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JP2006037163A - Method for producing high purity copper ingot with low carbon content - Google Patents

Method for producing high purity copper ingot with low carbon content Download PDF

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JP2006037163A
JP2006037163A JP2004218510A JP2004218510A JP2006037163A JP 2006037163 A JP2006037163 A JP 2006037163A JP 2004218510 A JP2004218510 A JP 2004218510A JP 2004218510 A JP2004218510 A JP 2004218510A JP 2006037163 A JP2006037163 A JP 2006037163A
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purity copper
copper
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ingot
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JP4505731B2 (en
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Shoji Aoki
庄治 青木
Tetsuo Yamamichi
哲雄 山道
Kenichi Takagi
賢一 高木
Yutaka Furushiba
豊 古柴
Masato Koide
正登 小出
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Mitsubishi Materials Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for producing a high-purity copper ingot containing little carbon. <P>SOLUTION: This production method comprises: melting a high-purity copper cathode with a purity of 99.999 mass% or higher, in a vacuum or inert gas atmosphere at a temperature between 1,084°C and 1,150°C; and casting the melt. The method alternatively comprises: subjecting the high-purity copper cathode to the pretreatment of heating and holding it at a temperature between 700°C and 1,050°C in atmospheric air or in an oxidizing atmosphere, as needed; adding copper oxide or blowing a gas containing oxygen into the molten metal, as needed; and casting the melt. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

この発明は、炭素含有量の少ない高純度銅鋳塊の製造方法に関するものであり、この炭素含有量の少ない高純度銅鋳塊は高純度銅ターゲット、メッキ用アノード、高級オーディオワイヤ、極薄圧延銅箔などを製造するための加工素材となるものである。   The present invention relates to a method for producing a high-purity copper ingot with a low carbon content. The high-purity copper ingot with a low carbon content is a high-purity copper target, an anode for plating, a high-quality audio wire, and an ultra-thin rolling. It is a processed material for producing copper foil and the like.

従来の技術Conventional technology

高純度銅として、ガス成分を除いた純度が９９．９９９質量％以上の５Ｎ〜７Ｎ高純度銅が知られており広く市販されている。この高純度銅は一般に電気または電子機器の配線材料として使用されており、例えば、スパッタリングやメッキにより形成されたＩＣ，ＬＳＩ，ＵＬＳＩなどの半導体装置の導電性金属膜として使用され、さらにオーディオワイヤとして使用され、さらに１０μｍ以下の圧延銅箔にも適用を検討している。前記半導体装置の導電性金属膜は純度が９９．９９９質量％以上の高純度銅ターゲットをスパッタリングすることにより形成され、このターゲットに含まれるＣ、Ｏなどのガス成分の総量は少ないほどスパッタリング中に発生するパーティクルの数が少なくなり、ターゲット中の炭素含有量はＣ、Ｏなどのガス成分の総量は５ｐｐｍ以下（一層好ましくは１ｐｐｍ以下）が良いとされている（特許文献１参照）。
さらに、スパッタリング用高純度銅ターゲットを製造するための高純度銅鋳塊は、電解精製して得られた純度：９９．９９９質量％以上の電気銅を１１５０〜１３００℃で溶解し一方向凝固鋳造することにより得られること、およびかかる温度で溶解し鋳造して得られた高純度銅鋳塊を熱間圧延と冷間圧延を繰り返したのち切断して高純度銅ターゲットを製造する方法も知られている（特許文献２参照）。
特開２００２−１２９３１３号公報 特開２００１−２４０９４９号公報 As high-purity copper, 5N-7N high-purity copper having a purity of 99.999% by mass or more excluding gas components is known and widely commercially available. This high-purity copper is generally used as a wiring material for electrical or electronic equipment. For example, it is used as a conductive metal film for semiconductor devices such as IC, LSI, ULSI formed by sputtering or plating, and as an audio wire. In addition, application to a rolled copper foil of 10 μm or less is also being studied. The conductive metal film of the semiconductor device is formed by sputtering a high-purity copper target having a purity of 99.999% by mass or more. The smaller the total amount of gas components such as C and O contained in the target, the more during the sputtering. The number of particles generated is reduced, and the carbon content in the target is preferably 5 ppm or less (more preferably 1 ppm or less) as the total amount of gas components such as C and O (see Patent Document 1).
Furthermore, the high-purity copper ingot for producing a high-purity copper target for sputtering is a unidirectionally solidified casting in which electrolytic copper obtained by electrolytic refining is melted at 1150 to 1300 ° C. with electrolytic copper of 99.999 mass% or more. And a method for producing a high-purity copper target by cutting a high-purity copper ingot obtained by melting and casting at such a temperature after repeated hot rolling and cold rolling. (See Patent Document 2).
JP 2002-129313 A JP 2001-240949 A

