JP2005150460A - Resist removing apparatus and resist removing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique for efficiently mixing ozone gas and steam such as water and increasing the peeling speed of an ozone ashing method.
A resist removing apparatus (1) that removes a resist by bringing ozone gas into contact with a resist formed on a semiconductor substrate, the predetermined liquid for assisting decomposition of ozone gas being misted, A mixing chamber 10 that mixes ozone gas to generate a gas-liquid mixed gas, a processing chamber 20 that blows the gas-liquid mixed gas onto the resist of the semiconductor substrate to remove the resist, and a gas-liquid mixed gas generated in the mixing chamber 10 The mixing chamber 10 has a spray nozzle 18 that injects a predetermined liquid into the mixing chamber 10 together with pressurized ozone gas.
[Selection] Figure 1

Description

  The present invention relates to an apparatus and a removal method for removing a resist formed on a surface of a semiconductor substrate, for example, a resist that is a film-like substance by contacting a gas.

In order to manufacture a semiconductor element, it is necessary to bake a predetermined circuit on a semiconductor substrate and perform etching. Circuit baking involves forming a layer of silicon oxide or the like as a material of the circuit on a semiconductor substrate, applying a material containing a photosensitizer (hereinafter referred to as “resist”) to the surface of the semiconductor substrate, and then forming a circuit pattern. This is performed by exposing the resist using a mask serving as an original plate. Then, the exposed portion of the resist applied on the semiconductor substrate on which the predetermined circuit is baked in this way is dissolved and developed with a chemical solution, and the lower layer of the dissolved portion is corroded (etched). A circuit is made. That is, during development, the lower layer of the resist that remains undissolved remains uncorroded in the etching process, and this portion becomes a circuit.
As described above, the resist remaining without being dissolved has an important role as a film during etching. This resist serves its purpose when etching is completed, and should be originally removed from the surface of the semiconductor substrate.

The removal of the resist from the semiconductor substrate is performed by a process called ashing (ashing), for example. One of the ashing methods is an ozone ashing method.
This ozone ashing method is a method in which a semiconductor substrate to be processed is fixed in a sealed space controlled at a predetermined temperature, and heated ozone gas is sprayed onto the surface of the semiconductor substrate containing a resist to come into contact therewith. . That is, the ozone gas sprayed onto the semiconductor substrate is decomposed by the heat of the semiconductor substrate and becomes highly reactive oxygen radicals. Since the resist is usually composed of various hydrocarbons, when this resist reacts with oxygen radicals, it is decomposed into carbon dioxide, water, and oxygen to become a gas and peels from the semiconductor substrate.

Ozone used in this ozone ashing method is decomposed by reaction with a resist to become oxygen, so that it does not remain on the semiconductor substrate and has the advantage of being environmentally friendly. However, on the other hand, there is an inconvenience that the peeling speed for peeling the resist from the semiconductor substrate is slow. For this reason, a technique for increasing the peeling rate of the ozone ashing method is desired.
As such a technique, as shown in Japanese Examined Patent Publication No. 7-79100, the ozone decomposition rate is increased by mixing ozone gas and water vapor generated by heating water to a predetermined temperature, thereby removing the resist. It is known that speed can be increased.
In other words, when ashing is performed with a mixed gas in which ozone gas and water vapor are mixed, the decomposition of ozone molecules occurs in a chain due to the presence of this water vapor, so the ozone decomposition rate is higher than when only ozone gas is used. You can speed up. That is, it is possible to generate more oxygen radicals necessary for the ashing process in a shorter time than when simply using ozone gas.
Japanese Patent Publication No. 7-79100

  Thus, when water vapor is mixed with ozone gas, the mixing ratio of both greatly affects the decomposition rate of ozone gas. That is, the higher the mixing ratio of both, the higher the ozone gas decomposition rate and the higher the resist stripping rate.

  An object of the present invention is to provide a technique for efficiently mixing ozone gas and steam such as water and increasing the peeling speed of the ozone ashing method.

  The present invention is a resist removing apparatus for removing a resist formed on a semiconductor substrate, which mists a predetermined liquid that assists decomposition of ozone gas, and mixes the misted liquid with ozone gas to mix gas and liquid. A first processing chamber for generating a gas; a second processing chamber for removing the resist by bringing the gas-liquid mixed gas into contact with the resist on the semiconductor substrate; and the gas-liquid generated in the first processing chamber. A duct for guiding a mixed gas to the second processing chamber, and the first processing chamber injects the predetermined liquid into the first processing chamber together with the pressurized ozone gas. A resist removal apparatus having a mechanism is provided.

