JP2006261267A - Inspection apparatus and inspection method, integrated circuit element manufacturing method, integrated circuit element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe card necessary for inspection of one IC chip in one probe card so that a plurality of patterns can be measured.
SOLUTION: A mounting table for placing an object to be inspected, a driving mechanism for moving the mounting table in the vertical and horizontal directions, and a plurality of probe needles arranged to face the mounting table, are mounted by the driving mechanism. By moving the mounting table, the probe needle is brought into contact with a plurality of electrodes of the inspection object placed on the mounting table, and the inspection object is inspected. Each electrode of the inspection object corresponds to each electrode. And at least one relative distance from the contact portion of the probe needle.
[Selection] Figure 1

Description

  The present invention relates to a wafer inspection apparatus and inspection method using a probe needle, an integrated circuit element manufacturing method, and an integrated circuit element.

  FIG. 16A is an enlarged plan view showing a state in which the probe needle is in contact with the wafer chip in the conventional wafer chip inspection apparatus using the probe needle. In FIG. 16A, 1 is an IC chip, 2 is a probe needle, 3 is a probe card, 4 is an electrode pad on which the probe needle 2 hits the IC chip 1, and 5 is a probe card 3 for fixing the probe needle 2. It is an insulator attached to. The probe card 3 is provided with probe needles 2 necessary for all measurement items. FIG. 16C is a plan view of the wafer 6 on which the IC chips 1 are formed in a regular relationship.

  As shown in FIG. 16 (b), in order to automatically measure each IC chip 1 of a normal wafer, a wafer stage 7 which can be moved in the XYZθ direction with a wafer 6 fixed and a probe needle 2 are attached. A certain probe card 3 is used. Measurement is carried out by applying the probe needle 2 to each chip on the wafer 6 placed on the wafer stage 7. In normal measurement, the pins to be used differ depending on the test item, so it is rare to use all pins simultaneously as applied voltage, applied current, and measurement pin. A method is generally used in which a probe card 3 having probe pins 2 of all pins is used by selecting a pin to be read on the measurement circuit side even if all the pins are in contact with the electrode pad 4.

  In the case of a chip that is easily affected by noise or a chip in which the wiring capacity is a problem, a relay for cutting the circuit is provided in the measurement circuit. However, in a chip with a large input impedance and an amplifier gain of several hundred times or more, or a chip whose measurement frequency exceeds several MHz, the probe needle of about 20 to 30 mm is only in contact with the electrode pad of the IC chip. However, due to the effects of noise and capacitance, there are items that cannot be measured correctly unless the probe needle is separated from the electrode pad.

  As such an influence, there are a pickup IC chip having a high response speed, a remote control IC chip for inputting a minute signal, a chopper regulator IC chip, a high noise resistance type phototriac chip, and the like.

Conventionally, a plurality of probe cards 3 having only probe needles 2 necessary for measurement are prepared for this problem. After all the IC chips 1 are measured with each probe card 3, the probe card 3 is replaced and a plurality of probe cards 3 are replaced. The measurement was performed once. In order to improve this problem, as shown in FIG. 17, two sets of test probe needles for one IC chip are arranged side by side in the measurement progress direction in the same probe card 8, and each test is performed. A wafer test method is disclosed in which the arrangement of needles with respect to the electrodes in the set of probe needles for use is made different so that the measurement by each set of probe needles for inspection is performed continuously to judge the quality of one IC chip. 239341.
JP-A-3-239341

  However, in the former method, since the measurement is performed a plurality of times, it takes time for the measurement, and it is necessary to prepare a plurality of probe cards, which also increases costs. In addition, the probe card needs to be replaced, which is inefficient.

  On the other hand, in the latter method, since the measurement is performed once, the measurement time is considerably shortened. However, since not all measurements are performed simultaneously on one IC chip, the tester program becomes complicated, such as the process of storing each data and the process of combining for determination, and cannot be supported depending on the type of tester. There are also things. Also, the prober is limited in that it outputs positional information and the measurement order direction is determined, so that a prober corresponding to movement in a certain direction is required.

  Another major problem is the simultaneous measurement of multiple chips, which is often done to shorten the measurement time. The number of probe needles must be increased several times. The number of wires increases.

