JP2005040665A - Method and apparatus for forming pattern - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for forming a pattern which does not need a mask, can correspond flexibly to the change of the shape of a wiring pattern, needs only a short pattern forming time, can keep costs low, is hardly affected by dust and the surface state of an insulating substrate, saves a solution in an application process, and can form a three-dimensional pattern layer and an apparatus for the method. <P>SOLUTION: A three-dimensional partition wall 12 surrounding a prescribed area is formed by discharging the droplets of the insulator forming solution on the insulating substrate 10. A pattern layer precursor 13 is formed by discharging the droplets of a conductor forming liquid containing conductive particles in a recessed pattern layer forming area 14 formed by being surrounded with the partition wall 12. Conductivity development treatment is applied to the precursor 13 to form a pattern layer 16 which is a conductor layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a pattern forming method for forming a pattern layer composed of a conductor layer such as a wiring pattern on an insulating substrate, and more particularly to a pattern forming method and a pattern formation capable of forming a pattern layer having a three-dimensional structure. Relates to the device.
[0002]
[Prior art]
Conventionally, as a method of forming a so-called three-dimensional wiring pattern having a three-dimensional structure, a pattern having a three-dimensional structure is obtained by repeating three steps of a dielectric film forming process, a photolithography process, and a plating process. A method of forming a layer (three-dimensional wiring pattern) is known. However, this method requires a precise operation of mask alignment every time a plurality of pattern layers constituting a three-dimensional structure are formed, and therefore requires a high level of technology and is necessary for forming a pattern layer. There is a problem that time becomes long. Further, it is necessary to newly manufacture an expensive mask every time the pattern shape of the wiring pattern formed on the insulating substrate is changed, and there is a problem that the cost is increased.
[0003]
Also, in the photolithography process, a droplet of the photosensitive resin solution is dropped near the center of the insulating substrate rotated at high speed around a rotation axis perpendicular to the horizontal plane, and is insulated by spreading it toward the outer edge of the insulating substrate by centrifugal force. A spin coating method is widely used in which the surface of the photosensitive substrate is covered with a thin film of a photosensitive resin solution and the excess photosensitive resin solution is scattered and discharged to the outside of the insulating substrate. However, in this spin coating method, when the insulating substrate is rotated at a high speed, most of the photosensitive resin solution is scattered outside the insulating substrate without covering the surface of the insulating substrate. The amount of the photosensitive resin solution used for coating is small compared to the amount of the scattered photosensitive resin solution, and the amount is wasted.
[0004]
Furthermore, since the surface of the insulating substrate is rotated at a high speed while being wetted with the photosensitive resin solution, dust tends to adhere to the surface of the wet insulating substrate. When dust adheres to the surface of the insulating substrate, the portion where the dust adheres rises when the liquid organic material is applied on the surface of the insulating substrate in the subsequent process. Since a shadow is formed, there is a problem in that a relatively thin radial trace of the organic material remains behind the raised portion and a pattern defect occurs.
[0005]
In order to solve the above problems, various methods for forming a wiring pattern using an ink jet technique have been proposed. For example, on the surface of the insulating substrate, an affinity region having an affinity for a conductor forming liquid containing conductive fine particles and a non-affinity region having no affinity for the conductor forming liquid in advance. A method of forming a regular repeating pattern such as a check pattern and discharging a conductor forming liquid onto the surface of the insulating substrate (see, for example, Patent Document 1), or an organic substance on the surface of the insulating substrate. Affinity regions and non-affinity regions are formed in a regular repeating pattern using a molecular film, and after applying a solution in which conductive fine particles are dispersed, a heat treatment is applied to conduct the conductive fine particle solution. There has been proposed a method of converting into a film having a property (for example, see Patent Document 2).
[0006]
[Patent Document 1]
JP-A-11-207959
[Patent Document 2]
JP 2002-164635 A
[0007]
[Problems to be solved by the invention]
However, in the methods described in Patent Document 1 and Patent Document 2, it is necessary to form an affinity region and a non-affinity region for the conductor forming liquid in a predetermined repeated pattern on the surface of the insulating substrate. Therefore, it takes time and cost to process the insulating substrate, and there is a problem that the time required for forming the pattern layer becomes long and the cost rises as well as the problem for lithography. In addition, a process of forming an insulating film and a process of processing the insulating film are required to form a pattern layer (three-dimensional wiring pattern) having a three-dimensional structure. There is a problem that time is increased and technical difficulty is increased. Furthermore, since it is necessary to discharge the solution such as the conductor forming liquid over a region having a larger area than the region where the pattern layer is to be formed, there is also a problem that the amount of the wasted solution is large.
[0008]
In view of the above-described conventional problems, the present invention does not require a mask, can flexibly cope with a change in the pattern shape of a wiring pattern, has a short time required to form a pattern layer, can reduce costs, and is free from dust and insulation. The present invention provides a pattern forming method and a pattern forming apparatus that can form a pattern layer (three-dimensional wiring pattern) having a three-dimensional structure that is not easily affected by the surface state of a conductive substrate, has a low ratio of waste of solution in a coating process. Objective.
[0009]
[Means for Solving the Problems]
In order to solve the above-mentioned problem, the pattern forming method of the present invention is characterized in that the three-dimensional barrier rib is formed on the insulating substrate by discharging a droplet of the insulator-forming solution to surround a predetermined area. A step of forming a concave pattern layer forming region surrounded by, a step of discharging a droplet of a conductor forming liquid containing conductive particles to the pattern layer forming region to form a pattern layer precursor, and The pattern layer precursor is subjected to conductivity development treatment to obtain a patterned layer having conductivity.
[0010]
Here, the droplet of the insulator forming solution is preferably discharged from a liquid discharge head using electrostatic force.
[0011]
The conductor forming liquid droplets are preferably ejected from a thermal liquid ejection head or a liquid ejection head utilizing a piezoelectric effect.
[0012]
In addition, after the step of obtaining the conductivity expression process to obtain the pattern layer having conductivity, the droplets of the insulator forming solution are ejected onto a part of the surface of the pattern layer to thereby remove the surface of the pattern layer. You may further have the process of forming a protective layer in part.
[0013]
Moreover, it is preferable that the said electrical conductivity expression process is a process which heats the said pattern layer precursor, or a process which irradiates a laser to the said pattern layer precursor.
[0014]
In addition, a step of forming a concave pattern layer forming region surrounded by the three-dimensional partition wall, a step of forming the pattern layer precursor, and a conductivity expression treatment is performed on the pattern layer precursor to provide conductivity. By repeating the step of obtaining a pattern layer, the pattern layer may be laminated to form a three-dimensional pattern on the insulating substrate. Here, “stacking pattern layers” means that two pattern layers are stacked in direct contact with each other and electrically connected, and two insulating layers are interposed between the two pattern layers. It includes both cases where the pattern layers are separated and stacked in an electrically insulated state.
