JP2006102761A - Method for producing low melting point brazing clad plate - Google Patents
Method for producing low melting point brazing clad plate Download PDFInfo
- Publication number
- JP2006102761A JP2006102761A JP2004290401A JP2004290401A JP2006102761A JP 2006102761 A JP2006102761 A JP 2006102761A JP 2004290401 A JP2004290401 A JP 2004290401A JP 2004290401 A JP2004290401 A JP 2004290401A JP 2006102761 A JP2006102761 A JP 2006102761A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- low melting
- point brazing
- kovar
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005219 brazing Methods 0.000 title claims abstract description 20
- 238000002844 melting Methods 0.000 title claims abstract description 15
- 230000008018 melting Effects 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 229910000833 kovar Inorganic materials 0.000 claims abstract description 14
- 229910052737 gold Inorganic materials 0.000 claims abstract description 9
- 238000005096 rolling process Methods 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 6
- 238000005253 cladding Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 229910015363 Au—Sn Inorganic materials 0.000 abstract description 6
- 230000002411 adverse Effects 0.000 abstract description 3
- 239000000945 filler Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 description 13
- 239000000919 ceramic Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Landscapes
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
Description
本発明は、低融点ろう板材とＡｕ／Ｎｉ／Ｋｏｖａｒ／Ｎｉ／Ａｕからなる板材とを重ねて間接加熱により圧延してクラッド加工する製造方法に関する。 The present invention relates to a manufacturing method in which a low melting point brazing plate material and a plate material made of Au / Ni / Kovar / Ni / Au are stacked and rolled by indirect heating to perform cladding processing.
半導体パッケージにおいて、セラミックパケージをＫｏｖａｒ材等による封止材で気密封止するような場合、セラミックパケージの開口部周縁にろう材を積層し、その上からＫｏｖａｒ材等の封止材を搭載後、セラミックパッケージの開口部周縁を加熱圧接してろう材を溶融させてろう付けすることが行われている（例えば、特許文献１参照。）。
しかしながら、近年、半導体パッケージ分野において、８０％Ａｕ−Ｓｎに代表される難加工性の低融点ろう材が多用されるようになり、しかも、ろう付け後の高い気密性が必要とされ、ろう付けにおける加熱によりアウトガスが発生し、半導体素子に悪影響を及ぼすという問題がある。
本発明は、上記の問題点を解決するためになされたもので、ろう付け時にアウトガスの発生を防ぐ手段を提供することを目的とする。
However, in recent years, in the semiconductor package field, low workability low melting point brazing materials represented by 80% Au-Sn have been frequently used, and high airtightness after brazing is required. There is a problem in that outgassing occurs due to heating in the semiconductor device, which adversely affects the semiconductor element.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide means for preventing outgassing during brazing.
そこで本発明は、低融点ろうの板材を上位にし、Ａｕ／Ｎｉ／Ｋｏｖａｒ／Ｎｉ／ＡｕもしくはＡｕ／Ｎｉ／Ｋｏｖａｒ／Ｎｉの基材を下位にしてを重ねて間接加熱により圧延してクラッド加工を施すことを特徴とする。
上記間接加熱装置は、１５０〜４００°Ｃのような比較的低い温度域のクラッド加工であり、被加工板材に対し均一な加熱が行え、しかも、被加工材の板厚が薄く、熱容量が小さい板材でも所定温度でクラッド加工が精度良く行え、高い板厚精度を有した難加工性低融点材料のクラッド板を得ることができる。
Therefore, in the present invention, the low melting point brazing plate is placed on the upper layer, the Au / Ni / Kovar / Ni / Au or Au / Ni / Kovar / Ni substrate is placed on the lower layer, and rolling is performed by indirect heating to perform cladding processing. It is characterized by giving.
The indirect heating device is a clad process in a relatively low temperature range such as 150 to 400 ° C., can uniformly heat the plate material to be processed, and has a thin plate thickness and a small heat capacity. Even a plate material can be accurately clad at a predetermined temperature, and a clad plate of a difficult-to-work low-melting-point material having high plate thickness accuracy can be obtained.
