[go: up one dir, main page]

JP2006032195A - Electron emission source - Google Patents

Electron emission source Download PDF

Info

Publication number
JP2006032195A
JP2006032195A JP2004211206A JP2004211206A JP2006032195A JP 2006032195 A JP2006032195 A JP 2006032195A JP 2004211206 A JP2004211206 A JP 2004211206A JP 2004211206 A JP2004211206 A JP 2004211206A JP 2006032195 A JP2006032195 A JP 2006032195A
Authority
JP
Japan
Prior art keywords
single crystal
cathode
electron emission
emission source
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004211206A
Other languages
Japanese (ja)
Inventor
Ryozo Nonogaki
良三 野々垣
Yoshinori Terui
良典 照井
Morikazu Sakawa
盛一 坂輪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP2004211206A priority Critical patent/JP2006032195A/en
Publication of JP2006032195A publication Critical patent/JP2006032195A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06Sources
    • H01J2237/063Electron sources
    • H01J2237/06308Thermionic sources
    • H01J2237/06316Schottky emission

Landscapes

  • Electron Sources, Ion Sources (AREA)

Abstract

【課題】電子線露光装置やオージェ分光装置等に好適な、高い角電流密度動作においても全放射電流量が少ない電子放射源を提供する。
【解決手段】タングステン又はモリブデンの単結晶ニードルに、2A族、3A族及び4A族からなる群から選ばれる1種以上の金属元素を拡散するための供給源を設けてなる陰極と、前記単結晶ニードルを突出させる穴を有するサプレッサー電極とを具備する電子放射源であって、前記単結晶ニードルの端部が25°以上95°以下の円錐全角を有する円錐台形状であり、前記単結晶ニードルの端部の円錐面と単結晶ニードルの側面との境界部の位置が前記サプレッサー電極の穴から突出させていないことを特徴とする電子放射源。
【選択図】なし
The present invention provides an electron emission source suitable for an electron beam exposure apparatus, an Auger spectroscopic apparatus, etc., and having a small total radiation current amount even in a high angular current density operation.
A cathode comprising a tungsten or molybdenum single crystal needle provided with a supply source for diffusing one or more metal elements selected from the group consisting of 2A group, 3A group, and 4A group, and the single crystal An electron emission source comprising a suppressor electrode having a hole through which the needle protrudes, wherein an end of the single crystal needle has a truncated cone shape having a full cone angle of 25 ° to 95 °, An electron emission source characterized in that the position of the boundary portion between the conical surface of the end portion and the side surface of the single crystal needle is not projected from the hole of the suppressor electrode.
[Selection figure] None

Description

本発明は、走査型電子顕微鏡、オージェ電子分光、電子線露光機、ウェハ検査装置などの電子線応用機器に用いられる電子放射源、ことに電子線露光機用に好適な電子放射源に関する。 The present invention relates to an electron emission source used for electron beam application equipment such as a scanning electron microscope, Auger electron spectroscopy, an electron beam exposure machine, and a wafer inspection apparatus, and more particularly to an electron emission source suitable for an electron beam exposure machine.

近年、熱陰極よりも長寿命でより高輝度の電子ビームを得るために、タングステン単結晶の針状電極にジルコニウムと酸素との被覆層を設けた陰極を用いた電子放射源が用いられている(以下、ZrO/W電子放射源と記す)(非特許文献1参照)。
D.Tugg1e,J.Vac.Sci.Techno1.16,p1699(1979)。
In recent years, in order to obtain an electron beam with a longer life and higher brightness than a hot cathode, an electron emission source using a cathode in which a tungsten-crystal needle-like electrode is provided with a coating layer of zirconium and oxygen has been used. (Hereinafter referred to as a ZrO / W electron emission source) (see Non-Patent Document 1).
D. Tugg1e, J. et al. Vac. Sci. Techno 1.16, p1699 (1979).