[0015]
The insulator forming solution and the conductor forming liquid droplets are preferably discharged from a liquid discharge head based on the layout of the pattern layer.
[0016]
Moreover, it is preferable to perform the process of giving the electroconductivity expression process to the said pattern layer precursor, and obtaining the pattern layer provided with electroconductivity in inert gas atmosphere.
[0017]
A pattern forming apparatus of the present invention includes a first liquid discharge head that discharges an insulator forming solution using electrostatic force, a second liquid discharge head that discharges a conductor forming liquid containing conductive particles, and a base Means for performing conductivity development processing on an insulating substrate set on a table, and scanning by moving the first liquid discharge head and the second liquid discharge head relative to the insulating substrate The scanning means is operated based on layout information of a pattern layer to be formed and a protective layer covering a part of the surface of the pattern layer, and the first liquid ejection head and the second liquid And control means for discharging droplets from the discharge head.
[0018]
Here, the means for performing the conductivity development process may be at least one of a means for heating the insulating substrate and a means for irradiating the insulating substrate with a laser.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
(First embodiment)
The pattern forming method according to the first embodiment of the present invention will be described below. FIG. 1 is a perspective view showing a manufacturing procedure of a pattern forming method according to the first embodiment of the present invention, and FIG. 2 is a cross-sectional view showing a manufacturing procedure of the pattern forming method according to the first embodiment of the present invention. is there. Each of the cross sections of FIGS. 2A to 2D is a vertical cross section obtained by cutting the insulating substrate 10 in the thickness direction along a plane passing through the line AA illustrated in FIG. The pattern layer described below will be described by taking as an example the case of forming using a fully automatic pattern forming apparatus described later. However, the pattern layer is formed by discharging a droplet of a conductor forming liquid onto an insulating substrate. The pattern layer may be partially manually formed. Here, the pattern layer is a broad concept including a wiring pattern, a conductor pattern, an electric circuit, an electronic circuit, a semiconductor integrated circuit, and the like. As will be described later, by changing the thickness and shape of the pattern layer, a resistor or a capacitor It is also possible to build a passive element such as the inside of an insulating substrate.
[0020]
In the present embodiment, a case where a pattern layer composed of a rectangular thin plate-like conductor layer such as a wiring pattern is formed on an insulating substrate will be described. In order to form a pattern layer according to the pattern forming method according to the present embodiment, first, as shown in FIGS. 1A and 2A, a predetermined region on the surface of the insulating substrate 10, specifically, A three-dimensional partition wall 12 is formed by discharging a droplet of the insulator forming solution to a portion surrounding the periphery of the region where the pattern layer is to be formed. Then, by forming the three-dimensional partition wall 12, a concave pattern layer forming region 14 surrounded by the three-dimensional partition wall 12 is formed.
[0021]
That is, the droplet of the insulator forming solution is not discharged to the region where the pattern layer is to be formed, and the droplet of the insulator forming solution is discharged to the portion surrounding the periphery of the region where the pattern layer is to be formed. The embankment-shaped three-dimensional partition wall 12 surrounding the outer edge of the region where the pattern layer is to be formed is formed. The area surrounded by the embankment-shaped three-dimensional partition wall 12, that is, the inner wall surface of the three-dimensional partition wall 12, and the region where the pattern layer is to be formed (the surface of the insulating substrate 10) is a region whose section is recessed in a substantially “U” shape That is, the pattern layer forming region 14 is formed.
[0022]
As a method of forming the three-dimensional partition wall 12, it is preferable to discharge droplets of a resin solution obtained by diluting an insulating material such as polyimide resin with an organic solvent. For example, as shown in FIG. 2 (A), the three-dimensional barrier ribs 12 with an interval t of 10 to 50 μm are formed on the surface of the insulating substrate 10. The three-dimensional partition wall 12 typically has a height of 1 μm to several tens of μm. The discharge amount of the liquid discharge head is about 5 picoliters per discharge, and the height can be increased by repeating discharge to form a higher three-dimensional partition wall 12.
[0023]
Here, examples of the insulating substrate 10 used in the present invention include the following materials. SiO ₂ , ZrO ₂ , Al ₂ O ₃ Ceramic materials such as polyester, aromatic polyamide and polyimide, glass fibers and polyester fibers, aromatic polyamide fibers and nonwoven fabrics impregnated with a thermoplastic resin and an epoxy resin and cured.
[0024]
Moreover, as a method of discharging the insulator forming solution, for example, a method of discharging using a liquid discharge head can be given. Among the liquid discharge heads, it is preferable to use a liquid discharge head using electrostatic force. When discharging an insulator forming solution using a liquid discharge head that uses electrostatic force, the accuracy of the position where droplets of the discharged insulator forming solution are attached is high. Alignment operation that can be formed and aligns the position of the nozzle of the liquid discharge head by setting the insulating substrate on the base of the pattern forming apparatus is performed once as long as the insulating substrate is not removed from the base. This is because there is an advantage that it is not necessary to perform it twice or more. As a liquid discharge head for discharging an insulator-forming solution containing polyimide as an insulating material, for example, an inkjet head using electrostatic force described in Japanese Patent No. 3315334 can be used.
[0025]
Examples of the insulator forming solution discharged to form the three-dimensional partition wall 12 include a solution in which an insulating material is dissolved in the solvent. An example of the insulating material that dissolves in the insulator forming solution is polyimide. Examples of insulating materials other than polyimide include the following materials. A phenol epoxy resin or the like can be used.
[0026]
The solvent in the insulator forming solution is not particularly limited as long as it dissolves the insulating material.
[0027]
Next, as shown in FIG. 1B and FIG. 2B, a pattern layer is formed by discharging liquid droplets containing conductive particles as a conductor forming liquid into the pattern layer forming region 14. Supply into the region 14 to form the pattern layer precursor 13.
[0028]
Examples of the method for discharging the conductor forming liquid include a method for discharging using a liquid discharge head. Among the liquid discharge heads, it is preferable to use a thermal type liquid discharge head that generates bubbles by the heat generated by the heater and discharges the liquid by the expansion force of the bubbles, or a piezo type liquid discharge head that discharges liquid using the piezoelectric effect. . As an apparatus for ejecting droplets of a solution containing a metal as conductive particles, for example, a piezo-type ink jet head described in Japanese Patent Publication No. 2-51734 can be used. Note that since the conductivity of the conductor forming liquid is high, the above-described liquid discharge head using the electrostatic force cannot be used.
[0029]
The conductor forming liquid is discharged into the pattern layer forming region 14 to form a pattern layer precursor, and then the pattern layer precursor is subjected to a conductivity developing treatment to develop conductivity, thereby providing conductivity. A liquid that is converted into a pattern layer having, for example, a liquid in which conductive particles such as copper fine particles are dissolved or dispersed in a solvent.
