JP2005072118A - Epitaxial growth device - Google Patents
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- 239000007789 gas Substances 0.000 claims abstract description 75
- 239000012159 carrier gas Substances 0.000 claims abstract description 8
- 238000005304 joining Methods 0.000 claims description 22
- 238000005192 partition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000009826 distribution Methods 0.000 abstract description 7
- 239000002994 raw material Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 39
- 238000000034 method Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
Description
本発明は気相成長法を用いた枚葉式エピタキシャル成長装置に関し、特に、成長させる膜厚均一性に優れたエピタキシャル製造装置に関するものである。 The present invention relates to a single wafer epitaxial growth apparatus using a vapor phase growth method, and more particularly to an epitaxial manufacturing apparatus excellent in film thickness uniformity to be grown.
半導体ウェーハ、例えばシリコンウェーハの製造分野においては、基板の表面にシリコンエピタキシャル層を形成した、いわゆるエピタキシャルウェーハ（以下、エピウェーハと略す）が従来から知られている。この技術によれば、基板上に任意の膜厚や抵抗率を持つ単結晶シリコン層を形成できるので、高性能の半導体デバイスを製造することができる。例えばバイポーラトランジスタの分野では高速化の目的で、ＣＭＯＳメモリの分野ではソフトエラー、ラッチアップ等の不良対策として、エピウェーハの使用が極めて有効であることが認識されており、需要が高まっている。 In the field of manufacturing semiconductor wafers such as silicon wafers, so-called epitaxial wafers (hereinafter abbreviated as epi-wafers) in which a silicon epitaxial layer is formed on the surface of a substrate are conventionally known. According to this technique, since a single crystal silicon layer having an arbitrary film thickness and resistivity can be formed on a substrate, a high-performance semiconductor device can be manufactured. For example, in the field of bipolar transistors, the use of epiwafers has been recognized to be extremely effective as a countermeasure for defects such as soft errors and latch-ups for the purpose of speeding up, and in the field of CMOS memories, and the demand is increasing.
この種のエピウェーハにおいて、通常、シリコンエピタキシャル層の膜厚は規定されており、規格管理されたものが出荷されている。例えば、厚いエピタキシャル層が要求される用途では数μｍ〜２０μｍ程度、薄いエピタキシャル層が要求される用途では１μｍ弱〜数μｍ程度に設定されている。 In this type of epi-wafer, the thickness of the silicon epitaxial layer is usually specified, and the standard-controlled one is shipped. For example, in applications where a thick epitaxial layer is required, the thickness is set to about several μm to 20 μm, and in applications where a thin epitaxial layer is required, it is set to about 1 μm to about several μm.
半導体デバイスの製造工程においてエピタキシャル層を形成する技術として、通常、気相エピタキシャル法が用いられている。これに用いるエピタキシャル成長装置は、枚葉式エピ炉の場合、チャンバー（炉）内のサセプタ上にウェーハが載置され、ウェーハが加熱されるとともに、ウェーハの上方にシラン系ガス（ＳｉＨ4、ＳｉＨ2Ｃｌ2、ＳｉＨＣｌ3、ＳｉＣｌ4）等の原料ガスとＨ2等のキャリアガスの混合ガスが供給されることにより、ウェーハ表面にＳｉエピタキシャル層が形成されるものである。 As a technique for forming an epitaxial layer in a manufacturing process of a semiconductor device, a vapor phase epitaxial method is usually used. In the case of a single wafer epitaxial furnace, the epitaxial growth apparatus used for this is a wafer placed on a susceptor in a chamber (furnace), the wafer is heated, and a silane-based gas (SiH 4 , SiH 2 is placed above the wafer. By supplying a mixed gas of a source gas such as Cl 2 , SiHCl 3 or SiCl 4 ) and a carrier gas such as H 2 , an Si epitaxial layer is formed on the wafer surface.
