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JP2005340719A - Stage mechanism - Google Patents

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JP2005340719A
JP2005340719A JP2004160887A JP2004160887A JP2005340719A JP 2005340719 A JP2005340719 A JP 2005340719A JP 2004160887 A JP2004160887 A JP 2004160887A JP 2004160887 A JP2004160887 A JP 2004160887A JP 2005340719 A JP2005340719 A JP 2005340719A
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heat
thermoelectric element
cooling
heating
sample
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Taichi Fujita
太一 藤田
Kiyotaka Chiba
清隆 千葉
Fumio Mase
文雄 間瀬
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Tokyo Seimitsu Co Ltd
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Tokyo Seimitsu Co Ltd
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  • Electron Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

【課題】 ステージ自体の位置制御性に悪影響を与えず、かつ試料の温度制御性が高く、さらに試料近傍を非磁性に保つことが可能なステージ機構を提供することを目的とする。
【解決手段】 温調用熱電素子51、52を使用してステージ46に温調用流体を導く配管を避けつつ温度制御性を高め、かつこの熱電素子51、52を試料40から離して配置して試料40近傍を非磁性に保ち、その間に熱輸送手段53、54を介在させる。
【選択図】 図3
PROBLEM TO BE SOLVED: To provide a stage mechanism that does not adversely affect the position controllability of a stage itself, has high temperature controllability of a sample, and can keep the vicinity of the sample nonmagnetic.
SOLUTION: The temperature controllability is improved while avoiding piping for guiding the temperature adjusting fluid to the stage 46 by using the temperature adjusting thermoelectric elements 51, 52, and the thermoelectric elements 51, 52 are arranged away from the sample 40 and the sample is arranged. The vicinity of 40 is kept non-magnetic, and the heat transport means 53 and 54 are interposed therebetween.
[Selection] Figure 3

Description

本発明は、試料を保持しつつ移動可能なステージ機構に関し、特に本発明は、荷電粒子線装置や、半導体集積回路などの製造工程で使用され、電子線源により発生させた電子ビームを偏向し、露光パターンに対応するマスクパターンを有するマスク上で走査させて露光パターンをウエハに露光する電子線露光装置において、ウエハ及びマスクを保持するステージ機構に関する。   The present invention relates to a stage mechanism that can move while holding a sample. In particular, the present invention is used in a manufacturing process of a charged particle beam apparatus, a semiconductor integrated circuit, or the like, and deflects an electron beam generated by an electron beam source. The present invention relates to a stage mechanism for holding a wafer and a mask in an electron beam exposure apparatus that scans a mask having a mask pattern corresponding to the exposure pattern to expose the exposure pattern onto the wafer.

近年、半導体集積回路の高集積化のニーズに伴い、回路パターンの一層の微細化が要望されている。現在、微細化の限界を規定しているのは主として露光装置であり、電子ビーム直接描画装置やX線露光装置などの新しい方式の露光装置が開発されている。   In recent years, with the need for higher integration of semiconductor integrated circuits, further miniaturization of circuit patterns has been demanded. At present, the limits of miniaturization are mainly limited to exposure apparatuses, and new exposure apparatuses such as an electron beam direct writing apparatus and an X-ray exposure apparatus have been developed.

最近では新しい方式の露光装置として、量産レベルで超微細加工用に使用可能な電子線近接露光装置が開示されている(例えば特許文献1、およびこれに対応する日本国特許出願の特許文献2)。   Recently, an electron beam proximity exposure apparatus that can be used for ultrafine processing at a mass production level has been disclosed as a new type of exposure apparatus (for example, Patent Document 1 and Patent Document 2 corresponding to Japanese Patent Application). .

図1は、特許文献1に開示された電子線近接露光装置の基本構成を示す図である。この図を参照して、電子線近接露光装置について説明する。図示するように、電子線近接露光装置1は、その内部が高い真空状態に保たれた電子光学鏡筒(カラム)10と試料室(チャンバ)8とを備える。
そして、カラム10内には、電子ビーム15を発生する電子線源14と整形アパチャ18と電子ビーム15を平行ビームにする照射レンズ16とを有する電子銃12、対となる主偏向器21、22と、対となる副偏向器51、52とを含み、電子ビームを光軸に平行に走査する走査手段13が備えられる。
一方、チャンバ8内には、露光するパターンに対応する開口を有するマスク30を保持するマスクホルダ34と、マスクホルダ34を少なくともXY方向に移動可能なマスクステージ36と、静電チャック44と、XYステージ46とが備えられる。試料(半導体ウエハ)40は、表面にレジスト層42が形成され、静電チャック44上に保持されている。
FIG. 1 is a diagram showing a basic configuration of an electron beam proximity exposure apparatus disclosed in Patent Document 1. As shown in FIG. The electron beam proximity exposure apparatus will be described with reference to this figure. As shown in the figure, the electron beam proximity exposure apparatus 1 includes an electron optical column (column) 10 and a sample chamber (chamber) 8 whose interior is kept in a high vacuum state.
In the column 10, an electron gun 12 having an electron beam source 14 that generates an electron beam 15, a shaping aperture 18, and an irradiation lens 16 that makes the electron beam 15 a parallel beam, a pair of main deflectors 21 and 22. And scanning means 13 for scanning the electron beam parallel to the optical axis.
On the other hand, in the chamber 8, a mask holder 34 for holding a mask 30 having an opening corresponding to a pattern to be exposed, a mask stage 36 capable of moving the mask holder 34 at least in the XY direction, an electrostatic chuck 44, and XY Stage 46 is provided. A sample (semiconductor wafer) 40 has a resist layer 42 formed on the surface thereof and is held on an electrostatic chuck 44.

