JP2006222060A - Organic light emitting device manufacturing method, organic light emitting device, electronic device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To produce an organic light emitting device excellent in light emitting characteristics which suppresses deterioration of the function of an organic layer due to the influence of heat applied to the organic layer at the time of stacking and does not limit the material of the film to be stacked.
SOLUTION: At least one of which is an organic layer, an interface of one layer 54 and an interface of the other layer 90 are bonded to each other, and then pressed by the pressure roller 140 against both bonded surfaces. At the same time, the two layers are bonded by applying vibration from the ultrasonic vibrator 150 to both interfaces of these organic layers and locally heating them.
[Selection] Figure 3

Description

  The present invention relates to a method for manufacturing an organic light emitting element using an organic material as a light emitting material, an organic light emitting element, an electronic device, and an electronic apparatus.

  An organic light emitting device has a structure in which an organic layer including a thin film (light emitting layer) containing at least a fluorescent organic compound is sandwiched between a cathode and an anode, and electrons and holes (holes) are injected into the thin film. In this device, excitons (excitons) are generated by recombination, and light is emitted by utilizing light emission (fluorescence / phosphorescence) when the excitons are deactivated.

  In order to make this organic light emitting device emit light efficiently with high brightness, the energy barrier between the electrode and the light emitting layer is reduced, carrier movement to the light emitting layer is facilitated, and carrier injection efficiency from the electrode to the light emitting layer is improved. A layered structure in which a hole transport layer is formed of an organic material and added between an electrode and a light emitting layer is known. A method of manufacturing an organic light emitting device including such a laminated structure is manufactured by a process of sequentially forming an anode, a hole transport layer, a light emitting layer, and a cathode on a substrate as described in Patent Document 1 below. It was.

WO98-12589

  However, in the conventional method, after the organic layer is formed, another layer is laminated on the organic layer to form the organic light emitting element. The organic layer was adversely affected by this heat. In particular, since the metal-based film is formed at a high temperature, heat is transferred to the entire formed stack, thereby reducing the function of the organic layer. Furthermore, if the layers to be stacked are limited so as not to exceed the allowable temperature of the organic layer in order to suppress the above-described deterioration of the function, the light emitting characteristics of the organic light emitting element cannot be improved because the materials of the stacked layers are limited. It was.

  In order to solve the above-described problems, an organic light-emitting device manufacturing method of the present invention includes an anode layer, a cathode layer, and an organic layer having at least a light-emitting layer that is laminated between the two electrode layers and exhibits a luminescent color. A method for producing a light-emitting element, wherein at least one of the organic layers is a process of bonding the interface of one layer and the interface of the other layer facing each other, and pressing the bonded interfaces together, And joining the two layers by locally heating the two interfaces.

  According to this invention, since both interfaces of the two layers bonded together are locally heated and bonded, in addition to suppressing the influence of heat on the organic layer at the time of bonding, each organic layer has its own Because it is not affected by heat when other layers laminated before are formed, there is little deterioration of the function of the organic layer due to heat, and it has excellent light emitting characteristics that do not limit the material constituting other layers An organic light emitting device can be realized.

In the present invention, it is preferable that the pressed interfaces are vibrated and heated by heat generated in the vicinity of the interfaces.
According to the present invention, the kinetic energy due to the vibration between the interfaces is converted into thermal energy at the interface that is in pressure contact, so that local heating limited to the vicinity of the interface can be realized.

In the present invention, the vibration may be ultrasonic vibration.
In the present invention, it is preferable that a predetermined modulation is added to the vibration.
According to the present invention, since the vibration state changes by adding modulation to the vibration, the entire interface can be efficiently heated.

  In the present invention, the one layer may be the cathode layer, and the other layer may be the light emitting layer. In the present invention, the one layer may be the light emitting layer, and the other layer may be a hole transport layer that transports holes to the light emitting layer.

In the present invention, the one layer may be the anode layer, and the other layer may be the hole transport layer.
In the present invention, the one layer may be the hole transport layer, and the other layer may be a hole injection layer that takes holes from the anode.
In the present invention, the one layer and the other layer may be formed of the same material.

In the present invention, at least one of the two layers may be a layer formed by a dry film forming method.
The present invention can also be applied to a layer of a poorly soluble low molecular material formed by a dry film forming method.
In the present invention, the one layer may be the cathode layer, and the other layer may be an electron transport layer that transports electrons to the light emitting layer.
In the present invention, the one layer may be an electron injection layer that takes in electrons from the cathode, and the other layer may be the electron transport layer.
In the present invention, the one layer may be the light emitting layer, and the other layer may be the electron transport layer.
In the present invention, the interface of the one layer and the interface of the other layer preferably have different areas.
According to the present invention, when the two interfaces are bonded together, alignment becomes easy.

In this invention, the partition which isolate | separates the said organic layer may be formed in either one of said one layer or said other layer.
In the present invention, a partition for separating the organic layer may be formed in both the one layer and the other layer.
According to the present invention, in the step of joining the bonded organic layers, pressure does not concentrate on the organic layer due to the partition walls, and the partition walls serve as cushions, and irregularities are formed while the optimum pressure is maintained. it can.

In the present invention, it is preferable that a step of vibrating at least one of the two interfaces to add irregularities to the surface of the interface is provided before the step of bonding the two interfaces.
According to this invention, the organic material in the vicinity of the interface is made mist by vibrating at least one interface before bonding, and the solvent necessary for coating can be removed. Furthermore, since at least one interface becomes uneven before bonding, it can bond with high adhesiveness.

  Then, by applying the organic light-emitting element manufactured by the above-described organic light-emitting element manufacturing method to an electronic device and an electronic apparatus equipped with the electronic device, the organic light-emitting element having excellent light-emitting characteristics, and the organic light-emitting element An electronic device and an electronic apparatus using the can be provided.

The present invention includes a step of forming the anode layer on the substrate, a step of forming a release layer for peeling the anode layer from the substrate between the substrate and the anode layer, the substrate and the anode It is preferable to further comprise a step of peeling the layer with the peeling layer by the vibration.
According to this invention, the bonding step for bonding the bonded organic layers and the peeling step at the peeling layer can be performed at the same time by using the same vibration or by modulating the wavelength.