[0030]
The conductive particles contained in the conductor forming liquid are not particularly limited as long as they can exhibit conductivity and form a pattern layer after the conductive expression treatment described later. For example, the following materials can be mentioned. Examples thereof include gold, silver, copper, nickel, palladium, Cr, Zn, Co, Mo, Ru, W, Fe, Mn, Sn, and In.
[0031]
Next, a conductive expression treatment is performed on the pattern layer precursor 13 formed as described above. This conductivity development process is a process performed to cause the pattern layer precursor 13 formed in the pattern layer formation region 14 to exhibit conductivity and to be converted into a pattern layer. Examples of the conductive expression treatment include a method of heating the pattern layer precursor 13 and a method of irradiating the pattern layer precursor 13 with a laser.
[0032]
By performing the conductivity development process, conductivity is developed in the pattern layer precursor 13 to form a conductor layer, that is, the pattern layer 16. In order to increase the thickness of the pattern layer 16, the discharge of the conductor forming liquid and the conductive expression treatment may be alternately performed a plurality of times. By this method, a rectangular thin plate-like pattern layer 16 that electrically connects two points on the same plane can be formed. A pattern layer having a three-dimensional structure, that is, a three-dimensional wiring pattern, can be formed by combining such pattern layers 16.
[0033]
Next, the case where a protective layer is added to the upper surface of the pattern layer 16 formed as described above will be described. In order to add a protective layer to the upper surface of the pattern layer 16, as shown in FIGS. 1D and 2D, only a portion necessary for soldering as an electrode remains on the upper surface of the pattern layer 16. In addition, using a liquid discharge head that utilizes electrostatic force, for example, droplets of an insulator-forming solution obtained by diluting an insulating material such as polyimide with an organic solvent are discharged to form a protective layer 18 made of polyimide resin. To do. The protective layer 18 may be formed as necessary, and the protective layer 18 may be omitted.
[0034]
As described above, in the pattern forming method according to the present embodiment, a liquid discharge head capable of discharging droplets to a very narrow region is used, and a conductor is formed only on the region on the insulating substrate where the pattern layer is to be formed. Since the pattern layer 16 is formed by discharging the forming liquid, a mask used in conventional photolithography is not necessary. Further, compared to the spin coating method, the amount of the solution that is wasted in the step of applying the solution can be extremely reduced.
[0035]
Further, since the control device causes the liquid ejection head to scan the insulating substrate to form a pattern layer having a desired shape at a desired location on the insulating substrate, the control device relates to the shape of the pattern layer to be formed. A pattern layer having a desired shape can be formed simply by inputting data. Further, since the pattern layer is directly formed at a desired location on the insulating substrate, a pattern layer can be formed with a small space and a small manufacturing apparatus without requiring a large manufacturing apparatus such as a plating tank.
[0036]
In addition, when changing the pattern shape of the pattern layer to be formed, it is not necessary to create a new mask to be used in photolithography, so the pattern shape of the wiring pattern can be changed by changing the product design. Even when it is necessary to do so, it is possible to respond flexibly. Further, by using the liquid discharge head, a mask used in a photolithography process becomes unnecessary, so that the time required for forming the pattern layer can be shortened and the manufacturing cost can be kept low. Further, by using a liquid discharge head, a solution such as an insulator forming solution or a conductor forming solution is directly discharged onto a region of the surface of the insulating substrate where a three-dimensional partition wall or a pattern layer is to be formed. Therefore, there is almost no time for the surface of the insulating substrate to become wet, and there is a low possibility that dust adheres or is affected by the shape of the surface of the insulating substrate.
[0037]
Furthermore, in the pattern forming method according to the present embodiment, the pattern layer 16 is formed in the pattern layer forming region 14 that is surrounded by the three-dimensional partition formed of an insulator, so the periphery of the pattern layer 16 is an insulator. It is surrounded by the three-dimensional partition 12 formed. Therefore, even when the plurality of pattern layers 16 are close to each other to form one wiring circuit, a short circuit between the pattern layers 16 can be reliably prevented.
[0038]
Furthermore, in order to develop conductivity in the pattern layer precursor, a method of irradiating the pattern layer precursor with a laser may be used in addition to the method of heating the pattern layer precursor. Moreover, you may use both the heating of a pattern layer precursor, and the laser irradiation with respect to a pattern layer precursor. When discharging a conductor forming liquid containing a metal that easily oxidizes as the conductor forming liquid, it is preferable to perform the discharging process of the conductor forming liquid in an inert gas atmosphere. Moreover, also when heating a pattern layer precursor as one of the electroconductivity expression processes which make a pattern layer precursor express electroconductivity, it is preferable to heat a pattern layer precursor in an inert gas atmosphere. Further, the step of forming the concave pattern layer forming region 14 surrounded by the three-dimensional partition wall 12, the step of forming the pattern layer precursor 13, and the pattern layer precursor 13 are subjected to conductivity development treatment to provide conductivity. By repeating the step of obtaining the patterned layer 16, the patterned layers can be stacked to form a patterned layer having a three-dimensional structure, that is, a three-dimensional wiring pattern, in the insulating substrate.
[0039]
(Second embodiment)
Next, a pattern forming method according to the second embodiment will be described. In the present embodiment, a method for forming a pattern layer having a three-dimensional structure composed of two pattern layers that are not electrically connected and intersect three-dimensionally will be described. FIG. 3 is a perspective view showing the manufacturing procedure of the pattern forming method according to the second embodiment of the present invention, and FIG. 4 is a cross-sectional view showing the manufacturing procedure of the pattern forming method according to the second embodiment of the present invention. is there. Each of the cross sections in FIGS. 4A to 4F is a vertical cross section obtained by cutting the insulating substrate 10a in the thickness direction along a plane passing through the line AA shown in FIG.
[0040]
In order to carry out the pattern forming method according to the present embodiment, as shown in FIGS. 3A and 4A, as in the first embodiment, electrostatic discharge is performed toward the upper surface of the insulating substrate 10a. A three-dimensional partition 12a is formed by discharging a polyimide solution as an insulator forming solution from a liquid discharge head using force. As shown in FIGS. 3A and 4A, in this embodiment, the three-dimensional partition 12a corresponds to a shape in which two pattern layers intersect three-dimensionally, and three independent patterns are obtained. A three-dimensional partition wall 12a is formed so as to surround the outside of the layer forming regions 14a, 15a and 16a. After forming the three-dimensional partition wall 12a and forming the pattern layer forming regions 14a, 15a and 16a on the inside thereof, the conductor is directed from the liquid ejection head toward the pattern layer forming regions 14a, 15a and 16a as in the first embodiment. As the forming liquid, liquid droplets containing conductive particles are discharged, and the conductor forming liquid is supplied into the pattern layer forming regions 14a, 15a, and 16a to form the pattern layer precursor.