マスク30は、厚い外縁部の中央部に、開口が形成された薄膜部を有しており、試料40は表面がマスク30に近接するように配置される。この状態で、マスクに垂直に電子ビーム15を照射すると、マスクの開口を通過した電子ビーム15が試料40の表面のレジスト層42に照射される。   The mask 30 has a thin film portion in which an opening is formed at the center portion of the thick outer edge portion, and the sample 40 is disposed so that the surface is close to the mask 30. In this state, when the electron beam 15 is irradiated perpendicularly to the mask, the electron beam 15 that has passed through the opening of the mask is irradiated onto the resist layer 42 on the surface of the sample 40.

走査手段13に含まれる主偏向器21及び22は、電子ビーム15を、その光軸を電子銃12の光軸19に平行に保ったままマスク30の薄膜部32全面で走査するように偏向制御する。このように電子ビーム15が薄膜部を全面走査することよりマスク30のマスクパターンが試料40上のレジスト層42に等倍転写される。   The main deflectors 21 and 22 included in the scanning unit 13 control the deflection of the electron beam 15 so as to scan the entire surface of the thin film portion 32 of the mask 30 while keeping the optical axis thereof parallel to the optical axis 19 of the electron gun 12. To do. Thus, the electron beam 15 scans the entire surface of the thin film portion, whereby the mask pattern of the mask 30 is transferred to the resist layer 42 on the sample 40 at the same magnification.

XYステージ46は、載置する試料40を水平の直交2軸方向(XY方向)に移動させるもので、マスクパターンの等倍転写が終了する毎に試料40を所定量移動させ、これにより1枚の試料40に複数のマスクパターンを転写できるようにしている。なおXYステージ46は、垂直方向(Z方向)を回転軸にして、試料40を回転させることも可能である。   The XY stage 46 moves the sample 40 to be placed in the horizontal orthogonal two-axis direction (XY direction), and moves the sample 40 by a predetermined amount each time when the mask pattern is transferred at the same magnification. A plurality of mask patterns can be transferred to the sample 40. The XY stage 46 can also rotate the sample 40 with the vertical direction (Z direction) as a rotation axis.

走査手段13に含まれる副偏向器51、52は、マスク歪みを補正するように電子ビームのマスクパターンへの入射角度を制御(傾き補正)する。いま電子ビーム15のマスク30への入射角度をα、露光用のマスク30と試料40とのギャップをGとすると、入射角度αによるマスクパターンの転写位置のずれ量δは、次式、
δ=G・tanα
で表され、マスクパターンは、ずれ量δだけ正規の位置からずれた位置に転写される。したがって、露光用のマスク30にマスク歪みがあっても、電子ビーム走査位置におけるマスク歪みに応じて電子ビームの傾き制御を行うことにより、このマスク歪みを補正することが可能である。
The sub deflectors 51 and 52 included in the scanning unit 13 control (tilt correction) the incident angle of the electron beam to the mask pattern so as to correct the mask distortion. Assuming that the incident angle of the electron beam 15 to the mask 30 is α and the gap between the exposure mask 30 and the sample 40 is G, the shift amount δ of the transfer position of the mask pattern due to the incident angle α is expressed by the following equation:
δ = G ・ tanα
The mask pattern is transferred to a position shifted from the normal position by a shift amount δ. Therefore, even if the exposure mask 30 has a mask distortion, the mask distortion can be corrected by controlling the tilt of the electron beam in accordance with the mask distortion at the electron beam scanning position.

さて、マスク30及び試料40は、その転写倍率を一定に(例えば電子線近接露光装置では等倍に)保つために、マスク30及び試料40の熱伸縮によるサイズ変動を抑制する必要がある。しかし、マスク30及び試料40は絶えず電子ビーム15が照射されているため徐々に温度が上昇する傾向にあり、このため上記電子線近接露光装置のような電子線露光装置では、マスク30及び試料40の温度調整を行うための温調手段を設ける必要がある。   Now, in order to keep the transfer magnification of the mask 30 and the sample 40 constant (for example, the same magnification in the electron beam proximity exposure apparatus), it is necessary to suppress size variation due to thermal expansion and contraction of the mask 30 and the sample 40. However, since the mask 30 and the sample 40 are constantly irradiated with the electron beam 15, the temperature tends to gradually increase. For this reason, in an electron beam exposure apparatus such as the electron beam proximity exposure apparatus, the mask 30 and the sample 40. It is necessary to provide temperature control means for adjusting the temperature of the temperature.

このような試料(ウエハ)の温度を調整する手段としては、従来、下記特許文献3のようにウエハを支持するステージに冷却水を循環させるための導水管を設ける構造が知られている。また、下記特許文献4には、ウエハを支持するチャックを冷却するための輻射熱板を設ける構造が開示されている。   As a means for adjusting the temperature of such a sample (wafer), there is conventionally known a structure in which a water guide pipe for circulating cooling water is provided on a stage that supports a wafer as in Patent Document 3 below. Patent Document 4 below discloses a structure in which a radiant heat plate is provided for cooling a chuck that supports a wafer.

