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JP2006032469A - Multilayer ceramic substrate - Google Patents

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JP2006032469A
JP2006032469A JP2004205888A JP2004205888A JP2006032469A JP 2006032469 A JP2006032469 A JP 2006032469A JP 2004205888 A JP2004205888 A JP 2004205888A JP 2004205888 A JP2004205888 A JP 2004205888A JP 2006032469 A JP2006032469 A JP 2006032469A
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ceramic substrate
substrate
multilayer ceramic
laminated body
height
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Jun Matsushima
潤 松嶋
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Mitsumi Electric Co Ltd
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Abstract

【課題】 薄型及び小型の利点を損なうことなく、表面実装されるチップ部品の部品点数の削減を可能とする。
【解決手段】 セラミック基板が複数積層されるとともに内層に受動素子が形成される第1の積層体1を備える多層セラミック基板であって、第1の積層体1上に、セラミック基板より小面積のセラミック基板が複数積層されるとともに内層に受動素子が形成される第2の積層体3が設けられる。第2の積層体3の高さが、第1の積層体上に実装される半導体素子2の高さ以下とされる。
【選択図】 図1
PROBLEM TO BE SOLVED: To reduce the number of chip parts to be surface-mounted without impairing the advantages of thinness and small size.
A multilayer ceramic substrate including a first laminate 1 in which a plurality of ceramic substrates are laminated and a passive element is formed in an inner layer, the first laminate 1 having a smaller area than the ceramic substrate. A second laminated body 3 is provided in which a plurality of ceramic substrates are laminated and a passive element is formed in the inner layer. The height of the second stacked body 3 is set to be equal to or lower than the height of the semiconductor element 2 mounted on the first stacked body.
[Selection] Figure 1

Description

本発明は、セラミック基板が複数積層されるとともに内層に受動素子の少なくとも一部が形成される多層セラミック基板に関する。   The present invention relates to a multilayer ceramic substrate in which a plurality of ceramic substrates are stacked and at least a part of a passive element is formed in an inner layer.

電子機器においては、高機能化とともに小型化や薄型化に対する要求がさらに高まりつつあり、これに対応して、ICチップや各種の受動部品が実装される配線基板にも実装密度のさらなる向上が期待されている。このような要求を満たす基板の1つとして、セラミック基板を多数積層した多層基板にキャパシタ、インダクタ、フィルタ、カプラ等の機能を内蔵したLTCC(low temperature co-fired ceramics:低温同時焼成セラミックス)基板が提案されている。通常のLTCC基板を有する高周波モジュールは、図2に示すように、複数のセラミック基板を積層するとともに内層にキャパシタやインダクタ等の受動素子が形成されたLTCC多層基板101を作製し、このLTCC基板101の最表面に、基板内層に作り込むことが困難な半導体素子(IC)チップ102を実装し、さらに、ICチップ102の実装領域以外の領域に、大容量キャパシタ等のチップ部品103等を複数(図2では5個)実装することにより構成される。   In electronic devices, demands for miniaturization and thinning are increasing along with higher functionality. Correspondingly, further improvement in mounting density is expected for wiring boards on which IC chips and various passive components are mounted. Has been. As one of the substrates that satisfy these requirements, there is an LTCC (low temperature co-fired ceramics) substrate in which functions such as capacitors, inductors, filters, and couplers are built in a multilayer substrate in which many ceramic substrates are laminated. Proposed. As shown in FIG. 2, the high-frequency module having a normal LTCC substrate is manufactured by manufacturing a LTCC multilayer substrate 101 in which a plurality of ceramic substrates are stacked and passive elements such as capacitors and inductors are formed in an inner layer. A semiconductor element (IC) chip 102 that is difficult to be formed in the inner layer of the substrate is mounted on the outermost surface of the substrate, and a plurality of chip components 103 such as a large-capacitance capacitor are provided in a region other than the mounting region of the IC chip 102 ( 5 in FIG. 2).