  The present invention is for solving the above-described problems. A mounting table on which an object to be inspected is placed, a driving mechanism for moving the mounting table in the vertical and horizontal directions, and the mounting table. A plurality of probe needles arranged, and moving the mounting table by the drive mechanism to bring the probe needles into contact with a plurality of electrodes of the testing object placed on the mounting table; The inspection apparatus is characterized in that at least one relative distance between each electrode of the inspection object and a contact portion of the probe needle corresponding to each electrode is different.

  The inspection object is an integrated circuit element including a plurality of electrodes, wherein at least one of the electrodes has a shape different from that of other electrodes.

  Also, a plurality of electrodes of the inspection object in which a plurality of probe needles placed on the mounting table are placed on the mounting table, the mounting table is moved in the vertical and horizontal directions, and the probe needles arranged to face the mounting table are placed on the mounting table. In the integrated circuit device inspection method for inspecting the object to be inspected, at least one relative distance between each electrode of the object to be inspected and the contact portion of the probe needle corresponding to each electrode is made different In this state, the inspection is performed with the electrode and the probe needle sequentially brought into contact with each other by moving the mounting table.

  Also, an integrated circuit forming process for forming an integrated circuit element on a silicon wafer substrate, and a wafer on which the integrated circuit element is formed in the integrated circuit forming process are placed on a mounting table, and each electrode and each electrode of the integrated circuit element are placed on the mounting table. A wafer inspection step in which inspection is performed by sequentially moving the electrode and the probe needle in a contact state by moving the mounting table in a state where the relative distance from the corresponding contact portion of the probe needle is different from one another; It comprises a dicing process for cutting the wafer inspected in the wafer inspection process into integrated circuit element units.

  According to the present invention, in integrated circuit element inspection, all probe needles necessary for inspection of one chip are held in one probe card, and the positional relationship between an arbitrary probe needle and electrodes of the integrated circuit element is determined. It can be in contact or non-contact. Therefore, in a state where one probe card is assigned to one chip to be inspected, it is possible to perform an inspection using a plurality of types of measurement patterns with different electrodes that contact the probe needle.

  As a result, measurement is possible with a combination of probe needles necessary for each measurement, and it is possible to avoid the influence of noise and capacitance from probe needles placed on electrodes unnecessary for measurement.

  In addition, the probe card can have a structure in which probe needles necessary for measurement are set up on one probe card for one chip to be measured, and a plurality of measurements can be completed by assigning one probe card.

  Moreover, it is not necessary to replace the probe card, and the restriction on the measurement order can be eliminated.

  Furthermore, data processing after measurement in the inspection apparatus is facilitated.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

  FIG. 1 is a schematic view showing an example of an inspection apparatus according to the present invention. FIG. 2 is an explanatory view illustrating a manufacturing process for manufacturing an IC chip (integrated circuit element) to be inspected according to the present invention.

  First, a manufacturing process for manufacturing an IC chip (integrated circuit element) will be described with reference to FIG.

  An oxide film 14 is formed on the silicon wafer substrate 13, and a resist photosensitive agent 15 is applied and cured (FIG. 2 (a)). Then, the circuit layout pattern data of the photomask is transferred, exposed, and developed (the exposed portion of the resist photosensitive agent is peeled off (FIG. 2B)). The exposed oxide film 14 is removed by etching (FIG. 2C), and then the remaining resist photosensitive agent 15 is removed (FIG. 2D). Thereafter, a diffusion process, an ion implantation process, and the like corresponding to circuit elements such as resistors, transistors, and capacitors formed on the silicon wafer substrate 13 are performed to create an impurity diffusion region 16 (FIG. 2E). By repeating this process from oxide film formation to impurity diffusion several times, an integrated circuit element is formed on the silicon wafer substrate 13 (FIG. 2E is a schematic cross-section when the integrated circuit resistance element is formed). is there).

  Finally, an electrode film 17 that also serves as an electrode of each element and a circuit wiring portion is formed (FIG. 2 (f)), a protective film 18 is formed (FIG. 2 (g)), and an integrated circuit is formed.

  A silicon wafer substrate (hereinafter referred to as a wafer) on which an IC chip is formed by the manufacturing process described above performs an inspection of electrical characteristics of the IC chip in an inspection process called a wafer test for inspecting its quality.

  In FIG. 1, the inspection apparatus includes a tester 9, a socket board 10, a probe card 3, a wafer stage 7, and a movement control unit 11.

