contact with the first electrode film on the unit cell.

In the solar cell of the present invention, the carrier density of the semiconductor film a stacked on the dividing groove of the first electrode film is preferably 1 × 10 ¹⁵ / cm ³ or less. Since the current solar cell carrier density is often 1 × 10 ¹⁶ / cm ³ or more, if the mobility is the same at 1 × 10 ¹⁵ / cm ³ or less, the resistance becomes 10 times and the first electrode groove The width can be reduced to 1/10. Therefore, the non-power generation area can be reduced, the power generation area is increased, and the energy conversion efficiency is improved. For the above reasons, the carrier density is preferably not more than × 10 ¹⁵ / cm ³ . Even when the width of the first electrode groove cannot be reduced, the leakage current flowing between the grooves of the first electrode film becomes 1/10, and the shunt resistance (parallel resistance) is improved. When the parallel resistance is 200 Ω · cm ² , it becomes 2000 Ω · cm ² , and the conversion efficiency is improved by about 0.2 to 0.5%.

  The mobility of the semiconductor film a stacked on the dividing groove of the first electrode film is preferably 5 cmV · s or less. The mobility of the P-type semiconductor layer of current thin-film solar cells is often 10 to 20 cmV · s or more. Assuming that the carrier density is constant, when the mobility is 5 cmV · s or less, the resistance is the product of the carrier density and the mobility, so the resistance is doubled. The resistance is doubled, and the width of the first electrode groove can be halved. Therefore, the non-power generation area can be reduced, the power generation area is increased, and the energy conversion efficiency is improved. Therefore, the mobility is preferably 5 cmV · s or less.

In addition, a compound semiconductor film containing a group Ib element, a group IIIb element, and a group VIb element, a compound semiconductor film containing a group II and group VI element, an amorphous silicon thin film, a polycrystalline silicon thin film, and a microcrystalline silicon thin film. Of these, at least one thin film for solar cell is preferred. In particular, a semiconductor material having a photoelectric conversion effect and a higher light absorption property, for example, a material having a light absorption coefficient in the visible range of 1 × 10 ³ (cm ⁻¹ ) or more is desirable.

In the method for manufacturing a solar cell according to the present invention, when the semiconductor film is a compound semiconductor film containing a group Ib element, a group IIIb element, and a group VIb element, the first electrode film is formed on the insulating substrate. A first step of removing a part of the first electrode film in a stripe shape to divide the first electrode film into a strip shape, and a semiconductor film including a pn junction on the first electrode film After the formation, it is preferable to form an oxide by simultaneously applying an oxygen gas (O ₂ ) while irradiating the semiconductor film laminated on the groove of the first electrode film with a laser beam. At this time, an oxide having high resistance is formed by an oxidation reaction caused by the heat of the laser beam. Since an oxide film generally has a high band gap, it tends to have a high resistance.

  In the method for manufacturing a solar cell according to the present invention, when the semiconductor film is an amorphous silicon thin film, a polycrystalline silicon thin film, or a microcrystalline silicon thin film, after forming the first electrode film on the insulating substrate, A first step of removing a part of the first electrode film in a stripe shape to divide the first electrode film into strips, and forming a semiconductor film including a pn junction on the first electrode film Further, when forming the semiconductor film, if only the portion of the semiconductor film laminated on the groove of the first electrode film is focused ion beam (FIB), if the surface side of the semiconductor layer is N-type, B ions and Al ions are In the case of the P type, it is preferable to increase the resistance by implanting N ions or P ions. In the case of an N-type semiconductor layer, a high-resistance I-type is formed by doping a P-type additive. Similarly, in the case of a P-type semiconductor layer, an N-type additive is doped to obtain a high-resistance I-type.

  In the method for manufacturing a solar cell of the present invention, when the semiconductor film is an amorphous silicon thin film, a polycrystalline silicon thin film, or a microcrystalline silicon thin film, if the surface in contact with the first electrode film is p-type, a group V element such as N or P In the case of n-type, a film containing a group III element such as B or Al is formed between the insulating substrate and the first electrode film, and the film is exposed to the first electrode film. When the semiconductor film is divided into stripes and further formed, it is preferable to increase the resistance of the semiconductor film stacked on the groove of the first electrode film. Increasing the resistance in the same process reduces the cost.