ZrO/W電子放射源は、軸方位が<100>方位からなるタングステン単結晶の針状の陰極に、ジルコニウム及び酸素からなる被覆層(以下、ZrO被覆層という)を設け、該ZrO被覆層によってタングステン単結晶の<100>面の仕事関数を4.5eVから約2.8eVに低下させたもので、前記陰極の先端部に形成された<100>面に相当する微小な結晶面のみが電子放出領域となるので、従来の熱陰極よりも高輝度の電子ビームが得られ、しかも長寿命であるという特徴を有する。また冷電界放射電子源よりも安定で、低い真空度でも動作し、使い易いという特徴を有している(非特許文献2参照)。
M.J.Fransen,“On the E1ectron−Optica1 Properties of the ZrO/W Schottky Electron Emitter”,ADVANCES IN IMAGING AND ELECTRON PHYSICS,VOL.III,p91−166.1999 by Academic Press。
A ZrO / W electron emission source is provided with a coating layer made of zirconium and oxygen (hereinafter referred to as a ZrO coating layer) on a tungsten single crystal needle-shaped cathode having an axial orientation of <100>, and the ZrO coating layer The work function of the <100> plane of the tungsten single crystal is reduced from 4.5 eV to about 2.8 eV, and only the minute crystal plane corresponding to the <100> plane formed at the tip of the cathode is an electron. Since it becomes an emission region, it has a feature that an electron beam with higher brightness than that of a conventional hot cathode can be obtained and has a long life. Further, it is more stable than a cold field emission electron source, operates at a low vacuum, and is easy to use (see Non-Patent Document 2).
M.M. J. et al. Fransen, "On the E1 Electron-Optica 1 Properties of the ZrO / W Schottky Electron Emitter", ADVANCES IN IMAGEING AND ELECTRON PHYSICS, VOL. III, p91-166.1999 by Academic Press.

ZrO/W電子放射源は、図1に示すように、絶縁碍子5に固定された導電端子4に設けられたタングステン製のフィラメント3の所定の位置に電子ビームを放射するタングステンの<100>方位の針状の陰極1が溶接等により固着されている。陰極1の一部には、ジルコニウムと酸素の供給源2が設けられている。図示していないが陰極1の表面はZrO被覆層で覆われている。 As shown in FIG. 1, the ZrO / W electron radiation source is a <100> orientation of tungsten that emits an electron beam to a predetermined position of a tungsten filament 3 provided on a conductive terminal 4 fixed to an insulator 5. The needle-like cathode 1 is fixed by welding or the like. A part of the cathode 1 is provided with a supply source 2 of zirconium and oxygen. Although not shown, the surface of the cathode 1 is covered with a ZrO coating layer.

陰極1はフィラメント3により通電加熱されて一般に1800K程度の温度下で使用されるので、陰極1の表面のZrO被覆層は蒸発により消耗する。しかし、供給源2よりジルコニウム及び酸素が拡散することにより、陰極電極1の表面に連続的に供給されるので、結果的にZrO被覆層が維持される。 Since the cathode 1 is energized and heated by the filament 3 and is generally used at a temperature of about 1800 K, the ZrO coating layer on the surface of the cathode 1 is consumed by evaporation. However, since zirconium and oxygen diffuse from the supply source 2 and are continuously supplied to the surface of the cathode electrode 1, the ZrO coating layer is maintained as a result.

ZrO/W電子放射源の陰極1の先端部はサプレッサー電極6と引き出し電極7の間に配置されて使用される(図2参照)。陰極1には引き出し電極7に対して負の高電圧が印加され、更にサプレッサー電極6には陰極1に対して数百ボルト程度の負の電圧が印加され、フィラメント3からの余剰電流を抑制する。 The tip of the cathode 1 of the ZrO / W electron radiation source is used by being disposed between the suppressor electrode 6 and the extraction electrode 7 (see FIG. 2). A negative high voltage is applied to the cathode 1 with respect to the extraction electrode 7, and a negative voltage of about several hundred volts is applied to the suppressor electrode 6 with respect to the cathode 1, thereby suppressing excess current from the filament 3. .

ZrO/W電子放射源は低加速電圧で用いられる測長SEMやウェハ検査装置においては、プローブ電流が安定していて且つエネルギー幅の拡がりが抑えられるという理由で0.1〜0.2mA/srの角電流密度で動作される。 The ZrO / W electron radiation source is 0.1 to 0.2 mA / sr in a length measurement SEM or wafer inspection apparatus used at a low acceleration voltage because the probe current is stable and the spread of the energy width is suppressed. It is operated at an angular current density of.

一方、電子線露光装置、及びオージェ分光装置等においては、スループットが重視されるために0.4mA/sr程度の高い角電流密度で動作される。このようなスループットを重視する用途では、更に高い角電流密度動作が望まれ、1.0mA/srもの高い角電流密度での動作が要求されることがある。 On the other hand, an electron beam exposure apparatus, an Auger spectroscopic apparatus, and the like are operated at a high angular current density of about 0.4 mA / sr because throughput is important. In such applications that place importance on throughput, higher angular current density operation is desired, and operation at an angular current density as high as 1.0 mA / sr may be required.