  The tester 9 is used to create an electric signal waveform to be input to an IC chip formed on the wafer 6, and to analyze the electric signal waveform from the IC chip to determine pass / fail. The socket board 10 forms a circuit with the electronic component 12 on the board, and is re-formed according to the IC chip application for inspecting the electric signal waveform created by the tester 9. The probe card 3 is fixed to the socket board 10 with screws or the like, and is electrically connected or replaceable. The probe card 3 has an opening in the center, and the probe needle 2 is fixed to the opening by an insulator 5. The probe needle 2 is in contact with the electrode pad of the IC chip to input / output an electric signal waveform, and is arranged in accordance with the position of the electrode pad. The probe needle 2 is electrically connected to the tester 9 and the probe card 3. The wafer stage 7 holds the wafer 6 by vacuum suction, and is configured to be movable in the X, Y, Z, and θ directions by the movement control unit 11.

  The operation of this inspection apparatus will be described. The wafer 6 is mounted on the wafer stage 7, and the wafer stage 7 is moved by the movement control unit 11 to just below the opening of the probe card 3. Next, the wafer stage 7 is raised in the vertical direction, and the probe needle 2 is brought into contact with the electrode pad of the IC chip formed on the wafer 6. Thereafter, the electrical signal waveform created by the tester 9 is input via the socket board 10, the probe card 3, and the probe needle 2, and the electrical signal waveform output from the IC chip is input to the tester 9 through the reverse route at the time of input. Return, analyze, and judge the quality of the IC chip. When the inspection is completed, if the wafer stage 7 is lowered and the inspection result shows a defect, the surface of the IC chip 1 is marked with a bad mark by an inker (not shown), and the next IC chip is marked. Move to similar inspection. The defective IC chip that has been marked is eliminated in a later die-bonding process.

  Here, the arrangement relationship between the probe needle 2 and the electrode of the IC chip to be inspected in the inspection apparatus of the present invention will be described. In the probe needle 2, a plurality of probe needles necessary for various inspections are arranged as one set with respect to the IC chip to be inspected. The electrodes of the probe needle or the IC chip are arranged so that the relative distances from the individual probe needles corresponding to the electrodes are different. That is, the relative distance is set so that the distance between the needle and the electrode necessary for each measurement pattern of each inspection is the same.

  For example, in the example shown in FIG. 1, the height of the contact part to the electrode of an arbitrary probe needle is varied. In this state, by raising the height position of the wafer stage 7 stepwise, at least two types of probe needle contact patterns can be realized. Thus, since a plurality of measurement patterns can be inspected simply by providing a set of probe needles on the probe card 3 for inspecting one IC chip, it is not necessary to replace a plurality of probe cards. Further, compared to the case where two or more sets of probe needles are provided on the probe card 3, since only one set of probe needles is required, the inspection can be controlled efficiently and the restriction on the measurement order can be eliminated.

  In addition, in FIG. 1, although embodiment which varied the height of the contact part to the electrode of arbitrary probe needles was illustrated, it is not limited to this, For an inspection with respect to the IC chip to be inspected In a state where a plurality of necessary probe needles are arranged as a set, it is sufficient that the relative distance between each electrode of the IC chip to be inspected and each probe needle corresponding to this electrode is different. Other embodiments studied by those will be described in detail later.

  Next, a measurement method using the inspection apparatus of the present invention will be described with reference to FIG.

  First, all probe needles 2 are brought into contact. In the example of the inspection apparatus shown in FIG. 1, the wafer stage 7 is raised to a height at which all the probe needles 2 are in contact (S1). In such a state, if some of the probe needles 2 are not brought into contact with each other, an item whose measurement result is defective is measured (S2). When the result is a non-defective product, it is determined that the probe needle 2 for switching the contact state is not in normal contact, the height of the wafer stage 7 is adjusted again, and the probe needle 2 is contacted. If the result is bad, it is determined that the probe is in normal contact, and the items that can be measured are measured with all the probe needles 2 in contact (S3). Thereafter, the probe needle 2 for switching the contact state is made non-contact (S4), and items that cannot be measured unless some of the probe needles 2 are non-contact are measured (S5). In the example of the inspection apparatus shown in FIG. 1, the probe needles having different heights are switched to the non-contact state by lowering the wafer stage 7. If all the measurement results are non-defective, the chip is determined to be defective if there is one non-defective item, and the chip moves to the next chip.

  Here, a description will be given of the measurement time results of the measurement time of the IC chip according to the present invention and the case where two conventional probe cards are used (comparative example). The inspection target was a light-receiving chip for high-speed pickup (25,200 chips per wafer), and inspection was performed with two types of measurement patterns.

