[go: up one dir, main page]

JP2004319799A - Film capacitor device and its manufacturing method - Google Patents

Film capacitor device and its manufacturing method Download PDF

Info

Publication number
JP2004319799A
JP2004319799A JP2003112252A JP2003112252A JP2004319799A JP 2004319799 A JP2004319799 A JP 2004319799A JP 2003112252 A JP2003112252 A JP 2003112252A JP 2003112252 A JP2003112252 A JP 2003112252A JP 2004319799 A JP2004319799 A JP 2004319799A
Authority
JP
Japan
Prior art keywords
resin
dip
case
filling
capacitor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003112252A
Other languages
Japanese (ja)
Inventor
Yoriko Takeya
依里子 竹谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichicon Corp
Original Assignee
Nichicon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichicon Corp filed Critical Nichicon Corp
Priority to JP2003112252A priority Critical patent/JP2004319799A/en
Publication of JP2004319799A publication Critical patent/JP2004319799A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To realize miniaturization/weight reduction of a film capacitor device by contriving the improvement of resistance to moisture/restriction of temperature rise of the same. <P>SOLUTION: A dip type capacitor is obtained by winding a pair of metallized films and applying resin dip on a capacitor element, in which an electrode out-going unit is formed by applying metal spray on the end surface of the winding. A plurality of capacitors are connected through wire connection or substrate connection in series, parallel or series-parallel and are stored into a case while filling a resin into the case until 10-90% of the height of the capacitor. The filling resin is urethane and/or epoxy resin and curing by heating after filling is effected within 100-150 min at 65-85°C. The case is formed of polybutylene terephthalate, polycarbonate, polyphenylene sulfide or polyethylene terephthalate resin while the dip resin is an epoxy resin and the curing by heating of the same is effected within 100-150 min at 100-120°C. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は複数の金属化フィルムコンデンサを結線または基板接続したフィルムコンデンサ装置およびその製造方法に関するものであり、特に耐湿性、放熱性を改善し、小形化、軽量化を図ったフィルムコンデンサ装置に関するものである。
【0002】
【従来の技術】
従来、金属化フィルムを巻回したコンデンサ素子またはコンデンサユニットをケースに格納したフィルムコンデンサ装置は、絶縁油を含浸した油浸コンデンサが主流を占めていたが、可燃性の絶縁油を含浸しているので、大型で燃えやすいという欠点があり、最近ではウレタン樹脂および/またはエポキシ樹脂を充填した乾式フィルムコンデンサ装置に変わりつつある(例えば、特許文献1〜3参照)。
【0003】
【特許文献1】
特開2000−353638(第2−4頁、図1)
【特許文献2】
特開2001−358033(第2−3頁、図7)
【特許文献3】
特開2000−331862(第2−4頁、図5)
【0004】
【発明が解決しようとする課題】
