JP2005199544A - Plastic film, method for manufacturing the same, apparatus for manufacturing the same, and flexible circuit board using the plastic film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To inexpensively provide a flexible printed circuit board which is very firm in adhesion and capable of fine patterning by etching. <P>SOLUTION: After plasma treatment in a nitrogen atmosphere to make the surface roughness of a plastic film 2-5 nm, a metal comprising copper or an alloy containing copper as a main component is melted. A first thin metal film (which is) 10-100 Å in thickness is formed on the plastic film. With the use of an inert gas, the metal comprising copper or the alloy mainly containing copper is melted on the first thin metal film under plasma discharge, and a second thin metal film is vapor-deposited. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a plastic film for coating a metal thin film after plasma treatment, a method for manufacturing the same, an apparatus for manufacturing the same, and a flexible circuit board using the plastic film.

  Conventionally, in order to form metal particles on the surface of a plastic film by the PVD method, sputtering or ion plating is performed on the film using an inert gas such as argon having a high purity. However, these methods cannot perform metal film formation with good adhesion.

  Recently, a method of better adhesion has been proposed for attaching metal particles to the surface of a plastic film by performing a plasma treatment.

As an example, a first step of running a plastic film that has been subjected to a low-temperature plasma treatment with oxygen gas without contacting it with the atmosphere, and plasma of an inert gas such as argon, xenon, and helium containing 0.01 to 10% oxygen. A manufacturing method comprising a second step of depositing metal particles that have passed through the plastic film to a thickness of 1 μm or less on the plastic film and a third step of depositing metal particles that have passed through a high purity inert gas plasma on the surface thereof. There is. Thereby, there is a description that a metal coating film having excellent adhesion can be provided (for example, see Patent Document 1).
Japanese Unexamined Patent Publication No. 64-8264

However, in the conventional configuration, since the oxide film formed by oxygen plasma is included in the interface between the film and the metal film, by repeating the high temperature standing, the copper oxide Cu ₂ O having good adhesion is changed to copper oxide CuO having poor adhesion. It changed and had the serious subject that adhesiveness fell.

  SUMMARY OF THE INVENTION The present invention solves the conventional problems, and a plastic film that maintains high adhesion as compared with the conventional method even after repeated high-temperature standing, a manufacturing method thereof, a manufacturing apparatus thereof, and a flexible circuit board using the plastic film The purpose is to provide.

In order to solve the above-described conventional problems, the plastic film manufacturing method of the present invention is a plastic film manufacturing method for coating a metal thin film after performing plasma processing on the plastic film surface. A plasma treatment step in a nitrogen gas atmosphere of 2 nm to 5 nm; and after the plasma treatment, a metal made of copper or an alloy containing copper as a main component is melted and evaporated to form a first metal on the plastic film surface A step of forming a thin film, and then using an inert gas, a metal comprising copper or an alloy containing copper as a main component under plasma discharge is melted and deposited on the first metal thin film to form a second Forming a metal thin film.

  The method for producing a plastic film of the present invention includes a step of dehydrating the plastic film in a vacuum, a step of performing a plasma treatment on the surface of the plastic film so that a roughening range is 2 nm to 5 nm, and the plasma treatment. Thereafter, a metal made of copper or an alloy containing copper as a main component is melted and deposited to form a metal thin film on the plastic film, and further, an inert gas is used to form the copper under an inert gas plasma discharge. Alternatively, the method includes a step of melting and depositing a metal made of an alloy containing copper as a main component and depositing a metal thin film on the plastic film.

  Further, the plastic film of the present invention is a dehydration treatment of the plastic film in a vacuum, a plasma treatment is performed on the surface of the plastic film so that a roughening range is 2 nm to 5 nm, and copper or copper is a main component after the plasma treatment. A metal thin film is formed on the plastic film by melting and vapor-depositing a metal made of the alloy, and copper or an alloy containing copper as a main component under an inert gas plasma discharge using an inert gas. A metal thin film is formed on the plastic film by melting and vapor-depositing a metal composed of

  In addition, the flexible circuit board of the present invention is a dehydration treatment of a plastic film in a vacuum, and a plasma treatment on the surface of the plastic film with a roughening range of 2 nm to 5 nm. After the plasma treatment, copper or copper mainly A metal composed of an alloy as a component is melted and vapor-deposited to form a first metal thin film having a thickness of 10 to 100 mm on the plastic film, and further, an inert gas is used under the inert gas plasma discharge. Then, a metal composed of copper or an alloy containing copper as a main component is melted and deposited to form a second metal thin film having a thickness of 3000 to 5000 mm, and a predetermined thickness is formed on the second metal thin film. A third metal conductor layer is formed.

