JP2005079144A - Multilayer wiring board and probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer wiring board used for a probe card for performing an electrical inspection, which is excellent in electrical characteristics of a sub power source supplied to a semiconductor element.
A base substrate 1 having a wiring conductor layer 2 formed between insulating layers and a thin film multilayer in which a plurality of resin insulating layers 16 are stacked and a thin film wiring layer 15 is formed between resin insulating layers 16. A plurality of electrode pads 3 formed on the surface of the thin film multilayer portion 12 and electrically connected to the thin film wiring layer 15 and the electrode of the semiconductor element 7 to inspect the electrical connection of the semiconductor element 7; And a plurality of connection pads 13 which are formed on the main surface of the base substrate 1 and electrically connect the electrode pad 3, the thin film wiring layer 15 and the wiring conductor layer 2. A plurality of sub-power supply connection pad groups 4 including sub-power supply connection pads 4a, 4b, 4c, and 4d are included, and the sub-power supply connection pad group 4 is disposed so as to be located immediately below the outer peripheral portion of the semiconductor element. .
[Selection] Figure 1

Description

  The present invention relates to a multilayer wiring board used in a probe card for electrical inspection of semiconductor elements and the like.

  Conventionally, when a semiconductor element is electrically inspected, a probe card having a needle-like probe electrode pad, generally called a cantilever method, is connected to the electrode pad of the semiconductor element and inspected. . However, in recent years, with the high integration of semiconductor elements and the increase in the number of processing signals, the electrode pads of semiconductor elements have become increasingly multi-pin and narrow pitched. In the cantilever type probe card, the probe electrode pad Since it is difficult to narrow the pitch and arrange a large number, the inspection method has been changed to a method using a vertical probe card in which vertical needle-like probes are finely arranged.

  FIG. 4 shows a schematic sectional view of a vertical probe card. In FIG. 4, 101 is a base substrate, 103 is a probe electrode pad, 107 is a semiconductor element, 108 is an electrode of the semiconductor element 107, 109 is a relay board, 110 is a vertical probe, 111 is a multilayer wiring board, and 112 is a thin film The multilayer portion, 113 is a connection pad, and 114 is an external connection electrode pad.

  In the vertical probe card, a multilayer wiring substrate 111 is disposed on a relay substrate 109 made of resin or the like, and a vertical needle-shaped vertical probe 110 is disposed thereon. The electrical inspection of the semiconductor element 107 is performed by connecting the electrode 108 of the semiconductor element 107 to be inspected and the vertical probe 110. Note that anisotropic conductive rubber or the like may be used instead of the vertical probe 110. The electrode 108 of the semiconductor element 107 is constituted by a main power supply electrode, a ground electrode, a signal electrode, and a sub power supply electrode (an analog circuit power supply, a signal input / output power supply, etc.) for driving the semiconductor element. Is done.

  In general, considering the electrical characteristics, the sub-power supply of the multilayer wiring substrate 111 is preferably low in wiring resistance because if the wiring resistance of the transmission line is high, the input waveform is attenuated when output from the transmission line. If the inductance of the transmission line wiring is large, spike-like noise is generated in the output waveform corresponding to the rising and falling portions of the input waveform.

  The multilayer wiring board 111 is formed of an epoxy resin on the main surface of a base substrate 101 made of ceramics such as alumina ceramics or aluminum nitride ceramics, in which a plurality of insulating layers are laminated and a wiring conductor layer is formed between the insulating layers. In addition, a plurality of resin insulation layers are formed by applying a resin precursor by spin coating, etc. and heat-curing, and a metal such as copper or aluminum between the resin insulation layers. A thin film multilayer portion 112 formed with a thin film wiring layer formed by employing a thin film forming technique such as a plating method or a vapor deposition method and a photolithography technique, and the surface layer of the thin film multilayer portion 112 is perpendicular to the surface layer. A probe electrode pad 103 is formed for connection to the probe 110 of the mold. Further, external connection electrode pads 114 are formed on the lower surface of the base substrate 101 for connection to the relay substrate 109. The probe electrode pads 103 and the external connection electrode pads 114 are formed of the base substrate 101 and the thin film multilayer. The connection pads 113 existing at the interface of the parts 112 are connected.

