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JP2006058168A - Radiation imaging device and radiation imaging method - Google Patents

Radiation imaging device and radiation imaging method Download PDF

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JP2006058168A
JP2006058168A JP2004241272A JP2004241272A JP2006058168A JP 2006058168 A JP2006058168 A JP 2006058168A JP 2004241272 A JP2004241272 A JP 2004241272A JP 2004241272 A JP2004241272 A JP 2004241272A JP 2006058168 A JP2006058168 A JP 2006058168A
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radiation
image sensor
image
radiation imaging
light
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Kazuhisa Miyaguchi
和久 宮口
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Priority to JP2004241272A priority Critical patent/JP2006058168A/en
Priority to EP05768578.6A priority patent/EP1788409B1/en
Priority to US11/660,366 priority patent/US7705317B2/en
Priority to PCT/JP2005/014323 priority patent/WO2006018983A1/en
Priority to TW094127189A priority patent/TWI421528B/en
Publication of JP2006058168A publication Critical patent/JP2006058168A/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • G01T1/2006—Measuring radiation intensity with scintillation detectors using a combination of a scintillator and photodetector which measures the means radiation intensity
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/30—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from X-rays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/496—Luminescent members, e.g. fluorescent sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Led Device Packages (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)

Abstract

【課題】 撮像エリアの面積を確保したまま、さらに装置全体を小型化・薄型化することを可能とした放射線撮像装置とこれを用いた放射線撮像方法を提供する。
【解決手段】 放射線入射により所定波長の光を発するシンチレータフィルム２は、イメージセンサ１と回路基板３とに挟まれてケース５内に収容されている。イメージセンサ１は、その受光部１１がシンチレータフィルム２に密接するとともに、その電極部１２はシンチレータフィルム２から外側に迫り出して露出して配置されており、電極部１２は、回路基板３の電極部３２にワイヤ６によって電気的に接続されている。
【選択図】 図１
PROBLEM TO BE SOLVED: To provide a radiation imaging apparatus and a radiation imaging method using the radiation imaging apparatus capable of further reducing the size and thickness of the entire apparatus while ensuring the area of the imaging area.
A scintillator film 2 that emits light of a predetermined wavelength upon incidence of radiation is sandwiched between an image sensor 1 and a circuit board 3 and accommodated in a case 5. In the image sensor 1, the light receiving portion 11 is in close contact with the scintillator film 2, and the electrode portion 12 is disposed so as to protrude outward from the scintillator film 2, and the electrode portion 12 is an electrode of the circuit board 3. The part 32 is electrically connected by a wire 6.
[Selection] Figure 1

Description

本発明は、放射線画像を画像信号として取得する放射線撮像装置およびこの装置を用いた放射線撮像方法に関し、特に、口腔内に挿入して歯牙の放射線画像を取得するような用途に適した小型・薄型化を可能とした放射線撮像装置とこれを用いた放射線撮像方法に関する。   The present invention relates to a radiation imaging apparatus that acquires a radiographic image as an image signal and a radiation imaging method using the apparatus, and in particular, is small and thin that is suitable for applications such as insertion into the oral cavity to acquire a radiographic image of a tooth. The present invention relates to a radiation imaging apparatus that can be realized and a radiation imaging method using the same.

医療用のＸ線診断装置としてＸ線感光フィルムに代えてＣＣＤを用いた放射線イメージングシステムが普及してきている。このような放射線イメージングシステムにおいては、複数の画素を有する放射線撮像装置を用いて放射線による２次元画像データを電気信号として取得し、この信号を処理装置により処理して、モニタ上に表示している。   As a medical X-ray diagnostic apparatus, a radiation imaging system using a CCD instead of an X-ray photosensitive film has become widespread. In such a radiation imaging system, two-dimensional image data based on radiation is acquired as an electrical signal using a radiation imaging apparatus having a plurality of pixels, and this signal is processed by a processing device and displayed on a monitor. .