  The plastic film manufacturing apparatus of the present invention is a plastic film manufacturing apparatus that coats a metal thin film after performing plasma treatment on the plastic film surface. The surface roughness of the plastic film surface is 2 nm to 5 nm in a nitrogen gas atmosphere. After the plasma treatment, a first composition for forming a first metal thin film having a predetermined thickness on the plastic film surface by melting and vapor-depositing a metal made of copper or an alloy containing copper as a main component. Using a film chamber and then an inert gas, a second metal thin film is formed by melting and vapor-depositing a metal made of copper or a copper-based alloy under plasma discharge on the first metal thin film. And a second film formation chamber to be formed.

  INDUSTRIAL APPLICABILITY According to the plastic film, the manufacturing method and the manufacturing apparatus thereof, and the flexible circuit board and the plastic film apparatus to which the plastic film of the present invention is applied, the plastic film and the flexible circuit board that have very strong adhesion and can be formed into a fine pattern by etching. Can provide. For this reason, the flexible circuit board by this invention can be utilized for all the electronics fields. For example, the present invention can be applied to a wiring board in which bonding such as TAB, COF, and PGA is indispensable from a general flexible circuit board. In addition, a flexible circuit board capable of high-density wiring boards and high-frequency boards in this field can be realized.

  DESCRIPTION OF EMBODIMENTS Embodiments of a plastic film, a manufacturing method thereof, a manufacturing apparatus thereof, a flexible circuit board and a plastic film manufacturing apparatus to which the plastic film of the present invention is applied will be described below in detail with reference to the drawings.

  FIG. 1 is a diagram showing an apparatus configuration example of a plastic film manufacturing apparatus according to the present invention.

  In FIG. 1, 1 is a vacuum chamber, 2 is an unwinding roll as an unwinding part, 3 is a winding roll as a winding part, 4 is a film heating means (IR heater), and 5a and 5b are for guiding the film. The first electrode and the second electrode, which have a cylindrical shape and have irregularities formed on the surface in contact with the film, and at least a part of the side surface of the first electrode 5a are provided. In order to supply high-frequency power to the part, there are high-frequency power sources 6a and 6b and matching boxes 7a and 7b, 8a and 8b are evaporation sources, 8c is a third electrode, 9a 9b are gas supply units, and the thin film applying unit is constituted by these. 10a to 10c are shielding plates, 11a and 11b are guide rolls, 12a to 12d are vacuum pumps, 13 is a plastic film (herein, as a plastic film used in the present invention, Kapton (Toray DuPont Co., Ltd.), Upirex (Ube Industries Co., Ltd.), Apical (Kanebuchi Chemical Industry Co., Ltd.) and other commercially available product names are used.

  The side where the unwinding roll 2 is placed in the part separated by the shielding plate 10 a in the vacuum chamber 1 is called a film chamber 14. The part separated by the shielding plates 10a and 10c and provided with the evaporation source 8b is called a film forming chamber 15a. The side on which the thin film application unit is provided is called a film formation chamber 15b. A portion separated by the shielding plate 10b and provided with an electrode for plasma processing is called a plasma processing chamber 16. The film chamber 14, the film forming chambers 15a and 15b, and the plasma processing chamber 16 are evacuated by vacuum pumps 12a, 12d, 12b, and 12c, respectively.

  Next, the manufacturing process of the present invention will be described using the manufacturing apparatus of FIG. 1 and the flowchart shown in FIG.

In step 1, the plastic film 13 unwound from the unwinding roll 2 is evacuated to 10 ⁻³ Pa or less by the vacuum pump 12a.

Next, in step 2, heating / dehydration treatment is performed. That is, the moisture adhering to the surface of the plastic film 13 and the moisture adsorbed inside the plastic film 13 are processed by the film heating means 4 in the process from the unwinding roll 2 to the second electrode 5b. Can be gasified by heating. The gasified moisture is exhausted by the vacuum pump 12a and exhausted so that the partial pressure of water is 10 ⁻⁴ Pa or less. The water pressure was measured using a quadrupole mass spectrometer. Thereby, it can prevent that the water | moisture content gasified diffuses and adheres again to the inside of a vacuum chamber, or a guide roll.

