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JP2005081461A - Polishing method and device of wafer or the like - Google Patents

Polishing method and device of wafer or the like Download PDF

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Publication number
JP2005081461A
JP2005081461A JP2003314064A JP2003314064A JP2005081461A JP 2005081461 A JP2005081461 A JP 2005081461A JP 2003314064 A JP2003314064 A JP 2003314064A JP 2003314064 A JP2003314064 A JP 2003314064A JP 2005081461 A JP2005081461 A JP 2005081461A
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polishing
polishing pad
dresser
replacement
polished
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Noritaka Yamamoto
徳孝 山本
Hayato Kawamata
早人 川又
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Shikoku Instrumentation Co Ltd
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Shikoku Instrumentation Co Ltd
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing method of a wafer and a polishing device therefor, easily monitoring at any time without any increase in the load of a device body control part. <P>SOLUTION: In this polishing method, a material to be polished is polished by a polishing pad and the polishing pad is dressed by a dresser alternately. In the polishing method and the polishing device, a polishing pad replacement threshold is set, the abrasion amount of the polishing pad is measured on the basis of the travel of the dresser, and the measurement result and the polishing pad replacement threshold are compared with each other to determine the replacement time of the polishing pad. Further, after the polishing pad is replaced, the polishing pad replacement threshold is reset, and the replacement time of the replaced polishing pad is determined. A material to be polished is preferably a silicon wafer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体ウェハ等の表面を研磨して平坦化する研磨パッドの研削面の摩耗量を判定し、使用限度がある研磨パッドの交換を適切な時期に実施できるようにした研磨方法およびその装置に関する。   The present invention relates to a polishing method for determining a wear amount of a grinding surface of a polishing pad for polishing and flattening a surface of a semiconductor wafer or the like, and to replace a polishing pad having a use limit at an appropriate time, and a polishing method thereof Relates to the device.

研磨装置による半導体ウェハ等の研磨は、研磨パッドが上面に固定された研磨定盤を回転させ、この研磨パッドに対面して設けられたウェハ保持具にウェハを固定した状態で、研磨パッドの上面に砥粒を含む研磨液を滴下しながら、ウェハを研磨パッドに所定の押圧力で押し付けて研磨し、研磨前にドレッシング装置を用いて研磨パッドの表面のドレッシングを行っていた。   Polishing of a semiconductor wafer or the like by a polishing apparatus is performed by rotating a polishing platen having a polishing pad fixed on the upper surface and fixing the wafer to a wafer holder provided facing the polishing pad. While a polishing liquid containing abrasive grains was dropped onto the wafer, the wafer was pressed against the polishing pad with a predetermined pressing force and polished, and the surface of the polishing pad was dressed using a dressing device before polishing.

研磨パッドは、使用中に磨耗するので、その磨耗量を測定して磨耗量が一定値以上になったかどうかを常時監視する必要があり、研磨パッドの磨耗量の計測は、パッド中央部の未研磨部と研磨部の段差をデプスゲージで測定していた。そのため、装置を停止して測定する必要があり、測定頻度が限定され、また、ゲージをパッドに接触させるため、パッド面の異物が増加するという問題があった。   Since the polishing pad wears during use, it is necessary to constantly monitor whether the amount of wear exceeds a certain value by measuring the amount of wear, and the amount of wear on the polishing pad is not measured at the center of the pad. The level difference between the polished part and the polished part was measured with a depth gauge. Therefore, it is necessary to stop the apparatus for measurement, the measurement frequency is limited, and the foreign matter on the pad surface increases because the gauge is brought into contact with the pad.

