JP2005264247A - Film deposition device, method for producing structure comprising insulator and electrode and structure comprising insulator and electrode - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition device where a structure comprising an insulator and electrodes can be easily and simply produced. <P>SOLUTION: The film deposition system comprises: a film deposition chamber 7 at which a holder 12 holding a substrate 20 on which a structure is formed is arranged; an evacuating pump 9 for evacuating the inside of the film deposition chamber; an aerosol production chamber 3 for producing aerosol by blowing up the powder of a raw material arranged at a vessel by gas; a nozzle 11 arranged at the film deposition chamber and spraying the produced aerosol toward the substrate; a gaseous starting material production chamber 4 and a carrier tube 5b for introducing the gaseous starting material as the precursor of a film deposition material used in a chemical vapor deposition method into the film deposition chamber; and a laser light oscillator part 8 where, for bringing the gaseous starting material into reaction in the substrate or in the prescribed region on the surface of the structure formed on the substrate, laser light is oscillated, so as to be applied to the region. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a structure including an insulator (dielectric) and an electrode, a manufacturing method thereof, and a film forming apparatus using the manufacturing method.

  Structures in which electrodes are formed on both ends of an insulator (dielectric) are used in various applications such as capacitors, piezoelectric actuators, piezoelectric pumps, ink heads of ink jet printers, and ultrasonic transducers. In recent years, along with the development of MEMS (microelectromechanical system) related devices, miniaturization and integration of elements having such a structure are progressing.

  In miniaturization of an element having a counter electrode, if the area of the element is reduced, the capacitance between the electrodes is reduced, which causes a problem that the electrical impedance of the element increases. For example, when the electrical impedance rises in the piezoelectric actuator, impedance matching with the signal circuit for driving the piezoelectric actuator cannot be achieved, and it becomes difficult to supply power, and the performance as a piezoelectric actuator is reduced. Or in the ultrasonic transducer using a piezoelectric element, the detection sensitivity of an ultrasonic wave will fall. Therefore, in order to increase the interelectrode capacitance while miniaturizing the element, a plurality of insulating layers and a plurality of electrode layers are alternately stacked. That is, the inter-electrode capacitance of the entire device can be increased by connecting a plurality of stacked layers in parallel.

  As a related technique, in Patent Document 1, after forming an electrode to be an internal electrode after lamination on a previously fired ceramic sheet, a plurality of ceramic sheets on which the electrode is formed are bonded using glass. Thus, it is disclosed to form a laminated structure in which internal electrodes are disposed in a piezoelectric body. Further, Patent Document 2 discloses a plurality of columnar piezoelectric bodies, a dielectric portion positioned between the plurality of columnar piezoelectric bodies, and the longitudinal length of the plurality of columnar piezoelectric bodies so as to cross the plurality of columnar piezoelectric bodies. A composite piezoelectric body having at least one inner conductor extending in a direction crossing the direction is disclosed. With such a structure, a composite piezoelectric body having a plurality of columnar piezoelectric bodies with a high aspect ratio and a small electrical impedance can be manufactured at low cost without degrading performance.

  In any of the above documents, the piezoelectric body is manufactured using a green sheet. However, in the case of using a green sheet, there is a handling problem that the sheet is easily broken when the thin sheets are laminated, and thus it is difficult to reduce each layer of the laminated structure to about 30 μm or less. In addition, it is more difficult to divide such a laminated structure to produce a fine element. In addition, since the green sheet contains impurities such as a binder, there is a problem that sufficient piezoelectric performance cannot be obtained.

  By the way, in recent years, it has been studied to use a film forming technique in order to form a piezoelectric layer without mixing a binder. For example, thin film formation methods represented by sputtering, physical vapor deposition (PVD), and chemical vapor deposition (CVD) are well known. However, it is difficult to form a thick film by these methods, and it is impossible to manufacture a laminated structure in which each layer of the piezoelectric body is 5 μm or more.