  The result of the measurement time of one wafer is 125 minutes / wafer, using the present invention, the measurement time with one probe card (moving the wafer stage 7 once in the middle to change the contact state of the probe needle). It was. On the other hand, in the comparative example, 205 minutes / wafer (104 minutes for the first time, 101 minutes for the second time after the probe card exchange), and in the case of the present invention, a time reduction of about 40% is realized as compared with the comparative example. As a result.

  Now, the wafer after the above-described wafer test process is made into an IC chip state, fixed to a lead frame, electrically connected, sealed in a resin package, and shipped as an electronic component. Alternatively, the product may be shipped in a state (IC chip unit) in which the dicing process described below is completed.

  A dicing process, a die bonding process, a wire bonding process, and a packaging process until the wafer that has finished the wafer test process becomes a product as an electronic component will be described in order with reference to FIGS.

  An adhesive vinyl sheet called a dicing sheet (not shown) is pasted on the back surface of the wafer that has finished the wafer test process. This is to prevent each IC chip from being separated in the next dicing process for dividing the wafer state into the IC chip state.

  FIG. 3 shows an enlarged view of the wafer surface. In the dicing process, the center part 20 (not formed as a line on the actual wafer) of the scribe line 19 made in the manufacturing process described above around the IC chip 1 of the wafer on which the dicing sheet is pasted is cut with a die saw. Is done.

  FIG. 4 is an explanatory diagram of the die bonding process. As shown in FIG. 4A, the lead frame 21 used in the die bonding process is formed by connecting a plurality of substrates. In this step, one IC chip 1 is mounted and fixed on the island portion 22 of the lead frame 21. The IC chip 1 placed on the dicing sheet that has undergone the dicing process is taken out by a device called a die bonder, and a good IC chip is taken out and placed on the island portion 22 of the lead frame 21 as shown in FIG. . A metal paste 23 having a property of being cured by heat is applied in advance, and the IC chip 1 adheres to the island portion 22 of the lead frame 21. Thereafter, the lead frame 21 on which the IC chip 1 is placed is placed in an oven device, the metal paste is cured, and the island portion 22 of the lead frame 21 and the IC chip 1 are completely fixed.

  FIG. 5 is an explanatory diagram of the wire bonding process. In the wire bonding step, the electrode pad 4 of the IC chip 1 mounted on the island portion 22 of the lead frame 21 and the lead 24 of the lead frame are erected with a gold wire 25.

FIG. 6 is an explanatory diagram of the packaging process. In this step, the external lead portion 26 of the lead frame 21 is sealed with a resin sealing body 27 so as to be exposed (FIG. 6A).
Thereafter, the outer frame of the lead frame is deleted to complete one electronic component (FIG. 6B).

  Subsequently, each embodiment of the inspection apparatus of the present invention will be described with reference to the drawings.

  FIG. 7 is a partially enlarged view of the inspection apparatus of the present invention. In this embodiment, in order to make the probe needle 2 fixed to the insulator 5 movable in the inspection apparatus of FIG. 1, an electromagnetic solenoid 29 to which the probe needle 2 is attached is provided instead of the probe needle 2. , Movable. As a result, a state in which the probe needle 2 and the electrode pad 4 are in contact with each other can be arbitrarily made in a probe needle unit.

  29 is an electromagnetic solenoid, 30 is a movable iron piece, 28 is a support base for fixing to the probe card 3 or the insulator 5 at the opening of the probe card 3, and in this embodiment the support base 28 is fixed to the insulator 5. It is in the state that was done. A variable mechanism that varies the height position of the probe needle 2 includes an electromagnetic solenoid 29 and a movable iron piece 30.

  The probe needle 2 is fixed to the movable iron piece 30 via an insulator, and when the electromagnetic solenoid 29 is energized, the movable iron piece 30 moves downward to be in a contact state. The structure is restored to the non-contact state by a spring built in the housing. The electromagnetic solenoid 29 is controlled by a control signal from the tester 9 in the same manner as the relay for switching the measurement circuit. As a result, the contact state of the probe needle 2 can be instantaneously switched.

  FIG. 8 is a partially enlarged view of another embodiment of the inspection apparatus of the present invention. As in Example 1, in order to make the probe needle 2 fixed to the insulator 5 movable, a movable portion 31 was provided between the support base 28a that supports the probe needle 2 and the support base 28b. As a result, the probe needle 2 and the electrode pad 4 can be brought into contact and non-contact (see FIG. 8B). In this embodiment, the support base 28 b is fixed to the insulator 5. The support base 28a is preferably an insulator.

