JP2006173360A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent generation of strain in a hole upper part and phenomenon to enlarge a hole size from a prescribed size when a hole such as a contact hole, a via hole or the like is formed. <P>SOLUTION: The manufacturing method carries out a process for forming a layer insulating film 13, a tantalum oxide film 14, an organic reflection preventing film 15, and a resist film 16 one by one on a semiconductor substrate 11; a process for forming a pattern to the resist film 16 by carrying out exposure and development, a process for performing dry etching for at least a part of the organic reflection preventing film 15 by using the resist film 16 wherein a pattern is formed as a mask; a process for depositing chloride 17 of tantalum in a side surface of at least the resist film 16 and the organic reflection preventing film 15, while dry-etching the tantalum oxide film 14; a process for performing dry etching for the layer insulating film 13 by using the chloride 17 of tantalum as a protecting film; and a process for removing the chloride 17 of tantalum by ashing. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a hole such as a contact hole or a via hole.

  Along with the rapid integration of semiconductor devices in recent years, the minimum processing dimension has been rapidly reduced. Along with the miniaturization, in the photolithography technique, it is necessary to reduce the thickness of the photoresist in order to transfer a fine pattern according to the mask.

  Further, as a technique for suppressing reflection from a base substrate to which a photoresist is applied, a technique using an antireflection film such as BARC (Bottom Anti Referective Coating) using an organic material is used. In the technique of forming fine contact holes by dry etching, the organic antireflection film and the interlayer insulating film are sequentially etched using the photoresist as a mask. However, as the thickness of the photoresist is reduced, the height of the photoresist and the film to be etched is increased. Selectivity is necessary.

  However, when dry etching the organic antireflection film and the interlayer insulating film, the shoulder of the photoresist falls due to ion sputtering. In addition, since the photoresist has a portion with locally low etching resistance, the photoresist and the organic antireflection film are locally etched in a lateral manner. As a result, distortion at the upper part of the contact hole and enlargement of the contact hole size occur, and as a result, there are problems such as defective contact resistance and short-circuiting with adjacent contact holes.

From the above problems, for example, an etching method for protecting a resist and an antireflection film by using a gas having a high deposition property such as CH ₂ F _{2 as} an etching gas is disclosed (see Patent Document 1). . Further, for example, a method of etching using a metal film as a hard mask is disclosed (see Patent Document 2).
JP 2002-198362 A JP-A-9-186100

However, in the method described in Patent Document 1, the deposited film obtained by adding CH ₂ F ₂ to the etching gas is the same as the CF-based polymer deposited during the etching of the interlayer insulating film with a normal CF-based gas. Further, since the resistance to dry etching is weak, the effect of protecting the resist and the antireflection film is not sufficient. Further, if the deposition rate of the CF-based polymer during etching is increased by adding CH ₂ F ₂ to the etching gas, the formation of the polymer becomes non-uniform and the contact holes are likely to be distorted.

  On the other hand, in the method described in Patent Document 2, it is difficult to remove the metal film used as the hard mask after the formation of the contact hole or the like. When the metal film remains locally, there is a problem that a short circuit is caused by the metal film remaining between adjacent contacts.

  In view of the above problems, the present invention provides a semiconductor device capable of preventing the occurrence of strain at the upper part of a hole and the phenomenon that the hole size increases from a predetermined size when forming a hole such as a contact hole or a via hole. It is in providing the manufacturing method of.

  In order to achieve the above object, a first method of manufacturing a semiconductor device according to the present invention includes a step of forming an interlayer insulating film on a semiconductor substrate, and a metal film or a metal on the interlayer insulating film. A step of forming an insulating film containing, a step of forming an organic antireflection film on the metal film or the insulating film containing metal, a step of forming a resist film on the organic antireflection film, and exposure And a step of forming a pattern on the resist film by performing development, and a step of dry etching at least a part of the organic antireflection film using the resist film on which the pattern is formed as a mask, In addition, while dry etching the metal film or the insulating film containing the metal, the insulating film containing the metal film or the metal at least on the side surfaces of the resist film and the organic antireflection film A step of depositing a reaction product composed of a metal halide, a step of dry-etching the interlayer insulating film using the reaction product as a protective film, and a step of removing the reaction product by ashing. It is characterized by having.