上記問題を解決するためにウェハ研磨時の資料台に対する研磨パッド高さをサンプリング測定し、研磨パッド交換時期を判定する方法が提案されているが、ウェハ厚みを介しての測定となるため、ウェハの品種や同一ウェハ品種でも加工工程の違いによるウェハ厚みの変動の影響を受けるため、精度良く測定できない場合があるというデメリットがあった。
また、研磨パッドの摩耗量を積算計算するためのデータを蓄積した上に、さらにそこから得られた研磨パッドの摩耗量の推定値を保存しておく必要があり、常時モニタリングするには装置制御用計算機にかかる負荷が大きいという問題があった(特許文献1)。
In order to solve the above problem, a method of sampling and measuring the polishing pad height relative to the data base during wafer polishing and determining the polishing pad replacement time has been proposed. However, there is a demerit that it may not be possible to measure with high accuracy because it is affected by variations in wafer thickness due to differences in processing processes.
In addition, it is necessary to accumulate the data for calculating the wear amount of the polishing pad and store the estimated value of the wear amount of the polishing pad obtained from the accumulated data. There is a problem that the load on the computer is large (Patent Document 1).

特開平9−290363号公報JP-A-9-290363

そこで、本発明は、研磨作業を中断させることなく研磨パッドの磨耗量をリアルタイムでかつウェハ等の品種や加工工程の違いによるウェハ厚みの影響を受けることなく常に精度良く測定でき、測定された結果を表示するとともに、予め設定された研磨パッドの限界磨耗量への到達時点においてアラームを出力するウェハ等の研磨方法およびその研磨装置を提供することを課題とする。
また、装置本体制御部の負荷を増やすことなく、容易に常時モニタリングすることを可能とするウェハの研磨方法およびその研磨装置を提供することを課題とする。
Therefore, the present invention can measure the wear amount of the polishing pad in real time and without being affected by the wafer thickness due to the difference in the type of wafer or the processing process without interrupting the polishing operation, and the measurement result It is an object to provide a polishing method for a wafer or the like and an apparatus for polishing the same that output an alarm when reaching a preset limit wear amount of the polishing pad.
It is another object of the present invention to provide a wafer polishing method and a polishing apparatus thereof that can be always and easily monitored without increasing the load on the apparatus main body control unit.

上記課題を解決するために、請求項1の発明は、研磨パッドで被研磨物を研磨することと研磨パッドをドレッサーによりドレッシングすることを交互に行う研磨方法において、研磨パッド交換閾値を設定し、ドレッサーの移動量にもとづいて研磨パッドの磨耗量を計測し、その計測結果と前記研磨パッド交換閾値とを比較することで研磨パッドの交換時期を判定することを特徴とし、請求項2の発明は、請求項1の発明において、さらに、研磨パッド交換後に研磨パッド交換閾値を再設定し、交換後の研磨パッドの交換時期を判定することを特徴とし、請求項3の発明は、請求項1または2の発明において、前記被研磨物がシリコンウェハであることを特徴する。   In order to solve the above-mentioned problems, the invention of claim 1 sets a polishing pad replacement threshold in a polishing method in which polishing an object to be polished with a polishing pad and dressing the polishing pad with a dresser alternately, The invention according to claim 2, wherein the wear amount of the polishing pad is measured based on the amount of movement of the dresser, and the polishing pad replacement time is determined by comparing the measurement result with the polishing pad replacement threshold. Further, in the invention of claim 1, the polishing pad replacement threshold is reset after the polishing pad replacement, and the replacement timing of the polishing pad after the replacement is determined. In the invention of 2, the object to be polished is a silicon wafer.