This resist removing apparatus has an injection mechanism that injects both ozone gas and a predetermined liquid in a first processing chamber that generates a gas-liquid mixed gas. The liquid ejected by this ejecting mechanism has a very small particle, and a gas-liquid mixed gas with a higher degree of mixing with ozone gas is generated. For this reason, it can mix with ozone gas efficiently and can generate gas-liquid mixed gas with a high mixing rate.
Here, since the gas-liquid mixed gas contains a large amount of chemical vapor and generates a large amount of oxygen radicals, ashing can be performed efficiently.
By performing ashing using such a gas-liquid mixed gas, the resist peeling speed can be increased.

  The present invention is also a resist removing apparatus for removing a resist formed on a semiconductor substrate, which mists a predetermined liquid that assists decomposition of ozone gas, and mixes the misted liquid with ozone gas to form a gas. A first processing chamber for generating a liquid mixed gas; a second processing chamber for removing the resist by bringing the gas-liquid mixed gas into contact with the resist on the semiconductor substrate; and the first processing chamber generated in the first processing chamber. A duct for guiding a gas-liquid mixed gas to the second processing chamber, and the first processing chamber pressurizes the ozone gas and feeds it into the first processing chamber; An injection mechanism for injecting a predetermined liquid into the first processing chamber, and the ozone gas fed into the first processing chamber by the injection mechanism and the first processing chamber by the injection mechanism. The predetermined liquid injected has a cyclone structure are mixed by swirling spirally, to provide a resist removing apparatus.

In this resist removing apparatus, the ozone gas and the predetermined liquid sent into the first processing chamber are swirled and mixed in a spiral shape, so that they can be efficiently mixed with ozone gas, A gas-liquid mixed gas having a high mixing ratio can be generated.
By performing ashing using such a gas-liquid mixed gas, the resist peeling speed can be increased.

  The predetermined liquid may be water, hydrofluoric acid, acetic acid, an organic amine resist stripping solution, or ethylene carbonate.

The resist removal apparatus may include a heat source for heating the gas-liquid mixed gas passing through the duct.
In general, the ashing process can be efficiently performed when performed at a temperature higher than that of room temperature. For this reason, by heating the gas-liquid mixed gas passing through the duct, if the gas-liquid mixed gas sprayed on the semiconductor substrate is heated, the ashing process can be performed efficiently and the resist stripping rate is increased. Can do.

  The second processing chamber has a substrate holding mechanism for holding the semiconductor substrate to be processed, and the substrate holding mechanism can be rotated at a predetermined speed while holding the semiconductor substrate. It may be. In this way, the gas-liquid mixed gas can be sprayed uniformly on the surface of the semiconductor substrate A, and the ashing process can be performed uniformly.

  The second processing chamber may have an injection mechanism that injects water or air at a predetermined temperature onto the surface of the semiconductor substrate held by the substrate holding mechanism. In the resist removing apparatus having such a jetting mechanism, after the ashing process of the semiconductor substrate is finished, the semiconductor substrate can be rinsed and dried by jetting water or air at a predetermined temperature onto the surface of the semiconductor substrate.

The second processing chamber may have a heat source for heating the semiconductor substrate held by the substrate holding mechanism to a predetermined temperature.
As described above, the ashing process can be efficiently performed when it is generally performed at a temperature higher than room temperature. For this reason, ashing can be efficiently performed by heating the semiconductor substrate with a heat source, for example, a heater.

  A mist trap may be provided at a predetermined position of the duct or the first processing chamber. When the mist trap is provided in the duct or the first processing chamber, excess gas-liquid mixed gas can be shut off, and a predetermined liquid contained in the shut-off gas-liquid mixed gas can be reused. The amount of liquid can be reduced.

The present invention further provides a resist removal method.
The resist removal method of the present invention is a resist removal method for removing a resist formed on a semiconductor substrate, which mists a predetermined liquid that assists in decomposing ozone gas, and mixes the misted liquid with ozone gas to form a gas. A resist removal method comprising: a first step of generating a liquid mixed gas; and a second step of removing the resist by bringing the generated gas-liquid mixed gas into contact with the resist on the semiconductor substrate.

  In the first step, the predetermined liquid may be misted by being jetted together with the pressurized ozone gas from the jetting mechanism into the first processing chamber.