従来の枚葉式エピタキシャル成長装置で発生するエピタキシャル膜厚分布の悪化の原因として、ウェーハ上を流れるガス流速がガスの流れ方向と垂直方向かつウェーハ面と平行方向に一様でないことが考えられる。ガス流速を均一化する方法としては多孔バッフルを用いた整流化による方法がよく用いられている。この組み合わせでエピタキシャル膜成長をすることが従来は知られているが、バッフル孔の影響でガス流速の強弱ができてしまう。以上のように、従来の流入ガス整流化では、その効果が不十分であった。
半導体デバイスの分野においては高集積化が年々進んでおり、より微細な加工が必要になってきている。この際、例えばフォトリソグラフィー工程における露光装置の焦点深度等の関係から、デバイス材料となるシリコンウェーハの平坦度が高いことが要求される。ウェーハの平坦度は、フォトリソグラフィー工程のみならず、他の工程においても加工精度を向上させる上で重要なファクターとなっている。 In the field of semiconductor devices, higher integration is progressing year by year, and finer processing is required. At this time, the flatness of the silicon wafer as the device material is required to be high, for example, from the relationship of the depth of focus of the exposure apparatus in the photolithography process. The flatness of the wafer is an important factor for improving the processing accuracy not only in the photolithography process but also in other processes.
しかしながら、従来の枚葉式エピ炉を用いたエピタキシャル層の成長方法においてはウェーハ面内の膜厚バラツキが大きく、特にエピタキシャル膜厚変化がなだらかでなく、局所的に厚い箇所や薄い箇所が生じるという問題があった。したがって、エピウェーハの製造工程において、スライシングからポリッシングまでの加工精度を上げて下地ウェーハの平坦度をいくら向上させたとしても、その上に成長させるエピタキシャル層の凹凸があるために、結果的にウェーハ表面の平坦度が悪くなるという問題があった。 However, in the epitaxial layer growth method using a conventional single wafer epitaxial furnace, the film thickness variation in the wafer surface is large, especially the epitaxial film thickness change is not gentle, and locally thick and thin parts are generated. There was a problem. Therefore, no matter how much the flatness of the underlying wafer is improved by increasing the processing accuracy from slicing to polishing in the manufacturing process of the epi-wafer, there is an unevenness of the epitaxial layer grown on it, resulting in the wafer surface as a result. There was a problem that the flatness of the film deteriorated.
本発明は、上記の課題を解決するためになされたものであって、エピタキシャル層の膜厚分布をなだらかにし、ウェーハ面内の凹凸をなくすことで全体としてウェーハの平坦度を改善することができるエピタキシャル成長装置を提供することを目的とする。 The present invention has been made in order to solve the above-described problem, and it is possible to improve the flatness of the wafer as a whole by smoothing the film thickness distribution of the epitaxial layer and eliminating the unevenness in the wafer surface. An object is to provide an epitaxial growth apparatus.