前述の如く、高純度銅鋳塊は、純度：９９．９９９質量％以上の高純度銅カソード（電気銅）を真空または不活性ガス中で溶解して得られた銅溶湯を鋳造することにより製造されることは知られているが、高純度銅カソード（電気銅）を製造する際に炭素は添加剤から不可避的に混入し、高純度銅カソード（電気銅）中に１ｐｐｍ以上含まれている。この炭素は純度：９９．９９９質量％以上の高純度銅カソード（電気銅）を真空または不活性ガス中で溶解して得られた高純度銅溶湯を鋳造することによりある程度除去できるが、炭素量の低減には限界がある。そのために、簡便で一層炭素含有量の少ない高純度銅鋳塊の製造方法が求められていた。   As described above, a high-purity copper ingot is manufactured by casting a molten copper obtained by melting a high-purity copper cathode (electric copper) having a purity of 99.999 mass% or more in a vacuum or an inert gas. Although it is known that carbon is inevitably mixed from the additive when producing a high purity copper cathode (electrocopper), 1 ppm or more is contained in the high purity copper cathode (electrocopper). . This carbon can be removed to some extent by casting a high-purity copper melt obtained by melting a high-purity copper cathode (electro-copper) having a purity of 99.999% by mass or more in a vacuum or an inert gas. There is a limit to reducing this. Therefore, there has been a demand for a method for producing a high-purity copper ingot that is simple and has a lower carbon content.

そこで、本発明者らは、炭素含有量の少ない高純度銅鋳塊を簡便に製造すべく研究を行った結果、
純度：９９．９９９質量％以上の高純度銅カソードを、真空または不活性ガス雰囲気中で溶解し、得られた高純度銅溶湯を銅の融点（１０８４℃）に近い温度にしたのち鋳造して鋳塊を作製すると、炭素含有量の少ない高純度銅鋳塊を作製することができ、溶湯温度が銅の融点に近いほど銅中への炭素の溶解度が低下し炭素含有量の少ない高純度銅鋳塊を作製することができるが、その溶湯温度は１１５０℃未満であることが好ましいことから、１０８４〜１１５０℃未満であることが必要である、などの知見を得たのである。 Therefore, the present inventors conducted a study to easily produce a high-purity copper ingot with a low carbon content,
Purity: 99.999 mass% or more of high purity copper cathode is melted in vacuum or inert gas atmosphere, and the resulting high purity copper molten metal is cast at a temperature close to the melting point of copper (1084 ° C.). When the ingot is made, a high-purity copper ingot with a low carbon content can be made. The closer the molten metal temperature is to the melting point of copper, the lower the solubility of carbon in copper and the high-purity copper with a low carbon content. Although an ingot can be produced, since the molten metal temperature is preferably less than 1150 ° C., it has been found that it is necessary to be less than 1084 to 1150 ° C.