ところが、上記の樹脂充填型の乾式フィルムコンデンサ装置では、ケース一杯に樹脂を充填しているため、耐湿負荷試験において、クラックが発生しやすく、また、各コンデンサ素子にコーティング等の処置が施されていなかったため、クラックから侵入した湿気と金属蒸着電極が化学反応して変質し、電極機能がなくなり、静電容量が減少するという問題があり、また、温度上昇試験において、コンデンサ素子内に熱がこもり、放熱しにくく、温度上昇が大きくなるという問題があった。
よって、樹脂充填型の乾式フィルムコンデンサ装置において、湿気の侵入を防止し、温度上昇を抑制することできる構造が求められていた。
【0005】
【課題を解決するための手段】
本発明は、上記課題を解決するもので、コンデンサ素子にディップの下塗り、上塗りを施してクラックの発生を抑制し耐湿性を向上させ、またケースの樹脂充填量を低減することで放熱性を高め、温度上昇を抑制し、併せて軽量化・小形化を図ろうとするものである。
【0006】
すなわち、一対の金属化フィルムを巻回し、巻回端面に金属溶射して電極引出部5を形成したコンデンサ素子に、樹脂ディップを施してディップ型コンデンサ1とし、該コンデンサ1を複数個、直列、並列、または直並列に、電極引出部5を結線または基板接続して、ケース6に格納し、該ケース6にコンデンサ高さの10〜90%まで樹脂4を充填したことを特徴とするフィルムコンデンサ装置である。
【0007】
また、上記の充填樹脂4がウレタン系および/またはエポキシ系樹脂であり、充填後の加熱硬化を、65〜85℃で100〜150分間行うことを特徴とするフィルムコンデンサ装置およびその製造方法である。
【0008】
さらに、上記のケース6がポリブチレンテレフタレート系、ポリカーボネート系、ポリフェニレンスルフィド系、またはポリエチレンテレフタレート系の樹脂からなることを特徴とするフィルムコンデンサ装置である。
【0009】
そして、上記のディップ樹脂がエポキシ系であり、加熱硬化を、100〜120℃で100〜150分間行うことを特徴とするフィルムコンデンサ装置およびその製造方法である。
【0010】
【発明の実施の形態】
一対の金属化フィルムを巻回し、巻回端面に金属溶射して電極引出部5を形成したコンデンサ素子に、エポキシ樹脂によるディップ(下塗り/上塗り、加熱硬化100〜120℃、100〜150分間)を施してディップ型コンデンサ1とし、該コンデンサ1を複数個、直列、並列、または直並列に電極引出部5を結線または基板接続した後、ケース6に格納し、該ケース6に樹脂4を、コンデンサ1の高さの10〜90%まで充填して、フィルムコンデンサ装置を作製する。
上記の充填樹脂4として、ウレタン系および/またはエポキシ系樹脂を使用し、65〜85℃で100〜150分間加熱硬化させる。
また、ケース6にポリブチレンテレフタレート系、ポリカーボネート系、またはポリエチレンテレフタレート系の樹脂を使用する。
上記構成により、フィルムコンデンサ装置の放熱性、耐湿性が改善され、また、樹脂充填することにより、フィルムコンデンサ装置の耐振動性改善、ガタつき防止を図ることができる。
【0011】
【実施例】
図1は本発明の実施例による、ディップ型コンデンサを基板接続した状態(ケースに格納する前)を表す図であり、(a)は平面図、(b)は側面断面図、(c)は正面図である。
金属化フィルムとして、3.7μmアルミニウム蒸着金属ポリエチレンテレフタレートフィルムを用い、該フィルムを巻回し、巻回端面に亜鉛、はんだ等の金属を溶射して電極引出部5を形成した30μFの偏平型コンデンサ素子に、エポキシ樹脂によるディップを、下塗り→加熱硬化(110℃、110分間)、上塗り→加熱硬化(110℃、110分間)の2段階で行った。なお、この時、電極引出部5のリード線を固着する部分は、樹脂が付着しないように予めシールしておくか、または、ディップ後に付着した樹脂を切削除去して形成した。
その後、両端の電極引出部5にはんだメッキ軟CP線、はんだメッキ軟銅線等からなるリード線7a、7bを溶接またははんだ付けにより接合してディップ型コンデンサ1を作製した。
上記のディップ型コンデンサ1を7個、並列接続となるよう回路を作製した基板に短径方向に沿って並置固定後(図1)、図2のように、ポリブチレンテレフタレート樹脂からなるケース6に格納し、ウレタン樹脂を充填し、75℃で120分間加熱硬化させ、樹脂充填型のフィルムコンデンサ装置(定格:30μF、500VDC)を作製した。図2のフィルムコンデンサ装置において、(a)は平面断面図、(b)は側面断面図、(c)は正面断面図である。
なお、充填樹脂の深さはコンデンサ高さの10〜90%とし、10%充填(実施例1−1)、30%充填(実施例1−2)、60%充填(実施例1−3)、90%充填(実施例1−4)とした。さらに、比較例1として充填しないものと、比較例2として100%充填としたものを作製した。
【0012】
(従来例)
従来例として図4に示すように、樹脂ディップしないコンデンサ素子2を使用し、実施例と同様に基板接続し、ケース6に格納した後、コンデンサ素子の高さを超えるレベルまでウレタン樹脂を充填し、その上をエポキシ樹脂層9で封止したもの(定格:実施例と同じ)を作製した。図4のフィルムコンデンサ装置において、(a)は平面断面図、(b)は側面断面図、(c)は正面断面図である。
【0013】
上記のように作製したコンデンサ装置で耐湿負荷試験を実施した。ここで、試料数は各20個とした。
なお、耐湿負荷試験の試験条件は、85℃−85%RH、電圧500VDC、1000時間印加とした。
試験結果を表1および図5に示す。
従来例では1000時間後の静電容量変化率は、−3.0%と大幅な減少を示したのに対して、実施例1、1−1〜1−4および比較例1、2では−0.2〜−0.6%に留まり、変化率が小さかった。これはコンデンサ素子を樹脂ディップしたことで、ディップせず樹脂充填した場合と比べて樹脂の靱性が増し、クラック発生−水分侵入による劣化が抑えられたことによるものと考えられる。
【0014】
【表1】

