JP2005262117A - Washing method and washing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a washing method and a washing device by which washing liquid can be uniformly spread on the whole surface of an object to be washed and thereby washing can be appropriately performed. <P>SOLUTION: The washing liquid 3 is spread on the whole surface of the object to be washed 100 by a process in which the washing liquid 3 is made to flow at a first flow rate toward a first direction from a lateral part of a 1st washing liquid feed central point O5 located at the object to be washed 100 to feed the washing liquid 3 to the 1st washing liquid feed central point O5 and a process in which the washing liquid 3 is fed at a second flow rate to a 2nd washing liquid feed central point O6 located in a region Ab formed in a direction opposed to the 1st direction toward the 1st washing liquid feed central point O5. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a cleaning method for an object to be cleaned such as a wafer having a plating process on a substrate and a cleaning apparatus using the cleaning method, and in particular, a cleaning liquid is supplied to the surface of the object to be cleaned from an oblique direction. Even in this case, the present invention relates to a cleaning method and a cleaning apparatus that can uniformly distribute the cleaning liquid over the entire surface of the object to be cleaned and can perform appropriate cleaning.

  For example, a wafer subjected to a plating process on the substrate is subjected to a cleaning process for cleaning the plating solution adhering to the wafer surface after the plating process. This cleaning process is a process necessary to prevent the corrosion because the plating portion formed on the wafer is corroded by the plating solution if the plating solution remains on the wafer surface. In this cleaning process, the cleaning liquid is supplied from the cleaning liquid supply nozzle to the wafer surface, and the object to be cleaned such as the plating liquid existing on the wafer surface is washed away.

  A process for cleaning an object to be cleaned such as a plating solution existing on the wafer surface and cleaning the wafer surface is disclosed in Patent Document 1 and Patent Document 2 shown below.

  Here, although Patent Document 1 and Patent Document 2 do not describe a specific method for supplying the cleaning liquid to the wafer surface, the method described below is adopted by an apparatus as shown in FIGS. It is common.

  200 shown in FIG. 8 shows the plane of the wafer plated on the substrate, and FIG. 9 shows the state shown in FIG. 8 viewed from the lateral direction (X1-X2 direction in FIG. 8). It shows the state. As shown in FIGS. 8 and 9, a hollow nozzle 206 is provided above a side portion (Y1 direction side in the drawing) of the wafer 200, and from a discharge port 211 formed at the tip of the nozzle 206, A cleaning solution 203 is supplied to the upper surface 200a of the wafer 200 obliquely downward in the Y2 direction. The cleaning liquid 203 cleans the upper surface 200a of the wafer 200 and cleans and removes an object to be cleaned such as a plating liquid.

  In order to uniformly distribute the cleaning liquid to the upper surface 200a of the wafer 200 and to perform the cleaning of the wafer 200 appropriately, the vertical direction (see FIG. 8) from the center point O1 (see FIG. 8) of the upper surface 200a of the wafer 200. It is preferable to perform the cleaning by positioning the discharge port 211 above the Z direction) and supplying the cleaning liquid in a vertical direction from the discharge port 211 toward the center point O1. However, there are many cases where components such as other devices exist above the wafer 200, and it is often difficult to secure a space for providing the nozzle 206 above the wafer 200. . Therefore, as shown in FIGS. 8 and 9, the nozzle 206 is provided so as to be positioned above the lateral portion of the wafer 200, and the cleaning liquid 203 is supplied from the nozzle 206 toward the center point O1. Generally done.