米国特許第5,831,272号明細書(全体)US Pat. No. 5,831,272 (Overall) 日本特許第2951947号公報(全体)Japanese Patent No. 2951947 (Overall) 特開平11-233598号公報(全体)JP 11-233598 A (Overall) 特開2003-229347号公報(全体)JP 2003-229347 A (Overall)

しかし、特許文献3に示すような導水管構造を上記マスクホルダ34やXYステージ46に設けると、配管のためにステージの制御性を悪化させる。特にXYステージ46のようにその移動範囲が広い場合にはステージまで冷却水を供給することが難しい。   However, if a conduit structure as shown in Patent Document 3 is provided in the mask holder 34 or the XY stage 46, the controllability of the stage is deteriorated due to the piping. In particular, when the movement range is wide like the XY stage 46, it is difficult to supply cooling water to the stage.

かかる配管を避けるためにペルチェ素子などの熱電素子を試料40近傍に配置する方法も考えられる。しかし、上記電子線近接露光装置のような荷電粒子線装置では、通電電流による荷電粒子線の軌道への影響を防ぐために試料近傍が非磁性であることが要求されるため、ペルチェ素子などの通電電流が大きい素子を試料40近傍に配置することも困難である。   In order to avoid such piping, a method of arranging a thermoelectric element such as a Peltier element in the vicinity of the sample 40 is also conceivable. However, in a charged particle beam apparatus such as the above-mentioned electron beam proximity exposure apparatus, the vicinity of the sample is required to be nonmagnetic in order to prevent the charged current from affecting the trajectory of the charged particle beam. It is also difficult to arrange an element having a large current near the sample 40.

また、特許文献4に示すようにチャック44と非接触に設けられた輻射板によりチャック44の温度調整を行う構造では、チャック44に温調素子を接触させる場合と比較して温度制御性が低い。   Further, as shown in Patent Document 4, in the structure in which the temperature of the chuck 44 is adjusted by a radiation plate provided in non-contact with the chuck 44, the temperature controllability is low as compared with the case where the temperature adjusting element is brought into contact with the chuck 44. .

上記問題点を鑑みて本発明は、ステージ自体の位置制御性に悪影響を与えず、かつ試料の温度制御性が高く、さらに試料近傍を非磁性に保つことが可能なステージ機構を提供することを目的とする。   In view of the above problems, the present invention provides a stage mechanism that does not adversely affect the position controllability of the stage itself, has high temperature controllability of the sample, and can keep the vicinity of the sample nonmagnetic. Objective.

上記目的を達成するため、本発明では、温調用流体を導く配管を避けつつ温度制御性を高めるために温調用熱電素子を使用し、かつ試料近傍を非磁性に保つために、この熱電素子を試料から離して配置し、その間に熱輸送手段を介在させることとした。   In order to achieve the above object, in the present invention, a thermoelectric element for temperature adjustment is used in order to improve temperature controllability while avoiding a pipe for guiding a temperature adjustment fluid, and in order to keep the vicinity of the sample nonmagnetic, this thermoelectric element is used. They were placed away from the sample, and a heat transport means was interposed between them.

すなわち、本発明に係るステージ機構は、可動台部と、可動台部に設けられる試料保持部と、試料保持部と離隔して、可動台部に設けられる加熱用熱電素子及び冷却用熱電素子と、加熱用熱電素子と試料保持部との間で熱輸送を行う加熱用熱輸送手段と、冷却用熱電素子と試料保持部との間で熱輸送を行う冷却用熱輸送手段とを備える。   That is, the stage mechanism according to the present invention includes a movable table, a sample holder provided in the movable table, a heating thermoelectric element and a cooling thermoelectric element provided in the movable table apart from the sample holder. A heating heat transporting means for transporting heat between the heating thermoelectric element and the sample holding part, and a cooling heat transporting means for transporting heat between the cooling thermoelectric element and the sample holding part.

試料近傍をさらに非磁性に保つため、熱輸送手段は非磁性材料で構成されることが好適である。また、温度制御性を高めるため、ステージ機構は試料保持部及び/又は熱輸送手段に設けられる温度センサと、温度センサによる検知温度に基づき加熱用熱電素子及び/又は冷却用熱電素子の駆動信号を出力して、試料保持部に保持された試料を所定温度に保つ熱電素子制御部と、を備えることとしてよい。
このとき、熱電素子制御部は、冷却用熱電素子を一定信号で駆動しつつ、加熱用熱電素子を温度センサによる検知温度に基づき駆動することとしてよい。試料の温度調整は冷却する場合より加熱する場合の方が比較的迅速に行うことが可能であるため、このような制御により温度制御性をさらに高めることが可能である。もちろん熱電素子制御部は、前記熱電素子制御部は、加熱用熱電素子を一定信号で駆動しつつ、冷却用熱電素子を温度センサによる検知温度に基づき駆動することとしてもよい。
In order to keep the vicinity of the sample more non-magnetic, it is preferable that the heat transport means is made of a non-magnetic material. In order to improve temperature controllability, the stage mechanism provides a temperature sensor provided in the sample holder and / or heat transport means and a driving signal for the heating thermoelectric element and / or the cooling thermoelectric element based on the temperature detected by the temperature sensor. A thermoelectric element control unit that outputs and maintains the sample held in the sample holding unit at a predetermined temperature.
At this time, the thermoelectric element control unit may drive the heating thermoelectric element based on the temperature detected by the temperature sensor while driving the cooling thermoelectric element with a constant signal. Since the temperature of the sample can be adjusted relatively quickly when it is heated, the temperature controllability can be further enhanced by such control. Of course, the thermoelectric element control unit may drive the thermoelectric element for cooling based on the temperature detected by the temperature sensor while driving the thermoelectric element for heating with a constant signal.

