JP2006121210A - High frequency switching module and wireless communication device - Google Patents

Abstract

In a high frequency selection circuit corresponding to a multiband / mode, high isolation of a bias voltage supply path and a high frequency signal path is realized.
A decoder element DEC1 for controlling two high-frequency switch elements SW1, SW2 and high-frequency switch elements SW1, SW2 is mounted on the upper surface of a dielectric multilayer substrate A in which dielectric layers and conductor layers are alternately laminated. In the high-frequency switching module, the high-frequency switch elements SW1 and SW2 and the decoder element DEC1 are arranged so that the bias voltage supply wire W2 and the high-frequency signal wire W1 do not cross each other when viewed from above.
[Selection] Figure 4

Description

  The present invention relates to a high-frequency switching module and a wireless communication device, and more particularly to a high-frequency switching module and a wireless communication device equipped with the high-frequency switching module, which are preferably used in a mobile radio terminal supporting multiband.

  In recent years, a mobile phone adopting a multiband system in which two or more communication systems are mounted in one mobile phone has been proposed. A multiband mobile phone is expected to be a highly convenient mobile phone because it can select and transmit / receive a communication system suitable for regional characteristics and purpose of use. For example, as a plurality of communication systems having different communication bands, there is a dual-band mobile phone equipped with two systems, a GSM (Global System for Mobile communication) system and a DCS (Digital Cellular System) system. Furthermore, in North America, PCS (Personal Communication Services) system using 1900 MHz band is provided in addition to GSM.

FIG. 6 is a block diagram of a high-frequency module RFM100 of a general GSM / DCS dual-band mobile phone.
The high-frequency module RFM100 includes a DCS transmission system TX, a reception system RX, a GSM transmission system TX, and a reception system RX, and two systems GSM / DCS having different frequency bands for each frequency band. A high frequency selection circuit ASM100 is provided for performing demultiplexing and switching between the transmission system TX and the reception system RX in each of the systems DCS and GSM.

  The GSM transmission system TX supplies the transmission signal amplified by the power amplification circuit AMP100 to the high frequency selection circuit ASM100 through the matching circuit MAT100 including a low-pass filter. The high frequency signal supplied to the high frequency selection circuit ASM100 is transmitted as a high frequency signal from the antenna ANT via a high frequency switch and a branching circuit. The above operation is the same for the DCS transmission system TX.

  On the other hand, the GSM reception system RX extracts a high-frequency signal received by the antenna ANT through the high-frequency selection circuit ASM100, and removes unnecessary signals near the reception band by the band-pass filter BPF300. The signal that has passed through the bandpass filter BPF300 is amplified by the RX-side low noise amplifier AMP300 and input to the signal processing system. The above operation is the same for the DCS reception system RX.

  By the way, based on future market trends, it is expected that high-quality voice and image data transmission using a mobile phone terminal will be performed. To cope with these, CDMA, which is a code division multiple access system, is used. Construction of a communication system capable of large-capacity data transmission such as (Code Division Multiple Access) and a next-generation communication system UMTS (Universal Mobile Telecommunications System) characterized by high-speed data transmission rate and multiplexing of communication channels is progressing.

Furthermore, the introduction of GPS (Global Positioning System), which receives a transmission signal from a satellite and accurately measures the position of a mobile phone, has been started, and a mobile phone compatible with these systems is desired.
Thus, in order to cope with a plurality of communication systems, it is necessary to support more bands with one module. For example, there is an increasing demand for multiband systems such as GSM850 / GSM900 / DCS / PCS / UMTS.
JP 2002-290257 A JP 2003-20W284 A

On the other hand, recently, with the aim of miniaturization and low loss, a high-frequency circuit using a semiconductor element such as a GaAs-SW (gallium arsenide switch) as a circuit for switching frequency bands and switching transmission / reception inside a high-frequency selection circuit. Switches are also being considered.
As described above, when the multi-band / mode is advanced and it is necessary to support more bands / modes with one high-frequency module, if this high-frequency switch is used, the transmission system of the communication system can be connected to a plurality of switching terminals. Alternatively, by connecting a receiving system, it can be divided into a plurality of frequency bands having different passbands, and it is possible to cope with multibanding. Furthermore, since the high frequency switch is realized by a semiconductor integrated circuit element, it can be miniaturized and the surface layer space of the mounting substrate can be reduced. Also, low power consumption can be realized.