  Further, in the first step, the ozone gas is sent into the first processing chamber by an injection mechanism, and the predetermined liquid is sent into the first processing chamber by an injection mechanism, and is sent into the first processing chamber. The ozone gas and the predetermined liquid fed into the first processing chamber may be swirled in a spiral shape and mixed.

  According to the present invention, ozone gas and water or chemical vapor can be efficiently mixed, so that the resist stripping rate can be increased.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
<First Embodiment>
FIG. 1 shows a configuration diagram of the resist removing apparatus of this embodiment.
The illustrated resist removal apparatus 1 performs an ashing process on a semiconductor substrate using a mixing chamber 10 for mixing ozone gas and a chemical solution, and a gas-liquid mixed gas generated by mixing the ozone gas and the chemical solution in the mixing chamber 10. It includes a processing chamber 20 to be performed and a duct 30 for sending a gas-liquid mixed gas from the mixing chamber 10 to the processing chamber 20.
In this embodiment, hydrofluoric acid is used as the chemical solution.

First, the mixing chamber 10 will be specifically described.
The mixing chamber 10 is a chamber having a predetermined shape, in this example, a cylindrical shape having a hollow inside, and a spray nozzle 18 whose tip faces the inside of the mixing chamber 10 on the side surface thereof, and the spray nozzle An air supply port 19 above 18 is provided.
The spray nozzle 18 is a two-fluid nozzle that sprays a chemical solution and ozone gas together to generate a gas-liquid mixed gas. The spray nozzle 18 is connected to an ozone gas generation unit 14 for generating ozone gas and supplying it into the mixing chamber 10.
The ozone gas generation unit 14 is located outside the mixing chamber 10, and includes an ozone gas generation device 15 that generates ozone gas, and a pressure control unit (not shown) that pressurizes the ozone gas generated by the ozone gas generation device 15 to a predetermined pressure. And a tube body 16 for guiding ozone gas to the spray nozzle 18.
The spray nozzle 18 is also connected to a tube body 17 extending in the vertical direction from near the bottom surface of the mixing chamber 10.
The air supply port 19 is connected to a duct 30 for guiding the gas-liquid mixed gas generated in the mixing chamber 10 from the mixing chamber 10 to the processing chamber 20.
A mist trap (not shown) is provided in the mixing chamber 10 so as to surround the air supply port 19. The mist trap may be provided at a predetermined position of the duct 30.
The ozone gas generation unit 14 is controlled by an ozone gas generation control unit (not shown).

  The bottom surface of the mixing chamber 10 is connected to a chemical solution supply unit 11 for supplying the chemical solution into the mixing chamber 10. The chemical solution supply unit 11 includes a chemical solution holding chamber 12 that holds the chemical solution, and a tube body 13 that guides the chemical solution in the chemical solution holding chamber 12 into the mixing chamber 10. In the present embodiment, the chemical liquid supply unit has a chemical liquid supply control unit (not shown). The chemical solution supply control unit monitors the amount of the chemical solution stored in the bottom of the mixing chamber 10, and automatically from the chemical solution holding chamber 12 when the amount of the chemical solution in the mixing chamber 10 becomes a predetermined amount or less. The chemical solution is supplied into the mixing chamber 10, and the chemical solution is stored on the bottom surface of the mixing chamber 10 up to a position higher than the position of the open end of the tube body 17.

Next, the processing chamber 20 will be described.
The processing chamber 20 has a substantially cylindrical shape having a bottom portion, and a semiconductor substrate A to be processed can be taken in and out from an opening 21 at the upper end that is open. A rotation holding unit 22 for holding the semiconductor substrate A is provided inside the processing chamber 20. The rotation holding unit 22 is configured to be able to rotate the semiconductor substrate A at a predetermined speed while holding the semiconductor substrate A by a rotation holding control means (not shown).
In addition, the processing chamber 20 has a canopy 23 that can move up and down to close the insertion port 21, and the insertion port 21 can be opened and closed by moving the canopy 23 up and down. That is, the initial position of the canopy 23 is a raised position, and the insertion port 21 is formed. However, when the substrate processing apparatus 1 is in operation, the canopy 23 is moved to the lowered position. The vertical movement of the canopy 23 is controlled by the rotation holding control means.
The canopy 23 has an opening hole 23 </ b> A at a position facing the surface of the semiconductor substrate A held by the rotation holding unit 22, and the opening hole 23 </ b> A is connected to the duct 30. That is, the gas-liquid mixed gas can be sprayed to the surface of the semiconductor substrate A held by the rotation holding unit 22 through the opening hole 23A.
On the bottom surface of the processing chamber 20, a tank unit 24 for receiving exhaust gas and waste liquid generated by the ashing process in the processing chamber 20 is provided. The tank unit 24 includes a tank 25 for storing exhaust gas and waste liquid, a pipe body 26 for guiding the exhaust gas and waste liquid from the processing chamber 20 to the tank 25, and an exhaust gas recovery unit for recovering exhaust gas accumulated in the tank 25. 27 and a waste liquid recovery unit 28 that recovers the waste liquid.
The processing chamber 20 is provided with a heater (not shown) so that the semiconductor substrate A held by the rotation holding unit 22 can be heated to a predetermined temperature.
Further, the processing chamber 20 has an injection mechanism (not shown), and after the ashing is completed, water and air can be injected onto the surface of the semiconductor substrate A held by the rotation holding unit 22. ing. This injection mechanism is controlled by an injection mechanism control means (not shown).