On the other hand, in the method shown in FIG. 9, when the supply amount of the cleaning liquid 203 supplied to the upper surface 200a of the wafer 200 is increased, the flow rate of the cleaning liquid 203 in the region Af and the flow rate of the cleaning solution 203 in the region Ab are A further difference occurs. Therefore, the cleaning efficiency of the wafer 200 is improved by increasing the supply amount of the cleaning liquid 203, and the difference between the flow rate of the cleaning liquid 203 in the region Af and the flow rate of the cleaning solution 203 in the region Ab is minimized. In order to do this, as shown in FIG. 10, two nozzles 206 are provided in the lateral direction (X direction) with respect to the wafer 200 to form two horizontal stations, and the two nozzles 206a and 206b have the same flow rate. It is also conceivable to improve the cleaning efficiency of the upper surface 200a of the wafer 200 by supplying the cleaning liquid 203 to the upper surface 200a of the wafer 200. In the cleaning method shown in FIG. 10, the cleaning liquid 203 from the nozzle 206a is supplied to the cleaning liquid supply center point O2 located on the upper surface 200a of the wafer 200, and the cleaning liquid 203 from the nozzle 206b is positioned on the upper surface 200a of the wafer 200. Is supplied to the cleaning liquid supply center point O3. In the method shown in FIG. 10, since the cleaning liquid 203 is supplied by two nozzles, the flow rate of the cleaning liquid 203 per nozzle 206a, 206b can be reduced, so that the flow rate of the cleaning liquid 203 in the region Af, The difference from the flow rate of the cleaning liquid 203 in the region Ab can be reduced. Moreover, since the supply amount of the cleaning liquid 203 can be increased as a whole, the cleaning efficiency can be improved.
JP 2000-256897 A JP 2001-316864 A

  However, in the cleaning method shown in FIGS. 8 and 9, the nozzle 206 is provided so as to be positioned above the lateral portion of the wafer 200, and the cleaning liquid 203 is directed from the Y1 direction of the wafer 200 to the Y2 direction of the drawing. Therefore, the following problems occur. That is, as shown in FIG. 8 and FIG. 9, the cleaning liquid 203 in the region Af on the Y2 direction side, which is the traveling direction of the cleaning liquid 203, with the central point O <b> 1 being the central point of the cleaning liquid 203 falling as a boundary. The flow velocity V1 is faster than the flow velocity V2 in the region Ab on the Y1 direction side, which is the direction opposite to the traveling direction of the cleaning liquid 203.

  Therefore, the cleaning solution 203 easily spreads over the region Af, and the plating solution adhering to the upper surface 200a of the wafer 200 is easily washed away. However, the cleaning solution 203 hardly spreads over the region Ab, and the upper surface of the wafer 200 is removed. The plating solution adhering to 200a is difficult to be removed by washing. Therefore, in the region Ab, there is a problem that the upper surface 200a of the wafer 200 is corroded by the plating solution remaining without being cleaned.

  On the other hand, in the cleaning method shown in FIG. 10, similarly to the cleaning methods shown in FIGS. 8 and 9, the region on the Y2 direction side that is the traveling direction of the cleaning liquid 203 with the cleaning liquid supply center points O2 and O3 as a boundary. Since the flow velocity V1 of the cleaning liquid 203 at Af is faster than the flow velocity V2 in the region Ab on the Y1 direction side in the drawing, which is the direction opposite to the traveling direction of the cleaning liquid 203, the cleaning liquid 203 easily spreads over the region Af. Although the plating solution adhering to the upper surface of the wafer 200 is easily cleaned and removed, the cleaning solution 203 is difficult to spread in the region Ab, and the plating solution adhering to the upper surface 200a of the wafer 200 is difficult to be cleaned and removed. Therefore, in the region Ab, there is a problem that the upper surface 200a of the wafer 200 is corroded by the plating solution remaining without being cleaned.

  In addition to the above problem, the cleaning liquid 203 supplied from the nozzle 206a is diffused to the upper surface 200a of the wafer 200 with the cleaning liquid supply center point O2 as the center, as indicated by a dotted line shown in the figure. . On the other hand, the cleaning liquid 203 supplied from the nozzle 206b diffuses to the upper surface 200a of the wafer 200 as indicated by the diffusion line, with the cleaning liquid supply center point O3 as the center.