さらにくわしくは、難加工性低融点板材を加熱装置によって予備加熱後、加熱可能な圧延ロールによって圧延し、その後、被加工板材を冷却することによってクラッド加工を施すことによって高い板厚精度を有した難加工性低融点材料のクラッド薄板を得るものである。
なお、クラッド加工における予備加熱の設定温度（Ｔｇ）と圧延ロールの圧延時の設定温度（Ｔｒ）の関係は、Ｔｇ≧Ｔｒであることが望ましい。
More specifically, after preheating the difficult-to-process low melting point plate with a heating device, rolling it with a heatable rolling roll, and then performing clad processing by cooling the plate to be processed had high plate thickness accuracy. A clad thin plate of a difficult-to-work low-melting-point material is obtained.
In addition, it is desirable that the relationship between the set temperature (Tg) for preheating in the clad processing and the set temperature (Tr) during rolling of the rolling roll is Tg ≧ Tr.
つまり、クラッド加工時にＴｇ＜Ｔｒの設定で加工を行うと、過剰な圧延ロールの熱が被加工板材に負荷され、クラッド板形状に反りの発生等の悪影響をおよぼすからである。
また、必要に応じて、予備加熱に、非酸化性ガスを導入することによって８０％Ａｕ−Ｓｎのような加熱により酸化され易い材料において加熱による酸化を防止することができる。
That is, if the processing is performed at the setting of Tg <Tr at the time of the cladding processing, excessive heat of the rolling roll is applied to the processed plate material and adversely affects the shape of the cladding plate such as warpage.
Further, if necessary, by introducing a non-oxidizing gas in the preheating, oxidation due to heating can be prevented in a material that is easily oxidized by heating, such as 80% Au—Sn.
これにより、本発明による低融点ろうクラッド材は、アウトガス発生の問題はなく、反りやわれ等の発生もないという効果が得られる。 Thereby, the low melting point brazing clad material according to the present invention has an effect that there is no problem of outgas generation, and there is no occurrence of warping or cracking.
以下に、図面を参照して本発明の実施例を説明する。
図１は本発明の実施例を示す説明図である。
１はガイド兼用の下部加熱装置であり、本実施例では５０ｍｍのガイド幅を有した長さ１，０００ｍｍとしてある。
２はガイド兼用の上部加熱装置であり、本実施例では６０ｍｍのガイド幅を有した長さ１，０００ｍｍとしてある。
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is an explanatory view showing an embodiment of the present invention.
Reference numeral 1 denotes a lower heating device that also serves as a guide. In this embodiment, the length is 1,000 mm with a guide width of 50 mm.
Reference numeral 2 denotes an upper heating device that also serves as a guide. In this embodiment, the length is 1,000 mm with a guide width of 60 mm.
上記両加熱装置１、２とを幅方向の中心を合わせ、下流端で両加熱装置の端部を多少前後方向にずらして設置してある、本実施例では下部加熱装置１の端部の方が下流側に位置しており、ここに後述する基材を通し、上部加熱装置２には後述する板材を通す。１ａ、２ａは両加熱装置１、２のそれぞれのガス導入口である。
なお、板材を上部加熱装置２を通すようにした理由は、軟質材である板材を上位である上部加熱装置２を通して下位の基材上に載せるように配置することによって板材が基材上の正しい位置に設置することができるようにするためである。
Both the heating devices 1 and 2 are aligned with the center in the width direction, and the ends of both heating devices are slightly shifted in the front-rear direction at the downstream end. Is positioned on the downstream side, and a substrate described later is passed through here, and a plate member described later is passed through the upper heating device 2. Reference numerals 1a and 2a denote gas inlets of the heating devices 1 and 2, respectively.
The reason why the plate material is passed through the upper heating device 2 is that the plate material is correct on the base material by placing the soft plate material on the lower base material through the upper heating device 2 as the upper material. This is so that it can be installed at a position.
３は両加熱装置間の熱遮断板である。
４Ａ、４Ｂはヒータを内蔵した圧延ロールであり、本実施例では胴径５０ｍｍ、胴長１００ｍｍとしてある。両加熱装置の下流側に設けてある。
５は冷却装置であり、本実施例では幅７０ｍｍ、長さ５００ｍｍとしてある。圧延ロール４Ａ、４Ｂの下流側に設けてある。
Reference numeral 3 denotes a heat shield plate between the two heating devices.