  According to the first method of manufacturing a semiconductor device of the present invention, when dry etching a metal film or an insulating film containing a metal, at least a side surface of the resist film and the organic antireflection film is a reaction made of a metal halide. By depositing the product, when the interlayer insulating film is dry-etched, the resist film and the organic antireflection film can be protected by the reaction product. As a result, contact holes are formed in the interlayer insulating film. In forming a hole such as a via hole, it is possible to prevent the occurrence of distortion at the upper part of the hole and the phenomenon that the hole size expands from a predetermined size.

In the first method for manufacturing a semiconductor device according to the present invention, the metal constituting the metal film or the insulating film containing metal is tantalum, and the etching gas used when dry etching the metal film or the insulating film containing metal is: It is a gas containing chlorine, the reaction product is made of tantalum chloride, and the gas used for ashing is preferably a gas containing CF ₄ or CHF ₃ .

In this way, when a tantalum film or an insulating film containing tantalum is dry-etched with a gas containing chlorine, a reaction product made of tantalum chloride is deposited at least on the side surfaces of the resist film and the organic antireflection film. Thus, when the interlayer insulating film is dry-etched, the resist film and the organic antireflection film can be protected by a reaction product made of tantalum chloride, and as a result, contact holes in the interlayer insulating film, In forming a hole such as a via hole, it is possible to prevent the occurrence of distortion at the upper part of the hole and the phenomenon that the hole size expands from a predetermined size. In addition, tantalum chloride can be easily removed by ashing with a gas containing CF ₄ or CHF ₃ .

In the first method for manufacturing a semiconductor device according to the present invention, the metal constituting the metal film or the metal-containing insulating film is aluminum, and the etching gas used when dry-etching the metal film or the metal-containing insulating film is: It is a gas containing fluorine, the reaction product is made of aluminum fluoride, and the gas used for ashing is preferably a gas containing Cl ₂ .

In this case, when the aluminum film or the insulating film containing aluminum is dry-etched with a gas containing fluorine, a reaction product made of aluminum fluoride is deposited on at least the side surfaces of the resist film and the organic antireflection film. Thus, when the interlayer insulating film is dry-etched, the resist film and the organic antireflection film can be protected by aluminum fluoride, and as a result, holes such as contact holes and via holes are formed in the interlayer insulating film. In forming the film, it is possible to prevent the occurrence of distortion at the upper part of the hole and the phenomenon that the hole size is expanded from a predetermined size. Moreover, the aluminum fluoride can be easily removed by ashing with a gas containing Cl ₂ .

  In the first method for manufacturing a semiconductor device according to the present invention, the metal constituting the metal film or the metal-containing insulating film is ruthenium, and the etching gas used when dry-etching the metal film or the metal-containing insulating film is: It is a gas containing chlorine, the reaction product is made of ruthenium chloride, and the gas used for ashing is preferably a gas containing oxygen.

  In this case, when a ruthenium film or an insulating film containing ruthenium is dry-etched with a gas containing chlorine, a reaction product made of ruthenium chloride is deposited at least on the side surfaces of the resist film and the organic antireflection film. When the interlayer insulating film is dry-etched, the resist film and the organic antireflection film can be protected by a reaction product made of ruthenium chloride. As a result, contact holes, vias are formed in the interlayer insulating film. In forming a hole such as a hole, it is possible to prevent the occurrence of distortion at the upper part of the hole and the phenomenon that the hole size expands from a predetermined size. Further, ruthenium chloride can be easily removed by ashing with a gas containing oxygen.

  In order to achieve the above object, a second method of manufacturing a semiconductor device according to the present invention includes a step of forming an interlayer insulating film on a semiconductor substrate, and a metal film is formed on the interlayer insulating film. A step of forming an organic antireflection film on the metal film, a step of forming a resist film on the organic antireflection film, and exposing and developing the resist film. Forming a pattern, using the resist film on which the pattern is formed as a mask, performing dry etching on at least a portion of the organic antireflection film, and using the organic antireflection film as a mask, A step of performing dry etching on at least a part of the film, a step of performing dry etching on the interlayer insulating film using the metal film as a mask, and removing the metal film by ashing. Characterized by a step of.

