JP2005099311A - Electro-optical device substrate manufacturing method, electro-optical device substrate, electro-optical device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate for an electro-optical device in which static electricity generated when cutting the original substrate does not enter the wiring or the electric element even if a mark for determining whether or not the original substrate is cut is attached. To provide a substrate for an electro-optical device, an electro-optical device, and an electronic apparatus.
When forming Ta of a first metal layer of a TFD element for the purpose of determining whether or not an element substrate 20 of an electro-optical device is cut out from an original substrate 200, primary cutting scheduled lines L11, 2 are formed. A first linear mark 81 extending in parallel with the planned cutting line L1 in the vicinity of the planned cutting line L1 and an intersection 80 of the planned cutting line L12 and in the vicinity of the planned cutting line L12. A second linear mark 82 extending in parallel with the planned cutting line, a third linear mark 83 extending along the planned primary cutting line L11, and extended along the planned secondary cutting line L12 A fourth linear mark 84 is formed.
[Selection] Figure 9

Description

  The present invention relates to a method for manufacturing a substrate for an electro-optical device by cutting an original substrate on which wirings and electric elements are formed, an electro-optical device substrate, an electro-optical device using the electro-optical device substrate, and the electro-optical device The present invention relates to an electronic device using the. More specifically, the present invention relates to a technique for determining the suitability of a cutting process.

  In recent years, electro-optical devices such as liquid crystal devices have been widely used as display units of electronic devices such as mobile phones, portable computers, video cameras, and the like. Among such liquid crystal devices, in an active matrix type liquid crystal device using a TFD element as a pixel switching element, a TFD element as a non-linear element for pixel switching and a pixel electrode are formed on an insulating substrate for each pixel. Liquid crystal is filled between the element substrate (electro-optical device substrate) and the counter substrate on which the counter electrode is formed, and the electric field applied to the liquid crystal is controlled for each pixel to control the alignment of the liquid crystal. Then, predetermined image information is displayed.

In order to manufacture such a substrate, in general, various wirings and the like are formed in the state of a large original substrate, and then the original substrate is cut to obtain a substrate of a predetermined size. Here, in order to determine whether or not the original substrate is cut, it is common to place marks such as circles or arrows near the planned cutting line of the original substrate (see, for example, Patent Document 1).
JP 2000-231086 A

  In the case of a substrate used in an electro-optical device, a large image display area is secured, and an outer peripheral area called a frame area that does not directly contribute to display is narrowed. doing. Therefore, there is a problem that when the substrate used in the electro-optical device is cut out from the original substrate, static electricity enters the side on which the wiring and the electric element are formed, and the wiring and the electric element are easily damaged. However, since the mark disclosed in the above-mentioned patent document takes a relatively large area such as a circle or an arrow, when the mark is formed of a conductive film, it is connected to a wiring or an electric element via the mark when cut. There is a problem that static electricity easily enters.

  In view of the above problems, for an electro-optical device in which static electricity generated when cutting the original substrate does not enter the wiring or the electric element even if a mark for determining whether or not the original substrate is cut is attached. A substrate manufacturing method, an electro-optical device substrate, an electro-optical device using the electro-optical device substrate, and an electronic apparatus using the electro-optical device.

  In order to solve the above problems, in the present invention, a method for manufacturing a substrate for an electro-optical device, in which at least a wiring is formed on a surface of an insulating original substrate by a film forming process and a patterning process, and then the original substrate is cut. 2, where two directions orthogonal to each other on the original substrate are defined as an X direction and a Y direction, a first planned cutting line for the original substrate extending in the X direction and a second cutting for the original substrate extending in the Y direction A first linear mark extending in parallel with the first planned cutting line in the vicinity of the first planned cutting line, and the second planned cutting line at the intersection with the planned line, in the vicinity of the first planned cutting line. A second linear mark extending in parallel with the second scheduled cutting line, a third linear mark extending along the first scheduled cutting line, and the second scheduled cutting line Forming a fourth linear mark extending along Characterized in that it put.

  In the present invention, after cutting the original substrate along the first planned cutting line and the second planned cutting line to cut out the electro-optical device substrate, the first, second, third, and Whether or not the original substrate is cut is determined based on the remaining degree of the fourth linear mark.

  In the present invention, it is preferable that the first, second, third, and fourth linear marks are formed simultaneously with the conductive film constituting the wiring. If comprised in this way, it is not necessary to add a new process for the purpose of forming a mark.