Next, in step 3, the plastic film 13 is plasma treated. That is, the plastic film 13 that has been heated and dehydrated passes through the second electrode 5b for plasma processing. Nitrogen gas is introduced into the plasma processing chamber 16 from the gas supply unit 9b, and the degree of vacuum in the plasma processing chamber 16 is maintained in the range of 10 ⁻³ Pa to 10 ⁻¹ Pa. A frequency of 13.56 MHz and a power of 150 W to 1 kW are applied from the high-frequency power source 6b to the second electrode 5b through the matching box 7b. In the plasma processing chamber 16, a glow discharge is generated between the second electrode 5b and the third electrode 8c, and a negative induced direct current of about 200 V to about 1000 V is generated in the vicinity of the plastic film 13 on the second electrode 5b. A voltage is generated.

  In the plasma processing chamber 16, the nitrogen gas ionized under the glow discharge bombards the surface of the plastic film 13 and is bombarded so that the surface roughness RMS is 2 nm to 5 nm.

  The surface roughness was measured using an atomic force microscope (AFM) and the measurement range was about 1 μm square.

  Further, the nitrogen gas ionized under the glow discharge strikes atoms constituting the plastic film 13 and, for example, breaks a bond between carbon and hydrogen or a bond between nitrogen and hydrogen. Functional groups that are chemically reactive are formed. That is, the functional group is chemically bonded to the vapor deposition particles of the vapor deposition material to form a vapor deposition film with good adhesion.

  Here, the inventor examined not only nitrogen gas but also argon gas as a gas to be introduced into the plasma treatment. As a result, the argon gas ionized under glow discharge bombards the surface of the plastic film 13 at a higher speed than the plasma treatment with nitrogen gas, but the surface roughness RMS is less than 2 nm, and the film surface is hardly roughened. It was. In addition, since the amount of atoms constituting the plastic film, for example, the bond between carbon and hydrogen, or the bond between nitrogen and hydrogen is smaller than that in the plasma treatment with nitrogen gas, the functional groups formed on the plastic film are few. It was. After plasma treatment with argon gas, a copper film was formed and the peel strength was measured. As a result, a low value of about 0.3 N / mm was shown.

  Therefore, in order to form a metal film with good adhesion on the plastic film, the inventor introduced nitrogen gas in the plasma treatment before metal film formation, and applied the nitrogen gas plasma treatment on the plastic film. It has been found that it is important to have a roughness of 2 to 5 nm.

  Next, in step 4, the first layer is formed on the plastic film. That is, the plastic film 13 that has passed through the plasma processing chamber 16 enters the first film forming chamber 15a through the guide roll 11a, the expanding roll (not shown), the nip roll, and the shielding plate 10c, and rotates in the direction indicated by the arrow. Enters the outer periphery of the first electrode 5a rotating in the direction. In the first film forming chamber 15a, the evaporation source 8b is melted, and in this embodiment, the proportion of the metal consisting of copper or an alloy containing copper as a main component, preferably the total weight ratio of copper is 99.99%. The above alloys are used. Further, the evaporation source 8b is melted by using a resistance heating method or an electron beam method, and a thin film of a first layer of 10 to 100 Å is formed on the plastic film 13 in the first film formation chamber 15a.

Next, in Step 5, a second layer is formed on the plastic film. That is, the plastic film 13 that has passed through the first film formation chamber 15a enters the second film formation chamber 15b through the shielding plate 10a. In the second film formation chamber 15b, an inert gas such as argon, xenon, or krypton, preferably argon, is introduced from the gas supply unit 9a, and the degree of vacuum in the second film formation chamber 15b is 10 ⁻³ Pa. To 10 ^-1 Pa. When a frequency of 13.56 MHz and a power of 150 W to 1 kW are applied from the high frequency power source 6a to the first electrode 5a via the matching box 7a, glow discharge occurs between the first electrode 5a and the evaporation source 8a, and the plastic film 13 A negative induced DC voltage of about 200 V to about 1000 V is generated in the vicinity. Then, the evaporation source 8a is melted under the glow discharge. As a result, the metal is ionized and ionized by the ionized plasma existing in the glow discharge, and the second thin film is formed on the first film formed on the plastic film 13 in a high energy state. Is done.

