JP2005276850A - Substrate processing equipment - Google Patents

Abstract

An object of the present invention is to prevent damage when removing a bolt for fixing a boat or the like.
A processing chamber 24 for processing wafers 1 held in a boat 33, a seal cap 16 for supporting the boat 33, carrying in and out of the processing chamber 24, and closing a furnace port 27, and a sealing cap 16 In a batch type vertical hot wall heat treatment apparatus having a bolt 76 for fixing the boat 33 to the rotating shaft 17 inserted through the cover, a cover 78 is covered on the upper surface of the lower end plate 35 of the boat 33 from above. Install. Since it is possible to prevent the bolt from being formed by the cover, it is possible to prevent the bolt from being difficult to remove due to the film formation. For example, even if the cover is difficult to remove and is damaged, it is not necessary to replace main parts such as a boat and a seal cap, so that the heat treatment apparatus maintenance is not hindered.
[Selection] Figure 4

Description

  The present invention relates to a substrate processing apparatus that accommodates a substrate in a processing chamber and performs processing under heating. For example, the present invention relates to a semiconductor wafer (hereinafter referred to as a wafer) in which a semiconductor integrated circuit device (hereinafter referred to as an IC) is fabricated. Effective for heat treatment equipment (furnace) used for thermal treatment such as oxidation, diffusion, reactivation for carrier activation and planarization after ion implantation, annealing and film formation by thermal CVD reaction About.

  A batch type vertical hot wall heat treatment apparatus (hereinafter referred to as a vertical heat treatment apparatus) is widely used for heat treatment of wafers in IC manufacturing methods. The vertical heat treatment apparatus includes an inner tube and an outer tube surrounding the inner tube, and a vertical process tube, and a heater that is installed outside the process tube and heats the inside of the process tube. Each wafer is loaded into the inner tube from the bottom furnace port (boat loading) in a state where the wafer is long aligned and held by the boat, and the processing chamber is heated by the heater so that the wafer is heat-treated. There is something that is configured to.

As a conventional vertical heat treatment device of this type, a sub-heater for auxiliary heating is installed at the bottom of a boat with a large heat release amount to ensure the recovery and stability of the temperature in the vertical direction of the processing chamber in a short time. (For example, refer to Patent Document 1).
JP 2003-282578 A

In the above-described vertical heat treatment apparatus, since the sub-heater is disposed in the vicinity of the boat and below the boat, it is easy to form a film on the bolt for fixing the boat to the seal cap. It is difficult to remove the bolts during the maintenance of the cap. For example, when the bolt is made of quartz (SiO ₂ ), if the bolt cannot be smoothly rotated when removing the bolt, the head of the bolt or the thread of the bolt or seal cap may be damaged. If it is damaged, it is necessary to replace major parts such as boats and seal caps.

  An object of the present invention is to provide a substrate processing apparatus capable of preventing damage at the time of removing a bolt for fixing a boat, a seal cap, a sub-heater and the like.

Representative inventions disclosed in the present application are as follows.
(1) A processing chamber for processing a substrate held on a substrate holder, a heater for heating the processing chamber, a gas supply pipe for supplying gas to the processing chamber, an exhaust pipe for exhausting the processing chamber, A substrate processing apparatus comprising: a detachable connecting member housed in the processing chamber; and a protective member covering the connecting member.
(2) A processing chamber that holds and processes a substrate on a substrate holder, a heater that heats the processing chamber, a gas supply pipe that supplies gas to the processing chamber, an exhaust pipe that exhausts the processing chamber, A substrate processing apparatus, comprising: a detachable connecting member housed in the processing chamber; and a cover for covering the connecting member and protecting the gas from the gas.
(3) A processing chamber that holds a substrate on a substrate holder for processing, a heater that heats the processing chamber, a gas supply pipe that supplies gas to the processing chamber, an exhaust pipe that exhausts the processing chamber, A detachable connecting member housed in the processing chamber, and a cover for covering the connecting member and protecting the reaction product generated when the heater is heated while supplying the gas. A substrate processing apparatus.
(4) A processing chamber that holds a substrate on a substrate holder for processing, a heater that heats the processing chamber, a gas supply pipe that supplies gas to the processing chamber, an exhaust pipe that exhausts the processing chamber, A method of manufacturing a semiconductor device using a substrate processing apparatus including a detachable connecting member housed in the processing chamber and a protective member covering the connecting member,
Holding the substrate on a substrate holder and carrying it into the processing chamber, carrying the connecting member and the protective member into the processing chamber, heating the processing chamber with the heater, and supplying the gas A method of manufacturing a semiconductor device, comprising: a tube supplying a gas to the processing chamber; and an exhaust tube exhausting the processing chamber.