  At this time, the cleaning liquid 203 supplied from the nozzle 206a and the cleaning liquid 203 supplied from the nozzle 206b interfere with each other in an interference area 215 indicated by cross-hatching in FIG. 203 and the cleaning solution 203 stagnate, and the plating solution adhering to the upper surface 200a of the wafer 200 is difficult to be removed by cleaning. Therefore, the interference region 215 has a problem that the upper surface 200a of the wafer 200 is corroded by the plating solution remaining without being cleaned.

  The present invention solves the above-described conventional problems, and even when the cleaning liquid is supplied to the wafer surface from an oblique direction, the cleaning liquid can be uniformly distributed over the entire wafer surface, and the cleaning can be performed appropriately. The present invention relates to a possible cleaning method and a cleaning apparatus.

The cleaning method of the present invention has the following steps.
(A) Supplying the cleaning liquid to the first cleaning liquid supply central point by flowing the cleaning liquid at a first flow rate in the first direction from the side of the first cleaning liquid supply central point located on the object to be cleaned. And a process of
(B) supplying the cleaning liquid at a second flow rate to a second cleaning liquid supply central point located in a region formed in a direction opposite to the first direction with respect to the first cleaning liquid supply central point.

  In this case, it is preferable to configure the second flow rate to be smaller than the first flow rate in the step (b).

  In the step (b), the cleaning liquid can be supplied to the second cleaning liquid supply central point by flowing in the first direction.

Moreover, the cleaning apparatus of the present invention has a holder for holding the object to be cleaned, a first cleaning liquid supply unit for supplying a cleaning liquid to the object to be cleaned, and a second cleaning liquid supply unit, and uses the cleaning method. In the cleaning device,
The first cleaning liquid supply means supplies the cleaning liquid at a first flow rate to the first cleaning liquid supply central point located on the object to be cleaned, and the second cleaning liquid supply central point is the second cleaning liquid supply central point. The cleaning liquid supply means supplies the cleaning liquid at the second flow rate.

  In this case, a center line that bisects the width direction of the first cleaning liquid supply means and a center line that bisects the width direction of the second cleaning liquid supply means are provided so as to overlap in the vertical direction. Can be configured as

  Further, the first cleaning liquid has a positional relationship in which the flow direction of the cleaning liquid supplied from the first cleaning liquid supply means is the same as the flow direction of the cleaning liquid supplied from the second cleaning liquid supply means. A supply means and the second cleaning liquid supply means can be provided.

  In the present invention, when the cleaning liquid is supplied to the object to be cleaned by the first cleaning liquid supply means, the second cleaning liquid is flowed from the side of the object to be cleaned, so that the second cleaning liquid is also applied to an area where the cleaning liquid is difficult to spread. By supplying the cleaning liquid from the cleaning liquid supply means, it is easy to spread the cleaning liquid over the entire object to be cleaned.

  Therefore, even in a region where it is difficult for the cleaning liquid to spread, it is easy to clean and remove the object to be cleaned, and the yield of the wafer 100 can be improved.

  1 is a block diagram showing a cleaning device of the present invention, FIG. 2 is a partial perspective view of the cleaning device shown in FIG. 1, FIG. 3 is a plan view of FIG. 2, and FIG. 4 is a side view of FIG. It is an arrow view seen from (X2 direction).

  A cleaning apparatus 1 shown in FIGS. 1 to 4 is a cleaning apparatus for cleaning a wafer 100 or the like on which a plating process has been performed on a substrate, and includes a holder 2 for holding the wafer 10 and the wafer 10. A storage tank 4 for storing the cleaning liquid 3 for cleaning and a supply pipe 5 for supplying the cleaning liquid 3 stored in the storage tank 4 to the wafer 10 are provided. The supply pipe 5 is provided with a liquid feeding means 9 comprising a pump or the like. The supply pipe 5 branches in two directions on the holder 2 side of the liquid feeding means 9, and the first supply pipe 5a and the first supply pipe 5a. 2 branches to the supply pipe 5b. As shown in FIG. 1, a first nozzle 6a, which is the first cleaning liquid supply means of the present invention, is provided at the tip of the first supply pipe 5a, and the tip of the second supply pipe 5b is provided at the tip of the present invention. A second nozzle 6b which is a second cleaning liquid supply means is provided.

