JP2005349515A - An aluminum nitride nanotube having an outer wall and an inner wall covered with a carbon film, and a method for producing the same. - Google Patents
An aluminum nitride nanotube having an outer wall and an inner wall covered with a carbon film, and a method for producing the same. Download PDFInfo
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- JP2005349515A JP2005349515A JP2004171967A JP2004171967A JP2005349515A JP 2005349515 A JP2005349515 A JP 2005349515A JP 2004171967 A JP2004171967 A JP 2004171967A JP 2004171967 A JP2004171967 A JP 2004171967A JP 2005349515 A JP2005349515 A JP 2005349515A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 44
- 239000002071 nanotube Substances 0.000 title claims abstract description 29
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 19
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 12
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 9
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims abstract description 8
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 230000005693 optoelectronics Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000001241 arc-discharge method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
【課題】 窒化アルミニウムナノチューブの外壁と内壁に炭素膜を成長させた、新規で、オプトエレクトロニクス、電界放出材料などの分野への応用が期待される、外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブとその製造方法を提供すること。
【解決手段】 アルミナ粉末とカーボンナノチューブの混合物を、不活性ガス雰囲気中で1450〜1600℃に0.4〜１時間加熱した後、不活性ガスをアンモニアガスに切り替え、引き
続き1300〜1600℃に0.5〜1.2時間加熱する。
【選択図】 図２
PROBLEM TO BE SOLVED: To develop a new aluminum film having a carbon film on the outer wall and inner wall of an aluminum nitride nanotube, and is expected to be applied to fields such as optoelectronics and field emission materials. The outer wall and inner wall are covered with a carbon film. To provide a nanotube and a manufacturing method thereof.
SOLUTION: A mixture of alumina powder and carbon nanotubes is heated to 1450-1600 ° C. in an inert gas atmosphere for 0.4 to 1 hour, then the inert gas is switched to ammonia gas, and subsequently 0.5 to 1.2 at 1300 to 1600 ° C. Heat for hours.
[Selection] Figure 2
Description
この出願の発明は、外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブとその製造方法に関する。 The invention of this application relates to an aluminum nitride nanotube whose outer wall and inner wall are covered with a carbon film, and a method for producing the same.
一次元の窒化アルミニウムナノワイヤー（たとえば、非特許文献１〜３参照）や窒化アルミニウムナノチューブ（たとえば、非特許文献４、５参照）を製造する方法はこれまでに知られている。このうち、窒化アルミニウムナノチューブは、アルミニウムをターゲット材とするアーク放電法やアルミニウム粉をアンモニアと反応させる方法で製造されている。
この出願の発明は、窒化アルミニウムナノチューブの外壁と内壁に炭素膜を成長させた、新規で、オプトエレクトロニクス、電界放出材料などの分野への応用が期待される、外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブとその製造方法を提供することを解決すべき課題としている。 The invention of this application is a new, carbon film grown on the outer and inner walls of aluminum nitride nanotubes, and is expected to be applied to fields such as optoelectronics and field emission materials. The outer and inner walls are covered with a carbon film. It is a problem to be solved to provide an aluminum nitride nanotube and a method for producing the same.
この出願の発明は、上記の課題を解決するものとして、第１には、窒化アルミニウムナノチューブの外壁と内壁がともに炭素膜で覆われ、外径が４５〜５０ナノメートル、炭素膜の厚さが２〜３ナノメートル、壁の厚さが１０〜１５ナノメートルであることを特徴とする外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブを提供する。 In order to solve the above problems, the invention of this application is as follows. First, both the outer wall and the inner wall of the aluminum nitride nanotube are covered with a carbon film, the outer diameter is 45 to 50 nanometers, and the thickness of the carbon film is Provided is an aluminum nitride nanotube having an outer wall and an inner wall covered with a carbon film, wherein the outer wall and the inner wall have a thickness of 2 to 3 nm and a wall thickness of 10 to 15 nm.