  In the present invention, the first linear mark and the second linear mark are configured such that ends closer to the intersecting portion are connected to each other, and ends closer to the intersecting portion are separated from each other. The structure which is carrying out can be employ | adopted.

  In the present invention, in an electro-optical device substrate in which at least wiring is formed by a thin film pattern on the surface of the insulating substrate, the two directions orthogonal to each other on the insulating substrate are defined as the X direction and the Y direction. The first substrate edge extending in the X direction and the second substrate edge extending in the Y direction are formed on a surface of the first substrate edge in the vicinity of the first substrate edge by a conductive film. A first linear mark extending in parallel with the substrate edge and a second linear mark extending in parallel with the second substrate edge in the vicinity of the second substrate edge are formed. To do.

  In the present invention, it is preferable that each of the first, second, third, and fourth linear marks is made of the same material as the conductive film constituting the wiring.

  In the present invention, the first linear mark and the second linear mark are configured such that ends closer to the corner are connected to each other, and ends closer to the corner are separated from each other. Any of the configurations may be adopted.

  In the present invention, the electro-optical device substrate can be used in a liquid crystal device. In this case, the electro-optical device substrate holds the liquid crystal as the electro-optical material between the electro-optical device substrate and another substrate disposed opposite to the electro-optical device substrate.

  Here, the substrate for an electro-optical device can be used for an electroluminescence display device. In this case, the electro-optical device substrate holds an organic electroluminescent material constituting the electroluminescent element.

  The electro-optical device according to the present invention is used in an electronic apparatus such as a mobile phone or a mobile computer.

  In the present invention, since the mark formed at the intersection of the first planned cutting line and the second planned cutting line of the original substrate is linear, the wiring and the electric elements are formed on the electro-optical device substrate. It is in a form farthest away from the formed region. For this reason, even when the mark is formed of a conductive film, static electricity generated when the original substrate is cut does not enter the wiring or the electric element through the mark. Therefore, the yield and reliability of the electro-optical device substrate can be improved.

  Embodiments of the present invention will be described with reference to the drawings. In the following description of the embodiments, an element substrate used for an active matrix liquid crystal device using a TFD element as a pixel switching element among various electro-optical device substrates will be described.

[Overall configuration of electro-optical device]
FIG. 1 is a block diagram showing an electrical configuration of an electro-optical device (liquid crystal device) to which the present invention is applied. 2 and 3 are a perspective view and a cross-sectional view showing the configuration of the electro-optical device, respectively.

  As shown in FIG. 1, in the electro-optical device 100 of this embodiment, a plurality of scanning lines 51 are formed to extend in the row (X) direction, and a plurality of data lines 52 are arranged in the column (Y) direction. It is formed to extend. In the pixel portion 100a, pixels 53 are formed at positions corresponding to the intersections of the scanning lines 51 and the data lines 52, and these pixels 53 are arranged in a matrix. In each pixel 53, a liquid crystal layer 54 and a TFD (Thin Film Diode / Thin Film Diode) element 56, which is a two-terminal active element, are connected in series. In the example shown in FIG. The TFD elements 56 are connected to the data line 52 side. The liquid crystal layer 54 may be connected to the data line 52 side and the TFD element 56 may be connected to the scanning line 51 side. Each scanning line 51 is driven by a scanning line driving circuit 57, while each data line 52 is driven by a data line driving circuit 58.

  Such an electro-optical device 100 is configured, for example, as shown in FIG. Here, of the pair of substrates arranged opposite to each other, one substrate is the element substrate 20 (electro-optical device substrate) on which the TFD element and the pixel electrode are formed, and the other substrate is the counter substrate 30. It is.

  Among these substrates, on the inner surface of the element substrate 20, as shown in FIG. 3, a plurality of data lines 52, a plurality of TFD elements 56 connected to the data lines 52, and the TFD elements 56 and the pixel electrode 23 connected in a one-to-one relationship are formed. The data lines 52 are formed so as to extend in the direction perpendicular to the paper surface in FIG. 3, while the TFD elements 56 and the pixel electrodes 23 are arranged in a dot matrix. An alignment film 24 subjected to uniaxial alignment processing, for example, rubbing processing, is formed on the surface of the pixel electrode 23 and the like.

