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JP2005001090A - Thin film piezoelectric element, manufacturing method thereof, and actuator - Google Patents

Thin film piezoelectric element, manufacturing method thereof, and actuator Download PDF

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Publication number
JP2005001090A
JP2005001090A JP2003170306A JP2003170306A JP2005001090A JP 2005001090 A JP2005001090 A JP 2005001090A JP 2003170306 A JP2003170306 A JP 2003170306A JP 2003170306 A JP2003170306 A JP 2003170306A JP 2005001090 A JP2005001090 A JP 2005001090A
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film
electrode film
thin film
main electrode
piezoelectric
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Hiroichi Uchiyama
博一 内山
Hideki Kuwajima
秀樹 桑島
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Abstract

【課題】製造工程の簡単な一対構成の薄膜圧電体素子とその製造方法およびそれを用いたアクチュエータを提供する。
【解決手段】第１主電極膜５０と第１対向電極膜５６とで挟まれた第１圧電体薄膜５２と、第２主電極膜６２と第２対向電極膜６８とで挟まれた第２圧電体薄膜６６とが接着され、第１主電極膜５０と第２主電極膜６２とはそれぞれその一部が島状に分離された分離電極部６０、７２を構成し、第１主電極膜５０と第２主電極膜６２の分離電極部６０、７２においてヴィアホール５８、７０を介して、第１主電極膜５０の分離電極部６０と第１対向電極膜５６、および第２主電極膜６２の分離電極部７２と第２対向電極膜６８とがそれぞれ電気的に接続され、かつ、分離電極部６０と第１主電極膜５０とはそれぞれ第１圧電体薄膜５２よりも突出する形状の延在部５０ａ、６０ａを有し、これを所定距離離間して一対同一面上に配置した構成とした。
【選択図】 図４A thin-film piezoelectric element having a simple configuration with a simple manufacturing process, a manufacturing method thereof, and an actuator using the same are provided.
A first piezoelectric thin film 52 sandwiched between a first main electrode film and a first counter electrode film, and a second sandwiched between a second main electrode film and a second counter electrode film. The piezoelectric thin film 66 is bonded, and the first main electrode film 50 and the second main electrode film 62 constitute separation electrode portions 60 and 72, each of which is separated into an island shape, and the first main electrode film 50 and the separation electrode portions 60 and 72 of the second main electrode film 62 through the via holes 58 and 70, the separation electrode portion 60 of the first main electrode film 50, the first counter electrode film 56, and the second main electrode film 62, the separation electrode portion 72 and the second counter electrode film 68 are electrically connected to each other, and the separation electrode portion 60 and the first main electrode film 50 have shapes protruding from the first piezoelectric thin film 52, respectively. The structure which has the extension parts 50a and 60a, and arrange | positioned this on the same plane by separating predetermined distance It was.
[Selection] Figure 4

Description

【０００１】
【発明の属する技術分野】
本発明は、薄膜圧電体素子とその製造方法並びにそれを用いたアクチュエータに関する。
【０００２】
【従来の技術】
近年、半導体技術の進歩とともに半導体製造技術により超小型のマイクロマシンを実現しようとする努力がなされており、マイクロアクチュエータ等の機械的電気素子が脚光を浴びている。このような素子により小型で高精度の機構部品を実現することができ、しかも半導体プロセスを用いることでその生産性も大幅に改善できる。特に、圧電体素子を用いたマイクロアクチュエータはインクジェットプリンタのインク吐出用や磁気ディスク記録再生装置のヘッドスライダの微小位置決め用等に応用されている。
【０００３】
例えば、従来の磁気ディスク記録再生装置では、磁気ディスクに対して情報の記録再生を行う磁気ヘッドがヘッドスライダに搭載され、さらにヘッドスライダはアクチュエータアームに取り付けられている。アクチュエータアームをボイスコイルモータ（以下、ＶＣＭとよぶ）によって揺動させることにより、磁気ヘッドを磁気ディスク上の所定のトラック位置に位置決めし、記録再生を行っている。しかし、記録密度の向上とともに、このような従来のＶＣＭのみでの位置決めでは十分な精度を確保できなくなってきている。このために、ＶＣＭの位置決め手段に加えて、圧電体素子を用いた微小位置決め手段によりヘッドスライダを微小駆動させて高速、高精度の位置決めを行う技術開発も行われている。
【０００４】
このように、圧電体素子を用いたアクチュエータは種々の応用が期待されている。これに対して、特許文献１では、小型で、低電圧で駆動でき、しかも変位量が大きい薄膜積層型アクチュエータおよびその製造方法が示されている。すなわち、酸化マグネシウム（ＭｇＯ）、チタン酸ストロンチウム（ＳｒＴｉＯ３）、あるいはサファイヤ等の単結晶基板上に、白金（Ｐｔ）、アルミニウム（Ａｌ）、金（Ａｕ）、または銀（Ａｇ）等の電極層と、チタン酸ジルコン酸鉛（ＰＺＴ）やチタン酸ジルコン酸ランタン酸鉛（ＰＬＺＴ）等の圧電材料からなる圧電層、さらに上記と同様な材料の電極層とを形成する。この膜上にガラスまたはシリコン（Ｓｉ）から構成される接合層とを形成して、圧電部材を作製する。つぎに、陽極接合法により圧電部材同士を接合層を介して接合する工程と、その後さらに積層する側の基板を研磨等により除去して露出した電極層上に接合層を形成する工程と、この接合層と別の圧電部材の接合層とを上述したような手順で接合し、再び基板を除去する工程とを繰り返すことで複数層に積層した積層体を形成する。この後、この積層体中の内層電極を交互に両側から取り出すことで積層型アクチュエータを実現している。
【０００５】
【特許文献１】
特開平８−８８４１９号公報
【０００６】
【発明が解決しようとする課題】
しかしながら、上述の例では積層対中の内装電極を交互に両側から取り出す構成であるため、基板面に対して垂直方向の変位を生じる構成となる。このため、例えば磁気ディスク記録再生装置のヘッドスライダの微小アクチュエータとして用いる形状としては適さない。すなわち、積層構成としながら、膜厚方向と垂直方向に変位を生じさせるためには、内層電極膜の取り出し方が重要となるが、このような点については上述の例も含めて示されたものは見られない。
【０００７】
本発明はこのような問題を解決するためになされたもので、特に圧電体薄膜を二層積層する場合の内層電極膜の外部への取り出しが容易で、かつこのような薄膜圧電体素子を一対構成としたときに、量産性に優れ、かつ外部機器へ接続する電極パッドを２つのみとすることが可能な薄膜圧電体素子とその製造方法並びにそれを用いたアクチュエータを提供するものである。
【０００８】
【課題を解決するための手段】
この課題を解決するために本発明の薄膜圧電体素子は、主電極膜と、主電極膜上に形成された圧電体薄膜と、圧電体薄膜上に形成された対向電極膜とからなり、主電極膜はその一部が島状に主電極膜とは分離された分離電極部を構成し、分離電極部において、圧電体薄膜に設けられたヴィアホールを介して分離電極部と対向電極膜とが電気的に接続され、かつ分離電極部と主電極膜とは圧電体薄膜よりも突出する形状の延在部を有する構成からなる。
【０００９】
この構成により、対向電極膜と主電極膜とを制御回路に接続する端子電極を延在部に設けることができる。この延在部は同一面上で、かつ近接して配置できるので、制御回路への配線引き回しと実装作業が容易にできる。また、ヴィアホール加工と圧電体薄膜の外形加工とは別々に行えるので、精度が要求されるヴィアホール加工をドライエッチングで行っても、対向電極膜と主電極膜間でのショート等の不良発生を抑制できる。
【００１０】
また、本発明の薄膜圧電体素子は、上記記載の薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成であって、一対の薄膜圧電体素子の圧電機能を生じる領域部は所定距離の中央線を中心として鏡面対称であり、一対の薄膜圧電体素子のうち、一方の薄膜圧電体素子の分離電極部の延在部、他方の薄膜圧電体素子の主電極膜の延在部、一方の薄膜圧電体素子の主電極膜の延在部および他方の薄膜圧電体素子の分離電極部の延在部が上記所定距離の間の面上に近接して配置された構成からなる。
【００１１】
この構成により、薄膜圧電体素子が１個のみの場合に比べて変位量を大きくすることが可能となる。さらに、それぞれの薄膜圧電体素子が逆方向に変位するように電圧を印加すれば、薄膜圧電体素子の長さ方向に対して直交する方向に、例えば磁気ヘッドを微動させることもできる。
【００１２】
また、本発明の薄膜圧電体素子は、上記記載の薄膜圧電体素子であって、一対の薄膜圧電体素子のうち、一方の薄膜圧電体素子の分離電極部の延在部と他方の薄膜圧電体素子の主電極膜の延在部とが対向して配置されるとともに電気的に接続され、一方の薄膜圧電体素子の主電極膜の延在部と他方の薄膜圧電体素子の分離電極部の延在部とが対向して配置されるとともに電気的に接続された構成からなる。
【００１３】
この構成により、一対の薄膜圧電体素子を制御回路に接続する端子電極部を２個のみとすることができるので、実装作業を簡略化できる。
【００１４】
また、本発明の薄膜圧電体素子は、第１主電極膜と第１対向電極膜とで挟まれた第１圧電体薄膜と、第２主電極膜と第２対向電極膜とで挟まれ第１圧電体薄膜と同じ形状の第２圧電体薄膜とが、第１対向電極膜と第２対向電極膜とを対向させて接着層により接着された構成からなり、第１主電極膜と第２主電極膜はそれぞれその一部が島状に分離された分離電極部を構成し、第１主電極膜と第２主電極膜のそれぞれの分離電極部において、第１圧電体薄膜と第２圧電体薄膜とにそれぞれ設けられたヴィアホールを介して第１主電極膜の分離電極部と第１対向電極膜、および第２主電極膜の分離電極部と第２対向電極膜とがそれぞれ電気的に接続され、かつ、第１主電極膜の分離電極部と第１主電極膜とはそれぞれ第１圧電体薄膜よりも突出する形状の延在部を有する構成からなる。
【００１５】
この構成により、ヴィアホール加工と圧電体薄膜の外形加工とは別々に行えるので、精度が要求されるヴィアホール加工をドライエッチングで行っても対向電極膜と主電極膜間でのショート等の不良発生を抑制できる。さらに、積層構成であるので薄膜圧電体素子が変位するときの力を大きくでき、かつ薄膜圧電体素子を基板から完全に分離した状態としてもそりが生じず、アクチュエータとして使用する場合の信頼性を大きく改善できる。
【００１６】
また、本発明の薄膜圧電体素子は、上記記載の薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成であって、一対の薄膜圧電体素子の圧電機能を生じる領域部は所定距離の中央線を中心として鏡面対称であり、一対の薄膜圧電体素子のうち、一方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部、他方の薄膜圧電体素子の第１主電極膜の延在部、一方の薄膜圧電体素子の第１主電極膜の延在部および他方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部が上記所定距離の間の面上に近接して配置された構成からなる。
【００１７】
この構成により、薄膜圧電体素子を駆動する制御回路に接続するための端子電極部を延在部に設けることができ、ワイヤリード等で実装する場合に効率的に行える。また、上記所定距離の間の面上に設けるので一対の薄膜圧電体素子の外形寸法は特に変更する必要がなく、したがって基板上で一括作製できる薄膜圧電体素子数も変わらず、コストの増加を招くことがない。
【００１８】
また、本発明の薄膜圧電体素子は、上記記載の薄膜圧電体素子であって、一対の薄膜圧電体素子のうち、一方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部と他方の薄膜圧電体素子の第１主電極膜の延在部とが対向して配置され、一方の薄膜圧電体素子の第１主電極膜の延在部と他方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部とが対向して配置され、一方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部、一方の薄膜圧電体素子の第２主電極膜の分離電極部、他方の薄膜圧電体素子の第１主電極膜の延在部および他方の薄膜圧電体素子の第２主電極膜を電気的に接続する第１接続配線と、他方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部、他方の薄膜圧電体素子の第２主電極膜の分離電極部、一方の薄膜圧電体素子の第１主電極膜の延在部および一方の薄膜圧電体素子の第２主電極膜を電気的に接続する第２接続配線とを有する構成からなる。
【００１９】
この構成により、積層構成の薄膜圧電体素子を一対として用いても、これらを駆動する制御回路と接続するための端子電極を２個のみとすることができるので、実装作業が大幅に簡略化される。
【００２０】
また、本発明の薄膜圧電体素子は、第１主電極膜と第１対向電極膜とで挟まれた第１圧電体薄膜と、第２主電極膜と第２対向電極膜とで挟まれ第１圧電体薄膜と同じ形状の第２圧電体薄膜とが、第１対向電極膜と第２対向電極膜とを対向させて導電性の接着層により接着された構成からなり、第１主電極膜はその一部が島状に分離された分離電極部を構成し、第１主電極膜の分離電極部において、第１圧電体薄膜に設けられたヴィアホールを介して第１主電極膜の分離電極部、第１対向電極膜および第２対向電極膜が電気的に接続され、かつ、第１主電極膜の分離電極部と第１主電極膜とは第１圧電体薄膜よりも突出する形状の延在部を有する構成からなる。
【００２１】
この構成により、ヴィアホール加工と分離電極部の加工は第１主電極膜と第１圧電体薄膜のみでよくなり、製造プロセスを大幅に簡略化できる。また、積層構成であるので薄膜圧電体素子が変位するときの力を大きくでき、かつ薄膜圧電体素子を基板から完全に分離した状態としてもそりが生じず、アクチュエータとして使用する場合の信頼性を大きく改善することもできる。
【００２２】
また、本発明の薄膜圧電体素子は、上記記載の薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成であって、一対の薄膜圧電体素子の圧電機能を生じる領域部は所定距離の中央線を中心として鏡面対称であり、一対の薄膜圧電体素子のうち、一方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部、他方の薄膜圧電体素子の第１主電極膜の延在部、一方の薄膜圧電体素子の第１主電極膜の延在部および他方の薄膜圧電体素子の分離電極部の延在部が所定距離の間の面上に近接して配置された構成からなる。
【００２３】
この構成により、薄膜圧電体素子を駆動する制御回路に接続するための端子電極部を延在部に設けることができ、ワイヤリード等で実装する場合に効率的に行える。また、上記所定距離の間の面上に設けるので一対の薄膜圧電体素子の外形寸法は特に変更する必要がなく、したがって基板上で一括作製できる薄膜圧電体素子数も変わらず、コストの増加を招くことがない。
【００２４】
また、本発明の薄膜圧電体素子は、上記記載の薄膜圧電体素子であって、一方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部と他方の薄膜圧電体素子の第１主電極膜の延在部とが対向して配置され、一方の薄膜圧電体素子の第１主電極膜の延在部と他方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部とが対向して配置され、一方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部、他方の薄膜圧電体素子の第１主電極膜の延在部および他方の薄膜圧電体素子の第２主電極膜とを電気的に接続する第１接続配線と、他方の薄膜圧電体素子の第１主電極膜の分離電極部の延在部、一方の薄膜圧電体素子の第１主電極膜の延在部および一方の薄膜圧電体素子の第２主電極膜とを電気的に接続する第２接続配線とを有する構成からなる。
【００２５】
この構成により、積層構成の薄膜圧電体素子を一対として用いても、これらを駆動する制御回路と接続するための端子電極を２個のみとすることができるので、実装作業が大幅に簡略化される。また、ヴィアホールおよび分離電極部の加工は第１主電極膜と第１圧電体薄膜のみでよいので、製造プロセスを大幅に簡略化できる。
【００２６】
また、本発明の薄膜圧電体素子は、第１主電極膜と第１対向電極膜とで挟まれた第１圧電体薄膜と、第２主電極膜と第２対向電極膜とで挟まれ第１圧電体薄膜と同じ形状の第２圧電体薄膜とが第１対向電極膜と第２対向電極膜とを対向させて導電性の接着層により接着された構成からなり、第１主電極膜は第１圧電体薄膜よりも突出する形状の延在部を有し、第２主電極膜には、その一部が島状に分離された分離電極部が設けられ、第２主電極膜の分離電極部において、第２圧電体薄膜に設けられたヴィアホールを介して第２主電極膜の分離電極部、第１対向電極膜および第２対向電極膜が電気的に接続された構成を有する。
【００２７】
この構成により、ヴィアホール加工と分離電極部の加工は第１主電極膜と第２圧電体薄膜のみでよくなり、製造プロセスを大幅に簡略化できる。また、積層構成であるので薄膜圧電体素子が変位するときの力を大きくでき、かつ薄膜圧電体素子を基板から完全に分離した状態としてもそりが生じず、アクチュエータとして使用する場合の信頼性を大きく改善することもできる。
【００２８】
また、本発明の薄膜圧電体素子は、上記記載の薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成であって、一対の薄膜圧電体素子の圧電機能を生じる領域部は上記所定距離の中央線を中心として鏡面対称であり、一対の薄膜圧電体素子のうち、一方の薄膜圧電体素子の第１主電極膜の延在部と他方の薄膜圧電体素子の第１主電極膜の延在部とが所定距離の間の面上に近接して配置された構成を有する。
【００２９】
この構成により、薄膜圧電体素子間の配線接続が容易になる。また、上記所定距離の間の面上に設けるので一対の薄膜圧電体素子の外形寸法は特に変更する必要がなく、したがって基板上で一括作製できる薄膜圧電体素子数も変わらず、コストの増加を招くことがない。
【００３０】
また、本発明の薄膜圧電体素子は、上記記載の薄膜圧電体素子であって、一方の薄膜圧電体素子の第１主電極膜の延在部と第２主電極膜、および他方の薄膜圧電体素子の第２主電極膜の分離電極部とを電気的に接続する第１接続配線と、他方の薄膜圧電体素子の第１主電極膜の延在部と第２主電極膜、および一方の薄膜圧電体素子の第２主電極膜の分離電極部とを電気的に接続する第２接続配線とを有する構成からなる。
【００３１】
この構成により、積層構成の薄膜圧電体素子を一対として用いても、これらを駆動する制御回路と接続するための端子電極を２個のみとすることができるので、実装作業が大幅に簡略化される。
【００３２】
また、本発明のアクチュエータは、上記記載の薄膜圧電体素子と、薄膜圧電体素子を搭載する基板と、薄膜圧電体素子にそれぞれ逆方向の伸縮動作を行わせる制御回路とを有する構成からなる。この構成により、薄膜圧電体素子の長さ方向に対して直交する方向に高精度の微動を行わせることができる。
【００３３】
また、本発明のディスク記録再生装置は、上記アクチュエータと、ディスクと、ディスクに記録と再生の少なくとも一方を行うヘッドと、ヘッドが固定されたフレクシャーと、フレクシャーを支持し、ディスク表面と平行な方向に回転自在のアームと、ヘッドをディスクの所定のトラック位置に位置決めするための第１位置決め手段と第２位置決め手段とを有し、第１位置決め手段はアームを回転させる駆動手段であり、第２位置決め手段はフレクシャーに固定された上記アクチュエータからなる構成を有する。
【００３４】
この構成により、ディスクの所定のトラック位置へのヘッドの位置決めを非常に高精度に行えるので、高密度の記録が可能となる。
【００３５】