上記の目的を達成するために、本発明のエピタキシャル成長装置は、ウェーハ（図１の７）を収容するチャンバー（図１の２）と、前記チャンバー内に回転可能に設置され、前記ウェーハを支持するサセプタ（図１の６）と、原料ガスまたはキャリアガスを少なくとも含むガスを前記チャンバー内に供給するガス供給源（図１の３）と、前記ガス供給源から供給されるガスを整流化させるための整流部材（図１の５）と整流化された前記ガスをチャンバー内に流出させるガス流出口（図３の１２）を有し、前記整流部材とガス流出口はほぼ水平方向を向いており、かつ両者間に段差が設けられている。
また、前記整流部材と前記ガス流出口を連結するための接合部材（図３の８）が組み込まれていて、前記接合部材がほぼ一定の傾斜を有することにより、流入ガスの流速がより均一化しエピタキシャル成長膜厚の均一性を良くする。このときの傾斜部の水平面との角度は２０°〜８０°が望ましい。
このときの前記接合部材の水平面との角度が２０°未満では、傾斜が少なく、前記接合部材が前記整流部と直線的に結合している場合と同様に上記の通りの傾斜化する効果が少ない。またこのときの傾斜の水平面との角度が８０°を超える場合は、前記整流部から前記接合部材に流れ込むガスが接合部材の壁面に衝突し、乱流を発生させ、ガス分布の粗密化が起こり、整流効果が無くなり、ウェーハ上方空間で速度分布が乱れる。
In order to achieve the above object, an epitaxial growth apparatus of the present invention supports a wafer (2 in FIG. 1) that accommodates a wafer (7 in FIG. 1), and is rotatably installed in the chamber. A susceptor (6 in FIG. 1), a gas supply source (3 in FIG. 1) that supplies a gas containing at least a source gas or a carrier gas into the chamber, and a gas supplied from the gas supply source is rectified. The flow straightening member (5 in FIG. 1) and the gas flow outlet (12 in FIG. 3) through which the rectified gas flows out into the chamber, the flow straightening member and the gas flow outlet are substantially in the horizontal direction. In addition, a step is provided between them.
Further, a joining member (8 in FIG. 3) for connecting the rectifying member and the gas outlet is incorporated, and the joining member has a substantially constant inclination, so that the flow velocity of the inflowing gas is made more uniform. Improves uniformity of epitaxial growth film thickness. At this time, the angle between the inclined portion and the horizontal plane is preferably 20 ° to 80 °.
At this time, when the angle of the bonding member with respect to the horizontal plane is less than 20 °, the inclination is small, and the effect of inclining as described above is small as in the case where the bonding member is linearly coupled to the rectifying unit. . If the angle of the inclined horizontal plane exceeds 80 ° at this time, the gas flowing into the joining member from the rectifying unit collides with the wall surface of the joining member, generating turbulence, and the gas distribution becomes dense. The rectifying effect is lost and the velocity distribution is disturbed in the space above the wafer.
さらに、前記整流部材の内部空間でガスの流れを整流するための仕切り板（図２の１１）がガス流とほぼ平行に設けられている。仕切り板の数は整流部（図１の５）の幅に応じて１〜数枚が望ましい。 Furthermore, a partition plate (11 in FIG. 2) for rectifying the gas flow in the internal space of the rectifying member is provided substantially parallel to the gas flow. The number of partition plates is preferably 1 to several depending on the width of the rectifying unit (5 in FIG. 1).
前記整流部材内部に、原料ガスまたはキャリアガスの流れにほぼ垂直な壁面である衝突壁（図３の１０）を整流部材（図３の５）の内部の下面に、設けることによって、原料ガスまたはキャリアガスの流れを前記整流部材下面でさえぎり、上面の隙間を通すべく衝突による拡散効果と狭い隙間を通ることによる整流効果で原料の流れが均一化され、エピタキシャル成長膜厚の均一性を良くする。このときの隙間は衝突壁の無い整流部分の内部断面積の１６％から８４％が望ましい。
このとき隙間の内部断面積が１６％未満だと壁面による拡散効果がない。またこのとき隙間の内部断面積が８４％を超えると狭い隙間を通ることによる整流効果がない。また、衝突壁を下面でなく上面に設けても同様の効果がある。
By providing a collision wall (10 in FIG. 3), which is a wall surface substantially perpendicular to the flow of the source gas or carrier gas, on the lower surface inside the rectification member (5 in FIG. 3), The flow of the carrier gas is blocked by the lower surface of the flow straightening member, and the flow of the raw material is made uniform by the diffusion effect due to collision and the flow straightening effect by passing through the narrow gap so as to pass through the gap on the upper face, thereby improving the uniformity of the epitaxially grown film thickness. The gap at this time is desirably 16% to 84% of the internal cross-sectional area of the rectifying portion having no collision wall.
