JP2006269448A - LED - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an LED having a simple configuration that eliminates the thermal influence due to eutectic bonding of LED chips and can suppress the occurrence of color unevenness.
SOLUTION: A flat substrate made of a ceramic or Si substrate, two electrode portions by a conductive pattern formed on the surface of the substrate, and eutectic bonding on a chip mounting portion of one electrode portion, and the surface thereof is An LED chip connected to the bonding part of the other electrode part, and the LED chip is surrounded on the substrate surface from one side and formed on the substrate surface so that the LED chip is located near the focal position A concave reflecting surface made of a hyperboloid and a resin mold part made of a transparent resin material filled inside the reflecting surface, and the surface of the electrode part and / or the reflecting surface is metallized. The side-view type LED 10 is configured such that light from the LED chip is reflected by the reflecting surface and emitted toward the other side along the substrate surface. .
[Selection] Figure 1

Description

  The present invention relates to a side view type LED in which light from an LED chip is reflected by a concave reflecting surface and emitted to the outside.

Conventionally, such an LED is configured as shown in FIG. 6, for example.
That is, in FIG. 6, LED 1 is a so-called side view type LED lamp, which includes a pair of lead frames 2 and 3, an LED chip 4 mounted on a chip mounting portion 2 a of one lead frame 2, and these The housing 5 is integrally formed so as to surround the lead frames 2 and 3 and the LED chip 4, and the mold resin 6 is formed inside the housing 5.

  The lead frames 2 and 3 are formed by applying silver plating to the surface of a conductive material such as copper so that each of the lead frames 2 and 3 has a chip mounting portion 2a and a bonding portion 3a at the ends, and the other end is a housing. The connection portions 2b and 3b for surface mounting are formed by wrapping around from the side surface of 5 to the lower surface.

  The LED chip 4 is bonded to the chip mounting portion 2a at the tip of one lead frame 2 by die bonding or the like, and the electrode provided on the upper surface thereof is bonded to the tip of the other adjacent lead frame 3. 3a is electrically connected by a bonding wire 4a.

  The housing 5 is made of a light reflecting resin material, and is integrally formed with the lead frames 2 and 3 by insert molding or the like. By filling the inside with the mold resin 6, the extraction efficiency of the light emitted from the LED chip 4 is improved based on the difference in refractive index from the surrounding atmosphere.

  The mold resin 6 may be mixed with a resin containing a phosphor that is excited by the wavelength of light from the LED chip 4. As a result, the mixed color light of the light from the LED chip 4 and the excitation light by the phosphor mixed in the mold resin 6 is emitted to the outside.

  According to the LED 1 having such a configuration, when a driving voltage is applied to the LED chip 4 through the pair of lead frames 2 and 3, the LED chip 4 emits light, and this light passes through the mold resin 6 to the outside. It will be emitted.

Incidentally, the LED 1 having such a configuration has the following problems.
That is, it is necessary to mount the LED chip 4 on the lead frames 2 and 3 that are insert-molded to the housing 5. Therefore, when the LED chip 4 is die-bonded to the chip mounting portion 2a of the lead frame 2 by eutectic bonding such as AuSn, the housing 5 is necessary for the eutectic bonding, for example, 300 in this die bonding process. In addition to being exposed to a temperature equal to or higher than 0 ° C., when such an LED 1 is surface-mounted, it is also exposed to a high temperature in the reflow process. Therefore, the LED chip and the housing are thermally affected by eutectic bonding or the like.

On the other hand, the material of the housing 5 includes resins such as LCP and PEEK that can withstand such high temperatures.
However, such resins as LCP and PEEK are special resins, and the molding conditions such as molding temperature and molding pressure are different from the molding conditions of general resin materials, which increases the equipment cost. End up.

  Further, in order to reflect the light emitted from the LED chip 4 in the light irradiation direction, even if it is desired to use a resin such as PPA or nylon 9T having a high reflectance in the visible light region, such a resin having a high reflectance is used. In general, the heat-resistant temperature is relatively low, and the heat distortion temperature is exceeded at the above-described high temperature of, for example, 300 ° C. or more. Therefore, it is difficult to use these highly reflective resins as the material of the housing 5.