Figure 2004319799
【0015】
次に、上記と同一試料(実施例1、1−1〜1−4、比較例1、2、従来例)について、温度上昇試験を実施した。ここで、試料数は耐湿負荷試験と同様、各20個とした。
温度上昇試験の条件は、設計リプル電流10A(10kHz)に対し、15A(10kHz、正弦波)を通電した。
温度上昇試験の結果を表2および図6に示す。
従来例(100%充填)では温度上昇は、15℃と大幅な上昇を示し、また、比較例2(100%充填)でも16℃と高かったのに対し、充填なしの比較例1、10〜90%充填の実施例1−1〜1−4は2〜7℃に留まり、温度上昇が小さかった。
【0016】
【表2】
Figure 2004319799
【0017】
上記のように作製したコンデンサ装置で振動試験を実施した。ここで、試料数は各々20個とした。
なお、、振動試験の条件は、前後、左右、上下の3方向で、各々、10〜1300Hz:5G、1301〜2000Hz:7G、Log Sweep:30サイクル(30分/1サイクル)とした。
【0018】
振動試験の結果を表3および図7に示す。
比較例1では、1kHz損失率が試験前0.67%から試験後0.85%に増加したのに対して、実施例1−1〜1−4、および比較例2では、試験前と試験後を比較すると、静電容量、1kHz損失率の特性変化が少なく、樹脂充填による効果が認められた。
【0019】
【表3】
Figure 2004319799
【0020】
以上の結果、ディップ型コンデンサを複数個、電極引出部を直列、並列、または直並列に、結線または基板接続して、ケースに格納し、樹脂10〜90%充填したフィルムコンデンサ装置では、耐湿試験、および温度上昇試験での特性変化が少なく、また、耐振動性が改善されていることが分かる。
ここで、コンデンサ装置の軽量化を考えると、樹脂充填量は少ない方がよいが、耐振動性、ガタつきを考慮すると、10〜90%の範囲が好ましい。
【0021】
また、樹脂ディップは回数を増やした方が効果があるが、工数を考慮すると、2回程度(下塗り、上塗り各1回)が好ましい。さらにディップ樹脂の加熱硬化条件は、工数と硬化状態との兼ね合いから、100〜120℃で100〜150分が好ましい。
そして、ディップ樹脂の加熱硬化条件は、工数と硬化状態との兼ね合いから、65〜85℃で100〜150分が好ましい。
さらに、上記実施例とは別のフィルムコンデンサ装置の形態として、図3に示すような構成(ケース格納前)をとることもできる。図3において、陰極端子8bは共通に接続されているが、陽極端子8aは2つあり、5つのディップ型コンデンサを並列接続したもの2組で用いることができる。
【0022】
上記実施例では、金属化フィルムコンデンサについて誘電体をアルミニウム蒸着ポリエチレンテレフタレートフィルムとしたが、ポリプロピレンフィルムを用いた場合でも同様の結果が得られ、また蒸着電極を亜鉛としても上記と同様の結果が得られた。
また、上記実施例では、充填樹脂をウレタン樹脂としたが、エポキシ樹脂としても、ウレタン樹脂/エポキシ樹脂の混合系としても上記と同様の結果が得られた。
さらに、上記実施例では、ケースにポリブチレンテレフタレート樹脂を用いたが、ポリカーボネート樹脂、ポリフェニレンスルフィド樹脂、またはポリエチレンテレフタレート樹脂を用いても上記と同様の結果が得られた。
そして、上記のディップ型コンデンサは基板接続としたが、リード同士を結線するか、またはリードを金属端子板で結線しても、同様の結果が得られた。
【0023】
【発明の効果】
上記したように、ディップ型コンデンサを複数個、電極引出部を直列、並列、または直並列に、結線または基板接続して、ケースに格納し、該ケースにコンデンサ高さの10〜90%まで樹脂充填することにより、耐湿試験、温度上昇試験での特性変化が少なく、また、耐振動性、ガタつきが改善され、小形化、軽量化が可能なフィルムコンデンサ装置を得ることができる。
【図面の簡単な説明】
【図1】本発明の実施例によるディップ型コンデンサの基板接続状態を表す図であり、(a)は平面図、(b)は側面断面図、(c)は正面図である。
【図2】本発明の実施例によるフィルムコンデンサ装置であり、図1の基板接続したディップ型コンデンサをケースに格納し、樹脂充填したものの構造で、(a)は平面断面図、(b)は側面断面図、(c)は正面断面図である。
【図3】本発明の他の実施例によるフィルムコンデンサ装置の平面図(ケース格納前)である。
【図4】従来例によるフィルムコンデンサ装置の構造であり、(a)は平面断面図、(b)は側面断面図、(c)は正面断面図である。
【図5】本発明の実施例によるフィルムコンデンサ装置と、従来例の耐湿負荷試験結果を比較した図である。
【図6】本発明の実施例によるフィルムコンデンサ装置と、従来例の温度上昇試験結果を比較した図である。
【図7】本発明の実施例によるフィルムコンデンサ装置と、従来例とで、振動試験後の損失の変化を比較した図である。
【符号の説明】
1 ディップ型コンデンサ
2 コンデンサ素子(樹脂ディップなし)
3 基板
4 充填樹脂
5 電極引出部
6 ケース
7a 陽極リード線
7b 陰極リード線
8a 陽極端子
8b 陰極端子
9 エポキシ樹脂層
10 パターン
11 はんだ
12 陽極端子接続線[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a film capacitor device in which a plurality of metallized film capacitors are connected or connected to a substrate and a method of manufacturing the same, and more particularly to a film capacitor device in which moisture resistance and heat dissipation are improved, and the size and weight are reduced. It is.
[0002]
[Prior art]
Conventionally, in the case of a film capacitor device in which a capacitor element or a capacitor unit in which a metallized film is wound is housed in a case, an oil immersion capacitor impregnated with insulating oil occupies the mainstream, but is impregnated with flammable insulating oil. Therefore, it has a disadvantage that it is large and easily burned, and recently, it has been changed to a dry film capacitor device filled with a urethane resin and / or an epoxy resin (for example, see Patent Documents 1 to 3).
[0003]
[Patent Document 1]
JP 2000-353638 (pages 2-4, FIG. 1)
[Patent Document 2]
JP-A-2001-358033 (page 2-3, FIG. 7)
[Patent Document 3]
JP 2000-331862 (pages 2-4, FIG. 5)
[0004]
[Problems to be solved by the invention]
However, in the above resin-filled dry film capacitor device, since the resin is completely filled in the case, cracks are likely to occur in a moisture resistance load test, and each capacitor element is subjected to a treatment such as coating. Therefore, there is a problem that the moisture that has penetrated from the cracks and the metal-deposited electrode undergo a chemical reaction and deteriorates due to a chemical reaction, the electrode function is lost, and the capacitance decreases.In addition, heat is trapped in the capacitor element in the temperature rise test. However, there is a problem that heat is hardly dissipated and a temperature rise is increased.
Therefore, there has been a demand for a resin-filled dry film capacitor device having a structure capable of preventing moisture from entering and suppressing a rise in temperature.