この発明は、かかる知見にもとづいてなされたものであって、
（１）純度：９９．９９９質量％以上の高純度銅カソードを、真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解したのち鋳造する炭素含有量の少ない高純度銅鋳塊の製造方法、に特徴を有するものである。 This invention was made based on such knowledge,
(1) Purity: 99.999 mass% or more of a high purity copper ingot having a low carbon content that is cast after melting a high purity copper cathode in a vacuum or an inert gas atmosphere at a temperature of less than 1084 to 1150 ° C. It is characterized by the manufacturing method.

さらに、前記炭素含有量の一層少ない高純度銅鋳塊を製造するには、高純度銅カソードを真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解し鋳造する前に、純度：９９．９９９質量％以上の高純度銅カソードを大気中あるいは酸化性雰囲気中、温度：７００〜１０５０℃に加熱保持することにより高純度銅カソード中のカーボンを酸化し、この加熱前処理を施した高純度銅カソードを真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解し鋳造することが一層好ましい。したがって、この発明は、
（２）純度：９９．９９９質量％以上の高純度銅カソードを大気中あるいは酸化性雰囲気中、温度：７００〜１０５０℃に加熱保持する前処理を施し、この前処理を施した高純度銅カソードを真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解したのち鋳造する炭素含有量の少ない高純度銅鋳塊の製造方法、に特徴を有するものである。 Further, in order to produce a high purity copper ingot having a lower carbon content, the purity of the high purity copper cathode is melted and cast in a vacuum or an inert gas atmosphere at a temperature of less than 1084 to 1150 ° C. 99.999 mass% or more of the high purity copper cathode was heated and held in the atmosphere or in an oxidizing atmosphere at a temperature of 700 to 1050 ° C. to oxidize the carbon in the high purity copper cathode and subjected to this heating pretreatment. More preferably, the high purity copper cathode is melted and cast in a vacuum or an inert gas atmosphere at a temperature of less than 1084 to 1150 ° C. Therefore, the present invention
(2) Purity: 99.999% by mass or more of a high-purity copper cathode subjected to pretreatment by heating and holding at a temperature of 700 to 1050 ° C. in the atmosphere or in an oxidizing atmosphere In a vacuum or an inert gas atmosphere at a temperature of less than 1084 to 1150 ° C. and then cast, and is characterized by a method for producing a high-purity copper ingot having a low carbon content.

さらに、前記炭素含有量の一層少ない高純度銅鋳塊を製造するには、前記純度：９９．９９９質量％以上の高純度銅カソードを、真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解し、その溶湯中に酸化銅を添加するかまたは酸素を含有するガスを吹き込んでＣ＋Ｏ→ＣＯあるいはＣ＋Ｏ２→ＣＯ２の反応で除去したのち鋳造することにより炭素含有量の一層少ない高純度銅鋳塊を得ることができる。したがって、この発明は、
（３）純度：９９．９９９質量％以上の高純度銅カソードを、真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解し、次いで溶湯中に酸化銅を添加するかまたは酸素を含有するガスを吹き込んだのち鋳造する炭素含有量の少ない高純度銅鋳塊の製造方法、に特徴を有するものである。 Further, in order to produce a high-purity copper ingot with a lower carbon content, the high-purity copper cathode having a purity of 99.999% by mass or more is heated in a vacuum or an inert gas atmosphere at a temperature of 1084 to 1150 ° C. The content of carbon is further reduced by casting after adding copper oxide into the molten metal or blowing in oxygen-containing gas and removing it by the reaction of C + O → CO or C + O 2 → CO 2. A pure copper ingot can be obtained. Therefore, the present invention
(3) Purity: 99.999 mass% or more of a high purity copper cathode is melted at a temperature of less than 1084 to 1150 ° C. in a vacuum or an inert gas atmosphere, and then copper oxide is added to the molten metal or oxygen is added. It is characterized by a method for producing a high-purity copper ingot with a low carbon content to be cast after blowing the contained gas.