Further, in an integrated thin film solar cell in which two or more unit cells connected in series are formed on an insulating substrate, after forming the first electrode film on the insulating substrate, a part of the first electrode film A first step of dividing the first electrode film into strips by forming a semiconductor film including a pn junction on the first electrode film, and a part of the semiconductor film A second step of dividing the semiconductor film into strips by removing the stripes, and a second electrode film on the semiconductor film and on the first electrode film exposed by removing the semiconductor film A third step of dividing the second electrode film into strips by removing a part of the second electrode film in a stripe shape, and laminating on the dividing groove of the first electrode film Laser beam into a strip of semiconductor film By applying oxygen gas (O ₂₎ at the same time to form an oxide when dividing by irradiating it or preferably to high resistance. At this time, an oxide having high resistance is formed by an oxidation reaction caused by the heat of the laser beam.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that in the following embodiments, the same portions are denoted by the same reference numerals, and redundant description is omitted.

(Embodiment 1)
In Embodiment 1, a case where a compound semiconductor film containing a group Ib element, a group IIIb element, and a group VIb element is used as a light absorption layer will be described as an example of the structure and manufacturing method of the solar cell of the present invention. FIG. 1 shows a cross-sectional view of the structure.

The insulating substrate 10 may be not only a conventional glass substrate but also a substrate having a high resistance insulating film formed on the surface or a substrate having an insulating surface. As shown in FIG. 1, a Mo film, for example, is formed as a first electrode film 11 on an insulating substrate 10 and is divided in accordance with the unit cell width. On top of that, a chalcopyrite structure semiconductor thin film, for example, a CuInSe ₂ (CIS) film or a Cu (In, Ga) Se ₂ (CIGS) film in which Ga is dissolved is laminated as a p-type semiconductor film. Further, as an n-type semiconductor film, for example, a compound layer containing at least a group II and group VI element such as CdS, ZnO, ZnMgO, Zn (O, OH), Zn (O, OH, S) is formed thinly, and pn The semiconductor film 12 includes a junction. The dividing grooves 12p of the semiconductor film 12 are formed in stripes adjacent to the dividing grooves 11p of the first electrode film 11. The dividing groove 13p of the second electrode film 13 is formed adjacent to the groove 12p. In this way, the second electrode film of each solar cell unit is connected to the first electrode film of the adjacent solar cell unit cell 14, whereby the adjacent solar cell units are directly connected.

At this time, in this embodiment, the resistivity ρ1 of the semiconductor film 12a1 stacked on the dividing groove of the first electrode film is greater than the resistivity ρ2 of the semiconductor film 12a2 stacked in contact with the first electrode film on the unit cell. Is also getting bigger. Further, the p-type CIS film or CIGS film has a carrier density of 1 × 10 ¹⁵ / cm ³ or less and a mobility of 5 cmV · s or less in the region laminated on the dividing groove of the first electrode film. At this time, the p-type CIS film or CIGS film laminated on the first electrode film has a carrier density of 1 × 10 ¹⁶ / cm ³ and a mobility of about 10 cmV · s.

Next, an example of the manufacturing method will be described (see FIGS. 2A to 2D). First, a film 10 a containing Zn or Al is formed on the insulating substrate 10. As this film, for example, a high resistance ZnO film or Al ₂ O ₃ film can be considered. Further, for example, a Mo film is formed as the first electrode film 11 by a sputtering method. The film thickness at this time is 0.3 to 2.0 μm. Thereafter, the strip-shaped first electrode film 11 is divided by irradiating a continuous oscillation laser beam to remove a part of the Mo film to form the groove 11p (FIG. 2A). A chalcopyrite structure semiconductor thin film, for example, a CuInSe ₂ (CIS) film or a Cu (In, Ga) Se ₂ (CIGS) film in which Ga is dissolved is deposited as a p-type semiconductor film so as to cover the first electrode film 11. It forms into a film by the method or sputtering method. When the CIS film or CIGS film is formed at a temperature of 500 ° C. or higher, Zn ions or Al ions diffuse from the film containing Zn or Al formed under the first electrode film, and a P-type CIS film or CIGS film is formed. Becomes I-type and increases resistance. The P-type CIS film or CIGS film is a P-type semiconductor due to the presence of Cu vacancies. For example, when Zn ions enter the Cu vacancies, they become I-type or N-type, and have high resistance. Turn into. At this time, the carrier density is 1 × 10 ¹⁵ / cm ³ or less, and the mobility is 5 cmV · s or less.

