JP2004311980A - Semiconductor manufacturing apparatus and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device having a peeling mechanism of an adhesive tape for reducing defects such as cracks and chipping of a semiconductor chip to manufacture a high-quality semiconductor device and for suppressing a decrease in manufacturing yield. provide.
SOLUTION: The semiconductor tape side of the adhesive tape is suction-fixed with a porous material supported by a holding table 3 and separated into at least two suction areas with respect to a peeling direction of the adhesive tape 24. And a peeling mechanism for peeling off the adhesive tape 24 adhered to the semiconductor wafer. An adhesive layer is attached to each back surface of the semiconductor chip 1 on the semiconductor wafer. The semiconductor wafer is separated from the table by controlling two or more vacuum piping systems with the porous material, switching the suction block and the vacuum system divided into two or more before and after separating the adhesive tape, and separating the semiconductor chips individually from the table. . It is possible to create a stacked MCP product in which semiconductor chips are stacked.
[Selection diagram] FIG.

Description

Technical field to which the invention belongs

  The present invention relates to a semiconductor manufacturing apparatus and a method of manufacturing a semiconductor device, for example, a semiconductor manufacturing apparatus having a peeling mechanism for peeling an adhesive tape adhered to a semiconductor wafer, and a semiconductor device to which the semiconductor manufacturing apparatus is applied. And a method for producing the same.

Conventional technology

  Generally, in a semiconductor device manufacturing process, a semiconductor wafer on which elements have been formed is separated along a dicing line or a chip dividing line, and is divided into individual pieces to form a plurality of semiconductor chips. An adhesive tape is attached to the semiconductor wafer before and after the singulation step, and the singulated semiconductor chips are integrated in the wafer shape. The semiconductor wafer thus divided into a plurality of semiconductor chips and supported by the adhesive tape is transferred to a mounting process using, for example, a die bonder (see FIG. 2). Each semiconductor chip separated from the semiconductor wafer is picked up from an adhesive tape, and a semiconductor device is completed through a mounting process such as a mounting process on a lead frame or a TAB tape or a sealing process on a package.

  When picking up such individual semiconductor chips, after attaching the surface of the semiconductor wafer opposite to the surface to which the adhesive tape is attached, to another adhesive tape attached to the wafer ring Then, the adhesive tape is peeled off, and a wafer ring is mounted on a pickup device to pick up individual semiconductor chips.

  FIG. 55 is an enlarged cross-sectional view of main components of a conventional pickup device when a semiconductor chip 100 is picked up from an adhesive tape 101 (Patent Document 1). When the semiconductor chip 100 is peeled off and picked up from the adhesive tape 101 attached to the wafer ring, a push-up pin (needle) 102 is projected (raised) from the back side of the semiconductor chip 100 with the adhesive tape 101 interposed therebetween. Then, the semiconductor chip 100 is peeled off using the elastic force of the adhesive tape 101. The push-up pins 102 are arranged at positions corresponding to the corners or the vicinity of the center of the semiconductor chip 100, and the base thereof is mounted on the pin holder 103.

  The order in which the semiconductor chip 100 is peeled off from the adhesive tape 101 is as follows. First, the adhesive tape 101 to which the semiconductor chip 100 is attached is fixed so that the semiconductor chip 100 to be picked up is positioned on the push-up pins 102. Move the held holding table. Next, position detection of the semiconductor chip 100 to be peeled, mark detection for discriminating good / defective products, and the like are performed, and the inside of the backup holder 104 is pulled by vacuum, and the adhesive tape 101 is sucked onto the upper surface of the backup holder 104. And fix it. In this state, the pin holder 103 to which the push-up pins 102 are attached is raised, the push-up pins 102 are made to project from the upper surface of the backup holder 104, and the semiconductor chip 100 is pushed up from the back side with the adhesive tape 101 interposed. The pushed up semiconductor chip 100 is sucked by the suction collet 105 and supplied to the mounting process.

  In recent years, in order to incorporate a semiconductor chip into, for example, a card-like thin package, it is strongly desired to reduce the thickness of the semiconductor chip. By polishing, grinding, and etching the back surface of the semiconductor wafer, the semiconductor chip can be reduced to 100 μm or less. It is thin.

  The problem of the crack when the thickness of the semiconductor chip becomes 100 μm or less will be described in more detail with reference to FIGS. 56 and 57.

When the thickness of the semiconductor chip is extremely thin as described above, even if the outer peripheral portion (particularly, a corner portion) of the semiconductor chip 100 is peeled off from the adhesive tape 101, the adhesive tape 101 is moved faster than the speed at which the push-up pins 102 rise. Since the peeling speed is slower, the semiconductor chip 100 warps in a concave shape before peeling as shown in FIG. 56A, and eventually leads to a crack as shown in FIG. 56B. Further, as shown in FIG. 57 (a), when the rear surface of the semiconductor chip 100 is pushed up by the push-up pins 102 with the adhesive tape 101 interposed therebetween, the semiconductor chip 100 is pushed up with the semiconductor chip 100 in a state where only the corner portions are peeled off. A crack may enter a contact portion with the pin 102, or the push-up pin 102 may penetrate as shown in FIG. 57B, leading to a chip crack. When the thickness of the semiconductor chip is 100 μm or more, such a phenomenon hardly occurs because the strength (the thickness direction) of the semiconductor chip is stronger than the adhesive force between the semiconductor chip 100 and the adhesive tape 101.
JP-A-2003-17513 (FIGS. 1, 2 and description thereof)

  As described above, when the semiconductor chip is thinned, the bending strength of the semiconductor chip becomes low, and cracks and chippings occur in the conventional adhesive tape peeling mechanism and the conventional peeling method and the conventional semiconductor chip pickup device and the conventional pickup method. Therefore, improvement in not only these mechanisms, devices, and methods but also semiconductor device manufacturing apparatuses and semiconductor device manufacturing methods provided with these mechanisms, devices, and methods cannot be avoided.

  In particular, when an adhesive, an adhesive sheet or an adhesive film is attached to the back surface of the semiconductor chip or the surface on which the element is formed, the load at the time of peeling increases, the frequency of cracks increases, and as a result, the quality of the semiconductor device deteriorates and There is a problem that the yield is reduced.

  The present invention has been made in view of such circumstances, and an object of the present invention is to reduce defects such as cracks and chipping of a semiconductor chip to manufacture a high-quality semiconductor device and also suppress a decrease in manufacturing yield. It is an object of the present invention to provide a semiconductor manufacturing apparatus having an adhesive tape peeling mechanism and a method of manufacturing a semiconductor device suitable for a stacked MCP (Multi Chip Package) product using the semiconductor manufacturing apparatus.

According to the present invention,
A peeling mechanism that peels off the adhesive tape adhered on the element forming surface of the singulated semiconductor wafer composed of a plurality of semiconductor chips having an adhesive layer attached to the back surface,
A semiconductor manufacturing apparatus is provided, wherein the peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas in a peeling direction of the adhesive tape.

According to the present invention,
Equipped with a peeling mechanism for peeling off the adhesive tape adhered on the element forming surface of the semiconductor wafer that has been singulated by bonding an adhesive layer over the entire back surface,
The peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas with respect to a peeling direction of the adhesive tape, and cuts the adhesive layer. A semiconductor manufacturing apparatus having means is provided.

According to the present invention,
Equipped with a peeling mechanism that peels off the adhesive tape adhered on the element forming surface of the semiconductor wafer on which the adhesive layer is stuck on the entire back surface,
The peeling mechanism has a suction unit that sucks and fixes the semiconductor wafer with a porous material separated into at least two suction areas in a peeling direction of the adhesive tape, and cuts the semiconductor wafer into individual pieces. A semiconductor manufacturing apparatus is provided, which has a cutting unit for singulating and cutting the adhesive layer.

According to the present invention,
A peeling mechanism for peeling off the adhesive tape adhered to the element forming surface of the singulated semiconductor wafer composed of a plurality of semiconductor chips having an adhesive layer attached to the element forming surface,
A semiconductor manufacturing apparatus is provided, wherein the peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas in a peeling direction of the adhesive tape.

According to the present invention,
Equipped with a peeling mechanism for peeling the adhesive tape adhered to the element forming surface of the semiconductor wafer via an adhesive layer,
The peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas with respect to a peeling direction of the adhesive tape, and the adhesive layer and the semiconductor wafer. And a semiconductor manufacturing apparatus having a cutting means for cutting the semiconductor device into a semiconductor chip shape.