さらに、本発明の薄膜圧電体素子の製造方法は、基板上に第１主電極膜と第３主電極膜となる主電極膜を成膜する工程と、主電極膜の所定領域の一部を除去する加工を行う工程と、主電極膜上に第１圧電体薄膜と第３圧電体薄膜となる圧電体薄膜を成膜する工程と、所定領域の圧電体薄膜に主電極膜まで開口するヴィアホールを形成した後に、第１対向電極膜と第３対向電極膜となる対向電極膜を成膜する工程と、対向電極膜と圧電体薄膜とをほぼ同じ所定形状に加工して、第１圧電体薄膜と第１対向電極膜、および第３圧電体薄膜と第３対向電極膜とのそれぞれの積層構成を形成する工程と、主電極膜を加工して、第１圧電体薄膜よりも少なくとも大きな形状で、かつ、所定領域の近傍においてその一部が延在されて露出した延在部を有する第１主電極膜と第３主電極膜とをそれぞれ形成するとともに、それぞれの所定領域において、第１対向電極膜および第３対向電極膜のそれぞれがヴィアホールを介して所定領域の主電極膜と接続され、かつ、所定領域の主電極膜が延在されて露出した延在部を有し、第１主電極膜および第３主電極膜とはそれぞれ電気的に分離した第１主電極膜の分離電極部と第３主電極膜の分離電極部とを形成する工程とを有する方法からなる。
【００３６】
この方法により、ヴィアホール加工と圧電体薄膜の外形加工とは別々に行えるので、精度が要求されるヴィアホール加工をドライエッチングで行っても対向電極膜と主電極膜間でのショート等の不良発生を抑制でき、歩留まりよく生産することができる。
【００３７】
さらに、本発明の薄膜圧電体素子の製造方法は、第１主電極膜の延在部と第３対向電極膜に接続する第３主電極膜の分離電極部とを電気的に接続する第１接続配線と、第３主電極膜の延在部と第１対向電極膜に接続する第１主電極膜の分離電極部の延在部とを電気的に接続する第２接続配線とを形成する工程とをさらに含む方法からなる。
【００３８】
この方法により、一対の薄膜圧電体素子を駆動するための電極端子を２個のみとすることができるので、実装工程が大幅に簡略化できる。
【００３９】
さらに、本発明の薄膜圧電体素子の製造方法は、第１の基板上に第１主電極膜と第３主電極膜となる主電極膜を形成し、主電極膜の所定領域の一部を除去する加工を行い、第１圧電体薄膜と第３圧電体薄膜となる圧電体薄膜を成膜し、所定領域の圧電体薄膜に主電極膜まで開口するヴィアホールを形成した後に、第１対向電極膜と第３対向電極膜となる対向電極膜を形成する第１基板加工工程と、第２の基板上に第２主電極膜と第４主電極膜となる主電極膜を形成し、主電極膜の所定領域の一部を除去する加工を行い、第２圧電体薄膜と第４圧電体薄膜となる圧電体薄膜を成膜し、所定領域の圧電体薄膜に主電極膜まで開口するヴィアホールを形成した後に、第２対向電極膜と第４対向電極膜となる対向電極膜を形成する第２基板加工工程と、第１の基板と第２の基板の対向電極膜同士を接着層により接着する工程と、第２の基板を除去して第２の基板側の主電極膜を露出させる工程と、第２の基板側の主電極膜、対向電極膜、圧電体薄膜、第１の基板側の対向電極膜および圧電体薄膜をほぼ同一の所定形状に加工して、第２主電極膜、第２圧電体薄膜、第２対向電極膜、接着層、第１対向電極膜および第１圧電体薄膜からなる積層体と、第４主電極膜、第４圧電体薄膜、第４対向電極膜、接着層、第３対向電極膜および第３圧電体薄膜からなる積層体とを形成する工程と、それぞれの所定領域において主電極膜の一部が第２主電極膜および第４主電極膜とはそれぞれ電気的に分離した第２主電極膜の分離電極部と第４主電極膜の分離電極部を形成し、かつ第２対向電極膜および第４対向電極膜のそれぞれがヴィアホールを介して第２主電極膜の分離電極部と第４主電極膜の分離電極部とに接続される工程と、第１の基板側の主電極膜を加工し、第１圧電体薄膜および第３圧電体薄膜よりも少なくとも大きく、かつその一部が露出した延在部を有する第１主電極膜と第３主電極膜とを形成する工程と、それぞれの所定領域において主電極膜の一部が第１主電極膜および第３主電極膜とはそれぞれ電気的に分離し、かつその一部が露出した延在部を有する第１主電極膜の分離電極部と第３主電極膜の分離電極部とをそれぞれ形成し、第１対向電極膜および第３対向電極膜のそれぞれがヴィアホールを介して第１主電極膜の分離電極部と第３主電極膜の分離電極部とに接続される工程とからなる。
【００４０】
この方法により、二層に積層した薄膜圧電体素子を一対とした構成であっても対向電極膜の制御回路との接続のための端子電極の形成を確実に、かつ信頼性よく作製することができる。
【００４１】
さらに、本発明の薄膜圧電体素子の製造方法は、第１主電極膜の延在部、第２主電極膜、第３対向電極膜に接続する第３主電極膜の分離電極部および第４対向電極膜に接続する第４主電極膜の分離電極部とを電気的に接続する第１接続配線と、第３主電極膜の延在部、第４主電極膜、第１対向電極膜に接続する第１主電極膜の分離電極部および第２対向電極膜に接続する第２主電極膜の分離電極部とを電気的に接続する第２接続配線とを形成する工程をさらに含む方法からなる。
【００４２】
この方法により、一対構成で、かつそれぞれが二層積層してなる薄膜圧電体素子の制御回路と接続するための端子電極を２個のみとすることができ、実装作業を大幅に改善できる。
【００４３】
さらに、本発明の薄膜圧電体素子の製造方法は、第１の基板上に第１主電極膜と第３主電極膜となる主電極膜、第１圧電体薄膜と第３圧電体薄膜となる圧電体薄膜、および第１対向電極膜と第２対向電極膜となる対向電極膜を形成する第１基板加工工程と、第２の基板上に第２主電極膜と第４主電極膜となる主電極膜を形成し、主電極膜の所定領域の一部を除去する加工を行い、第２圧電体薄膜と第４圧電体薄膜となる圧電体薄膜を成膜し、所定領域の圧電体薄膜に主電極膜まで開口するヴィアホールを形成した後に、第２対向電極膜と第４対向電極膜となる対向電極膜を形成する第２基板加工工程と、第１の基板と第２の基板の対向電極膜同士を導電性の接着層により接着する工程と、第２の基板を除去して第２の基板側の主電極膜を露出させる工程と、第２の基板側の主電極膜、対向電極膜と圧電体薄膜、第１の基板側の対向電極膜および圧電体薄膜をほぼ同一の所定形状に加工して、第２主電極膜、第２圧電体薄膜、第２対向電極膜、接着層、第１対向電極膜および第１圧電体薄膜からなる積層体と、第４主電極膜、第４圧電体薄膜、第４対向電極膜、接着層、第３対向電極膜および第３圧電体薄膜からなる積層体とを形成する工程と、第１の基板側の主電極膜を加工して、第１圧電体薄膜および第３圧電体薄膜よりも少なくとも大きく、かつその一部が露出した延在部を有する第１主電極膜と第３主電極膜とを形成する工程と、ヴィアホールを含む所定領域において、主電極膜の一部が第２主電極膜および第４主電極膜とはそれぞれ電気的に分離された第２分離電極部と第４分離電極部とを形成する工程とを有する方法からなる。
【００４４】
この方法により、ヴィアホールおよび分離電極部の加工が第２の基板側のみでよくなり、製造プロセスが大幅に簡略化される。
【００４５】
さらに、本発明の薄膜圧電体素子の製造方法は、上記記載の薄膜圧電体素子の製造方法であって、第１主電極膜の延在部、第２主電極膜および第４分離電極部を電気的に接続する第１接続配線と、第３主電極膜の延在部、第４主電極膜および第２分離電極部を電気的に接続する第２接続配線とを形成する工程をさらに含む方法からなる。
【００４６】
この方法により、一対構成で、かつそれぞれが二層積層してなる薄膜圧電体素子の制御回路と接続するための端子電極を２個のみとすることができ、実装作業を大幅に改善できる。
【００４７】
さらに、本発明の薄膜圧電体素子の製造方法は、第１の基板上に第１主電極膜と第３主電極膜となる主電極膜を形成し、この主電極膜の所定領域の一部を除去する加工を行い、第１圧電体薄膜と第３圧電体薄膜となる圧電体薄膜を成膜し、この所定領域の圧電体薄膜に主電極膜まで開口するヴィアホールを形成した後に、第１対向電極膜と第３対向電極膜となる対向電極膜を形成する第１基板加工工程と、第２の基板上に第２主電極膜と第４主電極膜となる主電極膜、第２圧電体薄膜と第４圧電体薄膜となる圧電体薄膜および第２対向電極膜と第４対向電極膜となる対向電極膜をそれぞれ積層形成する第２基板加工工程と、 第１の基板と第２の基板の対向電極膜同士を導電性の接着層により接着する工程と、第２の基板を除去して、第２の基板側の主電極膜を露出させる工程と、 第２の基板側の主電極膜、対向電極膜と圧電体薄膜、第１の基板側の対向電極膜および圧電体薄膜をほぼ同一の所定形状に加工して、第２主電極膜、第２圧電体薄膜、第２対向電極膜、接着層、第１対向電極膜および第１圧電体薄膜からなる積層体と、第４主電極膜、第４圧電体薄膜、第４対向電極膜、接着層、第３対向電極膜および第３圧電体薄膜からなる積層体とを形成する工程と、第１の基板側の主電極膜を加工し、第１圧電体薄膜および第３圧電体薄膜よりも少なくとも大きく、かつその一部が露出した延在部を有する第１主電極膜と第３主電極膜とを形成する工程と、ヴィアホールを含む所定領域において、主電極膜の一部が第１主電極膜および第３主電極膜とはそれぞれ電気的に分離された第１分離電極部と第３分離電極部とをそれぞれ形成する工程とを有する方法からなる。
【００４８】
この方法により、ヴィアホールおよび分離電極部の加工が第１の基板側のみでよくなり、製造プロセスが大幅に簡略化される。
【００４９】
さらに、本発明の薄膜圧電体素子の製造方法は、上記記載のいずれかの薄膜圧電体素子の製造方法であって、対向電極膜を形成した後に対向電極膜の全面にレジスト膜を形成し、対向電極膜上に散在する突起物周辺のレジスト膜を選択的に除去した後、突起物周辺の対向電極膜をエッチング除去する工程をさらに含む方法からなる。
【００５０】
この方法により、圧電体薄膜を成膜するときに主として発生する突起物による圧電特性の劣化を防止でき、高信頼性の薄膜圧電体素子を実現できる。
【００５１】
【発明の実施の形態】
以下、本発明の実施の形態の薄膜圧電体素子について、図面を用いて詳細に説明する。
【００５２】
（第１の実施の形態）
図１に、本発明の第１の実施の形態の一対構成の薄膜圧電体素子からなるアクチュエータの平面図を示す。このアクチュエータは磁気ディスク記録再生装置において、ヘッドスライダをディスク上の所定のトラック位置に高精度に微小位置決めするために用いられる。図１に示すアクチュエータは２個の薄膜圧電体素子２Ａ、２Ｂ（以下、右側の薄膜圧電体素子を右側素子２Ａとよび、左側の薄膜圧電体素子を左側素子２Ｂとよぶ）を備えている。これら一対の右側素子２Ａと左側素子２ＢとはＡ−Ａ’線に対して、接続配線の領域を除いて互いが鏡像の関係の構造を有し、接着樹脂層（図示せず）によりフレクシャー１４０に接着固定されている。接着固定後、右側素子２Ａと左側素子２Ｂとに設けられた接続電極パッド１３０、１３２とフレクシャー１４０に設けられた圧電体電極パッド１０、１２とが、例えばワイヤリード１４、１６でそれぞれ接続される。さらに、この圧電体電極パッド１０、１２から引き回された圧電体電極配線２４により、図示しない制御回路に接続されており、これらによりアクチュエータが構成される。
【００５３】
フレクシャー１４０は、右側素子２Ａと左側素子２Ｂとを接着している領域から延在してヘッドスライダ（図示せず）を固定するためのスライダ保持部１８を有している。このスライダ保持部１８には、ヘッドスライダに搭載されているヘッド素子（図示せず）の配線部と接続するためのヘッド電極パッド２０が設けられている。このヘッド電極パッド２０からは、ヘッド電極配線２２が右側素子２Ａと左側素子２Ｂ間のフレクシャー１４０上を引き回され、圧電体電極パッド１０、１２から引き回された圧電体電極配線２４と同様に外部機器との接続パッド（図示せず）まで引き回されている。
【００５４】
このような構成のアクチュエータの動作について説明する。図示しない制御回路から右側素子２Ａと左側素子２Ｂの各々に逆極性の電圧を印加すれば、図２に例示するように右側素子２Ａが伸長すると、左側素子２Ｂは収縮する。これら２つの逆平行方向の変位がスライダ保持部１８に作用し、スライダ保持部１８はその合力を受けてＹ−Ｙ’線の方向に微動する。このような微動を高精度で制御することで、ヘッド素子をディスク（図示せず）上の所定のトラック位置に高精度で位置決めすることができる。例えば、右側素子２Ａと左側素子２Ｂの各々の圧電体薄膜の厚さを２．５μｍとし、それぞれの主電極膜と対向電極膜間に５ボルトの電圧を印加すれば、Ｙ−Ｙ’方向の磁気ヘッドの変位量を±０．８μｍとすることも可能である。
【００５５】
このアクチュエータを用いたディスク記録再生装置の要部斜視図を図３に示す。本実施の形態では、ハードディスクを用いた磁気ディスク記録再生装置の場合について説明する。磁気ディスク２８が主軸２６に固定され、回転手段３０により所定の回転数で回転駆動される。この回転手段としては、一般にスピンドルモータが使用される。磁気ディスク２８面側にフレクシャー（図示せず）が設けられたサスペンション３６がアーム３８に固定され、このアーム３８は軸受部４０で回転自在に軸支されている。ヘッドスライダ３２と、右側素子２Ａと左側素子２Ｂとからなる薄膜圧電体素子３４とはフレクシャーに固定されている。第１の位置決め手段４２によりアーム３８を揺動させ、ヘッドスライダ３２を磁気ディスク２８の所定のトラック位置に位置決めする。従来の磁気ディスク記録再生装置では、この第１の位置決め手段４２のみであったが、本実施の形態ではさらに上述したようなフレクシャーに取り付けた薄膜圧電体素子３４によりヘッドスライダ３２を微動させる。この微動は薄膜圧電体素子３４に印加する電圧により制御できるので、微小なトラック位置にも十分追従させることができ、さらに高密度の記録再生が可能となる。なお、磁気ディスク記録再生装置は、筐体４４と図示しない蓋により全体が覆われるようになっている。
【００５６】
右側素子２Ａと左側素子２Ｂとからなる薄膜圧電体素子３４の断面構造を図４に示す。図４（Ａ）は図１のＸ１−Ｘ１線に沿った断面形状を、図４（Ｂ）はＸ２−Ｘ２線に沿った断面形状をそれぞれ示す。図４および図１を用いて、薄膜圧電体素子３４の構造について、以下に説明する。なお、図１に示す要素と同じ要素については同じ符号を付している。以下、説明するために用いる図面についても同様である。
【００５７】
本実施の形態の薄膜圧電体素子３４は、右側素子２Ａと左側素子２Ｂとで構成されており、図１に示すＸ１−Ｘ１線近傍からスライダ保持部１８方向が圧電機能を生じる領域であり、図１からわかるように所定距離の中央線Ａ−Ａ’線に対して鏡面対称形状に形成されている。この部分では、図４からわかるように、右側素子２Ａは、第１主電極膜５０と第１対向電極膜５６とで挟まれた第１圧電体薄膜５２、および第２主電極膜６２と第２対向電極膜６８とで挟まれた第２圧電体薄膜６６が接着層７４で接着されて積層され、さらに全面を絶縁樹脂層９０で覆った構成を有している。なお、本実施の形態では、さらに特性の良好な圧電体薄膜を形成するために、第１主電極膜５０および第２主電極膜６２のそれぞれの表面上に圧電体薄膜シード層５４が設けられている。
【００５８】
また、左側素子２Ｂは、第３主電極膜７８と第３対向電極膜８０とで挟まれた第３圧電体薄膜７６、および第４主電極膜８８と第４対向電極膜８４とで挟まれた第４圧電体薄膜８６が接着層８２で接着されて積層され、さらに全面を絶縁樹脂層９０で覆った構成を有している。また、同様に、第３主電極膜７８および第４主電極膜８８のそれぞれの表面上に圧電体薄膜シード層５４が設けられている。さらに、上記薄膜圧電体素子３４は、後述する製造方法で詳細に説明するが、同じ材料で同時に形成され、中央線Ａ−Ａ’線に対して鏡面対称形状としてあるので、右側素子２Ａと左側素子２Ｂのそれぞれの圧電特性もほぼ同じ特性とすることができる。なお、本実施の形態では、右側素子２Ａと左側素子２Ｂとを一体化するために、絶縁樹脂層９０と同じ材料によりスライダ保持部１８近傍にブリッジ９０ａと電極端子部分に接続部９０ｂとが設けられている。
【００５９】
なお、右側素子２Ａと左側素子２Ｂとは、接着層１４２でフレクシャー１４０に固着されている。
【００６０】
つぎに、薄膜圧電体素子３４の電極端子の構造について説明する。
【００６１】
Ｘ１−Ｘ１線に沿った断面部では、第４主電極膜８８の開口部８８ａ、第３主電極膜７８の延在部７８ａに設けられた開口部７８ｂ、ヴィアホール７０を介して第２対向電極膜６８に接続されている第２分離電極部７２の開口部７２ａ、および同様にヴィアホール５８を介して第１対向電極膜５６に接続された第１分離電極部６０の延在部６０ａに設けられた開口部６０ｂが、第１の接続配線９７により接続されている。
【００６２】
また、Ｘ２−Ｘ２線に沿った断面部では、第１主電極膜５０の延在部５０ａに設けられた開口部５０ｂ、第２主電極膜６２の開口部６２ａ、ヴィアホール１１６を介して第３対向電極膜８０に接続された第３分離電極部１０６の延在部１０６ａに設けられた開口部１０６ｂ、および同様にヴィアホール１１０を介して第４対向電極膜８４に接続された第４分離電極部１１２の開口部１１２ａが第２の接続配線１２８により接続されている。
【００６３】
さらに、フレクシャー１４０上の圧電体電極パッド１０、１２と接続するための接続電極パッド１３０、１３２が第１主電極膜５０と第３主電極膜７８をそれぞれ一部が露出するように延在して形成されている。この構成により、右側素子２Ａと左側素子２Ｂとが積層構成でありながら、制御回路との接続端子は２個のみとすることができる。
【００６４】
なお、本実施の形態では、接続電極パッド１３０、１３２を第１主電極膜５０と第３主電極膜７８をそれぞれ一部が露出するように延在して形成したが、本発明はこれに限定されるものではない。例えば、第２主電極膜６２と第４主電極膜８８に接続電極パッドを設けてもよいし、また第１の接続配線９７と第２の接続配線１２８とに設けてもよい。
【００６５】
つぎに、本実施の形態の薄膜圧電体素子の製造方法を図５から図１０の工程図を用いて説明する。図５（Ａ）から図５（Ｄ）までは、第１の基板１５０と第２の基板１５２のそれぞれにおいて薄膜形成と所定のパターン加工を行う工程を説明する平面図である。さらに、図６（Ａ）から図６（Ｄ）までは、図５（Ａ）から図５（Ｄ）までにそれぞれ対応した図５（Ｂ）に示すＸ１―Ｘ１線に沿った断面図である。図５（Ａ）から図５（Ｄ）までの左側の図と、図６（Ａ）から図６（Ｄ）までの左側の図は第１の基板１５０上での工程を説明する図であり、図５（Ａ）から図５（Ｄ）までの右側の図と、図６（Ａ）から図６（Ｄ）までの右側の図は第２の基板１５２上での工程を説明する図である。
【００６６】
図５（Ａ）および図６（Ａ）に示すように、第１の基板１５０と第２の基板１５２上に、第１主電極膜５０と第３主電極膜７８を形成するための主電極膜５００、および第２主電極膜６２と第４主電極膜８８を形成するための主電極膜６２０をそれぞれ形成する。さらに、これらの主電極膜５００、６２０上に圧電体薄膜シード層５４を形成する。この圧電体薄膜シード層５４は主電極膜５００、６２０上に形成し、この面上に形成する圧電体薄膜の配向性を向上させるために設けるものであるが、必ずしも必要ではない。すなわち、主電極膜５００、６２０上に直接圧電体薄膜を形成してもよい。
【００６７】
なお、第１の基板１５０と第２の基板１５２としては、例えば酸化マグネシウム（ＭｇＯ）単結晶基板、シリコン（Ｓｉ）単結晶基板、チタン酸ストロンチウム（ＳｒＴｉＯ３）単結晶基板、またはサファイヤ基板等を用いることができる。また、主電極膜５００、６２０としては、白金（Ｐｔ）薄膜が好適であるが、さらに金（Ａｕ）、イリジウム（Ｉｒ）、ロジウム（Ｒｈ）、ルテニウム（Ｒｕ）、銀（Ａｇ）、レニウム（Ｒｅ）、およびパラジウム（Ｐｄ）のうちのいずれかの金属、あるいはその酸化物を用いてもよい。さらに、圧電体薄膜シード層５４としては、チタン酸ジルコン酸鉛（ＰＺＴ）薄膜やチタン酸ランタン酸鉛（ＰＬＴ）薄膜等を数１０ｎｍ程度形成すればよい。
【００６８】
つぎに、圧電体薄膜シード層５４と主電極膜５００、６２０の所定領域の一部をフォトリソとエッチングプロセスにより除去する。これを、図５（Ｂ）と図６（Ｂ）に示す。本実施の形態では、図５からわかるように、第１の基板１５０側では逆Ｓ字形状で、第２の基板１５２側ではＳ字形状にエッチングしている。
【００６９】
このような加工を行った後、図５（Ｃ）と図６（Ｃ）に示すように、第１の基板１５０上では、第１圧電体薄膜５２と第３圧電体薄膜７６となる圧電体薄膜５２０と、第２の基板１５２上では、第２圧電体薄膜６６と第４圧電体薄膜８６となる圧電体薄膜６６０とを形成する。この圧電体薄膜５２０、６６０としては、チタン酸ジルコン酸鉛（ＰＺＴ）薄膜、チタン酸ジルコン酸鉛（ＰＬＺＴ）薄膜またはチタン酸バリウム（ＢａＴｉＯ３）薄膜等の圧電性を有する薄膜を用いることができる。
【００７０】
つぎに、図５（Ｄ）と図６（Ｄ）に示すように、第１の基板１５０上では逆Ｓ字形状にエッチングされた所定領域部において、圧電体薄膜５２０をエッチングして主電極膜５００に達するヴィアホール５８、１１６を形成し、さらにその後第１対向電極膜５６と第３対向電極膜８０となる対向電極膜５６０を形成する。この対向電極膜５６０の形成時にヴィアホール５８、１１６部分にも成膜されて、対向電極膜５６０と主電極膜５００とが導通される。
【００７１】
第２の基板１５２上でも同様にＳ字形状にエッチングされた所定領域部において、圧電体薄膜６６０をエッチングして主電極膜６２０に達するヴィアホール７０、１１０を形成し、さらにその後第２対向電極膜６８と第４対向電極膜８４となる対向電極膜６８０を形成する。この対向電極膜６８０の形成時にヴィアホール７０、１１０部分にも成膜されて、対向電極膜６８０と主電極膜６２０とが導通される。
【００７２】
なお、圧電体薄膜５２０、６６０のエッチングは、ドライエッチングまたはウエットエッチングのどちらでも可能である。また、対向電極膜５６０、６８０としては良好な導電性を有し、選択的にエッチング可能であれば、金属単層膜や合金膜が使用できる。また、これらの材料の上に金（Ａｕ）、銀（Ａｇ）、あるいは銅（Ｃｕ）等の材料を積層した多層膜構成でもよい。
【００７３】
上記のプロセスを経ることで、第１の基板１５０と第２の基板１５２上での成膜およびパターン加工は終了する。図７と図８とは、これら２枚の基板を貼り合わせて一体化して加工する工程を説明するための図であり、図７（Ａ）から図７（Ｄ）までは平面図、図８（Ａ）から図８（Ｄ）までは、図７（Ａ）から図７（Ｄ）までにそれぞれ対応した図７（Ｂ）に示すＸ１−Ｘ１線に沿った断面図である。図７（Ａ）と図８（Ａ）は、これら２枚の基板同士を位置合せして接着層７４０により接着した状態を示す。
【００７４】
つぎに、第１の基板１５０と第２の基板１５２とで挟まれた状態から、第２の基板１５２のみを選択的に除去する。この除去方法としては、エッチング、研磨または所定の厚さまで研磨後エッチングする等の方法により行うことができる。第１の基板１５０と第２の基板１５２とが同一の材料である場合には、これらの基板をエッチング除去する薬液で侵されない樹脂で第１の基板１５０の表面全体を覆うように塗布した後にエッチングすればよい。第２の基板１５２を除去すると、図７（Ｂ）および図８（Ｂ）に示すように、第１の基板１５０上に、主電極膜５００と対向電極膜５６０とで挟まれた圧電体薄膜５２０と、主電極膜６２０と対向電極膜６８０とで挟まれた圧電体薄膜６６０とが、接着層７４０で接着された構造が露出する。なお、それぞれ圧電体薄膜シード層５４もあるが、この膜は圧電体薄膜５２０、６６０と一体で加工されるので、特に説明しない限りこれらの膜と同じ加工をされるものとする。
【００７５】