  By using a bimetal for the movable part 31, when a current is directly applied to the bimetal, the movable part 31 generates heat and curves, and the probe needle 2 fixed to the tip of the movable part 31 via the insulator 32 moves up and down to contact. Make a state, non-contact state. If the movable amount is small, a piezo element or the like can be applied in addition to the bimetal. The movable portion 31 is preferably a thermally responsive member having the above-described characteristics, and the variable mechanism that varies the height position of the probe needle 2 is composed of the movable portion 31.

  Compared to the first embodiment, the movable portion can be made smaller, which is advantageous when many probe needles 2 are movable. Further, the moving speed is slower than that of the solenoid, and the impact applied to the needle tip of the probe needle 2 and the electrode pad 4 at the time of contact can be reduced.

  FIG. 9 is a partially enlarged view of another embodiment of the inspection apparatus of the present invention. In order to make the probe needle 2 fixed to the insulator 5 movable, the wire 42 attached thereto is attached from the upper surface of the probe card 3 by the electromagnetic solenoid 29 attached to the support base 33 fixed to the probe card 3. The insulator 32 and the probe needle 2 are pulled up to make the probe needle 2 movable. As a result, the probe needle 2 and the electrode pad 4 can be brought into contact and non-contact. The variable mechanism for changing the height position of the probe needle 2 is composed of an electromagnetic solenoid 29 and a wire 42.

  When the electromagnetic solenoid 29 is energized, the wire 42 and the probe needle 2 are pulled up and brought into a non-contact state, and when not energized, the wire 42 and the probe needle 2 come into contact with each other by returning to the same height as the other probe needles 2. The feature of this structure is that it can be easily attached to an ordinary probe card 3 and can be moved by preparing an electromagnetic solenoid 29 as a movable means, a wire 42 for lifting, and a support base 33 for fixing them. It is also possible to change the probe needle 2 to be used, and it is more effective when used for experiments and development than the production apparatus.

  FIG. 10 is a partially enlarged view of another embodiment of the inspection apparatus of the present invention. In order to make the probe needle 2 fixed to the insulator 5 movable, the probe needle 2 is pushed up from below the probe needle 2 so that the probe needle 2 is movable. As a result, the probe needle 2 and the electrode pad 4 can be brought into contact and non-contact.

  As shown in FIGS. 10A and 10B, a non-circular cam 34 made of an insulating material such as ceramic or glass epoxy resin is provided at the lower portion of the probe needle 2, and the cam 34 is rotated. The stepping motor 36 and the shaft 35 connecting them are configured. The variable mechanism for changing the height position of the probe needle 2 is composed of a non-circular cam 34, a shaft 35, and a stepping motor 36.

  Further, as shown in FIG. 10C, the stepping motor 36 is disposed on the probe card 3 and extends downward from the probe needle 2 to be movable by the shaft 35, and the cam 34 is placed just below the probe needle 2. Deploy.

  A signal enters the stepping motor 36, the shaft 35 rotates, and the convex portion of the cam 34 pushes up the probe needle 2 to create a non-contact state.

  FIG. 11 is a partially enlarged view of another embodiment of the inspection apparatus of the present invention. In many cases, the electrode pads of the IC chip are generally arranged at both ends of the IC chip, and in accordance with the arrangement, the probe card 3 also has probe needles extending inward from the two sides as shown in the conventional example of FIG. It is often arranged. FIG. 11A shows such a probe card 3 having a structure in which a plurality of probe needles 2 are simultaneously moved by a single movable device using the movable method of the structure of the fourth embodiment described above.

  That is, by driving a plurality of cams 34 attached to the shaft 35 in the same direction by a single stepping motor 36, it is possible to simultaneously switch the contact state of the plurality of probe needles 2. Further, as shown in FIG. 11B, the contact state of the plurality of probe needles 2 can be individually switched by controlling the stepping motor 36 by changing the angles of the plurality of cams 34, respectively. The variable mechanism that varies the height position of the probe needle 2 includes a plurality of non-circular cams 34, a shaft 35, and a stepping motor 36.

