JP2005033037A - Semiconductor light emitting module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting module capable of quickly operating a semiconductor light emitting module. <P>SOLUTION: In the semiconductor light emitting module 1, a semiconductor light emitting element 2 is loaded on a wiring board 22 so that a 1st electrode 2c is brought into contact with a wiring pattern 22a. The wiring board 22 is loaded on a conductive base 24. A 1st area 24a, a 2nd area 24b and a 3rd area 24c are successively formed on the base 24 in a direction crossing with the sidewall 12a of a housing 6. The semiconductor light emitting element 2 is loaded on the 1st area 24a through the wiring board 22. A 2nd electrode 2d of the semiconductor light emitting element 2 is electrically connected to the 2nd area. The 3rd area 24c and the 1st conductor 14a of a terminal substrate 14 are successively formed in the direction crossing with the sidewall 12a along a 1st reference surface extending in a prescribed X axis direction and the direction crossing with the sidewall 12a and electrically connected. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor light emitting module including a semiconductor light emitting element.

In a semiconductor light emitting module comprising a semiconductor light emitting element and a housing that contains a lead terminal electrically connected to an electrode of the semiconductor light emitting element and accommodates the semiconductor light emitting element, the semiconductor light emitting element and the lead terminal have a relay pattern and a wire. (For example, Patent Document 1).
Japanese Patent Laid-Open No. 2002-158389

  In order to output a signal modulated at high speed from the semiconductor light emitting module, it is necessary to operate the semiconductor light emitting element at high speed. However, in the conventional light emitting module described above, a high speed modulation signal cannot be transmitted to the semiconductor light emitting element due to the parasitic capacitance or parasitic inductance between the electrode of the semiconductor light emitting element and the housing, and the semiconductor light emitting element operates at high speed. I couldn't let you.

  Therefore, an object of the present invention is to provide a semiconductor light emitting module capable of operating a semiconductor light emitting element at high speed.

  In order to achieve the above object, a semiconductor light emitting module of the present invention includes a semiconductor light emitting element, a wiring board, a conductive base, and a housing. The semiconductor light emitting element has a light emitting surface, a first electrode, and a second electrode, and emits light from the light emitting surface. The wiring board has a wiring pattern that is electrically connected to the first electrode and on which the semiconductor light emitting element is mounted. The base includes a first region on which the wiring board is mounted, a second region electrically connected to the second electrode, and a third region. The housing has a terminal substrate having a plurality of conductors including at least a first conductor electrically connected to the third region and a second conductor electrically connected to the wiring pattern, and emitting semiconductor light An accommodation space for accommodating the element, the wiring board, and the base is provided. The first conductor and the third region are provided along the first reference plane.

  According to this invention, since the first conductor and the third region are provided along the first reference plane, the length of the wire that electrically connects the third region and the first conductor. You can shorten it. Therefore, it is possible to reduce the inductance in the transmission path of the signal to the second electrode of the semiconductor light emitting element.

  In the semiconductor light emitting module of the present invention, it is preferable that the wiring pattern and the second conductor are provided along a second reference plane different from the first reference plane.

  According to such a configuration, since the wiring pattern and the second conductor are provided along the second reference plane, the length of the wire connecting the wiring pattern and the second conductor can be shortened. . Therefore, it is possible to reduce the inductance in the transmission path of the signal to the first electrode of the semiconductor light emitting device.

  In the semiconductor light emitting module of the present invention, the second region has a conductive block having a top surface, and the second electrode and the top surface are provided along the third reference surface. The top surface and the second electrode are preferably electrically connected.

  According to such a configuration, since the top surface of the block included in the second region of the base and the second electrode of the semiconductor light emitting element are provided along the third reference surface, the second electrode and the top of the block are provided. The length of the wire connecting the surfaces can be shortened. Therefore, it is possible to further reduce the inductance in the transmission path of the signal to the second electrode of the semiconductor light emitting device.

  In the semiconductor light emitting module of the present invention, the terminal substrate has a laminated structure in which a ground layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a third insulating layer are sequentially stacked. The first insulating layer is provided with a plurality of via holes, and the ground layer and the first conductive layer are electrically connected by a conductive material embedded in the plurality of via holes. The first conductor is preferably included, and the second conductive layer preferably includes the second conductor.

  The semiconductor light emitting module according to the present invention further includes a mounting member on which the base is mounted. The mounting member has a connection surface along the first reference plane, and the connection surface and the first conductor are electrically connected. It is preferable that it is connected to.