この構造とした後に、右側素子２Ａと左側素子２Ｂとを形成するためのエッチングを行う。図７（Ｃ）および図８（Ｃ）は、第１の基板１５０上の主電極膜５００のみを残してエッチングを行った状態を示す。このエッチングにより、第２の基板１５２上で形成された主電極膜６２０、圧電体薄膜６６０および対向電極膜６８０と、第１の基板１５０上で形成された対向電極膜５６０および圧電体薄膜５２０とがエッチングされ、右側素子２Ａと左側素子２Ｂとを構成する形状が作製される。
【００７６】
すなわち、右側素子２Ａとなる領域部では、第１圧電体薄膜５２、第１対向電極膜５６、接着層７４、第２対向電極膜６８、第２圧電体薄膜６６、第２主電極膜６２とがほぼ同一形状に加工される。この加工により同時に、第２主電極膜６２の所定領域部は第２主電極膜６２とは分離され、第２分離電極部７２が形成される。この第２分離電極部７２は、ヴィアホール７０を介して第２対向電極膜６８と電気的に接続されている。一方、左側素子２Ｂとなる領域部では、第３圧電体薄膜７６、第３対向電極膜８０、接着層８２、第４対向電極膜８４、第４圧電体薄膜８６、第４主電極膜８８とがほぼ同一形状に加工される。この加工により同時に、第４主電極膜８８の所定領域部は第４主電極膜８８とは分離され、第４分離電極部１１２が形成される。この第４分離電極部１１２は、ヴィアホール１１０を介して第４対向電極膜８４と電気的に接続されている。
【００７７】
さらに、この加工後、図７（Ｄ）および図８（Ｄ）に示すように、第１の基板１５０上の主電極膜５００をエッチング加工する。このパターン加工においては、図７、図８からわかるように、この主電極膜５００上に形成した構造よりもやや幅広に形成する。
【００７８】
このとき、右側素子２Ａとなる領域部では、第１主電極膜５０の所定領域部は第１主電極膜５０とは分離され、第１分離電極部６０が形成されるが、この第１分離電極部６０は露出した延在部６０ａを有するように加工される。また、第１主電極膜５０の一部も所定の領域部でエッチングされ、露出した延在部５０ａが形成される。
【００７９】
さらに、左側素子２Ｂとなる領域部では、第３主電極膜７８の所定領域部は第３主電極膜７８とは分離され、第３分離電極部１０６が形成されるが、この第３分離電極部１０６は露出した延在部１０６ａを有するように加工される。また、第３主電極膜７８の一部も所定の領域部でエッチングされ、露出した延在部７８ａが形成される。
【００８０】
つぎに、図９および図１０を用いて、一対構成の薄膜圧電体素子３４とする工程について説明する。図９は主要工程の平面図で、図１０（Ａ）、図１０（Ｂ）は図９のそれぞれの工程に対応したＸ１−Ｘ１線に沿った断面図で、図１０（Ｃ）は同様にＸ２−Ｘ２線に沿った断面図である。
【００８１】
図９（Ａ）および図１０（Ａ）に示すように、上述したように作製した構造体表面を覆うように絶縁樹脂層９０を形成した後、エッチングによって所定の形状とする。このときに、第１主電極膜５０の開口部５０ｂ、第２主電極膜６２の開口部６２ａ、第３分離電極部１０６の開口部１０６ｂ、第４分離電極部１１２の開口部１１２ａ、第３主電極膜７８の開口部７８ｂ、第４主電極膜８８の開口部８８ａ、第１分離電極部６０の開口部６０ｂおよび第２分離電極部７２の開口部７２ａがエッチングにより形成される。さらに、同時に、右側素子２Ａと左側素子２Ｂとを一体化するためのブリッジ９０ａと接続部９０ｂも形成される。また、一対の薄膜圧電体素子３４をフレクシャー１４０の圧電体電極パッド１０、１２に接続するための開口部１３０ａ、１３２ａも同じように加工される。
【００８２】
なお、絶縁樹脂層９０には、例えば液状のプレイミド樹脂溶液をスピンナで塗布し１２０℃で乾燥させた後に、２５０℃で加熱してポリイミド化した膜を用いることができる。これだけでなく、その他の有機高分子材料を塗布して熱硬化または光硬化させて形成してもよい。ただし、この絶縁樹脂層９０は図９、図１０からわかるように、第１の主電極膜と第１の対向電極膜のいずれにも接触するので十分な電気絶縁性が要求されるだけでなく、所定の形状にエッチング加工できる材料であることが要求される。
【００８３】
つぎに、図９（Ｂ）、図１０（Ｂ）および図１０（Ｃ）を用いて、接続配線と外部接続パッド形成工程に関して説明する。なお、図１０（Ｂ）はＸ１−Ｘ１線に断面図であり、図１０（Ｃ）はＸ２−Ｘ２線に沿った断面図である。
【００８４】
図１０（Ｂ）に示すようにＸ１−Ｘ１線に沿った断面部分では、第３主電極膜７８の開口部７８ｂ、第４主電極膜８８の開口部８８ａ、第１分離電極部６０の開口部６０ｂおよび第２分離電極部７２の開口部７２ａとを接続する第１の接続配線９７が形成される。また、図１０（Ｃ）に示すようにＸ２−Ｘ２線に沿った断面部分では、第１主電極膜５０の開口部５０ｂ、第２主電極膜６２の開口部６２ａ、第３分離電極部１０６の開口部１０６ｂおよび第４分離電極部１１２の開口部１１２ａとを接続する第２の接続配線１２８が形成される。さらに、開口部１３０ａ、１３２ａ部分についても、同じ配線電極材料により、接続電極パッド１３０、１３２が形成される。
【００８５】
このようにして形成した右側素子２Ａと左側素子２Ｂとからなる薄膜圧電体素子３４が第１の基板１５０上で完成される。この後、この薄膜圧電体素子３４の全体をワックス等の樹脂（図示せず）で保護した後、第１の基板１５０をエッチングして除去し、さらに薄膜圧電体素子３４の表面に付着しているワックス等の樹脂を溶解除去すれば、基板から完全に分離した形態の薄膜圧電体素子３４が得られる。
【００８６】
なお、本実施の形態では、第１の基板１５０および第２の基板１５２上で作製する薄膜圧電体素子３４は１個のみで説明したが、実際にはこれらの基板上に複数個の薄膜圧電体素子を形成することが量産性の向上を図るために行われる。
【００８７】
また、本実施の形態では、第３主電極膜７８の延在部７８ａと第１分離電極部６０の延在部６０ａ、および第１主電極膜５０の延在部５０ａと第３分離電極部１０６の延在部１０６ａとは、それぞれ分離したが、これらはそれぞれ同じ主電極膜から加工されており、最終的には第１の接続配線９７と第２の接続配線１２８とで接続されるので、分離せずにつながった状態としておいてもよい。また、本実施の形態では、一対構成の薄膜圧電体素子について説明したが、一つのみの場合であってもよい。
【００８８】
（第２の実施の形態）
本発明の第２の実施の形態の薄膜圧電体素子は、第１の実施の形態の薄膜圧電体素子に対して対向電極膜同士の接着を導電性を有する接着剤を用いることが特徴である。以下、第１の実施の形態と異なる構造および製造工程を主体として、図１１および図１２を用いて説明する。
【００８９】
図１１は、第１の実施の形態と同様に第１の基板１５０上に一対の薄膜圧電体素子３４０を形成した状態を示す。
【００９０】
本実施の形態では、右側素子２０Ａについては、第２主電極膜６２の所定領域部に第２分離電極部７２が形成され、この第２分離電極部７２はヴィアホール７０を介して第２対向電極膜６８と電気的に接続されている。この構成は第１の実施の形態と同様である。それに対して、第１対向電極膜５６は導電性の接着層２０４を介して第２対向電極膜６８と電気的に接続されるので、第１圧電体薄膜５２側にはヴィアホールと分離電極部とは形成されていない。一方、左側素子２０Ｂについては、第４主電極膜８８の所定領域部に第４分離電極部１１２が形成され、この第４分離電極部１１２はヴィアホール１１０を介して第４対向電極膜８４と電気的に接続されている。これも第１の実施の形態と同様である。しかし、第３対向電極膜８０は導電性の接着層２２４を介して第４対向電極膜８４と電気的に接続されるので、第３圧電体薄膜７６側にはヴィアホールと分離電極部とは形成されていない。
【００９１】
さらに、図１２（Ａ）に示すＸ１−Ｘ１線に沿った断面部分では、第３主電極膜７８の開口部７８ｂ、第４主電極膜８８の開口部８８ａ、および第２分離電極部７２の開口部７２ａとを接続する第１の接続配線９７が設けられている。また、図１２（Ｂ）に示すＸ２−Ｘ２線に沿った断面部分では、第１主電極膜５０の開口部５０ｂ、第２主電極膜６２の開口部６２ａ、および第４分離電極部１１２の開口部１１２ａとを接続する第２の接続配線１２８が設けられている。さらに、開口部１３０ａ、１３２ａ部分についても、同じ配線電極材料により、接続電極パッド１３０、１３２が形成される。
【００９２】
以上のようにして、本実施の形態の薄膜圧電体素子３４０が第１の基板１５０上で作製される。このようにして作製された薄膜圧電体素子３４０を第１の基板１５０から除去してフレクシャー１４０に接着固定すれば、第１の実施の形態の薄膜圧電体素子３４と同様な機能および特性を有するアクチュエータが実現できる。
【００９３】
つぎに、本実施の形態の薄膜圧電体素子３４０の製造方法について、第１の実施の形態と異なる点を主体に説明する。
【００９４】
図１１および図１２に示すように、本実施の形態の製造方法においては、第２の基板上での成膜および所定の形状に加工する工程は第１の実施の形態とまったく同じであるので、説明は省略する。一方、第１の基板１５０上では、単純に第１主電極膜５０と第３主電極膜７８となる主電極膜５００、第１圧電体薄膜５２と第３圧電体薄膜７６となる圧電体薄膜５２０、および第１対向電極膜５６と第３対向電極膜８０となる対向電極膜５６０を所定の厚さに形成するのみでよい。
【００９５】
第１の基板１５０上と第２の基板上でのそれぞれの成膜と加工を終了後、対向電極膜同士を導電性の接着層により接着する。この接着層２０４、２２４により、第１の基板１５０上での対向電極膜と第２の基板上での対向電極膜とは機械的な接着と同時に電気的にも接続される。このための接着層２０４、２２４としては、一般的な導電性接着剤による接着接合、対向電極膜表面同士をはんだ付けによる接合、または対向電極膜表面の一方の面に、例えば金（Ａｕ）膜を形成し、もう一方の面にスズ（Ｓｎ）膜を形成して、これらを圧着加熱して合金化により接合する方法等を用いることができる。
【００９６】
このような接着接合後、第１の実施の形態と同様に第２の基板を除去し、露出した構造体を所定の形状に加工するが、これらの工程は第１の実施の形態と同様であるので説明は省略する。
【００９７】
さらに、第１の実施の形態と同様に、作製した構造体表面を覆うように絶縁樹脂層９０を形成した後、エッチングによって所定の形状とする。このときに、第１主電極膜５０の開口部５０ｂ、第２主電極膜６２の開口部６２ａ、第４分離電極部１１２の開口部１１２ａ、第３主電極膜７８の開口部７８ｂ、第４主電極膜８８の開口部８８ａ、および第２分離電極部７２の開口部７２ａが絶縁性樹脂層９０をエッチングして形成される。さらに、同時に、右側素子２０Ａと左側素子２０Ｂとを一体化するためのブリッジ９０ａと接続部９０ｂも形成される。また、一対の薄膜圧電体素子３４０をフレクシャー１４０の圧電体電極パッド１０、１２に接続するための開口部１３０ａ、１３２ａも同じように加工される。
【００９８】
このようにして右側素子２０Ａと左側素子２０Ｂとからなる薄膜圧電体素子３４０が第１の基板１５０上で完成される。この後、この薄膜圧電体素子３４０の全体をワックス等の樹脂（図示せず）で保護した後、第１の基板１５０をエッチングして除去し、さらに薄膜圧電体素子３４０の表面に付着しているワックス等の樹脂を溶解除去すれば、基板から完全に分離した形態の薄膜圧電体素子３４０が得られる。
【００９９】
なお、本実施の形態では、第１の実施の形態で用いた圧電体薄膜シード層５４は設けずに、主電極膜上に直接圧電体薄膜を形成する製造方法を用いている。また、本実施の形態では、第２の基板側にヴィアホールを形成し、分離電極部を形成したが、逆に第１の基板側にヴィアホールを形成し、分離電極部を形成するようにしてもよい。
【０１００】
本実施の形態では、２枚の基板のうち１枚の基板のみについて、ヴィアホール形成と分離電極部の加工を行えばよいので、第１の実施の形態に比べて工程が簡単となり、歩留まりが改善される。また、本実施の形態では一対構成としたが、一個のみとしてもよい。
【０１０１】
（第３の実施の形態）
本発明の第３の実施の形態の薄膜圧電体素子およびその製造方法は、主電極膜と対向電極膜で挟まれた圧電体薄膜を一層構成としたことが、第１の実施の形態と第２の実施の形態とは異なる。以下、第１の実施の形態と異なる工程について、図１３および図１４を用いて説明する。
【０１０２】
図１３は、第１の基板１５０上で一対の薄膜圧電体素子３４５を作製した状態を示す平面図である。また、図１４（Ａ）は、そのＸ１−Ｘ１線に沿った断面図で、図１４（Ｂ）はそのＸ２−Ｘ２線に沿った断面図である。図１３、図１４からわかるように、本実施の形態の薄膜圧電体素子３４５は、右側素子２５Ａと左側素子２５Ｂとで構成されている。右側素子２５Ａは、第１主電極膜５０と第１対向電極膜５６とで挟まれた第１圧電体薄膜５２からなる単層構成であり、また左側素子２５Ｂは第３主電極膜７８と第３対向電極膜８０で挟まれた第３圧電体薄膜７６とからなる単層膜構成である。
【０１０３】
図１４（Ａ）に示すＸ１−Ｘ１線に沿った断面部分では、右側素子２５Ａの第１対向電極膜５６はヴィアホール５８を介して、第１主電極膜５０の第１分離電極部６０に接続されている。さらに、この第１分離電極部６０の延在部６０ａは、左側素子２５Ｂの第３主電極膜７８の延在部７８ａと接続されている。また、図１４（Ｂ）に示すＸ２−Ｘ２線に沿った断面部分では、左側素子２５Ｂの第３対向電極膜８０はヴィアホール１１６を介して、第３主電極膜７８の第３分離電極部１０６に接続されている。さらに、この第３分離電極部１０６の延在部１０６ａは、右側素子２５Ａの第１主電極膜５０の延在部５０ａと接続されている。これらは、主電極膜のパターン形成時に、これらの領域部が接続されるようにフォトマスクを変更すれば容易に加工できる。これにより、第１の実施の形態と第２の実施の形態では第１の接続配線と第２の接続配線を形成したが、本実施の形態ではこれらが不要となる。これらの製造方法については、第１の実施の形態における第１の基板上での加工工程とほぼ同じであるので、製造方法については説明を省略する。
【０１０４】
このため、接続電極パッド１３０、１３２についても、主電極膜をそのまま用いれば、製造工程が簡略化できる。
【０１０５】
本実施の形態では、ヴィアホールを介して右側素子の対向電極膜と左側素子の主電極膜との接続、および右側素子の主電極膜と左側素子の対向電極膜との接続を行っており、圧電体電極パッドを２個のみとすることができる。また、本実施の形態においても一対構成だけでなく、１個のみの構成としてもよい。
【０１０６】
（第４の実施の形態）
本発明の薄膜圧電体素子を作製する場合において、特に圧電体薄膜は２μｍ〜５μｍ程度の厚さに形成するため、成膜時に突起状の異物が生じやすく、この突起物により絶縁不良が発生して製造歩留まりを悪化させる原因となっている。本発明の第４の実施の形態の薄膜圧電体素子の製造方法では、圧電体薄膜形成時に生じる突起物による製造歩留まりの悪化を防止する方法について、図１５を用いて説明する。
【０１０７】
図１５（Ａ）は、第１の実施の形態の製造方法における図５（Ｄ）に示す平面図と同じ形状まで加工した状態を示す平面図である。すなわち、第１の基板１５０上には、主電極膜５００、圧電体薄膜シード層５４および圧電体薄膜５２０を形成後、ヴィアホール５８を加工した後、対向電極膜５６０が成膜された状態を示す。図１５（Ｂ）はその断面図であり、図１５（Ｃ）は突起物２４０の周辺部の対向電極膜５６０をエッチングした状態を示す断面図である。
【０１０８】
図１５（Ａ）および図１５（Ｂ）からわかるように、対向電極膜５６０の表面には突起物２４０が生じている。この突起物２４０は、主として圧電体薄膜５２０をスパッタリングで高速成膜する場合に生じやすく、１枚の基板中に数個から数１０個程度生じることがある。スパッタリングで圧電体薄膜５２０を高速成膜する場合には、成膜源となるターゲットに対して大きな電力を印加するためにターゲット表面で異常放電が生じると、ターゲットを構成する燒結粒子が直接飛散してしまい、基板上に突起物２４０を形成するものである。このような突起物２４０が生じると、この領域部では連続的な膜形成が行われなくなるので、主電極膜５００と対向電極膜５６０との間の絶縁性が低下したり、圧電特性の経時劣化が生じやすくなる。
【０１０９】
本実施の形態の製造方法は、この突起物２４０による不良を防止するための工程を対向電極膜５６０形成後に行うことが、第１の実施の形態と異なる点である。具体的には、対向電極膜５６０表面上にフォトレジスト膜を塗布した後、突起物２４０を含む周辺部のみのフォトレジスト膜を除去して、露出した対向電極膜５６０部分のみをエッチングする。このエッチング後の断面状態を図１５（Ｃ）に示すが、突起物２４０の周辺部では対向電極膜５６０が除去されている。このエッチングにより、圧電体薄膜５２０を挟む主電極膜５００と対向電極膜５６０間に電圧を印加しても、この突起物２４０近傍には電界が印加されることがなくなる。したがって、絶縁性の低下や圧電特性の劣化が生じることがなくなる。
【０１１０】
なお、突起物２４０の周辺部のみのフォトレジスト膜を除去するためには、この周辺部のみに露光すればよく、紫外線をスポット状に絞り、突起物２４０周辺部のみ照射すること等により行うことができる。
【０１１１】
【発明の効果】
本発明の薄膜圧電体素子は、主電極膜と、主電極膜上に形成された圧電体薄膜と、圧電体薄膜上に形成された対向電極膜とからなり、主電極膜はその一部が島状に主電極膜とは分離された分離電極部を構成し、分離電極部において、圧電体薄膜に設けられたヴィアホールを介して分離電極部と対向電極膜とが電気的に接続され、かつ分離電極部と主電極膜とは圧電体薄膜よりも突出する形状の延在部を有する構成からなる。
【０１１２】
さらに本発明の薄膜圧電体素子は、第１主電極膜と第１対向電極膜とで挟まれた第１圧電体薄膜と、第２主電極膜と第２対向電極膜とで挟まれ第１圧電体薄膜と同じ形状の第２圧電体薄膜とが、第１対向電極膜と第２対向電極膜とを対向させて接着層により接着された構成からなり、第１主電極膜と第２主電極膜はそれぞれその一部が島状に分離された分離電極部を構成し、第１主電極膜と第２主電極膜の分離電極部において、第１圧電体薄膜と第２圧電体薄膜とにそれぞれ設けられたヴィアホールを介して第１主電極膜の分離電極部と第１対向電極膜、および第２主電極膜の分離電極部と第２対向電極膜とがそれぞれ電気的に接続され、かつ、第１主電極膜の分離電極部と第１主電極膜とはそれぞれ第１圧電体薄膜よりも突出する形状の延在部を有する構成からなる。
【０１１３】
また、これらの薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成とし、一対の薄膜圧電体素子の圧電機能を生じる領域部は所定距離の中央線を中心として鏡面対称であり、一方の薄膜圧電体素子の分離電極部の延在部、他方の薄膜圧電体素子の主電極膜の延在部、一方の薄膜圧電体素子の主電極膜の延在部および他方の薄膜圧電体素子の分離電極部の延在部が上記所定距離の間の面上に近接して配置された構成からなる。
【０１１４】
この構成により、対向電極膜と主電極膜とを制御回路に接続する端子電極を延在部に設けることができる。この延在部は同一面上で、かつ近接して配置できるので、制御回路への配線引き回しと実装作業が容易に行える。また、ヴィアホール加工と圧電体薄膜の外形加工とは別々に行えるので、精度が要求されるヴィアホール加工をドライエッチングで行っても、対向電極膜と主電極膜間でのショート等の不良発生を抑制できる。さらに、薄膜圧電体素子が１個のみの場合に比べて変位量を大きくすることが可能となる。さらに、それぞれの薄膜圧電体素子が逆方向に変位するように電圧を印加すれば、薄膜圧電体素子の長さ方向に対して直交する方向に、例えば磁気ヘッドを微動させることもできるという大きな効果を奏する。
【図面の簡単な説明】
【図１】本発明の第１の実施の形態の一対構成の薄膜圧電体素子からなるアクチュエータの平面図
【図２】同実施の形態のアクチュエータの動作を説明する概念図
【図３】同実施の形態のアクチュエータを用いた磁気ディスク記録再生装置の要部斜視図
【図４】（Ａ）同実施の形態の薄膜圧電体素子の図１に示すＸ１−Ｘ１線に沿った断面図（Ｂ）同実施の形態の薄膜圧電体素子の図１に示すＸ２−Ｘ２線に沿った断面図
【図５】同実施の形態の薄膜圧電体素子の製造方法において、第１の基板と第２の基板のそれぞれにおいて、薄膜形成と所定のパターン加工を行う工程を説明する平面図
【図６】同製造方法において、図５のそれぞれに対応した工程の図５に示すＸ１−Ｘ１線に沿った断面図
【図７】同製造方法において、２枚の基板を貼り合わせて一体化して加工する工程を説明するための平面図
【図８】同製造方法において、図７のそれぞれに対応した工程の図７に示すＸ１−Ｘ１線に沿った断面図
【図９】同製造方法において、一対構成の薄膜圧電体素子とする主要工程の平面図
【図１０】同製造方法において、図９のそれぞれの工程に対応した図９に示すＸ１−Ｘ１線とＸ２−Ｘ２線に沿った断面図
【図１１】本発明の第２の実施の形態の薄膜圧電体素子の製造方法により、第１の基板上に形成された薄膜圧電体素子を示す平面図
【図１２】同実施の形態の製造方法により、第１の基板上に形成された薄膜圧電体素子の図１１に示すＸ１−Ｘ１線とＸ２−Ｘ２線に沿った断面図
【図１３】本発明の第３の実施の形態の薄膜圧電体素子の製造方法により、第１の基板上に形成された薄膜圧電体素子を示す平面図
【図１４】同実施の形態の製造方法により、第１の基板上に形成された薄膜圧電体素子の図１３に示すＸ１−Ｘ１線とＸ２−Ｘ２線に沿った断面図
【図１５】本発明の第４の実施の形態の薄膜圧電体素子の製造方法により、対向電極膜表面に発生する突起物周辺部の対向電極膜をエッチング除去する工程を説明するための図
【符号の説明】
２Ａ，２０Ａ，２５Ａ 右側素子
２Ｂ，２０Ｂ，２５Ｂ 左側素子
１０，１２ 圧電体電極パッド
１４，１６ ワイヤリード
１８ スライダ保持部
２０ ヘッド電極パッド
２２ ヘッド電極配線
２４ 圧電体電極配線
２６ 主軸
２８ 磁気ディスク
３０ 回転手段
３２ ヘッドスライダ
３４，３４０，３４５ 薄膜圧電体素子
３６ サスペンション
３８ アーム
４０ 軸受部
４２ 第１の位置決め手段
４４ 筐体
５０ 第１主電極膜
５０ａ，６０ａ，７８ａ，１０６ａ 延在部
５０ｂ，６０ｂ，６２ａ，７２ａ，７８ｂ，８８ａ，１０６ｂ，１１２ａ，１３０ａ，１３２ａ 開口部
５２ 第１圧電体薄膜
５４ 圧電体薄膜シード層
５６ 第１対向電極膜
５８，７０，１１０，１１６ ヴィアホール
６０ 第１分離電極部
６２ 第２主電極膜
６６ 第２圧電体薄膜
６８ 第２対向電極膜
７２ 第２分離電極部
７４，８２，１４２，２０４，２２４，７４０ 接着層
７６ 第３圧電体薄膜
７８ 第３主電極膜
８０ 第３対向電極膜
８４ 第４対向電極膜
８６ 第４圧電体薄膜
８８ 第４主電極膜
９０ 絶縁樹脂層
９０ａ ブリッジ
９０ｂ 接続部
９７ 第１の接続配線
１０６ 第３分離電極部
１１２ 第４分離電極部
１２８ 第２の接続配線
１３０，１３２ 接続電極パッド
１４０ フレクシャー
１５０ 第１の基板
１５２ 第２の基板
２４０ 突起物
５００，６２０ 主電極膜
５２０，６６０ 圧電体薄膜
５６０，６８０ 対向電極膜[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a thin film piezoelectric element, a method for manufacturing the same, and an actuator using the same.