歯科用等の口腔内に挿入して用いる放射線撮像装置としては、特許文献１に開示されているようなタイプの放射線撮像装置が知られている。この放射線検出器は、セラミックやガラス、エポキシ製の配線基板上にＣＣＤ等の固体撮像素子からなるイメージセンサを配置し、このイメージセンサの受光面に放射線を可視光等のイメージセンサで検出可能な光に変換するシンチレータを配置したものである。
特開２００１−３３０６７８号公報 A radiation imaging apparatus of the type disclosed in Patent Document 1 is known as a radiation imaging apparatus used by being inserted into the oral cavity for dentistry or the like. In this radiation detector, an image sensor composed of a solid-state image sensor such as a CCD is arranged on a ceramic, glass or epoxy wiring board, and radiation can be detected by an image sensor such as visible light on the light receiving surface of the image sensor. A scintillator that converts light is arranged.
JP 2001-330678 A

このように口腔内に挿入するタイプの放射線撮像装置については、できる限り小型化、薄型化することが要求されている。逆に、撮像面積についてはできるかぎり大型化することが望まれている。このため、撮像面と同一面における本体の投影面積をイメージセンサの面積にできるかぎり近づけることが必要となっている。   As described above, a radiation imaging apparatus of a type that is inserted into the oral cavity is required to be as small and thin as possible. Conversely, it is desired to increase the imaging area as much as possible. For this reason, it is necessary to make the projected area of the main body on the same plane as the imaging surface as close as possible to the area of the image sensor.

特許文献１に開示されている放射線撮像素子は、従来の撮像素子に比べると小型化、薄型化されているが、イメージセンサを載置する基台はイメージセンサより横に広がっており、撮像エリアの面積を維持したまま、さらに小型化・薄型化するのは難しい。   The radiation image sensor disclosed in Patent Document 1 is smaller and thinner than the conventional image sensor, but the base on which the image sensor is placed is wider than the image sensor, and the imaging area It is difficult to further reduce the size and thickness while maintaining the same area.

そこで本発明は、撮像エリアの面積を確保したまま、さらに装置全体を小型化・薄型化することを可能とした放射線撮像装置とこれを用いた放射線撮像方法を提供することを課題とする。   Therefore, an object of the present invention is to provide a radiation imaging apparatus and a radiation imaging method using the radiation imaging apparatus that can further reduce the size and thickness of the entire apparatus while ensuring the area of the imaging area.

上記課題を解決するため、本発明にかかる放射線撮像装置は、（１）入射Ｘ線に応じて所定波長の光を発生する平板状のシンチレータ層と、（２）基板の一方の面上にシンチレータ層が発する所定波長の光を検出する光検出部と電極部とを備え、光検出部がシンチレータ層の一方の面に密接するとともに、電極部がシンチレータ層の外側に露出するよう配置されているイメージセンサと、（３）シンチレータ層の他方の面上に配置され、その電極部とイメージセンサの電極部とが電気的に接続されている回路基板と、を備えていることを特徴とする。   In order to solve the above problems, a radiation imaging apparatus according to the present invention includes (1) a flat scintillator layer that generates light of a predetermined wavelength in response to incident X-rays, and (2) a scintillator on one surface of a substrate. A light detection unit that detects light of a predetermined wavelength emitted from the layer and an electrode unit are arranged so that the light detection unit is in close contact with one surface of the scintillator layer and the electrode unit is exposed to the outside of the scintillator layer. An image sensor and (3) a circuit board disposed on the other surface of the scintillator layer and electrically connected to the electrode portion of the image sensor and the electrode portion of the image sensor.

この放射線撮像装置においては、シンチレータ層をイメージセンサと、回路基板とで挟み込んだ構成を採用している。そして、シンチレータ層より外側にはみ出したイメージセンサの電極部をシンチレータ層を挟んで反対側にある回路基板の電極にワイヤー等により電気的に接続する構成をとっている。   This radiation imaging apparatus employs a configuration in which a scintillator layer is sandwiched between an image sensor and a circuit board. The electrode portion of the image sensor that protrudes outside the scintillator layer is electrically connected to the electrode of the circuit board on the opposite side across the scintillator layer by a wire or the like.

シンチレータ層、イメージセンサ、回路基板の全てを収容し、少なくともその放射線入射面が放射線透過性であるケースをさらに備えていることが好ましい。このケースは全体が放射線透過性であってもよいし、放射線入射面と反対の面は不透過性であってもよい。ケースは防湿構造を採用していることが好ましい。   It is preferable to further include a case that accommodates all of the scintillator layer, the image sensor, and the circuit board, and at least the radiation incident surface thereof is radiation transmissive. In this case, the whole may be radiolucent, or the surface opposite to the radiation incident surface may be opaque. The case preferably employs a moisture-proof structure.