この出願の発明は、第２には、アルミナ粉末とカーボンナノチューブの混合物を不活性ガス気流中で加熱した後、不活性ガスをアンモニアガスに切り替えて引き続き加熱することを特徴とする外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法を提供する。 The invention of this application is characterized in that, secondly, an outer wall and an inner wall are characterized in that a mixture of alumina powder and carbon nanotubes is heated in an inert gas stream, and then the inert gas is switched to ammonia gas and subsequently heated. A method for producing an aluminum nitride nanotube covered with a carbon film is provided.
この出願の発明は、第３には、上記第２の外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法において、アルミナ粉末とカーボンナノチューブの重量比が４：１〜３：１の範囲である外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法を提供する。 Thirdly, in the method of manufacturing an aluminum nitride nanotube in which the second outer wall and the inner wall are covered with a carbon film, the weight ratio of the alumina powder to the carbon nanotube is 4: 1 to 3: 1. Provided is a method for producing an aluminum nitride nanotube in which an outer wall and an inner wall which are ranges are covered with a carbon film.
この出願の発明は、第４には、上記第２または第３の外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法において、不活性ガス気流中、1450〜1600℃
の範囲の温度で加熱する窒化アルミニウムナノチューブの製造方法を提供する。
The invention of this application is, fourthly, in the method for producing an aluminum nitride nanotube in which the second or third outer wall and the inner wall are covered with a carbon film, in an inert gas stream, at 1450 to 1600 ° C.
The manufacturing method of the aluminum nitride nanotube heated at the temperature of the range is provided.
この出願の発明は、第５には、上記第４の外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法において、不活性ガス気流中で0.4〜１時間加熱する窒
化アルミニウムナノチューブの製造方法を提供する。
The fifth aspect of the invention of this application is that, in the fourth method for producing an aluminum nitride nanotube in which the outer wall and the inner wall are covered with a carbon film, the aluminum nitride nanotube is heated in an inert gas stream for 0.4 to 1 hour. Provide a method.
この出願の発明は、第６には、上記第２ないし第５のいずれか１つの外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法において、アンモニアガス気流中、1300〜1600℃の範囲の温度で加熱する窒化アルミニウムナノチューブの製造方法を提供する。 The invention of this application is sixthly, in the method for producing an aluminum nitride nanotube in which the outer wall and the inner wall of any one of the second to fifth are covered with a carbon film, in an ammonia gas stream, the temperature is 1300 to 1600 ° C. Provided is a method for producing aluminum nitride nanotubes that is heated at a range of temperatures.
この出願の発明は、第７には、上記第６の外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法において、アンモニアガス気流中で0.5〜1.2時間加熱する窒化アルミニウムナノチューブの製造方法を提供する。 Seventhly, the invention of this application is the method for producing aluminum nitride nanotubes, wherein the sixth outer wall and the inner wall are covered with a carbon film, wherein the aluminum nitride nanotubes are heated in an ammonia gas stream for 0.5 to 1.2 hours. I will provide a.
この出願の発明は、第８には、上記第２ないし第７いずれか１つの外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法において、不活性ガスの流量が８０〜150sccmの範囲である窒化アルミニウムナノチューブの製造方法を提供する。 The invention of this application is, in the eighth aspect, in the method of manufacturing an aluminum nitride nanotube in which the outer wall and the inner wall of any one of the second to seventh are covered with a carbon film, and the flow rate of the inert gas is in the range of 80 to 150 sccm. A method for producing an aluminum nitride nanotube is provided.
この出願の発明は、第９には、上記第２ないし第８いずれか１つの外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法において、アンモニアガスの流量が150〜250sccmの範囲である窒化アルミニウムナノチューブの製造方法を提供する。 The ninth aspect of the invention of this application is the method for producing an aluminum nitride nanotube in which the outer wall and the inner wall of any one of the second to eighth aspects are covered with a carbon film, wherein the flow rate of ammonia gas is in the range of 150 to 250 sccm. A method for producing an aluminum nitride nanotube is provided.