加熱用熱電素子と冷却用熱電素子とは、それぞれ熱交換素子により構成され、加熱用熱輸送手段は、加熱用熱電素子としての熱交換素子の発熱部と試料保持部との間の熱輸送を行い、冷却用熱輸送手段は、冷却用熱電素子としての熱交換素子の受熱部と試料保持部との間の熱輸送を行い、加熱用熱電素子としての熱交換素子の受熱部と冷却用熱電素子としての熱交換素子の発熱部とは、可動台を介して熱交換を行うこととすることが好適である。   The heating thermoelectric element and the cooling thermoelectric element are each constituted by a heat exchange element, and the heating heat transporting means transports heat between the heat generating element of the heat exchange element as the heating thermoelectric element and the sample holding part. The cooling heat transport means transports heat between the heat receiving part of the heat exchange element as the cooling thermoelectric element and the sample holding part, and receives the heat receiving part of the heat exchange element as the heating thermoelectric element and the cooling thermoelectric element. It is preferable to exchange heat with the heat generating part of the heat exchange element as an element via a movable base.

本発明に係るステージ機構により、温調用流体を導く配管を避けてステージ位置の制御性を高め、かつ温度制御性を高め、また試料近傍を非磁性に保つことが可能となる。
さらに、熱輸送手段を非磁性材料で構成することにより試料近傍をさらに非磁性に保つことが可能となる。
常に一定の制御信号で駆動される冷却用熱電素子により試料を冷却しつつ、加熱用熱電素子により温度調整することにより、温度制御性をさらに高めることが可能となる。
With the stage mechanism according to the present invention, it is possible to improve the controllability of the stage position by avoiding the pipe for guiding the temperature adjusting fluid, to improve the temperature controllability, and to keep the vicinity of the sample nonmagnetic.
Furthermore, the vicinity of the sample can be further kept nonmagnetic by configuring the heat transporting means with a nonmagnetic material.
The temperature controllability can be further improved by adjusting the temperature with the heating thermoelectric element while cooling the sample with the cooling thermoelectric element driven by a constant control signal at all times.

加熱用熱電素子としての熱交換素子の受熱部と冷却用熱電素子としての熱交換素子の発熱部とが可動台を介して熱交換を行うことにより、系全体の発熱量を減少させて発熱処理を最小限に抑えることが可能となる。   The heat receiving part of the heat exchange element as the thermoelectric element for heating and the heat generating part of the heat exchange element as the thermoelectric element for cooling exchange heat through the movable base, thereby reducing the heat generation amount of the entire system and generating heat. Can be minimized.

以下、図面を参照して本発明の実施形態を説明する。図2は、本発明の実施例に係るステージ機構の概略構成図である。以下の説明では、例示としてステージ機構2を図1に示した電子線近接露光装置1に適用した場合について説明するが、本発明に係るステージ機構は、電子線露光装置、電子顕微鏡、電子線検査装置などの種々の荷電粒子線装置に好適に利用することが可能である。
電子線近接露光装置自体については既に説明したため、説明を省略することとし、図1と同一の機能部分には同一の参照番号を用いて表す。
Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 2 is a schematic configuration diagram of a stage mechanism according to the embodiment of the present invention. In the following description, the case where the stage mechanism 2 is applied to the electron beam proximity exposure apparatus 1 shown in FIG. 1 will be described as an example, but the stage mechanism according to the present invention includes an electron beam exposure apparatus, an electron microscope, and an electron beam inspection. It can be suitably used for various charged particle beam devices such as devices.
Since the electron beam proximity exposure apparatus itself has already been described, the description thereof will be omitted, and the same functional parts as those in FIG. 1 are denoted by the same reference numerals.

ステージ機構2は、試料保持部としての静電チャック44を少なくともX及びYの2軸方向に移動可能な粗動ステージ48と微動ステージ47とからなるXYステージ46を備える。
微動ステージ47上には、加熱用熱電素子としての熱交換素子である複数の加熱用ペルチェ素子51と、冷却用熱電素子としての熱交換素子である複数の冷却用ペルチェ素子52とが設けられており、加熱用ペルチェ素子51と冷却用ペルチェ素子52は、通電電流により発生する磁界が静電チャック44上の試料40に照射される電子ビームの軌道に影響を与えないように、静電チャック44から離して設けられる。
The stage mechanism 2 includes an XY stage 46 including a coarse movement stage 48 and a fine movement stage 47 that can move an electrostatic chuck 44 as a sample holder in at least two X and Y axial directions.
On fine movement stage 47, a plurality of heating Peltier elements 51, which are heat exchange elements as heating thermoelectric elements, and a plurality of cooling Peltier elements 52, which are heat exchange elements as cooling thermoelectric elements, are provided. The heating Peltier element 51 and the cooling Peltier element 52 are arranged so that the magnetic field generated by the energizing current does not affect the trajectory of the electron beam applied to the sample 40 on the electrostatic chuck 44. It is provided away from.