本発明にかかる放射線撮像方法は、本発明にかかる放射線撮像装置を用いて放射線画像を画像信号として取得する放射線撮像方法であって、（１）放射線画像をイメージセンサの光検出部形成面と反対の面から入射させてイメージセンサを透過させ、（２）シンチレータ層に到達した放射線によりシンチレータ層で放射線画像を所定波長の光による光画像に変換し、（３）発生した光画像をイメージセンサの光検出部で検出し、（４）検出した画像信号をイメージセンサの電極部から回路基板へと伝送して、回路基板を通じて取得する工程を備えていることを特徴とする。   A radiation imaging method according to the present invention is a radiation imaging method for acquiring a radiation image as an image signal using the radiation imaging apparatus according to the present invention, and (1) the radiation image is opposite to the light detection unit forming surface of the image sensor. (2) The radiation image that has reached the scintillator layer is converted by the scintillator layer into a light image by light of a predetermined wavelength, and (3) the generated light image is transmitted through the image sensor. And (4) a step of transmitting the detected image signal from the electrode portion of the image sensor to the circuit board and acquiring it through the circuit board.

本発明によれば、撮像装置のうち、シンチレータ層より外側に張り出した領域に存在する構成部分をイメージセンサの電極部のみに限定することができる。このため、受光エリアの外側に張り出す領域を小さくすることができ、装置全体の小型化が可能となる。また、回路基板をシンチレータ層上に形成することで、薄型の回路基板を用いることができ、装置全体の薄型化を達成することができる。さらに、このような配置とすることで、イメージセンサの電極部と、回路基板の電極部との配線作業も容易になる。   According to the present invention, it is possible to limit the components existing in the region protruding outside the scintillator layer to only the electrode portion of the image sensor in the imaging device. For this reason, it is possible to reduce a region protruding outside the light receiving area, and to reduce the size of the entire apparatus. Further, by forming the circuit board on the scintillator layer, a thin circuit board can be used, and the overall thickness of the device can be reduced. Furthermore, with this arrangement, wiring work between the electrode part of the image sensor and the electrode part of the circuit board is facilitated.

放射線入射面を放射線透過性としたケース内に収容することで、装置の耐湿性、耐久性が向上し、また、装置の取り扱いも容易となる。特に、口腔内に挿入するタイプの放射線撮像装置としては、外側に凹凸のない形状とすることにより、被験者の負担が軽くなり、撮影時の自由度が増す。   By housing the radiation incident surface in a radiation transmissive case, the moisture resistance and durability of the device are improved, and the device is easy to handle. In particular, as a radiation imaging apparatus of the type that is inserted into the oral cavity, the burden on the subject is lightened and the degree of freedom at the time of photographing is increased by adopting a shape having no irregularities on the outside.

放射線をイメージセンサの裏側から入射させることで、ノイズの要因となる低エネルギー放射線を遮断することができる。このため、シンチレータ層へと到達する放射線画像を鮮明なものとすることができ、これにより発生する光画像もノイズの少ないものとなるから、イメージセンサでも鮮明な画像を検出することができる。   By making the radiation incident from the back side of the image sensor, it is possible to block low-energy radiation that causes noise. For this reason, the radiographic image reaching the scintillator layer can be made clear, and the light image generated thereby also has less noise, so that the image sensor can also detect a clear image.

以下、添付図面を参照して本発明の好適な実施の形態について詳細に説明する。説明の理解を容易にするため、各図面において同一の構成要素に対しては可能な限り同一の参照番号を附し、重複する説明は省略する。   DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described in detail with reference to the accompanying drawings. In order to facilitate the understanding of the description, the same reference numerals are given to the same components in the drawings as much as possible, and duplicate descriptions are omitted.

図１は、本発明にかかる放射線撮像装置１００の縦断面図であり、図２は、図１のケース５の内部に収容された撮像部２００の縦断面図である。この放射線撮像装置１００は、樹脂製のケース５内に撮像部２００が収容されたものであって、撮像部２００は、保護用のゴムシート４上に載置されている。この放射線撮像装置１００は、被験者の口腔内に挿入して、その歯牙等の放射線画像を取得するものであり、ゴムシート４側のケース表面が入射面５ａとなる。   FIG. 1 is a longitudinal sectional view of a radiation imaging apparatus 100 according to the present invention, and FIG. 2 is a longitudinal sectional view of an imaging unit 200 accommodated in the case 5 of FIG. The radiation imaging apparatus 100 includes an imaging unit 200 housed in a resin case 5, and the imaging unit 200 is placed on a protective rubber sheet 4. This radiation imaging apparatus 100 is inserted into the subject's mouth and acquires a radiation image of its teeth and the like, and the case surface on the rubber sheet 4 side becomes the incident surface 5a.