  In the case of the probe card 3 as shown in FIG. 11A, if there are two movable devices having these structures, the contact state of a plurality of probe needles can be freely switched. In the embodiment, the stepping motor 36 has been described as the movable means, but other methods may be used as long as the cam 34 can rotate and the position of the cam 34 can be controlled.

  FIG. 12 is a partially enlarged view of another embodiment of the inspection apparatus of the present invention. The height of the tip of the probe needle 37 that switches the contact state is higher than the height of the other probe needle 2 in advance, and the electrode pad 4 of the probe needle 37 is adjusted by adjusting the height of the wafer stage 7. The contact state and non-contact state can be made. (Fig. 12 (a))

  When the movement control unit 11 raises the wafer stage 7 and the probe needle 2 with a normal height is in contact, the probe needle 37 is not yet in contact with the electrode pad 4. As the wafer stage 7 is further raised, the probe needle 37 also contacts the electrode pad. The normal wafer stage 7 is a two-stage operation that rises at the time of measurement and descends at the time of movement. Further, the height at the time of ascent is switched by a signal from the movement control unit 11. The height of the needle tip of the probe needle 37 for switching the contact state is higher than that of a normal probe needle in consideration of the height variation at the time of manufacturing the probe needle and the weight (needle pressure) of the normal probe needle at the time of non-contact. Is also increased by 50 to 150 μm. If the height of the probe needle is changed to three types, and the height of the wafer stage 7 is changed accordingly, three types of switching can be performed. The feature of this method is that it is only necessary to adjust the height of the needle when the probe card is manufactured, and a device for moving the needle is unnecessary. This is effective when a large number of probe needles are required.

  This is a modification of the structure of the sixth embodiment. As shown in FIG. 12A, in the structure of the sixth embodiment, when the probe needle 37 is in a contact state, the needle pressure of the normal probe needle 2 is larger than an appropriate state, and the electrode pad 4 Since the contact is strong, the needle mark on the electrode pad 4 may increase, or the electrode pad 4 may be removed by the needle tip. When the needle trace becomes large or the electrode pad 4 is greatly damaged, there is a problem that the recognition of the electrode pad 4 in the wire bonding apparatus is deteriorated in the subsequent device packaging process or the strength of the wire bond is lowered. appear.

  In this embodiment, as shown in FIG. 12 (b), the tip of the probe needle 38 having a normal height at which the needle pressure increases is made thicker and flatter than the tip of the probe needle 37 for switching the contact state. Even if the needle pressure is applied, the electrode pad 4 has a structure in which needle marks are difficult to stick. Although not shown, it is also effective to adjust the spring effect of the probe needle, such as making the needle diameter of the probe needle that increases the needle pressure narrower or longer, or performing a needle stand at a small angle with respect to the electrode pad surface. It is.

  FIG. 13 is a partially enlarged view of an IC chip that realizes the inspection method of the present invention. According to the present embodiment, the probe needle 2 that is in contact with the surface of the wafer 3 or the electrode pad is moved laterally by the height movement of the wafer stage 7 without using an inspection apparatus as in the above-described embodiments. Thus, a contact state and a non-contact state can be created.

  FIG. 13A shows an electrode pad of an IC chip for switching the contact state. In FIG. 13A, the first contact portion due to the height movement of the wafer stage 7 is a portion 40 (non-conductive portion) in which no electrode is provided in a part of the electrode pad, and a manufacturing process including an electrode forming step of the semiconductor substrate. Created in. FIG. 13B is a plan view of a normal electrode pad. FIG. 13C shows a state in which an ordinary probe card is in contact with the IC chip having these two types of electrode pads. FIG. 13D further shows a state in which the needle pressure is increased by raising the wafer stage. is there. In the state of (c) of FIG. 13, since there is no electrode directly under the probe needle 2 which contacts the electrode pad 39 which switches a contact state, it is a non-contact state. When the wafer stage 7 is further raised, needle pressure is applied to the probe needle 2, and when the needle stand is tilted as shown in FIG. 13 (d), the probe needle is moved by the lateral movement of the surface. The electrode pad electrode is brought into contact with the portion 39 where the electrode pad electrode is present, and a contact state is established. The advantage of this method is that conventional probe needles and probe cards can be used as they are.