At this time, if the internal cross-sectional area of the gap is less than 16%, there is no diffusion effect due to the wall surface. At this time, if the internal cross-sectional area of the gap exceeds 84%, there is no rectifying effect due to passing through the narrow gap. The same effect can be obtained by providing the collision wall on the upper surface instead of the lower surface.
前記接合部材の形状を傾斜型にすること、前記整流部材の内部に前記仕切り板を設けることおよび前記整流部材の内部に前記衝突壁を設けることを組み合わせることにより更に流入ガスの流速がより均一化しエピタキシャル成長膜厚の均一性を良くする。 By combining the shape of the joining member with an inclined type, providing the partition plate inside the rectifying member, and providing the collision wall inside the rectifying member, the flow rate of the inflowing gas can be made more uniform. Improves uniformity of epitaxial growth film thickness.
本発明によれば、整流部材内（図３の５）のガス下流に位置する接合部材（図３の８）の傾斜化および衝突壁（図３の１０）において、原料ガスまたはキャリアガスの流速を、ウェーハ上部空間で均一にできるので、エピタキシャル層の膜厚に局所的な凹凸が生じるのを抑制することができ、ほぼ均一な膜厚分布を持つエピタキシャル層を形成することができる。その結果、ウェーハの平坦度を向上させることができ、高集積度の半導体デバイスの製造に適したものとなる。 According to the present invention, the flow rate of the source gas or the carrier gas at the inclination of the joining member (8 in FIG. 3) and the collision wall (10 in FIG. 3) located downstream of the gas in the rectifying member (5 in FIG. 3). Can be made uniform in the upper space of the wafer, so that local unevenness in the film thickness of the epitaxial layer can be suppressed, and an epitaxial layer having a substantially uniform film thickness distribution can be formed. As a result, the flatness of the wafer can be improved, which is suitable for manufacturing a highly integrated semiconductor device.
また、図１、図２に示すように、ガス流出口をウェーハ外周からほぼ等距離になるよう円弧状に湾曲させることも有効である。これは、ガス流出口からウェーハ外周部までの距離がほぼ等しくなるため、ウェーハ各部を流れるガス流速の差が小さくなりエピタキシャル成長膜厚の均一性が良くなるのである。 Further, as shown in FIGS. 1 and 2, it is also effective to curve the gas outlet in an arc shape so as to be substantially equidistant from the outer periphery of the wafer. This is because the distance from the gas outlet to the outer peripheral portion of the wafer becomes substantially equal, so that the difference in the gas flow velocity flowing through each portion of the wafer is reduced and the uniformity of the epitaxial growth film thickness is improved.
また、エピタキシャル成長膜厚の均一性を良くするためには、ガスの流れを均一かつスムースにすることが必要でなので、そのため接合部材（図２の８）をガス流出口（図２の１２）と同心円の円弧を持ち前記ガス流出口を外周から囲む形状とすることも有効である。このときの前記接合部材の角度とは図２のＡ−Ａ断面すなわち図３において整流部材の底面と前記接合部材のなす角度である。
さらに、整流部材（図３の５）、接合部材（図３の８）およびガス流出口（図３の１２）の接続部を、なめらかな曲面で結合することも、ガスの流れをスムースにするため有効である。
Further, in order to improve the uniformity of the epitaxially grown film thickness, it is necessary to make the gas flow uniform and smooth. Therefore, the joining member (8 in FIG. 2) is connected to the gas outlet (12 in FIG. 2). It is also effective to have a concentric circular arc shape that surrounds the gas outlet from the outer periphery. The angle of the joining member at this time is an angle formed by the joining member in FIG.
Furthermore, the flow of gas can be made smooth by connecting the connecting portions of the flow regulating member (5 in FIG. 3), the joining member (8 in FIG. 3) and the gas outlet (12 in FIG. 3) with a smooth curved surface. Therefore, it is effective.