LTCC基板やLTCC基板を備えるモジュールについては、さらなる高機能化を図るべく様々な検討が各方面で行われており、例えば特許文献1においては、低損失回路が形成された低損失層とノイズ抑制回路が形成された高損失層とを有する多層基板が開示されている。また、特許文献2においては、複数の誘電体層を備える高周波モジュールでスイッチとカプラとを一体化し、最上層の誘電体層にトリマブル抵抗器を配置した構成の高周波モジュール(LTCC基板)が開示されている。   Regarding the LTCC substrate and the module including the LTCC substrate, various studies have been made in various fields for further enhancement of functionality. For example, in Patent Document 1, a low loss layer in which a low loss circuit is formed and noise suppression are performed. A multilayer substrate having a high loss layer with a circuit formed thereon is disclosed. Patent Document 2 discloses a high-frequency module (LTCC substrate) having a configuration in which a switch and a coupler are integrated in a high-frequency module having a plurality of dielectric layers, and a trimmable resistor is arranged on the uppermost dielectric layer. ing.

このようなLTCC基板においては、従来は表面実装等により外付けされていたチップ部品を基板内層に形成することで部品点数の削減が可能となり、また、基板上にチップ部品を実装するタイプに比べて基板の小型化や薄型化が図られる。また、LTCC基板は、比較的低い温度で焼成を行うため、これまでの高温焼成基板では採用不可であった銀(Ag)等の良伝導体を内層に使用することが可能となるといった利点も得られる。
特開2001−111184号公報 特開2002−300081号公報
In such an LTCC substrate, it is possible to reduce the number of components by forming chip components that have been externally attached by surface mounting or the like in the inner layer of the substrate, and compared with a type in which chip components are mounted on the substrate. Thus, the substrate can be reduced in size and thickness. In addition, since the LTCC substrate is baked at a relatively low temperature, it is possible to use a good conductor such as silver (Ag) as an inner layer, which could not be used in a conventional high-temperature baked substrate. can get.
JP 2001-111184 A Japanese Patent Laid-Open No. 2002-300081

前述のように、電子機器の小型化等を図るうえでLTCC基板は有望な技術であるが、例えば携帯電話といった携帯用電子機器の分野においては、さらなる薄型化・小型化の技術が望まれている。そこで、LTCC基板のさらなる小型化を図る目的で、1枚のセラミック基板の面積を縮小する方法が考えられるが、セラミック基板の層数を増やすことなく基板面積を縮小しようとすると、内層に形成できる受動素子の個数も当然ながら減少し、外付けチップ部品が多数必要となる。内蔵できる受動素子の個数とセラミック基板の面積の小型化とを両立しようとすると、今度はセラミック基板の層数を増やさざるを得ず、モジュール全体の厚みが増加し、薄型の利点が損なわれるという問題がある。   As described above, the LTCC substrate is a promising technology for reducing the size of electronic devices. However, in the field of portable electronic devices such as mobile phones, a technology for further thinning and miniaturization is desired. Yes. Thus, a method of reducing the area of one ceramic substrate can be considered for the purpose of further reducing the size of the LTCC substrate. However, if the substrate area is reduced without increasing the number of layers of the ceramic substrate, it can be formed as an inner layer. Naturally, the number of passive elements is reduced, and a large number of external chip components are required. If we try to achieve both the number of passive elements that can be built in and the reduction in the area of the ceramic substrate, the number of layers of the ceramic substrate will have to be increased. There's a problem.

そこで本発明はこのような従来の実情に鑑みて提案されたものであり、薄型及び小型の利点を損なうことなく、表面実装されるチップ部品の部品点数を削減することが可能な多層セラミック基板を提供することを目的とする。   Therefore, the present invention has been proposed in view of such a conventional situation, and a multilayer ceramic substrate capable of reducing the number of chip components to be surface-mounted without impairing the advantages of thinness and small size is provided. The purpose is to provide.

前述の課題を解決するために、本発明の請求項1に係る多層セラミック基板は、セラミック基板が複数積層されるとともに内層に受動素子が形成される第1の積層体を備える多層セラミック基板であって、前記第1の積層体上に、前記セラミック基板より小面積のセラミック基板が複数積層されるとともに内層に受動素子が形成される第2の積層体が設けられることを特徴とする。   In order to solve the above-described problems, a multilayer ceramic substrate according to claim 1 of the present invention is a multilayer ceramic substrate including a first multilayer body in which a plurality of ceramic substrates are stacked and a passive element is formed in an inner layer. A second laminated body in which a plurality of ceramic substrates having a smaller area than the ceramic substrate are laminated and a passive element is formed in an inner layer is provided on the first laminated body.

