JP2006004682A - Voltage determination method, voltage determination component, power interrupting method, and power interrupting device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a voltage determination method and a voltage determination component which are simple in structure and steady in operation, and a power interrupting method and a power interrupting device. <P>SOLUTION: The voltage determination method is provided with, in place of a conventional voltage determination method of determining the voltage exceeding a prescribed value, a diode preparation process for preparing a diode having a Zener voltage nearly equal to a prescribed value, a bimetal preparation process for preparing a bimetal which can change its state from a normal temperature state to a high temperature state by receiving heat generated from the diode, a B contact preparation process for preparing a B contact which turns into a non-switch-on state from a switch-on state interlocked with the state change of the bimetal from the normal temperature state to the high temperature state, a first circuit preparation process for preparing a first circuit in which a conductive material which melts down when the temperature becomes a prescribed value or more by receiving heat generated from the diode is bridged over a pair of terminals, and a voltage impression process for impressing a voltage on the diode in the reverse direction. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a voltage determination method and a voltage determination component for determining that a voltage exceeds a predetermined value, and to cut off the supply of power when the voltage of power supplied from a power source to a load exceeds a predetermined value. The present invention relates to a power cutoff method and a power cutoff device. In particular, the present invention relates to a power cutoff method and a power cutoff device suitable for charging a rechargeable battery.

Various devices are required to determine whether the voltage is a predetermined value.
For example, when charging a rechargeable battery, it is necessary to cut off the supply of power when the charging voltage reaches a predetermined value in order to prevent overcharging.
Conventional overcharge protection devices include thermal switch type protection devices and electrical control circuit type protection devices.
The thermal switch type protection device closes the charging circuit via a thermal switch that operates by sensing the temperature when the battery is fully charged.
The thermal switch type protection device sets the temperature of the battery case when it is fully charged as the detection value, watches the temperature of the battery case to the detection value, and does not detect the voltage directly. Protection accuracy is not sufficient due to the delay in temperature detection, the correlation between the temperature and voltage of the full charge time is low depending on the type of battery, and the detected temperature does not necessarily correspond to the desired voltage. There is a problem that.
The electric control circuit type protection device detects the charging voltage with a voltage sensor, and stops charging when it reaches a predetermined value.
In the electric control circuit type protection device, the protection accuracy is high, but it is expensive due to the components and is not always economical.

JP 2001-186676 A JP 2002-33134 A

  The present invention has been devised in view of the above-described problems, and aims to provide a voltage determination method, a voltage determination component, a power interruption method, and a power interruption device that are simple in configuration and reliable in operation.

  In order to achieve the above object, a voltage determination method for determining whether a voltage according to the present invention exceeds a predetermined value, a diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value, A bimetal preparation process for preparing a bimetal capable of changing from a normal temperature state to a high temperature state in response to the generated heat, and a state in which the bimetal is changed from a normal temperature state to a high temperature state in conjunction with a change from a current state to a non-energized state A B contact preparation step for preparing a B contact to be prepared, and a first circuit for bridging a pair of terminals with a conductive material that melts when receiving a heat generated from the diode and reaches a temperature equal to or higher than a predetermined value. A circuit preparation step and a voltage application step of applying a voltage to the diode in the reverse direction are provided.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the B contact is the normal temperature of the bimetal. A pair of conductive materials that are melted when the first circuit receives heat generated from the diode and reaches a temperature higher than a predetermined value in conjunction with the state change from the state to the high temperature state. When the voltage is applied to the diode in the reverse direction, current flows in the reverse direction when the voltage exceeds a predetermined value, the diode generates heat, and the B contact is linked to the change in the state of the bimetal. Can be determined that the voltage exceeds a predetermined value with a simple structure, even when no current is applied and no change in the state of the bimetal occurs.

  In order to achieve the above object, a voltage determination method for determining whether a voltage according to the present invention exceeds a predetermined value, a diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value, A bimetal preparation process for preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving generated heat, and an energized state from a non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state. A contact preparing step for preparing an A contact to become, a self holding circuit preparing step for preparing a self holding circuit for holding a high temperature state of the bimetal when the A contact is energized, and a voltage in a reverse direction to the diode. And a voltage applying step to be applied.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the A contact is at the normal temperature of the bimetal. Since the self-holding circuit changes from the non-energized state to the energized state in conjunction with the state change from the state to the high temperature state, and the A contact is energized, the high temperature state of the bimetal is maintained. When applied in the direction, current flows in the reverse direction when the voltage exceeds a predetermined value, the diode generates heat, the A contact is energized in conjunction with the change in the state of the bimetal, and the self-holding circuit is It is possible to determine that the voltage exceeds a predetermined value with a simple structure while maintaining the high temperature state and maintaining the energized state of the A contact.

  In order to achieve the above object, a voltage determination method for determining whether a voltage according to the present invention exceeds a predetermined value, a diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value, A bimetal preparation process for preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving generated heat, and an energized state from a non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state. A contact preparing step for preparing an A contact to become, a heating element preparing step for preparing a heating element that generates heat when voltage is applied and transmits heat to the bimetal, and the A contact and the heating element are connected in series. A second circuit preparation step of preparing a second circuit, a second circuit voltage application step of applying a voltage to the second circuit, and an electric voltage of applying a voltage to the diode in a reverse direction. And applying step, and it intended to comprise a.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the A contact is at the normal temperature of the bimetal. In conjunction with the state change from the state to the high temperature state, the non-energized state changes to the energized state. When the heating element is applied with voltage, the heating element generates heat and transfers heat to the bimetal, and the A contact and the heating element are connected in series. When a voltage is applied to the diode in the reverse direction, current flows in the reverse direction when the voltage exceeds a predetermined value, and the diode generates heat, resulting in a change in the state of the bimetal. In conjunction with this, the A contact is energized, the heating element generates heat, maintains the high temperature state of the bimetal and maintains the A contact energized state, and the voltage exceeds a predetermined value with a simple structure. It can be determined Rukoto.

  In order to achieve the above object, a voltage determination component for determining whether the voltage according to the present invention exceeds a predetermined value is received by a diode having a Zener voltage substantially equal to the predetermined value and heat generated from the diode. Bimetal capable of changing from a normal temperature state to a high temperature state, a B-contact that changes from the energized state to the non-energized state in conjunction with the change of the bimetal state from the normal temperature state to the high temperature state, and heat generated from the diode And a first circuit in which a conductive material that melts when a temperature exceeds a predetermined value is bridged to a pair of terminals, and a series connection circuit that serially connects the B contact and the first circuit, and a voltage. Can be applied to the diode in the reverse direction.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the B contact is the normal temperature of the bimetal. A pair of conductive materials that are melted when the first circuit receives heat generated from the diode and reaches a temperature higher than a predetermined value in conjunction with the state change from the state to the high temperature state. Since the B contact and the first circuit are connected in series, when a voltage is applied to the diode in the reverse direction, a current flows in the reverse direction when the voltage exceeds a predetermined value. The diode generates heat, the B contact is de-energized in conjunction with the change in the state of the bimetal, and when the change in the state of the bimetal does not occur, the first circuit is melted and the structure is simple. It can be determined that the pressure has exceeded a predetermined value.

  In order to achieve the above object, a voltage determination component for determining whether the voltage according to the present invention exceeds a predetermined value is received by a diode having a Zener voltage substantially equal to the predetermined value and heat generated from the diode. A bimetal capable of changing from a normal temperature state to a high temperature state, an A contact that changes from a non-energized state to an energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state, and the A contact is in an energized state Then, a self-holding circuit that holds the high temperature state of the bimetal is provided, and a voltage can be applied to the diode in the reverse direction.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the A contact is at the normal temperature of the bimetal. Since the self-holding circuit changes from the non-energized state to the energized state in conjunction with the state change from the state to the high temperature state, and the A contact is energized, the high temperature state of the bimetal is maintained. When applied in the direction, current flows in the reverse direction when the voltage exceeds a predetermined value, the diode generates heat, the A contact is energized in conjunction with the change in the state of the bimetal, and the self-holding circuit is It is possible to determine that the voltage exceeds a predetermined value with a simple structure while maintaining the high temperature state and maintaining the energized state of the A contact.

  In order to achieve the above object, a voltage determination component for determining whether the voltage according to the present invention exceeds a predetermined value is received by a diode having a Zener voltage substantially equal to the predetermined value and heat generated from the diode. When a voltage is applied, a bimetal that can change state from a normal temperature state to a high temperature state, an A contact that changes from a non-energized state to an energized state in conjunction with the bimetal changing state from a normal temperature state to a high temperature state, and A heating element that generates heat and transmits heat to the bimetal; and a second circuit in which the A contact and the heating element are connected in series, and a voltage can be applied to the second circuit. It was assumed that the diode could be applied in the reverse direction.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the A contact is at the normal temperature of the bimetal. In conjunction with the state change from the state to the high temperature state, the non-energized state changes to the energized state. When the heating element is applied with voltage, the heating element generates heat and transfers heat to the bimetal, and the A contact and the heating element are connected in series. Since the voltage is applied to the second circuit and the voltage is applied to the diode in the reverse direction, current flows in the reverse direction when the voltage exceeds a predetermined value, the diode generates heat, and the bimetal The A contact is energized in conjunction with the state change, the heating element generates heat, maintains the high temperature of the bimetal and maintains the A contact energized state, and the voltage exceeds a predetermined value with a simple structure. It is possible to determine.