  On the other hand, a color filter 38 is formed on the inner surface of the counter substrate 30 and constitutes a colored layer of three colors “R”, “G”, and “B”. Note that a black matrix 39 is formed in the gap between the colored layers of these three colors to block incident light from the gap between the colored layers. An overcoat layer 37 is formed on the surfaces of the color filter 38 and the black matrix 39, and a counter electrode 31 functioning as a scanning line 51 is formed on the surface in a direction perpendicular to the data lines 52. The overcoat layer 37 is provided for the purpose of improving the smoothness of the color filter 38 and the black matrix 39 and preventing the counter electrode 31 from being disconnected. Further, an alignment film 34 that has been subjected to a rubbing process is formed on the surface of the counter electrode 31. The alignment films 24 and 34 are generally made of polyimide or the like.

  The element substrate 20 and the counter substrate 30 are bonded to each other with a predetermined gap by a sealing material 104 including a spacer (not shown), and the liquid crystal 105 is sealed in the gap. A polarizing plate 217 having an optical axis corresponding to the rubbing direction to the alignment film 24 is attached to the outer surface of the element substrate 20, and the rubbing direction to the alignment film 34 is applied to the outer surface of the counter substrate 30. A polarizing plate 317 having a corresponding optical axis is attached.

  As shown in FIG. 2, the electro-optical device 100 according to the present embodiment has a liquid crystal driving IC chip 250 mounted directly on the surface of the element substrate 20 by applying a COG (Chip On Glass) technique. As a result, each output terminal of the liquid crystal driving IC 250 is connected to each data line 52. Similarly, a liquid crystal driving IC chip 350 is directly mounted on the surface of the counter substrate 30, and each output terminal of the liquid crystal driving IC chip 350 is connected to each of the counter electrodes 31 serving as the scanning lines 51.

  The configuration is not limited to the COG technology, and the IC chip and the liquid crystal device may be connected using other technologies. For example, a TAB (Tape Automated Bonding) technique may be used to electrically connect a TCP (Tape Carrier Package) in which an IC chip is bonded on an FPC (Flexible Printed Circuit) to an electro-optical device. Further, COB (Chip On Board) technology for bonding an IC chip to a hard substrate may be used.

[Pixel configuration]
FIG. 4 is a plan view showing a layout for several pixels including the TFD element in the electro-optical device, and FIG. 5 is an explanatory diagram of the TFD element formed in each pixel.

  4 and 5, the TFD element 56 includes a first TFD element 56a and a second TFD element 56b. On the base layer 201 formed on the surface of the element substrate 20, the first metal film 222, The insulating layer 224 is formed of an oxide film formed on the surface of the first metal film 222 by anodic oxidation, and the second metal films 226a and 226b are formed on the surface and spaced apart from each other. Also, the second metal film 226 a becomes the data line 52 as it is, while the second metal film 226 b is connected to the pixel electrode 23. The data line 52 has a first metal layer 223 formed simultaneously with the first metal film 222.

The underlayer 201 is made of, for example, oxidation rental (Ta ₂ O ₅ ) having a thickness of about 50 to 200 nm. The first metal layer 222 is formed of, for example, a tantalum single film or a tantalum alloy film having a thickness of about 100 to 500 nm, and the insulating layer 224 is formed by oxidizing the surface of the first metal layer 222 by an anodic oxidation method. The tantalum oxide (Ta ₂ O ₅ ) having a thickness of 10 to 35 nm. The second metal layers 226a and 226b are formed with a thickness of about 50 to 300 nm by a metal film such as chromium (Cr), for example.

  Here, when viewed from the data line 52 side, the first TFD element 56a becomes, in order, the second metal film 226a / the insulating layer 224 / the first metal film 222, so that the metal (conductor) / insulator / Since the sandwich structure of metal (conductor) is adopted, the diode switching characteristics in both positive and negative directions are provided. On the other hand, when viewed from the data line 52 side, the second TFD element 56b is, in order, the first metal film 222 / insulating layer 224 / second metal film 226b, which is opposite to the first TFD element 56a. The diode switching characteristics are as follows. Therefore, since the TFD element 56 has two diodes connected in series in opposite directions, the current-voltage nonlinear characteristic is symmetric in both positive and negative directions compared to the case where one diode is used. Will be. If it is not necessary to strictly symmetrize the nonlinear characteristics as described above, only one TFD element may be used.