Hereinafter, the present invention will be described with reference to the drawings. 1 to 9 are diagrams showing an embodiment of an organic light emitting device manufacturing method, an organic light emitting device, an electronic device, and an electronic apparatus according to the present invention.
(Embodiment 1)

(Formation layer on the anode side)
The organic light emitting device in the present invention is formed by forming electrodes and organic layers on two substrates by a wet film forming method, bonding the organic layers together, and then bonding them.

FIG. 1 is a diagram illustrating a hole transport layer which is an organic layer formed on the anode side which is one electrode. According to this figure, the anode side formation layer 1 first forms a release layer 20 on a transparent glass substrate 10. As the release layer 20, an amorphous silicon film containing 8 atomic% of hydrogen is formed with a thickness of 120 nm by a low pressure CVD method. This silicon film is formed under the condition of an atmospheric temperature of 425 degrees using Si ₂ H ₆ gas as a source gas.

  Next, a base protective film 30 is formed on the release layer 20. The base protective film 30 is a kind of silicon oxide film, and is formed with a thickness of about 2000 to 5000 angstroms by plasma CVD using TEOS (tetraethoxysilane) or oxygen gas as a source gas.

Next, the semiconductor element layer 4 including a plurality of layers is formed on the base protective film 30. First, a semiconductor film (not shown) made of an amorphous silicon film is formed. This semiconductor film is formed on the surface of the base protective film 30 with a thickness of about 300 to 700 angstroms by the plasma CVD method with the temperature of the glass substrate 10 set to about 350 degrees. Next, the semiconductor film is crystallized into a polysilicon film 62 by performing a crystallization process such as laser annealing or solid phase growth on the semiconductor film. Here, the laser annealing method uses, for example, an excimer laser line beam having a long beam length of 400 mm, the output intensity is about 200 mJ / cm ² , and the peak value of the laser intensity in the short direction of the line beam. The line beam is scanned so that a portion corresponding to 90% of each overlaps each region.

  Next, a gate insulating film 40 made of a silicon oxide film or a nitride film is formed. The gate insulating film 40 is patterned to form an island-like semiconductor film by patterning the semiconductor film, and the surface thereof has a thickness of approximately 40 nm by a plasma CVD method using TEOS (tetraethoxysilane) or oxygen gas as a source gas. Formed at about 600-1500 angstroms. Further, a gate electrode 64 is formed on the gate insulating film 40. The gate electrode 64 is formed by forming a conductive film made of a metal film of aluminum, tantalum, molybdenum, titanium, tungsten, or the like by sputtering and then patterning.

  Next, source / drain regions 65 are formed in the polysilicon film 62. The source / drain regions 65 are formed by implanting impurities such as phosphorus and boron into the polysilicon film 62 in a self-aligning manner using the gate electrode 64. In this way, the TFT 66 is formed in the semiconductor element layer 4.

  Subsequently, a first interlayer insulating film 42 is formed on the gate insulating film 40, and a contact hole is formed in this film. A source / drain electrode 67 is formed in the contact hole by film formation and patterning.

  Next, after forming the second interlayer insulating film 44, a contact hole is formed, a relay electrode is buried in the contact hole, and an anode electrode 69 is formed thereon. Examples of the formation method include photolithography, vacuum deposition, sputtering, and pyrosol method, but a method by photolithography is more preferable. Further, the anode electrode 69 preferably has transparency such as colorless, transparent, colored, and translucent, and the material (anode material) constituting the anode electrode has a large work function and is conductive. It is preferable to use a material having excellent light transmission properties. Materials for such anode electrodes include ITO, tin oxide, antimony-containing tin oxide, aluminum-containing oxides such as zinc oxide, composite oxides such as a composite of indium oxide and zinc oxide, gold, platinum, silver , Copper or alloys containing these, and at least one of them can be used. Further, a conductive resin such as polythiophene or polypyrrole may be used as the material for the anode electrode.

  Subsequently, a hole transport layer 54 that is an organic layer is formed on the semiconductor element layer 4. First, the adhesion layer 50 is formed on the second interlayer insulating film 44, and an opening is formed in the pixel region above the anode electrode 69. Next, an insulating film 52 is formed on the adhesion layer 50, and an opening is further formed on the opening of the adhesion layer 50.

The insulating film 52 is a bank formed for partitioning the pixel electrode so as to selectively apply a hole transport material adjusting liquid 110 described later. The shape of the insulating film 52, that is, the aperture shape of the pixel may be any of a circle, an ellipse, and a square. However, since the ink composition ejected in the subsequent process has surface tension, It is preferable to be rounded. In addition, when the transparent electrode is made of ITO, the insulating film 52 is preferably formed by SiO _{2 in} order to improve adhesion to the transparent electrode. However, the insulating film 52 has heat resistance, liquid repellency, ink solvent resistance, base substrate. If it is excellent in adhesiveness, it is not particularly limited. For example, the material does not necessarily have a liquid repellency, for example, a fluororesin, and an organic resin such as a polyimide resin may be patterned to make the surface liquid repellent by CF ₄ plasma treatment or the like. It should be noted that it is sufficient if the insulating film 52 has a height of about 1 to 2 μm.

  Next, the wettability of the surface of the opening on the anode electrode 69 is improved by performing plasma treatment using oxygen plasma or the like. Thereafter, the hole transport layer 54 is formed by selectively applying droplets of the hole transport material adjusting liquid 110 from the ink jet head 100 to the region surrounded by the insulating film 52 by the ink jet printing method. At this time, the hole transport material adjustment liquid 110 tends to spread in the horizontal direction because of its high fluidity, but spreads outside the predetermined position because a step is formed so as to surround the applied position. Can be prevented.

  The hole transport layer 54 has a function of transporting holes injected from the anode electrode 69 to the light emitting layer 90 described later, and includes a dry process method such as a sputtering method and a vacuum deposition method, a spin coating method, and the like. , Casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating method, screen printing method, flexographic printing method, offset printing method, inkjet printing method, etc. The wet thin film formation method can be used, and the most suitable one is selected according to the physicochemical properties such as thermal stability and solubility of the hole transport material. Although not shown, a hole injection layer that takes holes from the anode may be formed between the anode and the hole transport layer 54 in order to improve the hole injection efficiency from the anode. Examples of the hole injection material constituting the hole injection layer include copper phthalocyanine and 4,4 ′, 4 ″ -tris (N, N-phenyl-3-methylphenylamino) triphenylamine. A material that is incompatible with the light emitting material 130 of the light emitting layer 90 described later can be used.