[0005]
[Means for Solving the Problems]
The present invention solves the above-mentioned problems, and improves the moisture resistance by reducing the occurrence of cracks by applying an undercoating or overcoating of a dip on a capacitor element, and improving heat dissipation by reducing a resin filling amount of a case. In addition, the temperature rise is suppressed, and the weight and size are reduced.
[0006]
That is, a capacitor element having a pair of metallized films wound thereon and metal-sprayed on the wound end surface to form the electrode lead-out portion 5 is subjected to resin dip to obtain a dip-type capacitor 1, and a plurality of such capacitors 1 are connected in series. A film capacitor in which the electrode lead-out portions 5 are connected or connected to a substrate in a parallel or series-parallel manner, stored in a case 6, and filled with the resin 4 up to 10 to 90% of the height of the capacitor. Device.
[0007]
Further, there is provided a film capacitor device and a method of manufacturing the same, wherein the filling resin 4 is a urethane-based resin and / or an epoxy-based resin, and heat curing after filling is performed at 65 to 85 ° C. for 100 to 150 minutes. .
[0008]
Further, the case 6 is a film capacitor device characterized in that the case 6 is made of a polybutylene terephthalate-based, polycarbonate-based, polyphenylene sulfide-based or polyethylene terephthalate-based resin.
[0009]
The dip resin is an epoxy resin, and heat curing is performed at 100 to 120 ° C. for 100 to 150 minutes, and a method for manufacturing the film capacitor device.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
A dip (undercoat / overcoat, heat-curing at 100 to 120 ° C., 100 to 150 minutes) of an epoxy resin is applied to the capacitor element in which a pair of metallized films are wound, and the electrode end portions 5 are formed by metal spraying on the wound end surfaces. To form a dip-type capacitor 1. A plurality of such capacitors 1 are connected in series, parallel, or series-parallel with the electrode lead-out portions 5 connected or connected to a substrate, and then stored in a case 6. Fill to 10 to 90% of the height of 1 to make a film capacitor device.
A urethane-based and / or epoxy-based resin is used as the above-mentioned filling resin 4, and is cured by heating at 65 to 85 ° C for 100 to 150 minutes.
The case 6 is made of a polybutylene terephthalate resin, a polycarbonate resin, or a polyethylene terephthalate resin.
With the above configuration, the heat dissipation and the moisture resistance of the film capacitor device are improved, and the resin capacitor is filled, whereby the vibration resistance of the film capacitor device can be improved and the rattling can be prevented.
[0011]
【Example】
1A and 1B are diagrams showing a state in which a dip-type capacitor is connected to a substrate (before storing in a case) according to an embodiment of the present invention, wherein FIG. 1A is a plan view, FIG. 1B is a side sectional view, and FIG. It is a front view.
As a metallized film, a 3.7 μm aluminum-deposited metal polyethylene terephthalate film is wound, the film is wound, and a metal such as zinc or solder is sprayed on the winding end surface to form an electrode lead-out portion 5. Then, a dip using an epoxy resin was performed in two stages of undercoating → heating and curing (110 ° C., 110 minutes) and overcoating → heating and curing (110 ° C., 110 minutes). At this time, the portion of the electrode lead portion 5 to which the lead wire is fixed was sealed in advance so that the resin did not adhere, or was formed by cutting and removing the resin adhered after dipping.
Thereafter, lead wires 7a and 7b made of a solder-plated soft CP wire, a solder-plated soft copper wire, or the like were joined to the electrode lead-out portions 5 at both ends by welding or soldering to produce a dip-type capacitor 1.