  According to the present invention, since the connecting member is covered with the protective member, it is possible to prevent the connecting member from being formed into a film, and thus it is possible to prevent the connecting member from becoming difficult to remove due to film formation. be able to. Even if the protective member is difficult to remove and is damaged, it is not necessary to replace other main parts such as a boat and a seal cap, so that the maintenance of the substrate processing apparatus is not hindered.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  In the present embodiment, the substrate processing apparatus according to the present invention is configured as a vertical heat treatment apparatus (batch type vertical hot wall heat treatment apparatus) for performing a heat treatment step in an IC manufacturing method. As shown in FIG. 1, the vertical heat treatment apparatus 10 includes a housing 12 in which a standby chamber 11 that is a load-lock type preliminary chamber is formed. The waiting room 11 is provided with a boat elevator 13 for raising and lowering the boat, and the boat elevator 13 is constructed by a motor-driven feed screw shaft device, a bellows, or the like. A seal cap 16 is supported on an elevator platform 14 of the boat elevator 13 via an arm 15. A rotary shaft 17 is inserted on the center line of the seal cap 16 and is rotatably supported by a bearing device. The shaft 17 is configured to be rotationally driven by a motor 18. A heat insulating cap 40 is erected on the upper surface of the seal cap 16.

  As shown in FIG. 2, a process tube 21 is vertically installed on the housing 12 so that the center line is vertical. The process tube 21 includes an outer tube 22 and an inner tube 23. The outer tube 22 is made of quartz, and has an inner diameter larger than the outer diameter of the inner tube 23 and is formed in a cylindrical shape with the upper end closed and the lower end opened. It has been. The inner tube 23 is made of quartz or silicon carbide (SiC) and is formed in a cylindrical shape with both upper and lower ends opened. The cylindrical hollow portion of the inner tube 23 forms a processing chamber 24 into which a plurality of wafers held by a boat are loaded. The inner diameter of the inner tube 23 is larger than the maximum outer diameter of the wafer to be handled (for example, 300 mm). Is also set to be large. A donut-shaped exhaust passage 25 is formed between the inner tube 23 and the outer tube 22, and the lower end portion of the exhaust passage 25 is hermetically sealed by a manifold 26 constructed in a multistage cylindrical shape.

  For exchanging the outer tube 22 and the inner tube 23, the manifold 26 is detachably attached to the outer tube 22 and the inner tube 23 as shown in FIG. Since the manifold 26 is supported by the casing 12 of the vertical heat treatment apparatus 10, the process tube 21 is installed vertically. The furnace port 27 is formed by the lower end opening of the manifold 26, and the furnace port 27 is configured to be opened and closed by the shutter 20 as shown in FIG. 1.

  As shown in FIG. 3, an exhaust pipe 28 is connected to the lower end portion of the outer tube 22, and the exhaust pipe 28 is connected to an exhaust device (not shown) to exhaust the inside of the process tube 21. To get. The exhaust pipe 28 is connected to an exhaust path 25 formed between the outer tube 22 and the inner tube 23. The exhaust pipe 28 is formed in a cylindrical hollow body and is disposed at the lowermost end portion of the exhaust passage 25 extending vertically. Further, a gas supply pipe 29 is connected to the lower portion of the side wall of the manifold 26 so as to communicate with the furnace port 27. The gas supply pipe 29 is connected to a raw material gas supply device, a carrier gas supply device, and a purge gas supply device (all of them). (Not shown) is connected. The gas introduced into the furnace port 27 by the gas supply pipe 29 flows through the processing chamber 24 of the inner tube 23, passes through the exhaust path 25, and is exhausted to the outside by the exhaust pipe 28.