In order to achieve the above object, a power cutoff method for cutting off power supply when the voltage of power supplied from a power source to a load exceeds a predetermined value according to the present invention is a diode whose zener voltage is substantially equal to a predetermined value. A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode, and the bimetal changing from a normal temperature state to a high temperature state. A B contact preparation step for preparing a B contact which is switched from an energized state to a non-energized state in conjunction with the above, and a pair of terminals that receive a heat generated from the diode and melt when a temperature exceeds a predetermined value. A first circuit preparation step for preparing a first circuit cross-linked to the power supply, a series connection step for connecting the B contact and the first circuit in series between a power source and a load, A voltage applying step of applying the reverse direction to the diode,
It was supposed to be equipped with.

According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the B contact is the normal temperature of the bimetal. A pair of conductive materials that are melted when the first circuit receives heat generated from the diode and reaches a temperature higher than a predetermined value in conjunction with the state change from the state to the high temperature state. Since the B contact and the first circuit are connected in series between a power source and a load, and a voltage is applied to the diode in the reverse direction,
When the voltage exceeds the specified value, current flows in the reverse direction, the diode generates heat, the B contact is de-energized in conjunction with the change in the state of the bimetal, and the state of the bimetal does not change In addition, the first circuit is melted and the power supply from the power source to the load can be cut off with a simple structure.

  In order to achieve the above object, a power cutoff method for cutting off power supply when the voltage of power supplied from a power source to a load exceeds a predetermined value according to the present invention is a diode whose zener voltage is substantially equal to a predetermined value. A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode, and the bimetal changing from a normal temperature state to a high temperature state. A B contact preparation step for preparing a B contact that is switched from an energized state to a non-energized state in conjunction with the A, and an A that is switched from a non-energized state to an energized state in conjunction with the state change of the bimetal from a normal temperature state to a high temperature state. A contact preparing step for preparing a contact and a self-holding circuit for preparing a self-holding circuit for holding the high temperature state of the bimetal when the A contact is energized. And a circuit preparation step, a series connection step for serially connecting the contact B between the power source and the load, a voltage applying step of applying a reverse voltage to the diode, as with a.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the B contact is the normal temperature of the bimetal. When the state changes from the state to the high temperature state, the energized state changes from the energized state to the non-energized state, and the contact A changes from the non-energized state to the energized state when the bimetal changes state from the normal temperature state to the high temperature state. The self-holding circuit maintains the high temperature state of the bimetal when the contact A is energized, connects the contact B in series between the power source and the load, and applies a voltage in the reverse direction to the diode. When the current exceeds the specified value, current flows in the reverse direction, the diode generates heat, the B contact is deenergized in conjunction with the change in the state of the bimetal, and the A contact is energized. Becomes state, holds the non-energized state of the B contact self-holding circuit to maintain the high temperature state of the bimetal can be cut off the power supply to the load from the power supply with a simple structure.

  In order to achieve the above object, a power cutoff method for cutting off power supply when the voltage of power supplied from a power source to a load exceeds a predetermined value according to the present invention is a diode whose zener voltage is substantially equal to a predetermined value. A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode, and the bimetal changing from a normal temperature state to a high temperature state. A B contact preparation step for preparing a B contact that is switched from an energized state to a non-energized state in conjunction with the A, and an A that is switched from a non-energized state to an energized state in conjunction with the state change of the bimetal from a normal temperature state to a high temperature state. A contact preparing step for preparing a contact, a heating element preparing step for preparing a heating element that generates heat when voltage is applied and transmits heat to the bimetal, and A A second circuit preparing step of preparing a second circuit in which a point and the heating element are connected in series; a series connecting step of connecting the B contact in series between a power source and a load; and applying a voltage to the second circuit A second circuit voltage applying step, and a voltage applying step of applying a voltage to the diode in the reverse direction.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the B contact is the normal temperature of the bimetal. When the state changes from the state to the high temperature state, the energized state changes from the energized state to the non-energized state, and the contact A changes from the non-energized state to the energized state when the bimetal changes state from the normal temperature state to the high temperature state. When the voltage is applied to the heating element, the heating element generates heat and transmits heat to the bimetal, the A contact and the heating element are connected in series, the B contact is connected in series between a power source and a load, and the voltage is Since it is applied to the second circuit and voltage is applied to the diode in the reverse direction, when the voltage exceeds the predetermined value, current flows in the reverse direction and the diode generates heat, changing the state of the bimetal. In conjunction with this, the B contact becomes non-energized, the A contact becomes energized, the heating element generates heat, maintains the high temperature state of the bimetal, and maintains the non-energized state of the B contact. The power supply to the load can be cut off.

Furthermore, in the power interruption method according to the embodiment of the present invention, the contact electrode of the A contact and the contact electrode of the B contact are provided on the bimetal, respectively, and the series connection step directly supplies power to the bimetal.
According to the configuration of the present invention, the contact electrode of the A contact and the contact electrode of the B contact are respectively provided on the bimetal, and when the bimetal is directly energized, the bimetal changes state between a normal temperature state and a high temperature state. Then, since the A contact or the B contact alternately turns on or off the current flowing through the bimetal, the power supply from the power source to the load can be cut off with a simple structure.

In order to achieve the above object, a power cutoff device that cuts off the supply of power when the voltage of power supplied from the power supply to the load exceeds a predetermined value according to the present invention is a diode whose zener voltage is substantially equal to the predetermined value. And a bimetal that can change the state from a normal temperature state to a high temperature state in response to heat generated from the diode, and the bimetal changes from a normal state to a high temperature state in conjunction with a change from a normal state to a high state. A B circuit, a first circuit in which a conductive material that melts when receiving a heat generated from the diode reaches a predetermined value or more, and a pair of terminals, and the B contact between a power source and a load; A series connection circuit for connecting the first circuit in series;
A voltage application circuit for applying a voltage to the diode in a reverse direction;
It was supposed to be equipped with.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the B contact is the normal temperature of the bimetal. A pair of conductive materials that are melted when the first circuit receives heat generated from the diode and reaches a temperature higher than a predetermined value in conjunction with the state change from the state to the high temperature state. The B contact and the first circuit are connected in series between the power source and the load, and the voltage application circuit applies the voltage to the diode in the reverse direction. When the value exceeds this value, current flows in the reverse direction, the diode generates heat, the B contact is deenergized in conjunction with the change in the state of the bimetal, and the state of the bimetal does not change. The first circuit is blown even when the can cut off the power supply to the load from the power supply with a simple structure.

  In order to achieve the above object, a power cutoff device that cuts off the supply of power when the voltage of power supplied from the power supply to the load exceeds a predetermined value according to the present invention is a diode whose zener voltage is substantially equal to the predetermined value. And a bimetal that can change the state from a normal temperature state to a high temperature state in response to heat generated from the diode, and the bimetal changes from a normal state to a high temperature state in conjunction with a change from a normal state to a high state. The B contact, the A contact that changes from the non-energized state to the energized state in conjunction with the state change of the bimetal from the normal temperature state to the high temperature state, and the high temperature state of the bimetal is maintained when the A contact becomes the energized state. A self-holding circuit; a series connection circuit for connecting the B contact in series between a power source and a load; and a voltage application circuit for applying a voltage to the diode in a reverse direction. It was a shall.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the B contact is the normal temperature of the bimetal. When the state changes from the state to the high temperature state, the energized state changes from the energized state to the non-energized state, and the contact A changes from the non-energized state to the energized state when the bimetal changes state from the normal temperature state to the high temperature state. The self-holding circuit maintains the high temperature state of the bimetal when the A contact is energized, the series connection circuit connects the B contact in series between the power source and the load, and the voltage application circuit supplies the voltage to the diode. Since it is applied in the reverse direction, when the voltage exceeds a predetermined value, a current flows in the reverse direction, the diode generates heat, and the B contact is non-linked in conjunction with the change in the state of the bimetal. It becomes an electric state, the A contact becomes energized, the self-holding circuit maintains the high temperature state of the bimetal and maintains the B contact non-energized state, and the power supply from the power source to the load can be cut off with a simple structure .

  In order to achieve the above object, a power cutoff device that cuts off the supply of power when the voltage of power supplied from the power supply to the load exceeds a predetermined value according to the present invention is a diode whose zener voltage is substantially equal to the predetermined value. And a bimetal that can change the state from a normal temperature state to a high temperature state in response to heat generated from the diode, and the bimetal changes from a normal state to a high temperature state in conjunction with a change from a normal state to a high state. The B contact, the A contact that changes from a non-energized state to an energized state in conjunction with a change in state of the bimetal from a normal temperature state to a high temperature state, and a heating element that generates heat when a voltage is applied and transfers heat to the bimetal. A second circuit connected in series with the A contact and the heating element, a series connection circuit connecting the B contact in series between a power source and a load, and applying a voltage to the second circuit. A secondary circuit voltage application circuit, and intended to comprise a voltage application circuit for applying a reverse voltage to the diode, the.