  Of the thin film formation methods described above, thin film formation by the ink jet printing method is particularly preferable. By using this ink jet printing method, high precision and high definition such as thinning, miniaturization of element size, and separate application of RGB patterns are possible. Printing is possible.

  For example, as a method for forming the hole transport layer 54 by the ink jet printing method, first, a hole transport material adjusting solution in which a hole transport material is dissolved in a solvent or dispersed in a dispersion medium is prepared. Examples of such hole transport materials include N, N′-bis (3-methylphenyl) -N, N′-diphenyl-benzidine, N, N′-bis (1-naphthyl) -N, N ′. -Known low molecular hole transport materials (monomers and oligomers) such as diphenyl-benzidine, 4,4 ', 4 "-tris (1-naphthylphenylamino) triphenylamine, and known low molecular hole transport materials In addition, compounds having improved solubility by introducing a substituent such as a long-chain alkyl group or a hydroxyl group as shown in the compound represented by the following chemical formula, and low molecular weight compounds can be used.

尚、インクジェット印刷法の具体的な内容は、本発明の要旨ではないため、省略する（かかる方式については、例えば、特開平２−１６７７５１号公報を参照）。

The specific contents of the ink jet printing method are not the gist of the present invention, and are therefore omitted (see, for example, Japanese Patent Laid-Open No. 2-167751 for such a method).

  When the hole transport material is dissolved in a solvent or dispersed in a dispersion medium, examples of the solvent or dispersion medium used include nitric acid, sulfuric acid, ammonia, hydrogen peroxide, water, carbon disulfide, carbon tetrachloride, and ethylene carbonate. Inorganic solvents, methyl ethyl ketone (MEK), acetone, diethyl ketone, methyl isobutyl ketone (MIBK), methyl isopropyl ketone (MIPK), ketone solvents such as cyclohexanone, methanol, ethanol, isopropanol, ethylene glycol, diethylene glycol (DEG), Alcohol solvents such as glycerin, diethyl ether, diisopropyl ether, 1,2-dimethoxyethane (DME), 1,4-dioxane, tetrahydrofuran (THF), tetrahydropyran (THP), anisole, diethylene Ether solvents such as recall dimethyl ether (diglyme), diethylene glycol ethyl ether (carbitol), cellosolv solvents such as methyl cellosolve, ethyl cellosolve, phenyl cellosolve, aliphatic hydrocarbon solvents such as hexane, pentane, heptane, cyclohexane, toluene , Aromatic hydrocarbon solvents such as xylene and benzene, aromatic heterocyclic compounds solvents such as pyridine, pyrazine, furan, pyrrole, thiophene and methylpyrrolidone, N, N-dimethylformamide (DMF), N, N-dimethyl Amide solvents such as acetamide (DMA), halogen compound solvents such as dichloromethane, chloroform, 1,2-dichloroethane, ester solvents such as ethyl acetate, methyl acetate, ethyl formate, dimethyl sulfoxide (DMSO) Sulfur compound solvents such as sulfolane, nitrile solvents such as acetonitrile, propionitrile, acrylonitrile, various organic solvents such as organic acid solvents such as formic acid, acetic acid, trichloroacetic acid, trifluoroacetic acid, or mixtures containing these A solvent or the like is preferred.

  The anode-side formation layer 1 produced by the above steps is dried in a reduced room temperature atmosphere for about 20 minutes, whereby a solvent contained in the hole transport material, for example, a solvent put in order to lower the viscosity and The high boiling point solvent evaporates, and the liquid hole transport layer 54 is converted into a semi-solid or solid thin layer.

(Formation layer on the cathode side)
Next, the layer formed on the cathode side will be described. FIG. 2 is a diagram for explaining a light emitting layer which is an organic layer formed on the cathode side which is the other electrode. According to this figure, the cathode side forming layer 2 has a cathode electrode 70 formed on a base material 61. The substrate 61 can employ a transparent glass plate. Although not shown, the cathode electrode 70 is configured by laminating a calcium layer and an aluminum layer. The thickness of the calcium layer is preferably in the range of 2 to 50 nm, for example. The aluminum layer reflects light emitted from the light emitting layer 90 to the substrate side, and is preferably composed of an Al film, an Ag film, a laminated film of Al and Ag, etc., and has a thickness of, for example, 100 A range of ˜2000 nm is preferred. The laminated film is formed thicker than a normal thickness in order to quickly cool the heat generated in the vicinity of the cathode electrode 70 when ultrasonic vibration is applied in a subsequent process.

Next, a lithium fluoride layer or a phthalocyanine layer (not shown) is formed on the cathode electrode 70. Since this layer is very thin, the influence on the light emission characteristics is small. In addition to having a function as a protective film for preventing permeation of moisture and metal substances, this layer may be used to supplement the function of the cathode electrode 70. Other than LiF) may be used. For example, it may be composed mainly of a fluoride of a metal element selected from Group 1A or Group 2A of the periodic table. More specifically, BaF ₂ , CaF ₂ , SrF ₂ , MgF _{2 and the} like are suitable in addition to NaF, KF, RbF, and CsF.

  In addition, this layer is preferably formed by, for example, a vapor deposition method, a sputtering method, a CVD method, or the like, and particularly preferably formed by a vapor deposition method in terms of preventing damage to the electrode due to heat. In the present embodiment, since the lithium fluoride layer is formed on the entire surface of the substrate, it is not necessary to specify the location where the lithium fluoride layer is formed even when the vapor deposition method is used.

  Next, a bank as a partition is formed on this layer. As a bank formation method, an acrylic material is applied using an inkjet head method to form a hemispherical bank 80. If necessary, a hydrophilization treatment may be performed on the bank forming portion by applying a mask. In addition, a hydrophilic treatment by plasma treatment is performed on the bank 80 and a region where a light emitting material 130 described later is applied. The bank 80 is a material that functions as a partition member, and is preferably a material that exhibits liquid repellency with respect to a liquid material. Liquid repellency by plasma treatment (Teflon (registered trademark)) is possible, and adhesion to an electrode is also possible. In addition, an insulating organic material such as polyimide that can be easily patterned by photolithography may be used. The bank 80 may be formed by a method such as a lithography method or a printing method other than the ink jet head method described above.