  According to this configuration, the connection surface of the mounting member that is electrically connected to the second electrode of the semiconductor light emitting element via the base and the first conductor are provided along the first reference surface. Therefore, the connection surface and the first conductor can be connected by a short wire. In addition, since the third region of the base and the connection surface of the mounting member can be connected to the first conductor by a plurality of wires, the inductance in the signal transmission path to the second electrode of the semiconductor light emitting element is further increased. Can be reduced.

  As described above, according to the present invention, since the inductance of the signal transmission path leading to the second electrode of the semiconductor light emitting device can be reduced, the semiconductor light emitting device capable of operating the semiconductor light emitting device at high speed can be achieved. A module is provided.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals. FIG. 1 is a partially broken perspective view of a semiconductor light emitting module 1 according to an embodiment of the present invention.

  As shown in FIG. 1, the semiconductor light emitting module 1 includes a semiconductor light emitting module main part 4 including a semiconductor light emitting element 2, a housing 6 that houses the semiconductor light emitting module main part 4, and an optical waveguide part 8.

  The housing 6 is a container that defines a housing space 10 that houses the semiconductor light emitting module main part 4. The housing 6 includes a pair of side walls 12a extending in the predetermined axis X direction, front and rear walls 12b and 12c extending along a plane intersecting the predetermined axis X, and a bottom plate 12d on which the semiconductor light emitting module main part 4 is mounted. It includes an upper lid (not shown), terminal boards 14 and 16 attached to the pair of side walls 12a, and an optical window 18 attached to a hole 12g provided in the front wall 12b. The pair of side walls 12a, the front wall 12b, the rear wall 12c, the bottom plate 12d, and the upper lid are made of metal, and are made of, for example, Kovar or CuW.

  The terminal boards 14 and 16 are obtained by electrically connecting lead terminals to a wiring board having a laminated structure of an insulator layer and a metal layer. The terminal board 14 has a plurality of conductors 14c including a first conductor 14a and a second conductor 14b. A plurality of lead terminals 14d are electrically connected to the plurality of conductors 14c. Similarly, the terminal board 16 includes a plurality of conductors 16c and a plurality of lead terminals 16d electrically connected to the plurality of conductors 16c. Details of the terminal board 14 will be described later.

  The semiconductor light emitting module main part 4 includes a semiconductor light emitting element 2, a wiring board 22 on which the semiconductor light emitting element 2 is mounted, a base 24 on which the wiring board 22 is mounted, a wiring board 28 on which a light receiving unit 26 is mounted, a base 24, An L carrier (mounting member) 30 on which the wiring board 28 is mounted and a Peltier element module 32 are provided.

  FIG. 2 is a perspective view of the main part 4 of the semiconductor light emitting module, and FIG. 3 is a plan view of the semiconductor light emitting module 1. As shown in FIG. 3, the semiconductor light emitting device 2 includes an edge emitting semiconductor laser having a light emitting surface 2a, a light reflecting surface 2b facing the light emitting surface 2a, a first electrode 2c, and a second electrode 2d. It is. The semiconductor light emitting element 2 is mounted on the wiring board 22 so as to emit light in the direction of the predetermined axis X from the light emitting surface 2a.

  The wiring substrate 22 has a wiring pattern 22a printed on the main surface of a ceramic substrate such as AlN. On the wiring pattern 22a, it mounts so that the 1st electrode 2c of the semiconductor light-emitting device 2 may contact, and the wiring pattern 22a and the 1st electrode 2c are electrically connected. As shown in FIGS. 2 and 3, the wiring pattern 22a extends in the direction crossing the side wall 12a after extending in the predetermined axis X direction. The wiring pattern 22a includes a resistance portion 22b made of a material such as NiCr. The resistance portion 22b is provided to adjust the resistance in the signal transmission path to the first electrode 2c of the semiconductor light emitting element 2.

  As shown in FIG. 3, the end 22c of the wiring pattern 22a and the second conductor 14b of the terminal board 14 are provided in order in a direction intersecting the side wall 12a. The end 22 c of the wiring pattern 22 a and the second conductor 14 b of the terminal substrate 14 are electrically connected by a plurality of wires 34. A negative modulation signal is supplied to the first electrode 2c of the semiconductor light emitting element 2 from the lead terminal 14d connected to the second conductor 14b. The wiring board 22 is mounted on a base 24 made of a conductive material such as CuW.