以上のような多層セラミック基板によれば、平面状のセラミック基板を積層し受動素子が作りこまれた第1の積層体の一部の領域上に、セラミック基板を積層してなる第2の積層体を追加形成し、この第2の積層体の内層にも受動素子を立体的に作り込むようにする。従来のLTCC基板等の多層セラミック基板は、各セラミック基板を積層した積層体が平坦な形状とされており、内部に作り込める素子の数に制約を受けたが、本発明の多層セラミック基板においては、従来外付けチップ部品を実装していた空間に、さらに受動素子を作り込んだ第2の積層体を設けることで、多層セラミック基板内に作り込める素子数が大幅に増加する。このため、必要な外付けチップ部品の数が削減される。   According to the multilayer ceramic substrate as described above, the second laminate is formed by laminating the ceramic substrate on the partial region of the first laminate in which the planar ceramic substrate is laminated and the passive element is formed. An additional body is formed, and passive elements are three-dimensionally formed in the inner layer of the second laminate. In a conventional multilayer ceramic substrate such as an LTCC substrate, the laminated body in which each ceramic substrate is laminated has a flat shape and is limited by the number of elements that can be formed inside, but in the multilayer ceramic substrate of the present invention, The number of elements that can be formed in the multilayer ceramic substrate is greatly increased by providing the second laminated body in which passive elements are further formed in the space in which the conventional external chip component is mounted. For this reason, the number of necessary external chip components is reduced.

また、本発明の請求項2に係る多層セラミック基板は、前記第2の積層体の高さが、前記第1の積層体上に実装される半導体素子の高さ以下であることを特徴とする。   In the multilayer ceramic substrate according to claim 2 of the present invention, the height of the second laminated body is not more than the height of the semiconductor element mounted on the first laminated body. .

半導体素子は、多層セラミック基板の内層に作り込むことが難しく、且つ比較的厚みのある素子であるため、多層セラミック基板の表面に実装されたとき主にモジュール全体の高さを決定する。そこで、この半導体素子の高さを利用し、半導体素子の実装されない領域に半導体素子の高さ以下の第2の積層体を形成することで、モジュール全体の高さを変更することなく、基板内部に多数の素子を作り込むことができる。   Since the semiconductor element is an element that is difficult to be formed in the inner layer of the multilayer ceramic substrate and is relatively thick, when the semiconductor element is mounted on the surface of the multilayer ceramic substrate, the height of the entire module is mainly determined. Therefore, by utilizing the height of the semiconductor element, a second stacked body having a height equal to or lower than the height of the semiconductor element is formed in a region where the semiconductor element is not mounted. Many elements can be built in.

以上のように、本発明に係る多層セラミック基板によれば、セラミック基板を積層し受動素子を作り込んだ第1の積層体の一部の領域上に、さらに受動素子を作りこんだ第2の積層体を積み重ねることで、多層セラミック基板に作り込める素子の総数が大幅に増加し、その代わりに外付け部品として必要なチップ部品が減少する。第2の積層体は、従来の多層セラミック基板における例えば外付け部品を実装する空間に設けられる。したがって、本発明によれば、モジュール全体の高さ(厚み)や面積等の外形寸法を変更することなく多数の受動素子を内部に作り込むことができ、薄型及び小型等の利点を損なうことなく、部品点数の削減することが可能な多層セラミック基板を提供することができる。   As described above, according to the multilayer ceramic substrate of the present invention, the second element in which the passive element is further formed on the partial region of the first laminated body in which the ceramic substrate is laminated to form the passive element. By stacking the laminates, the total number of elements that can be made on the multilayer ceramic substrate is greatly increased, and instead, chip components required as external components are reduced. The second laminated body is provided in a space for mounting, for example, an external component in a conventional multilayer ceramic substrate. Therefore, according to the present invention, a large number of passive elements can be built inside without changing the external dimensions such as the height (thickness) and area of the entire module, and the advantages such as thinness and small size are not impaired. A multilayer ceramic substrate capable of reducing the number of components can be provided.

以下、本発明を適用した多層セラミック基板について、図面を参照しながら詳細に説明する。   Hereinafter, a multilayer ceramic substrate to which the present invention is applied will be described in detail with reference to the drawings.