On the other hand, the heat-resistant temperature can be increased by mixing a so-called filler into the resin material of the housing 5.
However, the reflectance of the resin material is reduced, and the temperature, injection speed, injection pressure, etc., which are molding conditions, are difficult to adjust as compared with a normal resin material, and the fluidity of the resin material is low. Therefore, it is not suitable for a housing of a side view type LED that is particularly small and requires thin wall molding.

  In addition, the irradiance received by the resin material of the housing increases with the miniaturization and shortening of the wavelength of the LED, so that a decrease in reflectivity due to light deterioration occurs, and this is a change over time compared to long wavelength LEDs. As a result, the output drop becomes remarkable.

Furthermore, by using a resin material containing a phosphor or a scattering agent as a resin material of the housing, a white LED or an LED having a light scattering effect has been created, but an epoxy resin or a silicone resin is used as a sealing resin. In this case, it is difficult to control the sedimentation and diffusion of these phosphors and scattering agents in the resin, and the phosphors and scattering agents will be unevenly distributed in the resin.
Due to the non-uniform distribution of the phosphor and the diffusing agent, the excitation light and the scattered light from the phosphor due to the light from the LED chip also become non-uniform, resulting in color unevenness.

  On the other hand, by using an anti-settling agent, it may be possible to prevent such non-uniform distribution of the phosphor and the diffusing agent. However, if such an anti-settling agent is mixed in the resin material of the housing. The adhesion between the housing and the lead frame is reduced, and the moisture resistance and reflow resistance are impaired.

  In view of the above, an object of the present invention is to provide an LED having a simple configuration that eliminates the thermal effects of eutectic bonding of LED chips and can suppress the occurrence of color unevenness.

  According to the present invention, there is provided a flat substrate made of a ceramic or Si substrate, two electrode portions formed of a conductive pattern formed on the surface of the substrate, and a eutectic crystal on a chip mounting portion of one electrode portion. The LED chip that is bonded and the surface of which is connected to the bonding portion of the other electrode part, and the LED chip is surrounded from one side on the substrate surface, and the LED chip is positioned near the focal position. A concave reflecting surface made of a hyperboloid formed on the surface of the substrate and a resin mold part made of a transparent resin material filled inside the reflecting surface, the surface of the electrode part and / or the reflecting surface The side viewer is characterized in that the light is emitted from the LED chip by the reflecting surface and emitted toward the other side along the substrate surface. The flop of LED, is achieved.

  The LED according to the present invention preferably includes a phosphor layer on the inner surface of the reflecting surface.

  In the LED according to the present invention, the phosphor layer is preferably configured by applying a dot-like phosphor on the reflection surface.

  The LED according to the present invention preferably includes a light shielding portion provided on the substrate surface on the other side of the LED.

  In the LED according to the present invention, preferably, the resin mold part is formed in an arc shape centering on a focal point of a reverse hyperboloid which is a pair of the reflection surfaces on the other side.

  In the LED according to the present invention, preferably, the resin mold portion is multilayered.

  In the LED according to the present invention, the resin mold part or the phosphor layer preferably contains a scattering agent.

  In the LED according to the present invention, preferably, the resin mold part has a particle diameter equal to or smaller than a half of a wavelength of light emitted from the LED chip or a wavelength of excitation light from the phosphor, and a refractive index higher than a refractive index of the resin mold part. Containing particles with a rate.

  According to the above configuration, light is emitted from the LED chip when a drive current flows through the LED chip. Thereby, the light emitted from the LED chip is emitted directly to the outside through the resin mold part or reflected by the reflecting surface.

  Since the reflecting surface is formed in a hyperboloid shape and the LED chip is arranged near the focal point of the hyperboloid, the light incident on the reflecting surface from the LED chip is paired with the hyperboloid surface. The light is reflected and emitted toward the outside so as to diverge from the focal point of the hyperboloid.

  In this case, since the substrate is made of a ceramic or Si substrate, the substrate has good heat resistance. When mounting the LED chip on the chip mounting portion of one electrode portion, for example, Au- Even when eutectic bonding such as Sn eutectic is performed, the substrate is not affected by heat at a temperature necessary for performing eutectic bonding (for example, 300 ° C.), and eutectic bonding is surely performed. It is possible to do.