  However, recently, the development period of the semiconductor element 107 has been greatly shortened, and the probe card used for the electrical inspection is also required to meet the short delivery date. Although the above-mentioned vertical type probe card is excellent in increasing the number of pins and narrowing the pitch, there is a problem that the manufacturing delivery time is longer than that of the cantilever type.

  The multilayer wiring board 111 used for the vertical probe card is designed based on the layout of the electrodes 108 of the semiconductor element 107 to be inspected, and the multilayer wiring board 111 is designed after the design of the semiconductor element 107 is completed. A base substrate 101 is manufactured by laminating a conductive pattern and an insulating layer made of ceramics or the like in which a via hole is formed and firing at a high temperature. Thereafter, a thin film wiring conductor pattern and an organic layer are formed on the base substrate 101 one by one from the lower layer. It is necessary to produce the thin film multilayer portion 112 by laminating an insulating layer made of resin and forming a via hole. As a result, the production delivery time becomes very long.

  Therefore, in order to shorten the manufacturing delivery time of these multilayer wiring boards 111 and to manufacture them at low cost, the multilayered wiring board 111 is made common so that the base board 101 of the multilayer wiring board 111 can be commonly used for various types of semiconductors. The base substrate 101 is manufactured before the design of the element 107 is started, and an effort is made to reduce the manufacturing time of the base substrate 101.

  FIG. 5 is a plan view showing an example of a conventional multilayer wiring board 111. In FIG. 5, 101 is a base substrate, 107 is a semiconductor element, 103 is a probe electrode pad, 104a is a sub power connection pad (A), 105 is a signal wiring, 106 is a sub power connection wiring, and 112 is a thin film multi-layer part. Indicates.

The sub power connection pad (A) 104a has a plain wiring conductor layer on the surface of the base substrate 101, but the pad layout of the electrodes 108 of the semiconductor element 107 is completely different for each semiconductor element 107. Similarly to the electrode pads, the connection wiring 106 is connected from the sub power connection pad (A) 104a on the surface of the base substrate 101 in the same manner as the other signal wirings 105.
JP 2002-76073 A

  However, the sub-power supply connection wiring 106 of the semiconductor element 107 has a narrow wiring width and a long wiring length, so that the wiring resistance increases and the inductance also increases. As a result, noise is generated in the transmission line of the sub-power supply and the electric power is increased. There was a problem that the characteristics were not good.

  Therefore, the present invention has been completed in view of the above-mentioned conventional problems, and its purpose is to reduce the manufacturing delivery time and to improve the electrical characteristics of the sub power connection wiring. It is to provide a substrate and a probe card using the substrate.

  The multilayer wiring board of the present invention comprises a base substrate in which a plurality of insulating layers are laminated, a wiring conductor layer formed between the insulating layers, and a resin insulating layer laminated on the main surface of the base substrate. A thin film multi-layer part in which a plurality of layers are formed and a thin film wiring layer is formed between the resin insulating layers, and is electrically connected to the thin film wiring layer and the electrode of the semiconductor element formed on the surface of the thin film multi-layer part A plurality of electrode pads for inspecting electrical connection of the semiconductor element, and a plurality of electrode pads formed on the main surface of the base substrate to electrically connect the electrode pads, the thin film wiring layer, and the wiring conductor layer. The plurality of connection pads include a plurality of sub power supply connection pad groups each including a plurality of sub power connection pads, and the sub power connection pad group is an outer peripheral portion of the semiconductor element. And it is characterized in that it is arranged so as to be positioned below.

  In addition, the probe card of the present invention is formed on the other main surface of the multilayer wiring board of the present invention, the probe connected on the electrode pad, and the base substrate, and is electrically connected to the connection pad. An external connection electrode pad, and a relay substrate formed with a wiring layer having one end electrically connected to the external connection electrode pad and the other end electrically connected to the semiconductor device inspection apparatus. It is characterized by comprising.