  Therefore, a method called an aerosol deposition (AD) method or a gas deposition method has attracted attention as a film forming method capable of forming a dense and strong thick film. The AD method or the gas deposition method is a method in which ultrafine particles of raw materials such as PZT (lead zirconate titanate) are sprayed from the nozzle toward the substrate to the substrate or the film formed earlier. This is a film forming method in which raw materials are deposited by collision.

  Patent Document 3 discloses that in such a gas deposition method, film formation conditions in each step are extracted and optimized in order to provide stable film quality. Further, in Patent Document 4, in such a film formation method, at least before the flow of the ultrafine particles collides with the substrate, high energy atoms such as ions, atoms, molecular beams, and low-temperature plasma are applied to the ultrafine particles and the substrate. By irradiating a high-speed high-energy beam that is a molecule, the ultrafine particles and the substrate surface are activated without melting, promoting the bonding between the ultrafine particles and the substrate or the ultrafine particles, and maintaining the crystallinity of the ultrafine particles. An ultrafine particle film forming method for forming a deposit having a dense and good film property and a good adhesion to a substrate is disclosed.

  Thus, by using the AD method, a piezoelectric film with good piezoelectric performance can be obtained. Further, it is possible to form a pattern of the piezoelectric film on the substrate by using a mask when spraying the ultrafine particles of the raw material onto the substrate. However, when manufacturing a piezoelectric actuator or the like, it is necessary to take out the piezoelectric film formed by the AD method from the deposition chamber and form an electrode separately. Therefore, when producing a structure in which a plurality of piezoelectric films and electrodes are alternately stacked, the process becomes complicated.

  Patent Document 5 discloses a laminated structure electrode made of one or more materials and having a thickness greater than 0.15 μm as an electrode film suitable for forming a piezoelectric film by a gas deposition method. However, even in this case, it is necessary to sequentially use a sputtering apparatus for forming the electrode film and a gas deposition apparatus for forming the piezoelectric film, so that the process is complicated. Moreover, since an electrode film is formed by sputtering, an arbitrary electrode pattern cannot be formed in a desired region.

  Here, when forming an arbitrary electrode pattern, it is conceivable to use a photolithography technique. However, in that case, a process of forming a resist on the film formation surface is further required, which is complicated. In addition, when there is a step of about 5 μm or more on the film formation surface, the resist cannot be applied uniformly. Therefore, when the film formation surface is not uniform or a pattern with unevenness is formed in the lower layer It is difficult to use a photolithography technique.

Furthermore, Patent Document 6 discloses an array substrate in which a point defect is corrected (repaired) by electrically connecting a pixel electrode related to the point defect to another normal pixel electrode, and a method for manufacturing the array substrate. In order to keep the point defect repaired reliably and easily, and to make the wiring electrical resistance connecting the pixel electrodes sufficiently small, a point defect repair circuit is not provided, and the third harmonic of the YLF laser is provided. It is disclosed that a bridge wiring made of tungsten or the like is formed by laser CVD using waves. In this method, an electrode used for repair is formed by a laser CVD method, but an electrode with high coverage that can also be used as an internal electrode of a laminated structure has not been proposed.
Japanese Patent Laid-Open No. 6-291382 (page 2, FIG. 1) JP 2003-189395 A (page 5) JP 2001-152360 A (first page, FIG. 1) Japanese Patent Laid-Open No. 2000-212766 (first page, FIG. 1) JP 2001-156351 A (first page, FIG. 1) JP 2002-278476 A (first page, FIG. 1)

  In view of the above, the first object of the present invention is to easily manufacture a structure including an insulator (dielectric) and an electrode by a simple process. A second object of the present invention is to provide a film forming method capable of easily forming an arbitrary pattern even on an uneven surface or side surface in the manufacturing process of such a structure. Furthermore, a third object of the present invention is to provide a structure having good performance including an insulator and an electrode by using such a manufacturing process.