After fixing 7 of the above-mentioned dip-type capacitors 1 side by side along the minor axis direction on a substrate on which a circuit was prepared so as to be connected in parallel (FIG. 1), as shown in FIG. 2, a case 6 made of polybutylene terephthalate resin was formed. It was stored, filled with a urethane resin, and cured by heating at 75 ° C. for 120 minutes to produce a resin-filled film capacitor device (rated: 30 μF, 500 VDC). 2A is a plan sectional view, FIG. 2B is a side sectional view, and FIG. 2C is a front sectional view.
The depth of the filling resin is 10 to 90% of the height of the capacitor, 10% filling (Example 1-1), 30% filling (Example 1-2), 60% filling (Example 1-3). , 90% filling (Examples 1-4). Further, a non-filled product was prepared as Comparative Example 1 and a 100% filled product was prepared as Comparative Example 2.
[0012]
(Conventional example)
As a conventional example, as shown in FIG. 4, a capacitor element 2 without resin dip is used, connected to a substrate as in the embodiment, stored in a case 6, and then filled with urethane resin to a level exceeding the height of the capacitor element. Then, the top was sealed with an epoxy resin layer 9 (rating: the same as in the example). 4A is a plan sectional view, FIG. 4B is a side sectional view, and FIG. 4C is a front sectional view.
[0013]
A moisture resistance load test was performed on the capacitor device manufactured as described above. Here, the number of samples was 20 each.
The test conditions of the humidity resistance load test were 85 ° C.-85% RH, a voltage of 500 VDC, and a voltage of 1000 hours.
The test results are shown in Table 1 and FIG.
In the conventional example, the capacitance change rate after 1000 hours showed a large decrease of -3.0%, whereas in Examples 1, 1-1 to 1-4 and Comparative Examples 1 and 2,-. It remained at 0.2 to -0.6%, and the rate of change was small. This is considered to be due to the fact that the resin element was dipped in the capacitor element and the toughness of the resin was increased as compared with the case where the resin element was filled without dipping, so that crack generation and deterioration due to moisture intrusion were suppressed.
[0014]
[Table 1]
Figure 2004319799
[0015]
Next, a temperature rise test was performed on the same samples as those described above (Examples 1, 1-1 to 1-4, Comparative Examples 1, 2, and Conventional Examples). Here, the number of samples was 20 each as in the moisture resistance load test.
As for the conditions of the temperature rise test, 15 A (10 kHz, sine wave) was applied to the designed ripple current of 10 A (10 kHz).
The results of the temperature rise test are shown in Table 2 and FIG.
In the conventional example (100% filling), the temperature rise showed a large increase of 15 ° C., and in Comparative Example 2 (100% filling), which was as high as 16 ° C., Comparative Examples 1 and 10 without filling were used. In Examples 1-1 to 1-4 with 90% filling, the temperature remained at 2 to 7 ° C, and the temperature rise was small.
[0016]
[Table 2]
Figure 2004319799
[0017]
A vibration test was performed on the capacitor device manufactured as described above. Here, the number of samples was 20 each.
In addition, the conditions of the vibration test were 10-1300 Hz: 5G, 1301-2000 Hz: 7G, and Log Sweep: 30 cycles (30 minutes / 1 cycle) in three directions of front and rear, left and right, and up and down, respectively.
[0018]
The results of the vibration test are shown in Table 3 and FIG.
In Comparative Example 1, the 1 kHz loss rate increased from 0.67% before the test to 0.85% after the test, while in Examples 1-1 to 1-4 and Comparative Example 2, the loss before the test Comparing the latter, there was little change in the characteristics of the capacitance and the loss rate of 1 kHz, and the effect of resin filling was recognized.
[0019]
[Table 3]
Figure 2004319799
[0020]
As a result, in a film capacitor device in which a plurality of dip-type capacitors and electrode lead portions are connected in series, parallel, or series-parallel, connected or connected to a board, stored in a case, and filled with 10 to 90% resin, a moisture resistance test was performed. , And a small change in characteristics in the temperature rise test, and the vibration resistance is improved.