  In general, in a high-frequency switching module in which a high-frequency switch is mounted on the top surface of a dielectric multilayer substrate, first, bonding pads formed on the surface of the high-frequency switch and the dielectric multilayer substrate are connected to each other via a wire or the like. The bonding pad on the surface of the dielectric multilayer substrate is connected to an element built in the dielectric multilayer substrate, and the built-in element is connected to an external motherboard through a terminal pad on the lower surface of the dielectric multilayer substrate.

FIG. 7 is a plan view for explaining the arrangement of the high-frequency switches SW10 and SW20 mounted on the upper surface of the conventional dielectric multilayer substrate A. FIG. In FIG. 7, DEC10 indicates a decoder circuit for controlling the switching state of the two high-frequency switches SW10 and SW20. Reference numeral 71 denotes a high-frequency signal path pattern, and 72 denotes a bias voltage supply path pattern.
In the arrangement of the high frequency switches SW10 and SW20, the bias voltage supply terminals a, b, c and d of the decoder circuit DEC10 and the bias voltage terminals a ', b', c 'and d of the high frequency switches SW10 and SW20 are arranged. In many cases, it cannot be directly connected with a wire, and the inner layer pattern 72 of the dielectric multilayer substrate A needs to be routed. This is because the conventional high frequency switches SW10 and SW20 have bonding pads arranged near the built-in switching transistors. For this reason, a high-frequency signal path (for example, 71) and a bias voltage supply path (for example, 72) at any point in a certain path from the terminals of the high-frequency switches SW10 and SW20 to the connection terminals on the surface of the dielectric multilayer substrate. May cross or close. If both paths intersect or approach each other, interference occurs between the two paths, resulting in degradation of isolation, resulting in malfunctions such as malfunction of the high frequency switch and deterioration of the characteristics of the high frequency switching module.

An object of the present invention is to prevent deterioration of isolation characteristics between paths by defining a terminal positional relationship of a high-frequency switch on a high-frequency switching module.
Furthermore, an object of the present invention is to provide a low-cost high-frequency switching module and a wireless communication device that can handle multiple bands.

  The high-frequency switching module of the present invention is a high-frequency switching module which is installed on a dielectric multilayer substrate and switches transmission paths of a plurality of communication systems having different frequency bands or communication methods, each of which includes a bias voltage input terminal and a high-frequency signal. A plurality of high-frequency switch elements having a switching terminal; and a control circuit element for controlling switching of the plurality of high-frequency switches by including a bias voltage supply terminal for supplying a bias voltage to the plurality of high-frequency switches. A first wire connecting a high-frequency signal switching terminal of the plurality of high-frequency switch elements, a transmission system or a reception system of the communication system, a bias voltage input terminal of the plurality of high-frequency switch elements, and the control A second wire connecting the bias voltage supply terminal of the circuit element; A, said first wires and second wires, characterized in that do not intersect in perspective view from above of the dielectric multilayer substrate.

In such a high-frequency switching module, since the bias voltage supply path and the high-frequency signal path do not intersect with each other, the isolation between both paths can be improved, and the malfunction of the high-frequency switch and the deterioration of the characteristics of the high-frequency switching module can be prevented.
In addition, by using a plurality of high-frequency switches, it is not necessary to newly develop a high-frequency switch compatible with multiple ports, and the design and development period of a multi-band compatible high-frequency switching module can be shortened.