  Further, as an n-type semiconductor film, for example, a compound layer containing at least a group II and group VI element such as CdS, ZnO, ZnMgO, Zn (O, OH), Zn (O, OH, S) or the like is chemically deposited or sputtered. The semiconductor film 12 including a pn junction is formed by the method (FIG. 2B).

  Thereafter, the semiconductor film 12 is subjected to laser patterning or mechanical patterning adjacent to the dividing groove of the first electrode film 11 in a stripe shape to form the groove 12p (FIG. 2C).

  Thereafter, after the second electrode film 13 is formed on the semiconductor film 12, a part of the second electrode film 13 is removed in a stripe shape by mechanical patterning or laser patterning to form the division grooves 13p (FIG. 2D). . The groove 13p is formed adjacent to the groove 12p. At this time, a part of the semiconductor film 12 may be removed in a stripe shape together with a part of the second electrode film 13. In this way, two or more solar cell unit cells 14 connected in series can be integrated on the substrate to form an integrated thin film solar cell. The second electrode film 13 of each solar cell unit is connected to the first electrode film 11 of the adjacent solar cell unit cell 14, whereby the adjacent solar cell units are directly connected.

  As described above, since the resistance of the semiconductor film in the portion where the first electrode film is laminated in the divided grooves is increased, leakage current flowing in the semiconductor film between the first electrode grooves can be reduced. Furthermore, since the leakage current can be reduced, the groove width of the first electrode groove can be reduced, so that the non-power generation region is reduced and the generated current increases. These two effects improve the conversion efficiency of the module.

(Embodiment 2)
In Embodiment 2, as an example of the structure and manufacturing method of the solar cell of the present invention, a case where an amorphous silicon layer and a thin polycrystalline silicon layer are used as a light absorption layer in tandem will be described (FIGS. 3A-B).

As shown in FIG. 3A, a transparent electrode film 202 is formed on a translucent insulating substrate 201 such as a glass substrate. For example, a SnO ₂ film or an indium-tin oxide alloy (ITO) film is formed on the transparent electrode film 202. Etc. are used. Dividing grooves are formed by patterning the transparent electrode film 202 at equal intervals.

  Next, an amorphous silicon semiconductor film 203a having a PIN junction is formed on the transparent electrode film 202 in the order of the P layer, the I layer, and the N layer. Further, a thin polycrystalline silicon semiconductor film 203b is formed in the order of the P layer, the I layer, and the N layer. A high-resistance transparent film may be used as an intermediate layer between the amorphous silicon semiconductor film and the thin polycrystalline silicon semiconductor film. The two-layer semiconductor film 203 is patterned adjacent to the dividing groove 202p of the transparent electrode film 202 to form the groove 203p. As shown in FIG. 3B, patterning is performed by irradiating the second harmonic wave 210 of an Nd: YAG laser having a wavelength of 0.532 μm from the back surface of the substrate, and selectively removing only the semiconductor film 203 through the glass substrate and the transparent electrode. To do. Reference numeral 211 denotes a condenser lens. At this time, oxygen gas 220 is supplied from the side of the dividing groove 202p of the transparent electrode film to increase the resistance of the semiconductor film 203 on the dividing groove 202p. Reference numeral 221 denotes an oxygen gas supply pipe.

  Thereafter, a part of the metal electrode film 204 is removed in a stripe shape by laser patterning to form a division groove 204p, and the metal electrode film 204 is divided into strips. The groove 204p is formed so as to be adjacent to the groove 203p. Note that at this time, a part of the semiconductor film 203 may be removed in a stripe shape together with a part of the metal electrode film 204. In this way, two or more solar cell unit cells connected in series can be integrated on the substrate to form an integrated thin film solar cell. The metal electrode film 204 of each solar cell unit is connected to the transparent electrode film 202 of the adjacent solar cell unit cell, whereby the adjacent solar cell units are directly connected.