  As shown in FIG. 2, outside the process tube 21, a first heater (hereinafter referred to as a main heater) that heats the processing chamber is positioned around the processing chamber in a horizontal direction with respect to the main surface of the wafer. ) 30 is installed, and the main heater 30 is vertically supported by the casing 12. The main heater 30 includes a heat insulating tank 31 that entirely covers the outside of the process tube 21, and a heating element 32 that is laid concentrically on the inner peripheral surface of the heat insulating tank 31 so as to surround the outer tube 22. Yes. A plurality of blocks in which a heat insulating material such as glass wool is formed in a donut shape is stacked in the heat insulating tank 31 and is formed in a cylindrical shape having a diameter larger than the outer diameter of the process tube 21 and the same length. It is installed vertically by being supported by the housing 12. The heating element 32 is formed of a linear resistance heating element such as a nichrome wire or molybdenum disilicide, and is wound around the inner peripheral surface of the heat insulating tank 31. The heating element 32 is divided into a plurality of zones and is configured to be so-called zone heating controlled.

  As shown in FIGS. 1, 2, and 4, a boat 33 formed entirely of quartz or silicon carbide (SiC) is vertically installed at the upper end of the rotating shaft 17. The boat 33 includes a pair of upper and lower end plates 34 and 35, and a plurality of holding members 36 installed between the both end plates 34 and 35 and arranged vertically, and the plurality of holding members 36. A plurality of holding grooves 37 are arranged at equal intervals in the longitudinal direction so as to be opened facing each other. The boat 33 inserts the peripheral portions of the wafers 1 between the holding grooves 37 of the plurality of holding members 36, thereby holding the plurality of wafers 1 aligned in a state where the centers are aligned horizontally. It is like that.

  As shown in FIG. 4, a bolt insertion hole 71 penetrating in the vertical direction is formed at the center of the lower end plate 35 of the boat 33, and a circular shape is formed at the center of the lower surface of the lower end plate 35. The attachment hole 72 is concentric with the bolt insertion hole 71. An anti-rotation recess 73 is provided in the opening of the mounting hole 72 so as to extend in the radial direction. An anti-rotation projection 74 that engages with the anti-rotation recess 73 is provided on the outer periphery of the upper end of the rotary shaft 17 in the radial direction, and the engagement of the anti-rotation recess 73 and the anti-rotation projection 74 results in the boat 33 is prevented from rotating around the rotary shaft 17. The rotating shaft 17 is made of quartz. A female screw hole 75 is formed on the upper end surface of the rotating shaft 17. When the upper end portion of the rotating shaft 17 is fitted in the mounting hole 72, a bolt 76 as a connecting member is provided in the lower end plate in the female screw hole 75. The boat 33 is fastened to the rotary shaft 17 by being inserted into the bolt insertion hole 71 from above the screw 35 and screwed. The bolt 76 is made of quartz. An annular groove 77 is disposed concentrically with the bolt insertion hole 71 at the center of the upper surface of the lower end plate 35, and a cover 78 as a protective member covering the bolt 76 is placed on the bottom surface of the annular groove 77. Has been. The cover 78 is made of quartz and is formed in a cylindrical shape with the upper end closed and the lower end opened. The lower end opening 35 is placed on the bottom surface of the annular groove 77, so that the cover 78 has the lower end plate 35. Are positioned in concentric circles.

  A heat insulating cap 40 is installed on the seal cap 16 concentrically with the rotating shaft 17. The heat insulating cap 40 is provided with a pair of end plates 41 and 42 at the top and bottom, and a plurality of holding members 43 that are installed between the both end plates 41 and 42 and arranged vertically. In 43, a plurality of holding grooves 44 are arranged at equal intervals in the longitudinal direction so as to be opened facing each other. Peripheral portions of the heat insulating plate 45 are respectively inserted between the holding grooves 44 of the plurality of holding members 43, and the heat insulating plates 45 are held by the holding member 43 so as to be aligned horizontally and aligned with each other. ing. The boat 33 is installed by being lifted from the seal cap 16 so as to be separated from the furnace port 27 where the heat is easily exhausted and the fluctuation of heat is large. The heat insulating cap 40 is configured to block heat from entering and exiting the furnace port 27 by filling a space between the upper surface of the seal cap 16 and the lower surface of the boat 33.