同様に、請求項4の発明は、被研磨物を保持する被研磨物保持具と、当該被研磨物保持具に保持された被研磨物を研磨するための研磨パッドが取り付けられた研磨定盤と、前記研磨パッドをドレッシングするためのドレッサーと、装置制御部とを有する研磨装置において、前記ドレッサーの移動量を測定し、当該測定結果にもとづいて研磨パッドの交換の要否を判定する機能を有することを特徴とし、請求項5の発明は、請求項4の発明において、前記ドレッサーの移動量の測定結果と予め設定された研磨パッド交換閾値とを比較し、当該測定結果が閾値を越えた際には研磨パッドの交換指示を通知する機能を有することを特徴とし、請求項5の発明は、請求項4の発明において、前記ドレッサーの移動量の測定結果と予め設定された研磨パッド交換閾値とを比較し、当該測定結果が閾値を越えた際にはパッド交換指示を通知する機能を有することを特徴とし、請求項6の発明は、請求項5の発明において、研磨パッド交換後に、研磨パッド交換閾値を再設定する機能を有することを特徴する。   Similarly, the invention of claim 4 is a polishing surface plate to which a polishing object holder for holding a polishing object and a polishing pad for polishing the polishing object held by the polishing object holder are attached. And a polishing device having a dresser for dressing the polishing pad and a device control unit, and a function of measuring the movement amount of the dresser and determining whether or not the polishing pad needs to be replaced based on the measurement result. The invention of claim 5 is characterized in that, in the invention of claim 4, the measurement result of the movement amount of the dresser is compared with a preset polishing pad replacement threshold value, and the measurement result exceeds the threshold value. The invention of claim 5 has a function of notifying a replacement instruction of the polishing pad. In the invention of claim 4, the measurement result of the movement amount of the dresser and a preset polishing pad are provided. The present invention has a function of notifying a pad replacement instruction when the measured result exceeds the threshold, and the invention according to claim 6 is the polishing pad replacement according to the invention of claim 5. It has a function of resetting the polishing pad replacement threshold later.

また、請求項7の発明は、請求項4ないし6のいずれかの発明において、前記ドレッサーの移動量の測定結果にもとづいて研磨パッドの交換の要否を判定する研磨パッド交換時期制御部を有することを特徴とする。
このように、装置本体制御部とは別に「研磨パッド交換時期制御部」を設け、交換時期のアラームなど主要信号のみを装置本体制御部に伝送することにより、装置本体制御部の負荷を増やすことなく、容易に常時モニタリングすることを可能としている。
According to a seventh aspect of the present invention, in any of the fourth to sixth aspects of the present invention, the polishing pad replacement timing control unit determines whether or not the polishing pad needs to be replaced based on a measurement result of the movement amount of the dresser. It is characterized by that.
In this way, a “polishing pad replacement time control unit” is provided separately from the device main body control unit, and only main signals such as an alarm for replacement time are transmitted to the device main body control unit, thereby increasing the load on the device main body control unit. It is easy to constantly monitor.

さらに、請求項8の発明は、請求項4ないし7のいずれかの発明において、前記被研磨物がシリコンウェハであることを特徴とする。   Furthermore, an invention of claim 8 is the invention according to any one of claims 4 to 7, wherein the object to be polished is a silicon wafer.

本発明のウェハ等の研磨方法およびその研磨装置は、研磨パッドの摩耗量の判定を、ドレッサーの移動量をレーザー変位計で計測することにより行うので、研磨パッド磨耗量をリアルタイムで測定でき、しかも、ウェハ等を介して研磨パッドの摩耗量を測定しないため、ウェハ等の品種や加工工程の違いによるウェハ厚みの影響を受けることなく常に精度良く測定できる。   The method for polishing a wafer or the like and the polishing apparatus thereof according to the present invention determine the amount of wear of the polishing pad by measuring the amount of movement of the dresser with a laser displacement meter, so that the amount of wear of the polishing pad can be measured in real time. In addition, since the wear amount of the polishing pad is not measured via a wafer or the like, it can always be accurately measured without being affected by the wafer thickness due to the difference in the type of wafer or the like and the processing process.

また、研磨パッドに対して測定器が非接触なので、研磨パッド表面の異物を減少することができる。   In addition, since the measuring instrument is not in contact with the polishing pad, foreign matter on the surface of the polishing pad can be reduced.

また、本発明のウェハ等研磨方法およびその研磨装置は、装置本体制御部とは別に「交換時期制御部」を設けることにより、容易に常時モニタリングすることを可能とするウェハの研磨方法およびその研磨装置を提供することができる。   In addition, the wafer polishing method and polishing apparatus of the present invention are provided with a “replacement timing control unit” separately from the apparatus main body control unit, thereby enabling easy and constant monitoring of the wafer and its polishing method. An apparatus can be provided.