In the high-frequency switching module of the present invention, each of the plurality of high-frequency switching elements is arranged substantially parallel to the long side of the control circuit element as viewed from above. With this arrangement, wiring that does not intersect the bias voltage supply path and the high-frequency signal path can be easily realized.
Also, a bias voltage supply terminal on the upper surface of the high frequency switching module, a bias voltage supply path (illustrated by reference numeral 68 in FIG. 5) to the bias voltage supply external connection terminal on the lower surface of the high frequency switching module, and the high frequency switching A high-frequency signal path (exemplified by reference numerals 65 and 66 in FIG. 5) from the high-frequency signal terminal on the top surface of the module to the high-frequency signal external connection terminal on the bottom surface of the module extends in the stacking direction of the dielectric multilayer substrate. It is desirable to have a configuration that does not cross each other in the perspective view. In such a configuration, since the bias voltage supply path and the high-frequency signal path do not intersect with each other, the isolation between the two paths can be improved, and the malfunction of the high-frequency switch and the deterioration of the characteristics of the high-frequency switching module can be prevented.

The high-frequency switch is preferably one that performs switching using a semiconductor switching element, and is realized by a semiconductor integrated circuit in which a circuit pattern is formed on a substrate mainly composed of a GaAs (gallium arsenide) compound. Is more desirable.
In addition, the wireless communication device of the present invention is a high-function, small-sized wireless communication device that supports multiband / multimode by mounting the high-frequency switching module of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
<High frequency selection circuit>
FIG. 1 is a block diagram for explaining an example of a high-frequency selection circuit of a multiband-compatible mobile phone terminal.
This high frequency selection circuit ASM1 is connected to one common antenna terminal ANT3, and is GSM850 system (850 MHz band), GSM900 system (900 MHz band), DCS system (1800 MHz band), PCS system (1900 MHz band), UMTS800 / 850 system. (850 MHz band) and UMTS2100 (2100 MHz band) are 6 circuits for switching communication systems. Hereinafter, “TX” represents a transmission system, and “RX” represents a reception system.

  The high frequency selection circuit ASM1 includes a high frequency switch SW1 for switching terminals of PCS-RX, DCS-RX, GSM850 / 900-TX, DCS / PCS-TX, GSM900-RX, GSM850-RX, UMTS800 / 850-T / RX and UMTS2100-T / RX The high frequency switch SW2 which switches each terminal is provided. The antenna input terminal ANT1 of the high frequency switch SW1 and the antenna input terminal ANT2 of the high frequency switch SW2 are both connected to the common antenna terminal ANT3.

  Further, a control circuit (hereinafter referred to as “decoder circuit”) DEC1 for controlling the switching state of the two high-frequency switches SW1 and SW2 is provided. The decoder circuit DEC1 controls the control voltage signals V1 to V4 and V5 to V8 for switching the high frequency switches SW1 and SW2 according to the combination of the switching control signals Vc1, Vc2 and Vc3 supplied to the decoder circuit DEC1, respectively. , SW2. Vdd is a power supply terminal supplied to the decoder circuit DEC1.

  Further, a low-pass filter LPF1 that attenuates harmonic components of the transmission signal in the path between the GSM850 / 900-TX and the high-frequency switch SW1, and a harmonic of the transmission signal in the path between the DCS / PCS-TX and the high-frequency switch SW1. A low-pass filter LPF2 that attenuates the component is connected. These low-pass filters LPF1 and LPF2 are filters arranged for the purpose of removing harmonics emitted from a transmission power amplifier (not shown).

FIG. 2 is a specific circuit diagram of the low-pass filters LPF1 and LPF2. The low-pass filters LPF1 and LPF2 include a distributed constant line L, a capacitor C1 connected in parallel with the distributed constant line L, and a distributed constant line. And capacitors C2 and C3 formed between the ground and the ground.
A power amplifier (not shown) is connected to the transmission system terminal TX of the high frequency switches SW1 and SW2, a low noise amplifier (not shown) is connected to the reception system terminal RX, and a duplexer is connected to the transmission / reception system terminal T / RX. (Not shown) is connected.

The high frequency switches SW1 and SW2 are formed by mounting a semiconductor element such as p-HEMT on a substrate mainly composed of GaAs (gallium arsenide) compound, Si (silicon) or Al2O3 (sapphire) to form a switching circuit pattern. It is a thing.
Similarly, the decoder circuit DEC1 is composed of an integrated circuit element or the like.
Note that the decoder circuit DEC1 shown in FIG. 1 and either or both of the high-frequency switches SW1 and SW2 may be configured by one integrated circuit element. In this way, the degree of integration increases, and the high-frequency selection circuit can be further reduced in size and power consumption.