The duct 30 is for sending the gas-liquid mixed gas generated in the mixing chamber 10 to the processing chamber 20. Although the shape of this duct 30 is not restricted to this, In this embodiment, it is set as the cylindrical pipe. As described above, the duct 30 communicates with the air supply port 19 of the mixing chamber 10 and the opening hole 23 </ b> A of the processing chamber 20.
In the present embodiment, a heat source 31 for heating the duct 30 from the outside is provided. Then, by heating the duct 30 from the outside by the heat source 31, the gas-liquid mixed gas passing through the duct 30 can be heated.

[Resist removal procedure]
Next, a resist removal procedure by the resist removal apparatus 1 of this embodiment will be described. When removing the resist on the surface of the semiconductor substrate by the resist removing apparatus 1, the semiconductor substrate A to be processed is inserted into the processing chamber 20 from the insertion port 21 on the upper side of the processing chamber 20 by a transfer means (not shown). And it fixes to the rotation holding | maintenance part 22 like FIG. 1 so that the surface which has a resist may become the canopy 23 side.

  When the holding of the semiconductor substrate A to the rotation holding unit 22 is completed, the rotation holding control unit lowers the canopy 23 and puts the processing chamber 20 in a sealed state. Further, the ozone gas generation control unit starts generating ozone gas. As a result, a gas-liquid mixed gas is generated in the mixing chamber 10.

In the mixing chamber 10, the gas-liquid mixed gas is generated as follows.
That is, the ozone gas generated by the ozone gas generation device 15 is guided from the pipe body 16 to the spray nozzle 18 at a predetermined pressure, and the ozone gas is sprayed from the spray nozzle 18. If it does in this way, the chemical | medical solution collected at the bottom part of the mixing chamber 10 will be sucked up by the pipe | tube body 17, will be guide | induced to the spray nozzle 18, and will be sprayed from the spray nozzle 18 with ozone gas. Thereby, the particle | grains of a chemical | medical solution become very small, and the gas-liquid mixed gas with which the degree of mixing with ozone gas was raised is produced | generated.

  In the resist removing apparatus 1 of the present embodiment, the gas-liquid mixed gas is generated in this way. Therefore, in the sealed container, ozone gas is mixed with water or water vapor generated by heating chemical liquid, and the gas is mixed. Gas-liquid mixing can be achieved more efficiently than when a liquid mixed gas is generated.

The gas-liquid mixed gas generated as described above passes through the duct 30 from the air supply port 19 and is guided to the processing chamber 20. At this time, in this embodiment, since the duct 30 is heated at a predetermined temperature by the heat source 31, the gas-liquid mixed gas guided to the processing chamber 20 through the duct 30 has a predetermined temperature. To be heated.
In general, ashing can be efficiently performed when performed at a temperature higher than room temperature. Therefore, if the gas-liquid mixed gas thus heated is used, the ashing can be efficiently performed. Can do.

  The surplus gas-liquid mixed gas in the mixing chamber 10 is removed by the mist trap in the mixing chamber 10 or the mist trap in the duct 30. Since the chemical liquid contained in the gas-liquid mixed gas removed in this way accumulates in the bottom of the mixing chamber 10 again, it can be used again. That is, the amount of the chemical solution to be consumed can be reduced, and the running cost can be suppressed.