  In addition, since the electrode part and / or the reflection surface is metallized such as an Ag—Nd alloy or an Ag—Bi alloy, a sufficiently high reflectance can be obtained, and the reflectance can be lowered due to migration or the like. Since a high reflectance can be obtained over a long period of time, the efficiency of extracting light emitted to the outside due to aging does not decrease.

In the case where a phosphor layer is provided on the inner surface of the reflecting surface, a transparent resin material mixed with phosphor particles is applied to the inner surface of the reflecting surface to form a predetermined thickness by printing, etc. Therefore, a non-uniform distribution due to sedimentation or the like can be eliminated, and a uniform phosphor concentration can be easily realized.
Thereby, since the luminous intensity of the excitation light by the phosphor becomes uniform, the occurrence of color unevenness can be suppressed by color mixture with the light from the LED chip as a whole.
Further, since it is not necessary to use an anti-settling agent for uniform dispersion of the phosphor, the adhesion between the phosphor layer, the reflecting surface and the electrode portion is high, and the moisture resistance and reflow resistance are excellent.

  When the phosphor layer is configured by applying a dot-like phosphor on the reflection surface, a part of the light incident on the reflection surface from the LED chip excites the phosphor to cause fluorescence. In addition, the other part is not incident on the phosphor and is reflected by the reflecting surface, so that it is possible to finely adjust the luminous intensity of the excitation light by the phosphor, and the chromaticity of the mixed color light is further improved. It becomes possible to set in detail.

  When the light-shielding part provided on the substrate surface is provided on the other side of the LED, the light emitted directly from the LED chip, that is, without being reflected by the reflecting surface, is blocked by the light-shielding part. Will be. Thereby, when the phosphor layer is provided on the inner surface of the reflection surface, the occurrence of color unevenness in the entire color mixture light can be suppressed by the direct light from the LED chip.

  In the case where the resin mold part is formed in an arc shape centering on the opposite hyperboloid focal point which is a pair of the reflection surface on the other side, the light reflected by the reflection surface is resin mold When the light is emitted from the portion to the outside, the light is incident substantially perpendicular to the boundary surface of the resin mold portion, so that refraction by the boundary surface of the resin mold portion is suppressed.

  When the resin mold portion is multilayered, the refractive index of the entire resin mold portion can be controlled by multilayering with materials having different refractive indexes.

  When the resin mold part or the phosphor layer contains a scattering agent, the light emitted from the resin mold part is more diffused by scattering of light by the scattering agent, and has a wide directivity. In addition, particularly in the phosphor layer, the reflectance of the reflecting surface can be controlled.

  When the resin mold part contains particles having a particle size equal to or less than ½ of the wavelength of light emitted from the LED chip or the excitation light from the phosphor and having a refractive index higher than that of the resin mold part The refractive index of the entire resin mold part can be controlled by increasing the apparent refractive index of the resin mold part.

  Thus, according to the present invention, by forming the electrode portion with a conductive pattern on a substrate made of a ceramic or Si substrate, it is possible to withstand the temperature of the LED chip eutectic bonding to the electrode portion, By metallizing the electrode part and / or the bipolar reflective surface, it is possible to increase the reflectivity, prevent migration, and maintain a high reflectivity over a long period of time.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS.
The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. As long as there is no description of the effect, it is not restricted to these aspects.

FIG. 1 shows the configuration of a first embodiment of an LED according to the present invention.
In FIG. 1, an LED 10 is formed so as to surround a substrate 11, a pair of electrode portions 12 and 13, an LED chip 14 mounted on a chip mounting portion 12 a of one electrode portion 12, and the LED chip 14. The concave reflecting surface 15 formed, the phosphor layer 16 formed on the inner surface of the reflecting surface 15, the light shielding portion 17 disposed on the substrate 11 on the other side of the LED chip 14, and the inside of the reflecting surface 15 And a resin mold part 18 filled in the container.

  The substrate 11 is an alumina-based flat ceramic substrate.