図1は、本発明に係るウェハ研磨方法の流れ図である。
本発明に係るウェハ研磨方法は、図1に示す通り、まず初期設定として研磨パッド交換閾値を設定し(STEP1)、研磨パッドを交換し(STEP2)、パッドの厚みのばらつきに対応するために0点オフセットを実施することで(STEP3)、ドレッサー移動量の計測(STEP4)が可能となる。ドレッサーの移動量の計測開始後は、測定したドレッサーの移動量とSTEP1で設定した閾値を任意のタイミングで定期的に比較することによって研磨パッドの摩耗量を判定する(STEP5)。ドレッサーの移動量が閾値より小さい場合には、研磨パッドの交換時期に達していないと判定し(STEP5)、ドレッサー移動量の計測(STEP4)を継続する。ドレッサーの移動量が閾値以上である場合には、研磨パッドの交換時期に達していると判定し(STEP5)、研磨パッド交換指示を通知する(STEP6)。かかる通知により、最適なタイミングで研磨パッド交換をするかどうかを判断することができる(STEP7)。
なお、同じ種類の研磨パッドを継続的に使用する場合は、閾値の設定(STEP1)は初期に1回実施するだけでよいが、異なる種類の研磨パッドを使用する際は、研磨パッドの種別毎に異なる閾値を再度設定する必要がある。
FIG. 1 is a flowchart of a wafer polishing method according to the present invention.
In the wafer polishing method according to the present invention, as shown in FIG. 1, first, a polishing pad replacement threshold is set as an initial setting (STEP 1), a polishing pad is replaced (STEP 2), and 0 is set to cope with variations in pad thickness. By performing the point offset (STEP 3), the dresser movement amount can be measured (STEP 4). After the measurement of the movement amount of the dresser is started, the wear amount of the polishing pad is determined by periodically comparing the measured movement amount of the dresser and the threshold set in STEP 1 at an arbitrary timing (STEP 5). If the movement amount of the dresser is smaller than the threshold value, it is determined that the polishing pad replacement time has not been reached (STEP 5), and measurement of the dresser movement amount (STEP 4) is continued. If the movement amount of the dresser is equal to or greater than the threshold, it is determined that the polishing pad replacement time has been reached (STEP 5), and a polishing pad replacement instruction is notified (STEP 6). By this notification, it is possible to determine whether or not to replace the polishing pad at an optimal timing (STEP 7).
When the same type of polishing pad is used continuously, the threshold value setting (STEP 1) need only be performed once in the initial stage. However, when using different types of polishing pads, It is necessary to set a different threshold value again.

図2は、本発明におけるウェハ研磨方法を実施した際のタイミングチャートを示している。研磨パッド交換閾値は、網掛けの「警報出力範囲」であり、計測開始前にドレッサーの待機位置からの距離を予め設定する。計測開始後、ドレッサーの移動量が閾値(警報出力範囲)に達した際に、パッド交換指示が通知(警報出力)される。研磨パッドの交換後には、閾値が再設定することにより、新たな研磨パッドの交換タイミングの通知が可能となる。   FIG. 2 shows a timing chart when the wafer polishing method according to the present invention is carried out. The polishing pad replacement threshold is a shaded “alarm output range”, and the distance from the dresser standby position is set in advance before the measurement is started. After the measurement is started, when the movement amount of the dresser reaches a threshold value (alarm output range), a pad replacement instruction is notified (alarm output). After the polishing pad is replaced, the threshold value is reset to notify the replacement timing of a new polishing pad.