  The pixel electrode 23 is formed of a conductive transparent film such as ITO (Indium Tin Oxide) when used as a transmissive type, while having a reflectivity such as aluminum or silver when used as a reflective type. It is formed from a large reflective metal film. Note that the pixel electrode 23 may be formed of a transparent metal such as ITO even if it is a reflective type. In this case, after the reflective metal as the reflective layer is formed, the transparent pixel electrode 23 is formed through the insulating layer. On the other hand, when used as a transflective type, the reflective layer is formed to be extremely thin to form a transflective film, or a slit is provided. As the element substrate 20 itself, for example, an insulating substrate such as quartz or glass is used. When used as a transmission type, the element substrate 20 is also required to be transparent, but when used as a reflection type, it is not necessary to be transparent. In FIG. 5, the reason why the base layer 201 is provided on the surface of the element substrate 20 is that the first metal films 222 and 223 are not peeled off from the base by heat treatment, and impurities are added to the first metal films 222 and 223. This is to prevent diffusion. Therefore, if this does not cause a problem, the base layer 201 can be omitted.

[Method of manufacturing electro-optical device]
FIG. 6 is a process diagram illustrating an example of a method for manufacturing the electro-optical device 100 of the present embodiment. FIG. 7 is a perspective view schematically showing the original substrate used for manufacturing the element substrate constituting the electro-optical device. FIG. 8 is a process sectional view showing an element substrate forming process.

  In this embodiment, when the electro-optical device 100 is manufactured, an element substrate forming process including an active element forming process P1 to a sealing material printing process P5 and a color filter forming process P6 to a rubbing process P10 shown in FIG. It is performed separately from the substrate forming step. Further, these steps are performed in a state of a large original substrate in which a large number of element substrates 20 and counter substrates 30 can be obtained.

  In the element substrate forming process (active element forming process P1 to sealing material printing process P5), a large-area original substrate 200 as shown in FIG. 7 is prepared. The original substrate 200 is formed of a light-transmitting insulating substrate such as glass. Here, the original substrate 200 is a virtual primary cutting planned line L11 (first cutting planned line extending in the X direction) indicated by a one-dot chain line, and a virtual secondary cutting planned line L12 (shown by a two-dot chain line) ( A plurality of element substrates 20 are taken along the second planned cutting line extending in the Y direction, and the peripheral region 209 is discarded.

  In this embodiment, the active substrate forming process P1 is first performed on the original substrate 200, thereby forming the data lines 52 and the TFD elements 56 corresponding to a plurality of electro-optical devices. In FIG. 7, for convenience, eight element substrates 20 are formed from the original substrate 200, but more element substrates 20 are manufactured from the original substrate 200 in the actual process.

First, in the active element formation step P1, for example, in the base layer formation step (a) shown in FIG. 8, a tantalum oxide, for example, Ta ₂ O ₅ is formed on the surface of the original substrate 200 to a uniform thickness. Thus, the underlayer 201 is formed.

  Next, in the first metal layer forming step (b), for example, Ta is formed with a uniform thickness by sputtering or the like, and further, the first metal layer 223 of the data line 52 and the TFD are formed using photolithography technology. The first metal layer 222 of the element 56 is patterned at the same time. At this time, the first layer of the data line 52 and the first metal layer 222 are connected by a bridge portion (not shown). In this step, marks to be described later are also formed.

  Next, in the insulating layer forming step (c), anodic oxidation is performed in a state where a plurality of original substrates 200 are immersed in an electrolytic solution. At that time, power is supplied to the first metal layer 222 via the first metal layer 223 of the data line 52, and an anodic oxide film acting as the insulating layer 224 is formed on the surface thereof.

  Next, in the annealing step (d), the plurality of original substrates 200 are heated. As a result, the defect density such as dislocations and vacancies in the insulating layer 224 is reduced, so that the I / V value of the TFD element 56 can be increased.

  Next, in the second metal layer forming step (e), after Cr is formed with a uniform thickness by sputtering or the like, the uppermost layer of the data line 52, the first TFD element 56a is formed by using a photolithography technique. The second metal layer 226a and the second metal layer 226b of the second TFD element 56b are formed. As described above, the TFD elements 56 as active elements are formed on the surface of the original substrate 200 by the number of element substrates 20.

  Next, in the bridge portion removal and underlayer removal step (f), the bridge portion is removed from the original substrate 200 by dry etching, for example. Thereby, the first metal layer 222 and the insulating layer 224 of the first TFD element 56a and the second TFD element 56b are separated from the data line 52 in an island shape. In this step, in addition to the bridge portion, unnecessary portions that remain on each element substrate 20 when the original substrate 200 is cut along the planned cutting lines L11 and L12 are also removed from the power supply pattern described later. To do. Further, the base layer 201 is removed from the region corresponding to the pixel electrode 23 to expose the original substrate 200.