The gas-liquid mixed gas guided through the duct 30 is guided to the processing chamber 20 through the opening hole 23A, and sprayed onto the surface of the semiconductor substrate A held by the rotation holding unit 22 to perform ashing.
That is, oxygen radicals contained in the gas-liquid mixed gas sprayed on the semiconductor substrate A react with the resist on the surface of the semiconductor substrate A, and the resist is decomposed into carbon dioxide, water, and oxygen to become a gas and become the semiconductor substrate A. Peel from.
Here, the gas-liquid mixed gas of the present embodiment contains a large amount of chemical vapor and generates a large amount of oxygen radicals, so that ashing can be performed efficiently.

  In the processing chamber 20, the semiconductor substrate A is heated to a predetermined temperature by a heater that is an example of a heat source. As described above, since the ashing process can be efficiently performed when performed at a temperature higher than room temperature, the ashing process can be efficiently performed by heating the semiconductor substrate A.

  Further, the rotation holding control unit rotates the rotation holding unit 22 at a predetermined speed. As a result, the semiconductor substrate A rotates, so that the gas-liquid mixed gas is sprayed uniformly on the surface of the semiconductor substrate A. As a result, the ashing process is performed uniformly.

  When the above ashing process is completed, water and air at a predetermined temperature are jetted in this order toward the semiconductor substrate A held by the rotation holding unit 22 by an unillustrated jetting mechanism. Thereby, after rinsing the semiconductor substrate A, it can be dried.

  The resist removing apparatus 1 of the present embodiment is configured as described above. However, in the mixing chamber 10, a chemical liquid is sprayed into a chamber supplied with ozone gas to achieve gas-liquid mixing. If so, the mixing chamber 10 and the processing chamber 20 may have any structure. That is, it may be configured not to have a heat source for heating the gas-liquid mixed gas, a heat source (heater) for heating the semiconductor substrate A, or the like so that the semiconductor substrate A is not rotated. You can also.

  In the present embodiment, the hydrofluoric acid is used as the chemical solution. However, acetic acid, an organic amine resist stripping solution, or ethylene carbonate may be used as the chemical solution. Further, water may be used.

Second Embodiment
The resist removal apparatus of the present embodiment shares the configuration of the processing chamber with the resist removal apparatus 1 of the above-described embodiment, but is different in the configuration of the mixing chamber.
Hereinafter, the mixing chamber 40 of this embodiment will be described.

FIG. 2 is a diagram illustrating a configuration of a part of the mixing chamber 40 and the duct 50 of the resist removing apparatus 2 of the present embodiment.
As shown in FIG. 2, the mixing chamber 40 of the present embodiment has an inverted conical shape with a hollow interior. In the mixing chamber 40, unlike the first embodiment, the chemical solution supply unit 41 is provided not on the bottom of the mixing chamber 40 but on the upper side surface.
In addition to a pressure control unit (not shown), the chemical solution supply unit 41 includes a chemical solution holding chamber 42 and a tube body 43. The chemical solution in the chemical solution holding chamber 42 is injected into the mixing chamber 40 through the tube body 43. It is configured to be able to. That is, unlike the first embodiment, the chemical solution is not stored at the bottom of the mixing chamber 40.
Further, the pipe body 43 of the chemical liquid supply unit 41 and the pipe body 46 of the ozone gas generation unit 44 are installed at positions where the chemical liquid and ozone gas are injected in the tangential direction of the mixing chamber 40 having an inverted conical shape.
The duct 50 is inserted from the air supply port 47 to the vicinity of the bottom of the mixing chamber 40. Note that a side plate near the bottom surface of the mixing chamber 40 has a tray 40a for positioning the duct 50 so that the tip of the duct 50 does not come into contact with the chemical solution accumulated at the bottom when the resist removing apparatus 2 is operated. ing.

Hereinafter, a procedure for mixing the chemical solution and the ozone gas in the mixing chamber 40 in the resist removing apparatus 2 of the present embodiment will be described.
The ozone gas generated by the ozone gas generator 45 is injected into the mixing chamber 40 from the tube body 46 at a predetermined pressure. The chemical solution in the chemical solution holding chamber 42 is also injected into the mixing chamber 40 from the tube body 43 at a predetermined pressure.
As shown in FIG. 2, the injected ozone gas and chemical liquid descend while swirling around the wall surface of the mixing chamber 40 in a spiral shape.
As described above, in the mixing chamber 40 of the present embodiment, the ozone gas and the chemical liquid are swirled inside the mixing chamber 40 to lengthen the time for the fine particles of the chemical liquid to float in the air, so that the chemical liquid and the ozone gas are efficiently used. A mixed gas-liquid mixed gas is generated. The gas-liquid mixed gas that is mixed while swirling and reaches the lower portion of the mixing chamber 40 is guided to the processing chamber 20 (not shown) through the duct 50. In addition, the chemical liquid accumulated at the bottom of the mixing chamber 40 is collected in the waste liquid collecting section 49 through the tube body 48. The gas-liquid mixed gas produced in this way also contains a large amount of chemical vapor and generates a large amount of oxygen radicals, so that ashing can be performed efficiently.