The electrode portions 12 and 13 are each formed as a conductive pattern on the surface of the substrate 11 by patterning or the like, and the surfaces thereof are metallized.
Here, the electrode portions 12 and 13 are arranged such that the chip mounting portion 12a and the bonding portion 13a face each other at a predetermined interval in the vicinity of the center of the substrate 11, and the substrate 11 It is exposed along the left and right side edges.
The metallization treatment is carried out on the surfaces of the electrode parts 12 and 13, for example, an alloy containing Bi in Au or Ag or an alloy containing Nd in Ag, and a high reflectance, preferably 80% or more, and migration. So as to form an alloy that prevents

The LED chip 14 is, for example, AuSn eutectic bonded onto the chip mounting portion 13a of one electrode portion 12 on the surface of the substrate 11, and the electrode provided on the surface is adjacent to the other electrode portion. The 13 bonding portions 13a are electrically connected by a bonding wire 19 such as a gold wire.
In this case, since the substrate 11 is made of ceramic and has heat resistance at a temperature necessary for eutectic bonding (for example, 300 ° C.), the LED chip 14 is not affected without affecting the substrate 11. Eutectic bonding to the chip mounting portion 12a can be performed.

Here, the LED chip 14 is a so-called blue LED chip, and is an active layer made of a nitride-based semiconductor that generates light having a peak wavelength of 480 nm or less formed on SiC, which is a translucent conductive substrate. And electrodes disposed above and below the active layer, and emits light having a peak wavelength of, for example, 463 nm when a driving voltage is applied.
The nitride-based semiconductor is, for example, InGaN, GaN, AlInGaN, AlN, InN or the like grown by MOCVD, liquid phase, or the like, and has a quantum well structure with a pn junction.
Further, preferably, n-type dopants include Si, Ge, Se, Te, C, and p-type dopants include Zn, Mg, Be, Ca, Sr, Ba, and the like. , Each used.

As shown in FIG. 2, the reflecting surface 15 is formed in the shape of a hyperboloid CH1 on the substrate 11 so that the LED chip 14 is positioned near the focal position F1, and in FIGS. It is formed integrally with the substrate 11 so as to be concave upward.
The inner surface of the reflecting surface 15 is metalized in the same manner as the electrode portions 12 and 13 described above.

The phosphor layer 16 is provided on the inner surface of the reflecting surface 15 and is formed by printing, injection, hot melt, or the like, using a transparent resin material mixed with the phosphor.
Thereby, the phosphor layer 16 has a predetermined thickness (predetermined width in the plan view of FIG. 1). Here, the phosphor is, for example, a silicate phosphor or the like, and is excited by blue light from the LED chip 14 to generate, for example, yellow light (peak wavelength 563 nm), and the blue light from the LED chip 14 By mixing colors, white light is emitted to the outside.

The light shielding portion 17 is disposed on the substrate 11 on the light emitting side of the LED chip 14 (upper side in FIG. 1) between the electrodes 12 and 13 in the illustrated case, and is similar to the reflective surface 15 described above. Are formed integrally with the substrate 11.
The length of the light shielding portion 17 in the horizontal direction in the drawing is selected so as to block light that is emitted from the LED chip 14 and that is not incident on the reflection surface 15 and is directly emitted to the outside. ing.

The resin mold portion 18 is made of a transparent resin material such as an epoxy resin, a polyolefin resin, a silicone resin, a PVA resin, or a fluorine resin, and is applied to a region on the substrate 11 surrounded by the reflective surface 15. Is filled.
In addition, although the said resin mold part 18 is comprised from the single material as a whole, for example, you may be formed by multilayering the transparent material which has mutually different refractive indexes, and, thereby, the refraction | bending of the resin mold part 18 whole. The rate can be controlled.

The side view type LED 10 according to the embodiment of the present invention is configured as described above. When a driving voltage is applied to the LED chip 14 via the pair of electrode portions 12 and 13, the LED chip 14 emits light. Blue light is emitted.
The blue light emitted from the LED chip 14 is blocked by the light shielding portion 17 while the light to be emitted directly through the resin mold 18, and the light incident on the reflective surface 15 is shaped on the reflective surface CH 1. Then, the light is emitted to the outside through the resin mold portion 18. At this time, the reflecting surface 15 has a hyperboloid CH1 as shown in FIG. The hyperboloid CH2 paired with the hyperboloid CH1 has focal points F1 and F2, respectively. The light emitted from the LED chip 14 disposed at the focal point F1 reaches the hyperboloid CH1 and is reflected. At this time, the direction of the reflected light is a direction along the extending direction of the straight line connecting the reflection point of the hyperboloid CH1 from the focal point F2. In other words, the light is diffusely irradiated as if it is emitted from the focal point F2. Further, this light can be incident on the boundary surface of the resin mold portion 18 substantially perpendicularly.