According to the present invention,
Equipped with a peeling mechanism for peeling the adhesive tape formed through the adhesive layer on the element forming surface of the singulated semiconductor wafer,
The peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas with respect to a peeling direction of the adhesive tape, and cuts the adhesive layer. A semiconductor manufacturing apparatus having means is provided.

According to the present invention,
Equipped with a peeling mechanism to peel off the adhesive tape adhered to the element formation surface of the semiconductor wafer,
The peeling mechanism has a suction unit that sucks and fixes the semiconductor wafer with a porous material separated into at least two suction areas in a peeling direction of the adhesive tape, and cuts the semiconductor wafer into individual pieces. A semiconductor manufacturing apparatus having a cutting means for singulation is provided.

According to the present invention,
It comprises a step of peeling off the adhesive tape adhered on the singulated semiconductor wafer composed of a plurality of semiconductor chips having an adhesive layer attached to the back surface,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to fix the semiconductor wafer by suction.

According to the present invention,
A step of peeling the adhesive tape adhered on the semiconductor wafer, which has been singulated and the adhesive layer is stuck on the entire back surface,
Cutting the adhesive layer after separating the adhesive tape so that the adhesive layer is separated for each semiconductor chip,
The step of peeling off the adhesive tape,
Via a porous material separated into at least two suction areas with respect to the peeling direction of the adhesive tape, suction-fixing the semiconductor wafer with at least two systems of suction paths corresponding to the suction areas,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to suction-fix the semiconductor wafer, wherein the cutting of the adhesive layer is performed in parallel with the control of switching two or more vacuum pipes of the at least two suction areas in accordance with the cutting state. A method of manufacturing a semiconductor device is provided.

According to the present invention,
A step of peeling the adhesive tape adhered onto the semiconductor wafer on which the adhesive layer is stuck on the entire back surface,
And cutting the semiconductor wafer and the adhesive layer so as to separate the semiconductor chip and each semiconductor chip after peeling the adhesive tape,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to suction-fix the semiconductor wafer, wherein the cutting of the semiconductor wafer and the adhesive layer switches two or more vacuum pipes of the at least two suction areas in accordance with the cutting state. A method for manufacturing a semiconductor device, which is performed in parallel with control, is provided.

According to the present invention,
A step of peeling off the adhesive tape bonded to the element forming surface of the singulated semiconductor wafer via an adhesive layer,
Cutting the adhesive layer after separating the adhesive tape so that the adhesive layer is separated for each semiconductor chip,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to suction-fix the semiconductor wafer, wherein the cutting of the adhesive layer is performed in parallel with the control of switching two or more vacuum pipes of the at least two suction areas in accordance with the cutting state. A method of manufacturing a semiconductor device is provided.

According to the present invention,
Comprising a step of peeling off the adhesive tape adhered to the singulated semiconductor wafer composed of a plurality of semiconductor chips each having an adhesive layer attached to the element forming surface,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. A step of switching the suction path to suction-fix the semiconductor wafer,
A method for manufacturing a semiconductor device is provided.

According to the present invention,
A step of peeling off the adhesive tape adhered to the semiconductor wafer having the adhesive layer adhered to the element forming surface,
And cutting the semiconductor wafer and the adhesive layer so as to separate the semiconductor chip and each semiconductor chip after peeling the adhesive tape,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to fix the semiconductor wafer by suction,
A method of manufacturing a semiconductor device is provided, in which cutting of the semiconductor wafer and the adhesive layer is performed in parallel with control for switching two or more vacuum pipes of the at least two suction areas in accordance with the cutting state.

Furthermore, according to the present invention,
A step of peeling the adhesive tape adhered to the semiconductor wafer,
Cutting the semiconductor wafer after separating the adhesive tape so as to separate each semiconductor chip,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path and suction-fixing the semiconductor wafer. The cutting of the semiconductor wafer is performed in parallel with the control of switching two or more vacuum pipes of the at least two suction areas in accordance with the cutting state. A method for manufacturing a semiconductor device is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the chip crack by the pick-up which has become a problem with the thinning of the semiconductor chip can be prevented, and the damage of the semiconductor chip at the push-up pin contact portion, which has been a problem with the conventional push-up pin, can be prevented. Can be prevented. Further, it is possible to easily create a stacked MCP product in which semiconductor chips are stacked.

Embodiment of the Invention

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First, a first embodiment will be described with reference to FIGS.
In this embodiment, a semiconductor manufacturing apparatus will be described by taking a die bonder having an adhesive tape peeling mechanism and a semiconductor chip pickup mechanism as an example.

  FIG. 1 is a perspective view of a semiconductor wafer used in this embodiment and a cross-sectional view of a portion taken along line AA of the perspective view. FIG. 2 is a perspective view of a semiconductor manufacturing apparatus according to a first embodiment of the present invention. FIG. 3 is a perspective view showing a schematic configuration, and FIG. 3 is a plan view of a wafer suction portion used in a peeling mechanism and a pickup mechanism of the semiconductor manufacturing apparatus shown in FIG. 2, and a cross-sectional view of a portion along line 3H-3H in this plan view. 4 is a plan view illustrating the positional relationship between the wafer suction unit and the singulated semiconductor wafer of the semiconductor manufacturing apparatus shown in FIG. 2, and FIG. 5 is a cross-sectional view illustrating the operation of the die bonder peeling mechanism of FIG. 6, FIG. 6 illustrates a configuration example of the auxiliary plate, FIGS. 7 and 8 are cross-sectional views illustrating the operation of the pickup mechanism of the die bonder illustrated in FIG. 2, and FIG. Schematic diagram illustrating an example of a-up mounting process, 10 to 13 are sectional views showing another example of a picked-up semiconductor chip mounting process.

  In the semiconductor wafer shown in FIG. 1, an adhesive tape 24 is coated on the entire surface of an element forming surface having an element forming region as a surface protection tape, and an adhesive layer 29 is formed on the back surface. In the present embodiment, the adhesive layer 29 is formed separately for each semiconductor chip.

  The die bonder shown in FIG. 2 includes a peeling mechanism for peeling an adhesive tape, a pickup mechanism for picking up a semiconductor chip, a transfer mechanism for transferring the picked up semiconductor chip onto a lead frame, and a transfer mechanism for transferring the lead frame. The peeling mechanism includes a holding table 3, a TV camera 4, a peeling claw 21, an auxiliary plate 22, and a suction device 20. The pickup mechanism has a holding table 3, a TV camera 4, a suction collet 10, and a suction device 20. The peeling mechanism and the pickup mechanism share the holding table 3, the TV camera 4, and the suction device 20.

  The holding table 3 includes a wafer suction unit 2 formed of a porous material (eg, a film-shaped ceramic material / glass epoxy substrate) separated (blocked) into at least two suction areas in a direction in which the adhesive tape is peeled off. Having. In this embodiment, as shown in FIG. 3, the wafer suction unit 2 has seven suction areas 2-1 to 2-7. Connection holes 23-1 to 23-7 for connecting vacuum pipes are provided below the suction areas 2-1 to 2-7. The semiconductor chip 1 singulated from the semiconductor wafer on which the elements have been formed and attached to the adhesive tape 24 (see FIG. 5) is bonded to the wafer suction portion 2 on the side opposite to the element forming surface. It is adsorbed and fixed via the agent layer 29. At this time, as shown in FIGS. 4A and 4B, if the longitudinal direction of each of the suction areas 2-1 to 2-7 is arranged so as to be orthogonal to the peeling direction, each semiconductor at the time of pickup is obtained. The position of the chip 1 can be easily recognized. On the other hand, as shown in FIGS. 4A and 4C, in the direction in which the diagonal line of each semiconductor chip 1 is parallel to the peeling direction (when the semiconductor chip is a square, it has an inclination of 45 degrees). If it arrange | positions, since peeling of the adhesive tape 24 will start from the corner part of the semiconductor chip 1, it can peel easily. Which arrangement should be selected may be determined in consideration of the size and thickness of the semiconductor chip 1, the adhesive strength of the adhesive tape 24, and the like.