  The base 24 has a first region 24a, a second region 24b, and a third region 24c. The wiring board 22 is mounted in the first region 24a. In the present embodiment, a portion of the first region 24a where the semiconductor light emitting element 2 is mounted via the wiring substrate 22, the second region 24b, and the third region 24c intersect with the side wall 12a. In order.

  The second region 24b is exposed by cutting one corner of the wiring board 22. A second electrode 2 d of the semiconductor light emitting element 2 is electrically connected to the second region 24 b by a wire 38.

  As shown in FIG. 3, the third region 24 c and the first conductor 14 a of the terminal substrate 14 are sequentially provided in a direction intersecting the side wall 12 a and are electrically connected by a plurality of wires 39. The lead terminal 14d connected to the first conductor 14a is connected to the ground.

  The light receiving unit 26 includes a semiconductor light receiving element 26a such as a photodiode, and a stem 26b on which the semiconductor light receiving element 26a is supported. The light receiving unit 26 is mounted on the wiring board 28 so that the back light from the light reflecting surface 2b of the semiconductor light emitting element 2 is received by the semiconductor light receiving element 26a. The stem 26b is provided with wiring patterns 26c and 26d that are electrically connected to the semiconductor light receiving element 26a. The wiring patterns 26 c and 26 d are electrically connected to one end of the wirings 28 a and 28 b provided on the main surface of the wiring substrate 28 by wires 40 and 42. As shown in FIG. 3, the other ends of the wirings 28a and 28b are electrically connected to the conductor 16c of the terminal board 16 by wires. The semiconductor light receiving element 28 receives the back light from the light reflecting surface 2b, and outputs a photocurrent corresponding to the intensity of the back light to the lead terminal 16d electrically connected to the conductor 16c.

  Further, as shown in FIGS. 2 and 3, the wiring board 28 is provided with wiring patterns 28c and 28d, and an inductor 29 is electrically connected to the wiring patterns 28c and 28d. The wiring pattern 28d is electrically connected to the wiring pattern 22a by a wire. As shown in FIG. 3, the wiring pattern 28 c is connected to the conductor 16 c of the terminal substrate 16, and a bias current is passed through the inductor 29 and the wiring pattern 22 a from the lead terminal 16 d connected to the conductor 16 c. It is supplied to the first electrode 2 c of the semiconductor light emitting element 2.

  The base 24 and the wiring board 28 are mounted on an L carrier 30 mounted on a Peltier element module 32 for controlling the temperature of the semiconductor light emitting module 1 as shown in FIG.

  The L carrier 30 is made of a conductive material such as CuW. As shown in FIG. 2, the L carrier 30 is provided along a surface that intersects the predetermined axis X direction and a surface that extends in a direction that intersects the side wall 12 a, and a surface that intersects the predetermined axis X. Holding part 30b. The mounting portion 30a has a housing portion 30d provided in a concave shape in a direction intersecting the main surface 30c. A base 24 is accommodated in the accommodating portion 30d. The base 24 accommodated in the accommodating portion 30d is electrically connected to the L carrier 30. A wiring board 28 is mounted on the main surface 30c.

  The holding portion 30b is provided with a lens holding hole 30e extending in the predetermined axis X direction. A lens holder 52 that holds the lens 50 is fixed to the lens holding hole 30e. The lens 50 is optically coupled to the light emitting surface 2 a of the semiconductor light emitting element 2.

  Further, an isolator holder 56 that holds an isolator for preventing return light to the semiconductor light emitting element 2 is supported by the holding portion 30b. The isolator 56 is optically coupled to an optical window 18 such as a lens 50 and hermetic glass.

  As shown in FIG. 1, the optical waveguide unit 8 includes a lens 60, a lens holder 62 that holds the lens 60, a ferrule holder 64 that is supported by one end of the lens holder 62, and a ferrule 66 that is held by the ferrule holder 64. And a ferrule 70 fitted to the ferrule 66 and holding the optical fiber 68 in the inner hole, and a cover 72 covering these members. The light emitting surface 2 a of the semiconductor light emitting element 2 is optically coupled to one end of the optical fiber 68 through the lens 50, the isolator 54, the optical window 18, and the lens 60.