  According to the second method of manufacturing a semiconductor device of the present invention, when forming a hole such as a contact hole or a via hole in the interlayer insulating film by dry etching the interlayer insulating film using the metal film as a mask. In addition, it is possible to prevent the occurrence of distortion at the upper part of the hole and the phenomenon that the hole dimension is enlarged from a predetermined dimension.

  In the second method for fabricating a semiconductor device according to the present invention, the metal constituting the metal film is preferably ruthenium, and the gas used for ashing is preferably a gas containing oxygen.

  In this case, when the interlayer insulating film is dry-etched using the ruthenium film as a mask, a contact hole, a via hole, or the like is formed in the interlayer insulating film. Can be prevented from expanding from a predetermined dimension. Further, the ruthenium film can be easily removed by ashing with a gas containing oxygen.

  According to the present invention, in forming a hole such as a contact hole or a via hole in the interlayer insulating film, it is possible to prevent the phenomenon that distortion occurs at the upper part of the hole and the hole size is expanded from a predetermined size, This is extremely significant for miniaturization, high integration, high performance, and yield improvement of semiconductor devices.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First embodiment)
Hereinafter, a semiconductor device manufacturing method according to a first embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a cross-sectional view of main steps for explaining the method for manufacturing a semiconductor device according to the first embodiment of the present invention.

  In FIG. 1, 11 is a semiconductor substrate, 12 is an underlayer, 13 is an interlayer insulating film, 14 is a tantalum oxide film, 15 is an organic antireflection film, 16 is a photoresist film, and 17 is a tantalum chloride.

  First, as shown in FIG. 1A, an interlayer insulating film 13 is formed on a semiconductor substrate 11 via an underlayer 12 (for example, a silicon nitride film), and a metal (tantalum) having a thickness of, for example, 5 nm is formed thereon. A tantalum oxide film 14 which is an insulating film containing is formed. For example, a silicon oxide film can be used as the interlayer insulating film. A photoresist film 16 having a hole pattern is formed by applying a photoresist thereon and performing exposure and development. Next, the organic antireflection film 15 is etched by dry etching using the photoresist film 16 having a hole pattern as a mask. For example, etching is performed under the following conditions using an inductively coupled plasma etching apparatus.

Pressure: 1.3Pa
Source power: 1500W, bias power: 1000W
C ₅ F ₈ / Ar / CO: 25/100 / 80sccm
Next, as shown in FIG. 1B, the tantalum oxide film 14 is etched by dry etching using the photoresist film 16 and the organic antireflection film 15 as a mask. Etching is performed under the following conditions using Cl ₂ , which is a gas containing chlorine, as an etching gas, for example, using an inductively coupled plasma etching apparatus.

Pressure: 1.3Pa
Source power: 1000W, bias power: 100W
Cl ₂ : 75sccm
At this time, the tantalum chloride 17 which is a reaction product made of a halide of tantalum (metal constituting the tantalum oxide film 14) generated as an etching product has a low vapor pressure. In addition, it is deposited on the side surface of the organic antireflection film 15.

  Next, as shown in FIG. 1C, the interlayer insulating film 13 is etched under the following conditions using the photoresist film 16, the organic antireflection film 15 and the tantalum chloride 17 as a mask. For the etching, for example, an inductively coupled plasma etching apparatus is used.

Pressure: 1.3Pa
Source power: 2200W, bias power: 1800W
C ₅ F ₈ / CH ₂ F ₂ / Ar / CO: 25/5/100 / 80sccm
At this time, the tantalum chloride 17 is hardly etched when etching is performed using a gas such as C ₅ F ₈ having a high C / F ratio. It functions to prevent the side surfaces of the photoresist film 16 and the organic antireflection film 15 from being damaged by etching.