[0041]
Next, these pattern layer precursors are subjected to conductivity development treatment, for example, by heating, to obtain pattern layers 141, 151 and 161 shown in FIGS. 3B and 4B. Next, as shown in FIGS. 3 (C) and 4 (C), the polyimide resin solution is utilized using the electrostatic force while leaving the portions 151a and 151b at both ends in the longitudinal direction on the upper surface of the pattern layer 151 located at the center. The protective layer 18a is formed by discharging from the liquid discharge head. Next, a polyimide resin solution is discharged on the three-dimensional partition wall 12a and the protective layer 18a from a liquid discharge head using electrostatic force to form a three-dimensional partition wall 121 as shown in FIGS. 3D and 4D. To do.
[0042]
In the three-dimensional partition wall 121, the three-dimensional partition wall 121 is formed by discharging a polyimide resin solution in a bank shape surrounding the outside of the portions 151a and 151b at both ends of the pattern layers 141, 161, and 151. FIG. As shown in FIG. 5, the pattern layer forming regions 151c, 151d and 17a are formed by being surrounded by the three-dimensional partition wall 121. A portion 151a of the pattern layer 151 is exposed at the bottom of the pattern layer formation region 151c, and a portion 151b of the pattern layer 151 is exposed at the bottom of the pattern layer formation region 151d. Further, as shown in FIG. 3D, the pattern layers 141 and 161 are exposed at the bottoms at both ends in the longitudinal direction of the pattern layer forming region 17a, and the protective layer is formed at the bottom of the substantially central portion of the pattern layer forming region 17a. The upper surface of 18a is exposed, and as shown in FIGS. 3D and 4D, the bottom of pattern layer formation region 17a is shallow in the portion where the upper surface of protective layer 18a is exposed. .
[0043]
Next, as shown in FIG. 3E and FIG. 4E, droplets of a solution containing conductive particles as a conductor-forming liquid in the pattern layer forming regions 17a, 151c, 151d are piezo-type or thermal-type. 3 (E) and FIG. 4 (FIG. 4 (E) and FIG. 4 (B) are formed by supplying a conductor forming liquid by discharging from the liquid discharge head, forming a pattern layer precursor, and heating the pattern layer precursor, for example. Pattern layers 19 and 20 as shown in E) are formed. Further, in order to increase the thickness of the pattern layers 19 and 20, it is also possible to alternately perform the discharge of the conductor forming liquid and the heating as the conductivity development process a plurality of times.
[0044]
Next, as shown in FIGS. 3F and 4F, the polyimide resin solution is discharged by the liquid discharge head, leaving the electrode portions 20a located at both ends in the longitudinal direction of the pattern layer 20. A protective layer 21 made of polyimide resin is formed on the upper surface of the pattern layer 20. By forming the pattern layers 19 and 20 in this manner, electrical connection between any two points becomes possible. In this way, pattern layers 19 and 20 that intersect three-dimensionally, that is, three-dimensional wiring patterns are formed.
[0045]
(Third embodiment)
Next, a third embodiment of the present invention will be described. In this embodiment, two pattern layers that intersect in a cross shape when the insulating substrate is viewed in the thickness direction are formed, and these two pattern layers are electrically connected at a position that intersects three-dimensionally. An example of forming a pattern layer having a three-dimensional structure will be described. FIG. 5 is a perspective view showing a manufacturing procedure of the pattern layer forming method according to this embodiment, and FIG. 6 is a cross-sectional view showing a manufacturing procedure of the pattern layer forming method according to this embodiment. Each cross section in FIGS. 6A to 6E is a vertical cross section obtained by cutting the insulating substrate 10b in the thickness direction along a plane passing through the line AA shown in FIG.
[0046]
As shown in FIGS. 5A and 6A, a three-dimensional partition wall is formed by discharging a polyimide resin solution as an insulator forming solution from a liquid discharge head using electrostatic force to a predetermined position on the surface of the insulating substrate 10b. 5B and 6B, the pattern layer forming region 14b that can be surrounded by the three-dimensional partition 12b contains conductive particles as a conductor forming liquid from the liquid discharge head. A droplet of the solution is discharged to supply a conductor forming liquid, thereby forming a pattern layer precursor. At this time, the pattern layer forming region 14b is supplied such that the level of the conductor forming liquid is substantially the same as that of the three-dimensional partition wall 12b. The pattern layer precursor is subjected to a conductivity development process to obtain a pattern layer 16b as shown in FIGS. 5B and 6B.
[0047]
Next, the conductor forming liquid is discharged from above the insulating substrate 10b on which the pattern layer 16b is formed and the three-dimensional partition 12b, and as shown in FIGS. 5C and 6C, the pattern layer 16b and the three-dimensional A three-dimensional partition 122 is formed so as to intersect at a substantially central portion of the partition 12b, and a horizontally long pattern layer forming region 40 surrounded by the three-dimensional partition 122 is formed. The three-dimensional partition 122 is formed to be higher than the three-dimensional partition 12b.
Therefore, at the bottom of the pattern layer forming region 40, the substantially central portion in the longitudinal direction of the insulating substrate 10b, the three-dimensional partition 12b, and the pattern layer 16b is exposed. Next, a conductor forming liquid is discharged and supplied from the liquid discharge head toward the pattern layer forming region 40 and filled with the conductor forming liquid up to the height of the upper surface of the three-dimensional partition wall 122 to form a pattern layer precursor. Next, the pattern layer 42 as shown in FIG. 5 (D) and FIG. 6 (D) is obtained by subjecting this pattern layer precursor to a conductive expression treatment. Next, leaving both ends of the pattern layer 42 in the longitudinal direction, droplets of the insulator forming solution are discharged from the liquid discharge head from above the pattern layer 42 to form the protective layer 21b.
[0048]
In this way, as shown in FIGS. 5E and 6E, a pattern layer 42 in which the electrode portions 42a and 42a are exposed on the upper surfaces of both end portions in the longitudinal direction is obtained. As shown in FIG. 6E, the pattern layer 42 is electrically connected to the upper surface 161 at the substantially central portion in the longitudinal direction of the pattern layer 16b. In this way, the pattern layers 16b and 42 having a three-dimensional structure in which the two pattern layers 16b and 42 cross three-dimensionally and are electrically connected, that is, a three-dimensional wiring pattern is formed.
[0049]
As described above, according to the pattern forming method according to the present embodiment, the mask alignment is performed many times by repeating the discharge of the droplets of the insulator forming solution and the conductor forming solution and the conductive development process a plurality of times. Instead, a pattern layer having a three-dimensional structure having a three-dimensional structure can be formed.
[0050]
(Fourth embodiment)
Next, a fourth embodiment of the present invention will be described. In the present embodiment, two pattern layers intersecting in a cross shape when the insulating substrate is viewed in the thickness direction, and two pattern layers separated from each other in the thickness direction of the insulating substrate are formed, An example in which another pattern layer is formed in a portion sandwiched between these two pattern layers to form a pattern layer having a three-dimensional structure electrically connected will be described.