  According to the configuration of the present invention, the Zener voltage of the diode is substantially equal to a predetermined value, the bimetal can change the state from the normal temperature state to the high temperature state by receiving heat generated from the diode, and the B contact is the normal temperature of the bimetal. When the state changes from the state to the high temperature state, the energized state changes from the energized state to the non-energized state, and the contact A changes from the non-energized state to the energized state when the bimetal changes state from the normal temperature state to the high temperature state. When the voltage is applied to the heating element, the heating element generates heat and transfers heat to the bimetal, the second circuit connects the A contact and the heating element in series, and the series connection circuit connects the B contact between the power source and the load. Since the second circuit voltage application circuit applies the voltage to the second circuit and the voltage application circuit applies the voltage to the diode in the reverse direction, the reverse is applied when the voltage exceeds a predetermined value. Current flows in the direction, the diode generates heat, the B contact becomes non-energized in conjunction with the change in the state of the bimetal, the A contact becomes energized, the heating element generates heat, and the high temperature of the bimetal is maintained. Thus, the non-energized state of the B contact can be maintained, and the power supply from the power source to the load can be cut off with a simple structure.

Furthermore, in the power interruption device according to the embodiment of the present invention, the contact electrode of the A contact and the contact electrode of the B contact are provided on the bimetal, respectively, and the series connection step directly supplies the current to the bimetal.
According to the configuration of the present invention, the contact electrode of the A contact and the contact electrode of the B contact are respectively provided on the bimetal, and when the bimetal is directly energized, the bimetal changes state between a normal temperature state and a high temperature state. As a result, the current flowing through the bimetal at the A contact or the B contact is alternately energized or de-energized, so that the power supply from the power source to the load can be cut off with a simple structure.

As described above, the voltage determination method and the voltage determination component according to the present invention have the following effects due to their configurations.
A bimetal whose state is changed by receiving heat generated from a diode whose zener voltage is substantially equal to a predetermined value, and B which changes from an energized state to a non-energized state in conjunction with the state change of the bimetal from a normal temperature state to a high temperature state. Since the first circuit in which the contact material is provided and the conductive material which melts when receiving a heat generated from the diode reaches a temperature equal to or higher than a predetermined value is bridged in series with the pair of terminals is connected in series to the B contact, the voltage is predetermined. The current flows in the opposite direction when the value exceeds the value, the diode generates heat, the B contact becomes non-energized in conjunction with the change in the state of the bimetal, and the first change occurs when no change in the state of the bimetal occurs. It can be determined that the circuit is melted and the voltage exceeds a predetermined value with a simple structure.
In addition, a bimetal that changes its state upon receiving heat generated from a diode whose zener voltage is substantially equal to a predetermined value, and a state where the bimetal changes from a normal temperature state to a high temperature state, and changes from a non-energized state to a conductive state. When the A contact is provided and the A contact is energized, the high temperature state of the bimetal is maintained. Therefore, when the voltage exceeds a predetermined value, a current flows in the reverse direction, the diode generates heat, The A contact is energized in conjunction with the state change, and the self-holding circuit maintains the high temperature state of the bimetal to maintain the A contact energized state, and the voltage exceeds a predetermined value with a simple structure. Can be judged.
In addition, a bimetal that changes its state upon receiving heat generated from a diode whose zener voltage is substantially equal to a predetermined value, and a state where the bimetal changes from a normal temperature state to a high temperature state, and changes from a non-energized state to a conductive state. A voltage is applied to a circuit in which an A contact is provided and a heating element that generates heat when the voltage is applied to the A contact and transmits heat to the bimetal is connected in series, so that the reverse occurs when the voltage exceeds a predetermined value. A current flows in the direction, the diode generates heat, the A contact is energized in conjunction with the change in the state of the bimetal, the heating element generates heat, maintains the high temperature state of the bimetal, and maintains the energized state of the A contact. It can be determined that the voltage exceeds a predetermined value with a simple structure.

As described above, the power cut-off method and the power cut-off device according to the present invention have the following effects due to their configurations.
A bimetal whose state is changed by receiving heat generated from a diode whose zener voltage is substantially equal to a predetermined value, and B which changes from an energized state to a non-energized state in conjunction with the state change of the bimetal from a normal temperature state to a high temperature state. A contact is provided, and a first circuit obtained by bridging a conductive material that melts when receiving a heat generated from the diode to a temperature equal to or higher than a predetermined value and a pair of terminals and the B contact are connected in series between a power source and a load. When connected, the current flows in the reverse direction when the voltage exceeds the specified value, the diode generates heat, the B contact is de-energized in conjunction with the change in the state of the bimetal, and the change in the state of the bimetal Even when it does not occur, the first circuit is melted, and the power supply from the power source to the load can be cut off with a simple structure.
In addition, a bimetal that changes its state upon receiving heat generated from a diode whose zener voltage is substantially equal to a predetermined value, and changes from an energized state to a non-energized state in conjunction with the bimetal changing its state from a normal temperature state to a high temperature state. A B contact that is turned on and an A contact that is turned on from a non-energized state is provided, and when the A contact is turned on, the high temperature state of the bimetal is maintained, and the B contact is connected in series between a power source and a load. Therefore, when the voltage exceeds a predetermined value, a current flows in the reverse direction, the diode generates heat, the B contact becomes non-energized in conjunction with the change in the state of the bimetal, and the A contact becomes energized. The self-holding circuit maintains the high temperature state of the bimetal and maintains the non-energized state of the B contact, and the power supply from the power source to the load can be cut off with a simple structure.
In addition, a bimetal that changes its state upon receiving heat generated from a diode whose zener voltage is substantially equal to a predetermined value, and changes from an energized state to a non-energized state in conjunction with the state change of the bimetal from a normal temperature state to a high temperature state. A voltage is applied to the second circuit in which the B contact and the A contact that is energized from the non-energized state are provided, and the A contact and the heating element that generates heat when the voltage is applied and that conducts heat to the bimetal are connected in series. Since the B contact is connected in series between the power source and the load, when the voltage exceeds a predetermined value, a current flows in the reverse direction, the diode generates heat, and the B is linked to the change in the state of the bimetal. The contact becomes non-energized, the A contact becomes energized, the heating element generates heat, maintains the high temperature state of the bimetal and maintains the non-energized state of the B contact, and from a power source to a load with a simple structure Power supply It can be cut off.
Further, since the contact electrode of the A contact and the contact electrode of the B contact are respectively provided on both surfaces of the bimetal and the bimetal is directly energized, when the bimetal changes state between a normal temperature state and a high temperature state, Since the A contact and the B contact alternately set the current flowing through the bimetal between an energized state and a non-energized state, power supply from the power source to the load can be cut off with a simple structure.
Accordingly, it is possible to provide a voltage determination method, a voltage determination component, a power cut-off method, and a power cut-off device that are simple in configuration and reliable in operation.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

First, the voltage determination method according to the first embodiment of the present invention will be described.
The voltage determination method is a method for determining that the voltage is a predetermined value, and includes a diode preparation step, a bimetal preparation step, a B contact preparation step, a first circuit preparation step, a voltage application step, and a voltage determination step. Is done.
Here, the voltage is the difference between the reference potential and the potential at the + terminal. Usually, the reference potential is the potential of the negative terminal.
In the diode preparation step, a diode 10 having a Zener voltage substantially equal to a predetermined value is prepared. The diode is preferably a Zener diode.
In the bimetal preparation step, bimetal is prepared. Bimetal is an element that can change the state from a normal temperature state to a high temperature state by receiving heat generated from the diode.
The bimetal has a structure in which two metals having different temperature expansion coefficients are bonded to each other, and changes the state according to a change in temperature.
When the bimetal temperature changes from low to high, the state of the bimetal changes from a normal temperature state to a high temperature state.
When the bimetal temperature changes from higher to lower, the bimetal state changes from a high temperature state to a normal temperature state.
The bimetal is preferably a bimetal disk. The bimetal disc 20 includes a flat surface portion 21 and a spherical surface portion 22. When the state of the bimetal disk changes, the sign of the curvature of the spherical portion 22 is reversed.
FIG. 10 shows the relationship between the transition of the state of the bimetal disk and the set temperature.
When the temperature of the bimetal disk changes from low to high and reaches a high temperature Th of a predetermined set temperature, the state of the bimetal disk changes from a normal temperature state to a high temperature state in a snap shape. When the temperature of the bimetal disk changes from higher to lower and becomes a low temperature Tl of a predetermined set temperature, the state of the bimetal disk changes from a high temperature state to a normal temperature state in a snap shape. Since the high temperature Th at the predetermined set temperature is higher than the low temperature Tl at the predetermined set temperature, the change in the state of the bimetal disk has a so-called hysteresis.