  FIG. 14 is a partially enlarged view of another embodiment of the IC chip for realizing the inspection method of the present invention. The present embodiment is a modification of the electrode pad that switches the contact state of the eighth embodiment. As shown in FIG. 14 (a), the boundary between the portion 39 having the electrode and the portion 40 having no electrode (non-conductive portion) is formed in a “<” shape in the manufacturing process including the electrode forming step of the semiconductor substrate. The probe needle 2 is easy to slide in the center of the electrode pad (moves in the lateral direction). By stopping at the center of the "<", the contact area between the probe needle tip side surface and the electrode pad is smaller than that of the case where the boundary is a straight line growing. This makes the contact state more reliable.

  Similarly, Example 10 is shown using FIG. FIG. 14B shows an improvement of the electrode pad for switching the contact state in Example 8, and a semiconductor substrate in which a portion 40 (non-conductive portion) having no electrode is circularly arranged at the center of the electrode pad as shown in FIG. It is created in a manufacturing process including the electrode forming process. In the ninth embodiment, the lateral movement of the probe needle 2 is used, and the boundary between the portion 39 (conductive portion) with the electrode and the portion 40 (non-conductive portion) without the electrode is in the direction of the probe needle 2. The center of the letter “ku” must match. However, the direction in which the needle is raised toward the electrode pad of the probe needle 2 differs depending on the probe needle 2 and is not constant. Therefore, the direction of the boundary between the portion 39 (conductive portion) where the electrode of the electrode pad is located and the portion 40 (non-conductive portion) where the electrode is not present needs to be changed depending on the needle stand direction. Therefore, as shown in FIG. 14B, a portion 40 (non-conductive portion) without electrode of the electrode pad is circular and arranged at the center of the chip, and the center of the portion 40 (non-conductive portion) without electrode of the electrode pad is arranged. By contacting the probe needle 2 with the probe needle 2, it is possible to cope with all the needle stand directions.

  Furthermore, Example 11 is shown using FIG. 14 is an improvement of the electrode pad for switching the contact state in Example 8, and in the manufacturing process including the electrode forming step of the semiconductor substrate, an insulator as a non-conductive portion is used as a normal electrode pad as shown in FIG. A nitride film or a polyimide film 41 serving as an electrode protection film is formed on 39. This embodiment is suitable when it is difficult to make a portion without an electrode of the electrode pad, or when there is a circuit under the electrode pad 4 and it is not desired to directly apply the probe needle pressure.

  Note that the electrode pad for switching the contact state in FIG. 14 has a smaller electrode than the normal electrode pad. Therefore, if there is a problem in wire bonding in a later process, Alternatively, they may be provided in parallel for wafer testing.

Schematic of the inspection apparatus of the present invention. Explanatory drawing of the manufacturing process of IC chip used with the inspection apparatus of this invention. Enlarged view of the wafer surface used in the inspection apparatus of the present invention Explanatory drawing of a die-bonding process. Explanatory drawing of a wire bond process. Explanatory drawing of a packaging process. The elements on larger scale of the inspection apparatus in Example 1 of this invention. The elements on larger scale of the inspection apparatus in Example 2 of this invention. The elements on larger scale of the inspection apparatus in Example 3 of this invention. The elements on larger scale of the inspection apparatus in Example 4 of this invention. The elements on larger scale which show the drive mechanism of the inspection apparatus in Example 5 of this invention. The elements on larger scale of the inspection apparatus in Example 6, 7 of this invention. The elements on larger scale of the IC chip in Example 8 of this invention. FIG. 6 is a plan view of an IC chip electrode cut according to Examples 9, 10, and 11 of the present invention. The flowchart of the measuring method by the test | inspection apparatus of this invention. The enlarged plan view of the probe card of the prior art example 1. FIG. The enlarged plan view of the probe card of the prior art example 2. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 IC chip 2 Probe needle 3 Probe card 4 Electrode pad 5 Insulator 6 Wafer 7 Wafer stage 8 Probe card support stand 9 Tester 10 Socket board 11 Movement control part 12 Electronic component 13 Silicon wafer substrate 14 Oxide film 15 Resist photosensitive agent 16 Impurity Diffusion region 17 Electrode film 18 Protective film 19 Scribe line 20 Scribe line center portion 21 Lead frame 22 Lead frame island portion 23 Metal paste 24 Lead frame lead 25 Gold wire 26 Lead frame external lead portion 27 Resin sealing body 28 Support base 29 Electromagnetic solenoid 30 Movable iron piece 31 Movable part (bimetal, piezo element, etc.)
32 Insulator 33 Support Base 34 Insulator Cam
35 shaft
36 Stepping motor 37 Probe needle with different height 38 Probe needle with different needle tip shape 39 Electrode (conductor such as Al)
40 Parts without electrodes (insulators such as SiO2)
41 Insulating film such as nitride film or polyimide 42 Wire