  Next, red, green and blue light emitting materials (130R, 130G, 130B) are applied in droplets from the inkjet head (120R, 120G, 120B), and then semi-dried or dried at about 50 ° C. under reduced pressure. The light emitting layer 90 is formed.

  As the luminescent material 130 constituting the luminescent layer 90, holes can be injected from the anode electrode 69 side when electrons are applied, and electrons can be injected from the cathode electrode 70 side. Materials that can be provided are preferred. Examples of the material of the light emitting material 130 include various low molecular light emitting materials and various high molecular light emitting materials as described below, and at least one of these can be used.

Examples of low-molecular light emitting materials include benzene compounds such as distyrylbenzene (DSB) and diaminodistyrylbenzene (DADSB), naphthalene compounds such as naphthalene and nile red, phenanthrene compounds such as phenanthrene, Chrysene, chrysene compounds such as 6-nitrochrysene, perylene, N, N′-bis (2,5-di-t-butylphenyl) -3,4,9,10-perylene-di-carboximide (BPPC) Perylene compounds such as coronene, anthracene compounds such as anthracene and bisstyrylanthracene, pyrene compounds such as pyrene, 4- (di-cyanomethylene) -2-methyl-6 Such as-(para-dimethylaminostyryl) -4H-pyran (DCM) Pyran compounds, acridine compounds such as acridine, stilbene compounds such as stilbene, thiophene compounds such as 2,5-dibenzoxazole thiophene, benzoxazole compounds such as benzoxazole, benzos such as benzimidazole Imidazole compounds, benzothiazole compounds such as 2,2 ′-(para-phenylenedivinylene) -bisbenzothiazole, bistyryl (1,4-diphenyl-1,3-butadiene), butadienes such as tetraphenylbutadiene Compounds, naphthalimide compounds such as naphthalimide, coumarin compounds such as coumarin, perinone compounds such as perinone, oxadiazole compounds such as oxadiazole, aldazine compounds, 1, 2, 3 , 4, Cyclopentadiene compounds such as 5-pentaphenyl-1,3-cyclopentadiene (PPCP), quinacridone compounds such as quinacridone and quinacridone red, pyridine compounds such as pyrrolopyridine and thiadiazolopyridine, 2,2 Spiro compounds such as', 7,7'-tetraphenyl-9,9'-spirobifluorene, phthalocyanine (H ₂ Pc), metal or metal-free phthalocyanine compounds such as copper phthalocyanine, florene such as fluorene Compounds (8-hydroxyquinoline) aluminum (Alq ₃ ), tris (4-methyl-8quinolinolate) aluminum (III) (Almq ₃ ), (8-hydroxyquinoline) zinc (Znq ₂ ), (1,10- Phenanthroline) -tris- (4,4,4-trifluoro 1- (2-thienyl) - butane-1,3-Jioneto) europium (III) (Eu (TTA) 3 (phen)), factory scan (2-phenylpyridine) iridium (Ir (ppy) _3), (2 , 3,7,8,12,13,17,18-octaethyl-21H, 23H-porphine) platinum (II) and various metal complexes are suitable.

  On the other hand, examples of the polymer luminescent material include polyacetylene compounds such as trans-type polyacetylene, cis-type polyacetylene, poly (di-phenylacetylene) (PDPA), poly (alkyl, phenylacetylene) (PAPA), (Para-phenvinylene) (PPV), poly (2,5-dialkoxy-para-phenylenevinylene) (RO-PPV), cyano-substituted-poly (para-phenvinylene) (CN-PPV), poly (2 Polyparaphenylene vinylene compounds such as dimethyloctylsilyl-para-phenylene vinylene (DMOS-PPV), poly (2-methoxy, 5- (2'-ethylhexoxy) -para-phenylene vinylene) (MEH-PPV) , Poly (3-alkylthiophene) (PAT), poly (oxypro Polythiophene compounds such as (len) triol (POPT), poly (9,9-dialkylfluorene) (PDAF), α, ω-bis [N, N′-di (methylphenyl) aminophenyl] -poly [9, 9-bis (2-ethylhexyl) fluorene-2,7-diyl] (PF2 / 6am4), poly (9,9-dioctyl-2,7-divinylenefluorenyl-ortho-co (anthracene-9,10-) Polyfluorene compounds such as diyl), poly (para-phenylene) (PPP), polyparaphenylene compounds such as poly (1,5-dialkoxy-para-phenylene) (RO-PPP), poly (N -Polycarbazole compounds such as vinylcarbazole) (PVK), poly (methylphenylsilane) (PMPS), poly (naphthylphenyl) Run) (PnPs), polysilane-based compounds such as poly (biphenylyl phenyl silane) (pBPS) and the like.

  Note that it is known that the light emitting material of low molecular weight improves the light emission efficiency of the light emitting layer 90 because the dense light emitting layer 90 is obtained. In addition, it is known that a light emitting layer 90 can be easily formed by various coating methods such as an ink jet printing method because a polymer light emitting material can be dissolved in a solvent relatively easily. Furthermore, by combining a low-molecular light-emitting material and a high-molecular light-emitting material, the light-emitting layer 90 having both the effect of using a low-molecular light-emitting material and a high-molecular light-emitting material, that is, a dense and excellent luminous efficiency It is known that it can be easily formed by various coating methods such as an ink jet printing method.

  As the solvent or dispersion medium for dissolving or dispersing the light-emitting material, the same solvent or dispersion medium used for forming the hole transport material can be used, but a component that reacts with or corrodes the cathode, for example, The solvent or the dispersion medium may be selected so as not to contain nitric acid or water that corrodes the calcium layer or the lithium fluoride layer.

  Although the thickness (average) of the light emitting layer 90 is not specifically limited, About 10-150 nm is preferable, More preferably, it is about 50-100 nm. When the layer thickness is in the above-described range, holes and electrons recombine efficiently, so that the light emission efficiency of the light emitting layer 90 can be further improved.