この出願の発明によれば、窒化アルミニウムナノチューブの外壁と内壁に炭素膜を成長させた、新規で、オプトエレクトロニクス、電界放出材料などの分野への応用が期待される、外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブが得られる。 According to the invention of this application, a carbon film is grown on an outer wall and an inner wall of an aluminum nitride nanotube, and the outer wall and the inner wall are carbon films that are expected to be applied to fields such as new optoelectronics and field emission materials. Covered aluminum nitride nanotubes are obtained.
この出願の発明の外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブは、窒化アルミニウムナノチューブの外壁と内壁がともに炭素膜で覆われ、外径が４５〜５０ナノメートル、炭素膜の厚さが２〜３ナノメートル、壁の厚さが１０〜１５ナノメートルのものである。 The aluminum nitride nanotubes whose outer wall and inner wall of the invention of this application are covered with a carbon film are both covered with a carbon film, the outer diameter is 45 to 50 nanometers, and the thickness of the carbon film is It has a thickness of 2 to 3 nanometers and a wall thickness of 10 to 15 nanometers.
この外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブは、アルミナ粉末とカーボンナノチューブの混合物を不活性ガス気流中で加熱した後、不活性ガスをアンモニアガスに切り替えて引き続き加熱することにより製造される。 The aluminum nitride nanotubes whose outer wall and inner wall are covered with a carbon film are manufactured by heating a mixture of alumina powder and carbon nanotubes in an inert gas stream, then switching the inert gas to ammonia gas and continuing heating. The
具体的には、アルミナ粉末とカーボンナノチューブの混合物をグラファイトるつぼに入れ、このグラファイトるつぼを縦型高周波誘導加熱炉の中に配置し、２〜３Torrに減圧した後、アルゴンガスなどの不活性ガスを流しながら、るつぼの内容物を加熱する。この後、不活性ガスをアンモニアガスに切り替え、引き続き加熱する。この一連の加熱により、グラファイトるつぼの内壁には黒色のウール状物質が堆積する。この黒色のウール状物質が、外径４５〜５０ナノメートル、炭素膜の厚さ２〜３ナノメートル、壁の厚さ１０〜１５ナノメートルの外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブである。 Specifically, a mixture of alumina powder and carbon nanotubes is put into a graphite crucible, this graphite crucible is placed in a vertical high frequency induction heating furnace, and the pressure is reduced to 2 to 3 Torr, and then an inert gas such as argon gas is introduced. While flowing, heat the contents of the crucible. After this, the inert gas is switched to ammonia gas and heating is continued. By this series of heating, black wool-like substances are deposited on the inner wall of the graphite crucible. This black wool-like material has an outer diameter of 45 to 50 nanometers, a carbon film thickness of 2 to 3 nanometers, and a wall thickness of 10 to 15 nanometers of aluminum nitride nanotubes whose outer and inner walls are covered with a carbon film. It is.
以上の外壁および内壁が炭素幕で覆われた窒化アルミニウムナノチューブの製造において、この出願の発明では、アルミナ粉末とカーボンナノチューブの重量比は４：１〜３：１の範囲が好ましい。アルミナ粉末が上記範囲より多いと、アルミナ粉末の一部が還元さ
れずに未反応のまま残存することになる。アルミナ粉末が上記範囲より少ないと、未反応の炭素が生成物中に混入する。
In the production of the aluminum nitride nanotubes whose outer wall and inner wall are covered with the carbon screen, the weight ratio of the alumina powder to the carbon nanotubes is preferably in the range of 4: 1 to 3: 1. If the alumina powder is more than the above range, a part of the alumina powder remains unreacted without being reduced. If the alumina powder is less than the above range, unreacted carbon is mixed in the product.
