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JP2006196879A5 - - Google Patents

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Publication number
JP2006196879A5
JP2006196879A5 JP2005355668A JP2005355668A JP2006196879A5 JP 2006196879 A5 JP2006196879 A5 JP 2006196879A5 JP 2005355668 A JP2005355668 A JP 2005355668A JP 2005355668 A JP2005355668 A JP 2005355668A JP 2006196879 A5 JP2006196879 A5 JP 2006196879A5
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JP
Japan
Prior art keywords
layer
substance
semiconductor device
manufacturing
rough surface
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Application number
JP2005355668A
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Japanese (ja)
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JP2006196879A (en
JP4700484B2 (en
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Priority to JP2005355668A priority Critical patent/JP4700484B2/en
Priority claimed from JP2005355668A external-priority patent/JP4700484B2/en
Publication of JP2006196879A publication Critical patent/JP2006196879A/en
Publication of JP2006196879A5 publication Critical patent/JP2006196879A5/ja
Application granted granted Critical
Publication of JP4700484B2 publication Critical patent/JP4700484B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (7)

導電性材料を含む組成物に対するぬれ性の低い領域およびぬれ性の高い領域が形成された粗面を有する層上に、前記組成物を吐出することを特徴とする半導体装置の作製方法。 The layer on having low wettability regions and j is highly regions rough face formed for compositions comprising an electrically conductive material, a method for manufacturing a semiconductor device characterized by ejecting the composition. 絶縁性材料を含む組成物に対するぬれ性の低い領域およびぬれ性の高い領域が形成された粗面を有する層上に、前記組成物を吐出することを特徴とする半導体装置の作製方法。 The method for manufacturing a semiconductor device, characterized in that the layer on having low wettability regions and j is highly regions rough face formed for compositions comprising an insulation material, ejecting the composition. 粗面を有する層上に、ぬれ性が低い物質を含む膜を形成し、
前記膜に選択的に光を照射することによって、前記物質が分解された領域を選択的に形成し、
前記領域が形成された粗面を有する層上に、導電性材料を含む組成物を吐出することを特徴とする半導体装置の作製方法。 Forming a film containing a substance having low wettability on a layer having a rough surface;
By selectively irradiating the film with light, a region where the substance is decomposed is selectively formed,
A method for manufacturing a semiconductor device, wherein a composition containing a conductive material is discharged over a layer having a rough surface in which the region is formed . 選択的にマスク層が形成された粗面を有する層上に、ぬれ性が低い物質を含む膜を形成し、
前記マスク層を除去した後、前記粗面を有する層上に、導電性材料を含む組成物を吐出することを特徴とする半導体装置の作製方法。 A film containing a substance having low wettability is formed over a layer having a rough surface on which a mask layer is selectively formed;
After removing the mask layer, a method for manufacturing a pre-SL in a layer onto which has a rough surface, the semiconductor device characterized by discharging a composition including a conductive material. 請求項３または請求項４において、In claim 3 or claim 4,
前記ぬれ性が低い物質は、フッ化炭素基を有する物質またはシランカップリング剤を含む物質であることを特徴とする半導体装置の作製方法。The method for manufacturing a semiconductor device, wherein the substance having low wettability is a substance having a fluorocarbon group or a substance containing a silane coupling agent. 請求項１乃至請求項５のいずれか一項において、In any one of Claims 1 thru | or 5,
前記粗面を有する層は、ガラス基板上に、酸化チタンナノ粒子を含む溶液を塗布した層であることを特徴とする半導体装置の作製方法。The layer having a rough surface is a layer in which a solution containing titanium oxide nanoparticles is applied on a glass substrate. 請求項１乃至請求項５のいずれか一項において、In any one of Claims 1 thru | or 5,
前記粗面を有する層は、ガラス基板上に、ＡｌThe layer having the rough surface is formed of Al on a glass substrate. ２2 ＯO ３3 ゾルゲル液を塗布した層であることを特徴とする半導体装置の作製方法。A method for manufacturing a semiconductor device, which is a layer coated with a sol-gel solution.
JP2005355668A 2004-12-17 2005-12-09 Method for manufacturing semiconductor device Expired - Fee Related JP4700484B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005355668A JP4700484B2 (en) 2004-12-17 2005-12-09 Method for manufacturing semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004366430 2004-12-17
JP2004366430 2004-12-17
JP2005355668A JP4700484B2 (en) 2004-12-17 2005-12-09 Method for manufacturing semiconductor device