  In order to solve the above problems, a film forming apparatus according to the present invention is provided in a film forming chamber in which a holder for holding a substrate on which a structure is formed is disposed, an exhaust unit for exhausting the film forming chamber, and a container. The raw material powder is blown up with gas to generate an aerosol, a nozzle that is disposed in the film forming chamber and that injects the aerosol generated by the aerosol generating unit toward the substrate, and a chemical vapor phase A means for introducing a source gas, which is a precursor of a film forming material used in the growth method, into the film forming chamber, and for reacting the source gas in a predetermined region of the substrate or a structure surface formed on the substrate, Laser light generating means for generating laser light to irradiate the region.

  In addition, the method for manufacturing a structure including an insulator and an electrode according to the present invention includes a step (a) of generating an aerosol by blowing a powder of an insulating material arranged in a container with a gas, and a film forming chamber. A step (b) of forming an insulating layer in a predetermined region on the substrate by spraying the aerosol generated in the step (a) from the nozzle and depositing the powder of the insulating material toward the arranged substrate. And the aerosol is removed by exhausting the film formation chamber, and a source gas which is a precursor of an electrode material used in the chemical vapor deposition method is introduced into the film formation chamber, so that the top surface and / or the side surface of the insulating layer And (c) forming an electrode by irradiating a predetermined region with light.

  Furthermore, a structure including an insulator and an electrode according to the present invention is used in an insulating layer formed by spraying and depositing a powder of an insulating material from a nozzle toward a substrate and a chemical vapor deposition method. And an electrode formed by irradiating a predetermined region on the upper surface and / or side surface of the insulating layer with light in an atmosphere of a source gas which is a precursor of the electrode material.

  According to the present invention, the thick film formation of the insulator by the aerosol deposition method and the thin film formation of the electrode by the CVD method can be performed in one film formation chamber. Therefore, a structure including an insulator and an electrode can be easily manufactured. Further, by using the CVD method, it is not necessary to use a resist, so that an arbitrary film pattern can be formed on the uneven surface or side surface with a small number of processes. Furthermore, a dense and strong insulating thick film can be formed by the aerosol deposition method, and an electrode can be formed with good coverage by the CVD method, so that a structure with good performance including the insulator and the electrode can be obtained. it can.

Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings. The same constituent elements are denoted by the same reference numerals, and the description thereof is omitted.
The film forming apparatus according to this embodiment is an apparatus that can perform both film formation by an aerosol deposition method and film formation by a photo-CVD method. Here, the aerosol is solid or liquid fine particles floating in the gas, and the aerosol deposition method (AD method) is an injection including a raw material powder toward the substrate, This is a film forming method in which a raw material is deposited on the lower layer by collision energy at that time. The thick film formed by the AD method is dense and strong and does not contain impurities such as a binder. Therefore, the AD method is mainly used when forming a film of a brittle material including an insulator or a dielectric, and is particularly suitable for forming a thick ceramic film including a piezoelectric material. In addition, it is known that a piezoelectric body manufactured by the AD method exhibits good piezoelectric performance.

  On the other hand, the CVD (chemical vapor deposition) method is caused by applying energy to the source gas by heat, plasma, or light in the atmosphere of the source gas (precursor) containing the film forming material. This is a thin film forming method in which a film forming material is attached to a substrate or the like by a decomposition reaction. Among them, the photo-CVD method uses photo-excitation energy and has a feature that a film can be formed at a low temperature by reaction of radicals alone.

  FIG. 1 is a schematic view showing a film forming apparatus according to an embodiment of the present invention. This film forming apparatus includes an aerosol gas cylinder 1, transfer pipes 2 a and 2 b, an aerosol generation chamber 3, a raw material gas generation chamber 4, transfer pipes 5 a and 5 b, a bubbling gas cylinder 6, and a film formation chamber 7. And a laser beam generator 8. The film formation chamber 7 is provided with an exhaust pump 9 and a laser beam introduction window 10. Inside the film formation chamber 7, a nozzle 11, a substrate holder 12 that holds the substrate 20, and a movable mask are provided. 13 are arranged.

In the aerosol gas cylinder 1 to the aerosol generation chamber 3, an aerosol used in the aerosol deposition method is generated.
The aerosol gas cylinder 1 is filled with nitrogen (N ₂ ) used as a carrier gas. Further, the aerosol gas cylinder 1 is provided with a pressure adjusting unit 1a, whereby the supply amount of the carrier gas is adjusted. In addition, oxygen (O ₂ ), helium (He), argon (Ar), dry air, or the like may be used as the carrier gas.