  Next, the pixel electrode formation process P2 of FIG. 6 is performed. Specifically, in the electrode formation step (g), ITO for forming the pixel electrode 23 is formed with a uniform thickness by sputtering or the like, and further, the size of one pixel is obtained by photolithography. The corresponding pixel electrode 23 having a predetermined shape is formed so as to partially overlap the second metal layer 226b. Through the series of steps, the TFD element 56 and the pixel electrode 23 shown in FIGS. 4 and 5 are formed.

  After that, in the alignment film process P3 of FIG. 6, after forming the alignment film 24 by forming polyimide, polyvinyl alcohol, etc. on the surface of the original substrate 200 in a uniform thickness, in the rubbing treatment process P4, the alignment film is aligned. The film 24 is subjected to a rubbing process or other alignment process.

  Next, in the sealing material printing process P5, as shown in FIG. 2, the sealing material 104 is annularly applied by a dispenser, screen printing, or the like. Note that a liquid crystal injection port (not shown) is formed in part of the sealing material 104.

  Separately from the above element substrate forming process, an opposing substrate forming process (color filter forming process P6 to rubbing process P10) is performed. For this purpose, first, a large substrate having a large area formed of a light-transmitting material such as a glass substrate is prepared in the same manner as the element substrate 20, and then the counter substrate 30 is formed on the surface of the original substrate in the color filter forming step P6. The black matrix 39 and the color filter 38 are formed for the number of sheets.

  Next, in the flattening layer forming step P7, the flattening layer 37 is formed on the color filter 38 with a uniform thickness to flatten the surface.

  Next, in the counter electrode forming step P8, the stripe-shaped counter electrode 31, that is, the scanning line 51 is formed using an ITO film or the like.

  Next, after an alignment film 34 having a uniform thickness is formed on the scanning lines 51 and the like with polyimide or the like in the alignment film formation process P9, a rubbing process or the like is performed on the alignment film 34 in the rubbing process P10. An orientation process is performed. Thus, the original substrate on the counter substrate side is completed.

  Thereafter, the element substrate forming original substrate 200 and the counter substrate forming original substrate are aligned, and then the original substrates are bonded to each other with the sealant 104 interposed therebetween (bonding step P11), and further UV-cured. The sealing material 104 is cured by other methods (sealing material curing step P12). As a result, an empty panel structure including a plurality of liquid crystal devices is formed. Thereafter, a cutting groove is formed along the first planned cutting line L11 described with reference to FIG. 7 for the empty panel structure, and the panel structure is formed into a strip-shaped panel structure based on the cutting groove. Cut into body (primary cutting step P13). In this strip-shaped panel structure, since the liquid crystal injection port consisting of a discontinuous portion of the sealing material 104 is opened to the outside at the cutting position with respect to the original substrate, liquid crystal is supplied from the exposed liquid crystal injection port to the inside of the panel structure. After injecting under reduced pressure (liquid crystal injection step P14), a sealing material such as resin is applied to each liquid crystal injection port to seal each liquid crystal injection port (injection port sealing step P15). In addition, since a liquid crystal adheres to a panel structure body by this process, the panel structure body which finished inject | pouring a liquid crystal receives a washing process (cleaning process P16). Thereafter, for the panel structure, a cutting groove is formed along the second planned cutting line L12 described with reference to FIG. 7, and then the original substrate is formed in the strip-shaped panel structure along the cutting groove. Are cut out to cut out a plurality of electro-optical devices 100 (secondary cutting step P17). Thereafter, the liquid crystal driving ICs 250 and 350 are mounted on the electro-optical device 100 to complete the electro-optical device 100 (mounting process P18).

[Detailed description of mark for checking cutting suitability]
In the present embodiment, when the electro-optical device 100 configured as described above is manufactured, the data line 52 is formed by Ta in the first metal layer forming step (b) in order to determine whether the original substrate 200 is cut or not. When the first metal layer 223 and the first metal layer 222 of the TFD element 56 are formed, the primary cutting planned line L11 for the original substrate 200 extending in the X direction and the secondary cutting scheduled for the original substrate 200 extending in the Y direction are performed. A first linear mark 81 extending in parallel with the planned cutting line L1 in the vicinity of the primary cutting planned line L1 and a cutting plan in the vicinity of the secondary cutting planned line L12 with respect to the intersection 80 with the line L12. A second linear mark 82 extending in parallel with the line, a third linear mark 83 extending along the primary cut line L11, and a fourth line extending along the secondary cut line L12. Forming a linear mark 84 of Ku. Here, the first linear mark 81 and the second linear mark 82 are connected at the ends closer to the intersection 80.