  The holding table 3 moves the individual semiconductor chips 1 onto the suction device 20 by moving the semiconductor wafer in the XY directions. The TV camera 4 monitors the surface of the semiconductor chip 1. The suction device 20 is installed below the holding table 3, and has at least two vacuum (suction) pipes provided corresponding to the suction areas 2-1 to 2-7 of the wafer suction unit 2. It has two corresponding vacuum (suction) pumps, a switching valve for switching vacuum piping, a control device for controlling the switching valve, and the like.

  A transfer mechanism for transferring the semiconductor chip 1 onto the lead frame includes a bonding tool 8, a suction collet 10, a position correction stage 11, a bonding head 12, and the like. The suction collet 10 is also used at the time of pickup, and sucks the semiconductor chip 1 peeled off from the adhesive tape 24 and transfers it to the position correction stage 11. The position of the semiconductor chip 1 is corrected on the position correction stage 11. The semiconductor chip 1 whose position has been corrected is transferred onto the lead frame by the bonding head 8.

  Further, the transport mechanism for transporting the lead frame includes a lead frame supply unit 5, a lead frame transport device 6, a paste supply device 7, a lead frame storage unit 9, and the like. The lead frame supply unit 5 accommodates a lead frame before die bonding, and sequentially sends the lead frame to the lead frame transport device 6. The paste supply device 7 applies a conductive paste to the bed portion of the lead frame transported by the lead frame transport device 6. In addition, the lead frame storage unit 9 stores a lead frame for which die bonding has been completed.

  The overall schematic operation of this die bonder is as follows. First, a plurality of semiconductor chips 1 are formed by singulating the semiconductor wafer on which element formation has been completed, and these semiconductor chips 1 are transferred and adhered to an adhesive tape 24 and mounted on the holding table 3. Alternatively, a cut groove is formed along the dicing line (or chip dividing line) from the element forming surface side on the wafer on which the element formation has been completed by a method called pre-dicing, and an adhesive tape 24 is attached to the element forming surface side. After the attachment, the back surface of the wafer is diced into pieces by grinding at least until the front kerf is reached, and the semiconductor chip 1 formed thereon is mounted on the holding table 3. Next, the semiconductor chip 1 is directly sucked and fixed by the suction device 20, and the adhesive tape is peeled off using the peeling claw 21 and the auxiliary plate 22. Subsequently, the holding table 3 is moved in the X and Y directions, the surface of the semiconductor chip 1 is monitored using the TV camera 4, and the image data obtained by this monitor is binarized or multi-valued to detect the position of the semiconductor chip 1 and Mark detection for discriminating good / defective products is performed. Then, the semiconductor chip 1 is sucked by the suction collet 10 to be picked up while being sucked by the suction device 20 by vacuum (depending on the size and thickness of the semiconductor chip, it is not always necessary to suck by vacuum). The semiconductor chip 1 is transferred onto the lead frame by the bonding head 8 after adjusting the position of the semiconductor chip 1 and the arrangement of the front and back surfaces as necessary.

  Next, after the pickup is completed, the holding table 3 is moved to the position of the semiconductor chip 1 to be picked up next. Further, these operations are repeated.

  On the other hand, the lead frame supply unit 5 sequentially sends out the lead frames to the lead frame transport device 6. A conductive paste is applied from a paste supply device 7 to a bed portion of the lead frame transported by the lead frame transport device 6. Then, the semiconductor chip 1 transferred by the bonding head 8 is mounted on a bed portion of a lead frame (this is referred to as die bonding). The lead frame for which die bonding has been completed is housed in the lead frame housing unit 9. The above operation is sequentially repeated.

  Next, the peeling mechanism of the adhesive tape and the pickup mechanism of the semiconductor chip in the die bonder as described above, and the peeling method and the picking method using these will be described in detail with reference to FIGS.

  (1) First, an adhesive tape 24 is adhered to the element formation surface, and a singulated semiconductor wafer is prepared. The semiconductor wafer is composed of semiconductor chips 1 each having a back surface covered with an adhesive layer 29. Further, as described above, the adhesive tape is used for a surface protection tape or a support tape of a semiconductor wafer.

  (2) The singulated semiconductor wafer is set on the holding table 3.

  (3) The holding table 3 is provided with two systems of vacuum pipes 25A and 25B, pipe switching valves 26-A to 26-G, and two vacuum pumps 27A and 27B. 24 is peeled off. First, the semiconductor wafer bonded to the adhesive tape 24 is suction-fixed by vacuum suction using the first system vacuum pipe 25A and the first vacuum pump 27B.

  (4) In this state, peeling of the adhesive tape 24 is started. At the time of peeling, a tape for peeling is adhered to the end side of the adhesive tape 24, the end of the tape for peeling is held by the peeling claw 21, and the auxiliary plate 22 for assisting peeling is placed on the adhesive tape 24. The auxiliary plate 22 is used to hold the top surface of the adhesive tape 24 with the auxiliary plate 22 while bending the adhesive tape 24. The peeling claw 21 is used to set one end of the adhesive tape 24 in the direction of the arrow in the drawing at a speed of 0.1 mm to 100 mm / sec. Is pulled at a speed of 0.1 mm to 10 mm / sec.

  (5) At this time, the strength of pulling the peeling claw 21 may be increased or decreased, or the peeling claw 21 and the auxiliary plate 22 may be moved at a constant speed for peeling. Further, the operation of holding the upper surface of the adhesive tape 24 with the auxiliary plate 22 after the pulling by a predetermined distance with the peeling nail 21 may be repeated. Then, when a part of the adhesive tape 24 near the suction areas 2-1 to 2-7 adjacent to the wafer suction unit 2 is peeled off, the second system vacuum piping is performed by the switching valves 26-A to 26-G. Switching to 25B, the semiconductor chip 1 in the separated suction area is sucked and fixed by the second vacuum pump 27B. FIG. 5 shows a state in which the separation has progressed to the boundary area between the suction area 2-1 and the suction area 2-2, and the switching valve 26-A has been switched.

  (6) Similarly, the switching valves 26-B to 26-G are sequentially switched in accordance with the peeling of the adhesive tape 24. Then, in a state where the adhesive tape 24 is completely peeled off, each semiconductor chip 1 is transferred from the adhesive tape 24 to the wafer suction part 2 and is transferred by the second vacuum pump 27B through the second system vacuum pipe 25B. Thus, each semiconductor chip 1 is sucked and fixed. The auxiliary plate 22 may have a tip with a radius as shown in FIG. 6 (a) or a tip with an acute angle as shown in FIG. 6 (b). The shape of the tip is determined by the thickness, adhesive strength, flexibility and the like of the adhesive tape 24.

  (7) Next, position detection of the semiconductor chip 1 and non-defective product detection are performed.

  (8) Thereafter, pickup of the individual semiconductor chips 1 from the wafer suction unit 2 is started. Immediately after the start of the pick-up, each semiconductor chip 1 is sucked and fixed by the second vacuum pump 27B in the second system vacuum pipe 25B, and in this state, the semiconductor chip 1 is picked up using only the suction force using the suction collet 10. .

  (9) Then, at the time when the pick-up progresses and reaches the vicinity of the boundary of the next suction area to be picked up next, the switching valve is switched to switch to the first system vacuum pipe 25A, and the first vacuum pump 27A is switched. The suction area picked up is sucked using. FIG. 7 shows a state in which the pickup is almost finished up to the suction area 2-1 and the switching valve 26-A corresponding to the suction area 2-1 is closed.

  (10) As a result, the semiconductor chip 1 is picked up and a part of the wafer suction part 2 is exposed, so that the suction force of the second vacuum pump 27B is prevented from lowering, and the exposed wafer suction part is sucked. Defective chips remaining in the portion 2 and chips in the peripheral portion of the wafer that does not become a product can be sucked and fixed.

  Note that, when the pickup proceeds and picks up the semiconductor chip in the suction area, the switching valve may be closed to stop the suction as shown in FIG. FIG. 8 shows a state where the pickup advances to the suction area 2-4 and the switching valves 26-A to 26-C corresponding to the suction areas 2-1 to 2-3 are closed.

  (11) Thereafter, as shown in FIG. 9, die bonding is performed on the lead frame. FIG. 9 schematically illustrates a step (a) of peeling the adhesive tape 24, a step (b) of picking up, and a step (c) of mounting the semiconductor chip 1 on the lead frame 13 with the conductive paste 14 or the like.

  (12) Then, the defective product and the semiconductor chip which does not become a product on the outer peripheral portion of the wafer are discarded.