撮像部２００は、イメージセンサ１上に、シンチレータフィルム２、回路基板３を積層した構成をとる。イメージセンサ１は、長方形の平板状であるシリコン基板１０上にＣＣＤ（電荷結合素子：Charge Coupled Device）を形成して受光部１１としたものであり、その短辺の一方に沿って信号読み出しおよびセンサ制御用の電極部（ボンディングパット）１２が形成されている。   The imaging unit 200 has a configuration in which a scintillator film 2 and a circuit board 3 are stacked on the image sensor 1. The image sensor 1 includes a CCD (Charge Coupled Device) formed on a silicon substrate 10 that is a rectangular flat plate, and serves as a light receiving unit 11. An electrode part (bonding pad) 12 for sensor control is formed.

シンチレータフィルム２は、図３に示されるように、３層の積層構造をなし、サポート基板２０上に、シンチレータ２１が堆積され、その表面を保護膜２２で覆っている。サポート基板２０としては、例えば、プラスチックが使用されるが、セラミックやガラス、光反射性を有する金属基板、例えば、アルミを用いてもよい。シンチレータ２１の材料としては、ＴｂドープのＧｄ２Ｏ２ＳやＴｌドープのＣｓＩ等を利用することができる。保護膜２２としては、透明な有機膜あるいは無機膜を用いるとよく、水分不透過性であることが好ましい。例えば、ＰＥＴ（polyethylene terephthalate）、パリレン系樹脂を用いることができ、ポリパラキシリレン樹脂（スリーボンド社製、商品名パリレン）のうち、ポリパラクロロキシリレン（同社製、商品名パリレンＣ）等が好適である。 As shown in FIG. 3, the scintillator film 2 has a three-layer structure. A scintillator 21 is deposited on the support substrate 20 and the surface thereof is covered with a protective film 22. For example, plastic is used as the support substrate 20, but ceramic, glass, or a metal substrate having light reflectivity, for example, aluminum may be used. As a material of the scintillator 21, Tb-doped Gd 2 O 2 S, Tl-doped CsI, or the like can be used. As the protective film 22, a transparent organic film or an inorganic film may be used, and it is preferable that the protective film 22 be impermeable to moisture. For example, PET (polyethylene terephthalate), a parylene-based resin can be used, and among polyparaxylylene resins (manufactured by ThreeBond, trade name Parylene), polyparachloroxylylene (trade name, parylene C), etc. Is preferred.

回路基板３は、電子部品を実装したＦＰＣ（Flexible Printed Circuit：フレキシブル印刷回路）、ＰＣＢ（Printed Circuit Board：印刷回路基板）またはセラミック基板からなる基板３０と、その上に実装された回路部品３１、電極部３２からなる。イメージセンサ１の電極部１２と、対応する回路基板３の電極部３２とはワイヤ６により電気的に接続されている。回路基板３の所定の回路部品３１に設けられた出力端子３３には出力ケーブル３４が接続され、ケース５を貫通してケース外へと引き出され、図示していない処理装置や表示装置へと接続される。   The circuit board 3 includes a board 30 made of an FPC (Flexible Printed Circuit), PCB (Printed Circuit Board) or ceramic board on which electronic parts are mounted, and a circuit part 31 mounted thereon. The electrode portion 32 is included. The electrode portions 12 of the image sensor 1 and the corresponding electrode portions 32 of the circuit board 3 are electrically connected by wires 6. An output cable 34 is connected to an output terminal 33 provided on a predetermined circuit component 31 of the circuit board 3, passes through the case 5, is pulled out of the case, and is connected to a processing device or a display device (not shown). Is done.

次に、この放射線撮像装置の製造方法について具体的に説明する。最初に、図４、図５に示されるようなイメージセンサ１を準備する。このイメージセンサ１は、シリコンウェハ上に通常の半導体製造プロセスを用いて、受光画素を二次元に配列した受光部１１と、これに電気的に接続された電極部１２とを形成し、これをダイシングによってチップ状に分割することで得られる。受光部１１の有効受光領域は３０ｍｍ×２０ｍｍ程度であり、基板１０の面積は３２ｍｍ×２２ｍｍ程度である。受光部１１は、長方形の基板１０の一方の短辺側に偏って配置されており、他方の短辺側に沿って電極部１２が配置される。基板１０の厚さは、半導体製造プロセス終了時点では６００〜７００μｍ程度であるが、受光部１１の反対面（入射面）１０ａを研磨することにより、その厚さを３００μｍ程度まで薄くしておくと、装置のより一層の薄型化が可能となるため好ましい。   Next, a method for manufacturing the radiation imaging apparatus will be specifically described. First, an image sensor 1 as shown in FIGS. 4 and 5 is prepared. This image sensor 1 uses a normal semiconductor manufacturing process on a silicon wafer to form a light receiving portion 11 in which light receiving pixels are two-dimensionally arranged and an electrode portion 12 electrically connected to the light receiving portion 11. It is obtained by dividing into chips by dicing. The effective light receiving area of the light receiving unit 11 is about 30 mm × 20 mm, and the area of the substrate 10 is about 32 mm × 22 mm. The light receiving unit 11 is arranged so as to be biased toward one short side of the rectangular substrate 10, and the electrode unit 12 is arranged along the other short side. The thickness of the substrate 10 is about 600 to 700 μm at the end of the semiconductor manufacturing process, but if the opposite surface (incident surface) 10a of the light receiving portion 11 is polished, the thickness is reduced to about 300 μm. It is preferable because the apparatus can be made thinner.