[0002]
[Prior art]
In recent years, with the advancement of semiconductor technology, efforts have been made to realize ultra-small micromachines by semiconductor manufacturing technology, and mechanical and electrical elements such as microactuators are in the spotlight. With such an element, a small and highly accurate mechanism part can be realized, and the productivity can be greatly improved by using a semiconductor process. In particular, microactuators using piezoelectric elements are applied for ink ejection in ink jet printers, minute positioning of head sliders in magnetic disk recording / reproducing apparatuses, and the like.
[0003]
For example, in a conventional magnetic disk recording / reproducing apparatus, a magnetic head for recording / reproducing information on / from a magnetic disk is mounted on a head slider, and the head slider is attached to an actuator arm. The actuator arm is swung by a voice coil motor (hereinafter referred to as VCM) to position the magnetic head at a predetermined track position on the magnetic disk and perform recording / reproduction. However, with the improvement in recording density, it has become impossible to ensure sufficient accuracy by positioning using only such a conventional VCM. For this reason, in addition to the VCM positioning means, technical development has been carried out to perform high-speed and high-precision positioning by micro-driving the head slider by micro-positioning means using piezoelectric elements.
[0004]
As described above, actuators using piezoelectric elements are expected to have various applications. On the other hand, Patent Document 1 discloses a thin film stacked actuator that is small in size, can be driven at a low voltage, and has a large displacement, and a method for manufacturing the same. That is, magnesium oxide (MgO), strontium titanate (SrTiO) 3 Or an electrode layer of platinum (Pt), aluminum (Al), gold (Au), silver (Ag), etc., and lead zirconate titanate (PZT) or zirconate titanate on a single crystal substrate such as sapphire. A piezoelectric layer made of a piezoelectric material such as lead acid lanthanate (PLZT) and an electrode layer made of the same material as described above are formed. A piezoelectric layer is manufactured by forming a bonding layer made of glass or silicon (Si) on this film. Next, a step of bonding piezoelectric members to each other via a bonding layer by an anodic bonding method, a step of forming a bonding layer on the exposed electrode layer by removing the substrate on the side to be further laminated by polishing or the like, The bonding layer and the bonding layer of another piezoelectric member are bonded in the above-described procedure, and the step of removing the substrate again is repeated to form a laminated body laminated in a plurality of layers. Thereafter, the laminated actuator is realized by alternately taking out the inner layer electrodes in the laminated body from both sides.
[0005]
[Patent Document 1]
JP-A-8-88419
[0006]
[Problems to be solved by the invention]
However, in the above-described example, the internal electrodes in the laminated pair are alternately extracted from both sides, so that the displacement in the direction perpendicular to the substrate surface is generated. For this reason, for example, it is not suitable as a shape used as a micro actuator of a head slider of a magnetic disk recording / reproducing apparatus. That is, in order to cause displacement in the direction perpendicular to the film thickness direction while having a laminated structure, it is important to take out the inner electrode film. However, this point is also included in the above examples. Is not seen.
[0007]
The present invention has been made to solve such a problem. Particularly, in the case where two piezoelectric thin films are laminated, it is easy to take out the inner electrode film to the outside, and a pair of such thin film piezoelectric elements are provided. The present invention provides a thin film piezoelectric element that is excellent in mass productivity and can have only two electrode pads connected to an external device, a manufacturing method thereof, and an actuator using the thin film piezoelectric element.
[0008]
[Means for Solving the Problems]
In order to solve this problem, the thin film piezoelectric element of the present invention comprises a main electrode film, a piezoelectric thin film formed on the main electrode film, and a counter electrode film formed on the piezoelectric thin film. The electrode film constitutes a separation electrode part that is partly island-shaped and separated from the main electrode film. In the separation electrode part, the separation electrode part and the counter electrode film are formed via via holes provided in the piezoelectric thin film. Are electrically connected, and the separation electrode portion and the main electrode film have a configuration having an extending portion that protrudes more than the piezoelectric thin film.
[0009]
With this configuration, a terminal electrode that connects the counter electrode film and the main electrode film to the control circuit can be provided in the extending portion. Since the extending portions can be disposed on the same surface and close to each other, wiring to the control circuit and mounting work can be facilitated. In addition, via hole processing and piezoelectric thin film outer shape processing can be performed separately, so that even if via hole processing requiring high precision is performed by dry etching, defects such as shorts between the counter electrode film and the main electrode film occur. Can be suppressed.
[0010]
The thin film piezoelectric element of the present invention has a configuration in which a pair of the thin film piezoelectric elements described above are arranged on the same surface with a predetermined distance apart, and a region portion that generates a piezoelectric function of the pair of thin film piezoelectric elements. Is mirror-symmetric about a center line of a predetermined distance, and of the pair of thin film piezoelectric elements, the extension part of the separation electrode part of one thin film piezoelectric element and the extension of the main electrode film of the other thin film piezoelectric element And the extension part of the main electrode film of one thin film piezoelectric element and the extension part of the separation electrode part of the other thin film piezoelectric element are arranged close to each other on the surface between the predetermined distances. Become.
[0011]
With this configuration, it is possible to increase the amount of displacement compared to the case where there is only one thin film piezoelectric element. Further, if a voltage is applied so that each thin film piezoelectric element is displaced in the opposite direction, for example, the magnetic head can be finely moved in a direction perpendicular to the length direction of the thin film piezoelectric element.
[0012]
The thin film piezoelectric element of the present invention is the thin film piezoelectric element described above, and of the pair of thin film piezoelectric elements, the extending portion of the separation electrode portion of one thin film piezoelectric element and the other thin film piezoelectric element. The extension part of the main electrode film of the body element is disposed opposite to and electrically connected, and the extension part of the main electrode film of one thin film piezoelectric element and the separation electrode part of the other thin film piezoelectric element The extending portion is arranged opposite to and electrically connected.
[0013]
With this configuration, since only two terminal electrode portions for connecting the pair of thin film piezoelectric elements to the control circuit can be provided, the mounting operation can be simplified.
[0014]
The thin film piezoelectric element of the present invention includes a first piezoelectric thin film sandwiched between a first main electrode film and a first counter electrode film, and a second piezoelectric film sandwiched between a second main electrode film and a second counter electrode film. The second piezoelectric thin film having the same shape as the one piezoelectric thin film has a configuration in which the first counter electrode film and the second counter electrode film are opposed to each other and bonded by an adhesive layer. The first main electrode film and the second piezoelectric thin film Each of the main electrode films constitutes an isolation electrode part in which a part of the main electrode film is separated into an island shape. In each of the first main electrode film and the second main electrode film, the first piezoelectric thin film and the second piezoelectric film are formed. The separation electrode portion and the first counter electrode film of the first main electrode film, and the separation electrode portion and the second counter electrode film of the second main electrode film are electrically connected to each other through via holes provided in the body thin film, respectively. And the separation electrode portion of the first main electrode film and the first main electrode film protrude from the first piezoelectric thin film, respectively. Consisting configuration with an extending portion of the shape.
[0015]
With this structure, via hole processing and piezoelectric thin film outer shape processing can be performed separately, so even if via hole processing requiring high accuracy is performed by dry etching, defects such as a short circuit between the counter electrode film and the main electrode film Generation can be suppressed. Furthermore, because of the laminated structure, the force when the thin film piezoelectric element is displaced can be increased, and even when the thin film piezoelectric element is completely separated from the substrate, no warpage occurs, and reliability when used as an actuator is improved. Can greatly improve.
[0016]
The thin film piezoelectric element of the present invention has a configuration in which a pair of the thin film piezoelectric elements described above are arranged on the same surface with a predetermined distance apart, and a region portion that generates a piezoelectric function of the pair of thin film piezoelectric elements. Is mirror-symmetric about a center line of a predetermined distance, and of the pair of thin film piezoelectric elements, the extension part of the separation electrode part of the first main electrode film of one thin film piezoelectric element, and the other thin film piezoelectric element The extension part of the first main electrode film, the extension part of the first main electrode film of one thin film piezoelectric element, and the extension part of the separation electrode part of the first main electrode film of the other thin film piezoelectric element are described above. It consists of a structure arranged close to the surface for a predetermined distance.
[0017]
With this configuration, the terminal electrode portion for connecting to the control circuit for driving the thin film piezoelectric element can be provided in the extending portion, which can be efficiently performed when mounting with a wire lead or the like. In addition, since the external dimensions of the pair of thin film piezoelectric elements do not need to be changed because they are provided on the surface between the predetermined distances, the number of thin film piezoelectric elements that can be collectively manufactured on the substrate does not change, and the cost increases. There is no invitation.
[0018]
The thin film piezoelectric element of the present invention is the above-described thin film piezoelectric element, wherein one of the pair of thin film piezoelectric elements is an extension of the separation electrode portion of the first main electrode film of one thin film piezoelectric element. And the extending portion of the first main electrode film of the other thin film piezoelectric element are arranged to face each other, and the extending portion of the first main electrode film of one thin film piezoelectric element and the extending portion of the other thin film piezoelectric element The extending portion of the separation electrode portion of the first main electrode film is disposed opposite to the extending portion of the separating electrode portion of the first main electrode film of one thin film piezoelectric element, and the first portion of the thin film piezoelectric element of one thin film piezoelectric element. A first connection wiring that electrically connects the separation electrode portion of the two main electrode films, the extending portion of the first main electrode film of the other thin film piezoelectric element, and the second main electrode film of the other thin film piezoelectric element; The extension part of the separation electrode part of the first main electrode film of the other thin film piezoelectric element, the separation electrode part of the second main electrode film of the other thin film piezoelectric element, Consisting configuration and a second connection wiring electrically connecting the extending portion and the second main electrode film of one of the thin-film piezoelectric elements of the first main electrode layer of the piezoelectric element.
[0019]
With this configuration, even when a thin film piezoelectric element having a laminated structure is used as a pair, only two terminal electrodes can be connected to a control circuit for driving them, so that the mounting operation is greatly simplified. The
[0020]
The thin film piezoelectric element of the present invention includes a first piezoelectric thin film sandwiched between a first main electrode film and a first counter electrode film, and a second piezoelectric film sandwiched between a second main electrode film and a second counter electrode film. A first main electrode film having a configuration in which a second piezoelectric thin film having the same shape as the one piezoelectric thin film is bonded by a conductive adhesive layer with the first counter electrode film and the second counter electrode film facing each other. Constitutes an isolation electrode part that is partly separated into islands, and in the isolation electrode part of the first main electrode film, the first main electrode film is separated through a via hole provided in the first piezoelectric thin film. The electrode part, the first counter electrode film, and the second counter electrode film are electrically connected, and the separation electrode part of the first main electrode film and the first main electrode film protrude from the first piezoelectric thin film It has a configuration having an extending portion.
[0021]
With this configuration, the via hole processing and the processing of the separation electrode portion need only be the first main electrode film and the first piezoelectric thin film, and the manufacturing process can be greatly simplified. In addition, because of the laminated structure, the force when the thin film piezoelectric element is displaced can be increased, and even when the thin film piezoelectric element is completely separated from the substrate, no warpage occurs, and reliability when used as an actuator is improved. It can also be greatly improved.
[0022]
The thin film piezoelectric element of the present invention has a configuration in which a pair of the thin film piezoelectric elements described above are arranged on the same surface with a predetermined distance apart, and a region portion that generates a piezoelectric function of the pair of thin film piezoelectric elements. Is mirror-symmetric about a center line of a predetermined distance, and of the pair of thin film piezoelectric elements, the extension part of the separation electrode part of the first main electrode film of one thin film piezoelectric element, and the other thin film piezoelectric element The extension part of the first main electrode film, the extension part of the first main electrode film of one thin film piezoelectric element, and the extension part of the separation electrode part of the other thin film piezoelectric element are on a plane between a predetermined distance. It is the structure arrange | positioned adjacent to.
[0023]
With this configuration, the terminal electrode portion for connecting to the control circuit for driving the thin film piezoelectric element can be provided in the extending portion, which can be efficiently performed when mounting with a wire lead or the like. In addition, since the external dimensions of the pair of thin film piezoelectric elements do not need to be changed because they are provided on the surface between the predetermined distances, the number of thin film piezoelectric elements that can be collectively manufactured on the substrate does not change, and the cost increases. There is no invitation.
[0024]
The thin film piezoelectric element of the present invention is the thin film piezoelectric element described above, wherein the extension portion of the separation electrode portion of the first main electrode film of one thin film piezoelectric element and the thin film piezoelectric element of the other thin film piezoelectric element. The extending portion of the first main electrode film is disposed opposite to the extending portion of the first main electrode film of one thin film piezoelectric element and the separation electrode portion of the first main electrode film of the other thin film piezoelectric element. Extending part of the first main electrode film of one thin film piezoelectric element, the extending part of the first main electrode film of the other thin film piezoelectric element, and A first connection wiring for electrically connecting the second main electrode film of the other thin film piezoelectric element, an extension part of the separation electrode part of the first main electrode film of the other thin film piezoelectric element, and one thin film piezoelectric element Or a second connection wiring for electrically connecting the extended portion of the first main electrode film of the body element and the second main electrode film of the one thin film piezoelectric element. It made.
[0025]
With this configuration, even when a thin film piezoelectric element having a laminated structure is used as a pair, only two terminal electrodes can be connected to a control circuit for driving them, so that the mounting operation is greatly simplified. The In addition, since the processing of the via hole and the separation electrode portion only requires the first main electrode film and the first piezoelectric thin film, the manufacturing process can be greatly simplified.
[0026]
The thin film piezoelectric element of the present invention includes a first piezoelectric thin film sandwiched between a first main electrode film and a first counter electrode film, and a second piezoelectric film sandwiched between a second main electrode film and a second counter electrode film. The second piezoelectric thin film having the same shape as the one piezoelectric thin film has a configuration in which the first counter electrode film and the second counter electrode film are opposed to each other and bonded by a conductive adhesive layer. The second main electrode film has an extending portion that protrudes more than the first piezoelectric thin film, and a part of the second main electrode film is separated into an island shape to separate the second main electrode film. The electrode portion has a configuration in which the separation electrode portion of the second main electrode film, the first counter electrode film, and the second counter electrode film are electrically connected via a via hole provided in the second piezoelectric thin film.
[0027]
With this configuration, the via hole processing and the processing of the separation electrode portion need only be the first main electrode film and the second piezoelectric thin film, and the manufacturing process can be greatly simplified. In addition, because of the laminated structure, the force when the thin film piezoelectric element is displaced can be increased, and even when the thin film piezoelectric element is completely separated from the substrate, no warpage occurs, and reliability when used as an actuator is improved. It can also be greatly improved.
[0028]
The thin film piezoelectric element of the present invention has a configuration in which a pair of the thin film piezoelectric elements described above are arranged on the same surface with a predetermined distance apart, and a region portion that generates a piezoelectric function of the pair of thin film piezoelectric elements. Is mirror-symmetric about the center line of the predetermined distance, and of the pair of thin film piezoelectric elements, the first main electrode film extension part of one thin film piezoelectric element and the first thin film piezoelectric element first The extending portion of the main electrode film is arranged close to the surface between a predetermined distance.
[0029]
With this configuration, wiring connection between the thin film piezoelectric elements is facilitated. In addition, since the external dimensions of the pair of thin film piezoelectric elements do not need to be changed because they are provided on the surface between the predetermined distances, the number of thin film piezoelectric elements that can be collectively manufactured on the substrate does not change, and the cost increases. There is no invitation.
[0030]
The thin film piezoelectric element of the present invention is the thin film piezoelectric element described above, wherein the extension portion of the first main electrode film and the second main electrode film of one thin film piezoelectric element, and the other thin film piezoelectric element. A first connection wiring that electrically connects the separation electrode portion of the second main electrode film of the body element, an extension portion of the first main electrode film of the other thin film piezoelectric element, the second main electrode film, and one And a second connection wiring for electrically connecting the separation electrode portion of the second main electrode film of the thin film piezoelectric element.
[0031]
With this configuration, even when a thin film piezoelectric element having a laminated structure is used as a pair, only two terminal electrodes can be connected to a control circuit for driving them, so that the mounting operation is greatly simplified. The
[0032]
The actuator of the present invention comprises the above-described thin film piezoelectric element, a substrate on which the thin film piezoelectric element is mounted, and a control circuit that causes the thin film piezoelectric element to perform an expansion / contraction operation in the opposite direction. With this configuration, fine movement with high accuracy can be performed in a direction orthogonal to the length direction of the thin film piezoelectric element.
[0033]
Further, the disk recording / reproducing apparatus of the present invention includes the actuator, the disk, a head that performs at least one of recording and reproduction on the disk, a flexure to which the head is fixed, a direction that supports the flexure and is parallel to the disk surface. And a first positioning means for positioning the head at a predetermined track position of the disk, and a second positioning means. The first positioning means is a driving means for rotating the arm. The positioning means includes the actuator fixed to the flexure.
[0034]
With this configuration, the head can be positioned at a predetermined track position on the disk with very high accuracy, so that high-density recording is possible.