各加熱用ペルチェ素子51の発熱部に発生した熱は、各加熱用ペルチェ素子51に対してそれぞれ設けられた複数の加熱用熱輸送手段53により静電チャック44に運ばれ、反対に静電チャック44上の熱は、各冷却用ペルチェ素子52に対してそれぞれ設けられた複数の冷却用熱輸送手段54により冷却用ペルチェ素子52の冷却部(受熱部)に運ばれる。加熱用熱輸送手段53及び冷却用熱輸送手段54は、ヒートパイプやヒートレーン(登録商標)などの熱輸送手段により実現してよい。一方、加熱用ペルチェ素子51の冷却部と冷却用ペルチェ素子52の発熱部は、それぞれ熱容量の大きい微動ステージ47のブロックに接触して設けられ、微動ステージ47のブロックを介して熱交換を行う。また、試料40に照射する電子ビーム軌道に影響を与えないように、加熱用熱輸送手段53及び冷却用熱輸送手段54は非磁性材料からなることが好適である。   The heat generated in the heat generating portion of each heating Peltier element 51 is conveyed to the electrostatic chuck 44 by a plurality of heating heat transporting means 53 provided for each heating Peltier element 51, and on the contrary, the electrostatic chuck The heat on 44 is conveyed to the cooling part (heat receiving part) of the cooling Peltier element 52 by a plurality of cooling heat transporting means 54 provided for each cooling Peltier element 52. The heat transport means 53 for heating and the heat transport means 54 for cooling may be realized by a heat transport means such as a heat pipe or a heat lane (registered trademark). On the other hand, the cooling part of the heating Peltier element 51 and the heat generating part of the cooling Peltier element 52 are provided in contact with the block of the fine movement stage 47 having a large heat capacity, and perform heat exchange via the block of the fine movement stage 47. Further, it is preferable that the heating heat transporting means 53 and the cooling heat transporting means 54 are made of a nonmagnetic material so as not to affect the electron beam trajectory with which the sample 40 is irradiated.

加熱用熱輸送手段53及び冷却用熱輸送手段54は、静電チャック44下方に設けられた温調部55内に試料40面に沿ってレイアウトされる。図2では、加熱用熱輸送手段53及び冷却用熱輸送手段54は上下にレイアウトされているが、例えば図3に例示するように、温調部55の径方向に延伸する各加熱用熱輸送手段53a〜53h及び冷却用熱輸送手段54a〜54hと、各加熱用ペルチェ素子51a〜51h及び各冷却用ペルチェ素子52a〜52hを、温調部55の周方向にステージ46平面上で位置をずらして同一平面上に交互に配置することとしてもよい。温調部55は断熱支持部材49を介して微動ステージ47上に設けられ、微動ステージ47のブロックと温調板55との間の熱流束は遮断される。   The heating heat transporting means 53 and the cooling heat transporting means 54 are laid out along the surface of the sample 40 in a temperature control unit 55 provided below the electrostatic chuck 44. In FIG. 2, the heat transport means 53 for heating and the heat transport means 54 for cooling are laid out vertically, but for example, as illustrated in FIG. 3, each heat heat transport for heating extending in the radial direction of the temperature control portion 55. The positions of the means 53a to 53h and the cooling heat transporting means 54a to 54h, the heating Peltier elements 51a to 51h, and the cooling Peltier elements 52a to 52h are shifted on the stage 46 plane in the circumferential direction of the temperature control section 55. Alternatively, they may be arranged alternately on the same plane. The temperature adjustment unit 55 is provided on the fine movement stage 47 via the heat insulating support member 49, and the heat flux between the block of the fine movement stage 47 and the temperature adjustment plate 55 is blocked.

温調部55と静電チャック44の間には、熱抵抗の小さい材料で構成される及び/又は熱抵抗の小さい構造に構成される均熱板45が設けられる。均熱板45は、温調部55上の不均一な熱を均一にして静電チャック44及びこれを介して試料40に伝える。これに加えて又はこれに代えて、静電チャック44を熱抵抗の小さい材料で構成し及び/又は熱抵抗の小さい構造に構成してもよい。   Between the temperature control unit 55 and the electrostatic chuck 44, a heat equalizing plate 45 is provided which is made of a material having a low thermal resistance and / or a structure having a low thermal resistance. The heat equalizing plate 45 makes the non-uniform heat on the temperature control unit 55 uniform and transmits it to the electrostatic chuck 44 and the sample 40 through this. In addition to or instead of this, the electrostatic chuck 44 may be made of a material having a low thermal resistance and / or a structure having a low thermal resistance.

また図示するように、静電チャック44には温度センサ61a、61bが、均熱板45には温度センサ61cが、各加熱用熱輸送手段53の近傍には温度センサ61dが、各冷却用熱輸送手段54の近傍には温度センサ61eが、微動ステージ47下面付近には温度センサ61fが設けられており、ステージ機構2は、温度センサ61a〜61eが検出した各部分の温度に基づいて、加熱用ペルチェ素子51及び冷却用ペルチェ素子52への通電電流を制御して出力する熱電素子制御部70を備える。   As shown in the figure, temperature sensors 61a and 61b are provided for the electrostatic chuck 44, a temperature sensor 61c is provided for the soaking plate 45, and a temperature sensor 61d is provided for each cooling heat transport means 53 in the vicinity of each heat for cooling. A temperature sensor 61e is provided in the vicinity of the transport means 54, and a temperature sensor 61f is provided in the vicinity of the lower surface of the fine movement stage 47. The stage mechanism 2 performs heating based on the temperature of each part detected by the temperature sensors 61a to 61e. The thermoelectric element control part 70 which controls and outputs the electric current to the Peltier element 51 for cooling and the Peltier element 52 for cooling is provided.