The switching characteristics of the high frequency switches SW1 and SW2 are premised on the following characteristics.
FIG. 3A is a schematic circuit of a high-frequency switch SW1 (also SW2 is the same) including switching transistors Q1 to Q4 (generally indicated by Q), and FIG. FIG. In FIG. 3B, the horizontal axis represents the gate-source voltage Vgs, and the vertical axis represents the drain current Id. The switching transistor Q is a so-called depletion type that can be turned off by making the gate-source voltage Vgs negative.

  When all of the control voltages V1 to V4 are set to Low (0.02V) in the circuit of the above high frequency switch SW1 (same for SW2), the antenna input terminal ANT1 to each terminal (PCS-RX, DCS-RX, GSM850 / (900-TX, DCS / PCS-TX) is 8 to 9 dB, and none of the terminals can be turned off. However, if any one of the control voltages V1 to V4 is set to High (2.5 V), the terminal becomes conductive, and a significant voltage (about 1 V) appears at the antenna input terminal ANT1. This voltage is referred to herein as a “control bias voltage”.

  Next, when all the control voltages V1 to V4 are set to Low (0.02 V) and a voltage corresponding to the control bias voltage is applied to the antenna input terminal ANT1, all the terminals can be turned off. Isolation from antenna input terminal ANT1 to each terminal (PCS-RX, DCS-RX, GSM850 / 900-TX, DCS / PCS-TX) when a voltage of 1 V or more is applied as a control bias voltage is ensured to be 15 dB or more. All terminals can be turned off. Further, in this state, when any one of the control voltages V1 to V4 is set to High (2.5 V), the terminal of the high frequency switch SW1 becomes conductive.

The above phenomenon also appears in the circuit of the high frequency switch SW2.
In this high frequency selection circuit, the ANT1 terminal of the high frequency switch SW1 and the ANT2 terminal of the high frequency switch SW2 are directly connected. From this, for example, in a state where any one of the contacts of the high frequency switch SW1 is turned on, the control bias voltage of the high frequency switch SW1 is also applied to the ANT2 terminal of the high frequency switch SW2. Therefore, all the terminals of the high frequency switch SW2 can be turned off. Even when any contact of the high-frequency switch SW2 is turned on, the terminals of the high-frequency switch SW1 can all be turned off.

As described above, if any one of the contacts of the high frequency switches SW1 and SW2 is turned on, a control bias voltage can be applied to the antenna input side terminal, and other contacts including contacts of other high frequency switches can be provided. Can be turned off.
The present invention can function as one high-frequency switch by connecting the antenna input side terminals of two high-frequency switches by utilizing the characteristics of such a high-frequency switch.

Since it is possible to combine two or more existing high-frequency switches, it is no longer necessary to sequentially design and manufacture high-frequency switches with different numbers of terminals, and by sharing components, the cost, design, manufacturing period, and It becomes possible to reduce the design and manufacturing period of the high-frequency switching module using these.
Next, the operation of the high frequency selection circuit ASM1 in FIG. 1 will be described.

In FIG. 1, as described above, the antenna terminal ANT1 of the high frequency switch SW1 and the antenna terminal ANT2 of the high frequency switch SW2 are directly connected to the common antenna terminal ANT3 connected to the antenna.
When the high frequency switch SW1 connects the antenna terminal ANT1 to any of PCS-RX, DCS-RX, GSM850 / 900-TX, DCS / PCS-TX, the decoder circuit DEC1 The control content is set so that it is turned off.

The decoder circuit DEC1 has a high frequency when the high frequency switch SW2 connects the antenna terminal ANT2 to any one of GSM900-RX, GSM850-RX, UMTS800 / 850-T / RX, and UMTS2100-T / RX. The control contents are set so that all the switches SW1 are turned off.
By such control, for example, during transmission in the GSM850 system or GSM900 system, switching between the high frequency switch SW1 turns ON between GSM850 / 900-TX and ANT1, and the signal amplified from the power amplifier is It is transmitted to the common antenna terminal ANT3 connected to the antenna. At this time, since all the contacts of the high frequency switch SW2 are turned off, a part of the signal flowing from the high frequency switch SW1 to the ANT3 terminal is prevented from leaking to the circuit connected to the high frequency switch SW2 via the high frequency switch SW2. it can. Therefore, it is possible to prevent the signal level output from the antenna terminal 3 from being lowered.