  The aerosol generation chamber 3 is a container in which fine powders of raw materials are placed. An aerosol is generated by introducing a carrier gas from the aerosol gas cylinder 1 into the aerosol generation chamber 3 via the transport pipe 2a and blowing up the raw material powder. The generated aerosol is supplied to the nozzle 11 via the transport pipe 2b.

In the bubbling gas cylinder 4 to the raw material gas generation chamber 6, the raw material gas used in the CVD method is generated. Note that materials used in the CVD method will be described later.
The bubbling gas cylinder 4 is provided with an inert gas such as helium (He) or argon (Ar) used for bubbling the liquefied source gas. The bubbling gas cylinder 6 is provided with a mass flow controller 6a. By controlling the amount of gas supplied to the source gas generating chamber 6 by the mass flow controller 6a, the flow rate of the source gas introduced into the film forming chamber 7 is adjusted.

  The liquefied source gas is bubbled by disposing the liquefied source gas in the source gas generating chamber 6 and introducing the carrier gas from the bubbling gas cylinder 4 into the source gas generating chamber 6 through the transport pipe 5a. The raw material gas generated thereby is introduced into the film forming chamber 7 through the transfer pipe 5b.

  Note that a plurality of systems of bubbling gas cylinders 4 to source gas generation chamber 6 may be provided. Thereby, a plurality of types of films having different raw materials can be formed without using the raw material gas generation chamber 6 in common. In that case, a plurality of types of source gases may be introduced into the film formation chamber simultaneously or separately. As a method for generating the source gas, a known method such as a solution vaporization method can be used in addition to bubbling.

  In the film forming chamber 7, thick film formation by the aerosol deposition method and thin film formation by the photo CVD method are performed. The inside of the film forming chamber 7 is evacuated by an exhaust pump 9, whereby the inside of the film forming chamber 7 is cleaned and the degree of vacuum suitable for each film forming is maintained.

The laser beam generator 8 generates a laser beam LB used in the CVD method. The laser beam generator 8 is arranged such that the emitted laser beam LB irradiates the substrate 20 through the laser beam introduction window 10.
The laser beam used in the present embodiment only needs to have energy that can decompose the supplied source gas, or can be heated locally to the extent that the source gas can be thermally decomposed. In the former case, optical CVD by light energy can be performed, and in the latter case, thermal CVD by thermal energy possessed by laser light can be performed. Specifically, various types of laser light generator 8 such as an ArF excimer laser, a KrF excimer laser, a XeCl excimer laser, an argon ion laser, a nitrogen laser, and a YAG laser can be used. Further, as an oscillation mode, either pulse oscillation or continuous oscillation may be used. In this embodiment, an ArF excimer laser is used. Further, by using an optical system such as a condensing lens or a collimating lens, the laser light may be converted into a spot size and the target area may be irradiated.

  Further, the laser beam generator 8 is provided with a laser beam driver 8a. The laser beam driving unit 8a controls the irradiation position of the laser beam LB so that the laser beam LB scans a predetermined region on the substrate 20. This can be realized, for example, by controlling the emission direction of the laser beam LB. Thereby, a thin film can be formed in a desired region on the substrate 20, and a fine pattern can be directly drawn.

  The nozzle 11 disposed in the film formation chamber 7 injects the aerosol supplied from the aerosol generation chamber 3 toward the substrate 20 at a high speed. The nozzle 11 has, for example, an opening having a length of about 5 mm and a width of about 0.5 mm.

  The substrate holder 12 holds a substrate 20 on which a structure is formed. Further, the substrate holder 12 is provided with a holder driving unit 12a, whereby the substrate holder 12 is translated, rotated, or tilted. By controlling the substrate holder driving unit 12a, the relative position between the substrate 20 and the nozzle 11 and the relative position and angle between the substrate 20 and the laser beam LB can be changed three-dimensionally.