  Next, the light emitting layer 90 is dried at 50 ° C. to 60 ° C. Here, when the light emitting layer 90 is fixed, for example, by applying ultrasonic vibration by the ultrasonic vibrator 150A from the lower side of the base material 61, the solvent in the light emitting layer 90 is misted and removed, and a positive electrode described later is used. In order to improve the adhesion to the hole transport layer 54, the surface of the light emitting layer 90 can be uneven.

(Joining process)
Subsequently, the anode side and the cathode side respectively manufactured by the above method are opposed to each other, and the hole transport layer 54 and the light emitting layer 90 are bonded and bonded as the respective interfaces. FIG. 3 is a diagram for explaining a bonding process between the anode side and the cathode side. First, before being joined in this joining step, in the bonding step (not shown), the anode side forming layer 1 and the cathode side forming layer 2 are positioned by an appropriate alignment method with their interfaces facing each other. The anode side forming layer 1 and the cathode side forming layer 2 are bonded together so that the interfaces thereof are in close contact with each other. Next, the anode side forming layer 1 and the cathode side forming layer 2 which are brought into close contact with each other are pressed, and vibration is applied. Specifically, the bonded anode-side forming layer 1 and cathode-side forming layer 2 are hidden between a plurality of vibrating pressure rollers 140.

  Here, an outline of means for applying pressure and vibration will be described. The pressure roller 140 is composed of one pressure roller 140A in contact with the base material 61 of the cathode side forming layer 2 and the other pressure roller 140B in contact with the glass substrate 10 of the anode side forming layer 1. A line connecting the rotation centers of the pressure rollers (140A, 140B) is configured to be orthogonal to a moving line through which the bonded anode side forming layer 1 and cathode side forming layer 2 are sent. The pressure roller 140 is made of an elastic member such as rubber, for example, and presses against a member that dives between the pressure rollers 140 by this elastic action.

In addition, an ultrasonic vibrator 150 is provided to apply vibration to a member that is dive between the pressure rollers 140. Specifically, one ultrasonic vibrator 150A applies vibration through one pressure roller 140A, and the other ultrasonic vibrator 150B applies vibration through the other pressure roller 140B. These ultrasonic transducers (150A, 150B) are controlled by a controller (not shown), and are configured to generate different frequencies and amplitudes and to add predetermined modulations such as frequency modulation and amplitude modulation. ing. The pressing force is adjusted to be 0.01 kgf / cm ² or more and 0.5 kgf / cm ² or less, and the frequency is set to be 100 kHz or more and 200 kHz or less.

  By the method described above, the cathode-side bank 80 and the anode-side insulating film 52 are first pressed at the interface between the anode-side forming layer 1 and the cathode-side forming layer 2, and then the organic layers are bonded together. In addition to reducing the excessive pressing force on the interface between the two formation layers by applying vibration, the molecules near the interface are resonated, and the energy of the movement due to the resonance is converted into thermal energy, and only in the vicinity of both interfaces. Is locally heated. Due to the heat generated in the vicinity of both interfaces in this way, different layers near the interface become gel-like and mixed and dispersed at the molecular level, and after the heat is shut off, the respective interfaces are cooled and solidified. Turn into. When both the hole transport layer 54 and the light emitting layer 90 are solidified, both interfaces are joined by a short-time pulse excitation, but either one or both are in a semi-solid state. In this case, by modulating the amplitude of vibration between 0.1 μm and 50 μm, both interfaces are mixed and bonded by a short time excitation of about 2 to 3 seconds. Thus, the organic light emitting element 5 can be manufactured by bonding the anode side forming layer 1 and the cathode side forming layer 2 and then mixing and bonding them.

(Application examples of organic light emitting devices)
Further, the organic light emitting element 5 is used in various electronic devices as an electronic device called an organic EL panel. For example, the present invention can be applied to various electronic devices such as mobile personal computers, mobile phones, and digital still cameras. FIG. 4 is a perspective view illustrating a configuration of a mobile personal computer. In FIG. 4, a personal computer 180 includes a main body 184 having a keyboard 182 and a display unit 186 composed of the organic EL panel described above.

  FIG. 5 is a perspective view of the mobile phone. In FIG. 5, the mobile phone 200 is provided with a display panel 208 made up of the above-described organic EL panel, in addition to a plurality of operation buttons 202, as well as an earpiece 206 and a mouthpiece 204. FIG. 6 is a perspective view showing the configuration of the digital still camera 300. Note that the connection with an external device is also shown in a simplified manner. An ordinary camera sensitizes a film with a light image of a subject, whereas a digital still camera 300 generates an image signal by photoelectrically converting a light image of a subject with an image sensor such as a CCD (Charge coupled device). It is.

  Here, on the back surface of the case 302 in the digital still camera 300, a display panel 304 made of the organic EL device of the present invention is provided, and is configured to perform display based on an imaging signal from the CCD. For this reason, the display panel 304 functions as a finder for displaying a subject. A light receiving unit 306 including an optical lens, a CCD, and the like is provided on the observation side 302 (the back side in the drawing).

  Here, when the photographer confirms the subject image displayed on the display panel 304 and presses the shutter button 308, the CCD image pickup signal at that time is transferred to and stored in the memory of the circuit board 310. In the digital still camera 300, a video signal output terminal 312 and an input / output terminal 314 for data communication are provided on the side surface of the case 302.

  As shown in the figure, a television monitor 430 is connected to the video signal output terminal 312 and a personal computer 440 is connected to the input / output terminal 314 for data communication, as necessary. Further, the imaging signal stored in the memory of the circuit board 310 is output to the television monitor 430 or the personal computer 440 by a predetermined operation.

  In addition to the personal computer shown in FIG. 4, the mobile phone shown in FIG. 5, and the digital still camera shown in FIG. Examples include direct-view video tape recorders, car navigation devices, pagers, electronic notebooks, calculators, word processors, workstations, videophones, POS terminals, and devices equipped with touch panels.

According to Embodiment 1 described above, there exist the following effects.
(1) When drying the light emitting layer 90, by applying ultrasonic vibration by the ultrasonic vibrator 150A, the solvent in the light emitting layer 90 is misted and removed, so that the light emission efficiency is improved. Furthermore, since the contact with the pressure roller 140 is a point contact, only the necessary pixel columns can be selectively pressed, and in addition, the strain stress and air inside the anode side forming layer 1 and the cathode side forming layer 2 Is eliminated.