前記純度：９９．９９９質量％以上の高純度銅カソードの溶解温度を１１５０℃未満にしたのは、１１５０℃以上の温度で溶解した高純度銅溶湯を鋳造しても炭素含有量が少ない１ｐｐｍ未満の高純度銅鋳塊を製造することが容易でないからである。また、温度：１０８４℃未満に加熱しても高純度銅は溶解しないので銅溶湯を作製することはできない。
高純度銅カソードを大気中あるいは酸化性雰囲気中で加熱保持する前処理の温度を７００〜１０５０℃に限定したのは、温度：７００℃未満に加熱しても酸素が高純度銅カソード内部まで浸透して高純度銅カソード内部の炭素と反応するまでに時間がかかりすぎるので好ましくなく、一方、１０５０℃を越える温度に加熱すると融点近い温度であるために溶融する可能性があるとともに銅の酸化損耗が激しくなるので好ましくない理由によるものである。温度：７００〜１０５０℃に保持する時間は、１０分以上、５時間未満が好ましい。 The purity: 99.999 mass% or more of the high purity copper cathode was melted at a temperature of less than 1150 ° C. The carbon content was less than 1 ppm even when casting a high purity copper melt melted at a temperature of 1150 ° C. or more. This is because it is not easy to produce a high purity copper ingot. Further, even when heated to a temperature of less than 1084 ° C., high-purity copper does not dissolve, so a molten copper cannot be produced.
The pretreatment temperature for heating and holding the high purity copper cathode in the air or in an oxidizing atmosphere was limited to 700 to 1050 ° C. The temperature penetrated into the high purity copper cathode even when heated to less than 700 ° C. It is not preferable because it takes too much time to react with the carbon inside the high-purity copper cathode. On the other hand, heating to a temperature exceeding 1050 ° C. may cause melting because it is close to the melting point, and copper oxidation loss This is due to an undesirable reason. Temperature: The time maintained at 700 to 1050 ° C. is preferably 10 minutes or more and less than 5 hours.

炭素含有量の少ない高純度銅鋳塊を簡便な方法で提供することができ、この炭素含有量の少ない高純度銅鋳塊を用いて作製したスパッタリングターゲットはスパッタリングに際してパーティクルの発生が少なく、また、この炭素含有量の少ない高純度銅鋳塊を用いて作製したメッキ用アノードは、銅メッキによる配線を形成しても銅薄膜表面にパーティクルが付着生成することが少なく、またこの炭素含有量の少ない高純度銅鋳塊を用いて作製した高純度銅圧延箔はピンホールの発生や圧延割れが少なく、さらにこの炭素含有量の少ない高純度銅鋳塊を用いて音響に与える影響が少ない高級オーディオワイヤを提供することができるなど産業上優れた効果をもたらすものである。   A high-purity copper ingot with a low carbon content can be provided by a simple method, and the sputtering target produced using this high-purity copper ingot with a low carbon content has less generation of particles during sputtering, The anode for plating produced using this high-purity copper ingot with a low carbon content is less likely to cause particles to adhere to the surface of the copper thin film even when wiring is formed by copper plating, and the carbon content is low. High-purity copper rolled foil produced using high-purity copper ingots has less pinholes and rolling cracks, and high-quality audio wires have less impact on sound using high-purity copper ingots with low carbon content. It is possible to provide an industrially superior effect.

