JP2006173261A - Optoelectronic integrated device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an optoelectronic integrated device and a method for manufacturing the same capable of improving high frequency characteristics by reducing parasitic capacitance and parasitic resistance.
An optoelectronic integrated device 100 includes a substrate 110, a surface emitting semiconductor laser 100V provided above the substrate 110, including a first mirror 120, an active layer 122, and a second mirror 124, and a surface. A photodiode 100P provided above the light emitting semiconductor laser 100V and including at least the light absorption layer 142, and a bipolar transistor 100B provided above the substrate 110 are included. The bipolar transistor 100B includes the same semiconductor layer as each of the first mirror 120, the active layer 122, the second mirror 124, and the light absorption layer 142.
[Selection] Figure 2

Description

  The present invention relates to an optoelectronic integrated device and a method for manufacturing the same.

  In optical communication, there is known a WDM (Wavelength Division Multiplexing) method for communicating a plurality of signal lights having different wavelengths within one optical fiber. Thereby, the light from which a wavelength differs can be transmitted / received from each end surface of an optical fiber. It is also known to manufacture this transmission / reception optical element with a monolithic structure in one chip.

In order to amplify the received photocurrent, a TIA (Trans Impedance Amplifier) is required. According to the prior art, the TIA is provided on a separate chip from the optical element, and both are electrically connected by wire bonding or the like. Therefore, it is considered that parasitic capacitance and parasitic resistance are generated due to the wire length, and the high frequency characteristics are deteriorated.
JP 2000-269585 A

  An object of the present invention is to provide an optoelectronic integrated device and a method for manufacturing the same, which can improve high frequency characteristics by reducing parasitic capacitance and resistance.

(1) An optoelectronic integrated device according to the present invention comprises:
A substrate,
A surface emitting semiconductor laser provided above the substrate and including a first mirror, an active layer, and a second mirror;
A photodiode provided above the surface emitting semiconductor laser and including at least a light absorption layer;
A bipolar transistor provided above the substrate;
Including
The bipolar transistor includes the same semiconductor layer as each of the first mirror, the active layer, the second mirror, and the light absorption layer.

  According to the present invention, since the surface emitting semiconductor laser, the photodiode, and the bipolar transistor are integrated on one chip, electrical connection can be easily achieved without using wires. Therefore, not only miniaturization of the optoelectronic integrated device can be achieved, but also high frequency characteristics can be improved by reducing parasitic capacitance and parasitic resistance. The bipolar transistor includes the same semiconductor layer as each of the first mirror, the active layer, and the second mirror constituting the surface-emitting type semiconductor laser, and further includes the same semiconductor layer as the light absorption layer constituting the photodiode. Including. Therefore, the number of semiconductor components can be reduced, and the structure of the optoelectronic integrated device can be simplified.

  In the present invention, the B layer is provided above the specific A layer means that the B layer is provided directly on the A layer and the B layer via another layer on the A layer. Is provided. The same applies to the following inventions.

  Further, the same semiconductor layer means that the height level is the same and the material and the like are almost the same, and the first mirror, the active layer, the second mirror, the light absorption layer, and the like that are compared with each other. Includes the case where they are provided separately. The same applies to the following inventions.

(2) In this optoelectronic integrated device,
The photodiode may further include an upper contact layer provided above the light absorption layer.

(3) In this optoelectronic integrated device,
And further comprising first, second and third electrodes for driving the surface emitting semiconductor laser and the photodiode;
The first electrode is formed in contact with the first mirror,
The second electrode is formed in contact with the second mirror,
The third electrode may be formed in contact with the upper contact layer.

(4) In this optoelectronic integrated device,
The bipolar transistor is:
A semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
An intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A collector contact layer formed of the same semiconductor layer as the second mirror;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
May be included.

(5) In this optoelectronic integrated device,
A separation semiconductor layer is provided between the surface emitting semiconductor laser and the photodiode,
The photodiode may further include a lower contact layer provided above the isolation semiconductor layer and an upper contact layer provided above the light absorption layer.

(6) In this optoelectronic integrated device,
The uppermost layer of the second mirror, the isolation semiconductor layer, and the lower contact layer are each composed of an Al _x Ga _1-x As layer (0 ≦ x ≦ 1),
The Al composition of the isolation semiconductor layer may be greater than the Al composition of the uppermost layer of the second mirror and greater than the Al composition of the lower contact layer.

(7) In this optoelectronic integrated device,
And further comprising first, second and third electrodes for driving the surface emitting semiconductor laser and the photodiode;
The first electrode is formed in contact with the first mirror,
The second electrode is formed in contact with the second mirror, the isolation semiconductor layer, and the lower contact layer,
The third electrode may be formed in contact with the upper contact layer.

(8) In this optoelectronic integrated device,
The bipolar transistor is:
A first semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
A first intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A second semiconductor multilayer film formed of the same semiconductor layer as the second mirror;
A second intermediate semiconductor layer formed of the same semiconductor layer as the isolation semiconductor layer;
A collector contact layer formed of the same semiconductor layer as the lower contact layer;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
May be included.

(9) In this optoelectronic integrated device,
A third mirror is provided between the surface emitting semiconductor laser and the photodiode,
Of the layers constituting the unit period of the third mirror, at least one layer is a dielectric layer,
The photodiode may further include a lower contact layer provided above the third mirror and an upper contact layer provided above the light absorption layer.

(10) In this optoelectronic integrated device,
The dielectric layer is a layer containing aluminum oxide,
Of the layers constituting the unit period of the third mirror, the other layer may be an AlGaAs layer.

(11) In this optoelectronic integrated device,
And further comprising first, second, third and fourth electrodes for driving the surface emitting semiconductor laser and the photodiode,
The first electrode is formed in contact with the first mirror,
The second electrode is formed in contact with the second mirror,
The third electrode is formed in contact with the lower contact layer,
The fourth electrode may be formed in contact with the upper contact layer.

(12) In this optoelectronic integrated device,
The bipolar transistor is:
A first semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
An intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A second semiconductor multilayer film formed of the same semiconductor layer as the second mirror;
A third semiconductor multilayer film formed of the same semiconductor layer as the third mirror;
A collector contact layer formed of the same semiconductor layer as the lower contact layer;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
May be included.

(13) In this optoelectronic integrated device,
A collector electrode, a base electrode and an emitter electrode for driving the bipolar transistor;
The collector electrode is formed in contact with the collector contact layer;
The base electrode is formed in contact with the base layer,
The emitter electrode may be formed in contact with the emitter contact layer.

(14) A method of manufacturing an optoelectronic integrated device according to the present invention includes:
A method of manufacturing an optoelectronic integrated device comprising a surface emitting semiconductor laser, a photodiode provided above the surface emitting semiconductor laser, and a bipolar transistor,
(A) Growing a plurality of semiconductor layers for forming at least a first mirror, an active layer, a second mirror, and a light absorption layer above the substrate;
(B) At least the first mirror, the active layer, the second mirror, and the light absorption layer are formed by patterning, and the same as each of the first mirror, the active layer, the second mirror, and the light absorption layer. Forming the bipolar transistor with a semiconductor layer;
(C) forming electrodes for driving the surface-emitting semiconductor laser, the photodiode, and the bipolar transistor;
including.

  According to the present invention, since the surface emitting semiconductor laser, the photodiode, and the bipolar transistor are integrated on one chip, electrical connection between them can be easily achieved without using wires. Therefore, not only miniaturization of the optoelectronic integrated device can be achieved, but also high frequency characteristics can be improved by reducing parasitic capacitance and parasitic resistance. The bipolar transistor includes the same semiconductor layer as each of the first mirror, the active layer, and the second mirror constituting the surface-emitting type semiconductor laser, and further includes the same semiconductor layer as the light absorption layer constituting the photodiode. Including. Therefore, the number of semiconductor components can be reduced, and the manufacturing process of the optoelectronic integrated device can be simplified.

(15) In this method of manufacturing an optoelectronic integrated device,
In the step (a), a plurality of semiconductor layers for forming the first mirror, the active layer, the second mirror, the light absorption layer, and the upper contact layer are grown above the substrate,
In the step (b), the bipolar transistor is
A semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
An intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A collector contact layer formed of the same semiconductor layer as the second mirror;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
You may form so that it may contain.

(16) In this method of manufacturing an optoelectronic integrated device,
In the step (c),
Forming a first electrode in contact with the first mirror;
Forming a second electrode in contact with the second mirror;
Forming a third electrode in contact with the upper contact layer;
Forming a collector electrode in contact with the collector contact layer;
Forming a base electrode in contact with the base layer;
An emitter electrode may be formed in contact with the emitter contact layer.

(17) In this method of manufacturing an optoelectronic integrated device,
In the step (a), a plurality of layers for forming the first mirror, the active layer, the second mirror, the separation semiconductor layer, the lower contact layer, the light absorption layer, and the upper contact layer above the substrate. Grow the semiconductor layer,
In the step (b), the bipolar transistor is
A first semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
A first intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A second semiconductor multilayer film formed of the same semiconductor layer as the second mirror;
A second intermediate semiconductor layer formed of the same semiconductor layer as the isolation semiconductor layer;
A collector contact layer formed of the same semiconductor layer as the lower contact layer;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
You may form so that it may contain.