(Embodiment 2)
Next, Embodiment 2 of the present invention will be described with reference to FIG. In the following description, parts that are the same as those already described are given the same reference numerals and description thereof is omitted. FIG. 7 is a configuration diagram showing an outline of the organic light emitting device of the second embodiment. In Embodiment 1 described above, a transparent glass plate is used as the base material 61 of the cathode side forming layer 2, but in Embodiment 2, a polyester film 15A is used. In addition, the glass substrate 10 of the anode side forming layer 1 is separated from the anode side forming layer 1 after the peeling layer 20 is peeled off after the bonding step and the bonding step with the cathode side forming layer 2.

Specifically, when the pressure roller 140 and the ultrasonic vibrator 150 are pressed to apply vibration to join the anode side forming layer 1 and the cathode side forming layer 2, they are arranged below the glass substrate 10. A XeCl excimer laser is irradiated to the entire surface of the glass substrate 10 from a XeCl excimer laser oscillation device (not shown). The irradiation conditions in this case are an energy density of 160 mJ / cm ² and an irradiation time of 20 nsec. By this irradiation, hydrogen is released from the release layer 20 to increase the pressure in the release layer 20, the release layer 20 is destroyed, and the glass substrate 10 is easily peeled off from the base protective film 30. In addition, ultrasonic vibration from the ultrasonic transducer 150 is applied, and the peeling layer 20 is peeled off from the anode side forming layer 1 together with the glass substrate 10 and completely separated. Subsequently, the polyester film 15B is fixed to the surface of the base protective film 30 using an adhesive such as an ultraviolet curable resin.

According to the second embodiment as described above, in addition to the effect (1) described in the first embodiment, the following effects can be obtained.
(2) Since both end faces of the organic light emitting element 5 are composed of the polyester film 15, distortion caused when the organic light emitting element 5 is bent or pulled is caused by the adhesive of the polyester film 15 and an ultraviolet curable resin or the like. The layer absorbs. Accordingly, it is possible to provide the organic light emitting device 5 that is reinforced against physical deformation applied from the outside.

(Embodiment 3)
Next, Embodiment 3 of the present invention will be described with reference to FIG. FIG. 8 is a diagram showing an outline of the configuration of the organic light emitting device of the third embodiment. In the first embodiment described above, the interface of the light emitting layer 90 and the interface of the hole transport layer 54 both formed by the wet film forming method are used as the bonding surfaces. However, in the third embodiment, both are performed by the dry film forming method. The formed interface of the electron injection layer 74 and the interface of the electron transport layer 76 are used as a bonding surface.

  That is, as the anode side formation layer 1, the semiconductor element layer 4, the insulating layer 52, and the bank 80 are sequentially stacked on the glass substrate 10. Furthermore, in addition to forming the TFT 66, the anode electrode 69, the hole transport layer 54, and the light emitting layer 90 in each layer in the same manner as in Embodiment 1, the electron transport layer 76 corresponding to the light emitting layer 90 is formed. It is formed so as to protrude slightly from the bank 80. Further, after forming the cathode electrode 70 on the substrate 61 as the cathode side forming layer 2, the electron injection layer 74 is formed on the cathode electrode 70 corresponding to the light emitting layer 90 of the anode side forming layer 1.

  Subsequently, the interface of the formed electron injection layer 74 and the interface of the electron transport layer 76 are opposed to each other by the same method as in the first embodiment, and after being properly aligned, they are bonded together and subjected to pressing and vibration. Bond each interface.

  The electron injection layer 74 has a function of taking electrons from the cathode 70 in order to improve the efficiency of electron injection from the cathode 70. The electron transport layer 76 has a function of transporting electrons injected from the cathode 70 to the light emitting layer 90.

  Here, the structural material of the electron injection layer 74 will be described. The electron injection layer 74 is preferably composed of an organic compound or an inorganic compound. In particular, it is known that an organic light-emitting device that is superior in terms of the injecting property and durability of electrons from the cathode 70 can be obtained by using an inorganic compound.

Among these, as the organic compound, 8-hydroxyquinoline, oxadiazole, or a derivative thereof such as a metal chelate oxinoid compound containing 8-hydroxyquinoline is preferable. Moreover, as an inorganic compound, an insulator or a semiconductor is preferable. In particular, it is known that the electron injection layer 74 is made of an insulator or a semiconductor, thereby effectively preventing current leakage and further improving the electron injection property. Such insulators include at least the group consisting of alkali metal chalcogenides (oxides, sulfides, selenides, tellurides), alkaline earth metal chalcogenides, alkali metal halides and alkaline earth metal halides. It is preferred that one metal compound is selected. In particular, it is known that the electron injection efficiency is further improved by forming the electron injection layer 74 with an alkali metal chalcogenide or the like. As such an alkali metal chalcogenide, for example, Li ₂ O, LiO, Na ₂ S, Na ₂ Se and NaO are preferable.
Further, as the alkaline earth metal chalcogenide, for example, CaO, BaO, SrO, BeO, BaS, MgO, and CaSe are preferable. Further, as the alkali metal halide, for example, CsF, LiF, NaF, KF, LiCl, KCl, and NaCl are preferable.

In addition, as the alkaline earth metal halide, for example, fluorides such as CaF ₂ , BaF ₂ , SrF ₂ , MgF ₂ and BeF ₂ and halides other than fluorides are preferable. May be combined. The semiconductor constituting the electron injection layer 74 includes an oxide containing at least one element of Ba, Ca, Sr, Yb, Al, Ga, In, Li, Na, Cd, Mg, Si, Ta, Sb, and Zn. An oxide, nitride, oxynitride or the like alone or in combination of two or more is preferable.

  The inorganic compound constituting the electron injection layer 74 is preferably a microcrystalline or amorphous insulating thin film. If the electron injection layer 74 is composed of these insulating thin films, a more uniform thin film is formed, so that pixel defects such as dark spots can be reduced. As such an inorganic compound, the aforementioned alkali metal chalcogenides, alkaline earth metal chalcogenides, alkali metal halides, alkaline earth metal halides, and the like are preferable.