本発明に係る研磨装置は、被研磨体を保持する被研磨物保持具と、保持具に保持した被研磨物を研磨する研磨パッドが取り付けられた定盤と、前記研磨パッドをドレッシングするためのドレッサーとを有する研磨装置において、レーザー変位計と反射板とで構成されたドレッサーの移動量を計測するパッド磨耗量測定装置と、測定装置の測定結果にもとづいて研磨パッドの交換の要否を判断する研磨パッド交換時期制御部とで構成される。   A polishing apparatus according to the present invention includes an object holder for holding an object to be polished, a surface plate on which a polishing pad for polishing an object held by the holder is attached, and a dressing for the polishing pad. In a polishing device having a dresser, a pad wear amount measuring device that measures the amount of movement of the dresser composed of a laser displacement meter and a reflector, and whether or not the polishing pad needs to be replaced is determined based on the measurement result of the measuring device. And a polishing pad replacement time control unit.

以下図面にもとづいて本発明に係るウェハ研磨装置の実施例を説明するが、本発明はこの実施例によって限定されるものではない。   Embodiments of a wafer polishing apparatus according to the present invention will be described below with reference to the drawings, but the present invention is not limited to these embodiments.

本実施例の研磨装置は、図3に示すように、研磨装置本体10とドレッシング装置20と研磨パッド磨耗量測定装置30と研磨作業制御部40と研磨パッド交換時期制御部50とで構成されている。以下、各装置および各部の詳細を説明する。   As shown in FIG. 3, the polishing apparatus of this embodiment includes a polishing apparatus main body 10, a dressing apparatus 20, a polishing pad wear amount measuring apparatus 30, a polishing work control unit 40, and a polishing pad replacement time control unit 50. Yes. Hereinafter, details of each device and each part will be described.

《研磨装置本体》
研磨装置本体10は、円盤状の研磨定盤12と、この研磨定盤12の上に貼付されている研磨パッド11と、研磨定盤12を回転させる研磨モータ13と、被研磨物であるウェハ16を保持する円盤状の被研磨物保持具14と、被研磨物保持・押圧ヘッド15と、研磨パッド11上に研磨液を供給する研磨液ノズル17と、で構成されている。
《Polisher body》
The polishing apparatus body 10 includes a disk-shaped polishing surface plate 12, a polishing pad 11 affixed on the polishing surface plate 12, a polishing motor 13 that rotates the polishing surface plate 12, and a wafer that is an object to be polished. A disk-shaped object holder 14 for holding 16, an object holding / pressing head 15, and a polishing liquid nozzle 17 for supplying a polishing liquid onto the polishing pad 11.

《ドレッシング装置》
ドレッシング装置20は、研磨パッド11をドレッシングするためのドレッサー(ドレス砥石)21と、このドレッサー21が取り付けられるドレッサー保持具22と、ドレッサー保持具22を回転させるドレスモータ24と、ドレッサー保持具22を上下動させて研磨パッド11に対するドレッサー21のドレス圧を変えるエアシリンダ25と、で構成されている。
《Dressing device》
The dressing device 20 includes a dresser (dress grindstone) 21 for dressing the polishing pad 11, a dresser holder 22 to which the dresser 21 is attached, a dress motor 24 that rotates the dresser holder 22, and a dresser holder 22. And an air cylinder 25 that moves up and down to change the dressing pressure of the dresser 21 against the polishing pad 11.

《パッド磨耗量測定装置》
研磨パッド磨耗量測定装置30は、フレーム(図示せず)に固定されたエアシリンダ25の側壁に取り付けられたレーザー変位計32と、ドレッサー保持具22のドレッサー回転軸23を支持するベアリング26に取り付けられた反射板支持部27に設けた反射板31とで構成されており、ドレッサー21を昇降させると、反射板31も昇降するので、レーザー変位計32と反射板31との距離が変化する。そして、この変化量はドレッサー21の昇降量に等しいので、レーザー変位計32によってその値を計測できる。したがって、非接触状態で研磨パッドの磨耗量を計測することができ、また、常時計測することができる。
《Pad wear measurement device》
The polishing pad wear amount measuring device 30 is attached to a laser displacement meter 32 attached to a side wall of an air cylinder 25 fixed to a frame (not shown) and a bearing 26 that supports a dresser rotating shaft 23 of a dresser holder 22. The reflecting plate 31 is provided on the reflecting plate support portion 27. When the dresser 21 is moved up and down, the reflecting plate 31 is also moved up and down, so that the distance between the laser displacement meter 32 and the reflecting plate 31 changes. Since this change amount is equal to the lift amount of the dresser 21, the value can be measured by the laser displacement meter 32. Therefore, the wear amount of the polishing pad can be measured in a non-contact state, and can always be measured.