アルゴンガスなどの不活性ガスの流量は、８０〜150sccmの範囲が好ましい。150sccmで十分に不活性雰囲気が保たれる。８０sccm未満では、不活性雰囲気を保持するのに十分ではない。不活性ガス気流中における加熱温度は1450〜1600℃の範囲が好ましい。1600℃で十分にアルミナの還元反応が進行する。1450℃未満では反応が十分に進行しない。不活性ガス気流中での加熱時間は0.4〜１時間の範囲が好ましい。１時間でアルミナの還元反応
は十分に進行する。0.4時間未満の加熱時間では反応が十分に完結しない。
The flow rate of an inert gas such as argon gas is preferably in the range of 80 to 150 sccm. A sufficiently inert atmosphere is maintained at 150 sccm. Below 80 sccm, it is not sufficient to maintain an inert atmosphere. The heating temperature in the inert gas stream is preferably in the range of 1450 to 1600 ° C. The reduction reaction of alumina proceeds sufficiently at 1600 ° C. The reaction does not proceed sufficiently at temperatures below 1450 ° C. The heating time in the inert gas stream is preferably in the range of 0.4 to 1 hour. In 1 hour, the reduction reaction of alumina proceeds sufficiently. If the heating time is less than 0.4 hours, the reaction is not completely completed.
アンモニアガスの流量は150〜250sccmの範囲が好ましい。250sccmを超える流量では、
窒化アルミニウムナノチューブの形成と成長が非平衡状態となり、成長後の窒化アルミニウムナノチューブ中に結晶欠陥を生じる。150sccmより流量が少ないと、アンモニア蒸気
の量が十分でないため窒化アルミニウムナノチューブの形成と成長が十分に行われない。アンモニアガス気流中での加熱温度は1300〜1600℃の範囲が好ましい。1600℃で最終生成物が十分に形成される。1300℃より温度が低いと、窒化アルミニウムの形成のための反応速度および炭素膜で覆われた窒化アルミニウムナノチューブの結晶成長速度が遅くなる。アンモニア気流中での加熱時間は0.5〜1.2時間の範囲が好ましい。1.2時間で最終の複合
ナノチューブの形成と成長が十分に進行する。0.5時間未満では複合ナノチューブの成長
が完結しない。
The flow rate of ammonia gas is preferably in the range of 150 to 250 sccm. For flow rates over 250sccm,
Formation and growth of the aluminum nitride nanotubes are in a non-equilibrium state, and crystal defects are generated in the grown aluminum nitride nanotubes. If the flow rate is lower than 150 sccm, the amount of ammonia vapor is not sufficient, so that formation and growth of aluminum nitride nanotubes are not performed sufficiently. The heating temperature in the ammonia gas stream is preferably in the range of 1300 to 1600 ° C. The final product is fully formed at 1600 ° C. When the temperature is lower than 1300 ° C., the reaction rate for forming aluminum nitride and the crystal growth rate of the aluminum nitride nanotubes covered with the carbon film become slow. The heating time in the ammonia stream is preferably in the range of 0.5 to 1.2 hours. The formation and growth of the final composite nanotube proceeds sufficiently in 1.2 hours. In less than 0.5 hour, the growth of the composite nanotube is not completed.
和光純薬工業（株）製のアルミナ粉末（純度99.9%）３ｇと既知の方法（Cheng C.Tang,et al.;Carbon， 2002年，第４０巻、ｐ．2497〜2502に記載）で作製したカーボンナノチューブ（長さ数マイクロメートル、直径４０〜５５ナノメートル）0.5ｇの混合物をグラ
ファイトるつぼに入れた。このグラファイトるつぼを縦型高周波誘導加熱炉の中央部に配置し、縦型高周波誘導加熱炉の内部を２〜３Torrに減圧した後、アルゴンガスを100sccm
の流量で流しながらるつぼの内容物を1600℃に1時間加熱した。その後、アルゴンガスを
アンモニアガスに切り替え、流量200sccmで流しながら1600℃に1時間加熱した。グラファイトるつぼの内壁に黒色のウール状物質が0.4ｇ堆積した。
Wako Pure Chemical Industries, Ltd. 3g alumina powder (purity 99.9%) and known method (Cheng C. Tang, et al .; Carbon, 2002, Vol. 40, p. 2497 to 2502) A mixture of 0.5 g of the carbon nanotubes (a few micrometers long, 40-55 nanometers in diameter) was placed in a graphite crucible. This graphite crucible is placed in the center of the vertical high frequency induction heating furnace, the inside of the vertical high frequency induction heating furnace is depressurized to 2-3 Torr, and then argon gas is added at 100 sccm.