In the B contact preparation step, a B contact is prepared. The B contact is a contact that changes from the energized state to the non-energized state in conjunction with the change of the state of the bimetal from the normal temperature state to the high temperature state.
When the B contact is composed of a pair of B contact electrodes, it is preferable that one of the B contact electrodes is provided on the bimetal and the current flows directly to the bimetal. One B-contact electrode is in contact with the other B-contact electrode when the bimetal is in the normal temperature state, and the B-contact is energized. When the bimetal is in the high-temperature state, one B-contact electrode is the other The B contact is separated from the B contact electrode and is in a non-energized state.

In the first circuit preparation step, the first circuit is prepared. The first circuit is a circuit obtained by bridging a pair of terminals with a conductive material that melts when it receives heat generated from a diode and reaches a temperature equal to or higher than a predetermined value.
When the conductive material is melted, the pair of terminals are no longer bridged, and the first circuit is in a non-energized state.

  In the voltage application step, a voltage is applied to the diode in the reverse direction.

In the voltage determination step, when at least one of the B contact or the first circuit changes from the energized state to the non-energized state, it is determined that the voltage V exceeds a predetermined value.
For example, when the B contact and the first circuit are connected in series, power does not flow when at least one of the B contact and the first circuit is in a non-energized state.

The operation of the voltage determination method according to the first embodiment of the present invention will be described.
FIG. 9 is a graph showing the current-voltage characteristics of a Zener diode.
A voltage V is applied to the diode 10 in the reverse direction. When the voltage V is sufficiently smaller than the zener voltage Vt, the current I is zero.
When the voltage V rises and becomes substantially equal to the Zener voltage Vt, the current I increases rapidly. When current flows, the diode 10 generates heat.
The heat of the diode 10 is transferred to the bimetal 20 and the first circuit 40.
When the bimetal 20 receives heat, the temperature of the bimetal changes from low to high, and the state of the bimetal 20 changes from a normal temperature state to a high temperature state.
When the state of the bimetal 20 changes from the normal temperature state to the high temperature state, the B contact changes from the energized state to the non-energized state.
When the B contact is not de-energized, the diode 10 continues to generate heat and the first circuit is melted.
When either the B contact or the first circuit is in a non-energized state, it can be determined that the voltage exceeds a predetermined value.
For example, if the B contact and the first circuit are connected in series, electricity will not flow to the B contact and the first circuit when at least one of the B contact and the first circuit is not energized. When the B contact and the first circuit connected in series are used directly or the output of the contact is used as a signal, various functions can be exhibited when the voltage exceeds a predetermined value.

Next, a voltage determination method according to the second embodiment of the present invention will be described.
The voltage determination method is a method for determining that the voltage exceeds a predetermined value, and is a diode preparation step, a bimetal preparation step, a B contact preparation step, an A contact preparation step, a self-holding circuit preparation step, and a voltage application step. And a voltage determination step.
Since the diode preparation step, the bimetal preparation step, the B contact preparation step, and the voltage application step are the same as those in the voltage determination step according to the first embodiment, description thereof is omitted.
The A contact preparation step is a step of preparing an A contact. The A contact is an element that changes from the non-energized state to the energized state in conjunction with the change of the state of the bimetal from the normal temperature state to the high temperature state.
The self-holding circuit preparation step is a step of preparing a self-holding circuit. The self-holding circuit is an electronic circuit that holds the high temperature state of the bimetal when the contact A is energized.
The voltage determination step is a step of determining that the voltage exceeds a predetermined value when the state of the B contact changes from the energized state to the non-energized state.

The operation of the voltage determination method according to the second embodiment of the present invention will be described below.
A voltage V is applied to the diode 10 in the reverse direction. When the voltage V is sufficiently smaller than the zener voltage Vt, the current I is zero. The state of the bimetal 20 is a normal temperature state.
When the voltage V rises and becomes substantially equal to the Zener voltage Vt, the current I increases rapidly. When current flows, the diode 10 generates heat.
When the bimetal 20 receives heat, the state of the bimetal 20 changes from a normal temperature state to a high temperature state.
When the state of the bimetal 20 changes from the normal temperature state to the high temperature state, the B contact changes from the energized state to the non-energized state, and the A contact changes from the non-energized state to the energized state.
When the A contact is energized, the self-holding circuit maintains the state of the bimetal 20 at a high temperature, and the non-energized state of the B contact is maintained.
Since the B contact is changed from the energized state to the non-energized state, it can be determined that the voltage exceeds a predetermined voltage.
Further, since the A contact is changed from the non-energized state to the energized state, it can be determined that the voltage exceeds a predetermined voltage.
When this A contact or B contact is used directly, or the output of the A contact or B contact is used as a signal, various functions can be exhibited when the voltage exceeds a predetermined value.

Next, a voltage determination method according to the third embodiment of the present invention will be described.
The voltage determination method is a method for determining that the voltage exceeds a predetermined value, and is a diode preparation step, a bimetal preparation step, a B contact preparation step, an A contact preparation step, a heating element preparation step, and a second circuit preparation. It comprises a process, a second circuit voltage application process, a voltage application process, and a voltage determination process.
Since the diode preparation step, the bimetal preparation step, the B contact preparation step, the A contact preparation step, and the voltage application step are the same as those in the voltage determination method according to the second embodiment, description thereof is omitted.
The heating element preparation step is a step of preparing a heating element. The heating element is an element that generates heat when a voltage is applied and transfers heat to the bimetal.
The heating element 60 is preferably a constant temperature heater. In particular, the constant temperature heater is preferably a PTC thermistor. The PTC thermistor is preferably a polymer type. In this way, the heating element 60 is easily deformed, so that the heating element 60, the insulator 61, and the bimetal 20 are in good contact with each other, and the heat transfer resistance is reduced.
The second circuit preparation step is a step of preparing the second circuit. The second circuit is a circuit in which the A contact and the heating element are connected in series.
The second circuit voltage application step is a step of applying a voltage to the second circuit. For example, the second circuit is connected in parallel to the power source.
The voltage determination step determines that the voltage exceeds a predetermined voltage when the state of the B contact changes from the energized state to the non-energized state or when the state of the A contact changes from the non-energized state to the energized state. It is a process to do.

The operation of the voltage determination method according to the third embodiment of the present invention will be described below.
A voltage V is applied to the diode 10 in the reverse direction. When the voltage V is sufficiently smaller than the zener voltage Vt, the current I is zero. The state of the bimetal 20 is a normal temperature state.
When the voltage V rises and becomes substantially equal to the Zener voltage Vt, the current I increases rapidly. When current flows, the diode 10 generates heat.
When the bimetal 20 receives heat, the state of the bimetal 20 changes from a normal temperature state to a high temperature state.
When the state of the bimetal 20 changes from the normal temperature state to the high temperature state, the B contact changes from the energized state to the non-energized state, and the A contact changes from the non-energized state to the energized state.
When the A contact is energized, a voltage is applied to the heating element to generate heat, and heat is transmitted to the bimetal, the state of the bimetal 20 is maintained at a high temperature, and the non-energized state of the B contact is maintained.
Since the B contact is changed from the energized state to the non-energized state, it can be determined that the voltage exceeds a predetermined voltage.
Further, since the A contact is changed from the non-energized state to the energized state, it can be determined that the voltage exceeds a predetermined voltage.
When this A contact or B contact is used directly, or the output of the A contact or B contact is used as a signal, various functions can be exhibited when the voltage exceeds a predetermined value.

Next, the configuration of the power interruption method according to the first embodiment of the present invention will be described.
The power cutoff method is a method of cutting off power supply when the voltage of power supplied from the power source to the load exceeds a predetermined value, and includes a diode preparation step, a bimetal preparation step, a B contact preparation step, and a first circuit. It consists of a preparation process, a series connection process, and a voltage printing process.
Since the diode preparation step, the bimetal preparation step, the B contact preparation step, and the first circuit preparation step are the same as those of the voltage determination method according to the first embodiment, description thereof is omitted.
The series connection step is a step of connecting the B contact and the first circuit in series between the power source and the load. When the B contact and the first circuit are energized, power is supplied from the power source to the load, and when the B contact or the first circuit is de-energized, power supply from the power source to the load is interrupted.
The voltage application step is a step of applying a voltage to the diode in the reverse direction. For example, a diode is connected in parallel to the load.
It is preferable that the load is a rechargeable battery and the predetermined value is set to a voltage value when the rechargeable battery is fully charged. If it does in this way, when charging a rechargeable battery, if a rechargeable battery will be in a full charge state, supply of electric power can be interrupted | blocked.

Below, the effect | action of the electric power interruption method which concerns on 1st embodiment of this invention is demonstrated.
A power source supplies power to the load through the B contact and the first circuit.
A voltage V is applied to the diode 10 in the reverse direction. When the voltage V is sufficiently smaller than the zener voltage Vt, the current I is zero.
When the voltage V rises and becomes substantially equal to the Zener voltage Vt, the current I increases rapidly. When current flows, the diode 10 generates heat.
The heat of the diode 10 is transferred to the bimetal 20 and the first circuit 40.
When the bimetal 20 receives heat, the state of the bimetal 20 changes from a normal temperature state to a high temperature state.
When the state of the bimetal 20 is changed from the normal temperature state to the high temperature state, the B contact is changed from the energized state to the non-energized state, thereby interrupting the supply of power.
If the B contact does not go into a non-energized state even when the bimetal generates heat, the diode 10 continues to generate heat and the first circuit is melted to cut off the supply of power.
When the diode is connected in parallel to the load, the current is not supplied to the diode, and the heat generation of the diode is automatically eliminated.