4A and 4B are rolling rolls with a built-in heater. In this embodiment, the cylinder diameter is 50 mm and the cylinder length is 100 mm. It is provided downstream of both heating devices.
A cooling device 5 has a width of 70 mm and a length of 500 mm in this embodiment. It is provided on the downstream side of the rolling rolls 4A and 4B.
このような装置において、両加熱装置１、２の温度を２２０°Ｃとし、圧延ロールの温度を２００°Ｃとする。
また、両加熱装置１、２には本実施例ではＮ２ガスを１５リットル／ｍｉｎにて導入して被加工板材の酸化を防止する。
そこで、下部加熱装置１には、Ａｕ／Ｎｉ／Ｋｏｖａｒ／Ｎｉ／Ａｕからなる板幅６０ｍｍ、板厚０．２ｍｍの基材６を供給する。なお、後述する８０％Ａｕ−Ｓｎのような金系の低融点ろう材をクラッド加工する場合には、十分な接合を得るためにＡｕ層が必要であるが、クラッド面側でない面には必ずしもＡｕ層は必須ではないために、Ａｕ／Ｎｉ／Ｋｏｖａｒ／Ｎｉ材でもよい。
In such an apparatus, the temperature of both the heating apparatuses 1 and 2 shall be 220 degreeC, and the temperature of a rolling roll shall be 200 degreeC.
Further, in this embodiment, N 2 gas is introduced at 15 liters / min into both the heating devices 1 and 2 to prevent oxidation of the plate material to be processed.
Therefore, the lower heating device 1 is supplied with a substrate 6 made of Au / Ni / Kovar / Ni / Au and having a plate width of 60 mm and a plate thickness of 0.2 mm. Note that when a gold-based low melting point brazing material such as 80% Au—Sn described later is clad, an Au layer is necessary to obtain sufficient bonding, but the surface is not necessarily on the side of the clad surface. Since the Au layer is not essential, an Au / Ni / Kovar / Ni material may be used.
また、上部加熱装置２には、８０％Ａｕ−Ｓｎからなる板幅５０ｍｍ、板厚０．０５ｍｍからなる低融点ろう材としての板材７を供給する。
これによって、板幅６０ｍｍ、板厚０．１ｍｍからなるクラッド材を得た。
比較として、上記実施例と同形状の厚さ、幅にて８０％Ａｕ−ＳｎのメッキをＡｕ／Ｎｉ／Ｋｏｖａｒ／Ｎｉ／Ａｕ上に施し、それぞれ半導体パッケージ用のプレス加工を施し、実装して不良数をもって比較した。その結果を表１に示す。
The upper heating device 2 is supplied with a plate material 7 as a low melting point brazing material having a plate width of 50 mm made of 80% Au—Sn and a plate thickness of 0.05 mm.
As a result, a clad material having a plate width of 60 mm and a plate thickness of 0.1 mm was obtained.
For comparison, 80% Au—Sn plating is applied on Au / Ni / Kovar / Ni / Au with the same thickness and width as in the above example, and each semiconductor package is pressed and mounted. Comparison was made with the number of defects. The results are shown in Table 1.