Here, considering the weight reduction of the capacitor device, the smaller the resin filling amount, the better. However, in consideration of vibration resistance and rattling, a range of 10 to 90% is preferable.
[0021]
In addition, although it is more effective to increase the number of resin dips, the number of resin dips is preferably about two (one each for undercoating and overcoating) in consideration of man-hours. Further, the conditions for heat-curing the dip resin are preferably 100 to 120 ° C. for 100 to 150 minutes in consideration of the number of steps and the cured state.
The conditions for heat-curing the dip resin are preferably from 65 to 85 ° C. for 100 to 150 minutes in consideration of the number of steps and the cured state.
Further, as a form of a film capacitor device different from the above embodiment, a configuration as shown in FIG. 3 (before storing the case) may be employed. In FIG. 3, the cathode terminal 8b is connected in common, but there are two anode terminals 8a, and two sets of five dip capacitors connected in parallel can be used.
[0022]
In the above embodiment, the metallized film capacitor was made of an aluminum-deposited polyethylene terephthalate film as the dielectric, but the same result was obtained even when a polypropylene film was used, and the same result was obtained when the deposited electrode was zinc. Was done.
Further, in the above embodiment, the filling resin is a urethane resin. However, the same result as described above was obtained both as an epoxy resin and as a mixed system of a urethane resin and an epoxy resin.
Further, in the above example, a polybutylene terephthalate resin was used for the case, but the same result as described above was obtained even when a polycarbonate resin, a polyphenylene sulfide resin, or a polyethylene terephthalate resin was used.
Although the above-described dip-type capacitor was connected to the substrate, similar results were obtained by connecting the leads or connecting the leads with a metal terminal plate.
[0023]
【The invention's effect】
As described above, a plurality of dip-type capacitors are connected in series, parallel, or series-parallel to the electrode lead portions, connected or connected to a board, and stored in a case. By filling, it is possible to obtain a film capacitor device which has a small change in characteristics in a humidity resistance test and a temperature rise test, has improved vibration resistance and rattling, and can be reduced in size and weight.
[Brief description of the drawings]
FIGS. 1A and 1B are diagrams showing a substrate connection state of a dip-type capacitor according to an embodiment of the present invention, wherein FIG. 1A is a plan view, FIG. 1B is a side sectional view, and FIG.
FIG. 2 is a film capacitor device according to an embodiment of the present invention, in which a dip-type capacitor connected to the substrate of FIG. 1 is stored in a case and filled with resin, (a) is a cross-sectional plan view, and (b) is a plan view. FIG. 4C is a side sectional view, and FIG.
FIG. 3 is a plan view (before storing a case) of a film capacitor device according to another embodiment of the present invention.
4A and 4B show the structure of a conventional film capacitor device, wherein FIG. 4A is a plan sectional view, FIG. 4B is a side sectional view, and FIG. 4C is a front sectional view.
FIG. 5 is a diagram comparing a film capacitor device according to an embodiment of the present invention and a result of a moisture resistance load test of a conventional example.
FIG. 6 is a diagram comparing the results of a temperature rise test between a film capacitor device according to an embodiment of the present invention and a conventional example.
FIG. 7 is a diagram comparing a change in loss after a vibration test between a film capacitor device according to an embodiment of the present invention and a conventional example.
[Explanation of symbols]
1 Dip type capacitor 2 Capacitor element (without resin dip)
3 Board 4 Filled resin 5 Electrode lead-out section 6 Case 7a Anode lead wire 7b Cathode lead wire 8a Anode terminal 8b Cathode terminal 9 Epoxy resin layer 10 Pattern 11 Solder 12 Anode terminal connection wire