Next, the structure of the power interruption method according to the second embodiment of the present invention will be described.
The power cut-off method is a method of cutting off power supply when the voltage of power supplied from the power source to the load exceeds a predetermined value. The diode preparation step, the bimetal preparation step, the B contact preparation step, and the A contact preparation It comprises a process, a self-holding circuit preparation process, a series connection process, and a voltage printing process.
The diode preparation step, the bimetal preparation step, the B contact preparation step, the A contact preparation step, the self-holding circuit preparation step, and the voltage printing pressure step are the same as those of the voltage determination method according to the second embodiment, and thus description thereof is omitted. To do.
A series connection process is a process of connecting B contact in series between a power supply and a load. When the B contact is energized, power is supplied from the power source to the load, and when the B contact is not energized, power supply from the power source to the load is interrupted.
The voltage application step is a step of applying a voltage to the diode in the reverse direction. For example, a diode is connected in parallel to the load.
It is preferable that the load is a rechargeable battery and the predetermined value is set to a voltage value when the rechargeable battery is fully charged. If it does in this way, when charging a rechargeable battery, if a rechargeable battery will be in a full charge state, supply of electric power can be interrupted | blocked.

Below, the effect | action of the electric power interruption method which concerns on 2nd embodiment of this invention is demonstrated.
Power is supplied from the power source to the load via the B contact.
A voltage V is applied to the diode 10 in the reverse direction. When the voltage V is sufficiently smaller than the zener voltage Vt, the current I is zero. The state of the bimetal 20 is a normal temperature state.
When the voltage V rises and becomes substantially equal to the Zener voltage Vt, the current I increases rapidly. When current flows, the diode 10 generates heat.
When the bimetal 20 receives heat, the state of the bimetal 20 changes from a normal temperature state to a high temperature state.
When the state of the bimetal 20 changes from the normal temperature state to the high temperature state, the B contact changes from the energized state to the non-energized state, and the A contact changes from the non-energized state to the energized state.
When the A contact is energized, the self-holding circuit holds the state of the bimetal 20 at a high temperature, so that the non-energized state of the B contact is maintained.
The B contact changes from the energized state to the non-energized state, and the power supply from the power source to the load is cut off.
When the diode is connected in parallel to the load, the current is not supplied to the diode, and the heat generation of the diode is automatically eliminated.

Next, the structure of the power interruption method according to the third embodiment of the present invention will be described.
The power cut-off method is a method of cutting off power supply when the voltage of power supplied from the power source to the load exceeds a predetermined value. The diode preparation step, the bimetal preparation step, the B contact preparation step, and the A contact preparation It comprises a process, a heating element preparation process, a second circuit preparation process, a series connection process, a second circuit application process, and a voltage printing pressure process.
The diode preparation process, the bimetal preparation process, the B contact preparation process, the A contact preparation process, the heating element preparation process, the second circuit preparation process, and the voltage printing pressure process are the same as those of the voltage determination method according to the third embodiment. Therefore, explanation is omitted.
A series connection process is a process of connecting B contact in series between a power supply and a load. When the B contact is energized, power is supplied from the power source to the load, and when the B contact is not energized, power supply from the power source to the load is interrupted.
The second circuit voltage application step is a step of applying a voltage to the second circuit. For example, the second circuit is connected in parallel to the power source.
The voltage application step is a step of applying a voltage to the diode in the reverse direction. For example, a diode is connected in parallel to the load.
It is preferable that the load is a rechargeable battery and the predetermined value is set to a voltage value when the rechargeable battery is fully charged. If it does in this way, when charging a rechargeable battery, if a rechargeable battery will be in a full charge state, supply of electric power can be interrupted | blocked.

The operation of the power interruption method according to the third embodiment of the present invention will be described below.
Power is additionally supplied from the power source through the B contact.
A voltage V is applied to the diode 10 in the reverse direction. When the voltage V is sufficiently smaller than the zener voltage Vt, the current I is zero. The state of the bimetal 20 is a normal temperature state.
When the voltage V rises and becomes substantially equal to the Zener voltage Vt, the current I increases rapidly. When current flows, the diode 10 generates heat.
When the bimetal 20 receives heat, the state of the bimetal 20 changes from a normal temperature state to a high temperature state.
When the state of the bimetal 20 changes from the normal temperature state to the high temperature state, the B contact changes from the energized state to the non-energized state, and the A contact changes from the non-energized state to the energized state.
When the contact A is energized, a voltage is applied to the heating element. When voltage is applied, the heating element generates heat and conducts heat to the bimetal.
The state of the bimetal 20 is maintained at a high temperature, and the non-energized state of the B contact is maintained.
The B contact changes from the energized state to the non-energized state, and the power supply from the power source to the load is cut off.
When the diode is connected in parallel to the load, the current is not supplied to the diode, and the heat generation of the diode is automatically eliminated.

The power interruption device and voltage determination component according to the first embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a side cross-sectional view of a voltage determination component according to the first embodiment of the present invention. FIG. 2 is a front sectional view of the voltage determination component according to the first embodiment of the present invention. FIG. 3 is a circuit diagram 1 of the power cutoff device according to the first embodiment of the present invention. FIG. 4 is a second circuit diagram of the power cutoff device according to the first embodiment of the present invention.
The voltage determination component is a component that cuts off the supply of power from the power source to the load when the voltage of the power source reaches a predetermined value. The diode 10, the bimetal 20, the B contact 30, the first circuit 40, the case 70, and the like. Consists of.
The Zener voltage of the diode 10 is approximately equal to a predetermined value. The diode is preferably a Zener diode.
The bimetal 20 can change its state from a normal temperature state to a high temperature state by receiving heat generated from the diode 10.
The bimetal has a structure in which two metals having different temperature expansion coefficients are bonded to each other, and changes the state according to a change in temperature.
When the bimetal temperature changes from low to high, the state of the bimetal changes from a normal temperature state to a high temperature state.
When the bimetal temperature changes from higher to lower, the bimetal state changes from a high temperature state to a normal temperature state.
The bimetal is preferably a bimetal disk. The bimetal disc 20 includes a flat surface portion 21 and a spherical surface portion 22. When the state of the bimetal disk changes, the sign of the curvature of the spherical portion 22 is reversed.
FIG. 10 shows the relationship between the transition of the state of the bimetal disk and the set temperature.
When the temperature of the bimetal disk changes from low to high and reaches a high temperature Th of a predetermined set temperature, it changes from a normal temperature state to a high temperature state in a snap shape. When the temperature of the bimetal disk changes from higher to lower and becomes a low temperature Tl of a predetermined set temperature, it changes from a high temperature state to a normal temperature state in a snap shape. Since the high temperature Th at the predetermined set temperature is higher than the low temperature Tl at the predetermined set temperature, the change in the state of the bimetal disk has a so-called hysteresis.

The B contact 30 changes from the energized state to the non-energized state in conjunction with the state change of the bimetal 20 from the normal temperature state to the high temperature state. The B contact 30 includes a pair of B contact electrodes 31 and 32.
Preferably, the bimetal 20 and the B contact electrode plate 33 are arranged facing each other with a space between them, and one B contact electrode 31 is provided on the bimetal 20 and the other B contact electrode is provided on the B contact electrode plate 33. .
The posture of the bimetal 20 becomes one of a normal temperature state and a high temperature state in a space surrounded by the case 70.
The B contact electrode plate 33 is molded in the case 70.

The first circuit 40 is a circuit obtained by bridging a pair of terminals with a conductive material that melts when it receives a heat generated from a diode and reaches a temperature equal to or higher than a predetermined value. The conductive material is preferably a low melting point conductive metal. For example, the conductive metal is a metal used for use.
The first circuit 40 includes a pair of terminals that are spaced apart from each other and a low melting point conductive material that bridges the pair of terminals.
The 1st circuit 40 is provided in the location close | similar to the diode 10 of the B contact electrode plate 33 molded by a case main body.
Since the conductive material is close to the diode, when the diode 10 continues to generate heat, the conductive material is melted and the first circuit 40 is deenergized, and the other B contact electrode 32 and the second terminal T2 are connected. De-energized and power supply is cut off.

A voltage can be applied to the diode 10 in the reverse direction, and the B contact 30 can be connected in series between the power source and the load.
The case 70 is a container that houses the diode 10, the bimetal 20, the B contact 30, and the first circuit 40, and is generally made of resin.
The case 70 includes a case lid 71 and a case main body 72.
A B contact electrode plate 33 is molded inside the case main body 72.
The first terminal T1, the second terminal T2, and the third terminal T3 protrude from the case 70.
The B contact 30 and the first circuit are connected in series between the first terminal T1 and the second terminal T2.
The case 70 is preferably provided with a space 73 that encloses the first circuit 40. In particular, the space 73 is preferably open to the outside of the case 70. If it does in this way, the heat of the 1st circuit 40 can be thermally radiated outside easily.
A stopper 74 is provided on the case body 72 between the approximate center of the spherical surface of the bimetal disk 20 and the B contact electrode plate 31. In this way, when the bimetal disk 20 is in a high temperature state, there is no possibility that the B contact will be energized even if the voltage determination component is shaken by vibration.

