JP2004363295A - Semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a high heat dissipation efficiency and is highly reliable. <P>SOLUTION: The semiconductor device 10 has an outer electrode 34, a semiconductor element 28 having a plurality of strip electrodes 37 arranged in parallel at every a prescribed distance, and a conductor 32 electrically connecting the strip electrodes 37 of the semiconductor element 28 to the outer electrode 34. The conductor 32 has a plate conductor body 38 and a plurality of projecting stripe contacts 44 which are projected from one main surface 40 of the conductor body 38 and arranged in parallel at the same distance as that of the strip electrodes 37. The semiconductor element 28 is connected to the outer electrode 34 via the conductor 32 by making projecting stripe contacts 44 come in contact with the strip electrodes 37. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a structure of a semiconductor device having a semiconductor element.
[0002]
[Prior art]
In a conventional semiconductor device, an electrical connection between an electrode on the surface of a semiconductor element and an electrode outside the element is mainly performed by a thin metal wire such as an aluminum wire (for example, Patent Document 1).
[0003]
[Patent Document 1]
JP 2001-332678 A
[Problems to be solved by the invention]
However, such a semiconductor device has a problem in that the contact area between the thin metal wire and the semiconductor element is small, the current is concentrated on the contact portion, the temperature becomes high, and the contact portion is finally thermally destroyed.
[0005]
[Means for Solving the Problems]
The present invention has been made in order to solve the problem, an external electrode, a semiconductor element having a plurality of strip electrodes arranged in parallel at a predetermined interval, a strip electrode and an external electrode of the semiconductor element. And a conductor that electrically connects the
The conductor, the plate-shaped conductor body, and a plurality of ridge contact portions protruding from one main surface of the plate-shaped conductor body and arranged in parallel at the same interval as the plurality of strip electrodes. With
The semiconductor element and the external electrode are electrically connected via the conductor by bringing the plurality of ridge contact portions into contact with the plurality of strip electrodes.
[0006]
BEST MODE FOR CARRYING OUT THE INVENTION
Embodiment 1 FIG.
1 to 4 show a first embodiment of a semiconductor device according to the present invention. FIG. 1 is a plan view of the semiconductor device of the present invention, and FIG. 2 is a cross-sectional view of the semiconductor device shown in FIG. 3 and 4 are for showing the features of the present invention in detail. FIG. 3 is a sectional view taken along line BB of FIG. 1, and FIG. 4 is an enlarged plan view of the semiconductor element.
[0007]
Referring to FIG. 1 and FIG. 2, the semiconductor device 10 includes an insulating housing 12 formed of a rectangular hollow frame. Inside the housing 12, a semiconductor element section 14 including a plurality of semiconductor elements is accommodated. The semiconductor element section 14 has a heat radiating plate 16 fixed to a lower opening of the rectangular housing 12. The heat radiating plate 16 supports a substrate 18 located inside the housing 12. The substrate 18 includes an insulating plate 20 and conductive portions 22 and 24 provided on the upper and lower surfaces of the insulating plate 20, respectively. The conductive portion 24 on the lower surface is bonded to the heat radiating plate 16 via a brazing material 26. I have. On the other hand, the conductive part 22 on the upper surface supports a plurality of semiconductor elements 28, and these conductive parts 22 and the plurality of semiconductor elements 28 are bonded via a brazing material 30. The plurality of semiconductor elements 28 are electrically connected to the first external electrodes 34 provided on the housing 12 via the plate-shaped conductor 32.