  Further, for example, even during reception of the PCS system, the signal between the PCS-RX and the ANT1 is turned on, and the signal received from the antenna is transmitted to the low noise amplifier connected to the PCS-RX. At this time, since all the contacts of the high frequency switch SW2 are turned off, a part of the PCS-RX reception signal can be prevented from leaking to other circuits via the high frequency switch SW2. Accordingly, it is possible to prevent the reception level input from the antenna terminal 3 from being lowered.

For this reason, conventionally, when switching between multiband / multimode by connecting two or more high frequency switches in parallel, a branching circuit that had to be provided between the antenna terminal 3 and the high frequency switch becomes unnecessary, and the low Loss can be achieved.
<High-frequency switching module>
Next, a high frequency switching module equipped with the high frequency selection circuit will be described.

4 is a plan view of the high-frequency switching module RFM1, and FIG. 5 is a schematic cross-sectional view of the high-frequency switching module RFM1. As shown in FIG. 5, the high frequency switching module RFM1 is formed on a dielectric multilayer substrate A in which a dielectric layer and a conductor layer are laminated.
The dielectric multilayer substrate A is configured by laminating dielectric layers having the same size and shape. A conductor layer 65 having a predetermined pattern is formed between the dielectric layers. Each dielectric layer is formed with via-hole conductors 66 and 68 necessary for configuring or connecting a circuit across a plurality of layers.

  The dielectric layer is made of, for example, ceramic for low-temperature firing, and the conductor layer 65 is made of a low-resistance conductor such as copper or silver. Such a multilayer substrate is formed by a well-known multilayer ceramic technology. For example, after applying a conductive paste on the surface of a ceramic green sheet to form each of the conductor patterns constituting each circuit described above, these multilayer substrates are formed. It is formed by laminating green sheets, thermocompression bonding and firing under the required pressure and temperature.

  The upper surface of the dielectric multilayer substrate A is sealed with a sealing resin M such as an epoxy resin, and further, a signal terminal for external connection is provided on the lower surface of the dielectric multilayer substrate A near the side surface of the dielectric multilayer substrate A. A pattern 64 and a bias voltage supply terminal pattern 61 are formed as an LGA (land grid array) type electrode. The signal terminal pattern for external connection 64 includes terminals GSM850 / 900-TX, DCS / PCS-TX, PCS-RX, DCS-RX, GSM900 formed on the external substrate on which the dielectric multilayer substrate A is mounted. -It is directly connected to each terminal of RX, GSM850-RX, UMTS800 / 850-T / RX, and UMTS2100-T / RX.

  The high frequency switches SW1 and SW2 of the high frequency switching module RFM1 of the present invention are each integrated on one chip. These chips are composed of a conductive adhesive obtained by mixing an adhesive with Ag or AuSn on the upper surface of the dielectric multilayer substrate A via a die pad 67 having an area larger than the area of the chip mounting surface, or an organic resin-based adhesive. Surface mounted using a non-conductive adhesive.

Further, a part of the capacitors C, inductors L, etc. constituting the low-pass filters LPF1, LPF2 described above are provided on the upper surface of the dielectric multilayer substrate A as chip components (lumped constant elements), and the low-pass filters LPF1, LPF1, A part of the capacitor C, the inductor L, etc. constituting the LPF 2 is provided as a conductor pattern on the upper surface or inner layer of the dielectric multilayer substrate A.
Hereinafter, the wiring states of the high-frequency switches SW1 and SW2 and the decoder DEC1 will be described in detail.

A die pad 67 is formed on the top surface of the dielectric multilayer substrate A, and high frequency switches SW1 and SW2 and a decoder DEC1 are mounted thereon.
An antenna connecting wire bonding pad 60 is formed on the upper surface of the dielectric multilayer substrate A. The antenna connection wire bonding pad 60 is connected to the antenna terminals ANT1 and ANT2 through a conductor pattern.