Claims (4)

一対の金属化フィルムを巻回し、巻回端面に金属溶射して電極引出部を形成したコンデンサ素子に、樹脂ディップを施してディップ型コンデンサとし、該コンデンサを複数個、直列、並列、または直並列に、電極引出部を結線または基板接続して、ケースに格納し、該ケースにコンデンサ高さの10〜90%まで樹脂を充填したことを特徴とするフィルムコンデンサ装置。A pair of metallized films is wound, and a capacitor element having an electrode lead portion formed by metal spraying on the wound end face is subjected to resin dip to form a dip-type capacitor, and a plurality of such capacitors are connected in series, parallel, or series-parallel. A film capacitor device, characterized in that an electrode lead-out part is connected or connected to a substrate and stored in a case, and the case is filled with a resin up to 10 to 90% of the height of the capacitor. 請求項1記載の充填樹脂がウレタン系および/またはエポキシ系樹脂であり、充填後の加熱硬化を、65〜85℃で100〜150分間行うことを特徴とするフィルムコンデンサ装置およびその製造方法。2. A film capacitor device according to claim 1, wherein the filling resin is a urethane resin and / or an epoxy resin, and the heat curing after filling is performed at 65 to 85 [deg.] C. for 100 to 150 minutes, and a method for manufacturing the same. 請求項1記載のケースがポリブチレンテレフタレート系、ポリカーボネート系、ポリフェニレンスルフィド系、またはポリエチレンテレフタレート系の樹脂からなることを特徴とするフィルムコンデンサ装置。2. A film capacitor device according to claim 1, wherein the case is made of a polybutylene terephthalate-based, polycarbonate-based, polyphenylene sulfide-based or polyethylene terephthalate-based resin. 請求項1記載のディップ樹脂がエポキシ系であり、加熱硬化を、100〜120℃で100〜150分間行うことを特徴とするフィルムコンデンサ装置およびその製造方法。2. A film capacitor device according to claim 1, wherein the dip resin is an epoxy resin, and the heat curing is performed at 100 to 120 [deg.] C. for 100 to 150 minutes, and a method for manufacturing the same.
JP2003112252A 2003-04-17 2003-04-17 Film capacitor device and its manufacturing method Pending JP2004319799A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003112252A JP2004319799A (en) 2003-04-17 2003-04-17 Film capacitor device and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003112252A JP2004319799A (en) 2003-04-17 2003-04-17 Film capacitor device and its manufacturing method