(18) In this method of manufacturing an optoelectronic integrated device,
The step (b) includes etching the lower contact layer with a first etchant and etching the isolation semiconductor layer with a second etchant.
The first etchant has a property that an etching rate of the lower contact layer is larger than an etching rate of the isolation semiconductor layer,
The second etchant may have a property that an etching rate of the isolation semiconductor layer is larger than an etching rate of the uppermost layer of the second mirror.

(19) In this method of manufacturing an optoelectronic integrated device,
In the step (c),
Forming a first electrode in contact with the first mirror;
Forming a second electrode in contact with the second mirror, the isolation semiconductor layer, and the lower contact layer;
Forming the third electrode in contact with the upper contact layer;
Forming a collector electrode in contact with the collector contact layer;
Forming a base electrode in contact with the base layer;
An emitter electrode may be formed in contact with the emitter contact layer.

(20) In this method of manufacturing an optoelectronic integrated device,
In the step (a), a plurality of the first mirror, the active layer, the second mirror, the third mirror, the lower contact layer, the light absorption layer, and the upper contact layer are formed above the substrate. Grow the semiconductor layer,
In the step (b), the bipolar transistor is
A first semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
An intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A second semiconductor multilayer film formed of the same semiconductor layer as the second mirror;
A third semiconductor multilayer film formed of the same semiconductor layer as the third mirror;
A collector contact layer formed of the same semiconductor layer as the lower contact layer;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
You may form so that it may contain.

(21) In this method of manufacturing an optoelectronic integrated device,
After the step (b), further comprising forming a dielectric layer by oxidizing at least one of the layers constituting the unit period in each of the third mirror and the third semiconductor multilayer film. Good.

(22) In this method of manufacturing an optoelectronic integrated device,
In the step (c),
Forming a first electrode in contact with the first mirror;
Forming a second electrode in contact with the second mirror;
Forming a third electrode in contact with the lower contact layer;
Forming a fourth electrode in contact with the upper contact layer;
Forming a collector electrode in contact with the collector contact layer;
Forming a base electrode in contact with the base layer;
An emitter electrode may be formed in contact with the emitter contact layer.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(First embodiment)
1-1. Optoelectronic Integrated Device FIG. 1 is a plan view of an optoelectronic integrated device according to a first embodiment to which the present invention is applied. 2 is a cross-sectional view taken along line II-II in FIG. The optoelectronic integrated device 100 includes a substrate 110, a surface emitting semiconductor laser 100V, a photodiode 100P, and a bipolar transistor (for example, a heterojunction bipolar transistor) 100B.

  The substrate 110 is, for example, a semiconductor substrate (for example, a GaAs substrate). In a predetermined region on the substrate 110, a surface emitting semiconductor laser 100V and a photodiode 100P are sequentially stacked, and in another predetermined region on the substrate 110, a bipolar transistor 100B is formed. The surface emitting semiconductor laser 100V, the photodiode 100P, and the bipolar transistor 100B are supported on the same substrate (same chip) and have a monolithic structure.

(1) Surface-emitting type semiconductor laser A surface-emitting type semiconductor laser 100V includes a first mirror 120 (p-type in this example), an active layer 122, and a second mirror 124 (in this example) provided from the substrate 110 side. n-type). This surface emitting semiconductor laser 100V has a vertical resonator.

The first mirror 120 is, for example, a 40-pair distributed reflection multilayer mirror in which p-type Al _0.9 Ga _0.1 As layers and p-type Al _0.15 Ga _0.85 As layers are alternately stacked. . The active layer 122 includes, for example, a quantum well structure including a GaAs well layer and an Al _0.3 Ga _0.7 As barrier layer, and the well layer includes three layers. The second mirror 124 is, for example, a 25-pair distributed reflection multilayer mirror in which n-type Al _0.9 Ga _0.1 As layers and n-type Al _0.15 Ga _0.85 As layers are alternately stacked. . The composition and the number of layers of the first mirror 120, the active layer 122, and the second mirror 124 are not limited.

  The first mirror 120 is formed in a p-type by doping with C, Zn, Mg, etc., and the second mirror 124 is formed in an n-type by doping with Si, Se, or the like. Therefore, a pin diode is formed by the p-type first mirror 120, the active layer 122 not doped with impurities, and the n-type second mirror 124.

  In addition, on the first mirror 120, the second mirror 124 and the active layer 122 are etched into a circular shape when seen in a plan view to form a columnar portion. Alternatively, a portion of the surface emitting semiconductor laser 100V from the second mirror 124 to the middle of the first mirror 120 may be a columnar portion. The columnar portion is not limited to a circular shape, and may have other shapes such as a square shape.

  Further, an insulating layer 126 is formed in a region close to the active layer 122 among the layers constituting the second mirror 124. The insulating layer 126 functions as a current constricting layer that regulates the current path. The insulating layer 126 is formed in a ring shape, for example, along the planar end of the surface emitting semiconductor laser 100V (specifically, the above-described columnar portion). The insulating layer 126 is, for example, aluminum oxide, and can be formed by oxidizing the AlGaAs layer from the side surface.

  The surface emitting semiconductor laser 100V can be driven by the first and second electrodes 170 and 172. The first electrode 170 is electrically connected to the first mirror 120 (p-type in this example), and the second electrode 172 is electrically connected to the second mirror 124 (n-type in this example).

  The first electrode 170 is formed in contact with the first mirror 120, for example, is formed on the upper surface of the first mirror 120. Of the first mirror 120, the layer having the smaller Al composition may be brought into contact with the first electrode 170. Thereby, the ohmic contact between the first electrode 170 and the first mirror 120 can be favorably achieved. Specifically, if the uppermost surface of the first mirror 120 has the smaller Al composition, the first electrode 170 is formed in any region of the uppermost surface. Alternatively, if the uppermost surface of the first mirror 120 has a larger Al composition, the electrode formation region may be etched to expose the lower Al composition, and the first electrode 170 may be formed on the exposed surface.

  As shown in FIG. 1, the first electrode 170 is formed along an end of the upper surface of the first mirror 120 (in other words, a region outside the second mirror 124). The first electrode 170 can be formed so as to surround the outer periphery of the second mirror 124 (columnar portion) as long as it does not short-circuit with other electrodes. A part of the first electrode 170 is an external terminal 170a. The external terminal 170a may be formed on an insulating layer (eg, polyimide resin layer, SiN layer) 190 provided outside the first mirror 120.

  The material of the first electrode 170 is not limited, but can be determined according to the conductivity type (p-type in this example) of the first mirror 120. For example, the first electrode 170 is made of a laminated film of Pt (or an alloy of AuZn) and Au. Can be formed.

  In the above description, the case where the first electrode 170 is in contact with the first mirror 120 has been described. However, as a modification, the first electrode 170 may be formed in contact with the substrate 110. For example, the first electrode 170 may be formed on the back surface of the substrate 110 (the surface opposite to the first mirror 120).

  The second electrode 172 is formed in contact with the second mirror 124, for example, is formed on the upper surface of the second mirror 124. Similarly to the first electrode 170, the second electrode 172 may be brought into contact with the layer having the smaller Al composition in the second mirror 124.

  As shown in FIG. 1, the second electrode 172 is formed along the end of the upper surface of the second mirror 124 (in other words, the region outside the light absorption layer 142). The second electrode 172 can be formed so as to surround the outer periphery of the light absorption layer 142 as long as it does not short-circuit with other electrodes. At least the area surrounded by the second electrode 172 in the second mirror 124 is a light path. A part of the second electrode 172 is an external terminal 172a. The external terminal 172a may be formed on an insulating layer (eg, polyimide resin layer, SiN layer) 192 provided outside the second mirror 124.

  The material of the second electrode 172 is not limited, but can be determined according to the conductivity type (in this example, n-type) of the second mirror 124. For example, the second electrode 172 is made of an AuGe alloy (or Ge) and Au laminated film. Can be formed.

  In the present embodiment, the second electrode 172 is also an electrode for driving the photodiode 100P. That is, the second electrode 172 is a common electrode for the surface emitting semiconductor laser 100V and the photodiode 100P, and has a three-terminal structure as a whole.

  The materials of the first and second electrodes 170 and 172 are not limited to those described above. From the viewpoint of enhancing adhesion and preventing diffusion, metals such as Cr, Ti, Ni, Au, and Pt, and these An alloy or the like may be used. The same applies to the electrodes described below.

(2) Photodiode The photodiode 100P includes a light absorption layer 142 and an upper contact layer 144 (p-type in this example) provided from the surface emitting semiconductor laser 100V side. The photodiode 100 </ b> P has an optical surface 145 on the upper surface of the upper contact layer 144. The optical surface 145 is a light incident surface of the photodiode 100P, and is also a light emitting surface of the surface emitting semiconductor laser 100V.

  The light absorbing layer 142 is formed of a GaAs layer not doped with impurities, and the upper contact layer 144 is formed of a p-type GaAs layer. The upper contact layer 144 is formed in a p-type by doping with C, Zn, Mg or the like. A second mirror 124 (n-type in this example) is provided on the base of the light absorption layer 142. That is, a pin diode is formed by the p-type upper contact layer 144, the light absorption layer 142 not doped with impurities, and the n-type second mirror 124. In addition, when the upper photodiode 100P is used as a light receiving element and the light source wavelength of the transmitted signal is included in the reflection wavelength band of the second mirror 124, the second mirror that is the base of the light absorption layer 142 Since 124 functions as a distributed Bragg reflection type mirror, the light incident from the optical surface 145 is reflected by the second mirror 124, whereby the light receiving efficiency to the light absorption layer 142 can be improved. Note that the second mirror 124 also functions as a lower contact layer of the photodiode 100P.