実施例１
純度：９９．９９９質量％以上の高純度銅カソード（電気銅）を用意した。高純度銅カソード（電気銅）には４ｐｐｍの炭素が含まれていた。この高純度銅カソード（電気銅）をアルゴンガス雰囲気中、表１に示される温度で溶解して高純度銅溶湯を作製し、この高純度銅溶湯を鋳型に鋳造して鋳塊を作製することにより本発明法１〜５および従来法１〜３を実施した。本発明法１〜５および従来法１〜３により得られた鋳塊から縦：２５ｍｍ、横：２５ｍｍ、厚さ：１０ｍｍの寸法を有するプレートを切り出し、エッチングやアセトン洗浄したのち、ＧＤ−ＭＳ分析（グロー放電質量分析）により炭素（Ｃ）不純物量の測定を行い、炭素（Ｃ）不純物量の測定量を表１に示した。なお、表１に示されるＧＤ−ＭＳ分析結果は３回以上繰り返し行い、定量結果が安定したところで測定を終了し、測定結果としたものである。 Example 1
Purity: A high-purity copper cathode (electrocopper) having a purity of 99.999 mass% or more was prepared. The high purity copper cathode (electrocopper) contained 4 ppm of carbon. This high-purity copper cathode (electro-copper) is melted in an argon gas atmosphere at the temperature shown in Table 1 to produce a high-purity copper melt, and this high-purity copper melt is cast into a mold to produce an ingot. Inventive methods 1 to 5 and conventional methods 1 to 3 were carried out. A plate having dimensions of 25 mm in length, 25 mm in width, and 10 mm in thickness is cut from the ingots obtained by the present invention methods 1 to 5 and the conventional methods 1 to 3, and after etching and acetone cleaning, GD-MS analysis is performed. The carbon (C) impurity amount was measured by (glow discharge mass spectrometry), and the measured amount of the carbon (C) impurity amount is shown in Table 1. Note that the GD-MS analysis results shown in Table 1 were repeated three or more times, and the measurement was terminated when the quantitative results were stable, and the measurement results were obtained.

Figure 2006037163
Figure 2006037163

表１に示される結果から、純度：９９．９９９質量％以上の高純度銅カソード（電気銅）を１１５０℃未満の温度で溶解して得られた銅溶湯を鋳造して得られた鋳塊に含まれるＣ量は、１１５０℃以上の温度で溶解して得られた銅溶湯を鋳造して得られた鋳塊に含まれるＣ量に比べて少なくなっており、Ｃ含有量が１ｐｐｍ未満に低下した鋳塊が得られることが分かる。 From the results shown in Table 1, the ingot obtained by casting a copper melt obtained by melting a high purity copper cathode (electrocopper) having a purity of 99.999 mass% or more at a temperature of less than 1150 ° C. The amount of C contained is smaller than the amount of C contained in the ingot obtained by casting a molten copper obtained by melting at a temperature of 1150 ° C. or higher, and the C content is reduced to less than 1 ppm. It can be seen that an ingot is obtained.

実施例２
実施例１で用意した純度：９９．９９９質量％以上の高純度銅カソード（電気銅）を表２に示される温度に表２に示される時間保持することにより前処理を施し、この前処理を施した高純度銅カソード（電気銅）を表２に示される温度で溶解して高純度銅溶湯を作製し、この高純度銅溶湯を鋳型に鋳造して鋳塊を作製することにより本発明法６〜１０を実施した。この本発明法６〜１０により得られた鋳塊から縦：２５ｍｍ、横：２５ｍｍ、厚さ：１０ｍｍの寸法を有するプレートを切り出し、エッチングやアセトン洗浄したのち、ＧＤ−ＭＳ分析（グロー放電質量分析）により炭素（Ｃ）不純物量の測定を行い、炭素（Ｃ）不純物量の測定量を表２に示した。 Example 2
Purity prepared in Example 1: A high-purity copper cathode (electro-copper) of 99.999% by mass or more was pretreated by maintaining the temperature shown in Table 2 for the time shown in Table 2, and this pretreatment was performed. The high purity copper cathode (electrocopper) applied was melted at the temperature shown in Table 2 to produce a high purity copper melt, and the high purity copper melt was cast into a mold to produce an ingot. 6-10 were performed. A plate having dimensions of 25 mm in length, 25 mm in width, and 10 mm in thickness was cut out from the ingots obtained by the inventive methods 6 to 10, and after etching and acetone cleaning, GD-MS analysis (glow discharge mass spectrometry) ) Was used to measure the amount of carbon (C) impurities, and Table 2 shows the amounts of carbon (C) impurities measured.