At that time, the blue light from the LED chip 14 is incident on the phosphor mixed in the phosphor layer 16 provided on the inner surface of the reflection surface 15, thereby exciting the phosphor and generating yellow light. .
Then, the yellow light is mixed with the blue light from the LED chip 14 to become white light, which is emitted from the end surface 18a of the resin mold portion 18 to the outside through the resin mold portion 18. .

In this case, since the substrate 11 is made of a ceramic material, SiC, or the like, when the LED chip 14 is eutectic bonded to the chip mounting portion 12a of the electrode portion 12 formed with a conductive pattern on the surface thereof, the substrate 11 has heat resistance at a temperature required for eutectic bonding (for example, 300 ° C.), the substrate 11 is not affected by heat even when exposed to such a high temperature. Crystal bonding can be performed reliably.
Therefore, the LED chip 14 can be satisfactorily bonded to the chip mounting portion 12a of the electrode portion 12.

  Further, since the electrode parts 12 and 13 and the reflection surface 15 are metalized, a sufficiently high reflectance can be obtained, and the reflectance is not lowered by migration or the like. Since the high reflectance is maintained even during the period of use, the light extraction efficiency does not deteriorate due to secular change.

  Furthermore, since the phosphor layer 16 is formed with a predetermined thickness on the inner surface of the reflecting surface 15, the phosphor is distributed at a uniform concentration over the entire reflecting surface 15. Therefore, the luminous intensity distribution of the excitation light by the phosphor becomes uniform, and the occurrence of color unevenness can be suppressed.

FIG. 3 shows the configuration of a second embodiment of an LED according to the present invention.
In FIG. 3, the LED 20 is different from the LED 10 shown in FIG. 1 only in that a lens surface 21 is provided instead of the flat end surface 18 a of the resin mold portion 18.
Here, the lens surface 21 is formed in a cylindrical surface centering on the focal point F2 of the hyperboloid CH2 paired with the hyperboloid CH1 constituting the reflection surface 15.

  According to the LED 20 having such a configuration, the mixed color light emitted from the phosphor layer 16 provided on the inner surface of the reflecting surface 15 is substantially the same as the LED 10 illustrated in FIG. The laser beam travels through the resin mold portion 18 toward the lens surface 21 so as to be emitted from the focal point F <b> 2, and enters the lens surface 21 substantially perpendicularly. Thereby, the light incident on the lens surface 21 is hardly refracted, that is, emitted to the outside with a minimum loss.

FIG. 5 shows the configuration of a third embodiment of an LED according to the present invention.
In FIG. 5, the LED 30 is different from the LED 20 shown in FIG. 3 only in that the phosphor layer 16 is formed in a dot shape.

  Here, the phosphor layer 16 can adjust the distribution amount of the phosphor almost uniformly on the entire reflecting surface 15 based on the dot-like area.

According to the LED 30 with such a configuration, the phosphor 20 has the same function as the LED 20 shown in FIG. 3 and the phosphor layer 16 is formed in the shape of dots on the inner surface of the reflecting surface 15. Thus, the intensity of the excitation light by the phosphor and the chromaticity of the mixed color light can be finely adjusted.
Accordingly, the intensity and chromaticity of light emitted to the outside are finely adjusted, and light having a desired color can be obtained.

By the way, in LED10,20,30 by embodiment mentioned above, control of the reflectance by the fluorescent substance layer 16 is also attained by mixing a diffusing agent in the fluorescent substance layer 16 or the resin mold part 18. FIG. As the diffusing agent, for example, inorganic materials such as titanium oxide, barium titanate, aluminum oxide, silicon oxide, and barium sulfate, and metal particles such as Ag, Al, and Au can be used.
On the other hand, in order to increase the resin refractive index of the resin mold portion 18, the transparent resin material has a refractive index higher than the refractive index and disperses particles whose particle size is ½ or less of the wavelength used. And may be mixed.