  According to the configuration and the method as described above, the singulated semiconductor wafer can be effectively suction-fixed with an optimum suction force according to the peeling position of the adhesive tape and the pickup state of the semiconductor chip. Cracking and chipping of the semiconductor chip at the time of peeling of the adhesive tape and at the time of pickup, which are problems due to the reduction in thickness, can be prevented. Further, since the pickup is performed only by suction, damage to the semiconductor chip at the contact portion of the push-up pin, which has been a problem in the pickup by the conventional push-up pin, can be prevented. Further, since the adhesive layer is formed, it is possible to easily produce a stacked MCP product in which semiconductor chips are stacked.

  In the prior art, when the thickness of the semiconductor chip becomes 50 μm or less, cracks frequently occur during pickup of the semiconductor chip (100 pcs / 100 pcs). However, according to this embodiment, the thickness of the semiconductor chip is 50 μm or less. However, the occurrence of cracks could be reduced to a level that could be almost ignored (0/100 pcs).

  In the above embodiment, the die bonder has been described as an example. However, the present invention can be applied to other semiconductor manufacturing apparatuses that require an adhesive tape peeling mechanism or a semiconductor chip pickup device. As another semiconductor manufacturing apparatus, for example, as shown in FIG. 10, a picker for picking up individual semiconductor chips 1 and packing them in a tray 15 after peeling off an adhesive tape 24, as shown in FIG. After peeling, the individual semiconductor chips 1 are picked up and flip-chip bonded to be mounted on the mounting substrate 16 by flip-chip connection. As shown in FIG. 13. A film bonding bonder for picking up and mounting on a thermoplastic film substrate 17, and as shown in FIG. 13, after peeling off the adhesive tape 24, picking up the individual semiconductor chips 1 and using the heating tools 19a, 19b. There is an inner lead bonder or the like mounted on the TAB tape 18 by using the same.

  Next, a second embodiment will be described with reference to FIGS.

  FIG. 14 is a perspective view of a semiconductor wafer used in this embodiment and a cross-sectional view taken along a line BB of this perspective view. FIG. FIG. 4 is a process cross-sectional view for explaining a process from a step of removing a conductive tape to a step of picking up a semiconductor chip.

  In the semiconductor wafer shown in FIG. 14, an adhesive tape 34 is coated on the entire surface of an element forming surface having an element forming region as a surface protection tape, and an adhesive layer 39 such as an adhesive sheet or an adhesive film is formed on the back surface. . The adhesive layer 39 is formed on the entire surface of the semiconductor wafer.

First, the adhesive tape 34 is peeled off from the surface of the semiconductor wafer on the holding table 33 by using the peeling claw 31 and the auxiliary plate 32 while being directly suction-fixed by the suction device. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is switched while the adhesive tape 34 is peeled off. The adhesive tape is peeled off (FIG. 15A). Subsequently, the adhesive layer 39 is cut to a chip size using a cutting means 35 such as a laser or a blade. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is switched according to the cutting situation to thereby form an adhesive layer. 39 is cut (FIG. 15B). Thereafter, the pickup of the individual semiconductor chips 30 is started from the wafer suction unit. Immediately after the start of the pick-up, each semiconductor chip 30 picks up only by the attraction force using the attraction collet 36 (FIG. 15C). Each semiconductor chip 30 picked up is bonded to a lead frame or the like. The laser as the cutting means includes a YAG laser, a CO ₂ laser, and a single pulse laser.

  As described above, according to this embodiment, the singulated semiconductor wafer can be effectively suction-fixed with an optimum suction force according to the peeling position of the adhesive tape and the pickup state of the semiconductor chip. It is possible to prevent cracking and chipping of the semiconductor chip at the time of peeling of the adhesive tape or at the time of picking up, which is a problem due to the reduction in thickness of the semiconductor chip. Further, since the pickup is performed only by suction, damage to the semiconductor chip at the contact portion of the push-up pin, which has been a problem in the pickup by the conventional push-up pin, can be prevented. Further, since the adhesive layer is formed, it is possible to easily produce a stacked MCP product in which semiconductor chips are stacked.

  Next, a third embodiment will be described with reference to FIGS.

  This embodiment is characterized in that an adhesive layer is formed on an element formation surface for each semiconductor chip constituting a semiconductor wafer. FIG. 16 is a perspective view of a semiconductor wafer used in this embodiment and a cross-sectional view of a portion taken along the line CC of this perspective view. FIG. 17 is implemented using the semiconductor manufacturing apparatus in this embodiment. FIG. 4 is a process cross-sectional view for explaining a process from a step of removing an adhesive tape to a step of picking up a semiconductor chip.

  In the semiconductor wafer shown in FIG. 16, an adhesive tape 44 is coated on the entire surface of the element formation surface having the element formation region as a surface protection tape, and an adhesive layer 49 is formed on the back surface. The adhesive layer 49 is interposed between the semiconductor wafer and the adhesive tape 44 and is formed separately for each semiconductor chip.

  First, the adhesive tape 44 is peeled off from the surface of the semiconductor wafer using the peeling claw 41 and the auxiliary plate 42 while directly sucking and fixing the semiconductor wafer on the holding table 43 by the suction device. At this time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is switched according to the peeling state of the adhesive tape 44. To peel off the adhesive tape (FIG. 17A). Thereafter, pickup of the individual semiconductor chips 40 from the wafer suction unit is started. Immediately after the start of the pick-up, each semiconductor chip 40 picks up only by the attraction force using the attraction collet 46 (FIG. 17B). Each semiconductor chip 40 picked up is bonded to a lead frame or the like.

  As described above, according to this embodiment, the singulated semiconductor wafer can be effectively suction-fixed with an optimum suction force according to the peeling position of the adhesive tape and the pickup state of the semiconductor chip. It is possible to prevent cracking and chipping of the semiconductor chip at the time of peeling of the adhesive tape or at the time of picking up, which is a problem due to the reduction in thickness of the semiconductor chip. Further, since the pickup is performed only by suction, damage to the semiconductor chip at the contact portion of the push-up pin, which has been a problem in the pickup by the conventional push-up pin, can be prevented. Further, since the adhesive layer is formed, it is possible to easily produce a stacked MCP product in which semiconductor chips are stacked.

  Next, a fourth embodiment will be described with reference to FIGS.

  This embodiment is characterized in that an adhesive layer is formed on the back surface opposite to the element formation surface of a semiconductor wafer that has not yet been singulated. FIG. 18 is a perspective view of a semiconductor wafer used in this embodiment and a cross-sectional view of a portion taken along line DD of the perspective view. FIG. FIG. 4 is a process cross-sectional view for explaining a process from a step of removing a conductive tape to a step of picking up a semiconductor chip.

  First, the adhesive tape 54 is peeled from the surface of the semiconductor wafer by using the peeling claw 51 and the auxiliary plate 52 while directly sucking and fixing the semiconductor wafer by the suction device on the holding table 53. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is set according to the peeling state of the adhesive tape 54. The adhesive tape is peeled off by switching (FIG. 19A). Subsequently, the semiconductor wafer and the adhesive layer 59 are cut into chip sizes by using a cutting means 55 such as a laser or a blade. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is switched according to the cutting situation to thereby form an adhesive layer. 59 is cut (FIG. 19B). Thereafter, the pickup of the individual semiconductor chips 50 is started from the wafer suction section. Immediately after the start of the pickup, each semiconductor chip 50 is picked up using only the suction force using the suction collet 56 (FIG. 19C). Each semiconductor chip 50 picked up is bonded to a lead frame or the like.

  As described above, according to this embodiment, the singulated semiconductor wafer can be effectively suction-fixed with an optimum suction force according to the peeling position of the adhesive tape and the pickup state of the semiconductor chip. It is possible to prevent cracking and chipping of the semiconductor chip at the time of peeling of the adhesive tape or at the time of picking up, which is a problem due to the reduction in thickness of the semiconductor chip. Further, since the pickup is performed only by suction, damage to the semiconductor chip at the contact portion of the push-up pin, which has been a problem in the pickup by the conventional push-up pin, can be prevented. Further, since the adhesive layer is formed, it is possible to easily produce a stacked MCP product in which semiconductor chips are stacked.

  Next, a fifth embodiment of the present invention will be described with reference to FIGS.

