JP2006156969A5 - - Google Patents
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- JP2006156969A5 JP2006156969A5 JP2005306607A JP2005306607A JP2006156969A5 JP 2006156969 A5 JP2006156969 A5 JP 2006156969A5 JP 2005306607 A JP2005306607 A JP 2005306607A JP 2005306607 A JP2005306607 A JP 2005306607A JP 2006156969 A5 JP2006156969 A5 JP 2006156969A5
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- JP
- Japan
- Prior art keywords
- semiconductor device
- compound layer
- organic compound
- transistor
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (14)
複数の前記メモリセルは直列に接続されることを特徴とする半導体装置。 Has a plurality of Rume Moriseru to have a structure of connecting the organic element and the transistor in parallel,
It is the memory cell of the multiple semiconductor device characterized by being connected in series.
複数の前記メモリセルは直列に接続され、ＮＡＮＤ型メモリを構成することを特徴とする半導体装置。 Has a plurality of Rume Moriseru to have a structure of connecting the organic element and the transistor in parallel,
The memory cells of several are connected in series, wherein a constituting the NAND type memory.
複数の前記メモリセルは並列に接続されることを特徴とする半導体装置。 Has a plurality of Rume Moriseru to have a structure of connecting the organic element and a transistor in series,
The semiconductor device is the memory cell of the multiple, characterized in that connected in parallel.
複数の前記メモリセルは並列に接続され、ＮＯＲ型メモリを構成することを特徴とする半導体装置。 Has a plurality of Rume Moriseru to have a structure of connecting the organic element and a transistor in series,
It is the memory cell of multiple connected in parallel, wherein a constituting the NOR type memory.
前記メモリセルの信号を検出する手段を有することを特徴とする半導体装置。A semiconductor device comprising means for detecting a signal of the memory cell.
前記メモリセルの信号を検出する手段は、センスアンプを有することを特徴とする半導体装置。 In claim 5 ,
It means for detecting the signal of the Memorise Le A semiconductor device characterized by having a sense amplifier.
前記有機素子は有機化合物層を有し、前記有機化合物層は、電子輸送材料またはホール輸送材料を含むことを特徴とする半導体装置。 In any one of claims 1 to 6,
The organic element has an organic compound layer, the organic compound layer, a semiconductor device which comprises an electron transport material or hole transport material.
前記有機素子は有機化合物層を有し、前記有機化合物層は、光を照射することによって電気抵抗が変化する材料を含むことを特徴とする半導体装置。 In any one of claims 1 to 6,
The organic element has an organic compound layer, the organic compound layer, a semiconductor device which comprises a material whose electric resistance is changed by irradiating light.
前記有機化合物層は、レーザ光の照射により導電性が変化することを特徴とする半導体装置。 In claim 7 ,
The semiconductor device according to claim 1, wherein the organic compound layer has conductivity changed by laser light irradiation.
前記有機素子は有機化合物層を有し、前記有機化合物層は、電圧または電流を印加することによって電気抵抗が変化する材料を含むことを特徴とする半導体装置。 In any one of claims 1 to 6,
The organic element has an organic compound layer, the organic compound layer, a semiconductor device which comprises a material whose electric resistance is changed by applying a voltage or current.
前記有機素子は、半導体基板、ガラス基板、または可撓性基板上に設けられることを特徴とする半導体装置。 In any one of claims 1 to 10,
The organic element is a semiconductor device, characterized in that provided in the semiconductor substrate, a glass substrate or a flexible substrate.
前記トランジスタは、薄膜トランジスタであることを特徴とする半導体装置。 In any one of claims 1 to 11,
The transistor is a semiconductor device which is a thin film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005306607A JP2006156969A (en) | 2004-10-29 | 2005-10-21 | Semiconductor device, ic card, ic tag, rf-id tag, transponder, bill, negotiable securities, passport, electronic apparatus, baggage, and clothing |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004317398 | 2004-10-29 | ||
| JP2005306607A JP2006156969A (en) | 2004-10-29 | 2005-10-21 | Semiconductor device, ic card, ic tag, rf-id tag, transponder, bill, negotiable securities, passport, electronic apparatus, baggage, and clothing |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011115579A Division JP2011211215A (en) | 2004-10-29 | 2011-05-24 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006156969A JP2006156969A (en) | 2006-06-15 |
| JP2006156969A5 true JP2006156969A5 (en) | 2008-09-18 |
Family
ID=36634806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005306607A Withdrawn JP2006156969A (en) | 2004-10-29 | 2005-10-21 | Semiconductor device, ic card, ic tag, rf-id tag, transponder, bill, negotiable securities, passport, electronic apparatus, baggage, and clothing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006156969A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008046116A (en) * | 2006-07-20 | 2008-02-28 | Semiconductor Energy Lab Co Ltd | Position information detecting system and position information detection method |
| EP1881338B1 (en) | 2006-07-20 | 2011-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Position information detection system and position information detection method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3761300B2 (en) * | 1997-09-30 | 2006-03-29 | 株式会社東芝 | Shift register memory element |
| JP2000113152A (en) * | 1998-10-05 | 2000-04-21 | Hitachi Maxell Ltd | Magnetic stripe tape with built-in non-contact memory element, and IC card and IC tag manufactured using the same |
| KR20020030272A (en) * | 2000-03-28 | 2002-04-24 | 롤페스 요하네스 게라투스 알베르투스 | Integrated circuit with programmable memory element |
| JP2002026283A (en) * | 2000-06-30 | 2002-01-25 | Seiko Epson Corp | Multi-layered memory device and method of manufacturing the same |
| JP2003243631A (en) * | 2002-02-18 | 2003-08-29 | Mitsubishi Electric Corp | Thin film magnetic storage device, wireless chip using the same, distribution management system and manufacturing process management system |
| JP2004103212A (en) * | 2002-07-15 | 2004-04-02 | Toshiba Corp | Magnetic random access memory |
| DE602004027214D1 (en) * | 2003-02-14 | 2010-07-01 | Fuji Electric Holdings | SWITCHING ELEMENT |
| JP4167513B2 (en) * | 2003-03-06 | 2008-10-15 | シャープ株式会社 | Nonvolatile semiconductor memory device |
| US6868025B2 (en) * | 2003-03-10 | 2005-03-15 | Sharp Laboratories Of America, Inc. | Temperature compensated RRAM circuit |
-
2005
- 2005-10-21 JP JP2005306607A patent/JP2006156969A/en not_active Withdrawn
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