Claims (20)

A mounting table for placing an object to be inspected, a drive mechanism for moving the mounting table in the vertical and horizontal directions, and a plurality of probe needles arranged to face the mounting table; In the inspection apparatus for inspecting the inspection object by bringing the probe needle into contact with a plurality of electrodes of the inspection object placed on the mounting table, by moving
An inspection apparatus in which at least one relative distance between each electrode of the object to be inspected and a contact portion of the probe needle corresponding to each electrode is varied.   The inspection apparatus according to claim 1, further comprising a variable mechanism for changing a height position of a contact portion of the probe needle.   The inspection apparatus according to claim 1, wherein height positions of contact portions of the probe needles are arranged differently in advance.   2. The inspection apparatus according to claim 1, wherein among the individual electrodes of the object to be inspected, the shape of the conductive portion of at least one electrode is different from the shape of the conductive portion of the other electrode.   The inspection apparatus according to claim 2, wherein the variable mechanism is an electromagnetic solenoid provided with the probe needle.   The inspection apparatus according to claim 2, wherein the variable mechanism includes a thermally responsive member.   The inspection apparatus according to claim 2, wherein the variable mechanism includes a wire for supporting a tip end side of the probe needle and an electromagnetic solenoid for pulling up the wire.   The inspection apparatus according to claim 2, wherein the variable mechanism includes a non-circular cam that is rotatably provided in contact with the probe needle and a motor that rotates the cam.   A plurality of cams are rotatably provided for each probe needle via a shaft, and at least one of the cams has a different contact angle with the probe needle compared to the other cams. The inspection apparatus according to claim 8, wherein the inspection apparatus is disposed in   The inspection apparatus according to claim 3, wherein a difference in height position of a contact portion of the probe needle is 50 to 150 μm.   The inspection apparatus according to claim 3 or 10, wherein a shape of a tip portion of the probe needle having a lower height position of the contact portion is flattened.   The at least one electrode among the electrodes includes a conductive portion and an insulating portion, and the insulating portion is provided on a side close to a contact portion of a corresponding probe needle. Inspection device. The inspection object is an integrated circuit element having a plurality of electrodes,
The inspection apparatus according to claim 1, wherein the shape of at least one of the electrodes is different from the shape of other electrodes.   The at least one electrode among the electrodes includes a conductive portion and an insulating portion, and the insulating portion is provided in a position near a contact portion of a corresponding probe needle in the electrode. 13. The inspection apparatus according to 13.   The inspection apparatus according to claim 14, wherein a boundary between the conductive portion and the insulating portion is formed in a dogleg shape.   The inspection apparatus according to claim 14, wherein the insulating portion has a circular shape and is disposed substantially at the center of the conductive portion. Place the object to be inspected on the mounting table, move the mounting table in the up / down / left / right direction, and contact the plurality of probe needles arranged facing the mounting table with the electrodes on the testing object placed on the mounting table. In the method for inspecting an integrated circuit element for inspecting the inspection object,
The electrodes and probe needles are sequentially contacted by moving the mounting table in a state where at least one relative distance between each electrode of the object to be inspected and a contact portion of the probe needle corresponding to each electrode is different. An inspection method for an integrated circuit element, wherein the inspection is performed in a state.   When the probe table is moved to a state where the probe needle is in contact with all the electrodes of the inspection object, the inspection table is inspected in that state, and when the inspection result becomes abnormal, the table table is again described. 18. The method for inspecting an integrated circuit element according to claim 17, wherein the inspection is performed by sequentially moving the electrode and the probe needle into contact with each other by moving the probe. An integrated circuit forming step of forming integrated circuit elements on a silicon wafer substrate;
The wafer on which the integrated circuit element is formed in the integrated circuit forming step is placed on a mounting table, and at least one relative distance between each electrode of the integrated circuit element and the contact portion of the probe needle corresponding to each electrode is changed. A wafer inspection process for inspecting the electrodes and probe needles in sequential contact with each other by moving the mounting table in the state described above,
A method of manufacturing an integrated circuit element, comprising: a dicing process of cutting the wafer inspected in the wafer inspection process into integrated circuit element units. An integrated circuit element manufactured using the method for manufacturing an integrated circuit element according to claim 19.

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