  This embodiment is characterized in that a semiconductor wafer which has not yet been divided into pieces and has no adhesive layer formed thereon is handled. FIG. 20 is a perspective view of a semiconductor wafer used in this embodiment and a cross-sectional view of a portion along a line EE in the perspective view. FIG. 21 is a diagram showing an adhesive used in the semiconductor manufacturing apparatus of this embodiment. FIG. 4 is a process cross-sectional view for explaining a process from a step of removing a conductive tape to a step of picking up a semiconductor chip.

  First, the adhesive tape 64 is peeled off from the surface of the semiconductor wafer using the peeling claw 61 and the auxiliary plate 62 while directly sucking and fixing the semiconductor wafer on the holding table 63 by the suction device. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is set according to the peeling state of the adhesive tape 64. Switch to peel off the adhesive tape (FIG. 21A). Subsequently, the semiconductor wafer is cut into chip sizes by using cutting means 65 such as a laser or a blade. At this time, the semiconductor wafer is vacuum-fixed on a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and cut while switching the pipe system of each porous block according to the cutting situation. (FIG. 21B). Thereafter, the pickup of the individual semiconductor chips 60 from the wafer suction unit is started. Immediately after the start of the pickup, each semiconductor chip 60 is picked up using only the suction force using the suction collet 66 (FIG. 21C). Each picked-up semiconductor chip 60 is bonded to a lead frame or the like.

  As described above, according to this embodiment, the peeling of the adhesive tape, the separation into the semiconductor chips, and the pickup are performed while the semiconductor wafer is effectively suction-fixed with the optimal suction force. Cracking and chipping of the semiconductor chip at the time of peeling of the adhesive tape and at the time of pickup, which are problems due to the reduction in thickness, can be prevented. Further, since the pickup is performed only by suction, damage to the semiconductor chip at the contact portion of the push-up pin, which has been a problem in the pickup by the conventional push-up pin, can be prevented.

  Next, a sixth embodiment will be described with reference to FIGS.

  This embodiment is characterized in that a semiconductor wafer which has not yet been singulated and has an adhesive layer formed on its element formation surface is handled. FIG. 22 is a perspective view of a semiconductor wafer used in this embodiment and a cross-sectional view of a portion taken along line FF of this perspective view. FIG. 23 is implemented using the semiconductor manufacturing apparatus in this embodiment. It is process sectional drawing explaining the process from the peeling process of an adhesive tape to the process of picking up a semiconductor chip.

  First, the adhesive tape 74 is peeled from the surface of the semiconductor wafer by using the peeling claw 71 and the auxiliary plate 72 while directly sucking and fixing the semiconductor wafer by the suction device on the holding table 73. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is switched while the adhesive tape 74 is peeled off. The adhesive tape is peeled off (FIG. 23A). Subsequently, the semiconductor wafer and the adhesive layer 79 are cut to a chip size by using a cutting means 75 such as a laser or a blade. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the adhesive layer is switched while switching the piping system of each porous block according to the cutting situation. 79 and the semiconductor wafer are cut (FIG. 23B). Thereafter, pickup of the individual semiconductor chips 70 from the wafer suction unit is started. Immediately after the start of the pickup, each semiconductor chip 70 is picked up using only the suction force using the suction collet 76 (FIG. 23C). Each semiconductor chip 70 picked up is bonded to a lead frame or the like.

  As described above, according to this embodiment, it is possible to effectively suction-fix with an optimum suction force according to the peeling position of the adhesive tape from the semiconductor wafer, the individualization of the semiconductor chips, and the state of the pickup. Thereby, cracking and chipping of the semiconductor chip at the time of peeling of the adhesive tape or at the time of pickup, which is a problem due to the thinning of the semiconductor chip, can be prevented. Further, since the pickup is performed only by suction, damage to the semiconductor chip at the contact portion of the push-up pin, which has been a problem in the pickup by the conventional push-up pin, can be prevented. Further, since the adhesive layer is formed, it is possible to easily produce a stacked MCP product in which semiconductor chips are stacked.

  Next, a seventh embodiment will be described with reference to FIGS.

  FIG. 24 is a perspective view of a semiconductor wafer used in this embodiment and a cross-sectional view of a portion along the line GG of this perspective view. FIG. 25 is implemented using the semiconductor manufacturing apparatus in this embodiment. It is process sectional drawing explaining the process from the peeling process of an adhesive tape to the process of picking up a semiconductor chip.

  In the semiconductor wafer shown in FIG. 24, an adhesive tape 84 is formed on the entire surface of the element forming surface having the element forming region via an adhesive layer 89 such as an adhesive sheet or an adhesive film. Semiconductor wafers are already singulated into semiconductor chips.

  First, the adhesive tape 84 is peeled from the surface of the semiconductor wafer by using the peeling claw 81 and the auxiliary plate 82 while directly sucking and fixing the semiconductor wafer by the suction device on the holding table 83. At this time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is switched while the adhesive tape 84 is peeled off. The adhesive tape is peeled off (FIG. 25A). Subsequently, the adhesive layer 89 is cut to a chip size by using a cutting means 85 such as a laser or a blade. At this time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the adhesive layer 89 is switched while switching the piping system of each porous block according to the cutting situation. Is cut (FIG. 25B). Thereafter, the pickup of the individual semiconductor chips 80 from the wafer suction part is started. Immediately after the start of the pickup, each semiconductor chip 80 is picked up using only the suction force using the suction collet 86 (FIG. 25C). Each semiconductor chip 80 picked up is bonded to a lead frame or the like.

  As described above, according to this embodiment, a semiconductor wafer that has been singulated can be effectively suction-fixed with an optimal suction force according to the peeling position of the adhesive tape and the pickup state of the semiconductor chip. Thereby, cracking and chipping of the semiconductor chip at the time of peeling of the adhesive tape or at the time of pickup, which is a problem due to the thinning of the semiconductor chip, can be prevented. Further, since the pickup is performed only by suction, damage to the semiconductor chip at the contact portion of the push-up pin, which has been a problem in the pickup by the conventional push-up pin, can be prevented. Further, since the adhesive layer is formed, it is possible to easily manufacture a stacked MCP product in which semiconductor chips are stacked.

  Hereinafter, various configuration examples of the wafer suction unit will be described with reference to the drawings.

  FIGS. 26 to 28 show various configuration examples of the wafer suction unit applied in the above-described embodiment. The wafer suction unit 2 shown in FIG. 26 is obtained by separating a porous material into two suction areas in the direction in which the adhesive tape is peeled off. The wafer suction unit 2 shown in FIG. 27 is obtained by separating a porous material into five suction areas in the direction in which the adhesive tape is peeled off. In the wafer suction unit 2 shown in FIG. 28, the porous material is separated into nine suction areas in the peeling direction of the adhesive tape.

  The wafer suction unit 2 shown in each of FIGS. 29 to 32 not only divides the porous material into a plurality in the peeling direction of the adhesive tape, but also divides the porous material into two in a direction orthogonal to the peeling direction. 4, 10, 14, and 18 suction areas are provided. In addition, the wafer suction unit 2 shown in each of FIGS. 33 to 35 not only divides the porous material into a plurality of pieces in the peeling direction of the adhesive tape, but also divides the porous material into three and four parts in a direction orthogonal to the peeling direction. By dividing into five, 27, 32, and 41 suction areas are provided, respectively.

  The wafer suction part 2 shown in FIGS. 36 to 42 includes plates 28 provided on a porous material and having a large number of through holes, and the semiconductor wafer 1 singulated into pieces via these plates 28. Adsorbs. In FIG. 36, the porous material is separated into two suction areas in the peeling direction of the adhesive tape, separated into five areas in FIG. 37, and separated into seven areas in FIG. 38. Also, in FIG. 39, the porous material is divided into four suction areas by being divided into two in the peeling direction of the adhesive tape and the direction perpendicular to this direction, and is separated into ten suction areas in FIG. In FIG. 41, it is divided into 14 suction areas, and in FIG. 42, it is divided into four in the direction orthogonal to the peeling direction and separated into 28 suction areas.

  The wafer suction unit 2 shown in FIGS. 43 to 48 includes a plate 30 provided on a porous material so as to have a through hole corresponding to each semiconductor chip, and suctions individual semiconductor chips via the plate 30. Things. In FIG. 43, the porous material is separated into two adsorption areas with respect to the peeling direction of the adhesive tape, in FIG. 44, into five areas, and in FIG. 45, into seven areas. Also, in FIG. 46, the porous material is divided into four suction areas by being divided into two in the peeling direction of the adhesive tape and a direction perpendicular to this direction, and is separated into ten suction areas in FIG. At 48, it is separated into 14 suction areas.