Moreover, in LED10,20,30 in embodiment mentioned above, although the ceramic substrate is used as the board | substrate 11, it is not restricted to this, For example, what impregnated the metal of the aluminum lamp in the ceramic, or aluminum nitride, Mullite and SiC may be used.
For example, it is also possible to form an electrode part with a conductive pattern on an Si substrate via an insulating layer, and to join an LED chip to this electrode part. In this case, after an oxide film is formed as an insulating film on the Si substrate, Ti / Ni / Ag, Ti / Ni / Au, Cr / Ni / Ag, Cr / Ni / Au, TiW are formed by vapor deposition or sputtering. / Ag, TiW / Au, Ti / NiV / Ag, Ti / NiV / Au, Cr / NiV / Ag, Cr / NiV / Au, Ti / Ni / AgNdCu, Cr / Ni / AgNdCu, Ti / Ni / AgBi, Cr / Ni / AgBi, TiW / AgBi, etc. are formed into a pattern to form an electrode part.
Alternatively, after a Cu thin film is formed on the oxide film by electroforming, Ag, Au, AgNdCu, AgBi, Pd, or the like is formed on the upper surface by vapor deposition, sputtering, or the like. It can cope with eutectic bonding of LED chips.

  The LED chip 14 is configured as an LED chip composed of the above-described nitride-based semiconductor layer. However, the present invention is not limited to this, and the phosphor excitation light source using blue light emission is a TiON-based phosphor excitation light source using ultraviolet light emission. InGaN-based, AlGaN-based, ZnS-based, ZnO-based, and TiO-based LED chips can be used, and any of them can be eutectic bonded.

  Further, although the silicate phosphor is used as the phosphor in the phosphor layer 16, the present invention is not limited to this, and in order to improve the color rendering, it is represented by the general formula R3 M5 O12: Ce, Pr. Among the phosphors, a phosphor in which R is at least one element of yttrium (Y) and gadolinium (Gd), or a phosphor using oxynitride glass as a base material may be used.

When color mixing such as whitening is performed using ultraviolet light, aluminate phosphors BaMg2Al16O27: Eu, BaMgAl10O17: Eu, and halophosphate phosphors (Sr, phosphors) that emit blue light are used. Ca, Ba) 5 (PO4) 3Cl: Eu, aluminate phosphor BaMg2Al16O27: Eu, Mn which is a phosphor emitting green light, halosilicate phosphor Ca8Mg (SO4) 4Cl: Eu, Mn, Silicate phosphor ((Ba, Sr, Ca, Mg) 1-x, Eux) 2 SiO4, Zn2 GeO4: Mn and oxysulfide phosphor Y2 O2 S: Eu, Y2 O3 which is a phosphor emitting red light: Eu, Bi, thiogallate (Sr, Ca, Ba) (Al, Ga) 2 S4
: Eu etc. may be mixed and used.

Further, as a phosphor emitting red light, the composition is A (Eu1-xy Mx Smy) (W1-z Mox) 2 O8 (where A is Li, Na so that light from the LED chip can be absorbed). , K, Rb, and Cs, and M is an element of B, Al, Sc, Ga, In, Tl, Sb, Bi, Y, La, Gd, Lu, Nb, Ta, Hf, and P. Among them, there is a phosphor having at least one or more of 0 ≦ x ≦ 1.3, 0 <y ≦ 0.1, 0 ≦ z ≦ 1).
AEux Ln1-x M2 O8 (where 0 <x ≦ 1, A is at least one of the elements Li, Na, K, Rb and Cs, and Ln is at least one of the elements Y, La, Gd and Lu) 1 or more, M is at least one element of W or Mo) and is a phosphor that emits light by being excited by light in the long ultraviolet region from blue, and is red in which Eu3 + ions are arranged two-dimensionally or one-dimensionally. Luminescent phosphors can also be used.