Publications (3)

Publication Number Publication Date
JP2006196879A JP2006196879A (en) 2006-07-27
JP2006196879A5 true JP2006196879A5 (en) 2009-01-15
JP4700484B2 JP4700484B2 (en) 2011-06-15

Family

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Family Applications (1)

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JP2005355668A Expired - Fee Related JP4700484B2 (en) 2004-12-17 2005-12-09 Method for manufacturing semiconductor device

Country Status (1)

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JP (1) JP4700484B2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5110785B2 (en) * 2004-10-08 2012-12-26 株式会社半導体エネルギー研究所 Method for manufacturing display device
WO2008016029A1 (en) * 2006-07-31 2008-02-07 Nippon Soda Co., Ltd. Method for producing organic thin film by using film physical property improving process
JP5371240B2 (en) * 2006-12-27 2013-12-18 株式会社半導体エネルギー研究所 Wiring fabrication method
JP5332145B2 (en) * 2007-07-18 2013-11-06 株式会社リコー Multilayer structure, electronic device, electronic device array, and display device
JP2009026900A (en) * 2007-07-18 2009-02-05 Ricoh Co Ltd LAMINATED STRUCTURE, ELECTRONIC DEVICE, ITS MANUFACTURING METHOD, AND DISPLAY DEVICE
JP2009026901A (en) * 2007-07-18 2009-02-05 Ricoh Co Ltd Multilayer structure, electronic device, electronic device array, and display device
JP2009038185A (en) * 2007-08-01 2009-02-19 Konica Minolta Holdings Inc Forming method of conductive film pattern, wiring board, and display device
JP2009054949A (en) * 2007-08-29 2009-03-12 Seiko Instruments Inc Method for forming metal wiring
JP2010157532A (en) * 2008-12-26 2010-07-15 Hitachi Ltd Method of manufacturing semiconductor device, and semiconductor device
KR101107158B1 (en) * 2009-07-10 2012-01-25 삼성모바일디스플레이주식회사 Organic light emitting display and manufacturing method thereof
KR101107160B1 (en) 2009-07-10 2012-01-25 삼성모바일디스플레이주식회사 Organic light emitting display and manufacturing method thereof
US8617993B2 (en) * 2010-02-01 2013-12-31 Lam Research Corporation Method of reducing pattern collapse in high aspect ratio nanostructures
JP2013105797A (en) * 2011-11-11 2013-05-30 Fujifilm Corp Pattern forming method
JP2014107394A (en) * 2012-11-27 2014-06-09 Toyota Motor Corp Metalized film capacitor
KR101605884B1 (en) 2014-04-21 2016-03-24 한국과학기술원 Method for manufacturing thin film transistor using laser
WO2020158408A1 (en) * 2019-02-01 2020-08-06 富士フイルム株式会社 Organic thin-film transistor and method for producing organic thin-film transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3870562B2 (en) * 1998-07-16 2007-01-17 セイコーエプソン株式会社 Pattern forming method and pattern forming substrate manufacturing method
JP4035968B2 (en) * 2000-06-30 2008-01-23 セイコーエプソン株式会社 Method for forming conductive film pattern
JP2003076004A (en) * 2001-09-04 2003-03-14 Fuji Photo Film Co Ltd Pattern formation method
JP2004200365A (en) * 2002-12-18 2004-07-15 Konica Minolta Holdings Inc Organic thin film transistor element
JP4557755B2 (en) * 2004-03-11 2010-10-06 キヤノン株式会社 Substrate, conductive substrate, and organic field effect transistor manufacturing method

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