[0051]
FIG. 7 is a perspective view showing the manufacturing procedure of the pattern layer forming method according to the fourth embodiment of the present invention, and FIG. 8 is a cross section showing the manufacturing procedure of the pattern layer forming method according to the fourth embodiment of the present invention. FIG. 8A to 8F are vertical cross sections obtained by cutting the insulating substrate 10c in the thickness direction along a plane passing through the line AA shown in FIG. 7A. In order to form the pattern layer according to the present embodiment, first, as shown in FIGS. 7A and 8A, the insulator forming solution is applied to the insulating substrate 10c from the liquid discharge head using electrostatic force. By discharging to a predetermined position, a three-dimensional partition wall 48 is formed on the entire surface of the insulating substrate 10c. Next, as shown in FIGS. 7B and 8B, a conductor forming liquid is discharged into a pattern layer forming region 50 surrounded by the three-dimensional partition wall 48 to form a pattern layer precursor. The pattern precursor 52 is formed so as to have substantially the same height as the upper surface of the three-dimensional partition wall 48 by subjecting the layer precursor to a conductive expression treatment.
[0052]
Next, as shown in FIG. 7C and FIG. 8C, the insulator forming solution is discharged from the liquid discharge head to predetermined positions of the three-dimensional partition wall 48 and the pattern layer 52, so that a rectangular shape is formed at the center. A three-dimensional partition wall 56 in which the pattern layer forming region 54 is formed is formed so as to cover the upper surface of the three-dimensional partition wall 48, and the electrode portion 52 a of the pattern layer 52 is exposed. Next, a conductor forming solution is discharged to the pattern layer forming region 54 to form a pattern layer precursor, and the pattern layer precursor is subjected to conductivity development processing to obtain a pattern layer 57. In this way, the pattern layer 57 and the electrode portion 52a of the pattern layer 52 are electrically connected.
[0053]
Next, as shown in FIGS. 7D and 8D, the insulator-forming solution is ejected from the liquid ejection head to a predetermined position of the three-dimensional partition wall 56, whereby the line AA in FIG. When the direction is the horizontal direction, a three-dimensional partition wall 60 having a horizontally long pattern layer forming region 58 formed at the center is formed to cover the upper surface of the three-dimensional partition wall 56, and then a conductor forming liquid is discharged to the pattern layer forming region 58. Then, a pattern layer precursor is formed, and the pattern layer precursor is subjected to conductivity development treatment, whereby the pattern layer is formed in the pattern layer forming region 58 as shown in FIGS. 7 (E) and 8 (E). When 62 is formed, the pattern layer 57 and the pattern layer 62 are electrically connected, and the pattern layer 52 and the pattern layer 62 are electrically connected. Next, as shown in FIGS. 7F and 8E, the surface of the pattern layer 62 is covered with a protective layer 64 with the electrode portions 62a of the pattern layer 62 exposed. Thus, when viewed in the thickness direction of the insulating substrate 10c, the pattern layer 52, which has a three-dimensional structure composed of the pattern layers 52, 62 substantially orthogonal to each other, spaced apart in the thickness direction, and electrically connected. 62, that is, a three-dimensional wiring pattern is formed.
[0054]
(Fifth embodiment)
Next, a fifth embodiment of the present invention will be described. In the present embodiment, a method for forming a capacitor having a pair of counter electrodes extending in the planar direction of the insulating substrate inside the insulating substrate will be exemplified. FIG. 9 is a cross-sectional view of an insulating substrate incorporating a capacitor according to the fifth embodiment of the present invention. In order to form an insulating substrate with a built-in capacitor according to this embodiment, as shown in FIG. 9, the entire insulating substrate is roughly divided into five layers, and formed in order from the lower layer shown in FIG. To go.
[0055]
In other words, the three-dimensional barrier ribs 121a and 121b are formed by discharging the insulator forming solution from the liquid discharge head to a predetermined position on the upper surface of the insulating substrate 10d of the first layer (the lowermost layer shown in FIG. 9). A conductor forming liquid is discharged from the liquid discharge head to a pattern layer forming region surrounded by the partition walls 121a and 121b to form a pattern layer precursor, which is subjected to conductivity development processing to obtain pattern layers 154a and 155a.
Thus, the second layer (second layer from the bottom shown in FIG. 9) is formed. Similarly, three-dimensional barrier ribs 121c and 121d are formed on the upper surface of the second layer, pattern layers 154b and 155b are formed in a pattern layer forming region surrounded by the three-dimensional barrier ribs 121c and 121d, and a third layer ( The third layer from the bottom shown in FIG. 9 is formed. Further, three-dimensional barrier ribs 121e and 121f are formed on the upper surface of the third layer, and pattern layers 154c and 155c are formed in a pattern layer forming region surrounded by the three-dimensional barrier ribs 121e and 121f to form the fourth layer (the lower layer shown in FIG. 9). To the fourth layer). Further, a three-dimensional barrier rib 156 is formed on the upper surface of the fourth layer, a pattern layer is formed in a pattern layer forming region surrounded by the three-dimensional barrier rib 156, and electrode portions 154d and 155d are added, as shown in FIG. Such an insulating substrate 200 is obtained. In this insulating substrate 200, as shown in FIG. 9, pattern layers 154 (154a to 154d) and 155 (155a to 155d) that form a pair of counter electrodes arranged opposite to each other with the three-dimensional partition walls 121b, 121d, and 121f interposed therebetween. ), And a capacitor is constituted by the pattern layers 154 and 155 and the three-dimensional barrier ribs 121b, 121d and 121f.
[0056]
(Sixth embodiment)
Next, a sixth embodiment of the present invention will be described. In the present embodiment, a method for forming a capacitor having a pair of counter electrodes extending in the thickness direction of the insulating substrate inside the insulating substrate will be exemplified. FIG. 10 is a sectional view of an insulating substrate incorporating a capacitor according to the sixth embodiment of the present invention. In order to form the capacitor-embedded insulating substrate according to this embodiment, as shown in FIG. 10, the whole is roughly divided into seven layers, and the layers are formed and laminated in order from the lower layer in FIG.
[0057]
That is, the three-dimensional partition wall 122a is formed by discharging the insulator forming solution from the liquid discharge head to a predetermined position on the upper surface of the insulating substrate 10e constituting the first layer (the lowermost layer shown in FIG. 10). A conductor forming liquid is discharged from the liquid discharge head to a pattern layer forming region surrounded by the partition wall 122a to form a pattern layer precursor, which is subjected to conductivity development processing to obtain a pattern layer 157a. Thus, a second layer (second layer from the bottom shown in FIG. 10) is formed. Similarly, a three-dimensional partition wall 122b is formed at a predetermined position on the upper surface of the second layer, and pattern layers 157b and 157c are formed in a pattern layer forming region formed by being surrounded by the three-dimensional partition wall 122b. The third layer from the bottom shown in FIG. Further, when a three-dimensional partition wall 122c is formed at a predetermined position on the upper surface of the third layer, and pattern layers 157d, 157e and 158a are formed in a pattern layer forming region surrounded by the three-dimensional partition wall 122c, the fourth layer (the lower layer shown in FIG. To the fourth layer).