  In addition, a portion of the photodiode 100P from the upper contact layer 144 to the light absorption layer 142 is etched into a circular shape when viewed from the upper surface of the upper contact layer 144 to form a columnar portion. The columnar portion is not limited to a circular shape, and may have other shapes such as a square shape.

  The photodiode 100P can be driven by the second and third electrodes 172 and 174. The second electrode 172 is electrically connected to the second mirror 124 (n-type in this example), and the third electrode 174 is electrically connected to the upper contact layer 144 (p-type in this example). The details of the second electrode 172 are as described in the above (1).

  The third electrode 174 is formed in contact with the upper contact layer 144, and is formed on the upper surface of the upper contact layer 144, for example. As shown in FIG. 1, the third electrode 174 is formed along the edge of the upper surface of the upper contact layer 144. The third electrode 174 is formed in a ring shape so as to surround the central portion of the upper surface of the upper contact layer 144. In the upper surface of the upper contact layer 144, the region surrounded by the third electrode 174 is an optical surface 145.

  The material of the third electrode 174 is not limited, but can be determined according to the conductivity type (n-type in this example) of the upper contact layer 144. For example, from the laminated film of AuGe alloy (or Ge) and Au Can be formed.

  In the stacked body of the surface emitting semiconductor laser 100V and the photodiode 100P described above, the first mirror 120 (p-type), the active layer 122, the second mirror 124 (n-type), the light absorption layer 142, and the upper contact layer 144 (p As a whole, a pnp structure is configured. Note that the active layer 122 (or the light absorption layer 142) not doped with impurities is not only a layer provided separately as described above, but also a layer including a pn junction interface (for example, a depletion layer). Including.

  The photodiode 100P functions as a light receiving element that receives external light (light incident from above). In addition, the photodiode 100P has a function of monitoring the output of light generated by the surface emitting semiconductor laser 100V. Specifically, the photodiode 100P converts the light generated by the surface emitting semiconductor laser 100V into a current, and detects the output value of the light generated by the surface emitting semiconductor laser 100V based on this current value. The detection result is fed back to the surface-emitting type semiconductor laser 100V, whereby the value of the current flowing through the surface-emitting type semiconductor laser 100V (that is, the light output value) can be controlled to a constant value.

(3) Bipolar Transistor The bipolar transistor 100B includes the same semiconductor layer as each of the surface emitting semiconductor laser 100V and the photodiode 100P. The same semiconductor layer means that the material, composition ratio, conductivity type (impurity concentration), and number of layers are substantially the same.

  In the example shown in FIG. 2, the bipolar transistor 100B includes a semiconductor multilayer film 150, an intermediate semiconductor layer 152, a collector contact layer 154, a collector layer 162, a base layer 164, and an emitter layer provided from the substrate 110 side. 166 and an emitter contact layer 168. Each of the semiconductor layers from the semiconductor multilayer film 150 to the base layer 164 is the same as one of the semiconductor layers of the stacked body of the surface emitting semiconductor laser 100V and the photodiode 100P.

  The semiconductor multilayer film 150 is formed of the same semiconductor layer as the first mirror 120 (for example, a p-type AlGaAs layer), the intermediate semiconductor layer 152 is formed of the same semiconductor layer as the active layer 122, and the collector contact layer 154 includes The second mirror 124 is formed of the same semiconductor layer (for example, an n-type AlGaAs layer). The details are as described in the above (1). Note that since the bipolar transistor 100B does not contribute to light emission, it does not matter whether the same insulating layer as the insulating layer 126 functioning as a current constricting layer is present.

  The collector layer 162 is formed of the same semiconductor layer as the light absorption layer 142 (for example, a GaAs layer not doped with impurities), and the base layer 164 is the same semiconductor layer as the upper contact layer 144 (for example, p-type GaAs). Layer). The details are as described in the above (2).

  The emitter layer 166 is formed of, for example, an n-type AlGaAs layer, and the emitter contact layer 168 is formed of, for example, an n-type GaAs layer.

  In the bipolar transistor 100B described above, the n-type emitter layer 166, the p-type base layer 164, the collector layer 162 not doped with impurities, and the n-type collector contact layer 154 constitute a bipolar transistor having an npin structure. ing. In this example, the semiconductor multilayer film 150, the intermediate semiconductor layer 152, and the collector contact layer 154 have the same planar shape, the collector layer 162 and the base layer 164 have the same planar shape, and the emitter layer 166 and the emitter contact layer. 168 have the same planar shape. The collector layer 162 is formed so as to expose a part of the upper surface of the collector contact layer 154, and the emitter layer 166 is formed so as to expose a part of the upper surface of the base layer 164.

  In the above example, the case where the semiconductor layers having the collector, base, and emitter functions are stacked from the substrate 110 side has been described. However, as a modification, the semiconductor layer having the emitter, base, and collector functions from the substrate 110 side. May be laminated.

  The bipolar transistor 100B can be driven by the collector electrode 180, the base electrode 182 and the emitter electrode 184. The collector electrode 180 is formed to be electrically connected to the collector contact layer 154 (n-type in this example), and the base electrode 182 is formed to be electrically connected to the base layer 164 (p-type in this example). The emitter electrode 184 is formed in electrical connection with the emitter contact layer 168 (n-type in this example).

  The collector electrode 180 is formed in contact with the collector contact layer 154 and is formed on the upper surface of the collector contact layer 154, for example. The base electrode 182 is formed in contact with the base layer 164 and is formed on the upper surface of the base layer 164, for example. The emitter electrode 184 is formed in contact with the emitter contact layer 168, and is formed, for example, on the upper surface of the emitter contact layer 168. For example, in the plan view of the bipolar transistor 100B, the collector electrode 180, the base electrode 182 and the emitter electrode 184 may be sequentially arranged from the surface emitting semiconductor laser 100V (photodiode 100P) side. Note that the materials of the collector electrode 180, the base electrode 182 and the emitter electrode 184 are not limited and can be determined according to the conductivity type of the semiconductor layer having the formation region, and the above-described example can be applied.

  The bipolar transistor 100B functions as an amplifier that amplifies a current generated by photoelectric-electric (OE) conversion of the photodiode 100P. Specifically, the light incident from the optical surface 145 passes through the upper contact layer 144 and reaches the light absorption layer 142, and this incident light is absorbed in the light absorption layer 142, photoexcitation occurs, and electrons and holes are generated. . Electrons move to the second electrode 172 and holes move to the third electrode 174 by an electric field applied from the outside of the element. As a result, a photocurrent flows in the direction from the second electrode 172 to the third electrode 174. And the signal by this photocurrent is inputted into base electrode 182, for example, and a photocurrent can be amplified by being outputted from a collector by bipolar transistor 100B. In FIG. 1 and FIG. 2, the wiring between the electrodes is omitted. Further, the second and third electrodes 172 and 174 for the photodiode 100P are extended to the bipolar transistor 100B side so that electrical connection can be easily achieved.

  The surface emitting semiconductor laser 100V may be controlled by the bipolar transistor 100B. For example, it may be used as an electrical switching element for switching on and off the oscillation of the surface emitting semiconductor laser 100V.

  According to the optoelectronic integrated device according to the present embodiment, the surface emitting semiconductor laser 100V, the photodiode 100P, and the bipolar transistor 100B are integrated on one chip, so that it is easy to use without using wires (for example, by wiring). The electrical connection between them can be achieved. Therefore, not only miniaturization of the optoelectronic integrated device 100 can be achieved, but also high frequency characteristics can be improved by reducing parasitic capacitance and parasitic resistance. The bipolar transistor 100B includes the same semiconductor layer as each of the first mirror 120, the active layer 122, and the second mirror 124 that constitute the surface emitting semiconductor laser 100V, and further includes a light absorption layer that constitutes the photodiode 100P. 142 and the upper contact layer 144 include the same semiconductor layer. Therefore, the number of semiconductor components can be reduced, and the structure of the optoelectronic integrated device 100 can be simplified.

  In each semiconductor described above, the p-type and n-type may be interchanged. In the above example, the AlGaAs type is described, but other material types such as GaInP type, ZnSSe type, InGaN type, AlGaN type, InGaAs type, GaInNAs type, and GaAsSb type semiconductors are selected according to the oscillation wavelength. It is also possible to use materials. Note that the AlGaAs-based one can increase the collector breakdown voltage of the bipolar transistor 100B compared to the InGaAs-based one.

1-2. Method for Manufacturing Optoelectronic Integrated Device FIGS. 3 to 7 are views showing a method for manufacturing an optoelectronic integrated device according to the first embodiment to which the present invention is applied. The method for manufacturing an optoelectronic integrated device according to the present embodiment includes forming a surface emitting semiconductor laser 100V, a photodiode 100P, and a bipolar transistor 100B.

  (1) As shown in FIG. 3, a plurality of semiconductor layers 20 to 68 are sequentially formed on a substrate 110 (for example, a GaAs substrate) by epitaxial growth. The semiconductor layer 20 is a layer for forming the first mirror 120 and the semiconductor multilayer film 150. The semiconductor layer 22 is a layer for forming the active layer 122 and the intermediate semiconductor layer 152. The semiconductor layer 24 is a layer for forming the second mirror 124 and the collector contact layer 154. The semiconductor layer 42 is a layer for forming the light absorption layer 142 and the collector layer 162. The semiconductor layer 44 is a layer for forming the upper contact layer 144 and the base layer 164. The semiconductor layer 66 is a layer for forming the emitter layer 166, and the semiconductor layer 68 is a layer for forming the emitter contact layer 168. These semiconductor materials and compositions are as described above.