[0008]
As shown in FIG. 4, each semiconductor element 28 includes a plurality of semiconductor cells 36 arranged in parallel at a predetermined interval (pitch), and a strip electrode formed on the surface of each semiconductor cell 36. Alternatively, the strip-shaped contact portions 37 are individually electrically connected to the plate-shaped conductor 32. On the other hand, the plate-shaped conductor 32 includes a plate-shaped main body 38 made of a conductive material. The plate-shaped main body 38 has a pair of opposing main surfaces (a lower surface 40 and an upper surface 42), and a plurality of main bodies 38 are arranged in parallel at one end of the lower surface 40 at the same interval (pitch) as the semiconductor cell 36. Are integrally provided. Then, the plate-shaped conductor 32 is bridged between the housing 12 and the semiconductor element portion 14 such that each of the ridge connection portions 44 faces the corresponding semiconductor cell 36, and is connected to the ridge connection portion 44 on one end side. The semiconductor cell 36 is electrically connected to the semiconductor cell 36 via the brazing material 46, and the other end and the first external electrode 34 are similarly electrically connected and fixed. Further, the semiconductor element 28 is connected to a second external electrode 50 provided on the housing 12 via a thin metal wire 48.
[0009]
According to the semiconductor device 10 configured as described above, referring to FIG. 2, a part of the heat generated in the semiconductor element 28 is transmitted through the brazing material 30, the substrate 18, the brazing material 26, and the heat radiating plate 16. Released into the atmosphere. This is the same in a conventional semiconductor device. Further, in the semiconductor device 10 of the present invention, part of the heat generated in the semiconductor element 28 is released to the atmosphere via the brazing material 46 from the ridge connection portion 44 of the plate-shaped conductor 32 through the plate-shaped main body 38. You. Therefore, heat generated in the semiconductor element 28 is efficiently released to the atmosphere. In addition, the amount of heat accumulated in each component is reduced, so that the thermal expansion of each component is suppressed, and as a result, the destruction of the bonding portion connecting the components is prevented.
[0010]
Further, the electrical connection between the semiconductor element 28 and the plate-shaped conductor 32 is made through the entire surface of the band-shaped contact portion 37 of the semiconductor cell 36 as shown in FIG. Therefore, the electric resistance between the semiconductor element 28 and the plate-shaped conductor 32 is lower than that of, for example, the solder bonding portion between the thin metal wire (conductor) and the semiconductor element, and therefore, the flow of current concentrates on the connection part. Is prevented. This prevents the electrical connection between the semiconductor element 28 and the plate-shaped conductor 32 from being destroyed by heat resulting from power concentration.
[0011]
Embodiment 2 FIG.
FIG. 5 shows a semiconductor device 110 according to a second embodiment of the present invention. A feature of the semiconductor device 110 according to the second embodiment is that one end of the plate-shaped conductor 132 is used as an external electrode 134. Other configurations and operations thereof are the same as those of the first embodiment. Thus, the number of external electrodes provided on the housing 112 can be reduced, and labor for connecting the plate-shaped conductor 132 and the external electrodes can be omitted. Further, heat generated in the semiconductor element 128 is efficiently released to the atmosphere via the plate-shaped conductor 132.
[0012]
Embodiment 3 FIG.
FIG. 6 shows a semiconductor device 210 according to a third embodiment of the present invention. The difference between the semiconductor device of the third embodiment and the other embodiments is that the plate-shaped conductor 232 and the semiconductor element 228 are contacted and connected without the intermediary of a brazing material. Further, in order to maintain contact, a leaf spring 252 supported by the housing 212 is disposed on the leaf conductor 232, and the leaf spring 252 presses the leaf conductor 232 toward the semiconductor element 228. I have. As described above, in the present embodiment, since no brazing material is used for connecting the semiconductor element and the conductor, the destruction of the brazing material is naturally eliminated, thereby improving the reliability and life of the entire device. Further, part of the heat generated in the semiconductor element 228 is released to the atmosphere through the leaf spring 252, so that the heat radiation efficiency of the entire device is improved.
[0013]
Embodiment 4 FIG.
FIG. 7 shows a semiconductor device 310 according to a fourth embodiment of the present invention. In the fourth embodiment, a radiation fin 354 is attached to an upper surface 342 of a plate-shaped conductor 332 of the semiconductor device according to the first embodiment. Therefore, according to the semiconductor device 310 of this embodiment, the heat generated in the semiconductor element 328 is efficiently released from the plate-shaped conductor 332 to the atmosphere via the radiation fins 354. Naturally, in order to increase the heat radiation efficiency, the heat radiation fins 354 are preferably formed of a material having good thermal conductivity. It is preferable to provide an insulating material 356 between the insulating material 354 and the insulating material 354. Naturally, the radiation fins can be provided in the other embodiments described above.