  On the upper surface of the dielectric multilayer substrate A, a wire bonding pad 63 connected to the external connection signal terminal pattern 64 on the lower surface of the high-frequency switching module via a high-frequency signal path formed by the conductor layer 65 and the via-hole conductor 66 is provided. A wire bonding pad 62 connected to the bias voltage supply terminal pattern 61 on the lower surface of the high frequency switching module is formed through a bias voltage supply path formed by the via-hole conductor 68.

A part of the “high-frequency signal path formed of the conductor layer 65 and the via-hole conductor 66” is a chip component or a conductor pattern constituting the low-pass filters LPF1 and LPF2.
Furthermore, the high frequency signal terminals 12 to 15 and 22 to 25 formed on the surfaces of the high frequency switches SW1 and SW2 are respectively connected to the high frequency signal wire bonding pads 63 by wires W1. The antenna connection terminals 11 and 21 formed on the surfaces of the high frequency switches SW1 and SW2 are connected to the antenna connection wire bonding pads 60 by wires W1, respectively.

Also, bias voltage input terminals 31 'to 34', 41 'to 44' formed on the surfaces of the high frequency switches SW1 and SW2, and bias voltage supply terminals 31 to 34, 41 to 41 formed on the surface of the decoder DEC1. 44 are connected to each other by a wire W2.
Further, switching control signal terminals 51 to 54 formed on the surface of the decoder DEC1 are connected to the switching control signal supply wire bonding pad 62 by wires W3. These switching control signal supply wire bonding pads 62 are electrically connected to a part 61 (illustrated by hatching) of LGA terminals formed on the back surface of the dielectric dielectric multilayer substrate A through the via-hole conductors 68. It is connected to the.

  In the high-frequency switching module of this embodiment, the sides where the bias voltage supply terminals 31 to 34 and 41 to 44 to the high-frequency switches SW1 and SW2 formed on the surface of the decoder DEC1 are arranged, and the high-frequency switches SW1 and SW1 By disposing the decoder DEC1 and the high frequency switches SW1 and SW2 so that the sides on which the bias voltage input terminals 31 ′ to 34 ′ and 41 ′ to 44 ′ formed on the surface of the SW2 face each other, The bias voltage supply terminals 31 to 34 and 41 to 44 can be directly connected to the bias voltage input terminals 31 ′ to 34 ′ and 41 ′ to 44 ′ by the bonding wire W <b> 2, and the high frequency signal bonding wire W <b> 1 and the bias voltage are connected. The supply bonding wires W2 do not cross each other. Therefore, the isolation between the two paths can be improved, and malfunction and characteristic deterioration of the high frequency switching module can be prevented.

  Also, by arranging the bias voltage supply wire bonding pad 62 above the bias voltage supply external connection terminal 61 (shown by hatching), the two terminals can be directly connected only by the via-hole conductor 68. Even in the dielectric dielectric multilayer substrate A, the bias voltage supply path and the high-frequency signal path do not cross each other. Therefore, the isolation between the two paths can be improved, and malfunction and characteristic deterioration of the high frequency switching module can be prevented.

Next, a manufacturing process of the high frequency switching module RFM1 will be described.
1. Die bonding: The high frequency switches SW1 and SW2 and the IC chip of the decoder DEC1 are mounted on the die pad 67 of the dielectric multilayer substrate A. A silver paste or the like is used for fixing the IC chip.
2. Wire bonding: Two types of wire bonding are performed. An Au wire of about 25 μm is used as the wire.

(1) When connecting the IC chip and the pad electrode of the dielectric multilayer substrate A The Au ball at the tip of the Au wire is pressure-bonded to the pad electrode (Au or Al) of the IC chip, and the pad electrode of the dielectric multilayer substrate A Crimp the Au wire to In this way, the IC chip and the pad electrode of the dielectric multilayer substrate A are joined by the wires W1 and W3.
(2) When connecting IC chips to each other The Au ball at the tip of the Au wire is pressure-bonded to the pad electrode of one of the IC chips. Thereafter, an Au wire is crimped to the pad electrode of the other IC chip.