しかしながら、ZrO/W電子放射源においては、(1)高角電流密度動作時に高々1.0mA/sr程度の角電流密度が上限であり、(2)この時、陰極と引き出し電極間に印加される引き出し電圧が4kV以上と大きく、チップ先端での電界強度が0.4〜1.0×10V/mと著しく高くなり、アーク放電による故障頻度が高くなる(非特許文献3参照)。
D.W.Tugg1e,J.Vac.Sci.Techno1.B3(1), p220(1985)。
However, in the ZrO / W electron emission source, (1) an angular current density of about 1.0 mA / sr is the upper limit at the time of high angular current density operation, and (2) at this time, it is applied between the cathode and the extraction electrode. The extraction voltage is as high as 4 kV or more, the electric field strength at the tip of the chip is remarkably high at 0.4 to 1.0 × 10 9 V / m, and the failure frequency due to arc discharge increases (see Non-Patent Document 3).
D. W. Tugg1e, J. et al. Vac. Sci. Techno1. B3 (1), p220 (1985).

この欠点を解決するために、タングステン陰極1とサプレッサー電極6と引き出し電極7からなる電子放射源において、該陰極1の頂点が直径5μm以上の面を有する円錐台形状であることを特徴とする電子放射源が提案されている(特許文献1参照)。
特願2003−37920公報。
In order to solve this drawback, an electron emission source comprising a tungsten cathode 1, a suppressor electrode 6, and an extraction electrode 7 is characterized in that the top of the cathode 1 has a truncated cone shape having a surface having a diameter of 5 μm or more. A radiation source has been proposed (see Patent Document 1).
Japanese Patent Application No. 2003-37920.

ZrO/W電子放射源は(1)高角電流密度動作時に高々1.0mA/sr程度の角電流密度が上限であり、(2)この時、陰極と引さ出し電極問に印加される引き出し電圧が4kV以上と大きく、チップ先端での電界強度が0.4〜1.0×10V/mと著しく高くなり、アーク放電による故障頻度が高くなるといった問題点がある。 The ZrO / W electron emission source (1) has an angular current density of about 1.0 mA / sr at the maximum at the time of high angular current density operation, and (2) the extraction voltage applied to the cathode and the extraction electrode at this time. Is as high as 4 kV or more, the electric field strength at the tip of the chip is remarkably increased to 0.4 to 1.0 × 10 9 V / m, and the failure frequency due to arc discharge increases.

これらを解決する円錐台形状のタングステン陰極を用いた電子放射源では、低い引き出し電圧において1mA/sr以上の高い角電流密度で動作し、全放射電流が数10μA程度と低く信頼性が高くなるという特徴をもつ。 An electron radiation source using a truncated-cone-shaped tungsten cathode that solves these problems operates at a high angular current density of 1 mA / sr or higher at a low extraction voltage, and the total radiation current is as low as several tens of μA, resulting in high reliability. Has characteristics.

しかし、更に高い角電流密度で動作させるために引き出し電圧を高くすると、ある引き出し電圧から急激に余剰電流が増え、全放射電流が数100μA程度まで増加してしまうといった問題が生じている。 However, when the extraction voltage is increased in order to operate at a higher angular current density, there is a problem that the surplus current increases suddenly from a certain extraction voltage and the total radiation current increases to about several hundred μA.

この余剰電流の増加は、構成する装置部材からの脱ガスを誘起し、装置真空度の低下をもたらし、信頼性を損ねるものである。 This increase in surplus current induces degassing from the constituent device members, causes a reduction in the degree of equipment vacuum, and impairs reliability.

本発明者は、上記の事情に鑑みていろいろ検討した結果、この余剰電流増加の原因が円錐台形状の陰極の側面と円錐面との境界部からの電子放射に起因していること、そして電極の配置を調整することによって、前記課題を解決することができるという知見を得て、本発明に至ったものである。 As a result of various studies in view of the above circumstances, the present inventor has found that the cause of the increase in surplus current is due to electron emission from the boundary between the side surface of the truncated cone-shaped cathode and the conical surface, and the electrode The present inventors have obtained the knowledge that the above-mentioned problems can be solved by adjusting the arrangement of the present invention, and have reached the present invention.

即ち、本発明は、タングステン又はモリブデンの単結晶ニードルに、2A族、3A族及び4A族からなる群から選ばれる1種以上の金属元素を拡散するための供給源を設けてなる陰極と、前記単結晶ニードルを突出させる穴を有するサプレッサー電極とを具備する電子放射源であって、前記単結晶ニードルの端部が25°以上95°以下の円錐全角を有する円錐台形状であり、前記単結晶ニードルの端部の円錐面と単結晶ニードルの側面との境界部の位置が前記サプレッサー電極の穴から突出させていないことを特徴とする電子放射源であり、好ましくは、円錐台の上面の直径が5μm以上200μm以下であることを特徴とする前記の電子放射源である。 That is, the present invention provides a cathode comprising a tungsten or molybdenum single crystal needle provided with a supply source for diffusing one or more metal elements selected from the group consisting of 2A group, 3A group and 4A group, An electron emission source comprising a suppressor electrode having a hole for projecting a single crystal needle, wherein the end of the single crystal needle has a truncated cone shape having a full cone angle of 25 ° to 95 °, and the single crystal An electron emission source characterized in that the position of the boundary between the conical surface at the end of the needle and the side surface of the single crystal needle is not protruded from the hole of the suppressor electrode, preferably the diameter of the upper surface of the truncated cone Is from 5 μm to 200 μm in the electron emission source.