[0014]
In addition, it is clear that the conductor of the present invention can be used for other purposes because it has conductivity and heat dissipation. It is clear that the conductor can be changed variously for that purpose. Although the description of the material of the conductor is not given in this specification, it is recognized that the heat dissipation can be further improved by forming the conductor from an appropriate material. For example, by selecting a material having a mechanical or physical property (for example, thermal conductivity or coefficient of linear expansion) similar to that of a semiconductor element as a heat source, heat transfer between the conductor and the semiconductor element can be achieved. Can be performed smoothly.
[0015]
【The invention's effect】
The heat dissipation efficiency is improved by the semiconductor device of the present invention. As a result, breakage due to heat does not occur, and the reliability of the entire device is improved.
[Brief description of the drawings]
FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present invention.
FIG. 2 is a sectional view taken along the line AA in FIG.
FIG. 3 is a sectional view taken along line BB in FIG.
FIG. 4 is a plan view of a semiconductor element in the semiconductor device according to the present invention.
FIG. 5 is a cross-sectional view of a semiconductor device according to a second embodiment of the present invention viewed from the same viewpoint as FIG.
FIG. 6 is a cross-sectional view of a semiconductor device according to a third embodiment of the present invention as viewed from the same viewpoint as FIG. 2;
FIG. 7 is a cross-sectional view of a semiconductor device according to a fourth embodiment of the present invention viewed from the same viewpoint as FIG.
[Explanation of symbols]
Reference Signs List 10 semiconductor device, 12 housing, 14 semiconductor element portion, 16 heat sink, 18 substrate, 20 insulating plate, 22 upper surface conductive portion, 24 lower surface conductive portion, 26 brazing material, 28 semiconductor element, 30 brazing material, 32 plate-shaped conductor , 34 first external electrode, 36 semiconductor cell, 37 band-shaped contact portion, 38 plate-shaped main body, 40 lower surface (main surface), 42 upper surface (main surface), 44 ridge connection portion, 46 brazing material, 48 metal wire, 50 second external electrode, 110 semiconductor device, 112 housing, 128 semiconductor element, 132 plate conductor, 134 external electrode, 210 semiconductor device, 212 housing, 228 semiconductor element, 232 plate conductor, 252 leaf spring, 310 Semiconductor device, 328 semiconductor element, 332 plate-shaped conductor, 342 upper surface, 354 radiating fin, 356 insulating material.

Claims (5)

In a semiconductor device including an external electrode, a semiconductor element having a plurality of strip-shaped electrodes arranged in parallel at a predetermined interval, and a conductor electrically connecting the strip-shaped electrode of the semiconductor element and the external electrode. ,
The conductor, the plate-shaped conductor body, and a plurality of ridge contact portions protruding from one main surface of the plate-shaped conductor body and arranged in parallel at the same interval as the plurality of strip electrodes. With
A semiconductor device, wherein the semiconductor element and the external electrode are electrically connected via the conductor by bringing the plurality of ridge contact portions into contact with the plurality of strip electrodes. The semiconductor device includes a plurality of semiconductor elements,
2. The semiconductor device according to claim 1, wherein the conductor includes a plurality of ridge contact portions corresponding to a plurality of strip electrodes of each semiconductor element. The semiconductor device includes a housing that houses the semiconductor element,
3. The semiconductor device according to claim 1, wherein the conductor is drawn out of the housing. The semiconductor device according to claim 1, wherein a heat radiation protrusion is formed on the other main surface of the conductor. The semiconductor device is
5. The semiconductor device according to claim 1, further comprising an urging portion that urges the plurality of ridge contact portions to the plurality of strip electrodes. 6.

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