[0035]
Furthermore, the method for manufacturing a thin film piezoelectric element according to the present invention includes a step of forming a main electrode film to be a first main electrode film and a third main electrode film on a substrate, and a part of a predetermined region of the main electrode film. A process of removing, a step of forming a piezoelectric thin film to be a first piezoelectric thin film and a third piezoelectric thin film on the main electrode film, and a via opening to the main electrode film in the piezoelectric thin film in a predetermined region After forming the hole, the step of forming a counter electrode film to be the first counter electrode film and the third counter electrode film, and processing the counter electrode film and the piezoelectric thin film into substantially the same predetermined shape, Forming a laminated structure of the body thin film and the first counter electrode film, and the third piezoelectric thin film and the third counter electrode film, and processing the main electrode film so as to be at least larger than the first piezoelectric thin film It has a shape and an extended portion that is partially extended and exposed in the vicinity of a predetermined region. A first main electrode film and a third main electrode film are formed, and in each predetermined region, each of the first counter electrode film and the third counter electrode film is connected to the main electrode film in the predetermined region via a via hole. A first main electrode film that is connected and has an extended portion in which a main electrode film in a predetermined region extends and is exposed, and is electrically separated from the first main electrode film and the third main electrode film, respectively; And forming a separation electrode part and a separation electrode part of the third main electrode film.
[0036]
By this method, via hole processing and outer shape processing of the piezoelectric thin film can be performed separately, so even if via hole processing requiring high accuracy is performed by dry etching, defects such as a short circuit between the counter electrode film and the main electrode film Generation can be suppressed and production can be performed with high yield.
[0037]
Furthermore, in the method for manufacturing the thin film piezoelectric element of the present invention, the first main electrode film extending portion and the third main electrode film separation electrode portion connected to the third counter electrode film are electrically connected to each other. A connection wiring and a second connection wiring for electrically connecting the extending portion of the third main electrode film and the extending portion of the separation electrode portion of the first main electrode film connected to the first counter electrode film are formed. And further comprising a step.
[0038]
With this method, only two electrode terminals for driving the pair of thin film piezoelectric elements can be provided, so that the mounting process can be greatly simplified.
[0039]
Furthermore, in the method for manufacturing a thin film piezoelectric element of the present invention, a main electrode film to be a first main electrode film and a third main electrode film is formed on a first substrate, and a part of a predetermined region of the main electrode film is formed. After the removal process is performed, the first piezoelectric thin film and the piezoelectric thin film that becomes the third piezoelectric thin film are formed, and a via hole that opens to the main electrode film is formed in the piezoelectric thin film in a predetermined region, and then the first facing A first substrate processing step of forming an electrode film and a counter electrode film to be a third counter electrode film; and forming a main electrode film to be a second main electrode film and a fourth main electrode film on the second substrate; A process of removing a part of a predetermined region of the electrode film, forming a piezoelectric thin film as a second piezoelectric thin film and a fourth piezoelectric thin film, and opening the via to the main electrode film in the piezoelectric thin film in the predetermined region A second substrate processing step of forming a counter electrode film to be a second counter electrode film and a fourth counter electrode film after forming the holes; A step of bonding the counter electrode films of the first substrate and the second substrate with an adhesive layer, a step of removing the second substrate to expose the main electrode film on the second substrate side, and a second substrate The main electrode film on the side, the counter electrode film, the piezoelectric thin film, the counter electrode film on the first substrate side and the piezoelectric thin film are processed into substantially the same predetermined shape, and the second main electrode film, the second piezoelectric thin film, A laminate comprising a second counter electrode film, an adhesive layer, a first counter electrode film and a first piezoelectric thin film, a fourth main electrode film, a fourth piezoelectric thin film, a fourth counter electrode film, an adhesive layer, a third counter A step of forming an electrode film and a laminate composed of a third piezoelectric thin film, and a part of the main electrode film is electrically separated from the second main electrode film and the fourth main electrode film in each predetermined region; Forming a separation electrode portion of the second main electrode film and a separation electrode portion of the fourth main electrode film; Each of the counter electrode films is connected to the separation electrode portion of the second main electrode film and the separation electrode portion of the fourth main electrode film via the via hole, and the main electrode film on the first substrate side is processed. Forming a first main electrode film and a third main electrode film having an extended portion that is at least larger than the first piezoelectric thin film and the third piezoelectric thin film and a part of which is exposed; In the region, a part of the main electrode film is electrically separated from the first main electrode film and the third main electrode film, respectively, and has an extended portion where a part thereof is exposed. And a separation electrode portion of the third main electrode film, and the first counter electrode film and the third counter electrode film are respectively connected to the separation electrode portion of the first main electrode film and the third main electrode film via via holes. And a step of connecting to the separation electrode portion.
[0040]
With this method, even when the thin film piezoelectric element laminated in two layers is configured as a pair, it is possible to reliably and reliably form the terminal electrode for connection with the control circuit of the counter electrode film. it can.
[0041]
Furthermore, in the method for manufacturing a thin film piezoelectric element of the present invention, the extended portion of the first main electrode film, the second main electrode film, the separation electrode portion of the third main electrode film connected to the third counter electrode film, and the fourth A first connection wiring for electrically connecting a separation electrode portion of the fourth main electrode film connected to the counter electrode film; an extension portion of the third main electrode film; a fourth main electrode film; and a first counter electrode film. From the method further comprising the step of forming a second connection wiring for electrically connecting the separation electrode portion of the first main electrode film to be connected and the separation electrode portion of the second main electrode film to be connected to the second counter electrode film. Become.
[0042]
According to this method, only two terminal electrodes can be provided for connection to a control circuit for a thin film piezoelectric element having a pair configuration and two layers stacked on each other, and the mounting operation can be greatly improved.
[0043]
Furthermore, in the method for manufacturing a thin film piezoelectric element according to the present invention, the first main electrode film and the main electrode film serving as the third main electrode film, and the first piezoelectric thin film and the third piezoelectric thin film are formed on the first substrate. A first substrate processing step of forming a piezoelectric thin film, and a counter electrode film to be a first counter electrode film and a second counter electrode film, and a second main electrode film and a fourth main electrode film on the second substrate; Forming the main electrode film, removing a part of the predetermined region of the main electrode film, forming the second piezoelectric thin film and the piezoelectric thin film to be the fourth piezoelectric thin film, and forming the piezoelectric thin film in the predetermined region A second substrate processing step of forming a counter electrode film to be a second counter electrode film and a fourth counter electrode film after forming a via hole that opens to the main electrode film, and a first substrate and a second substrate A process of bonding the counter electrode films to each other with a conductive adhesive layer, and removing the second substrate to expose the main electrode film on the second substrate side And processing the main electrode film on the second substrate side, the counter electrode film and the piezoelectric thin film, the counter electrode film on the first substrate side and the piezoelectric thin film into substantially the same predetermined shape, and the second main electrode A laminated body comprising a film, a second piezoelectric thin film, a second counter electrode film, an adhesive layer, a first counter electrode film and a first piezoelectric thin film, a fourth main electrode film, a fourth piezoelectric thin film, a fourth counter electrode Forming a film, an adhesive layer, a third counter electrode film, and a laminate composed of a third piezoelectric thin film, and processing the main electrode film on the first substrate side to form the first piezoelectric thin film and the third piezoelectric film. Forming a first main electrode film and a third main electrode film having an extended portion that is at least larger than the body thin film and a portion of which is exposed; and a predetermined region including a via hole, The second separation electrode part and the second main electrode film are electrically separated from the second main electrode film and the fourth main electrode film, respectively. It comprises a method and a step of forming a separation electrode portion.
[0044]
By this method, the processing of the via hole and the separation electrode portion is only required on the second substrate side, and the manufacturing process is greatly simplified.
[0045]
Furthermore, a method for manufacturing a thin film piezoelectric element according to the present invention is a method for manufacturing a thin film piezoelectric element as described above, wherein the extension part of the first main electrode film, the second main electrode film, and the fourth separation electrode part are provided. The method further includes a step of forming a first connection wiring that is electrically connected and a second connection wiring that is electrically connected to the extended portion of the third main electrode film, the fourth main electrode film, and the second separation electrode portion. It consists of a method.
[0046]
According to this method, only two terminal electrodes can be provided for connection to a control circuit for a thin film piezoelectric element having a pair configuration and two layers stacked on each other, and the mounting operation can be greatly improved.
[0047]
Furthermore, in the method for manufacturing a thin film piezoelectric element of the present invention, a main electrode film to be a first main electrode film and a third main electrode film is formed on a first substrate, and a part of a predetermined region of the main electrode film is formed. After forming a piezoelectric thin film to be a first piezoelectric thin film and a third piezoelectric thin film, and forming a via hole that opens to the main electrode film in the piezoelectric thin film in the predetermined region, A first substrate processing step of forming a counter electrode film to be a first counter electrode film and a third counter electrode film; a main electrode film to be a second main electrode film and a fourth main electrode film on a second substrate; A second substrate processing step in which a piezoelectric thin film and a piezoelectric thin film serving as a fourth piezoelectric thin film, and a second counter electrode film and a counter electrode film serving as a fourth counter electrode film are respectively stacked; A step of adhering the counter electrode films of the other substrate with a conductive adhesive layer, removing the second substrate, The step of exposing the main electrode film on the plate side, the main electrode film on the second substrate side, the counter electrode film and the piezoelectric thin film, and the counter electrode film and the piezoelectric thin film on the first substrate side in substantially the same predetermined shape A laminated body composed of the second main electrode film, the second piezoelectric thin film, the second counter electrode film, the adhesive layer, the first counter electrode film and the first piezoelectric thin film, and the fourth main electrode film, fourth Forming a piezoelectric thin film, a fourth counter electrode film, an adhesive layer, a third counter electrode film, and a laminate composed of the third piezoelectric thin film, and processing the main electrode film on the first substrate side, A step of forming a first main electrode film and a third main electrode film having an extended portion that is at least larger than the piezoelectric thin film and the third piezoelectric thin film and a part of which is exposed; and a predetermined region including a via hole , A part of the main electrode film was electrically separated from the first main electrode film and the third main electrode film, respectively. And forming a first separation electrode portion and a third separation electrode portion.
[0048]
By this method, the via hole and the separation electrode portion need only be processed on the first substrate side, and the manufacturing process is greatly simplified.
[0049]
Further, the thin film piezoelectric element manufacturing method of the present invention is any one of the above thin film piezoelectric element manufacturing methods, wherein after forming the counter electrode film, a resist film is formed on the entire surface of the counter electrode film, The method further includes a step of selectively removing the resist film around the protrusions scattered on the counter electrode film and then removing the counter electrode film around the protrusions by etching.
[0050]
By this method, it is possible to prevent deterioration of piezoelectric characteristics due to protrusions mainly generated when forming a piezoelectric thin film, and it is possible to realize a highly reliable thin film piezoelectric element.
[0051]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a thin film piezoelectric element according to an embodiment of the present invention will be described in detail with reference to the drawings.
[0052]
(First embodiment)
FIG. 1 is a plan view of an actuator composed of a pair of thin film piezoelectric elements according to the first embodiment of the present invention. This actuator is used in a magnetic disk recording / reproducing apparatus to finely position the head slider at a predetermined track position on the disk with high accuracy. The actuator shown in FIG. 1 includes two thin film piezoelectric elements 2A and 2B (hereinafter, the right thin film piezoelectric element is called right element 2A and the left thin film piezoelectric element is called left element 2B). The pair of right side element 2A and left side element 2B have a mirror image structure with respect to the AA ′ line except for the area of the connection wiring, and the flexure 140 is formed by an adhesive resin layer (not shown). It is fixed to the adhesive. After bonding and fixing, the connection electrode pads 130 and 132 provided on the right element 2A and the left element 2B and the piezoelectric electrode pads 10 and 12 provided on the flexure 140 are connected by, for example, wire leads 14 and 16, respectively. . Further, a piezoelectric electrode wiring 24 routed from the piezoelectric electrode pads 10 and 12 is connected to a control circuit (not shown), and these constitute an actuator.
[0053]
The flexure 140 has a slider holding portion 18 that extends from a region where the right element 2A and the left element 2B are bonded to fix a head slider (not shown). The slider holding portion 18 is provided with a head electrode pad 20 for connecting to a wiring portion of a head element (not shown) mounted on the head slider. From the head electrode pad 20, the head electrode wiring 22 is routed on the flexure 140 between the right element 2 </ b> A and the left element 2 </ b> B and is similar to the piezoelectric electrode wiring 24 routed from the piezoelectric electrode pads 10 and 12. It is routed to a connection pad (not shown) with an external device.
[0054]
The operation of the actuator having such a configuration will be described. If a reverse polarity voltage is applied to each of the right element 2A and the left element 2B from a control circuit (not shown), when the right element 2A expands as illustrated in FIG. 2, the left element 2B contracts. These two antiparallel displacements act on the slider holding portion 18, and the slider holding portion 18 receives the resultant force and finely moves in the direction of the YY 'line. By controlling such fine movement with high accuracy, the head element can be positioned with high accuracy at a predetermined track position on a disk (not shown). For example, if the thickness of each piezoelectric thin film of the right element 2A and the left element 2B is 2.5 μm and a voltage of 5 volts is applied between the main electrode film and the counter electrode film, the Y-Y ′ direction It is also possible to set the displacement of the magnetic head to ± 0.8 μm.
[0055]
FIG. 3 shows a perspective view of a main part of a disk recording / reproducing apparatus using this actuator. In this embodiment, a case of a magnetic disk recording / reproducing apparatus using a hard disk will be described. A magnetic disk 28 is fixed to the main shaft 26 and is rotated by a rotating means 30 at a predetermined rotational speed. As this rotating means, a spindle motor is generally used. A suspension 36 provided with a flexure (not shown) on the surface side of the magnetic disk 28 is fixed to an arm 38, and the arm 38 is rotatably supported by a bearing portion 40. The head slider 32 and the thin film piezoelectric element 34 including the right element 2A and the left element 2B are fixed to a flexure. The arm 38 is swung by the first positioning means 42 to position the head slider 32 at a predetermined track position on the magnetic disk 28. In the conventional magnetic disk recording / reproducing apparatus, only the first positioning means 42 is used, but in the present embodiment, the head slider 32 is finely moved by the thin film piezoelectric element 34 attached to the flexure as described above. Since this fine movement can be controlled by a voltage applied to the thin film piezoelectric element 34, it is possible to sufficiently follow a minute track position, and further high density recording / reproduction is possible. The magnetic disk recording / reproducing apparatus is entirely covered with a housing 44 and a lid (not shown).
[0056]
FIG. 4 shows a cross-sectional structure of the thin film piezoelectric element 34 composed of the right element 2A and the left element 2B. 4A shows a cross-sectional shape along line X1-X1 in FIG. 1, and FIG. 4B shows a cross-sectional shape along line X2-X2. The structure of the thin film piezoelectric element 34 will be described below with reference to FIGS. 4 and 1. In addition, the same code | symbol is attached | subjected about the same element as the element shown in FIG. The same applies to the drawings used for description below.
[0057]
The thin film piezoelectric element 34 of the present embodiment is composed of a right element 2A and a left element 2B, and is a region in which the direction of the slider holding portion 18 generates a piezoelectric function from the vicinity of the X1-X1 line shown in FIG. As can be seen from FIG. 1, it is formed in a mirror-symmetric shape with respect to the center line AA ′ line of a predetermined distance. In this portion, as can be seen from FIG. 4, the right element 2A includes the first piezoelectric thin film 52 sandwiched between the first main electrode film 50 and the first counter electrode film 56, the second main electrode film 62, and the second main electrode film 62. The second piezoelectric thin film 66 sandwiched between the two counter electrode films 68 is bonded and laminated with an adhesive layer 74, and the entire surface is covered with an insulating resin layer 90. In the present embodiment, a piezoelectric thin film seed layer 54 is provided on each surface of the first main electrode film 50 and the second main electrode film 62 in order to form a piezoelectric thin film with better characteristics. ing.
[0058]
The left element 2B is sandwiched between the third piezoelectric thin film 76 sandwiched between the third main electrode film 78 and the third counter electrode film 80, and between the fourth main electrode film 88 and the fourth counter electrode film 84. The fourth piezoelectric thin film 86 is bonded and laminated with an adhesive layer 82, and further, the entire surface is covered with an insulating resin layer 90. Similarly, the piezoelectric thin film seed layer 54 is provided on the surfaces of the third main electrode film 78 and the fourth main electrode film 88. Further, the thin film piezoelectric element 34, which will be described in detail in a manufacturing method described later, is simultaneously formed of the same material and has a mirror-symmetric shape with respect to the center line AA ′. The respective piezoelectric characteristics of the element 2B can be made substantially the same characteristics. In the present embodiment, in order to integrate the right element 2A and the left element 2B, a bridge 90a and a connection part 90b are provided in the vicinity of the slider holding part 18 and the electrode terminal part using the same material as the insulating resin layer 90. It has been.
[0059]
The right element 2A and the left element 2B are fixed to the flexure 140 with an adhesive layer 142.
[0060]
Next, the structure of the electrode terminals of the thin film piezoelectric element 34 will be described.
[0061]
In the cross-sectional portion along the X1-X1 line, the opening 88a of the fourth main electrode film 88, the opening 78b provided in the extending portion 78a of the third main electrode film 78, and the via hole 70 are opposed to the second. In the opening 72a of the second separation electrode portion 72 connected to the electrode film 68, and similarly to the extension portion 60a of the first separation electrode portion 60 connected to the first counter electrode film 56 via the via hole 58. The provided opening 60 b is connected by the first connection wiring 97.
[0062]
In the cross section along the line X2-X2, the first main electrode film 50 is extended through the opening 50b provided in the extending portion 50a, the second main electrode film 62 through the opening 62a, and the via hole 116. The fourth separation connected to the fourth counter electrode film 84 via the opening 106b provided in the extending part 106a of the third separation electrode part 106 connected to the third counter electrode film 80 and the via hole 110 similarly. The opening 112 a of the electrode portion 112 is connected by the second connection wiring 128.
[0063]
Furthermore, connection electrode pads 130 and 132 for connecting to the piezoelectric electrode pads 10 and 12 on the flexure 140 extend so that the first main electrode film 50 and the third main electrode film 78 are partially exposed. Is formed. With this configuration, the right side element 2A and the left side element 2B have a laminated configuration, but can have only two connection terminals to the control circuit.
[0064]
In the present embodiment, the connection electrode pads 130 and 132 are formed so that the first main electrode film 50 and the third main electrode film 78 are partially exposed, but the present invention is not limited thereto. It is not limited. For example, connection electrode pads may be provided on the second main electrode film 62 and the fourth main electrode film 88, or may be provided on the first connection wiring 97 and the second connection wiring 128.
[0065]
Next, a method for manufacturing the thin film piezoelectric element of the present embodiment will be described with reference to the process diagrams of FIGS. FIGS. 5A to 5D are plan views for explaining a process of forming a thin film and performing a predetermined pattern processing on each of the first substrate 150 and the second substrate 152. Further, FIGS. 6A to 6D are cross-sectional views along line X1-X1 shown in FIG. 5B corresponding to FIGS. 5A to 5D, respectively. . 5A to FIG. 5D and the left side of FIG. 6A to FIG. 6D are diagrams for explaining steps on the first substrate 150. FIG. FIGS. 5A to 5D are diagrams on the right side and FIGS. 6A to 6D are diagrams on the right side of the second substrate 152. is there.
[0066]
As shown in FIGS. 5A and 6A, the main electrode for forming the first main electrode film 50 and the third main electrode film 78 on the first substrate 150 and the second substrate 152 is formed. The main electrode film 620 for forming the film 500 and the second main electrode film 62 and the fourth main electrode film 88 is formed. Further, a piezoelectric thin film seed layer 54 is formed on the main electrode films 500 and 620. The piezoelectric thin film seed layer 54 is formed on the main electrode films 500 and 620 and is provided to improve the orientation of the piezoelectric thin film formed on the main electrode films 500 and 620, but is not necessarily required. That is, a piezoelectric thin film may be formed directly on the main electrode films 500 and 620.
[0067]
As the first substrate 150 and the second substrate 152, for example, a magnesium oxide (MgO) single crystal substrate, a silicon (Si) single crystal substrate, strontium titanate (SrTiO) 3 ) A single crystal substrate or a sapphire substrate can be used. Further, as the main electrode films 500 and 620, platinum (Pt) thin films are suitable, but gold (Au), iridium (Ir), rhodium (Rh), ruthenium (Ru), silver (Ag), rhenium ( Any one of Re) and palladium (Pd), or an oxide thereof may be used. Further, as the piezoelectric thin film seed layer 54, a lead zirconate titanate (PZT) thin film, a lead lanthanum titanate (PLT) thin film, or the like may be formed on the order of several tens of nm.
[0068]
Next, a part of predetermined regions of the piezoelectric thin film seed layer 54 and the main electrode films 500 and 620 are removed by photolithography and an etching process. This is shown in FIGS. 5B and 6B. In this embodiment mode, as shown in FIG. 5, the first substrate 150 side is etched in an inverted S shape, and the second substrate 152 side is etched in an S shape.
[0069]
After such processing, as shown in FIG. 5C and FIG. 6C, on the first substrate 150, the piezoelectric body that becomes the first piezoelectric thin film 52 and the third piezoelectric thin film 76. On the thin film 520 and the second substrate 152, the second piezoelectric thin film 66 and the piezoelectric thin film 660 to be the fourth piezoelectric thin film 86 are formed. The piezoelectric thin films 520 and 660 include a lead zirconate titanate (PZT) thin film, a lead zirconate titanate (PLZT) thin film, or a barium titanate (BaTiO). 3 ) Piezoelectric thin films such as thin films can be used.