また、本発明は、前記金属元素がジルコニウムまたはチタンであることを特徴とする電子放射源であり、好ましくは、陰極を構成する単結晶の<100>方位と、前記上面の法線の向きとが、2°以内の角度差であることを特徴とする電子放射源である。 Further, the present invention is an electron emission source characterized in that the metal element is zirconium or titanium, and preferably, the <100> orientation of the single crystal constituting the cathode and the direction of the normal to the upper surface Is an electron emission source characterized in that the angle difference is within 2 °.

本発明の電子放射源は、陰極の円錐面と棒側面との境界部の位置を前記サプレッサー電極の穴から突出させないことにより、高角電流密度で動作を維持しつつ、全放射電流は比較例に比べ一桁小さく、高い信頼性を期待できるという特徴がある。また、本発明の電子放射源は、従来公知の電子放射源とほぼ同程度の角電流密度で動作し、その時の全放射電流は従来公知の電子放射源と比べて小さく、高い信頼性を期待できることが明らかであり、高い動作角電流密度の放射電流が得られる特徴がある。 The electron emission source of the present invention does not project the position of the boundary between the conical surface of the cathode and the side surface of the rod from the hole of the suppressor electrode, thereby maintaining the operation at a high angular current density, and the total radiation current is a comparative example. It is one order of magnitude smaller and can be expected to have high reliability. In addition, the electron emission source of the present invention operates at an angular current density almost equal to that of a conventionally known electron emission source, and the total emission current at that time is smaller than that of a conventionally known electron emission source, and high reliability is expected. Obviously, it is possible to obtain a radiation current with a high operating angular current density.

本発明の具体的な実施態様としては、タングステンまたはモリブデン単結晶<100>方位のロッド状陰極1の端部に機械研磨または電解研磨によりに円錐部8を設け、更にその頂点をダイヤモンド研磨剤が被覆された研磨フィルムにより研磨する或いは集束ガリウムイオンビーム装置を適用して頂点を切断し平坦部9を設けるものである。 As a specific embodiment of the present invention, a conical portion 8 is provided by mechanical polishing or electrolytic polishing at the end of a rod-like cathode 1 of tungsten or molybdenum single crystal <100> orientation, and a diamond abrasive is applied at the apex thereof. Polishing with a coated polishing film or applying a focused gallium ion beam device to cut the apex and provide a flat portion 9.

本発明に於いて、集束ガリウムイオンビームで加工する際にニフッ化キセノンガスを導入すると加工時間を短縮することが可能である。また、円錐部8の全角は25°以上95°以下で平坦部9(又は上面部分)の直径は5〜200μmである。更に、陰極1の端部に形成された平坦な電子放射面の法線は<100>方位と2°以内の角度差に収められることが好ましい。 In the present invention, when xenon difluoride gas is introduced when processing with a focused gallium ion beam, the processing time can be shortened. Moreover, the full angle of the cone part 8 is 25 degrees or more and 95 degrees or less, and the diameter of the flat part 9 (or upper surface part) is 5-200 micrometers. Furthermore, it is preferable that the normal line of the flat electron emission surface formed at the end of the cathode 1 is within an angle difference of 2 ° or less with the <100> orientation.

タングステンまたはモリブデン単結晶からなる<100>方位のロッドは陰極として機能し、その表面は2A、3A、4A族から選ばれた金属元素と酸素により被覆される。Zr−Oの系を例にとると、水素化ジルコニウムを粉砕して有機溶剤と混合しペースト状にしたものを陰極の一部に塗布して、1×10一6Torr程度の酸素雰囲気中で陰極を加熱してZrHを熱分解し、更に酸化してジルコニウムと酸素の供給源を形成すると共に陰極の表面をジルコニウムと酸素で被覆する。 A <100> -oriented rod made of tungsten or molybdenum single crystal functions as a cathode, and its surface is covered with a metal element selected from the groups 2A, 3A, and 4A and oxygen. Taking the Zr-O system as an example, zirconium hydride is pulverized and mixed with an organic solvent to form a paste, which is applied to a part of the cathode, in an oxygen atmosphere of about 1 × 10 16 Torr. The cathode is heated to thermally decompose ZrH 2 and further oxidized to form a supply source of zirconium and oxygen, and the surface of the cathode is coated with zirconium and oxygen.