  The movable mask 13 is a mask in which an opening having a film formation pattern is formed. In the AD method, a desired pattern can be formed on the substrate 20 by shielding the aerosol with a mask. Further, the movable mask 13 is provided with a movable mask driving unit 13a, whereby the relative position between the substrate 20 and the movable mask 13 can be changed three-dimensionally.

  Further, as shown in FIG. 1, the gas cylinder 14 and the transfer pipe 15 may be provided in the film forming chamber 7. These gas cylinders 14 and the transfer pipe 15 can be used, for example, when introducing a gas for diluting the source gas such as argon gas or a gas for reacting with the source gas such as hydrogen gas.

Next, raw materials used in the CVD method will be described.
In the CVD method, an inorganic simple substance or compound containing a film forming material, or an organic metal or metal complex gas is used as a raw material. Therefore, when forming an electrode film, it is appropriate to use a metal having a compound having a high vapor pressure.

  As a kind of source gas, it is preferable to use a metal halide containing a chloride and a fluoride, an organic metal, or a metal complex. In terms of corrosivity and safety, it is more preferable to use an organic metal (MO) gas than chloride or fluoride. Note that CVD using a metal halide is a film formed by a hydrogen reduction reaction, and is called inorganic CVD. Further, CVD using an organic metal or a metal complex is a method of forming a film by decomposing them to deposit a metal, and is called MOCVD. For details of the source gas that can be used in the CVD method, see Masao Manashita, Seiji Yoshida, “Thin Film Engineering Handbook”, Kodansha Co., Ltd., October 20, 1998, p. See 390-400.

A structure including a piezoelectric body and an electrode was manufactured using the film formation apparatus shown in FIG. The manufacturing process of this structure will be described with reference to FIGS.
First, as shown in FIG. 2A, a substrate 20 on which a bottom electrode 21 was formed was prepared and set on the substrate holder 12 shown in FIG. In this embodiment, 0.5 mm thick Macor (registered trademark) is used as the substrate 20, but silicon (Si), glass, ceramics, or the like can also be used. Here, Macor (registered trademark) is Machinable ceramics (ceramics that can be easily machined) manufactured by Corning, USA. The bottom electrode 21 was produced by depositing, for example, platinum (Pt) having a thickness of about 300 nm on a predetermined region of the substrate 20 using a sputtering method, a vacuum deposition method, or the like. Note that the bottom electrode 21 may be manufactured in the film forming apparatus shown in FIG.

  Moreover, the movable mask 13 was arrange | positioned in the predetermined position. In the present embodiment, SUS (special purpose stainless steel) having a thickness of 0.03 mm in which an opening pattern of 5 mm square is formed is used as the movable mask 13. Further, the inside of the film forming chamber 7 was depressurized to a predetermined pressure (for example, 40 Pa) using the exhaust pump 9, and the inside of the film forming chamber 7 and the substrate 20 were kept at room temperature.

Next, as shown in FIG. 2B, a PZT film 22 was formed using the AD method. That is, a powder (52:48) of niobium oxide (Nb ₂ O ₅ ) added PZT having an average flow diameter of 0.3 μm is placed in the aerosol generation chamber 3 shown in FIG. 1, and nitrogen gas is supplied from the aerosol gas cylinder 1. About 5 SLM (L / min at 0 ° C., 101.3 kPa) was introduced. Thereby, in the aerosol production | generation chamber 3, the powder of PZT was blown up and the aerosol was produced | generated.

This aerosol was supplied to the nozzle 11 via the transport pipe 2 b and sprayed toward the substrate 20. As a result, as shown in FIG. 1B, PZT powder was deposited on the opening of the movable mask 13, and a PZT film 22 was formed on the upper surface of the bottom electrode 21. During film formation, the pressure in the film formation chamber 7 was about 50 Pa.
After forming the PZT film 22 with a thickness of about 30 μm, the film formation chamber 7 was evacuated to about 0.1 Pa, thereby removing the PZT powder and nitrogen gas floating in the film formation chamber 7.