  Even with such a configuration, it is basically the same as the wafer suction portion shown in FIG. 2, and the size and thickness of the semiconductor chip 1 and the adhesive strength, thickness, flexibility, etc. of the adhesive tape 24 are considered. And select the optimal structure.

  Next, a wafer ring applicable to the present invention will be described.

  FIG. 49 is a perspective view of a wafer ring on which a semiconductor wafer is mounted and a cross-sectional view of a portion taken along line JJ of the perspective view. The adhesive tape 24 is attached to the wafer ring 35, and the singulated semiconductor wafer is attached to the adhesive tape 24. The wafer ring 35 and the adhesive tape 24 are used in the step of grinding the back surface of the semiconductor wafer 1. Here, the adhesive tape 24 preferably protrudes from the outer peripheral portion of the singulated semiconductor wafer and has a size approximately equal to the diameter of the wafer ring. After grinding the back surface, an adhesive layer is attached to the semiconductor chip 1.

  When peeling the adhesive tape 24 from the semiconductor wafer 1, a peeling tape is adhered to an outer peripheral portion of the adhesive tape 24 attached to the wafer ring 35, and the peeling tape is gripped by a peeling claw, The chip 1 is peeled by being pulled in a direction parallel to the suction surface. Alternatively, the end of the adhesive tape 24 is directly grasped by the peeling claw 21 and pulled in a direction parallel to the suction surface of the semiconductor chip 1 to be peeled. Then, first, the adhesive tape 24 is peeled off from the wafer ring 35, and then, the semiconductor wafer is peeled off. Thereafter, the process proceeds to the pickup process.

  As a result, the force required for peeling the adhesive tape 24 from the semiconductor chip 1 can be made very small. Therefore, when the size of the semiconductor chip 1 is small, or when the surface protection film on the element forming surface of the semiconductor chip 1 is adhered to the adhesive. Even when the adhesion to the tape 24 is very high, or when the surface of the semiconductor chip 1 has large irregularities, it can be peeled off relatively easily. Therefore, the semiconductor chip 1 on the outer peripheral portion does not remain as it is adhered to the adhesive tape 24 due to peeling failure.

  Next, an eighth embodiment of the present invention will be described with reference to FIGS.

  The feature of this embodiment is a semiconductor wafer composed of singulated semiconductor chips, an adhesive layer formed on the entire surface opposite to the element forming surface, and a semiconductor wafer formed on the element forming surface. The present invention is to handle a semiconductor wafer having a formed low dielectric constant insulating film (usually called a low-k film).

  As a material of the low dielectric constant insulating film, for example, when used for a semiconductor device, a fluorine-doped silicon oxide film (3.4 to 4.0) having a lower relative dielectric constant than a silicon oxide film (relative dielectric constant of 3.9 to 4.1). 3.7) is widely used.

Low dielectric constant insulating films can be classified into two types of materials. The first type is a material whose relative dielectric constant is reduced by reducing the density of a silicon oxide film (relative dielectric constant of 3.9 to 4.1), and is MSQ (Methyl Silsesquioxane: CH ₃ —SiO _{1. 5} (relative permittivity 2.7 to 3.0)), H (Hydrogen Silsesquioxane: H-SiO _1.5 (relative permittivity 3.5 to 3.8), porous HSQ (H-SiO _X (relative permittivity) 2.2)) and porous MSQ (CH ₃ —SiO _1.5 (relative dielectric constant: 2.0 to 2.5)), all of which are formed by a coating method, such as organic silica (CH ₃ − SiO _1.5 (relative dielectric constant of 2.5 to 3.0), etc. In this embodiment, a low dielectric constant insulating film called a low-k film has a relative dielectric constant of less than 3.9. The second type is a material having a low polarizability in an organic film, for example, P FE (Polytetrafluoroethylene (relative permittivity 2.1)), PAE (Polyarylether: relative permittivity 2.7 to 2.9), porous PAE (relative permittivity 2.0 to 2.2), BCB (Benzocyclobutene: relative permittivity) Rates of 2.6 to 3.3), etc. Any of these can be formed into a film by a coating method such as spin coating.

  FIG. 50A is a perspective view of a semiconductor wafer used in this embodiment, FIG. 50B is a cross-sectional view taken along line KK in the perspective view of FIG. 50A, and FIG. FIG. 4 is a process cross-sectional view for explaining a step of separating an adhesive tape, a step of cutting and melting an adhesive layer and a low dielectric constant insulating film, and a step of picking up a semiconductor chip, which are performed using the semiconductor manufacturing apparatus according to the embodiment.

  The semiconductor wafer shown in FIG. 50 is divided into semiconductor chips 38 in advance, and an adhesive layer 39 is formed on the surface opposite to the element formation region. The element is sealed with a resin, a low dielectric constant insulating film 210 is formed in contact with the sealing resin, and an adhesive tape 34 is formed on the semiconductor wafer so as to be in contact with the low dielectric constant insulating film 210. The entire surface is covered.

  As shown in FIG. 51, first, the adhesive tape 34 is peeled off from the surface of the semiconductor wafer by using the peeling claw 31 and the auxiliary plate 32 while directly sucking and fixing the semiconductor wafer on the holding table 33 by the suction device. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the piping system of each porous block is switched while the adhesive tape 34 is peeled off. The adhesive tape is peeled off (FIG. 51A). Subsequently, the adhesive layer 39 is cut into a chip size using a cutting means 75 such as a laser or a blade. At that time, the semiconductor wafer is vacuum-fixed to a table divided into two or more vacuum pipes by a porous material divided into two or more parts, and the adhesive layer is switched while switching the piping system of each porous block according to the cutting situation. 39 is cut (FIG. 51 (b)). The peripheral portion of the low dielectric constant insulating film 210 is melted in parallel with each cutting of the adhesive layer 39 or after cutting the adhesive layer 39. In this embodiment, a laser is irradiated to the peripheral portion of the low dielectric constant insulating film 210 at an incident angle θ of 20 ° to 40 ° (FIG. 51C). As a result, the low dielectric constant insulating film 210 once melted adheres to the sealing resin with high adhesion when the temperature reaches the original temperature. As a result, a semiconductor chip in which film peeling does not easily occur can be obtained. When a laser is used as the cutting means 35, the cutting means 35 may be used as it is.

  Thereafter, the individualized semiconductor chips 38 are picked up from the wafer suction unit. Immediately after the start of the pickup, each semiconductor chip 38 is picked up using only the suction force using the suction collet 36 (FIG. 51D). Each semiconductor chip 38 picked up is bonded to a lead frame or the like.

  As described above, according to this embodiment, in addition to the above-described prevention of crack chipping, a semiconductor device having a low-dielectric-constant insulating film that is welded with high adhesion to a sealing resin in an element formation region of each semiconductor chip is provided. Obtainable. The effect of this embodiment will be described with reference to FIGS. FIGS. 52A to 52D and 53 are schematic diagrams of a comparative example, and FIG. 54 is a schematic diagram illustrating the effect of the present embodiment. FIG. 52A is an enlarged view of an end portion of a conventional semiconductor chip separated from a semiconductor wafer using a blade, and FIG. 52B is a diagram showing a thermal cycle test (Thermal cycle) performed on the chip of FIG. Cycle Test (hereinafter, simply referred to as TCT) is an enlarged view of the end after 500 times. FIG. 52 (c) is an enlarged view of an end portion of a conventional semiconductor chip separated from a semiconductor wafer by using a laser, and FIG. 52 (d) is similar to the chip of FIG. FIG. 10 is an enlarged view of an end portion after performing 500 times. When a blade is used, a large number of water bubbles are generated after TCT as shown in FIG. 52 (b), even if the blade is in a good state immediately after cutting as shown in FIG. 52 (a). It turned out that many cracks existed. When laser was used, no abnormality was observed after TCT, but as shown in the plan views of FIGS. 52 (d) and 53, breakdown of the low dielectric constant insulating film was confirmed. After the melting step of this embodiment, as shown in the plan view of FIG. 54, a good low dielectric constant insulating film without peeling was confirmed.