Further, as a phosphor that compensates for yellow light emission that is insufficient as RGB continuous light, (2-xy) SrO.x (Ba, Ca) O. (1-abbcd) SiO2 .aP2 O5 BAl2 O3 cB2 O3 dGeO2: yEu2 + (where 0 <X <1.6, 0.005 <y <0.5, 0 <a, b, c, d <0.5) Alkaline earth metal orthosilicates activated with divalent europium, (2-xy) BaO.x (Sr, Ca) O. (1-abbcd) SiO2 .aP2 O5・ BAl2 O3 ・ cB2 O3 ・ dGeO2
: Alkaline earth metal orthosilicate represented by yEu2 + (where 0.01 <X <1.6, 0.005 <y <0.5, 0 <a, b, c, d <0.5) Oxynitride phosphors containing nitrogen in the structure of oxynitride glass, β-sialon, α-sialon, etc. are used as salts or structurally stable and capable of shifting excitation light and light emission to the longer wavelength side Can be done.

  In the above-described embodiment, a blue LED chip is used as the LED chip 14. However, the LED chip 14 is not limited to this, and may be an LED chip that emits light of other colors.

  In the above-described embodiment, the phosphor layer 16 is formed on the inner surface of the reflecting surface 15. However, the present invention is not limited to this, and in the case where color mixing with excitation light from the phosphor is not necessary, the phosphor layer Layer 16 may be omitted.

  Further, in the above-described embodiment, the light shielding portion 17 is provided on the emission side of the LED chip 14. However, the present invention is not limited to this, and the case where the light from the LED chip 14 may be emitted directly to the outside or fluorescence. When the body layer 16 is omitted, the light shielding portion 17 may be omitted.

  Further, in the above-described embodiment, the inner surface of the reflecting surface 15 is metallized. However, when the light transmitted through the phosphor layer 16 hardly reaches the reflecting surface 15, the reflecting surface 15 is metalized. May be omitted.

In this way, according to the present invention, an extremely excellent LED is provided that has a simple configuration and eliminates the thermal effects due to eutectic bonding of the LED chip and can suppress the occurrence of color unevenness. obtain.
Such LEDs can be widely used as illumination light sources for backlights, in-vehicle indicators, switch lamps, emergency lights, guide lights, gas detection sensor light sources, and light sources for optical communication.

It is a top view which shows 1st embodiment of LED by this invention. It is a schematic plan view which shows the relationship between the LED chip in the LED of FIG. 1, and a reflective surface. It is a top view which shows 2nd embodiment of LED by this invention. It is a schematic plan view which shows the relationship between the LED chip and reflection surface in LED of FIG. It is a top view which shows 3rd embodiment of LED by this invention. It is (A) front view and (B) bottom view which show the structure of an example of the conventional side view type LED.

Explanation of symbols

10, 20, 30 LED
DESCRIPTION OF SYMBOLS 11 Board | substrate 12,13 Electrode part 14 LED chip 15 Reflecting surface 16 Phosphor layer 17 Light-shielding part 18 Resin mold part

Claims (8)

A flat substrate made of a ceramic or Si substrate;
Two electrode portions by a conductive pattern formed on the surface of the substrate;
An LED chip that is eutectic bonded onto the chip mounting part of one electrode part and whose surface is connected to the bonding part of the other electrode part;
A concave reflecting surface comprising a hyperboloid formed on the substrate surface so as to surround the LED chip from one side on the substrate surface and the LED chip is positioned in the vicinity of its focal position;
A resin mold portion made of a transparent resin material filled inside the reflective surface;
Contains
The surface of the electrode part and / or the reflective surface is metallized,
A side view type LED, wherein light from the LED chip is reflected by the reflecting surface and emitted toward the other side along the substrate surface.   The LED according to claim 1, wherein a phosphor layer is provided on an inner surface of the reflecting surface.   The LED according to claim 2, wherein the phosphor layer is configured by applying a dot-like phosphor on the reflection surface.   The LED according to claim 2 or 3, further comprising a light-shielding portion provided on a substrate surface on the other side of the LED.   The said resin mold part is formed in the circular arc shape centering on the focal point of the opposite hyperboloid which becomes a pair of the said reflective surface on the other side, The one in any one of Claim 1 to 4 characterized by the above-mentioned. LED of description.   6. The LED according to claim 1, wherein the resin mold portion is multilayered.   The LED according to claim 1, wherein the resin mold part or the phosphor layer contains a scattering agent.   The resin mold part includes particles having a particle diameter equal to or less than ½ of the wavelength of light emitted from the LED chip or the excitation light from the phosphor and having a refractive index higher than that of the resin mold part. The LED according to claim 1, characterized in that:

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