  Next, as shown in FIG. 2C, a two-layer electrode 23 including a titanium (Ti) film 23a and a platinum (Pt) film 23b was formed. Here, platinum is suitable as an electrode material because of its low reactivity with PZT, but its adhesion with PZT is low. For this reason, a titanium film having excellent coverage in a high aspect ratio region and high adhesion to PZT or platinum is disposed under the platinum film. There is no problem because the PZT film is firmly adhered to the upper surface of the platinum film by the AD method. In addition, examples of metals suitable for the PZT electrode include ruthenium (Ru), aluminum (Al), and tungsten (W). In this embodiment, optical MOCVD using an organic metal gas as a source gas is performed.

First, liquefied isoproxy titanium (Ti (i-OC ₂ H ₅ ) ₄ ) serving as a raw material for the titanium electrode was placed in the raw material gas generation chamber 6. Then, by isolating liquefied isoproxy titanium, isoproxy titanium gas was generated and introduced into the film forming chamber 7 through the transfer pipe 5b. Further, argon gas was separately introduced as a dilution gas at about 100 ccm, and the inside of the film forming chamber 7 was kept at about 500 Pa. Next, a laser beam LB with an energy of about 50 mJ was emitted from the laser beam generator 8, and the PZT film 22 was scanned repeatedly at a frequency of 20 Hz. At that time, the laser beam was scanned so that an insulating region remained at one end (right side in the figure) of the PZT film 22. As a result, a titanium film 23a having a thickness of about 20 nm was formed.

Subsequently, the inside of the film formation chamber 7 was evacuated to remove the isoproxy titanium gas and the dilution gas introduced into the film formation chamber 7. Further, platinum (Pt) raw material to become liquefied electrode _{(C 3 H 5) (C} 2 H 5) and Pt are arranged in the raw material gas generation chamber 6, by bubbling _{(C 3 H 5) (C} 2 H 5) Pt A gas was introduced into the film forming chamber 7. Further, argon gas was separately introduced as a dilution gas at about 100 ccm, and the inside of the film forming chamber 7 was kept at about 500 Pa. Next, a laser beam LB was emitted from the laser beam generator 8, and the upper surface of the titanium film 23a was repeatedly scanned at a frequency of 20 Hz, thereby forming a platinum film 23b of about 200 nm. Thereafter, the film formation chamber 7 was evacuated to remove the source gas and the dilution gas. Note that the thickness of the platinum film 23b is increased in this way because, in the later-described AD method, even when the powder sprayed from above bites into the platinum film 23b, the platinum film 23b functions well. This is to make it possible.

  Next, as shown in FIG. 2D, the movable mask 13 and the substrate 20 were separated from each other, and the PZT film 24 was formed by the AD method. Subsequently, as shown in FIG. 2E, a two-layer electrode 25 including a titanium film 25a and a platinum film 25b was formed by a photo-CVD method. At that time, the laser beam was scanned so that an insulating region remained at the other end (left side in the figure) of the PZT film 24. Further, as shown in FIG. 3F, the movable mask 13 was moved, and the PZT film 22 was formed by the AD method.

By repeating the steps shown in FIG. 2C to FIG. 3F, a laminate shown in FIG. 3G was manufactured.
Further, as shown in FIG. 3 (h), a plurality of electrodes 23 are electrically connected to each other by introducing an electrode source gas into the film forming chamber 7 and irradiating the side surfaces of the stacked bodies 21 to 25 with laser light. A side electrode 26 connected to each other and a side electrode 27 electrically connecting the electrode 21 and the plurality of electrodes 25 to each other were formed. At that time, the substrate holder driving unit 12a shown in FIG. 1 was controlled so that the laser light was incident on the laminated body at an angle as close to vertical as possible. Thereby, the side electrodes 26 and 27 with good coverage could be formed.
A structure in which piezoelectric bodies and electrodes are alternately stacked as shown in FIG. 3H can be used as, for example, a piezoelectric actuator.