  In this embodiment, copper or a metal made of an alloy containing copper as a main component, preferably an alloy having a ratio of 99.99% or more to the total weight ratio of copper is used. Further, the evaporation source 8b is melted by using a resistance heating method or an electron beam method, and a second layer thin film of 3000 to 5000 mm is formed on the plastic film 13 in the second film forming chamber 15b.

  After film formation, the plastic film 13 passes through the shielding plate 10a, enters the film chamber 14, passes through the guide roll 11b, and reaches the take-up roll 3.

  As described above, after the formation of the first metal thin film in the first film formation chamber 15a, the process of continuously forming the second metal thin film in the second film formation chamber 15b is continuously performed. In addition, plastic films can be manufactured.

  By changing the film thickness of the first layer copper formed after the plasma treatment of the present invention, electroplated copper is applied to the plastic film 13 to a thickness of about 20 μm and peeled off by 90 ° according to JIS C6481 (90 ° peel). A test was conducted. At the same time, a peeling test was also conducted after being left at 150 ° C. for 1 day, then left for 3 days, and then left for 7 days. That is, the heating time and peel strength were measured using the thickness of the first layer as a parameter, and the measurement results are shown in FIG.

  The inventor considers the evaluation results shown in FIG. 3 as follows.

When there is no copper of the first layer, copper film is formed in an argon plasma atmosphere after the nitrogen plasma treatment, so that the surface of the polyimide film is roughened by the argon plasma atmosphere at the initial stage of film formation. Therefore, since the nitrogen plasma treatment effect is reduced, the normal peel strength is as low as about 0.7 N / mm. Further, when heated at 150 ° C., in the initial stage, oxidation by oxygen in the polyimide film proceeds, and Cu ₂ O having high adhesion increases at the interface between copper and the polyimide film, so that the adhesion strength increases. However, the adhesion strength between the copper and the polyimide film decreases due to the decrease in the nitrogen plasma treatment effect. Further, as the heating time increases, the oxidation progresses, Cu ₂ O changes to CuO with low adhesion, and the peel strength decreases.

  When the film thickness of the first layer copper is 10 to 100 mm, it is possible to prevent the nitrogen plasma treatment effect from being lowered by the argon plasma atmosphere when forming the second layer copper, and the nitrogen on the polyimide film surface The functional group and copper sufficiently react to form a strong bond, and the adhesion of the film is improved by the anchor effect due to the surface roughening of the polyimide film surface.

  Furthermore, by forming a second layer of copper, the normal peel strength can be 1.0 N / mm or more due to the implantation effect of argon ions and copper ions in an argon plasma atmosphere.

  That is, it is understood that the anchor effect on the first layer copper thin film and the plastic film 13 is further enhanced by the plasma ion implantation effect in the argon plasma atmosphere.

When heated at 150 ° C., oxidation by oxygen in the polyimide film proceeds at the initial stage, Cu ₂ O having high adhesion increases at the interface between copper and the polyimide film, and adhesion strength increases. However, as the heating time increases, Cu ₂ O changes to CuO with low adhesion, and the peel strength decreases. However, the product manufactured according to the present invention does not easily oxidize the interface between copper and polyimide film. The rate of decrease is slow.

  That is, the copper thin film of the first layer having an appropriate thickness of 10 to 100 mm prevents the nitrogen plasma treatment effect from being lowered during the argon plasma treatment, and maintains the peel strength by the plasma ion implantation effect in the argon atmosphere. Yes.

When the film thickness of the first layer copper exceeds 100 mm, it is possible to prevent the nitrogen plasma treatment effect from being deteriorated by the argon plasma atmosphere when the second layer copper film is formed, and the oxygen function on the polyimide film surface. The group and copper react to form a strong bond, and the adhesion of the film is improved by the anchor effect by surface roughening. However, the effect of implanting argon ions and copper ions in the argon plasma atmosphere when forming the second layer of copper is low because the first layer is thick. Therefore, the normal peel strength is only about 1.0 N / mm. When heated at 150 ° C., the oxidation by oxygen in the polyimide film proceeds at the initial stage, and Cu ₂ O having high adhesion increases at the interface between copper and the polyimide film, so that the adhesion strength increases slightly. The effect of implanting argon ions and copper ions in an argon plasma atmosphere when forming a copper layer is low. As the heating time increases, oxidation proceeds, Cu ₂ O changes to CuO having low adhesion, and the peel strength decreases.