  Further, when the semiconductor layer 24 for forming the second mirror 124 is grown, at least one layer in the vicinity of the active layer 122 is formed as an AlAs layer or an AlGaAs layer having an Al composition of 0.95 or more. This layer is later oxidized to form an insulating layer 126 that functions as a current confinement layer (see FIG. 2).

  The temperature at which the epitaxial growth is performed is appropriately determined depending on the growth method, the raw material, the type of the substrate 110, or the type, thickness, and carrier density of each semiconductor layer to be formed, but is generally 450 ° C. to 800 ° C. Is preferred. Further, the time required for performing the epitaxial growth is also appropriately determined in the same manner as the temperature. Further, as a method for epitaxial growth, a metal-organic vapor phase epitaxy (MOVPE) method, a molecular beam epitaxy (MBE) method, a liquid phase epitaxy (LPE) method, or the like can be used.

  (2) Next, as shown in FIG. 4, the semiconductor layers 66 and 68 are patterned to form an emitter layer 166 and an emitter contact layer 168. Specifically, a resist layer R10 patterned by photolithography technology is formed on the semiconductor layer 68, and then etching (for example, dry etching or wet etching) is performed using the resist layer R10 as a mask, and a portion covered with the resist layer R10 is formed. leave. Etching is allowed to proceed until the semiconductor layer 44 is exposed. The emitter layer 166 and the emitter contact layer 168 can be formed to have the same planar shape.

(3) Next, as shown in FIG. 5, the semiconductor layers 42 and 44 are patterned to form the light absorption layer 142, the collector layer 162, the upper contact layer 144, and the base layer 164. Specifically, a resist layer R20 is similarly formed on the semiconductor layer 44, and then etched using the resist layer R20 as a mask to leave a portion covered with the resist layer R20. Etching is allowed to proceed until the semiconductor layer 24 is exposed. For example, the AlGaAs layer having the smaller Al composition in the semiconductor layer 24 may be exposed. Therefore, a part of the semiconductor layer 24 may be further removed by etching. Specifically, the AlGaAs layer having a smaller Al composition is exposed by performing surface treatment by applying wet etching. In the wet etching, for example, a hydrogen fluoride aqueous solution or a so-called hydrofluoric acid buffer solution can be used. For example, by using a hydrofluoric acid buffer solution as an etchant, the PH change of the etchant can be reduced. As a result, the etching rate can be easily controlled. As the hydrofluoric acid buffer solution, for example, a mixed solution of a hydrogen fluoride aqueous solution (HF) and a weak alkali ammonium fluoride (NH ₄ F) can be used. The light absorption layer 142 and the collector layer 162 can be formed to have the same planar shape, and the upper contact layer 144 and the base layer 164 can be formed to have the same planar shape. it can.

  (4) Next, as shown in FIG. 6, the semiconductor layers 22 and 24 are patterned to form the active layer 122, the intermediate semiconductor layer 152, the second mirror 124, and the collector contact layer 154. Specifically, a resist layer R30 is similarly formed on the semiconductor layer 24, and then etched using the resist layer R30 as a mask to leave a portion covered with the resist layer R30. Etching is allowed to proceed until the semiconductor layer 20 is exposed. Also in this case, similarly to the above (3), for example, the AlGaAs layer having the smaller Al composition in the semiconductor layer 20 may be exposed. Therefore, a part of the semiconductor layer 20 may be further removed by etching.

  (5) If necessary, the first mirror 120 and the semiconductor multilayer film 150 are formed by patterning the lowermost semiconductor layer 20 as shown in FIG. Specifically, a resist layer R40 is similarly formed on the semiconductor layer 20, and then etched using the resist layer R40 as a mask to leave a portion covered with the resist layer R40. Etching may proceed until the substrate 110 is exposed.

  Thus, by increasing the planar shape of each semiconductor layer as approaching the substrate 110 from the above (2) to (5), an electrode formation region can be secured as necessary. Note that the order of the above-described patterning steps (2) to (5) is not limited. For example, patterning may be performed in order from the side closer to the substrate 110.

  (6) Next, the substrate 110 is put into, for example, a water vapor atmosphere at about 400 ° C., thereby oxidizing the layer having a high Al composition of the second mirror 124 from the side surface to form the insulating layer 126. The oxidation rate depends on the furnace temperature, the amount of steam supplied, the Al composition of the layer to be oxidized and the film thickness. When the surface emitting semiconductor laser 100V includes the insulating layer 126, current flows only in a portion where the insulating layer 126 is not formed (a portion not oxidized) during driving. Therefore, in the step of forming the insulating layer 126 by oxidation, the current density can be controlled by controlling the formation region of the insulating layer 126.

  (7) The first, second and third electrodes 170, 172 and 174 for driving the surface emitting semiconductor laser 100V and the photodiode 100P are formed, and the collector electrode 180 for driving the bipolar transistor 100B. A base electrode 182 and an emitter electrode 184 are formed (see FIG. 2). The formation region and material of each electrode are as described above. As a method for forming the electrode, for example, at least one conductive layer may be formed by a vacuum deposition method, a sputtering method, or a plating method, and then a part of the conductive layer may be removed by a lift-off method. After electrode formation, annealing treatment may be performed for several minutes at a temperature of about 400 ° C., for example. Note that a dry etching method may be applied instead of the lift-off method.

  Through the above steps, the optoelectronic integrated device 100 in which the surface emitting semiconductor laser 100V, the photodiode 100P, and the bipolar transistor 100B are integrated on one chip can be manufactured. According to the method for manufacturing an optoelectronic integrated device according to the present embodiment, as described above, the high frequency characteristics can be improved by reducing the parasitic capacitance and the parasitic resistance. Further, after all the semiconductor layers constituting the surface emitting semiconductor laser 100V, the photodiode 100P, and the bipolar transistor 100B are epitaxially grown on the substrate 110 at once, the patterning process of each semiconductor layer is performed. Compared with the case where the patterning process and the patterning process are alternately repeated, the manufacturing process can be simplified.

  Note that the method for manufacturing an optoelectronic integrated device according to the present embodiment includes contents that can be derived from the above description of the optoelectronic integrated device.

(Second Embodiment)
2-1. Optoelectronic Integrated Device FIG. 8 is a cross-sectional view of an optoelectronic integrated device according to a second embodiment to which the present invention is applied. The optoelectronic integrated device 200 includes a substrate 110, a surface emitting semiconductor laser 100V, a photodiode 200P, and a bipolar transistor (heterojunction bipolar transistor) 200B. In the present embodiment, an isolation semiconductor layer 230 is provided between the surface emitting semiconductor laser 100V and the photodiode 200P. The photodiode 200P includes a lower contact layer 240.

(1) Surface-emitting type semiconductor laser The surface-emitting type semiconductor laser 100V includes a first mirror 120 (n-type in this example), an active layer 122, and a second mirror 124 (in this example) provided from the substrate 110 side. p-type). Further, the first electrode 170 is formed in contact with the first mirror 120, and the second electrode 172 is formed in contact with the second mirror 124. Also in the present embodiment, the second electrodes 172 and 272 are common electrodes of the surface emitting semiconductor laser 100V and the photodiode 200P, and have a three-terminal structure as a whole. The details of the above-described embodiment can be applied to the details of the surface emitting semiconductor laser 100V.

(2) Isolation Semiconductor Layer The isolation semiconductor layer 230 is formed on the second mirror 124. That is, the isolation semiconductor layer 230 is provided between the second mirror 124 and the lower contact layer 240.

  The isolation semiconductor layer 230 functions as an etching stopper for exposing a contact surface with the second electrode 172 (for example, an AlGaAs layer having a smaller Al composition) in the second mirror 124. The isolation semiconductor layer 230 isolates both the second mirror 124 and the lower contact layer 240, and can be formed, for example, from an AlGaAs layer that is not doped with impurities. In order to function as an etching stopper, the Al composition of the isolation semiconductor layer 230 is larger than the Al composition of the uppermost layer of the second mirror 124 (for example, the AlGaAs layer having the smaller Al composition), and the lower contact layer 240 (for example, Al The Al composition of the GaAs layer having a composition of 0) is preferably larger. By utilizing the difference in Al content, the lower contact layer 240 and the isolation semiconductor layer 230 are selectively etched, and the AlGaAs layer having the smaller Al composition of the second mirror 124 is finally easily exposed. Can do. Thereby, the ohmic contact between the second electrode 172 and the second mirror can be favorably achieved, and the contact resistance can be reduced, that is, the power consumption can be reduced. In addition, since the AlGaAs layer having the lower Al composition of the second mirror 124 is less likely to be oxidized than the Al composition having the higher Al composition, the electrical connection reliability can be improved.

  The isolation semiconductor layer 230 may be formed of the same Al composition (for example, 0.9) as the AlGaAs layer having the higher Al composition in the second mirror 124. The isolation semiconductor layer 230 can be formed of a semiconductor layer (including a semiconductor layer that is not doped with impurities) having a lower impurity concentration than the second mirror 124.