The composition of the structure thus produced was analyzed using a secondary ion-microprobe mass (SIMS). As a result, it was confirmed that the titanium film contained 0.7 wt% carbon and the platinum film contained 0.4 wt% carbon.
Here, the metal film formed by the optical MOCVD method usually contains a trace amount of carbon (for example, 0.05% by weight or more). Therefore, by examining the composition of the metal film, the metal film is formed by an optical MOCVD method as in the present embodiment, or formed by another method such as a sputtering method. Can be determined. On the other hand, when such an impurity such as carbon is increased (for example, when it is more than 2% by weight), the performance as an electrode is deteriorated. However, as described above, the metal film formed in the film forming apparatus according to the present embodiment contains a very small amount of impurities, and thus can exhibit a good function as an electrode.

  By the way, in the AD method, when the raw material powder is jetted and collided with the lower layer (substrate or electrode film), a phenomenon called “anchoring” in which the raw material powder bites into the lower layer occurs remarkably. The depth of the anchor layer generated by anchoring varies depending on the material of the lower layer and the speed of the powder, but is usually about 10 nm to 100 nm. Therefore, by observing the interface between the substrate and the electrode film, it is possible to determine whether or not the insulator (PZT film) is formed by the AD method as in the present embodiment.

  As described above, according to the present embodiment, both film formation by the AD method and film formation by the photo-CVD method can be performed in one film formation apparatus, so that different types of films are alternately stacked. Even a laminated structure made can be manufactured easily and at low cost. Further, by using the AD method, it is possible to form a high-quality piezoelectric body of 1 mm or less, which is difficult when using a bulk material. In addition, by using a photo-CVD method, a thin film can be formed in a desired region without using a resist. For example, coverage characteristics can be applied to a surface having unevenness of 5 μm or more and a side surface having a high aspect ratio. A good thin film can be easily formed. Therefore, it is possible to manufacture a high-quality structure including an insulator and an electrode while reducing the number of processes.

  In the embodiment of the present invention described above, the side electrodes are formed after laminating a plurality of PZT films and electrodes, but each time an electrode is formed on each PZT film 31, as shown in FIG. The side electrode 32 may be formed. Thus, the side surface can be coated more easily and reliably by performing film formation by the CVD method while the aspect ratio is small.

  The material that can be formed by the CVD method used in this embodiment is not limited to metal. That is, a desired pattern of an insulator or a semiconductor may be formed using a CVD method. For example, instead of forming the electrodes 23 and 25 shown in FIG. 2 (e), instead of forming electrodes on the entire top surface of the PZT film and providing an insulating region for each electrode, the end surfaces of the electrodes are formed using the CVD method. An insulating film is formed. Furthermore, by forming side electrodes so as to cover these insulating films, a structure equivalent to the structure shown in FIG. 3H can be manufactured.

  Furthermore, in this embodiment, the optical CVD method using the optical energy of the laser beam is performed, but the thermal CVD method using the thermal energy of the laser beam may be performed. Even in this case, since only the region irradiated with the laser light is heated, a desired film pattern can be formed.

  Alternatively, ablation or laser annealing may be performed on the insulator previously formed by the AD method by adjusting the output of the emitted laser light. In the former case, for example, the film at an arbitrary position can be excised, such as making a hole in the PZT film. In the latter case, the PZT film is instantaneously melted and crystallized by irradiating pulsed light, so that the temperature rise of the substrate and the previously formed electrode can be suppressed. In any case, since these processes can be performed in one film formation chamber, labor and manufacturing cost can be saved.

  The present invention can be used in a structure including an insulator and an electrode, such as a capacitor, a piezoelectric actuator, a piezoelectric sensor, an ink head of an inkjet printer, and an ultrasonic transducer.