  According to the multilayer wiring board of the present invention, a plurality of insulating layers are laminated, a base substrate in which a wiring conductor layer is formed between the insulating layers, and a resin insulating layer laminated on the main surface of the base substrate. A thin film multilayer part in which a plurality of layers are formed and a thin film wiring layer is formed between resin insulation layers, and a semiconductor that is electrically connected to the thin film wiring layer and the electrode of the semiconductor element formed on the surface of the thin film multilayer part A plurality of electrode pads for inspecting the electrical connection of the element; and a plurality of connection pads formed on the main surface of the base substrate to electrically connect the electrode pads, the thin film wiring layer and the wiring conductor layer. The plurality of connection pads include a plurality of sub-power supply connection pad groups each including a plurality of sub-power supply connection pads, and the sub-power supply connection pad groups are respectively disposed so as to be located immediately below the outer peripheral portion of the semiconductor element. about Probe card for electrical inspection with excellent electrical characteristics of sub-power supply because the wiring width connecting the electrode pad for the sub-power supply and the sub-power supply connection pad is wide and the wiring length can be shortened A multilayer wiring board used in the above can be provided.

  In addition, according to the probe card of the present invention, it is possible to provide a probe card capable of performing an electrical test with high accuracy by including the multilayer wiring board of the present invention.

  The multilayer wiring board of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing an example of an embodiment of a multilayer wiring board according to the present invention. In FIG. 1, 1 is a base substrate, 7 is a semiconductor element, 3 is an electrode pad for probe connection, 4 is a sub-electrode connection pad group, 4a is a sub-power connection pad (A), and 4b is a sub-power connection pad. (B) 4c is a sub-power connection pad (C), 4d is a sub-power connection pad (D), 5 is a signal wiring, 6 is a sub-power connection wiring, and 12 is a thin film multilayer section.

  The multilayer wiring board 11 of the present invention comprises a base substrate 1 in which a plurality of insulating layers are laminated and a wiring conductor layer 2 is formed between the insulating layers, and a resin insulation laminated on the main surface of the base substrate 1. A thin film multilayer portion 12 in which a plurality of layers 16 are laminated and a thin film wiring layer 15 is formed between the resin insulation layers 16, and the thin film wiring layer 15 and the semiconductor element 7 formed on the surface of the thin film multilayer portion 12. A plurality of electrode pads 3 that are electrically connected to the electrodes 8 to inspect the electrical connection of the semiconductor element 7, and the electrode pads 3, the thin-film wiring layer 15 and the wiring conductor layer that are formed on the main surface of the base substrate 1 And a plurality of connection pads 13 for electrically connecting two, the plurality of connection pads 13 includes a plurality of sub-power supply connection pad groups 4 including a plurality of sub-power supply connection pads 4a, 4b, 4c, 4d. Sub power supply connection pad group 4 includes semiconductor elements It is arranged so as to be located immediately below the outer peripheral portion of the. In FIG. 1, four sub power connection pads 4a, 4b, 4c, and 4d are shown as a plurality of sub power connection pads. However, the number of sub power connection pads may be any number. The number of sub-power supply connection pad groups 4 is not limited to four.

  According to the multilayer wiring board 11 of the present invention, the sub-power supply connection pad group 4 formed on the main surface of the base substrate 1 is arranged so as to be located immediately below the outer peripheral portion of the semiconductor element 7. Since the pad layout of the electrode 8 is completely different for each semiconductor element 7 and the sub power supply electrode of the semiconductor element 7 is located at any position, the sub power supply of the semiconductor element 7 is located immediately below the outer peripheral portion of the semiconductor element 7. The distance between the electrode for power supply and the sub power supply connection pads 4a, 4b, 4c, 4d can be reduced, and the wiring length of the sub power connection wiring 6 can be shortened and the wiring width can be increased. As a result, the wiring resistance and inductance of the sub power supply connection wiring 6 can be reduced, and the multilayer wiring board 11 having excellent electrical characteristics for supplying the sub power supply power to the semiconductor element 7 can be provided.