(3) Photodiode The photodiode 200P includes a lower contact layer (n-type in this example) 240, a light absorption layer 142, and an upper contact layer 144 (p-type in this example) provided from the side of the isolation semiconductor layer 230. And including. The lower contact layer 240 is formed of an n-type GaAs layer. The lower contact layer 240 is formed to be n-type by doping Si, Se or the like, and the upper contact layer 144 is formed to be p-type by doping C, Zn, Mg or the like. That is, a pin diode is formed by the p-type upper contact layer 144, the light absorption layer 142 not doped with impurities, and the n-type lower contact layer 240.

  In the example shown in FIG. 8, a portion of the photodiode 200 </ b> P from the upper contact layer 144 to a part of the lower contact layer 240 is etched into a circular shape when viewed from the upper surface of the upper contact layer 144 to form a columnar portion. Has been. The columnar portion is not limited to a circular shape, and may have other shapes such as a square shape.

  The photodiode 200P can be driven by the second electrodes 172, 272 and the third electrode 174. The second electrode 172 is electrically connected to the second mirror 124 (p-type in this example), the second electrode 272 is electrically connected to the lower contact layer 240 (n-type in this example), and the third electrode 174 Are electrically connected to the upper contact layer 144 (p-type in this example). The details of the embodiment described above can be applied to the details of the second electrode 172 and the third electrode 174. The second electrode 272 is formed integrally with the second electrode 172. The second electrodes 172 and 272 are formed in contact with the second mirror 124, the isolation semiconductor layer 230, and the lower contact layer 240 as a whole. Note that the material of each electrode is not limited and can be determined according to the conductivity type of the semiconductor layer having the formation region, and the above-described example can be applied.

  In the laminated body of the surface emitting semiconductor laser 100V and the photodiode 200P described above, the first mirror 120 (n-type), the active layer 122, the second mirror 124 (p-type), the lower contact layer 240 (n-type), light absorption. The layer 142 and the upper contact layer 144 constitute an npnp structure as a whole. In this embodiment mode, the active layer 122 (or the light absorption layer 142) not doped with impurities is not only a layer provided separately as described above, but also a layer including a pn junction interface (for example, Including the case of a depletion layer.

(4) Bipolar Transistor The bipolar transistor 200B includes the same semiconductor layer as each of the surface emitting semiconductor laser 100V and the photodiode 200P. The same semiconductor layer means that the material, composition ratio, conductivity type (impurity concentration), and number of layers are substantially the same.

  In the example shown in FIG. 8, the bipolar transistor 200B includes a first semiconductor multilayer film 250, a first intermediate semiconductor layer 252, a second semiconductor multilayer film 254, and a second intermediate semiconductor layer 232 provided from the substrate 110 side. A collector contact layer 242, a collector layer 162, a base layer 164, an emitter layer 166, and an emitter contact layer 168. Each of the semiconductor layers from the first semiconductor multilayer film 250 to the base layer 164 is the same as one of the semiconductor layers of the stack of the surface emitting semiconductor laser 100V and the photodiode 200P.

  The first semiconductor multilayer film 250 is formed of the same semiconductor layer (for example, an n-type AlGaAs layer) as the first mirror 120, the first intermediate semiconductor layer 252 is formed of the same semiconductor layer as the active layer 122, and the second The semiconductor multilayer film 254 is formed of the same semiconductor layer (for example, a p-type AlGaAs layer) as the second mirror 124.

  The second intermediate semiconductor layer 232 is formed of the same semiconductor layer as the isolation semiconductor layer 230 (for example, an AlGaAs layer that is not doped with impurities). The collector contact layer 242 is formed of the same semiconductor layer (eg, n-type GaAs layer) as the lower contact layer 240, and the collector layer 162 is the same semiconductor layer as that of the light absorption layer 142 (eg, not doped with impurities). The base layer 164 is formed of the same semiconductor layer as the upper contact layer 144 (for example, a p-type GaAs layer).

  The emitter layer 166 is formed of, for example, an n-type AlGaAs layer, and the emitter contact layer 168 is formed of, for example, an n-type GaAs layer.

  In the bipolar transistor 200B described above, the n-type emitter layer 166, the p-type base layer 164, the collector layer 162 not doped with impurities, and the n-type collector contact layer 242 constitute a bipolar transistor having an npin structure. ing. In this example, the first semiconductor multilayer film 250, the first intermediate semiconductor layer 252, the second semiconductor multilayer film 254, the second intermediate semiconductor layer 232, and the collector contact layer 242 have the same planar shape. The collector layer 162 and the base layer 164 have the same planar shape, and the emitter layer 166 and the emitter contact layer 168 have the same planar shape. The collector layer 162 is formed so as to expose a part of the upper surface of the collector contact layer 242, and the emitter layer 166 is formed so as to expose a part of the upper surface of the base layer 164.

  In the above example, the case where the semiconductor layers having the collector, base, and emitter functions are stacked from the substrate 110 side has been described. However, as a modification, the semiconductor layer having the emitter, base, and collector functions from the substrate 110 side. May be laminated.

  Bipolar transistor 200B can be driven by collector electrode 280, base electrode 182 and emitter electrode 184. The collector electrode 280 is electrically connected to the collector contact layer 242 (n-type in this example). The collector electrode 280 is formed in contact with the collector contact layer 242 and is formed, for example, on the upper surface of the collector contact layer 242. Note that the contents of the above-described embodiment can be applied to the base electrode 182 and the emitter electrode 184.

2-2. Method for Manufacturing Optoelectronic Integrated Device FIGS. 9 to 10 are views showing a method for manufacturing an optoelectronic integrated device according to the second embodiment to which the present invention is applied. The method for manufacturing an optoelectronic integrated device according to the present embodiment includes forming a surface emitting semiconductor laser 100V, a photodiode 200P, and a bipolar transistor 100B.

  (1) As shown in FIG. 9, a plurality of semiconductor layers 20 to 68 are sequentially epitaxially grown on a substrate 110. In the present embodiment, in addition to the semiconductor layer described in the first embodiment, semiconductor layers 30 and 40 are further grown. The semiconductor layer 30 is a layer for forming the isolation semiconductor layer 230 and the second intermediate semiconductor layer 232. The semiconductor layer 40 is a layer for forming the lower contact layer 240 and the collector contact layer 242. Other semiconductor layers, semiconductor materials and compositions are as described above.

  (2) As shown in FIG. 10, the semiconductor layers 66 and 68 are patterned to form the emitter layer 166 and the emitter contact layer 168, and then the semiconductor layers 42 and 44 are patterned to obtain the light absorption layer 142. The collector layer 162, the upper contact layer 144, and the base layer 164 are formed. Specifically, a resist layer R50 is formed on the semiconductor layer 44, and then etched using the resist layer R50 as a mask to leave a portion covered with the resist layer R50. In that case, as shown in FIG. 10, the etching may be performed until a part of the semiconductor layer 40 is removed.

  (3) Next, as shown in FIG. 11, the lower contact layer 240 and the collector contact layer 242 are formed by patterning the semiconductor layer 40. Specifically, a resist layer R60 is formed on the semiconductor layer 40, and then etched using the resist layer R60 as a mask to leave a portion covered with the resist layer R60. Etching is allowed to proceed until the semiconductor layer 30 is exposed. This step can be performed by applying wet etching. Specifically, the semiconductor layer 40 is etched by the first etchant. Here, the first etchant has a property that the etching rate of the semiconductor layer 40 (lower contact layer 240) is larger than the etching rate of the semiconductor layer 30 (isolation semiconductor layer 230). For example, a mixed solution of ammonia, hydrogen peroxide, and water (for example, a mixing ratio of about 1: 10: 150) can be used as the first etchant. Accordingly, selective etching can be performed using the difference in Al content between both the lower contact layer 240 and the isolation semiconductor layer 230. That is, the etching can be finished accurately and easily when the semiconductor layer 30 is exposed.

  (4) Next, as shown in FIG. 12, the semiconductor layer 30 is patterned to form the isolation semiconductor layer 230 and the second intermediate semiconductor layer 232. Specifically, a resist layer R70 is formed on the semiconductor layer 30, and then etched using the resist layer R70 as a mask to leave a portion covered with the resist layer R70. Etching is allowed to proceed until the semiconductor layer 24 is exposed. This step can be performed by applying wet etching. Specifically, the semiconductor layer 30 is etched by the second etchant. Here, the second etchant has a property that the etching rate of the semiconductor layer 30 (isolation semiconductor layer 230) is larger than the etching rate of the semiconductor layer 24 (second mirror 124). For example, hydrofluoric acid (for example, a concentration of about 0.1%) can be used as the second etchant. Thus, selective etching can be performed using the difference in Al content in both the isolation semiconductor layer 230 and the uppermost layer of the second mirror 124 (for example, the AlGaAs layer having a smaller Al composition). That is, the etching can be finished accurately and easily when the semiconductor layer 24 is exposed. For the subsequent steps, the contents of the first embodiment can be applied.

  According to the method of manufacturing an optoelectronic integrated device according to the present embodiment, the semiconductor layer 30 for forming the isolation semiconductor layer 230 functions as an etching stopper, so that an ohmic contact between the second electrode 172 and the second mirror 124 is achieved. A process for achieving good results can be provided. Therefore, it is possible to improve electrical connection reliability and high frequency characteristics.

  The other details of the optoelectronic integrated device and the manufacturing method thereof according to the present embodiment include contents that can be derived from the first embodiment.