When the state of the bimetal disc 20 is changed between a normal temperature state and a high temperature state, one end of the bimetal disc 20 is sandwiched between the case body 72 and the case lid 71, the other end of the bimetal disc swings up and down.
FIG. 1S shows a case where the state of the bimetal disk 20 is a normal temperature state.
FIG. 1 (T) shows a case where the state of the bimetal disk 20 is a high temperature state.
One B contact electrode 31 is provided at the other end of the bimetal desk 20. The other B contact electrode 32 is provided at a position facing one B contact electrode 31 of the B contact electrode plate 33 molded in the case body 72.
When the bimetal disk 20 is in a normal temperature state, one B contact electrode 31 contacts the other B contact electrode 32, and the B contact 30 is energized.
When the bimetal disk 20 is in a high temperature state, one B contact electrode 31 is separated from the other B contact electrode 32 and the B contact 30 is in a non-energized state.
The case lid 71 and the case body 72 are sandwiched between the diode 10 and the bimetal disk 20. When the diode 10 generates heat, the heat is easily transferred to the bimetal disk 20 and the first circuit 40.
The first terminal T1 is electrically connected to one end of the bimetal disk 20.
The second terminal T2 is electrically connected to the B contact electrode plate 33 located on the opposite side of the other B contact electrode 32 with the first circuit 40 interposed therebetween.
The third terminal T3 is electrically connected to one terminal of the diode 10. The other terminal of the diode 10 conducts to a position between the first circuit 40 of the B contact electrode plate 33 and the other B contact electrode 32.
When the positive terminal of the power supply is made conductive to the first terminal T1 and the third terminal T3 is made conductive to the negative terminal, a reverse voltage is applied to the diode 10.

The power interrupting device and its operation according to the first embodiment of the present invention will be described.
FIG. 3 schematically shows a first type of circuit of the power interruption device according to the first embodiment of the present invention.
The load 90 includes a rechargeable battery 91 and a load circuit 92. Bimetal is a bimetal disc.
The Zener voltage of the diode 10 is substantially equal to the potential on the + side when the rechargeable battery 91 is fully charged.
The positive terminal of the power supply 80 and the positive terminal of the load circuit 92 are electrically connected to the first terminal T1 of the voltage determination component.
The + terminal of the rechargeable battery 91 is conducted to the second terminal T2 of the voltage determination component.
The third terminal T3 of the voltage determination component is electrically connected to the negative terminal of the power source 80, the negative terminal of the rechargeable battery 91, and the negative terminal of the load circuit 92.

The voltage of the power supply 80 is applied in the reverse direction to the diode 10 through the bimetal 20 and the B contact 30, and the B contact 30 and the first circuit 40 are connected between the power supply 80 and the rechargeable battery 91 (corresponding to a load). Are connected in series.
The potential of the second terminal T2 becomes a value determined by the relative relationship between the output impedance of the power source 80 and the input impedance of the rechargeable battery 91.
Usually, when the rechargeable battery 91 is uncharged, the potential of the second terminal T2 is low, and when the rechargeable battery 91 approaches full charge, the potential of the second terminal T2 increases.

Since the bimetal disk 20 is in a normal temperature state and the B contact 30 is in an energized state, the first terminal T1 and the second terminal T2 are electrically connected.
When the power switch 81 of the power supply 80 is turned on, the current passes through the first terminal T1, passes through the bimetal disc 20, the B contact 30, the first circuit 40, passes through the second terminal T2, and then enters the rechargeable battery 91. Flowing.
When the rechargeable battery 91 is not fully charged, the voltage applied in the reverse direction to the diode 10 is lower than the Zener voltage, so that no current flows through the diode 10 and the diode 10 does not generate heat.
When charging is continued, the rechargeable battery 91 approaches a fully charged state.
When the rechargeable battery 91 is fully charged, the potential of the second terminal T2 becomes substantially equal to the value of the Zener voltage.
Since the voltage applied to the diode 10 in the reverse direction is approximately equal to the Zener voltage, a current flows in the diode 10 in the reverse direction, and the diode 10 generates heat.
The heat of the diode 10 is transmitted to the bimetal 20, and the state of the bimetal 20 changes from the normal temperature state to the high temperature state.
When the bimetal disk 20 is in a high temperature state, one B contact electrode 31 and the other B contact electrode 32 are separated from each other, and the B contact 30 is in a non-energized state.
Therefore, the first terminal T1 and the second terminal T2 are in a non-energized state, and power supply from the power source 80 to the rechargeable battery 91 is interrupted.
When the power switch 81 is turned off, charging of the rechargeable battery 91 is completed, and the rechargeable battery 91 supplies power to the load circuit 92.
Since the voltage applied to the diode 10 becomes lower than the Zener voltage, the diode 10 does not generate heat, the state of the bimetal 20 returns to the normal temperature state, and the B contact 30 returns to the energized state.

  If the state of the bimetal 20 does not change from the normal temperature state to the high temperature state even if the diode 10 generates heat, the B contact continues to be energized. When the diode continues to generate heat, the first circuit is melted, the first terminal T1 and the second terminal T2 are de-energized, and the supply of power from the power source to the load is interrupted.

The rechargeable battery 91 supplies power to the load circuit 92 through the bimetal 20 and the B contact 30.
When an excessive current flows to the voltage determination component due to a phenomenon such as abnormality in the load circuit 92, the excessive current flows to the bimetal 20 and the bimetal 20 generates heat.
When excessive current continues to flow, the bimetal 20 changes from the normal temperature state to the high temperature state, and the B contact 30 is brought into a non-energized state.
Therefore, when a phenomenon occurs in which excessive current flows from the rechargeable battery 91 to the load circuit 92, the voltage determination component can cut off the supply of power.

FIG. 4 schematically shows a second type circuit of the power cutoff device according to the first embodiment of the present invention.
The second type of circuit is the same except that the load circuit 92 is directly connected in parallel to the rechargeable battery without any voltage determination component.
When the rechargeable battery 91 is charged by the power source 80, it flows to the rechargeable battery through the B contact, so that the operation of the voltage determination component is the same as that described in the first type circuit.
When charging is finished and the power switch 81 is turned off, the current of the rechargeable battery flows directly to the load circuit 92.
Since the voltage when the rechargeable battery 91 supplies power to the load circuit 92 is lower than the Zener voltage of the diode 10, no current flows through the diode 10. Since the diode 10 does not generate heat and the state of the bimetal disk 20 returns to the normal temperature state, the B contact 30 returns to the energized state.

Next, the power interruption device and voltage determination component according to the second embodiment of the present invention will be described with reference to the drawings.
FIG. 5 is a side sectional view of the voltage determination component according to the second embodiment of the present invention. FIG. 6 is a front sectional view of a voltage determination component according to the second embodiment of the present invention. FIG. 7 is a circuit diagram 1 of a power interrupting device according to the second embodiment of the present invention. FIG. 8 is a second circuit diagram of the power cut-off device according to the second embodiment of the present invention.
The voltage determination component is a component that cuts off the supply of power from the power source to the load when the voltage of the power source reaches a predetermined value. The diode 10, the bimetal 20, the B contact 30, the first circuit 40, and the A contact 50 And a heating element 60, a second circuit (corresponding to a self-holding circuit), and a case 70.
Since the diode 10, the bimetal 20, the B contact 30, and the first circuit 40 are the same as those of the voltage determination component of the first embodiment, description thereof is omitted.

The first terminal T1, the B contact 30, the first circuit 40, and the second terminal T2 are connected in series.
When the positive terminal of the power source is electrically connected to the first terminal T1 and the positive terminal of the load 90 is electrically connected to the second terminal T2, power can be supplied to the load 90 from the power source through the B contact 30 and the first circuit 40.

The A contact 50 is a contact that changes from the non-energized state to the energized state in conjunction with the change of the state of the bimetal from the normal temperature state to the high temperature state.
The A contact 50 includes a pair of A contact electrodes 51 and 52.
One B contact electrode is preferably provided on one surface of the bimetal disk, and one A contact electrode is preferably provided on the other surface of the bimetal disk.
The other A contact electrode 52 is provided on an A contact electrode plate 53 molded inside the case lid 71.
In this manner, when the state of the bimetal disk is normal temperature, one B contact electrode 31 is in contact with the other B contact electrode 32, the B contact is energized, and one A contact electrode 51 is in the other state. The A contact is separated from the A contact electrode 52 and the A contact is not energized. Further, when the state of the bimetal disk is a high temperature state, one B contact electrode 31 is separated from the other B contact electrode 32 and the B contact is not energized, and one A contact electrode 51 is the other A contact. The A contact is in an energized state in contact with the electrode.