Publications (1)

Publication Number Publication Date
JP2004319799A true JP2004319799A (en) 2004-11-11

Family

ID=33472508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003112252A Pending JP2004319799A (en) 2003-04-17 2003-04-17 Film capacitor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JP2004319799A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303050A (en) * 2005-04-19 2006-11-02 Hitachi Ltd Capacitor unit
DE102005031367A1 (en) * 2005-07-05 2007-01-11 Epcos Ag Power capacitor for use in power electronics module, has mechanical spring units arranged between housing and corresponding capacitor windings, and dielectric of windings is made of e.g. polyester, where units are formed as spring-pad
JP2007165546A (en) * 2005-12-13 2007-06-28 Nichicon Corp Film capacitor
JP2011192788A (en) * 2010-03-15 2011-09-29 Nippon Chemicon Corp Metalized film capacitor, metalized film capacitor device, and method of manufacturing them
US8339767B2 (en) 2005-05-02 2012-12-25 Epcos Ag Power capacitor
US8416556B2 (en) 2005-05-02 2013-04-09 Conti Temic Microelectronic Gmbh Power capacitor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303050A (en) * 2005-04-19 2006-11-02 Hitachi Ltd Capacitor unit
US8339767B2 (en) 2005-05-02 2012-12-25 Epcos Ag Power capacitor
US8416556B2 (en) 2005-05-02 2013-04-09 Conti Temic Microelectronic Gmbh Power capacitor
DE102005031367A1 (en) * 2005-07-05 2007-01-11 Epcos Ag Power capacitor for use in power electronics module, has mechanical spring units arranged between housing and corresponding capacitor windings, and dielectric of windings is made of e.g. polyester, where units are formed as spring-pad
JP2007165546A (en) * 2005-12-13 2007-06-28 Nichicon Corp Film capacitor
JP2011192788A (en) * 2010-03-15 2011-09-29 Nippon Chemicon Corp Metalized film capacitor, metalized film capacitor device, and method of manufacturing them

Similar Documents

Publication Publication Date Title
CN101983409B (en) Capacitor with sacrificial lead wire configuration and improved manufacturing method thereof
CA1057369A (en) Solid electrolyte capacitor with metal loaded resin end caps
CN1748270A (en) Protecting resin-encapsulated components
JP2008098462A (en) Solid electrolytic capacitor
WO2022163644A1 (en) Electrolytic capacitor
JP2004319799A (en) Film capacitor device and its manufacturing method
CN204991479U (en) Coiling formula SMD metallization polyester film condenser
JP3168584B2 (en) Solid electrolytic capacitors
JPS6032348B2 (en) Manufacturing method for electronic components
JP2007165546A (en) Film capacitor
JP7042397B2 (en) Capacitor
JP2010040633A (en) Film capacitor
US12407317B2 (en) Filter circuit
KR100975105B1 (en) Insulation Method for Chip SMT Components
JP3196783B2 (en) Manufacturing method of chip type solid electrolytic capacitor
JPS6027176B2 (en) Chip type electrolytic capacitor
JPH04276613A (en) Fabrication of solid electrolytic capacitor
JP2000150305A (en) Solid electrolytic capacitor and method of manufacturing the same
JP6790628B2 (en) Solid electrolytic capacitors and their manufacturing methods
JPH06140291A (en) Solid-state electrolytic capacitor
JP3185275B2 (en) Manufacturing method of chip-shaped solid electrolytic capacitor
JP2010123777A (en) Composite electrical component
JPH03241804A (en) Chip type metallized film capacitor
JP5428471B2 (en) Solid electrolytic capacitor and manufacturing method thereof
JP2008078535A (en) Capacitor

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051018

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080611

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080623

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080822

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080916