  In the first metal layer forming step (b), when the first metal layer 223 of the data line 52 and the first metal layer 222 of the TFD element 56 are formed by Ta, an element for forming the element substrate 20 is formed. An alignment mark 89 for bonding the substrate 200 and the original substrate for forming the counter substrate is also formed in the vicinity of the intersection 80.

  Then, after performing the primary cutting step P13 or the secondary cutting step P17, the linear marks 81 to 84 are used as break confirmation marks (chip corner marks), and the remaining state of the linear marks 81 to 84 is applied to the original substrate 200. Determine whether cutting is appropriate. For example, when the cutting is performed while being biased to one side, the third linear mark 83 and the fourth linear mark 84 remain on one element substrate 20. In some cases, the first linear mark 81 and the second linear mark 82 are missing on one element substrate 20. Therefore, after performing the primary cutting process P13 or the secondary cutting process P17, if the remaining state of the linear marks 81 to 84 is confirmed, it is possible to reliably determine whether or not the original substrate 200 is cut. Therefore, in the element substrate 20 that has been cut normally, the corner portion 88 formed by the first substrate edge 205 extending in the X direction and the second substrate edge 206 extending in the Y direction has at least the first portion. A first linear mark 81 extending in parallel with the first substrate edge 205 remains in the vicinity of the substrate edge 205, and a second line extending in parallel with the second substrate edge 206 in the vicinity of the second substrate edge 206. The shape mark 82 remains.

  Here, the linear marks 81 to 84 are linear, and occupy only a very small area in the vicinity of the primary cutting planned line L11 and the secondary cutting planned line L12. For this reason, not only the third and fourth linear marks 83 and 84 but also the first and second linear marks 81 and 82 are separated from the pixel portion 100a where the data line 52 and the TFD element 56 are formed. ing. Further, not only the third and fourth linear marks 83 and 84 but also the first and second linear marks 81 and 82 are separated from the alignment mark 89.

  For this reason, even when the other marks are used as they are and the linear marks 81 to 84 are made of the conductive film (Ta), the original substrate 200 is aligned along the primary cutting planned line L11 and the secondary cutting planned line L12. The static electricity generated at the time of cutting does not enter the pixel portion 100a via the linear marks 81-84. Therefore, without adding a new process for the purpose of forming the linear marks 81 to 84, the process of forming the conductive film constituting the data line 52 and the TFD element 56 is used as it is, and the linear mark 81 is used. Even when .about.84 are formed, the yield and reliability of the electro-optical device 100a (element substrate 20) can be improved.

[Other embodiments]
In the above embodiment, the first linear mark 81 and the second linear mark 82 are connected to the end portions closer to the intersecting portion 80, as shown in FIGS. 10A and 10B. As described above, the first linear mark 81 and the second linear mark 82 may adopt a configuration in which the ends close to the intersecting portion 80 are separated from each other.

  The above embodiment is an example in which the present invention is applied to an active matrix liquid crystal device using TFD as a nonlinear element. However, in the electro-optical device described below, a film forming process and patterning are performed on the surface of an insulating base substrate. After the wiring and electric elements are formed by the process, the original substrate is cut to form the element substrate. Therefore, by applying the present invention, yield and reliability can be improved. The present invention also relates to a plasma display device, an FED (Field Emission Display) device, an LED (Light Emitting Diode) display device, an electrophoretic display device, a thin cathode ray tube, a small television using a liquid crystal shutter, a digital micromirror device (DMD). It can also be applied to an element substrate used in various electro-optical devices such as a device using the above.

  FIG. 11 is a block diagram schematically showing a configuration of an electro-optical device including an active matrix liquid crystal device using a thin film transistor (TFT) as a pixel switching element. FIG. 12 is a block diagram of an active matrix electro-optical device provided with an electroluminescence element using a charge injection type organic thin film as an electro-optical material.

  As shown in FIG. 11, in the electro-optical device 100b composed of an active matrix liquid crystal device using TFTs as pixel switching elements, a pixel for controlling the pixel electrode 109b is provided for each of a plurality of pixels formed in a matrix. A switching TFT 130b is formed, and a data line 106b for supplying an image signal is electrically connected to the source of the TFT 130b. An image signal written to the data line 106b is supplied from the data line driver circuit 102b. Further, the scanning line 131b is electrically connected to the gate of the TFT 130b, and a scanning signal is supplied to the scanning line 131b in a pulsed manner from the scanning line driving circuit 103b at a predetermined timing. The pixel electrode 109b is electrically connected to the drain of the TFT 130b. By turning on the TFT 130b serving as a switching element for a certain period, an image signal supplied from the data line 106b is given to each pixel at a predetermined timing. Write in. The sub-image signal of a predetermined level written in the liquid crystal through the pixel electrode 109b in this way is held for a certain period with the counter electrode formed on the counter substrate (not shown).