(Embodiment 3)
In Embodiment 3, a conventional example and a comparative example of the present invention will be described in the case where a compound semiconductor film containing a group Ib element, a group IIIb element, and a group VIb element is used as the light absorption layer. As a conventional example, the resistivity ρ1 of the semiconductor film a stacked on the dividing groove of the first electrode film in Embodiment 1 is equal to the resistivity ρ2 of the semiconductor film a stacked in contact with the first electrode film on the unit cell. The same sample as that in which ρ1> ρ2 was satisfied and the first electrode film groove width was changed from the conventional 100 μm to 10 μm was manufactured. The sub-module of 10 cm size was manufactured with a pitch width of 3 mm and an effective area of 81 cm ² . Current-voltage characteristics were measured at a temperature of 25 ° C. using AM1.5 100 mW / cm ² pseudo sunlight, and the results shown in Table 1 were obtained.

(Note 1) Eff is energy conversion efficiency.
(Note 2) Isc is a short circuit current under light irradiation.
(Note 3) Voc is a voltage generated in an open state (open end voltage).
(Note 4) FF is a fill factor.

  First, the current is improved as compared with the prior art because the leakage current flowing in the semiconductor film between the first electrode grooves is reduced, and the non-power generation region is reduced. The FF is further improved. This is because the resistance of the semiconductor film in the portion where the first electrode film is laminated in the divided grooves is increased, and the leakage current flowing in the semiconductor film between the first electrode grooves is reduced. It is. As described above, the integrated solar cell of the present invention can realize a highly efficient solar cell with a small leakage current.

FIG. 1 is a cross-sectional view showing an example of the solar cell of the present invention. 2A to 2D are process cross-sectional views of a method for manufacturing a solar cell according to an example of the present invention. 3A-B are process cross-sectional views of a method for manufacturing a solar cell in one example of the present invention. It is process sectional drawing which shows an example about the manufacturing method of the conventional solar cell.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Insulating substrate 11 1st electrode film 12 Semiconductor film 13 including pn junction 2nd electrode film 14 Solar cell unit cell 11p, 12p, 13p Dividing groove 201 Translucent insulating substrate 201
202 Transparent electrode film 203a Amorphous silicon semiconductor film 203b Polycrystalline silicon semiconductor film

Claims (12)