[0070]
Next, as shown in FIGS. 5D and 6D, the main electrode film is formed by etching the piezoelectric thin film 520 in a predetermined region portion etched in an inverted S shape on the first substrate 150. Via holes 58 and 116 reaching 500 are formed, and then a counter electrode film 560 to be a first counter electrode film 56 and a third counter electrode film 80 is formed. When the counter electrode film 560 is formed, the via holes 58 and 116 are also formed, and the counter electrode film 560 and the main electrode film 500 are electrically connected.
[0071]
Similarly, the piezoelectric thin film 660 is etched to form the via holes 70 and 110 reaching the main electrode film 620 on the second substrate 152 in a predetermined region portion etched in the S-shape, and then the second counter electrode. A counter electrode film 680 to be the film 68 and the fourth counter electrode film 84 is formed. When the counter electrode film 680 is formed, the via holes 70 and 110 are also formed, and the counter electrode film 680 and the main electrode film 620 are electrically connected.
[0072]
The piezoelectric thin films 520 and 660 can be etched by either dry etching or wet etching. As the counter electrode films 560 and 680, a single metal layer film or an alloy film can be used as long as it has good conductivity and can be selectively etched. Further, a multilayer film structure in which a material such as gold (Au), silver (Ag), or copper (Cu) is stacked on these materials may be used.
[0073]
Through the above process, film formation and pattern processing on the first substrate 150 and the second substrate 152 are completed. 7 and 8 are diagrams for explaining a process of bonding these two substrates together and processing them. FIGS. 7 (A) to 7 (D) are plan views, FIG. FIGS. 8A to 8D are cross-sectional views along line X1-X1 shown in FIG. 7B corresponding to FIGS. 7A to 7D, respectively. FIG. 7A and FIG. 8A show a state where these two substrates are aligned and bonded by an adhesive layer 740.
[0074]
Next, only the second substrate 152 is selectively removed from the state sandwiched between the first substrate 150 and the second substrate 152. This removal method can be performed by etching, polishing, etching after polishing to a predetermined thickness, or the like. When the first substrate 150 and the second substrate 152 are made of the same material, the first substrate 150 and the second substrate 152 are applied so as to cover the entire surface of the first substrate 150 with a resin that is not attacked by a chemical solution for etching and removing the substrates. What is necessary is just to etch. When the second substrate 152 is removed, as shown in FIGS. 7B and 8B, the piezoelectric thin film sandwiched between the main electrode film 500 and the counter electrode film 560 on the first substrate 150. The structure where 520 and the piezoelectric thin film 660 sandwiched between the main electrode film 620 and the counter electrode film 680 are bonded by the adhesive layer 740 is exposed. Each of the piezoelectric thin film seed layers 54 is also formed, but since this film is processed integrally with the piezoelectric thin films 520 and 660, it is assumed that the same processing as these films is performed unless otherwise specified.
[0075]
After this structure, etching for forming the right element 2A and the left element 2B is performed. FIGS. 7C and 8C show a state in which etching is performed leaving only the main electrode film 500 over the first substrate 150. By this etching, the main electrode film 620, the piezoelectric thin film 660, and the counter electrode film 680 formed on the second substrate 152, and the counter electrode film 560 and the piezoelectric thin film 520 formed on the first substrate 150, Are etched to form a shape constituting the right element 2A and the left element 2B.
[0076]
That is, in the region to be the right element 2A, the first piezoelectric thin film 52, the first counter electrode film 56, the adhesive layer 74, the second counter electrode film 68, the second piezoelectric thin film 66, the second main electrode film 62, Are processed into almost the same shape. Simultaneously with this processing, the predetermined region portion of the second main electrode film 62 is separated from the second main electrode film 62, and the second separation electrode portion 72 is formed. The second separation electrode portion 72 is electrically connected to the second counter electrode film 68 through the via hole 70. On the other hand, in the region portion to be the left element 2B, the third piezoelectric thin film 76, the third counter electrode film 80, the adhesive layer 82, the fourth counter electrode film 84, the fourth piezoelectric thin film 86, the fourth main electrode film 88, Are processed into almost the same shape. Simultaneously with this processing, a predetermined region of the fourth main electrode film 88 is separated from the fourth main electrode film 88, and a fourth separation electrode portion 112 is formed. The fourth separation electrode portion 112 is electrically connected to the fourth counter electrode film 84 through the via hole 110.
[0077]
Further, after this processing, as shown in FIGS. 7D and 8D, the main electrode film 500 on the first substrate 150 is etched. In this pattern processing, as shown in FIGS. 7 and 8, the pattern is formed to be slightly wider than the structure formed on the main electrode film 500.
[0078]
At this time, in the region portion to be the right element 2A, the predetermined region portion of the first main electrode film 50 is separated from the first main electrode film 50, and the first separation electrode portion 60 is formed. The electrode part 60 is processed so as to have an exposed extended part 60a. In addition, a part of the first main electrode film 50 is also etched in a predetermined region portion to form an exposed extended portion 50a.
[0079]
Further, in the region portion to be the left element 2B, the predetermined region portion of the third main electrode film 78 is separated from the third main electrode film 78, and the third separation electrode portion 106 is formed. The part 106 is processed so as to have an exposed extended part 106a. In addition, a part of the third main electrode film 78 is also etched in a predetermined region portion to form an exposed extended portion 78a.
[0080]
Next, with reference to FIG. 9 and FIG. 10, a process of forming a pair of thin film piezoelectric elements 34 will be described. 9 is a plan view of the main process, FIGS. 10A and 10B are cross-sectional views taken along the line X1-X1 corresponding to the respective processes in FIG. 9, and FIG. It is sectional drawing along a X2-X2 line.
[0081]
As shown in FIGS. 9A and 10A, after the insulating resin layer 90 is formed so as to cover the surface of the structure manufactured as described above, it is formed into a predetermined shape by etching. At this time, the opening 50b of the first main electrode film 50, the opening 62a of the second main electrode film 62, the opening 106b of the third separation electrode 106, the opening 112a of the fourth separation electrode 112, the third An opening 78b of the main electrode film 78, an opening 88a of the fourth main electrode film 88, an opening 60b of the first separation electrode part 60, and an opening 72a of the second separation electrode part 72 are formed by etching. At the same time, a bridge 90a and a connecting portion 90b for integrating the right element 2A and the left element 2B are also formed. The openings 130a and 132a for connecting the pair of thin film piezoelectric elements 34 to the piezoelectric electrode pads 10 and 12 of the flexure 140 are similarly processed.
[0082]
For the insulating resin layer 90, for example, a liquid polyimide resin solution is applied with a spinner and dried at 120 ° C., and then heated at 250 ° C. to form a polyimide. In addition to this, other organic polymer materials may be applied and thermally cured or photocured. However, as can be seen from FIGS. 9 and 10, the insulating resin layer 90 is in contact with both the first main electrode film and the first counter electrode film, so that not only sufficient electrical insulation is required. The material is required to be a material that can be etched into a predetermined shape.
[0083]
Next, a connection wiring and an external connection pad forming process will be described with reference to FIGS. 9B, 10B, and 10C. 10B is a cross-sectional view taken along line X1-X1, and FIG. 10C is a cross-sectional view taken along line X2-X2.
[0084]
As shown in FIG. 10B, in the cross-sectional portion along the X1-X1 line, the opening 78b of the third main electrode film 78, the opening 88a of the fourth main electrode film 88, and the opening of the first separation electrode part 60. A first connection wiring 97 that connects the portion 60b and the opening 72a of the second separation electrode portion 72 is formed. Further, as shown in FIG. 10C, in the cross-sectional portion along the X2-X2 line, the opening 50b of the first main electrode film 50, the opening 62a of the second main electrode film 62, and the third separation electrode part 106. The second connection wiring 128 is formed to connect the opening 106b and the opening 112a of the fourth separation electrode 112. Further, the connection electrode pads 130 and 132 are formed of the same wiring electrode material in the openings 130a and 132a.
[0085]
The thin film piezoelectric element 34 composed of the right side element 2A and the left side element 2B thus formed is completed on the first substrate 150. Thereafter, the entire thin film piezoelectric element 34 is protected with a resin such as wax (not shown), and then the first substrate 150 is removed by etching, and further adhered to the surface of the thin film piezoelectric element 34. If the resin such as wax is dissolved and removed, the thin film piezoelectric element 34 in a form completely separated from the substrate can be obtained.
[0086]
In the present embodiment, only one thin film piezoelectric element 34 is manufactured on the first substrate 150 and the second substrate 152, but actually, a plurality of thin film piezoelectric elements are formed on these substrates. Forming the body element is performed in order to improve mass productivity.
[0087]
In the present embodiment, the extension part 78a of the third main electrode film 78 and the extension part 60a of the first separation electrode part 60 and the extension part 50a of the first main electrode film 50 and the third separation electrode part are provided. 106 are separated from the extended portion 106 a, but these are processed from the same main electrode film, and finally connected by the first connection wiring 97 and the second connection wiring 128. , It may be connected without being separated. In this embodiment, a pair of thin film piezoelectric elements has been described. However, only one thin film piezoelectric element may be used.
[0088]
(Second Embodiment)
The thin film piezoelectric element according to the second embodiment of the present invention is characterized in that a conductive adhesive is used to bond the counter electrode films to the thin film piezoelectric element according to the first embodiment. . Hereinafter, the structure and manufacturing process different from those of the first embodiment will be mainly described with reference to FIGS.
[0089]
FIG. 11 shows a state in which a pair of thin film piezoelectric elements 340 are formed on the first substrate 150 as in the first embodiment.
[0090]
In the present embodiment, for the right element 20 </ b> A, a second separation electrode portion 72 is formed in a predetermined region portion of the second main electrode film 62, and the second separation electrode portion 72 is secondly opposed via the via hole 70. The electrode film 68 is electrically connected. This configuration is the same as that of the first embodiment. On the other hand, since the first counter electrode film 56 is electrically connected to the second counter electrode film 68 through the conductive adhesive layer 204, a via hole and a separation electrode portion are provided on the first piezoelectric thin film 52 side. Is not formed. On the other hand, for the left element 20B, a fourth separation electrode portion 112 is formed in a predetermined region of the fourth main electrode film 88, and the fourth separation electrode portion 112 is connected to the fourth counter electrode film 84 via the via hole 110. Electrically connected. This is also the same as in the first embodiment. However, since the third counter electrode film 80 is electrically connected to the fourth counter electrode film 84 via the conductive adhesive layer 224, the via hole and the separation electrode portion are not formed on the third piezoelectric thin film 76 side. Not formed.
[0091]
Further, in the cross-sectional portion along the line X1-X1 shown in FIG. 12A, the opening 78b of the third main electrode film 78, the opening 88a of the fourth main electrode film 88, and the second separation electrode part 72 A first connection wiring 97 that connects the opening 72a is provided. 12B, the opening 50b of the first main electrode film 50, the opening 62a of the second main electrode film 62, and the fourth separation electrode 112 are taken along the line X2-X2. A second connection wiring 128 that connects the opening 112a is provided. Further, the connection electrode pads 130 and 132 are formed of the same wiring electrode material in the openings 130a and 132a.
[0092]
As described above, the thin film piezoelectric element 340 of the present embodiment is manufactured on the first substrate 150. If the thin film piezoelectric element 340 thus fabricated is removed from the first substrate 150 and bonded and fixed to the flexure 140, it has the same functions and characteristics as the thin film piezoelectric element 34 of the first embodiment. An actuator can be realized.
[0093]
Next, a manufacturing method of the thin film piezoelectric element 340 of the present embodiment will be described mainly with respect to differences from the first embodiment.
[0094]
As shown in FIGS. 11 and 12, in the manufacturing method of the present embodiment, the film forming process on the second substrate and the process of processing into a predetermined shape are exactly the same as in the first embodiment. The description is omitted. On the other hand, on the first substrate 150, the main electrode film 500 that simply becomes the first main electrode film 50 and the third main electrode film 78, and the piezoelectric thin film that becomes the first piezoelectric thin film 52 and the third piezoelectric thin film 76. The counter electrode film 560 that becomes the first counter electrode film 56 and the third counter electrode film 80 only needs to be formed to a predetermined thickness.
[0095]
After the film formation and processing on the first substrate 150 and the second substrate are finished, the counter electrode films are bonded to each other with a conductive adhesive layer. By the adhesive layers 204 and 224, the counter electrode film on the first substrate 150 and the counter electrode film on the second substrate are electrically connected simultaneously with the mechanical adhesion. As the adhesive layers 204 and 224 for this purpose, adhesive bonding using a general conductive adhesive, bonding by bonding the opposing electrode film surfaces to each other, or a gold (Au) film, for example, on one surface of the opposing electrode film surface , A tin (Sn) film is formed on the other surface, and these are heated by pressure and bonded by alloying.
[0096]
After such adhesive bonding, the second substrate is removed as in the first embodiment, and the exposed structure is processed into a predetermined shape. These steps are the same as in the first embodiment. Since it exists, description is abbreviate | omitted.
[0097]
Further, similarly to the first embodiment, after the insulating resin layer 90 is formed so as to cover the surface of the manufactured structure, it is formed into a predetermined shape by etching. At this time, the opening 50b of the first main electrode film 50, the opening 62a of the second main electrode film 62, the opening 112a of the fourth separation electrode part 112, the opening 78b of the third main electrode film 78, the fourth An opening 88 a of the main electrode film 88 and an opening 72 a of the second separation electrode part 72 are formed by etching the insulating resin layer 90. Furthermore, at the same time, a bridge 90a and a connecting portion 90b for integrating the right element 20A and the left element 20B are also formed. In addition, the openings 130a and 132a for connecting the pair of thin film piezoelectric elements 340 to the piezoelectric electrode pads 10 and 12 of the flexure 140 are similarly processed.
[0098]
In this way, the thin film piezoelectric element 340 composed of the right element 20A and the left element 20B is completed on the first substrate 150. Thereafter, the entire thin film piezoelectric element 340 is protected with a resin such as wax (not shown), and then the first substrate 150 is removed by etching, and further attached to the surface of the thin film piezoelectric element 340. If the resin such as wax is dissolved and removed, the thin film piezoelectric element 340 in a form completely separated from the substrate can be obtained.
[0099]
In this embodiment, the manufacturing method of forming the piezoelectric thin film directly on the main electrode film without using the piezoelectric thin film seed layer 54 used in the first embodiment is used. In this embodiment, the via hole is formed on the second substrate side and the separation electrode portion is formed. Conversely, the via hole is formed on the first substrate side and the separation electrode portion is formed. May be.
[0100]
In the present embodiment, the via hole formation and the separation electrode portion need only be processed for one of the two substrates, so that the process is simpler and the yield is higher than in the first embodiment. Improved. Further, although a pair configuration is used in the present embodiment, only one configuration may be used.
[0101]
(Third embodiment)
In the thin film piezoelectric element and the manufacturing method thereof according to the third embodiment of the present invention, the piezoelectric thin film sandwiched between the main electrode film and the counter electrode film has a single layer structure. This is different from the second embodiment. Hereinafter, steps different from those of the first embodiment will be described with reference to FIGS. 13 and 14.
[0102]
FIG. 13 is a plan view showing a state in which a pair of thin film piezoelectric elements 345 is manufactured on the first substrate 150. 14A is a cross-sectional view along the X1-X1 line, and FIG. 14B is a cross-sectional view along the X2-X2 line. As can be seen from FIGS. 13 and 14, the thin film piezoelectric element 345 of the present embodiment is composed of a right element 25A and a left element 25B. The right element 25A has a single-layer configuration composed of a first piezoelectric thin film 52 sandwiched between a first main electrode film 50 and a first counter electrode film 56, and the left element 25B has a third main electrode film 78 and a first This is a single layer film configuration comprising a third piezoelectric thin film 76 sandwiched between three counter electrode films 80.
[0103]
In the cross-sectional portion along the line X1-X1 shown in FIG. 14A, the first counter electrode film 56 of the right element 25A is connected to the first separation electrode portion 60 of the first main electrode film 50 through the via hole 58. It is connected. Further, the extending portion 60a of the first separation electrode portion 60 is connected to the extending portion 78a of the third main electrode film 78 of the left side element 25B. 14B, the third counter electrode film 80 of the left element 25B is connected to the third separation electrode portion of the third main electrode film 78 through the via hole 116. In the cross section along line X2-X2 shown in FIG. 106 is connected. Further, the extending portion 106a of the third separation electrode portion 106 is connected to the extending portion 50a of the first main electrode film 50 of the right element 25A. These can be easily processed by changing the photomask so that these regions are connected when the pattern of the main electrode film is formed. As a result, the first connection wiring and the second connection wiring are formed in the first embodiment and the second embodiment, but these are unnecessary in this embodiment. Since these manufacturing methods are almost the same as the processing steps on the first substrate in the first embodiment, description of the manufacturing methods is omitted.
[0104]
Therefore, if the main electrode film is used as it is for the connection electrode pads 130 and 132, the manufacturing process can be simplified.
[0105]
In the present embodiment, the connection between the counter electrode film of the right side element and the main electrode film of the left side element and the connection of the main electrode film of the right side element and the counter electrode film of the left side element are performed via the via hole. Only two piezoelectric electrode pads can be provided. Also in this embodiment, not only a pair configuration but also a single configuration may be used.
[0106]
(Fourth embodiment)
When producing the thin film piezoelectric element of the present invention, the piezoelectric thin film is particularly formed to a thickness of about 2 μm to 5 μm, so that protrusion-like foreign matter is likely to occur during film formation, and this protrusion causes an insulation failure. As a result, the manufacturing yield is deteriorated. In the method for manufacturing a thin film piezoelectric element according to the fourth embodiment of the present invention, a method for preventing the deterioration of the manufacturing yield due to the protrusions generated when the piezoelectric thin film is formed will be described with reference to FIG.
[0107]
FIG. 15A is a plan view showing a state of processing to the same shape as the plan view shown in FIG. 5D in the manufacturing method of the first embodiment. That is, after the main electrode film 500, the piezoelectric thin film seed layer 54, and the piezoelectric thin film 520 are formed on the first substrate 150, the via hole 58 is processed, and then the counter electrode film 560 is formed. Show. FIG. 15B is a cross-sectional view thereof, and FIG. 15C is a cross-sectional view showing a state in which the counter electrode film 560 around the protrusion 240 is etched.
[0108]
As can be seen from FIGS. 15A and 15B, the protrusion 240 is formed on the surface of the counter electrode film 560. The protrusions 240 are likely to occur mainly when the piezoelectric thin film 520 is formed at high speed by sputtering, and may occur from several to several tens of pieces in one substrate. When the piezoelectric thin film 520 is formed at high speed by sputtering, if abnormal discharge occurs on the surface of the target because a large electric power is applied to the target as a film forming source, the sintered particles constituting the target are directly scattered. Thus, the protrusion 240 is formed on the substrate. When such a protrusion 240 is generated, continuous film formation is not performed in this region, so that the insulation between the main electrode film 500 and the counter electrode film 560 is lowered, or the piezoelectric characteristics are deteriorated with time. Is likely to occur.
[0109]
The manufacturing method according to the present embodiment is different from the first embodiment in that a process for preventing defects due to the protrusions 240 is performed after the counter electrode film 560 is formed. Specifically, after applying a photoresist film on the surface of the counter electrode film 560, only the peripheral photoresist film including the protrusion 240 is removed, and only the exposed counter electrode film 560 portion is etched. The cross-sectional state after this etching is shown in FIG. 15C, and the counter electrode film 560 is removed from the periphery of the protrusion 240. By this etching, even when a voltage is applied between the main electrode film 500 and the counter electrode film 560 sandwiching the piezoelectric thin film 520, an electric field is not applied in the vicinity of the protrusion 240. Accordingly, there is no occurrence of a decrease in insulation or deterioration of piezoelectric characteristics.
[0110]
In order to remove the photoresist film only on the peripheral portion of the protrusion 240, it is only necessary to expose only the peripheral portion, and it is performed by squeezing ultraviolet rays into a spot shape and irradiating only the peripheral portion of the protrusion 240. Can do.
[0111]
【The invention's effect】
The thin film piezoelectric element of the present invention comprises a main electrode film, a piezoelectric thin film formed on the main electrode film, and a counter electrode film formed on the piezoelectric thin film. The island-shaped main electrode film is separated from the main electrode film, and the separation electrode part is electrically connected to the counter electrode film via the via hole provided in the piezoelectric thin film. In addition, the separation electrode portion and the main electrode film have a configuration having an extending portion that protrudes more than the piezoelectric thin film.
[0112]
Furthermore, the thin film piezoelectric element of the present invention includes a first piezoelectric thin film sandwiched between the first main electrode film and the first counter electrode film, and a first sandwiched between the second main electrode film and the second counter electrode film. The second piezoelectric thin film having the same shape as the piezoelectric thin film has a configuration in which the first counter electrode film and the second counter electrode film are opposed to each other and bonded by an adhesive layer, and the first main electrode film and the second main electrode film are bonded to each other. Each of the electrode films constitutes an isolation electrode part that is partly separated into islands, and the first piezoelectric thin film and the second piezoelectric thin film are separated in the separation electrode part of the first main electrode film and the second main electrode film. The separation electrode portion of the first main electrode film and the first counter electrode film, and the separation electrode portion of the second main electrode film and the second counter electrode film are electrically connected to each other through via holes provided respectively in In addition, the separation electrode portion of the first main electrode film and the first main electrode film are extended in a shape protruding from the first piezoelectric thin film, respectively. Part consisting configuration with.
[0113]
In addition, a pair of these thin film piezoelectric elements are arranged on the same plane with a predetermined distance apart, and the region where the piezoelectric function of the pair of thin film piezoelectric elements occurs is mirror-symmetric about the center line of the predetermined distance. Yes, the extension part of the separation electrode part of one thin film piezoelectric element, the extension part of the main electrode film of the other thin film piezoelectric element, the extension part of the main electrode film of one thin film piezoelectric element, and the other thin film The extending portion of the separation electrode portion of the piezoelectric element is configured to be disposed close to the surface between the predetermined distances.