次に、このイメージセンサ１の受光部１１より縦横とも若干大きめ（３１ｍｍ×２１ｍｍ）のシンチレータフィルム２（厚さ３００μｍ程度）を用意し、受光部１１を覆うようにして、その保護膜２２を受光部１１側へと向けて接着剤、樹脂等により貼り付ける（図６、図７参照）。シンチレータフィルム２のサポート基板２０、シンチレータ２１、保護膜２２のそれぞれの厚みは、例えば、１５０μｍ、１５０μｍ、１０μｍである。この接着剤、樹脂は、固化時にシンチレータ２１が発する光を透過する特性を有しているものを選択する。そして、電極部１２に接着剤、樹脂等がつかず、電極部１２を確実に露出させるため、貼り付け時（イメージセンサ１側に接着剤、樹脂を塗布する場合には塗布時）には電極部１２とその周囲をマスキングして覆っておくとよい。   Next, a scintillator film 2 (thickness of about 300 μm) that is slightly larger (31 mm × 21 mm) than the light receiving portion 11 of the image sensor 1 is prepared, and the protective film 22 is received so as to cover the light receiving portion 11. It sticks with the adhesive agent, resin, etc. toward the part 11 side (refer FIG. 6, FIG. 7). The thicknesses of the support substrate 20, the scintillator 21, and the protective film 22 of the scintillator film 2 are, for example, 150 μm, 150 μm, and 10 μm. As the adhesive and resin, those having a property of transmitting light emitted from the scintillator 21 at the time of solidification are selected. In order to ensure that the electrode part 12 is not exposed to the electrode part 12 and the electrode part 12 is reliably exposed, the electrode part 12 is attached at the time of application (when applying adhesive or resin on the image sensor 1 side). It is good to mask and cover the part 12 and its periphery.

次に、シンチレータフィルム２上に部品実装済みの回路基板３を接着する（図８、図９参照）。なお、先にシンチレータフィルム２の基板２０上に回路基板３を接着しておいて、これをイメージセンサ１へと貼り付けてもよい。ここで、回路基板３の電極部３２がイメージセンサ１の電極部１２側に配置され、対応する電極同士が対向するように配置する。そして、ワイヤ６により、対応する電極同士を接続する。このとき、ワイヤ６が電極部１２から外側へはみ出さないように注意して配線を行う。   Next, the circuit board 3 on which components are mounted is bonded onto the scintillator film 2 (see FIGS. 8 and 9). Note that the circuit board 3 may be bonded to the substrate 20 of the scintillator film 2 first, and may be attached to the image sensor 1. Here, the electrode part 32 of the circuit board 3 is arrange | positioned at the electrode part 12 side of the image sensor 1, and arrange | positions so that corresponding electrodes may oppose. Then, the corresponding electrodes are connected to each other by the wire 6. At this time, wiring is performed with care so that the wire 6 does not protrude outward from the electrode portion 12.

これにより、図２に示される撮像部２００が得られる。部品が実装された回路基板３の厚みは５００μｍ程度であるため、撮像部２００全体の厚みは１．１ｍｍ程度ときわめて薄くできる。また、撮像部２００において有効受光領域より外側にはみ出している領域を小さくすることができ、また、ワイヤ６がイメージセンサ１より外側にはみ出すことがないため、撮像部２００が小型化される。   Thereby, the imaging unit 200 shown in FIG. 2 is obtained. Since the thickness of the circuit board 3 on which the components are mounted is about 500 μm, the entire thickness of the imaging unit 200 can be made extremely thin, about 1.1 mm. In addition, since the area that protrudes outside the effective light receiving area in the imaging unit 200 can be reduced, and the wire 6 does not protrude outside the image sensor 1, the imaging unit 200 is downsized.