(Third embodiment)
3-1. Optoelectronic Integrated Device FIG. 13 is a plan view of an optoelectronic integrated device according to a third embodiment to which the present invention is applied. 14 is a cross-sectional view taken along line XIV-XIV in FIG. The optoelectronic integrated device 300 includes a substrate 110, a surface emitting semiconductor laser 100V, a photodiode 300P, and a bipolar transistor (for example, a heterojunction bipolar transistor) 300B. In the present embodiment, a third mirror 330 is provided between the surface emitting semiconductor laser 100V and the photodiode 300P. The photodiode 300P includes a lower contact layer 340.

(1) Surface-emitting type semiconductor laser The surface-emitting type semiconductor laser 100V includes a first mirror 120 (n-type in this example), an active layer 122, and a second mirror 124 (in this example) provided from the substrate 110 side. p-type). Further, the first electrode 170 is formed in contact with the first mirror 120, and the second electrode 172 is formed in contact with the second mirror 124. In the present embodiment, the first and second electrodes 170 and 172 are separate electrodes from the third and fourth electrodes 374 and 376 of the photodiode 300P, and have a four-terminal structure as a whole. The details of the above-described embodiment can be applied to the details of the surface emitting semiconductor laser 100V.

(2) Third Mirror The third mirror 330 is formed on the second mirror 124. The third mirror 330 is provided between the second mirror 124 and the lower contact layer 340 and has a function of electrically separating them. The third mirror 330 prevents a short circuit between the second electrode 172 of the surface-emitting type semiconductor laser 100V and the third electrode 374 of the photodiode 300P, thereby realizing a four-terminal structure of the optoelectronic integrated device 300.

The third mirror 330 is formed of a plurality of layers having different light refractive indexes, and at least one of the layers constituting the unit period is formed of a dielectric layer. The other layer constituting the unit period of the third mirror 330 may be an AlGaAs layer (for example, an AlGaAs layer having an Al composition of 0.8 or less). For example, the third mirror 330 is a five-pair distributed reflection type multilayer mirror in which Al _0.2 Ga _0.8 As layers not doped with impurities and dielectric layers are alternately stacked. The dielectric layer may be an oxide of either an AlGaAs layer or an AlAs layer (an aluminum oxide (AlO _x ) layer). If the Al composition ratio is high, it is easy to oxidize, so that the dielectric layer can be formed easily. Note that the composition and the number of layers of the third mirror 330 are not limited.

(3) Photodiode The photodiode 300P includes a lower contact layer (n-type in this example) 340, a light absorption layer 142, and an upper contact layer 144 (p-type in this example) provided from the third mirror 330 side. And including. The lower contact layer 340 is formed of an n-type GaAs layer. The lower contact layer 340 is formed in an n-type by doping Si, Se, etc., and the upper contact layer 144 is formed in a p-type by doping C, Zn, Mg, or the like. That is, a pin diode is formed by the p-type upper contact layer 144, the light absorption layer 142 not doped with impurities, and the n-type lower contact layer 340.

  In the example illustrated in FIG. 14, a portion from the upper contact layer 144 to the light absorption layer 142 in the photodiode 300 </ b> P is etched into a circular shape when viewed from the upper surface of the upper contact layer 144 to form a columnar portion. Yes. The columnar portion is not limited to a circular shape, and may have other shapes such as a square shape.

  The photodiode 300P can be driven by the third and fourth electrodes 374 and 376. The third electrode 374 is electrically connected to the lower contact layer 340 (n-type in this example), and the fourth electrode 376 is electrically connected to the upper contact layer 144 (p-type in this example). Note that the material of the third and fourth electrodes 374 and 376 is not limited and can be determined according to the conductivity type of the semiconductor layer having the formation region, and the above-described example can be applied.

  The third electrode 374 is formed in contact with the lower contact layer 340, and is formed on the upper surface of the lower contact layer 340, for example. As shown in FIG. 13, the third electrode 374 is formed along an end portion on the upper surface of the lower contact layer 340 (in other words, a region outside the light absorption layer 142). The third electrode 374 can be formed so as to surround the outer periphery of the light absorption layer 142 as long as it does not short-circuit with other electrodes. A part of the third electrode 374 serves as an external terminal 374a. The external terminal 374a may be formed on an insulating layer (eg, polyimide resin layer, SiN layer) 394 provided outside the lower contact layer 340.

  The material of the third electrode 374 is not limited, but can be determined according to the conductivity type (n-type in this example) of the lower contact layer 340. For example, from the laminated film of AuGe alloy (or Ge) and Au Can be formed.

  The fourth electrode 376 is formed in contact with the upper contact layer 144, and is formed on the upper surface of the upper contact layer 144, for example. As shown in FIG. 13, the fourth electrode 376 is formed along the edge of the upper surface of the upper contact layer 144. The fourth electrode 376 is formed in a ring shape so as to surround the central portion of the upper surface of the upper contact layer 144. In the upper surface of the upper contact layer 144, the region surrounded by the fourth electrode 376 is an optical surface 145.

  The material of the fourth electrode 376 is not limited, but can be determined according to the conductivity type (n-type in this example) of the upper contact layer 144. For example, from the laminated film of AuGe alloy (or Ge) and Au Can be formed.

  In the example shown in FIG. 13, the external terminals 170 a to 376 a of the first to fourth electrodes 170 to 376 are adjacent to each other on the substrate 110 around the surface emitting semiconductor laser 100 </ b> V (photodiode 300 </ b> P). They are equally arranged to be the same. Also, the external terminals 170a and 172a of the first and second electrodes 170 and 172 are arranged adjacent to each other, and the external terminals 374a and 376a of the third and fourth electrodes 374 and 376 are arranged adjacent to each other. Yes. In addition, it is preferable that the external terminals 374a and 376a be disposed on the bipolar transistor 300B side, since electrical connection between the photodiode 300P and the bipolar transistor 300B can be easily achieved.

  In the stacked body of the surface emitting semiconductor laser 100V and the photodiode 300P, the first mirror 120 (n-type), the active layer 122, the second mirror 124 (p-type), the third mirror 330, and the lower contact layer 340 (n Type), light absorption layer 142, and upper contact layer 144 (p-type) constitute an npnp structure as a whole. Note that the active layer 122 (or the light absorption layer 142) not doped with impurities is not only a layer provided separately as described above, but also a layer including a pn junction interface (for example, a depletion layer). Including.

  In the present embodiment, the surface emitting semiconductor laser 100V and the photodiode 300P are electrically separated by the third mirror 330 to realize a four-terminal structure. According to this, since the third mirror 330 includes a unit period including at least one dielectric layer, it can be easily formed thick (for example, 0.9 μm or more). Therefore, the parasitic capacitance between the surface emitting semiconductor laser 100V and the photodiode 300P generated by inserting the third mirror 330 can be reduced, and deterioration of the high frequency characteristics can be suppressed.

(4) Bipolar Transistor The bipolar transistor 300B includes the same semiconductor layer as each of the surface emitting semiconductor laser 100V and the photodiode 300P. The same semiconductor layer means that the material, composition ratio, conductivity type (impurity concentration), and number of layers are substantially the same.

  In the example shown in FIG. 14, the bipolar transistor 300B includes a first semiconductor multilayer film 350, an intermediate semiconductor layer 352, a second semiconductor multilayer film 354, a third semiconductor multilayer film 332, which are provided from the substrate 110 side. A collector contact layer 342, a collector layer 162, a base layer 164, an emitter layer 166, and an emitter contact layer 168 are included. Each semiconductor layer from the first semiconductor multilayer film 350 to the base layer 164 is the same as one of the semiconductor layers of the stacked body of the surface emitting semiconductor laser 100V and the photodiode 300P.

  The first semiconductor multilayer film 350 is formed of the same semiconductor layer (for example, an n-type AlGaAs layer) as the first mirror 120, and the intermediate semiconductor layer 352 is formed of the same semiconductor layer as the active layer 122. The film 354 is formed of the same semiconductor layer (for example, a p-type AlGaAs layer) as the second mirror 124.

  The third semiconductor multilayer film 332 is formed of the same semiconductor layer as the third mirror 330 (including at least one dielectric layer in the unit period). The collector contact layer 342 is formed of the same semiconductor layer (eg, n-type GaAs layer) as the lower contact layer 340, and the collector layer 162 is the same semiconductor layer (eg, not doped with impurities) as the light absorption layer 142. The base layer 164 is formed of the same semiconductor layer as the upper contact layer 144 (for example, a p-type GaAs layer).

  The emitter layer 166 is formed of, for example, an n-type AlGaAs layer, and the emitter contact layer 168 is formed of, for example, an n-type GaAs layer.

  In the bipolar transistor 300B described above, the n-type emitter layer 166, the p-type base layer 164, the collector layer 162 not doped with impurities, and the n-type collector contact layer 342 constitute a bipolar transistor having an npin structure. ing. In this example, the first semiconductor multilayer film 350, the intermediate semiconductor layer 352, the second semiconductor multilayer film 354, the second intermediate semiconductor layer 332, and the collector contact layer 342 have the same planar shape. The collector layer 162 and the base layer 164 have the same planar shape, and the emitter layer 166 and the emitter contact layer 168 have the same planar shape. The collector layer 162 is formed so as to expose a part of the upper surface of the collector contact layer 342, and the emitter layer 166 is formed so as to expose a part of the upper surface of the base layer 164.