  Of the plurality of sub-power supply connection pads 4a, 4b, 4c, 4d in the sub-power supply connection pad group 4, the frequency of use of the sub-power supply connection pads 4a, 4b, 4c, 4d in order from the one closest to the semiconductor element 7 It is good to place them in order of priority in descending order. As shown in FIG. 1, the sub power connection pad (A) 4a, the sub power connection pad (B) 4b, the sub power connection pad (C) 4c, and the sub power connection pad (D) 4d are prioritized in this order. If provided, the wiring length and thickness of the sub power connection wiring 6 that should be given the highest priority can be made shorter and thicker than the sub power connection wiring 6 connected to other sub power connection pads. The wiring resistance and inductance of the sub power connection wiring 6 can be reduced, and stable power of the sub power can be provided to the semiconductor element 7.

  The sub power supply electrode of the semiconductor element 7 is a sub power supply electrode for supplying a voltage lower than the main power supply for operating the entire semiconductor element 7, and is a part of the circuit of the semiconductor element 7, for example, an analog circuit. And power supply electrodes for supplying power to individual circuits such as signal input / output circuits and memory circuits, and are provided to supply necessary voltages according to the driving voltages of the respective circuits.

  FIG. 2 is a sectional view showing a section taken along line A-A 'of the multilayer wiring board 11 of the present invention. In FIG. 2, 1 is a base substrate, 2 is a wiring conductor layer, 12 is a thin film multilayer part, 15 is a thin film wiring layer, 16 is a resin insulating layer, and 17 is a via hole in the thin film multilayer part.

  The base substrate 1 is formed by laminating a plurality of insulating layers, and a wiring conductor layer 2 is formed between the insulating layers. Further, on the main surface of the base substrate 1, a plurality of connection pads 13 for electrically connecting the thin film wiring layer 15 and the wiring conductor layer 2 and a plurality of sub-power supply connection pads 4a, 4b forming a part of the connection pad 13 are provided. 4c and 4d are provided, and external connection electrode pads 14 electrically connected to the connection pads 13 via the wiring conductor layer 2 are formed on the other main surface.

  The base substrate 1 is made of an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or a non-oxide such as an aluminum nitride sintered body having an oxide film on its surface or a silicon carbide sintered body. Further, it is made of an electrically insulating material such as a glass ceramic resin obtained by impregnating a glass fiber base material with an epoxy resin or a glass fiber base material impregnated with a bismaleimide triazine resin. If the base substrate 1 is made of, for example, an aluminum oxide sintered body, an appropriate organic solvent or solvent is added to and mixed with raw material powders such as alumina, silica, calcia, and magnesia to form a slurry. A ceramic green sheet (ceramic green sheet) is formed by adopting a doctor blade method or a calender roll method. After that, an appropriate punching process is performed on the ceramic green sheet to obtain a predetermined shape, and these ceramic green sheets are laminated. Manufactured by firing at high temperature (about 1600 ° C). Alternatively, a raw material powder is prepared by adding an appropriate organic solvent and solvent to a raw material powder such as alumina, and the raw material powder is formed into a predetermined shape by a press molding machine. Finally, the compact is heated to a high temperature (about 1600 ° C). ) May be fired. Further, when the base substrate 1 is made of glass epoxy resin, for example, it is manufactured by impregnating a base material made of glass fiber with an epoxy resin precursor and thermosetting the epoxy resin precursor at a predetermined temperature.

  The metal conductor layer 2 and the connection pads 13 of the base substrate 1, the plurality of sub-power supply connection pads 4a, 4b, 4c and 4d, and the external connection electrode pads 14 are formed by depositing a metallized layer at predetermined positions on the ceramic green sheet. Formed by. The metallized layer is made of a refractory metal such as tungsten, molybdenum, or manganese, and a metal paste obtained by adding an organic solvent and a solvent to the metal powder is mixed in a predetermined pattern on the ceramic green sheet by a conventionally known screen printing method. It is formed by being deposited on and fired simultaneously with the ceramic green sheet. The sub-power supply connection pads 4a, 4b, 4c, 4d and the external connection electrode pads 14 are electrically connected by through conductors such as via holes formed in the base substrate 1.