  As shown in FIG. 4, a second heater 50 (hereinafter referred to as a sub-heater) 50 is installed horizontally on the heat insulating cap 40 and is positioned in a direction perpendicular to the main surface of the wafer 1. The sub-heater 50 includes a holder 52 that is horizontally supported on the seal cap 16 by a plurality of support columns 51. The holder 52 is formed in a disc shape using quartz. A holding groove 53 is formed in a meandering shape in a circular shape on the upper surface of the holder 52, and a single C heating element (carbon heating element) 54 is laid in the holding groove 53. The C heating element 54 is an elongated bar having a concave section, and is formed in a panel shape following the circular meandering of the holding groove 53. On the upper surface of the C heating element 54 formed in the shape of a circular panel, a recess 55 is immersed at a constant width and a constant depth over the entire length. A cap 56 is placed on the upper surface of the holder 52 so as to close the holding groove 53, and the C heating element 54 is hermetically sealed by the cap 56. Further, an inert gas (not shown) such as nitrogen gas is enclosed in the holding groove 53, and the C heating element 54 is prevented from being corroded by the enclosed inert gas. The recess 55 on the upper surface of the C heating element 54 may be omitted, and the holding groove 53 is not limited to being formed in a circular meandering shape, but may be formed in a circular hole shape as a whole.

  As shown in FIGS. 1 and 2, a thermocouple 60 is vertically penetrated and fixed vertically at one place on the periphery of the seal cap 16 so as not to interfere with the boat 33. The thermocouple 60 is positioned between the inner peripheral surface of the inner tube 23 and the outer peripheral surface of the boat 33 when the 33 is carried into the processing chamber 24. The thermocouple 60 is connected to a temperature controller (not shown), and the thermocouple 60 transmits a temperature measurement result to the temperature controller. The temperature controller feedback-controls the main heater 30 and the sub heater 50 based on the measured temperature from the thermocouple 60. That is, the temperature controller obtains an error between the target temperature of the main heater 30 and the sub heater 50 and the measured temperature of the thermocouple 60, and executes feedback control for eliminating the error if there is an error.

  Next, the heat treatment process of the IC manufacturing method when the vertical heat treatment apparatus according to the above configuration is used will be described.

  As shown in FIG. 1, a plurality of wafers 1 as substrates to be processed are loaded (wafer charging) on a boat 33 by a wafer transfer device (not shown). The boat 33 in which a plurality of wafers 1 are aligned and held is lifted up by the boat elevator 13 and loaded into the processing chamber 24 from the furnace port 27 (boat loading). As shown in FIG. It remains in the processing chamber 24 in a state where it is supported.

  In the present embodiment, the electric power is supplied to the C heating element 54 of the sub-heater 50 through the power supply wiring while the boat 33 is being carried into the processing chamber 24 or after the carry-in is completed. The group of wafers held on the substrate is supplementarily heated by the sub heater 50. Further, when the rotary shaft 17 is rotationally driven by the motor 18, the boat 33 is gently rotated at a speed that does not apply an inertial force to the wafer group 1 and the heat insulating plate 45.

  Here, the reason why auxiliary heating is performed by the sub heater 50 during or after the boat 33 is carried into the processing chamber 24 will be described. In most cases, the main heater 30 laid outside the process tube 21 to heat the processing chamber 24 as a whole is brought into the processing chamber 24 of the boat 33 so as to quickly reach a preset processing temperature. For example, the processing chamber 24 is heated at a standby temperature lower by about 150 ° C. to 200 ° C. than the processing temperature. Therefore, the wafer group 1 in the upper region of the boat 33 is carried into the processing chamber 24 at the standby temperature earlier than the wafer group 1 in the lower region. As a result, the thermal history is different between the wafer 1 in the upper region and the wafer 1 in the lower region, so that the heat treatment state is different over the entire length of the boat 33 despite the heat treatment by the same vertical heat treatment apparatus. Resulting in. Therefore, in the present embodiment, heating by the sub-heater 50 is performed during or after the loading of the boat 33 into the processing chamber 24, so that the group of wafers in the lower region of the boat 33 is supplementarily heated from below. Control for matching the thermal history between the wafer 1 in the upper region and the wafer 1 in the lower region is executed. Incidentally, the timing of the heating start by the sub-heater 50 is between the wafer 1 in the upper region and the wafer 1 in the lower region depending on the carry-in speed of the boat 33 into the processing chamber 24 and the temperature difference between the inside and outside of the processing chamber 24. It is desirable to select appropriately according to the difference in thermal history.