1 is a configuration diagram of a resist removal apparatus 1 according to a first embodiment of the present invention. The partial block diagram of the resist removal apparatus by 2nd Embodiment of this invention.

Explanation of symbols

1, 2, Resist removing device 10, 40 Mixing chamber 11, 41 Chemical solution supply unit 12, 42 Chemical solution holding chamber 13, 16, 17, 26, 43, 46 Tubing 14, 44 Ozone gas generating unit 15 Ozone gas generating device 18 Spray nozzle 19 , 47 Air supply port 20 Processing chamber 21 Insertion port 22 Rotation holding unit 23 Canopy 23A Opening hole 24 Tank unit 25 Tank 27 Exhaust collection unit 28, 49 Waste liquid collection unit 30, 50 Duct 31 Heat source A Semiconductor substrate

Claims (11)

A resist removal apparatus for removing a resist formed on a semiconductor substrate,
A first processing chamber that mists a predetermined liquid that assists in decomposing ozone gas, and mixes the misted liquid and ozone gas to generate a gas-liquid mixed gas;
A second processing chamber for removing the resist by bringing the gas-liquid mixed gas into contact with the resist on the semiconductor substrate;
A duct for guiding the gas-liquid mixed gas generated in the first processing chamber to the second processing chamber,
The first processing chamber has an injection mechanism that injects the predetermined liquid into the first processing chamber together with the pressurized ozone gas.
Resist remover. A resist removal apparatus for removing a resist formed on a semiconductor substrate,
A first processing chamber that mists a predetermined liquid that assists in decomposing ozone gas, and mixes the misted liquid and ozone gas to generate a gas-liquid mixed gas;
A second processing chamber for removing the resist by bringing the gas-liquid mixed gas into contact with the resist on the semiconductor substrate;
A duct for guiding the gas-liquid mixed gas generated in the first processing chamber to the second processing chamber,
The first processing chamber has an injection mechanism for pressurizing and feeding the ozone gas into the first processing chamber, and an injection mechanism for injecting the predetermined liquid into the first processing chamber, Having a cyclone structure in which the ozone gas fed into the first processing chamber by the injection mechanism and the predetermined liquid ejected into the first processing chamber by the ejection mechanism are swirled and mixed in a spiral shape;
Resist remover. The predetermined liquid is any one of water, hydrofluoric acid, acetic acid, organic amine resist stripping solution, and ethylene carbonate.
The resist removal apparatus according to claim 1 or 2. The resist removing apparatus has a heat source for heating the gas-liquid mixed gas passing through the duct.
The resist removal apparatus according to any one of claims 1 to 3. The second processing chamber has a substrate holding mechanism for holding the semiconductor substrate to be processed.
The substrate holding mechanism is configured to be rotatable at a predetermined speed while holding the semiconductor substrate.
The resist removal apparatus according to any one of claims 1 to 4. The second processing chamber has an injection mechanism that injects water or air at a predetermined temperature onto the surface of the semiconductor substrate held by the substrate holding mechanism.
The resist removal apparatus according to claim 1. The second processing chamber has a heat source for heating the semiconductor substrate held by the substrate holding mechanism to a predetermined temperature.
The resist removal apparatus according to any one of claims 1 to 6. A mist trap is provided at a predetermined position of the duct or the first processing chamber.
The resist removal apparatus according to claim 1. In a resist removal method for removing a resist formed on a semiconductor substrate,
A first step in which a predetermined liquid for assisting decomposition of ozone gas is misted, and the misted liquid and ozone gas are mixed to generate a gas-liquid mixed gas;
A second step of removing the resist by bringing the generated gas-liquid mixed gas into contact with the resist on the semiconductor substrate,
Resist removal method. In the first step, the predetermined liquid is misted by being injected into the first processing chamber from the injection mechanism together with the pressurized ozone gas.
The resist removal method according to claim 9. In the first step, the ozone gas is fed into the first processing chamber by an injection mechanism, and the predetermined liquid is fed into the first processing chamber by an injection mechanism, and the ozone gas fed into the first processing chamber and the first Swirling and mixing the predetermined liquid fed into one processing chamber in a spiral;
The resist removal method according to claim 9.

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