The contents of the crucible were heated to 1600 ° C. for 1 hour while flowing at a flow rate of. Thereafter, the argon gas was switched to ammonia gas and heated to 1600 ° C. for 1 hour while flowing at a flow rate of 200 sccm. 0.4 g of a black wool-like substance was deposited on the inner wall of the graphite crucible.
図１に、黒色堆積物のＸ線回折のパターンを示した。黒色堆積物は、格子定数がａ＝3.114Å、ｃ＝4.986Åである六方晶系の窒化アルミニウムであることが確認された。 FIG. 1 shows the X-ray diffraction pattern of the black deposit. The black deposit was confirmed to be hexagonal aluminum nitride having lattice constants a = 3.114 Å and c = 4.986 Å.
図２に、黒色堆積物の低倍率透過型電子顕微鏡像の写真を示した。長さ数マイクロメートル以上で、外径４５〜５０ナノメートル、壁の厚さ１３ナノメートルのナノチューブが形成されているのが分かる。 FIG. 2 shows a photograph of a low magnification transmission electron microscope image of the black deposit. It can be seen that nanotubes having a length of several micrometers or more, an outer diameter of 45 to 50 nanometers, and a wall thickness of 13 nanometers are formed.
図３に、黒色堆積物の高分解能透過型電子顕微鏡像の写真を示した。この写真からチューブの外壁と内壁に２〜３ナノメートルの薄い層が形成されていることが分かる。 FIG. 3 shows a photograph of a high-resolution transmission electron microscope image of the black deposit. It can be seen from this photograph that a thin layer of 2 to 3 nanometers is formed on the outer wall and the inner wall of the tube.
図４に、黒色堆積物のＸ線エネルギー拡散スペクトルを示した。化学組成は、アルミニウム48.1atom％、窒素46.3atom％、炭素4.6atom％、酸素１atom％であった。アルミニウ
ムと窒素の原子比は１：0.97であり、化学量論組成の窒化アルミニウムであることが確認された。検出された4.6atom％の炭素が、ナノチューブの外壁と内壁の薄い膜の層に相当
する。
FIG. 4 shows the X-ray energy diffusion spectrum of the black deposit. The chemical composition was 48.1 atom% aluminum, 46.3 atom% nitrogen, 4.6 atom% carbon, and 1 atom% oxygen. The atomic ratio of aluminum to nitrogen was 1: 0.97, confirming that the aluminum nitride had a stoichiometric composition. The detected 4.6 atom% of carbon corresponds to a thin film layer on the outer wall and inner wall of the nanotube.
図５に、励起光源として325nmのＨｅ−Ｃｄレーザーを用いて測定した黒色堆積物の室
温におけるフォトルミネッセンススペクトルを示した。350nmから550nmまでの発光バンドを有し、中心バンドが412nmである青色発光を示す。
FIG. 5 shows a photoluminescence spectrum of a black deposit measured at room temperature using a 325 nm He—Cd laser as an excitation light source. Blue light emission having an emission band from 350 nm to 550 nm and a central band of 412 nm is exhibited.
以上詳しく説明したとおり、この出願の発明によって、新規な外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブが実現され、このナノチューブは、オプトエレクトロニクス、電界放出材料などの分野への応用が期待される。 As described in detail above, the invention of this application has realized a novel aluminum nitride nanotube whose outer wall and inner wall are covered with a carbon film. This nanotube is expected to be applied to fields such as optoelectronics and field emission materials. The
Claims (9)
われた窒化アルミニウムナノチューブの製造方法。 The manufacturing method of the aluminum nitride nanotube by which the outer wall and inner wall were covered with the carbon film of Claim 4 heated for 0.4 to 1 hour in inert gas stream.