図1は、本発明を適用した多層セラミック基板として、LTCC(low temperature co-fired ceramics)基板を備える高周波モジュールの一例を示す概略斜視図である。この高周波モジュールは、例えば移動体通信用の高周波モジュールである。LTCC基板からなる第1の積層体1は、略同一面積の多数のセラミック基板が複数積層されるとともに、各セラミック基板に形成された導電パターンにより、インダクタ、キャパシタ、フィルタ等の受動素子等が多数作り込まれている。各セラミック基板に形成された導体パターン間は、ビアホール等により電気的導通が確保される。なお、第1の積層体1の内部構成の図示は省略する。第1の積層体1を構成するLTCC基板は、例えばアルミナにガラス系の材料を添加することにより、従来のアルミナ基板が約1500℃程度の高温焼成を必要とするのに対し、例えば900℃以下の低温焼成を実現したものである。第1の積層体1の上には、半導体素子(IC)チップ2が表面実装される。   FIG. 1 is a schematic perspective view showing an example of a high-frequency module including an LTCC (low temperature co-fired ceramics) substrate as a multilayer ceramic substrate to which the present invention is applied. This high frequency module is a high frequency module for mobile communication, for example. The first laminated body 1 made of an LTCC substrate has a large number of ceramic substrates having substantially the same area and a large number of passive elements such as inductors, capacitors, filters, etc., depending on the conductive pattern formed on each ceramic substrate. It is built. Electrical conduction is ensured between the conductor patterns formed on each ceramic substrate by via holes or the like. In addition, illustration of the internal structure of the 1st laminated body 1 is abbreviate | omitted. The LTCC substrate that constitutes the first laminate 1 is, for example, 900 ° C. or less, whereas a conventional alumina substrate requires high-temperature firing at about 1500 ° C. by adding a glass-based material to alumina, for example. The low temperature firing is realized. A semiconductor element (IC) chip 2 is surface-mounted on the first laminate 1.

本発明においては、LTCC基板からなる第1の積層体1上に、LTCC基板からなる第2の積層体3が形成されている。第2の積層体3は、第1の積層体1を構成するセラミック基板よりも小面積であって、略同一面積の多数のセラミック基板が複数積層されるとともに、各セラミック基板に形成された導電パターンにより、インダクタ、キャパシタ、フィルタ等の受動素子等が多数作り込まれている。特に、第2の積層体3内には、大容量のキャパシタ等、高精度が要求されない素子を作り込むことが好ましい。各セラミック基板に形成された導体パターン間は、ビアホール等により電気的導通が確保される。第2の積層体3を構成するLTCC基板は、前記第1の積層体1と同様のものである。なお、第2の積層体3の内部構成の図示は省略する。   In the present invention, the second laminate 3 made of the LTCC substrate is formed on the first laminate 1 made of the LTCC substrate. The second laminated body 3 has a smaller area than the ceramic substrate constituting the first laminated body 1, and a plurality of ceramic substrates having substantially the same area are laminated, and the conductive material formed on each ceramic substrate. Many passive elements such as inductors, capacitors, filters, and the like are formed according to the pattern. In particular, it is preferable to build an element that does not require high accuracy, such as a large-capacity capacitor, in the second stacked body 3. Electrical conduction is ensured between the conductor patterns formed on each ceramic substrate by via holes or the like. The LTCC substrate constituting the second stacked body 3 is the same as the first stacked body 1. In addition, illustration of the internal structure of the 2nd laminated body 3 is abbreviate | omitted.

第2の積層体3は、第1の積層体1の一部の領域上であって、ICチップ2が実装されている領域以外に形成される。従来のLTCC基板を備えるモジュールにおいては、この第2の積層体3が設けられる空間には、大容量のキャパシタ等、LTCC基板の内層に作り込めない素子が、チップ部品として通常複数個、表面実装されている。   The second stacked body 3 is formed on a partial region of the first stacked body 1 and in a region other than the region where the IC chip 2 is mounted. In a module having a conventional LTCC substrate, a plurality of elements that cannot be formed in the inner layer of the LTCC substrate, such as a large-capacity capacitor, are usually mounted in the space where the second laminate 3 is provided. Has been.