  The first supply pipe 5a is provided with a first valve 10a. The first supply pipe 5b is provided with a second valve 10b. The first nozzle 6a is formed in a hollow shape, the tip is opened as an open end, and the first discharge port 11a is formed. Similarly, the second nozzle 6b is also formed in a hollow shape, the tip is opened as an open end, and the second discharge port 11b is formed.

The cleaning liquid 3 stored in the storage tank 4 is sent in the direction of the first nozzle 6 a and the second nozzle 6 b through the supply pipe 5 by the liquid feeding means 9. In place of the liquid feeding means 9, for example, the inside of the storage tank 4 is pressurized with an inert gas such as N ₂ gas, and is stored in the storage tank 4 by the pressure of the inert gas. The cleaning liquid 3 may be sent in the direction of the first nozzle 6a and the second nozzle.

  For example, pure water or ultrapure water can be used as the cleaning liquid 3. Also, any known liquid such as an acidic liquid can be used depending on the purpose. The cleaning liquid 3 is sent to the first nozzle 6a and the second nozzle 6b by the liquid feeding means 9 through the first supply pipe 5a and the second supply pipe 5b, and the first discharge port 11a and the second discharge pipe 11b. It is discharged from the discharge port 11 b and supplied to the upper surface 100 a of the wafer 100. By supplying the cleaning liquid 3 to the upper surface 100a of the wafer 100, an object to be cleaned such as a plating solution adhering to the upper surface 100a of the wafer 100 is cleaned and removed. At this time, the flow rate of the cleaning liquid 3 is controlled by the first valve 10a and the second valve 10b, and the amount of the cleaning liquid 3 supplied to the wafer 100 can be arbitrarily changed.

  Around the holder 2, a recovery unit 7 for recovering the cleaning liquid 3 after cleaning the upper surface 100a of the wafer 100 is formed, and the cleaning liquid 3 after cleaning recovered by the recovery unit 7 is It is made into a waste liquid and is conveyed to a waste liquid processing means (not shown) via the pipe 8 and processed.

  The cleaning apparatus 1 supplies the cleaning liquid 3 to the upper surface 100a of the wafer 100 from the first discharge port 11a and the second discharge port 11b formed in the first nozzle 6a and the second nozzle 6b. It has the characteristics. This feature will be described below.

  As shown in FIGS. 2 to 4, the first nozzle 6 a and the second nozzle 6 b are provided so as to be positioned above the side (Y1 direction in the drawing) portion of the wafer 100. Further, as shown in FIG. 3, when viewed from the plane, a center line C1-C1 that bisects the width direction of the first nozzle 6a and a center line that bisects the second nozzle 6b in the width direction. The first nozzle 6a and the second nozzle 6b are provided so as to overlap with the C2-C2 line. In other words, the first nozzle 6a and the second nozzle 6b are provided in two vertical rows side by side in the vertical direction (Z direction in the drawing).

  As shown in FIG. 3, the cleaning liquid 3 discharged from the first discharge port 11a formed in the first nozzle 6a is directed to the first cleaning liquid supply center point O5 located on the upper surface 100a of the wafer 100. Supplied. In the embodiment shown in FIG. 3, the first cleaning liquid supply center point O <b> 5 is configured at the same position as the center point O <b> 10 of the upper surface 100 a of the wafer 100. Here, in the cleaning apparatus 1, since the first nozzle 6 a is provided so as to be positioned above the lateral portion of the wafer 100, the cleaning liquid 3 moves from the Y1 direction of the wafer 100 to the Y2 direction ( As shown in FIG. 3, Y2 is the direction in which the cleaning liquid 3 travels, with the first cleaning liquid supply center point O5 being the central point of the cleaning liquid 3 falling, as shown in FIG. The flow velocity V1 of the cleaning liquid 3 in the direction area Af is faster than the flow velocity V2 in the area Ab on the Y1 direction side in the direction opposite to the traveling direction of the cleaning liquid 3 (second direction).