  The structure of the electron injection layer 74 is not particularly limited, and may be, for example, a single layer structure, or a two-layer structure or a three-layer structure. Further, the thickness of the electron injection layer 74 is not particularly limited, but is preferably set to a value in the range of 0.1 nm to 1000 nm, for example. The reason for this is that when the thickness of the electron injection layer 74 is less than 0.1 nm, the electron injection property is lowered or the mechanical strength is lowered. On the other hand, the thickness of the electron injection layer 74 is 1000 nm. This is because the resistance increases, the high-speed response of the organic light-emitting element is reduced, and a long time is required for film formation. Furthermore, in order to avoid these defects reliably, the thickness of the electron injection layer 74 is more preferably in the range of 0.5 to 100 nm, and ideally in the range of 1 to 50 nm.

  Next, a method for forming the electron injection layer 74 will be described. As described above, the electron injection layer 74 is formed by a dry film forming method. The dry film formation method is not particularly limited as long as it can be formed as a thin film layer having a uniform film thickness. For example, a vapor deposition method, a spin coating method, a casting method, an LB method, a sputtering method, or the like is used. Can be adopted.

Next, the constituent material of the electron transport layer 76 will be described. Examples of the constituent material of the electron transport layer 76 include 1,3,5-tris [(3-phenyl-6-tri-fluoromethyl) quinoxalin-2-yl] benzene (TPQ1), 1,3,5- Benzene compounds (starburst compounds) such as tris [{3- (4-t-butylphenyl) -6-trisfluoromethyl} quinoxalin-2-yl] benzene (TPQ2), naphthalene compounds such as naphthalene Phenanthrene compounds such as phenanthrene, chrysene compounds such as chrysene, perylene compounds such as perylene, anthracene compounds such as anthracene, pyrene compounds such as pyrene, acridine compounds such as acridine, stilbene Stilbene compounds such as thiophene compounds such as BBOT, Butadiene compounds such as tadiene, coumarin compounds such as coumarin, quinoline compounds such as quinoline, bistyryl compounds such as bistyryl, pyrazine compounds such as pyrazine and distyrylpyrazine, quinoxaline compounds such as quinoxaline Compounds, benzoquinone, benzoquinone compounds such as 2,5-diphenyl-para-benzoquinone, naphthoquinone compounds such as naphthoquinone, anthraquinone compounds such as anthraquinone, oxadiazole, 2- (4-biphenylyl) -5 Oxadiazole compounds such as (4-t-butylphenyl) -1,3,4-oxadiazole (PBD), BMD, BND, BDD, BAPD, triazole, 3,4,5-triphenyl-1 Tones like 2,4-triazole Azole compound, oxazole compound, anthrone compound such as anthrone, fluorenone, fluorenone compound such as 1,3,8-trinitro-fluorenone (TNF), diphenoquinone, diphenoquinone compound such as MBDQ, stilbenequinone, Stilbenequinone compounds such as MBSQ, anthraquinodimethane compounds, thiopyrandioxide compounds, fluorenylidenemethane compounds, diphenyldicyanoethylene compounds, fluorene compounds such as fluorene, phthalocyanine, copper phthalocyanine, iron Metals such as phthalocyanine or metal-free phthalocyanine compounds, (8-hydroxyquinoline) aluminum (Alq ₃ ), complexes such as benzoxazole and benzothiazole as ligands A seed metal complex or the like is preferable.
The electron transport layer 76 is formed by a dry film forming method using at least one of the above compounds.

  The thickness of the electron transport layer 76 is not particularly limited, but is preferably about 1 to 100 nm, and ideally about 20 to 50 nm. If the thickness of the electron transport layer 76 is too thin, a pinhole may be generated and an electrical short circuit may occur. On the other hand, if the thickness is too thick, the resistance value may be increased.

According to the third embodiment as described above, the following effects can be obtained.
(3) Since the electron transport layer 76 slightly protrudes from the bank 80, the interface can be easily joined at the time of joining to the cathode side forming layer 2, and a strain escape field at the time of joining can be formed.

(Embodiment 4)
Next, Embodiment 4 of the present invention will be described with reference to FIG. FIG. 9 is a diagram showing an outline of the configuration of the organic light emitting device of the fourth embodiment. In the first embodiment described above, the interface of the light emitting layer 90 and the interface of the hole transport layer 54 both formed by the wet film forming method are used as the bonding surfaces. In the fourth embodiment, the interface is formed by the wet film forming method. The interface between the light emitting layer 90 thus formed and the interface of the electron transport layer 76 formed by the dry film forming method are used as a bonding surface.

  That is, as the anode side formation layer 1, the semiconductor element layer 4, the insulating layer 52, and the bank 80 are sequentially stacked on the glass substrate 10. Further, the TFT 66, the anode electrode 69, the hole transport layer 54, and the light emitting layer 90 are formed in each layer by the same method as in the first embodiment. Further, after forming the cathode electrode 70 on the substrate 61 as the cathode side forming layer 2, the electron injection layer 74 is formed on the cathode electrode 70 corresponding to the light emitting layer 90 of the anode side forming layer 1. Further, an electron transport layer 76 is formed on the electron injection layer 74.

  Subsequently, the interface of the light emitting layer 90 and the interface of the electron transport layer 76 formed in the same manner as in Embodiment 1 are opposed to each other, and after being properly aligned, they are bonded together and subjected to pressing and vibration. Join each interface.

  Here, of the interface of the light emitting layer 90 and the interface of the electron transport layer 76, the area of one interface is preferably smaller than the area of the other interface joined to this one interface.

According to Embodiment 4 as described above, the following effects are obtained.
(4) Since the areas of the interfaces to be joined are different, in addition to being able to absorb alignment errors, misalignment due to heat generated by ultrasonic vibration can also be absorbed.

As mentioned above, although this invention was demonstrated based on Embodiment 1, Embodiment 2, Embodiment 3, and Embodiment 4 which illustrated, this invention is not limited to these, The modification as described below is also included. Can be assumed.
(1) The production method of the present invention is not limited to the bonding at the interface between the two layers described in the above embodiment, but includes the cathode electrode 70, the electron injection layer 74, the electron transport layer 76, the light emitting layer 90, and the hole transport layer. 54, the hole injection layer, the anode electrode 69, and the like may be joined between adjacent layers, and may also be applied to joining of the same organic layers. Further, the bank 80 may be provided on only one of the bonding layers, or may be formed on both of the bonding layers.
(2) The heating method in the vicinity of the interface is not limited to ultrasonic vibration, and a dielectric heating method using high frequency can also be employed.