[0058]
Further, when a three-dimensional partition wall 122d is formed at a predetermined position on the upper surface of the fourth layer, and pattern layers 157f, 157g and 158b are formed in a pattern layer forming region surrounded by the three-dimensional partition wall 122d, the fifth layer (the bottom shown in FIG. 10) is formed. To the fifth layer). Further, when a three-dimensional partition wall 122e is formed at a predetermined position on the upper surface of the fifth layer, and pattern layers 158c and 157h are formed in a pattern layer forming region surrounded by the three-dimensional partition wall 122e, the sixth layer (sixth from the bottom shown in FIG. 10) is formed. A step layer) is formed. Further, a protective layer 162 is formed on the upper surface of the sixth layer, and a pattern layer is formed in a pattern layer forming region surrounded by the protective layer 162 to form electrode portions 157i and 158d, as shown in FIG. Such an insulating substrate 201 is obtained. In this insulating substrate 201, as shown in FIG. 10, a pattern layer 157 (157d, 157f) and a pattern layer 158 that constitute a pair of counter electrodes arranged to face each other with part of the three-dimensional partition walls 122c and 122d interposed therebetween. (158a, 158b) are formed, and a capacitor is constituted by the pattern layers 157 and 158, a part of the three-dimensional partition wall 122c, and a part of 122d.
[0059]
(Seventh embodiment)
Next, a seventh embodiment of the present invention will be described. In the present embodiment, a method of forming a resistor having a shape extending in the planar direction of the insulating substrate inside the insulating substrate will be exemplified. FIG. 11 is a cross-sectional view of an insulating substrate with a built-in resistor according to the seventh embodiment of the present invention. In order to form the resistance built-in type insulating substrate according to the present embodiment, as shown in FIG. 11, the entire insulating substrate is roughly divided into five layers and formed in order from the lower layer in FIG. Go.
[0060]
That is, an insulator forming solution is discharged from a liquid discharge head using electrostatic force to a predetermined position on the upper surface of the insulating substrate 10f as the first layer (the lowermost layer shown in FIG. 11), and the three-dimensional partition wall 123a and 124a is formed, and a pattern formation precursor is formed by discharging a conductor forming liquid from a liquid discharge head to a pattern layer forming region surrounded by the three-dimensional barrier ribs 123a and 124a. 164a and 164b are obtained. Thus, the second layer (second layer from the bottom shown in FIG. 11) is formed. Similarly, a three-dimensional partition wall 123b is formed on the upper surface of the second layer, a pattern layer 164c is formed in a pattern layer forming region surrounded by the three-dimensional partition wall 123b, and a third layer (the lower layer shown in FIG. 11) is formed thereon. To the third layer). Further, the three-dimensional barrier ribs 123c and 124b are formed on the upper surface of the third layer, and the pattern layers 164d and 164e are formed in the pattern layer forming region surrounded by the three-dimensional barrier ribs 123c and 124b, and the fourth layer (the lower layer shown in FIG. 11). To the fourth layer).
[0061]
Next, a three-dimensional partition wall 170 as a protective layer is further formed on the upper surface of the fourth layer, and a pattern layer is formed in a pattern layer forming region surrounded by the three-dimensional partition wall 170 to form electrode portions 164f and 164g. As a result, an insulating substrate 202 with a built-in resistor 168 as shown in FIG. 11 is obtained. In this insulating substrate 202, as shown in FIG. 11, a pattern layer 164c sandwiched between the three-dimensional barrier ribs 124a and 124b is formed, and the portion of the pattern layer 164c sandwiched between the three-dimensional barrier ribs 124a and 124b serves as the resistor 168. Function. The resistance value of the resistor 168 can be adjusted by adjusting the thickness of the pattern layer 164c.
[0062]
(Eighth embodiment)
Next, an eighth embodiment of the present invention will be described. In this embodiment, a method of forming a resistor having a shape extending in the thickness direction of the insulating substrate inside the insulating substrate will be exemplified. FIG. 12 is a cross-sectional view of an insulating substrate incorporating a resistor according to the eighth embodiment of the present invention. In order to form the resistor according to the present embodiment, as shown in FIG. 12, the entire insulating substrate is roughly divided into four layers and formed in order from the lower layer in FIG.
[0063]
That is, a three-dimensional partition 125a is formed by discharging an insulator forming solution from a liquid discharge head to a predetermined position on the upper surface of the insulating substrate 10g as the first layer (the lowest layer shown in FIG. 12). A conductor forming liquid is discharged from the liquid discharge head to a pattern layer forming region surrounded by 125a to form a pattern layer precursor, which is subjected to conductivity development processing to obtain a pattern layer 172a. Thus, the second layer (second layer from the bottom shown in FIG. 12) is formed. Similarly, three-dimensional barrier ribs 125b, 125c, and 125d are formed on the upper surface of the second layer, and a pattern layer 172c is formed in a pattern layer forming region that is surrounded by the three-dimensional barrier ribs 125b and 125c. Then, the pattern layer 172b is formed in the pattern layer formation region that is formed, and the third layer (the third layer from the bottom shown in FIG. 12) is formed thereon.
[0064]
Next, a three-dimensional barrier rib 178 as a protective layer is further formed on the upper surface of the third layer, and a pattern layer is formed in a pattern layer forming region surrounded by the three-dimensional barrier rib 178 to form electrode portions 172d and 172e. Thus, the insulating substrate 203 as shown in FIG. 12 is obtained. In this insulating substrate 203, the pattern layer 172b surrounded by the three-dimensional partition walls 125c and 125d and having a narrow width functions as the resistor 176. The resistance value of the resistor 176 can be adjusted by adjusting the width of the pattern layer forming region formed between the three-dimensional barrier 125c and the three-dimensional barrier 125d.
[0065]
(Ninth embodiment)
Next, a ninth embodiment of the present invention will be described. In this embodiment, a method for forming a coil on a plane orthogonal to the surface of the insulating substrate inside the insulating substrate will be exemplified. FIG. 13 is a cross-sectional view of an insulating substrate containing a coil according to the ninth embodiment of the present invention. In order to form the resistor according to the present embodiment, as shown in FIG. 13, the entire insulating substrate is roughly divided into ten layers and formed in order from the lower layer shown in FIG.