１ 下部加熱装置
２ 上部加熱装置
３ 熱遮断板
４Ａ、４Ｂ 圧延ロール
５ 冷却装置
６ 基材
７ 板材
DESCRIPTION OF SYMBOLS 1 Lower heating apparatus 2 Upper heating apparatus 3 Heat insulation board 4A, 4B Rolling roll 5 Cooling apparatus
6 Base material 7 Plate material
Claims (3)
3. The method for producing a low melting point brazing clad material according to claim 2, wherein the relationship between the set temperature (Tg) of the vertical heating device and the set temperature (Tr) of the rolling roll is set to Tg ≧ Tr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004290401A JP4471208B2 (en) | 2004-10-01 | 2004-10-01 | Manufacturing method of low melting point brazing clad material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004290401A JP4471208B2 (en) | 2004-10-01 | 2004-10-01 | Manufacturing method of low melting point brazing clad material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006102761A true JP2006102761A (en) | 2006-04-20 |
| JP4471208B2 JP4471208B2 (en) | 2010-06-02 |
Family
ID=36373053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004290401A Expired - Fee Related JP4471208B2 (en) | 2004-10-01 | 2004-10-01 | Manufacturing method of low melting point brazing clad material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4471208B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170056993A1 (en) * | 2015-08-28 | 2017-03-02 | Edison Welding Institute, Inc. | Methods for assembling metallic sandwich and honeycomb structures |
| CN110026705A (en) * | 2019-03-08 | 2019-07-19 | 南昌大学 | A kind of coating and its preparation process of enhancing Sn base solder/Kovar alloy interconnection welding spot reliability |
| CN115635210A (en) * | 2022-12-23 | 2023-01-24 | 湖南湘投金天钛金属股份有限公司 | TC4 titanium alloy plate surface layer high-entropy alloy modification method |
-
2004
- 2004-10-01 JP JP2004290401A patent/JP4471208B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170056993A1 (en) * | 2015-08-28 | 2017-03-02 | Edison Welding Institute, Inc. | Methods for assembling metallic sandwich and honeycomb structures |
| US10751821B2 (en) * | 2015-08-28 | 2020-08-25 | Edison Welding Institute, Inc. | Methods for assembling metallic sandwich and honeycomb structures |
| CN110026705A (en) * | 2019-03-08 | 2019-07-19 | 南昌大学 | A kind of coating and its preparation process of enhancing Sn base solder/Kovar alloy interconnection welding spot reliability |
| CN115635210A (en) * | 2022-12-23 | 2023-01-24 | 湖南湘投金天钛金属股份有限公司 | TC4 titanium alloy plate surface layer high-entropy alloy modification method |
| CN115635210B (en) * | 2022-12-23 | 2023-06-23 | 湖南湘投金天钛金属股份有限公司 | A kind of high-entropy alloy modification method on the surface layer of TC4 titanium alloy plate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4471208B2 (en) | 2010-06-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5786569B2 (en) | Power module substrate manufacturing method | |
| CN106575639A (en) | Method for manufacturing substrate for power module | |
| CN112935443A (en) | Welding method of brittle target material | |
| JP6665664B2 (en) | Semiconductor device and manufacturing method thereof | |
| WO2017010293A1 (en) | Backing plate, sputtering target, and method for manufacturing same | |
| JP6455056B2 (en) | Manufacturing method and pressure device for power module substrate with heat sink | |
| JP2005205418A (en) | Manufacturing method of bonded structure | |
| JPH08255973A (en) | Ceramics circuit board | |
| JP2010050164A (en) | Method of manufacturing board for power module | |
| JP4471208B2 (en) | Manufacturing method of low melting point brazing clad material | |
| WO2018066414A1 (en) | Copper alloy plate for heat dissipation component, heat dissipation component, and method for manufacturing heat dissipation component | |
| CN100334701C (en) | Wafer mounting device and method | |
| TWI608550B (en) | Viscous crystal device and method | |
| JP2009272647A (en) | Method for manufacturing of circuit board | |
| JP2012227362A (en) | Power module substrate unit with heat sink and manufacturing method thereof | |
| JP2015076551A (en) | Power module substrate with heat sink and manufacturing method thereof | |
| JP5798212B2 (en) | Method and apparatus for adjusting substrate warpage | |
| TWI598929B (en) | A method of manufacturing a power module substrate | |
| JP6152626B2 (en) | Power module substrate manufacturing method | |
| JP2017123373A (en) | Insulating substrate and manufacturing method thereof | |
| CN106356308A (en) | Die bonding to a board | |
| JP5388697B2 (en) | Multi-circuit board, circuit board, and module using the same | |
| JP2011210745A (en) | Substrate for power module, and method of manufacturing the same | |
| JP4699734B2 (en) | Rolling equipment | |
| JP6422294B2 (en) | Manufacturing method of electronic module substrate and electronic module substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070927 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091021 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091117 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100115 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100216 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100225 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130312 Year of fee payment: 3 |
|
| R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140312 Year of fee payment: 4 |
|
| LAPS | Cancellation because of no payment of annual fees |