3. Resin sealing: In order to protect the IC chip and the joint, resin M is applied on the substrate so as to cover them and sealed.
Although the embodiments of the present invention have been described above, the embodiments of the present invention are not limited to the above embodiments. For example, in the description so far, the high-frequency switching module of the present invention has been configured to be mounted on a substrate of a high-frequency module including a power amplifier and the like. However, the high-frequency switching module of the present invention is not necessarily separate from the high-frequency module, and may be formed integrally with the high-frequency module. In addition, various modifications can be made within the scope of the present invention.

It is a circuit block diagram which shows an example of the high frequency selection circuit of this invention. It is a circuit diagram of the low-pass filter which comprises the high frequency selection circuit of this invention. (A) is a schematic circuit diagram of a high frequency switch, (b) is a graph which shows the basic operation | movement of the transistor which comprises a high frequency switch. It is a top view for demonstrating arrangement | positioning of the high frequency semiconductor integrated circuit element mounted in the upper surface of the dielectric dielectric multilayer substrate A of a high frequency switching module. It is a schematic sectional drawing which shows the internal structure of the high frequency switching module RFM1 which concerns on this invention. FIG. 2 is a block diagram showing a high frequency module of a GSM / DCS dual band mobile phone terminal. It is a top view for demonstrating arrangement | positioning of the high frequency semiconductor integrated circuit element mounted in the upper surface of the dielectric dielectric multilayer substrate A of the conventional high frequency switching module.

Explanation of symbols

A dielectric multilayer substrate ANT1, 2 antenna input terminal ANT3 common antenna terminal ASM1 high frequency selection circuit DEC1 decoder circuit LPF1, LPF2 low-pass filter circuit RFM1 high frequency switching module SW1, SW2 high frequency switch W1 high frequency signal path bonding wire W2 bias voltage supply path Bonding wire W3 Switching control signal path Bonding wires 12-15, 22-25 High frequency signal terminals 31'-34 ', 41'-44' Bias voltage input terminals 31-34, 41-44 Bias voltage supply terminals 51- 54 Switching control signal terminal 61, 64 LGA terminal 65 Conductor layer 67 Die pad 66, 68 Via hole conductor

Claims (6)

A high frequency switching module installed on a dielectric multilayer substrate for switching transmission paths of a plurality of communication systems having different frequency bands or communication methods,
A plurality of high-frequency switch elements each having a bias voltage input terminal and a high-frequency signal switching terminal;
A control circuit element for controlling switching of the plurality of high frequency switches by providing a bias voltage supply terminal for supplying a bias voltage to the plurality of high frequency switches;
A first wire connecting a high-frequency signal switching terminal of the plurality of high-frequency switch elements and a transmission system or a reception system of the communication system;
A second wire for connecting the bias voltage input terminal of the plurality of high-frequency switch elements and the bias voltage supply terminal of the control circuit element;
The high frequency switching module, wherein the first wire and the second wire do not intersect in a perspective view seen from above the dielectric multilayer substrate.   2. The high-frequency switching module according to claim 1, wherein each of the plurality of high-frequency switching elements is arranged substantially parallel to a long side of the control circuit element when viewed from above the high-frequency switching module.   A bias voltage supply terminal on the upper surface of the high frequency switching module, a path for supplying a bias voltage to the bias voltage supply external connection terminal on the lower surface of the high frequency switching module, and a high frequency signal for the lower surface of the module from the high frequency signal terminal on the upper surface of the high frequency switching module The high-frequency switching module according to claim 1 or 2, wherein a high-frequency signal path reaching an external connection terminal does not intersect each other in a perspective view in a stacking direction of the dielectric multilayer substrate.   The high-frequency switching module according to any one of claims 1 to 3, wherein the high-frequency switch performs switching using a semiconductor switching element.   5. The high frequency switching module according to claim 4, wherein the high frequency switch is realized by a semiconductor integrated circuit in which a circuit pattern is formed on a substrate mainly composed of a GaAs (gallium arsenide) compound.   A wireless communication device equipped with the high-frequency switching module according to any one of claims 1 to 5.

Images