こうして製造された撮像部２００をケース５内のゴムシート４に載置し、出力端子３３にケーブル３４を接続し、ケース５をケーブル３４が貫通した状態で、ケース５を密閉する。これにより、図１に示される本発明にかかる放射線撮像装置１００が得られる。   The imaging unit 200 thus manufactured is placed on the rubber sheet 4 in the case 5, the cable 34 is connected to the output terminal 33, and the case 5 is sealed with the cable 34 penetrating the case 5. Thereby, the radiation imaging apparatus 100 according to the present invention shown in FIG. 1 is obtained.

ゴムシート４の厚さは２００μｍ程度で十分であり、ケース５の外皮の厚さは０．５ｍｍ程度とすればよいため、放射線撮像装置１００全体の厚さは３ｍｍ以下とすることができ、十分に薄型化・小型化が可能となる。   Since the thickness of the rubber sheet 4 is about 200 μm and the thickness of the outer skin of the case 5 may be about 0.5 mm, the thickness of the radiation imaging apparatus 100 as a whole can be 3 mm or less. Can be made thinner and smaller.

次に、図１０を参照して、この放射線撮像装置を用いた放射線撮像方法を説明する。被験者７の口腔内に放射線撮像装置１００を配置し、放射線源８から放射線撮像装置１００に向けて放射線を投射する。このとき、放射線源８側へ入射面５ａ側が配置される。放射線撮像装置１００が小型・薄型であるため、被験者７の口腔内に挿入する際に被験者７が感ずる異物感を緩和することができ、また、口腔内に配置する際の自由度も向上するという利点がある。   Next, a radiation imaging method using this radiation imaging apparatus will be described with reference to FIG. The radiation imaging apparatus 100 is disposed in the oral cavity of the subject 7 and the radiation is projected from the radiation source 8 toward the radiation imaging apparatus 100. At this time, the incident surface 5a side is disposed on the radiation source 8 side. Since the radiation imaging apparatus 100 is small and thin, the foreign object feeling felt by the subject 7 when inserted into the oral cavity of the subject 7 can be alleviated, and the degree of freedom when placing in the oral cavity is also improved. There are advantages.

放射線源８から発せられた放射線は被験者７の口腔内へと入射する際に、歯牙、歯茎等に吸収され、それらに応じた放射線画像情報を有した状態で放射線撮像装置１００へと入射する。入射面５ａから入射した放射線はケース５、ゴムシート４を通過して、撮像部２００のイメージセンサ１の入射面１０ａへと入射する。イメージセンサ１を通過する際に、低エネルギーの放射線は吸収されて、高エネルギーの放射線がシンチレータフィルム２へと入射する。   When the radiation emitted from the radiation source 8 enters the oral cavity of the subject 7, the radiation is absorbed by the teeth, gums, and the like, and enters the radiation imaging apparatus 100 with radiation image information corresponding thereto. Radiation incident from the incident surface 5 a passes through the case 5 and the rubber sheet 4 and enters the incident surface 10 a of the image sensor 1 of the imaging unit 200. When passing through the image sensor 1, the low energy radiation is absorbed, and the high energy radiation enters the scintillator film 2.

シンチレータフィルム２へと入射した放射線は、その保護膜２２を通過し、シンチレータ２１で吸収されて、そのエネルギー量に応じた所定波長の光（本実施形態では波長５５０ｎｍを中心とした光）が発生する。発生した光は、直接、あるいは、サポート基板２０により反射されて、イメージセンサ１の受光部１１へと入射し、各画素において電気信号へと変換される。受光部１１へと到達した光は元の放射線画像情報を含む光画像であり、この光に対応して各画素で得られる電気信号は元の放射線画像に対応したものとなる。   The radiation incident on the scintillator film 2 passes through the protective film 22 and is absorbed by the scintillator 21 to generate light having a predetermined wavelength corresponding to the amount of energy (in this embodiment, light centered on a wavelength of 550 nm). To do. The generated light is reflected directly or by the support substrate 20 and enters the light receiving unit 11 of the image sensor 1, and is converted into an electric signal in each pixel. The light reaching the light receiving unit 11 is a light image including the original radiation image information, and the electrical signal obtained in each pixel corresponding to this light corresponds to the original radiation image.