Next, as shown in FIG. 1 (d), the photoresist film 16, the organic antireflection film 15, and the tantalum chloride 17 are removed by ashing. For example, CF ₄ and O ₂ are used as the ashing gas, and ashing is performed using the inductively coupled plasma etching apparatus under the following conditions to form the contact hole 22.

Pressure: 33.3Pa
Source power: 2000W, bias power: 0W
CF ₄ / O ₂ : 10 / 200sccm
By adding CF ₄ having a low C / F ratio at the time of ashing, the tantalum chloride 17 can be easily removed. The mechanism will be described below.

FIG. 2 (a) shows the relationship between the wafer temperature and the vapor pressure of fluoride and chloride of tantalum. FIG. 2B shows the relationship between the mixing ratio of CF ₄ in the mixed gas and the etching amount of tantalum. As shown in FIG. 2 (a), tantalum chloride has a vapor pressure two orders of magnitude lower than tantalum fluoride at a wafer temperature of 100 ° C. Therefore, tantalum chloride is deposited on the resist and the organic antireflection film, and becomes a protective film during contact hole etching. Further, as shown in FIG. 2A, tantalum fluoride has a vapor pressure that is two orders of magnitude higher than that of tantalum chloride at a wafer temperature of 100 ° C. For this reason, as shown in FIG. 2 (b), tantalum etching proceeds from a CF ₄ mixing ratio of about 5% or more. From the above, tantalum chloride can be easily removed by adding 5% CF ₄ to the ashing gas as in this embodiment. Note that CHF ₃ may be used instead of CF ₄ .

  According to this embodiment, when a contact hole is etched, a strong deposited film made of tantalum chloride is formed, and the resist and the antireflection film are protected, so that the distortion at the upper part of the contact hole and the size of the contact hole are increased. Can be prevented.

(Second Embodiment)
A semiconductor device manufacturing method according to the second embodiment of the present invention will be described below with reference to the drawings.

  FIG. 3 is a cross-sectional view of main steps for explaining the method for manufacturing a semiconductor device according to the second embodiment of the present invention.

  In FIG. 3, 11 is a semiconductor substrate, 12 is an underlayer, 13 is an interlayer insulating film, 15 is an organic antireflection film, 16 is a photoresist film, 18 is an aluminum oxide film, and 19 is an aluminum fluoride.

  First, as shown in FIG. 3A, an interlayer insulating film 13 is formed on a semiconductor substrate 11 via an underlayer 12 (for example, a silicon nitride film), and a metal (aluminum) having a thickness of, for example, 5 nm is formed thereon. An aluminum oxide film 18 which is an insulating film containing is formed. For example, a silicon oxide film can be used as the interlayer insulating film. A photoresist film 16 having a hole pattern is formed by applying a photoresist thereon and performing exposure and development. Next, the organic antireflection film 15 is etched by dry etching using the photoresist film 16 having a hole pattern as a mask. For example, etching is performed under the following conditions using an inductively coupled plasma etching apparatus.

Pressure: 1.3Pa
Source power: 1500W, bias power: 1000W
C ₅ F ₈ / Ar / CO: 25/100 / 80sccm
Next, as shown in FIG. 3B, the aluminum oxide film 18 is etched by dry etching using the photoresist film 16 and the organic antireflection film 15 as a mask. As the etching gas, an etching gas mainly containing CHF ₃ that is a gas containing fluorine is used, and etching is performed under the following conditions using, for example, an inductively coupled plasma etching apparatus.

Pressure: 1.3Pa
Source power: 1000W, bias power: 100W
CHF ₃ / Ar / O ₂ : 50/80 / 20sccm
At this time, aluminum fluoride 19 which is a reaction product made of a halide of aluminum (a metal constituting the aluminum oxide film 18) generated as an etching product has a low vapor pressure. Therefore, the photoresist film 16 and the organic antireflection film are used. Deposited on the side of the film 15.

  Next, as shown in FIG. 3C, the interlayer insulating film 13 is etched under the following conditions using the photoresist film 16, the organic antireflection film 15 and the aluminum fluoride 19 as a mask. For the etching, for example, an inductively coupled plasma etching apparatus is used.