  Further, a thin film multilayer portion 12 is formed in which a plurality of resin insulation layers 16 are laminated on the main surface of the base substrate 1 and a thin film wiring layer 15 is formed between the resin insulation layers 16. The resin insulating layer 16 of the thin film multilayer portion 12 electrically insulates the thin film wiring layer 15 positioned above and below, and the thin film wiring layer 15 functions as a transmission path for transmitting an electric signal. In addition, an electrode pad 3 is formed on the surface of the thin film multilayer portion so as to be electrically connected to the thin film wiring layer 15 and connected to the electrode 8 of the semiconductor element 7.

  The resin insulating layer 16 of the wiring multilayer portion 12 is composed of an insulating film layer and an insulating adhesive layer, and the insulating film layer is made of polyimide resin, polyphenylene sulfide resin, wholly aromatic polyester resin, fluorine resin, or the like. The insulating adhesive layer is made of polyamideimide resin, siloxane-modified polyimide resin, siloxane-modified polyamideimide, bismaleimide triazine resin, epoxy resin, or the like. For example, the resin insulating layer 16 of the thin film multilayer portion 12 is obtained by applying an insulating adhesive to an insulating film layer of about 12.5 to 50 μm to a dry thickness of about 5 to 20 μm using a doctor blade method or the like and then drying it. This is prepared by stacking the upper surfaces of the base substrate 1 and the lower resin insulating layer 16 so that the lower surface becomes an insulating adhesive layer, and applying heat and pressure using a hot press device.

  The thin film wiring layer 15 formed between the resin insulation layers 16 of the thin film multilayer portion 12 is made of a metal material such as copper, gold, aluminum, nickel, chromium, molybdenum, titanium, and alloys thereof, and these are sputtered, It is formed by adopting thin film formation techniques such as vapor deposition and plating. The method for forming the thin-film conductor layer 15 of the thin-film multilayer portion 12 is, for example, first of a wide area on the surface of the resin insulating layer 16 of the thin-film multilayer portion 12, mainly composed of a copper layer, and diffusion prevention on at least one main surface of the copper layer A base conductor layer is formed by depositing chromium, molybdenum, titanium or the like as a layer (barrier layer). Next, a photoresist is formed in a desired pattern thereon, and the main conductor layer portion is formed to a desired thickness by plating using this photoresist as a mask. Thereafter, an unnecessary portion of the photoresist that has not been plated is peeled off, and the underlying conductor layer is removed by etching, whereby a desired pattern can be processed.

  Further, a via hole 17 penetrating at a predetermined position is formed in the resin insulating layer 16 of the thin film multilayer portion 12. The via hole 17 is formed, for example, by removing the resin insulating layer 16 of the thin film multilayer portion 12 at a predetermined position with an ultraviolet laser or the like. Usually, the upper wiring conductor layer 15 is formed in the thin film wiring layer 15 disposed between the resin insulation layers 16 inside thereof in the same manner as the method for forming the thin film wiring layer 15, thereby forming the space between the thin film wiring layers 15 between the layers. Is conducted. The via holes 17 serve as connection paths that electrically connect the thin film wiring layers 15 positioned above and below the resin insulating layer 16 of the thin film multilayer portion 12.

  The main conductor of the thin film wiring layer 15 formed on the surface of the resin insulating layer 16 that is the uppermost layer of the thin film multilayer portion 12 is led from the viewpoint of electrical connection reliability and environmental resistance of the probe 10. The body is preferably made of copper. In that case, nickel or gold is preferably deposited on the main conductor.

  FIG. 3 is a schematic cross-sectional view showing an example of an embodiment of the probe card of the present invention, wherein 9 is a relay substrate, 10 is a probe, 7 is a semiconductor element, and 8 is an electrode of the semiconductor element 7. . Note that the same reference numerals as those in FIGS. 1 and 2 are given to the portions showing the multilayer wiring board 11.