熱電素子制御部70による加熱用ペルチェ素子51及び冷却用ペルチェ素子52の制御は、冷却用ペルチェ素子52を一定の出力電流で駆動する一方で、静電チャック44に設けられた61a、61b及び/又は均熱板45に設けられた温度センサ温度センサ61cによる検知温度が予め設定された設定温度となるように、加熱用ペルチェ素子51への出力電流を可変制御することにより行うこととしてよい。一般に、温度調整は冷却する場合より加熱する場合の方が比較的迅速に行うことが可能であるため、このような制御により温度制御性の向上に資する。   The control of the heating Peltier element 51 and the cooling Peltier element 52 by the thermoelectric element control unit 70 drives the cooling Peltier element 52 with a constant output current, while 61a, 61b and / or 61 provided in the electrostatic chuck 44 Alternatively, it may be performed by variably controlling the output current to the heating Peltier element 51 so that the temperature detected by the temperature sensor 61c provided on the soaking plate 45 becomes a preset temperature. In general, temperature adjustment can be performed relatively quickly in the case of heating rather than in the case of cooling, and thus such control contributes to the improvement of temperature controllability.

各温度センサ61a〜61eにより、静電チャック44、均熱板45及び温調部55に、試料面に沿った温度分布の不均一が検出された場合には、熱電素子制御部70は、図3に示すようにステージ46平面上で位置をずらして配置された、各加熱用熱輸送手段53a〜53hの加熱端を加熱する各加熱用ペルチェ素子51a〜51hと、各冷却用熱輸送手段54a〜54hの冷却端を冷却する各冷却用ペルチェ素子52a〜52hとを個別に制御して、温度分布の不均一が解消されるようにゾーンコントロールすることとしてもよい。   If the temperature sensors 61a to 61e detect non-uniform temperature distribution along the sample surface in the electrostatic chuck 44, the heat equalizing plate 45, and the temperature control unit 55, the thermoelectric element control unit 70 3, the heating Peltier elements 51 a to 51 h for heating the heating ends of the heating heat transporting means 53 a to 53 h, which are arranged at different positions on the plane of the stage 46, and the cooling heat transporting means 54 a. The cooling Peltier elements 52a to 52h that cool the cooling ends of ~ 54h may be individually controlled to perform zone control so as to eliminate the uneven temperature distribution.

また、熱電素子制御部70は、微動ステージ47に配置した温度センサ61fの検知温度に応じて冷却用ペルチェ素子52に加える制御信号を変動させ、ステージ機構2全体の排出熱量を調整することとしてよい。さらに、温度センサ61fの検知温度が所定の許容温度を超えた場合には、オーバーヒートを警告するアラーム信号を発生してオペレータに知らせることとしてもよい。   Further, the thermoelectric element control unit 70 may adjust the exhaust heat amount of the entire stage mechanism 2 by changing the control signal applied to the cooling Peltier element 52 in accordance with the temperature detected by the temperature sensor 61f disposed on the fine movement stage 47. . Furthermore, when the temperature detected by the temperature sensor 61f exceeds a predetermined allowable temperature, an alarm signal that warns of overheating may be generated to notify the operator.

上記説明では、ステージ機構2を電子線近接露光装置1のウエハを支持して移動するXYステージ46に適用した場合について説明したが、同様の温度調整機能をマスクを保持するマスクホルダ34又はマスクホルダ34を移動するマスクステージ36に適用してよい。
すなわち、電子線近接露光装置1のマスク用ステージ機構は、可動台部であるマスクステージ36と、マスクステージ36に設けられる試料保持部であるマスクホルダ34と、マスクホルダ34と離隔して、マスクステージ36に設けられる加熱用熱電素子である加熱用ペルチェ素子及び冷却用熱電素子である冷却用ペルチェ素子と、加熱用ペルチェ素子とマスクホルダ34との間で熱輸送を行う加熱用熱輸送手段である加熱用ヒートパイプ(又はヒートレーン(登録商標))と、冷却用ペルチェ素子とマスクホルダ34の間で熱輸送を行う冷却用熱輸送手段である冷却用ヒートパイプ(又はヒートレーン(登録商標))と、を備えることとしてよい。
In the above description, the case where the stage mechanism 2 is applied to the XY stage 46 that moves while supporting the wafer of the electron beam proximity exposure apparatus 1 has been described. However, the same temperature adjustment function is applied to the mask holder 34 or the mask holder that holds the mask. 34 may be applied to a mask stage 36 that moves.
That is, the mask stage mechanism of the electron beam proximity exposure apparatus 1 includes a mask stage 36 that is a movable stage, a mask holder 34 that is a sample holder provided on the mask stage 36, and a mask holder 34 that is separated from the mask holder 34. A heating Peltier element that is a heating thermoelectric element provided on the stage 36, a cooling Peltier element that is a cooling thermoelectric element, and a heating heat transport means that transports heat between the heating Peltier element and the mask holder 34. A certain heat pipe (or heat lane (registered trademark)), and a cooling heat pipe (or heat lane (registered trademark)) that is a heat transport means for cooling that transports heat between the cooling peltier element and the mask holder 34; , May be provided.

マスク近傍をさらに非磁性に保つため、熱輸送手段は非磁性材料で構成されることが好適である。また、温度制御性を高めるため、マスクホルダ34及び/又は熱輸送手段に設けられる温度センサと、温度センサによる検知温度に基づき加熱用ペルチェ素子及び/又は冷却用ペルチェ素子の駆動信号を出力して、マスクホルダ34に保持されたマスク30を所定温度に保つ熱電素子制御部と、を備えることとしてよい。
熱電素子制御部は、冷却用ペルチェ素子を一定信号で駆動しつつ、加熱用ペルチェ素子を温度センサによる検知温度に基づき駆動することとしてよく、反対に熱電素子制御部は、加熱用ペルチェ素子を一定信号で駆動しつつ、冷却用ペルチェ素子を温度センサによる検知温度に基づき駆動することとしてもよい。
In order to keep the vicinity of the mask more non-magnetic, it is preferable that the heat transport means is made of a non-magnetic material. In addition, in order to improve temperature controllability, a driving signal for the heating Peltier element and / or the cooling Peltier element is output based on the temperature sensor provided in the mask holder 34 and / or the heat transport means and the temperature detected by the temperature sensor. And a thermoelectric element controller that maintains the mask 30 held by the mask holder 34 at a predetermined temperature.
The thermoelectric element controller may drive the Peltier element for heating based on the temperature detected by the temperature sensor while driving the Peltier element for cooling with a constant signal. The cooling Peltier element may be driven based on the temperature detected by the temperature sensor while being driven by the signal.