Pressure: 1.3Pa
Source power: 2200W, bias power: 1800W
C ₅ F ₈ / CH ₂ F ₂ / Ar / CO: 25/5/100 / 80sccm
At this time, the aluminum fluoride 19 is hardly etched and functions as a protective film, and the side surfaces of the photoresist film 16 and the organic antireflection film 15 can be prevented from being damaged by etching.

Next, as shown in FIG. 3D, the photoresist film 16, the organic antireflection film 15, and the aluminum fluoride 19 are removed by ashing. For example, Cl ₂ and O ₂ are used as the ashing gas, and ashing is performed using the inductively coupled plasma etching apparatus under the following conditions to form the contact hole 22.

Pressure: 33.3Pa
Source power: 2000W, bias power: 0W
Cl ₂ / O ₂ : 10 / 200sccm
The aluminum fluoride 19 can be easily removed by adding Cl ₂ during ashing. This is because the aluminum fluoride 19 becomes an aluminum chloride having a boiling point two or more orders of magnitude higher than that of the aluminum fluoride at room temperature.

  According to the present embodiment, when the contact hole is etched, a strong deposited film made of aluminum fluoride is formed, and the resist and the antireflection film are protected, so that the distortion at the upper portion of the contact hole and the enlargement of the contact hole size are increased. Can be prevented.

(Third embodiment)
A method for manufacturing a semiconductor device according to the third embodiment of the present invention will be described below with reference to the drawings.

  FIG. 4 is a cross-sectional view of main steps for explaining the method for manufacturing a semiconductor device according to the third embodiment of the present invention.

  In FIG. 4, 11 is a semiconductor substrate, 12 is a base layer, 13 is an interlayer insulating film, 15 is an organic antireflection film, 16 is a photoresist film, 20 is a ruthenium film, and 21 is a ruthenium chloride.

  First, as shown in FIG. 4A, an interlayer insulating film 13 is formed on a semiconductor substrate 11 via an underlayer 12 (for example, a silicon nitride film), and a metal film having a thickness of, for example, 5 nm is formed thereon. A ruthenium film 20 is formed. For example, a silicon oxide film can be used as the interlayer insulating film. A photoresist film 16 having a hole pattern is formed by applying a photoresist thereon and performing exposure and development. Next, the organic antireflection film 15 is etched by dry etching using the photoresist film 16 having a hole pattern as a mask. For example, etching is performed under the following conditions using an inductively coupled plasma etching apparatus.

Pressure: 1.3Pa
Source power: 1500W, bias power: 1000W
C ₅ F ₈ / Ar / CO: 25/100 / 80sccm
Next, as shown in FIG. 4B, the ruthenium film 20 is etched by dry etching using the photoresist film 16 and the organic antireflection film 15 as a mask. Etching is performed under the following conditions using Cl ₂ , which is a gas containing chlorine, as an etching gas, for example, using an inductively coupled plasma etching apparatus.

Pressure: 3Pa
Source power: 1000W, bias power: 200W
Cl ₂ : 150sccm
At this time, ruthenium chloride 21, which is a reaction product made of a halide of ruthenium (metal constituting ruthenium film 20), which is generated as an etching product, has a low vapor pressure. Therefore, photoresist film 16 and organic antireflection film are used. Deposit on 15 sides.

  Next, as shown in FIG. 4C, the interlayer insulating film 13 is etched under the following conditions using the photoresist film 16, the organic antireflection film 15 and the ruthenium chloride 21 as a mask. For the etching, for example, an inductively coupled plasma etching apparatus is used.

Pressure: 1.3Pa
Source power: 2200W, bias power: 1800W
C ₅ F ₈ / CH ₂ F ₂ / Ar / CO: 25/5/100 / 80sccm
At this time, the ruthenium chloride 21 is hardly etched and functions as a protective film, and the side surfaces of the photoresist film 16 and the organic antireflection film 15 can be prevented from being damaged by etching.