  In the above example, the case where the semiconductor layers having the collector, base, and emitter functions are stacked from the substrate 110 side has been described. However, as a modification, the semiconductor layer having the emitter, base, and collector functions from the substrate 110 side. May be laminated.

  The bipolar transistor 300B can be driven by the collector electrode 380, the base electrode 182 and the emitter electrode 184. The collector electrode 380 is electrically connected to the collector contact layer 342 (n-type in this example). The collector electrode 380 is formed in contact with the collector contact layer 342 and is formed, for example, on the upper surface of the collector contact layer 342. Note that the contents of the above-described embodiment can be applied to the base electrode 182 and the emitter electrode 184.

  In the present embodiment, a third semiconductor multilayer film 332 including at least one dielectric layer is provided as a base for the collector contact layer 342. Therefore, the current path passing from the collector contact layer 342 through the second semiconductor multilayer film 354, the intermediate semiconductor layer 352, and the first semiconductor multilayer film 350 can be cut off, and the high frequency characteristics can be further improved.

3-2. Method for Manufacturing Optoelectronic Integrated Device FIGS. 15 to 20 are views showing a method for manufacturing an optoelectronic integrated device according to the third embodiment to which the present invention is applied. The method for manufacturing an optoelectronic integrated device according to the present embodiment includes forming a surface emitting semiconductor laser 100V, a photodiode 300P, and a bipolar transistor 300B.

  (1) As shown in FIG. 15, a plurality of semiconductor layers 20 to 68 are sequentially epitaxially grown on a substrate 110. In the present embodiment, in addition to the semiconductor layer described in the first embodiment, semiconductor layers 32 and 40 are further grown. The semiconductor layer 32 is a layer for forming the third mirror 330 and the third semiconductor multilayer film 332. The semiconductor layer 42 is a layer for forming the lower contact layer 340 and the collector contact layer 342. Other semiconductor layers, semiconductor materials and compositions are as described above.

  (2) Next, as shown in FIG. 16, the semiconductor layers 66 and 68 are patterned to form the emitter layer 166 and the emitter contact layer 168. Specifically, a resist layer R110 patterned by a photolithography technique is formed on the semiconductor layer 68, and then etching (for example, dry etching or wet etching) is performed using the resist layer R110 as a mask, so that a portion covered with the resist layer R110 is formed. leave. Etching is allowed to proceed until the semiconductor layer 44 is exposed. The emitter layer 166 and the emitter contact layer 168 can be formed to have the same planar shape.

  (3) Next, as shown in FIG. 17, the semiconductor layers 42 and 44 are patterned to form a light absorption layer 142, a collector layer 162, an upper contact layer 144, and a base layer 164. Specifically, a resist layer R120 is similarly formed on the semiconductor layer 44, and then etched using the resist layer R120 as a mask to leave a portion covered with the resist layer R120. Etching is allowed to proceed until the semiconductor layer 40 is exposed. The light absorbing layer 142 and the collector layer 162 can be formed to have the same planar shape, and the upper contact layer 144 and the base layer 164 can be formed to have the same planar shape. it can.

(4) Next, as shown in FIG. 18, the semiconductor layers 32 and 40 are patterned to form the third mirror 330, the third semiconductor multilayer film 332, the lower contact layer 340, and the collector contact layer 342. Specifically, a resist layer R130 is similarly formed on the semiconductor layer 40, and then etched using the resist layer R130 as a mask to leave a portion covered with the resist layer R130. Etching is allowed to proceed until the semiconductor layer 24 is exposed. For example, the AlGaAs layer having the smaller Al composition in the semiconductor layer 24 may be exposed. Therefore, a part of the semiconductor layer 24 may be further removed by etching. Specifically, the AlGaAs layer having a smaller Al composition is exposed by performing surface treatment by applying wet etching. In the wet etching, for example, a hydrogen fluoride aqueous solution or a so-called hydrofluoric acid buffer solution can be used. For example, by using a hydrofluoric acid buffer solution as an etchant, the PH change of the etchant can be reduced. As a result, the etching rate can be easily controlled. As the hydrofluoric acid buffer solution, for example, a mixed solution of a hydrogen fluoride aqueous solution (HF) and a weak alkali ammonium fluoride (NH ₄ F) can be used.

  (5) As shown in FIG. 19, the active layers 122, the intermediate semiconductor layer 352, the second mirror 124, and the second semiconductor multilayer film 354 are formed by patterning the semiconductor layers 22 and 24. Specifically, a resist layer R140 is similarly formed on the semiconductor layer 24, and then etched using the resist layer R140 as a mask to leave a portion covered with the resist layer R140. Etching is allowed to proceed until the semiconductor layer 20 is exposed. Also in this case, similarly to the above (4), for example, the AlGaAs layer having the smaller Al composition in the semiconductor layer 20 may be exposed. Therefore, a part of the semiconductor layer 20 may be further removed by etching.

  (6) If necessary, the first mirror 120 and the first semiconductor multilayer film 350 are formed by patterning the lowermost semiconductor layer 20 as shown in FIG. Specifically, a resist layer R150 is similarly formed on the semiconductor layer 20, and then etched using the resist layer R150 as a mask to leave a portion covered with the resist layer R150. Etching may proceed until the substrate 110 is exposed.

  Thus, by increasing the planar shape of each semiconductor layer as approaching the substrate 110 from the above (2) to (6), an electrode formation region can be secured as necessary. Note that the order of the above-described patterning steps (2) to (6) is not limited. For example, patterning may be performed in order from the side closer to the substrate 110.

  (7) Next, the substrate 110 is put into a water vapor atmosphere of about 400 ° C., for example, so that the layer having a high Al composition of the second mirror 124 is oxidized from the side surface to form the insulating layer 126. When the surface emitting semiconductor laser 100V includes the insulating layer 126, current flows only in a portion where the insulating layer 126 is not formed (a portion not oxidized) during driving. Therefore, in the step of forming the insulating layer 126 by oxidation, the current density can be controlled by controlling the formation region of the insulating layer 126.

  In this step, a dielectric layer is formed on each of the third mirror 330 and the third semiconductor multilayer film 332. Specifically, the AlGaAs layer (including the AlAs layer) having the higher Al composition of the third mirror 330 (or the third semiconductor multilayer film 332) is oxidized to form a dielectric layer. Their oxidation rates depend on the furnace temperature, the amount of steam supplied, the Al composition and the film thickness of the layer to be oxidized.

  (8) Also, first and second electrodes 170 and 172 for driving the surface emitting semiconductor laser 100V are formed, and third and fourth electrodes 374 and 376 for driving the photodiode 300P are formed. A collector electrode 380, a base electrode 182 and an emitter electrode 184 for driving the bipolar transistor 300B are formed (see FIG. 14). The formation region and material of each electrode are as described above. As a method for forming the electrode, for example, at least one conductive layer may be formed by a vacuum deposition method, a sputtering method, or a plating method, and then a part of the conductive layer may be removed by a lift-off method. After electrode formation, annealing treatment may be performed for several minutes at a temperature of about 400 ° C., for example. Note that a dry etching method may be applied instead of the lift-off method.

  In the above description, the method of forming the dielectric layer by oxidation has been described. However, as a modification, insulating films (for example, oxide films such as aluminum oxide) may be alternately stacked in the above (1). Note that the stacking method is not limited, and the semiconductor layer 32 can be formed by alternately performing epitaxial growth and CVD, for example.

  Through the above steps, the optoelectronic integrated device 300 in which the surface emitting semiconductor laser 100V, the photodiode 300P, and the bipolar transistor 300B are integrated on one chip can be manufactured.

  The other details of the optoelectronic integrated device and the manufacturing method thereof according to the present embodiment include contents that can be derived from the first embodiment.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same purposes and results). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that achieves the same effect as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

1 is a plan view of an optoelectronic integrated device according to a first embodiment of the present invention. II-II sectional view taken on the line of FIG. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 1st Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 1st Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 1st Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 1st Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 1st Embodiment of this invention. Sectional drawing of the optoelectronic integrated device which concerns on the 2nd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 2nd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 2nd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 2nd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 2nd Embodiment of this invention. The top view of the optoelectronic integrated element which concerns on the 3rd Embodiment of this invention. FIG. 14 is a sectional view taken along line XIV-XIV in FIG. 13. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 3rd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 3rd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 3rd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 3rd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 3rd Embodiment of this invention. The figure which shows the manufacturing method of the optoelectronic integrated element which concerns on the 3rd Embodiment of this invention.