It is a schematic diagram which shows the structure of the film-forming apparatus which concerns on one Embodiment of this invention. FIG. 3 is a diagram for explaining a process of manufacturing a structure including an insulator and an electrode in the film forming apparatus shown in FIG. 1. FIG. 3 is a diagram for explaining a process of manufacturing a structure including an insulator and an electrode in the film forming apparatus shown in FIG. 1. It is a figure for demonstrating another example of the process of producing the structure containing an insulator and an electrode.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Aerosol gas cylinder 1a, 6a Mass flow controller 2a, 2b 5a, 5b, 15 Transfer pipe 3 Aerosol production chamber 4 Raw material gas production chamber 6 Bubbling gas cylinder 7 Deposition chamber 8 Laser beam generation part 9 Exhaust pump 10 Laser beam introduction window 11 Nozzle 12 Substrate holder 12a Substrate holder drive unit 13 Movable mask 13a Movable mask drive unit 14 Gas cylinder 20 Substrate 21, 23, 25 Electrode 22, 24, 31 PZT film 26, 27, 32 Side electrode

Claims (12)

A film forming chamber in which a holder for holding a substrate on which a structure is formed is disposed;
An exhaust means for exhausting the film forming chamber;
Aerosol generating means for generating an aerosol by blowing up the raw material powder disposed in the container with a gas;
A nozzle that is disposed in the film forming chamber and injects the aerosol generated by the aerosol generating means toward the substrate;
Means for introducing a source gas, which is a precursor of a film forming material used in the chemical vapor deposition method, into the film forming chamber;
Laser light generating means for generating laser light so as to irradiate the region in order to react the source gas in a predetermined region of the substrate or a structure surface formed on the substrate;
A film forming apparatus comprising:   The film forming apparatus according to claim 1, further comprising holder driving means for changing a position and / or inclination of the holder.   The film forming apparatus according to claim 1, further comprising an aerosol shielding mask having an opening so that the aerosol sprayed from the nozzle is sprayed only on a predetermined region of the substrate.   The film forming apparatus according to claim 1, further comprising means for changing an irradiation position of the laser beam in order to move an irradiation region of the laser beam generated from the laser beam generating unit. A step (a) of generating an aerosol by blowing up a powder of an insulating material disposed in a container with a gas;
An insulating layer is formed in a predetermined region on the substrate by spraying the aerosol generated in step (a) from the nozzle and depositing the powder of the insulating material toward the substrate disposed in the film formation chamber. Step (b) to perform,
The aerosol is removed by evacuating the deposition chamber, and a source gas that is a precursor of an electrode material used in chemical vapor deposition is introduced into the deposition chamber, and the upper surface of the insulating layer and / or (C) forming an electrode by irradiating light on a predetermined region of the side surface;
A method of manufacturing a structure including an insulator and an electrode.   The raw material gas is removed by evacuating the film formation chamber, and the aerosol generated in the step (a) is sprayed from a nozzle toward the insulating layer on which the electrode is formed, and powder of insulating material The method for producing a structure including an insulator and an electrode according to claim 5, further comprising a step (d) of forming a second insulating layer by depositing. An insulating layer formed by spraying and depositing a powder of insulating material from the nozzle toward the substrate;
An electrode formed by irradiating light on a predetermined region of the upper surface and / or side surface of the insulating layer in an atmosphere of a source gas which is a precursor of an electrode material used in chemical vapor deposition;
A structure including an insulator and an electrode.   The structure including an insulator and an electrode according to claim 7, further comprising a second electrode formed on a second surface of the insulating layer different from a surface on which the electrode is formed. A second insulating layer formed by spraying and depositing a powder of an insulating material from a nozzle toward the insulating layer on which the electrode is formed;
A third electrode formed by irradiating a predetermined region on the second insulating layer with light in the source gas atmosphere;
In the atmosphere of the source gas, the first electrode and the third electrode are electrically connected by irradiating light to a predetermined region on the side surface of the first and / or second insulating layer. A side electrode formed as follows:
A structure including the insulator and the electrode according to claim 8.   The structure including an insulator and an electrode according to any one of claims 7 to 9, wherein the thickness of the first or second insulating layer is 5 µm or more and 1 mm or less.   The insulation according to any one of claims 7 to 10, wherein at least one of the first to third electrodes and the side electrode includes 0.05 wt% or more and 2 wt% or less of a carbon component. A structure including a body and an electrode.   The structure including an insulator and an electrode according to claim 7, wherein the insulating layer includes a piezoelectric material.

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