図1に示すLTCC基板は、平坦ではなく、平板状の第1の積層体1の表面の一部の領域上に、さらに小面積の第2の積層体3が積み重ねられた構造とされる。第2の積層体3は、従来のモジュール構造においてチップ部品を実装していた空間に設けられ、且つこの空間に実装されていたチップ部品に対応する素子を内部に立体的に多数作り込むことができる。このため、本発明を適用した多層セラミック基板においては、第1の積層体1の面積を大型化することや、セラミック基板数を増やして第1の積層体1を厚膜化することなく、外付け部品の部品点数を従来に比べて大幅に削減することができる。   The LTCC substrate shown in FIG. 1 is not flat but has a structure in which a second laminated body 3 having a smaller area is stacked on a partial region of the surface of the flat first laminated body 1. The second laminated body 3 is provided in a space where chip components are mounted in the conventional module structure, and a large number of elements corresponding to the chip components mounted in this space can be formed three-dimensionally inside. it can. For this reason, in the multilayer ceramic substrate to which the present invention is applied, without increasing the area of the first laminated body 1 or increasing the number of ceramic substrates to increase the thickness of the first laminated body 1, The number of attached parts can be greatly reduced compared to the conventional one.

また、第2の積層体3の高さは、隣接する領域に配置されるICチップ2の高さ以下とされ、特に、第2の積層体3の高さは、ICチップ2の高さと略等しくされることが好ましい。通常のICチップの高さは、隣接する領域に配置される大容量キャパシタ等のチップ部品に比べて高いため、従来のチップ部品実装領域の上部空間には隙間があいていた。本発明では、ICチップ2の高さと第2の積層体3との高さを略等しくすることにより、従来無駄となっていた空間を有効利用し、モジュール全体の厚みを厚くすることなくより多くの受動素子をLTCC基板内部に作り込むことができる。また、ICチップ2の高さと第2の積層体3との高さを略等しくして、従来無駄となっていた空間を有効利用することにより、多くの受動素子を第2の積層体3内層に作り込めるので、第1の積層体1(多層セラミック基板全体)の面積を小型化することも可能である。   The height of the second stacked body 3 is set to be equal to or less than the height of the IC chip 2 disposed in the adjacent region. In particular, the height of the second stacked body 3 is substantially the same as the height of the IC chip 2. It is preferable to be equal. Since the height of a normal IC chip is higher than that of a chip component such as a large-capacitance capacitor arranged in an adjacent region, there is a gap in the upper space of the conventional chip component mounting region. In the present invention, by making the height of the IC chip 2 and the height of the second laminated body 3 substantially equal, it is possible to effectively use the space that has been wasted in the past, and to increase the thickness without increasing the thickness of the entire module. Can be built inside the LTCC substrate. Further, by making the height of the IC chip 2 and the height of the second laminated body 3 substantially equal to each other and effectively utilizing the space that has been wasted in the past, many passive elements can be formed in the inner layer of the second laminated body 3. Therefore, the area of the first laminated body 1 (entire multilayer ceramic substrate) can be reduced.

本発明を適用した多層セラミック基板を有する高周波モジュールの一例を示す概略斜視図である。It is a schematic perspective view which shows an example of the high frequency module which has a multilayer ceramic substrate to which this invention is applied. 従来の多層セラミック基板を有する高周波モジュールの一例を示す概略斜視図である。It is a schematic perspective view which shows an example of the high frequency module which has the conventional multilayer ceramic substrate.

符号の説明Explanation of symbols

1 第1の積層体
2 ICチップ
3 第2の積層体
DESCRIPTION OF SYMBOLS 1 1st laminated body 2 IC chip 3 2nd laminated body

Claims (2)

セラミック基板が複数積層されるとともに内層に受動素子が形成される第1の積層体を備える多層セラミック基板であって、
前記第1の積層体上に、前記セラミック基板より小面積のセラミック基板が複数積層されるとともに内層に受動素子が形成される第2の積層体が設けられることを特徴とする多層セラミック基板。
A multilayer ceramic substrate comprising a first laminate in which a plurality of ceramic substrates are laminated and a passive element is formed in an inner layer,
A multilayer ceramic substrate, wherein a second multilayer body in which a plurality of ceramic substrates having a smaller area than the ceramic substrate are stacked and a passive element is formed in an inner layer is provided on the first multilayer body.
前記第2の積層体の高さが、前記第1の積層体上に実装される半導体素子の高さ以下であることを特徴とする請求項1記載の多層セラミック基板。

The multilayer ceramic substrate according to claim 1, wherein a height of the second laminated body is equal to or lower than a height of a semiconductor element mounted on the first laminated body.

JP2004205888A 2004-07-13 2004-07-13 Multilayer ceramic substrate Pending JP2006032469A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008113402A (en) * 2006-05-09 2008-05-15 Mitsubishi Electric Corp amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008113402A (en) * 2006-05-09 2008-05-15 Mitsubishi Electric Corp amplifier

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