加熱用熱輸送手段は加熱用ペルチェ素子の発熱部とマスクホルダ34との間の熱輸送を行い、冷却用熱輸送手段は、冷却用ペルチェ素子の受熱部とマスクホルダ34との間の熱輸送を行い、加熱用ペルチェ素子の受熱部と冷却用ペルチェ素子の発熱部とは、マスクステージ36を介して熱交換を行うこととすることが好適である。   The heat transport means for heating performs heat transport between the heat generating part of the heating Peltier element and the mask holder 34, and the heat transport means for cooling transports heat between the heat receiving part of the Peltier element for cooling and the mask holder 34. It is preferable that the heat receiving part of the heating Peltier element and the heat generating part of the cooling Peltier element exchange heat via the mask stage 36.

本発明は、試料を保持するステージ機構を備え、かつ保持すべき試料の温度を調節する必要がある装置に広く適用可能であり、特に荷電粒子線装置、電子線露光装置、電子顕微鏡、電子線検査装置など種々の電子線装置に好適に利用することが可能である。   INDUSTRIAL APPLICABILITY The present invention is widely applicable to an apparatus that includes a stage mechanism that holds a sample and that needs to adjust the temperature of the sample to be held, and in particular, a charged particle beam apparatus, an electron beam exposure apparatus, an electron microscope, and an electron beam. It can be suitably used for various electron beam devices such as inspection devices.

電子線近接露光装置の概略構成図である。It is a schematic block diagram of an electron beam proximity exposure apparatus. 本発明の実施例に係るステージ機構の概略構成図である。It is a schematic block diagram of the stage mechanism based on the Example of this invention. 熱輸送手段の配置図である。It is a layout view of heat transport means.

符号の説明Explanation of symbols

40…試料
44…チャック
45…均熱板
49…断熱支持部材
53…加熱用ヒートパイプ
54…冷却用ヒートパイプ
55…温調部
61a〜61e…温度センサ
40 ... Sample 44 ... Chuck 45 ... Soaking plate 49 ... Heat insulation support member 53 ... Heating heat pipe 54 ... Cooling heat pipe 55 ... Temperature control sections 61a to 61e ... Temperature sensor

Claims (6)

可動台部と、
前記可動台部に設けられる試料保持部と、
前記試料保持部と離隔して、前記可動台部に設けられる加熱用熱電素子及び冷却用熱電素子と、
前記加熱用熱電素子と前記試料保持部との間で熱輸送を行う加熱用熱輸送手段と、
前記冷却用熱電素子と前記試料保持部との間で熱輸送を行う冷却用熱輸送手段と、
を備えることを特徴とするステージ機構。
A movable base,
A sample holder provided on the movable table,
A heating thermoelectric element and a cooling thermoelectric element provided on the movable base part apart from the sample holding part,
A heating heat transporting means for transporting heat between the heating thermoelectric element and the sample holder;
A cooling heat transport means for transporting heat between the cooling thermoelectric element and the sample holder;
A stage mechanism comprising:
前記熱輸送手段は、非磁性材料で構成されることを特徴とする請求項1に記載のステージ機構。   The stage mechanism according to claim 1, wherein the heat transport means is made of a nonmagnetic material. さらに、前記試料保持部及び/又は前記熱輸送手段に設けられる温度センサと、
前記温度センサによる検知温度に基づき前記加熱用熱電素子及び/又は前記冷却用熱電素子の駆動信号を出力して、前記試料保持部に保持された試料を所定温度に保つ熱電素子制御部と、
を備える請求項1に記載のステージ機構。
Furthermore, a temperature sensor provided in the sample holder and / or the heat transport means,
A thermoelectric element control unit that outputs a driving signal of the heating thermoelectric element and / or the cooling thermoelectric element based on a temperature detected by the temperature sensor and maintains the sample held in the sample holding part at a predetermined temperature;
The stage mechanism according to claim 1, comprising:
前記熱電素子制御部は、前記冷却用熱電素子を一定信号で駆動しつつ、前記加熱用熱電素子を前記温度センサによる検知温度に基づき駆動することを特徴とする請求項3に記載のステージ機構。   The stage mechanism according to claim 3, wherein the thermoelectric element control unit drives the heating thermoelectric element based on a temperature detected by the temperature sensor while driving the cooling thermoelectric element with a constant signal. 前記熱電素子制御部は、前記加熱用熱電素子を一定信号で駆動しつつ、前記冷却用熱電素子を前記温度センサによる検知温度に基づき駆動することを特徴とする請求項3に記載のステージ機構。   The stage mechanism according to claim 3, wherein the thermoelectric element control unit drives the cooling thermoelectric element based on a temperature detected by the temperature sensor while driving the heating thermoelectric element with a constant signal. 前記加熱用熱電素子と前記冷却用熱電素子とは、それぞれ熱交換素子により構成され、
前記加熱用熱輸送手段は、前記加熱用熱電素子としての熱交換素子の発熱部と前記試料保持部との間の熱輸送を行い、
前記冷却用熱輸送手段は、前記冷却用熱電素子としての熱交換素子の受熱部と前記試料保持部との間の熱輸送を行い、
前記加熱用熱電素子としての熱交換素子の受熱部と前記冷却用熱電素子としての熱交換素子の発熱部とは、前記可動台を介して熱交換を行うことを特徴とする請求項1に記載のステージ機構。
The heating thermoelectric element and the cooling thermoelectric element are each constituted by a heat exchange element,
The heating heat transporting means performs heat transport between the heat generating element of the heat exchange element as the heating thermoelectric element and the sample holding part,
The cooling heat transporting means performs heat transport between a heat receiving part of the heat exchange element as the thermoelectric element for cooling and the sample holding part,
The heat receiving part of the heat exchange element as the thermoelectric element for heating and the heat generating part of the heat exchange element as the thermoelectric element for cooling perform heat exchange via the movable base. Stage mechanism.
JP2004160887A 2004-05-31 2004-05-31 Stage mechanism Pending JP2005340719A (en)