  Although the embodiments of the present invention have been described above, the present invention is not limited to these embodiments, and can be variously modified within the technical scope. Further, these embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent features. For example, in the eighth embodiment, the semiconductor wafer is singulated into semiconductor chips in advance, the entire surface of the element forming surface is covered with the adhesive tape 34, and the adhesive layer 39 is formed on the entire back surface. Is described, but the melting step of the low dielectric constant insulating film is not limited to this mode, and the adhesive layer is formed on the back surface of each semiconductor chip and the adhesive layer is cut. Of course, it is applicable even when it is not necessary. Further, even when the semiconductor wafer is not yet singulated into semiconductor chips, the above-described melting step of the low dielectric constant insulating film is performed after the singulation step of the semiconductor wafer or in parallel with the singulation step. And can be applied.

FIG. 2A is a perspective view of a semiconductor wafer used in the first embodiment of the present invention, and FIG. 2B is a cross-sectional view of a portion along the line AA in the perspective view of FIG. FIG. 1 is a perspective view illustrating a schematic configuration of a semiconductor manufacturing apparatus according to a first embodiment of the present invention. 3A is a plan view of a wafer suction unit used in a peeling mechanism and a pickup mechanism of the semiconductor manufacturing apparatus shown in FIG. 2, and FIG. 3B is a cross-sectional view of a portion along line 3H-3H in FIG. FIG. 3 is a plan view illustrating a positional relationship between a wafer suction unit and a singulated semiconductor wafer of the semiconductor manufacturing apparatus illustrated in FIG. 2. FIG. 3 is a cross-sectional view illustrating an adhesive tape peeling mechanism provided in the semiconductor manufacturing apparatus shown in FIG. 2. FIG. 3 is a cross-sectional view illustrating a configuration example of an auxiliary plate included in the semiconductor manufacturing apparatus illustrated in FIG. 2 and a cross-sectional view illustrating another configuration example. FIG. 3 is a cross-sectional view illustrating a semiconductor chip pickup mechanism included in the semiconductor manufacturing apparatus shown in FIG. 2. FIG. 4 is a cross-sectional view illustrating another configuration example of the semiconductor chip pickup mechanism included in the semiconductor manufacturing apparatus illustrated in FIG. 2. FIG. 3 is a schematic perspective view illustrating a mounting step of the semiconductor chip picked up according to the first embodiment of the present invention. It is a perspective view explaining a picker concerning a 1st embodiment of the present invention. It is a perspective view explaining a flip chip bonder concerning a 1st embodiment of the present invention. It is a perspective view explaining the film bonding bonder concerning a 1st embodiment of the present invention. It is a perspective view and a sectional view explaining an inner lead bonder concerning a 1st embodiment of the present invention. (A) is a perspective view of a semiconductor wafer used in the second embodiment of the present invention, and (b) is a cross-sectional view of a portion taken along line BB of the perspective view of (a). It is a process sectional view explaining from a peeling process to a pickup process in a 2nd embodiment of the present invention. (A) is a perspective view of a semiconductor wafer used in the third embodiment of the present invention, and (b) is a cross-sectional view of a portion taken along line CC in the perspective view of (a). It is a process sectional view explaining a separation process and a pick-up process by a 3rd embodiment of the present invention. (A) is a perspective view of a semiconductor wafer used in the fourth embodiment of the present invention, and (b) is a cross-sectional view of a portion along the line DD in the perspective view of (a). It is a process sectional view explaining from a peeling process to a pick-up process by a 4th embodiment of the present invention. (A) is a perspective view of a semiconductor wafer used in the fifth embodiment of the present invention, and (b) is a cross-sectional view of a portion along a line EE in the perspective view of (a). It is a process sectional view explaining from a peeling process by a 5th embodiment of the present invention to a pick-up process. (A) is a perspective view of a semiconductor wafer used in a sixth embodiment of the present invention, and (b) is a cross-sectional view of a portion along the line FF in the perspective view of (a). It is a process sectional view explaining from a peeling process by a 6th embodiment of the present invention to a pick-up process. (A) is a perspective view of a semiconductor wafer used in the seventh embodiment of the present invention, and (b) is a cross-sectional view of a portion taken along line GG in the perspective view of (a). It is a process sectional view explaining from a peeling process to a pick-up process by a 7th embodiment of the present invention. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 26H-26H in FIG. (A) is a top view which shows another structural example different from the structural example of the wafer suction part shown in FIG. 3, (b) is sectional drawing of the part which follows 27H-27H line of (a). (A) is a top view which shows another structural example different from the structural example of the wafer suction part shown in FIG. 3, (b) is sectional drawing of the part which follows the 28H-28H line of (a). 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 29H-29H in FIG. (A) is a top view which shows another structural example different from the structural example of the wafer suction part shown in FIG. 3, (b) is sectional drawing of the part which follows 30H-30H line of (a). (A) is a top view which shows another structural example different from the structural example of the wafer adsorption part shown in FIG. 3, (b) is sectional drawing of the part which follows 31H-31H line of (a). 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 32H-32H in FIG. (A) is a top view which shows another structural example different from the structural example of the wafer suction part shown in FIG. 3, (b) is sectional drawing of the part which follows 33H-33H line of (a). FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 34H-34H in FIG. (A) is a top view which shows another structural example different from the structural example of the wafer suction part shown in FIG. 3, (b) is sectional drawing of the part which follows 35H-35H line of (a). 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 36H-36H in FIG. FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 37H-37H in FIG. (A) is a top view which shows another structural example different from the structural example of the wafer adsorption part shown in FIG. 3, (b) is sectional drawing of the part which follows 38H-38H line of (a). FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 39H-39H in FIG. (A) is a top view which shows another structural example different from the structural example of the wafer adsorption part shown in FIG. 3, (b) is sectional drawing of the part which follows 40H-40H line of (a). 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 41H-41H in FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 42H-42H in FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 43H-43H in FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion taken along line 44H-44H in FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion taken along line 45H-45H in FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 46H-46H in FIG. FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 47H-47H in FIG. FIG. 4A is a plan view illustrating another configuration example different from the configuration example of the wafer suction unit illustrated in FIG. 3, and FIG. 4B is a cross-sectional view of a portion along line 48H-48H in FIG. (A) is a perspective view of an example of a wafer ring on which a semiconductor wafer used in the present invention is mounted, and (b) is a cross-sectional view taken along a line JJ of the perspective view of (a). It is a perspective view of a semiconductor wafer used for an 8th embodiment of the present invention, and (b) is a sectional view of a portion which meets a KK line of a perspective view of (a). It is process sectional drawing explaining the peeling process of the adhesive tape by 8th Embodiment of this invention, the cutting | disconnection and fusion | melting process of an adhesive layer and a low dielectric constant insulating film, and the pickup process of a semiconductor chip. It is a schematic diagram showing a comparative example of the eighth embodiment of the present invention. It is a top view showing the comparative example of the 8th embodiment of the present invention. It is a top view showing an effect of an 8th embodiment of the present invention. FIG. 4 is an enlarged sectional view of main components of a conventional pickup device when a semiconductor chip is picked up from an adhesive tape. It is sectional drawing and a top view of a semiconductor chip explaining a crack when the thickness of a semiconductor chip is 100 micrometers or less. It is sectional drawing and a top view of a semiconductor chip explaining a crack when the thickness of a semiconductor chip is 100 micrometers or more.