接合部材（図３の８）を傾斜化する。このときの前記接合部材の角度は２０°〜８０°であり、整流部材（図３の５）の下面からガス流出口（図３の１２）の下面までの段差は１６ｍｍである。また前記整流部材の内部空間でガスの流れを整流するための仕切り板（図２の１１）が設けられている。かつ前記整流部内に衝突壁（図３の１０）を整流部の下部から設けた構造にする。そのとき衝突壁１０の最上部と前記整流部材の上面内壁との隙間は均一であり、前記整流部材内部空間の高さは１２．０ｍｍであり、また当該隙間は、２〜１０ｍｍである。本構造の前記整流部材を使用すること、および、図１、図２に示すように、ガス流出口をウェーハ外周からほぼ等距離になるよう円弧状に湾曲させることにより、ガス流出口からウェーハ外周部までの距離がほぼ等しくなるため、ウェーハ上のガス流速の差が小さくなる。
さらに、エピタキシャル成長膜厚の均一性を良くするためには、ガスの流れを均一かつスムースにすることが必要なので、そのため接合部材（図２の８）をガス流出口（図３の１０）と同心円の円弧を持ち前記ガス流出口を外周から囲む形状とすることも有効である。このときの前記接合部材の角度とは図２のＡ−Ａ断面すなわち図３において整流部材の底面と前記接合部材のなす角度である。
さらに、整流部材（図３の５）、接合部材（図３の８）およびガス流出口（図３の１２）の接続部を、なめらかな曲面で結合することも、ガスの流れをスムースにするため有効である。以上により、最良の結果が得られる。
The joining member (8 in FIG. 3) is inclined. The angle of the joining member at this time is 20 ° to 80 °, and the step from the lower surface of the rectifying member (5 in FIG. 3) to the lower surface of the gas outlet (12 in FIG. 3) is 16 mm. Further, a partition plate (11 in FIG. 2) for rectifying the gas flow in the internal space of the rectifying member is provided. Further, a collision wall (10 in FIG. 3) is provided in the rectifying unit from the lower part of the rectifying unit. At that time, the gap between the uppermost part of the
Furthermore, in order to improve the uniformity of the epitaxially grown film thickness, it is necessary to make the gas flow uniform and smooth. Therefore, the joining member (8 in FIG. 2) is concentric with the gas outlet (10 in FIG. 3). It is also effective to have a shape surrounding the gas outlet from the outer periphery. The angle of the joining member at this time is an angle formed by the joining member in FIG.
Furthermore, the flow of gas can be made smooth by connecting the connecting portions of the flow regulating member (5 in FIG. 3), the joining member (8 in FIG. 3) and the gas outlet (12 in FIG. 3) with a smooth curved surface. Therefore, it is effective. Thus, the best result is obtained.
本発明の実施例（１）と比較例（２）を示す。
（１）整流部材（図３の５）とガス流出口（図３の１２）に段差をつける為、接合部（図３の８）を傾斜化し、整流部材（図３の５）内に高さ７．０ｍｍの衝突壁（図３の１０）を設けた図３で示す本発明の構造。かつ整流部材の内部の内部空間でガスの流れを整流するための仕切り板（図２の１１）が設けられている。さらに、図１、図２に示すように、ガス流出口をウェーハ外周からほぼ等距離になるよう円弧状に湾曲させる。かつ、接合部材（図２の８）を前記ガス流出口と同心円の円弧を持ち前記ガス流出口を外周から囲む形状とする。このときの前記接合部材の角度とは図２のＡ−Ａ断面すなわち図３において整流部材の底面と前記接合部材のなす角度である。このときの角度は４５°である。
（２）整流部材（図３の５）とガス流出口（図３の１２）に段差をつけない為、接合部（図３の８）に傾斜が存在せず、接合部が水平であり、ガスが整流部からウェーハ上面まで直接流れ、かつ整流部材（図３の５）内に衝突壁（図３の１０）を設けない従来構造。ただし整流部材の内部の内部空間でガスの流れを整流するための仕切り板（図２の１１）が設けられている。さらに、ガス流出口をウェーハ外周からほぼ等距離になるよう円弧状に湾曲させる。
この際、整流部材の数、原料ガスおよびキャリアガス流量、サセプター回転速度、温度など上記（１）および（２）に記述しないエピ条件は同じにした。以上のように同一条件でエピタキシャル成長した場合のエピ厚さ分布を図５に（１）、図６に（２）の測定結果を示す。本発明によれば、図５に示すようにウェーハ面上の膜厚の増加・減少領域がなくなり、膜厚の均一性が良くなっていることが明らかである。（２）の従来構造においては、図６に示すように、ウェーハ中心から±３０ｍｍの位置に局所的なエピタキシャル膜厚増加領域、±８０ｍｍの位置に膜厚減少領域が存在している。この結果から本発明のエピタキシャル成長装置の構成によってウエーハの平坦度が大幅に改善されることが実証された。
Examples (1) and Comparative Example (2) of the present invention are shown.