Hereinafter, more detailed configurations of the terminal board 14, the wiring board 22, the base 24, and the L carrier 30 will be described. 4 is a cross-sectional view taken along line IV-IV in FIG. The terminal substrate 14 includes a ground plate (ground layer) 14g made of a conductive material such as CuW, a first insulator layer 14h, a first conductive layer 14i, a second insulator layer 14j, and a second conductive layer 14k. And the third insulator layer 14m are laminated and joined to the side wall 12a. The first insulator layer 14h, the second insulator layer 14j, and the third insulator layer 14m are made of ceramics such as AlO ₂ .

  In the portion along the line IV-IV in FIG. 1, the first insulator layer 14h is provided with two via holes 14n. By burying the conductive material 14p in the via hole 14n, the ground plate 14g and the first conductive layer 14i are electrically connected. Further, the first conductor layer 14h and the second insulator layer 14k are electrically connected by the conductive film 14q provided at the edge of the second insulator layer 14j. With the above configuration, the lead terminal 14d joined to the second insulator layer 14k and the ground plate 14g are electrically connected.

  The ground plate 14g extends into the accommodation space 10 as the first conductor 14a. The first conductor 14a and the third region 24c of the base 24 are sequentially provided in a direction intersecting the side wall 12a. The first conductor 14a and the third region 24c of the base 24 are provided along the first reference plane A extending in the direction of the predetermined axis X and the direction intersecting the side wall. Therefore, since the distance between the first conductor 14a and the third region 24c of the base 24 can be reduced, the distance between the plurality of wires 39 connecting the first conductor 14a and the third region 24c can be shortened. Thus, the inductance of the signal transmission path reaching the second electrode 2c of the semiconductor light emitting element 2 can be reduced. In the present embodiment, as shown in FIG. 3, the first conductive pattern 14a and the third region 24c are connected by five gold wires.

  The holding part 30b of the L carrier 30 is provided with a connection surface 30g as shown in FIGS. The connection surface 30g is provided along the first reference surface A as shown in FIG. As shown in FIG. 3, the connection surface 30g and the first conductor 14a are sequentially provided in a direction intersecting the side wall 12a. The first conductor 14a is electrically connected to the connection surface 30g by a plurality of wires 80. By providing the connection surface 30g as described above, the distance of the wire 80 connecting the first conductor 14a and the connection surface 30g can be shortened, and the inductance of the wire 80 can be reduced.

  In addition to the third region 24c, the connection surface 30g can be connected to the first conductor 14a by a wire, so that the number of wires can be increased, and the second electrode 2c of the semiconductor light emitting element 2 can be increased. It is possible to further reduce the inductance of the signal transmission path leading to.

  In addition, since the number of wires connected to the first conductor 14a can be adjusted, the resonance frequency due to the capacitance of the Peltier element module 32 and the inductance of the wire can be shifted from the operating frequency range, and within the operating frequency. A stable modulation signal can be supplied to the semiconductor light emitting element 2. As a result, a stable light output can be obtained from the semiconductor light emitting element 2. In the present embodiment, the connection surface 30g and the third region 24c are connected by six gold wires.

  Further, since the connection surface 30g and the first conductor 14a are electrically connected, the L carrier 30 is connected to the ground plate 14n connected to the ground, and therefore, between the L carrier 30 and the wiring board 22. Capacitance is suppressed.

  As shown in FIG. 4, a portion of the first region 24a of the base 24 where the semiconductor light emitting element 2 is mounted via the wiring substrate 22 and the second region 24b are in a direction intersecting the side wall 12a. It is provided in order. The second region 24b of the base 24 is a block having a top surface. The second electrode 2d of the semiconductor light emitting element 2 and the top surface of the block provided in the second region 24b of the base 24 are provided along the third reference plane C that intersects the side wall 12a. With this configuration, the length of the wire 38 that connects the second electrode 2d of the semiconductor light emitting element 2 and the top surface of the block provided in the second region 24b can be shortened. The impedance of the signal transmission path reaching the electrode 2d can be further reduced.

  FIG. 5 is a cross-sectional view taken along line VV in FIG. In the portion along the line V-V in FIG. 1, the first insulator layer 14h is provided with three via holes 14n. By burying the conductive material 14p in the via hole 14n, the ground plate 14g and the first conductive layer 14i are electrically connected. The second conductor layer 14k extends from the outside to the inside of the accommodation space 10 as the second conductor 14b.