Explanation of reference numerals

1, 30, 40, 50, 60, 70, 80: semiconductor chip 2: wafer suction units 2-1 to 2-7: suction areas 3, 33, 43, 53, 63, 73, 83: holding table 4: TV Camera 5: Lead frame supply unit 6: Lead frame transport device 7: Paste supply device 8: Bonding tool 9: Lead frame storage unit 10, 36, 56, 66, 76, 86: Suction collet 11: Position correction stage 12: Bonding Head 13: Lead frame 14: Conductive paste 15: Tray 16: Mounting substrate 17: Film substrate 18: TAB tape 19a, 19b: Heating tool 20: Suction device 21, 31, 41, 51, 61, 71, 81: Peeling Claw 22, 32, 42, 52, 62, 72, 82: auxiliary plates 23-1 to 23-7: connection holes 24, 34, 44, 54, 4, 74, 84: Adhesive tapes 25A, 25B: Vacuum piping 26-A to 26-G: Switching valves 27A, 27B: Vacuum pumps 28, 30: Plates 29, 39, 49, 59, 69, 79, 89: Adhesive layer 35: Wafer ring 210: Low dielectric constant insulating film (low-k film)

Claims (25)

A peeling mechanism that peels off the adhesive tape adhered on the element forming surface of the singulated semiconductor wafer composed of a plurality of semiconductor chips having an adhesive layer attached to the back surface,
The semiconductor manufacturing apparatus, wherein the peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas in a peeling direction of the adhesive tape. Equipped with a peeling mechanism for peeling off the adhesive tape adhered on the element forming surface of the semiconductor wafer that has been singulated by bonding an adhesive layer over the entire back surface,
The peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas with respect to a peeling direction of the adhesive tape, and cuts the adhesive layer. A semiconductor manufacturing apparatus having means. Equipped with a peeling mechanism that peels off the adhesive tape adhered on the element forming surface of the semiconductor wafer on which the adhesive layer is stuck on the entire back surface,
The peeling mechanism has a suction unit that sucks and fixes the semiconductor wafer with a porous material separated into at least two suction areas in a peeling direction of the adhesive tape, and cuts the semiconductor wafer into individual pieces. A semiconductor manufacturing apparatus having cutting means for singulating and cutting the adhesive layer. The semiconductor wafer has a sealing resin formed on the element formation surface, and a low dielectric constant insulating film formed in contact with the sealing resin,
The adhesive tape is adhered on the element forming surface of the semiconductor wafer via the sealing resin and the low dielectric constant insulating film,
4. The semiconductor manufacturing apparatus according to claim 1, further comprising a heating unit configured to melt and fix a part of the low dielectric constant insulating film and the sealing resin. 5.   5. The semiconductor manufacturing apparatus according to claim 4, wherein the low dielectric constant insulating film is melted by a laser which is incident on a peripheral portion of the semiconductor chip at an incident angle of 20 to 40 degrees. A peeling mechanism for peeling off the adhesive tape adhered to the element forming surface of the singulated semiconductor wafer composed of a plurality of semiconductor chips having an adhesive layer attached to the element forming surface,
The semiconductor manufacturing apparatus, wherein the peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas in a peeling direction of the adhesive tape. Equipped with a peeling mechanism for peeling the adhesive tape adhered to the element forming surface of the semiconductor wafer via an adhesive layer,
The peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas with respect to a peeling direction of the adhesive tape, and the adhesive layer and the semiconductor wafer. A semiconductor manufacturing apparatus having a cutting unit for cutting a wafer into a semiconductor chip shape. Equipped with a peeling mechanism for peeling the adhesive tape formed through the adhesive layer on the element forming surface of the singulated semiconductor wafer,
The peeling mechanism has a suction unit that suction-fixes the semiconductor wafer with a porous material separated into at least two suction areas with respect to a peeling direction of the adhesive tape, and cuts the adhesive layer. A semiconductor manufacturing apparatus having means. Equipped with a peeling mechanism to peel off the adhesive tape adhered to the element formation surface of the semiconductor wafer,
The peeling mechanism has a suction unit that sucks and fixes the semiconductor wafer with a porous material separated into at least two suction areas in a peeling direction of the adhesive tape, and cuts the semiconductor wafer into individual pieces. A semiconductor manufacturing apparatus having cutting means for singulation.   At least two systems of vacuum pipes are provided corresponding to the suction area and suction the semiconductor wafer, and the vacuum pipes are switched according to a peeling position of the adhesive tape to suction the semiconductor wafer. The semiconductor manufacturing apparatus according to claim 1, wherein:   11. The semiconductor manufacturing apparatus according to claim 10, wherein the switching of the vacuum pipe is performed in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area.   The semiconductor manufacturing apparatus according to claim 1, wherein the adhesive tape is attached to a wafer ring.   12. The semiconductor manufacturing apparatus according to claim 1, wherein the adhesive tape is equal to or larger than an outer peripheral portion of the singulated semiconductor wafer.   14. The semiconductor manufacturing apparatus according to claim 1, further comprising a suction collet for sucking and picking up individual semiconductor chips by the suction collet after the peeling of the adhesive tape is completed. It comprises a step of peeling off the adhesive tape adhered on the singulated semiconductor wafer composed of a plurality of semiconductor chips having an adhesive layer attached to the back surface,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to fix the semiconductor wafer by suction. A step of peeling the adhesive tape adhered on the semiconductor wafer, which has been singulated and the adhesive layer is stuck on the entire back surface,
Cutting the adhesive layer after separating the adhesive tape so that the adhesive layer is separated for each semiconductor chip,
The step of peeling off the adhesive tape,
Via a porous material separated into at least two suction areas with respect to the peeling direction of the adhesive tape, suction-fixing the semiconductor wafer with at least two systems of suction paths corresponding to the suction areas,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to suction-fix the semiconductor wafer, wherein the cutting of the adhesive layer is performed in parallel with the control of switching two or more vacuum pipes of the at least two suction areas in accordance with the cutting state. A method of manufacturing a semiconductor device to be performed. A step of peeling the adhesive tape adhered onto the semiconductor wafer on which the adhesive layer is stuck on the entire back surface,
And cutting the semiconductor wafer and the adhesive layer so as to separate the semiconductor chip and each semiconductor chip after peeling the adhesive tape,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to suction-fix the semiconductor wafer, wherein the cutting of the semiconductor wafer and the adhesive layer switches two or more vacuum pipes of the at least two suction areas in accordance with the cutting state. A method for manufacturing a semiconductor device, which is performed in parallel with the control. The semiconductor wafer has a sealing resin formed on the element formation surface, and a low dielectric constant insulating film formed in contact with the sealing resin,
The adhesive tape is adhered on the element forming surface of the semiconductor wafer via the sealing resin and the low dielectric constant insulating film,
18. The method according to claim 15, further comprising a heating step of melting and fixing a part of the low dielectric constant insulating film and the sealing resin. A step of peeling off the adhesive tape bonded to the element forming surface of the singulated semiconductor wafer via an adhesive layer,
Cutting the adhesive layer after separating the adhesive tape so that the adhesive layer is separated for each semiconductor chip,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to suction-fix the semiconductor wafer, wherein the cutting of the adhesive layer is performed in parallel with the control of switching two or more vacuum pipes of the at least two suction areas in accordance with the cutting state. A method of manufacturing a semiconductor device to be performed. Comprising a step of peeling off the adhesive tape adhered to the singulated semiconductor wafer composed of a plurality of semiconductor chips each having an adhesive layer attached to the element forming surface,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas via a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. A step of switching the suction path to suction-fix the semiconductor wafer,
A method for manufacturing a semiconductor device, comprising: A step of peeling off the adhesive tape adhered to the semiconductor wafer having the adhesive layer adhered to the element forming surface,
And cutting the semiconductor wafer and the adhesive layer so as to separate the semiconductor chip and each semiconductor chip after peeling the adhesive tape,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path to fix the semiconductor wafer by suction,
The method of manufacturing a semiconductor device, wherein the cutting of the semiconductor wafer and the adhesive layer is performed in parallel with a control of switching two or more vacuum pipes of the at least two suction areas according to the cutting state. A step of peeling the adhesive tape adhered to the semiconductor wafer,
Cutting the semiconductor wafer after separating the adhesive tape so as to separate each semiconductor chip,
The step of peeling off the adhesive tape,
A step of adsorbing and fixing the semiconductor wafer through at least two suction paths corresponding to the suction areas through a porous material separated into at least two suction areas with respect to a direction in which the adhesive tape is peeled off; ,
Peeling the adhesive tape along the peeling direction, and when a part of the adhesive tape corresponding to the adjacent suction area is peeled, in the vicinity where the peeling of the adhesive tape reaches the adjacent suction area. Switching the suction path and suction-fixing the semiconductor wafer. The cutting of the semiconductor wafer is performed in parallel with the control of switching two or more vacuum pipes of the at least two suction areas in accordance with the cutting state. A method of manufacturing a semiconductor device.   21. The method of manufacturing a semiconductor device according to claim 15, wherein a suction surface of the singulated semiconductor wafer in the wafer suction portion has a large number of through holes.   The method further comprises a step of interposing plates having suction holes respectively corresponding to the singulated semiconductor wafers between the suction surface of the wafer suction unit and the singulated semiconductor wafer. A method for manufacturing a semiconductor device according to claim 15.   25. The method of manufacturing a semiconductor device according to claim 15, further comprising a step of picking up individual semiconductor chips by suction using a suction collet after the peeling of the adhesive tape is completed.