《装置本体制御部》
研磨作業制御部40は、研磨装置本体10やドレッシング装置20の制御のための各種演算等を実行する制御演算部と、制御演算部が実行するプログラムや各種データ等が記憶されている記憶部と、制御演算部の演算結果等を表示する表示部と、制御演算部の演算結果に基づいて研磨装置本体10やドレッシング装置20に駆動制御信号を出力するコントローラと、オペレータの指示等を制御演算部に与える入力部と、で構成されている。
<Device body control unit>
The polishing operation control unit 40 includes a control calculation unit that executes various calculations for controlling the polishing apparatus body 10 and the dressing device 20, a storage unit that stores programs executed by the control calculation unit, various data, and the like. A control unit that displays a calculation result of the control calculation unit, a controller that outputs a drive control signal to the polishing apparatus body 10 and the dressing device 20 based on the calculation result of the control calculation unit, and an operator instruction And an input section to be provided to.

《研磨パッド交換時期制御部》
研磨パッド交換時期制御部50は、研磨パッド磨耗量測定装置30にて測定された結果を表示するとともに、予め設定された研磨パッドの限界磨耗量への到達時点においてアラームを出力、および研磨パッド交換後に閾値(変位データ)をリセット(0に再設定)する機能を有する。
さらに、摩耗量データ表示値と同期したアナログ信号を出力する端子を有するため、記録計等を接続することにより、摩耗量の経時変化を記録することも可能である。
《Polishing pad replacement timing control unit》
The polishing pad replacement timing control unit 50 displays the result measured by the polishing pad wear amount measuring device 30, outputs an alarm when reaching a preset polishing pad limit wear amount, and replaces the polishing pad. It has a function to reset (reset to 0) the threshold value (displacement data) later.
Furthermore, since it has a terminal for outputting an analog signal synchronized with the display value of the wear amount data, it is possible to record the change over time of the wear amount by connecting a recorder or the like.

《作動》
次に、本実施例に係る研磨装置の作動の概要を説明する。
本実施例に係る研磨装置は、研磨パッド11によるウェハの研磨と、ドレッサー21による研磨パッド11のドレッシングを交互に実施する。
研磨作業は、研磨定盤12に載った研磨パッド11を研磨モータ13により回転させとともに、被研磨物保持・押圧ヘッド15が被研磨物保持具14を下降させると共にウェハ16を回転させることにより行う。
ドレッシング作業は、エアシリンダ25によりドレッサー21を下降させると共にドレスモータ24によりドレッサー21を回転させることにより行う。
この際、被研磨物保持具14及びドレッサー21は、研磨作業制御部40によりそれぞれ押圧を一定に保つように制御される。
ここで、研磨パッド11は、研磨作業とドレッシング作業の両方によって摩耗することとなる。
<Operation>
Next, an outline of the operation of the polishing apparatus according to the present embodiment will be described.
The polishing apparatus according to the present embodiment alternately performs wafer polishing with the polishing pad 11 and dressing of the polishing pad 11 with the dresser 21.
The polishing operation is performed by rotating the polishing pad 11 placed on the polishing surface plate 12 by the polishing motor 13, and the workpiece holding / pressing head 15 lowers the workpiece holder 14 and rotates the wafer 16. .
The dressing operation is performed by lowering the dresser 21 by the air cylinder 25 and rotating the dresser 21 by the dress motor 24.
At this time, the workpiece holder 14 and the dresser 21 are controlled by the polishing operation control unit 40 so as to keep the pressure constant.
Here, the polishing pad 11 is worn by both the polishing operation and the dressing operation.