Figure 2006037163
Figure 2006037163

表２に示される結果から、純度：９９．９９９質量％以上の高純度銅カソード（電気銅）を表２に示される温度に表２に示される時間保持する前処理を施すことにより、鋳塊に含まれるＣ量が一層少なくなっていることが分かる。   From the results shown in Table 2, a high purity copper cathode (electrocopper) having a purity of 99.999% by mass or more was subjected to pretreatment for holding the temperature shown in Table 2 for the time shown in Table 2 to obtain an ingot. It can be seen that the amount of C contained in is further reduced.

実施例３
実施例１の本発明法２で得られた高純度銅溶湯に酸化銅粉末を添加したのち、得られた高純度銅溶湯を鋳型に鋳造して鋳塊を作製することにより本発明法１１を実施した。この鋳塊から縦：２５ｍｍ、横：２５ｍｍ、厚さ：１０ｍｍの寸法を有するプレートを切り出し、実施例１と同様にしてエッチングやアセトン洗浄したのち、ＧＤ−ＭＳ分析（グロー放電質量分析）により炭素（Ｃ）不純物量の測定を行った結果、炭素（Ｃ）不純物量の測定量は０．２１ｍａｓｓ−ｐｐｍであった。この測定結果から、純度：９９．９９９質量％以上の高純度銅カソード（電気銅）を１１５０℃未満の温度で溶解し、酸化銅粉末を添加することにより一層炭素含有量の少ない高純度銅鋳塊が得られることが分かる。 Example 3
After adding copper oxide powder to the high-purity copper melt obtained in the present invention method 2 of Example 1, the present invention method 11 is produced by casting the obtained high-purity copper melt into a mold to produce an ingot. Carried out. A plate having dimensions of 25 mm in length, 25 mm in width, and 10 mm in thickness is cut out from this ingot, etched and washed in the same manner as in Example 1, and then subjected to carbon by GD-MS analysis (glow discharge mass spectrometry). (C) As a result of measuring the impurity amount, the measured amount of carbon (C) impurity amount was 0.21 mass-ppm. From this measurement result, a high-purity copper cast with a lower carbon content is obtained by melting a high-purity copper cathode (electro-copper) having a purity of 99.999 mass% or more at a temperature below 1150 ° C. and adding copper oxide powder. It can be seen that a lump is obtained.

実施例４
実施例２の本発明法７で得られた高純度銅溶湯に酸化銅粉末を添加したのち、得られた高純度銅溶湯を鋳型に鋳造して鋳塊を作製することにより本発明法１２を実施した。この鋳塊から縦：２５ｍｍ、横：２５ｍｍ、厚さ：１０ｍｍの寸法を有するプレートを切り出し、実施例１と同様にしてエッチングやアセトン洗浄したのち、ＧＤ−ＭＳ分析（グロー放電質量分析）により炭素（Ｃ）不純物量の測定を行った結果、炭素（Ｃ）不純物量の測定量は０．２４ｍａｓｓ−ｐｐｍであった。この測定結果から、純度：９９．９９９質量％以上の高純度銅カソード（電気銅）を１１５０℃未満の温度で溶解し、酸化銅粉末を添加することにより一層炭素含有量の少ない高純度銅鋳塊が得られることが分かる。
Example 4
After adding copper oxide powder to the high-purity copper melt obtained in the method 7 of the present invention of Example 2, the present method 12 is produced by casting the obtained high-purity copper melt into a mold to produce an ingot. Carried out. A plate having dimensions of 25 mm in length, 25 mm in width, and 10 mm in thickness is cut out from this ingot, etched and washed in the same manner as in Example 1, and then subjected to carbon by GD-MS analysis (glow discharge mass spectrometry). (C) As a result of measuring the impurity amount, the measured amount of carbon (C) impurity amount was 0.24 mass-ppm. From this measurement result, a high-purity copper cast with a lower carbon content is obtained by melting a high-purity copper cathode (electro-copper) having a purity of 99.999 mass% or more at a temperature below 1150 ° C. and adding copper oxide powder. It can be seen that a lump is obtained.