  Next, in order to compare with the product of the present invention, as a comparative product, after performing plasma treatment with oxygen gas, in a plasma of argon gas containing 0.01% to 10% oxygen, a polyimide film formed of copper was formed. A peel test was performed. At the same time, a peeling test was also conducted after being left at 150 ° C. for 1 day, then left for 3 days, and then left for 7 days. The measurement results are shown in FIG.

  The inventor estimates that the evaluation mechanism shown in FIG. 4 results from the following mechanism.

  When the plasma treatment is performed with oxygen gas of the comparative example product, oxygen functional groups are formed on the polyimide film surface layer, and the surface is also roughened by the bombard effect. At the time of copper film formation, the oxygen functional group on the polyimide film surface reacts with copper to form a strong bond. Further, since the surface is roughened, the adhesion of the film due to the anchor effect is improved. However, in the initial stage of film formation, the surface of the polyimide film is roughened by the argon plasma atmosphere, and the oxygen plasma treatment effect is reduced. Therefore, the peel strength can be achieved only about 1 N / mm. Further, when heated at 150 ° C., a large amount of oxygen is present at the interface between the copper and the polyimide film, so that the copper at the interface is rapidly oxidized by heat and brittle CuO is formed. As a result, the peel strength decreases rapidly.

  On the other hand, in the production method according to the present invention, nitrogen functional groups are formed in the polyimide film surface layer by introducing nitrogen gas during the plasma treatment, and the polyimide film surface is roughened by nitrogen bombardment. . After the plasma treatment, the first layer of copper thin film is formed using a resistance heating method or an electron beam method, so that the nitrogen plasma treatment effect of the argon plasma atmosphere when forming the second layer of copper is formed. The decrease can be prevented, and the nitrogen functional group on the surface of the polyimide film reacts with copper to form a strong bond, and the adhesion of the film is improved by the anchor effect by surface roughening. Furthermore, by forming a second layer of copper, the peel strength can be increased to about 1.5 N / mm by the implantation effect of argon ions and copper ions in an argon plasma atmosphere.

When heated at 150 ° C., oxidation by oxygen in the polyimide film proceeds at the initial stage, Cu ₂ O having high adhesion increases at the interface between copper and the polyimide film, and adhesion strength increases. However, as the heating time increases, Cu ₂ O changes to CuO with low adhesion, and the peel strength decreases. However, the product manufactured according to the present invention does not easily oxidize the interface between copper and polyimide film. The rate of decrease is slow.

  As described above, in the first embodiment, after the plasma treatment, by forming the first layer of copper thin film, it is possible to maintain high peel strength even in the high temperature standing test with high adhesion. it can.

  In addition, the dehydration process by the film heating unit of the first embodiment is reduced by plasma treatment to reduce film damage due to heat, and the cooling process after heating is not necessary. Can be shortened.

  INDUSTRIAL APPLICABILITY The plastic film according to the present invention, the manufacturing method thereof, and the flexible circuit board to which the plastic film is applied can provide a flexible circuit board that has very strong adhesion and can be formed into a fine pattern by etching.・ Assistant), notebook computers, digital still cameras, liquid crystal displays, and other electronic circuits.

The figure which shows typically the plastic film manufacturing apparatus in Example 1 of this invention. The flowchart of the manufacturing process of the plastic film in Example 1 of this invention The figure which shows the relationship between the peeling strength of the plastic film in Example 1 of this invention, and high temperature leaving time. The figure which shows the relationship between the peeling strength of the plastic film in Example 1 of this invention, and high temperature leaving time.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Unwinding roll 3 Winding roll 4 Film heating means 5a 1st electrode 5b 2nd electrode 6a, 6b High frequency power supply 7a, 7b Matching box 8a, 8b Evaporation source 8c 3rd electrode 9a, 9b Gas supply Part 10a, 10b Shield plate 11a, 11b Guide roll 12a-12d Vacuum pump 13 Plastic film 14 Film chamber 15a, 15b Deposition chamber 16 Plasma processing chamber

Claims (14)