[0114]
With this configuration, a terminal electrode that connects the counter electrode film and the main electrode film to the control circuit can be provided in the extending portion. Since the extending portions can be arranged on the same surface and close to each other, wiring to the control circuit and mounting work can be easily performed. In addition, via hole processing and piezoelectric thin film outer shape processing can be performed separately, so that even if via hole processing requiring high precision is performed by dry etching, defects such as shorts between the counter electrode film and the main electrode film occur. Can be suppressed. Furthermore, the amount of displacement can be increased compared to the case where there is only one thin film piezoelectric element. Furthermore, if a voltage is applied so that each thin film piezoelectric element is displaced in the opposite direction, the magnetic head can be finely moved, for example, in a direction perpendicular to the length direction of the thin film piezoelectric element. Play.
[Brief description of the drawings]
FIG. 1 is a plan view of an actuator composed of a pair of thin film piezoelectric elements according to a first embodiment of the present invention.
FIG. 2 is a conceptual diagram for explaining the operation of the actuator according to the embodiment;
FIG. 3 is a perspective view of a main part of a magnetic disk recording / reproducing apparatus using the actuator according to the embodiment.
4A is a cross-sectional view of the thin film piezoelectric element of the same embodiment taken along line X1-X1 shown in FIG. 1. FIG. 4B is a cross sectional view of the thin film piezoelectric element of the same embodiment shown in FIG. Cross section along line
FIG. 5 is a plan view for explaining a process of forming a thin film and performing a predetermined pattern processing on each of the first substrate and the second substrate in the method of manufacturing the thin film piezoelectric element according to the embodiment;
6 is a cross-sectional view along the line X1-X1 shown in FIG. 5 of the process corresponding to each of FIG. 5 in the manufacturing method.
FIG. 7 is a plan view for explaining a process for bonding and processing two substrates together in the manufacturing method;
8 is a cross-sectional view taken along line X1-X1 shown in FIG. 7 in the process corresponding to each of FIG. 7 in the manufacturing method.
FIG. 9 is a plan view of main processes for forming a pair of thin film piezoelectric elements in the manufacturing method;
10 is a cross-sectional view taken along lines X1-X1 and X2-X2 shown in FIG. 9 corresponding to the respective steps shown in FIG. 9 in the manufacturing method.
FIG. 11 is a plan view showing a thin film piezoelectric element formed on the first substrate by the method of manufacturing a thin film piezoelectric element according to the second embodiment of the present invention.
12 is a cross-sectional view of the thin film piezoelectric element formed on the first substrate along the lines X1-X1 and X2-X2 shown in FIG. 11 by the manufacturing method of the embodiment.
FIG. 13 is a plan view showing a thin film piezoelectric element formed on the first substrate by the method for manufacturing a thin film piezoelectric element according to the third embodiment of the present invention.
14 is a cross-sectional view of the thin film piezoelectric element formed on the first substrate along the X1-X1 line and the X2-X2 line shown in FIG. 13 by the manufacturing method of the embodiment.
FIG. 15 is a view for explaining a step of etching away the counter electrode film around the protrusion generated on the surface of the counter electrode film by the method for manufacturing the thin film piezoelectric element according to the fourth embodiment of the present invention;
[Explanation of symbols]
2A, 20A, 25A Right side element
2B, 20B, 25B Left side element
10,12 Piezoelectric electrode pad
14,16 Wire lead
18 Slider holding part
20 Head electrode pad
22 Head electrode wiring
24 Piezoelectric electrode wiring
26 Spindle
28 Magnetic disk
30 Rotating means
32 Head slider
34,340,345 Thin film piezoelectric element
36 Suspension
38 arms
40 Bearing part
42 1st positioning means
44 housing
50 First Main Electrode Film
50a, 60a, 78a, 106a Extension part
50b, 60b, 62a, 72a, 78b, 88a, 106b, 112a, 130a, 132a Opening
52 First Piezoelectric Thin Film
54 Piezoelectric thin film seed layer
56 First counter electrode film
58, 70, 110, 116 Via hole
60 First separation electrode section
62 Second Main Electrode Film
66 Second Piezoelectric Thin Film
68 Second counter electrode film
72 Second separation electrode part
74, 82, 142, 204, 224, 740 Adhesive layer
76 Third Piezoelectric Thin Film
78 Third Main Electrode Film
80 Third counter electrode film
84 Fourth counter electrode film
86 Fourth Piezoelectric Thin Film
88 4th main electrode film
90 Insulating resin layer
90a bridge
90b connection
97 First connection wiring
106 Third separation electrode section
112 Fourth separation electrode part
128 Second connection wiring
130,132 Connection electrode pad
140 flexure
150 First substrate
152 Second substrate
240 Projection
500,620 Main electrode membrane
520,660 Piezoelectric thin film
560, 680 Counter electrode film

Claims (22)

主電極膜と、
前記主電極膜上に形成された圧電体薄膜と、
前記圧電体薄膜上に形成された対向電極膜とからなり、
前記主電極膜の一部が島状に前記主電極膜とは分離された分離電極部を構成し、前記分離電極部において、前記圧電体薄膜に設けられたヴィアホールを介して前記分離電極部と前記対向電極膜とが電気的に接続され、かつ前記分離電極部と前記主電極膜とは前記圧電体薄膜よりも突出する形状の延在部を有することを特徴とする薄膜圧電体素子。A main electrode membrane;
A piezoelectric thin film formed on the main electrode film;
A counter electrode film formed on the piezoelectric thin film,
A part of the main electrode film constitutes an isolation electrode part separated from the main electrode film in an island shape, and the isolation electrode part is connected to the isolation electrode part via a via hole provided in the piezoelectric thin film. And the counter electrode film are electrically connected to each other, and the separation electrode portion and the main electrode film have an extending portion protruding from the piezoelectric thin film. 請求項１に記載の薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成であって、
一対の前記薄膜圧電体素子の圧電機能を生じる領域部は、前記所定距離の中央線を中心として鏡面対称であり、
一対の前記薄膜圧電体素子のうち、一方の前記薄膜圧電体素子の前記分離電極部の延在部、他方の前記薄膜圧電体素子の前記主電極膜の延在部、一方の前記薄膜圧電体素子の前記主電極膜の延在部および他方の前記薄膜圧電体素子の前記分離電極部の延在部が前記所定距離の間の面上に近接して配置されたことを特徴とする薄膜圧電体素子。The thin film piezoelectric element according to claim 1 is configured as a pair arranged on the same plane with a predetermined distance therebetween,
The region portion that generates the piezoelectric function of the pair of thin film piezoelectric elements is mirror-symmetric about the center line of the predetermined distance,
Of the pair of thin film piezoelectric elements, the extension part of the separation electrode part of one thin film piezoelectric element, the extension part of the main electrode film of the other thin film piezoelectric element, and the one thin film piezoelectric body A thin film piezoelectric element characterized in that an extension part of the main electrode film of the element and an extension part of the separation electrode part of the other thin film piezoelectric element are arranged close to each other on the surface between the predetermined distances Body element. 請求項２に記載の薄膜圧電体素子であって、
一対の前記薄膜圧電体素子のうち、一方の前記薄膜圧電体素子の前記分離電極部の延在部と他方の前記薄膜圧電体素子の前記主電極膜の延在部とが対向して配置されるとともに電気的に接続され、一方の前記薄膜圧電体素子の前記主電極膜の延在部と他方の前記薄膜圧電体素子の前記分離電極部の延在部とが対向して配置されるとともに電気的に接続されたことを特徴とする薄膜圧電体素子。The thin film piezoelectric element according to claim 2,
Of the pair of thin film piezoelectric elements, the extending part of the separation electrode part of one thin film piezoelectric element and the extending part of the main electrode film of the other thin film piezoelectric element are arranged to face each other. And the extension part of the main electrode film of one of the thin film piezoelectric elements and the extension part of the separation electrode part of the other thin film piezoelectric element are arranged to face each other. A thin film piezoelectric element characterized by being electrically connected. 第１主電極膜と第１対向電極膜とで挟まれた第１圧電体薄膜と、第２主電極膜と第２対向電極膜とで挟まれ前記第１圧電体薄膜と同じ形状の第２圧電体薄膜とが、前記第１対向電極膜と前記第２対向電極膜とを対向させて接着層により接着された構成からなり、
前記第１主電極膜と前記第２主電極膜はそれぞれその一部が島状に分離された分離電極部を構成し、前記第１主電極膜と前記第２主電極膜のそれぞれの分離電極部において、前記第１圧電体薄膜と前記第２圧電体薄膜とにそれぞれ設けられたヴィアホールを介して前記第１主電極膜の分離電極部と前記第１対向電極膜、および前記第２主電極膜の分離電極部と前記第２対向電極膜とがそれぞれ電気的に接続され、かつ、前記第１主電極膜の分離電極部と前記第１主電極膜とはそれぞれ前記第１圧電体薄膜よりも突出する形状の延在部を有することを特徴とする薄膜圧電体素子。A first piezoelectric thin film sandwiched between the first main electrode film and the first counter electrode film, and a second film having the same shape as the first piezoelectric thin film sandwiched between the second main electrode film and the second counter electrode film. The piezoelectric thin film has a configuration in which the first counter electrode film and the second counter electrode film are opposed to each other and bonded by an adhesive layer,
Each of the first main electrode film and the second main electrode film constitutes an isolation electrode portion in which a part of the first main electrode film and the second main electrode film are separated in an island shape, and the respective separation electrodes of the first main electrode film and the second main electrode film Part of the first main electrode film, the first counter electrode film, and the second main electrode film via via holes respectively provided in the first piezoelectric thin film and the second piezoelectric thin film. The separation electrode portion of the electrode film and the second counter electrode film are electrically connected to each other, and the separation electrode portion of the first main electrode film and the first main electrode film are each the first piezoelectric thin film. A thin-film piezoelectric element having an extending part that protrudes further. 請求項４に記載の薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成であって、
一対の前記薄膜圧電体素子の圧電機能を生じる領域部は、前記所定距離の中央線を中心として鏡面対称であり、
一対の前記薄膜圧電体素子のうち、一方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部、他方の前記薄膜圧電体素子の前記第１主電極膜の延在部、一方の前記薄膜圧電体素子の前記第１主電極膜の延在部および他方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部が前記所定距離の間の面上に近接して配置されたことを特徴とする薄膜圧電体素子。A configuration in which a pair of thin film piezoelectric elements according to claim 4 are arranged on the same plane with a predetermined distance therebetween,
The region portion that generates the piezoelectric function of the pair of thin film piezoelectric elements is mirror-symmetric about the center line of the predetermined distance,
Of the pair of thin film piezoelectric elements, the extension part of the separation electrode part of the first main electrode film of one of the thin film piezoelectric elements, and the extension of the first main electrode film of the other thin film piezoelectric element The extending portion of the first main electrode film of one of the thin film piezoelectric elements and the extending portion of the separation electrode portion of the first main electrode film of the other thin film piezoelectric element are between the predetermined distances. A thin film piezoelectric element, characterized by being disposed close to a surface. 請求項５に記載の薄膜圧電体素子であって、
一対の前記薄膜圧電体素子のうち、一方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部と他方の前記薄膜圧電体素子の前記第１主電極膜の延在部とが対向して配置され、一方の前記薄膜圧電体素子の前記第１主電極膜の延在部と他方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部とが対向して配置され、
一方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部、一方の前記薄膜圧電体素子の前記第２主電極膜の分離電極部、他方の前記薄膜圧電体素子の前記第１主電極膜の延在部および他方の前記薄膜圧電体素子の前記第２主電極膜とを電気的に接続する第１接続配線と、
他方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部、他方の前記薄膜圧電体素子の前記第２主電極膜の分離電極部、一方の前記薄膜圧電体素子の前記第１主電極膜の延在部および一方の前記薄膜圧電体素子の前記第２主電極膜とを電気的に接続する第２接続配線とを有することを特徴とする薄膜圧電体素子。The thin film piezoelectric element according to claim 5,
Of the pair of thin film piezoelectric elements, the extension part of the separation electrode part of the first main electrode film of one of the thin film piezoelectric elements and the extension of the first main electrode film of the other thin film piezoelectric element The first main electrode film extension part of one of the thin film piezoelectric elements and the separation electrode part extension part of the first main electrode film of the other thin film piezoelectric element Are arranged opposite to each other,
The extending portion of the separation electrode portion of the first main electrode film of one of the thin film piezoelectric elements, the separation electrode portion of the second main electrode film of one of the thin film piezoelectric elements, and the other of the thin film piezoelectric element of the other thin film piezoelectric element A first connection wiring for electrically connecting the extended portion of the first main electrode film and the second main electrode film of the other thin film piezoelectric element;
The extension part of the separation electrode part of the first main electrode film of the other thin film piezoelectric element, the separation electrode part of the second main electrode film of the other thin film piezoelectric element, and the one of the thin film piezoelectric element A thin film piezoelectric element comprising: an extension portion of the first main electrode film; and a second connection wiring for electrically connecting the second main electrode film of one of the thin film piezoelectric elements. 第１主電極膜と第１対向電極膜とで挟まれた第１圧電体薄膜と、第２主電極膜と第２対向電極膜とで挟まれ前記第１圧電体薄膜と同じ形状の第２圧電体薄膜とが、前記第１対向電極膜と前記第２対向電極膜とを対向させて導電性の接着層により接着された構成からなり、
前記第１主電極膜はその一部が島状に分離された分離電極部を構成し、前記第１主電極膜の分離電極部において、前記第１圧電体薄膜に設けられたヴィアホールを介して前記第１主電極膜の分離電極部、前記第１対向電極膜および前記第２対向電極膜が電気的に接続され、かつ、前記第１主電極膜の分離電極部と前記第１主電極膜とは前記第１圧電体薄膜よりも突出する形状の延在部を有することを特徴とする薄膜圧電体素子。A first piezoelectric thin film sandwiched between the first main electrode film and the first counter electrode film, and a second film having the same shape as the first piezoelectric thin film sandwiched between the second main electrode film and the second counter electrode film. The piezoelectric thin film has a configuration in which the first counter electrode film and the second counter electrode film are opposed to each other and bonded by a conductive adhesive layer,
The first main electrode film constitutes an isolation electrode part in which a part of the first main electrode film is separated into islands, and the isolation electrode part of the first main electrode film passes through a via hole provided in the first piezoelectric thin film. The separation electrode portion of the first main electrode film, the first counter electrode film, and the second counter electrode film are electrically connected, and the separation electrode portion of the first main electrode film and the first main electrode A thin film piezoelectric element, wherein the film has an extending portion protruding from the first piezoelectric thin film. 請求項７に記載の薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成であって、
一対の前記薄膜圧電体素子の圧電機能を生じる領域部は、前記所定距離の中央線を中心として鏡面対称であり、
一対の前記薄膜圧電体素子のうち、一方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部、他方の前記薄膜圧電体素子の前記第１主電極膜の延在部、一方の前記薄膜圧電体素子の前記第１主電極膜の延在部および他方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部が前記所定距離の間の面上に近接して配置されたことを特徴とする薄膜圧電体素子。A configuration in which a pair of thin film piezoelectric elements according to claim 7 are arranged on the same plane with a predetermined distance therebetween,
The region portion that generates the piezoelectric function of the pair of thin film piezoelectric elements is mirror-symmetric about the center line of the predetermined distance,
Of the pair of thin film piezoelectric elements, the extension part of the separation electrode part of the first main electrode film of one of the thin film piezoelectric elements, and the extension of the first main electrode film of the other thin film piezoelectric element The extending portion of the first main electrode film of one of the thin film piezoelectric elements and the extending portion of the separation electrode portion of the first main electrode film of the other thin film piezoelectric element are between the predetermined distances. A thin film piezoelectric element, characterized by being disposed close to a surface. 請求項８に記載の薄膜圧電体素子であって、
一方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部と他方の前記薄膜圧電体素子の前記第１主電極膜の延在部とが対向して配置され、一方の前記薄膜圧電体素子の前記第１主電極膜の延在部と他方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部とが対向して配置され、
一方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部、他方の前記薄膜圧電体素子の前記第１主電極膜の延在部および他方の前記薄膜圧電体素子の前記第２主電極膜とを電気的に接続する第１接続配線と、
他方の前記薄膜圧電体素子の前記第１主電極膜の分離電極部の延在部、一方の前記薄膜圧電体素子の前記第１主電極膜の延在部および一方の前記薄膜圧電体素子の前記第２主電極膜とを電気的に接続する第２接続配線とを有することを特徴とする薄膜圧電体素子。The thin film piezoelectric element according to claim 8,
The extending portion of the separation electrode portion of the first main electrode film of one of the thin film piezoelectric elements is disposed opposite to the extending portion of the first main electrode film of the other thin film piezoelectric element, The extending portion of the first main electrode film of the thin film piezoelectric element and the extending portion of the separation electrode portion of the first main electrode film of the other thin film piezoelectric element are arranged to face each other.