Claims (4)

純度：９９．９９９質量％以上の高純度銅カソードを、真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解したのち鋳造することを特徴とする炭素含有量の少ない高純度銅鋳塊の製造方法。 Purity: 99.999 mass% or more of high purity copper cathode, which is cast after melting at a temperature of less than 1084 to 1150 ° C. in a vacuum or an inert gas atmosphere. A method of manufacturing a lump. 純度：９９．９９９質量％以上の高純度銅カソードを大気中あるいは酸化性雰囲気中、温度：７００〜１０５０℃に加熱保持する前処理を施し、この前処理を施した高純度銅カソードを真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解したのち鋳造することを特徴とする炭素含有量の少ない高純度銅鋳塊の製造方法。 Purity: A high-purity copper cathode having a purity of 99.999 mass% or more is subjected to a pretreatment in which it is heated and maintained at 700 to 1050 ° C. in air or in an oxidizing atmosphere, and the high-purity copper cathode subjected to the pretreatment is vacuum A method for producing a high-purity copper ingot having a low carbon content, wherein the casting is performed after melting at 1084 to 1150 ° C in an inert gas atmosphere. 純度：９９．９９９質量％以上の高純度銅カソードを、真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解し、次いで溶湯中に酸化銅を添加するかまたは酸素を含有するガスを吹き込んだのち鋳造することを特徴とする炭素含有量の少ない高純度銅鋳塊の製造方法。 Purity: 99.999 mass% or more of a high purity copper cathode is dissolved in a vacuum or inert gas atmosphere at a temperature of less than 1084 to 1150 ° C., and then copper oxide is added to the molten metal or oxygen-containing gas A method for producing a high-purity copper ingot having a low carbon content, characterized by casting after blowing. 純度：９９．９９９質量％以上の高純度銅カソードを大気中あるいは酸化性雰囲気中、温度：７００〜１０５０℃に加熱保持する前処理を施し、この前処理を施した高純度銅カソードを真空または不活性ガス雰囲気中、温度：１０８４〜１１５０℃未満で溶解し、次いで溶湯中に酸化銅を添加するかまたは酸素を含有するガスを吹き込んだのち鋳造することを特徴とする炭素含有量の少ない高純度銅鋳塊の製造方法。
Purity: A high-purity copper cathode having a purity of 99.999 mass% or more is subjected to a pretreatment in which it is heated and held at 700 to 1050 ° C. in the air or in an oxidizing atmosphere, and the high-purity copper cathode subjected to the pretreatment is vacuumed or High in low carbon content, characterized by melting in an inert gas atmosphere at a temperature of less than 1084 to 1150 ° C., and then casting after adding copper oxide into the molten metal or blowing a gas containing oxygen A method for producing a pure copper ingot.
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US8030082B2 (en) 2006-01-13 2011-10-04 Honeywell International Inc. Liquid-particle analysis of metal materials

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JPH108244A (en) * 1996-06-21 1998-01-13 Dowa Mining Co Ltd Single crystal copper target and its production as well as semiconductor internal wiring formed by using the same
JPH107491A (en) * 1996-06-21 1998-01-13 Dowa Mining Co Ltd High-purity single crystal copper and its production and production unit therefor

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Publication number Priority date Publication date Assignee Title
JPH108244A (en) * 1996-06-21 1998-01-13 Dowa Mining Co Ltd Single crystal copper target and its production as well as semiconductor internal wiring formed by using the same
JPH107491A (en) * 1996-06-21 1998-01-13 Dowa Mining Co Ltd High-purity single crystal copper and its production and production unit therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8030082B2 (en) 2006-01-13 2011-10-04 Honeywell International Inc. Liquid-particle analysis of metal materials

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