  Here, in order to prevent the held sub-image signal from leaking, a storage capacitor 170b (capacitor) may be added in parallel with the liquid crystal capacitor formed between the pixel electrode 109b and the counter electrode. . The storage capacitor 170b holds the voltage of the pixel electrode 109b, for example, for a time that is three orders of magnitude longer than the time when the source voltage is applied. As a result, the charge retention characteristics are improved, and an electro-optical device capable of performing display with a high contrast ratio can be realized. As a method for forming the storage capacitor 170b, there is either a case where the storage capacitor 170b is formed between the capacitor line 132b which is a wiring for forming a capacitor or a case where the storage capacitor 170b is formed between the storage line 170b and the preceding scanning line 131b. Also good.

  As shown in FIG. 12, an active matrix electro-optical device 100p including an electroluminescence element using a charge injection type organic thin film is an EL (electroluminescence) element that emits light when a drive current flows through an organic semiconductor film, or It is an active matrix type display device that drives and controls light emitting elements such as LED (light emitting diode) elements with TFTs, and since all of the light emitting elements used in this type of display device self-emit, no backlight is required. In addition, there are advantages such as less viewing angle dependency.

  In the electro-optical device 100p shown here, a plurality of scanning lines 103p, a plurality of data lines 106p extending in a direction intersecting with the extending direction of the scanning lines 103p, and the data lines 106p are arranged in parallel. A plurality of common power supply lines 123p and pixels 115p corresponding to the intersections of the data lines 106p and the scanning lines 103p are configured. A data line driving circuit 101p including a shift register, a level shifter, a video line, and an analog switch is configured for the data line 106p. A scanning line driving circuit 104p including a shift register and a level shifter is configured for the scanning line 103p.

  Each pixel 115p holds a first TFT 131p to which a scanning signal is supplied to the gate electrode via the scanning line 103p and an image signal supplied from the data line 106p via the first TFT 131p. The storage capacitor 133p, the second TFT 132p to which the image signal held by the storage capacitor 133p is supplied to the gate electrode, and the common power supply line when electrically connected to the common power supply line 123p via the second TFT 132p The light emitting element 140p into which a drive current flows from 123p is comprised.

  Here, the light emitting element 140p has a configuration in which a counter electrode made of a metal film such as a hole injection layer, an organic semiconductor film as an organic electroluminescence material layer, lithium-containing aluminum, or calcium is stacked on the upper side of the pixel electrode. The counter electrode is formed over the plurality of pixels 115p across the data line 106p and the like.

(Embodiment of electronic device)
FIG. 13 is an explanatory diagram of a mobile phone showing an example of an electronic apparatus in which the electro-optical device according to the invention is mounted.

  As shown in FIG. 13, a mobile phone 90 has a plurality of operation buttons 91, an electro-optical device 100 to which the present invention is applied, and the like.

  In the present invention, since the mark formed at the intersection of the first planned cutting line and the second planned cutting line on the original substrate is linear, wiring and electrical elements are formed on the element substrate. It is in the form that is farthest away from the area. For this reason, even when the mark is formed of a conductive film, static electricity generated when the original substrate is cut does not enter the wiring or the electric element through the mark. Therefore, the yield and reliability of the element substrate can be improved.

1 is a block diagram showing an electrical configuration of an electro-optical device (liquid crystal device) to which the present invention is applied. It is a perspective view which shows the structure of an electro-optical apparatus. It is sectional drawing which shows the structure of an electro-optical apparatus. FIG. 3 is a plan view showing a layout for several pixels including a TFD element in an electro-optical device. FIG. 6 is an explanatory diagram of TFD elements formed in each pixel in the electro-optical device. It is process drawing which shows an example of the manufacturing method of the electro-optical apparatus to which this invention is applied. It is a perspective view showing typically an original substrate used for manufacturing an element substrate which constitutes an electro-optical device to which the present invention is applied. It is process sectional drawing which shows an element substrate formation process among the manufacturing processes of the electro-optical apparatus to which this invention is applied. (A), (B) is explanatory drawing which shows the positional relationship of the mark attached | subjected to the original board | substrate for forming the element substrate used for the electro-optical apparatus to which this invention is applied, and a cutting planned line, and the intersection of a cutting planned line It is explanatory drawing which expands and shows a part. (A), (B) is explanatory drawing which shows the positional relationship of another mark and cutting planned line which were attached | subjected to the original board | substrate for forming the element substrate used for the electro-optical apparatus to which this invention is applied, and a cutting planned line It is explanatory drawing which expands and shows the intersection part. 1 is a block diagram schematically showing a configuration of an electro-optical device including an active matrix type liquid crystal device using a thin film transistor (TFT) as a pixel switching element. 1 is a block diagram of an active matrix display device including an electroluminescence element using a charge injection type organic thin film as an electro-optic material. FIG. 11 is an explanatory diagram of a mobile phone as an embodiment of an electronic apparatus using the electro-optical device according to the invention.