In a plastic film manufacturing method for coating a metal thin film after performing plasma treatment on a plastic film surface, a plasma treatment step in a nitrogen gas atmosphere having a surface roughness after plasma treatment of 2 nm to 5 nm, and after the plasma treatment Forming a first metal thin film on the plastic film surface by melting and vapor-depositing a metal made of copper or a copper-based alloy, and then using an inert gas, A method of producing a plastic film comprising a step of forming a second metal thin film by melting and vapor-depositing a metal made of copper or an alloy containing copper as a main component under plasma discharge on a metal thin film. After the formation of the first metal thin film in the first film formation chamber that is shielded from the first film formation chamber for forming the first metal thin film, the second metal thin film is continuously formed on the metal thin film. The method for producing a plastic film according to claim 1, wherein the forming step is continuously performed. Dehydrating the plastic film in vacuum;
A step of performing a plasma treatment on the surface of the plastic film so that a roughening range is 2 nm to 5 nm; and after the plasma treatment, a metal composed of copper or an alloy containing copper as a main component is melted and evaporated to form the plastic film. A metal thin film is formed thereon, and an inert gas is used to melt and vapor-deposit a metal made of copper or an alloy containing copper as a main component under the inert gas plasma discharge. A method for producing a plastic film comprising a step of depositing a thin film. The method for producing a plastic film according to claim 1, wherein the thickness of the first metal thin film is 10 to 100 mm. The method for producing a plastic film according to claim 1, wherein the plastic film is a polyimide film. The method for producing a plastic film according to claim 3, wherein the dehydrating step is a heat treatment. In the step of forming the second metal thin film, a high frequency power is applied to the plastic film using a mixed gas containing the inert gas as a main component to cause glow discharge, and copper or copper is added under the glow discharge. Melting a metal composed of an alloy as a main component, ionizing the metal by ionized plasma existing in the glow discharge, and accelerating the ionized metal particles by a negative DC voltage induced in the plastic film The method for producing a plastic film according to claim 1, wherein a metal thin film is deposited on the plastic film. The method for producing a plastic film according to claim 1, wherein the metal is an alloy having a ratio of 99.99% or more to the total weight ratio of copper. 2. The method for producing a plastic film according to claim 1, wherein the degree of vacuum in the first film formation chamber for producing the first metal thin film is in the range of 10 ⁻³ Pa to 10 ⁻¹ Pa. 3. Dehydrate the plastic film in a vacuum,
The surface of the plastic film is subjected to a plasma treatment with a roughening range of 2 nm to 5 nm, and after the plasma treatment, a metal composed of copper or an alloy containing copper as a main component is melted and evaporated to form a metal on the plastic film. A thin film is formed, and a metal made of copper or an alloy containing copper as a main component is melted and deposited under an inert gas plasma discharge using an inert gas, thereby forming a metal thin film on the plastic film. Plastic film. Dehydrate the plastic film in a vacuum,
The surface of the plastic film is subjected to plasma treatment with a roughening range of 2 nm to 5 nm, and after the plasma treatment, a metal composed of copper or an alloy containing copper as a main component is melted and deposited on the plastic film. A first metal thin film having a thickness of 10 to 100 mm is formed, and further, an inert gas is used to melt and deposit a metal made of copper or an alloy containing copper as a main component under the inert gas plasma discharge. A flexible circuit board in which a second metal thin film having a thickness of 3000 to 5000 mm is formed and a third metal conductor layer having a predetermined thickness is formed on the second metal thin film. After the plasma treatment is performed on the plastic film surface, in the plastic film manufacturing apparatus for coating the metal thin film, after the plasma treatment in which the surface roughness of the plastic film surface is 2 nm to 5 nm in a nitrogen gas atmosphere, copper or copper is mainly used. A first film forming chamber for forming a first metal thin film having a predetermined thickness on the plastic film surface by melting and vapor-depositing a metal made of an alloy as a component, and then using an inert gas And a second film forming chamber for forming a second metal thin film by melting and vapor-depositing a metal made of copper or a copper-based alloy under plasma discharge on the first metal thin film. A plastic film manufacturing apparatus characterized by that. The apparatus for producing a plastic film according to claim 12, wherein the first metal thin film has a thickness of 10 to 100 mm. 13. The step of continuously forming the second metal thin film in the second film forming chamber is continuously performed after the formation of the first metal thin film in the first film forming chamber. Plastic film manufacturing equipment.

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