変換された電気信号は、各画素および図示していない転送ラインを通じて電極部１２へと転送され、さらに、ワイヤ６、電極部３２を介して回路基板３へと転送され、所定の信号処理を行った後に、出力端子３３に接続された出力ケーブル３４によって、外部の処理装置９０に転送される。処理装置９０においては、転送された画像情報の外部記憶装置への蓄積・保存や、画像情報を基に放射線画像のモニタ９１への表示等を行う。   The converted electric signal is transferred to the electrode unit 12 through each pixel and a transfer line (not shown), and further transferred to the circuit board 3 through the wire 6 and the electrode unit 32 to perform predetermined signal processing. After that, the data is transferred to the external processing device 90 by the output cable 34 connected to the output terminal 33. The processing device 90 stores and stores the transferred image information in an external storage device, displays a radiation image on the monitor 91 based on the image information, and the like.

本発明にかかる放射線撮像装置１００によれば、低エネルギーの放射線をイメージセンサ１の基板で遮蔽することで、ノイズ成分を減らして、鮮明な放射線画像を得ることができる。また、シンチレータフィルム２のシンチレータ２１で発生した光のうち、イメージセンサ１と逆方向へ進行する光を基板２０で反射してイメージセンサ１へと導くことで、シンチレータ２１で発生した光を効率よくイメージセンサ１へと導くことができるので、光出力を増大させて鮮明でコントラストの高い画像を得ることもできる。このため、放射線量が少なくてすみ、被験者や操作者の被爆量を低減する効果もある。   According to the radiation imaging apparatus 100 according to the present invention, low-energy radiation is shielded by the substrate of the image sensor 1, so that a noise component can be reduced and a clear radiation image can be obtained. In addition, among the light generated in the scintillator 21 of the scintillator film 2, the light traveling in the opposite direction to the image sensor 1 is reflected by the substrate 20 and guided to the image sensor 1, so that the light generated in the scintillator 21 can be efficiently generated. Since the light can be guided to the image sensor 1, it is possible to increase the light output and obtain a clear and high-contrast image. For this reason, the radiation dose is small, and there is an effect of reducing the exposure dose of the subject and the operator.

以上の説明では、シンチレータフィルム２を用いたが、シンチレータ材料を直接、イメージセンサの受光部１１上に堆積させてもよい。この場合、シンチレータ上に保護膜を形成するとよく、保護膜を多層構造として間に反射膜を形成すると好ましい。なお、ケースによって十分な耐湿性・気密性が確保できる場合には、必ずしも保護膜は必要としない。   In the above description, the scintillator film 2 is used. However, the scintillator material may be directly deposited on the light receiving portion 11 of the image sensor. In this case, a protective film may be formed on the scintillator, and a reflective film is preferably formed between the protective film having a multilayer structure. Note that the protective film is not necessarily required when sufficient moisture resistance and airtightness can be ensured by the case.

以上の説明では、撮像素子としてＣＣＤを用いた場合を例に説明してきたが、ＣＭＯＳ（Complementary Metal Oxide Semiconductor:相補型金属酸化膜半導体）やその他の固体撮像素子を用いてもよい。シンチレータが放射線入射により発する光は可視光に限られず、イメージセンサで検出可能な波長範囲の光であれば、赤外光や紫外光であってもよい。   In the above description, a case where a CCD is used as an image sensor has been described as an example, but a CMOS (Complementary Metal Oxide Semiconductor) or other solid-state image sensor may be used. The light emitted by the scintillator upon incidence of radiation is not limited to visible light, and may be infrared light or ultraviolet light as long as it is in a wavelength range detectable by the image sensor.

本発明にかかる放射線撮像装置１００の縦断面図である。1 is a longitudinal sectional view of a radiation imaging apparatus 100 according to the present invention. 図１の装置のケース５の内部に収容された撮像部２００の縦断面図である。It is a longitudinal cross-sectional view of the imaging part 200 accommodated in the inside of the case 5 of the apparatus of FIG. 図１の装置のシンチレータフィルム２の構成を示す縦断面図である。It is a longitudinal cross-sectional view which shows the structure of the scintillator film 2 of the apparatus of FIG. 図１の装置で用いられるイメージセンサ１の平面図である。It is a top view of the image sensor 1 used with the apparatus of FIG. 図４の縦断面図である。It is a longitudinal cross-sectional view of FIG. 図４のイメージセンサ１にシンチレータフィルム２を貼り付けた状態を示す平面図である。It is a top view which shows the state which affixed the scintillator film 2 on the image sensor 1 of FIG. 図６の縦断面図である。It is a longitudinal cross-sectional view of FIG. 図６のシンチレータフィルム２上に回路基板３を搭載した状態を示す平面図である。It is a top view which shows the state which mounted the circuit board 3 on the scintillator film 2 of FIG. 図８の縦断面図である。It is a longitudinal cross-sectional view of FIG. 図１の装置の使用方法を説明する図である。It is a figure explaining the usage method of the apparatus of FIG.