[0066]
That is, the three-dimensional partition wall 126a is formed by discharging the insulator forming solution from the liquid discharge head to a predetermined position on the upper surface of the insulating substrate 10h as the first layer (the lowermost layer shown in FIG. 13). A pattern formation precursor is formed by discharging a conductor forming liquid from a liquid discharge head to a pattern layer forming region surrounded by 126a, and a patterning layer 180a is obtained by subjecting it to a conductive expression treatment. Thus, the second layer (second layer from the bottom shown in FIG. 13) is formed. Similarly, a three-dimensional partition wall 126b is formed on the upper surface of the second layer, and pattern layers 180b and 180c are formed in a pattern layer forming region surrounded by the three-dimensional partition wall 126b, and a third layer (shown in FIG. 13) is formed thereon. A third layer from the bottom). Next, a three-dimensional partition wall 126c is formed on the upper surface of the third layer, and pattern layers 180d, 180e, and 180f are formed in a pattern layer forming region surrounded by the three-dimensional partition wall 126c, and a fourth layer (shown in FIG. 13) is formed thereon. A fourth layer from the bottom). Next, a three-dimensional partition wall 126d is formed on the upper surface of the fourth layer, and pattern layers 180g, 180h, 180i and 180j are formed in a pattern layer forming region surrounded by the three-dimensional partition wall 126d, and a fifth layer (FIG. 13) is formed thereon. The fifth layer from the bottom shown in FIG.
[0067]
Hereinafter, similarly, a sixth layer (sixth layer from the bottom shown in FIG. 13) including the three-dimensional partition wall 126e and the pattern layers 180k, 180l, 180m, 180n, and 180o, the three-dimensional partition wall 126f and the pattern layers 180p, 180q , 180r and 180s (seventh layer from the bottom shown in FIG. 13), an eighth layer (shown in FIG. 13) including the three-dimensional partition wall 126g and the pattern layers 180t, 180u, 180v and 182a The eighth layer from the bottom), the ninth layer including the three-dimensional partition wall 126h and the pattern layers 180w, 180x and 182b (the ninth layer from the bottom shown in FIG. 13), and the three-dimensional partition wall 126i as a protective layer, And the tenth layer including the pattern layers 183 and 182c as the electrodes is formed, and the pattern layers 180a to 180x are formed as shown in FIG. Coil is formed on a plane perpendicular to the plane of the insulating substrate 204, and generates an inductance. At this time, the electrode 182 indicated by the broken line is composed of the pattern layers 182a to 182c, and is formed so as to be led out from a position deep inside the paper surface to the surface of the insulating substrate above the paper surface. Thus, the insulating substrate 204 containing the coil formed on the plane orthogonal to the surface of the insulating substrate is formed.
[0068]
(Tenth embodiment)
Next, a tenth embodiment of the present invention will be described. In the present embodiment, a method for forming a coil on the surface of an insulating substrate will be exemplified. FIG. 14 is a plan view of an insulating substrate provided with a coil according to the tenth embodiment of the present invention. In order to form the resistor according to the present embodiment, as shown in FIG. 14, a three-dimensional partition wall 127 is formed on the surface of the insulating substrate 10 i, and liquid is discharged into the pattern layer forming region 128 that can be surrounded by the three-dimensional partition wall 127. A conductor layer is discharged from the head to form a pattern layer precursor, and the pattern layer precursor is subjected to conductivity development treatment, whereby a pattern layer 184 having a shape as shown in FIG. 14 is obtained. In this way, the insulating substrate 205 provided with the coil constituted by the pattern layer 184 on the surface is formed. The portions 186a and 186b at both ends of the pattern layer 184 constitute the electrode portion of the coil. A protective layer (not shown) may be provided except for the electrode portions 186a and 186b at both ends of the pattern layer 184 constituting the coil.
[0069]
(Eleventh embodiment)
Next, a pattern forming apparatus for forming a pattern layer according to the present invention will be described. FIG. 15 is a side view of the pattern forming apparatus 90 according to the present embodiment, and FIG. 16 is a perspective view of the pattern forming apparatus 90 according to the present embodiment. As shown in FIGS. 15 and 16, the pattern forming apparatus 90 according to this embodiment includes an insulator forming solution as a first liquid discharge head that discharges droplets from nozzles M arranged in a line by an inkjet method. A line inkjet head 92 and a conductor forming liquid line inkjet head 94 as a second liquid discharge head are provided.
[0070]
These line inkjet heads 92 and 94 are supported by guide portions 102 and 104 that move independently. The guide portions 102 and 104 are guided by the guide rail 100 disposed above the base 98 and move along the base 98. Note that a timing belt 101 is connected to each of the guide portions 102 and 104, and the timing belt 101 is wound around a pulley 103, and the pulley 103 is rotated by a driving device 126, whereby an insulator forming solution line inkjet head. 92 and the conductor forming liquid line inkjet head 94 are moved along the base 98.
[0071]
On the other hand, the base 98 is suspended from a hydraulic cylinder 108 fixed to the beam member 110. The base 98 is moved up and down by extending and contracting the hydraulic cylinder 108. The base 98 incorporates a waterproofed heater 112. The heater 112 can heat and dry the insulating substrate 10 evenly by heating a region larger than the area of the insulating substrate 10 set on the base 98.
[0072]
The insulator forming solution line ink jet head 92, the conductor forming liquid line ink jet head 94, the hydraulic cylinder 108, and the driving device 126 are driven and controlled by the CPU 124. The CPU 124 receives the layout of the pattern layer and the protective layer from the input unit 128, and drives and controls the line inkjet head and the like based on the layout information.
[0073]
Next, the operation of the pattern forming apparatus 90 will be described using the insulating substrate 10 shown in FIG. 1 as an example. When the insulating substrate 10 is set at a predetermined position on the base 98, the insulator forming solution line inkjet head 92 scans along the guide rail 100 and dilutes polyimide with an organic solvent from the discharge nozzle corresponding to the position of the three-dimensional partition wall 12. The three-dimensional partition wall 12 is formed on the surface of the insulating substrate 10 by discharging a droplet of the resin solution, that is, the insulator forming solution.
[0074]
Thus, by forming the discharge nozzles in a line shape, it becomes possible to discharge the insulator forming solution to the entire width direction of the insulating substrate 10 at a time, so that productivity is improved. Further, since the scanning is not performed in the width direction, the position accuracy (landing accuracy) of the position where the solution is discharged is also improved.
[0075]
Next, the conductor forming liquid line inkjet head 94 discharges and applies a solution in which silver particles are dispersed while scanning, that is, a droplet of the conductor forming liquid, to the pattern layer forming region 14 of the three-dimensional partition wall 12 (B). Here, the heater 112 heats the insulating substrate 10 to develop conductivity, and the pattern layer 16 which is a pattern layer is formed. Conductivity may be expressed by laser exposure including a mirror that scans laser light.