  Therefore, the cleaning liquid 3 is likely to diffuse and spread over the area Af. 3 is a first diffusion line schematically representing a state in which the cleaning liquid 3 supplied from the first nozzle 6a diffuses on the upper surface 100a of the wafer 100. As indicated by the first diffusion line, the cleaning liquid 3 supplied from the first nozzle 6a diffuses while spreading the upper surface 100a of the wafer 100 in the Y2 direction in the drawing.

  Accordingly, an object to be cleaned such as a plating solution adhering to the upper surface 100a of the wafer 100 is easily cleaned and removed. However, the cleaning solution 3 is difficult to spread in the region Ab, and the cleaning solution 3 is difficult to spread. An object to be cleaned such as a plating solution adhering to the upper surface 100a of 100 is difficult to be removed by cleaning. Therefore, only by supplying the cleaning liquid 3 from the first nozzle 6a, the upper surface 100a of the wafer 100 is corroded by the plating liquid remaining without being cleaned in the region Ab, and the yield of the wafer 100 is reduced. Easy to do.

  However, in the cleaning apparatus 1 of the present invention, the cleaning liquid 3 is supplied from the second nozzle 6b toward the second cleaning liquid supply center point O6 located in the region Ab where the cleaning liquid 3 is difficult to spread. The stagnation of the cleaning liquid 3 is reduced, and the cleaning liquid 3 is easily distributed. A broken line shown in FIG. 3 is a second diffusion line schematically representing a state in which the cleaning liquid 3 supplied from the second nozzle 6 b diffuses on the upper surface 100 a of the wafer 100. As indicated by the second diffusion line, the cleaning liquid 3 supplied from the second nozzle 6b diffuses while spreading over the entire area Ab.

  Therefore, also in the region Ab, the object to be cleaned such as the plating solution can be easily cleaned and removed. For example, corrosion due to the plating solution can be suppressed and the yield of the wafer 100 can be improved.

  In the cleaning apparatus 1, the flow rate of the cleaning liquid 3 supplied from the first nozzle 6 a to the upper surface 100 a of the wafer 100, and the flow rate of the cleaning liquid 3 supplied from the second nozzle 6 b to the upper surface 100 a of the wafer 100. Are different, and the flow rate from the first nozzle 6a is larger than the flow rate from the second nozzle 6b. If the flow rate from the first nozzle 6a and the supply amount from the second nozzle 6b are the same, the cleaning liquid from the first nozzle 6a and the cleaning liquid 3 from the second nozzle 6b interfere with each other. As a result, the cleaning liquid 3 does not sufficiently diffuse into the upper surface 100a of the wafer 100, and the object to be cleaned such as the plating liquid cannot be sufficiently cleaned and removed.

  However, when the flow rate of the cleaning liquid 3 from the first nozzle 6a is different from the flow rate of the cleaning liquid 3 from the second nozzle 6b as in the cleaning device 1 of the present invention, the flow from the first nozzle 6a is different. Since the interference between the cleaning liquid 3 and the cleaning liquid 3 from the second nozzle 6b can be suppressed, the cleaning liquid 3 can be easily diffused over the entire upper surface 100a of the wafer 100. It is easy to wash and remove objects. Therefore, it is possible to effectively prevent the upper surface 100a of the wafer 100 from being corroded by the plating solution remaining on the upper surface 100a of the wafer 100.

  The flow rate of the cleaning liquid 3 supplied to the upper surface 100a of the wafer 100 from the first nozzle 6a is, for example, 10 l / min, and the flow rate of the cleaning liquid 3 supplied to the upper surface 100a of the wafer 100 from the second nozzle 6b. Is, for example, 4 l / min.