(1) In order to make a step between the rectifying member (5 in FIG. 3) and the gas outlet (12 in FIG. 3), the joint (8 in FIG. 3) is inclined, and the rectifying member (5 in FIG. 3) 3. The structure of the present invention shown in FIG. 3 provided with a 7.0 mm collision wall (10 in FIG. 3). And the partition plate (11 of FIG. 2) for rectifying | straightening the flow of gas in the internal space inside a rectification | straightening member is provided. Further, as shown in FIGS. 1 and 2, the gas outlet is curved in an arc shape so as to be substantially equidistant from the outer periphery of the wafer. The joining member (8 in FIG. 2) has a circular arc concentric with the gas outlet and surrounds the gas outlet from the outer periphery. The angle of the joining member at this time is an angle formed by the joining member in FIG. The angle at this time is 45 °.
(2) Since there is no step between the flow regulating member (5 in FIG. 3) and the gas outlet (12 in FIG. 3), there is no inclination in the joint (8 in FIG. 3), and the joint is horizontal, A conventional structure in which gas flows directly from the rectifying unit to the upper surface of the wafer, and no collision wall (10 in FIG. 3) is provided in the rectifying member (5 in FIG. 3). However, a partition plate (11 in FIG. 2) for rectifying the gas flow in the internal space inside the rectifying member is provided. Further, the gas outlet is curved in an arc shape so as to be approximately equidistant from the outer periphery of the wafer.
At this time, the epi conditions not described in the above (1) and (2), such as the number of rectifying members, the flow rates of the source gas and the carrier gas, the susceptor rotation speed, and the temperature, were the same. As described above, the epitaxial thickness distribution in the case of epitaxial growth under the same conditions is shown in FIG. 5 (1) and FIG. 6 (2). According to the present invention, as shown in FIG. 5, it is clear that there is no increase / decrease region of the film thickness on the wafer surface, and the film thickness uniformity is improved. In the conventional structure of (2), as shown in FIG. 6, there is a local epitaxial film thickness increasing region at a position ± 30 mm from the wafer center and a film thickness decreasing region at a position ± 80 mm. From this result, it was demonstrated that the flatness of the wafer is greatly improved by the configuration of the epitaxial growth apparatus of the present invention.
なお、本発明の技術範囲は上記実施の形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲において種々の変更を加えることが可能である。例えば整流部材の数、形状等の具体的な構成に関しては、適宜変更が可能である。そして、本発明は上記実施の形態の枚葉式エピ炉の場合に限らず、ウェーハの表面に対して側方からガスを供給するタイプの他のエピタキシャル成長装置にも適用が可能である。また、上記実施の形態ではシリコンウェーハの例を説明したが、本発明はその他の半導体ウェーハにも適用可能である。 The technical scope of the present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, the specific configuration such as the number and shape of the rectifying members can be appropriately changed. The present invention is not limited to the single-wafer type epi-furnace of the above embodiment, but can be applied to other epitaxial growth apparatuses of a type that supplies gas from the side to the surface of the wafer. Moreover, although the example of the silicon wafer has been described in the above embodiment, the present invention can be applied to other semiconductor wafers.