  When the loading of the boat 33 into the processing chamber 24 is completed, the inside of the process tube 21 is evacuated by the exhaust pipe 28, and the inside of the process tube 21 is set to a preset processing temperature, that is, a target temperature for sequence control of the temperature controller ( For example, the heating element 32 of the main heater 30 is heated to 600 ° C. to 1300 ° C. At this time, the error between the actual temperature rise inside the process tube 21 due to the heating of the heating element 32 of the main heater 30 and the target temperature of the sequence control of the heating element 32 is feedback control based on the temperature measurement result of the thermocouple 60. Respectively.

  Incidentally, in the present embodiment, in order to improve the uniformity of the temperature distribution in the vertical direction of the processing chamber 24, for example, the measured temperature at the lowest stage of the thermocouple 60 corresponding to the group of wafers 1 in the lower region and the other temperature When the difference from the measured temperature is in a certain range for a predetermined period or longer, control is executed to automatically stop the sub-heater 50 from auxiliaryly heating the group of wafers in the lower region of the boat 33 from below. be able to.

  When the entire processing chamber 24 is stabilized at the processing temperature set in advance by the above temperature control, the processing gas is introduced into the processing chamber 24 from the gas supply pipe 29. The processing gas introduced into the processing chamber 24 moves up the processing chamber 24, then flows into the exhaust path 25 from the upper end opening of the inner tube 23, and is exhausted from the exhaust pipe 28 through the exhaust path 25. As the processing gas flows through the processing chamber 24, it heat-treats the surface of the wafer 1 by contacting the group of wafers 1. At this time, the boat 33 continues to be gently rotated by the rotating shaft 17 in order to improve the uniformity of the temperature distribution in the surface of the wafer 1 and the uniformity of the distribution of the heat treatment state.

  Since the heat insulating cap 40 is interposed below the sub-heater 50 that is the lower end region of the boat 33, the group of wafers in the lower end region of the boat 33 is separated from the furnace port 27 that is not easily controlled by the main heater 30. Thus, the uniformity of the temperature of the group of wafers in the lower end region with respect to the entire group of wafers 33 in the boat 33 is increased.

  When the preset heat treatment time elapses, the heating action of the main heater 30 is stopped by the sequence control of the temperature controller, and the temperature inside the process tube 21 is lowered to the preset standby temperature. Also at this time, the error between the actual temperature drop of the processing chamber 24 by the main heater 30 and the target temperature of the sequence control is corrected by feedback control based on the temperature measurement result of the thermocouple 60, respectively.

  When a preset standby temperature is reached or when a preset temperature drop time elapses, the seal cap 16 is lowered, the furnace port 27 is opened, and the wafer group 1 is held in the boat 33 while being held. It is unloaded from the furnace port 27 to the outside of the process tube 21 (boat unloading).

  Here, when the boat 33 is unloaded from the processing chamber 24, the wafer 1 group in the lower region of the boat 33 is unloaded to the processing chamber 24 earlier than the wafer 1 group in the upper region. The thermal history is different between the wafer 1 and the wafer 1 in the upper region. Therefore, in the present embodiment, heating by the sub-heater 50 is performed during or before the start of unloading of the boat 33 to the processing chamber 24, and the group of wafers in the lower region of the boat 33 is supplementarily heated from below. As a result, the control for matching the thermal history between the wafer 1 in the lower region and the wafer 1 in the upper region is executed. Incidentally, the heating start timing by the sub-heater 50 is between the lower region wafer 1 and the upper region wafer 1 depending on the unloading speed of the boat 33 from the processing chamber 24 and the temperature difference between the inside and outside of the processing chamber 24. It is desirable to select appropriately according to the difference in thermal history.

  When the boat 33 is unloaded from the processing chamber 24, the processed wafer group 1 is detached from the boat 33 (discharging). By repeating the above operation, the heat treatment by the vertical heat treatment apparatus is batch-processed on the wafer 1.