の外壁および内壁が炭素膜で覆われた窒化アルミニウムナノチューブの製造方法。 The method for producing aluminum nitride nanotubes, wherein the outer wall and the inner wall are covered with a carbon film according to any one of claims 2 to 7, wherein the flow rate of the inert gas is in the range of 80 to 150 sccm.
The method for producing aluminum nitride nanotubes, wherein the outer wall and the inner wall are covered with a carbon film according to any one of claims 2 to 8, wherein the flow rate of ammonia gas is in the range of 150 to 250 sccm.
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Cited By (5)
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|---|---|---|---|---|
| JP2009280497A (en) * | 2009-08-26 | 2009-12-03 | National Institute For Materials Science | Aluminum nitride nanoribbon |
| JP2012041255A (en) * | 2010-08-23 | 2012-03-01 | Tohoku Univ | Aluminum nitride particle, method for producing the same, and apparatus for producing aluminum nitride particle |
| JP2012041253A (en) * | 2010-08-23 | 2012-03-01 | Tohoku Univ | Aluminum nitride-based particle, method for producing the same, and apparatus for producing aluminum nitride-based particle |
| JP2012041254A (en) * | 2010-08-23 | 2012-03-01 | Tohoku Univ | Aluminum nitride wire, method for producing the same, and apparatus for producing aluminum nitride wire |
| CN101580224B (en) * | 2009-06-01 | 2012-09-05 | 南京大学 | Patterning preparation method for nano array |
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| JPH06191807A (en) * | 1992-12-28 | 1994-07-12 | Tokuyama Soda Co Ltd | Production of aluminum nitride powder |
| JP2002097004A (en) * | 2000-09-21 | 2002-04-02 | National Institute For Materials Science | Method for producing boron nitride nanotubes using oxide catalyst |
| WO2004007353A2 (en) * | 2002-07-17 | 2004-01-22 | Hitco Carbon Composites, Inc. | Continuous chemical vapor deposition process and process furnace |
| JP2004250281A (en) * | 2003-02-19 | 2004-09-09 | National Institute Of Advanced Industrial & Technology | Method for producing water-resistant aluminum nitride powder coated with carbonaceous film |
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|---|---|---|---|---|
| JPH06191807A (en) * | 1992-12-28 | 1994-07-12 | Tokuyama Soda Co Ltd | Production of aluminum nitride powder |
| JP2002097004A (en) * | 2000-09-21 | 2002-04-02 | National Institute For Materials Science | Method for producing boron nitride nanotubes using oxide catalyst |
| WO2004007353A2 (en) * | 2002-07-17 | 2004-01-22 | Hitco Carbon Composites, Inc. | Continuous chemical vapor deposition process and process furnace |
| JP2004250281A (en) * | 2003-02-19 | 2004-09-09 | National Institute Of Advanced Industrial & Technology | Method for producing water-resistant aluminum nitride powder coated with carbonaceous film |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101580224B (en) * | 2009-06-01 | 2012-09-05 | 南京大学 | Patterning preparation method for nano array |
| JP2009280497A (en) * | 2009-08-26 | 2009-12-03 | National Institute For Materials Science | Aluminum nitride nanoribbon |
| JP2012041255A (en) * | 2010-08-23 | 2012-03-01 | Tohoku Univ | Aluminum nitride particle, method for producing the same, and apparatus for producing aluminum nitride particle |
| JP2012041253A (en) * | 2010-08-23 | 2012-03-01 | Tohoku Univ | Aluminum nitride-based particle, method for producing the same, and apparatus for producing aluminum nitride-based particle |
| JP2012041254A (en) * | 2010-08-23 | 2012-03-01 | Tohoku Univ | Aluminum nitride wire, method for producing the same, and apparatus for producing aluminum nitride wire |
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