The heating element 60 is an electronic element that generates heat when a voltage is applied and transfers heat to the bimetal 20. The heating element 60 overlaps one end of the bimetal disk 20 with the insulator 61 interposed therebetween.
The fourth terminal T4 is electrically connected to one terminal of the heating element 60.
The protruding terminal 62 is electrically connected to the other terminal of the heating element 60. In a state where the case lid 71 is united with the case main body 72, the protruding terminal 62 contacts the A contact electrode plate 53, and the other terminal of the heating element 60 is electrically connected to the other A contact electrode 52.
An insulator 61 is sandwiched between the heating element 60 and the bimetal 20.
The heating element 60 is preferably a constant temperature heater. In particular, the constant temperature heater is preferably a PTC thermistor. The PTC thermistor is preferably a polymer type. In this way, the heating element 60 is easily deformed, so that the heating element 60, the insulator 61, and the bimetal 20 are in good contact with each other, and the heat transfer resistance is reduced.

The second circuit is a circuit in which the A contact 50 and the heating element 60 are connected in series.
The second circuit can be energized.
In this way, when the state of the bimetal 20 changes from the normal temperature state to the high temperature state and the B contact 30 becomes non-energized, the A contact becomes energized and the heating element is energized, and the heating element generates heat. Since the heat is transmitted to the bimetal 20, the high temperature state of the bimetal 20 can be maintained, and the non-energized state of the B contact 30 can be maintained.
The case lid 71 and the case body 72 sandwich the heating element 60, the insulator 61, one end of the bimetal 20, the diode 10, and the first circuit 40 in an overlapping manner.
The case 70 is preferably provided with a space 73 that encloses the first circuit 40. In particular, the space 73 is preferably open to the outside of the case 70. If it does in this way, the heat of the 1st circuit 40 can be thermally radiated outside easily.

The power interrupting device and its operation according to the second embodiment of the present invention will be described.
FIG. 7 schematically shows a first type circuit of the power cutoff device according to the second embodiment.
The Zener voltage of the diode 10 is substantially equal to the potential on the + side when the rechargeable battery 91 is fully charged. Bimetal is a bimetal disc.
The B contact 30 is connected in series between the power source 80 and the load 90 so as to apply a voltage to the diode 10 in the reverse direction using a voltage determination component.
The load 90 includes a rechargeable battery 91 and a load circuit 92.
The positive side of the power supply 80 and the positive terminal of the load circuit 92 are electrically connected to the first terminal T1 of the voltage determination component.
The + terminal of the rechargeable battery 91 is conducted to the second terminal T2 of the voltage determination component.
The negative terminal of the power source 80, the negative terminal of the rechargeable battery 91, and the negative terminal of the load circuit 92 are electrically connected to the third terminal T3 and the fourth terminal T4 of the voltage determination component.
The potential of the second terminal T2 becomes a value determined by the relative relationship between the output impedance of the power source 80 and the input impedance of the rechargeable battery 91.
Usually, when the rechargeable battery 91 is uncharged, the potential of the second terminal T2 is low, and when the rechargeable battery 91 approaches full charge, the potential of the second terminal T2 increases.

Since the state of the bimetal disk 20 is a normal temperature state and the B contact 30 is energized, the first terminal T1 and the second terminal T2 are electrically connected.
When the switch of the power source 60 is turned on, the current flows through the first terminal T1, through the bimetal disk 20 and the B contact 30, and through the second terminal T2 to the rechargeable battery 91.
When the rechargeable battery 91 is not fully charged, the voltage applied in the reverse direction to the diode 10 is lower than the Zener voltage, so that no current flows through the diode 10 and the diode 10 does not generate heat.
When charging is continued, the rechargeable battery 91 approaches a fully charged state.
When the rechargeable battery 91 is fully charged, the potential of the second terminal T2 becomes substantially equal to the value of the Zener voltage.
Since the voltage applied to the diode 10 in the reverse direction is approximately equal to the Zener voltage, a current flows in the diode 10 in the reverse direction, and the diode 10 generates heat.
When the heat of the diode 10 is transferred to the bimetal disk 20, the posture of the bimetal disk 20 changes from the normal temperature state to the high temperature state.
When the bimetal disk 20 is in a high temperature state, one B contact electrode 31 and the other B contact electrode 32 are separated from each other, and the B contact 30 is in a non-energized state.
Therefore, the first terminal T1 and the second terminal T2 are in a non-energized state, and power supply from the power source 80 to the rechargeable battery 91 is interrupted.
At the same time that the B contact is not energized, the A contact 50 is energized and energized to the heating element 60, the heating element generates heat, and the heat is transferred to the bimetal 20, so that the high temperature state of the bimetal 20 is maintained. The non-energized state of the contact is maintained.
When the power switch 81 is turned off, the heat generation of the heating element 60 stops and the state of the bimetal disk 20 returns to the normal temperature state, so that the B contact 30 returns to the energized state.

  If the voltage becomes a predetermined value during charging and the bimetal 20 does not enter a high temperature state even when the diode 10 generates heat, the first circuit 40 is melted to cut off the power supply.

When the power source is removed, power is supplied from the rechargeable battery 91 to the load circuit 92 via the bimetal 20 as a voltage determination component.
When an excessive current flows to the power cut-off circuit due to a phenomenon such as an abnormality in the load circuit 92, the current flows through the bimetal disk 20 itself, and the bimetal disk generates heat.
If the excessive current continues to flow, the bimetal disk 20 changes from the normal temperature state to the high temperature state, and the B contact 30 is brought into a non-energized state. When the B contact 30 enters a non-energized state, the non-energized state of the B contact 30 is maintained by the self-holding function described above.
Therefore, when a phenomenon occurs in which excessive current flows from the rechargeable battery 91 to the load circuit 92, the voltage determination component can continuously cut off the supply of power.

FIG. 8 schematically shows a second type circuit of the power cutoff device according to the second embodiment.
The second type of circuit is the same except that the load circuit 92 is directly connected in parallel to the rechargeable battery 91 without a voltage determination component.
Since the main structure and operation are the same as those of the second type circuit of the power cutoff device according to the first embodiment, the same points are omitted and only different points will be described.
The rechargeable battery 91 supplies power directly to the load circuit 92 without passing through the B contact 30.

If the voltage determination method and voltage determination components according to the above-described embodiment are used, the following effects are exhibited.
A diode having a Zener voltage substantially equal to a predetermined value is prepared, a voltage is applied to the diode in the opposite direction, heat generated from the diode is transmitted to the bimetal, and a B contact that opens and closes in conjunction with a change in posture of the bimetal is provided. Further, since the first circuit that is melted by the heat of the diode is provided, it is possible to determine whether or not the voltage exceeds a predetermined value when the state of opening and closing of the B contact and the state of conduction of the first circuit are confirmed.
Also, if an A contact that opens and closes in response to a change in the bimetal posture is provided, and a self-holding circuit that operates by the A contact to hold the bimetal posture is provided, the voltage exceeds a predetermined value and the B contact is in a non-energized state. When this happens, the non-energized state of the B contact can be maintained.
In addition, a heating element that generates heat when energized is provided so as to contact the bimetal, and the A contact and the heating element are connected in series. Therefore, when the B contact is in a non-energized state, the A contact is energized and the heating element generates heat and becomes bimetallic. Since the heat is transferred, the non-energized state of the B contact can be maintained when the voltage exceeds a predetermined value and the B contact becomes non-energized.

Moreover, if the power interruption method and the power interruption device according to the above-described embodiment are used, the following effects are exhibited.
Since the B contact 30 that switches from the energized state to the non-energized state in conjunction with the state change of the bimetal 20 is provided, the voltage reaches a predetermined value when the B contact 30 is connected in series between the rechargeable battery 91 and the power source 80. Then, a current flows in the reverse direction to the diode 10 to generate heat, the state of the bimetal 20 changes, and the B contact 30 changes from the energized state to the non-energized state, and the power source 80 to the rechargeable battery 91 is used. The power supply can be cut off.
In addition, since the predetermined value is the voltage when the rechargeable battery 91 is fully charged, it is possible to accurately detect that the rechargeable battery 91 is fully charged with a simple structure and terminate the charging. it can.
In addition, since the power of the rechargeable battery 91 is supplied to the load circuit 92 via the B contact 30 after the charging is completed, when the load circuit 92 malfunctions and an excessive current flows, The power supply can be cut off.
In addition, a first circuit 40 is prepared by bridging a conductive material that melts when a temperature of a predetermined value or more is received by heat generated from the diode 10 into a pair of terminals, and a B contact is provided between the power supply 80 and the load 90. 30 and the first circuit 40 are connected in series. Therefore, when the diode 10 is abnormally heated, the first circuit 40 is melted and the power supply 80 can be cut off.
In addition, an A contact 50 that is switched from a non-energized state to an energized state in conjunction with the state change of the bimetal 20 from a normal temperature state to a high temperature state is prepared, and a voltage is applied to the second circuit connected in series with the contact 50 and the heating element 60. Since the voltage is applied, the non-energized state can be maintained when the B contact 30 is in a non-energized state.