  FIG. 5 shows an example when the upper surface 100a of the wafer 100 is cleaned with the cleaning liquid 3 using the cleaning method of the present invention, and comparative examples 1 to 3 when the wafer 100 is cleaned by the conventional method shown in FIG. Is a table showing the results of observing the corrosion state of the upper surface 100a of the wafer 100. In the example shown in FIG. 5 and Comparative Examples 1 to 3, the result is that the cleaning liquid 3 is cleaned using pure water. Here, in FIG. 5, in the embodiment, the first nozzle 6a and the second nozzle 6b are provided in two vertical rows as shown in FIGS. 3 and 4, and the flow rate of the cleaning liquid from the first nozzle 6a is 10 l / min, The flow rate from the second nozzle 6b was observed as 4 l / min. On the other hand, in the first to third comparative examples, the first nozzle 6a and the second nozzle 6b are provided in two horizontal rows as shown in FIG. 10, the flow rate of the cleaning liquid from the first nozzle 6a is 10 l / min, and the second nozzle The flow rate from 6b was observed as 10 l / min. Note that the measurement locations of the upper surface 100a of the wafer 100 were 6 in Comparative Example 1 and Comparative Example 3, 12 in Comparative Example 2, and 12 in Example. Moreover, in the table | surface shown in FIG. 5, it shows that corrosion was recognized when it shows with "(triangle | delta)", and shows that corrosion was not recognized by "(circle)".

  As shown in FIG. 5, in Comparative Examples 1 to 3, the wafer 100 was corroded, whereas in the example, the wafer 100 was not corroded.

  As described above, in the present invention, the cleaning liquid 3 can be uniformly and sufficiently distributed on the upper surface 100a of the wafer 100, and the cleaning effect can be improved.

  Note that the cleaning liquid supply center point O5 of the cleaning liquid 3 supplied from the first nozzle 6a is preferably configured at the same position as the center point O10 of the upper surface 100a of the wafer 100. One cleaning liquid supply center point O5 may be configured to be different from the center point O10. For example, when the flow rate of the cleaning liquid 3 from the first nozzle 6a is higher than 10 l / min, the flow rate of the cleaning liquid 3 flowing on the upper surface 100a of the wafer 100 is increased, and therefore the cleaning liquid supply center point O5 is set. Further, it is possible to easily reach the upper surface 100a of the wafer 100 even at a position closer to the first nozzle 6a (Y1 direction in FIG. 3) than the center point O10.

  On the other hand, when the flow rate of the cleaning liquid 3 from the first nozzle 6a is less than 10 l / min, the flow rate of the cleaning liquid 3 flowing to the upper surface 100a of the wafer 100 becomes slow, so the first cleaning liquid supply If the center point O5 is on the opposite side of the center point O10 to the first nozzle 6a side (Y2 direction side in FIG. 3), the cleaning liquid 3 is also applied to the wafer 100 at a location away from the first nozzle 6a. It becomes easy to reach the upper surface 100a of the. In this case, in the region Ab closer to the first nozzle 6a than the first cleaning liquid supply center point O5, the flow rate of the cleaning liquid 3 supplied from the first nozzle 6a is slow, so that the cleaning liquid 3 is difficult to spread. Therefore, by increasing the supply flow rate of the cleaning liquid 3 from the second nozzle 6b to be greater than 4 l / min, the cleaning liquid 3 can be spread over the region Ab.

  In the present invention, as shown in FIG. 6, the second nozzle 6 b is provided at an arbitrary position on the vertical direction side (X1-X2 direction side) of the wafer 100, and the region Ab from the vertical direction side of the wafer 100 is provided. Alternatively, the cleaning liquid 3 may be supplied from the second nozzle 6b.

  However, as shown in FIGS. 2 to 4, the first nozzle 6 a and the second nozzle 6 b are provided in a vertical positional relationship so that they overlap, and the cleaning liquid 3 from the first nozzle 6 a and the first nozzle 6 a It is preferable that the direction in which the cleaning liquid 3 flows from the two nozzles 6b be the same because the interference of the cleaning liquid 3 between the region Af and the region Ab can be reduced.