Next, as shown in FIG. 4D, the photoresist film 16, the organic antireflection film 15, and the ruthenium chloride 21 are removed by ashing. For example, the contact hole 22 is formed by performing ashing under the following conditions using O ₂ as the ashing gas and using an inductively coupled plasma etching apparatus.

Pressure: 33.3Pa
Source power: 2000W, bias power: 100W
O ₂ : 300sccm
At the time of ashing, the ruthenium chloride 21 and the ruthenium film 20 become ruthenium oxides having a very low boiling point of 40 ° C. at room temperature by oxygen ashing and can be easily removed.

  According to the present embodiment, when a contact hole is etched, a strong deposited film made of ruthenium chloride is formed, and the resist and the antireflection film are protected, so that distortion at the upper part of the contact hole and enlargement of the contact hole size are increased. Can be prevented.

(Fourth embodiment)
A semiconductor device manufacturing method according to the fourth embodiment of the present invention will be described below with reference to the drawings.

  FIG. 5 is a cross-sectional view of main steps for explaining the semiconductor device manufacturing method according to the fourth embodiment of the present invention.

  In FIG. 5, 11 is a semiconductor substrate, 12 is an underlayer, 13 is an interlayer insulating film, 15 is an organic antireflection film, 16 is a photoresist film, and 20 is a ruthenium film.

  First, as shown in FIG. 5A, an interlayer insulating film 13 is formed on a semiconductor substrate 11 via an underlayer 12 (for example, a silicon nitride film), and a metal film having a thickness of, for example, 100 nm is formed thereon. A ruthenium film 20 is formed. For example, a silicon oxide film can be used as the interlayer insulating film. A photoresist film 16 having a hole pattern is formed by applying a photoresist thereon and performing exposure and development. Next, the organic antireflection film 15 is etched by dry etching using the photoresist film 16 having a hole pattern as a mask. For example, etching is performed under the following conditions using an inductively coupled plasma etching apparatus.

Pressure: 1.3Pa
Source power: 1500W, bias power: 1000W
C ₅ F ₈ / Ar / CO: 25/100 / 80sccm
Next, as shown in FIG. 5B, the ruthenium film 20 is etched by dry etching using the photoresist film 16 and the organic antireflection film 15 as a mask. Etching is performed under the following conditions using a mixed gas of O ₂ and CF ₄ as an etching gas, for example, using an inductively coupled plasma etching apparatus.

Pressure: 3Pa
Source power: 1000W, bias power: 200W
O ₂ / CF ₄ : 200 / 10sccm
Next, as shown in FIG. 5C, the interlayer insulating film 13 is etched under the following conditions using the photoresist film 16, the organic antireflection film 15 and the ruthenium film 20 as a mask. For the etching, for example, an inductively coupled plasma etching apparatus is used.

Pressure: 1.3Pa
Source power: 2200W, bias power: 1800W
C ₅ F ₈ / CH ₂ F ₂ / Ar / CO: 25/5/100 / 80sccm
At this time, even if the side surfaces of the photoresist 16 and the organic antireflection film 15 are damaged by etching, the ruthenium film 20 functions as a hard mask, so that the side surfaces of the photoresist 16 and the organic antireflection film 15 are damaged. It is possible to prevent the shape of the contact hole 22 formed in the interlayer insulating film 13 from being affected.

Next, as shown in FIG. 5D, the photoresist film 16, the organic antireflection film 15, and the ruthenium film 20 are removed by ashing. For example, the contact hole 22 is formed by performing ashing under the following conditions using O ₂ as the ashing gas and using an inductively coupled plasma etching apparatus.

Pressure: 33.3Pa
Source power: 2000W, bias power: 100W
O ₂ : 300sccm
At the time of ashing, the ruthenium film 20 becomes an oxide of ruthenium that has a boiling point as low as 40 ° C. at room temperature by ashing with oxygen and can be easily removed. For this reason, a short circuit between contact holes due to the remaining ruthenium film 20 can be reliably prevented.