  By the way, in the conventional example in which the bolt 76 is exposed without the cover 78, a reaction product or an unreacted product is formed between the gap between the bolt 76 and the bolt insertion hole 71 or between the screw thread of the bolt 76 and the female screw hole 75. As a result, the bolts 76 may be difficult to remove during maintenance of the boat 33 and the rotating shaft 17. For example, if the bolt 76 cannot be rotated smoothly when the bolt 76 is removed, the head of the bolt 76 or the screw thread of the bolt 76 or the female screw hole 75 may be damaged. Cannot be removed from the rotary shaft 17, it is necessary to replace main components such as the boat 33 and the rotary shaft 17. Incidentally, when the sub-heater 50 is installed, the temperature in the vicinity of the bolt 76 becomes high and it becomes easy to form a film, so the phenomenon of adhesion due to the film formation of the bolt 76 becomes remarkable.

  In the present embodiment, since the bolt 76 is covered with the cover 78, reaction products and unreacted products are generated between the gap between the bolt 76 and the bolt insertion hole 71 and between the bolt 76 and the thread of the female screw hole 75. An object can be prevented from adhering and accumulating. Even if the reaction product or the unreacted product adheres and accumulates between the cover 78 and the annular groove 77 and the cover 78 cannot be removed and the cover 78 is damaged, the bolt 76 has the female screw hole 75. Therefore, it is possible to prevent the main parts such as the boat 33 and the rotary shaft 17 from being replaced. Even if the sub-heater 50 is installed below the boat 33 and film formation is promoted in the vicinity of the lower end plate 35 of the boat 33 as in the present embodiment, the bolt 76 Since the removal from the female screw hole 75 can be ensured, installation of the sub heater 50 below the boat 33 can be realized.

  According to the embodiment, the following effects can be obtained.

1) By covering the bolt with a cover, it is possible to prevent reaction products and unreacted products from depositing and accumulating between the gap between the bolt and the bolt insertion hole and between the bolt and the thread of the female screw hole. Therefore, the bolt can be reliably removed from the female screw hole.

2) By securing the removal of the bolt from the female screw hole, it is possible to ensure the disassembly of the boat and the rotating shaft, so there is no need to replace the main parts such as the boat and the rotating shaft. Can be prevented. As a result, the sub heater can be installed below the boat.

3) By making it easy to remove the bolt from the female screw hole, it is possible to shorten the maintenance time of the boat, the rotating shaft, etc., so that the operating efficiency of the vertical heat treatment apparatus can be improved.

4) Even if the reaction product or unreacted product adheres and accumulates between the cover and the annular groove, and the cover cannot be removed and the cover is damaged, the bolt can be removed from the female screw hole. Therefore, it is possible to prevent the necessity of replacement of main parts such as the boat and the rotating shaft.

  FIG. 5 is a sectional view showing a seal cap portion of a batch type vertical heat treatment apparatus according to the second embodiment of the present invention.

  The present embodiment is different from the above-described embodiment in that a boat pedestal 38 formed of stainless steel or a high corrosion-resistant high nickel alloy is horizontally provided at the upper end of the rotary shaft 17. The lower end plate 35 of the boat (made of quartz or silicon carbide) 33 placed on the top is fastened with bolts 76A formed of stainless steel or high nickel alloy with a slight clearance. A cover 78 formed of quartz or silicon carbide is installed on the lower end plate 35 so as to cover the bolts 76A.

  According to this embodiment, in addition to the above-described embodiment, the following operational effects can be obtained. Since the cover 78 can prevent the bolt 76A from being exposed to the processing chamber, the bolt 76A can be prevented from being corroded by highly corrosive gas even when the bolt 76A is made of metal. In addition, the metal contamination caused by the metal of the bolt 76A can be prevented. As a result, the bolt 76A can be formed of metal corresponding to the boat cradle 38.

  FIG. 6 is a sectional view showing a seal cap portion of a batch type vertical heat treatment apparatus according to the third embodiment of the present invention.

  This embodiment is different from the above embodiment in that a boat support 38 formed of stainless steel or a high corrosion resistance high nickel alloy is horizontally fixed to the upper end of the rotating shaft 17. A boat retainer 39 made of quartz or silicon carbide is in contact with the lower end plate 35 of the boat 33 placed thereon, and this boat retainer 39 is formed of stainless steel or a high nickel alloy. In addition to being secured by the bolt 76A, a cover 78 formed of quartz or silicon carbide is installed on the boat retainer 39 so as to cover the bolt 76A.