この陰極を引き出し電極7とサプレッサー電極6の間に配置して、引き出し電極に対して陰極に数キロボルトの負の高電圧を印加し、サプレッサー電極6には陰極1に対して数百ボルトの負の電圧を印加すると共に陰極1を1500〜1900Kに加熱することにより電子放射を行なうが、本発明によれば、陰極の円錐面と単結晶ニードルの側面との境界部19の位置がサプレッサー電極6の穴の面20から突出させないようにする。 This cathode is arranged between the extraction electrode 7 and the suppressor electrode 6, a negative high voltage of several kilovolts is applied to the extraction electrode with respect to the cathode 1. And the cathode 1 is heated to 1500 to 1900K to emit electrons. According to the present invention, the position of the boundary portion 19 between the conical surface of the cathode and the side surface of the single crystal needle is the suppressor electrode 6. Do not protrude from the surface 20 of the hole.

もし、境界部19の位置がサプレッサー電極6の穴の面20から突出させた場合、引き出し電圧を高くしていくと、ある引き出し電圧から急激に余剰電流が増え、全放射電流が数100μA程度まで増加してしまう。これは、高い引き出し電圧を印加すると境界部19に電子放射し得る電界が生じ、余剰電流として放射されることによると考えられる。 If the boundary portion 19 protrudes from the hole surface 20 of the suppressor electrode 6, if the extraction voltage is increased, the surplus current suddenly increases from a certain extraction voltage, and the total radiation current reaches about several hundred μA. It will increase. This is considered to be due to the fact that, when a high extraction voltage is applied, an electric field that can radiate electrons is generated in the boundary portion 19 and is radiated as a surplus current.

本発明では、境界部19の位置がサプレッサー電極6の穴の面20から突出させないことで、サプレッサーによる電界のシールド効果が境界部19に対して効果的に働き、余剰電流を抑制することが可能となる。 In the present invention, since the position of the boundary portion 19 does not protrude from the hole surface 20 of the suppressor electrode 6, the shielding effect of the electric field by the suppressor works effectively on the boundary portion 19, and it is possible to suppress excess current. It becomes.

本発明の電子放射源は、1mA/sr以上の高い角電流密度で動作し、かつ、陰極の円錐面と単結晶ニードルの側面との境界部をサプレッサー電極の穴の面から突出させないようにすることで、電界のシールド効果が境界部に対して効果的に働き、余剰電流が極めて低いため信頼性が高いという特徴を有している。 The electron emission source of the present invention operates at a high angular current density of 1 mA / sr or more, and prevents the boundary between the conical surface of the cathode and the side surface of the single crystal needle from protruding from the hole surface of the suppressor electrode. Thus, the shielding effect of the electric field works effectively on the boundary portion, and the surplus current is extremely low, so that the reliability is high.

(実施例1、2、比較例)絶縁碍子にロウ付けされた導電端子にタングステン製のフィラメントをスポット溶接により固定した。<100>方位の単結晶タングステンチップの端部にダイヤモンドペーストと研磨盤を用いて全角が90°の円錐部を形成し、更に円錐部の頂点をダイヤモンド研磨剤で被覆した研磨フィルムで研磨して直径20μmの平坦部を形成した。このロッドを前記フィラメントにスポット溶接により取り付けた。このロッドは陰極として機能する。尚、実施例1では直径0.4mm、実施例2及び比較例では直径0.3mmの単結晶タングステンチップを用いた。 (Examples 1 and 2, Comparative Example) A filament made of tungsten was fixed to a conductive terminal brazed to an insulator by spot welding. A conical portion with a full angle of 90 ° is formed at the end of a single crystal tungsten chip of <100> orientation using a diamond paste and a polishing disk, and further polished with a polishing film coated with a diamond abrasive at the apex of the conical portion. A flat part having a diameter of 20 μm was formed. This rod was attached to the filament by spot welding. This rod functions as a cathode. In Example 1, a single crystal tungsten chip having a diameter of 0.4 mm and in Example 2 and Comparative Example having a diameter of 0.3 mm were used.

水素化ジルコニウムを粉砕して酢酸イソアミルと混合しぺースト状にしたものを陰極の一部に塗布した。酢酸イソアミルが蒸発した後、図2に示す装置に導入した。 Zirconium hydride was pulverized and mixed with isoamyl acetate to form a paste, which was applied to a part of the cathode. After the isoamyl acetate evaporated, it was introduced into the apparatus shown in FIG.