なお、研磨パッド交換時期制御部50は、上記限界磨耗量への到達時点において、研磨作業制御部40へアラーム信号を出力することにより、研磨作業制御部40側でアラーム発報するとともに、研磨作業を停止させるようにしてもよい。   The polishing pad replacement timing control unit 50 outputs an alarm signal to the polishing operation control unit 40 when the limit wear amount is reached, thereby issuing an alarm on the polishing operation control unit 40 side and polishing operation. May be stopped.

本実施例の研磨装置は、シリコンウェハ、石英基板、ガラス基板などの平面状基板、特にLSI作製工程途中のシリコンウェハの研磨に使用でき、層間膜CMP装置7台に適用して性能を確認したところ、作業面からは、段取り調整ロス時間の37%(33.0分/日/台)削減、点検交換ロス時間の19%(8.2分/日/台)削減、待ちロス時間の34%(18.2分/日/台)削減ができ、合計59.4分/日/台の削減が見込まれ、経費面からは、パッド使用量の40%(680万円/6カ月)削減、モニターウェハ使用量の26%(290万円/6カ月)削減、が見込まれる。   The polishing apparatus of this example can be used for polishing planar substrates such as silicon wafers, quartz substrates, and glass substrates, particularly silicon wafers during the LSI manufacturing process, and performance was confirmed by applying it to seven interlayer CMP devices. However, from the work aspect, 37% (33.0 minutes / day / vehicle) reduction of setup adjustment loss time, 19% (8.2 minutes / day / vehicle) reduction of inspection replacement loss time, and 34 of waiting loss time. % (18.2 minutes / day / vehicle) can be reduced, and a total of 59.4 minutes / day / vehicle is expected to be reduced. From the cost perspective, pad usage is reduced by 40% (6.8 million yen / 6 months). , 26% (2.9 million yen / 6 months) reduction in monitor wafer usage is expected.

本発明に係るウェハ等研磨方法の流れ図Flow chart of wafer polishing method according to the present invention 本発明に係るウェハ等研磨方法のタイミングチャートTiming chart of wafer polishing method according to the present invention 本実施例に係るウェハ研磨装置の概略図Schematic of the wafer polishing apparatus according to this embodiment

符号の説明Explanation of symbols

10 研磨装置本体
11 研磨パッド
12 研磨定盤
13 研磨モータ
14 被研磨物保持具
15 被研磨物保持・押圧ヘッド
16 ウェハ
17 研磨液ノズル
20 ドレッシング装置
21 ドレッサー
22 ドレッサー保持具
23 ドレッサー回転軸
24 ドレスモータ
25 エアシリンダ
26 ベアリング
27 反射板支持部
30 研磨パッド磨耗量測定装置
31 反射板
32 レーザー変位計
40 研磨作業制御部
50 研磨パッド交換時期制御部
DESCRIPTION OF SYMBOLS 10 Polishing apparatus main body 11 Polishing pad 12 Polishing surface plate 13 Polishing motor 14 Polishing object holder 15 Polishing object holding / pressing head 16 Wafer 17 Polishing liquid nozzle 20 Dressing device 21 Dresser 22 Dresser holder 23 Dresser rotating shaft 24 Dress motor 25 Air cylinder 26 Bearing 27 Reflecting plate support unit 30 Polishing pad wear amount measuring device 31 Reflecting plate 32 Laser displacement meter 40 Polishing work control unit 50 Polishing pad replacement time control unit

Claims (8)