The present invention is not limited to the embodiments described above, and various modifications can be made without departing from the scope of the invention.
Although it demonstrated based on the structure and effect | action of the electric power interruption apparatus using a voltage determination component, it is not limited to this.
Although the structure of the voltage determination component has been described in detail, the present invention is not limited to this. For example, as long as the same function is exhibited, the arrangement of the diode, the bimetal, the B contact, the A contact, the heating element, or the first circuit Is free.
Although the description has been made in the form of providing one electrode of the B contact on the bimetal and energizing the bimetal, the present invention is not limited to this. For example, one electrode of the B contact is provided on a separate movable arm and the movable arm is swung with the bimetal. Then, the movable arm may be energized.
The self-holding circuit has been described as the second circuit in which the A contact and the heating element are connected in series. However, the self-holding circuit is not limited to this. For example, the high temperature state of the bimetal may be held by an electromagnet driven by the A contact. .

It is side surface sectional drawing of the voltage determination component which concerns on 1st embodiment of this invention. It is front sectional drawing of the voltage determination component which concerns on 1st embodiment of this invention. It is the circuit diagram 1 of the power interruption apparatus which concerns on 1st embodiment of this invention. It is the circuit diagram 2 of the electric power interruption apparatus which concerns on 1st embodiment of this invention. It is side surface sectional drawing of the voltage determination component which concerns on 2nd embodiment of this invention. It is front sectional drawing of the voltage determination component which concerns on 2nd embodiment of this invention. It is the circuit diagram 1 of the electric power interruption apparatus which concerns on 2nd embodiment of this invention. It is the circuit diagram 2 of the electric power interruption apparatus which concerns on 2nd embodiment of this invention. It is a current-voltage characteristic graph of a diode. It is a characteristic view of a bimetal disc.

Explanation of symbols

T1 1st terminal T2 2nd terminal T3 3rd terminal T4 4th terminal 10 Diode 20 Bimetal 21 Plane part 22 Spherical part 30 B contact 31 One B contact electrode 32 The other B contact electrode 33 B contact electrode plate 40 First circuit 50 A contact 51 One A contact electrode 52 Other A contact electrode 53 A Contact electrode plate 60 Heating element 61 Insulator 62 Projection terminal 70 Case 71 Case lid 72 Case body 73 Space 74 Stopper 80 Power supply 81 Power switch 90 Load 91 Rechargeable battery 92 Load circuit

Claims (14)

A voltage determination method for determining that a voltage exceeds a predetermined value,
A diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value;
A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A B contact preparation step of preparing a B contact that changes from an energized state to a non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A first circuit preparation step of preparing a first circuit obtained by bridging a pair of terminals with a conductive material that melts when a temperature of a predetermined value or more is received by heat generated from the diode;
Applying a voltage in the reverse direction to the diode;
A voltage determination method comprising: A voltage determination method for determining that a voltage exceeds a predetermined value,
A diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value;
A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A contact preparation step for preparing an A contact that changes from a non-energized state to an energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A self-holding circuit preparation step of preparing a self-holding circuit for holding the high temperature state of the bimetal when the A contact is energized;
Applying a voltage in the reverse direction to the diode;
A voltage determination method comprising: A voltage determination method for determining that a voltage exceeds a predetermined value,
A diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value;
A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A contact preparation step for preparing an A contact that changes from a non-energized state to an energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A heating element preparing step of preparing a heating element that generates heat and transmits heat to the bimetal when a voltage is applied;
A second circuit preparation step of preparing a second circuit in which the A contact and the heating element are connected in series;
A second circuit voltage application step of applying a voltage to the second circuit;
Applying a voltage in the reverse direction to the diode;
A voltage determination method comprising: A voltage determination component for determining that the voltage exceeds a predetermined value,
A diode having a Zener voltage substantially equal to a predetermined value;
A bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A B contact that switches from the energized state to the non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A first circuit obtained by bridging a pair of terminals with a conductive material that melts when a temperature equal to or higher than a predetermined value is received by heat generated from the diode;
A series connection circuit for connecting the B contact and the first circuit in series;
With
It is possible to apply a voltage to the diode in the reverse direction,
A voltage determination component characterized by that. A voltage determination component for determining that the voltage exceeds a predetermined value,
A diode having a Zener voltage substantially equal to a predetermined value;
A bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A contact that changes from the non-energized state to the energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A self-holding circuit that holds the high temperature state of the bimetal when the A contact is energized;
With
It is possible to apply a voltage to the diode in the reverse direction,
A voltage determination component characterized by that. A voltage determination component for determining that the voltage exceeds a predetermined value,
A diode having a Zener voltage substantially equal to a predetermined value;
A bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A contact that changes from the non-energized state to the energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A heating element that generates heat when a voltage is applied and transmits heat to the bimetal;
A second circuit in which the A contact and the heating element are connected in series;
With
A voltage can be applied to the second circuit;
It is possible to apply a voltage to the diode in the reverse direction,
A voltage determination component characterized by that. A power cutoff method for cutting off the supply of power when the voltage of power supplied from the power source to the load exceeds a predetermined value,
A diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value;
A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A B contact preparation step of preparing a B contact that changes from an energized state to a non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A first circuit preparation step of preparing a first circuit obtained by bridging a pair of terminals with a conductive material that melts when a temperature of a predetermined value or more is received by heat generated from the diode;
A series connection step of connecting the B contact and the first circuit in series between a power source and a load;
Applying a voltage in the reverse direction to the diode;
A power cutoff method comprising: A power cutoff method for cutting off the supply of power when the voltage of power supplied from the power source to the load exceeds a predetermined value,
A diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value;
A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A B contact preparation step of preparing a B contact that changes from an energized state to a non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A contact preparation step for preparing an A contact that changes from a non-energized state to an energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A self-holding circuit preparation step of preparing a self-holding circuit for holding the high temperature state of the bimetal when the A contact is energized;
A series connection step of connecting the B contact in series between a power source and a load;
Applying a voltage in the reverse direction to the diode;
A power cutoff method comprising: A power cutoff method for cutting off the supply of power when the voltage of power supplied from the power source to the load exceeds a predetermined value,
A diode preparation step of preparing a diode having a Zener voltage substantially equal to a predetermined value;
A bimetal preparation step of preparing a bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A B contact preparation step of preparing a B contact that changes from an energized state to a non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A contact preparation step for preparing an A contact that changes from a non-energized state to an energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A heating element preparing step of preparing a heating element that generates heat and transmits heat to the bimetal when a voltage is applied;
A second circuit preparation step of preparing a second circuit in which the A contact and the heating element are connected in series;
A series connection step of connecting the B contact in series between a power source and a load;
A second circuit voltage application step of applying a voltage to the second circuit;
Applying a voltage in the reverse direction to the diode;
A power cutoff method comprising: A contact electrode of the A contact and a contact electrode of the B contact are respectively provided on the bimetal,
The series connection step directly energizes the bimetal;
10. The power cut-off method according to claim 8, wherein A power cutoff device that cuts off the supply of power when the voltage of power supplied from the power source to the load exceeds a predetermined value,
A diode having a Zener voltage substantially equal to a predetermined value;
A bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A B contact that switches from the energized state to the non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A first circuit obtained by bridging a pair of terminals with a conductive material that melts when a temperature equal to or higher than a predetermined value is received by heat generated from the diode;
A series connection circuit connecting the B contact and the first circuit in series between a power source and a load;
A voltage application circuit for applying a voltage to the diode in a reverse direction;
A power cut-off device comprising: A power cutoff device that cuts off the supply of power when the voltage of power supplied from the power source to the load exceeds a predetermined value,
A diode having a Zener voltage substantially equal to a predetermined value;
A bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A B contact that switches from the energized state to the non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A contact that changes from the non-energized state to the energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A self-holding circuit that holds the high temperature state of the bimetal when the A contact is energized;
A series connection circuit for connecting the B contacts in series between a power source and a load;
A voltage application circuit for applying a voltage to the diode in a reverse direction;
A power cut-off device comprising: A power cutoff device that cuts off the supply of power when the voltage of power supplied from the power source to the load exceeds a predetermined value,
A diode having a Zener voltage substantially equal to a predetermined value;
A bimetal capable of changing from a normal temperature state to a high temperature state by receiving heat generated from the diode;
A B contact that switches from the energized state to the non-energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A contact that changes from the non-energized state to the energized state in conjunction with the bimetal changing from a normal temperature state to a high temperature state;
A heating element that generates heat when a voltage is applied and transmits heat to the bimetal;
A second circuit in which the A contact and the heating element are connected in series;
A series connection circuit for connecting the B contacts in series between a power source and a load;
A second circuit voltage application circuit for applying a voltage to the second circuit;
A voltage application circuit for applying a voltage to the diode in a reverse direction;
A power cut-off device comprising: A contact electrode of the A contact and a contact electrode of the B contact are respectively provided on the bimetal,
The series connection circuit directly energizes the bimetal;
The power cut-off device according to claim 12, wherein the power cut-off device is one of claims 12 and 13.

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