An extension portion of the separation electrode portion of the first main electrode film of one of the thin film piezoelectric elements, an extension portion of the first main electrode film of the other thin film piezoelectric element, and an extension portion of the other thin film piezoelectric element. A first connection wiring for electrically connecting the second main electrode film;
The extension part of the separation electrode part of the first main electrode film of the other thin film piezoelectric element, the extension part of the first main electrode film of one thin film piezoelectric element, and the one part of the thin film piezoelectric element A thin film piezoelectric element comprising: a second connection wiring for electrically connecting the second main electrode film. 第１主電極膜と第１対向電極膜とで挟まれた第１圧電体薄膜と、第２主電極膜と第２対向電極膜とで挟まれ前記第１圧電体薄膜と同じ形状の第２圧電体薄膜とが、前記第１対向電極膜と前記第２対向電極膜とを対向させて導電性の接着層により接着された構成からなり、
前記第１主電極膜は前記第１圧電体薄膜よりも突出する形状の延在部を有し、前記第２主電極膜には、その一部が島状に分離された分離電極部が設けられ、前記第２主電極膜の分離電極部において、前記第２圧電体薄膜に設けられたヴィアホールを介して前記第２主電極膜の分離電極部、前記第１対向電極膜および前記第２対向電極膜が電気的に接続されたことを特徴とする薄膜圧電体素子。A first piezoelectric thin film sandwiched between the first main electrode film and the first counter electrode film, and a second film having the same shape as the first piezoelectric thin film sandwiched between the second main electrode film and the second counter electrode film. The piezoelectric thin film has a configuration in which the first counter electrode film and the second counter electrode film are opposed to each other and bonded by a conductive adhesive layer,
The first main electrode film has an extending portion that protrudes more than the first piezoelectric thin film, and the second main electrode film is provided with a separation electrode portion that is partly separated into an island shape. In the separation electrode portion of the second main electrode film, the separation electrode portion of the second main electrode film, the first counter electrode film, and the second through a via hole provided in the second piezoelectric thin film A thin film piezoelectric element, wherein the counter electrode film is electrically connected. 請求項１０に記載の薄膜圧電体素子を一対、所定距離離間して同一面上に配置した構成であって、
一対の前記薄膜圧電体素子の圧電機能を生じる領域部は、前記所定距離の中央線を中心として鏡面対称であり、
一対の前記薄膜圧電体素子のうち、一方の前記薄膜圧電体素子の前記第１主電極膜の延在部と他方の前記薄膜圧電体素子の前記第１主電極膜の延在部とが前記所定距離の間の面上に近接して配置されたことを特徴とする薄膜圧電体素子。A configuration in which a pair of thin film piezoelectric elements according to claim 10 are arranged on the same plane with a predetermined distance therebetween,
The region portion that generates the piezoelectric function of the pair of thin film piezoelectric elements is mirror-symmetric about the center line of the predetermined distance,
Of the pair of thin film piezoelectric elements, the extension part of the first main electrode film of one thin film piezoelectric element and the extension part of the first main electrode film of the other thin film piezoelectric element are the A thin film piezoelectric element, which is disposed close to a surface between a predetermined distance. 請求項１１に記載の薄膜圧電体素子であって、
一方の前記薄膜圧電体素子の前記第１主電極膜の延在部と前記第２主電極膜、および他方の前記薄膜圧電体素子の前記第２主電極膜の分離電極部とを電気的に接続する第１接続配線と、
他方の前記薄膜圧電体素子の前記第１主電極膜の延在部と前記第２主電極膜、および一方の前記薄膜圧電体素子の前記第２主電極膜の分離電極部とを電気的に接続する第２接続配線とを有することを特徴とする薄膜圧電体素子。The thin film piezoelectric element according to claim 11,
The extending portion of the first main electrode film and the second main electrode film of one of the thin film piezoelectric elements are electrically connected to the separation electrode portion of the second main electrode film of the other thin film piezoelectric element. A first connection wiring to be connected;
The extension portion of the first main electrode film of the other thin film piezoelectric element and the second main electrode film, and the separation electrode portion of the second main electrode film of the one thin film piezoelectric element are electrically connected A thin film piezoelectric element having a second connection wiring to be connected. 請求項４から請求項１２までのいずれかに記載の薄膜圧電体素子と、
前記薄膜圧電体素子を搭載する基板と、
前記薄膜圧電体素子にそれぞれ逆方向の伸縮動作を行わせる制御回路とを有することを特徴とするアクチュエータ。A thin film piezoelectric element according to any one of claims 4 to 12,
A substrate on which the thin film piezoelectric element is mounted;
An actuator comprising: a control circuit that causes the thin film piezoelectric elements to perform expansion and contraction operations in opposite directions. 請求項１３に記載のアクチュエータと、
ディスクと、
前記ディスクに記録と再生の少なくとも一方を行うヘッドと、
前記ヘッドが固定されたフレクシャーと、
前記フレクシャーを支持し、前記ディスク表面と平行な方向に回転自在のアームと、
前記ヘッドを前記ディスクの所定のトラック位置に位置決めするための第１位置決め手段と第２位置決め手段とを有し、
前記第１位置決め手段は前記アームを回転させる駆動手段であり、
前記第２位置決め手段は前記フレクシャーに固定された前記アクチュエータからなることを特徴とするディスク記録再生装置。An actuator according to claim 13;
A disc,
A head that performs at least one of recording and reproduction on the disk;
A flexure to which the head is fixed;
An arm that supports the flexure and is rotatable in a direction parallel to the disk surface;
First positioning means and second positioning means for positioning the head at a predetermined track position of the disk;
The first positioning means is a driving means for rotating the arm;
2. The disk recording / reproducing apparatus according to claim 1, wherein the second positioning means comprises the actuator fixed to the flexure. 基板上に第１主電極膜と第３主電極膜となる主電極膜を成膜する工程と、
前記主電極膜の所定領域の一部を除去する加工を行う工程と、
前記主電極膜上に第１圧電体薄膜と第３圧電体薄膜となる圧電体薄膜を成膜する工程と、
前記所定領域の前記圧電体薄膜に前記主電極膜まで開口するヴィアホールを形成した後に、第１対向電極膜と第３対向電極膜となる対向電極膜を成膜する工程と、
前記対向電極膜と前記圧電体薄膜とをほぼ同じ所定形状に加工して、前記第１圧電体薄膜と前記第１対向電極膜、および前記第３圧電体薄膜と前記第３対向電極膜とのそれぞれの積層構成を形成する工程と、
前記主電極膜を加工して、前記第１圧電体薄膜よりも少なくとも大きな形状で、かつ、前記所定領域の近傍においてその一部が延在されて露出した延在部を有する前記第１主電極膜と前記第３主電極膜とをそれぞれ形成するとともに、
それぞれの前記所定領域において、前記第１対向電極膜および前記第３対向電極膜のそれぞれが前記ヴィアホールを介して前記所定領域の前記主電極膜と接続され、かつ、前記所定領域の前記主電極膜が延在されて露出した延在部を有し、前記第１主電極膜および前記第３主電極膜とはそれぞれ電気的に分離した第１主電極膜の分離電極部と第３主電極膜の分離電極部とを形成する工程とを有することを特徴とする薄膜圧電体素子の製造方法。Forming a main electrode film to be a first main electrode film and a third main electrode film on a substrate;
Performing a process of removing a part of a predetermined region of the main electrode film;
Forming a first piezoelectric thin film and a third piezoelectric thin film on the main electrode film;
Forming a first counter electrode film and a counter electrode film serving as a third counter electrode film after forming a via hole that opens to the main electrode film in the piezoelectric thin film in the predetermined region;
The counter electrode film and the piezoelectric thin film are processed into substantially the same predetermined shape, and the first piezoelectric thin film and the first counter electrode film, and the third piezoelectric thin film and the third counter electrode film Forming each laminated structure; and
The first main electrode is formed by processing the main electrode film to have an extended portion that is at least larger than the first piezoelectric thin film and is partially extended and exposed in the vicinity of the predetermined region. Forming a film and the third main electrode film respectively;
In each of the predetermined regions, each of the first counter electrode film and the third counter electrode film is connected to the main electrode film in the predetermined region through the via hole, and the main electrode in the predetermined region A separation electrode portion and a third main electrode of the first main electrode film, each of which has an extended portion exposed by extending the film and is electrically separated from the first main electrode film and the third main electrode film, respectively. And a step of forming a separation electrode part of the film. 請求項１５に記載の薄膜圧電体素子の製造方法であって、
前記第１主電極膜の延在部と前記第３対向電極膜に接続する前記第３主電極膜の分離電極部とを電気的に接続する第１接続配線と、前記第３主電極膜の延在部と前記第１対向電極膜に接続する前記第１主電極膜の分離電極部の延在部とを電気的に接続する第２接続配線とを形成する工程とをさらに含むことを特徴とする薄膜圧電体素子の製造方法。It is a manufacturing method of the thin film piezoelectric element according to claim 15,
A first connection wiring for electrically connecting the extending portion of the first main electrode film and the separation electrode portion of the third main electrode film connected to the third counter electrode film; and Forming a second connection wiring for electrically connecting the extension portion and the extension portion of the separation electrode portion of the first main electrode film connected to the first counter electrode film. A method for manufacturing a thin film piezoelectric element. 第１の基板上に第１主電極膜と第３主電極膜となる主電極膜を形成し、前記主電極膜の所定領域の一部を除去する加工を行い、第１圧電体薄膜と第３圧電体薄膜となる圧電体薄膜を成膜し、前記所定領域の前記圧電体薄膜に前記主電極膜まで開口するヴィアホールを形成した後に、第１対向電極膜と第３対向電極膜となる対向電極膜を形成する第１基板加工工程と、
第２の基板上に第２主電極膜と第４主電極膜となる主電極膜を形成し、前記主電極膜の所定領域の一部を除去する加工を行い、第２圧電体薄膜と第４圧電体薄膜となる圧電体薄膜を成膜し、前記所定領域の前記圧電体薄膜に前記主電極膜まで開口するヴィアホールを形成した後に、第２対向電極膜と第４対向電極膜となる対向電極膜を形成する第２基板加工工程と、
前記第１の基板と前記第２の基板の対向電極膜同士を接着層により接着する工程と、
前記第２の基板を除去して、前記第２の基板側の前記主電極膜を露出させる工程と、
前記第２の基板側の前記主電極膜、前記対向電極膜、前記圧電体薄膜、前記第１の基板側の前記対向電極膜および前記圧電体薄膜をほぼ同一の所定形状に加工して、前記第２主電極膜、前記第２圧電体薄膜、前記第２対向電極膜、前記接着層、前記第１対向電極膜および前記第１圧電体薄膜からなる積層体と、前記第４主電極膜、前記第４圧電体薄膜、前記第４対向電極膜、前記接着層、前記第３対向電極膜および前記第３圧電体薄膜からなる積層体とを形成する工程と、
それぞれの前記所定領域において、前記主電極膜の一部が前記第２主電極膜および前記第４主電極膜とはそれぞれ電気的に分離した第２主電極膜の分離電極部と第４主電極膜の分離電極部を形成し、かつ前記第２対向電極膜および前記第４対向電極膜のそれぞれが前記ヴィアホールを介して前記第２主電極膜の分離電極部と前記第４主電極膜の分離電極部とに接続される工程と、
前記第１の基板側の前記主電極膜を加工し、前記第１圧電体薄膜および前記第３圧電体薄膜よりも少なくとも大きく、かつその一部が露出した延在部を有する前記第１主電極膜と前記第３主電極膜とを形成する工程と、
それぞれの前記所定領域において、前記主電極膜の一部が前記第１主電極膜および前記第３主電極膜とはそれぞれ電気的に分離し、かつその一部が露出した延在部を有する第１主電極膜の分離電極部と第３主電極膜の分離電極部とをそれぞれ形成し、前記第１対向電極膜および前記第３対向電極膜のそれぞれが前記ヴィアホールを介して前記第１主電極膜の分離電極部と前記第３主電極膜の分離電極部とに接続される工程とを有することを特徴とする薄膜圧電体素子の製造方法。A first main electrode film and a main electrode film to be a third main electrode film are formed on the first substrate, a process for removing a part of a predetermined region of the main electrode film is performed, and the first piezoelectric thin film and the first main electrode film After forming a piezoelectric thin film to be a three piezoelectric thin film and forming a via hole that opens to the main electrode film in the piezoelectric thin film in the predetermined region, the first counter electrode film and the third counter electrode film are formed. A first substrate processing step of forming a counter electrode film;
A main electrode film to be a second main electrode film and a fourth main electrode film is formed on the second substrate, and processing for removing a part of a predetermined region of the main electrode film is performed, and the second piezoelectric thin film and the first main electrode film are formed. After forming a piezoelectric thin film to be a four piezoelectric thin film and forming a via hole that opens to the main electrode film in the piezoelectric thin film in the predetermined region, the second counter electrode film and the fourth counter electrode film are formed. A second substrate processing step of forming a counter electrode film;
Bonding the counter electrode films of the first substrate and the second substrate with an adhesive layer;
Removing the second substrate to expose the main electrode film on the second substrate side;
Processing the main electrode film on the second substrate side, the counter electrode film, the piezoelectric thin film, the counter electrode film on the first substrate side and the piezoelectric thin film into substantially the same predetermined shape, A second main electrode film, the second piezoelectric thin film, the second counter electrode film, the adhesive layer, a laminate composed of the first counter electrode film and the first piezoelectric thin film, the fourth main electrode film, Forming a laminate comprising the fourth piezoelectric thin film, the fourth counter electrode film, the adhesive layer, the third counter electrode film, and the third piezoelectric thin film;
In each of the predetermined regions, a part of the main electrode film is electrically separated from the second main electrode film and the fourth main electrode film, respectively. A separation electrode portion of the film, and each of the second counter electrode film and the fourth counter electrode film is formed between the separation electrode portion of the second main electrode film and the fourth main electrode film via the via hole. A step of connecting to the separation electrode unit;
The first main electrode having an extended portion that is processed at the main electrode film on the first substrate side and is at least larger than the first piezoelectric thin film and the third piezoelectric thin film and a part thereof is exposed. Forming a film and the third main electrode film;
In each of the predetermined regions, a part of the main electrode film is electrically separated from the first main electrode film and the third main electrode film, respectively, and has an extension part in which a part thereof is exposed. A separation electrode portion of one main electrode film and a separation electrode portion of a third main electrode film are formed, respectively, and each of the first counter electrode film and the third counter electrode film is connected to the first main electrode film via the via hole. A method of manufacturing a thin film piezoelectric element, comprising: a step of connecting to a separation electrode portion of an electrode film and a separation electrode portion of the third main electrode film. 請求項１７に記載の薄膜圧電体素子の製造方法であって、
前記第１主電極膜の延在部、前記第２主電極膜、前記第３対向電極膜に接続する前記第３主電極膜の分離電極部および前記第４対向電極膜に接続する前記第４主電極膜の分離電極部とを電気的に接続する第１接続配線と、前記第３主電極膜の延在部、前記第４主電極膜、前記第１対向電極膜に接続する前記第１主電極膜の分離電極部および前記第２対向電極膜に接続する前記第２主電極膜の分離電極部とを電気的に接続する第２接続配線とを形成する工程をさらに有することを特徴とする薄膜圧電体素子の製造方法。A method of manufacturing a thin film piezoelectric element according to claim 17,
The extended portion of the first main electrode film, the second main electrode film, the separation electrode portion of the third main electrode film connected to the third counter electrode film, and the fourth electrode connected to the fourth counter electrode film The first connection wiring that electrically connects the separation electrode portion of the main electrode film, and the first connection wiring that is connected to the extended portion of the third main electrode film, the fourth main electrode film, and the first counter electrode film And a step of forming a second connection wiring for electrically connecting the separation electrode portion of the main electrode film and the separation electrode portion of the second main electrode film connected to the second counter electrode film. A method for manufacturing a thin film piezoelectric element. 第１の基板上に第１主電極膜と第３主電極膜となる主電極膜、第１圧電体薄膜と第３圧電体薄膜となる圧電体薄膜および第１対向電極膜と第３対向電極膜となる対向電極膜をそれぞれ積層形成する第１基板加工工程と、
第２の基板上に第２主電極膜と第４主電極膜となる主電極膜を形成し、前記主電極膜の所定領域の一部を除去する加工を行い、第２圧電体薄膜と第４圧電体薄膜となる圧電体薄膜を成膜し、前記所定領域の前記圧電体薄膜に前記主電極膜まで開口するヴィアホールを形成した後に、第２対向電極膜と第４対向電極膜となる対向電極膜を形成する第２基板加工工程と、
前記第１の基板と前記第２の基板の対向電極膜同士を導電性の接着層により接着する工程と、
前記第２の基板を除去して、前記第２の基板側の前記主電極膜を露出させる工程と、
前記第２の基板側の前記主電極膜、前記対向電極膜と前記圧電体薄膜、前記第１の基板側の前記対向電極膜および前記圧電体薄膜をほぼ同一の所定形状に加工して、前記第２主電極膜、前記第２圧電体薄膜、前記第２対向電極膜、前記接着層、前記第１対向電極膜および前記第１圧電体薄膜からなる積層体と、前記第４主電極膜、前記第４圧電体薄膜、前記第４対向電極膜、前記接着層、前記第３対向電極膜および前記第３圧電体薄膜からなる積層体とを形成する工程と、
前記第１の基板側の前記主電極膜を加工し、前記第１圧電体薄膜および前記第３圧電体薄膜よりも少なくとも大きく、かつその一部が露出した延在部を有する前記第１主電極膜と前記第３主電極膜とを形成する工程と
前記ヴィアホールを含む前記所定領域において、前記主電極膜の一部が前記第２主電極膜および前記第４主電極膜とはそれぞれ電気的に分離された第２分離電極部と第４分離電極部とをそれぞれ形成する工程とを有することを特徴とする薄膜圧電体素子の製造方法。A first main electrode film and a main electrode film to be a third main electrode film, a piezoelectric thin film to be a first piezoelectric thin film and a third piezoelectric thin film, and a first counter electrode film and a third counter electrode on a first substrate A first substrate processing step of laminating and forming counter electrode films to be films;
A main electrode film to be a second main electrode film and a fourth main electrode film is formed on the second substrate, and processing for removing a part of a predetermined region of the main electrode film is performed, and the second piezoelectric thin film and the first main electrode film are formed. After forming a piezoelectric thin film to be a four piezoelectric thin film and forming a via hole that opens to the main electrode film in the piezoelectric thin film in the predetermined region, the second counter electrode film and the fourth counter electrode film are formed. A second substrate processing step of forming a counter electrode film;
Bonding the counter electrode films of the first substrate and the second substrate with a conductive adhesive layer;
Removing the second substrate to expose the main electrode film on the second substrate side;
Processing the main electrode film on the second substrate side, the counter electrode film and the piezoelectric thin film, the counter electrode film on the first substrate side and the piezoelectric thin film into substantially the same predetermined shape, A second main electrode film, the second piezoelectric thin film, the second counter electrode film, the adhesive layer, a laminate composed of the first counter electrode film and the first piezoelectric thin film, the fourth main electrode film, Forming a laminate comprising the fourth piezoelectric thin film, the fourth counter electrode film, the adhesive layer, the third counter electrode film, and the third piezoelectric thin film;
The first main electrode having an extended portion that is processed at the main electrode film on the first substrate side and is at least larger than the first piezoelectric thin film and the third piezoelectric thin film and a part thereof is exposed. In the step of forming a film and the third main electrode film and in the predetermined region including the via hole, a part of the main electrode film is electrically connected to the second main electrode film and the fourth main electrode film, respectively. A method of manufacturing a thin film piezoelectric element, comprising: forming a second separation electrode portion and a fourth separation electrode portion separated into two. 請求項１９に記載の薄膜圧電体素子の製造方法であって、
前記第１主電極膜の延在部、前記第２主電極膜および前記第４分離電極部を電気的に接続する第１接続配線と、前記第３主電極膜の延在部、前記第４主電極膜および前記第２分離電極部を電気的に接続する第２接続配線とを形成する工程をさらに有することを特徴とする薄膜圧電体素子の製造方法。A method of manufacturing a thin film piezoelectric element according to claim 19,
An extension part of the first main electrode film, a first connection wiring electrically connecting the second main electrode film and the fourth separation electrode part, an extension part of the third main electrode film, the fourth A method of manufacturing a thin film piezoelectric element, further comprising a step of forming a main electrode film and a second connection wiring for electrically connecting the second separation electrode portion. 第１の基板上に第１主電極膜と第３主電極膜となる主電極膜を形成し、前記主電極膜の所定領域の一部を除去する加工を行い、第１圧電体薄膜と第３圧電体薄膜となる圧電体薄膜を成膜し、前記所定領域の前記圧電体薄膜に前記主電極膜まで開口するヴィアホールを形成した後に、第１対向電極膜と第３対向電極膜となる対向電極膜を形成する第１基板加工工程と、
第２の基板上に第２主電極膜と第４主電極膜となる主電極膜、第２圧電体薄膜と第４圧電体薄膜となる圧電体薄膜および第２対向電極膜と第４対向電極膜となる対向電極膜をそれぞれ積層形成する第２基板加工工程と
前記第１の基板と前記第２の基板の対向電極膜同士を導電性の接着層により接着する工程と、
前記第２の基板を除去して、前記第２の基板側の前記主電極膜を露出させる工程と、
前記第２の基板側の前記主電極膜、前記対向電極膜と前記圧電体薄膜、前記第１の基板側の前記対向電極膜および前記圧電体薄膜をほぼ同一の所定形状に加工して、前記第２主電極膜、前記第２圧電体薄膜、前記第２対向電極膜、前記接着層、前記第１対向電極膜および前記第１圧電体薄膜からなる積層体と、前記第４主電極膜、前記第４圧電体薄膜、前記第４対向電極膜、前記接着層、前記第３対向電極膜および前記第３圧電体薄膜からなる積層体とを形成する工程と、
前記第１の基板側の前記主電極膜を加工し、前記第１圧電体薄膜および前記第３圧電体薄膜よりも少なくとも大きく、かつその一部が露出した延在部を有する前記第１主電極膜と前記第３主電極膜とを形成する工程と
前記ヴィアホールを含む前記所定領域において、前記主電極膜の一部が前記第１主電極膜および前記第３主電極膜とはそれぞれ電気的に分離された第１分離電極部と第３分離電極部とをそれぞれ形成する工程とを有することを特徴とする薄膜圧電体素子の製造方法。A first main electrode film and a main electrode film to be a third main electrode film are formed on the first substrate, a process for removing a part of a predetermined region of the main electrode film is performed, and the first piezoelectric thin film and the first main electrode film After forming a piezoelectric thin film to be a three piezoelectric thin film and forming a via hole that opens to the main electrode film in the piezoelectric thin film in the predetermined region, the first counter electrode film and the third counter electrode film are formed. A first substrate processing step of forming a counter electrode film;
A second main electrode film and a main electrode film serving as a fourth main electrode film, a piezoelectric thin film serving as a second piezoelectric thin film and a fourth piezoelectric thin film, and a second counter electrode film and a fourth counter electrode on a second substrate A second substrate processing step of laminating and forming counter electrode films to be films, and a step of bonding the counter electrode films of the first substrate and the second substrate with a conductive adhesive layer;
Removing the second substrate to expose the main electrode film on the second substrate side;
Processing the main electrode film on the second substrate side, the counter electrode film and the piezoelectric thin film, the counter electrode film on the first substrate side and the piezoelectric thin film into substantially the same predetermined shape, A second main electrode film, the second piezoelectric thin film, the second counter electrode film, the adhesive layer, a laminate composed of the first counter electrode film and the first piezoelectric thin film, the fourth main electrode film, Forming a laminate comprising the fourth piezoelectric thin film, the fourth counter electrode film, the adhesive layer, the third counter electrode film, and the third piezoelectric thin film;
The first main electrode having an extended portion that is processed at the main electrode film on the first substrate side and is at least larger than the first piezoelectric thin film and the third piezoelectric thin film and a part thereof is exposed. Forming a film and the third main electrode film, and in the predetermined region including the via hole, a part of the main electrode film is electrically connected to the first main electrode film and the third main electrode film, respectively. A method for manufacturing a thin film piezoelectric element, comprising: forming a first separation electrode portion and a third separation electrode portion separated into two. 請求項１５から請求項２１までのいずれかに記載の薄膜圧電体素子の製造方法であって、
前記対向電極膜を形成した後に前記対向電極膜の全面にレジスト膜を形成し、前記対向電極膜上に散在する突起物周辺の前記レジスト膜を選択的に除去した後、
前記突起物周辺の前記対向電極膜をエッチング除去する工程をさらに含むことを特徴とする薄膜圧電体素子の製造方法。A method for manufacturing a thin film piezoelectric element according to any one of claims 15 to 21,
After forming the counter electrode film, forming a resist film on the entire surface of the counter electrode film, selectively removing the resist film around the protrusions scattered on the counter electrode film,
The method of manufacturing a thin film piezoelectric element, further comprising: etching away the counter electrode film around the protrusion.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007290420A (en) * 2006-04-21 2007-11-08 Yokohama Rubber Co Ltd:The Pneumatic tire
CN101751938A (en) * 2008-12-18 2010-06-23 日立环球储存科技荷兰有限公司 Head balance rack assembly and disc driver
JP2010218626A (en) * 2009-03-17 2010-09-30 Hitachi Global Storage Technologies Netherlands Bv Head gimbal assembly and disk drive
KR20110053821A (en) * 2009-11-16 2011-05-24 삼성전자주식회사 Electroactive Polymer Actuator and Manufacturing Method Thereof
KR101408740B1 (en) * 2007-05-14 2014-06-18 삼성전자주식회사 ELECTRO ACTIVE ACTUATOR AND MANUFACTURING METHOD
CN105883713A (en) * 2016-01-18 2016-08-24 上海芯赫科技有限公司 Capacitive composite sensor and manufacturing method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007290420A (en) * 2006-04-21 2007-11-08 Yokohama Rubber Co Ltd:The Pneumatic tire
KR101408740B1 (en) * 2007-05-14 2014-06-18 삼성전자주식회사 ELECTRO ACTIVE ACTUATOR AND MANUFACTURING METHOD
CN101751938A (en) * 2008-12-18 2010-06-23 日立环球储存科技荷兰有限公司 Head balance rack assembly and disc driver
JP2010218626A (en) * 2009-03-17 2010-09-30 Hitachi Global Storage Technologies Netherlands Bv Head gimbal assembly and disk drive
KR20110053821A (en) * 2009-11-16 2011-05-24 삼성전자주식회사 Electroactive Polymer Actuator and Manufacturing Method Thereof
KR101908113B1 (en) 2009-11-16 2018-10-15 삼성전자 주식회사 Electroactive polymer actuator and method for fabricating the same
CN105883713A (en) * 2016-01-18 2016-08-24 上海芯赫科技有限公司 Capacitive composite sensor and manufacturing method thereof

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