陰極の先端はサプレッサー電極と引き出し電極との間に配置される。サプレッサー電極と引き出し電極の距離は0.8mm、引き出し電極の孔径は0.8mm、サプレッサー電極の孔径は0.8mmとした。尚、陰極の先端とサプレッサー電極の距離については、実施例1及び比較例では0.15mm、実施例2では0.10mmとした。この電極構成により、陰極の円錐面と単結晶ニードルの側面との境界部が、サプレッサー電極の穴の面に対して、実施例1、実施例2とも0.03mm奥に位置し、比較例では、サプレッサー電極の穴の面から0.02mm突出した所に境界部が位置することになる。 The tip of the cathode is disposed between the suppressor electrode and the extraction electrode. The distance between the suppressor electrode and the extraction electrode was 0.8 mm, the hole diameter of the extraction electrode was 0.8 mm, and the hole diameter of the suppressor electrode was 0.8 mm. The distance between the cathode tip and the suppressor electrode was 0.15 mm in Example 1 and Comparative Example, and 0.10 mm in Example 2. With this electrode configuration, the boundary between the conical surface of the cathode and the side surface of the single crystal needle is located 0.03 mm deep in both the first and second embodiments with respect to the hole surface of the suppressor electrode. The boundary portion is located at a position protruding 0.02 mm from the hole surface of the suppressor electrode.

フィラメントはフィラメント加熱電源に接続され、更に高圧電源に接続され、引き出し電極に対して負の高電圧、即ち引き出し電圧Vexが印加される。また、サプレッサー電極はバイアス電源に接続され、陰極とフィラメントに対して更に負の電圧、バイアス電圧Vb、が印加される。電子源からの全放射電流Itは高圧電源とアース間に置かれた電流計により測定される。陰極の先端から放射した電子ピームは引き出し電極の孔を通過して、蛍光板に到達する。蛍光板の中央にはアパーチャー(小孔)が有り、通過してカップ状の電極に到達したプローブ電流Ipは微小電流計により測定される。なおアパーチャーと陰極の先端との距離とアパーチャーの内径から算出される立体角をωとすると角電流密度はIp/ωとなる。 The filament is connected to a filament heating power source and further connected to a high voltage power source, and a negative high voltage, that is, an extraction voltage Vex is applied to the extraction electrode. The suppressor electrode is connected to a bias power source, and a negative voltage and a bias voltage Vb are further applied to the cathode and the filament. The total emission current It from the electron source is measured by an ammeter placed between the high voltage power source and ground. The electron beam emitted from the tip of the cathode passes through the hole of the extraction electrode and reaches the fluorescent screen. There is an aperture (small hole) in the center of the fluorescent plate, and the probe current Ip passing through and reaching the cup-shaped electrode is measured by a microammeter. If the solid angle calculated from the distance between the aperture and the tip of the cathode and the inner diameter of the aperture is ω, the angular current density is Ip / ω.

続いて装置内を3×10−10Torr(4×10−8Pa)の超高真空中としてフィラメントに通電して陰極を1800Kに加熱し、ZrHを熱分解して金属ジルコニウムとした。更に酸素ガスを導入して装置内を3×10−6Torr(4×10−4Pa)として金属ジルコニウムを酸化し、ジルコニウムと酸素の供給源を形成した。 Subsequently, the inside of the apparatus was placed in an ultrahigh vacuum of 3 × 10 −10 Torr (4 × 10 −8 Pa), and the filament was energized to heat the cathode to 1800 K, and ZrH 2 was pyrolyzed to form metallic zirconium. Further, oxygen gas was introduced to make the inside of the apparatus 3 × 10 −6 Torr (4 × 10 −4 Pa) to oxidize metal zirconium to form a supply source of zirconium and oxygen.

再度装置内を3×10−10Torr(4×10−8Pa)の超高真空中として陰極を1800Kに維持したままサプレッサーにバイアス電圧Vb=300Vを印加し、続いて引き出し電圧Vexを2.5kVの高電圧を印加して数時間保持し、放射電流が安定したところで、各引出し電圧Vexにおける全放射電流Itとプローブ電流Ipを測定し、角電流密度を算出した。 Again, the inside of the apparatus was placed in an ultrahigh vacuum of 3 × 10 −10 Torr (4 × 10 −8 Pa), the bias voltage Vb = 300 V was applied to the suppressor while maintaining the cathode at 1800 K, and then the extraction voltage Vex was set to 2. When a high voltage of 5 kV was applied and held for several hours and the radiation current was stabilized, the total radiation current It and the probe current Ip at each extraction voltage Vex were measured, and the angular current density was calculated.