研磨パッドで被研磨物を研磨することと研磨パッドをドレッサーによりドレッシングすることを交互に行う研磨方法において、研磨パッド交換閾値を設定し、ドレッサーの移動量にもとづいて研磨パッドの磨耗量を計測し、その計測結果と前記研磨パッド交換閾値とを比較することで研磨パッドの交換時期を判定することを特徴とする研磨方法。   In a polishing method that alternately polishes the workpiece with the polishing pad and dresses the polishing pad with a dresser, a polishing pad replacement threshold is set, and the amount of wear of the polishing pad is measured based on the amount of movement of the dresser. A polishing method characterized in that the polishing pad replacement time is determined by comparing the measurement result with the polishing pad replacement threshold. さらに、研磨パッド交換後に研磨パッド交換閾値を再設定し、交換後の研磨パッドの交換時期を判定することを特徴とする請求項1に記載の研磨方法。   The polishing method according to claim 1, further comprising: resetting a polishing pad replacement threshold after replacing the polishing pad, and determining a replacement timing of the polishing pad after replacement. 前記被研磨物がシリコンウェハであることを特徴とする請求項1または2に記載の研磨方法。   The polishing method according to claim 1, wherein the object to be polished is a silicon wafer. 被研磨物を保持する被研磨物保持具と、当該被研磨物保持具に保持された被研磨物を研磨するための研磨パッドが取り付けられた研磨定盤と、前記研磨パッドをドレッシングするためのドレッサーと、装置制御部とを有する研磨装置において、
前記ドレッサーの移動量を測定し、当該測定結果にもとづいて研磨パッドの交換の要否を判定する機能を有することを特徴とする研磨装置。
An object holder for holding an object to be polished, a polishing surface plate to which a polishing pad for polishing the object to be polished held by the object holder to be polished is attached, and a dressing for the polishing pad In a polishing apparatus having a dresser and an apparatus control unit,
A polishing apparatus having a function of measuring a movement amount of the dresser and determining whether or not the polishing pad needs to be replaced based on the measurement result.
前記ドレッサーの移動量の測定結果と予め設定された研磨パッド交換閾値とを比較し、当該測定結果が閾値を越えた際には研磨パッドの交換指示を通知する機能を有することを特徴とする請求項4に記載の研磨装置。   The measurement result of the movement amount of the dresser is compared with a preset polishing pad replacement threshold value, and when the measurement result exceeds the threshold value, a function of notifying a polishing pad replacement instruction is provided. Item 5. The polishing apparatus according to Item 4. 研磨パッド交換後に、研磨パッド交換閾値を再設定する機能を有することを特徴とする請求項5に記載の研磨装置。   The polishing apparatus according to claim 5, wherein the polishing apparatus has a function of resetting a polishing pad replacement threshold after the polishing pad is replaced. 前記ドレッサーの移動量の測定結果にもとづいて研磨パッドの交換の要否を判定する研磨パッド交換時期制御部を有することを特徴とする請求項4ないし6のいずれかに記載の研磨装置。   The polishing apparatus according to claim 4, further comprising a polishing pad replacement timing control unit that determines whether or not the polishing pad needs to be replaced based on a measurement result of the movement amount of the dresser. 前記被研磨物がシリコンウェハであることを特徴とする請求項4ないし7のいずれかに記載の研磨装置。
The polishing apparatus according to claim 4, wherein the object to be polished is a silicon wafer.
JP2003314064A 2003-09-05 2003-09-05 Polishing method and device of wafer or the like Pending JP2005081461A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018164790A (en) * 2018-08-01 2018-10-25 豊丸産業株式会社 Enclosed game machine
WO2022249787A1 (en) * 2021-05-24 2022-12-01 株式会社荏原製作所 Substrate processing device and substrate processing method
CN115592565A (en) * 2022-10-14 2023-01-13 西安奕斯伟材料科技有限公司(Cn) A device and method for dressing grinding wheels

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018164790A (en) * 2018-08-01 2018-10-25 豊丸産業株式会社 Enclosed game machine
WO2022249787A1 (en) * 2021-05-24 2022-12-01 株式会社荏原製作所 Substrate processing device and substrate processing method
JP2022180125A (en) * 2021-05-24 2022-12-06 株式会社荏原製作所 Substrate processing apparatus and substrate processing method
JP7735084B2 (en) 2021-05-24 2025-09-08 株式会社荏原製作所 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
CN115592565A (en) * 2022-10-14 2023-01-13 西安奕斯伟材料科技有限公司(Cn) A device and method for dressing grinding wheels

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