符号の説明Explanation of symbols

１…イメージセンサ、２…シンチレータフィルム、３…回路基板、４…ゴムシート、５…ケース、５ａ…入射面、６…ワイヤ、７…被験者、８…放射線源、１０…シリコン基板、１０ａ…入射面、１１…受光部、１２…電極部、２０…サポート基板、２１…シンチレータ、２２…保護膜、３０…基板、３１…回路部品、３２…電極部、３３…出力端子、３４…出力ケーブル、９０…処理装置、９１…モニタ、１００…放射線撮像装置、２００…撮像部。   DESCRIPTION OF SYMBOLS 1 ... Image sensor, 2 ... Scintillator film, 3 ... Circuit board, 4 ... Rubber sheet, 5 ... Case, 5a ... Incident surface, 6 ... Wire, 7 ... Test subject, 8 ... Radiation source, 10 ... Silicon substrate, 10a ... Incident 11, light receiving unit, 12 electrode unit, 20 support substrate, 21 scintillator, 22 protective film, 30 substrate, 31 circuit component, 32 electrode unit, 33 output terminal, 34 output cable, 90 ... processing device, 91 ... monitor, 100 ... radiation imaging device, 200 ... imaging unit.

Claims (3)

入射Ｘ線に応じて所定波長の光を発生する平板状のシンチレータ層と、
基板の一方の面上に前記シンチレータ層が発する所定波長の光を検出する光検出部と電極部とを備え、該光検出部が前記シンチレータ層の一方の面に密接するとともに、該電極部が前記シンチレータ層の外側に露出するよう配置されているイメージセンサと、
前記シンチレータ層の他方の面上に配置され、その電極部と前記イメージセンサの電極部とが電気的に接続されている回路基板と、
を備えていることを特徴とする放射線撮像装置。 A flat scintillator layer that generates light of a predetermined wavelength in response to incident X-rays;
On one surface of the substrate, a light detection unit that detects light of a predetermined wavelength emitted from the scintillator layer and an electrode unit, the light detection unit is in close contact with one surface of the scintillator layer, and the electrode unit An image sensor arranged to be exposed to the outside of the scintillator layer;
A circuit board disposed on the other surface of the scintillator layer, the electrode part of which is electrically connected to the electrode part of the image sensor;
A radiation imaging apparatus comprising: 前記シンチレータ層、イメージセンサ、回路基板の全てを収容し、少なくともその放射線入射面が放射線透過性であるケースをさらに備えていることを特徴とする請求項１記載の放射線撮像装置。   The radiation imaging apparatus according to claim 1, further comprising a case that accommodates all of the scintillator layer, the image sensor, and the circuit board, and at least a radiation incident surface thereof is radiation transmissive. 請求項１または２に記載の放射線撮像装置を用いて放射線画像を画像信号として取得する放射線撮像方法であって、
放射線画像を前記イメージセンサの光検出部形成面と反対の面から入射させて前記イメージセンサを透過させ、
前記シンチレータ層に到達した放射線によりシンチレータ層で放射線画像を所定波長の光による光画像に変換し、
発生した光画像を前記イメージセンサの光検出部で検出し、
検出した画像信号を前記イメージセンサの電極部から前記回路基板へと伝送して、前記回路基板を通じて取得する
工程を備えていることを特徴とする放射線撮像方法。 A radiation imaging method for acquiring a radiation image as an image signal using the radiation imaging apparatus according to claim 1,
A radiation image is incident from a surface opposite to the light detection portion forming surface of the image sensor and transmitted through the image sensor,
The radiation image that has reached the scintillator layer is converted into a light image by light of a predetermined wavelength in the scintillator layer,
The generated light image is detected by the light detection unit of the image sensor,
A radiation imaging method comprising: a step of transmitting a detected image signal from an electrode portion of the image sensor to the circuit board and acquiring the image signal through the circuit board.
JP2004241272A 2004-08-20 2004-08-20 Radiation imaging device and radiation imaging method Pending JP2006058168A (en)

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US11/660,366 US7705317B2 (en) 2004-08-20 2005-08-04 Radiation imaging device and radiation imaging method
PCT/JP2005/014323 WO2006018983A1 (en) 2004-08-20 2005-08-04 Radiation imaging device and radiation imaging method
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