引き出し電圧−角電流密度、全放射電流の測定結果を図4に示す。陰極の円錐面と単結晶ニードルの側面との境界部が、サプレッサー電極の穴の面に対して突出している比較例では、引き出し電圧Vexが1.2kV以上で余剰電流に起因した全放射電流が急激に増えている。一方、陰極の円錐面と単結晶ニードルの側面との境界部が、サプレッサー電極の穴の面に対して突出させていない実施例1及び実施例2では、引き出し電圧Vexが2.5kVまで全放射電流が数十μAの低い値を示し、余剰電流が抑えられていることが明らかである。 FIG. 4 shows the measurement results of the extraction voltage-angular current density and the total radiation current. In the comparative example in which the boundary between the conical surface of the cathode and the side surface of the single crystal needle protrudes from the surface of the hole of the suppressor electrode, the total radiation current caused by the surplus current when the extraction voltage Vex is 1.2 kV or more. It is increasing rapidly. On the other hand, in Example 1 and Example 2 in which the boundary between the conical surface of the cathode and the side surface of the single crystal needle is not projected with respect to the surface of the hole of the suppressor electrode, the extraction voltage Vex is fully radiated up to 2.5 kV. It is clear that the current shows a low value of several tens of μA, and the surplus current is suppressed.

本発明の電子放射源は、陰極の円錐面と棒側面との境界部の位置を前記サプレッサー電極の穴から突出させないことにより、高角電流密度で動作を維持しつつ、全放射電流は比較例に比べ一桁小さく、高い信頼性を期待できるという特徴があり、電子露光用電子源を初め多くの電子源として有用である。また、本発明の電子放射源は、従来公知の電子放射源とほぼ同程度の角電流密度で動作し、その時の全放射電流は従来公知の電子放射源に比べて小さく、高い信頼性を期待できることが明らかである。また、従来のZrO/W電子放射源に比較して高い動作角電流密度の放射電流が得られる特徴があり、電子露光用電子源を初め多くの電子源として有用である。 The electron emission source of the present invention does not project the position of the boundary between the conical surface of the cathode and the side surface of the rod from the hole of the suppressor electrode, thereby maintaining the operation at a high angular current density, and the total radiation current is a comparative example. It is one order of magnitude smaller and can be expected to have high reliability, and is useful as an electron source for electron exposure, including many electron sources. In addition, the electron emission source of the present invention operates at an angular current density almost equal to that of a conventionally known electron emission source, and the total emission current at that time is smaller than that of a conventionally known electron emission source, and high reliability is expected. Obviously you can. In addition, there is a feature that a radiation current having a higher operating angular current density can be obtained as compared with a conventional ZrO / W electron radiation source, and an electron source for electron exposure is useful as many electron sources at the beginning.

ZrO/W電子放射源の構造図。The structural diagram of a ZrO / W electron emission source. 電子放射特性の評価装置の構成図。The block diagram of the evaluation apparatus of an electron emission characteristic. 陰極の拡大図。The enlarged view of a cathode. 引き出し電圧−角電流密度、全放射電流の測定結果(実施例1、2並びに比較例)。Measurement results of extraction voltage-angular current density and total radiation current (Examples 1 and 2 and Comparative Example).

符号の説明Explanation of symbols

1: 陰極
2: 供給源
3: フィラメント
4: 導電端子
5: 絶縁碍子
6: サプレッサー電極
7: 引き出し電極
8: (円錐台部の)円錐部
9: 平坦部(円錐台部の上面部)
10: 蛍光板
11: アパーチャー
12: カップ状電極
13: プローブ電流測定用微小電流計
14: バイアス電源
15: 高圧電源
16: フィラメント加熱電源
17: 全放射電流測定用電流計
18: 放射電子線
19: 陰極の円錐面と側面との境界部
20: サプレッサー電極の穴面
1: Cathode 2: Supply source 3: Filament 4: Conductive terminal 5: Insulator 6: Suppressor electrode 7: Extraction electrode 8: Conical part (of the truncated cone part) 9: Flat part (upper surface part of the truncated cone part)
10: Fluorescent plate 11: Aperture 12: Cup-shaped electrode 13: Micro current meter 14 for probe current measurement 14: Bias power source 15: High voltage power source 16: Filament heating power source 17: Ammeter for total radiation current measurement 18: Radiation electron beam 19: Cathode 20 between the conical surface and the side surface of the electrode: hole surface of the suppressor electrode

Claims (4)