The figure explaining the positive hole transport layer formed in the anode side which concerns on Embodiment 1 of this invention. FIG. 3 illustrates a light emitting layer formed on the cathode side according to Embodiment 1. FIG. 3 is a diagram illustrating a bonding process between the anode side and the cathode side according to the first embodiment. 1 is a perspective view illustrating a configuration of a mobile personal computer according to Embodiment 1. FIG. 1 is a perspective view of a mobile phone according to Embodiment 1. FIG. 1 is a perspective view illustrating a configuration of a digital still camera according to Embodiment 1. FIG. FIG. 3 is a configuration diagram illustrating an outline of an organic light emitting device according to a second embodiment. FIG. 4 is a diagram illustrating a schematic configuration of an organic light emitting device according to a third embodiment. FIG. 5 is a diagram illustrating a schematic configuration of an organic light emitting device according to a fourth embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Anode side forming layer, 2 ... Cathode side forming layer, 4 ... Semiconductor element layer, 5 ... Organic light emitting element, 10 ... Glass substrate, 15 ... Polyester film, 20 ... Release layer, 30 ... Base protective film, 40 ... Gate Insulating film, 42 ... first interlayer insulating film, 44 ... second interlayer insulating film, 50 ... adhesion layer, 52 ... insulating film, 54 ... hole transport layer, 61 ... base material, 62 ... polysilicon film, 64 ... gate Electrode, 65 ... Source / drain region, 66 ... TFT, 67 ... Source / drain electrode, 69 ... Anode electrode, 70 ... Cathode electrode, 74 ... Electron injection layer, 76 ... Electron transport layer, 80 ... Bank, 90 ... Light emitting layer DESCRIPTION OF SYMBOLS 100 ... Inkjet head 110 ... Hole transport material adjustment liquid 130 ... Luminescent material 140 ... Pressure roller 150 ... Ultrasonic vibrator 180 ... Personal computer 182 ... Keyboard 184 ... Body part 18 DESCRIPTION OF SYMBOLS ... Display unit, 200 ... Mobile phone, 202 ... Operation button, 204 ... Mouthpiece, 206 ... Earpiece, 208 ... Display panel, 300 ... Digital still camera, 302 ... Case, 304 ... Display panel, 306 ... Light receiving unit, 308 ... Shutter button, 310 ... Circuit board, 312 ... Video signal output terminal, 314 ... Input / output terminal, 430 ... Television monitor, 440 ... Personal computer.

Claims (21)

An organic light emitting device comprising: an anode layer; a cathode layer; and an organic layer having at least a light emitting layer laminated between the two electrode layers and exhibiting a luminescent color,
At least one of the organic layers, the step of bonding the interface of one layer and the interface of the other layer facing each other;
Pressing the bonded interfaces together and locally heating the two interfaces to join the two layers together. In the manufacturing method of the organic light emitting element of Claim 1,
A method of manufacturing an organic light-emitting element, wherein the pressed interfaces are vibrated and heated by heat generated in the vicinity of the interfaces. In the manufacturing method of the organic light emitting element of Claim 2,
The method of manufacturing an organic light emitting device, wherein the vibration is ultrasonic vibration. In the manufacturing method of the organic light emitting element of Claims 2 thru | or 3,
A method of manufacturing an organic light emitting device, wherein the vibration is subjected to predetermined modulation. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 4,
The one layer is the cathode layer,
Said other layer is said light emitting layer, The manufacturing method of the organic light emitting element characterized by the above-mentioned. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 4,
The one layer is the light emitting layer,
The method for producing an organic light-emitting element, wherein the other layer is a hole transport layer that transports holes to the light-emitting layer. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 4,
The one layer is the anode layer,
Said other layer is said hole transport layer, The manufacturing method of the organic light emitting element characterized by the above-mentioned. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 4,
The one layer is the hole transport layer,
Said other layer is a hole injection layer which takes in a hole from said anode, The manufacturing method of the organic light emitting element characterized by the above-mentioned. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 4,
The method for manufacturing an organic light-emitting element, wherein the one layer and the other layer are formed of the same material. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 4,
Of the two layers, at least one of the layers is a layer formed by a dry film forming method. In the manufacturing method of the organic light emitting element of Claim 10,
The one layer is the cathode layer,
The other layer is an electron transporting layer that transports electrons to the light emitting layer. In the manufacturing method of the organic light emitting element of Claim 10,
The one layer is an electron injection layer that takes in electrons from the cathode, and
Said other layer is said electron transport layer, The manufacturing method of the organic light emitting element characterized by the above-mentioned. In the manufacturing method of the organic light emitting element of Claim 10,
The one layer is the light emitting layer,
Said other layer is said electron transport layer, The manufacturing method of the organic light emitting element characterized by the above-mentioned. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 13,
The method of manufacturing an organic light-emitting element, wherein the interface of the one layer and the interface of the other layer have different areas. In the manufacturing method of the organic light emitting element according to any one of claims 1 to 14,
A partition for separating the organic layer is formed in either one of the one layer or the other layer, and the method for manufacturing an organic light emitting element is provided. In the manufacturing method of the organic light emitting element according to any one of claims 1 to 14,
A partition for separating the organic layer is formed in both of the one layer and the other layer, and the method for manufacturing an organic light-emitting element is provided. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 16,
A step of vibrating at least one of the two interfaces to add irregularities to the surface of the interface;
A method for producing an organic light emitting device, comprising the step of attaching the two interfaces before the step of bonding the two interfaces. In the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 17,
Forming the anode layer on a substrate;
Forming a release layer for peeling the anode layer from the substrate between the substrate and the anode layer;
And a step of peeling the substrate and the anode layer with the peeling layer by the vibration.   The organic light emitting element manufactured by the manufacturing method of the organic light emitting element of any one of Claims 1 thru | or 18.   An electronic device comprising the organic light-emitting element according to claim 19. An electronic device comprising the electronic device according to claim 20.

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