  Further, when the first nozzle 6a and the second nozzle 6b are provided in a vertical two-position relationship, both the first nozzle 6a and the second nozzle 6b can be easily held by a fixing means such as a clamp, It is difficult to reliably maintain the fixed posture (angle) of the first nozzle 6a and the second nozzle 6b.

  Further, as shown in FIG. 7, the cleaning liquid 3 can be flowed in a direction (X1-X2 direction) that intersects with the arrangement direction (Y1-Y2 direction) of the plating processing unit 20 formed on the upper surface 100a of the wafer 100. As such, it is preferable to provide the first nozzle 6a. Furthermore, it is preferable that the second nozzle 6 b is also provided so that the cleaning liquid 3 can flow in a direction intersecting with the arrangement direction of the plating units 20. When the first nozzle 6a and the second nozzle 6b are provided in this way, the longitudinal direction of an element (not shown) formed in the plating processing unit 20 (for example, the height direction when the element is a thin film magnetic head) ) And the coaxial direction, the cleaning liquid 3 can flow. Therefore, it is easy to suppress the element from being damaged by the water pressure of the cleaning liquid 3.

The block diagram which shows the washing | cleaning apparatus of this invention, The partial perspective view of the said washing | cleaning apparatus shown in FIG. The partial top view of the washing | cleaning apparatus shown in FIG. FIG. 1 is a partial arrow view of the cleaning device shown in FIG. The figure which shows the result of having observed the wafer upper surface at the time of using the wafer upper surface at the time of using the cleaning method of this invention, and the cleaning method of a comparative example, The partial top view which shows the modification of this invention, Explanatory drawing of the preferred flow direction of the cleaning liquid, Partial plan view showing a conventional cleaning device, Partial arrow view showing a conventional cleaning device, Partial plan view showing a conventional cleaning device,

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Cleaning apparatus 2 Holder 3 Cleaning liquid 4 Storage tank 5 Supply pipe 6a 1st nozzle 6b 2nd nozzle 7 Collection | recovery part 8 Piping 9 Liquid sending means 10a 1st valve 10b 2nd valve 11a 1st discharge port 11b 2nd discharge port 100 Wafer 100a top surface

Claims (6)

A cleaning method comprising the following steps.
(A) Supplying the cleaning liquid to the first cleaning liquid supply central point by flowing the cleaning liquid at a first flow rate in the first direction from the side of the first cleaning liquid supply central point located on the object to be cleaned. And a process of
(B) supplying the cleaning liquid at a second flow rate to a second cleaning liquid supply central point located in a region formed in a direction opposite to the first direction with respect to the first cleaning liquid supply central point.   The cleaning method according to claim 1, wherein in the step (b), the second flow rate is made smaller than the first flow rate.   The cleaning method according to claim 1 or 2, wherein, in the step (b), the cleaning liquid is supplied toward the second cleaning liquid supply center point by flowing in the first direction. A holder for holding an object to be cleaned, a first cleaning liquid supply means for supplying a cleaning liquid to the object to be cleaned, and a second cleaning liquid supply means, and cleaning using the cleaning method according to claim 1. In the device
The first cleaning liquid supply means supplies the cleaning liquid at a first flow rate to the first cleaning liquid supply central point located on the object to be cleaned, and the second cleaning liquid supply central point is the second cleaning liquid supply central point. The cleaning liquid is supplied at a second flow rate by the cleaning liquid supply means.   The center line that bisects the width direction of the first cleaning liquid supply means and the center line that bisects the width direction of the second cleaning liquid supply means are provided so as to overlap in the vertical direction. 4. The cleaning apparatus according to 4.   The first cleaning liquid supply means has a positional relationship in which the flow direction of the cleaning liquid supplied from the first cleaning liquid supply means and the flow direction of the cleaning liquid supplied from the second cleaning liquid supply means are the same direction. The cleaning apparatus according to claim 4, further comprising: a second cleaning liquid supply unit.

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