タングステン又はモリブデンの単結晶ニードルに、2A族、3A族及び4A族からなる群から選ばれる1種以上の金属元素を拡散するための供給源を設けてなる陰極と、前記単結晶ニードルを突出させる穴を有するサプレッサー電極とを具備する電子放射源であって、前記単結晶ニードルの端部が25°以上95°以下の円錐全角を有する円錐台形状であり、前記単結晶ニードルの端部の円錐面と単結晶ニードルの側面との境界部の位置が前記サプレッサー電極の穴から突出させていないことを特徴とする電子放射源。 A single crystal needle of tungsten or molybdenum is provided with a cathode provided with a supply source for diffusing one or more metal elements selected from the group consisting of 2A group, 3A group and 4A group, and the single crystal needle is protruded An electron emission source comprising a suppressor electrode having a hole, wherein the end of the single crystal needle has a truncated cone shape having a full cone angle of 25 ° to 95 °, and a cone at the end of the single crystal needle An electron emission source, wherein a position of a boundary portion between the surface and the side surface of the single crystal needle is not protruded from the hole of the suppressor electrode. 円錐台の上面の直径が5μm以上200μm以下であることを特徴とする請求項1記載の電子放射源 2. The electron emission source according to claim 1, wherein the diameter of the upper surface of the truncated cone is not less than 5 μm and not more than 200 μm. 金属元素がジルコニウムまたはチタンであることを特徴とする請求項1又は請求項2記載の電子放射源。 3. The electron emission source according to claim 1, wherein the metal element is zirconium or titanium. 陰極を構成する単結晶の<100>方位と、前記上面の法線の向きとが、2°以内の角度差であることを特徴とする請求項1、請求項2又は請求項3記載の電子放射源。 4. The electron according to claim 1, wherein the <100> orientation of the single crystal constituting the cathode and the direction of the normal of the upper surface are an angle difference within 2 °. Radiation source.
JP2004211206A 2004-07-20 2004-07-20 Electron emission source Pending JP2006032195A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004211206A JP2006032195A (en) 2004-07-20 2004-07-20 Electron emission source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004211206A JP2006032195A (en) 2004-07-20 2004-07-20 Electron emission source

Publications (1)

Publication Number Publication Date
JP2006032195A true JP2006032195A (en) 2006-02-02

Family

ID=35898278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004211206A Pending JP2006032195A (en) 2004-07-20 2004-07-20 Electron emission source

Country Status (1)

Country Link
JP (1) JP2006032195A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008038684A1 (en) 2006-09-27 2008-04-03 Denki Kagaku Kogyo Kabushiki Kaisha Electron source
JP2008204868A (en) * 2007-02-21 2008-09-04 Nano Geometry Kenkyusho:Kk Manufacturing method of field emission electron gun, field emission electron gun by the manufacturing method, charged particle beam device, method of reproducing field emission electron gun, field emission electron gun by the reproducing method, charged particle beam device, and plural Split emitter electrode
JP2023093552A (en) * 2016-08-08 2023-07-04 エーエスエムエル ネザーランズ ビー.ブイ. Electron emitter and method of fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008038684A1 (en) 2006-09-27 2008-04-03 Denki Kagaku Kogyo Kabushiki Kaisha Electron source
JP2008204868A (en) * 2007-02-21 2008-09-04 Nano Geometry Kenkyusho:Kk Manufacturing method of field emission electron gun, field emission electron gun by the manufacturing method, charged particle beam device, method of reproducing field emission electron gun, field emission electron gun by the reproducing method, charged particle beam device, and plural Split emitter electrode
JP2023093552A (en) * 2016-08-08 2023-07-04 エーエスエムエル ネザーランズ ビー.ブイ. Electron emitter and method of fabricating the same

Similar Documents

Publication Publication Date Title
JP4971342B2 (en) Electron source
US20100019649A1 (en) Electron source
JP5363413B2 (en) Electron source
JP4210131B2 (en) Electron source and method of using electron source
JPWO2008140080A1 (en) Electron source
JP5171836B2 (en) Electron source and electron beam device
EP2242084B1 (en) Method of manufacturing an electron source
JP4792404B2 (en) Manufacturing method of electron source
WO2007148507A1 (en) Electron source
JP2006032195A (en) Electron emission source
JPWO2004073010A1 (en) Electron gun
WO2011040326A1 (en) Rod for electron source, electron source, and electronic appliance
JP4032057B2 (en) Manufacturing method of electron source
JP2008004411A (en) Electron source
JP2005332677A (en) How to make and use electron sources
JP4874758B2 (en) Electron source
JP4368501B2 (en) Usage of electron emission cathode
JP2005207945A (en) X-ray inspection apparatus using a cathode containing a boride of Ce (cerium) or Gd (gadolinium)
JP2001319559A (en) Electron emission cathode
JP2010061898A (en) Electron source and electronic equipment

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061030

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090729

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090804

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20091201