  The second conductor 14 b is electrically connected to the end 22 c of the wiring pattern 22 a by a plurality of wires 34. In the present embodiment, the second conductor 14b and the end 22c of the wiring pattern 22a are sequentially provided in a direction intersecting the side wall 12a, and extend in a direction intersecting the predetermined axis X direction and the side wall 12a. It is provided along the reference plane B. With this configuration, the distance between the second conductor 14b and the end 22c of the wiring pattern 22a can be reduced, and the length of the wire 34 connecting the second conductor 14b and the end 22c can be shortened. As a result, the impedance of the signal transmission path reaching the first electrode 2c of the semiconductor light emitting element 2 can be reduced.

  As described above, in the semiconductor light emitting module 1, the impedance in the transmission path for transmitting a signal to the first electrode 2c and the second electrode 2d of the semiconductor light emitting element 2 is reduced. A high-speed modulation signal can be supplied. As a result, the semiconductor light emitting element 2 can be operated at high speed and stably, and stable light output can be obtained in a wide frequency band.

  In addition, this invention can comprise a various deformation | transformation aspect, without being limited to the said embodiment. FIG. 6 is a perspective view of a semiconductor light emitting module 1a according to another embodiment of the present invention. In the semiconductor light emitting module 1a, the third region 24c and the connection surface 30g are electrically coupled to the first conductor 14a by the wire ribbon 90, and the end 22c of the wiring pattern 22a is also connected to the second conductor 14b. 92 are connected. Other configurations of the semiconductor light emitting module 1 a are the same as those of the semiconductor light emitting module 1. Thus, even if the wire ribbon is used for the connection between the third region 24c, the connection surface 30g and the first conductor 14a, and the connection between the wiring pattern 22a and the second conductor 14b, the idea of the present invention is applied. sell.

FIG. 1 is a partially broken perspective view of a semiconductor light emitting module according to an embodiment of the present invention. FIG. 2 is a perspective view of the main part of the semiconductor light emitting module. FIG. 3 is a plan view of the semiconductor light emitting module according to the embodiment of the present invention. 4 is a cross-sectional view taken along the line IV-IV in FIG. 5 is a cross-sectional view taken along the line V-V in FIG. FIG. 6 is a partially broken perspective view of a semiconductor light emitting module according to another embodiment of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor light emitting module, 2 ... Semiconductor light emitting element, 2c ... 1st electrode, 2d ... 2nd electrode, 4 ... Semiconductor light emitting module main part, 6 ... Housing, 8 ... Optical waveguide part, 10 ... Housing space, 12a ... side walls, 14, 16 ... terminal board, 14a ... first conductor, 14b ... second conductor, 22 ... wiring board, 20a ... wiring pattern, 22c ... end, 24 ... base, 24a ... first area, 24b ... 2nd area | region, 24c ... 3rd area | region, 26 ... Light-receiving part, 28 ... Wiring board, 30 ... L carrier, 30g ... Connection surface, 32 ... Peltier device module.

Claims (5)

A semiconductor light emitting element having a light emitting surface, a first electrode, and a second electrode, and emitting light from the light emitting surface;
A wiring board having a wiring pattern electrically connected to the first electrode and on which the semiconductor light emitting element is mounted;
A conductive base having a first region for mounting the wiring board, a second region electrically connected to the second electrode, and a third region;
A terminal substrate having a plurality of conductors including at least a first conductor electrically connected to the third region and a second conductor electrically connected to the wiring pattern; A housing that provides a housing space for housing the element, the wiring board, and the base;
The semiconductor light emitting module, wherein the first conductor and the third region are provided along a first reference plane. The semiconductor light emitting module according to claim 1, wherein the wiring pattern and the second conductor are provided along a second reference plane different from the first reference plane. The second region has a conductive block having a top surface;
The second electrode and the top surface are provided along a third reference plane,
The semiconductor light emitting module according to claim 1, wherein the top surface and the second electrode are electrically connected. The terminal substrate has a stacked structure in which a ground layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a third insulating layer are stacked in order,
The first insulating layer is provided with a plurality of via holes,
The ground layer and the first conductive layer are electrically connected by a conductive material embedded in the plurality of via holes,
The ground layer includes the first conductor;
The semiconductor light emitting module according to claim 1, wherein the second conductive layer includes the second conductor. A mounting member on which the base is mounted;
The mounting member has a connection surface along the first reference surface;
The semiconductor light emitting module according to claim 1, wherein the connection surface and the first conductor are electrically connected.

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