Explanation of symbols

20, 22, 24, 30, 32, 40, 42, 44, 66, 68 ... semiconductor layer 110 ... substrate 120 ... first mirror 122 ... active layer 122 ... active layer 124 ... second mirror 126 ... insulating layer 142 ... light Absorbing layer 144 ... Upper contact layer 145 ... Optical surface 150 ... Semiconductor multilayer film 152 ... Intermediate semiconductor layer 154 ... Collector contact layer 162 ... Collector layer 162 ... Collector layer 164 ... Base layer 166 ... Emitter layer 168 ... Emitter contact layer 170 ... No. DESCRIPTION OF SYMBOLS 1 electrode 172 ... 2nd electrode 174 ... 3rd electrode 180 ... Collector electrode 182 ... Base electrode 184 ... Emitter electrode 230 ... Isolation semiconductor layer 232 ... Intermediate semiconductor layer 240 ... Lower contact layer 242 ... Collector contact layer 250 ... 1st semiconductor multilayer Film 252 ... Second intermediate semiconductor layer 254 ... Second semiconductor multilayer film 72 ... second electrode 280 ... collector electrode 330 ... third mirror 332 ... third semiconductor multilayer film 340 ... lower contact layer 342 ... collector contact layer 350 ... first semiconductor multilayer film 352 ... intermediate semiconductor layer 354 ... second semiconductor multilayer film 374 ... Third electrode 376 ... Fourth electrode 380 ... Collector electrode

Claims (22)

A substrate,
A surface emitting semiconductor laser provided above the substrate and including a first mirror, an active layer, and a second mirror;
A photodiode provided above the surface emitting semiconductor laser and including at least a light absorption layer;
A bipolar transistor provided above the substrate;
Including
The bipolar transistor is an optoelectronic integrated device including the same semiconductor layer as each of the first mirror, the active layer, the second mirror, and the light absorption layer. The optoelectronic integrated device according to claim 1.
The photodiode may further include an upper contact layer provided above the light absorption layer. The optoelectronic integrated device according to claim 2.
And further comprising first, second and third electrodes for driving the surface emitting semiconductor laser and the photodiode;
The first electrode is formed in contact with the first mirror,
The second electrode is formed in contact with the second mirror,
The optoelectronic integrated device, wherein the third electrode is formed in contact with the upper contact layer. In the optoelectronic integrated device according to claim 2 or 3,
The bipolar transistor is:
A semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
An intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A collector contact layer formed of the same semiconductor layer as the second mirror;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
An optoelectronic integrated device. The optoelectronic integrated device according to claim 1.
A separation semiconductor layer is provided between the surface emitting semiconductor laser and the photodiode,
The photodiode may further include a lower contact layer provided above the isolation semiconductor layer, and an upper contact layer provided above the light absorption layer. The optoelectronic integrated device according to claim 5.
The uppermost layer of the second mirror, the isolation semiconductor layer, and the lower contact layer are each composed of an Al _x Ga _1-x As layer (0 ≦ x ≦ 1),
An optoelectronic integrated device wherein the Al composition of the isolation semiconductor layer is larger than the Al composition of the uppermost layer of the second mirror and larger than the Al composition of the lower contact layer. The optoelectronic integrated device according to claim 5 or 6,
And further comprising first, second and third electrodes for driving the surface emitting semiconductor laser and the photodiode;
The first electrode is formed in contact with the first mirror,
The second electrode is formed in contact with the second mirror, the isolation semiconductor layer, and the lower contact layer,
The optoelectronic integrated device, wherein the third electrode is formed in contact with the upper contact layer. The optoelectronic integrated device according to any one of claims 5 to 7,
The bipolar transistor is:
A first semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
A first intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A second semiconductor multilayer film formed of the same semiconductor layer as the second mirror;
A second intermediate semiconductor layer formed of the same semiconductor layer as the isolation semiconductor layer;
A collector contact layer formed of the same semiconductor layer as the lower contact layer;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
An optoelectronic integrated device. The optoelectronic integrated device according to claim 1.
A third mirror is provided between the surface emitting semiconductor laser and the photodiode,
Of the layers constituting the unit period of the third mirror, at least one layer is a dielectric layer,
The photodiode may further include a lower contact layer provided above the third mirror and an upper contact layer provided above the light absorption layer. The optoelectronic integrated device according to claim 9.
The dielectric layer is a layer containing aluminum oxide,
Among the layers constituting the unit period of the third mirror, the other layer is an AlGaAs layer. The optoelectronic integrated device according to claim 9 or 10,
And further comprising first, second, third and fourth electrodes for driving the surface emitting semiconductor laser and the photodiode,
The first electrode is formed in contact with the first mirror,
The second electrode is formed in contact with the second mirror,
The third electrode is formed in contact with the lower contact layer,
The optoelectronic integrated device, wherein the fourth electrode is formed in contact with the upper contact layer. The optoelectronic integrated device according to any one of claims 9 to 11,
The bipolar transistor is:
A first semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
An intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A second semiconductor multilayer film formed of the same semiconductor layer as the second mirror;
A third semiconductor multilayer film formed of the same semiconductor layer as the third mirror;
A collector contact layer formed of the same semiconductor layer as the lower contact layer;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
An optoelectronic integrated device. The optoelectronic integrated device according to any one of claims 1 to 12,
A collector electrode, a base electrode and an emitter electrode for driving the bipolar transistor;
The collector electrode is formed in contact with the collector contact layer;
The base electrode is formed in contact with the base layer,
The optoelectronic integrated device, wherein the emitter electrode is formed in contact with the emitter contact layer. A method of manufacturing an optoelectronic integrated device comprising a surface emitting semiconductor laser, a photodiode provided above the surface emitting semiconductor laser, and a bipolar transistor,
(A) Growing a plurality of semiconductor layers for forming at least a first mirror, an active layer, a second mirror, and a light absorption layer above the substrate;
(B) At least the first mirror, the active layer, the second mirror, and the light absorption layer are formed by patterning, and the same as each of the first mirror, the active layer, the second mirror, and the light absorption layer. Forming the bipolar transistor with a semiconductor layer;
(C) forming electrodes for driving the surface-emitting semiconductor laser, the photodiode, and the bipolar transistor;
A method of manufacturing an optoelectronic integrated device. The method of manufacturing an optoelectronic integrated device according to claim 14,
In the step (a), a plurality of semiconductor layers for forming the first mirror, the active layer, the second mirror, the light absorption layer, and the upper contact layer are grown above the substrate,
In the step (b), the bipolar transistor is
A semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
An intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A collector contact layer formed of the same semiconductor layer as the second mirror;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
A method of manufacturing an optoelectronic integrated device formed so as to include The method of manufacturing an optoelectronic integrated device according to claim 15,
In the step (c),
Forming a first electrode in contact with the first mirror;
Forming a second electrode in contact with the second mirror;
Forming a third electrode in contact with the upper contact layer;
Forming a collector electrode in contact with the collector contact layer;
Forming a base electrode in contact with the base layer;
A method for manufacturing an optoelectronic integrated device, wherein an emitter electrode is formed in contact with the emitter contact layer. The method of manufacturing an optoelectronic integrated device according to claim 14,
In the step (a), a plurality of layers for forming the first mirror, the active layer, the second mirror, the separation semiconductor layer, the lower contact layer, the light absorption layer, and the upper contact layer above the substrate. Grow the semiconductor layer,
In the step (b), the bipolar transistor is
A first semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
A first intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A second semiconductor multilayer film formed of the same semiconductor layer as the second mirror;
A second intermediate semiconductor layer formed of the same semiconductor layer as the isolation semiconductor layer;
A collector contact layer formed of the same semiconductor layer as the lower contact layer;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
A method of manufacturing an optoelectronic integrated device formed so as to include In the manufacturing method of the optoelectronic integrated device of Claim 17,
The step (b) includes etching the lower contact layer with a first etchant and etching the isolation semiconductor layer with a second etchant.
The first etchant has a property that an etching rate of the lower contact layer is larger than an etching rate of the isolation semiconductor layer,
The method of manufacturing an optoelectronic integrated device, wherein the second etchant has a property that an etching rate of the isolation semiconductor layer is larger than an etching rate of an uppermost layer of the second mirror. In the manufacturing method of the optoelectronic integrated device according to claim 17 or 18,
In the step (c),
Forming a first electrode in contact with the first mirror;
Forming a second electrode in contact with the second mirror, the isolation semiconductor layer, and the lower contact layer;
Forming the third electrode in contact with the upper contact layer;
Forming a collector electrode in contact with the collector contact layer;
Forming a base electrode in contact with the base layer;
A method for manufacturing an optoelectronic integrated device, wherein an emitter electrode is formed in contact with the emitter contact layer. The method of manufacturing an optoelectronic integrated device according to claim 14,
In the step (a), a plurality of the first mirror, the active layer, the second mirror, the third mirror, the lower contact layer, the light absorption layer, and the upper contact layer are formed above the substrate. Grow the semiconductor layer,
In the step (b), the bipolar transistor is
A first semiconductor multilayer film formed of the same semiconductor layer as the first mirror;
An intermediate semiconductor layer formed of the same semiconductor layer as the active layer;
A second semiconductor multilayer film formed of the same semiconductor layer as the second mirror;
A third semiconductor multilayer film formed of the same semiconductor layer as the third mirror;
A collector contact layer formed of the same semiconductor layer as the lower contact layer;
A collector layer formed of the same semiconductor layer as the light absorption layer;
A base layer formed of the same semiconductor layer as the upper contact layer;
An emitter layer provided above the base layer;
An emitter contact layer provided above the emitter layer;
A method of manufacturing an optoelectronic integrated device formed so as to include The method of manufacturing an optoelectronic integrated device according to claim 20,
After the step (b), it further includes forming a dielectric layer by oxidizing at least one of the layers constituting the unit period in each of the third mirror and the third semiconductor multilayer film. A method for manufacturing an optoelectronic integrated device. In the manufacturing method of the optoelectronic integrated device of Claim 20 or Claim 21,
In the step (c),
Forming a first electrode in contact with the first mirror;
Forming a second electrode in contact with the second mirror;
Forming a third electrode in contact with the lower contact layer;
Forming a fourth electrode in contact with the upper contact layer;
Forming a collector electrode in contact with the collector contact layer;
Forming a base electrode in contact with the base layer;
A method for manufacturing an optoelectronic integrated device, wherein an emitter electrode is formed in contact with the emitter contact layer.

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