  According to this embodiment, in addition to the above-described embodiment, the following operational effects can be obtained. Since the cover 78 can prevent the bolt 76A from being exposed to the processing chamber, the bolt 76A can be prevented from being corroded by highly corrosive gas even when the bolt 76A is made of metal. In addition, the metal contamination caused by the metal of the bolt 76A can be prevented. As a result, the bolt 76A can be formed of metal corresponding to the boat cradle 38. Since the bolt 76A only needs to regulate the vertical movement of the boat retainer 39, a gap 39a may be set between the lower surface of the head of the bolt 76A and the upper surface of the boat retainer 39. When the gap 39a is set between the lower surface of the head of the bolt 76A and the upper surface of the boat retainer 39, the removal of the bolt 76A from the female screw hole 75 can be further ensured.

  FIG. 7 is a side view showing a boat of a batch type vertical heat treatment apparatus according to the fourth embodiment of the present invention.

  This embodiment differs from the above embodiment in that the lower end plate 35 of the boat 33 is placed on a heat insulating cap 40A constructed in a cylindrical shape by quartz or silicon carbide. The plate 35 is fastened to the heat insulating cap 40A by a bolt 76 formed of quartz or silicon carbide.

  Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.

  For example, the annular groove for positioning the cap may be omitted. Further, it is desirable to configure the cap in a shape and structure that is easy to attach and detach.

  The subcap may be omitted.

  The heat treatment is not limited to oxidation treatment, diffusion treatment, and diffusion, but is not limited to carrier activation after ion implantation and reflow and annealing treatment for planarization, and may be heat treatment such as film formation treatment.

  The workpiece is not limited to a wafer, but may be a photomask, a printed wiring board, a liquid crystal panel, an optical disk, a magnetic disk, or the like.

It is a partially cut rear view which shows the batch type vertical heat processing apparatus which is one embodiment of this invention. It is back sectional drawing which shows the principal part. It is sectional drawing which shows a manifold part. It is sectional drawing which shows a seal cap part. It is sectional drawing which shows the seal cap part of the batch type vertical heat processing apparatus which is the 2nd Embodiment of this invention. It is sectional drawing which shows the seal cap part of the batch type vertical heat processing apparatus which is the 3rd Embodiment of this invention. It is a perspective view which shows the boat of the batch type vertical heat processing apparatus which is the 4th Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Wafer (substrate to be processed), 10 ... Vertical heat treatment apparatus (substrate processing apparatus), 11 ... Standby chamber, 12 ... Housing, 13 ... Boat elevator, 14 ... Lifting platform, 15 ... Arm, 16 ... Seal cap, 17 Rotating shaft, 18 Motor, 20 Shutter, 21 Process tube, 22 Outer tube, 23 Inner tube, 24 Processing chamber, 25 Exhaust passage, 26 Manifold, 27 Furnace, 28 Exhaust pipe , 29 ... gas supply pipe, 30 ... main heater (first heater), 31 ... heat insulation tank, 32 ... heating element, 33 ... boat, 34, 35 ... end plate, 36 ... holding member, 37 ... holding groove, 40 ... Insulation cap, 41, 42 ... end plate, 43 ... holding member, 44 ... holding groove, 45 ... heat insulating plate, 50 ... sub-heater (second heater), 51 ... support, 52 ... holder, 53 ... holding groove, 54 ... C Heating element, 55 Recess, 56 ... Cap, 57 ... Joint, 58 ... Power supply wiring, 59 ... Pinch seal part, 60 ... Thermocouple, 71 ... Bolt insertion hole, 72 ... Mounting hole, 73 ... Rotation prevention recess, 74 ... Rotation prevention protrusion, 75 ... Female screw hole, 76 ... Bolt (connection member), 77 ... Annular groove, 78 ... Cover, 38 ... Boat cradle, 39 ... Boat holder, 39a ... Gap, 76A ... Bolt, 40A ... Thermal insulation cap.

Claims (1)

  A processing chamber that holds and processes a substrate on a substrate holder, a heater that heats the processing chamber, a gas supply pipe that supplies gas to the processing chamber, an exhaust pipe that exhausts the processing chamber, and the processing chamber A substrate processing apparatus, comprising: a connecting member that is housed in a removable manner; and a protective member that covers the connecting member.

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