Explanation of symbols

20 element substrate (electro-optical device substrate), 23 pixel electrode, 30 counter substrate, 51 scanning line, 52 data line, 53 pixel, 56, 56a, 56b TFD element, 80 intersection, 81 first linear mark, 82 second linear mark, 83 third linear mark, 84 fourth linear mark, 88 corner portion, 89 alignment mark, 100 electro-optical device, 100a pixel unit, 200 original substrate, 205, 206 substrate Edge, 222, 223 First metal film, L11, L21 Primary cutting planned line

Claims (14)

In the method of manufacturing an electro-optical device substrate, wherein at least wiring is formed on the surface of the insulating original substrate by a film forming step and a patterning step, and then the original substrate is cut.
When two directions orthogonal to each other on the original substrate are defined as an X direction and a Y direction, a first scheduled cutting line for the original substrate extending in the X direction and a second scheduled cutting line for the original substrate extending in the Y direction The first linear mark extending in parallel with the first planned cutting line in the vicinity of the first planned cutting line and the vicinity of the second planned cutting line at the intersection with A second linear mark extending in parallel with the second planned cutting line, a third linear mark extending along the first planned cutting line, and along the second planned cutting line Forming a fourth linear mark extending in advance, and a method for manufacturing a substrate for an electro-optical device.   2. The first, second, third, and the like according to claim 1, after cutting the substrate for the electro-optical device by cutting the original substrate along the first scheduled cutting line and the second scheduled cutting line. And determining whether or not the original substrate is suitable for cutting based on the remaining condition of the fourth linear mark.   3. The electro-optical device according to claim 1, wherein each of the first, second, third, and fourth linear marks is formed simultaneously with the conductive film that forms the wiring. A method for manufacturing a substrate.   4. The electro-optical device according to claim 1, wherein the first linear mark and the second linear mark are connected to ends close to the intersecting portion. A method for manufacturing a substrate.   4. The electro-optical device according to claim 1, wherein the first linear mark and the second linear mark are spaced apart from each other at an end close to the intersecting portion. Manufacturing method for industrial use.   An electro-optical device substrate manufactured by the manufacturing method as defined in claim 1. In an electro-optical device substrate in which at least wiring is formed by a thin film pattern on the surface of an insulating substrate,
When two directions orthogonal on the insulating substrate are defined as an X direction and a Y direction, the surface of the insulating substrate includes a first substrate edge extending in the X direction and a second substrate edge extending in the Y direction. The first linear mark extending parallel to the first substrate edge in the vicinity of the first substrate edge and the second substrate in the vicinity of the second substrate edge by the conductive film at the corner portion formed by And a second linear mark extending parallel to the substrate edge of the substrate.   8. The electro-optical device substrate according to claim 7, wherein each of the first, second, third, and fourth linear marks is made of the same material as that of the conductive film constituting the wiring.   9. The electro-optical device substrate according to claim 7, wherein the first linear mark and the second linear mark are connected to ends close to the corner portion.   9. The electro-optical device substrate according to claim 7, wherein the first linear mark and the second linear mark are spaced apart from each other at an end close to the corner portion.   11. An electro-optical device, wherein an electro-optical material is held by the electro-optical device substrate defined in any one of claims 6 to 10.   12. The electro-optical device according to claim 11, wherein the electro-optical device substrate holds a liquid crystal as the electro-optical material between the electro-optical device substrate and another substrate disposed to face the electro-optical device substrate. apparatus.   12. The electro-optical device according to claim 11, wherein the electro-optical device substrate holds an organic electroluminescent material constituting an electroluminescent element.   An electronic apparatus comprising the electro-optical device defined in any one of claims 6 to 13.

Images