１ エピタキシャル成長装置
２ チャンバー
３ ガス供給源
４ 配管
５ 整流部材
６ サセプター
７ ウェーハ
８ 接合部材
９ バッフル孔
１０ 衝突壁
１１ 仕切り板
１２ ガス流出口
DESCRIPTION OF SYMBOLS 1
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250628A (en) * | 2006-03-14 | 2007-09-27 | Uv Craftory Co Ltd | Chemical vapor deposition apparatus and gas flow path apparatus |
| JP2007311660A (en) * | 2006-05-19 | 2007-11-29 | Toyoda Gosei Co Ltd | Gas supplying nozzle and semiconductor manufacturing equipment using it |
| JP2009127100A (en) * | 2007-11-26 | 2009-06-11 | Ulvac Japan Ltd | Deposition equipment |
| JP2012146697A (en) * | 2011-01-06 | 2012-08-02 | Shin Etsu Handotai Co Ltd | Manufacturing apparatus and manufacturing method of epitaxial wafer |
| WO2014045779A1 (en) * | 2012-09-20 | 2014-03-27 | 信越半導体株式会社 | Vapor phase growth device and method for manufacturing epitaxial wafer |
| CN109338464A (en) * | 2018-11-09 | 2019-02-15 | 浙江求是半导体设备有限公司 | A gas injection device for epitaxial growth system |
| CN115487755A (en) * | 2017-05-17 | 2022-12-20 | 巴塞尔聚烯烃股份有限公司 | Fluidized bed reactor with multiple recycle gas inlet nozzles |
| US12139790B2 (en) | 2019-09-09 | 2024-11-12 | Applied Materials, Inc. | Processing system and method of delivering a reactant gas |
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2003
- 2003-08-21 JP JP2003297116A patent/JP4320574B2/en not_active Expired - Lifetime
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007250628A (en) * | 2006-03-14 | 2007-09-27 | Uv Craftory Co Ltd | Chemical vapor deposition apparatus and gas flow path apparatus |
| JP2007311660A (en) * | 2006-05-19 | 2007-11-29 | Toyoda Gosei Co Ltd | Gas supplying nozzle and semiconductor manufacturing equipment using it |
| JP2009127100A (en) * | 2007-11-26 | 2009-06-11 | Ulvac Japan Ltd | Deposition equipment |
| JP2012146697A (en) * | 2011-01-06 | 2012-08-02 | Shin Etsu Handotai Co Ltd | Manufacturing apparatus and manufacturing method of epitaxial wafer |
| WO2014045779A1 (en) * | 2012-09-20 | 2014-03-27 | 信越半導体株式会社 | Vapor phase growth device and method for manufacturing epitaxial wafer |
| JP2014063855A (en) * | 2012-09-20 | 2014-04-10 | Shin Etsu Handotai Co Ltd | Vapor phase epitaxy device and epitaxial wafer manufacturing method |
| CN115487755A (en) * | 2017-05-17 | 2022-12-20 | 巴塞尔聚烯烃股份有限公司 | Fluidized bed reactor with multiple recycle gas inlet nozzles |
| CN115487755B (en) * | 2017-05-17 | 2024-01-26 | 巴塞尔聚烯烃股份有限公司 | Fluidized bed reactor with multiple recycle gas inlet nozzles |
| CN109338464A (en) * | 2018-11-09 | 2019-02-15 | 浙江求是半导体设备有限公司 | A gas injection device for epitaxial growth system |
| US12139790B2 (en) | 2019-09-09 | 2024-11-12 | Applied Materials, Inc. | Processing system and method of delivering a reactant gas |
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