  The probe card of the present invention is electrically connected to the multilayer wiring board 11 of the present invention and the probe 10 connected on the electrode pad 3 and the external connection pad 14 having one end formed on the other main surface of the base substrate 1. And a relay substrate 9 on which a wiring layer is formed, the other end of which is electrically connected to a semiconductor device inspection device (not shown).

  The probe 10 is a spring-like needle-shaped connection terminal mainly made of a metal such as gold or aluminum. The probe 10 is joined to the electrode pad 3 by using solder or the like made of tin, lead or the like, or under pressure. Attached by fixing. The multilayer wiring board 11 and the semiconductor element 7 are connected by bringing the opposite end attached to the electrode pad 3 into contact with the electrode 8 of the semiconductor element 7.

  The relay board 9 is a multilayer wiring board based on a general epoxy resin containing glass fiber, and electrically connects the external connection electrode pads 14 of the multilayer wiring board 11 and a semiconductor device inspection device (not shown). It has a function to connect to. The connection between the external connection electrode pad 14 of the multilayer wiring board 11 and the relay board 9 is made by using ball-shaped solder or the like mainly composed of tin, lead or the like. (Not shown) are connected using pogo pins or the like.

  Thus, according to the probe card of the present invention, the probe 10 is electrically connected to the upper surface of the multilayer wiring board 11 of the present invention, one end is electrically connected to the external connection electrode pad 14 of the multilayer wiring board 11, and the other end is a semiconductor. Sub-power supply connection wiring to the semiconductor element 7 from the sub-power connection pads 4a, 4b, 4c, and 4d is provided. By supplying the sub power supply via 6, the electrical inspection of the semiconductor element 7 with high accuracy can be performed.

  It should be noted that the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the scope of the present invention. For example, a probe card that uses anisotropic conductive rubber or the like instead of the probe 10 described above may be adopted to connect the semiconductor element 7 and the multilayer wiring board 11.

It is a top view which shows an example of embodiment of the multilayer wiring board of this invention. It is sectional drawing in the A-A 'line | wire of the multilayer wiring board of FIG. It is a cross-sectional schematic diagram which shows an example of embodiment of the probe card of this invention. It is a cross-sectional schematic diagram which shows the example of the conventional vertical type probe card. It is a top view which shows the example of the conventional multilayer wiring board.

Explanation of symbols

1: Base substrate 2: Wiring conductor layer 3: Electrode pad 4: Sub power source connection pad group 4a: Sub power source connection pad (A)
4b: Sub power connection pad (B)
4c: Sub power connection pad (C)
4d: Sub power supply connection pad (D)
5: Signal wiring 6: Connection wiring for sub power supply 7: Semiconductor element 8: Electrode (of semiconductor element) 9: Relay substrate
10: Probe
11: Multilayer wiring board
12: Thin film multilayer
13: Connection pad
14: Electrode pad for external connection
15: Thin film wiring layer
16: Resin insulation layer
17: Via hole in thin film multilayer

Claims (2)

A base substrate in which a plurality of insulating layers are stacked and a wiring conductor layer is formed between the insulating layers, and a plurality of resin insulating layers that are stacked on the main surface of the base substrate are stacked and the resin insulation A thin film multilayer portion in which a thin film wiring layer is formed between the layers, and an electrical connection of the semiconductor element that is electrically connected to the thin film wiring layer and the electrode of the semiconductor element formed on the surface of the thin film multilayer portion And a plurality of connection pads that are formed on the main surface of the base substrate and electrically connect the electrode pads, the thin film wiring layer, and the wiring conductor layer. The plurality of connection pads include a plurality of sub power supply connection pad groups each including a plurality of sub power connection pads, and the sub power connection pad groups are respectively arranged so as to be located immediately below the outer peripheral portion of the semiconductor element. Multi-layer wiring board, characterized in that it is. 2. The multilayer wiring board according to claim 1, a probe connected on the electrode pad, and an external connection electrode pad formed on the other main surface of the base substrate and electrically connected to the connection pad. And a relay substrate on which a wiring layer is formed, one end of which is electrically connected to the external connection electrode pad and the other end of which is electrically connected to the semiconductor device inspection apparatus. Probe card.

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