[0076]
Moreover, the high three-dimensional partition 12 can be easily formed with a polyimide resin having a high viscosity. Furthermore, since the pattern layer is formed by discharging the conductor forming liquid using the liquid discharge head, it is possible to easily join the wirings on the front and back surfaces of the insulating substrate. Further, by using a thermal liquid discharge head, a high-density discharge port can be easily manufactured. Furthermore, the present invention can be used to form a highly integrated fine pattern layer required for downsizing and high performance of electronic equipment, and helps shorten the time required for forming the pattern layer.
[0077]
In the invention according to this embodiment, each process of forming the pattern layer on the insulating substrate is performed in a state where the insulating substrate is positioned on the base, and therefore it is necessary to position the insulating substrate for each process. Therefore, a highly accurate pattern layer can be formed. Further, by arranging the liquid discharge heads in a line along the width direction of the insulating substrate, the pattern layer can be formed at a time by only scanning in one direction.
[0078]
Note that a solution in which a heat-resistant resin is dissolved in a solvent may be used as the insulator forming solution. Further, the droplet of the conductor forming liquid is discharged from a thermal or piezoelectric liquid discharge head, and the droplet of the insulator forming solution is discharged from the liquid discharge head using electrostatic force. In addition, a plurality of discharge nozzles of the liquid discharge head are formed in a line along the width direction of the insulating substrate, and droplets can be discharged from each discharge nozzle according to the layout of the pattern layer and the protective layer.
[0079]
【The invention's effect】
Since the present invention is configured as described above, it does not require a mask, can flexibly cope with a change in the pattern shape of a wiring pattern, requires a short time to form a pattern layer, can reduce costs, and is free from dust and insulation. A pattern forming method and a pattern forming apparatus that can form a pattern layer (three-dimensional wiring pattern) having a three-dimensional structure that is not easily affected by the surface state of the substrate and has a low rate of waste of solution in the coating process. .
[Brief description of the drawings]
FIG. 1 is a perspective view showing a manufacturing procedure of a pattern forming method according to a first embodiment of the present invention.
FIG. 2 is a sectional view showing a manufacturing procedure of the pattern forming method according to the first embodiment of the present invention.
FIG. 3 is a perspective view showing a manufacturing procedure of a pattern forming method according to a second embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a manufacturing procedure of a pattern forming method according to a second embodiment of the present invention.
FIG. 5 is a perspective view showing a manufacturing procedure of a pattern forming method according to a third embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a manufacturing procedure of a pattern forming method according to a third embodiment of the present invention.
FIG. 7 is a perspective view showing a manufacturing procedure of a pattern forming method according to a fourth embodiment of the present invention.
FIG. 8 is a cross-sectional view showing a manufacturing procedure of a pattern forming method according to a fourth embodiment of the present invention.
FIG. 9 is a cross-sectional view of an insulating substrate incorporating a capacitor according to a fifth embodiment of the present invention.
FIG. 10 is a cross-sectional view of an insulating substrate incorporating a capacitor according to a sixth embodiment of the present invention.
FIG. 11 is a cross-sectional view of an insulating substrate incorporating a resistor according to a seventh embodiment of the present invention.
FIG. 12 is a cross-sectional view of an insulating substrate incorporating a resistor according to an eighth embodiment of the present invention.
FIG. 13 is a cross-sectional view of an insulating substrate having a built-in coil according to a ninth embodiment of the present invention.
FIG. 14 is a plan view of an insulating substrate including a coil according to a tenth embodiment of the present invention.
FIG. 15 is a side view of the pattern forming apparatus according to the present invention.
FIG. 16 is a perspective view of a pattern forming apparatus according to the present invention.
[Explanation of symbols]
10 Insulating substrate
12 Solid bulkhead
13 Pattern layer precursor
14 Pattern layer formation region
16 pattern layers
18 Protective layer
92 Insulator forming solution line inkjet head (first liquid ejection head)
94 Conductor forming liquid line inkjet head (second liquid discharge head)
98 base
102 Guide part (head scanning means)
104 Guide part (head scanning means)
108 Hydraulic cylinder (base lifting means)
112 Heater
122 Hydraulic cylinder (moving means)
124 CPU (control means)

Claims (10)

Forming a concave pattern layer forming region surrounded by the three-dimensional partition by discharging a droplet of the insulator-forming solution on the insulating substrate to form a three-dimensional partition surrounding the predetermined region; ,
Forming a pattern layer precursor by discharging a droplet of a conductor forming liquid containing conductive particles to the pattern layer forming region; and
And a step of subjecting the pattern layer precursor to a conductive expression process to obtain a patterned layer having conductivity. The pattern forming method according to claim 1, wherein the droplet of the insulator forming solution is discharged from a liquid discharge head using electrostatic force. The pattern forming method according to claim 1, wherein the droplet of the conductor forming liquid is discharged from a thermal liquid discharge head or a liquid discharge head using a piezoelectric effect. A part of the surface of the pattern layer is formed by discharging a droplet of an insulator forming solution onto a part of the surface of the pattern layer after the step of obtaining the conductive pattern by performing the conductive expression treatment. The pattern forming method according to claim 1, further comprising a step of forming a protective layer on the substrate. 5. The pattern formation according to claim 1, wherein the conductive expression process is a process of heating the pattern layer precursor or a process of irradiating the pattern layer precursor with a laser. 6. Method. A step of forming a concave pattern layer forming region surrounded by the three-dimensional partition, a step of forming the pattern layer precursor, and a pattern layer having conductivity by subjecting the pattern layer precursor to a conductive expression treatment 6. The pattern layer having a three-dimensional structure is formed on the insulating substrate by repeating the step of obtaining the pattern layer. 6. The pattern formation method as described. The pattern according to claim 1, wherein the insulator forming solution and the conductor forming liquid droplets are discharged from a liquid discharge head based on a layout of the pattern layer. Forming method. The pattern according to any one of claims 1 to 7, wherein the step of obtaining a pattern layer having conductivity by subjecting the pattern layer precursor to a conductivity expression treatment is performed in an inert gas atmosphere. Forming method. A first liquid discharge head that discharges an insulator-forming solution using electrostatic force;
A second liquid discharge head for discharging a conductor forming liquid containing conductive particles;
Means for performing a conductive expression treatment on an insulating substrate set on a base;
Scanning means for scanning by moving the first liquid discharge head and the second liquid discharge head relative to the insulating substrate;
The scanning unit is operated on the basis of the layout information of the pattern layer to be formed and the protective layer covering a part of the surface of the pattern layer, and the liquid is supplied from the first liquid discharge head and the second liquid discharge head. A pattern forming apparatus comprising: a control unit that discharges droplets. The pattern formation according to claim 9, wherein the means for performing the conductive expression process is at least one of a means for heating the insulating substrate and a means for irradiating the insulating substrate with a laser. apparatus.

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