  According to the present embodiment, by using a ruthenium film as a hard mask when etching a contact hole, it is possible to prevent distortion at the top of the contact hole and enlargement of the contact hole dimension. Furthermore, the ruthenium film used as a hard mask can be easily and reliably removed, and a short circuit between contact holes can be reliably prevented.

  The method for manufacturing a semiconductor device of the present invention is useful as a method for forming holes such as contact holes and via holes in a semiconductor device.

(a)-(d) is principal part process sectional drawing for demonstrating the manufacturing method of the semiconductor manufacturing apparatus which concerns on the 1st Embodiment of this invention. (a) is a diagram showing the relationship between temperature and vapor pressure of fluoride and chloride of tantalum, (b) is a relationship between the mixing ratio of CF ₄ in the mixed gas and the etching amount of tantalum in the ashing process. Illustration (a)-(d) is principal part process sectional drawing for demonstrating the manufacturing method of the semiconductor manufacturing apparatus which concerns on the 2nd Embodiment of this invention. (a)-(d) is principal part process sectional drawing for demonstrating the manufacturing method of the semiconductor manufacturing apparatus which concerns on the 3rd Embodiment of this invention. (a)-(d) is principal part process sectional drawing for demonstrating the manufacturing method of the semiconductor manufacturing apparatus which concerns on the 4th Embodiment of this invention.

Explanation of symbols

11 Semiconductor substrate
12 Underlayer
13 Interlayer insulation film
14 Tantalum oxide film
15 Organic anti-reflection coating
16 Photoresist film
17 Tantalum chloride
18 Aluminum oxide film
19 Aluminum fluoride
20 Ruthenium film
21 Ruthenium chloride
22 Contact hole

Claims (6)

Forming an interlayer insulating film on the semiconductor substrate;
Forming a metal film or an insulating film containing metal on the interlayer insulating film;
Forming an organic antireflection film on the metal film or an insulating film containing a metal;
Forming a resist film on the organic antireflection film;
Forming a pattern on the resist film by performing exposure and development; and
Using the resist film on which the pattern is formed as a mask, dry etching the at least part of the organic antireflection film; and
A reaction product comprising a metal halide constituting the metal film or the metal-containing insulating film at least on the side surfaces of the resist film and the organic antireflection film while dry-etching the metal film or the metal-containing insulating film. Depositing
Using the reaction product as a protective film, and dry etching the interlayer insulating film;
And a step of removing the reaction product by ashing. The metal constituting the metal film or the insulating film containing metal is tantalum,
The etching gas used when dry etching the metal film or the insulating film containing metal is a gas containing chlorine,
The reaction product consists of tantalum chloride,
The method for manufacturing a semiconductor device according to claim 1, wherein the gas used for the ashing is a gas containing CF ₄ or CHF ₃ . The metal constituting the metal film or the insulating film containing metal is aluminum,
The etching gas used when dry etching the metal film or the insulating film containing metal is a gas containing fluorine,
The reaction product is made of aluminum fluoride,
The method for manufacturing a semiconductor device according to claim 1, wherein the gas used for the ashing is a gas containing Cl ₂ . The metal constituting the metal film or the insulating film containing metal is ruthenium,
The etching gas used when dry etching the metal film or the insulating film containing metal is a gas containing chlorine,
The reaction product comprises ruthenium chloride,
The method for manufacturing a semiconductor device according to claim 1, wherein the gas used for the ashing is a gas containing oxygen. Forming an interlayer insulating film on the semiconductor substrate;
Forming a metal film on the interlayer insulating film;
Forming an organic antireflection film on the metal film;
Forming a resist film on the organic antireflection film;
Forming a pattern on the resist film by performing exposure and development; and
Using the resist film on which the pattern is formed as a mask, dry etching the at least part of the organic antireflection film; and
Using the organic antireflection film as a mask, performing a dry etching on at least a part of the metal film;
Using the metal film as a mask, dry etching the interlayer insulating film;
And a step of removing the metal film by ashing. The metal constituting the metal film is ruthenium,
6. The method of manufacturing a semiconductor device according to claim 5, wherein the gas used for the ashing is a gas containing oxygen.

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