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080905A (en) * 2008-09-26 2010-04-08 Inotera Memories Inc Wafer temperature and obliquity monitoring method and system
JP2010141319A (en) * 2008-12-10 2010-06-24 Asml Netherlands Bv Lithographic apparatus and positioning apparatus
WO2011004533A1 (en) * 2009-07-08 2011-01-13 株式会社 日立ハイテクノロジーズ Charged particle beam device
JP2011023716A (en) * 2009-07-13 2011-02-03 Asml Netherlands Bv Heat transfer assembly, lithographic apparatus, and manufacturing method
JP4825812B2 (en) * 2005-01-10 2011-11-30 イーアールエス エレクトロニック ゲーエムベーハー Semiconductor wafer inspection method and apparatus using chuck device capable of adjusting temperature
JP2012023371A (en) * 2010-07-16 2012-02-02 Asml Netherlands Bv Lithographic apparatus and method
EP2771905A4 (en) * 2011-10-27 2015-07-08 Kla Tencor Corp EXTRACTING THE HEAT OF SUBSTRATES IN THE EMPTY
US11158484B2 (en) 2017-08-31 2021-10-26 Asml Netherlands B.V. Electron beam inspection tool and method of controlling heat load
US12434341B2 (en) 2022-04-22 2025-10-07 Samsung Electronics Co., Ltd. Electrostatic chuck apparatus

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140818U (en) * 1988-03-22 1989-09-27
JPH0485918A (en) * 1990-07-30 1992-03-18 Canon Inc Wafer cooler for x-ray exposure device
JPH0521308A (en) * 1991-07-09 1993-01-29 Canon Inc Wafer support device
JPH1079344A (en) * 1996-09-04 1998-03-24 Canon Inc Original plate holding apparatus and exposure apparatus using the same
JP2001203152A (en) * 2000-01-19 2001-07-27 Tokyo Electron Ltd Substrate heat treatment equipment
JP2002353116A (en) * 2001-05-28 2002-12-06 Toshiba Corp Charged particle drawing equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140818U (en) * 1988-03-22 1989-09-27
JPH0485918A (en) * 1990-07-30 1992-03-18 Canon Inc Wafer cooler for x-ray exposure device
JPH0521308A (en) * 1991-07-09 1993-01-29 Canon Inc Wafer support device
JPH1079344A (en) * 1996-09-04 1998-03-24 Canon Inc Original plate holding apparatus and exposure apparatus using the same
JP2001203152A (en) * 2000-01-19 2001-07-27 Tokyo Electron Ltd Substrate heat treatment equipment
JP2002353116A (en) * 2001-05-28 2002-12-06 Toshiba Corp Charged particle drawing equipment

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4825812B2 (en) * 2005-01-10 2011-11-30 イーアールエス エレクトロニック ゲーエムベーハー Semiconductor wafer inspection method and apparatus using chuck device capable of adjusting temperature
JP2010080905A (en) * 2008-09-26 2010-04-08 Inotera Memories Inc Wafer temperature and obliquity monitoring method and system
JP2010141319A (en) * 2008-12-10 2010-06-24 Asml Netherlands Bv Lithographic apparatus and positioning apparatus
US8411247B2 (en) 2008-12-10 2013-04-02 Asml Netherlands B.V. Lithographic apparatus and positioning apparatus
WO2011004533A1 (en) * 2009-07-08 2011-01-13 株式会社 日立ハイテクノロジーズ Charged particle beam device
US8558193B2 (en) 2009-07-08 2013-10-15 Hitachi High-Technologies Corporation Charged particle beam device
JP2011023716A (en) * 2009-07-13 2011-02-03 Asml Netherlands Bv Heat transfer assembly, lithographic apparatus, and manufacturing method
JP2012114472A (en) * 2009-07-13 2012-06-14 Asml Netherlands Bv Heat transfer assembly, lithographic apparatus, and manufacturing method
JP2012023371A (en) * 2010-07-16 2012-02-02 Asml Netherlands Bv Lithographic apparatus and method
EP2771905A4 (en) * 2011-10-27 2015-07-08 Kla Tencor Corp EXTRACTING THE HEAT OF SUBSTRATES IN THE EMPTY
US11158484B2 (en) 2017-08-31 2021-10-26 Asml Netherlands B.V. Electron beam inspection tool and method of controlling heat load
US12434341B2 (en) 2022-04-22 2025-10-07 Samsung Electronics Co., Ltd. Electrostatic chuck apparatus

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