In an integrated thin film solar cell in which two or more unit cells connected in series are formed on an insulating substrate,
Including a first electrode film, a semiconductor film and a second electrode film sequentially stacked on the insulating substrate;
Dividing into a stripe shape so as to expose the substrate to the first electrode film,
A semiconductor film is stacked and divided into stripes so as to expose the surface of the first electrode film adjacent to and parallel to the dividing groove of the first electrode film,
The first electrode film and the second electrode film are electrically connected in series by stacking the second electrode film adjacent to and in parallel with the dividing groove of the semiconductor film,
The integration characterized in that the resistivity ρ1 of the semiconductor film laminated at least on the dividing groove of the first electrode film is larger than the resistivity ρ2 of the semiconductor film laminated in contact with the first electrode film on the unit cell. Type thin film solar cell.   When the semiconductor film is laminated by a single film or a plurality of films, and when the semiconductor films are laminated by a plurality of films, the resistivity ρ1 of the semiconductor film laminated at least on the dividing groove of the first electrode film is on the unit cell. The integrated thin film solar cell according to claim 1, wherein the resistivity ρ <b> 2 of the semiconductor film stacked in contact with the first electrode film is larger. ^3. The integrated thin film solar cell according to claim 1, wherein a carrier density of a semiconductor film stacked on the dividing groove of the first electrode film is 1 × 10 ¹⁵ / cm ³ or less.   3. The integrated thin film solar cell according to claim 1, wherein the mobility of the semiconductor film stacked on the dividing groove of the first electrode film is 5 cmV · s or less.   The semiconductor film includes a compound semiconductor film including a group Ib element, a group IIIb element, and a group VIb element, a compound semiconductor film including a group II and a group VI element, an amorphous silicon thin film, a polycrystalline silicon thin film, and a microcrystalline silicon thin film The integrated thin film solar cell according to claim 1, which is at least one thin film for solar cell selected from In a method for manufacturing an integrated thin film solar cell in which two or more unit cells connected in series are formed on an insulating substrate,
A first step of forming a first electrode film on the insulating substrate and then removing a part of the first electrode film in a stripe shape to divide the first electrode film into a strip shape;
A second step of dividing the semiconductor film into strips by forming a semiconductor film including a pn junction on the first electrode film and then removing a part of the semiconductor film in a stripe shape;
A second electrode film is formed on the semiconductor film and on the first electrode film exposed by removing the semiconductor film, and then a part of the second electrode film is removed in a stripe shape. Including a third step of dividing the two electrode films into strips,
A method of manufacturing an integrated thin film solar cell, comprising: increasing a resistance of a semiconductor film laminated on a dividing groove of a first electrode film before dividing the semiconductor film into strips.   The semiconductor film is a compound semiconductor film containing a group Ib element, a group IIIb element, and a group VIb element, a film containing Zn or Al is formed between the insulating substrate and the first electrode film, Claims: 1 is divided into stripes so that a film containing Zn or Al is exposed on one electrode film, and when the semiconductor film is formed, the resistance of the semiconductor film stacked on the groove of the first electrode film is increased. Item 7. A method for producing an integrated thin-film solar cell according to Item 6. The semiconductor film is a compound semiconductor film containing a group Ib element, a group IIIb element, and a group VIb element. After forming the first electrode film on the insulating substrate, a part of the first electrode film is formed. A first step of stripping the first electrode film by striping and forming a semiconductor film including a pn junction on the first electrode film; 7. The method of manufacturing an integrated thin-film solar cell according to claim 6, wherein an oxide gas is formed by simultaneously applying oxygen gas (O ₂ ) while irradiating a semiconductor film laminated on the groove with a laser beam. Wherein it is a laser beam from the irradiation substrate side of the irradiation method of an integrated thin-film solar cell according to claim 8 injection is a semiconductor film side of the oxygen gas (O _2). The semiconductor film is at least one semiconductor thin film selected from an amorphous silicon thin film, a polycrystalline silicon thin film, and a microcrystalline silicon thin film;
A first step of forming a first electrode film on the insulating substrate and then removing a part of the first electrode film in a stripe shape to divide the first electrode film into a strip shape; After forming a semiconductor film including a pn junction on the first electrode film,
Further, when forming the semiconductor film, only the portion of the semiconductor film laminated on the groove of the first electrode film is focused ion beam (FIB), and when the surface side of the semiconductor layer is n-type, B ions or Al ions are The method of manufacturing an integrated thin film solar cell according to claim 6, wherein in the case of p-type, nitrogen (N) ions or phosphorus (P) ions are implanted to increase resistance. The semiconductor film is at least one semiconductor thin film selected from an amorphous silicon thin film, a polycrystalline silicon thin film, and a microcrystalline silicon thin film;
When the surface in contact with the first electrode film is P-type, a film containing a group V element composed of N or P is formed on the insulating substrate and a film containing a group III element composed of B or Al is formed on the insulating substrate. Formed between the electrode films, divided into stripes so as to expose the film on the first electrode film, and further laminated on the groove of the first electrode film when forming a semiconductor film The method for producing an integrated thin film solar cell according to claim 6, wherein the resistance of the semiconductor film is increased. In an integrated thin film solar cell in which two or more unit cells connected in series are formed on an insulating substrate,
A first step of forming a first electrode film on the insulating substrate and then removing a part of the first electrode film in a stripe shape to divide the first electrode film into a strip shape;
A second step of dividing the semiconductor film into strips by forming a semiconductor film including a pn junction on the first electrode film and then removing a part of the semiconductor film in a stripe shape;
A second electrode film is formed on the semiconductor film and on the first electrode film exposed by removing the semiconductor film, and then a part of the second electrode film is removed in a stripe shape. Including a third step of dividing the two electrode films into strips,
When the semiconductor film laminated on the dividing groove of the first electrode film is divided by irradiating a laser beam in a strip shape, an oxide is formed by simultaneously applying oxygen gas (O ₂ ) to form an oxide. An integrated thin film solar cell manufacturing method characterized by comprising:

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